WO2020004290A1 - Solar cell and method for manufacturing solar cell - Google Patents

Solar cell and method for manufacturing solar cell Download PDF

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Publication number
WO2020004290A1
WO2020004290A1 PCT/JP2019/024850 JP2019024850W WO2020004290A1 WO 2020004290 A1 WO2020004290 A1 WO 2020004290A1 JP 2019024850 W JP2019024850 W JP 2019024850W WO 2020004290 A1 WO2020004290 A1 WO 2020004290A1
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WIPO (PCT)
Prior art keywords
hole
substrate
solder
aluminum electrode
soldering
Prior art date
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PCT/JP2019/024850
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French (fr)
Japanese (ja)
Inventor
傑也 新井
ミエ子 菅原
小林　賢一
秀利 小宮
正五 松井
潤 錦織
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アートビーム有限会社
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Publication date
Application filed by アートビーム有限会社 filed Critical アートビーム有限会社
Priority to JP2020527491A priority Critical patent/JPWO2020004290A1/en
Priority to CN201980042980.2A priority patent/CN112352320A/en
Priority to KR1020217002095A priority patent/KR20210022108A/en
Publication of WO2020004290A1 publication Critical patent/WO2020004290A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H01L23/4924—Bases or plates or solder therefor characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention is directed to forming an area for generating a high electron concentration when light is irradiated on a substrate, forming an insulating film that transmits light on the area, and taking out electrons from the area on the insulating film.
  • a finger electrode is formed to extract electrons to the outside through the finger electrode, and a lead wire is soldered to a hole formed in the aluminum electrode on the back surface of the substrate, and 0 mm is applied from the edge of the hole to the upper side of the aluminum electrode.
  • the present invention relates to a solar cell and a method of manufacturing a solar cell, which protrude by more than 0.1 mm and solder to increase conversion efficiency and improve fixing strength of a lead wire on a back surface.
  • a nitride film 32 is formed on the surface (upper surface) of a silicon substrate 31, and a paste (containing lead glass) of a finger electrode (silver) 33 is screen-printed and sintered thereon.
  • a finger electrode 33 for extracting electrons from the high electron concentration region to the outside by forming a hole in the nitride film 32 is formed.
  • a bus bar electrode (silver) 34 is screen-printed and sintered in a direction orthogonal to the finger electrode 33 to generate the electrode.
  • a ribbon (lead wire) 35 was soldered on the bus bar electrode (silver) 34 with solder 36 to firmly fix the ribbon 35 to the silicon substrate 31.
  • an aluminum electrode 37 was formed on the back surface (lower surface) of the silicon substrate 31, and a ribbon 39 was soldered and fixed on the aluminum electrode 37.
  • the aluminum electrode 37 is formed on the entire surface and the soldering strength of the ribbon 39 is low, a hole is formed in a part of the aluminum electrode 37 (a hole is formed on the surface corresponding to the bus bar electrode 34).
  • the silver paste is screen-printed and sintered to form a silver portion 371, and the ribbon 39 is fixed to the silver portion 371 with the solder 38 to obtain a necessary fixing strength.
  • the present inventors soldered directly to the aluminum electrode hole on the back surface of the substrate, and slightly protruded from the edge of the hole onto the aluminum electrode, and soldered the ribbon to the substrate with sufficient fixing strength.
  • the structure and method of obtaining a fixed and high conversion efficiency were found by experiments.
  • the present invention forms a region that generates a high electron concentration when light is irradiated onto a substrate, forms an insulating film that transmits light over the region, and extracts electrons from the region over the insulating film.
  • An aluminum electrode is formed on the entire back surface of a substrate in a solar cell in which a finger electrode is formed as an outlet and electrons are taken out through the finger electrode and electrons are introduced from the back surface of the substrate to form a circuit.
  • a hole is formed in a part of the electrode, or an aluminum electrode with a hole is formed in a part of the entire back surface of the board, soldered to the board inside the hole, and the aluminum electrode from the edge of the hole together 0.1 mm or more is soldered to the upper side of the board, and electrons are allowed to flow from the part of the board inside the soldered hole and the part of the aluminum electrode protruding more than 0.1 mm from the edge of the hole, respectively, It was realized a solar cell to increase the conversion efficiency of the cell.
  • the portion where the hole of the aluminum electrode is formed is a portion corresponding to the outgoing line on the surface.
  • soldering is performed by soldering only solder, or solder and a lead wire, or a pre-soldered lead wire.
  • soldering is performed in a state where the temperature of the portion to be soldered is lower than the temperature at which the solder melts and preheated to room temperature or higher.
  • the solder contains at least one of zinc, aluminum, and silicon in tin.
  • the solder does not contain Pb, Ag, and Cu.
  • soldering is performed by protruding 0.1 mm or more from the edge of the hole to the upper side of the aluminum electrode, and protruding 0.1 mm to 3.0 mm or less from the upper side of the aluminum electrode.
  • the present invention solders directly to the aluminum electrode hole on the back surface of the substrate and slightly protrudes from the edge of the hole onto the aluminum electrode, and solders the extraction wire with sufficient fixing strength.
  • a configuration and a method for fixing to a substrate and obtaining high conversion efficiency have been realized.
  • the aluminum electrode protruding from the edge of the hole of the substrate by 0.1 mm or more is soldered, and electrons are supplied to the substrate from the protruded and soldered aluminum electrode and the aluminum electrode connected thereto, and the Experiments confirmed that the conversion efficiency was improved (see FIGS. 4 and 5).
  • FIG. 1 shows a configuration diagram of an embodiment of the present invention.
  • FIG. 1 shows a side view of the whole
  • (b) of FIG. 1 shows an enlarged view of a main part of (a) of FIG.
  • a substrate (silicon substrate) 1 is a silicon substrate (single crystal or polycrystal) on which a solar cell is to be formed.
  • the back surface (Al) 2 of the substrate is the back surface of the substrate 1. After forming an aluminum electrode on the entire back surface, a hole is partially formed or an aluminum electrode having a hole is formed on the entire back surface of the substrate 1. Or something.
  • the substrate heating heater 3 is a heating element for preheating the substrate 1 and, when soldering to the substrate 1, is heated to a temperature lower than a temperature at which the solder melts and to a temperature higher than a room temperature, and has an automatic temperature adjusting mechanism. Things.
  • the ABS solder 11 is a long solder material having a shape convenient for supplying solder such as a thread or a ribbon to be soldered to the back surface (aluminum electrode) 2 of the substrate.
  • the solder material is made of a material containing at least one of zinc (Zn), aluminum (Al), and silicon (Si) in tin (Sn) and not containing lead (Pb), silver (Ag), and copper (Cu). Alloy (referred to as ABS solder 11).
  • the melting point of the ABS solder 11 which depends on these solder materials is usually in the range of about 150 ° C. to 350 ° C. and is determined by the compounding ratio of the material.
  • a preheating temperature (a temperature not lower than room temperature at which the ABS solder 11 does not melt) is determined, and the soldering tip 22 is heated and melted when an ultrasonic wave is applied.
  • the appropriate temperature for soldering on top is determined experimentally. As a result, ultrasonic soldering as shown in the photos of FIGS. 9A, 9B, and 9C described later becomes possible, the tensile strength when the ribbon 22 is soldered is high, and the conversion of the solar cell is performed. The efficiency could be further increased.
  • the composition of the solder material of the ABS solder 11 is such that tin (Sn) is 20 to 95 wt%, zinc (Zn) is 3 to 60 wt%, and additives such as aluminum (Al) and silicon (Si) are added in appropriate amounts. These mixing ratios are determined optimally by experiments depending on the melting temperature and the target of ABS soldering such as a substrate or a ribbon.
  • the ABS solder material supply mechanism 12 is a mechanism for supplying the ABS solder 11 to the iron tip 12 at a predetermined speed (a predetermined amount of solder, which will be described later) in accordance with the moving speed of the iron tip 22 with respect to the substrate 1.
  • the ribbon 13 is soldered to a portion of the substrate 1 where holes are formed in the back surface (aluminum electrode) 2 or to a pre-soldered portion to take out current from the substrate 1 to the outside.
  • the ABS solder 11 is supplied as shown in FIG. 1A
  • preliminary soldering (ultrasonic soldering) is performed on the substrate 1 in the hole portion on the back surface 2 of the substrate, as shown in FIG. 1B.
  • the ribbon 13 is supplied while being superposed on the ABS solder 11, the ribbon 13 is soldered (ultrasonic soldering) to the substrate 1 in the hole portion on the back surface 2 of the substrate.
  • the ribbon is normally soldered (soldering without ultrasonic waves) to the pre-soldered portion in a later step.
  • a ribbon with solder in which the ABS solder 11 is soldered to the ribbon 13 in advance may be used.
  • the soldered ribbon needs to be soldered sufficiently to the ribbon 13 in advance so that the solder of about 0.1 mm or more protrudes from the edge of the hole onto the back surface (aluminum electrode) 2 of the substrate. is there.
  • the soldering iron 21 heats the iron tip 22 to a predetermined temperature and supplies ultrasonic waves.
  • the soldering iron tip 22 is attached to the tip of the soldering iron 21, applies ultrasonic waves to a portion to be soldered (a hole portion on the back surface 2 of the substrate, etc.), and supplies the melted ABS solder 11. It is to be soldered.
  • the soldering iron heating power supply 23 supplies power so that the ironing tip 22 has a predetermined temperature, and has an automatic temperature adjustment mechanism by detecting the temperature of the ironing tip 22 portion.
  • the soldering iron ultrasonic power generation mechanism 24 supplies an ultrasonic wave from the ironing tip 22 to a portion to be soldered (a hole or the like on the back surface 2 of the substrate).
  • the ultrasonic power may be about 1 to 10 W. If it is too weak, the ultrasonic soldering becomes defective. If it is too strong, the film (such as an aluminum electrode film) is destroyed by the ultrasonic wave, or conversely, the soldering is performed. Since it may be defective, the optimum power is determined by experiments. Usually, it is performed at 1 to several watts.
  • the moving mechanism 25 is a mechanism for automatically moving the soldering iron 21 at a predetermined speed, here, moving the soldering iron 21 rightward at a predetermined speed.
  • the predetermined speed is interlocked with the ABS solder material supply mechanism 12 that automatically supplies the ABS solder 11, and the ABS solder 11 is about 0.1 mm or more from the edge of the hole of the substrate back surface 2, and usually has an aluminum thickness of less than 3 mm.
  • the adjustment is performed so that the ABS solder 11 is soldered to the extent that it protrudes above the electrodes (adjusted by experiment, see FIG. 4 and its description).
  • the substrate (a rectangular substrate of about 150 mm) 1 is placed on a stand (not shown) having the preliminary heater 3 and adjusted to a temperature slightly lower than the melting of the ABS solder 11 (experimentally adjusting the temperature). Decide).
  • the soldering iron heating power supply 23 supplies power to heat the ironing tip 22 to a predetermined temperature, and the soldering iron ultrasonic power generation mechanism 24 generates ultrasonic waves to supply ultrasonic waves to the ironing tip 22 ( Since the heating temperature and the ultrasonic power vary depending on the material of the ABS solder 11, it is determined by experiment for each material).
  • the ultrasonic wave is supplied to the substrate 1 in the hole portion of the substrate back surface (aluminum electrode) 2 while melting the ABS solder 11 with the iron tip 22 (lightly pressed).
  • the moving mechanism 25 moves the iron tip 22 rightward in the drawing.
  • the ABS solder material supply mechanism 12 supplies the ABS solder 11 at a predetermined speed, and the melted ABS solder 11 protrudes from the edge of the hole on the substrate back surface 2 onto the substrate back surface (aluminum electrode) 2 by about 0.1 mm or more.
  • the moving speed of the iron tip 22 and the supply amount of the ABS solder 11 are experimentally determined so as to satisfy these relationships.
  • the heating temperature and the ultrasonic power are also adjusted. Do).
  • ABS solder 11 is soldered by protruding from the edge of the hole of the substrate 1 at the hole portion of the substrate back surface (aluminum electrode) 2 to the substrate back surface (aluminum electrode) 2 by about 0.1 mm to 3 mm.
  • the preliminary soldering of the ABS solder 11 or the soldering of the ribbon 13 with the ABS solder 11 is directly performed on the substrate 1 in the portion of the hole of the substrate back surface (aluminum electrode) 2 as described later.
  • the efficiency of the solar cell can be improved, and the ribbon can be firmly fixed to the substrate 1 by being directly soldered to the substrate 1 through the hole of the rear substrate 2 with the ABS solder 11. Become.
  • the substrate heating temperature (preliminary heating) was set at 180 ° C as standard, and at least the upper limit temperature was 200 ° C or less (below the temperature at which the ABS solder does not melt). Anything above this board was damaged.
  • the soldering iron temperature in this case is 400 ° C. It is about 500 °C at most. This is adjusted by the moving speed of the iron tip and the supply speed of the solder material. The higher the speed, the higher the temperature.
  • the ultrasonic output is less than 6 watts for the back side and less than 3 watts for the front side.
  • the above conditions are for a solder material with a melting point of about 217 ° C, which is mainly made of an alloy of tin and zinc.
  • FIG. 2 shows a flowchart (overall) for explaining the operation of the present invention.
  • S1 prepares a Si substrate.
  • step S2 a surface treatment is performed.
  • a nitride film is formed on the silicon substrate (for example, N-type) prepared in S1, and patterns such as finger electrodes and bus bar electrodes are formed.
  • a nitride film 32 is formed on the front side of a silicon substrate 31 and patterns such as a finger electrode 33 and a bus bar electrode 34 are formed in the same manner as in the conventional FIG.
  • step S3 a back surface process is performed.
  • an aluminum pattern is formed on the back surface of a silicon substrate, for example, an aluminum electrode having holes on the entire back surface of the silicon substrate is screen-printed with an aluminum paste. Then, the present invention proceeds to S5.
  • S5 is sintered.
  • the patterns formed by the surface treatment in S2 and the back surface treatment in S3 are sintered together.
  • finger electrodes, bus bar electrodes, and aluminum electrodes with holes on the back side were formed on the front side of the substrate in S1 to S3, S5.
  • step S6 measurement (1) is performed. This measures the electrical characteristics of the solar cell before ABS soldering using a probe before ABS soldering in S7 (see data before soldering in FIG. 5).
  • step S7 ABS soldering is performed.
  • the ABS solder is directly soldered to the portion of the Si substrate where the aluminum electrode has a hole, and the solder is protruded from the edge of the hole onto the aluminum electrode by about 0.1 mm or more.
  • the ribbons 13 may be soldered together (see FIG. 1B).
  • measurement (2) is performed. This measures the electrical characteristics of the solar cell after the ABS soldering in S7 (see data after soldering in FIG. 5).
  • a nitride film is formed on the surface of the Si substrate, patterns such as finger electrodes and bus bar electrodes are formed, and a pattern of an aluminum electrode having a hole on the back surface of the Si substrate is formed, and then sintered together.
  • a pattern can be formed.
  • a silver paste is further applied on the Si substrate.
  • a silver paste is screen-printed on a portion of the aluminum electrode having a hole formed by the back surface treatment in S3 to form a silver pattern on the Si substrate inside the hole of the aluminum electrode.
  • a nitride film is formed on the surface of the Si substrate, patterns such as finger electrodes and bus bar electrodes are formed, and a pattern of an aluminum electrode having a hole on the back surface of the Si substrate is formed.
  • FIG. 3 is a flowchart illustrating the detailed operation of the present invention. This is a detailed flowchart of the ABS soldering in S7 of FIG.
  • S11 preheats the substrate.
  • the substrate 1 is preheated by the substrate heater 3 with the substrate 1 of FIG. 1 placed on a stand (not shown), and heated to a temperature slightly lower than the temperature at which the ABS solder 11 melts.
  • step S12 the iron tip is heated and ultrasonic waves are applied. This is because power is supplied from the soldering iron heating power supply 23 of FIG. 1 to the soldering iron 21 to heat the ironing tip 22 to a predetermined temperature, and the soldering iron ultrasonic power generation mechanism 24 generates ultrasonic waves of a predetermined output. It is supplied to the iron tip 22.
  • Step S13 supplies ABS solder. This is because the ABS solder material supply mechanism 12 in FIG. 1 supplies the thread or ribbon-shaped ABS solder 11 at a predetermined speed between the iron tip 21 and a portion to be soldered. The supply amount of the ABS solder 11 is supplied so as to protrude by about 0.1 mm or more from the edge of the hole of the substrate back surface 2 and the edge of the hole onto the substrate back surface (aluminum electrode) 2 (see FIG. The supply amount is decided). When the ribbon 13 is to be soldered as shown in FIG. 1B, the ribbon 13 may be supplied over the ABS solder 11.
  • $ S14 moves the iron tip. This moves the iron tip 22 of FIG. 1 by the moving mechanism 25, and moves to the right in FIG.
  • the iron tip 22 is moved and ultrasonically soldered so that the ABS solder 11 protrudes from the edge of the hole on the substrate back surface 2 by approximately 0.1 mm or more from the edge of the hole on the substrate rear surface 2. It becomes possible.
  • FIG. 4 shows a sample photograph example of the present invention.
  • FIG. 4A shows a sample photograph having a contact width of about 0.1 mm
  • FIG. 4B shows a sample photograph having a contact width of about 0.5 mm
  • FIG. A sample photograph of 0 mm is shown.
  • the ABS solder 11 is so arranged that the horizontal strip in each photograph covers just above the strip-shaped hole of the back substrate 2 (protruding amount: about 0.1 mm, 0.5 mm, 1.0 mm).
  • protruding amount about 0.1 mm, 0.5 mm, 1.0 mm.
  • FIG. 4 are schematic side views of (a), (b), and (c) of FIG. 4, respectively.
  • the contact width is the amount of protrusion from the edge of the hole onto the substrate back surface (Al) 2, and shows examples of about 0.1 mm, 0.5 mm, and 1.0 mm.
  • a band-shaped hole is provided in the back substrate (aluminum electrode) 2 formed on the substrate (Si) 1, and the ABS solder 11 is ultrasonically soldered to the band-shaped hole (see FIG. a)), or by superimposing the ribbon 13 on the ABS solder 11 and performing ultrasonic soldering (see FIG. 1B), and adjusting the supply amount of the ABS solder 11 or the movement amount of the iron tip 22.
  • Ultrasonic soldering is performed so as to protrude from the edge of the hole on the back substrate (aluminum electrode) 2 by about 0.1 mm, 0.5 mm, and 1.0 mm.
  • FIG. 5 shows a measurement example of the present invention. This is a measurement example of the electric characteristics of the solar cell before (before soldering) and after (after soldering) the ABS soldering of FIGS. 4A, 4B, and 4C described above. Show. Each measurement example shows an average value of ten measurement examples. The measurement was performed at the center of a band-shaped hole on the back surface (aluminum electrode) 2 of the substrate in FIG. 4 (before soldering, the portion of the substrate 1 at the center of the hole, and after soldering, at the center of the soldered hole. The contact terminal was brought into contact with the contact portion to measure the electrical characteristics.
  • one, two, and three times of the measurement examples correspond to (a) contact width of about 0.1 mm, (b) contact width of about 0.5 mm, and (c) contact width of about 1.0 mm in FIG.
  • Isc indicates the short-circuit current of the solar cell
  • Voc indicates the open-circuit voltage of the solar cell
  • EFF indicates the maximum efficiency of the solar cell
  • FF indicates the maximum efficiency of the solar cell / (VocxIsc).
  • Before soldering indicates a value before soldering the ABS solder
  • "After soldering” indicates a value after soldering the ABS solder
  • “Change amount” indicates a change amount from before soldering to after soldering.
  • the maximum efficiency (EFF) is ⁇
  • the change amount is -0.40 for "one time” (contact width: about 0.1 mm).
  • "2 times” contact width about 0.5 mm
  • has a change of -0.18 "3 times” contact width about 1.0mm
  • the amount of change in the maximum efficiency from “before soldering” to “after soldering” decreases, that is, the ABS solder 11 is moved from the edge of the hole of the aluminum electrode (back surface of the substrate) 2 to the aluminum electrode 2. It was found for the first time in the present experiment that the change in the maximum efficiency from "before soldering” to “after soldering” became smaller as the protrusion amount increased to about 0.1 mm, 0.5 mm, and 1.0 mm.
  • the ABS solder 11 protrudes from the edge of the hole of the aluminum electrode (substrate back surface) 2 by increasing the amount of protrusion from the edge of the hole to the aluminum electrode 2 to about 0.1 mm, 0.5 mm, and 1.0 mm.
  • a path in which electrons are emitted from the portion of the ABS solder 11 (0.1 mm, 0.5 mm, 1.0 mm) to the substrate 1 through the aluminum electrode is added (increased), and the maximum efficiency is improved by that amount. It is.
  • FIG. 1 is a configuration diagram of one embodiment of the present invention.
  • 5 is a flowchart (overall) illustrating the operation of the present invention.
  • 4 is a detailed operation explanatory flowchart of the present invention. It is a sample photograph example of the present invention. It is a measurement example of the present invention. It is explanatory drawing of a prior art.

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Abstract

[Purpose] The present invention pertains to a solar battery and a method for manufacturing a solar battery, the purpose of the invention being: to directly solder a portion of a hole in an aluminum electrode (2) of the rear surface of a substrate (1), and perform soldering extending 0.1 mm or more above the aluminum electrode (2); to increase the conversion efficiency; and to obtain sufficient fixing strength. [Configuration] Either a hole is formed on a portion of the aluminum electrode (2) after the electrode has been formed on the entire surface of the rear surface of the substrate (1), or the aluminum electrode (2) is formed having a hole formed in one portion of the entire surface of the rear surface of the substrate (1). The substrate (1) in the interior of the hole is soldered, and soldering is also performed extending at least 0.1 mm on the upper side of the aluminum electrode (2) from the edge of the hole. Electrons are individually caused to flow from the part of the substrate (1) in the interior of the soldered hole and the part of the aluminum electrode (2) protruding 0.1 mm or more from the edge of the hole so as to increase the conversion efficiency of the solar battery.

Description

太陽電池および太陽電池の製造方法Solar cell and method for manufacturing solar cell
　本発明は、基板上に光を照射したときに高電子濃度を生成する領域を形成すると共に領域の上に光を透過する絶縁膜を形成し、絶縁膜の上に領域から電子を取り出す取出口であるフィンガー電極を形成してフィンガー電極を介して電子を外部に取り出すと共に、基板の裏面のアルミ電極に形成した穴の部分にリード線を半田付けすると共に穴の縁からアルミ電極の上側に０．１ｍｍ以上はみだして半田付けし、変換効率を増大させると共に裏面のリード線の固定強度を向上させる太陽電池および太陽電池の製造棒法に関するものである。 The present invention is directed to forming an area for generating a high electron concentration when light is irradiated on a substrate, forming an insulating film that transmits light on the area, and taking out electrons from the area on the insulating film. A finger electrode is formed to extract electrons to the outside through the finger electrode, and a lead wire is soldered to a hole formed in the aluminum electrode on the back surface of the substrate, and 0 mm is applied from the edge of the hole to the upper side of the aluminum electrode. The present invention relates to a solar cell and a method of manufacturing a solar cell, which protrude by more than 0.1 mm and solder to increase conversion efficiency and improve fixing strength of a lead wire on a back surface.
　従来、太陽電池セルの設計では、太陽電池セル内に生成した電子を効率よく接続された外部回路に流すということが肝要である。これを達成するためにセルから外部に連なる部分の抵抗成分を小さくすることと、生成した電子が消失しないようにすることと、表面および裏面の外部端子が強く固定されることとが特に重要である。 Conventionally, in the design of a solar cell, it is essential that electrons generated in the solar cell flow to an external circuit that is connected efficiently. In order to achieve this, it is particularly important to reduce the resistance component of the part connected from the cell to the outside, to prevent the generated electrons from disappearing, and to firmly fix the external terminals on the front and back surfaces. is there.
　例えば図６の従来技術に示すように、シリコン基板３１の表面（上面）に窒化膜３２を生成し、この上にフィンガー電極（銀）３３のペースト（鉛ガラス入り）をスクリーン印刷し焼結し、図示のように窒化膜３２に穴を開けて高電子濃度領域から電子を外部に取り出すフィンガー電極３３を形成する。次に、フィンガー電極３３と直交する方向にバスバー電極（銀）３４をスクリーン印刷し焼結して生成する。このバスバー電極（銀）３４の上に半田３６でリボン（リード線）３５を半田付けして強固にシリコン基板３１に該リボン３５を固定していた。 For example, as shown in the prior art of FIG. 6, a nitride film 32 is formed on the surface (upper surface) of a silicon substrate 31, and a paste (containing lead glass) of a finger electrode (silver) 33 is screen-printed and sintered thereon. Then, as shown in the figure, a finger electrode 33 for extracting electrons from the high electron concentration region to the outside by forming a hole in the nitride film 32 is formed. Next, a bus bar electrode (silver) 34 is screen-printed and sintered in a direction orthogonal to the finger electrode 33 to generate the electrode. A ribbon (lead wire) 35 was soldered on the bus bar electrode (silver) 34 with solder 36 to firmly fix the ribbon 35 to the silicon substrate 31.
　また、シリコン基板３１の裏面（下面）にアルミ電極３７を形成してこれにリボン３９を半田付けして固定していた。 ア ル ミ Also, an aluminum electrode 37 was formed on the back surface (lower surface) of the silicon substrate 31, and a ribbon 39 was soldered and fixed on the aluminum electrode 37.
　また、アルミ電極３７を全面に形成していたのではリボン３９の半田付け強度が弱い場合には、このアルミ電極３７の一部に穴（表面のバスバー電極３４に対応する部分に穴）を開けておき、ここに銀ペーストをスクリーン印刷して焼結して銀の部分３７１を形成し、これに半田３８でリボン３９を固定して必要な固定強度を得ていた。 If the aluminum electrode 37 is formed on the entire surface and the soldering strength of the ribbon 39 is low, a hole is formed in a part of the aluminum electrode 37 (a hole is formed on the surface corresponding to the bus bar electrode 34). Here, the silver paste is screen-printed and sintered to form a silver portion 371, and the ribbon 39 is fixed to the silver portion 371 with the solder 38 to obtain a necessary fixing strength.
　しかし、上述した従来のシリコン基板３１の裏面にアルミ電極を全面に形成してその上にリボン３９を半田付けしたのではリボン３９をシリコン基板３１に充分な強度で固定できない場合があるという問題があった。 However, when the aluminum electrode is formed on the entire back surface of the conventional silicon substrate 31 and the ribbon 39 is soldered thereon, there is a problem that the ribbon 39 cannot be fixed to the silicon substrate 31 with sufficient strength. there were.
　また、これを避けるために、上述した図６に示すように、アルミ電極３７の一部に穴を開けておき、ここに銀ペーストを塗布して焼結し、この上にリボン３９を半田付けして充分な固定強度を得る必要が生じてしまうという問題もあった。 In order to avoid this, as shown in FIG. 6 described above, a hole is made in a part of the aluminum electrode 37, a silver paste is applied thereto and sintered, and a ribbon 39 is soldered thereon. Then, it is necessary to obtain a sufficient fixing strength.
　本発明者らは、基板の裏面のアルミ電極の穴の部分に直接に半田付けすると共に穴の縁からアルミ電極の上に若干はみ出して半田付けすることにより、リボンを充分な固定強度で基板に固定かつ高変換効率を得る構成および方法を実験により発見した。 The present inventors soldered directly to the aluminum electrode hole on the back surface of the substrate, and slightly protruded from the edge of the hole onto the aluminum electrode, and soldered the ribbon to the substrate with sufficient fixing strength. The structure and method of obtaining a fixed and high conversion efficiency were found by experiments.
　そのため、本発明は、基板上に光を照射したときに高電子濃度を生成する領域を形成すると共に領域の上に光を透過する絶縁膜を形成し、絶縁膜の上に領域から電子を取り出す取出口であるフィンガー電極を形成してフィンガー電極を介して記電子を外部に取り出すと共に、基板の裏面から電子を流入させて回路を形成する太陽電池において、基板の裏面の全面にアルミ電極を形成した後に電極の一部に穴を形成し、あるいは基板の裏面の全面の一部分に穴を形成したアルミ電極を形成し、穴の内部の基板に半田付けすると共に、併せて穴の縁からアルミ電極の上側に０．１ｍｍ以上はみだして半田付けし、半田付けした穴の内部の基板の部分および穴の縁から０．１ｍｍ以上はみ出したアルミ電極の部分から電子をそれぞれ流入させ、太陽電池の変換効率を増大せる太陽電池を実現した。 Therefore, the present invention forms a region that generates a high electron concentration when light is irradiated onto a substrate, forms an insulating film that transmits light over the region, and extracts electrons from the region over the insulating film. An aluminum electrode is formed on the entire back surface of a substrate in a solar cell in which a finger electrode is formed as an outlet and electrons are taken out through the finger electrode and electrons are introduced from the back surface of the substrate to form a circuit. After that, a hole is formed in a part of the electrode, or an aluminum electrode with a hole is formed in a part of the entire back surface of the board, soldered to the board inside the hole, and the aluminum electrode from the edge of the hole together 0.1 mm or more is soldered to the upper side of the board, and electrons are allowed to flow from the part of the board inside the soldered hole and the part of the aluminum electrode protruding more than 0.1 mm from the edge of the hole, respectively, It was realized a solar cell to increase the conversion efficiency of the cell.
　この際、アルミ電極の穴を形成した部分は、表面の取出線に対応する部分とするようにしている。 際 At this time, the portion where the hole of the aluminum electrode is formed is a portion corresponding to the outgoing line on the surface.
　また、半田付けは、超音波半田付けするようにしている。 半 田 In addition, ultrasonic soldering is used.
　また、半田付けは、半田のみ、あるいは半田と取り出し線、あるいはプリ半田付けした取り出した線を半田付けするようにしている。 半 田 In addition, soldering is performed by soldering only solder, or solder and a lead wire, or a pre-soldered lead wire.
　また、半田付けは、半田付けされる部分の温度を半田が溶融する温度以下で室温以上に予備加熱した状態で、半田付けするようにしている。 In addition, soldering is performed in a state where the temperature of the portion to be soldered is lower than the temperature at which the solder melts and preheated to room temperature or higher.
　また、半田は、錫に亜鉛、アルミ、シリコンの１つ以上を含むようにしている。 (4) The solder contains at least one of zinc, aluminum, and silicon in tin.
　また、半田は、Ｐｂ，Ａｇ，Ｃｕを含まないようにしている。 (4) The solder does not contain Pb, Ag, and Cu.
　また、穴の縁からアルミ電極の上側に０．１ｍｍ以上はみだして半田付けとして、アルミ電極の上側に０．１ｍｍ以上から3．０ｍｍ以下だけはみだして半田付けするようにしている。 Also, soldering is performed by protruding 0.1 mm or more from the edge of the hole to the upper side of the aluminum electrode, and protruding 0.1 mm to 3.0 mm or less from the upper side of the aluminum electrode.
　本発明は、上述したように、基板の裏面のアルミ電極の穴の部分に直接に半田付けすると共に穴の縁からアルミ電極の上に若干はみ出して半田付けし、取出線を充分な固定強度で基板に固定かつ高変換効率を得る構成および方法を実現した。 As described above, the present invention solders directly to the aluminum electrode hole on the back surface of the substrate and slightly protrudes from the edge of the hole onto the aluminum electrode, and solders the extraction wire with sufficient fixing strength. A configuration and a method for fixing to a substrate and obtaining high conversion efficiency have been realized.
　これらにより、本発明は、基板の裏面のアルミ電極の穴の部分に直接にハンダ付けし、取出線の部分の抵抗値を小さくかつ充分な固定強度で基板に固定できる。 Accordingly, according to the present invention, it is possible to directly solder to the hole of the aluminum electrode on the back surface of the substrate and to reduce the resistance value of the lead wire portion to the substrate with sufficient fixing strength.
　また、基板の穴の縁からアルミ電極の上に０．１ｍｍ以上はみだして半田付けし、該はみして半田付けしたアルミ電極とそれにつながったアルミ電極から電子を基板に供給して太陽電池の変換効率を向上させることが実験で確認できた（図４、図５参照）。 Also, the aluminum electrode protruding from the edge of the hole of the substrate by 0.1 mm or more is soldered, and electrons are supplied to the substrate from the protruded and soldered aluminum electrode and the aluminum electrode connected thereto, and the Experiments confirmed that the conversion efficiency was improved (see FIGS. 4 and 5).
　図１は本発明の１実施例構成図を示す。 FIG. 1 shows a configuration diagram of an embodiment of the present invention.
　図１の（ａ）は全体の側面図を示し、図１の（ｂ）は図１の（ａ）の要部拡大図を示す。 (A) of FIG. 1 shows a side view of the whole, and (b) of FIG. 1 shows an enlarged view of a main part of (a) of FIG.
　図１において、基板（シリコン基板）１は、太陽電池を形成しようとするシリコンの基板（単結晶、多結晶）である。 In FIG. 1, a substrate (silicon substrate) 1 is a silicon substrate (single crystal or polycrystal) on which a solar cell is to be formed.
　基板裏面（Ａｌ）２は、基板１の裏面であって、裏面の全面にアルミ電極を形成した後に一部に穴を開けたり、あるいは穴のあるアルミ電極を基板１の裏面の全面に形成したりしたものである。 The back surface (Al) 2 of the substrate is the back surface of the substrate 1. After forming an aluminum electrode on the entire back surface, a hole is partially formed or an aluminum electrode having a hole is formed on the entire back surface of the substrate 1. Or something.
　基板加熱ヒータ３は、基板１を予備加熱する加熱体であって、基板１に半田付けする際に、半田が溶融する温度以下、室温以上に加熱するものであって、自動温度調整機構付きのものである。 The substrate heating heater 3 is a heating element for preheating the substrate 1 and, when soldering to the substrate 1, is heated to a temperature lower than a temperature at which the solder melts and to a temperature higher than a room temperature, and has an automatic temperature adjusting mechanism. Things.
　ＡＢＳ半田１１は、基板裏面(アルミ電極）２に半田付けする糸、リボン状などの半田を供給するに都合のよい形状を持つ長い半田材料である。半田材料は、錫（Ｓｎ）に、亜鉛（Ｚｎ）、アルミニウム（Ａｌ）、シリコン（Ｓｉ）の１つ以上を含み、鉛（Ｐｂ）、銀（Ａｇ）、銅（Ｃｕ）を含まない材料の合金（ＡＢＳ半田１１という）である。これら半田材料に依存するＡＢＳ半田１１の融点は、通常、１５０℃ないし３５０℃程度の範囲内にあり、材料の配合割合により決まるので、実験により溶融温度を算出し、この溶融温度に対して最適な予備加熱温度（ＡＢＳ半田１１が溶融しない室温以上の温度）を決定し、更に、コテ先２２を加熱して超音波を印加したときに溶融して基板裏面２の穴の内部の基板１の上に半田付けするに適切な温度を実験で決定する。これらにより、後述する図９の（ａ），（ｂ），（ｃ）の写真の通りの超音波半田付けが可能となり、リボン２２を半田付けしたときの引張強度が強く、かつ太陽電池の変換効率をより増大させることができた。尚、ＡＢＳ半田１１の半田材料の組成は、錫（Ｓｎ）が２０ないし９５ｗｔ％、亜鉛（Ｚｎ）が３ないし６０ｗｔ％、アルミニウム（Ａｌ）、シリコン（Ｓｉ）などの添加材は適量添加する。これら配合割合は、溶融温度、基板やリボンなどのＡＢＳ半田付けする対象に応じて実験により最適な配合割合を決める。 The ABS solder 11 is a long solder material having a shape convenient for supplying solder such as a thread or a ribbon to be soldered to the back surface (aluminum electrode) 2 of the substrate. The solder material is made of a material containing at least one of zinc (Zn), aluminum (Al), and silicon (Si) in tin (Sn) and not containing lead (Pb), silver (Ag), and copper (Cu). Alloy (referred to as ABS solder 11). The melting point of the ABS solder 11 which depends on these solder materials is usually in the range of about 150 ° C. to 350 ° C. and is determined by the compounding ratio of the material. A preheating temperature (a temperature not lower than room temperature at which the ABS solder 11 does not melt) is determined, and the soldering tip 22 is heated and melted when an ultrasonic wave is applied. The appropriate temperature for soldering on top is determined experimentally. As a result, ultrasonic soldering as shown in the photos of FIGS. 9A, 9B, and 9C described later becomes possible, the tensile strength when the ribbon 22 is soldered is high, and the conversion of the solar cell is performed. The efficiency could be further increased. In addition, the composition of the solder material of the ABS solder 11 is such that tin (Sn) is 20 to 95 wt%, zinc (Zn) is 3 to 60 wt%, and additives such as aluminum (Al) and silicon (Si) are added in appropriate amounts. These mixing ratios are determined optimally by experiments depending on the melting temperature and the target of ABS soldering such as a substrate or a ribbon.
　ＡＢＳ半田材料供給機構１２は、コテ先２２の基板１に対する移動速度に対応して、ＡＢＳ半田１１を所定速度（所定半田量、後述する）で該コテ先１２に供給する機構である。 The ABS solder material supply mechanism 12 is a mechanism for supplying the ABS solder 11 to the iron tip 12 at a predetermined speed (a predetermined amount of solder, which will be described later) in accordance with the moving speed of the iron tip 22 with respect to the substrate 1.
　リボン１３は、基板裏面（アルミ電極）２の穴を開けた基板１の部分あるいはプリ半田した部分に半田付けし、基板１から外部に電流を取り出したりなどするものである。尚、図１の（ａ）のように、ＡＢＳ半田１１を供給したときは基板裏面２の穴の部分の基板１に予備半田付け（超音波半田付け）し、図１の（ｂ）のように，ＡＢＳ半田１１と重ねてリボン１３を供給したときは基板裏面２の穴の部分の基板１にリボン１３が半田付け（超音波半田付け）する。予備半田付けした場合には、後の工程で、予備半田付けした部分にリボンを通常の半田付け（超音波なし半田付け）する。また、ＡＢＳ半田１１とリボン１３とを重ねて供給する代わりに、リボン１３に予めＡＢＳ半田１１を半田付けした半田付きリボンにしてもよい。この場合には、半田付きリボンは、穴の縁から基板裏面（アルミ電極）２の上に約０．１ｍｍ以上の半田がはみだすように半田を十分にリボン１３に予め半田付けしておく必要がある。 (4) The ribbon 13 is soldered to a portion of the substrate 1 where holes are formed in the back surface (aluminum electrode) 2 or to a pre-soldered portion to take out current from the substrate 1 to the outside. When the ABS solder 11 is supplied as shown in FIG. 1A, preliminary soldering (ultrasonic soldering) is performed on the substrate 1 in the hole portion on the back surface 2 of the substrate, as shown in FIG. 1B. Then, when the ribbon 13 is supplied while being superposed on the ABS solder 11, the ribbon 13 is soldered (ultrasonic soldering) to the substrate 1 in the hole portion on the back surface 2 of the substrate. When pre-soldering is performed, the ribbon is normally soldered (soldering without ultrasonic waves) to the pre-soldered portion in a later step. Instead of supplying the ABS solder 11 and the ribbon 13 in an overlapping manner, a ribbon with solder in which the ABS solder 11 is soldered to the ribbon 13 in advance may be used. In this case, the soldered ribbon needs to be soldered sufficiently to the ribbon 13 in advance so that the solder of about 0.1 mm or more protrudes from the edge of the hole onto the back surface (aluminum electrode) 2 of the substrate. is there.
　半田コテ２１は、コテ先２２を所定温度に加熱すると共に超音波を供給するものである。 The soldering iron 21 heats the iron tip 22 to a predetermined temperature and supplies ultrasonic waves.
　コテ先２２は、半田コテ２１の先端に取り付け、半田付けしようとする部分（基板裏面２の穴の部分等）に対して、超音波を印加すると共に、溶解させたＡＢＳ半田１１を供給し、半田付けするものである。 The soldering iron tip 22 is attached to the tip of the soldering iron 21, applies ultrasonic waves to a portion to be soldered (a hole portion on the back surface 2 of the substrate, etc.), and supplies the melted ABS solder 11. It is to be soldered.
　半田コテ加熱電源２３は、コテ先２２が所定温度になるように電源を供給するものであって、コテ先２２の部分の温度を検出して自動温度調整機構を有するものである。 The soldering iron heating power supply 23 supplies power so that the ironing tip 22 has a predetermined temperature, and has an automatic temperature adjustment mechanism by detecting the temperature of the ironing tip 22 portion.
　半田コテ超音波パワー発生機構２４は、コテ先２２から半田付けしようとする部分（基板裏面２の穴の部分等）に超音波を供給するものである。超音波のパワー（電源パワー）は、１から１０Ｗ程度でよく、弱すぎると超音波半田付けが不良となり、強すぎると超音波により膜（アルミ電極膜など）を破壊したり、逆に半田付け不良となったりするので、実験により最適なパワーを決定する。通常は１ないし数Ｗで行う。 (4) The soldering iron ultrasonic power generation mechanism 24 supplies an ultrasonic wave from the ironing tip 22 to a portion to be soldered (a hole or the like on the back surface 2 of the substrate). The ultrasonic power (power supply power) may be about 1 to 10 W. If it is too weak, the ultrasonic soldering becomes defective. If it is too strong, the film (such as an aluminum electrode film) is destroyed by the ultrasonic wave, or conversely, the soldering is performed. Since it may be defective, the optimum power is determined by experiments. Usually, it is performed at 1 to several watts.
　移動機構２５は、半田コテ２１を自動的に所定速度で移動、ここでは、右方向に所定速度で移動させる機構である。所定速度は、ＡＢＳ半田１１を自動供給するＡＢＳ半田材料供給機構１２と連動し、ＡＢＳ半田１１が基板裏面２の穴の縁から約０．１ｍｍ以上で、通常３ｍｍ以内までの基板裏面２のアルミ電極の上にはみだす程度にＡＢＳ半田１１が半田付けされるように調整（実験により調整、図４とその説明を参照）する。 The moving mechanism 25 is a mechanism for automatically moving the soldering iron 21 at a predetermined speed, here, moving the soldering iron 21 rightward at a predetermined speed. The predetermined speed is interlocked with the ABS solder material supply mechanism 12 that automatically supplies the ABS solder 11, and the ABS solder 11 is about 0.1 mm or more from the edge of the hole of the substrate back surface 2, and usually has an aluminum thickness of less than 3 mm. The adjustment is performed so that the ABS solder 11 is soldered to the extent that it protrudes above the electrodes (adjusted by experiment, see FIG. 4 and its description).
　次に、図１の構成の動作を説明する。
（１）予備加熱ヒータ３を有する図示外の台の上に基板（１５０ｍｍ程度の矩形の基板）１を裁置し、ＡＢＳ半田１１が溶融するよりも少し低い温度に調整する（実験で温度を決める）。
（２）半田コテ加熱電源２３が電源を供給してコテ先２２を所定温度に加熱すると共に、半田コテ超音波パワー発生機構２４が超音波を発生させてコテ先２２に超音波を供給する（加熱温度、超音波パワーはＡＢＳ半田１１の材料により異なるので、材料毎に実験により決める）。
（３）図１の（ａ）のように、コテ先２２でＡＢＳ半田１１を溶解しつつ超音波を基板裏面（アルミ電極）２の穴の部分の基板１に供給しつつ（軽く押し当てた状態で）、移動機構２５がコテ先２２を図では右方向に移動させる。同時に、ＡＢＳ半田材料供給機構１２がＡＢＳ半田１１を所定速度で供給し、溶融したＡＢＳ半田１１が基板裏面２の穴の縁から基板裏面（アルミ電極）２の上を約０．１ｍｍ以上にはみだして半田付けされるように、移動させる（これらの関係となるように実験でコテ先２２の移動速度、ＡＢＳ半田１１の供給量を決める。この際、更に加熱温度、超音波パワーも併せて調整する）。
（４）以上により、図１の（ａ）のように，ＡＢＳ半田１１のみを供給した場合には、基板裏面（アルミ電極）２の穴の部分の基板１と、穴の縁から基板裏面（アルミ電極）２の上に約０．１ｍｍ以上から３ｍｍ程度にはみだしてＡＢＳ半田１１を半田付けする（図４参照）。
（５）（４）の予備半田付けした場合には、後の工程で予備半田した部分に、リボンを半田付け（通常の半田付けで、超音波なし半田付け）し、外部への取出線とする。
（６）また、（４）と（５）の代わりに、図１の（ｂ）のように、ＡＢＳ半田１１とリボン１３とを合わせて供給した場合あるいは半田付きリボンを供給した場合には、基板裏面（アルミ電極）２の穴の部分の基板１と、穴の縁から基板裏面（アルミ電極）２の上に０．１ｍｍ以上から３ｍｍ程度にはみだしてＡＢＳ半田１１を半田付けする。 Next, the operation of the configuration of FIG. 1 will be described.
(1) The substrate (a rectangular substrate of about 150 mm) 1 is placed on a stand (not shown) having the preliminary heater 3 and adjusted to a temperature slightly lower than the melting of the ABS solder 11 (experimentally adjusting the temperature). Decide).
(2) The soldering iron heating power supply 23 supplies power to heat the ironing tip 22 to a predetermined temperature, and the soldering iron ultrasonic power generation mechanism 24 generates ultrasonic waves to supply ultrasonic waves to the ironing tip 22 ( Since the heating temperature and the ultrasonic power vary depending on the material of the ABS solder 11, it is determined by experiment for each material).
(3) As shown in (a) of FIG. 1, the ultrasonic wave is supplied to the substrate 1 in the hole portion of the substrate back surface (aluminum electrode) 2 while melting the ABS solder 11 with the iron tip 22 (lightly pressed). In this state, the moving mechanism 25 moves the iron tip 22 rightward in the drawing. At the same time, the ABS solder material supply mechanism 12 supplies the ABS solder 11 at a predetermined speed, and the melted ABS solder 11 protrudes from the edge of the hole on the substrate back surface 2 onto the substrate back surface (aluminum electrode) 2 by about 0.1 mm or more. (The moving speed of the iron tip 22 and the supply amount of the ABS solder 11 are experimentally determined so as to satisfy these relationships. At this time, the heating temperature and the ultrasonic power are also adjusted. Do).
(4) As described above, when only the ABS solder 11 is supplied as shown in FIG. 1A, the substrate 1 in the hole portion of the substrate back surface (aluminum electrode) 2 and the substrate back surface (aluminum electrode) 2 The ABS solder 11 is soldered on the aluminum electrode 2 so as to protrude from about 0.1 mm or more to about 3 mm (see FIG. 4).
(5) In the case of the pre-soldering in (4), the ribbon is soldered to the portion pre-soldered in a later step (usual soldering, soldering without ultrasonic wave), and I do.
(6) Also, instead of (4) and (5), when the ABS solder 11 and the ribbon 13 are supplied together or the ribbon with solder is supplied as shown in FIG. 1B, The ABS solder 11 is soldered by protruding from the edge of the hole of the substrate 1 at the hole portion of the substrate back surface (aluminum electrode) 2 to the substrate back surface (aluminum electrode) 2 by about 0.1 mm to 3 mm.
　以上によって、基板裏面（アルミ電極）２の穴の部分の基板１に直接にＡＢＳ半田１１を予備半田付けしたり、リボン１３をＡＢＳ半田１１で半田付けしたりすることにより、後述するように、太陽電池の効率を良好にすることが可能となると共に、ＡＢＳ半田１１で直接に裏面基板２の穴を介して基板１に半田付けして強固に該基板１にリボンを固定することが可能となる。 As described above, the preliminary soldering of the ABS solder 11 or the soldering of the ribbon 13 with the ABS solder 11 is directly performed on the substrate 1 in the portion of the hole of the substrate back surface (aluminum electrode) 2 as described later. The efficiency of the solar cell can be improved, and the ribbon can be firmly fixed to the substrate 1 by being directly soldered to the substrate 1 through the hole of the rear substrate 2 with the ABS solder 11. Become.
　尚、実際に実施した１例では、基板加熱温度(予備加熱)を１８０℃を標準にして、少なくとも上限温度は２００℃以下（ＡＢＳ半田が溶融しない温度以下）です。これ以上にするとこの基板では損傷しました。この場合の半田コテ温度は４００℃としています。高くでも５００℃程度です。これは、コテ先の移動速度、半田材料供給速度で調整します。速度が速くなれば温度を上げます。超音波出力は、裏面に対しては６ワット以下、表面に対しては３ワット以下としています。以上の条件は、錫と亜鉛の合金を主材料としたもので融点が約２１７℃の半田材料の場合です。半田材料、基板の種類、コテ先の移動速度、半田供給量などに依存し、予備加熱温度、コテ先（半田コテ）温度、コテ先の移動速度、半田供給速度などを実験し、良好な超音波半田付けができるように最適な条件に調整する必要があります。 １In addition, in one example that was actually implemented, the substrate heating temperature (preliminary heating) was set at 180 ° C as standard, and at least the upper limit temperature was 200 ° C or less (below the temperature at which the ABS solder does not melt). Anything above this board was damaged. The soldering iron temperature in this case is 400 ° C. It is about 500 ℃ at most. This is adjusted by the moving speed of the iron tip and the supply speed of the solder material. The higher the speed, the higher the temperature. The ultrasonic output is less than 6 watts for the back side and less than 3 watts for the front side. The above conditions are for a solder material with a melting point of about 217 ° C, which is mainly made of an alloy of tin and zinc. Depending on the solder material, the type of board, the moving speed of the iron tip, the amount of solder supply, etc., experiment on the preheating temperature, the temperature of the iron tip (solder iron), the moving speed of the iron tip, the solder supply speed, etc. It is necessary to adjust to the optimal condition so that sonic soldering can be performed.
　次に、図２のフローチャートの順番に従い、図１の構成の動作を詳細に説明する。 Next, the operation of the configuration of FIG. 1 will be described in detail according to the order of the flowchart of FIG.
　図２は、本発明の動作説明フローチャート（全体）を示す。 FIG. 2 shows a flowchart (overall) for explaining the operation of the present invention.
　図２において、Ｓ１は、Ｓｉ基板を用意する。 に お い て In FIG. 2, S1 prepares a Si substrate.
　Ｓ２は、表面処理を行う。これは、Ｓ１で用意したシリコン基板（例えばＮ型）上に、窒化膜を形成、更に、フィンガー電極、バスバー電極などのパターンを形成する。これは、例えば従来の図６と同様に、シリコン基板３１の表側に、窒化膜３２を形成、フィンガー電極３３、バスバー電極３４などのパターンを形成する。 In step S2, a surface treatment is performed. In this method, a nitride film is formed on the silicon substrate (for example, N-type) prepared in S1, and patterns such as finger electrodes and bus bar electrodes are formed. In this case, for example, a nitride film 32 is formed on the front side of a silicon substrate 31 and patterns such as a finger electrode 33 and a bus bar electrode 34 are formed in the same manner as in the conventional FIG.
　Ｓ３は、裏面処理を行う。これは、シリコン基板の裏面にアルミパターンを形成、例えばシリコン基板の裏側の全面に穴の開いたアルミ電極をアルミペーストでスクリーン印刷して形成する。そして、本発明はＳ５に進む。 In step S3, a back surface process is performed. In this method, an aluminum pattern is formed on the back surface of a silicon substrate, for example, an aluminum electrode having holes on the entire back surface of the silicon substrate is screen-printed with an aluminum paste. Then, the present invention proceeds to S5.
　Ｓ５は、焼結する。これは、Ｓ２の表面処理、Ｓ３の裏面処理で形成したパターンを一括して焼結する。 S5 is sintered. In this process, the patterns formed by the surface treatment in S2 and the back surface treatment in S3 are sintered together.
　以上により、本発明では、Ｓ１からＳ３、Ｓ５で基板の表側にフィンガー電極、バスバー電極、裏側に穴の開いたアルミ電極を形成できたこととなる。 From the above, according to the present invention, finger electrodes, bus bar electrodes, and aluminum electrodes with holes on the back side were formed on the front side of the substrate in S1 to S3, S5.
　Ｓ６は、測定（１）を行う。これは、Ｓ７のＡＢＳ半田付け前に、探針を用いてＡＢＳ半田付けする前の太陽電池の電気的特性を測定する（図５の半田前のデータを参照）。 In step S6, measurement (1) is performed. This measures the electrical characteristics of the solar cell before ABS soldering using a probe before ABS soldering in S7 (see data before soldering in FIG. 5).
　Ｓ７は、ＡＢＳ半田付けを行う。これは、Ｓｉ基板のアルミ電極の穴の開いた部分の基板１に直接にＡＢＳ半田を半田付けすると共に、穴の縁からアルミ電極の上に約０．１ｍｍ以上はみだして半田付けする。尚、リボン１３を一緒に半田付けしてもよい（図１の（ｂ）参照）
　Ｓ８は、測定（２）を行う。これは、Ｓ７のＡＢＳ半田付け後に、太陽電池の電気的特性を測定する（図５の半田後のデータを参照）。 In step S7, ABS soldering is performed. In this method, the ABS solder is directly soldered to the portion of the Si substrate where the aluminum electrode has a hole, and the solder is protruded from the edge of the hole onto the aluminum electrode by about 0.1 mm or more. The ribbons 13 may be soldered together (see FIG. 1B).
In S8, measurement (2) is performed. This measures the electrical characteristics of the solar cell after the ABS soldering in S7 (see data after soldering in FIG. 5).
　以上のように、Ｓｉ基板の表面に窒化膜を形成、フィンガー電極、バスバー電極などのパターンを形成、Ｓｉ基板の裏面に穴の開いたアルミ電極のパターンを形成した後、一括焼結してこれらパターンを形成することが可能となる。 As described above, a nitride film is formed on the surface of the Si substrate, patterns such as finger electrodes and bus bar electrodes are formed, and a pattern of an aluminum electrode having a hole on the back surface of the Si substrate is formed, and then sintered together. A pattern can be formed.
　一方、従来は、Ｓ１からＳ３に続いて、Ｓ４で、さらに銀ペーストをＳｉ基板上に塗布する。これは、Ｓ３の裏面処理で形成した穴の開いたアルミ電極の部分に、さらに銀ペーストをスクリーン印刷して当該アルミ電極の穴の内部のＳｉ基板の上に銀パターンを形成する。そして、本発明と同様に、Ｓ５からＳ８を行うことにより、Ｓｉ基板の表面に窒化膜を形成、フィンガー電極、バスバー電極などのパターンを形成、Ｓｉ基板の裏面に穴の開いたアルミ電極のパターンの内部に銀パターンが形成され、これにリボンを半田付けして外部取出線とし、該外部取出線を銀パターンを介して基板に強く固定することを実現している。 On the other hand, conventionally, in S4 following S1 to S3, a silver paste is further applied on the Si substrate. In this method, a silver paste is screen-printed on a portion of the aluminum electrode having a hole formed by the back surface treatment in S3 to form a silver pattern on the Si substrate inside the hole of the aluminum electrode. Then, similarly to the present invention, by performing S5 to S8, a nitride film is formed on the surface of the Si substrate, patterns such as finger electrodes and bus bar electrodes are formed, and a pattern of an aluminum electrode having a hole on the back surface of the Si substrate is formed. Has a silver pattern formed therein, and a ribbon is soldered to the silver pattern to form an external lead, and the external lead is strongly fixed to the substrate via the silver pattern.
　図３は、本発明の詳細動作説明フローチャートを示す。これは、図２のＳ７のＡＢＳ半田付けの詳細フローチャートである。 FIG. 3 is a flowchart illustrating the detailed operation of the present invention. This is a detailed flowchart of the ABS soldering in S7 of FIG.
　図３において、Ｓ１１は、基板を予備加熱する。これは、図１の基板１を図示外の台に裁置した状態で基板加熱ヒータ３で基板１を予備加熱し、ＡＢＳ半田１１が溶融する温度よりも若干低い温度に加熱する。 に お い て In FIG. 3, S11 preheats the substrate. In this method, the substrate 1 is preheated by the substrate heater 3 with the substrate 1 of FIG. 1 placed on a stand (not shown), and heated to a temperature slightly lower than the temperature at which the ABS solder 11 melts.
　Ｓ１２は、コテ先を加熱、超音波を印加する。これは、図１の半田コテ加熱電源２３から電源を半田コテ２１に供給し、コテ先２２が所定温度になるように加熱すると共に、半田コテ超音波パワー発生機構２４が所定出力の超音波をコテ先２２に供給する。 In step S12, the iron tip is heated and ultrasonic waves are applied. This is because power is supplied from the soldering iron heating power supply 23 of FIG. 1 to the soldering iron 21 to heat the ironing tip 22 to a predetermined temperature, and the soldering iron ultrasonic power generation mechanism 24 generates ultrasonic waves of a predetermined output. It is supplied to the iron tip 22.
　Ｓ１３は、ＡＢＳ半田を供給する。これは、図１のＡＢＳ半田材料供給機構１２が糸あるいはリボン状のＡＢＳ半田１１を所定速度でコテ先２１と半田付けする部分との間に供給する。ＡＢＳ半田１１の供給量は、基板裏面２の穴の開いた部分と該穴の縁から基板裏面（アルミ電極）２の上に約０．１ｍｍ以上はみだす程度に供給する（図４参照、実験で供給量は決める）。尚、図１の（ｂ）のように、リボン１３を半田付けする場合には、ＡＢＳ半田１１に重ねてリボン１３を供給すればよい。 Step S13 supplies ABS solder. This is because the ABS solder material supply mechanism 12 in FIG. 1 supplies the thread or ribbon-shaped ABS solder 11 at a predetermined speed between the iron tip 21 and a portion to be soldered. The supply amount of the ABS solder 11 is supplied so as to protrude by about 0.1 mm or more from the edge of the hole of the substrate back surface 2 and the edge of the hole onto the substrate back surface (aluminum electrode) 2 (see FIG. The supply amount is decided). When the ribbon 13 is to be soldered as shown in FIG. 1B, the ribbon 13 may be supplied over the ABS solder 11.
　Ｓ１４は、コテ先を移動する。これは、図１のコテ先２２を移動機構２５で移動、図１では右方向に移動する。 $ S14 moves the iron tip. This moves the iron tip 22 of FIG. 1 by the moving mechanism 25, and moves to the right in FIG.
　以上により、ＡＢＳ半田１１が基板裏面２の穴の開いた部分と、該穴の縁から基板裏面２の上に約０．１ｍｍ以上はみ出すように、コテ先２２を移動させ、超音波半田付けすることが可能となる。 As described above, the iron tip 22 is moved and ultrasonically soldered so that the ABS solder 11 protrudes from the edge of the hole on the substrate back surface 2 by approximately 0.1 mm or more from the edge of the hole on the substrate rear surface 2. It becomes possible.
　図４は、本発明のサンプル写真例を示す。 FIG. 4 shows a sample photograph example of the present invention.
　図４の（ａ）は接触幅約０．１ｍｍのサンプル写真を示し、図４の（ｂ）は接触幅約０．５ｍｍのサンプル写真を示し、図４の（ｃ）は接触幅約１．０ｍｍのサンプル写真を示す。ここで、各写真中の横方向の帯状のものが、裏面基板２の帯状の穴の丁度真上に覆う（はみだし量約０．１ｍｍ、０．５ｍｍ、１．０ｍｍ）ように、ＡＢＳ半田１１を半田付けした写真例をそれぞれ示す。 4A shows a sample photograph having a contact width of about 0.1 mm, FIG. 4B shows a sample photograph having a contact width of about 0.5 mm, and FIG. A sample photograph of 0 mm is shown. Here, the ABS solder 11 is so arranged that the horizontal strip in each photograph covers just above the strip-shaped hole of the back substrate 2 (protruding amount: about 0.1 mm, 0.5 mm, 1.0 mm). Are shown below.
　図４の（ａ－１），（ｂ－１），（ｃ－１）は、図４の（ａ），（ｂ），（ｃ）の側面模式図をそれぞれ示す。接触幅は、穴の縁から基板裏面（Ａｌ）２の上へのはみ出し量であって、約０．１ｍｍ、０．５ｍｍ、１．０ｍｍの例を示す。 (A), (b-1), and (c-1) of FIG. 4 are schematic side views of (a), (b), and (c) of FIG. 4, respectively. The contact width is the amount of protrusion from the edge of the hole onto the substrate back surface (Al) 2, and shows examples of about 0.1 mm, 0.5 mm, and 1.0 mm.
　以上のように、基板（Ｓｉ）１上に形成した裏面基板（アルミ電極）２に帯状の穴を設け、該帯状の穴の部分にＡＢＳ半田１１を超音波半田付けしたり（図１の（ａ）参照）、あるいはＡＢＳ半田１１にリボン１３を重ねて超音波半田付けしたり（図１の（ｂ）参照））すると共に、ＡＢＳ半田１１の供給量あるいはコテ先２２の移動量を調整して穴の縁から裏面基板（アルミ電極）２の上に約０．１ｍｍ、０．５ｍｍ、１．０ｍｍはみだすように超音波半田付けする。 As described above, a band-shaped hole is provided in the back substrate (aluminum electrode) 2 formed on the substrate (Si) 1, and the ABS solder 11 is ultrasonically soldered to the band-shaped hole (see FIG. a)), or by superimposing the ribbon 13 on the ABS solder 11 and performing ultrasonic soldering (see FIG. 1B), and adjusting the supply amount of the ABS solder 11 or the movement amount of the iron tip 22. Ultrasonic soldering is performed so as to protrude from the edge of the hole on the back substrate (aluminum electrode) 2 by about 0.1 mm, 0.5 mm, and 1.0 mm.
　図５は、本発明の測定例を示す。これは、既述した図４の（ａ），（ｂ），（ｃ）のＡＢＳ半田付け前（半田前）と、半田付け後（半田後）との太陽電池の電気的特性の測定例を示す。各測定例は、１０個の測定例の平均値を示す。また、測定は、図４の基板裏面（アルミ電極）２の帯状の穴の中央部分（半田前は穴の中央部分の基板１の部分、半田後は半田付けした穴の中央部分の該半田の部分）に接触端子を接触させて電気的特性を測定した。 FIG. 5 shows a measurement example of the present invention. This is a measurement example of the electric characteristics of the solar cell before (before soldering) and after (after soldering) the ABS soldering of FIGS. 4A, 4B, and 4C described above. Show. Each measurement example shows an average value of ten measurement examples. The measurement was performed at the center of a band-shaped hole on the back surface (aluminum electrode) 2 of the substrate in FIG. 4 (before soldering, the portion of the substrate 1 at the center of the hole, and after soldering, at the center of the soldered hole. The contact terminal was brought into contact with the contact portion to measure the electrical characteristics.
　図５において、測定例の１回、２回、３回は、図４の（ａ）接触幅約０．１ｍｍ，（ｂ）接触幅約０．５ｍｍ，（ｃ）接触幅約１．０ｍｍにそれぞれ対応する。ここで、Ｉｓｃは太陽電池の短絡電流を示し、Ｖｏｃは太陽電池の開放電圧を示し、ＥＦＦは太陽電池の最大効率を示し、ＦＦは太陽電池の最大効率／（ＶｏｃｘＩｓｃ）を示す。「半田前」はＡＢＳ半田を半田付けする前の値を示し、「半田後」はＡＢＳ半田を半田付けした後の値を示し、「変化量」は半田前から半田後の変化量を示す。 In FIG. 5, one, two, and three times of the measurement examples correspond to (a) contact width of about 0.1 mm, (b) contact width of about 0.5 mm, and (c) contact width of about 1.0 mm in FIG. Each corresponds. Here, Isc indicates the short-circuit current of the solar cell, Voc indicates the open-circuit voltage of the solar cell, EFF indicates the maximum efficiency of the solar cell, and FF indicates the maximum efficiency of the solar cell / (VocxIsc). "Before soldering" indicates a value before soldering the ABS solder, "After soldering" indicates a value after soldering the ABS solder, and "Change amount" indicates a change amount from before soldering to after soldering.
　ここで、最大効率（ＥＦＦ）は、
　　・測定例の「１回」（接触幅約０．１ｍｍ）は変化量がー０．４０
　　　　　　　「２回」（接触幅約０．５ｍｍ）は変化量がー０．１８
　　　　　　　「３回」（接触幅約１．０ｍｍ）は変化量がー０．１３
と接触幅が増大するに従い、「半田前」から「半田後」の最大効率の変化量が小さく、つまり、ＡＢＳ半田１１を、アルミ電極（基板裏面）２の穴の縁から当該アルミ電極２の上のはみ出し量が約０．１ｍｍ、０．５ｍｍ、１．０ｍｍと増大するに伴い、最大効率の「半田前」から「半田後」の変化量が小さくなることが本実験で初めて判明した。 Here, the maximum efficiency (EFF) is
・ In the measurement example, the change amount is -0.40 for "one time" (contact width: about 0.1 mm).
"2 times" (contact width about 0.5 mm) has a change of -0.18
"3 times" (contact width about 1.0mm) is -0.13
As the contact width increases, the amount of change in the maximum efficiency from “before soldering” to “after soldering” decreases, that is, the ABS solder 11 is moved from the edge of the hole of the aluminum electrode (back surface of the substrate) 2 to the aluminum electrode 2. It was found for the first time in the present experiment that the change in the maximum efficiency from "before soldering" to "after soldering" became smaller as the protrusion amount increased to about 0.1 mm, 0.5 mm, and 1.0 mm.
　即ち、ＡＢＳ半田１１を、アルミ電極（基板裏面）２の穴の縁から当該アルミ電極２の上へのはみ出し量が約０．１ｍｍ、０．５ｍｍ、１．０ｍｍと増大させることで、はみだしたＡＢＳ半田１１の部分（０．１ｍｍ、０．５ｍｍ、１，０ｍｍ）からアルミ電極を介して基板１に電子が放出される経路が付加（増大）され、この分だけ最大効率が改善されたものである。 That is, the ABS solder 11 protrudes from the edge of the hole of the aluminum electrode (substrate back surface) 2 by increasing the amount of protrusion from the edge of the hole to the aluminum electrode 2 to about 0.1 mm, 0.5 mm, and 1.0 mm. A path in which electrons are emitted from the portion of the ABS solder 11 (0.1 mm, 0.5 mm, 1.0 mm) to the substrate 1 through the aluminum electrode is added (increased), and the maximum efficiency is improved by that amount. It is.
本発明の１実施例構成図である。FIG. 1 is a configuration diagram of one embodiment of the present invention. 本発明の動作説明フローチャート（全体）である。5 is a flowchart (overall) illustrating the operation of the present invention. 本発明の詳細動作説明フローチャートである。4 is a detailed operation explanatory flowchart of the present invention. 本発明のサンプル写真例である。It is a sample photograph example of the present invention. 本発明の測定例である。It is a measurement example of the present invention. 従来技術の説明図である。It is explanatory drawing of a prior art.
１：基板（シリコン基板）
２：基板裏面（Ａｌ）
３：基板加熱ヒータ（予備加熱）
１１：ＡＢＳ半田
１２：ＡＢＳ半田材料供給機構
２１：半田コテ
２２：コテ先
２３：半田コテ加熱電源
２４：半田コテ超音波パワー発生機構
２５：移動機構 1: Substrate (silicon substrate)
2: Substrate back surface (Al)
3: Substrate heater (preliminary heating)
11: ABS solder 12: ABS solder material supply mechanism 21: solder iron 22: iron tip 23: solder iron heating power supply 24: solder iron ultrasonic power generation mechanism 25: moving mechanism

Claims (9)

  1. 　基板上に光を照射したときに高電子濃度を生成する領域を形成すると共に該領域の上に光を透過する絶縁膜を形成し、該絶縁膜の上に前記領域から電子を取り出す取出口であるフィンガー電極を形成して該フィンガー電極を介して前記電子を外部に取り出すと共に、前記基板の裏面から前記電子を流入させて回路を形成する太陽電池において、
    　前記基板の裏面の全面にアルミ電極を形成した後に該電極の一部に穴を形成し、あるいは前記基板の裏面の全面の一部分に穴を形成したアルミ電極を形成し、該穴の内部の前記基板に半田付けすると共に、併せて該穴の縁からアルミ電極の上側に０．１ｍｍ以上はみだして半田付けし、
    　前記半田付けした穴の内部の基板の部分および穴の縁から０．１ｍｍ以上はみ出したアルミ電極の部分から電子をそれぞれ流入させ、太陽電池の変換効率を増大せることを特徴とする太陽電池。     A region that generates a high electron concentration when light is irradiated on the substrate is formed, and an insulating film that transmits light is formed on the region, and an outlet for extracting electrons from the region is formed on the insulating film. A solar cell that forms a finger electrode and takes out the electrons to the outside through the finger electrode, and forms a circuit by flowing the electrons from the back surface of the substrate,
    After forming an aluminum electrode on the entire back surface of the substrate, a hole is formed in a part of the electrode, or an aluminum electrode having a hole formed on a part of the entire back surface of the substrate is formed, and the inside of the hole is formed. Along with soldering to the board, together with the edge of the hole above the aluminum electrode over 0.1mm and solder
    A solar cell, wherein electrons are allowed to flow from a part of the substrate inside the soldered hole and a part of the aluminum electrode protruding from the edge of the hole by 0.1 mm or more to increase the conversion efficiency of the solar cell.
  2. 　前記アルミ電極の穴を形成した部分は、表面の前記取出線に対応する部分としたことを特徴とする請求項１記載の太陽電池。 The solar cell according to claim 1, wherein a portion of the aluminum electrode where the hole is formed is a portion corresponding to the outgoing line on the surface.
  3. 　前記半田付けは、超音波半田付けであることを特徴とする請求項１から請求項２のいずれかに記載の太陽電池。 (3) The solar cell according to any one of (1) to (2), wherein the soldering is ultrasonic soldering.
  4. 　前記半田付けは、半田のみ、あるいは半田と取り出し線、あるいはプリ半田付けした取り出した線を半田付けすることを特徴とする請求項１から請求項３のいずれかに記載の太陽電池。 (4) The solar cell according to any one of (1) to (3), wherein the soldering is performed by soldering only the solder, a solder and a lead wire, or a pre-soldered lead wire.
  5. 　前記半田付けは、半田付けされる部分の温度を半田が溶融する温度以下で室温以上に予備加熱した状態で、半田付けすることを特徴とする請求項１から請求項４のいずれかに記載の太陽電池。 The soldering according to any one of claims 1 to 4, wherein the soldering is performed in a state where the temperature of a portion to be soldered is preliminarily heated to a temperature equal to or lower than a temperature at which the solder melts and equal to or higher than a room temperature. Solar cells.
  6. 　前記半田は、錫に亜鉛、アルミ、シリコンの１つ以上を含むことを特徴とする請求項１から請求項５のいずれかに記載の太陽電池。 The solar cell according to any one of claims 1 to 5, wherein the solder contains at least one of zinc, aluminum, and silicon in tin.
  7. 　請求項６の半田は、Ｐｂ，Ａｇ，Ｃｕを含まないことを特徴とする太陽電池。 A solar cell according to claim 6, wherein the solder does not contain Pb, Ag, and Cu.
  8. 　前記穴の縁からアルミ電極の上側に０．１ｍｍ以上はみだして半田付けとして、アルミ電極の上側に０．１ｍｍ以上から３．０ｍｍ以下だけはみだして半田付けしたことを特徴とする請求項１から請求項７のいずれかに記載の太陽電池。 2. The method according to claim 1, wherein the solder is soldered by protruding 0.1 mm or more from the edge of the hole to the upper side of the aluminum electrode, and protruding by 0.1 mm to 3.0 mm or less on the upper side of the aluminum electrode. Item 10. A solar cell according to any one of Items 7 to 9.
  9. 　基板上に光を照射したときに高電子濃度を生成する領域を形成すると共に該領域の上に光を透過する絶縁膜を形成し、該絶縁膜の上に前記領域から電子を取り出す取出口であるフィンガー電極を形成して該フィンガー電極を介して前記電子を外部に取り出すと共に、前記基板の裏面から前記電子を流入させて回路を形成する太陽電池の製造方法において、
    　前記基板の裏面の全面にアルミ電極を形成した後に該電極の一部に穴を形成し、あるいは前記基板の裏面の全面の一部分に穴を形成したアルミ電極を形成し、該穴の内部の前記基板に半田付けすると共に、併せて該穴の縁からアルミ電極の上側に０．１ｍｍ以上はみだして半田付けし、
    　前記半田付けした穴の内部の基板の部分および穴の縁から０．１ｍｍ以上はみ出したらアルミ電極の部分から電子をそれぞれ流入させ、太陽電池の変換効率を増大させることを特徴とする太陽電池の製造方法。     A region that generates a high electron concentration when light is irradiated on the substrate is formed, and an insulating film that transmits light is formed on the region, and an outlet for extracting electrons from the region is formed on the insulating film. A method for manufacturing a solar cell, in which a certain finger electrode is formed and the electrons are extracted to the outside through the finger electrode, and a circuit is formed by flowing the electrons from the back surface of the substrate.
    After forming an aluminum electrode on the entire back surface of the substrate, a hole is formed in a part of the electrode, or an aluminum electrode having a hole formed on a part of the entire back surface of the substrate is formed, and the inside of the hole is formed. Along with soldering to the board, together with the edge of the hole above the aluminum electrode over 0.1mm and solder
    Manufacturing a solar cell characterized by increasing the conversion efficiency of a solar cell by allowing electrons to flow from an aluminum electrode part when it protrudes 0.1 mm or more from the board part inside the soldered hole and the edge of the hole. Method.
PCT/JP2019/024850 2018-06-26 2019-06-22 Solar cell and method for manufacturing solar cell WO2020004290A1 (en)

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