WO2020000893A1 - 感应膜的制作工艺和触摸屏的制作方法 - Google Patents

感应膜的制作工艺和触摸屏的制作方法 Download PDF

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Publication number
WO2020000893A1
WO2020000893A1 PCT/CN2018/118226 CN2018118226W WO2020000893A1 WO 2020000893 A1 WO2020000893 A1 WO 2020000893A1 CN 2018118226 W CN2018118226 W CN 2018118226W WO 2020000893 A1 WO2020000893 A1 WO 2020000893A1
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Prior art keywords
photoresist layer
photomask
light
substrate
conductive
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PCT/CN2018/118226
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English (en)
French (fr)
Inventor
刘天保
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Guangzhou Shiyuan Electronics Thecnology Co Ltd
Guangzhou Shirui Electronics Co Ltd
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Guangzhou Shiyuan Electronics Thecnology Co Ltd
Guangzhou Shirui Electronics Co Ltd
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Application filed by Guangzhou Shiyuan Electronics Thecnology Co Ltd, Guangzhou Shirui Electronics Co Ltd filed Critical Guangzhou Shiyuan Electronics Thecnology Co Ltd
Publication of WO2020000893A1 publication Critical patent/WO2020000893A1/zh
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

Definitions

  • the present application relates to the field of touch screens, and in particular, to a manufacturing process of a sensing film and a manufacturing method of a touch screen.
  • the manufacturing method of the metal grid in the sensing film of the touch screen mainly includes a yellow light method, an imprint method, a silk screen method, and a printing method.
  • the yellow light method is mainly applied to the production of metal grids of pure metals such as copper, nickel, and silver.
  • the advantages of this method are: the performance and appearance of the produced metal grid are the best; the disadvantage is that the photomask cannot be used universally. Each metal grid with a different size design needs a corresponding photomask.
  • the photomask production cycle is long and expensive, which is not conducive to production transfer and production line equipment utilization. This method is limited to the high cost of photomask opening, which hinders the promotion.
  • the embossing method is mainly applied to the production of metal grids with mixed conductive materials such as silver paste.
  • the advantages of this method are: the performance and appearance of the metal grid obtained are the best; the disadvantage is that the embossing mold cannot be used universally, and it requires Dedicated design for mold opening is expensive, and the mold manufacturing cycle is long, which affects manufacturing efficiency, case opening schedule, and timeliness. This method is limited to the cost of mold opening, which leads to hindered promotion.
  • the screen printing method is mainly used in the production of metal grids with mixed conductive materials such as silver paste, and the printing method is mainly used in the production of metal grids with mixed conductive materials and enameled wires.
  • the disadvantages of these two methods are: the wire diameter is rough, the effect is inferior, and the appearance is hidden. It is limited to low-end applications in a small part of the market and cannot be applied to high-end mainstream applications.
  • the current best-performing metal grid production methods are better in the yellow light process category and the embossing category.
  • the yellow light method category has the best effect and is the most mainstream in the market, but the development cost of the photomask is extremely expensive.
  • the main purpose of the present application is to provide a manufacturing process of a sensing film and a manufacturing method of a touch screen, so as to solve the problem that the yellow light method needs to separately develop expensive photomasks for metal grids of different sizes in the prior art.
  • a manufacturing process of an induction film includes a conductive grid.
  • the manufacturing process includes step S1, providing a substrate, and providing a photoresist layer on the substrate.
  • Step S2 using a photomask group to pattern the photoresist layer, the photomask group includes a plurality of photomasks stacked in sequence, and at least one of the photomasks has a light-shielding part of the photomask in the other
  • the projection on the photomask overlaps a part of the light-transmitting part of another photomask; step S3, removing a part of the material of the substrate that is not masked by the photoresist layer to form the conductive grid; or on the exposed substrate
  • a conductive material is disposed on the surface to form the above-mentioned conductive grid; step S4, removing the patterned photoresist layer.
  • the photomask group includes two photomasks, which are a first photomask and a second photomask, respectively.
  • the first photomask includes a first light-shielding portion and a plurality of first light-transmitting portions, and the plurality of first light-transmitting portions are sequentially spaced apart.
  • the second photomask includes a second light-shielding portion and a second light-transmitting portion. In step S2, the projection of the second light-shielding portion on the first mask and a portion of the plurality of first light-transmitting portions overlap each other.
  • a plurality of the first light transmitting portions are arranged at the same interval.
  • each of the second light-shielding sections is arranged at intervals.
  • the projection of each of the second light-shielding sections on the first mask and a part of the plurality of first light-transmitting sections are both. overlapping.
  • the step S2 includes: sequentially covering the first photomask and the second photomask on a surface of the photoresist layer far from the substrate; and exposing the photoresist layer provided with the photomask group. ; Developing the photoresist layer after exposure, so that the photoresist layer below the first light-shielding portion and the corresponding area below the second light-shielding portion is removed, or below each of the first light-transmitting portions and the first The photoresist layer in the corresponding area under the two light-transmitting portions is removed, so that part of the substrate is exposed, and the patterned photoresist layer is formed.
  • the photoresist layer is a negative photoresist layer
  • the substrate includes a conductive layer.
  • the photoresist layer under the first light shielding portion and the corresponding area under the second light shielding portion are removed.
  • the material of the conductive layer that is not masked by the photoresist layer is removed, and the remaining material of the conductive layer forms a plurality of the conductive grids.
  • the photoresist layer is a positive photoresist layer.
  • the photoresist layer under each of the first light transmitting portion and the corresponding area under the second light transmitting portion is removed, and
  • a conductive material is provided on the bare substrate to form a plurality of the conductive grids.
  • the base further includes a substrate, the conductive layer is disposed on a surface of the substrate, and the photoresist layer is disposed on a surface of the conductive layer remote from the substrate.
  • the first photomask is disposed near the photoresist layer.
  • a frame lead region including a plurality of frame leads is also formed while the conductive grid is formed.
  • a method for manufacturing a touch screen including a manufacturing process of a sensing film, and the manufacturing process of the sensing film is any one of the manufacturing processes described above.
  • multiple photomasks are used to pattern the photoresist layer at the same time, that is, the superposition of the patterns of multiple photomasks corresponds to the photoresist The pattern of the layer.
  • One of the multiple photomasks is a universal photomask, which can be applied in the process of making conductive grids of different sizes, and the remaining photomasks are auxiliary photomasks. In the process of making conductive grids of different sizes and designs, it is necessary to develop a new auxiliary photomask and a universal photomask to obtain a conductive grid of a predetermined size and design.
  • a high-precision photomask can be selected as a general-purpose photomask. In this way, the pattern size of the auxiliary photomask is large and simple, and it is more simple and efficient to develop it.
  • FIG. 1 is a schematic structural diagram of a first photomask according to the present application
  • FIG. 2 is a structural view of a second photomask used in conjunction with the first photomask of FIG. 1;
  • FIG. 3 illustrates a superimposed pattern formed on the first photomask of FIG. 1 by being projected with the second photomask of FIG. 2;
  • 4 to 8 are schematic structural diagrams during a manufacturing process of an induction film in an embodiment of the present application.
  • 9 to 12 are schematic structural diagrams of a manufacturing process of an induction film in another embodiment of the present application.
  • FIG. 13 is a schematic diagram showing a partial structure of an induction film of the present application.
  • this application proposes a manufacturing process of a sensing film and a manufacturing method of a touch screen.
  • a manufacturing process of an induction film is provided.
  • the induction film includes a conductive grid.
  • the manufacturing process includes:
  • step S1 a substrate 10 is provided, and a photoresist layer 20 is disposed on the substrate 10 to form the structure shown in FIG. 4.
  • the photoresist layer 20 is patterned by using a photomask group, so that a part of the photoresist layer 20 is removed, and a plurality of photoresist portions 21 are formed at intervals, as shown in FIG. 6 or FIG. 10 Nudity.
  • the photomask group includes a plurality of photomasks that are sequentially stacked, and a projection of a light-shielding portion of one photomask of the at least two photomasks on the other photomask and a portion of the light-transmitting portion of the other photomask. Overlapping, as shown in Fig. 5 or Fig.
  • both figures show a photomask group including two photomasks, one of which is a first photomask 30 and the other is a second photomask 40. From these two figures, it can be seen that the projection of the light-shielding portion of the second mask 40 on the first mask 30 overlaps with a part of the light-transmitting portion of the first mask 30. In this way, it is equivalent to the second light
  • the pattern on the cover 40 can be adjusted to the pattern on the first photomask 30, so as to obtain a pattern corresponding to a predetermined pattern of the photoresist layer.
  • “correspondence" herein may represent a predetermined pattern of the photoresist layer
  • the pattern superimposed on the two photomasks is the same or complementary.
  • Step S3. is a step of forming a conductive mesh.
  • This step may have two implementations.
  • One solution is to remove the material of the substrate 10 that is not covered by the photoresist layer 20 to form the conductive mesh 50.
  • the photoresist layer 20 must be disposed on the conductive layer 12, that is, the substrate 10 includes the conductive layer 12, or a conductive layer is disposed on the substrate before the photoresist layer 20 is disposed.
  • Another solution is to provide a conductive material on the exposed surface of the substrate 10 to form the conductive grid 50 as shown in FIG. 11.
  • step S4 the patterned photoresist layer 20 is removed to form a sensing film including a conductive mesh 50, as shown in FIG. 8 or 12.
  • multiple photomasks are used to pattern the photoresist layer simultaneously, that is, the superposition of the patterns of multiple photomasks corresponds to the pattern of the photoresist layer, and multiple light
  • One of the masks is a full-size universal mask (the process supports the largest size), which can be used in the process of making conductive grids of different sizes, and the remaining masks are auxiliary masks.
  • a high-precision photomask can be selected as a general-purpose photomask. In this way, the pattern size of the auxiliary photomask is large and simple, and it is more simple and efficient to develop it.
  • a universal photomask and an auxiliary photomask can be used to achieve the width of the conductive mesh through the general photomask, and because of the conductive mesh
  • the width of the grid is generally small, so the pattern of the universal photomask is more precise, that is, more precise.
  • the length of the conductive grid (different sizes of the pattern of the conductive channel) only needs to change the width and / or length of the auxiliary photomask. As the pattern of the conductive channel is larger, the size of the pattern of the auxiliary photomask is relatively large. Therefore, compared to the redevelop of a photomask that can form a specific size and more precise conductive grid at one time, the development of an auxiliary photomask Simpler, cheaper and more efficient.
  • a universal reticle and an auxiliary reticle can be used.
  • the width of the conductive grid corresponding to the universal reticle is moderate. You can increase or decrease the conductivity by adjusting the width of the auxiliary reticle.
  • the width of the grid because the width of the pattern of the auxiliary mask and the width of the pattern of the general mask are superimposed to obtain the width of the final conductive grid. Therefore, it is relatively developed to develop a conductive grid of a specific size and a more precise one-time width. For photomasks, developing an auxiliary photomask is simpler, its cost is lower, and its efficiency is higher.
  • one universal photomask and two auxiliary photomasks can be used.
  • the two auxiliary photomasks have different patterns. Among them, the pattern of one auxiliary photomask is used to adjust the conductive mesh.
  • the width of the grid and the pattern of another auxiliary photomask are used to adjust the length of the conductive grid.
  • two simple auxiliary photomasks can be re-developed. Compared to developing a photomask that can form a specific size and more precise conductive grid at one time, the process is simpler, the cost is lower, and the efficiency is higher.
  • the photomask group includes two photomasks, which are a first photomask 30 and a second photomask 40, as shown in FIG. 5.
  • the number of photomasks of such a photomask group is small, which makes the implementation process of the production process of the induction film relatively simple and efficient.
  • only one photomask needs to be re-developed in this photomask group, which makes the cost of the production of the photoinduction film low .
  • the first photomask 30 is a universal photomask.
  • the first photomask 30 includes a first light-shielding portion 31 and a plurality of first light-transmitting portions 32.
  • the light-transmitting portions 32 are arranged at intervals.
  • the width of the plurality of first light-transmitting portions 32 corresponds to the width of the conductive grid 50 formed last.
  • the second photomask 40 includes a second light-shielding portion 41 and a second ⁇ ⁇ 42 ⁇ The light transmitting portion 42.
  • step S2 the pattern of the photomask obtained by projecting the second photomask 40 onto the first photomask 30 is shown in FIG. 3, and as shown in FIG.
  • the second light-shielding portion 41 A projection on a mask 30 overlaps a part of the plurality of first light transmitting portions 32, and the overlapping portion is equivalent to cutting the first light transmitting portion, so that a photoresist portion with a small length can be formed, and further formed A conductive grid of a predetermined length.
  • the patterns of the first photomask and the second photomask of the present application are not limited to the above schemes, for example, they may be opposite to the above schemes, for example, the first light-shielding portion and the first light-transmitting portion in the first photomask
  • the light parts are interchangeable, that is, the first light shielding part in FIG. 1 becomes the first light transmitting part, and the first light transmitting part becomes the first light transmitting part; the second light shielding part and the second light transmitting part in the second mask
  • the second light-shielding portion in FIG. 2 becomes a second light-transmitting portion, and the second light-transmitting portion becomes a second light-shielding portion.
  • the photomask group of this scheme and the photomask group of the upper scheme want to form a photoresist layer with the same pattern, the positive and negative of the photoresist used by these two schemes need to be opposite. Of course, it can also be two photomasks with other patterns. Those skilled in the art can select the first photomask and the second photomask with appropriate patterns according to the actual situation, which will not be repeated here.
  • a plurality of the first light transmitting portions 32 are arranged at the same interval.
  • Such a first photomask 30 (universal photomask) can be better applied in the manufacturing process of multiple conductive grids and has good compatibility.
  • each of the second light-shielding portions 41 is a predetermined light-shielding portion 101 and further forms a plurality of conductive meshes with a predetermined length.
  • the step S2 includes: sequentially covering the first photomask 30 and the second photomask 40 on the surface of the photoresist layer 20 remote from the substrate 10 to form FIG. 5 or The structure shown in FIG. 9; exposing the photoresist layer 20 covered with the photomask group; developing the photoresist layer 20 after exposure, so that the first light-shielding portion 31 is below and the second light-shielding portion
  • the photoresist layer 20 in the corresponding area below 41 is removed, as shown in FIG. 6; or the photoresist layer 20 in the corresponding area below each of the first light transmitting portion 32 and the second light transmitting portion 42 is removed.
  • a part of the substrate 10 is exposed to form a patterned photoresist layer 20.
  • this step of removing a part of the photoresist layer specifically whether to remove the photoresist layer below the light shielding portion or the photoresist layer below the light transmitting portion depends on the photoresist in the photoresist layer.
  • Positive and negative when the photoresist is a positive photoresist, that is, the photoresist layer is a positive photoresist layer, in this step, the corresponding photoresist is removed from the area under the two light transmitting parts.
  • Negative photoresist that is, when the photoresist layer is a negative photoresist layer, this size is relatively small, and the photoresist in the area under the two light-shielding portions is removed accordingly.
  • a positive photoresist or a negative photoresist can be selected to form a photoresist layer according to the pattern of the photomask and a specific manufacturing process.
  • the photoresist layer 20 is a negative photoresist layer
  • the substrate 10 includes a conductive layer 12, and in the above step S2, the lower portion of the first light shielding portion 31 and the lower portion of the second light shielding portion 41 correspond to each other.
  • the photoresist layer 20 in the region is all removed.
  • the material of the conductive layer 12 that is not masked by the photoresist layer 20 is removed, and the remaining material of the conductive layer 12 forms a plurality of materials such as The conductive mesh 50 shown in FIG. 7.
  • the performance of the induction film produced by this solution is better and the yield of the induction film is higher.
  • the photoresist layer 20 is a positive photoresist layer.
  • the light in the corresponding area below the first light-transmitting portion 32 and below the second light-transmitting portion 42 is The resist layers 20 are all removed, as shown in FIG. 10, and in the above step S3, a conductive material is disposed on the bare substrate 10, as shown in FIG. 11, to form a plurality of conductive grids 50.
  • a suitable method to set a conductive material may be used to set the conductive material.
  • a chemical vapor deposition method, a physical vapor deposition method, a magnetron sputtering method, or a plating method may be used to set the conductive material.
  • the above-mentioned substrate of the present application needs to include a conductive base layer or be provided on the substrate before the photoresist layer is provided.
  • a conductive base layer (the photoresist layer is disposed on the conductive base layer) to ensure the formation of a conductive grid.
  • the conductive base layer may be removed.
  • the substrate 10 further includes a substrate 11, and the conductive layer 12 is disposed on a surface of the substrate 11.
  • the resist layer 20 is disposed on a surface of the conductive layer 12 remote from the substrate 11.
  • the above substrate may be formed of any available insulating material.
  • the material of the substrate may be selected from insulating materials such as ordinary glass, PET, PE, or PB. Those skilled in the art may select a suitable material for forming according to actual conditions. Substrate.
  • the conductive grid of the present application may be a grid formed of any conductive material, and those skilled in the art may select a suitable conductive material to form the conductive grid of the present application according to actual conditions.
  • the first photomask is a universal photomask, and the size of the pattern thereon is small.
  • the size of the pattern of the formed photoresist layer is slightly different from this size, which will lead to more serious consequences. Try to make the corresponding size of the finally formed pattern close to the corresponding size of the pattern on the first photomask.
  • the first photomask 30 is close to the photoresist layer. 20, that is, closer to the photoresist layer 20 than the second photomask 40.
  • the conductive grid 50 is formed and a frame lead region 60 including a plurality of frame leads is also formed, such as As shown in FIG. 13, that is to say, the superposition of the patterns of the photomask group can not only form the conductive grid of the sensing area in the sensing film, but also form the frame leads of the frame lead area 60 in the sensing film. High, the grid needs to be dense enough.
  • the frame lead in the induction film may not be formed at the same time as the conductive grid.
  • a silver paste may be printed in a post-process and then laser-processed. Flexible design of the area of the line and the bonding area, so that the sensing film achieves great flexibility and versatility.
  • a manufacturing method of a touch screen includes a manufacturing process of a sensing film, and the manufacturing process of the conductive grid is any of the manufacturing processes described above.
  • the manufacturing method includes the above-mentioned manufacturing process of the induction film, the cost is low and the efficiency is high.
  • the manufacturing process of the induction film includes:
  • a substrate 10 is provided.
  • the substrate 10 includes a substrate and a conductive layer 12 disposed on the substrate 11.
  • a photoresist layer 20 is disposed on the substrate 10 to form the structure shown in FIG. 4.
  • the photoresist layer is A negative photoresist layer formed by a negative photoresist.
  • step S2 the photoresist layer 20 is patterned by using a photomask group, so that part of the photoresist layer 20 is removed, and a plurality of photoresist portions 21 are formed at intervals, so that part of the substrate 10 is exposed, as shown in FIG.
  • the first photomask 30 and the second photomask 40 are sequentially covered on the surface of the photoresist layer 20 remote from the substrate 10 to form the structure shown in FIG. 5.
  • the first photomask 30 includes a first light-shielding portion 31 and a plurality of first light-transmitting portions 32 arranged at the same interval.
  • the widths of the plurality of first light-transmitting portions 32 correspond to the width of the conductive grid that is finally formed, such as
  • the second photomask 40 includes a plurality of second light-shielding portions 41 and a plurality of second light-transmitting portions 42. After the two photomasks are fixed, each of the second light-shielding portions 41 is exposed to the first light.
  • the projection on the cover 30 overlaps a part of the plurality of first light transmitting portions 32 described above;
  • the resist layer 20 is removed, as shown in FIG. 6, so that a part of the substrate 10 is exposed to form the patterned photoresist layer 20.
  • step S3 the material of the conductive layer 12 that is not masked by the photoresist layer 20 is removed, and the remaining material of the conductive layer 12 forms a plurality of the conductive grids 50 as shown in FIG.
  • step S4 the patterned photoresist layer 20 is removed to form a sensing film including a conductive grid, as shown in FIG. 8.
  • the manufacturing process of the induction film includes:
  • step S1 a substrate 10 is provided, and a photoresist layer 20 is provided on the substrate 10.
  • the photoresist layer is a positive photoresist layer formed by a positive photoresist.
  • step S2 the photoresist layer 20 is patterned by using a photomask group, so that a part of the photoresist layer 20 is removed, and a plurality of photoresist sections 21 are formed at intervals, so that a part of the substrate 10 is exposed, as shown in FIG.
  • the first photomask 30 and the second photomask 40 are sequentially covered on the surface of the photoresist layer 20 remote from the substrate 10 to form the structure shown in FIG. 9.
  • the above-mentioned first photomask 30 includes a first light-shielding portion 31 and a plurality of first light-transmitting portions 32 arranged at the same interval.
  • the width of the plurality of first light-transmitting portions corresponds to the width of the conductive grid that is finally formed.
  • the second photomask 40 includes a plurality of second light-shielding portions 41 and a plurality of second light-transmitting portions 42. After fixing the two photomasks, each of the second light-shielding portions 41 is in the first photomask.
  • the projection on 30 overlaps a part of the plurality of first light transmitting portions 32;
  • the photoresist layer 20 is removed, as shown in FIG. 10, so that a part of the substrate 10 is exposed to form the patterned photoresist layer 20.
  • step S3 a conductive material is provided on the bare substrate 10, as shown in FIG. 11, a plurality of the above-mentioned conductive grids 50 are formed, and the conductive grid 50 of FIG. 11 is formed.
  • step S4 the patterned photoresist layer 20 is removed to form a sensing film including a conductive grid, as shown in FIG. 12.
  • the manufacturing process greatly saves the cost of developing the photomask, improves the specification compatibility of the photomask, and the manufactured sensing film has better performance and higher yield.
  • a plurality of photomasks are used to pattern the photoresist layer simultaneously, that is, the superposition of the patterns of multiple photomasks corresponds to the pattern of the photoresist layer
  • One of the multiple photomasks is a universal photomask, which can be used in the process of making conductive grids of different sizes, and the remaining photomasks are auxiliary photomasks. In the process of making conductive grids of different sizes and designs, it is necessary to develop a new auxiliary photomask and a universal photomask to obtain a conductive grid of a predetermined size and design.
  • a high-precision photomask can be selected as a general-purpose photomask. In this way, the pattern size of the auxiliary photomask is large and simple, and it is more simple and efficient to develop it.
  • the manufacturing method of the sensing film of the present application includes the manufacturing method of the sensing film described above, which has lower cost and higher efficiency.

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Abstract

本申请提供了一种感应膜的制作工艺和触摸屏的制作方法。该制作工艺包括：步骤S1，提供基底，并在基底上设置光阻层；步骤S2，采用光罩组对光阻层进行图案化，光罩组包括依次叠置的多个光罩，且至少两个光罩中的一个光罩的遮光部在另一个光罩上的投影与另一个光罩的透光部的一部分重叠；步骤S3，去除没有光阻层掩蔽的部分基底的材料，形成导电网格；或者在裸露的基底的表面上设置导电材料，形成导电网格；步骤S4，去除图案化的光阻层。该制作工艺需要开发新的辅助光罩，相对于重新开发一个可以一次性形成特定尺寸的导电网格的光罩来说，该工艺更简单，其成本更低，且效率更高。

Description

感应膜的制作工艺和触摸屏的制作方法 技术领域
本申请涉及触摸屏领域，具体而言，涉及一种感应膜的制作工艺和触摸屏的制作方法。
背景技术
目前，触摸屏的感应膜中的金属网格的制作方法主要包括黄光法、压印法、丝印法以及打印法。
其中，黄光法主要应用于铜、镍、银等纯金属的金属网格的制作，该种方法的优点是：制作得到的金属网格的性能及外观效果最佳；缺点是：光罩无法通用，每个不同尺寸设计的金属网格都需单独对应的光罩，但是，制造光罩周期长，费用昂贵，不利于生产调动及产线设备利用率提升。该方法局限于光罩开模费用高昂，导致推广受阻。
压印法主要应用于银浆等混合导电物的金属网格的制作，该种方法的优点是：制作得到的金属网格的性能及外观效果最佳；缺点是：压印模具无法通用，需专用设计开模，费用昂贵，模具制造周期长，影响制造效率及开案日程以及时效。该种方法局限于开模费用昂贵，导致推广受阻。
丝印法主要应用于银浆等混合导电物的金属网格的制作，打印法主要应用于混合导电物以及漆包线的金属网格的制作。这两种方法的缺点是：线径粗糙，效果较次，外观隐藏性差，仅限于市场小部分低端应用，无法应用于高阶主流应用。
综上所述，目前效果最优的金属网格制作方法当属黄光制程类及压印类为优，其中，黄光法类效果最佳，市场最为主流采用，但光罩的开发费用极其昂贵。
在背景技术部分中公开的以上信息只是用来加强对本文所描述技术的背景技术的理解，因此，背景技术中可能包含某些信息，这些信息对于本领域技术人员来说并未形成在本国已知的现有技术。
发明内容
本申请的主要目的在于提供一种感应膜的制作工艺和触摸屏的制作方法，以解决现有技术中黄光法针对不同尺寸的金属网格，需要单独开发昂贵的光罩的问题。
为了实现上述目的，根据本申请的一个方面，提供了一种感应膜的制作工艺，上述感应膜包括导电网格，该制作工艺包括：步骤S1，提供基底，并在上述基底上设置光阻层；步骤S2，采用光罩组对上述光阻层进行图案化，上述光罩组包括依次叠置的多个光罩，且至少两个上述光罩中的一个上述光罩的遮光部在另一个上述光罩上的投影与另一个上述光罩的透光部的一部分重叠；步骤S3，去除没有上述光阻层掩蔽的部分上述基底的材料，形成上述导电 网格；或者在裸露的上述基底的表面上设置导电材料，形成上述导电网格；步骤S4，去除图案化的上述光阻层。
进一步地，上述光罩组包括两个上述光罩，分别为第一光罩和第二光罩。
进一步地，上述第一光罩包括一个第一遮光部和多个第一透光部，多个上述第一透光部依次间隔排列，上述第二光罩包括第二遮光部和第二透光部，在上述步骤S2中，上述第二遮光部在上述第一光罩上的投影与多个上述第一透光部的一部分均重叠。
进一步地，多个上述第一透光部相同且等间隔排列。
进一步地，上述第二遮光部有多个，且多个上述第二遮光部间隔排列，各上述第二遮光部在上述第一光罩上的投影与多个上述第一透光部的一部分均重叠。
进一步地，上述步骤S2包括：在上述光阻层的远离上述基底的表面上依次罩设上述第一光罩和上述第二光罩；对罩设有上述光罩组的上述光阻层进行曝光；对曝光后的上述光阻层进行显影，使得上述第一遮光部下方以及上述第二遮光部下方对应区域的上述光阻层均被去除，或者使得各上述第一透光部下方以及上述第二透光部下方对应区域的上述光阻层均被去除，使得部分上述基底裸露，形成图案化后的上述光阻层。
进一步地，上述光阻层为负性光阻层，上述基底包括导电层，在上述步骤S2中，上述第一遮光部下方以及上述第二遮光部下方对应区域的上述光阻层均被去除，在上述步骤S3中，去除没有上述光阻层掩蔽的上述导电层的材料，剩余的上述导电层的材料形成多个上述导电网格。
进一步地，上述光阻层为正性光阻层，在上述步骤S2中，各上述第一透光部下方以及上述第二透光部下方对应区域的上述光阻层均被去除，且在上述步骤S3中，在裸露的上述基底上设置导电材料，形成多个上述导电网格。
进一步地，上述基底还包括衬底，上述导电层设置在上述衬底的表面上，上述光阻层设置在上述导电层的远离上述衬底的表面上。
进一步地，在上述步骤S2中，上述第一光罩靠近上述光阻层设置。
进一步地，在上述步骤S3中，形成上述导电网格的同时还形成了包括多个边框引线的边框引线区。
根据本申请的另一方面，提供了一种触摸屏的制作方法，包括感应膜的制作工艺，该感应膜的制作工艺为任一种上述的制作工艺。
应用本申请的技术方案，上述的包括导电网格的感应膜的制作工艺中，采用多个光罩同时对光阻层进行图案化，也就是说，多个光罩的图案的叠加对应光阻层的图案，多个光罩中的一个为通用光罩，可以应用在制作不同尺寸的导电网格的工艺中，其余的光罩为辅助光罩。在制作不同尺寸和设计的导电网格的工艺中，需要开发新的辅助光罩与通用光罩配合得到预定尺寸和设计的导电网格。相对于重新开发一个可以一次性形成特定尺寸的导电网格的光罩 来说，开发新的辅助光罩的工艺更简单，其成本更低，且效率更高。并且，在实际的制作过程中，可以选择高精密的光罩作为通用光罩，这样辅助光罩的图案尺寸较大且较简单，开发其就更加简单高效了。
附图说明
构成本申请的一部分的说明书附图用来提供对本申请的进一步理解，本申请的示意性实施例及其说明用于解释本申请，并不构成对本申请的不当限定。在附图中：
图1示出了本申请的一种第一光罩的结构示意图；
图2示出与图1的第一光罩配合使用的第二光罩的结构意图；
图3示出与图2的第二光罩投影在图1的第一光罩上形成的叠加图案；
图4至图8示出了本申请的一种实施例中的感应膜的制作工艺过程中的结构示意图；
图9至图12示出了本申请的另一种实施例中的感应膜的制作工艺过程中的结构示意图；以及
图13示出本申请的一种感应膜的局部结构示意图。
其中，上述附图包括以下附图标记：
10、基底；20、光阻层；30、第一光罩；40、第二光罩；11、衬底；12、导电层；21、光阻部；31、第一遮光部；32、第一透光部；41、第二遮光部；42、第二透光部；50、导电网格；60、边框引线区；101、预定遮光部；102、预定透光部。
具体实施方式
应该指出，以下详细说明都是例示性的，旨在对本申请提供进一步的说明。除非另有指明，本文使用的所有技术和科学术语具有与本申请所属技术领域的普通技术人员通常理解的相同含义。
需要注意的是，这里所使用的术语仅是为了描述具体实施方式，而非意图限制根据本申请的示例性实施方式。如在这里所使用的，除非上下文另外明确指出，否则单数形式也意图包括复数形式，此外，还应当理解的是，当在本说明书中使用术语“包含”和/或“包括”时，其指明存在特征、步骤、操作、器件、组件和/或它们的组合。
应该理解的是，当元件(诸如层、膜、区域、或衬底)描述为在另一元件“上”时，该元件可直接在该另一元件上，或者也可存在中间元件。而且，在说明书以及权利要求书中，当描述有元件“连接”至另一元件时，该元件可“直接连接”至该另一元件，或者通过第三元件“连接”至该另一元件。
正如背景技术所介绍的，现有技术中，黄光法针对不同尺寸的金属网格，需要单独开发对应的光罩，该光罩的图案较精细，开发成本较高，开发效率较低，为了解决如上的技术问题，本申请提出了一种感应膜的制作工艺和触摸屏的制作方法。
本申请的一种典型的实施方式中，提供了一种感应膜的制作工艺，该感应膜包括导电网格，该制作工艺包括：
步骤S1，提供基底10，并在上述基底10上设置光阻层20，形成图4所示的结构。
步骤S2，采用光罩组对上述光阻层20进行图案化，使得部分光阻层20被去除，形成间隔设置的多个光阻部21，如图6或图10所示，进而使得部分基底10裸露。上述光罩组包括依次叠置的多个光罩，且至少两个上述光罩中的一个光罩的遮光部在另一个上述光罩上的投影与另一个上述光罩的透光部的一部分重叠，如图5或图9所示，这两个图中均示出了包括两个光罩的光罩组，这两个光罩一个为第一光罩30，另外一个为第二光罩40，从这两个图中可以看出，第二光罩40的遮光部在第一光罩30上的投影与第一光罩30的透光部的一部分重叠，这样，相当于第二光罩40上的图案可以对第一光罩30上的图案进行调整，从而调整得到与光阻层的预定图案对应的图案，需要说明的是，这里的“对应”可以表示光阻层的预定图案与两个光罩后叠加的图案是相同的，也可以是互补的。
步骤S3，该步骤为形成导电网格的步骤，该步骤可以有两种实施方案：一种方案是，去除没有上述光阻层20掩蔽的部分上述基底10的材料，形成上述导电网格50，如图7所示，这种方案中，光阻层20必须设置在导电层12上，也就是说该基底10包括导电层12，或者在设置光阻层20之前，在基底上设置一个导电层；另一种方案是，在裸露的上述基底10的表面上设置导电材料，形成上述导电网格50，如图11所示。
步骤S4，去除图案化的上述光阻层20，形成包括导电网格50的感应膜，如图8或图12所示。
上述的包括导电网格的感应膜的制作工艺中，采用多个光罩同时对光阻层进行图案化，也就是说，多个光罩的图案的叠加对应光阻层的图案，多个光罩中的一个为全尺寸(制程支持最大尺寸)的通用光罩，可以应用在制作不同尺寸的导电网格的工艺中，其余的光罩为辅助光罩。在制作不同尺寸和设计的导电网格的工艺中，需要开发新的辅助光罩与通用光罩配合得到预定尺寸和设计的导电网格。相对于重新开发一个可以一次性形成特定尺寸的导电网格的光罩来说，开发新的辅助光罩的工艺更简单，其成本更低，且效率更高。并且，在实际的制作过程中，可以选择高精密的光罩作为通用光罩，这样辅助光罩的图案尺寸较大且较简单，开发其就更加简单高效了。
对于不同长度的导电网格来说，即对于不同尺寸的导电通道的图案来说，可以采用一个通用光罩和一个辅助光罩实现，导电网格的宽度通过通用光罩实现，并且由于导电网格的宽度一般较小，所以该通用光罩的图案的较精密，即较精密，导电网格的长度的不同(导电通道的图案的不同尺寸)只需要更改辅助光罩的宽度和/或长度，由于导电通道的图案较大，辅助 光罩的图案的尺寸相对较大，所以，相对于重新开发一个可以一次性形成特定尺寸且较精密的导电网格的光罩来说，开发辅助光罩更简单，其成本更低，且效率更高。
对于不同宽度的导电网格来说，可以采用一个通用光罩和一个辅助光罩实现，通用光罩对应形成的导电网格的宽度适中，通过调整辅助光罩的宽度来增大或者减小导电网格的宽度，由于辅助光罩的图案的宽度和通用光罩的图案的宽度叠加得到最后的导电网格的宽度，所以，相对开发一个可以一次性形成特定尺寸且较精密的导电网格的光罩来说，开发辅助光罩更简单，其成本更低，且效率更高。
对于不同宽度和长度的导电网格来说，可以采用一个通用光罩和两个辅助光罩实现，这两个辅助光罩的图案不同，其中，一个辅助光罩的图案是用来调整导电网格的宽度的，另一个辅助光罩的图案是用来调整导电网格的长度的，当待制作的导电网格的宽度和长度均不同时，可以重新开发两个简单的辅助光罩，这相对于开发一个可以一次性形成特定尺寸且较精密的导电网格的光罩来说，工艺更简单，成本更低，效率更高。
本申请的一种具体的实施例中，上述光罩组包括两个光罩，分别为第一光罩30和第二光罩40，如图5所示。这样的光罩组的光罩的数量较少，使得感应膜的制作工艺的实施过程相对简单高效，同时，这样的光罩组中只需要重新开发一个光罩，使得感应膜的制作成本较低。
如图1所示，一种实施例中，第一光罩30为通用光罩，上述第一光罩30包括一个第一遮光部31和多个第一透光部32，多个上述第一透光部32依次间隔排列，多个第一透光部32的宽度对应最后形成的导电网格50的宽度，如图2所示，上述第二光罩40包括第二遮光部41和第二透光部42。在步骤S2中，将第二光罩40投影到第一光罩30上得到的光罩的图案为图3，如图3所示，在上述步骤S2中，上述第二遮光部41在上述第一光罩30上的投影与多个上述第一透光部32的一部分均重叠，重叠的这部分相当于将第一透光部切割开，从而可以形成长度较小的光阻部，进而形成预定长度的导电网格。
当然，本申请的第一光罩和第二光罩的图案并不限于上述的方案，例如，还可以与上述方案中的相反，例如，第一光罩中的第一遮光部和第一透光部互换，即图1中的第一遮光部变为第一透光部，第一透光部变为第一遮光部；第二光罩中的第二遮光部和第二透光部也互换，即图2中的第二遮光部变为第二透光部，第二透光部变为第二遮光部。该段方案的光罩组与上段方案的光罩组若想形成同样图案的光阻层，这两个方案采用的光阻的正负性需要相反。当然，还可以是其他图案的两个光罩，本领域技术人员可以根据实际情况选择具有合适图案的第一光罩和第二光罩，此处就不再赘述了。
本申请的一种实施例中，如图1所示，多个上述第一透光部32相同且等间隔排列。这样的第一光罩30(通用光罩)可以更好地应用于多个导电网格的制作工艺过程中，具有很好的兼容性。
如图2所示，上述第二遮光部41有多个，且多个上述第二遮光部41间隔排列，各上述第二遮光部41在上述第一光罩30上的投影与多个上述第一透光部32的一部分均重叠，如图3 所示，这相当于将多个第一透光部32切割成多段，从而可以形成多个长度较小的光阻部，称为预定透光部102，遮光的部分为预定遮光部101，进而形成多个预定长度的导电网格。
本申请的另一种实施例中，上述步骤S2包括：在上述光阻层20的远离上述基底10的表面上依次罩设上述第一光罩30和上述第二光罩40，形成图5或者图9所示的结构；对罩设有上述光罩组的上述光阻层20进行曝光；对曝光后的上述光阻层20进行显影，使得上述第一遮光部31下方以及上述第二遮光部41下方对应区域的上述光阻层20均被去除，如图6所示；或者使得各上述第一透光部32下方以及上述第二透光部42下方对应区域的上述光阻层20均被去除，如图10所示，从而使得部分上述基底10裸露，形成图案化后的上述光阻层20。
需要说明的是，上述方法中，在去除部分光阻层的这一步骤中，具体是去除遮光部下方的光阻层还是去除透光部下方的光阻层，取决于光阻层中光阻的正负性，当光阻为正性光阻，即光阻层为正性光阻层时，这一步骤中，对应去除的就是两个透光部下方区域的光阻，当光阻为负性光阻，即光阻层为负性光阻层时，这一尺寸较小中，对应去除的就是两个遮光部下方区域的光阻。实际操作过程中，可以根据光罩的图案以及具体的制作流程来选择正性光阻或者负性光阻形成光阻层。
一种具体的实施例中，上述光阻层20为负性光阻层，上述基底10包括导电层12，在上述步骤S2中，上述第一遮光部31下方以及上述第二遮光部41下方对应区域的上述光阻层20均被去除，如图6所示，上述步骤S3中，去除没有上述光阻层20掩蔽的上述导电层12的材料，剩余的上述导电层12的材料形成多个如图7所示的上述导电网格50。该方案制作得到的感应膜的性能较好且感应膜的良率较高。
当然，如果想将上段方案中的负性光阻替换为正性光阻，则需要同时更换光罩组的图案，将各个光罩的遮光部与透光部互换即可。该方案可能没有上述方案的良率高。
另一种具体的实施例中，上述光阻层20为正性光阻层，在上述步骤S2中，各上述第一透光部32下方以及上述第二透光部42下方对应区域的上述光阻层20均被去除，如图10所示，且在上述步骤S3中，在裸露的上述基底10上设置导电材料，如图11所示，形成多个导电网格50。
同样地，如果想将上段方案中的正性光阻替换为负性光阻，则需要同时更换光罩组的图案，将各个光罩的遮光部与透光部互换即可。该方案可能没有上述方案的良率高。
上述的步骤S3中设置导电材料的方法有很多，本领域技术人员可以根据实际情况选择合适的方法设置导电材料，以形成导电网格。比如，可以采用化学气相沉积法、物理气相沉积法、磁控溅射法或者电镀法设置导电材料。
需要注意的是，当采用电镀法设置导电材料时，由于导电材料只能镀设在导电材料上，所以，本申请的上述基底需要包括导电基层或者在设置光阻层之前，需要在基底上设置导电基层(光阻层设置在导电基层上)，以保证导电网格的形成。并且，为了方便后续感应膜的应用，可以将该导电基层去除。
为了方便工艺的制作，且保证导电网格具有良好的性能，本申请的一种实施例中，上述基底10还包括衬底11，上述导电层12设置在上述衬底11的表面上，上述光阻层20设置在上述导电层12的远离上述衬底11的表面上。
上述的衬底可以是任何一种可用的绝缘材料形成的，具体地，衬底的材料可以选自普通玻璃，PET、PE或者PB等绝缘材料，本领域技术人员可以根据实际情况选择合适材料形成的衬底。
本申请的导电网格可以是任何导电材料形成的网格，本领域技术人员可以根据实际情况选择合适的导电材料形成本申请的导电网格。
由于曝光时，光经过光罩的基材时会产生折射效应，进而会影响光阻层的图案的尺寸，光罩与光阻层的距离越小，对应的折射效应带来的尺寸的影响越小。而对于上述实施例中，第一光罩为通用光罩，其上的图案的尺寸较小，形成的光阻层的图案的尺寸与该尺寸稍有偏差，就会导致比较严重的后果，为了尽量使得最终形成的图案的对应尺寸与第一光罩上的图案的对应尺寸接近，一种具体的实施例中，如图5与图9所示，上述第一光罩30靠近上述光阻层20设置，即相比第二光罩40更加靠近光阻层20。
为了简化工艺步骤，提高感应膜的制作效率，本申请的一种实施例中，在上述步骤S3中，形成上述导电网格50的同时还形成了包括多个边框引线的边框引线区60，如图13所示，也就是说，光罩组的图案的叠加不仅可以形成感应膜中感应区的导电网格，还可以形成感应膜中的边框引线区60的边框引线，这光罩的要求较高，需要网格足够密集。
当然，感应膜中的边框引线也可以不与导电网格同时形成，例如，也可选用后制程加印银胶的方式，再镭射加工。灵活设计出线的区域及bonding的区域，使感应膜达到极大的灵活性及通用性。
本申请的另一种典型的实施方式中，提供了一种触摸屏的制作方法，该制作方法包括感应膜的制作工艺，该导电网格的制作过程为上述任一种的制作工艺。
该制作方法由于包括上述的感应膜的制作工艺，其成本较低，效率较高。
为了使得本领域技术人员能够更加清楚地了解本申请的技术方案，以下将结合具体的实施例来说明本申请的技术方案。
实施例1
感应膜的制作工艺包括：
步骤S1，提供基底10，该基底10包括衬底和设置在衬底11上的导电层12，并在上述基底10上设置光阻层20，形成图4所示的结构，该光阻层为负性光阻形成的负性光阻层。
步骤S2，采用光罩组对上述光阻层20进行图案化，使得部分光阻层20被去除，形成间隔设置的多个光阻部21，进而使得部分基底10裸露，如图6所示。
具体地，在上述光阻层20的远离上述基底10的表面上依次罩设上述第一光罩30和上述第二光罩40，形成图5所示的结构，其中，如图1所示，上述第一光罩30包括一个第一遮光部31和多个相同且等间隔设置的第一透光部32，多个第一透光部32的宽度对应最后形成的导电网格的宽度，如图2所示，上述第二光罩40包括多个第二遮光部41和多个第二透光部42，且固定好两个光罩后，各上述第二遮光部41在上述第一光罩30上的投影与多个上述第一透光部32的一部分均重叠；
对罩设有上述光罩组的上述光阻层20进行曝光；对曝光后的上述光阻层20进行显影，使得上述第一遮光部31下方以及上述第二遮光部41下方对应区域的上述光阻层20均被去除，如图6所示，从而使得部分上述基底10裸露，形成图案化后的上述光阻层20。
步骤S3，去除没有上述光阻层20掩蔽的上述导电层12的材料，剩余的上述导电层12的材料形成多个如图7所示的上述导电网格50。
步骤S4，去除图案化的上述光阻层20，形成包括导电网格的感应膜，如图8所示。
实施例2
感应膜的制作工艺包括：
步骤S1，提供基底10，并在上述基底10上设置光阻层20，如图9所示，该光阻层为正性光阻形成的正性光阻层。
步骤S2，采用光罩组对上述光阻层20进行图案化，使得部分光阻层20被去除，形成间隔设置的多个光阻部21，进而使得部分基底10裸露，如图10所示。
具体地，在上述光阻层20的远离上述基底10的表面上依次罩设上述第一光罩30和上述第二光罩40，形成图9所示的结构，其中，如图1所示，上述第一光罩30包括一个第一遮光部31和多个相同且等间隔设置的第一透光部32，多个第一透光部的宽度对应最后形成的导电网格的宽度，如图2所示，上述第二光罩40包括多个第二遮光部41和多个第二透光部42，且固定好两个光罩后，各上述第二遮光部41在上述第一光罩30上的投影与多个上述第一透光部32的一部分均重叠；
对罩设有上述光罩组的上述光阻层20进行曝光；对曝光后的上述光阻层20进行显影，使得上述第一透光部32下方以及上述第二透光部42下方对应区域的上述光阻层20均被去除，如图10所示，从而使得部分上述基底10裸露，形成图案化后的上述光阻层20。
步骤S3，在裸露的上述基底10上设置导电材料，如图11所示，形成多个上述导电网格50，形成图11导电网格50。
步骤S4，去除图案化的上述光阻层20，形成包括导电网格的感应膜，如图12所示。
当制作具有不同长度的导电网格时，只需要重新开发第二光罩，从而在不同位置处对光阻层进行切割，形成不同长度的导电网格。
该制作工艺大大节省了开发光罩的成本，提高了光罩的规格兼容性，并且制作得到的感应膜的性能较好且良率较高。
从以上的描述中，可以看出，本申请上述的实施例实现了如下技术效果：
1)、本申请的包括导电网格的感应膜的制作工艺中，采用多个光罩同时对光阻层进行图案化，也就是说，多个光罩的图案的叠加对应光阻层的图案，多个光罩中的一个为通用光罩，可以应用在制作不同尺寸的导电网格的工艺中，其余的光罩为辅助光罩。在制作不同尺寸和设计的导电网格的工艺中，需要开发新的辅助光罩与通用光罩配合得到预定尺寸和设计的导电网格。相对于重新开发一个可以一次性形成特定尺寸的导电网格的光罩来说，开发新的辅助光罩的工艺更简单，其成本更低，且效率更高。并且，在实际的制作过程中，可以选择高精密的光罩作为通用光罩，这样辅助光罩的图案尺寸较大且较简单，开发其就更加简单高效了。
2)、本申请的感应膜的制作方法由于包括上述的感应膜的制作方法，其成本较低，效率较高。
以上所述仅为本申请的优选实施例而已，并不用于限制本申请，对于本领域的技术人员来说，本申请可以有各种更改和变化。凡在本申请的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本申请的保护范围之内。

Claims (12)

  1. 一种感应膜的制作工艺，所述感应膜包括导电网格(50)，其特征在于，所述制作工艺包括：
    步骤S1，提供基底(10)，并在所述基底(10)上设置光阻层(20)；
    步骤S2，采用光罩组对所述光阻层(20)进行图案化，所述光罩组包括依次叠置的多个光罩，且至少两个所述光罩中的一个所述光罩的遮光部在另一个所述光罩上的投影与另一个所述光罩的透光部的一部分重叠；
    步骤S3，去除没有所述光阻层(20)掩蔽的部分所述基底(10)的材料，形成所述导电网格(50)；或者在裸露的所述基底(10)的表面上设置导电材料，形成所述导电网格(50)；以及
    步骤S4，去除图案化的所述光阻层(20)。
  2. 根据权利要求1所述的制作工艺，其特征在于，所述光罩组包括两个所述光罩，分别为第一光罩(30)和第二光罩(40)。
  3. 根据权利要求2所述的制作工艺，其特征在于，所述第一光罩(30)包括一个第一遮光部(31)和多个第一透光部(32)，多个所述第一透光部(32)依次间隔排列，所述第二光罩(40)包括第二遮光部(41)和第二透光部(42)，在所述步骤S2中，所述第二遮光部(41)在所述第一光罩(30)上的投影与多个所述第一透光部(32)的一部分均重叠。
  4. 根据权利要求3所述的制作工艺，其特征在于，多个所述第一透光部(32)相同且等间隔排列。
  5. 根据权利要求3所述的制作工艺，其特征在于，所述第二遮光部(41)有多个，且多个所述第二遮光部(41)间隔排列，各所述第二遮光部(41)在所述第一光罩(30)上的投影与多个所述第一透光部(32)的一部分均重叠。
  6. 根据权利要求3所述的制作工艺，其特征在于，所述步骤S2包括：
    在所述光阻层(20)的远离所述基底(10)的表面上依次罩设所述第一光罩(30)和所述第二光罩(40)；
    对罩设有所述光罩组的所述光阻层(20)进行曝光；以及
    对曝光后的所述光阻层(20)进行显影，使得所述第一遮光部(31)下方以及所述第二遮光部(41)下方对应区域的所述光阻层(20)均被去除，或者使得各所述第一透光部(32)下方以及所述第二透光部(42)下方对应区域的所述光阻层(20)均被去除，使得部分所述基底(10)裸露，形成图案化后的所述光阻层(20)。
  7. 根据权利要求6所述的制作工艺，其特征在于，所述光阻层(20)为负性光阻层，所述基底(10)包括导电层(12)，在所述步骤S2中，所述第一遮光部(31)下方以及所述 第二遮光部(41)下方对应区域的所述光阻层(20)均被去除，在所述步骤S3中，去除没有所述光阻层(20)掩蔽的所述导电层(12)的材料，剩余的所述导电层(12)的材料形成多个所述导电网格(50)。
  8. 根据权利要求6所述的制作工艺，其特征在于，所述光阻层(20)为正性光阻层，在所述步骤S2中，各所述第一透光部(32)下方以及所述第二透光部(42)下方对应区域的所述光阻层(20)均被去除，且在所述步骤S3中，在裸露的所述基底(10)上设置导电材料，形成多个所述导电网格(50)。
  9. 根据权利要求7所述的制作工艺，其特征在于，所述基底(10)还包括衬底(11)，所述导电层(12)设置在所述衬底(11)的表面上，所述光阻层(20)设置在所述导电层(12)的远离所述衬底(11)的表面上。
  10. 根据权利要求2所述的制作工艺，其特征在于，在所述步骤S2中，所述第一光罩(30)靠近所述光阻层(20)设置。
  11. 根据权利要求1所述的制作工艺，其特征在于，在所述步骤S3中，形成所述导电网格(50)的同时还形成了包括多个边框引线的边框引线区(60)。
  12. 一种触摸屏的制作方法，包括感应膜的制作工艺，其特征在于，所述感应膜的制作工艺为所述权利要求1至11中任一项所述的制作工艺。
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