WO2019244950A1 - 半導体装置及び半導体装置の製造方法 - Google Patents

半導体装置及び半導体装置の製造方法 Download PDF

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Publication number
WO2019244950A1
WO2019244950A1 PCT/JP2019/024363 JP2019024363W WO2019244950A1 WO 2019244950 A1 WO2019244950 A1 WO 2019244950A1 JP 2019024363 W JP2019024363 W JP 2019024363W WO 2019244950 A1 WO2019244950 A1 WO 2019244950A1
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Prior art keywords
conductive
semiconductor device
heat conductive
conductive sheet
sheet
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PCT/JP2019/024363
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English (en)
French (fr)
Japanese (ja)
Inventor
セルゲイ ボロトフ
佑介 久保
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Dexerials Corp
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Dexerials Corp
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Priority to KR1020207036260A priority Critical patent/KR102432180B1/ko
Priority to US16/973,765 priority patent/US11329005B2/en
Priority to CN201980036901.7A priority patent/CN112236857A/zh
Publication of WO2019244950A1 publication Critical patent/WO2019244950A1/ja
Anticipated expiration legal-status Critical
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    • H10W40/70—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00—Screening of apparatus or components against electric or magnetic fields
    • H10W40/22—
    • H10W40/251—
    • H10W40/255—
    • H10W40/258—
    • H10W42/20—
    • H10W42/60—
    • H10W70/02—
    • H10W72/073—
    • H10W99/00—
    • H10W40/25—
    • H10W40/259—

Definitions

  • the present invention relates to a semiconductor device having excellent heat dissipation properties and an electromagnetic wave suppressing effect, and a method for manufacturing a semiconductor device.
  • a heat sink, a heat pipe, a heat sink, and the like made of a metal material having high thermal conductivity such as copper and aluminum are widely used.
  • These heat radiating components having excellent thermal conductivity are arranged close to electronic components, such as semiconductor packages, which are heat generating portions in the electronic device, in order to achieve a heat radiating effect or reduce the temperature inside the device. Further, these heat radiating components having excellent thermal conductivity are arranged from the electronic components, which are the heat generating parts, to a low temperature place.
  • the heat generating portion in the electronic device is an electronic component such as a semiconductor element having a high current density, and a high current density may be due to a large electric field strength or magnetic field strength that can be a component of unnecessary radiation.
  • a heat-dissipating component made of metal is arranged near an electronic component, there is a problem that heat is absorbed and harmonic components of an electric signal flowing through the electronic component are also picked up.
  • the heat radiation component is made of a metal material, so that the heat radiation component itself functions as an antenna of a harmonic component or functions as a transmission path of a harmonic noise component.
  • Patent Literature 1 discloses that a semiconductor package having a lid mounted therein is provided in a shield member having a large opening, and an annular lid contact portion that electrically contacts a peripheral portion of an upper surface of the lid is provided. A technique of electrically connecting a shield member has been disclosed.
  • Patent Document 1 although a certain heat radiation property and an electromagnetic wave suppressing effect can be obtained, it is considered that when the substrate and the cooling member are large, electromagnetic resonance occurs and a sufficient electromagnetic wave suppressing effect cannot be obtained. Was. Further, with respect to heat dissipation, further improvement has been desired.
  • the present invention has been made in view of such circumstances, and has as its object to provide a semiconductor device having excellent heat dissipation properties and an effect of suppressing electromagnetic waves.
  • the present inventors have repeatedly studied to solve the above problem, and have noticed that a high electromagnetic wave suppressing effect can be obtained by providing a conductive shield can connected to the ground so as to cover the semiconductor element.
  • a conductive heat conductive sheet is formed between the semiconductor element and the conductive cooling member. As a result, it has been found that the semiconductor element and the cooling member can be connected, and the heat dissipation can be improved.
  • the conductive shield can covering the semiconductor element, the structure in which the upper surface is removed, that is, the shape of the conductive shield can is made cylindrical, and the conductive shield can and a cooling member having conductivity are formed on the conductive heat conductive sheet. It has been found that by electrically connecting through the semiconductor device, it is possible to form an electrically closed space in the semiconductor device, so that the effect of suppressing electromagnetic waves can be greatly improved. As a result, the semiconductor device of the present invention can achieve both a heat radiation property and an electromagnetic wave suppressing effect at a higher level than ever before. In addition, in the semiconductor device of the present invention, since the upper surface of the conductive shield can is not formed, the semiconductor device can be made thinner and the manufacturing efficiency can be improved.
  • a semiconductor element formed on a substrate a conductive shield can having an opening, provided to cover at least a part of the semiconductor element, and connected to ground;
  • a semiconductor device comprising: a cooling member provided; and a conductive heat conductive sheet formed between the semiconductor element and the cooling member through at least an opening of the conductive shield can.
  • the conductive shield can has an interval between the conductive shield cans opposed to each other via the semiconductor element is 1/10 or less of a wavelength at a maximum frequency of the semiconductor element.
  • FIG. 1 is a diagram schematically illustrating a cross-sectional state of an embodiment of a semiconductor device of the present invention.
  • FIG. 9 is a diagram schematically illustrating a cross-sectional state of another embodiment of the semiconductor device of the present invention.
  • FIG. 9 is a diagram schematically illustrating a cross-sectional state of an embodiment of a conventional semiconductor device.
  • 1 is a perspective view schematically showing an assembled state of an embodiment of the semiconductor device of the present invention. It is the figure which showed typically the model of the semiconductor device used for the analysis of the frequency characteristic in an Example, (a) is the state seen from the surface side of the model of a semiconductor device, (b) is the back surface of the model of a semiconductor device. This shows the state viewed from the side.
  • Example 4 is a graph showing the electric field strength according to the frequency when the resistance value of the conductive heat conductive sheet of the semiconductor device is changed in Example 1.
  • 11 is a graph showing the electric field strength according to the frequency when the magnetic characteristics of the conductive heat conductive sheet of the semiconductor device are changed in Example 2.
  • FIGS. 1 and 2 are diagrams schematically showing a cross section of an embodiment of the semiconductor device of the present invention.
  • FIG. 4 is a perspective view for explaining an assembled state of one embodiment of the semiconductor device of the present invention.
  • the shape and scale of each member are shown in a state different from the actual one for convenience of explanation. Except as specified in this specification, the shape and scale of each member can be appropriately changed for each semiconductor device.
  • the semiconductor device 1 of the present invention includes a semiconductor element 30, a conductive shield can 20, a conductive cooling member 40, and a conductive heat conductive sheet 10.
  • the semiconductor device 30 has a cylindrical shape provided so as to surround the side surface 30a of the semiconductor element 30, and the conductive heat conductive sheet 10 It is formed between the semiconductor element 30 and the cooling member 40, and the conductive shield can 20 and the cooling member 40 are electrically connected through the conductive heat conductive sheet 10. It is characterized by having.
  • the semiconductor element 30 is a source of heat and electromagnetic waves.
  • providing the conductive shield can 20 so as to cover the semiconductor element 30 enables electromagnetic waves to be shielded, so that an excellent electromagnetic wave suppressing effect can be obtained.
  • the conductive shield can 20 is formed in a cylindrical shape from which an upper surface (an upper surface when viewed in the stacking direction) is removed, and a sheet having high conductivity and conductivity is provided inside the conductive shield can 20.
  • the conductive shield can 20 and the cooling member 40 are electrically connected to each other through the conductive heat conductive sheet 10, so that the electric current can be reduced in the semiconductor device 1 of the present invention.
  • a closed space (a space surrounded by a broken line in FIGS. 1 and 2) is formed, so that the electromagnetic shielding effect of the conductive shield can 20 can be enhanced, and an excellent electromagnetic shielding effect can be realized.
  • the semiconductor device 1 of the present invention since the upper surface of the conductive shield can 20 is removed, the semiconductor device 1 can be made thinner as compared with the conventional technology using the conductive shield can.
  • the conductive heat conductive sheet 10 can be easily provided between the semiconductor element 30 and the cooling member 40, and the manufacturing efficiency can be obtained.
  • FIG. 3 shows an example of a conventional semiconductor device.
  • the conductive shield can 20 is provided so as to cover the semiconductor element 30, a high electromagnetic wave suppression effect can be obtained.
  • the semiconductor device 1 of the present invention has a configuration in which the conductive heat conductive sheets 10 are stacked via the conductive shield can 20, the semiconductor element 30 and the cooling member are compared with the semiconductor device 1 of the present invention. 40, the heat resistance between them is so large that sufficient heat dissipation cannot be obtained.
  • the semiconductor device 1 of the present invention includes a semiconductor element 30 formed on a substrate 50, as shown in FIGS.
  • the semiconductor element is not particularly limited as long as it is a semiconductor electronic component.
  • integrated circuits such as ICs and LSIs, CPUs, MPUs, graphic operation elements, image sensors, and the like can be given.
  • the substrate 50 on which the semiconductor element 30 is formed is not particularly limited, and a suitable substrate can be used according to the type of the semiconductor device.
  • the substrate 50 is provided with a ground (GND) 60.
  • the ground 60 is formed on the inner layer of the substrate 50 or on the back surface (the back surface of the substrate in FIGS. 1 and 1).
  • a land 51 is provided on the surface of the substrate 50 so as to surround the semiconductor element 30 entirely or partially.
  • the conductive shield can 20 may be connected to this portion by soldering or the like.
  • the land 51 is electrically connected to the ground 60 through a conductive processing through hole 52 formed in the substrate 50, thereby electrically connecting the conductive shield can 20 to the ground 60.
  • the conductive shield can 20 is provided on the land 51 so as to be electrically connected to the ground 60.
  • the conductive shield can 20 penetrates through the substrate 50. , And may be directly connected to the ground 60.
  • the semiconductor device 1 of the present invention includes a cylindrical conductive shield can 20 connected to the ground 60 and provided so as to surround the side surface 30 a of the semiconductor element 30. Electromagnetic waves can be shielded by the conductive shield can 20 connected to the ground 60, and the effect of suppressing the electromagnetic waves of the semiconductor device 1 of the present invention can be improved.
  • the material of the conductive shield can 20 is not particularly limited as long as it has a high electromagnetic wave shielding effect.
  • a highly conductive metal such as aluminum, copper, and stainless steel, a highly conductive magnetic material, or the like can be used.
  • the magnetic material having high conductivity include permalloy, sendust, Fe-based or Co-based amorphous materials, microcrystalline materials, and the like.
  • the conductive shield can 20 is cylindrical and has a shape in which a conventional upper surface (upper surface when viewed in the laminating direction) portion 20b is removed as shown in FIG.
  • the conductive shield can 20 is formed in a cylindrical shape, a conductive heat conductive sheet 10 described later is formed therein, and the semiconductor element 30 and the cooling member can be connected to each other. Heat dissipation can be realized.
  • the cylindrical shape is not particularly limited, and can be appropriately changed according to the size and shape of the semiconductor element 30.
  • it may be a rectangular tubular shape, or alternatively, a cylindrical shape or another irregular shaped tubular shape. From the viewpoint of releasing heat from the semiconductor element 30, it is preferable to increase the distance W between the conductive shield cans 20 facing each other via the semiconductor element 30 and use a large conductive heat conductive sheet 10.
  • the conductive shield can 20 is configured such that, when viewed in a cross section along the stacking direction, the distance W between the conductive shield cans facing each other with the semiconductor element interposed therebetween is the same as that of the semiconductor. It is preferable that the wavelength is 1/10 or less of the wavelength at the maximum frequency of the element 30. For example, when the frequency of the semiconductor element 30 is 1 GHz, the wavelength is 300 mm (light speed / frequency), and therefore, it is preferable that the interval W is 30 mm or less.
  • the semiconductor device 1 of the present invention includes a conductive cooling member 40 provided above the semiconductor element 30 and the conductive shield can 20.
  • the cooling member 40 is a member that absorbs heat generated from the heat source (semiconductor element 30) and dissipates the heat to the outside.
  • the cooling member 40 has conductivity, the cooling member 40 is electrically connected to the conductive shield can 20 via a conductive heat conductive sheet 10 described later, so that an electrically closed space (FIG. 1 and FIG. By forming the region A) surrounded by the broken line 2, the effect of suppressing the electromagnetic wave of the semiconductor device 1 can be enhanced.
  • the type of the conductive cooling member 40 is not particularly limited, and can be appropriately selected according to the type of the semiconductor device 1 of the present invention.
  • a radiator, a cooler, a heat sink, a heat spreader, a die pad, a cooling fan, a heat pipe, a metal cover, a housing, and the like can be given.
  • these conductive cooling members it is preferable to use a conductive radiator, cooler, or heat sink from the viewpoint of obtaining more excellent heat dissipation.
  • the material constituting the conductive cooling member 40 preferably includes a metal such as aluminum, copper, and stainless steel, graphite, and the like, from the viewpoint of increasing the thermal conductivity.
  • the conductive cooling member 40 is provided above the conductive shield can 20 as shown in FIGS. 1 and 2, but is not in contact with the conductive shield can 20 and is provided at a predetermined distance. Is preferred. This is because the conductive heat conductive sheet 10 described later is filled between the upper surface 20 a of the conductive shield can 20 and the conductive cooling member 40.
  • the conductive cooling member 40 may be provided with a projection (not shown) at a portion of the back surface 40b that comes into contact with a conductive heat conductive sheet 10 described later. By providing the projections, the distance between the conductive heat conductive sheet 10 and the conductive shield can 20 provided via the conductive heat conductive sheet 10 can be reduced, and the conductive heat conductive sheet 10 is formed of a film or the like. Even so, a strong connection is possible.
  • the semiconductor device 1 of the present invention includes a conductive heat conductive sheet 10 formed between the semiconductor element 30 and the conductive cooling member 40.
  • the cooling member 40 is electrically connected to the cooling member 40 via the conductive heat conductive sheet 10.
  • the conductive heat conductive sheet 10 having high heat conductivity between the semiconductor element 30 and the cooling member 40, it is possible to improve the heat dissipation without lowering the electromagnetic wave suppressing effect.
  • electrically connecting the conductive shield can 20 and the cooling member 40 via the conductive heat conductive sheet 10 having conductivity as shown in FIGS.
  • the electrically closed space A being formed in the semiconductor device 1 of the present invention, it is possible to enhance the electromagnetic shielding effect of the conductive shield can 20 and realize an excellent electromagnetic shielding effect.
  • the shape of the conductive heat conductive sheet 10 is not particularly limited, and can be appropriately changed according to the shape of the conductive shield can 20 or the semiconductor element 30.
  • the size of the conductive heat conductive sheet 10 is not particularly limited. However, as shown in FIGS. 1 and 2, it is necessary to fill the opening of the conductive shield can 20 with no gap. This is for ensuring the electrical connection between the conductive shield can 20 and the cooling member 40.
  • the upper end 20 a of the conductive shield can 20 cuts into the conductive heat conductive sheet 10 (in other words, the conductive heat conductive sheet 10).
  • the area of the lower surface 10a of the conductive sheet 10 is preferably larger than the opening area of the cylindrical conductive shield can 20).
  • the electrical connection between the conductive shield can 20 and the cooling member 40 is more efficient compared to a mode in which the conductive heat conductive sheet 10 is filled in the conductive shield can 20. Therefore, the electromagnetic wave suppressing effect can be further improved, and the bonding strength between the conductive heat conductive sheet 10 and the conductive shield can 20 can be increased.
  • the conductive heat conductive sheet 10 may be composed of a single sheet or a plurality of sheets.
  • the conductive heat conductive sheet 10 when the conductive heat conductive sheet 10 does not cover the upper end 20 a of the shield can 20, the conductive heat conductive sheet 10 can be formed of a single sheet. However, from the viewpoint that the thickness of the sheet can be easily adjusted, the sheet can be composed of a plurality of sheets.
  • the conductive shield can 20 when the conductive heat conductive sheet 10 covers the upper end 20 a of the conductive shield can 20, the conductive shield can 20 is formed using one conductive heat conductive sheet 10. Can be manufactured by pressure bonding, or the conductive heat conductive sheet 10 can be formed by combining a plurality of sheets.
  • the thickness T of the conductive heat conductive sheet 10 is not particularly limited, and may be appropriately changed according to the distance between the semiconductor element 30 and the cooling member 40, the size of the conductive shield can 20, and the like. it can.
  • the thickness T of the conductive heat conductive sheet 10 is preferably 50 ⁇ m to 4 mm, more preferably 100 ⁇ m to 4 mm, from the viewpoint that the heat radiation property and the effect of suppressing electromagnetic waves can be realized at a higher level. It is particularly preferred that it is between 200 ⁇ m and 3 mm.
  • the thickness T of the conductive heat conductive sheet 10 exceeds 4 mm, the distance between the semiconductor element 30 and the cooling member 40 becomes long, and thus the thermal conductivity may be reduced.
  • the thickness T of the conductive sheet 10 is less than 50 ⁇ m, the effect of suppressing electromagnetic waves may be reduced.
  • the thickness T of the conductive heat conductive sheet 10 means the thickness T of the thickest part of the conductive heat conductive sheet 10 as shown in FIGS. Irrespective of whether it is formed from a plurality of sheets or a plurality of sheets.
  • the conductive heat conductive sheet 10 preferably has high conductivity from the viewpoint of achieving an excellent electromagnetic wave suppression effect.
  • the resistivity of the conductive heat conductive sheet 10 is preferably 0.15 ⁇ ⁇ m or less, more preferably 1.5 ⁇ 10 ⁇ 2 ⁇ ⁇ m or less, and 1.5 ⁇ 10 ⁇ 3 ⁇ or less. M or less, more preferably 1.5 ⁇ 10 ⁇ 4 ⁇ ⁇ m or less.
  • the resistivity of the conductive heat conductive sheet 10 is preferably 1.5 ⁇ 10 ⁇ 7 ⁇ ⁇ m or more.
  • the method for adjusting the conductivity (resistivity) of the conductive heat conductive sheet 10 is not particularly limited, but may be changed by changing the type of the binder resin, the material of the filler, the amount of the filler, the orientation direction, and the like. It is possible to adjust.
  • the conductive heat conductive sheet 10 is preferably at least 5 W / mK, more preferably at least 10 W / mK, particularly preferably at least 20 W / mK. This is because the efficiency of heat exchange between the semiconductor element 30 and the cooling member 40 can be further increased, and the heat dissipation can be further improved.
  • the conductive heat conductive sheet 10 preferably has magnetic properties. This is because the conductive heat conductive sheet 10 can be provided with electromagnetic wave absorbing performance, so that a more excellent electromagnetic wave suppressing effect can be obtained.
  • the method for adjusting the magnetic properties of the conductive heat conductive sheet 10 is not particularly limited. However, the conductive heat conductive sheet 10 is made to contain magnetic powder and the like, and by changing the compounding amount and the like, It is possible to adjust.
  • the conductive heat conductive sheet 10 preferably has tackiness or adhesiveness on the surface. This is because the adhesiveness between the conductive heat conductive sheet 10 and other members can be improved. Further, when the conductive heat conductive sheet 10 is composed of a plurality of sheets, the adhesiveness between the sheets can be improved.
  • the method for imparting tackiness to the surface of the conductive heat conductive sheet 10 is not particularly limited. For example, tackiness can be imparted by optimizing a binder resin constituting the conductive heat conductive sheet 10 described later, and a tacky adhesive layer is separately provided on the surface of the conductive heat conductive sheet 10. You can also.
  • the conductive heat conductive sheet 10 has flexibility. Since the shape of the conductive heat conductive sheet 10 can be easily changed, the ease of assembling the semiconductor device 1 is improved, and the bonding force between the conductive heat conductive sheet 10 and the conductive shield can 20 is increased. You can also.
  • the flexibility of the conductive heat conductive sheet 10 for example, the storage elastic modulus at 25 ° C. measured by dynamic elastic modulus measurement is preferably in the range of 50 kPa to 50 MPa.
  • the conductive heat conductive sheet 10 preferably contains a cured resin. This is because the conductive heat conductive sheet 10 can be provided with high flexibility, surface tackiness, and the like.
  • the material of the conductive heat conductive sheet 10 is not particularly limited as long as it has excellent electromagnetic wave absorption performance and heat conductivity.
  • the conductive heat conductive sheet may include a binder resin, a conductive heat conductive filler, and other components. it can.
  • the binder resin constituting the conductive heat conductive sheet is a resin component serving as a base material of the conductive heat conductive sheet.
  • the type is not particularly limited, and a known binder resin can be appropriately selected.
  • one of the binder resins is a thermosetting resin.
  • thermosetting resin examples include a crosslinkable rubber, an epoxy resin, a polyimide resin, a bismaleimide resin, a benzocyclobutene resin, a phenol resin, an unsaturated polyester, a diallyl phthalate resin, a silicone, a polyurethane, a polyimide silicone, and a thermosetting resin.
  • crosslinkable rubber for example, natural rubber, butadiene rubber, isoprene rubber, nitrile rubber, hydrogenated nitrile rubber, chloroprene rubber, ethylene propylene rubber, chlorinated polyethylene, chlorosulfonated polyethylene, butyl rubber, halogenated butyl rubber, Fluorine rubber, urethane rubber, acrylic rubber, polyisobutylene rubber, silicone rubber and the like are included. These may be used alone or in combination of two or more.
  • thermosetting resins it is preferable to use silicone from the viewpoint of excellent moldability and weatherability, as well as adhesion and followability to electronic components.
  • the silicone is not particularly limited, and the type of silicone can be appropriately selected according to the purpose. From the viewpoint of obtaining the moldability, weather resistance, adhesion, and the like described above, it is preferable that the silicone be a silicone composed of a main component of a liquid silicone gel and a curing agent. Examples of such a silicone include an addition-reaction-type liquid silicone and a heat-curable millable silicone using a peroxide for vulcanization.
  • the addition reaction type liquid silicone it is preferable to use a two-component addition reaction type silicone containing a polyorganosiloxane having a vinyl group as a main component and a polyorganosiloxane having a Si—H group as a curing agent.
  • the content of the binder resin in the conductive heat conductive sheet is not particularly limited, and can be appropriately selected according to the purpose.
  • it is preferably about 20% to 50% by volume, and more preferably 30% to 40% by volume of the conductive heat conductive sheet. More preferably, there is.
  • the conductive heat conductive sheet includes a conductive heat conductive filler (hereinafter, sometimes simply referred to as "heat conductive filler”) in the binder resin. Including.
  • the conductive filler having conductivity is a component for improving the thermal conductivity and conductivity of the sheet.
  • the kind of the heat conductive filler is not particularly limited, but it is preferable to use a fibrous heat conductive filler from the viewpoint of realizing higher heat conductivity.
  • the “fibrous” of the fibrous heat conductive filler refers to a shape having a high aspect ratio (about 6 or more).
  • the fibrous or rod-shaped heat conductive filler not only the fibrous or rod-shaped heat conductive filler, but also the granular filler having a high aspect ratio, the flake-shaped heat conductive filler, and the like are used as the fibrous heat conductive filler. included.
  • the type of the fibrous heat conductive filler is not particularly limited as long as it is a fibrous material having high heat conductivity and conductivity, for example, silver, copper, a metal such as aluminum, Examples include ceramics such as alumina, aluminum nitride, silicon carbide, and graphite, and carbon fibers.
  • these fibrous heat conductive fillers it is more preferable to use carbon fibers from the viewpoint of obtaining higher heat conductivity and conductivity.
  • the said heat conductive filler which has electroconductivity you may use individually by 1 type, and may mix and use 2 or more types.
  • each of them may be a fibrous heat conductive filler or a fibrous heat conductive filler and another form of heat conductive filler. A mixture with a filler may be used.
  • the type of the carbon fiber is not particularly limited, and can be appropriately selected depending on the purpose.
  • pitch-based, PAN-based, graphitized PBO fibers, arc discharge, laser evaporation, CVD (chemical vapor deposition), CCVD (catalytic chemical vapor deposition), etc. can be used.
  • carbon fibers obtained by graphitizing PBO fibers and pitch-based carbon fibers are more preferable because high thermal conductivity and high conductivity can be obtained.
  • the carbon fiber can be used after part or all of its surface treatment, if necessary.
  • the surface treatment for example, an oxidation treatment, a nitridation treatment, a nitration, a sulfonation, or a metal, a metal compound, an organic compound, or the like attached to the surface of a functional group or carbon fiber introduced to the surface by these treatments or For example, a coupling process may be used.
  • the functional group include a hydroxyl group, a carboxyl group, a carbonyl group, a nitro group, an amino group, and the like.
  • the average fiber length (average major axis length) of the fibrous heat conductive filler is not particularly limited and can be appropriately selected.
  • 50 ⁇ m to 50 ⁇ m It is preferably in the range of 300 ⁇ m, more preferably in the range of 75 ⁇ m to 275 ⁇ m, and particularly preferably in the range of 90 ⁇ m to 250 ⁇ m.
  • the average fiber diameter (average minor axis length) of the fibrous heat conductive filler is not particularly limited and can be appropriately selected.
  • 4 ⁇ m It is preferably in the range of 20 ⁇ m to 20 ⁇ m, and more preferably in the range of 5 ⁇ m to 14 ⁇ m.
  • the aspect ratio (average major axis length / average minor axis length) of the fibrous heat conductive filler is preferably 6 or more from the viewpoint of ensuring high thermal conductivity. Preferably it is 30. Even when the aspect ratio is small, the effect of improving thermal conductivity and the like can be seen, but a large effect of improving characteristics cannot be obtained due to a decrease in orientation, and the aspect ratio is set to 6 or more. On the other hand, when it exceeds 30, the dispersibility in the conductive heat conductive sheet is reduced, so that a sufficient heat conductivity may not be obtained.
  • the average major axis length and average minor axis length of the fibrous heat conductive filler are measured by, for example, a microscope, a scanning electron microscope (SEM), or the like, and an average is calculated from a plurality of samples. can do.
  • the content of the conductive filler having conductivity in the conductive heat conductive sheet is not particularly limited and can be appropriately selected depending on the intended purpose. Is preferably 5 to 30% by volume, more preferably 6 to 20% by volume. If the content is less than 4% by volume, it may be difficult to obtain a sufficiently low thermal resistance. If the content exceeds 40% by volume, the moldability of the conductive heat conductive sheet and the fibrous heat There is a possibility that the orientation of the conductive filler is affected.
  • the heat conductive filler having conductivity is oriented in one direction or a plurality of directions. This is because higher thermal conductivity and higher electromagnetic wave absorption can be realized by orienting the thermal conductive filler.
  • the heat conductive filler is substantially perpendicular to the sheet surface. Can be oriented.
  • the heat conductive filler can be oriented substantially parallel to the sheet surface or in another direction.
  • a direction substantially perpendicular to or substantially parallel to the sheet surface means a direction substantially perpendicular to or substantially parallel to the sheet surface direction.
  • the method of adjusting the orientation angle of the thermally conductive filler having conductivity is not particularly limited.
  • the conductive heat conductive sheet may further include an inorganic filler in addition to the binder resin and the conductive heat conductive fiber described above. This is because the heat conductivity of the conductive heat conductive sheet can be further increased and the strength of the sheet can be improved.
  • the shape, material, average particle size and the like of the inorganic filler are not particularly limited, and can be appropriately selected according to the purpose. Examples of the shape include a spherical shape, an elliptical spherical shape, a block shape, a granular shape, a flat shape, and a needle shape. Among these, a spherical shape and an elliptical shape are preferred from the viewpoint of filling properties, and a spherical shape is particularly preferred.
  • Examples of the material of the inorganic filler include aluminum nitride (aluminum nitride: AlN), silica, alumina (aluminum oxide), boron nitride, titania, glass, zinc oxide, silicon carbide, silicon (silicon), silicon oxide, and aluminum oxide. And metal particles. These may be used alone or in combination of two or more. Among these, alumina, boron nitride, aluminum nitride, zinc oxide, and silica are preferable, and alumina and aluminum nitride are particularly preferable in terms of thermal conductivity.
  • the inorganic filler those subjected to a surface treatment can also be used.
  • the inorganic filler is treated with a coupling agent as the surface treatment, the dispersibility of the inorganic filler is improved, and the flexibility of the conductive heat conductive sheet is improved.
  • the average particle diameter of the inorganic filler can be appropriately selected according to the type of the inorganic substance and the like.
  • the average particle size is preferably 1 ⁇ m to 10 ⁇ m, more preferably 1 ⁇ m to 5 ⁇ m, and particularly preferably 4 ⁇ m to 5 ⁇ m. If the average particle size is less than 1 ⁇ m, the viscosity may increase and mixing may be difficult. On the other hand, when the average particle size exceeds 10 ⁇ m, the thermal resistance of the conductive heat conductive sheet may increase.
  • the average particle size is preferably from 0.3 ⁇ m to 6.0 ⁇ m, more preferably from 0.3 ⁇ m to 2.0 ⁇ m, and particularly preferably from 0.5 ⁇ m to 1.5 ⁇ m. preferable. If the average particle size is less than 0.3 ⁇ m, the viscosity may increase and mixing may be difficult, and if it exceeds 6.0 ⁇ m, the thermal resistance of the conductive heat conductive sheet may increase.
  • the average particle size of the inorganic filler can be measured by, for example, a particle size distribution meter or a scanning electron microscope (SEM).
  • the conductive heat conductive sheet preferably further includes a magnetic metal powder in addition to the binder resin, the fibrous heat conductive fibers, and the inorganic filler.
  • the magnetic metal powder By including the magnetic metal powder, the magnetic properties of the conductive heat conductive sheet can be enhanced, and the effect of suppressing the electromagnetic waves of the semiconductor device can be improved.
  • the type of the magnetic metal powder is not particularly limited, except that the magnetic properties of the conductive heat conductive sheet can be enhanced and electromagnetic wave absorption can be improved.
  • a known magnetic metal powder can be appropriately selected. it can.
  • amorphous metal powder or crystalline metal powder can be used.
  • the amorphous metal powder include Fe-Si-B-Cr, Fe-Si-B, Co-Si-B, Co-Zr, Co-Nb, and Co-Ta powders.
  • the crystalline metal powder include pure iron, Fe-based, Co-based, Ni-based, Fe-Ni-based, Fe-Co-based, Fe-Al-based, Fe-Si-based, and Fe-Si-Al-based.
  • the crystalline metal powder a microcrystalline metal obtained by adding a small amount of N (nitrogen), C (carbon), O (oxygen), B (boron), etc. Powder may be used.
  • the magnetic metal powder a powder of different materials or a powder of two or more powders having different average particle diameters may be used.
  • the shape of the magnetic metal powder such as a spherical shape and a flat shape.
  • a spherical magnetic metal powder having a particle size of several ⁇ m to several tens ⁇ m.
  • Such a magnetic metal powder can be produced by, for example, an atomizing method or a method of thermally decomposing metal carbonyl.
  • the atomizing method has an advantage that a spherical powder is easily produced, and the molten metal is caused to flow out of a nozzle, and a jet stream of air, water, an inert gas, or the like is sprayed on the discharged molten metal to solidify as a droplet. It is a method of making powder.
  • the cooling rate is preferably set to about 1 ⁇ 10 6 (K / s) in order to prevent the molten metal from being crystallized.
  • the surface of the amorphous alloy powder can be made smooth.
  • the filling property of the binder resin can be improved. Further, the filling property can be further improved by performing the coupling treatment.
  • the conductive heat conductive sheet may appropriately include other components depending on purposes.
  • other components include a thixotropic agent, a dispersant, a curing accelerator, a retarder, a slight tackifier, a plasticizer, a flame retardant, an antioxidant, a stabilizer, and a colorant.
  • the method for manufacturing the above-described semiconductor device of the present invention is not particularly limited.
  • a cylindrical conductive shield can provided so as to surround the side surface 30 a of the semiconductor element 30.
  • a manufacturing method including a step of bonding the conductive shield can 20 and the conductive heat conductive sheet 10 by pressing the conductive heat conductive sheet 10 on the upper end 20a of the conductive heat conductive sheet 10 can be used.
  • the upper end 20a of the conductive shield can 20 can be reliably penetrated into the conductive heat conductive sheet 10 without going through complicated steps, resulting in excellent heat dissipation and excellent electromagnetic wave suppression effect. It is possible to efficiently manufacture a semiconductor device having the above.
  • steps other than the step of pressing the conductive heat conductive sheet 10 described above are not particularly limited, and a known manufacturing method can be appropriately employed.
  • an analysis model of a semiconductor device as shown in FIGS. 5A and 5B is prepared using a three-dimensional electromagnetic field simulator ANSYS HFSS (manufactured by Ansys), and the electromagnetic wave suppression effect is evaluated.
  • ANSYS HFSS manufactured by Ansys
  • the conductive heat conductive sheet 10 used in the model of the semiconductor device uses two-component addition-reaction liquid silicone as a resin binder, alumina particles having an average particle size of 5 ⁇ m, and a fibrous conductive material.
  • thermal conductive sheet having an average fiber length of 200 ⁇ m (“thermally conductive fiber” manufactured by Nippon Graphite Fiber Co., Ltd.) as a conductive filler
  • two-component addition reaction type liquid silicone: alumina particles: pitch-based carbon fiber 35 vol %: 53 vol%: 12 vol%
  • the obtained thermal conductive sheet had an average thermal conductivity in the vertical direction (calculated by combining the thermal resistance at the interface and the internal thermal resistance) of 9.2 W / mK as measured according to ASTM D5470.
  • the dimensions of the conductive heat conductive sheet 10 were 20 mm ⁇ 20 mm, and the thickness T was 1 mm.
  • the resistivity of the conductive heat conductive sheet 10 was changed. As shown in FIG. 6, the resistivity was 1.218 ⁇ ⁇ m, 0.122 ⁇ ⁇ m, respectively.
  • a sample having a low conductivity (dielectric) of 0.012 ⁇ ⁇ m was prepared.
  • the cooling member 40 (heat sink) used for the model of the semiconductor device was an aluminum plate as a material, the size was 30 mm ⁇ 30 mm, and the thickness was 0.3 mm.
  • the conductive shield can 20 is made of stainless steel having a thickness of 0.2 mm, and has an outer diameter of 22 mm ⁇ 22 mm ⁇ 3 mm, and has a hollow rectangular tube shape. The clearance between the cooling member 40 (heat sink) and the upper surface of the conductive shield can 20 was set to 0.2 mm.
  • FIGS. 5A and 5B show analysis models of the semiconductor device, which are viewed from the upper surface side (front surface side) and the lower surface side (rear surface side), respectively. .
  • the components are shown transparently so that the positional relationship between the members constituting the semiconductor device can be understood.
  • the cross-sectional structure of the analysis model is the same as that of FIG. 1, and the semiconductor element 30 has a microstrip line (MSL) 31 covered with a resin mold as shown in FIGS. 5 (a) and 5 (b).
  • MSL microstrip line
  • the MSL 31 has a copper signal line (signal line size: 2 mm ⁇ 1 mm ⁇ 0.02 mm) on the front side of the dielectric substrate 50 (substrate size: 30 mm ⁇ 30 mm ⁇ 0.65 mm) and a ground 60 on the back side. It was done.
  • the signal source of the semiconductor element 30 is simplified by the MSL 31, and both ends are set to signal input / output terminals.
  • the main body of the semiconductor element 30 portion molded with resin
  • the size of the main body of the semiconductor element 30 was 16 mm ⁇ 16 mm ⁇ 0.7 mm.
  • FIG. 6 shows the obtained electric field strength calculation results.
  • the electric field strength calculation results when the conductive heat conductive sheet 10 used is 1.218 ⁇ ⁇ m, 0.122 ⁇ ⁇ m, 0.012 ⁇ ⁇ m, and has extremely low conductivity (dielectric). Each is shown.
  • the analysis model using the conductive heat conductive sheet 10 of 1.218 ⁇ ⁇ m, 0.122 ⁇ ⁇ m, and 0.012 ⁇ ⁇ m included in the range of the present invention has extremely low conductivity (dielectric).
  • a favorable electromagnetic wave suppression effect (reduction of electric field intensity) was confirmed.
  • the analysis model using the conductive heat conductive sheet 10 having a low resistivity of the conductive heat conductive sheet 10 of 0.122 ⁇ ⁇ m and 0.012 ⁇ ⁇ m confirmed a more excellent electromagnetic wave suppressing effect.
  • Example 2 In the second embodiment, an analysis model of a semiconductor device as shown in FIGS. 5A and 5B is manufactured using the three-dimensional electromagnetic field simulator under the same conditions as in the first embodiment, and the electromagnetic wave suppression effect is reduced. An evaluation was performed.
  • the resistivity of the conductive heat conductive sheet 10 used for the model of the semiconductor device was 0.122 ⁇ ⁇ m.
  • a part of the alumina was replaced with magnetic powder (Fe-Si-B-Cr amorphous magnetic particles), and the imaginary part ⁇ r ′′ of the relative magnetic permeability at 5 GHz was used. Samples were prepared under the same conditions (all dimensions, thickness, and thermal conductivity were the same), except that the magnetic properties were imparted so that was 3.
  • FIG. 7 shows the calculation results.
  • the electric field strength obtained from the analytical model of the semiconductor device is shown as “magnetic powder contained (0.122 ⁇ ⁇ m)”
  • the conductive heat conductive The electric field strength obtained from the analysis model of the semiconductor device when no magnetic powder was contained in the sheet 10 was shown as “no magnetic powder contained (0.122 ⁇ ⁇ m)”.

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PCT/JP2019/024363 2018-06-21 2019-06-19 半導体装置及び半導体装置の製造方法 Ceased WO2019244950A1 (ja)

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US16/973,765 US11329005B2 (en) 2018-06-21 2019-06-19 Semiconductor device and method of producing the same
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CN120581525B (zh) * 2025-08-01 2025-10-28 成都天锐星通科技股份有限公司 一种屏蔽结构与射频芯片封装器件及电子设备

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KR102432180B1 (ko) 2022-08-16
US11329005B2 (en) 2022-05-10

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