WO2019225525A1 - Film de libération pour procédé de scellement de semi-conducteur et méthode de fabrication de composant électronique l'utilisant - Google Patents

Film de libération pour procédé de scellement de semi-conducteur et méthode de fabrication de composant électronique l'utilisant Download PDF

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Publication number
WO2019225525A1
WO2019225525A1 PCT/JP2019/019825 JP2019019825W WO2019225525A1 WO 2019225525 A1 WO2019225525 A1 WO 2019225525A1 JP 2019019825 W JP2019019825 W JP 2019019825W WO 2019225525 A1 WO2019225525 A1 WO 2019225525A1
Authority
WO
WIPO (PCT)
Prior art keywords
release film
semiconductor
sealing
semiconductor encapsulation
mold
Prior art date
Application number
PCT/JP2019/019825
Other languages
English (en)
Japanese (ja)
Inventor
奬 野々下
齊藤　岳史
純平 藤原
Original Assignee
デンカ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by デンカ株式会社 filed Critical デンカ株式会社
Publication of WO2019225525A1 publication Critical patent/WO2019225525A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/56—Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
    • B29C33/68—Release sheets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/32—Layered products comprising a layer of synthetic resin comprising polyolefins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings

Definitions

  • the present invention relates to a release film for a semiconductor sealing process and an electronic component manufacturing method using the same.
  • a release film is disposed between the inner surface of the mold and the semiconductor chip in order to obtain a release property between the sealing resin and the mold after the resin is cured.
  • the method to be taken is taken.
  • a tetrafluoroethylene-ethylene copolymer (ETFE) resin film for example, Patent Document 1
  • ETFE tetrafluoroethylene-ethylene copolymer
  • Patent Document 2 a polystyrene resin release film having a low unit price has also been proposed (for example, Patent Document 2).
  • the release film of Patent Document 2 is inferior in heat resistance and has a problem that wrinkles are easily generated in a sealing process at a high temperature.
  • JP 2001-310336 A Japanese Patent Laid-Open No. 2015-021017
  • the present invention has been made in view of such circumstances, has a mold release property and mold followability that exceed a certain level, is less likely to cause wrinkles in a sealing process at a high temperature, and is low in cost. It aims at providing the release film for semiconductor sealing processes which can be used.
  • the present inventor has examined various resins, and as a result, in the release film for semiconductor encapsulation process having the surface layer (A) and the heat-resistant resin layer (B), the surface layer (A) is 4-methyl.
  • the surface layer (A) is 4-methyl.
  • E'1 180-degrees storage elastic modulus of the above-mentioned release film for semiconductor encapsulation process, including pentene-1 polymer, a predetermined or higher mold release property and mold follow-up
  • the surface layer (A) comprises 4-methyl-pentene-1 polymer;
  • the mold release film for semiconductor sealing processes whose 180 degreeC storage elastic modulus (E'1) of the said mold release film for semiconductor sealing processes is 250 MPa or more and 1500 MPa or less.
  • the surface layer (A) comprises 4-methyl-pentene-1 polymer;
  • E′1 storage elastic modulus
  • (F) of the release film for semiconductor encapsulation process calculated from the following formula 1 is 5000 N / mm or more and 130,000 N / mm or less, (1) to (3) Release film for semiconductor sealing process.
  • 180 ° C. strength (F) 180 ° C. storage elastic modulus (E′1) ⁇ thickness (mm)
  • the storage elastic modulus (E′1) at 180 ° C. of the release film for semiconductor encapsulation process is 0.5 to 1.0 times the storage elastic modulus (E′2) at 23 ° C.,
  • the thickness of the release film for semiconductor encapsulation process is 20 ⁇ m or more and 125 ⁇ m or less, and the thickness of the heat-resistant resin layer (B) is 20% of the thickness of the release film for semiconductor encapsulation process.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Laminated Bodies (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

Le problème décrit par la présente invention est de fournir un film de libération qui est destiné à un procédé de scellement de semi-conducteur et qui présente au moins un certain niveau d'aptitude au détachement et de capacité de suivi de moule, réduit l'apparition de plis, même dans un procédé de scellement à haute température, et peut être utilisé à faible coût. La solution selon l'invention porte sur un film de libération pour un procédé de scellement de semi-conducteur qui a une couche de surface (A) et une couche de résine résistante à la chaleur (B), la couche de surface (A) comprenant un polymère de 4-méthylpentène-1, et le film de libération pour un procédé de scellement de semi-conducteur a un module élastique de stockage (E'1) de 250 à 1500 MPa à 180°C.
PCT/JP2019/019825 2018-05-22 2019-05-20 Film de libération pour procédé de scellement de semi-conducteur et méthode de fabrication de composant électronique l'utilisant WO2019225525A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-097837 2018-05-22
JP2018097837A JP2021130197A (ja) 2018-05-22 2018-05-22 半導体封止プロセス用離型フィルム及びそれを用いた電子部品の製造方法

Publications (1)

Publication Number Publication Date
WO2019225525A1 true WO2019225525A1 (fr) 2019-11-28

Family

ID=68616940

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2019/019825 WO2019225525A1 (fr) 2018-05-22 2019-05-20 Film de libération pour procédé de scellement de semi-conducteur et méthode de fabrication de composant électronique l'utilisant

Country Status (3)

Country Link
JP (1) JP2021130197A (fr)
TW (1) TW202012140A (fr)
WO (1) WO2019225525A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220001581A1 (en) * 2018-10-04 2022-01-06 Nitto Denko Corporation Heat-resistant release sheet and thermocompression bonding method

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02102552A (ja) * 1988-10-12 1990-04-16 Seiko Epson Corp 半導体装置の製造方法
JP2002158242A (ja) * 1999-11-30 2002-05-31 Hitachi Chem Co Ltd 半導体モールド用離型シート及び樹脂封止半導体装置の製造法
JP2010208104A (ja) * 2009-03-09 2010-09-24 Mitsui Chemicals Inc 半導体封止プロセス用離型フィルム、およびそれを用いた樹脂封止半導体の製造方法
JP2011134811A (ja) * 2009-12-22 2011-07-07 Nitto Denko Corp 基板レス半導体パッケージ製造用耐熱性粘着シート、及びその粘着シートを用いる基板レス半導体パッケージ製造方法
WO2015133634A1 (fr) * 2014-03-07 2015-09-11 旭硝子株式会社 Film de libération de moule et procédé de production de corps scellé de manière étanche
WO2015133630A1 (fr) * 2014-03-07 2015-09-11 旭硝子株式会社 Film de démoulage, son procédé de fabrication, et procédé de fabrication d'un boîtier à semi-conducteur

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02102552A (ja) * 1988-10-12 1990-04-16 Seiko Epson Corp 半導体装置の製造方法
JP2002158242A (ja) * 1999-11-30 2002-05-31 Hitachi Chem Co Ltd 半導体モールド用離型シート及び樹脂封止半導体装置の製造法
JP2010208104A (ja) * 2009-03-09 2010-09-24 Mitsui Chemicals Inc 半導体封止プロセス用離型フィルム、およびそれを用いた樹脂封止半導体の製造方法
JP2011134811A (ja) * 2009-12-22 2011-07-07 Nitto Denko Corp 基板レス半導体パッケージ製造用耐熱性粘着シート、及びその粘着シートを用いる基板レス半導体パッケージ製造方法
WO2015133634A1 (fr) * 2014-03-07 2015-09-11 旭硝子株式会社 Film de libération de moule et procédé de production de corps scellé de manière étanche
WO2015133630A1 (fr) * 2014-03-07 2015-09-11 旭硝子株式会社 Film de démoulage, son procédé de fabrication, et procédé de fabrication d'un boîtier à semi-conducteur

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220001581A1 (en) * 2018-10-04 2022-01-06 Nitto Denko Corporation Heat-resistant release sheet and thermocompression bonding method

Also Published As

Publication number Publication date
TW202012140A (zh) 2020-04-01
JP2021130197A (ja) 2021-09-09

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