WO2019218629A1 - 显示面板、显示终端及显示母板 - Google Patents

显示面板、显示终端及显示母板 Download PDF

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Publication number
WO2019218629A1
WO2019218629A1 PCT/CN2018/116525 CN2018116525W WO2019218629A1 WO 2019218629 A1 WO2019218629 A1 WO 2019218629A1 CN 2018116525 W CN2018116525 W CN 2018116525W WO 2019218629 A1 WO2019218629 A1 WO 2019218629A1
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WO
WIPO (PCT)
Prior art keywords
layer
display
display panel
thin film
area
Prior art date
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Ceased
Application number
PCT/CN2018/116525
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English (en)
French (fr)
Inventor
张丽
孙兵兵
胡敏
柴亚琴
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Yungu Guan Technology Co Ltd
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Yungu Guan Technology Co Ltd
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Filing date
Publication date
Priority claimed from CN201820722043.4U external-priority patent/CN208271951U/zh
Priority claimed from CN201820714843.1U external-priority patent/CN208271900U/zh
Application filed by Yungu Guan Technology Co Ltd filed Critical Yungu Guan Technology Co Ltd
Priority to US16/565,506 priority Critical patent/US20200006703A1/en
Publication of WO2019218629A1 publication Critical patent/WO2019218629A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/88—Dummy elements, i.e. elements having non-functional features
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness

Definitions

  • the present application relates to the field of display technologies, and in particular, to a display panel, a display terminal, and a display motherboard.
  • the display panel is covered with an organic light-emitting diode (OLED) device by a thin film package structure to realize packaging.
  • OLED organic light-emitting diode
  • the inorganic layer of the thin film encapsulation structure has high density and can be used to block water and oxygen intrusion.
  • the inorganic film layer of the thin film encapsulation structure is not closely contacted with the organic light emitting material evaporated on the anode of the device, and the gap between the contact surfaces is liable to cause water and oxygen intrusion. Therefore, the pixel defining layer of the thin film encapsulation structure is prone to the problem of package failure such as water and oxygen intrusion. In turn, damage to the OLED device is affected, thereby affecting the service life of the display panel.
  • flexible display panels typically employ thin film encapsulation techniques.
  • the manufacturing process of the display panel generally includes cutting a display panel arranged in a matrix on the display mother board. In order to obtain a display panel of a special shape, it is usually necessary to perform cutting. However, during the cutting process, the film package structure is easily damaged, which affects the reliability of the film package.
  • a display panel, a display terminal, and a display motherboard are provided.
  • a display panel includes: a pixel defining layer, and a plurality of openings arranged in an array; an inorganic barrier layer disposed in an opening at an edge of the pixel defining layer, wherein one side of the inorganic barrier layer is provided a first groove disposed at intervals; an organic light emitting material layer disposed in the opening of the inorganic barrier layer and formed on the inorganic barrier layer; and a thin film encapsulation structure disposed on the pixel defining layer A thin film encapsulation structure is filled in the first recess and covers the organic light emitting material layer.
  • a display terminal comprising the above display panel.
  • a display mother board includes a carrier substrate and a plurality of alignment units formed on the carrier substrate. Each array unit defines a circular cutting line.
  • the alignment unit includes a display panel area located within the cutting line and an ablation area located outside the cutting line.
  • the display panel area includes a display area and a non-display area located around the display area.
  • the non-display area is provided with a barrier bank near the edge of the cutting line.
  • the resection zone is provided with a stress dispersion levee.
  • FIG. 1 is a cross-sectional view of a display panel according to an embodiment
  • FIG. 2 is a plan view of a display mother board according to an embodiment
  • Figure 3 is a plan view of the alignment unit of Figure 1;
  • Figure 4 is a cross-sectional view taken along line A-A' of Figure 1;
  • Figure 5 is a schematic cross-sectional view of an arrangement unit of another embodiment
  • FIG. 6 is a schematic cross-sectional view of an arrangement unit of another embodiment
  • Fig. 7 is a plan view of an array unit of another embodiment.
  • a display panel 100 includes a pixel defining layer 110 , an inorganic barrier layer 120 , an organic light emitting material layer 130 , and a thin film encapsulation structure 140 .
  • the pixel defining layer 110 is provided with a plurality of openings (not labeled) distributed in an array.
  • the inorganic barrier layer 120 is disposed in an opening at an edge of the pixel defining layer 110.
  • the organic light emitting material layer 130 is disposed in the opening in which the inorganic barrier layer 120 is located and formed on the inorganic barrier layer 120.
  • the inorganic barrier layer 120 is provided with a plurality of spaced apart first grooves on a side of the organic luminescent material layer 130.
  • the thin film encapsulation structure 140 is disposed on the pixel defining layer 110.
  • the thin film encapsulation structure 140 is filled in the first recess and covers the organic light emitting material layer 130.
  • the thin film encapsulation structure 140 is disposed on the surface of the organic luminescent material layer 130 facing away from the inorganic barrier layer 120.
  • the openings at the edges of the pixel defining layer 110 are typically used to set pixels, i.e., to form an organic light emitting unit for display.
  • the display panel 100 is configured to define an opening of the edge of the pixel defining layer 110, and to provide an inorganic barrier layer 120 having a water-oxygen barrier property superior to that of the organic light-emitting material layer 130, and to face the inorganic barrier layer 120 toward the organic light-emitting material layer 130.
  • a plurality of spaced apart first recesses are provided on one side to form the relief structure and are encapsulated by the thin film encapsulation structure 140.
  • the contact tightness of the organic light-emitting material layer 130 with the inorganic barrier layer 120 and the inorganic layer of the thin film encapsulation structure 140 is increased, the distance and difficulty of water and oxygen intruding into the OLED device are increased, and the water and oxygen barrier property is improved.
  • the reliability of the package and the service life of the display panel 100 are improved.
  • the shape of the first groove is a rectangle.
  • the projection of the inorganic barrier layer 120 toward the side of the organic luminescent material layer 130 on the longitudinal section of the display panel is square jagged.
  • the organic luminescent material layer 130 disposed in the first recess of the inorganic barrier layer 120 and the organic luminescent material layer disposed on the convex portion between the adjacent first recesses of the inorganic barrier layer 120 130 is a discontinuous distribution, that is, the organic luminescent material layer 130 disposed on the inorganic barrier layer 120 is discontinuous.
  • the area where the organic luminescent material layer 130 is located may be unnecessary to be displayed, and the organic luminescent material layer 130 may be formed in the opening by using an existing evaporation process without changing other processes such as a mask.
  • one side of the organic luminescent material layer 130 facing the inorganic barrier layer 120 may be a concave-convex structure corresponding to the inorganic barrier layer 120. That is, the organic light-emitting material layer 130 disposed in the first recess of the inorganic barrier layer 120 and the organic light-emitting material layer 130 disposed on the convex portion between the adjacent first recesses of the inorganic barrier layer 120 are continuous.
  • the first groove and the protrusion are curved connections, such that the projection of the inorganic barrier layer 120 toward the side of the organic light-emitting material layer 130 on the longitudinal section of the display panel 110 is wave-shaped, and the organic light is emitted at this time.
  • the area in which the material layer 130 is located can be used for display. That is, in other embodiments, the projection of the inorganic barrier layer 120 toward the side of the organic light-emitting material layer 130 on the cross section of the display panel may be other shapes such as a wave shape, as long as it is provided with a plurality of spaced groove structures. .
  • the surface of the thin film encapsulation structure 140 that is in contact with the organic luminescent material layer 130 is provided with a plurality of first protrusions that cooperate with the plurality of first recesses, such that the thin film encapsulation structure 140 and the organic luminescent material layer 130
  • the projection of the contact surface on the longitudinal section of the display panel 100 also has a concave-convex structure. Specifically, in the embodiment, the projection of the surface of the thin film encapsulation structure 140 contacting the organic luminescent material layer 130 on the cross section of the display panel 100 is square jagged. It can be understood that in other embodiments, the projection of the surface of the thin film encapsulation structure 140 in contact with the organic luminescent material layer 130 on the cross section of the display panel 100 may be wavy.
  • the thickness of the organic luminescent material layer 130 in the first recess of the inorganic barrier layer 120 is smaller than the depth of the first recess, and the thin film encapsulation structure 140 is filled in the first recess and located in the organic luminescent material layer. 130.
  • the surface of the thin film encapsulation structure 140 in contact with the organic luminescent material layer 130 has a concave-convex structure corresponding to the inorganic barrier layer 120.
  • the thin film encapsulation structure 140 and the inorganic barrier layer 120 are in direct contact at the sidewalls in the first recess, since the bottom layer of the thin film encapsulation structure 140 is an inorganic encapsulation layer, the inorganic encapsulation layer and The inorganic barrier layer 120 is in close contact at the sidewalls in the first recess, so that the package reliability of the thin film encapsulation structure 140 can be greatly improved.
  • the inorganic barrier layer 120 is a silicon dioxide film or a silicon nitride film. Specifically, the inorganic barrier layer 120 may be formed by a chemical vapor deposition method.
  • the inorganic barrier layer 120 has a thickness of 0.5 ⁇ m to 1 ⁇ m. If the thickness of the inorganic barrier layer 120 is less than 0.5 ⁇ m, it is inconvenient to set the first recess, which increases the process difficulty; if the thickness of the inorganic barrier layer 120 is greater than 1 ⁇ m, it not only affects the hole transport of the organic light-emitting material layer 130, but is not conducive to organic The normal light emission of the luminescent material layer 130 reduces the flexibility of the display panel 100 and increases the stress of the display panel 100.
  • the display panel 100 includes a display area and a frame area surrounding the periphery of the display area, and an opening at an outer edge of the pixel defining layer 110 is distributed in the frame area. Further, when the display panel 100 is a shaped screen to be slotted, the frame area includes a slotted area of the display panel 100. Since the package structure at the frame area including the grooved area is easily damaged, the inorganic barrier layer 120, the organic light-emitting material layer 130 and the thin film encapsulation structure 140 are disposed in the frame region, which can greatly improve the water and oxygen barrier of the display panel 100. Sexuality, which in turn increases package reliability and service life. Therefore, the display panel 100 is particularly suitable for a profiled screen that needs to be slotted.
  • the thin film encapsulation structure 140 includes a first inorganic layer (not shown), an organic layer (not shown), and a second inorganic layer (not shown) which are sequentially stacked on the pixel defining layer 110.
  • first inorganic layer and the second inorganic layer are a silicon nitride film, a silicon oxide film, an aluminum oxide film, a silicon oxynitride film or a silicon oxycarbide film.
  • the organic layer is an acrylate film, an epoxy resin film or a silicone resin film. Further, the organic layer is a polymethyl methacrylate film.
  • the display panel 100 further includes a base substrate 150, a thin film transistor (TFT), a planarization layer (not shown), an anode 170, and an organic light emitting unit (not shown).
  • the organic light emitting unit is disposed in each of the openings except the edge of the pixel defining layer 110.
  • the thin film transistor 160 is formed on the base substrate 150, and a planarization layer is formed on the thin film transistor 160.
  • the anode 170 is disposed on the planarization layer and at least partially exposes the planarization layer.
  • the pixel defining layer 110 is formed on the anode 170 and the exposed partial planarization layer.
  • the opening is provided on the pixel defining layer 110 and exposes a portion of the anode 170.
  • a buffer layer (not shown) may be formed on the base substrate 150.
  • the buffer layer may be formed on the entire surface of the base substrate 150 or may be formed by being patterned.
  • the buffer layer may have a suitable material including a material such as PET, PEN, polyacrylate, and/or polyimide to form a layered structure in a single layer or a multilayer stack.
  • the buffer layer may also be formed of silicon oxide or silicon nitride, or may comprise a composite layer of an organic material and/or an inorganic material.
  • a protective layer (not shown) covering the thin film transistor 160 is formed on the thin film transistor 160 before the planarization layer is formed on the thin film transistor 160.
  • the protective layer can be formed of silicon oxide, silicon nitride, and/or other suitable insulating organic or inorganic materials. Further, since the thin film transistor 160 has a complicated layer structure, it is generally necessary to form a planarization layer thereon to form a sufficiently flat top surface.
  • the anode 170 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In 2 O 3 ), indium gallium oxide (IGO), or aluminum zinc oxide (AZO).
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • ZnO zinc oxide
  • IGO indium gallium oxide
  • AZO aluminum zinc oxide
  • a display terminal including the display panel 100, a power module (not shown), a storage module (not shown), and a processing module (not shown).
  • the power module is used to power the display.
  • the storage module is used to store media information.
  • the processing module is electrically connected to the display screen, the power module, and the storage module to control the power supply of the power module, and display the media information on the display panel 100.
  • the display terminal can be a device such as a mobile phone, a television, a tablet, and a computer.
  • the display terminal adopts the above display panel 100, has good package reliability and long service life.
  • the display motherboard 100 of an embodiment includes a carrier substrate 110 and a plurality of array units 120 formed on the carrier substrate 110 .
  • the carrier substrate 110 may be a glass substrate.
  • the aligning unit 120 is substantially square, on which an annular cutting line 121 (indicated by a broken line) is defined.
  • the alignment unit 120 includes a display panel region 122 located within the cutting line 121, and an ablation region 123 located outside the cutting line 121.
  • the display panel area 122 refers to the area where the display panel remains after being cut along the cutting line 121.
  • the cutout area 123 refers to a peripheral area that is removed after cutting along the cutting line 121.
  • the display panel area 122 includes a display area C located in the middle and a non-display area B surrounding the display area C.
  • the barrier bank 130 is provided at the edge of the non-display area B.
  • the non-display area B refers to an area other than the display area C of the display panel area 122.
  • the edge of the non-display area B refers to the area on the non-display area B which is close to the cutting line 121.
  • the barrier bank 130 is disposed on the array substrate 124.
  • the barrier bank 130 functions to block the fluid organic material when forming the organic thin film layer of the thin film encapsulation structure.
  • the cutout area 123 is provided with a stress dispersion bank 140.
  • the stress dispersion bank 140 and the barrier bank 130 are respectively located on both sides of the cutting line 121, and the stress dispersion bank 140 serves to disperse stress during cutting.
  • the barrier bank 130 and the stress dispersion bank 140 are symmetrically disposed along the cutting line 121 as viewed from the cross section of the display mother board 100.
  • the "symmetric arrangement" herein means that the position and size of the barrier bank 130 and the stress dispersion bank 140 are axially symmetrically arranged along the cutting line 121.
  • the display panel area 122 includes an array substrate 124, a packaged device (not shown), and a thin film package structure 125.
  • the packaged device is disposed on the array substrate 124, and the packaged device is located in the right side region of the barrier bank 130 in FIG.
  • the thin film encapsulation structure 125 includes a plurality of film layers sealed on the outside of the packaged device, the plurality of film layers including at least one inorganic thin film layer and at least one organic thin film layer.
  • the organic thin film layer and the inorganic thin film layer are stacked, which is advantageous for the layer water barrier to the external water and oxygen.
  • the edge line 126 of the thin film encapsulation structure 125 is kept at a certain distance from the dicing line 121, so that the cutting tool (such as laser) can be prevented from being cut onto the thin film encapsulation structure 125 during cutting.
  • the cutting tool such as laser
  • the inorganic layer 150 is formed on the surface of the stress dispersion bank 140 away from the carrier substrate 110, as shown in FIG. After being disposed, the inorganic layer 150 on the stress dispersion bank 140 corresponds to the thin film encapsulation structure 125 on the barrier bank 130. When laser cutting is performed, the force at the cutting position is uniformly ensured, and the cutting stress can be greatly reduced. The thin film encapsulation structure 125 is damaged.
  • the number of layers of the inorganic layer 150 may be one layer, and the inorganic layer 150 may also include two or more inorganic sublayers stacked. Of course, a film layer of another material in place of the inorganic layer 150 may be formed on the surface of the stress dispersion bank 140 away from the carrier substrate 110.
  • the inorganic layer 150 may be an aluminum oxide layer, a silicon nitride layer, or an aluminum nitride layer. These kinds of inorganic layers are similar in material to the inorganic thin film layer of the thin film encapsulation structure 125, so that when laser cutting is performed, stress similar to the inorganic thin film layer of the thin film encapsulation structure 125 can be used for dispersion.
  • the material of the inorganic layer 150 is not limited to this.
  • the edge line 151 of the inorganic layer 150 is kept at a certain distance from the dicing line 121, so that a symmetrical structure can be formed with the thin film encapsulation structure 125, which is more advantageous for uniform stress during cutting.
  • the distance between the stress dispersion bank 140 and the cutting line 121 is from about 50 [mu]m to about 500 [mu]m.
  • the surface of the stress dispersion bank 240 may not be provided with an inorganic layer. At this time, only the stress dispersion bank 240 is provided in the cutout region 223. At the same time, a barrier bank 230 corresponding to the stress dispersion bank 240 is provided in the non-display area D of the display panel area. A thin film encapsulation structure 225 is formed on the barrier bank 230.
  • the packaged device is an Organic Light-Emitting Diode (OLED). Of course, the packaged device can also be other devices.
  • OLED Organic Light-Emitting Diode
  • the number of the barrier bank 130 and the stress dispersion bank 140 is one.
  • the number of the barrier bank 130 and the stress dispersion bank 140 is not limited thereto.
  • the number of barrier banks 330 is two; the number of stress dispersion banks 340 is two, and two barrier banks 330 and two stress dispersion banks 340 are respectively along the cutting line 321 Symmetrical settings.
  • the stress dispersion bank in the above embodiment is formed in a circle around the periphery of the cutting line, but it is not limited thereto. It is also possible to provide a stress dispersion bank at the periphery of the cutting line, or a plurality of discrete stress dispersion banks.
  • the cutting line 121 in the above embodiment includes a regular cutting line such as a screen cutting line.
  • the cutting line 121 in the above embodiment further includes an irregular cutting line, such as a cutting line of a grooved area (notch area) of the full screen.
  • the aligning unit 420 has a cutting line 421.
  • the cutting line 421 includes a U-shaped section 422, and the stress dispersion bank 440 is disposed adjacent to the U-shaped section 422.
  • the area enclosed by the U-shaped section 422 is the slotted area (notch area) 450 of the full screen.
  • the display panel area 424 includes a non-display area E and a display area F.
  • the edge of the non-display area E is provided with a barrier bank 430.
  • the resection zone 423 (including the notch zone) is provided with a stress dispersion bank 440.
  • the stress dispersion bank 440 is disposed on the periphery of the U-shaped segment 422, the cutting heat radiation and stress generated during the slot cutting of the U-shaped segment 422 are simultaneously transmitted to both sides, thereby reducing the film package structure. Cutting heat radiation and stress to prevent damage to the thin film package structure can improve the reliability of the film package.
  • a circle of stress dispersion banks may be simultaneously disposed in the cutting area 423, so that the position of the cutting line when the screen is cut is evenly applied to prevent damage of the film package structure. , thereby improving the reliability of the film package.
  • the position of the groove on the screen body and the sectional shape of the groove are not limited thereto.
  • a stress dispersion bank for performing stress dispersion can be provided inside the circular groove.
  • the barrier bank and the stress dispersion bank are provided on both sides of the cutting line, when the display mother board is cut, the generated cutting heat radiation and stress are simultaneously transmitted to both sides, thereby reducing
  • the cutting heat radiation and stress received by the thin film encapsulation structure prevent damage of the thin film encapsulation structure, improve the reliability of the thin film encapsulation, and are beneficial to the application.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

提供了一种显示面板(100)及显示终端。该显示面板(100)包括像素限定层(110)、无机阻隔层(120)、有机发光材料层(130)及薄膜封装结构(140)。像素限定层(110)设有呈阵列分布的多个开口。无机阻隔层(120)设于位于像素限定层(110)边缘的开口内，且其一侧设有多个间隔设置的第一凹槽。有机发光材料层(130)设于无机阻隔层(120)所在的开口内且形成于无机阻隔层(120)上。薄膜封装结构(140)设于像素限定层(110)上，薄膜封装结构(140)填充于第一凹槽中且包覆所述有机发光材料层(130)。

Description

显示面板、显示终端及显示母板
相关申请的交叉引用
本申请要求于2018年05月14日提交中国专利局，申请号为201820722043.4，发明名称为“显示面板及显示终端”的中国专利申请，及2018年05月14日提交中国专利局，申请号为201820714843.1，发明名称为“显示母板”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及显示技术领域，特别是涉及一种显示面板、显示终端及显示母板。
背景技术
目前显示面板采用薄膜封装结构包覆有机发光二极管(Organic Light-Emitting Diode,OLED)器件，以实现封装。薄膜封装结构的无机层膜层具有较高的致密性，可用于阻挡水氧入侵。然而薄膜封装结构的无机层膜层与蒸镀在器件阳极的有机发光材料接触不紧密，接触面间隙容易导致水氧入侵，因此薄膜封装结构的像素限定层容易出现水氧入侵等封装失效的问题，进而对OLED器件造成损伤，从而影响显示面板的使用寿命。
另外，柔性显示面板通常采用薄膜封装技术。显示面板的制作工艺一般包括将在显示母板上呈矩阵排列的显示面板进行切割。为了获得特殊形状的 显示面板，通常还需要再进行切割。然而，在切割的过程中，容易破坏薄膜封装结构，影响薄膜封装的可靠性。
发明内容
根据本申请的各种实施例，提供一种显示面板、显示终端及显示母板。
一种显示面板，包括：像素限定层，设有呈阵列分布的多个开口；无机阻隔层，设于位于所述像素限定层边缘的开口内，所述无机阻隔层的一侧设有多个间隔设置的第一凹槽；有机发光材料层，设于所述无机阻隔层所在的开口内且形成于所述无机阻隔层上；及薄膜封装结构，设于所述像素限定层上，所述薄膜封装结构填充于所述第一凹槽中且包覆所述有机发光材料层。
一种显示终端，含有上述显示面板。
一种显示母板，包括承载基板以及形成于承载基板上的若干个排列单元。每一排列单元定义有环形的切割线。排列单元包括位于切割线之内的显示面板区，及位于切割线之外的切除区。显示面板区包括显示区和位于显示区周围的非显示区。非显示区靠近切割线的边缘设有阻挡堤。切除区设有应力分散堤。
本申请的一个或多个实施例的细节在下面的附图和描述中提出。本申请的其它特征、目的和优点将从说明书、附图以及权利要求书变得明显。
附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请 的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图。
图1为一实施方式的显示面板的具备剖视图；
图2为一实施方式的显示母板的俯视图；
图3为图1中排列单元的俯视图；
图4为沿图1中A-A’的剖视图；
图5为另一实施方式的排列单元的截面示意图；
图6为另一实施方式的排列单元的截面示意图；
图7为另一实施方式的排列单元的俯视图。
具体实施方式
为了便于理解本申请，下面将参照相关附图对本申请进行更全面的描述。附图中给出了本申请的较佳实施例。但是，本申请可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本申请的公开内容的理解更加透彻全面。
需要说明的是，当元件被称为“固定于”另一个元件，它可以直接在另一个元件上或者也可以存在居中的元件。当一个元件被认为是“连接”另一个元件，它可以是直接连接到另一个元件或者可能同时存在居中元件。
除非另有定义，本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。本文中在本申请的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本申请。本文所使用的术语“和/或”包括一个或多个相关的所列项目的任意的和所有的组 合。
参阅图1，一实施方式的显示面板100，包括像素限定层110、无机阻隔层120、有机发光材料层130及薄膜封装结构140。像素限定层110设有呈阵列分布的多个开口(未标示)。无机阻隔层120设于位于像素限定层110边缘的开口内。有机发光材料层130设于无机阻隔层120所在的开口内且形成于无机阻隔层120上。无机阻隔层120朝向有机发光材料层130的一侧设有多个间隔设置的第一凹槽。薄膜封装结构140设于像素限定层110上。薄膜封装结构140填充于第一凹槽中且包覆有机发光材料层130。具体地，薄膜封装结构140设于有机发光材料层130背向无机阻隔层120的表面。
可以理解，像素限定层110边缘的开口一般用于设置像素，即形成用于显示的有机发光单元。
上述显示面板100利用为于像素限定层110边缘的开口，并在其内设置水氧阻隔性优于有机发光材料层130的无机阻隔层120，且将无机阻隔层120朝向有机发光材料层130的一侧设有多个间隔设置的第一凹槽，以形成凹凸结构，并采用薄膜封装结构140封装。如此提高了有机发光材料层130与无机阻隔层120和薄膜封装结构140中的无机层膜层的接触紧密性，增加了水氧侵入OLED器件内部的距离和难度，提高了水氧阻隔性能，从而提高了封装的可靠性及显示面板100的使用寿命。
具体在本实施例中，第一凹槽的形状为矩形。相应地，无机阻隔层120朝向有机发光材料层130的一侧在显示面板的纵向截面上的投影呈方形锯齿状。
具体在本实施例中，设于无机阻隔层120的第一凹槽内的有机发光材料 层130及设于无机阻隔层120的相邻第一凹槽之间的凸部上的有机发光材料层130为间断分布，即设于无机阻隔层120上的有机发光材料层130为不连续的。该有机发光材料层130所在区域可无需显示，该有机发光材料层130可在该开口内采用现有的蒸镀工艺而无需改变掩模板等其他工艺的情况下形成。
可以理解，在其他实施例中，有机发光材料层130朝向无机阻隔层120的一侧可为与无机阻隔层120相应的凹凸结构。即，设于无机阻隔层120的第一凹槽内的有机发光材料层130及设于无机阻隔层120的相邻第一凹槽之间的凸部上的有机发光材料层130是连续的。在一个实施例中，第一凹槽和凸部为曲线连接，如此无机阻隔层120朝向有机发光材料层130的一侧在显示面板110的纵向截面上的投影为波浪形，此时该有机发光材料层130所在区域可用于显示。即，在其他实施例中，无机阻隔层120朝向有机发光材料层130的一侧在显示面板的截面上的投影可为波浪形等其他形状，只要其设有多个间隔的凹槽结构即可。
在其中一个实施例中，薄膜封装结构140与有机发光材料层130接触的表面设有与多个第一凹槽相配合的多个第一凸起，如此薄膜封装结构140与有机发光材料层130接触的表面在显示面板100的纵向截面上的投影也呈凹凸结构。具体在本实施例中，薄膜封装结构140与有机发光材料层130接触的表面在显示面板100的截面上的投影呈方形锯齿状。可理解，在其他实施例中，薄膜封装结构140与有机发光材料层130接触的表面在显示面板100的截面上的投影可为波浪形。
进一步地，位于无机阻隔层120的第一凹槽内的有机发光材料层130的 厚度小于其所处第一凹槽的深度，薄膜封装结构140填充于第一凹槽中且位于有机发光材料层130上。如此使得薄膜封装结构140与有机发光材料层130接触的表面呈与无机阻隔层120相应的凹凸结构。且当有机发光材料层130为间断时，薄膜封装结构140与无机阻隔层120在第一凹槽内的侧壁处直接接触，由于薄膜封装结构140的最底层为无机封装层，无机封装层与无机阻隔层120在第一凹槽内的侧壁处接触紧密，因此可大大提高薄膜封装结构140的封装可靠性。
进一步地，无机阻隔层120为二氧化硅薄膜或氮化硅薄膜。具体地，无机阻隔层120可采用化学气相沉积方法形成。
进一步地，无机阻隔层120的厚度为0.5μm～1μm。若无机阻隔层120的厚度小于0.5μm，不便于设置第一凹槽，增加了工艺难度；若无机阻隔层120的厚度大于1μm，则不仅影响有机发光材料层130的空穴传输，不利于有机发光材料层130的正常发光，且会降低显示面板100的柔性，增加显示面板100的应力。
在其中一个实施例中，该显示面板100包括显示区域及围绕显示区域外周的边框区域，处在像素限定层110外缘的开口分布在该边框区域。进一步地，当显示面板100为需开槽的异形屏时，该边框区域包括显示面板100的开槽区。由于包含开槽区在内的边框区域处的封装结构容易损伤，因此在该边框区域设置上述无机阻隔层120、有机发光材料层130及薄膜封装结构140，可大大提高显示面板100的水氧阻隔性，进而提高其封装可靠性和使用寿命。因此，该显示面板100特别适用于需开槽的异形屏。
在其中一个实施例中，薄膜封装结构140包括依次层叠于像素限定层110 上的第一无机层(图未示)、有机层(图未示)及第二无机层(图未示)。
进一步地，第一无机层和第二无机层为氮化硅薄膜、氧化硅薄膜、氧化铝薄膜、氮氧化硅薄膜或碳氧化硅薄膜。
进一步地，有机层为丙烯酸酯薄膜、环氧树脂薄膜或硅树脂薄膜。进一步地，有机层为聚甲基丙烯酸甲酯薄膜。
进一步地，该显示面板100还包括衬底基板150、薄膜晶体管160(Thin-film transistor，TFT)、平坦化层(图未示)、阳极170及有机发光单元(图未示)。有机发光单元设于除像素限定层110边缘之外的各开口内。薄膜晶体管160形成于衬底基板150上，平坦化层形成于薄膜晶体管160上。阳极170设于平坦化层上且至少使部分平坦化层露出。像素限定层110形成于阳极170及露出的部分平坦化层上。上述开口设于像素限定层110上且使部分阳极170露出。
进一步地，在衬底基板150上形成薄膜晶体管160之前，可以在衬底基板150上形成诸如缓冲层(图未示)的其他层。缓冲层可以形成在衬底基板150的整个表面上，也可以通过被图形化来形成。缓冲层可以具有包括PET、PEN、聚丙烯酸酯和/或聚酰亚胺等材料中合适的材料，以单层或多层堆叠的形式形成层状结构。缓冲层还可以由氧化硅或氮化硅形成，或者可以包括有机材料和/或无机材料的复合层。
进一步地，在薄膜晶体管160上形成平坦化层之前，在薄膜晶体管160上形成覆盖薄膜晶体管160的保护层(图未示)。保护层可由氧化硅、氮化硅和/或其他合适的绝缘有机或无机材料形成。进一步地，由于薄膜晶体管160具有复杂的层结构，一般地有必要在其上形成平坦化层，以便形成足够平坦 的顶表面。
一般地，阳极170可以由氧化铟锡(ITO)、氧化铟锌(IZO)、氧化锌(ZnO)、氧化铟(In 2O 3)、氧化铟镓(IGO)或氧化铝锌(AZO)形成。可理解，一般阳极170为多个，且为阵列分布，对应多个有机发光单元设置用于单独控制各个有机发光单元显示，即用于单独控制各个像素显示。
还提供了一实施方式的显示终端，包括上述显示面板100、电源模块(图未示)、存储模块(图未示)及处理模块(图未示)。
电源模块用于为显示屏供电。存储模块用于存储媒体信息。处理模块与显示屏、电源模块和存储模块电性连接，用以控制电源模块的电能供给，并且将媒体信息显示于显示面板100。
该显示终端可为手机、电视、平板及电脑等设备。
该显示终端采用上述显示面板100，封装可靠性好，使用寿命长。
请参见图2～图3，一实施方式的显示母板100包括承载基板110以及形成于承载基板110上的若干个排列单元120。承载基板110可以为玻璃基板。
如图4所示，排列单元120大致为方形，其上定义有环形的切割线121(以虚线表示)。排列单元120包括位于切割线121之内的显示面板区122，及位于切割线121之外的切除区123。具体的，显示面板区122指的是沿切割线121切割之后保留的显示面板所在的区域。切除区123指的是沿切割线121切割之后去除的外围区域。
显示面板区122包括位于中部的显示区C和环绕于显示区C周围的非显示区B。非显示区B的边缘设有阻挡堤130。非显示区B指的是显示面板区122除显示区C以外的区域。非显示区B的边缘指的是非显示区B上靠近切 割线121的区域。阻挡堤130设置于阵列基板124上。阻挡堤130的作用是阻挡在形成薄膜封装结构的有机薄膜层时的流动性有机材料。
切除区123设有应力分散堤140。应力分散堤140与阻挡堤130分别位于切割线121的两侧，切割时应力分散堤140起到切割时分散应力的作用。
请参阅图4，从显示母板100的截面观察，阻挡堤130与应力分散堤140沿切割线121呈对称设置。此处的“对称设置”指的是阻挡堤130与应力分散堤140的位置与尺寸均沿切割线121呈轴对称设置。这样当进行激光切割时，切割位置受力均匀，可极大地减小切割应力，防止薄膜封装结构125受到损伤。
显示面板区122包括阵列基板124、被封装器件(未图示)以及薄膜封装结构125。被封装器件设置在阵列基板124上，被封装器件位于图4中阻挡堤130的右侧区域。
薄膜封装结构125包括密封在被封装器件外侧的多个膜层，多个膜层包括至少一层无机薄膜层和至少一层有机薄膜层。有机薄膜层与无机薄膜层层叠设置，这样有利于对外界的水氧起到层层阻隔的作用。
在图3所示的实施例中，薄膜封装结构125的边缘线126与切割线121之间保持一定的距离，这样能够避免切割时，切割工具(例如激光)切到薄膜封装结构125上而损坏薄膜封装结构125。
应力分散堤140远离承载基板110的表面形成有无机层150，如图4所示。这样设置后，应力分散堤140上的无机层150与阻挡堤130上的薄膜封装结构125相对应，当进行激光切割时，有效保证了切割位置受力均匀，可极大地减小切割应力，防止薄膜封装结构125受到损伤。
无机层150的层数可以为一层，无机层150亦可以包括两层或者两层以上叠加的无机子层。当然，还可以在应力分散堤140远离承载基板110的表面形成有代替无机层150的其他材质的膜层。无机层150可为氧化铝层、氮化硅层或者氮化铝层。这些种类的无机层与薄膜封装结构125的无机薄膜层的材质类似，因此当进行激光切割时，能够起到与薄膜封装结构125的无机薄膜层类似的应力作分散用。当然，无机层150的材质不限于此。
在图3所示的实施例中，无机层150的边缘线151与切割线121之间保持一定的距离，这样能够与薄膜封装结构125形成对称结构，更有利于切割时的受力均匀。在一个实施例中，应力分散堤140与切割线121之间的距离为约50μm～约500μm。此时，切割时的热辐射和应力能够传递至应力分散堤140上，故应力分散堤140能够起到分散切割热辐射和应力的作用，还有利于保持切割线121两边的应力大小一致。
如图5所示，在其他实施方式中，应力分散堤240的表面也可以不设置无机层。此时，在切除区223只设置有应力分散堤240。同时，在显示面板区的非显示区D设有与应力分散堤240对应的阻挡堤230。阻挡堤230上形成有薄膜封装结构225。
被封装器件为有机发光二极管(Organic Light-Emitting Diode，OLED)。当然，被封装器件还可以为其他器件。
上述实施方式中，阻挡堤130和应力分散堤140的个数均为一个。当然，阻挡堤130和应力分散堤140的个数均不限于此。请参见图6，在另一实施方式中，阻挡堤330的个数为两个；应力分散堤340的个数为两个，两个阻挡堤330与两个应力分散堤340分别沿切割线321呈对称设置。当进行激光 切割时，能够保证切割位置受力均匀，可极大地减小切割应力，防止薄膜封装结构的损伤。
此外需要说明的是，上述实施方式中的应力分散堤在切割线的外围围成一圈，但其不限于此。还可以在切割线的外围设置一段应力分散堤，或者多段不连续的应力分散堤。
此外，上述实施方式中的切割线121包括规则的切割线，例如屏体切割线。当然，上述实施方式中的切割线121还包括不规则的切割线，例如全面屏的开槽区域(notch区)的切割线。
请参见图7，在另一实施方式的显示母板中，排列单元420具有切割线421。其中，切割线421包括U型段422，应力分散堤440靠近U型段422设置。U型段422围成的区域即全面屏的开槽区域(notch区)450。
显示面板区424包括非显示区E和显示区F。非显示区E的边缘设有阻挡堤430。切除区423(包括notch区)设有应力分散堤440。
本实施方式中，由于在U型段422的外围设置应力分散堤440，因此在U型段422开槽切割时产生的切割热辐射和应力同时向两侧传递，从而减少了薄膜封装结构受到的切割热辐射和应力，防止薄膜封装结构损伤，能够提高薄膜封装的可靠性。
当然，在其他实施方式中，在上述实施方式的基础上，还可以同时在切除区423设置一圈应力分散堤，以使对屏体切割时的切割线位置受力均匀，防止薄膜封装结构损伤，从而提高薄膜封装的可靠性。
此外需要说明的是，在屏体上开槽的位置和开槽的截面形状均不以此为限。例如，还可以在屏体内部开一个圆形的槽。此时，可以在圆形槽的内侧 设置用以起到应力分散作用的应力分散堤。
应用上述实施方式中的显示母板，由于在切割线的两侧设有阻挡堤和应力分散堤，当对显示母板进行切割时，产生的切割热辐射和应力同时向两侧传递，从而减少了薄膜封装结构受到的切割热辐射和应力，防止薄膜封装结构损伤，能够提高薄膜封装的可靠性，有利于应用。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对本申请专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。

Claims (20)

  1. 一种显示面板，包括：
    像素限定层，设有呈阵列分布的多个开口；
    无机阻隔层，设于位于所述像素限定层边缘的开口内，所述无机阻隔层的一侧设有多个间隔设置的第一凹槽；
    有机发光材料层，设于所述无机阻隔层所在的开口内且形成于所述无机阻隔层上；及
    薄膜封装结构，设于所述像素限定层上，所述薄膜封装结构填充于所述第一凹槽中且包覆所述有机发光材料层。
  2. 如权利要求1所述的显示面板，其中所述薄膜封装结构与所述有机发光材料层接触的表面设有与所述多个第一凹槽相配合的多个第一凸起。
  3. 如权利要求2所述的显示面板，其中所述有机发光材料层的厚度小于所述第一凹槽的深度。
  4. 如权利要求2所述的显示面板，其中所述无机阻隔层朝向所述有机发光材料层的一侧在所述显示面板的截面上的投影呈方形锯齿状；所述薄膜封装结构与所述有机发光材料层接触的表面在所述显示面板的纵向截面上的投影呈方形锯齿状。
  5. 如权利要求1所述的显示面板，其中所述无机阻隔层为二氧化硅薄膜或氮化硅薄膜。
  6. 如权利要求1所述的显示面板，其中所述无机阻隔层的厚度为约0.5μm～约1μm。
  7. 如权利要求1所述的显示面板，其中所述薄膜封装结构包括依次层叠 设置于所述像素限定层上的第一无机层、有机层及第二无机层。
  8. 如权利要求1所述的显示面板，其中所述显示面板包括显示区域及围绕所述显示区域设置的边框区域，位于所述像素限定层边缘的所述开口分布在所述边框区域。
  9. 如权利要求8所述的显示面板，其中所述边框区域包括开槽区。
  10. 一种显示终端，包括如权利要求1所述的显示面板。
  11. 一种显示母板，包括：
    承载基板；及
    若干个排列单元，阵列排布于所述承载基板上，每一排列单元定义有环形的切割线，所述排列单元包括位于所述切割线之内的显示面板区，及位于所述切割线之外的切除区；所述显示面板区包括显示区和位于所述显示区周围的非显示区，所述非显示区靠近所述切割线的边缘设有阻挡堤；所述切除区设有应力分散堤。
  12. 根据权利要求11所述的显示母板，其特征在于，所述应力分散堤环绕所述切割线设置。
  13. 根据权利要求11所述的显示母板，其特征在于，所述切割线包括U型段，所述应力分散堤靠近所述U型段设置。
  14. 根据权利要求11所述的显示母板，其特征在于，在所述显示母板的截面上，所述阻挡堤与所述应力分散堤沿所述切割线呈对称设置。
  15. 根据权利要求11所述的显示母板，其特征在于，所述应力分散堤远离承载基板的表面形成有无机层。
  16. 根据权利要求15所述的显示母板，其特征在于，所述无机层为氧化 铝层、氮化硅层或者氮化铝层。
  17. 根据权利要求11所述的显示母板，其特征在于，所述阻挡堤的个数为两个；所述应力分散堤的个数为两个，两个所述阻挡堤与两个所述应力分散堤分别沿所述切割线呈对称设置。
  18. 根据权利要求11所述的显示母板，其特征在于，所述应力分散堤与所述切割线之间的距离为约50μm～约500μm。
  19. 根据权利要求11所述的显示母板，其特征在于，所述显示面板区包括：
    阵列基板；
    被封装器件，设置在所述阵列基板上；以及
    薄膜封装结构，包括密封在所述被封装器件外侧的多个膜层，所述多个膜层包括至少一层无机薄膜层和至少一层有机薄膜层，所述有机薄膜层与所述无机薄膜层层叠设置。
  20. 根据权利要求19所述的显示母板，其特征在于，所述被封装器件为有机发光二极管。
PCT/CN2018/116525 2018-05-14 2018-11-20 显示面板、显示终端及显示母板 Ceased WO2019218629A1 (zh)

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