WO2019214378A1 - 显示基板、其制造方法和显示装置 - Google Patents

显示基板、其制造方法和显示装置 Download PDF

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Publication number
WO2019214378A1
WO2019214378A1 PCT/CN2019/081463 CN2019081463W WO2019214378A1 WO 2019214378 A1 WO2019214378 A1 WO 2019214378A1 CN 2019081463 W CN2019081463 W CN 2019081463W WO 2019214378 A1 WO2019214378 A1 WO 2019214378A1
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Prior art keywords
layer
pixel
electroluminescent
display substrate
color
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PCT/CN2019/081463
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English (en)
French (fr)
Chinese (zh)
Inventor
王灿
张粲
陈小川
玄明花
岳晗
杨明
丛宁
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Application filed by BOE Technology Group Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to JP2020534873A priority Critical patent/JP7536641B2/ja
Priority to US16/604,768 priority patent/US11404486B2/en
Priority to EP25183075.8A priority patent/EP4661640A3/en
Priority to EP19800317.0A priority patent/EP3792977B1/en
Publication of WO2019214378A1 publication Critical patent/WO2019214378A1/zh
Anticipated expiration legal-status Critical
Priority to US17/664,809 priority patent/US12156450B2/en
Priority to US17/664,801 priority patent/US12063833B2/en
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H10K50/131—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/50—OLEDs integrated with light modulating elements, e.g. with electrochromic elements, photochromic elements or liquid crystal elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80517—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/32—Stacked devices having two or more layers, each emitting at different wavelengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers

Definitions

  • the present application relates to the field of display technology, and in particular to a display substrate, a method of manufacturing the same, and a display device.
  • OLED Organic Light-Emitting Diode
  • An OLED display substrate generally includes a substrate substrate and a plurality of OLEDs disposed on the substrate. Further, a color resist layer is further disposed on a side of the plurality of OLEDs away from the substrate. Illustratively, such multiple OLEDs are capable of emitting white light.
  • the color resist layer includes a plurality of color resist blocks in one-to-one correspondence with the plurality of OLEDs.
  • the plurality of color block blocks include a red color block, a green color block, and a blue color block. Each color block only allows light of a specified wavelength of incident white light to pass through. For example, the red color block only allows red light to pass through, the green color block only allows green light to pass through, and the blue color block only allows blue light to pass through, thereby causing the OLED display substrate to emit colored light.
  • the color purity of the color light emitted from the OLED display substrate is low, resulting in poor display performance of the OLED display substrate.
  • a display substrate includes: a substrate substrate, a plurality of pixel structures on the substrate substrate, and a color resist layer on a side of the plurality of pixel structures away from the substrate substrate.
  • the color resist layer includes a plurality of color resist blocks, each of the color resist blocks corresponding to one or more of the plurality of pixel structures, and by the plurality of pixel structures The light emitted by each pixel structure has the same color as its corresponding color block.
  • each pixel structure comprises a plurality of electroluminescent structures in series.
  • each of the pixel structures includes a first luminescent layer, a second luminescent layer, a first electrical connection layer, and a third luminescent layer disposed on the substrate substrate in sequence.
  • the plurality of electroluminescent structures comprise a first electroluminescent structure and a second electroluminescent structure.
  • the first electroluminescent structure includes the first luminescent layer and the second luminescent layer
  • the second electroluminescent structure includes the third luminescent layer
  • the first electroluminescent structure and The second electroluminescent structures are connected in series by the first electrical connection layer.
  • the first luminescent layer comprises a red luminescent layer
  • the second luminescent layer comprises a green luminescent layer
  • the third luminescent layer comprises a blue luminescent layer.
  • each of the pixel structures includes a first luminescent layer, a second electrical connection layer, a second luminescent layer, a first electrical connection layer, and a third luminescent layer disposed on the substrate substrate in sequence.
  • the plurality of electroluminescent structures comprise a first electroluminescent structure, a second electroluminescent structure, and a third electroluminescent structure.
  • the first electroluminescent structure includes the first luminescent layer
  • the second electroluminescent structure includes the second luminescent layer
  • the third electroluminescent structure includes the third luminescent layer.
  • the first electroluminescent structure and the second electroluminescent structure are connected in series by the second electrical connection layer, and the second electroluminescent structure and the third electroluminescent structure pass the An electrical connection layer is connected in series.
  • each of the color resist blocks corresponds to a corresponding one of the plurality of pixel structures
  • each of the pixel units further includes a first electrode and a second electrode, wherein the first electrode, the plurality of electroluminescent structures, and the second electrode are sequentially disposed on the base substrate.
  • the first electrode includes a reflective conductive layer
  • the second electrode includes a transflective layer, and a wavelength of light emitted by the pixel structure and the reflective conductive layer and the transflective layer The distance between them is positively related.
  • the first electrode further includes a first transparent conductive layer, an insulating layer and a second transparent conductive layer, wherein the first transparent conductive layer, the reflective conductive layer, the insulating layer, and the first Two transparent conductive layers are sequentially disposed on the base substrate.
  • the second transparent conductive layer is electrically connected to the reflective conductive layer through a via hole in the insulating layer, and a wavelength of light emitted by the pixel structure and a thickness of the insulating layer in the first electrode Positive correlation.
  • the first electrode further includes a first transparent conductive layer and a second transparent conductive layer, wherein the first transparent conductive layer, the reflective conductive layer and the second transparent conductive layer are sequentially disposed in the On the substrate substrate, and the wavelength of light emitted by the pixel structure is positively correlated with the thickness of the second transparent conductive layer in the first electrode.
  • each pixel structure further includes a functional film layer between the first electrode and the second electrode, wherein the functional film layer includes an electron injection layer, an electron transport layer, a hole injection layer, and At least one of the hole transport layers, and the wavelength of light emitted by the pixel structure is positively correlated with the thickness of the functional film layer in the pixel structure.
  • the functional film layer includes an electron injection layer, an electron transport layer, a hole injection layer, and At least one of the hole transport layers, and the wavelength of light emitted by the pixel structure is positively correlated with the thickness of the functional film layer in the pixel structure.
  • a distance between the reflective conductive layer and the transflective layer Where k is a coefficient being positive integer, ⁇ is the wavelength of light emitted by the pixel structure, and n is the average refraction of the medium between the reflective conductive layer and the transflective layer Rate, and ⁇ is the angle of reflection of light emitted by the pixel structure on the reflective conductive layer.
  • the plurality of pixel structures comprise a first pixel structure for emitting light of a first color, a second pixel structure for emitting light of a second color, and a third pixel structure for emitting light of a third color.
  • the coefficient k is the same in the first pixel structure, in the second pixel structure, and in the third pixel structure.
  • the plurality of pixel structures comprise a first pixel structure for emitting light of a first color, a second pixel structure for emitting light of a second color, and a third pixel structure for emitting light of a third color.
  • the coefficient k in the first pixel structure and the second pixel structure are the same, but smaller than the coefficient k in the third pixel structure (smaller by one).
  • a method of manufacturing a display substrate includes the steps of: providing a substrate; forming a plurality of pixel structures on the substrate; and forming a color resist layer on a side of the plurality of pixel structures away from the substrate.
  • the color resist layer includes a plurality of color resist blocks, each of the color resist blocks corresponding to one or more of the plurality of pixel structures, and light emitted by each of the plurality of pixel structures has The same color as its corresponding color block.
  • the step of forming a plurality of pixel structures on the base substrate comprises: sequentially forming a first electroluminescent structure, a first electrical connection layer, and a second on the substrate substrate for each pixel structure An electroluminescent structure, wherein the first electroluminescent structure comprises a first luminescent layer and a second luminescent layer, the second electroluminescent structure comprises a third luminescent layer, and the first electroluminescent structure and The second electroluminescent structures are connected in series by the first electrical connection layer.
  • the first luminescent layer comprises a red luminescent layer
  • the second luminescent layer comprises a green luminescent layer
  • the third luminescent layer comprises a blue luminescent layer.
  • the step of forming a plurality of pixel structures on the substrate substrate comprises: sequentially forming a first electroluminescent structure, a second electrical connection layer, and a second on the substrate substrate for each pixel structure An electroluminescent structure, a first electrical connection layer, and a third electroluminescent structure, wherein the first electroluminescent structure comprises a first emissive layer, the second electroluminescent structure comprises a second emissive layer, The third electroluminescent structure includes a third luminescent layer, the first electroluminescent structure and the second electroluminescent structure are connected in series by the second electrical connection layer, and the second electroluminescent structure and The third electroluminescent structures are connected in series by the first electrical connection layer.
  • a display device wherein the display device comprises the display substrate described in any of the above embodiments.
  • FIG. 1 is a schematic structural view of a display substrate according to an embodiment of the present disclosure
  • FIG. 2 is a schematic structural view of a display substrate according to an embodiment of the present disclosure
  • Figure 3 is a graph showing the relationship between the intensity of light emitted from the display substrate shown in Figure 2 and the wavelength;
  • FIG. 4 is a color gamut diagram of light emitted from the display substrate shown in FIG. 2;
  • FIG. 5 is a schematic structural view of a display substrate according to an embodiment of the present disclosure.
  • Figure 6 is a graph showing the relationship between the intensity of light emitted from the display substrate shown in Figure 5 and the wavelength;
  • Figure 7 is a color gamut diagram of light emitted from the display substrate shown in Figure 5;
  • FIG. 8 is a schematic structural view of a display substrate according to an embodiment of the present disclosure.
  • FIG. 9 is a schematic structural view of a display substrate according to an embodiment of the present disclosure.
  • FIG. 10 is a schematic structural view of a display substrate according to an embodiment of the present disclosure.
  • FIG. 11 is a schematic structural view of a display substrate according to the related art.
  • FIG. 12 is a flow chart of a method of manufacturing a display substrate in accordance with an embodiment of the present disclosure
  • FIG. 13 is a flowchart of a method of manufacturing a display substrate according to an embodiment of the present disclosure
  • FIG. 14 is a schematic structural view of a display substrate during a manufacturing process according to an embodiment of the present disclosure
  • FIG. 15 is a schematic structural view of a display substrate during a manufacturing process according to an embodiment of the present disclosure.
  • FIG. 16 is a schematic structural view of a display substrate during a manufacturing process according to an embodiment of the present disclosure
  • FIG. 17 is a schematic structural view of a display substrate during a manufacturing process according to an embodiment of the present disclosure.
  • FIG. 18 is a schematic structural view of a display substrate during a manufacturing process according to an embodiment of the present disclosure
  • FIG. 19 is a schematic structural view of a display substrate during a manufacturing process in accordance with an embodiment of the present disclosure.
  • the display device has the characteristics of fast response, full curing, and self-illumination, and has been widely used.
  • the display device can be applied to the field of flexible display, transparent display, and microdisplay.
  • the application of the display device in the field of microdisplay may include: an augmented reality (AR) display, a head-mounted display, a stereoscopic display mirror, a glasses-type display, and the like.
  • AR augmented reality
  • display devices are generally required to have higher color purity, brightness (eg, brightness greater than 1500 nits), and color gamut.
  • Embodiments of the present disclosure provide a display substrate and a display device including the display substrate. The display substrate can be applied not only to the field of microdisplay but also to other display fields. In this regard, embodiments of the present disclosure are not limited.
  • FIG. 1 is a schematic structural view of a display substrate according to an embodiment of the present disclosure.
  • the display substrate 0 may include a base substrate 01.
  • a plurality of pixel structures 02 are disposed on the substrate substrate 01, and a color resist layer 03 is further disposed on a side of the plurality of pixel structures 02 away from the substrate substrate 01.
  • the color resist layer 03 includes a plurality of color resist blocks 031 which are disposed in a pair with the plurality of pixel structures 02.
  • Each of the plurality of pixel structures 02 emits light of one color.
  • the color of the light emitted by the pixel structure 02 is the same as the color of the corresponding color block 031.
  • each color block 031 corresponds to one color. This means that the color block 031 only allows light of its corresponding color to pass through, and light transmission with its non-corresponding color is prohibited.
  • the color of the color block 031 is also the color of the light corresponding to the color block.
  • a display substrate including a plurality of pixel structures and a color resist layer, and each of the pixel structures is configured to emit the same color as a color resist block disposed corresponding thereto Light. Therefore, among the light emitted by the pixel structure, the light that can pass through the color block blocks occupies a larger portion, so that the color purity of the display substrate is higher and the display effect of the display substrate is improved.
  • the base substrate may be made of silicon.
  • the base substrate may alternatively be made of other materials such as glass.
  • embodiments of the present disclosure are not particularly limited.
  • the pixel structure 02 in the display substrate 0 can also be designed as a microcavity OLED. That is, the pixel structure 02 may include a first electrode, a plurality of electroluminescent structures, and a second electrode that are sequentially disposed on the base substrate.
  • a first electrode such as an anode
  • a second electrode such as a cathode
  • the two electrodes can form a resonant cavity.
  • the distance between the reflective conductive layer and the transflective layer is the cavity length of the resonant cavity.
  • the wavelength of the light emitted by the pixel structure is positively correlated with the cavity length of the resonant cavity in the pixel structure.
  • the light emitted by all the light-emitting layers in the pixel structure 02 can be combined to form white light.
  • the resonant cavity is capable of filtering out light of a certain color in white light for energy amplification, and energy-attenuating other light different from the color.
  • the pixel structure 02 is caused to emit light of the color, and the brightness of the light emitted by the pixel structure 02 is higher.
  • the pixel structure 02 can emit light of the same color as the color block 031 disposed corresponding to the pixel structure 02 through the resonant cavity.
  • the pixel structure 02 in the display substrate 0 may comprise a tandem OLED, which is for example composed of a plurality of electroluminescent structures. It should be noted that the luminous efficiency and the luminous power of the tandem OLED are relatively high. Therefore, the luminous efficiency and the luminous power of the display substrate 0 provided by the embodiments of the present disclosure are also relatively high.
  • the display substrate may have various implementations, and five of the implementations are exemplified hereinafter.
  • FIG. 2 is a schematic structural view of a display substrate in accordance with an embodiment of the present disclosure.
  • Figure 2 illustrates one implementation of a display substrate.
  • the pixel structure 02 in the display substrate 0 may include a first electrode 021, a red light emitting layer 022, a green light emitting layer 023, a first electrical connection layer 024, a blue light emitting layer 025, and a second, which are sequentially disposed on the base substrate 01.
  • Electrode 026 is a schematic structural view of a display substrate in accordance with an embodiment of the present disclosure.
  • Figure 2 illustrates one implementation of a display substrate.
  • the pixel structure 02 in the display substrate 0 may include a first electrode 021, a red light emitting layer 022, a green light emitting layer 023, a first electrical connection layer 024, a blue light emitting layer 025, and a second, which are sequentially disposed on the base substrate 01.
  • Electrode 026 is sequentially disposed on the base substrate 01.
  • one of the first electrode 021 and the second electrode 026 may be a cathode and the other electrode may be an anode.
  • the first electrode 021 is an anode
  • the second electrode 026 It is a cathode.
  • a resonant cavity can be formed by the first electrode 021 and the second electrode 026 in the OLED.
  • the cavity length d of the cavity in the OLED is related to the wavelength ⁇ of the light emitted by the OLED.
  • the wavelength of the light is related to the color of the light
  • the cavity length of the cavity is related to the color of the light emitted by the OLED. In such a case, the adjustment of the color of the light emitted by the OLED can be achieved by adjusting the cavity length d of the resonant cavity.
  • the wavelength of light emitted by the pixel structure is positively correlated with the cavity length of the resonant cavity in the pixel structure. This means that the cavity lengths of the resonant cavities in the two pixel structures 02 emitting different color lights are different.
  • the cavity length d of the resonant cavity in the pixel structure 02 can be adjusted by adjusting the thickness of the insulating layer in the first electrode 021 of the pixel structure 02.
  • the wavelength of the light emitted by the pixel structure will be positively correlated with the thickness of the insulating layer in the pixel structure.
  • the color of the light emitted by the pixel structure ie, the wavelength, in particular, the center wavelength, can be adjusted by the choice of the cavity length of the resonant cavity.
  • ⁇ represents the center wavelength or the dominant wavelength of the outgoing light.
  • the first electrode 021 may include a first transparent conductive layer 0211, a reflective conductive layer 0212, an insulating layer 0213, and a second transparent conductive layer 0214 which are sequentially disposed on the base substrate 01.
  • the second transparent conductive layer 0214 is electrically connected to the reflective conductive layer 0212 through a via hole (not shown in FIG. 2) in the insulating layer 0213.
  • Both the first transparent conductive layer 0211 and the second transparent conductive layer 0214 may be made of indium tin oxide.
  • the reflective conductive layer 0212 can be made of silver.
  • the insulating layer 0213 may be made of silicon dioxide.
  • the transflective layer in the second electrode 026 may include a transflective material obtained by doping with magnesium silver.
  • the thickness of the insulating layer 0213 in the two pixel structures 02 emitting different color lights is different, that is, the cavity lengths of the resonant cavities in the two pixel structures 02 emitting different color lights are different.
  • the corresponding coefficient k can be selected as any positive integer.
  • the appropriate cavity length can be selected according to the wavelength of the light emitted by the actually required pixel structure.
  • the cavity length of the resonant cavity in the pixel structure 02 may be selected to be a certain coefficient k on the premise that the pixel structure 02 has been determined to emit light of a certain color by the cavity effect. Corresponding cavity length.
  • a plurality of pixel structures 02 in the display substrate may include a red light pixel structure 02 for emitting red light, a green light pixel structure 02 for emitting green light, and a blue light emitting light.
  • the coefficient k corresponding to the cavity length of the first cavity in the red pixel structure 02 may be set to i
  • the coefficient k corresponding to the cavity length of the second cavity in the green pixel structure 02 may also be set.
  • the coefficient k corresponding to the cavity length of the third resonant cavity in the blue pixel structure 02 can also be set to i, where i ⁇ 1.
  • the coefficient k corresponding to the cavity length of the resonant cavity is i.
  • the thickness of the insulating layer in the red pixel structure 02 may be 145 nm
  • the thickness of the insulating layer in the green pixel structure 02 may be 90 nm
  • the insulating layer in the blue pixel structure 02 The thickness can be 45 nanometers.
  • each pixel structure 02 may further include a first hole injection layer (HIL) 027, a first hole transport layer (HTL) 028, and a first electron transport layer.
  • HIL hole injection layer
  • HTL hole transport layer
  • EIL electron injection layer
  • a thin film encapsulation (TFE) layer (not shown in FIG. 2) is further disposed between the plurality of pixel structures 02 and the color resist layer 03, and the color resist layer 03 further includes the respective color block blocks.
  • Black matrix pattern 032 between 031.
  • the thickness of the first transparent conductive layer 0211 may be 80 angstroms
  • the thickness of the reflective conductive layer 0212 may be 1000 angstroms
  • the thickness of the second transparent conductive layer 0214 may be 80 angstroms
  • the thickness of the first hole injection layer 027 may be
  • the thickness of the first hole transport layer 028 may be 150 angstroms
  • the thickness of the red light emitting layer 022 may be 100 angstroms
  • the thickness of the green light emitting layer 023 may be 300 angstroms
  • the thickness of the first electron transport layer 029 may be 100 angstroms.
  • the first electrical connection layer 024 may have a thickness of 150 angstroms
  • the second hole injection layer B 1 may have a thickness of 100 angstroms
  • the second hole transport layer B2 may have a thickness of 100 angstroms
  • the blue light-emitting layer 025 The thickness of the second electron transport layer B3 may be 300 angstroms
  • the thickness of the electron injection layer B4 may be 100 angstroms
  • the thickness of the second electrode 026 may be 120 angstroms.
  • each of the pixel structures 02 may include a tandem OLED (also referred to as a stacked OLED).
  • a red light-emitting layer 022 is used to emit red light
  • a green light-emitting layer 023 is used to emit green light
  • a blue light-emitting layer 025 is used to emit blue light.
  • the red luminescent layer 022 and the green luminescent layer 023 are superposed to form an electroluminescent structure, and the blue luminescent layer 025 independently forms an electroluminescent structure.
  • the two electroluminescent structures are electrically connected by a first electrical connection layer 024 between the green light-emitting layer 023 and the blue light-emitting layer 025 to achieve a series connection between the two electroluminescent structures. That is, the red luminescent layer and the green luminescent layer form a first electroluminescent structure, the blue luminescent layer forms a second electroluminescent structure, and the first electroluminescent structure and the second electroluminescent structure are electrically connected through the first The layers are connected in series.
  • a graph as shown in Fig. 3 can be obtained.
  • the horizontal axis represents the wavelength of light in nanometers
  • the vertical axis represents the intensity of light (dimensionless).
  • the wavelength of red light emitted from the display substrate is concentrated near 600 nm
  • the wavelength of green light is concentrated near 520 nm
  • the wavelength of blue light is concentrated near 450 nm.
  • the simulation of the display substrate provided in Fig. 2 can also be used to derive the parameters as shown in Table 1.
  • Table 1 the color coordinate CIEx (ie: the color gamut chart developed by CIE) in the colorimetric standard established by the Commission Internationale de L'Eclairage (CIE) is the reddest light emitted by the display substrate.
  • the color coordinate x) is 0.650
  • CIEy ie, the color coordinate y in the color gamut chart defined by CIE
  • CIEY ie, the brightness in the colorimetric standard established by CIE
  • the CIEx of the greenest light emitted from the display substrate was 0.117
  • CIEy was 0.771
  • CIEY was 79.6
  • the bluest light emitted from the display substrate had a CIEx of 0.146, a CIEy of 0.032, and a CIEY of 66.8.
  • the color gamut of the display substrate in the color gamut chart defined by CIE can be obtained (such as the color gamut A1 in FIG. 4). It can be seen that the display substrate provided by the embodiment of the present disclosure can achieve a color gamut of 120% in the color gamut standard established by the National Television Standards Committee (NTSC).
  • NTSC National Television Standards Committee
  • the transmittance of the color block may be set to be 50% to 60%, or higher than 60%.
  • the embodiments of the present disclosure are not particularly limited. Thereby, the total brightness of all the light emitted from the display substrate can reach 2,500 nits.
  • the transmittance of the color block is often low, thus resulting in a low total luminance of all light emitted from a conventional display substrate, for example, typically 300 nits.
  • the brightness, color gamut, and color purity of the display substrate provided are relatively high.
  • the display substrate can be made to satisfy, for example, the requirements of the display device in the field of microdisplay.
  • FIG. 5 is a schematic structural view of a display substrate according to an embodiment of the present disclosure.
  • Figure 5 shows a second implementation of a display substrate.
  • the coefficient k corresponding to the cavity length of the first cavity in the red pixel structure 02 may be j, and green light.
  • the coefficient k corresponding to the cavity length of the second cavity in the pixel structure 02 may be j
  • the coefficient k corresponding to the cavity length of the third cavity in the blue pixel structure 02 may be j+1, where j ⁇ 1 .
  • i and j may or may not be equal.
  • the thickness of the insulating layer in the red pixel structure 02 may be 90 nm
  • the thickness of the insulating layer in the green pixel structure 02 may be 18 nm
  • the thickness of the insulating layer in the blue pixel structure 02 may be 120 nm.
  • the horizontal axis represents the wavelength of light in nanometers
  • the vertical axis represents the intensity of light in units of W ⁇ m -2 ⁇ nm -1 ⁇ sr -1 .
  • the wavelength of red light emitted from the display substrate is concentrated near 620 nm
  • the wavelength of green light is concentrated near 520 nm
  • the wavelength of blue light is concentrated near 460 nm.
  • the simulation of the display substrate provided in Fig. 5 can also be used to derive the parameters as shown in Table 2.
  • Table 2 the CIEx of the reddish light emitted from the display substrate is 0.673, CIEy is 0.341, and CIEY is 67.3; the CIEx of the greenest light emitted from the display substrate is 0.157, CIEy is 0.740, and CIEY is 68.9.
  • the CIEx of the bluest light emitted by the display substrate is 0.142, CIEy is 0.048, and CIEY is 26.8.
  • the color gamut of the display substrate in the color gamut chart defined by CIE (such as the color gamut A2 in Fig. 7) can be obtained. It can be seen that, in accordance with embodiments of the present disclosure, the display substrate provided can achieve a color gamut of 115% in the color gamut standard established by NTSC. In addition, the total brightness of all light emitted from the display substrate can reach 2200 nits.
  • FIG. 8 is a schematic structural view of a display substrate according to an embodiment of the present disclosure.
  • Figure 8 shows a third implementation of a display substrate.
  • the plurality of electroluminescent structures in each of the pixel structures 02 may have different arrangements.
  • the red light-emitting layer 022 independently forms one electroluminescent structure
  • the green light-emitting layer 023 independently forms another electroluminescent structure
  • the blue light-emitting layer 025 is formed independently.
  • a second electrical connection layer B5 may be disposed between the red light-emitting layer 022 and the green light-emitting layer 023, and the red light-emitting layer 022 may be electrically connected to the green light-emitting layer 023 through the second electrical connection layer B5.
  • the green light-emitting layer 023 can be electrically connected to the blue light-emitting layer 025 through the first electrical connection layer 024, and the series connection of the three electroluminescent structures is finally realized. That is, in the embodiment shown in FIG. 5, the red light-emitting layer forms a first electroluminescent structure, the green light-emitting layer forms a second electroluminescent structure, and the blue light-emitting layer forms a third electroluminescent structure. Moreover, the first electroluminescent structure and the second electroluminescent structure are connected in series by the second electrical connection layer, and the second electroluminescent structure and the third electroluminescent structure are connected in series by the first electrical connection layer.
  • the second electrical connection layer B5 may include a second electron transport layer B6, a third hole injection layer B7, and a third hole transport layer B8 which are sequentially stacked, wherein the electron transport layer is adjacent to the red light emitting layer. 022 settings.
  • the second electron transport layer B6 may have a thickness of 300 angstroms
  • the third hole injection layer B7 may have a thickness of 100 angstroms
  • the third hole transport layer B8 may have a thickness of 150 angstroms.
  • the color gamut achieved by the display substrate in the color gamut standard established by NTSC By simulating the display substrate provided in FIG. 8, the color gamut achieved by the display substrate in the color gamut standard established by NTSC, the total brightness of all light emitted by the display substrate, and the color purity of light emitted by the display substrate can be obtained. . Obviously, in the above third implementation manner, the color gamut, the total brightness, and the color purity of the display substrate are relatively high.
  • FIG. 9 is a schematic structural view of a display substrate according to an embodiment of the present disclosure.
  • Figure 9 shows a fourth implementation of a display substrate.
  • the first electrode 021 in each pixel structure 02 may not include an insulating layer, but only includes the substrate substrate 01 in order.
  • the first transparent conductive layer 0211, the reflective conductive layer 0212 and the second transparent conductive layer 0214 are disposed.
  • the thickness of the second transparent conductive layer 0214 in the first electrode 021 of the pixel structure 02 can be adjusted. It is apparent that the thickness of the second transparent conductive layer 0214 in the two pixel structures 02 emitting different color lights is different. At this point, the wavelength of light emitted from the pixel structure will be positively correlated with the thickness of the second transparent conductive layer in the pixel structure.
  • the thickness of the second transparent conductive layer in the red light pixel structure 02 may be 100 nanometers
  • the thickness of the second transparent conductive layer in the green light pixel structure 02 may be 26 nanometers
  • the transparent conductive layer may have a thickness of 130 nm.
  • FIG. 10 is a schematic structural view of a display substrate according to an embodiment of the present disclosure.
  • Figure 10 shows a fifth implementation of a display substrate.
  • the thickness of the insulating layer 0213 in the two pixel structures 02 emitting light of different colors may be the same.
  • the electron injection layer B4, the electron transport layer (such as the first electron transport layer 029 and the second electron transport layer B3), the hole injection layer (such as the first hole injection layer 027 and the second hole injection) is a functional film layer.
  • the functional film layers of the two OLEDs emitting different color lights can be designed to have different thicknesses.
  • the functional film layer may be selected, for example, as the electron injection layer B4.
  • the thickness of the electron injection layer B4 can be designed to be different for two OLEDs emitting different colors of light.
  • the functional film layer may further include other film layers (such as the first hole injection layer 027 and the like).
  • the embodiments of the present disclosure are not particularly limited.
  • the display substrate provided by the embodiment of the present disclosure is comparatively analyzed with the display substrate in the related art.
  • an OLED display substrate may include two types, wherein an OLED display substrate includes a substrate substrate, a plurality of OLEDs disposed on the substrate substrate, and a plurality of OLEDs disposed away from the substrate a color resist layer on one side of the substrate.
  • an OLED display substrate includes a substrate substrate, a plurality of OLEDs disposed on the substrate substrate, and a plurality of OLEDs disposed away from the substrate a color resist layer on one side of the substrate.
  • a plurality of OLEDs are capable of emitting white light
  • the color resist layer includes a plurality of color resist blocks in one-to-one correspondence with the plurality of OLEDs.
  • the light emitted by the OLED is white light
  • the amount of light that can pass through the color block in white light is relatively small, for example, the red light that can pass through the red color block in white light is less, and the white light can The green light through the green color block is less, or the blue light in the white light can pass through the blue color block, so the color of light emitted from the display substrate is generally shallow, resulting in the color purity of the light emitted by the display substrate. Lower.
  • the color of the light emitted by the OLED is the same as the color of the correspondingly disposed color block.
  • the amount of light that can pass through the color block in the light emitted from the OLED is relatively large, so that the color of light emitted from the display substrate is dark, and the color purity of light emitted from the display substrate is also high. .
  • FIG. 11 is a schematic structural diagram of another OLED display substrate according to the related art.
  • the OLED display substrate 1 includes a base substrate 10 and a plurality of OLEDs 11 disposed on the base substrate 10, wherein each OLED 11 is capable of emitting light of one color, thereby causing a plurality of OLEDs 11 Together they can emit red, green and blue light.
  • the range of wavelengths of light emitted from each of the OLEDs 11 is large, and light of other colors is usually also interposed in these lights. For example, it is required that a certain OLED 11 emits red light, but light emitted from the OLED 11 is usually mixed with a little yellow light. As a result, the purity of light emitted from each OLED 11 will be relatively low.
  • a color block is disposed correspondingly on a side of each OLED away from the substrate, and the color block can filter the light emitted by the OLED, thereby removing the inclusions in the light. The light components of other colors can thereby increase the purity of light emitted from the display substrate.
  • the process of manufacturing the display substrate is not limited by the FMM. Therefore, the PPI of the display substrate provided in the embodiment of the present disclosure will be large.
  • the PPI of the display substrate may reach 6000.
  • the PPI of the display substrate in the related art is generally less than 6000, for example, about 2000.
  • the display substrate can also achieve a color gamut greater than 100% in the color gamut standard established by the NTSC.
  • a display substrate including a plurality of pixel structures and a color resist layer, wherein each pixel structure is used to emit light of the same color as the corresponding color block. Therefore, among the light emitted from the OLED, the proportion of light that can pass through the color block is large, so that the color purity of the display substrate is high, and the display effect of the display substrate is also improved.
  • FIG. 12 is a flowchart of a method of manufacturing a display substrate in accordance with an embodiment of the present disclosure.
  • the method can be used to fabricate a display substrate as shown in any of Figures 1, 2, 5, 8, 9, and 10.
  • the manufacturing method of the display substrate may include the following steps.
  • Step 1201 Providing a substrate.
  • Step 1202 Form a plurality of pixel structures on the base substrate.
  • Step 1203 forming a color resist layer on a side of the plurality of pixel structures away from the substrate.
  • the color resist layer includes a plurality of color block blocks corresponding to the plurality of pixel structures, wherein each of the plurality of pixel structures emits light of one color, and light emitted from each of the pixel structures The color is the same as the color of its corresponding color block.
  • the display substrate manufactured by the method includes a plurality of pixel structures and a color resist layer, wherein each of the pixel structures is used to emit light of the same color as the corresponding color block. Therefore, among the light emitted from the pixel unit, the amount of light that can pass through the color block is large, so that the color purity of the display substrate is high, and the display effect of the display substrate is improved.
  • the display substrate manufactured by the above method may have various implementation manners, for example, the implementation manners shown in FIG. 2, FIG. 5, FIG. 8, FIG. 9, and FIG. .
  • the method of manufacturing the display substrate is similar.
  • the above manufacturing method can be used to manufacture a display substrate as shown in FIG. 2.
  • step 1202 can include the following sub-steps, as shown in FIG.
  • Step 12021 sequentially forming a first transparent conductive layer and a reflective conductive layer on the base substrate.
  • the first transparent conductive layer 0211 when the first transparent conductive layer 0211 is manufactured, coating, magnetron sputtering, thermal evaporation, or Plasma Enhanced Chemical Vapor Deposition (PECVD) may be used.
  • a method of depositing a transparent conductive material on the base substrate 01 is performed to obtain a transparent conductive material layer (not shown in FIG. 14). After that, the transparent conductive material layer is processed by a patterning process to obtain a first transparent conductive layer 0211.
  • PECVD Plasma Enhanced Chemical Vapor Deposition
  • a single patterning process includes photoresist coating, exposure, development, etching, and photoresist stripping. Therefore, treating the transparent conductive material layer by using a patterning process comprises: coating a layer of photoresist on the transparent conductive material layer; then exposing the photoresist with a mask to form the photoresist into a completely exposed region and a non-exposed area; then processed by a development process to remove the photoresist in the fully exposed area and the photoresist in the non-exposed area is retained; then the corresponding fully exposed areas on the layer of transparent conductive material are etched and After the etching is completed, the photoresist in the non-exposed area is peeled off, thereby obtaining the first transparent conductive layer 0211.
  • a reflective conductive material layer (not shown in Fig. 14) may be formed on the base substrate 01 on which the first transparent conductive layer 0211 is formed. After that, the reflective conductive material layer is processed by a patterning process to obtain a reflective conductive layer 0212 as shown in FIG.
  • Step 12022 forming an insulating layer on the base substrate on which the first transparent conductive layer and the reflective conductive layer are formed.
  • step 12022 it is necessary to form an insulating layer having various thicknesses on the base substrate.
  • FIGS. 15 to 18 The process of forming an insulating layer on the base substrate can be as shown in FIGS. 15 to 18.
  • an insulating material layer and a photoresist layer may be sequentially formed on the substrate substrate 01 on which the first transparent conductive layer 0211 and the reflective conductive layer 0212 are formed (FIG. 15 to FIG. The insulating material layer and the photoresist layer are not shown in FIG. 18).
  • the photoresist layer is exposed using a mask to form a fully exposed region and a non-exposed region, wherein the non-exposed regions are corresponding regions of the reflective conductive layer 0212 in the photoresist layer.
  • the process is then followed by a development process to remove the photoresist in the fully exposed areas and the photoresist in the non-exposed areas remains.
  • the corresponding area on the insulating material layer of the fully exposed region is etched, and the photoresist in the non-exposed region is peeled off after the etching is completed.
  • the first insulating layer pattern C1 and the first photoresist pattern C2 as shown in FIG. 15 can be obtained.
  • the first photoresist pattern C2 may be exposed and developed using a halftone mask to remove the insulating layer to be formed with a minimum thickness.
  • the photoresist in the region, and the photoresist in the region where the sub-thickness insulating layer is to be formed is thinned, thereby obtaining the second photoresist pattern C3 as shown in FIG.
  • the second photoresist pattern C3 includes a first thickness region C31, a second thickness region C32, and a photoresist complete removal region C33, wherein the photoresist thickness in the first thickness region C31 is greater than that in the second thickness region C32.
  • the photoresist thickness, and the first thickness region C31 is a corresponding region of the insulating layer to be formed to the maximum thickness in the second photoresist pattern C3.
  • the first insulating layer pattern C1 may be etched using the second photoresist pattern C3 as a mask, such as by dry etching. During the etching, the first insulating layer pattern C1 corresponding to the photoresist completely removed region C33 is thinned, and the second thickness region C32 and its corresponding first insulating layer pattern C1 are thinned. After that, the first thickness region C31 is peeled off again, thereby obtaining the second insulating layer pattern C4 as shown in FIG.
  • a via hole C5 can be formed in the second insulating layer pattern C4, so that three thicknesses of the insulating layer 0213 can be obtained.
  • the three thicknesses of the insulating layer 0213 are respectively in one-to-one correspondence with the first thickness region C31, the second thickness region C32, and the photoresist complete removal region C33 in the second photoresist pattern C3.
  • step 12022 can also be implemented in other manners.
  • three different thicknesses of the insulating layer may be formed in sequence, and the embodiment of the present disclosure does not limit this.
  • Step 12023 sequentially forming a second transparent insulating layer, a first hole injecting layer, a first hole transporting layer, a red light emitting layer, a green light emitting layer, and a first electron transporting layer on the base substrate on which the insulating layer is formed.
  • each of the film layers that need to be formed may include: coating a material for the film layer, and then processing the material by a patterning process.
  • the process may refer to the process for fabricating the first transparent conductive layer or the reflective conductive layer in step 12021.
  • a structure as shown in FIG. 19 can be obtained.
  • the structure shown in FIG. 19 includes a red light pixel structure capable of emitting red light, a green light pixel structure emitting green light, and a blue light pixel structure emitting blue light.
  • a color resist layer can be formed on the TFE layer.
  • the display substrate manufactured by the method provided above includes a plurality of pixel structures and a color resist layer, wherein each pixel structure is used to emit the same color as the corresponding color block Light. Therefore, among the light emitted from the pixel structure, more light can pass through the color block, so that the color purity of the display substrate is higher, and the display effect of the display substrate is better.
  • Embodiments of the present disclosure also provide a display device.
  • the display device may include the display substrate shown in any of FIGS. 1, 2, 5, 8, 9, and 10.
  • the display device may be any product or component having a display function such as an electronic paper, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, or the like.

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