WO2019210712A1 - 柔性显示器件及其制作方法 - Google Patents

柔性显示器件及其制作方法 Download PDF

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Publication number
WO2019210712A1
WO2019210712A1 PCT/CN2019/072797 CN2019072797W WO2019210712A1 WO 2019210712 A1 WO2019210712 A1 WO 2019210712A1 CN 2019072797 W CN2019072797 W CN 2019072797W WO 2019210712 A1 WO2019210712 A1 WO 2019210712A1
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layer
region
flexible display
flexible substrate
display device
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PCT/CN2019/072797
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English (en)
French (fr)
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张帅
左岳平
刘利宾
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京东方科技集团股份有限公司
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Priority to US16/611,110 priority Critical patent/US11177448B2/en
Publication of WO2019210712A1 publication Critical patent/WO2019210712A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present disclosure relates to the field of display technologies, and in particular, to a flexible display device and a method of fabricating the same.
  • the display device is either a Thin Film Transistor Liquid Crystal Display (TFT-LCD) or an Organic Light Emitting Diode (Organic Light Emitting Diode, OLED), etc., are all fabricated on the mother board and then cut and separated, further completing the back-end module process.
  • TFT-LCD Thin Film Transistor Liquid Crystal Display
  • OLED Organic Light Emitting Diode
  • a manufacturing method of a flexible display substrate including a flexible substrate in the related art first, a flexible substrate is formed on a carrier, and then a plurality of display devices are simultaneously fabricated on a flexible substrate in a highly efficient arrangement manner.
  • a laser cutting technique is generally used in the related art to cut the cleavable region between two adjacent display devices in the flexible display substrate.
  • a first aspect of the present disclosure provides a method of fabricating a flexible display device, the method comprising:
  • the flexible display device that has completed the etching process is peeled off from the carrier to obtain a plurality of mutually independent flexible display devices.
  • steps of fabricating a plurality of flexible display devices on the carrier board include:
  • a plurality of film layers are formed on the flexible substrate, wherein the flexible substrate and the plurality of film layers cover the cutting region.
  • the step of forming a plurality of film layers on the flexible substrate comprises:
  • the etch barrier layer comprising a first barrier pattern and a second barrier pattern, the first barrier pattern and the second barrier pattern being respectively disposed on both sides of the cutting region to define etching width.
  • the flexible display device fabricated on the carrier includes a bend region, the flexible substrate and the plurality of film layers covering the bend region.
  • the step of forming a plurality of film layers on the flexible substrate comprises:
  • a thin film transistor array layer is formed on the flexible substrate, wherein the thin film transistor array layer includes a gate layer, and a source layer and a drain layer.
  • the step of forming a plurality of film layers on the flexible substrate comprises:
  • the etch stop layer and the source and drain layers included in the thin film transistor array layer are formed by one patterning process.
  • the etch barrier layer includes a first metal layer and a second metal layer
  • the step of forming a plurality of film layers on the flexible substrate includes:
  • a second metal layer in the etch barrier layer and a source layer and a drain layer included in the thin film transistor array layer are formed by a second patterning process.
  • the manufacturing method of the present disclosure further includes:
  • a buffer layer is formed on the flexible substrate.
  • the step of forming a plurality of film layers on the flexible substrate comprises:
  • An organic material layer is formed on the thin film transistor array layer.
  • the step of forming a plurality of film layers on the flexible substrate comprises:
  • An encapsulation layer is formed on the organic material layer.
  • the step of etching the flexible display device fabricated on the carrier to expose the carrier in the cutting area comprises:
  • the plurality of film layers and the flexible substrate are sequentially removed by etching to expose a carrier plate located in the cutting region.
  • the step of etching the flexible display device fabricated on the carrier to expose the carrier in the cutting region includes:
  • the thin film transistor array layer located in the dicing region and the thin film transistor array layer at the bent region are simultaneously removed by one etching process.
  • the manufacturing method includes:
  • the buffer layer located in the cutting region and the buffer layer located in the bending region are simultaneously removed by one etching process.
  • the step of etching the flexible display device fabricated on the carrier to expose the carrier in the cutting region includes:
  • the organic material layer located in the cutting region and the organic material layer located in the bending region are simultaneously removed by exposure.
  • the manufacturing method includes:
  • the encapsulation layer and the flexible substrate layer at the dicing region and the encapsulation layer at the dicing region are removed by an etching process to expose a carrier plate located in the dicing region.
  • the flexible substrate includes a first flexible substrate, an isolation layer, and a second flexible substrate, which are disposed in a stacked manner, wherein the encapsulation layer and the flexible substrate layer located in the dicing region are removed by a single etching process, and are located
  • the step of encapsulating the bent region includes:
  • the encapsulation layer at the dicing region, the encapsulation layer at the embossed region, and the second flexible substrate, the isolation layer, and the first flexible substrate at the dicing region are removed by an etching process.
  • the step of peeling off the flexible display device that completes the etching process from the carrier board comprises:
  • the flexible display device that completed the etching treatment was peeled off from the carrier by laser lift-off.
  • a second aspect of the present disclosure also provides a flexible display device fabricated by the method of fabricating the flexible display device provided by the above embodiments.
  • FIG. 1 is a flowchart of a method for fabricating a flexible display device according to an embodiment of the present disclosure.
  • a method for fabricating a flexible display device is provided in an embodiment of the present disclosure, which can be applied to a fabrication process of a current mainstream flexible display device.
  • a flexible display device is fabricated by forming a flexible PI film on a hard substrate (generally using a glass carrier) to form a functional film layer on the PI film, which typically includes a thin film transistor layer and an OLED layer. , encapsulation layer, etc.
  • the PI layer is separated from the glass carrier by a laser lift-off (LLO), thereby obtaining a display panel device having a PI film as a flexible substrate.
  • LLO laser lift-off
  • the laser is irradiated from the side of the glass carrier to the flexible panel, and the molecular force between the flexible PI substrate and the glass carrier is broken by the laser to achieve effective separation between the PI substrate and the glass carrier.
  • a plurality of display devices which are integrally prepared are first peeled off from a glass carrier, and then sliced by laser cutting to obtain a plurality of independent flexible display devices.
  • the use of a laser cutting process requires a certain amount of cutting margin to be reserved, resulting in an inability to achieve ultra-narrow bezel products while maintaining device quality.
  • embodiments of the present disclosure provide a method of fabricating a flexible display device in which respective flexible display devices formed on a glass carrier are separated from each other by an etching method, and each flexible display device is individually attached to the glass. On the carrier board.
  • the method of the embodiments of the present disclosure it is not necessary to use a laser cutting process for performing display device segmentation, which avoids the limitation of margin in the laser cutting process.
  • an etching method it is possible to precisely define the etching width at the time of etching in the dicing region, contributing to providing a high quality display device product and improving production yield.
  • the etching process can be optimally combined with the preparation process of the functional film layer of the flexible display device, so that the separation between the display devices can be completed without additional process steps, and the production cost is effectively reduced.
  • the etching process may employ dry etching and/or wet etching.
  • the term "flexible display device” as used herein unless passed before The definition specifies the process state (or stage) in which it is located, and is intended to cover an existing functional film layer that is in the display device region that has completed all of the fabrication process or is still in the process of being prepared.
  • a glass carrier 3 as a hard substrate, a flexible substrate 4 formed on the glass carrier 3, a buffer layer 5 formed on the flexible substrate 4, and a film formed on the buffer layer 5 are shown in Fig. 1d.
  • a dicing area 1 is previously provided between each adjacent flexible display device for performing dicing by an etching process.
  • the buffer layer 5, the thin film transistor array layer 6, the organic material layer 7, and the encapsulation layer 8 are sequentially formed, that is, the preparation of the flexible display device is completed. Thereafter, the film layers in the dicing region 1 between the adjacent flexible display devices are removed by an etching process, so that the respective flexible display devices formed on the glass carrier 3 are separated from each other and attached to the glass carrier 3, respectively. on.
  • a plurality of flexible display devices are stripped from the glass carrier 3 by any suitable separation means including, but not limited to, laser lift-off techniques to form a plurality of mutually independent flexible display devices, and then the flexibility of the separated flexible display devices
  • a base film is attached to the substrate 4 to complete the fabrication of the flexible display device.
  • Any suitable technique/process capable of effectively stripping the flexible substrate layer from the glass carrier can be employed, and these stripping processes can be combined with the etching process in the embodiments of the present disclosure to provide the same or similar to the above embodiments.
  • the beneficial effect is that the product design of the ultra-narrow bezel is realized while ensuring the quality of the device.
  • the manufacturing method of the above flexible display device comprises: fabricating a plurality of flexible display devices on the glass carrier 3; etching the flexible display device fabricated on the glass carrier 3 to expose the cutting a glass carrier 3 of the region 1, the cutting region 1 being a predetermined region between adjacent flexible display devices; and a flexible display device that has completed the etching process is peeled off from the glass carrier 3 to obtain A flexible display device that is independent of each other.
  • the metal layer, the inorganic material and the organic material included in the plurality of film layers are etched by different etching processes, and finally the exposed region 1 is exposed.
  • the manufacturing method of the flexible display device of the above embodiment of the present disclosure first, a plurality of flexible display devices are fabricated on the glass carrier 3, and then the etching process is used to remove the film layer of the cutting region 1 between the adjacent flexible display devices.
  • the display devices are separated from each other, and finally the flexible display device in which the etching process is completed is peeled off from the carrier 3 by laser stripping to form a plurality of mutually independent flexible display devices.
  • the flexible display device is fabricated by the manufacturing method provided by the embodiment of the present disclosure, the display devices are separated from each other by using an etching process, and the laser cutting technology used in the related art not only has a smaller cutting width, but also can realize Precise control of the bezel of the flexible display device. Therefore, the flexible display device is fabricated by the manufacturing method provided by the embodiment of the present disclosure, and the product design of the ultra-narrow bezel can be realized while improving the quality of the device.
  • the process of removing the film layer located in the cutting region 1 by an etching process may be performed at any appropriate process node according to actual needs, for example, a film layer covering the cutting region 1 may be formed. Thereafter, the film layer located in the cutting region 1 is removed by an etching process; and at least two layers covering the cutting region 1 may be formed, and then the etching process may be used to place the at least two layers in the cutting region 1. The film layer is removed.
  • the above etching process for separating the respective flexible display devices from each other may be performed as needed or in synchronization with the preparation process of the respective film layers, and only the carrier 3 located in the cutting region 1 is finally exposed, so that laser cutting is not performed. In the case of the case, the adjacent flexible display devices are completely separated.
  • the etching process can also be implemented synchronously during the fabrication of the flexible display device, thereby effectively reducing process complexity and cost.
  • the steps of fabricating a plurality of flexible display devices on a carrier board include:
  • the flexible substrate 4 herein may include a first flexible substrate 41, an isolation layer 42, and a second flexible substrate 43 which are laminated.
  • a flexible display device fabricated on a carrier board includes a bend region 2 that covers the bend region 2 .
  • the bent region is a panel region that is frequently in a bent state; in some embodiments, the TFT array layer and the organic material light-emitting layer in the bent region are also removed, Only the flexible substrate layer remains.
  • the etching process can be used to remove the film layer of the bending region 2 while simultaneously The film layer located in the cutting region 1 is removed to avoid adding an additional etching process for removing the film layer of the cutting region 1, saving manufacturing costs.
  • the step of forming a plurality of film layers on the flexible substrate 4 includes:
  • a thin film transistor array layer 6 is formed on the flexible substrate 4, wherein the thin film transistor array layer 6 includes a gate layer, and a source layer and a drain layer.
  • the thin film transistor array layer 6 includes a plurality of thin film transistors, and the thin film transistor array layer 6 includes at least a film layer: a gate layer, an inorganic layer, a semiconductor material layer, a source/drain metal layer, and the like.
  • the inorganic layer generally covers the entire region of the flexible substrate 4 (including the dicing region 1 and the dicing region 2), and the gate layer, the source/drain metal layer, and the like may be formed in the display device region, avoiding The cutting region 1 and the bending region 2 are opened, and an etch barrier pattern for an etching process may be formed on the outer side of the dicing region 1 while forming a source/drain metal layer, as will be described later.
  • the flexible substrate 4 located in the cutting region 1 and in the bending region 2 can be exposed by simultaneously removing the inorganic layer located in the cutting region 1 and the inorganic layer located in the bending region 2 by an etching process.
  • the method before the step of forming the thin film transistor array layer 6 on the flexible substrate 4, the method further includes: forming a buffer layer 5 on the flexible substrate 4.
  • the buffer layer 5 is formed on the flexible substrate 4, in order to remove the buffer layer 5 located in the dicing region 1, for example, the following manner can be employed.
  • the thin film transistor array layer 6 and the buffer layer 5 located in the dicing region 1 and the thin film transistor array layer 6 and the buffer layer 5 located in the dicing region 2 are simultaneously removed by an etching process, as shown in FIG. 1b. .
  • the buffer located in the dicing region 1 is simultaneously removed by another etching process.
  • the buffer layer 5 located in the dicing region 1 is removed in the first manner, there is no need to add an additional etching process for removing the buffer layer 5, which simplifies the separation process between adjacent flexible display devices;
  • the buffer layer 5 is removed, the etching precision of etching the thin film transistor array layer 6 and the buffer layer 5 located in the dicing region 1 and the bending region 2 can be better ensured.
  • the step of forming a plurality of film layers on the flexible substrate 4 includes forming an organic material layer 7 on the thin film transistor array layer 6.
  • the organic material layer 7 generally includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and the like, wherein the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer may be referred to as
  • the common layer covers the cut region 1 and the bent region 2, and the light emitting layer may be formed in the display device region, avoiding the cut region 1 and the bent region 2.
  • an etching process can be used to simultaneously remove the common layer located in the cutting area 1 and the common layer located in the bending area 2, which can be located in the cutting area 1 and in the bending area.
  • the flexible substrate 4 of 2 is exposed.
  • the organic material layer 7 When the organic material layer 7 is removed, it can be removed by directly exposing it through a mask and then cleaning it with a developer.
  • the step of forming a plurality of film layers on the flexible substrate 4 includes forming an encapsulation layer 8 on the organic material layer 7.
  • the flexible display device needs to be packaged, and the formed package layer 8 covers the cutting.
  • the region 1 and the bent region 2 so in order to expose the flexible substrate 4 located in the cutting region 1 and in the bending region 2, an etching process can be used to simultaneously remove the encapsulation layer 8 located in the cutting region 1 and the bending region 2 Encapsulation layer 8.
  • the etching process for the dicing region 1 may be performed simultaneously with the first etching and the second etching for the bending region 2.
  • the first etching for the dicing region 1 is performed in synchronization with the first etching process of the bending region, by this moment The etching process removes the thin film transistor array layer 6 on the dicing region 1 to expose the buffer layer 5.
  • the second etching for the dicing region 1 is performed in synchronization with the second etching process of the bending region 2, and the buffer layer 5 on the dicing region 1 is removed by the etching process to expose the buffer layer 5
  • the flexible substrate 4 below.
  • the step of forming the organic material layer 7 on the thin film transistor array layer 6 may be performed between the first etching and the second etching, that is, removing the thin film transistor array layer 6 on the dicing region 1, exposing the buffer layer
  • the organic material layer 7 is formed after 5.
  • the organic material layer 7 may be formed after the second etching, that is, at the position of the dicing region 1, the organic material layer 7 is formed after the buffer layer 5 is removed.
  • the step of forming the organic material layer 7 is not limited and can be appropriately arranged depending on the specific fabrication process.
  • the step of forming the encapsulation layer 8 may be disposed after the second etching process described above.
  • the etching process for the bending zone 2 has ended.
  • the individual flexible display panels have thus been separated from one another and are each attached to the glass carrier 3 in order to finally achieve a final peeling of the narrow bezel panels by means of the LLO.
  • forming the etch barrier layer includes forming a first barrier pattern 91 and a second barrier pattern 92, the first barrier pattern and the second barrier pattern being respectively disposed at two of the cutting regions Side to define the etch width.
  • an etch barrier layer including the first barrier pattern 91 and the second barrier pattern 92 may be simultaneously formed, and the two barrier patterns respectively correspond to the cutting region 1
  • the etching width when etching in the cutting region 1 by the etching process can be precisely defined, and the other regions in the vicinity of the cutting region 1 in the flexible display device are etched away when etching the cutting region 1
  • the film layer better ensures the precision of etching the film layer of the cutting region 1.
  • the manufacturing method of the flexible display includes:
  • the etch barrier layer is a single-layer metal film layer, which may be formed by a patterning process with the gate layer included in the thin film transistor array layer 6, or may be formed in the thin film transistor array layer 6.
  • the included source and drain layers are formed by one patterning process. This makes it easy to add an additional patterning process to make the etch barrier and reduce the cost.
  • the first barrier pattern 91 and the second barrier pattern 92 included in the etch barrier layer each include at least two metal layers stacked in a stack.
  • the etch barrier layer includes a first metal layer and a second metal layer
  • the step of forming a plurality of film layers on the flexible substrate includes:
  • the at least two metal layers may be formed in the same process as the various metal layers included in the thin film transistor array layer 6.
  • one of the at least two metal layers is formed in the same patterning process as the gate layer included in the thin film transistor array layer 6, and the other of the at least two metal layers and the thin film transistor array layer
  • the source and drain layers included in 6 are formed in the same patterning process.
  • each of the at least two metal layers may also be formed in the same patterning process as the film layers included in the thin film transistor array layer 6, such as gate lines, data lines, and anode layers, respectively. Said.
  • the width of the etch barrier layer in the direction perpendicular to the extending direction of the dicing region 1 may be minimized, for example, the etch barrier layer is disposed perpendicular to the dicing region 1
  • the width of the extension direction is less than 10um, or less than 5um.
  • the manufacturing method provided by the above embodiment further includes: forming a protective layer on the etch barrier layer.
  • a protective layer may be formed on the etch barrier layer, and the protective layer may be a colloidal material, and the etch stop layer is covered by the protective layer, thereby preventing the etching process from blocking the etch.
  • the layer has an effect to better ensure the accuracy of the etching.
  • the embodiment of the present disclosure further provides a flexible display device fabricated by the method for fabricating the flexible display device provided by the above embodiments.
  • the display devices are separated from each other, and then Then, the flexible display device which has been subjected to the etching treatment is peeled off from the carrier by laser stripping technology to form a plurality of mutually independent flexible display devices. It can be seen that when the flexible display device is fabricated by using the technical solution provided by the embodiment of the present disclosure, each display device is separated from each other by an etching process, and it is not necessary to reserve a distance as a cutting margin on the periphery of the flexible display device, compared with the current tradition.
  • the laser cutting technology has a smaller cutting width, which is conducive to the design of ultra-narrow bezel products. Therefore, when the flexible display device is fabricated by using the technical solution provided by the embodiment of the present disclosure, the product design of the ultra-narrow bezel can be realized while ensuring the quality of the device.

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Abstract

本公开提供一种柔性显示器件及其制作方法，该柔性显示器件的制作方法包括：在载板上制作多个柔性显示器件；对所述在载板上制作的柔性显示器件进行刻蚀以暴露出位于切割区域的载板，所述切割区域是位于相邻的柔性显示器件之间的预定区域；以及将完成刻蚀处理的柔性显示器件从所述载板上剥离以获得多个相互独立的柔性显示器件。

Description

柔性显示器件及其制作方法
相关申请的交叉引用
本申请主张在2018年5月2日在中国提交的中国专利申请号No.201810409491.3的优先权，其全部内容通过引用包含于此。
技术领域
本公开涉及显示技术领域，尤其涉及一种柔性显示器件及其制作方法。
背景技术
目前，为了提高显示装置的生产效率、降低生产成本，显示装置无论是薄膜晶体管液晶显示装置(Thin Film Transistor Liquid Crystal Display，TFT-LCD)，或者有机电致发光二极管显示装置(Organic Light Emitting Diode，OLED)等，均是在母板上进行整体工艺制作后再切割分离，进一步完成后段模组工艺。
以相关技术中制作包括柔性衬底的柔性显示基板的制作方法为例，首先在载板上形成柔性衬底，然后在柔性衬底上以高利用率的排布方式同时制作多个显示器件，形成柔性显示基板母板，然后采用激光剥离技术或者其他任何适用的分离手段将柔性衬底与载板分离，在柔性衬底背向显示器件的表面贴附底膜，最后执行分片工艺以获得各个独立的柔性显示基板，相关技术中一般采用激光切割技术对柔性显示基板母板中相邻两个显示器件之间的可切割区域进行切割。但是，由于激光切割的温度较高，为了避免高温对显示器件造成影响，一般会与显示器件的边缘相距一定的宽度处进行激光切割，即针对激光切割工艺需要预留一定的切割裕量，但这种预留切割裕量的方式不利于超窄边框的产品设计，因此相关技术中制作显示器件的切割方法无法在保证器件质量的同时，实现超窄边框的产品设计。
发明内容
本公开的第一方面提供一种柔性显示器件的制作方法，该制作方法包括：
在载板上制作多个柔性显示器件；
对在载板上制作的柔性显示器件进行刻蚀以暴露出位于切割区域的载板，所述切割区域是位于相邻的柔性显示器件之间的预定区域；以及
将完成刻蚀处理的柔性显示器件从所述载板上剥离以获得多个相互独立的柔性显示器件。
进一步地，在载板上制作多个柔性显示器件的步骤包括：
在所述载板上形成柔性衬底；以及
在所述柔性衬底上形成多个膜层，其中所述柔性衬底和所述多个膜层覆盖所述切割区域。
可选地，在所述柔性衬底上形成多个膜层的步骤包括：
形成刻蚀阻挡层，所述刻蚀阻挡层包括第一阻挡图形和第二阻挡图形，所述第一阻挡图形和所述第二阻挡图形分别设置在所述切割区域的两侧以限定刻蚀宽度。
可选地，在载板上制作的柔性显示器件包括弯折区域，所述柔性衬底和所述多个膜层覆盖所述弯折区域。
可选地，在所述柔性衬底上形成多个膜层的步骤包括：
在所述柔性衬底上形成薄膜晶体管阵列层，其中所述薄膜晶体管阵列层包括栅极层、以及源极层和漏记层。
在一些实施例中，在所述柔性衬底上形成多个膜层的步骤包括：
通过一次构图工艺形成所述刻蚀阻挡层和所述薄膜晶体管阵列层中包括的栅极层；或，
通过一次构图工艺形成所述刻蚀阻挡层和所述薄膜晶体管阵列层中包括的源极层和漏极层。
在一些实施例中，刻蚀阻挡层包括第一金属层和第二金属层，所述在柔性衬底上形成多个膜层的步骤包括：
通过第一次构图工艺形成所述刻蚀阻挡层中的第一金属层和所述薄膜晶体管阵列层中包括的栅极层；以及
通过第二次构图工艺形成所述刻蚀阻挡层中的第二金属层和所述薄膜晶体管阵列层中包括的源极层和漏极层。
可选地，本公开的制作方法在所述柔性衬底上形成薄膜晶体管阵列层的步骤之前，还包括：
在所述柔性衬底上形成缓冲层。
可选地，在柔性衬底上形成多个膜层的步骤包括：
在所述薄膜晶体管阵列层上形成有机材料层。
可选地，在柔性衬底上形成多个膜层的步骤包括：
在所述有机材料层上形成封装层。
可选地，对在载板上制作的柔性显示器件进行刻蚀以暴露出位于切割区域的载板的步骤包括：
通过刻蚀依次去除所述多个膜层和所述柔性衬底，以暴露出位于切割区域的载板。
在一些实施例中，对在载板上制作的柔性显示器件进行刻蚀以暴露出位于切割区域的载板的步骤包括：
通过一次刻蚀工艺同时去除位于所述切割区域的薄膜晶体管阵列层和位于所述弯折区域的薄膜晶体管阵列层。
在一些实施例中，在通过一次刻蚀工艺同时去除位于所述切割区域的薄膜晶体管阵列层和位于所述弯折区域的薄膜晶体管阵列层之后，该制作方法包括：
通过一次刻蚀工艺同时去除位于所述切割区域的缓冲层和位于所述弯折区域的缓冲层。
在一些实施例中，对在载板上制作的柔性显示器件进行刻蚀以暴露出位于切割区域的载板的步骤包括：
通过曝光同时去除位于所述切割区域的有机材料层和位于所述弯折区域的有机材料层。
可选地，在通过一次刻蚀工艺同时去除位于所述切割区域的缓冲层和位于所述弯折区域的缓冲层之后，该制作方法包括：
通过一次刻蚀工艺去除位于所述切割区域的封装层和柔性衬底层、以及位于所述弯折区域的封装层，暴露出位于所述切割区域的载板。
在一些实施例中，柔性衬底包括层叠设置的第一柔性衬底、隔离层和第 二柔性衬底，其中通过一次刻蚀工艺去除位于所述切割区域的封装层和柔性衬底层、以及位于所述弯折区域的封装层的步骤包括：
通过一次刻蚀工艺去除位于所述切割区域的封装层、位于所述弯折区域的封装层，以及位于所述切割区域的第二柔性衬底、隔离层和第一柔性衬底。
可选的，将完成刻蚀处理的柔性显示器件从所述载板上剥离的步骤包括：
采用激光剥离将完成刻蚀处理的柔性显示器件从所述载板上剥离。
本公开的第二方面还提供了一种柔性显示器件，其采用上述实施例提供的柔性显示器件的制作方法制作。
附图说明
此处所说明的附图用来提供对本公开的进一步理解，构成本公开的一部分，本公开的示意性实施例及其说明用于解释本公开，并不构成对本公开的不当限定。在附图中：
图1a～图1e为本公开实施例提供的柔性显示器件制作方法的流程图。
具体实施方式
为了进一步说明本公开实施例提供的柔性显示器件及其制作方法，下面结合说明书附图进行详细描述。
参照附图1a～图1e，下面对根据本公开实施例的柔性显示器件的制作方法进行说明。
本公开实施例中提供了一种用于柔性显示器件的制作方法，其能够适用于当前主流的柔性显示器件的制作工艺。通常地，柔性显示器件的制作工艺是通过在硬质衬底(一般使用玻璃载板)上形成柔性PI薄膜，在PI薄膜上形成功能膜层，这功能膜层通常包括薄膜晶体管层、OLED层、封装层等。
在PI薄膜上连续制备包括上述功能膜层的显示面板器件之后，通过激光剥离工艺(Laser lift-off，LLO)使得PI层脱离玻璃载板，从而得到以PI薄膜为柔性基底的显示面板器件。具体地，在激光剥离工艺LLO中，使用激光从玻璃载板一侧向柔性面板照射，通过激光破坏柔性PI基板与玻璃载板之间的分子作用力而实现PI基板与玻璃载板的有效分离。
在相关技术的柔性显示器件的制程中，一般是首先将整体制备的多个显示器件从玻璃载板上剥离，然后通过激光切割来进行分片，以获得多个独立的柔性显示器件。如本公开的背景技术部分已经指出的，采用激光切割工艺需要预留一定的切割裕量，导致无法在保证器件质量的同时实现超窄边框产品。
有鉴于此，本公开实施例提供了一种柔性显示器件的制作方法，其中采用刻蚀方法使得形成在玻璃载板上的各个柔性显示器件彼此分离，每个柔性显示器件单独地贴附在玻璃载板上。
根据本公开实施例的方法，无需使用激光切割工艺来进行显示器件分片，避免了激光切割工艺中预留裕量的限制。同时，通过使用刻蚀方法，能够精确限定在切割区域进行刻蚀时的刻蚀宽度，有助于提供高质量的显示器件产品并且提升生产良率。此外，还可以将刻蚀工艺与柔性显示器件的功能膜层的制备工艺优化组合，使得无需额外的工艺步骤即可完成各个显示器件之间的分离，有效地降低了生产成本。
上述柔性显示器件的制作方法中，刻蚀工艺可以采用干法刻蚀和/或湿发刻蚀等。
由于本公开中用于柔性显示器件的制作方法并不仅限于在显示器件的全部膜层制备完成后才进行刻蚀、剥离处理，因而本文中所使用的术语“柔性显示器件”，除非通过在前限定具体指明了其所处的工艺状态(或阶段)，意在涵盖位于显示器件区域的完成了全部制备工艺或者仍处于制备过程中的已有(existing)功能膜层。
下面参照附图对本公开实施例中的柔性显示器件的各个膜层构造进行说明。图1d中示出了作为硬质衬底的玻璃载板3，形成在玻璃载板3上的柔性衬底4，形成在柔性衬底4上的缓冲层5，在缓冲层5上形成的薄膜晶体管阵列层6，在薄膜晶体管阵列层6上形成的有机材料层7，以及形成在各个膜层最外侧的封装层8。各个相邻的柔性显示器件之间预先设置了切割区域1，用于通过刻蚀工艺来执行分片。
在本公开的一些实施例中，可以在依次形成柔性衬底4、缓冲层5、薄膜晶体管阵列层6、有机材料层7以及封装层8等全部膜层之后，即在完成柔 性显示器件的制备之后，通过刻蚀工艺将位于相邻柔性显示器件之间的切割区域1中的膜层去除，使得形成在玻璃载板3上的各柔性显示器件彼此分开，并分别贴附在玻璃载板3上。
接下来通过包括但不限于激光剥离技术的任何适用的分离手段将多个柔性显示器件从玻璃载板3上剥离，形成多个相互独立的柔性显示器件，然后在分离后的柔性显示器件的柔性衬底4上贴附底膜，完成柔性显示器件的制作。可以采用任何适用的能够有效地将柔性衬底层从玻璃载板上剥离的技术/工艺，这些剥离工艺均能够与本公开实施例中的刻蚀工艺结合起来，提供与上述实施例相同或相近的有益效果，即在保证器件质量的同时，实现超窄边框的产品设计。
如图1d所示，上述柔性显示器件的制作方法包括：在玻璃载板3上制作多个柔性显示器件；对所述在玻璃载板3上制作的柔性显示器件进行刻蚀以暴露出位于切割区域1的玻璃载板3，所述切割区域1是位于相邻的柔性显示器件之间的预定区域；以及将完成了刻蚀处理的柔性显示器件从所述玻璃载板3上剥离以获得多个相互独立的柔性显示器件。
在对制作完成的柔性显示器件进行刻蚀处理时，需要通过不同的刻蚀工艺对上述多个膜层中包括的金属层、无机材料和有机材料进行刻蚀，最终暴露出位于切割区域1的玻璃载板3。
根据本公开上述实施例的柔性显示器件的制作方法，首先在玻璃载板3上制作多个柔性显示器件，然后采用刻蚀工艺去除位于相邻柔性显示器件之间的切割区域1的膜层，实现将各显示器件彼此分离，最后再采用激光剥离技术将完成了刻蚀处理的柔性显示器件从载板3上剥离，形成多个相互独立的柔性显示器件。可见，采用本公开实施例提供的制作方法制作柔性显示器件时，通过采用刻蚀工艺将各显示器件彼此分离，相对于相关技术中采用的激光切割技术不仅具有更小的切割宽度，还能够实现对柔性显示器件的边框的精准把控。因此，采用本公开实施例提供的制作方法制作柔性显示器件，能够在提升器件质量的同时，实现超窄边框的产品设计。
根据本公开的另一些实施例，采用刻蚀工艺去除位于切割区域1的膜层的工序，可以根据实际需要安排在任何适当的工艺节点执行，例如：可以在 形成一个覆盖切割区域1的膜层后，就采用刻蚀工艺将位于切割区域1中的该膜层去除；也可以在形成至少两层覆盖切割区域1的膜层后，再采用刻蚀工艺将位于切割区域1的该至少两层膜层去除。
上述用于将各个柔性显示器件彼此分离的刻蚀工艺可以根据需要与各个膜层的制备工艺交叉进行或者同步进行，只需最终暴露出位于切割区域1的载板3，从而在不进行激光切割的情况下将相邻的柔性显示器件彻底分离。
在本公开的一些实施例中，该刻蚀工艺还可以在柔性显示器件的制作过程中同步实现，从而有效地降低了工艺复杂度和成本。
如图1a-1d所示，在载板上制作多个柔性显示器件的步骤包括：
在载板上形成柔性衬底4；以及在该柔性衬底4上形成多个膜层，其中所述柔性衬底4和所述多个膜层覆盖相邻柔性显示器件之间的切割区域1。
这里的柔性衬底4可以包括层叠设置的第一柔性衬底41、隔离层42和第二柔性衬底43。
在本公开的一些实施例中，在载板上制作的柔性显示器件包括弯折区域2，所述柔性衬底和所述多个膜层覆盖所述弯折区域2。在根据本公开实施例的柔性显示器件中，弯折区域是会频繁处于弯折状态的面板区域；在一些实施例中，该弯折区域中的TFT阵列层以及有机材料发光层也会去除，仅留下柔性衬底层。换句话说，在设计了弯折区域的柔性显示器件的制作过程中，固有地存在对于柔性衬底4上的TFT阵列层、有机材料发光层等膜层进行刻蚀的工艺要求。由于在所要制作的柔性显示器件包括弯折区域2时，形成在弯折区域2上的各膜层也需要去除，这样就可以在采用刻蚀工艺去除弯折区域2的膜层的同时，同时将位于切割区域1的膜层去除，以避免为了去除切割区域1的膜层而增加额外的刻蚀工艺，节约了制作成本。
当然，本领域技术人员能够理解，即使所制作的柔性显示器件上没有设置特定的弯折区，本公开中提供的通过刻蚀工艺来分离各个柔性显示器件的技术手段仍然适用于这些制作方法，同时仍然能够提供适用于超窄边框产品的切割宽度控制，只是上述刻蚀工艺需要在单独的步骤中执行，或者与柔性显示器件制备过程中针对非弯折区的其他部分进行刻蚀的处理同时执行。
根据本公开的一些实施例，在柔性衬底4上形成多个膜层的步骤包括：
在该柔性衬底4上形成薄膜晶体管阵列层6，其中所述薄膜晶体管阵列层6包括栅极层、以及源极层和漏记层。
薄膜晶体管阵列层6包括多个薄膜晶体管，且薄膜晶体管阵列层6至少包括如下膜层：栅极层、无机层、半导体材料层、源漏金属层等。在制作薄膜晶体管阵列层6时，无机层一般覆盖柔性衬底4的全部区域(包括切割区域1和弯折区域2)，而栅极层、源漏金属层等可以形成在显示器件区域、避开切割区域1和弯折区域2，并且在形成源漏金属层的同时还可以在切割区域1的外侧形成用于刻蚀工艺的刻蚀阻挡图形，详见后文的说明。
通过刻蚀工艺同时去除位于切割区域1的无机层和位于弯折区域2的无机层，可以将位于切割区域1和位于弯折区域2的柔性衬底4暴露出来。
根据本公开的一些实施例，在所述柔性衬底4上形成薄膜晶体管阵列层6的步骤之前，还包括：在该柔性衬底4上形成缓冲层5。
当在柔性衬底4上形成有缓冲层5时，为了去除位于切割区域1的缓冲层5可以采用例如下述方式。
第一种方式，通过一次刻蚀工艺，同时去除位于切割区域1的薄膜晶体管阵列层6和缓冲层5，以及位于弯折区域2的薄膜晶体管阵列层6和缓冲层5，如图1b所示。第二种方式，在通过一次刻蚀工艺去除位于切割区域1的薄膜晶体管阵列层6和位于弯折区域2的薄膜晶体管阵列层6之后，通过另一次刻蚀工艺同时去除位于切割区域1的缓冲层5和位于弯折区域2的缓冲层5。
当采用第一种方式去除位于切割区域1的缓冲层5时，不需要为了去除缓冲层5而增加额外的刻蚀工艺，简化了相邻柔性显示器件之间的分离过程；当采用上述第二种方式去除缓冲层5时，能够更好的保证对位于切割区域1和弯折区域2的薄膜晶体管阵列层6和缓冲层5进行刻蚀的刻蚀精度。
根据本公开的一些实施例，在柔性衬底4上形成多个膜层的步骤包括：在所述薄膜晶体管阵列层6上形成有机材料层7。
有机材料层7一般包括：空穴注入层、空穴传输层、发光层、电子传输层和电子注入层等，其中空穴注入层、空穴传输层、电子传输层和电子注入层可称为公共层，该公共层覆盖切割区域1和弯折区域2，而发光层可以形 成在显示器件区域、避开切割区域1和弯折区域2。对于覆盖切割区域1和弯折区域2的公共层，可采用刻蚀工艺同时去除位于切割区域1的公共层和位于弯折区域2的公共层，即可将位于切割区域1和位于弯折区域2的柔性衬底4暴露出来。
在去除有机材料层7时，可以直接通过掩膜板曝光、再利用显影液清洗的方式来去除。
根据本公开的一些实施例，在柔性衬底4上形成多个膜层的步骤包括：在所述有机材料层7上形成封装层8。
具体地，在制作完柔性显示器件包括的各功能膜层后，为了使柔性显示器件在实际应用时具有更长的使用寿命，需要对柔性显示器件进行封装，且所形成的封装层8覆盖切割区域1和弯折区域2，因此为了暴露出位于切割区域1和位于弯折区域2的柔性衬底4，可采用刻蚀工艺同时去除位于切割区域1的封装层8和位于弯折区域2的封装层8。
根据本公开的一些实施例，在柔性显示器件的制作过程中，需要对弯折区2执行两次刻蚀。为了减少额外的刻蚀工艺、降低制作成本，可以在针对弯折区2的第一次刻蚀和第二次刻蚀同时执行针对切割区域1的刻蚀处理。例如，可以在柔性衬底4上形成缓冲层5和薄膜晶体管阵列层6之后，与弯折区的第一次刻蚀工艺同步地执行针对切割区域1的第一次刻蚀，通过本次刻蚀工艺去除切割区域1上的薄膜晶体管阵列层6，暴露出缓冲层5。
接下来，与弯折区2的第二次刻蚀工艺同步地执行针对切割区域1的第二次刻蚀，通过本次刻蚀工艺去除切割区域1上的缓冲层5，暴露出缓冲层5下面的柔性衬底4。
在薄膜晶体管阵列层6上形成有机材料层7的步骤可以在上述第一次刻蚀和第二次刻蚀之间进行，即在去除切割区域1上的薄膜晶体管阵列层6、暴露出缓冲层5之后形成有机材料层7。或者，可以在第二次刻蚀之后形成有机材料层7，即在切割区域1的位置处，在去除缓冲层5之后形成有机材料层7。
由于在显示器件制作过程中，切割区域1处的有机材料层7可以通过掩膜曝光去除，因此形成有机材料层7的步骤不受限制，可以根据具体制作流 程的情况适当安排。
形成封装层8的步骤可以设置在上述第二次刻蚀工艺之后。
在弯折区2的第二次刻蚀工艺完成后，对于弯折区2的刻蚀处理已经结束。接下来需要对切割区域1执行进一步的刻蚀处理，例如通过一次刻蚀去除位于切割区域1的封装层8和柔性衬底4，暴露出切割区域1的玻璃载板3。至此各个柔性显示面板已经彼此分离开，并且各自贴附于玻璃载板3上，以便最终通过LLO实现窄边框面板的最终剥离。
进一步地，为了对形成在柔性衬底4上的TFT阵列层、有机材料发光层等膜层进行刻蚀，需要制备刻蚀阻挡层。在本公开的一些实施例中，形成刻蚀阻挡层包括形成第一阻挡图形91和第二阻挡图形92，所述第一阻挡图形和所述第二阻挡图形分别设置在所述切割区域的两侧以限定刻蚀宽度。具体地，在制作柔性显示器件包括的各膜层的过程中，可同时形成包括第一阻挡图形91和第二阻挡图形92的刻蚀阻挡层，且两个阻挡图形分别对应位于切割区域1的两侧，能够精确限定采用刻蚀工艺在切割区域1进行刻蚀时的刻蚀宽度，避免在对切割区域1进行刻蚀时，刻蚀掉柔性显示器件中位于切割区域1附近的其它区域的膜层，更好的保证了对切割区域1的膜层进行刻蚀的精度。
在本公开的一些实施例中，该柔性显示器的制作方法包括：
通过一次构图工艺形成所述刻蚀阻挡层和所述薄膜晶体管阵列层6中包括的栅极层；或者通过一次构图工艺形成所述刻蚀阻挡层和所述薄膜晶体管阵列层6中包括的源极层和漏极层。
在上述实施例中，所述刻蚀阻挡层均为单层的金属膜层，其可以与薄膜晶体管阵列层6中包括的栅极层通过一次构图工艺形成，也可以与薄膜晶体管阵列层6中包括的源极层和漏极层通过一次构图工艺形成。由此很好的避免了增加额外的构图工艺来制作刻蚀阻挡层，降低了成本。
在另外一些实施例中，刻蚀阻挡层包括的第一阻挡图形91和第二阻挡图形92均包括层叠设置的至少两层金属层。例如，刻蚀阻挡层包括第一金属层和第二金属层，则上述在柔性衬底上形成多个膜层的步骤包括：
通过第一次构图工艺形成所述刻蚀阻挡层中的第一金属层和所述薄膜晶 体管阵列层中包括的栅极层；以及通过第二次构图工艺形成所述刻蚀阻挡层中的第二金属层和所述薄膜晶体管阵列层中包括的源极层和漏极层。
当第一阻挡图形91和第二阻挡图形92均包括层叠设置的至少两层金属层时，该至少两层金属层可以与薄膜晶体管阵列层6中包括的各类金属层在同一次工艺中形成，例如：该至少两层金属层中的其中一层与薄膜晶体管阵列层6中包括的栅极层在同一次构图工艺中形成，该至少两层金属层中的另一层与薄膜晶体管阵列层6中包括的源极层和漏极层在同一次构图工艺中形成。此外，该至少两层金属层中的各个金属层也可以分别与薄膜晶体管阵列层6中包括的例如栅线、数据线、阳极层等膜层在同一次构图工艺中形成，此处不再详述。
值得注意，为了避免形成的刻蚀阻挡层对柔性显示器件产生影响，可尽量减小刻蚀阻挡层在垂直于切割区域1延伸方向的宽度，例如，设置刻蚀阻挡层在垂直于切割区域1延伸方向的宽度在小于10um，或者小于5um。
进一步地，在形成刻蚀阻挡层之后，上述实施例提供的制作方法还包括：在刻蚀阻挡层上形成保护层。
具体地，在形成刻蚀阻挡层之后，可在刻蚀阻挡层上形成保护层，该保护层可选为胶质材料，利用保护层覆盖刻蚀阻挡层，能够避免刻蚀过程对刻蚀阻挡层产生影响，从而更好的保证了刻蚀的精度。
本公开实施例还提供了一种柔性显示器件，其采用上述实施例提供的柔性显示器件的制作方法制作。
本公开提供的技术方案中，通过在载板上制作多个柔性显示器件，并采用刻蚀工艺去除位于相邻柔性显示器件之间的切割区域的膜层，实现将各显示器件彼此分离，然后再采用激光剥离技术将完成了刻蚀处理的柔性显示器件从载板上剥离，形成多个相互独立的柔性显示器件。可见，采用本公开实施例提供的技术方案制作柔性显示器件时，是采用刻蚀工艺将各显示器件彼此分离，不需要在柔性显示器件的外围预留一段距离作为切割裕量，相对于当前传统的激光切割技术具有更小的切割宽度，有利于实现超窄边框产品的设计。因此，采用本公开实施例提供的技术方案制作柔性显示器件时，能够在保证器件质量的同时，实现超窄边框的产品设计。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
可以理解，当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时，该元件可以“直接”位于另一元件“上”或“下”，或者可以存在中间元件。
在上述实施方式的描述中，具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (18)

  1. 一种柔性显示器件的制作方法，包括：
    在载板上制作多个柔性显示器件；
    对在载板上制作的柔性显示器件进行刻蚀以暴露出位于切割区域的载板，所述切割区域是位于相邻的柔性显示器件之间的预定区域；以及
    将完成刻蚀处理的柔性显示器件从所述载板上剥离以获得多个相互独立的柔性显示器件。
  2. 根据权利要求1所述的制作方法，其中所述在载板上制作多个柔性显示器件的步骤包括：
    在所述载板上形成柔性衬底；以及
    在所述柔性衬底上形成多个膜层，其中所述柔性衬底和所述多个膜层覆盖所述切割区域。
  3. 根据权利要求2所述的制作方法，其中所述在所述柔性衬底上形成多个膜层的步骤包括：
    形成刻蚀阻挡层，所述刻蚀阻挡层包括第一阻挡图形和第二阻挡图形，所述第一阻挡图形和所述第二阻挡图形分别设置在所述切割区域的两侧以限定刻蚀宽度。
  4. 根据权利要求2或3所述的制作方法，其中所述在载板上制作的柔性显示器件包括弯折区域，所述柔性衬底和所述多个膜层覆盖所述弯折区域。
  5. 根据权利要求4所述的制作方法，其中所述在所述柔性衬底上形成多个膜层的步骤包括：
    在所述柔性衬底上形成薄膜晶体管阵列层，其中所述薄膜晶体管阵列层包括栅极层、以及源极层和漏极层。
  6. 根据权利要求5所述的制作方法，其中所述在所述柔性衬底上形成多个膜层的步骤包括：
    通过一次构图工艺形成所述刻蚀阻挡层和所述薄膜晶体管阵列层中包括的栅极层；或，
    通过一次构图工艺形成所述刻蚀阻挡层和所述薄膜晶体管阵列层中包括的源极层和漏极层。
  7. 根据权利要求5所述的制作方法，其中所述刻蚀阻挡层包括第一金属层和第二金属层，所述在柔性衬底上形成多个膜层的步骤包括：
    通过第一次构图工艺形成所述刻蚀阻挡层中的第一金属层和所述薄膜晶体管阵列层中包括的栅极层；以及
    通过第二次构图工艺形成所述刻蚀阻挡层中的第二金属层和所述薄膜晶体管阵列层中包括的源极层和漏极层。
  8. 根据权利要求3-7中任一项所述的制作方法，其中在所述柔性衬底上形成薄膜晶体管阵列层的步骤之前，还包括：
    在所述柔性衬底上形成缓冲层。
  9. 根据权利要求5所述的制作方法，其中所述在柔性衬底上形成多个膜层的步骤包括：
    在所述薄膜晶体管阵列层上形成有机材料层。
  10. 根据权利要求9所述的制作方法，其中所述在柔性衬底上形成多个膜层的步骤包括：
    在所述有机材料层上形成封装层。
  11. 根据权利要求10所述的制作方法，其中对在载板上制作的柔性显示器件进行刻蚀以暴露出位于切割区域的载板的步骤包括：
    通过刻蚀依次去除所述多个膜层和所述柔性衬底，以暴露出位于切割区 域的载板。
  12. 根据权利要求5或8所述的制作方法，其中对在载板上制作的柔性显示器件进行刻蚀以暴露出位于切割区域的载板的步骤包括：
    通过一次刻蚀工艺同时去除位于所述切割区域的薄膜晶体管阵列层和位于所述弯折区域的薄膜晶体管阵列层。
  13. 根据权利要求12所述的制作方法，其中在通过一次刻蚀工艺同时去除位于所述切割区域的薄膜晶体管阵列层和位于所述弯折区域的薄膜晶体管阵列层之后，所述制作方法包括：
    通过一次刻蚀工艺同时去除位于所述切割区域的缓冲层和位于所述弯折区域的缓冲层。
  14. 根据权利要求9所述的制作方法，其中对在载板上制作的柔性显示器件进行刻蚀以暴露出位于切割区域的载板的步骤包括：
    通过曝光同时去除位于所述切割区域的有机材料层和位于所述弯折区域的有机材料层。
  15. 根据权利要求13所述的制作方法，其中在通过一次刻蚀工艺同时去除位于所述切割区域的缓冲层和位于所述弯折区域的缓冲层之后，所述制作方法包括：
    通过一次刻蚀工艺去除位于所述切割区域的封装层和柔性衬底层、以及位于所述弯折区域的封装层，暴露出位于所述切割区域的载板。
  16. 根据权利要求15所述的制作方法，其中所述柔性衬底包括层叠设置的第一柔性衬底、隔离层和第二柔性衬底，其中所述通过一次刻蚀工艺去除位于所述切割区域的封装层和柔性衬底层、以及位于所述弯折区域的封装层的步骤包括：
    通过一次刻蚀工艺去除位于所述切割区域的封装层、位于所述弯折区域 的封装层，以及位于所述切割区域的第二柔性衬底、隔离层和第一柔性衬底。
  17. 根据权利要求1所述的制作方法，其中将完成刻蚀处理的柔性显示器件从所述载板上剥离的步骤包括：
    采用激光剥离将完成刻蚀处理的柔性显示器件从所述载板上剥离。
  18. 一种柔性显示器件，其通过如权利要求1～17中任一项所述的柔性显示器件的制作方法制作。
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