WO2019109667A1 - 显示面板的封装方法、显示面板以及显示装置 - Google Patents

显示面板的封装方法、显示面板以及显示装置 Download PDF

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Publication number
WO2019109667A1
WO2019109667A1 PCT/CN2018/101085 CN2018101085W WO2019109667A1 WO 2019109667 A1 WO2019109667 A1 WO 2019109667A1 CN 2018101085 W CN2018101085 W CN 2018101085W WO 2019109667 A1 WO2019109667 A1 WO 2019109667A1
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Prior art keywords
thin film
film encapsulation
display panel
layer
inorganic material
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PCT/CN2018/101085
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English (en)
French (fr)
Inventor
孙泉钦
张嵩
肖昂
李端明
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京东方科技集团股份有限公司
成都京东方光电科技有限公司
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Priority to US16/328,498 priority Critical patent/US11404665B2/en
Publication of WO2019109667A1 publication Critical patent/WO2019109667A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/236—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers using printing techniques, e.g. applying the etch liquid using an ink jet printer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED

Definitions

  • At least one embodiment of the present disclosure is directed to a packaging method of a display panel, a display panel, and a display device.
  • TFE Thin Film Encapsulation
  • the common TFE package structure is: a film structure of an inorganic material + an organic material + an inorganic material, and the electroluminescent material is encapsulated inside the device to achieve water blocking and oxygen barrier purposes, thereby providing protection for the electroluminescent material.
  • an inorganic layer is generally formed by a chemical vapor deposition process (CVD), and when the inorganic layer plating process is performed, the display substrate is shielded by a CVD mask to coat the effective region.
  • CVD chemical vapor deposition process
  • At least one embodiment of the present disclosure provides a packaging method of a display panel, a display panel, and a display device.
  • At least one embodiment of the present disclosure provides a method for packaging a display panel, comprising: forming at least one thin film encapsulation inorganic material layer on a thin film encapsulation area of a display substrate; and forming a photoresist pattern on the thin film encapsulation inorganic material layer The thin film encapsulation inorganic material layer is etched using the photoresist pattern as a mask to form a thin film encapsulation inorganic layer including a first opening pattern.
  • the first opening pattern is located at least one of an edge and a middle portion of the thin film encapsulation inorganic layer.
  • the thin film encapsulation inorganic material layer is dry etched to form the first opening pattern.
  • the thin film encapsulation inorganic layer has a thickness of from 0.05 ⁇ m to 1 ⁇ m.
  • the thin film encapsulation inorganic material layer is formed by a chemical vapor deposition method, and the film encapsulation inorganic material layer has a film formation temperature of 50 ° C to 100 ° C.
  • the display substrate includes a plurality of electroluminescent cells arranged in an array, the thin film encapsulation inorganic layer covering the plurality of electroluminescent cells.
  • the packaging method of the display panel further includes: forming at least one thin film encapsulation organic layer on the thin film encapsulation area of the display substrate, and forming a plurality of the thin film encapsulation inorganic layers by a one-step patterning process, along a vertical
  • the thin film encapsulation organic layer and the thin film encapsulation inorganic layer are alternately disposed in a direction of the display substrate, wherein the thin film encapsulation organic layer includes a second opening pattern, and the first opening pattern is on the display substrate
  • the upper orthographic projection coincides with the orthographic projection of the second opening pattern on the display substrate.
  • the thin film encapsulation organic layer including the second opening pattern is directly formed using inkjet printing techniques.
  • the display substrate includes a bonding region
  • forming the thin film encapsulation inorganic material layer includes: covering a shielding strip on the binding region; depositing the photo on the display substrate covering the shielding strip The film encapsulates an inorganic material layer.
  • the display substrate includes a bonding region
  • forming the thin film encapsulation inorganic material layer includes: providing a shielding layer on the display substrate, wherein the shielding layer has an opening structure, and the shielding layer covers the a bonding region and the opening structure exposing the thin film encapsulation region; depositing the thin film encapsulation inorganic material layer on the display substrate on which the shielding layer is disposed.
  • At least one embodiment of the present disclosure provides a display panel formed according to the packaging method of the display panel of any of the above.
  • the display panel is a flexible display panel.
  • the display panel is an organic light emitting diode display panel.
  • At least one embodiment of the present disclosure provides a display device including any of the above display panels.
  • 1A is a schematic view showing a thin film encapsulation of a display substrate by using a mask
  • FIG. 1B is a schematic cross-sectional view of the display substrate of the cover mask shown in FIG. 1A taken along line AB;
  • FIG. 1C is a partial plan view of a display panel formed according to the packaging method illustrated in FIG. 1A;
  • 1D is a schematic view showing warpage of a protruding portion of a mask
  • FIG. 2 is a schematic flowchart of a method for packaging a display panel according to an embodiment of the present disclosure
  • 3A-3E are schematic diagrams showing process steps of a packaging method according to an embodiment of the present disclosure.
  • FIG. 4A is a schematic diagram of an exemplary CVD mask according to an embodiment of the present disclosure.
  • FIG. 4B is a schematic diagram of another exemplary CVD mask according to an embodiment of the present disclosure.
  • FIG. 5 is a partial plan structural diagram of a display panel according to an embodiment of the present disclosure.
  • 6A is a partial plan view showing a display panel according to an embodiment of the present disclosure.
  • FIG. 6B is a schematic cross-sectional view of the display panel shown in FIG. 6A taken along line AB;
  • FIG. 7A and FIG. 7B are schematic diagrams showing a manufacturing process of a display panel according to another example of an embodiment of the present disclosure.
  • FIG. 8 is a schematic plan view showing a display panel according to another example of an embodiment of the present disclosure.
  • FIG. 9 is a schematic plan view showing the structure of the packaged display panel.
  • FIG. 1A is a schematic view showing a thin film encapsulation of a display substrate by using a mask
  • FIG. 1B is a partial cross-sectional view of the display substrate covering the mask shown in FIG. 1A taken along line AB.
  • a partial region on the display substrate 10 is blocked by the mask 11 on the display substrate 10, and then the mask 11 is applied by a plasma enhanced chemical vapor deposition (PECVD) method.
  • PECVD plasma enhanced chemical vapor deposition
  • the uncoated film encapsulation area is deposited with a coating.
  • the mask 11 here is a mask for patterning a thin film package region.
  • the thin film encapsulation area is a thin film encapsulation area having an opening at the edge shown in FIG. 1A, that is, the mask 11 includes a protruding portion 1101 to block the deposition material, thereby forming a thin film encapsulation inorganic layer having an opening pattern at the edge (ie, the edge includes a notch). .
  • FIG. 1C is a partial plan view of a display panel formed according to the packaging method illustrated in FIG. 1A.
  • the thin film encapsulation inorganic layer 20 as shown in FIG. 1C is formed by using the mask 11 shown in FIG. 1A, and the edge of the thin film encapsulation inorganic layer 20 extending along X includes an opening pattern, for example, the X of the thin film encapsulation inorganic layer 20 extends along X.
  • the side has a gap.
  • the display panel is laser-cut (the laser cutting line 13 is shown), that is, the display panel near the position of the opening pattern of the thin film encapsulation inorganic layer 20 is laser-cut to form a package with the film.
  • the display panel of the inorganic layer 20 has the same pattern.
  • the display panel further includes a binding area 12 in addition to the thin film encapsulation area.
  • FIG. 1D is a schematic view showing warpage of a protruding portion of a mask.
  • the inventors of the present application found that the projection of the mask 11 for shielding the display substrate 10 when the display substrate 10 is continuously coated by the plasma enhanced chemical vapor deposition method during the coating process
  • the edge of the portion 1101 may be warped upward, resulting in uncontrolled areas where the coating is deposited.
  • a deposited thin film encapsulation inorganic layer deposited along the deposition path 30 noted in Figure ID
  • Embodiments of the present disclosure provide a packaging method of a display panel, a display panel, and a display device.
  • the packaging method of the display panel comprises: forming at least one thin film encapsulation inorganic material layer on a thin film encapsulation area of the display substrate; forming a photoresist pattern on the thin film encapsulation inorganic material layer; and encapsulating the thin film by using the photoresist pattern as a mask
  • the inorganic material layer is etched to form a thin film encapsulation inorganic layer including the first opening pattern.
  • the packaging method of the display panel replaces the mask used in the chemical vapor deposition (CVD) process with a photoresist mask, thereby avoiding problems such as inaccurate coating area caused by long-term continuous use of the CVD mask.
  • CVD chemical vapor deposition
  • FIG. 2 is a schematic flowchart of a method for packaging a display panel according to an embodiment of the present disclosure.
  • FIG. 3A to FIG. 3E are schematic diagrams showing process steps of a packaging method according to an embodiment of the present disclosure. . As shown in Figure 2 and Figures 3A-3E, the specific steps are as follows:
  • S101 Form at least one thin film encapsulation inorganic material layer on the thin film encapsulation area of the display substrate.
  • a thin film encapsulation inorganic material layer 200 is formed by a plasma enhanced chemical vapor deposition method on a display substrate other than the bonding region 102.
  • the material of the thin film encapsulation inorganic material layer 200 may include a metal oxide or a metal nitride.
  • the material of the thin film encapsulation inorganic material layer 200 may be silicon nitride or silicon oxynitride or the like.
  • the display substrate includes a thin film encapsulation region 101 (a region where the dummy turns out) and a bonding region 102, and a thin film encapsulation inorganic material layer 200 is formed in the thin film encapsulation region 101.
  • FIG. 3A is exemplified by forming a display panel.
  • At least one thin film encapsulation inorganic material layer 200 is formed on the display substrate by a chemical vapor deposition method, and the film encapsulation temperature of the thin film encapsulation inorganic material layer 200 is 50° C. to 100° C.
  • the film-forming inorganic material layer 200 has a film forming temperature of 60 ° C to 70 ° C.
  • the film-forming inorganic material layer 200 has a film forming temperature of 80 ° C to 90 ° C.
  • a photoresist layer 301 is formed on the entire display substrate, that is, a photoresist layer 301 is coated on the thin film encapsulation inorganic material layer and the bonding region.
  • the photoresist layer 301 is patterned to form a photoresist pattern 300.
  • FIG. 3C exemplifies the photoresist pattern 300 having the photoresist pattern 300 as an edge including an opening pattern, and the opening pattern exposes the thin film encapsulation inorganic material layer 200 under the photoresist pattern 300.
  • S103 etching the thin film encapsulation inorganic material layer by using the photoresist pattern as a mask to form a thin film encapsulation inorganic layer including the first opening pattern.
  • the photoresist pattern 300 is used as a mask for encapsulating the inorganic material layer 200, and the thin film encapsulation inorganic material layer 200 is dry etched to form a thin film including the first opening pattern 211.
  • the inorganic layer 210 is encapsulated.
  • the first opening pattern 211 is located at an edge of the thin film encapsulation inorganic layer 210.
  • the edge of the thin film encapsulation inorganic layer 210 extending in the X direction includes the first opening pattern 211.
  • the "first opening pattern 211 is located at the edge of the thin film encapsulation inorganic layer 210" means that there is a notch on at least one side of the thin film encapsulation inorganic layer 210.
  • FIG. 3E exemplifies a display panel formed as a display panel.
  • a plurality of display panels are integrally packaged, and then a plurality of display panels are separated by cutting.
  • 4A is a schematic view showing a CVD mask formed on a display substrate, which is used to form a plurality of display panels, according to an example of the embodiment. As shown in FIG. 4A, since the display substrate includes a bonding region (the bonding region 102 shown in FIG.
  • forming the thin film encapsulation inorganic material layer includes: first covering the shielding strip 501 on the bonding region (ie, the CVD mask) And then depositing a thin film encapsulation inorganic material layer on the display substrate 100 covering the shielding strip 501. At this time, the thin film inorganic material layer deposited on the display substrate 100 is deposited on the thin film encapsulation area 101 and deposited on the thin film encapsulation layer. The location of the unbound zone outside of zone 101.
  • the thin film encapsulation inorganic layer having the first opening pattern may be formed according to the steps of FIGS. 3B to 3E.
  • FIG. 4B is a schematic view showing a CVD mask formed on a display substrate according to another example of the embodiment, and the display substrate illustrated in FIG. 4B is used to form a plurality of display panels.
  • the display substrate 100 includes a bonding region (the bonding region 102 shown in FIG. 3E)
  • forming the thin film encapsulation inorganic material layer includes disposing the shielding layer 502 (ie, a CVD mask) on the display substrate 100.
  • the occlusion layer 502 covers the bond area and does not cover the thin film encapsulation area. That is, the occlusion layer 502 includes an opening structure 5021 configured to expose the thin film encapsulation area.
  • the occlusion layer 502 is a CVD mask including a plurality of opening structures 5021 having a size no smaller than the size of the thin film encapsulation region to expose a thin film encapsulation region for depositing a thin film encapsulation inorganic material layer.
  • the step of forming the thin film encapsulation inorganic material layer in this example further includes depositing a thin film encapsulation inorganic material layer on the display substrate 100 on which the occlusion layer 502 is disposed.
  • the thin film encapsulation inorganic layer having the first opening pattern may be formed according to the steps of FIGS. 3B to 3E.
  • the display substrate provided in this embodiment further includes a plurality of electroluminescent units 110 arranged in an array, that is, in the X direction and the Y direction.
  • the plurality of electroluminescent units 110 are arranged, and the thin film encapsulation inorganic layer 210 covers the plurality of electroluminescent units 110.
  • the plurality of electroluminescent units 110 are organic light emitting diode units.
  • the thickness of the thin film encapsulation inorganic layer 210 is from 0.6 ⁇ m to 1 ⁇ m in a direction perpendicular to the display substrate.
  • the embodiment is not limited thereto, and the thickness of the inorganic layer of the thin film encapsulation may be made thinner.
  • the thickness of the inorganic layer of the thin film encapsulation may be 0.05 ⁇ m to 1 ⁇ m, or 0.05 ⁇ m to 0.3 ⁇ m or the like. Thinning the thin film encapsulation inorganic layer, that is, thinning the thin film encapsulation layer of the package display substrate, can reduce the thickness of the display panel to make the display panel light and thin.
  • the thin film encapsulation inorganic layer is used for encapsulating the display substrate to prevent water vapor and oxygen from eroding the organic light emitting diode in the display substrate.
  • FIG. 6A is a partial plan view of a display panel provided by the embodiment
  • FIG. 6B is a cross-sectional view of the display panel shown in FIG. 6A taken along line AB.
  • forming the display panel further includes: forming at least one thin film encapsulation organic layer 400 on the thin film encapsulation area of the display substrate, the thin film encapsulation organic layer 400 including the second opening pattern 401, and the first opening pattern
  • the orthographic projection on the display substrate 211 coincides with the orthographic projection of the second opening pattern 401 on the display substrate.
  • the coincidence here includes complete coincidence and approximately coincidence.
  • the thin film encapsulation layer formed by the encapsulation method provided in this embodiment includes two layers of the thin film encapsulation inorganic layer 210 and the thin film encapsulation organic layer 400 between the two thin film encapsulation inorganic layers 210, that is, The thin film encapsulation organic layer 400 and the thin film encapsulation inorganic layer 210 are alternately disposed in a direction perpendicular to the display substrate.
  • the display panel provided by the embodiment of the present disclosure is not limited to including two layers of thin film encapsulation inorganic layers, for example, may also include three layers of a plurality of thin film encapsulation inorganic layers, and adjacent thin film encapsulation inorganic layers (here, "thin film encapsulation inorganic layer” includes A thin film encapsulation organic layer is formed between the single inorganic layer or the combined inorganic layer formed by combining the multiple inorganic layers.
  • the thin film encapsulation organic layer 400 is formed on the side of the first thin film encapsulation inorganic layer away from the display substrate. In order to clearly show the thin film encapsulation organic layer 400, FIG. 6A is not shown in the thin film encapsulation. The organic layer 400 is away from the second layer of the thin film encapsulating inorganic layer on the side of the display substrate.
  • the present embodiment directly forms the thin film encapsulation organic layer 400 including the second opening pattern 410 on the thin film encapsulation inorganic layer 210 by using an inkjet printing technique, thereby saving the number of masks.
  • the step of forming the thin film encapsulation inorganic layer may further include: forming two layers of the thin film encapsulation inorganic material layer on the thin film encapsulation area, and the two layers of the thin film
  • the encapsulating inorganic material layer forms a two-layer thin film encapsulation inorganic layer 210 by a one-step patterning process, thereby saving the mask process.
  • a first layer of the thin film encapsulation inorganic material layer may be formed on the thin film encapsulation region, and then a thin film encapsulation organic layer including the second opening pattern is formed on the thin film encapsulation inorganic material layer, and then formed on the thin film encapsulation organic layer.
  • the second layer of the film encapsulates the inorganic material layer, and finally a two-layer film encapsulation inorganic material layer is subjected to a one-step patterning process to form a two-layer thin film encapsulation inorganic layer.
  • the embodiment is not limited thereto, and the two layers of the thin film encapsulation inorganic material layers may be separately patterned. That is, a first thin film encapsulation inorganic material layer is formed on the thin film encapsulation region, and a first thin film encapsulation inorganic layer including the first opening pattern is patterned, and then a second opening pattern is formed on the thin film encapsulation inorganic layer.
  • the thin film encapsulation organic layer is further formed on the thin film encapsulation organic layer to form a second thin film encapsulation inorganic material layer, and patterned to form a second thin film encapsulation inorganic layer including the first opening pattern.
  • FIG. 7A and FIG. 7B are schematic diagrams showing a manufacturing process of a display panel according to another example of the embodiment.
  • the opening pattern included in the photoresist pattern 300 in the present example is located at the middle thereof, and the film is encapsulated with the photoresist pattern 300 as a mask.
  • the material layer 200 is etched to form a thin film encapsulation inorganic layer 210 including a first opening pattern 211, which is located in the middle of the thin film encapsulation inorganic layer 210.
  • the "middle portion" is opposite to the "edge" shown in FIG.
  • the first opening pattern 211 is located at the middle of the thin film encapsulation inorganic layer 210 to indicate that the first opening pattern 211 is the shortest from either side of the thin film encapsulation inorganic layer 210.
  • the distance is greater than zero.
  • the present example is exemplified by the circular shape of the first opening pattern 211, but is not limited thereto, and may be a rectangle or other graphic.
  • FIG. 8 is a schematic diagram of a planar structure of a display panel provided by another example of the embodiment.
  • the first opening pattern 211 in this example includes two portions at the edge and the middle of the thin film encapsulation inorganic layer 210.
  • the first opening pattern 211 located at the edge of the thin film encapsulation inorganic layer 210 is rectangular, and the first opening pattern 211 located in the middle of the thin film encapsulation inorganic layer 210 is circular.
  • the specific shape of the first opening pattern 211 is used in this example. No restrictions.
  • the packaging method provided in this embodiment replaces the chemical vapor deposition (CVD) mask with a photoresist mask.
  • CVD chemical vapor deposition
  • the CVD mask can be prevented from being continuous for a long time.
  • the problem of inaccurate coating area caused by deformation is used; on the other hand, since the first opening pattern formed on the inorganic layer of the thin film encapsulation cannot be located in the middle of the inorganic layer of the thin film encapsulation by using the CVD mask as a mask, the embodiment
  • the use of a photoresist mask can overcome the drawback that the CVD mask cannot form a first opening pattern in the middle of the thin film encapsulation inorganic layer.
  • 9 is a schematic plan view showing the planar structure of the packaged display panel.
  • the display panel can be cut, that is, the position of the first opening pattern adjacent to the thin film encapsulation inorganic layer 210.
  • the display panel is laser cut to form a display panel having the same pattern as the thin film encapsulation inorganic layer 210.
  • 9 is an example in which the side extending in the X direction of the display panel includes the opening pattern 103 (ie, the notch 103), but is not limited thereto, as long as the display panel has a shaped display area including the first opening pattern.
  • the display panel may also be a regular rectangular or circular regular shape, but the display area is the middle or the edge includes an open display area.
  • FIG. 9 Another embodiment of the present disclosure provides a display panel.
  • the planar structure of the display panel is as shown in FIG. 9.
  • the display panel is a display panel formed by the packaging method provided by the above embodiments.
  • At least one of an edge and a middle portion of the display panel includes an opening pattern.
  • the display panel includes an opening pattern 103 (ie, a notch 103) as an edge, but is not limited thereto, as long as the display panel has a display area including a first opening pattern.
  • the display panel may also be a regular rectangular or circular regular shape, but the display area is a display area in which the middle portion or the edge includes an opening.
  • the display panel is a flexible display panel.
  • the display panel is an organic light emitting diode display panel.
  • Another embodiment of the present disclosure provides a display device including the display panel provided by the above embodiments.
  • the display device may be an Organic Light-Emitting Diode (OLED) display device, and any display function including a television, a digital camera, a mobile phone, a watch, a tablet computer, a notebook computer, a navigator, and the like including the display device.
  • OLED Organic Light-Emitting Diode
  • the product or component is not limited to this embodiment.

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  • Electroluminescent Light Sources (AREA)

Abstract

一种显示面板的封装方法、显示面板以及显示装置。该显示面板的封装方法包括：在显示基板（100）的薄膜封装区（101）上形成至少一层薄膜封装无机材料层（200）；在薄膜封装无机材料层（200）上制作光刻胶图案（300）；以光刻胶图案（300）为掩模对薄膜封装无机材料层（200）进行刻蚀以形成包括第一开口图案（211）的薄膜封装无机层（210）。该显示面板的封装方法以光刻胶掩模代替了化学气相沉积（CVD）掩模板，从而避免了CVD掩模板因长时间连续使用形变而造成的镀膜区域不准确等问题。

Description

显示面板的封装方法、显示面板以及显示装置
本申请要求于2017年12月6日递交的中国专利申请第201711279313.5号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。
技术领域
本公开至少一个实施例涉及一种显示面板的封装方法、显示面板以及显示装置。
背景技术
有机发光二极管显示装置对水蒸气和氧气非常敏感，渗透进入器件内部的水蒸气和氧气是影响器件寿命的主要因素，因此薄膜封装(Thin Film Encapsulation，TFE)对有机发光二极管器件非常重要。目前常见的TFE封装结构为：无机材料+有机材料+无机材料的膜层结构，将电致发光材料封装在器件内部，以达到阻水、阻氧目的，进而对电致发光材料提供了保护。封装工艺中，一般采用化学气相沉积工艺(CVD)来制作无机层，在进行无机层镀膜工艺时，会采用CVD Mask对显示基板进行遮挡，从而对有效区域进行镀膜。
发明内容
本公开的至少一实施例提供一种显示面板的封装方法、显示面板以及显示装置。
本公开的至少一实施例提供一种显示面板的封装方法，包括：在显示基板的薄膜封装区上形成至少一层薄膜封装无机材料层；在所述薄膜封装无机材料层上制作光刻胶图案；以所述光刻胶图案为掩模对所述薄膜封装无机材料层进行刻蚀以形成包括第一开口图案的薄膜封装无机层。
在一些示例中，所述第一开口图案位于所述薄膜封装无机层的边缘和中部的至少之一。
在一些示例中，对所述薄膜封装无机材料层采用干法刻蚀以形成所述第一开口图案。
在一些示例中，所述薄膜封装无机层的厚度为0.05μm-1μm。
在一些示例中，采用化学气相沉积方法形成所述薄膜封装无机材料层，且所述薄膜封装无机材料层的成膜温度为50℃-100℃。
在一些示例中，所述显示基板上包括阵列排布的多个电致发光单元，所述薄膜封装无机层覆盖所述多个电致发光单元。
在一些示例中，显示面板的封装方法还包括：在所述显示基板的薄膜封装区上形成至少一层薄膜封装有机层，以及采用一步图案化工艺形成多层所述薄膜封装无机层，沿垂直于所述显示基板的方向，所述薄膜封装有机层与所述薄膜封装无机层交替设置，其中，所述薄膜封装有机层包括第二开口图案，且所述第一开口图案在所述显示基板上的正投影与所述第二开口图案在所述显示基板上的正投影重合。
在一些示例中，采用喷墨打印技术直接形成包括所述第二开口图案的所述薄膜封装有机层。
在一些示例中，所述显示基板包括绑定区，形成所述薄膜封装无机材料层包括：在所述绑定区上覆盖遮挡条；在覆盖所述遮挡条的所述显示基板上沉积所述薄膜封装无机材料层。
在一些示例中，所述显示基板包括绑定区，形成所述薄膜封装无机材料层包括：在所述显示基板上设置遮挡层，其中所述遮挡层具有开口结构，所述遮挡层覆盖所述绑定区且所述开口结构暴露所述薄膜封装区；在设置所述遮挡层的所述显示基板上沉积所述薄膜封装无机材料层。
本公开的至少一实施例提供一种根据上述任一种的显示面板的封装方法形成的显示面板。
在一些示例中，所述显示面板为柔性显示面板。
在一些示例中，所述显示面板为有机发光二极管显示面板。
本公开的至少一实施例提供一种显示装置，包括上述任一种显示面板。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例，而非对本公开的限制。
图1A为采用掩模板对显示基板进行薄膜封装的示意图；
图1B为图1A所示的覆盖掩模板的显示基板沿AB线所截的截面示意图；
图1C为根据图1A所示的封装方法形成的显示面板的局部平面示意图；
图1D为掩模板的突出部分翘曲的示意图；
图2为本公开一实施例提供的显示面板的封装方法的示意性流程图；
图3A-图3E为本公开一实施例提供的封装方法的工艺步骤示意图；
图4A为本公开一实施例的一示例示出的CVD掩模的示意图；
图4B为本公开一实施例的另一示例示出的CVD掩模的示意图；
图5为本公开一实施例提供的显示面板的局部平面结构示意图；
图6A为本公开一实施例提供的显示面板的局部平面结构示意图；
图6B为图6A所示的显示面板沿AB线所截的截面示意图；
图7A和图7B为本公开一实施例的另一示例提供的显示面板的制作流程示意图；
图8为本公开一实施例的另一示例提供的显示面板的平面结构示意图；
图9为封装后的显示面板的平面结构示意图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“上”、“下”等仅用于表示相对位置关系。
图1A为采用掩模板对显示基板进行薄膜封装的示意图，图1B为图1A所示的覆盖掩模板的显示基板沿AB线所截的局部截面示意图。如图1A和图1B所示，在显示基板10上利用掩模板11遮挡显示基板10上的部分区域，然后采用等离子体增强化学气相沉积(Plasma Enhanced Chemical Vapor Deposition，PECVD)的方法对掩模板11未遮挡的薄膜封装区沉积镀膜。这里的掩模板11 是用于图案化形成薄膜封装区的掩模板。例如，薄膜封装区为图1A所示的边缘具有开口的薄膜封装区，即，掩模板11包括突出部分1101以遮挡沉积材料，进而形成边缘具有开口图案(即边缘包括缺口)的薄膜封装无机层。
图1C为根据图1A所示的封装方法形成的显示面板的局部平面示意图。采用图1A所示的掩模板11形成了如图1C所示的薄膜封装无机层20，该薄膜封装无机层20的沿X延伸的边缘包括开口图案，例如薄膜封装无机层20的沿X延伸的边具有一缺口。在形成封装薄膜之后，对显示面板进行激光切割(图中示出了激光切割线13)，即，对靠近薄膜封装无机层20的开口图案的位置的显示面板进行激光切割，形成具有与薄膜封装无机层20的图案相同的显示面板。该显示面板在薄膜封装区之外还包括绑定区12。
图1D为掩模板的突出部分翘曲的示意图。如图1D所示，在研究中，本申请的发明人发现：镀膜过程中，采用等离子体增强化学气相沉积方法对显示基板10进行连续镀膜时，用于遮挡显示基板10的掩模板11的突出部分1101的边缘会出现向上翘曲的现象，从而导致被沉积镀膜的区域不受控制。例如沉积的薄膜封装无机层(沿图1D中标注的沉积路径30沉积)会延伸至显示面板的待切割线以外，在后续的切割过程中会造成薄膜封装层的损伤。
本公开的实施例提供一种显示面板的封装方法、显示面板以及显示装置。该显示面板的封装方法包括：在显示基板的薄膜封装区上形成至少一层薄膜封装无机材料层；在薄膜封装无机材料层上制作光刻胶图案；以光刻胶图案为掩模对薄膜封装无机材料层进行刻蚀以形成包括第一开口图案的薄膜封装无机层。该显示面板的封装方法以光刻胶掩模代替了化学气相沉积(CVD)过程所用的掩模板，从而避免了CVD掩模板因长时间连续使用形变而造成的镀膜区域不准确等问题。
下面结合附图对本公开实施例提供的显示面板的封装方法、显示面板以及显示装置进行描述。
本公开一实施例提供一种显示面板的封装方法，图2为本实施例提供的显示面板的封装方法的示意性流程图，图3A-图3E为本实施例提供的封装方法的工艺步骤示意图。如图2和图3A-图3E所示，具体步骤如下：
S101：在显示基板的薄膜封装区上形成至少一层薄膜封装无机材料层。
例如，如图3A所示，在显示基板上除绑定区102以外的区域采用等离子体增强化学气相沉积方法形成薄膜封装无机材料层200。
例如，薄膜封装无机材料层200的材料可以包括金属氧化物或者金属氮化物。
例如，薄膜封装无机材料层200的材料可以为氮化硅或者氮氧化硅等。
例如，显示基板包括薄膜封装区101(虚线圈出的区域)和绑定区102，在薄膜封装区101形成一层薄膜封装无机材料层200。图3A以形成一个显示面板为例。
例如，本实施例采用化学气相沉积方法在显示基板上形成至少一层薄膜封装无机材料层200，薄膜封装无机材料层200的成膜温度为50℃-100℃。
例如，薄膜封装无机材料层200的成膜温度为60℃-70℃。
例如，薄膜封装无机材料层200的成膜温度为80℃-90℃。
S102：在薄膜封装无机材料层上制作光刻胶图案。
例如，如图3B所示，在整个显示基板上形成光刻胶层301，即，在薄膜封装无机材料层以及绑定区上涂覆光刻胶层301。
例如，如图3C所示，对光刻胶层301图案化以形成光刻胶图案300。
例如，图3C以光刻胶图案300为边缘包括开口图案的光刻胶图案300为例，且该开口图案暴露出位于光刻胶图案300下方的薄膜封装无机材料层200。
S103：以光刻胶图案为掩模对薄膜封装无机材料层进行刻蚀以形成包括第一开口图案的薄膜封装无机层。
例如，如图3D和图3E所示，以光刻胶图案300为薄膜封装无机材料层200的掩模板，对薄膜封装无机材料层200采用干法刻蚀以形成包括第一开口图案211的薄膜封装无机层210。
例如，本实施例以第一开口图案211位于薄膜封装无机层210的边缘为例。例如，如图3E所示，薄膜封装无机层210的沿X方向延伸的边缘包括第一开口图案211。这里的“第一开口图案211位于薄膜封装无机层210的边缘”指薄膜封装无机层210的至少一条边上具有缺口。
图3E以形成的显示面板为一个显示面板为例，一般的实际生产中会先整体封装形成多个显示面板，然后通过切割以分离多个显示面板。图4A为本实施例的一示例示出的在显示基板上形成的CVD掩模的示意图，图4A所示的显示基板用于形成多个显示面板。如图4A所示，由于显示基板包括绑定区(图3E所示的绑定区102)，因此，形成薄膜封装无机材料层包括：先在绑定区上覆盖遮挡条501(即CVD掩模)，然后在覆盖遮挡条501的显示基板100上沉 积薄膜封装无机材料层，此时，沉积在显示基板100上的薄膜无机材料层既沉积在了薄膜封装区101上，又沉积在了薄膜封装区101以外的非绑定区的位置。在形成薄膜封装无机材料层以后，可根据图3B至图3E的步骤形成具有第一开口图案的薄膜封装无机层。
图4B为本实施例的另一示例示出的在显示基板上形成的CVD掩模的示意图，图4B所示的显示基板用于形成多个显示面板。如图4B所示，由于显示基板100包括绑定区(图3E所示的绑定区102)，因此，形成薄膜封装无机材料层包括在显示基板100上设置遮挡层502(即CVD掩模)，该遮挡层502覆盖绑定区且未覆盖薄膜封装区，即，遮挡层502包括开口结构5021，该开口结构5021被配置为暴露薄膜封装区。
例如，该遮挡层502为包括多个开口结构5021的CVD掩模，开口结构5021的尺寸不小于薄膜封装区的尺寸以暴露用于沉积薄膜封装无机材料层的薄膜封装区。本示例中形成薄膜封装无机材料层的步骤还包括在设置遮挡层502的显示基板100上沉积薄膜封装无机材料层。在形成薄膜封装无机材料层以后，可根据图3B至图3E的步骤形成具有第一开口图案的薄膜封装无机层。
图5为本实施例提供的显示面板的局部平面结构示意图，如图5所示，本实施例提供的显示基板还包括阵列排布的多个电致发光单元110，即沿X方向和Y方向排列的多个电致发光单元110，薄膜封装无机层210覆盖多个电致发光单元110。
例如，多个电致发光单元110为有机发光二极管单元。
例如，沿垂直于显示基板的方向，薄膜封装无机层210的厚度为0.6μm-1μm。本实施例不限于此，薄膜封装无机层的厚度还可以做得更薄，例如，薄膜封装无机层的厚度还可以为0.05μm-1μm，或者0.05μm-0.3μm等。将薄膜封装无机层制作的更薄，即将封装显示基板的薄膜封装层变薄，可以减薄显示面板的厚度以使显示面板轻薄化。以本实施例提供的显示基板为有机发光二极管显示基板为例，薄膜封装无机层用于对显示基板进行封装，以防止水蒸气和氧气对显示基板中的有机发光二极管进行侵蚀。
例如，图6A为本实施例提供的显示面板的局部平面结构示意图，图6B为图6A所示的显示面板沿AB线所截的截面示意图。如图6A和图6B所示，形成显示面板还包括：在显示基板的薄膜封装区上形成至少一层薄膜封装有机层400，薄膜封装有机层400包括第二开口图案401，且第一开口图案211在 显示基板上的正投影与第二开口图案401在显示基板上的正投影重合。这里的重合包括完全重合和大致重合。
例如，如图6B所示，本实施例以提供的封装方法形成的薄膜封装层包括两层薄膜封装无机层210以及位于两层薄膜封装无机层210之间的薄膜封装有机层400为例，即，沿垂直于显示基板的方向，薄膜封装有机层400与薄膜封装无机层210交替设置。本公开的实施例提供的显示面板不限于包括两层薄膜封装无机层，例如还可以包括三层等多层薄膜封装无机层，且相邻薄膜封装无机层(这里的“薄膜封装无机层”包括单层无机层或者多层无机层组合形成的组合无机层)之间形成有薄膜封装有机层。
需要说明的是，图6A以该薄膜封装有机层400形成在第一层薄膜封装无机层远离显示基板的一侧为例，为了清楚的显示薄膜封装有机层400，图6A没有示出位于薄膜封装有机层400远离显示基板的一侧的第二层薄膜封装无机层。
例如，本实施例采用喷墨打印技术在薄膜封装无机层210上直接形成包括第二开口图案410的薄膜封装有机层400，由此，节省了掩模板的数量。
例如，以形成如图6B所示的两层薄膜封装无机层210为例，形成薄膜封装无机层的步骤还可以包括：在薄膜封装区上形成两层薄膜封装无机材料层，且对两层薄膜封装无机材料层采用一步图案化工艺形成两层薄膜封装无机层210，因此可以节省掩模工艺。也就是，还可以在薄膜封装区上形成第一层薄膜封装无机材料层，然后在该薄膜封装无机材料层上形成包括第二开口图案的薄膜封装有机层，再在该薄膜封装有机层上形成第二层薄膜封装无机材料层，最后对两层薄膜封装无机材料层采用一步图案化工艺以形成两层薄膜封装无机层。
本实施例不限于此，也可以分别对两层薄膜封装无机材料层单独进行图案化。也就是，在薄膜封装区上形成第一层薄膜封装无机材料层，并图案化形成包括第一开口图案的第一层薄膜封装无机层，然后在该薄膜封装无机层上形成包括第二开口图案的薄膜封装有机层，再在该薄膜封装有机层上形成第二层薄膜封装无机材料层，并图案化形成包括第一开口图案的第二层薄膜封装无机层。
例如，图7A和图7B为本实施例的另一示例提供的显示面板的制作流程示意图。如图7A和图7B所示，与图3D和图3E不同的是：本示例中的光刻 胶图案300中包括的开口图案位于其中部，以光刻胶图案300为掩模对薄膜封装无机材料层200进行刻蚀以形成包括第一开口图案211的薄膜封装无机层210，该第一开口图案211位于薄膜封装无机层210的中部。这里的“中部”是与图3E所示的“边缘”相对的，第一开口图案211位于薄膜封装无机层210的中部表示该第一开口图案211与距薄膜封装无机层210的任一边的最短距离大于零。
本示例以第一开口图案211为圆形为例，但不限于此，还可以是矩形或者其他图形。
例如，图8为本实施例的另一示例提供的显示面板的平面结构示意图。如图8所示，与图3E不同的是：本示例中的第一开口图案211包括位于薄膜封装无机层210的边缘和中部的两部分。本示例以位于薄膜封装无机层210边缘的第一开口图案211为矩形，位于薄膜封装无机层210中部的第一开口图案211的为圆形为例，本示例对第一开口图案211的具体形状不作限制。
本实施例提供的封装方法以光刻胶掩模代替了化学气相沉积(CVD)掩模板，一方面，当第一开口图案位于薄膜封装无机层的边缘时，可以避免CVD掩模板因长时间连续使用形变而造成的镀膜区域不准确的问题；另一方面，由于采用CVD掩模板作为掩模，在薄膜封装无机层上形成的第一开口图案不能位于薄膜封装无机层的中部，因此本实施例采用光刻胶掩模可以克服CVD掩模板不能在薄膜封装无机层的中部形成第一开口图案的缺陷。
图9为封装后的显示面板的平面结构示意图，如图9所示，对显示面板完成封装步骤后，可以对显示面板进行切割，即，对靠近薄膜封装无机层210的第一开口图案的位置的显示面板进行激光切割，形成具有与薄膜封装无机层210的图案相同的显示面板。图9以该显示面板为沿X方向延伸的边包括开口图案103(即缺口103)为例，但不限于此，只要该显示面板具有包括第一开口图案的异形显示区即可。例如，该显示面板也可以是常规的矩形或圆形等规则形状，但其显示区为中部或边缘包括开口的显示区。
本公开的另一实施例提供一种显示面板，该显示面板的平面结构图如图9所示，该显示面板为由上述实施例提供的封装方法形成的显示面板。
在一些示例中，该显示面板的边缘和中部的至少之一包括开口图案。图9以该显示面板为边缘包括开口图案103(即缺口103)为例，但不限于此，只要该显示面板具有包括第一开口图案的显示区即可。例如，该显示面板也可以 是常规的矩形或圆形等规则形状，但其显示区为中部或边缘包括开口的显示区。
在一些示例中，该显示面板为柔性显示面板。
在一些示例中，该显示面板为有机发光二极管显示面板。
本公开的另一实施例提供一种显示装置，该显示装置包括上述实施例提供的显示面板。
例如，该显示装置可以为有机发光二极管(Organic Light-Emitting Diode，OLED)显示装置，以及包括该显示装置的电视、数码相机、手机、手表、平板电脑、笔记本电脑、导航仪等任何具有显示功能的产品或者部件，本实施例不限于此。
有以下几点需要说明：
(1)除非另作定义，本公开实施例以及附图中，同一标号代表同一含义。
(2)本公开实施例附图中，只涉及到与本公开实施例涉及到的结构，其他结构可参考通常设计。
(3)为了清晰起见，在用于描述本公开的实施例的附图中，层或区域被放大。可以理解，当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时，该元件可以“直接”位于另一元件“上”或“下”，或者可以存在中间元件。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (12)

  1. 一种显示面板的封装方法，包括：
    在显示基板的薄膜封装区上形成至少一层薄膜封装无机材料层；
    在所述薄膜封装无机材料层上制作光刻胶图案；
    以所述光刻胶图案为掩模对所述薄膜封装无机材料层进行刻蚀以形成包括第一开口图案的薄膜封装无机层。
  2. 根据权利要求1所述的显示面板的封装方法，其中，所述第一开口图案位于所述薄膜封装无机层的边缘和中部的至少之一。
  3. 根据权利要求1或2所述的显示面板的封装方法，其中，对所述薄膜封装无机材料层采用干法刻蚀以形成所述第一开口图案。
  4. 根据权利要求1-3任一项所述的显示面板的封装方法，其中，采用化学气相沉积方法形成所述薄膜封装无机材料层，且所述薄膜封装无机材料层的成膜温度为50℃-100℃。
  5. 根据权利要求1-4任一项所述的显示面板的封装方法，其中，所述显示基板上包括阵列排布的多个电致发光单元，所述薄膜封装无机层覆盖所述多个电致发光单元。
  6. 根据权利要求1-5任一项所述的显示面板的封装方法，还包括：
    在所述显示基板的薄膜封装区上形成至少一层薄膜封装有机层，以及采用一步图案化工艺形成多层所述薄膜封装无机层，沿垂直于所述显示基板的方向，所述薄膜封装有机层与所述薄膜封装无机层交替设置，
    其中，所述薄膜封装有机层包括第二开口图案，且所述第一开口图案在所述显示基板上的正投影与所述第二开口图案在所述显示基板上的正投影重合。
  7. 根据权利要求6所述的显示面板的封装方法，其中，采用喷墨打印技术直接形成包括所述第二开口图案的所述薄膜封装有机层。
  8. 根据权利要求1-7任一项所述的显示面板的封装方法，其中，所述显示基板包括绑定区，形成所述薄膜封装无机材料层包括：
    在所述绑定区上覆盖遮挡条；
    在覆盖所述遮挡条的所述显示基板上沉积所述薄膜封装无机材料层。
  9. 根据权利要求1-7任一项所述的显示面板的封装方法，其中，所述显示基板包括绑定区，形成所述薄膜封装无机材料层包括：
    在所述显示基板上设置遮挡层，其中所述遮挡层具有开口结构，所述遮挡层覆盖所述绑定区且所述开口结构暴露所述薄膜封装区；
    在设置所述遮挡层的所述显示基板上沉积所述薄膜封装无机材料层。
  10. 一种根据权利要求1-9任一项所述的显示面板的封装方法形成的显示面板。
  11. 根据权利要求10所述的显示面板，其中，所述显示面板为柔性显示面板。
  12. 一种显示装置，包括权利要求10或11所述的显示面板。
PCT/CN2018/101085 2017-12-06 2018-08-17 显示面板的封装方法、显示面板以及显示装置 WO2019109667A1 (zh)

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