WO2019205576A1 - 彩膜基板及制作方法、显示面板、显示装置及操作方法 - Google Patents

彩膜基板及制作方法、显示面板、显示装置及操作方法 Download PDF

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Publication number
WO2019205576A1
WO2019205576A1 PCT/CN2018/114836 CN2018114836W WO2019205576A1 WO 2019205576 A1 WO2019205576 A1 WO 2019205576A1 CN 2018114836 W CN2018114836 W CN 2018114836W WO 2019205576 A1 WO2019205576 A1 WO 2019205576A1
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Prior art keywords
color filter
substrate
image sensor
array
pixel unit
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PCT/CN2018/114836
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English (en)
French (fr)
Inventor
班圣光
曹占锋
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京东方科技集团股份有限公司
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Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US16/470,722 priority Critical patent/US11587965B2/en
Priority to EP18889943.9A priority patent/EP3786696A4/en
Publication of WO2019205576A1 publication Critical patent/WO2019205576A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13312—Circuits comprising photodetectors for purposes other than feedback
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
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    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
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    • G02F1/133519—Overcoatings
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133612—Electrical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/57—Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133357—Planarisation layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/50—Protective arrangements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
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    • G02F2201/501—Blocking layers, e.g. against migration of ions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Definitions

  • Embodiments of the present disclosure relate to a color filter substrate and a manufacturing method thereof, a display panel, a display device, and an operation method.
  • Intelligent electronic products such as mobile phones and tablet computers are usually additionally equipped with imaging elements for image information recording, and imaging elements are imaged using ambient light.
  • imaging elements are imaged using ambient light.
  • a photographing lens is provided in a non-display area, and the photographing lens is imaged using ambient light to realize a photographing function, but it is necessary to set a photographing lens dedicated to photographing in a non-display area.
  • At least one embodiment of the present disclosure provides a color filter substrate including: a substrate substrate, a color filter pixel array, and an image sensor.
  • the color filter pixel array is disposed on the base substrate and includes color filter pixel units arranged in an array; the image sensor is disposed on the color filter pixel array, corresponding to at least a portion of the color filter pixel units, and configured to Light passing through the color filter pixel unit can be received for imaging.
  • a color filter substrate provided by an embodiment of the present disclosure further includes a first protective layer covering at least the color filter pixel array, and the image sensor is disposed on the first protective layer.
  • the first protective layer is a single layer or a multilayer structure including silicon nitride, silicon oxide or silicon oxynitride.
  • a color filter substrate provided by an embodiment of the present disclosure further includes a second protective layer covering the color filter pixel array and an image sensor on the color filter pixel array.
  • the material of the second protective layer is a resin material.
  • a color filter substrate further includes a carrier substrate, the image sensor is disposed on the carrier substrate, and the carrier substrate is fixed on the substrate substrate.
  • the image sensor includes an imaging pixel unit, and the imaging pixel unit has a one-to-one correspondence with the color filter pixel unit.
  • the color filter pixel unit includes a red pixel unit, a green pixel unit, a blue pixel unit, a yellow pixel unit, a cyan pixel unit, and a magenta pixel unit.
  • At least one embodiment of the present disclosure further provides a display panel including any one of the color film substrates provided by the embodiments of the present disclosure.
  • a display panel further includes an array substrate, the array substrate and the color filter substrate pair; the image sensor is located between the substrate of the color filter substrate and the array substrate.
  • the array substrate includes a driving pixel array, the driving pixel array corresponding to a color filter pixel array of the color filter substrate, and the driving pixel array includes a display pixel array An open area and a non-display area between the open areas, an orthographic projection of the image sensor on the array of driving pixels being located in the non-display area.
  • the array substrate includes a thin film transistor located in the non-display area, and the image sensor and the thin film transistor at least partially overlap in a direction perpendicular to the array substrate.
  • One embodiment of the present disclosure further provides a display device including any of the display panels provided by the embodiments of the present disclosure.
  • At least one embodiment of the present disclosure also provides a method of operating a display device, the method comprising: performing a photographing operation using the image sensor during a non-display operation of the display panel.
  • the display panel further includes a backlight; and the operating method further includes: turning off the backlight during the photographing operation.
  • a further embodiment of the present disclosure further provides a method of fabricating a color filter substrate, the method comprising: providing a substrate; forming a color filter pixel array on the substrate, wherein the color filter pixel array comprises a color filter pixel unit arranged in an array; and an image sensor disposed on the color filter pixel array, wherein the image sensor corresponds to at least a portion of the color filter pixel unit and is configured to be receivable through the color filter pixel unit Light for imaging.
  • the disposing the image sensor on the color filter pixel array includes: preparing the image sensor by a semiconductor process on the color filter pixel array.
  • preparing the image sensor on the color filter pixel array includes: forming a first protective layer covering at least the color filter pixel array; The image sensor is prepared on the first protective layer by the semiconductor process.
  • the method for fabricating a color filter substrate according to an embodiment of the present disclosure further includes: forming a second protective layer covering the color filter pixel array and the image sensor.
  • the disposing the image sensor on the color filter pixel array includes: providing the image sensor disposed on a carrier substrate; and placing the carrier substrate Fixed on the color filter pixel array.
  • FIG. 1A is a schematic diagram of an imaging area of a color filter substrate according to an embodiment of the present disclosure
  • 1B is a schematic plan view of a color filter substrate according to an embodiment of the present disclosure.
  • 1C is a schematic block diagram of a CMOS image sensor
  • Figure 2 is a schematic cross-sectional view taken along line I-I' of Figure 1B;
  • FIG. 3 is a schematic plan view of another color film substrate according to an embodiment of the present disclosure.
  • Figure 4A is a schematic cross-sectional view along the line H-H' in Figure 3;
  • 4B is a color gamut comparison diagram of the color filter substrate shown in FIG. 2 and the color filter substrate shown in FIG. 4A;
  • Figure 5 is another schematic cross-sectional view taken along line I-I' of Figure 1B;
  • Figure 6 is another schematic cross-sectional view taken along the line H-H' in Figure 3;
  • FIG. 7 is a schematic diagram of a display panel according to an embodiment of the present disclosure.
  • FIG. 8A is a schematic cross-sectional view of a display panel according to an embodiment of the present disclosure.
  • FIG. 8B is a schematic cross-sectional view of another display panel according to an embodiment of the present disclosure.
  • FIG. 9 is a schematic plan view of an array substrate of a display panel according to an embodiment of the present disclosure.
  • 10A-10E are schematic diagrams showing a method of fabricating a color filter substrate according to an embodiment of the present disclosure
  • 10F-10H are schematic diagrams showing another method of fabricating a color filter substrate according to an embodiment of the present disclosure.
  • 11A-11E are schematic diagrams showing another method of fabricating a color filter substrate according to an embodiment of the present disclosure.
  • FIG. 12 is a flowchart of a method for fabricating a display panel according to an embodiment of the present disclosure
  • FIG. 13 is a schematic diagram of a display device according to an embodiment of the present disclosure.
  • a shooting-only shooting lens is usually set in a non-display area, and this setting needs to reserve a certain space in the non-display area, so the area of the non-display area is often increased.
  • the display device that completes the shooting function in the display area without setting the shooting lens in the non-display area can reduce the area of the non-display area, and the display device can be better in the environment of sufficient light and low light by design.
  • the imaging effect while having a simple structure, can enhance the user experience.
  • At least one embodiment of the present disclosure provides a color filter substrate including a substrate substrate, a color filter pixel array, and an image sensor.
  • the color filter pixel array is disposed on the substrate and includes color filter pixel units arranged in an array; the image sensor is disposed on the color filter pixel array, corresponding to at least a portion of the color filter pixel unit, and configured to receive the filtered color pixel unit Light is used for imaging.
  • FIG. 1A is a schematic view of an image forming area of a color filter substrate according to an embodiment of the present disclosure
  • FIG. 1B is a schematic plan view of a color filter substrate according to an embodiment of the present disclosure
  • the color filter substrate 10 includes a base substrate 1, a color filter pixel array 2, and an image sensor 3.
  • the base substrate 1 may be, for example, a glass substrate, a quartz substrate, or the like.
  • the base substrate 1 may be, for example, a flexible substrate. In this case, for example, the material of the base substrate 1 is polyimide.
  • the color filter pixel array 2 is located on the base substrate 1 and includes color filter pixel units (labeled 201, 202, and 203 in FIG. 2) arranged in an array, and the color filter pixel units can respectively transmit different colors (for example, here). For the red, green and blue primary colors).
  • the color filter pixel array 2 further includes a black matrix 6 between the respective color filter pixel units, which is capable of preventing crosstalk between light rays of adjacent color filter pixel units.
  • the image sensor 3 is disposed on the color filter pixel array and directly formed on the color filter substrate. The image sensor 3 corresponds to at least a part of the color filter pixel unit (the image sensor 3 is shown as corresponding to all the color filter pixel units).
  • Image sensors 3 are respectively disposed in each of the color filter pixel units of the imaging region as shown, and the image sensor 3 is configured to receive light of the filtered color pixel units for imaging.
  • the structure shown in FIG. 1B is merely an exemplary structure, and for example, a black matrix or the like may not be formed between the color filter pixel units.
  • an image sensor may be disposed in the imaging region 16 for imaging.
  • the imaging area 16 may correspond to a portion of the color filter pixel array 2 of the color filter substrate.
  • the imaging regions 16 may also be multiple and distributed across different regions of the color filter pixel array 2.
  • the image sensor 3 may also correspond to a portion of the color filter pixel cells, such as corresponding to a plurality of color filter pixel cells that are spaced apart.
  • imaging region 16 may also correspond to the entire color filter pixel array of the color filter substrate to increase the photosensitive area of the image sensor for better imaging results.
  • the image sensor 3 may be a CMOS image sensor or a CCD image sensor, which may be directly formed on a color filter substrate by a semiconductor process.
  • Figure 1C shows a functional block diagram of a CMOS image sensor.
  • the CMOS image sensor includes a pixel unit array and a driving circuit
  • the driving circuit includes, for example, a row driving circuit, a column driving circuit, and the like.
  • the column driving circuit may include an amplifying circuit and an analog-to-digital (A/D) conversion circuit. Wait.
  • the pixel unit array includes pixel units arranged in an array.
  • the pixel unit array is arranged in a square matrix in the X and Y directions, and each pixel unit in the square matrix has its X, Y direction (for example, the row direction).
  • the address on the column direction and can be selected in the two directions via the corresponding row line and the corresponding column line respectively; the output current/voltage signal is amplified and then sent to the A/D converter for modulus The conversion becomes a digital signal output.
  • the driver circuit can be fabricated on the same substrate as the pixel cell array, or separately provided and electrically connected to the pixel cell array.
  • the image sensor 3 performs imaging using ambient light.
  • Ambient light usually white light
  • the pixel unit receives monochromatic light passing through its corresponding color filter pixel unit, and performs imaging processing on the received light to obtain a data signal of one monochrome sub-pixel of the acquired image, and the data signal can be transmitted to the storage unit ( The file that holds and forms the entire image is not shown in the figure.
  • the image sensor 3 is capable of receiving and processing light of different colors of the filtered color pixel unit, thereby achieving color imaging.
  • the color film substrate provided by the embodiment of the present disclosure is applied to a display panel, and a display panel having a color photographing function of an in-cell type can be conveniently formed.
  • the structure of the display panel is simple and light.
  • the color filter pixel unit includes color filters of different colors to transmit different monochromatic lights, so that the image sensor 3 can perform color imaging using these different color lights.
  • the color filter pixel unit includes a red pixel unit 201, a green pixel unit 202, and a blue pixel unit 203.
  • the imaging pixel unit 301 corresponding to the image sensor of the red pixel unit 201 receives the red light passing through the red pixel unit 201 to obtain the red sub-pixel of the captured image
  • the imaging pixel unit 302 corresponding to the image sensor of the green pixel unit 202 receives the green through
  • the green light of the pixel unit 202 is obtained to obtain a green sub-pixel of the captured image
  • the imaging pixel unit 303 of the image sensor corresponding to the blue pixel unit 203 receives the blue light passing through the blue pixel unit 203 to obtain a blue sub-pixel of the captured image.
  • the imaging pixel units 301, 302, and 303 of the image sensor respectively sense the received red, green, and blue light, convert the optical signals into electrical signals, and the electrical signals are converted into image signals for output and storage. To achieve color imaging.
  • each imaging pixel unit of the image sensor may include an active pixel sensing circuit, which may be, for example, a 3T1C configuration with 3 transistors or a 4T1C configuration with 4 transistors, etc., for which reference may be made. technology.
  • each imaging pixel unit may include a photodiode and a switching transistor electrically connected to the photodiode, the photodiode may convert an optical signal irradiated thereto into an electrical signal, and the switching transistor may control whether to read the photoelectric An electrical signal obtained by collecting an optical signal on a diode.
  • the photodiode is a photodiode.
  • the specific structure of the imaging pixel unit of the image sensor can be referred to the conventional technology in the art, for example, it can be a suitable type (for example, CMOS type or CCD type, etc.), which is not limited by the embodiment of the present disclosure.
  • the photosensitive area of the image sensor can be increased, and the image sensor can collect richer light signals even when the ambient light is not sufficient (for example, dark light)
  • the color filter substrate 10 further includes a first protective layer 4 that covers at least the color filter pixel array 2.
  • the first protective layer 4 may also cover a portion of the base substrate 1 on which the color filter pixel array 2 is not formed.
  • the image sensor 3 is disposed on the first protective layer 4.
  • the first protective layer 4 can protect the color filter pixel array of the color filter substrate and can function as a flat layer.
  • the first protective layer 4 can prevent or reduce the color filter pixel array from being subjected to during the preparation of the image sensor. Adverse effects, such as contamination caused by impurity ions, foreign matter, etc.
  • the material of the first protective layer 4 may be a transparent inorganic material.
  • the first protective layer 4 is a single layer or a multilayer structure including silicon nitride, silicon oxide, or silicon oxynitride.
  • the first protective layer 4 is a laminated structure including silicon nitride and silicon oxide, and the like.
  • the color filter substrate 10 further includes a second protective layer 5 that covers the color filter pixel array 2 and the image sensor 3 disposed on the color filter pixel array 2.
  • the second protective layer 5 can prevent the image sensor from being damaged and contamination such as impurity ions, foreign matter, and the like.
  • the surface of the second protective layer 5 remote from the substrate 1 is a flat surface, so that the second protective layer 5 simultaneously functions as a flat layer, which is advantageous for forming a display device.
  • the second protective layer 5 may also be configured as a liquid crystal alignment layer.
  • the second protective layer 5 may be made of a material (for example, polyimide) for forming an alignment layer. With this configuration, it is not necessary to separately provide the liquid crystal alignment layer, and the structure of the liquid crystal display panel can be simplified to make it thinner and lighter.
  • the material of the second protective layer 5 may be an organic material such as a resin material.
  • the resin material may be, for example, polyimide (PI), epoxy resin, or polyacrylic resin.
  • PI polyimide
  • epoxy resin epoxy resin
  • polyacrylic resin polyacrylic resin
  • FIG. 3 is a schematic plan view of another color film substrate according to an embodiment of the present disclosure
  • FIG. 4A is a schematic cross-sectional view taken along line H-H' of FIG.
  • the embodiment shown in FIGS. 3 and 4A differs from the embodiment shown in FIG. 1B and FIG. 2 in that, in the color filter substrate 10 shown in FIGS. 3 and 4A, the color filter substrate shown in FIG. 4A includes Filtered pixel units of six colors of red (R), green (G), blue (B), yellow (Y), cyan (C), and magenta (M), and image sensors for processing light of these six colors .
  • R red
  • G green
  • B blue
  • Y yellow
  • C cyan
  • M magenta
  • the color filter pixel unit includes a red pixel unit 201, a green pixel unit 202, a blue pixel unit 203, a yellow pixel unit 204, a cyan pixel unit 205, and a magenta pixel unit 206.
  • the imaging pixel unit 301 corresponding to the image sensor of the red pixel unit 201 receives the red light passing through the red pixel unit 201
  • the imaging pixel unit 302 corresponding to the image sensor of the green pixel unit 202 receives the green light passing through the green pixel unit 202
  • the imaging pixel unit 303 of the image sensor of the blue pixel unit 203 receives the blue light passing through the blue pixel unit 203
  • the imaging pixel unit 304 of the image sensor corresponding to the yellow pixel unit 204 receives the yellow light passing through the yellow pixel unit 204, corresponding to the cyan
  • the imaging pixel unit 305 of the image sensor of the pixel unit 205 receives the cyan light passing through the cyan pixel unit 205
  • the imaging pixel unit 306 of the image sensor corresponding to the magenta pixel unit 206 receives the magenta light passing through the magenta pixel unit 206.
  • the imaging pixel units 301, 302, 303, 304, 305, and 306 of the image sensor respectively sense the received red light, green light, blue light, yellow light, cyan light, magenta light, and convert the optical signal into an electrical signal. These electrical signals are converted into image signal output and storage for color imaging.
  • FIG. 4B is a color gamut comparison diagram of the color filter substrate shown in FIG. 2 and the color filter substrate shown in FIG. 4A.
  • red (R) and green (G) are used as compared with the color gamut obtained by using the three colors of red (R), green (G), and blue (B) as the primary colors of the image recording.
  • the six colors of blue (B), yellow (Y), cyan (C), and magenta (M) have a larger color gamut range as the primary color of the image recording.
  • the color filter substrate shown in FIG. 4A is applied to a display panel or a display device, and a wider color gamut can be achieved. Moreover, the six colors are used as the primary colors of the image recording, and the captured images have better color balance, the image quality is more comfortable, and the images to be captured can be recorded more realistically.
  • Other features of the color filter substrate shown in FIG. 4A are the same as those shown in FIG. 2, please refer to the above description, and details are not described herein again.
  • Fig. 5 is another schematic cross-sectional view taken along line I-I' of Fig. 1B
  • Fig. 6 is another cross-sectional view taken along line H-H' of Fig. 3.
  • the color filter substrate 10 may further include a carrier substrate 7 disposed on or prepared on the carrier substrate 7, and the carrier substrate 7 is fixed on the color filter pixel array 2.
  • the carrier substrate 7 can be attached to the color filter pixel array 2 to fix the image sensor 3 on the base substrate 1.
  • the technical effects of this embodiment are similar to those of the embodiment described above with reference to FIG. 1B and FIG. 3, and are not described herein again.
  • the desired structure may be further formed on the basis of FIG. 1B and FIG. 3, for example, forming a common electrode layer, which may be formed on the surface of the second protective layer 5, for example.
  • the second protective layer cannot serve as an alignment layer, and the common electrode layer is, for example, a common electrode layer of a liquid crystal display panel for a vertical electric field mode.
  • At least one embodiment of the present disclosure further provides a display panel including any one of the color film substrates provided by the embodiments of the present disclosure.
  • the display panel provided by the embodiment of the present disclosure can realize the color image capturing function by using the image sensor of the display area, is light and thin, has a simple structure, and is easy to manufacture, and does not need to separately set a shooting lens.
  • FIG. 7 is a schematic diagram of a display panel according to an embodiment of the present disclosure.
  • the display panel 8 includes any of the color filter substrates 10 provided by the embodiments of the present disclosure.
  • Other structures of the display panel 8 are not limited in this embodiment.
  • display panel 8 can also include a backlight 14 that is configured to provide a light source for display.
  • the backlight may be a direct type light source as shown in FIG. 7.
  • the backlight may also be a side-entry light source.
  • the type of the backlight is not limited in the embodiment of the present disclosure.
  • the display panel may be a liquid crystal display panel.
  • the array substrate 11 and the color filter substrate 10 are opposite to each other, and the liquid crystal layer 9 is disposed between the array substrate 11 and the color filter substrate 10, and the array substrate 11 and the color filter substrate 10 are bonded by the sealant 15 at the periphery of the display panel 8 and The liquid crystal layer 9 is sealed.
  • FIG. 8A is a schematic cross-sectional view of a display panel according to an embodiment of the present disclosure, and the display panel includes the color filter substrate shown in FIG. 2 as an example.
  • the display panel 8 further includes an array substrate 11, and the array substrate 11 and the color filter substrate 10 are opposite to each other, and the periphery is bonded and sealed by a sealant (not shown in FIG. 8A).
  • the image sensor 3 is located between the base substrate 1 of the color filter substrate 10 and the array substrate 11, that is, the image sensor 3 is located in the casing of the display panel 8, and the display panel 8 is of an in-cell type, which can realize color shooting function. And make the display panel simple, light and easy to manufacture.
  • the display panel 8 may be a liquid crystal display panel.
  • the display panel 8 includes a liquid crystal layer 9 which is filled between the array substrate 11 and the color filter substrate 10.
  • the liquid crystal display panel further includes a backlight to provide a light source for display.
  • the display driving circuit of the display panel can be disposed, for example, on a flexible printed circuit board (FPC) and electrically connected to the gate lines, data lines, and the like in the display pixel array through the bonding region; accordingly, the driving circuit of the image sensor 3 is also Electrical connections may be made on a flexible printed circuit board (FPC) and through the bond area to the row lines, column lines, etc. in the array of imaging pixels.
  • FPC flexible printed circuit board
  • FIG. 8B is a schematic cross-sectional view of another display panel according to an embodiment of the present disclosure.
  • the display panel 8 may also be an organic light emitting diode (OLED) display device such as a white organic light emitting diode (W-OLED) display device.
  • OLED organic light emitting diode
  • the display panel 8 includes the light emitting device layer 901.
  • the organic light emitting device layer 901 includes a structure of a light emitting diode, a pixel defining layer, and the like, which are driven by a pixel driving circuit formed in the array substrate.
  • the organic light emitting diode includes a cathode, a light emitting layer, an anode, and the like.
  • FIG. 9 is a schematic plan view of an array substrate of a display panel according to an embodiment of the present disclosure.
  • the array substrate 11 of the display panel 8 includes a driving pixel array 12 that corresponds to the color filter pixel array 2 of the color filter substrate 10.
  • the driving pixel array 12 includes an open area 1201 for display and a non-display area 1202 between the open areas.
  • the plurality of open regions 1201 driving the pixel array respectively correspond to the color filter pixel units 201/202/203, that is, the orthographic projection of the color filter pixel units 201/202/203 on the driving pixel array 12 and the opening regions of the driving pixel array At least partially coincide.
  • the orthographic projection 30 of the image sensor on the driving pixel array is located in the non-display area 1202 of the driving pixel array.
  • the image sensor 3 does not affect the aperture ratio of the display panel 8, which is advantageous for improving the light effect of the display panel.
  • the array substrate 11 includes a thin film transistor 13 located in a non-display area, which may be a switching transistor (for example, a liquid crystal display device or an OLED display device) or a driving transistor (for example, an OLED display device) for displaying a pixel unit, an image sensor.
  • a switching transistor for example, a liquid crystal display device or an OLED display device
  • a driving transistor for example, an OLED display device
  • the thin film transistor 13 at least partially overlap in a direction perpendicular to the array substrate 11 to achieve an effect that the image sensor 3 does not affect the aperture ratio of the display panel 8, and these thin film transistors also provide a shading effect to the image sensor 3,
  • the image sensor 3 is small and is adversely affected by ambient light such as a backlight. As shown in FIG.
  • the orthographic projection of the image sensor on the driving pixel array 12 overlaps with a portion of the thin film transistor 13.
  • the orthographic projection of the image sensor on the driving pixel array 12 may also overlap the entire thin film transistor 13.
  • the display panel also includes a display driving circuit.
  • the display driving circuit includes signal lines or the like, for example, a plurality of display gate lines and display data lines connected to the driving pixel array 12 of the array substrate 11 to provide scanning signals and data signals for driving the driving pixel units of the pixel array 12 for display.
  • the display panel may further include a row driving circuit, a column driving circuit, and the like for the image sensor.
  • the row driving circuit of the image sensor includes a plurality of imaging gate lines connected to the display panel respectively connected to the image sensor
  • the column driving circuit of the image sensor includes a plurality of imaging data lines connected to the image sensor of the display panel, respectively, as an image
  • the imaging pixels of the sensor provide a scan signal and image signals are read from the imaging pixels of the image sensor for imaging.
  • the row driving circuit and the column driving circuit of the display driving circuit and the image sensor may refer to conventional designs in the art.
  • the row driving circuit and the column driving circuit may be integrated in the same image control circuit or chip, and the embodiment of the present disclosure is This is not limited.
  • At least one embodiment of the present disclosure further provides a method of fabricating a color filter substrate, the method comprising: providing a substrate; forming a color filter pixel array on the substrate; the color filter pixel array includes color filter pixels arranged in an array And arranging an image sensor on the color filter pixel array, the image sensor corresponding to the color filter pixel unit and configured to receive light of the filtered color pixel unit for imaging.
  • the method for fabricating the color filter substrate is exemplified by a color filter substrate including a color filter unit of three colors of red, green, and blue.
  • a color filter substrate including a color filter unit of three colors of red, green, and blue.
  • the embodiment of the present disclosure does not limit this.
  • FIGS. 10A-10E are schematic diagrams showing a method of fabricating a color filter substrate according to an embodiment of the present disclosure.
  • the base substrate 1 is provided, and for example, the substrate substrate 1 can be subjected to cleaning or the like.
  • the base substrate 1 may be, for example, a glass substrate, a quartz substrate, or the like.
  • the base substrate 1 may be, for example, a flexible substrate.
  • the material of the base substrate 1 is polyimide.
  • a color filter pixel array 12 is formed on the base substrate 1, and the color filter pixel array 12 includes color filter pixel units 201/202/203 arranged in an array.
  • the red pixel unit 201, the color filter pixel unit 202, and the blue pixel unit 203 may be sequentially formed by a color resin and by a three-time patterning process such as a photolithography process.
  • forming the color filter pixel array 12 further includes forming a black matrix 6 between the color filter pixel units on the base substrate 1.
  • the black matrix 6 may be formed using a black resin and by a patterning process such as a photolithography process before or after the color filter pixel unit 201/202/203 is formed.
  • the method of fabricating a color filter substrate further includes disposing an image sensor on the color filter pixel array, the image sensor corresponding to the color filter pixel unit and configured to receive light of the filtered color pixel unit for imaging.
  • arranging the image sensor on the color filter pixel array includes preparing the image sensor by a semiconductor process on the color filter pixel array.
  • preparing an image sensor on a color filter pixel array includes forming a first protective layer 4 covering an array of color filter pixels.
  • the first protective layer 4 is formed before the image sensor is formed.
  • the image sensor may be prepared on the first protective layer 4, so that the first protective layer 4 can prevent the color filter pixel array from being contaminated.
  • the material of the first protective layer 4 is a transparent material, for example, the transparent material includes at least one of silicon nitride, silicon oxide, or silicon oxynitride.
  • the first protective layer is formed as a single layer structure including silicon nitride, silicon oxide, or silicon oxynitride, or as a stacked structure including silicon nitride and silicon oxide, or the like.
  • the first protective layer 4 may be formed by chemical vapor deposition or magnetron sputtering. Thereafter, a planarization operation, such as chemical mechanical polishing, of the first protective layer 4 may be performed to obtain a flat surface, which facilitates subsequent formation of the image sensor.
  • preparing the image sensor on the color filter pixel array further includes: preparing an image sensor on the first protective layer 4 by a semiconductor process.
  • the specific semiconductor process can be referred to conventional techniques in the art and varied accordingly depending on the particular type of image sensor (eg, CMOS or CCD type, etc.).
  • the red pixel unit 201, the green pixel unit 202, and the blue pixel unit 203 correspond to the imaging pixel unit 301 of the image sensor, the imaging pixel unit 302 of the image sensor, and the imaging pixel unit 303 of the image sensor, respectively.
  • the imaging pixel unit 301 of the image sensor receives the red light passing through the red pixel unit 201
  • the imaging pixel unit 302 of the image sensor receives the green light passing through the green pixel unit 202
  • the imaging pixel unit 303 of the image sensor receives the blue light passing through the blue pixel unit 203.
  • the imaging pixel unit 301 of the image sensor, the imaging pixel unit 302 of the image sensor, and the imaging pixel unit 303 of the image sensor are capable of respectively sensitizing the received red, green, and blue light, and converting the optical signal into an electrical signal. It is converted into image signal output and storage for color imaging.
  • the method for fabricating a color filter substrate further includes: forming a second protective layer 5 covering the color filter pixel array and the image sensor.
  • the second protective layer 5 can protect the image sensor from damage and contamination.
  • the material of the second protective layer 5 may be an organic material such as a resin material.
  • the resin material may be, for example, polyimide (PI), epoxy resin, or polyacrylic resin.
  • the material of the second protective layer 5 is not limited to the above-mentioned type of transparent material, which is not limited by the embodiment of the present disclosure.
  • the second protective layer 5 may be formed by a coating method. Thereby, the color filter substrate 10 is formed.
  • providing the image sensor on the color filter pixel array may further include: providing the image sensor disposed on the carrier substrate; and fixing the carrier substrate to the color filter pixel array.
  • a carrier substrate 7 is provided, on which an image sensor is formed by a semiconductor process, and the image sensor includes an imaging pixel unit 301/302/303 of the image sensor.
  • forming an imaging pixel unit of each image sensor includes forming a photodiode and a switching transistor electrically connected to the photodiode, the photodiode can convert an optical signal irradiated thereto into an electrical signal, and the switching transistor can control whether to read the photoelectric An electrical signal obtained by collecting an optical signal on a diode.
  • forming the imaging pixel unit of each image sensor further includes forming an active pixel sensing circuit, which may be, for example, a 3T1C configuration with 3 transistors or a 4T1C configuration with 4 transistors, and the like.
  • an active pixel sensing circuit which may be, for example, a 3T1C configuration with 3 transistors or a 4T1C configuration with 4 transistors, and the like.
  • Specific techniques for forming an image sensor can be referred to related art.
  • the order of the steps in the embodiment of the present disclosure is not limited.
  • the carrier substrate 7 is fixed on the color filter pixel array as shown in FIG. 10B, for example, the carrier substrate 7 is pasted on the color filter pixel array, so that the red pixel unit 201, the green pixel unit 202, and the blue
  • the pixel units 203 correspond to the imaging pixel units 301, 302, 303 of the image sensor, respectively.
  • a second protective layer 5 covering the color filter pixel array and the image sensor is formed, thereby forming the color filter substrate 10.
  • the method of forming the second protective layer 5 is the same as that shown in FIG. 10E, please refer to the previous description.
  • the method for fabricating the color filter substrate described above is exemplified by a color filter substrate including three types of color filter cells of red, green, and blue, but the same is applicable to a color filter substrate including a plurality of other color filter pixel units.
  • a color filter substrate including a plurality of other color filter pixel units In the method of fabricating the color filter substrate provided by the embodiment of the present disclosure, different technical features may be combined.
  • FIG. 11A-11E is a schematic diagram of a method for fabricating another color film substrate according to an embodiment of the present disclosure.
  • a base substrate 1 is provided, which is the same as that shown in Fig. 10A.
  • the process differs from the process shown in FIG. 10B in that the formed color filter pixel array includes six color filter pixel units, respectively: red pixel unit 201, green pixel unit 202, and blue.
  • Other features are the same as those shown in FIG. 10B, please refer to the previous description.
  • the first protective layer 4 is formed, which is the same as that shown in Fig. 10C.
  • red pixel unit 201 green pixel unit 202, blue pixel unit 203, yellow pixel unit 204, cyan pixel unit 205, and magenta pixel unit are respectively formed.
  • a second protective layer 5 covering the color filter pixel array and the image sensor is formed, thereby forming the color filter substrate 10.
  • the method of forming the second protective layer 5 is the same as that shown in Fig. 10E, please refer to the previous description.
  • FIG. 12 is a flowchart of a method for fabricating a display panel according to an embodiment of the present disclosure. As shown in FIG. 12, the method includes: providing an array substrate; providing a color filter substrate obtained by any one of the manufacturing methods provided by the embodiments of the present disclosure; aligning the array substrate and the color filter substrate, and positioning the image sensor on the array substrate Between the substrate and the substrate of the color filter substrate.
  • the display panel formed by the method is of the In-cell type, and the color photographing function can be realized, and the manufacturing method of the display panel is simple.
  • the display panel may be a liquid crystal display panel, and the method for fabricating the display panel further comprises injecting liquid crystal between the array substrate and the color filter substrate to form a liquid crystal layer.
  • the display panel may also be an OLED display device, such as a white light organic light emitting diode (W-OLED) display device.
  • the method for fabricating the display panel further includes forming a pixel defining layer and an organic light emitting diode on the array substrate. Wait.
  • At least one embodiment of the present disclosure further provides a display device including any display panel provided by an embodiment of the present disclosure.
  • FIG. 13 is a schematic diagram of a display device according to an embodiment of the present disclosure.
  • the display device 20 includes any of the display panels 8 provided by the embodiments of the present disclosure.
  • the display device may be a liquid crystal display device, a white organic light emitting diode display device, or the like.
  • the display device can be implemented as a product, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, an electronic advertisement screen, or the like.
  • FIG. 13 is a schematic diagram of a display device including any of the display panels provided by the embodiments of the present disclosure. Other structures of the display device are not shown, and those skilled in the art may refer to the conventional technology, which is not limited in this embodiment.
  • the display device provided by the embodiment of the present disclosure can realize a color image capturing function in a display area, is light and thin, has a simple structure, and is easy to manufacture, and does not need to separately set a shooting lens.
  • At least one embodiment of the present disclosure further provides a method of operating a display device, which is a display device according to an embodiment of the present disclosure, including an image sensor disposed on a color filter substrate, the method including: non-display operation on the display device During the shooting, the image sensor is used to perform the shooting operation.
  • the display device also includes a controller.
  • the controller can control the operation of the image sensor while, for example, the controller can also control the display operation by controlling the display drive circuit to realize that the display function is interrupted when the shooting operation is performed, and the display function is resumed when the shooting operation is ended.
  • the controller is, for example, a central processing unit (CPU), a digital signal processor (DSP), a programmable logic controller (PLC), or the like.
  • the display device in a case where the display device includes a backlight, for example, the display device is a liquid crystal display panel.
  • the method of operation further includes turning off the backlight during the shooting operation.
  • the controller can be used to control the backlight to be turned off and on, so that when the shooting operation is performed, the backlight is turned off, the backlight is prevented from affecting the imaging, the image sensor is imaged by the ambient light, and the shooting is completed; after the shooting is completed, the backlight is turned on. Restore display function.

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Abstract

一种彩膜基板及其制作方法、显示面板、显示装置及其操作方法，彩膜基板包括：衬底基板(1)、滤色像素阵列(2)和图像传感器(3)。滤色像素阵列(2)位于衬底基板(1)上且包括呈阵列排布的滤色像素单元(201/202/203/204/205/206)；图像传感器(3)设置于滤色像素阵列(2)上，与滤色像素单元(201/202/203/204/205/206)对应且配置为可接收经过滤色像素单元(201/202/203/204/205/206)的光以用于成像。彩膜基板能够实现彩色成像，利用彩膜基板的显示面板能够实现彩色拍摄功能且轻薄。

Description

彩膜基板及制作方法、显示面板、显示装置及操作方法
本申请要求于2018年4月26日递交的中国专利申请第201810388269.X号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。
技术领域
本公开的实施例涉及一种彩膜基板及制作方法、显示面板、显示装置及操作方法。
背景技术
手机、平板电脑等智能电子产品通常另外配有成像元件进行图像信息记录，成像元件利用环境光进行成像。例如，在具有显示功能的电子产品中，在非显示区内设置拍摄镜头，拍摄镜头利用环境光进行成像，从而实现拍摄功能，但需要在非显示区设置拍摄专用的拍摄镜头。
发明内容
本公开至少一实施例提供一种彩膜基板，该彩膜基板包括：衬底基板、滤色像素阵列和图像传感器。所述滤色像素阵列位于所述衬底基板上且包括呈阵列排布的滤色像素单元；图像传感器设置于所述滤色像素阵列上，与至少部分所述滤色像素单元对应且配置为可接收经过所述滤色像素单元的光以用于成像。
例如，本公开一实施例提供的彩膜基板还包括第一保护层，第一保护层至少覆盖所述滤色像素阵列，所述图像传感器设置于所述第一保护层上。
例如，本公开一实施例提供的彩膜基板中，所述第一保护层为包括氮化硅、氧化硅或氮氧化硅的单层或多层结构。
例如，本公开一实施例提供的彩膜基板还包括第二保护层，覆盖所述滤色像素阵列以及在所述滤色像素阵列上的图像传感器。
例如，本公开一实施例提供的彩膜基板中，所述第二保护层的材料为树脂材料。
例如，本公开一实施例提供的彩膜基板还包括承载基板，所述图像传感器设置于所述承载基板上，所述承载基板固定于所述衬底基板上。
例如，本公开一实施例提供的彩膜基板中，述图像传感器包括成像像素单元，所述成像像素单元与所述滤色像素单元一一对应。
例如，本公开一实施例提供的彩膜基板中，所述滤色像素单元包括红色像素单元、绿色像素单元、蓝色像素单元、黄色像素单元、青色像素单元和品红色像素单元。
本公开至少一实施例还提供一种显示面板，该显示面板包括本公开实施例提供的任意一种彩膜基板。
例如，本公开一实施例提供的显示面板还包括阵列基板，阵列基板与所述彩膜基板对盒；所述图像传感器位于所述彩膜基板的衬底基板和所述阵列基板之间。
例如，本公开一实施例提供的显示面板中，所述阵列基板包括驱动像素阵列，所述驱动像素阵列对应于所述彩膜基板的滤色像素阵列；所述驱动像素阵列包括用于显示的开口区和位于所述开口区之间的非显示区，所述图像传感器在所述驱动像素阵列上的正投影位于所述非显示区中。
例如，本公开一实施例提供的显示面板中，所述阵列基板包括位于所述非显示区的薄膜晶体管，所述图像传感器与所述薄膜晶体管在垂直于所述阵列基板的方向上至少部分重叠。
本公开少一实施例还提供一种显示装置，该显示装置包括本公开实施例提供的任意一种显示面板。
本公开至少一实施例还提供一种显示装置的操作方法，该方法包括：在所述显示面板的非显示操作期间，使用所述图像传感器执行拍摄操作。
例如，本公开一实施例提供的显示装置的操作方法中，所述显示面板还包括背光源；所述操作方法还包括：在所述拍摄操作期间，关闭所述背光源。
本公开少一实施例还提供一种彩膜基板的制作方法，该制作方法包括：提供衬底基板；在所述衬底基板上形成滤色像素阵列，其中，所述滤色像素阵列包括呈阵列排布的滤色像素单元；以及在所述滤色像素阵列上设置图像传感器，其中，所述图像传感器与至少部分所述滤色像素单元对应且配置为可接收经过所述滤色像素单元的光以用于成像。
例如，本公开一实施例提供的彩膜基板的制作方法中，在所述滤色像素 阵列上设置所述图像传感器包括：在所述滤色像素阵列上通过半导体工艺制备所述图像传感器。
例如，本公开一实施例提供的彩膜基板的制作方法中，在所述滤色像素阵列上制备所述图像传感器包括：形成至少覆盖所述滤色像素阵列的第一保护层；在所述第一保护层上通过所述半导体工艺制备所述图像传感器。
例如，本公开一实施例提供的彩膜基板的制作方法还包括：形成覆盖所述滤色像素阵列和所述图像传感器的第二保护层。
例如，本公开一实施例提供的彩膜基板的制作方法中，在所述滤色像素阵列上设置所述图像传感器包括：提供设置在承载基板上的所述图像传感器；以及将所述承载基板固定于所述滤色像素阵列上。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例，而非对本公开的限制。
图1A为本公开一实施例提供的一种彩膜基板的成像区域示意图；
图1B为本公开一实施例提供的一种彩膜基板的平面示意图；
图1C为一种CMOS图像传感器的原理框图；
图2为沿图1B中的I-I’线的一种剖面示意图；
图3为本公开一实施例提供的另一种彩膜基板的平面示意图；
图4A为沿图3中的H-H’线的一种剖面示意图；
图4B为图2所示的彩膜基板和图4A所示的彩膜基板的色域对比图；
图5为沿图1B中的I-I’线的另一种剖面示意图；
图6为沿图3中的H-H’线的另一种剖面示意图；
图7为本公开一实施例提供的一种显示面板示意图；
图8A为本公开一实施例提供的一种显示面板的剖面示意图；
图8B为本公开一实施例提供的另一种显示面板的剖面示意图；
图9为本公开一实施例提供的显示面板的阵列基板的平面示意图；
图10A-10E为本公开一实施例提供的一种彩膜基板的制作方法示意图；
图10F-10H为本公开一实施例提供的另一种彩膜基板的制作方法示意图；
图11A-11E为本公开一实施例提供的另一种彩膜基板的制作方法示意图；
图12为本公开一实施例提供的一种显示面板的制作方法的流程图；
图13为本公开一实施例提供的一种显示装置示意图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其它实施例，都属于本公开保护的范围。
除非另作定义，此处使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开专利申请说明书以及权利要求书中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“内”、“外”、“上”、“下”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
本公开所使用的附图并不是严格按实际比例绘制，各个实施例中彩色像素单元和阵列像素单元的个数也不是限定为图中所示的数量，各个结构的具体地尺寸和数量可根据实际需要进行确定。本公开中所描述的附图仅是结构示意图。
在一些具有显示功能的电子产品中，通常在非显示区设置拍摄专用的拍摄镜头，该设置需要在非显示区预留一定的空间，因此往往会增大非显示区的面积。在显示区域内完成拍摄功能而无需在非显示区设置拍摄镜头的显示装置可以减小非显示区的面积，通过设计，该显示装置能够在光线充足和光线较弱的环境下均获得较好的成像效果，同时又具有简单的结构，可以提升用户体验。
本公开至少一实施例提供一种彩膜基板，该彩膜基板包括衬底基板、滤色像素阵列和图像传感器。滤色像素阵列位于衬底基板上且包括呈阵列排布 的滤色像素单元；图像传感器设置于滤色像素阵列上，与至少部分滤色像素单元对应且配置为可接收经过滤色像素单元的光以用于成像。
示范性地，图1A为本公开一实施例提供的一种彩膜基板的成像区域示意图，图1B为本公开一实施例提供的一种彩膜基板的平面示意图，图2为沿图1B中的I-I’线的一种剖面示意图。如图1B和图2所示，彩膜基板10包括衬底基板1、滤色像素阵列2和图像传感器3。衬底基板1例如可以为玻璃基板、石英基板等。衬底基板1例如也可以为柔性基板，此时，例如，衬底基板1的材料为聚酰亚胺。滤色像素阵列2位于衬底基板1上且包括呈阵列排布的滤色像素单元(图2中标号为201、202和203)，这些滤色像素单元可分别透过不同的颜色(例如这里为红绿蓝三原色)。滤色像素阵列2还包括位于各个滤色像素单元之间的黑矩阵6，黑矩阵6能够防止相邻的滤色像素单元的光线之间的串扰。图像传感器3设置于滤色像素阵列上，可直接形成在该彩膜基板上，图像传感器3与至少部分滤色像素单元对应(图中示出为图像传感器3与全部滤色像素单元对应)，如图所示图像传感器3分别设置于成像区域的每个滤色像素单元之中，且图像传感器3配置为可接收经过滤色像素单元的光以用于成像。图1B所示的结构仅仅一种示例性结构，例如，滤色像素单元之间也可以不形成黑矩阵等。
如图1A所示，在彩膜基板中，图像传感器可以设置于成像区域16以用于成像。例如，在图1A所示的示例中，成像区域16可以对应于彩膜基板的滤色像素阵列2的一部分区域。例如，在一些示例中，成像区域16也可以为多个，并分布于滤色像素阵列2的不同区域。例如，在一些实例中，在每个成像区域16中，图像传感器3也可以与部分滤色像素单元对应，例如与间隔设置的多个滤色像素单元对应。例如，在一些示例中，成像区域16也可以对应于彩膜基板的整个滤色像素阵列，以增大图像传感器的感光面积，实现更好的成像效果。
例如，图像传感器3可以是CMOS图像传感器或CCD图像传感器，可通过半导体工艺直接形成在彩膜基板上。图1C示出了一种CMOS图像传感器的原理框图。如图1C所示，该CMOS图像传感器包括像素单元阵列和驱动电路，该驱动电路例如包括行驱动电路、列驱动电路等，例如列驱动电路可以包括放大电路、模数(A/D)转换电路等。像素单元阵列包括排成阵列的像素单元，例如图中所示，像素单元阵列按X和Y方向排列成方阵，方 阵中的每一个像素单元都有它在X、Y方向(例如行方向和列方向)上的地址，并可分别经由相应的行线和相应的列线在这两个方向上被选择；输出的电流/电压信号被放大之后，输送到A/D转换器进行模数转换变成数字信号输出。该驱动电路可以与像素单元阵列制备在同一个衬底上，或者单独提供并电连接到像素单元阵列。
如图2所示，图像传感器3利用环境光进行成像。环境光(通常为白光)入射至滤色像素单元中，经过滤色像素单元的滤色作用后以相应的单色光(例如红光、绿光或蓝光)射出，图像传感器3的每个成像像素单元接收经过其对应的滤色像素单元的单色光，对所接收到的光进行成像处理以得到采集的图像的一个单色子像素的数据信号，该数据信号可以被传输至存储单元(图中未示出)保存并形成整个图像的文件。由此，图像传感器3能够接收和处理经过滤色像素单元的不同颜色的光，从而实现彩色成像。
将本公开实施例提供的彩膜基板应用于显示面板中，能够方便地形成内置(In-cell)型的具有彩色拍摄功能的显示面板，显示面板的结构简单、轻薄。
例如，滤色像素单元包括颜色不同的滤色片以透射出不同的单色光，从而图像传感器3能够利用这些不同的色光进行彩色成像。例如，滤色像素单元包括红色像素单元201、绿色像素单元202和蓝色像素单元203。对应于红色像素单元201的图像传感器的成像像素单元301接收经过红色像素单元201的红光以得到被拍摄图像的红色子像素，对应于绿色像素单元202的图像传感器的成像像素单元302接收经过绿色像素单元202的绿光以得到被拍摄图像的绿色子像素，对应于蓝色像素单元203的图像传感器的成像像素单元303接收经过蓝色像素单元203的蓝光以得到被拍摄图像的蓝色子像素。如图所示，图像传感器的成像像素单元301、302和303分别对接收到的红光、绿光和蓝光进行感光，将光信号转换成电信号，这些电信号被转换为图像信号输出、存储，实现彩色成像。
如上所述，图像传感器包括成像像素单元，成像像素单元可以与滤色像素单元一一对应。例如，图像传感器的每个成像像素单元可以包括有源像素传感电路，有源像素传感电路例如可以为具有3个晶体管的3T1C构造或者具有4个晶体管的4T1C构造等，对此可以参考相关技术。例如，在一个示例中，每个成像像素单元可以包括光电二极管和与光电二极管电连接的开关 晶体管，光电二极管可以将照射到其上的光信号转换为电信号，开关晶体管可以控制是否读取光电二极管上采集光信号所得到的电信号。例如，该光电二极管为光敏二极管。图像传感器的成像像素单元具体结构可以参考本领域常规技术，例如可以为适当类型(例如CMOS型或CCD型等)，本公开实施例对此不作限定。将图像传感器的成像像素单元与滤色像素单元一一对应，能够增大图像传感器的感光面积，图像传感器能够收集更丰富的光信号，即使当环境光不是很充足的情况下(例如进行暗光拍摄时)，也能够取得较好的成像效果，避免出现拍摄虚化、噪点增多、细节不足等问题，即得到较好的拍摄效果。
例如，在一个示例中，彩膜基板10还包括第一保护层4，第一保护层4至少覆盖滤色像素阵列2。第一保护层4也可以覆盖未形成有滤色像素阵列2的衬底基板1的部分。图像传感器3设置于第一保护层4上。第一保护层4能够保护彩膜基板的滤色像素阵列，而且可以起到平坦层的作用。例如，在制作彩膜基板10的过程中，当在滤色像素阵列2上制备图像传感器3时，在图像传感器的制备过程中，第一保护层4可以防止或减小滤色像素阵列受到的不利影响，例如杂质离子、异物等带来的污染等。
例如，第一保护层4的材料可以为透明的无机材料。例如，第一保护层4为包括氮化硅、氧化硅或氮氧化硅的单层或多层结构。例如，第一保护层4为包括氮化硅和氧化硅的叠层结构等。
例如，在一个示例中，彩膜基板10还包括第二保护层5，第二保护层5覆盖滤色像素阵列2以及设置在滤色像素阵列2上的图像传感器3。第二保护层5能够防止图像传感器受到损伤及例如杂质离子、异物等带来的污染等。例如，第二保护层5的远离衬底基板1的表面为平坦表面，以使第二保护层5同时起到平坦层的作用，有利于形成显示器件。另外，当彩膜基板10应用于液晶显示面板时，第二保护层5还可以配置为液晶取向层，例如，第二保护层5可以由用于形成取向层的材料(例如聚酰亚胺)形成，如此，无需单独设置液晶取向层，能够简化液晶显示面板的结构，使其更轻薄。
例如，第二保护层5的材料可以为有机材料，例如树脂材料。该树脂材料例如可以是聚酰亚胺(PI)、环氧树脂或聚丙烯酸树脂等。当然，第二保护层5的材料不限于是上述种类，本公开实施例对此不作限定。
例如，图3为本公开一实施例提供的另一种彩膜基板的平面示意图，图 4A为沿图3中的H-H’线的一种剖面示意图。图3和图4A所示的实施例与上图1B和图2所示的实施例的区别在于，在图3和图4A所示的彩膜基板10中，图4A所示的彩膜基板包括红色(R)、绿色(G)、蓝色(B)、黄色(Y)、青色(C)和品红色(M)六种颜色的滤光像素单元以及处理这六种颜色的光的图像传感器。滤色像素单元包括红色像素单元201、绿色像素单元202、蓝色像素单元203、黄色像素单元204、青色像素单元205和品红色像素单元206。对应于红色像素单元201的图像传感器的成像像素单元301接收经过红色像素单元201的红光，对应于绿色像素单元202的图像传感器的成像像素单元302接收经过绿色像素单元202的绿光，对应于蓝色像素单元203的图像传感器的成像像素单元303接收经过蓝色像素单元203的蓝光，对应于黄色像素单元204的图像传感器的成像像素单元304接收经过黄色像素单元204的黄光，对应于青色像素单元205的图像传感器的成像像素单元305接收经过青色像素单元205的青光，对应于品红色像素单元206的图像传感器的成像像素单元306接收经过品红色像素单元206的品红色光。图像传感器的成像像素单元301、302、303、304、305和306分别对接收到的红色光、绿色光、蓝色光、黄色光、青色光、品红色光进行感光，将光信号转换成电信号，这些电信号被转换为图像信号输出、存储，实现彩色成像。
图4B为图2所示的彩膜基板和图4A所示的彩膜基板的色域对比图。由图4B可看出，与采用红色(R)、绿色(G)、蓝色(B)三种颜色作为图像记录的基色所获得的色域相比，采用红色(R)、绿色(G)、蓝色(B)、黄色(Y)、青色(C)和品红色(M)六种颜色作为图像记录的基色所获得的色域范围更大。
与图2所示的彩膜基板相比，图4A所示的彩膜基板应用于显示面板或显示装置中，能够使达到更广的色域。并且，该六种颜色作为图像记录的基色，拍摄所得的图像的色彩均衡性更好，画质给人的感觉更加舒适，能够更加真实地对所要拍摄的图像进行记录。图4A所示的彩膜基板的其他特征均与图2所示的相同，请参考上述描述，这里不再赘述。
图5为沿图1B中的I-I’线的另一种剖面示意图，图6为沿图3中的H-H’线的另一种剖面示意图。在图5和图6所示的实施例中，彩膜基板10还可以包括承载基板7，图像传感器3设置于或制备于承载基板7上，承载基板7固定于滤色像素阵列2上。例如，承载基板7可以粘贴于滤色像素阵列2 上，从而将图像传感器3固定在衬底基板1上。该实施例的技术效果与上述参照图1B以及图3所述的实施例相似，这里不再赘述。
在公开的其他实施例中，可以在图1B和图3的基础上进一步形成其所需的结构，例如形成公共电极层，该公共电极层例如可以形成在第二保护层5的表面(此时第二保护层不能兼做配向层)，该公共电极层例如是用于垂直电场模式的液晶显示面板的公共电极层。
本公开至少一实施例还提供一种显示面板，该显示面板包括本公开实施例提供的任意一种彩膜基板。本公开实施例提供的显示面板能够运用显示区的图像传感器实现彩色图像拍摄功能且轻薄，结构简单，易于制作，无需另外设置拍摄镜头。
示范性地，图7为本公开一实施例提供的一种显示面板示意图。如图7所示，显示面板8包括本公开实施例提供的任意一种彩膜基板10。对于显示面板8的其他结构本公开实施例不作限定。例如，在图7所示的示例中，显示面板8还可以包括背光源14，背光源14配置为为显示提供光源。例如，背光源可以为图7所示的直下式光源，当然，在本公开的其他实施例中，背光源也可以为侧入式光源。本公开实施例对背光源的类型不作限定。这种需要背光源的情况下，例如，显示面板可以为液晶显示面板。阵列基板11与彩膜基板10对盒，在阵列基板11与彩膜基板10之间设置有液晶层9，在显示面板8的周边通过封框胶15将阵列基板11与彩膜基板10结合以及对液晶层9进行密封。
图8A为本公开一实施例提供的一种显示面板的剖面示意图，以显示面板包括图2所示的彩膜基板为例。如图8A所示，显示面板8还包括阵列基板11，阵列基板11与彩膜基板10对盒，周边通过封框胶(图8A未示出)结合、密封。图像传感器3位于彩膜基板10的衬底基板1和阵列基板11之间，即图像传感器3位于显示面板8的盒内，显示面板8为内置(In-cell)型，不但能够实现彩色拍摄功能，并且使得显示面板结构简单、轻薄，易于制作。例如，显示面板8可以为液晶显示面板，此时，显示面板8包括液晶层9，其填充在阵列基板11与彩膜基板10之间。例如，该液晶显示面板还包括背光源，以为显示提供光源。该显示面板的显示驱动电路例如可以设置在柔性印刷电路板(FPC)上并通过绑定区与显示像素阵列中的栅线、数据线等实现电连接；相应地，图像传感器3的驱动电路也可以设置在柔性印刷 电路板(FPC)上并通过绑定区与成像像素阵列中的行线、列线等实现电连接。本公开的实施例对于驱动电路的提供方式不做限制。
图8B为本公开一实施例提供的另一种显示面板的剖面示意图。如图8B所示，例如，显示面板8还可以是有机发光二极管(OLED)显示装置，例如白光有机发光二极管(W-OLED)显示装置。此时，显示面板8包括发光器件层901。例如，有机发光器件层901包括发光二极管、像素界定层等结构，这些有机发光二极管由形成在阵列基板中的像素驱动电路驱动。有机发光二极管包括阴极、发光层和阳极等。
图9为本公开一实施例提供的显示面板的阵列基板的平面示意图。如图9所示，例如，显示面板8的阵列基板11包括驱动像素阵列12，驱动像素阵列12对应于彩膜基板10的滤色像素阵列2。例如，驱动像素阵列12包括用于显示的开口区1201和位于开口区之间的非显示区1202。驱动像素阵列的多个开口区1201分别与滤色像素单元201/202/203相对应，即滤色像素单元201/202/203在驱动像素阵列12上的正投影与驱动像素阵列的开口区的至少部分重合。图像传感器在驱动像素阵列上的正投影30位于驱动像素阵列的非显示区1202中，如此，图像传感器3不会影响显示面板8的开口率，有利于提高显示面板的光效。
例如，阵列基板11包括位于非显示区的薄膜晶体管13，该薄膜晶体管可以为用于显示像素单元的开关晶体管(例如液晶显示装置或OLED显示装置)或驱动晶体管(例如OLED显示装置)，图像传感器3与薄膜晶体管13在垂直于阵列基板11的方向上至少部分重叠，以达到图像传感器3不会影响显示面板8的开口率的效果，而且这些薄膜晶体管也对图像传感器3提供了遮光效果，减小了图像传感器3受到环境光(例如背光)的不利影响。如图9所示，例如，图像传感器在驱动像素阵列12上的正投影与薄膜晶体管13的一部分重叠。当然，在本公开的其他实施例中，图像传感器在驱动像素阵列12上的正投影也可以与整个薄膜晶体管13重叠。
例如，显示面板还包括显示驱动电路。例如，显示驱动电路包括信号线等，例如连接到阵列基板11的驱动像素阵列12的多条显示栅线和显示数据线，以为驱动像素阵列12的驱动像素单元提供扫描信号和数据信号以进行显示。显示面板还可以包括用于图像传感器的行驱动电路、列驱动电路等。例如，图像传感器的行驱动电路包括分别连接到显示面板的连接图像传感器 的多条成像栅线，图像传感器的列驱动电路包括分别连接到显示面板的连接图像传感器的多条成像数据线，以为图像传感器的成像像素提供扫描信号，以及从图像传感器的成像像素读取图像信号，以进行成像。显示驱动电路和图像传感器的行驱动电路、列驱动电路均可参考本领域常规设计，例如该行驱动电路和列驱动电路等可以集成在同一个图像控制电路或芯片之中，本公开实施例对此不作限定。
本公开至少一实施例还提供一种彩膜基板的制作方法，该方法包括：提供衬底基板；在衬底基板上形成滤色像素阵列，滤色像素阵列包括呈阵列排布的滤色像素单元；以及在滤色像素阵列上设置图像传感器，图像传感器与滤色像素单元对应且配置为可接收经过滤色像素单元的光以用于成像。
下面以彩膜基板包括红、绿、蓝三种颜色的滤色像素单元为例来说明彩膜基板的制作方法，本公开的实施例对此不作限制。
图10A-10E为本公开一实施例提供的一种彩膜基板的制作方法示意图。如图10A所示，首先，提供衬底基板1，例如可以对衬底基板1进行清洗等处理。衬底基板1例如可以为玻璃基板、石英基板等。衬底基板1例如也可以为柔性基板，此时，例如，衬底基板1的材料为聚酰亚胺。
如图10B所示，在衬底基板1上形成滤色像素阵列12，滤色像素阵列12包括呈阵列排布的滤色像素单元201/202/203。例如，可以采用彩色树脂并通过三次构图工艺例如光刻工艺依次形成红色像素单元201、滤色像素单元202和蓝色像素单元203。例如，形成滤色像素阵列12还包括在衬底基板1上形成位于滤色像素单元之间的黑矩阵6。例如可以在形成滤色像素单元201/202/203之前或之后，采用黑色树脂并通过构图工艺例如光刻工艺形成黑矩阵6。
彩膜基板的制作方法还包括在滤色像素阵列上设置图像传感器，图像传感器与滤色像素单元对应且配置为可接收经过滤色像素单元的光以用于成像。例如，在滤色像素阵列上设置图像传感器包括：在滤色像素阵列上通过半导体工艺制备所述图像传感器。
如图10C所示，在滤色像素阵列上制备图像传感器包括：形成覆盖滤色像素阵列的第一保护层4。在形成图像传感器之前形成第一保护层4，在后续的图像传感器的制备过程中，可以在第一保护层4上制备图像传感器，从而第一保护层4可以防止滤色像素阵列受到污染。例如，第一保护层4的材 料为透明材料，例如该透明材料包括氮化硅、氧化硅或氮氧化硅中的至少之一。例如，第一保护层形成为包括氮化硅、氧化硅或氮氧化硅的单层结构，或者形成为包括氮化硅和氧化硅的叠层结构等。例如，可以采用化学气相沉积法或磁控溅射法形成第一保护层4。之后，可以进行对第一保护层4进行平坦化操作，例如化学机械抛光，以得到平坦表面，有利于后续形成图像传感器。
如图10D所示，在滤色像素阵列上制备图像传感器还包括：在第一保护层4上通过半导体工艺制备图像传感器。具体的半导体工艺过程可参考本领域常规技术，且根据图像传感器的具体类型(例如CMOS型或CCD型等)进行相应地变化。红色像素单元201、绿色像素单元202和蓝色像素单元203分别对应于图像传感器的成像像素单元301、图像传感器的成像像素单元302和图像传感器的成像像素单元303。图像传感器的成像像素单元301接收经过红色像素单元201的红光，图像传感器的成像像素单元302接收经过绿色像素单元202的绿光，图像传感器的成像像素单元303接收经过蓝色像素单元203的蓝光。图像传感器的成像像素单元301、图像传感器的成像像素单元302和图像传感器的成像像素单元303能够分别对接收到的红光、绿光和蓝光进行感光，将光信号转换成电信号，这些电信号被转换为图像信号输出、存储，实现彩色成像。
图10E所示，彩膜基板的制作方法还包括：形成覆盖滤色像素阵列和图像传感器的第二保护层5。第二保护层5能够保护图像传感器受到损伤及污染。例如，第二保护层5的材料可以为有机材料，例如树脂材料。该树脂材料例如可以是聚酰亚胺(PI)、环氧树脂或聚丙烯酸树脂等。当然，第二保护层5的材料可以是不限于上述种类的透明材料，本公开实施例对此不作限定。例如，可以采用涂覆的方法形成第二保护层5。由此，形成彩膜基板10。
图10F-10H为本公开一实施例提供的另一种彩膜基板的制作方法示意图。例如，在滤色像素阵列上设置图像传感器还可以包括：提供设置在承载基板上的所述图像传感器；以及将承载基板固定于滤色像素阵列上。
如图10F所示，例如，在形成如图10B所示的结构之后，提供承载基板7，在承载基板7上通过半导体工艺形成图像传感器，图像传感器包括图像传感器的成像像素单元301/302/303，例如，形成每个图像传感器的成像像素单元包括形成光电二极管和与光电二极管电连接的开关晶体管，光电二极 管可以将照射到其上的光信号转换为电信号，开关晶体管可以控制是否读取光电二极管上采集光信号所得到的电信号。例如，形成每个图像传感器的成像像素单元还包括形成有源像素传感电路，有源像素传感电路例如可以为具有3个晶体管的3T1C构造或者具有4个晶体管的4T1C构造等。形成图像传感器的具体工艺可以参考相关技术。当然，也可以先在承载基板7上形成图像传感器，然后再形成如图10B所示的结构。本公开实施例对该步骤的先后顺序不作限定。
如图10G所示，将承载基板7固定于如图10B所示的滤色像素阵列上，例如将承载基板7粘贴于滤色像素阵列上，使得红色像素单元201、绿色像素单元202和蓝色像素单元203分别对应于图像传感器的成像像素单元301、302、303。
如图10H所示，形成覆盖滤色像素阵列和图像传感器的第二保护层5，从而形成彩膜基板10。形成第二保护层5的方法与图10E所示的相同，请参考之前的描述。
上述彩膜基板的制作方法以彩膜基板包括红、绿、蓝三种滤色像素单元为例进行说明，但同样适用于制作包括其他多种滤色像素单元的彩膜基板。本公开实施例提供的彩膜基板的制作方法中，不同的技术特征之间可以进行组合。
例如，图11A-11E为本公开一实施例提供的另一种彩膜基板的制作方法示意图。如图11A所示，提供衬底基板1，与图10A所示的相同。
如图11B所示，该工序与图10B所示的工序的区别在于，形成的滤色像素阵列包括六种颜色的滤色像素单元，分别为：红色像素单元201、绿色像素单元202、蓝色像素单元203、黄色像素单元204、青色像素单元205和品红色像素单元206。其他特征均与图10B所示的相同，请参考之前的描述。
如图11C所示，形成第一保护层4，该工序与图10C所示的相同。
如图11D所示，该工序与图10D的区别在于，形成了分别对应于红色像素单元201、绿色像素单元202、蓝色像素单元203、黄色像素单元204、青色像素单元205和品红色像素单元206的图像传感器的成像像素单元301、302、303、304、305、306。
如图11E所示，形成覆盖滤色像素阵列和图像传感器的第二保护层5，从而形成彩膜基板10。形成第二保护层5的方法与图10E所示的相同，请 参考之前的描述。
本公开至少一实施例还提供一种显示面板的制作方法。图12为本公开一实施例提供的一种显示面板的制作方法的流程图。如图12所示，该方法包括：提供阵列基板；提供本公开实施例提供的任意一种制作方法所得到的彩膜基板；将阵列基板和彩膜基板对盒，并使得图像传感器位于阵列基板和彩膜基板的衬底基板之间。该方法形成的显示面板为In-cell型，能够实现彩色拍摄功能，并且，该显示面板的制作方法简单。
例如，该显示面板可以为液晶显示面板，该显示面板的制作方法还包括在阵列基板和彩膜基板之间注入液晶，形成液晶层。例如，该显示面板还可以为OLED显示装置，例如白光有机发光二极管(W-OLED)显示装置，这种情况下，该显示面板的制作方法还包括在阵列基板上形成像素界定层、有机发光二极管等。
本公开至少一实施例还提供一种显示装置，该显示装置包括本公开实施例提供的任意一种显示面板。
示范性地，示范性地，图13为本公开一实施例提供的一种显示装置示意图。如图13所示，该显示装置20包括本公开实施例提供的任意一种显示面板8。例如，该显示装置可以为液晶显示装置、白光有机发光二极管显示装置等。
例如，该显示装置可以实现为如下的产品：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪、电子广告屏等任何具有显示功能的产品或部件。
图13只是一个包括本公开实施例提供的任意一种显示面板的显示装置的示意图，未示出显示装置的其他结构，本领域技术人员可参考常规技术，本实施例对此不作限定。
本公开实施例提供的显示装置可以实现在显示区实现彩色图像拍摄功能且轻薄，结构简单，易于制作，无需另外设置拍摄镜头。
本公开至少一实施例还提供一种显示装置的操作方法，该显示装置为本公开实施例的显示装置，包括设置在彩膜基板上的图像传感器，该方法包括：在显示装置的非显示操作期间，使用图像传感器执行拍摄操作。例如，显示装置还包括控制器。例如，控制器能够控制图像传感器的工作，同时，例如控制器还能够通过控制显示驱动电路来控制显示操作，以实现当执行拍摄操 作时，显示功能中断，当拍摄操作结束，恢复显示功能。控制器例如为中央处理器(CPU)、数字信号处理器(DSP)、可编程逻辑控制器(PLC)等。
例如，本公开一实施例提供的显示装置的操作方法中，在显示装置包括背光源的情况下，例如显示装置为液晶显示面板。该操作方法还包括：在拍摄操作期间，关闭背光源。例如，可以通过控制器控制背光源的关闭与开启，以实现当执行拍摄操作时，关闭背光源，防止背光影响成像，图像传感器利用环境光进行成像，完成拍摄；完成拍摄后，背光源打开，恢复显示功能。
以上所述仅是本公开的示范性实施方式，而非用于限制本公开的保护范围，本公开的保护范围由所附的权利要求确定。

Claims (20)

  1. 一种彩膜基板，包括：
    衬底基板；
    滤色像素阵列，其中，所述滤色像素阵列位于所述衬底基板上且包括呈阵列排布的滤色像素单元；以及
    图像传感器，设置于所述滤色像素阵列上，与至少部分所述滤色像素单元对应且配置为可接收经过所述滤色像素单元的光以用于成像。
  2. 根据权利要求1所述的彩膜基板，还包括：
    第一保护层，至少覆盖所述滤色像素阵列，其中，所述图像传感器设置于所述第一保护层上。
  3. 根据权利要求2所述的彩膜基板，其中，所述第一保护层为包括氮化硅、氧化硅或氮氧化硅的单层或多层结构。
  4. 根据权利要求1-3任一所述的彩膜基板，还包括：
    第二保护层，覆盖所述滤色像素阵列以及在所述滤色像素阵列上的图像传感器。
  5. 根据权利要求4所述的彩膜基板，其中，所述第二保护层的材料为树脂材料。
  6. 根据权利要求1所述的彩膜基板，还包括承载基板，其中，所述图像传感器设置于所述承载基板上，所述承载基板固定于所述滤色像素阵列上。
  7. 根据权利要求1所述的彩膜基板，其中，所述图像传感器包括成像像素单元，所述成像像素单元与所述滤色像素单元一一对应。
  8. 根据权利要求1-7任一所述的彩膜基板，其中，所述滤色像素单元包括红色像素单元、绿色像素单元、蓝色像素单元、黄色像素单元、青色像素单元和品红色像素单元。
  9. 一种显示面板，包括权利要求1-8任一所述的彩膜基板。
  10. 根据权利要求9所述的显示面板，还包括：
    阵列基板，与所述彩膜基板对盒；
    其中，所述图像传感器位于所述彩膜基板的衬底基板和所述阵列基板之间。
  11. 根据权利要求10所述的显示面板，其中，所述阵列基板包括驱动 像素阵列，所述驱动像素阵列对应于所述彩膜基板的滤色像素阵列；
    所述驱动像素阵列包括用于显示的开口区和位于所述开口区之间的非显示区，所述图像传感器在所述驱动像素阵列上的正投影位于所述非显示区中。
  12. 根据权利要求10所述的显示面板，其中，所述阵列基板包括位于所述非显示区的薄膜晶体管，所述图像传感器与所述薄膜晶体管在垂直于所述阵列基板的方向上至少部分重叠。
  13. 一种显示装置，包括权利要求9-12任一所述的显示面板。
  14. 一种根据权利要求13所述的显示装置的操作方法，包括：
    在所述显示面板的非显示操作期间，使用所述图像传感器执行拍摄操作。
  15. 根据权利要求14所述的显示装置的操作方法，其中，所述显示装置还包括背光源；
    所述操作方法还包括：在所述拍摄操作期间，关闭所述背光源。
  16. 一种彩膜基板的制作方法，包括：
    提供衬底基板；
    在所述衬底基板上形成滤色像素阵列，其中，所述滤色像素阵列包括呈阵列排布的滤色像素单元；以及
    在所述滤色像素阵列上设置图像传感器，其中，所述图像传感器与至少部分所述滤色像素单元对应且配置为可接收经过所述滤色像素单元的光以用于成像。
  17. 根据权利要求16所述的彩膜基板的制作方法，其中，在所述滤色像素阵列上设置所述图像传感器包括：
    在所述滤色像素阵列上通过半导体工艺制备所述图像传感器。
  18. 根据权利要求17所述的彩膜基板的制作方法，其中，在所述滤色像素阵列上制备所述图像传感器包括：
    形成至少覆盖所述滤色像素阵列的第一保护层；
    在所述第一保护层上通过所述半导体工艺制备所述图像传感器。
  19. 根据权利要求16-18任一所述的彩膜基板的制作方法，还包括：
    形成覆盖所述滤色像素阵列和所述图像传感器的第二保护层。
  20. 根据权利要求16所述的彩膜基板的制作方法，其中，在所述滤色 像素阵列上设置所述图像传感器包括：
    提供设置在承载基板上的所述图像传感器；以及
    将所述承载基板固定于所述滤色像素阵列上。
PCT/CN2018/114836 2018-04-26 2018-11-09 彩膜基板及制作方法、显示面板、显示装置及操作方法 WO2019205576A1 (zh)

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