WO2019205458A1 - 铜铟镓硒太阳能电池组件的制作方法及铜铟镓硒太阳能电池组件 - Google Patents

铜铟镓硒太阳能电池组件的制作方法及铜铟镓硒太阳能电池组件 Download PDF

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WO2019205458A1
WO2019205458A1 PCT/CN2018/106071 CN2018106071W WO2019205458A1 WO 2019205458 A1 WO2019205458 A1 WO 2019205458A1 CN 2018106071 W CN2018106071 W CN 2018106071W WO 2019205458 A1 WO2019205458 A1 WO 2019205458A1
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film
graphene
indium gallium
copper indium
gallium selenide
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PCT/CN2018/106071
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English (en)
French (fr)
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赵树利
杨立红
叶亚宽
王磊
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北京铂阳顶荣光伏科技有限公司
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Priority claimed from CN201820628805.4U external-priority patent/CN208570640U/zh
Priority claimed from CN201810401318.9A external-priority patent/CN110416326A/zh
Application filed by 北京铂阳顶荣光伏科技有限公司 filed Critical 北京铂阳顶荣光伏科技有限公司
Publication of WO2019205458A1 publication Critical patent/WO2019205458A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes

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  • the present disclosure relates to the field of thin film solar cells, and in particular to a method for fabricating a copper indium gallium selenide solar cell module.
  • Copper indium gallium selenide (CIGS) thin film solar cell modules usually use aluminum zinc oxide (AZO) as a transparent conductive layer (TCO) as a front electrode of a battery chip for collecting photocurrent generated by a battery.
  • AZO aluminum zinc oxide
  • TCO transparent conductive layer
  • the AZO layer is required to have both high transmittance and low resistivity.
  • the AZO layer is usually prepared by a vacuum magnetron sputtering coating device.
  • the transmittance and resistivity of the AZO layer are also different depending on the doping concentration of Al 2 O 3 and the preparation process of magnetron sputtering.
  • the thickness of the AZO layer is about 800 nm to 1200 nm.
  • the AZO layer is usually prepared by vacuum magnetron sputtering coating equipment.
  • the vacuum magnetron sputtering coating equipment occupies a relatively large space, and the equipment price is high, and the maintenance cost is high.
  • it is limited by the negative correlation between the conductivity and light transmittance of the AZO layer itself, that is, the larger the thickness of the AZO layer, the better the conductivity, but the lower the transmittance, the AZO layer under the current process conditions.
  • the thickness needs to be 800 nm to 1200 nm in order to achieve good conductivity and transmittance.
  • the photoelectric properties of the AZO layer depend on the structure and composition of the target during the preparation of the AZO layer, and require a reliable and stable preparation process, which requires high preparation process and is difficult to prepare.
  • One aspect of the present disclosure provides a method of fabricating a copper indium gallium selenide solar cell module, including:
  • the molybdenum layer coating, the copper indium gallium selenide film, the cadmium sulfide film, and the intrinsic zinc oxide film are encapsulated by using an EVA film with a graphene composite film; wherein the graphene-based composite film includes a graphene film and is disposed at the same Nanowires on graphene films.
  • the method further comprises: combining the graphene base The film is transferred to the surface of the EVA film.
  • transferring the graphene-based composite film to the surface of the EVA film comprises: transferring the graphene-based composite film to the surface of the EVA film by thermal imprint transfer.
  • the method before transferring the graphene-based composite film to the surface of the EVA film, the method further comprises:
  • the graphene-based composite film is synthesized by spraying or spin coating a nanowire network structure onto a graphene film.
  • the graphene film comprises a single layer or a small layer of graphene film, and the graphene film has a thickness greater than 0 and less than or equal to 1 nm.
  • the graphene-based composite film has a thickness greater than 0 and less than or equal to 200 nm.
  • the molybdenum layer coating film, the copper indium gallium selenide film, the cadmium sulfide film, and the intrinsic zinc oxide film are sequentially formed on the substrate, and the molybdenum layer coating film, copper indium is encapsulated by using the EVA film with the graphene composite film.
  • the method Prior to the gallium selenide film, the cadmium sulfide film, and the intrinsic zinc oxide film, the method further includes:
  • a zinc oxide aluminum AZO is deposited onto the intrinsic zinc oxide film to form an AZO layer.
  • the encapsulating the molybdenum layer coating, the copper indium gallium selenide film, the cadmium sulfide film and the intrinsic zinc oxide film by using the EVA film with the graphene composite film comprises:
  • the molybdenum layer coating, the copper indium gallium selenide film, the cadmium sulfide film, the intrinsic zinc oxide film, and the AZO layer are encapsulated by using an EVA film with a graphene composite film.
  • the thickness of the AZO layer is 20 nm to 400 nm.
  • the molybdenum layer coating film, the copper indium gallium selenide film, the cadmium sulfide film and the intrinsic zinc oxide film are sequentially formed on the substrate, and the method comprises:
  • the intrinsic zinc oxide is deposited into a cadmium sulfide film to form an intrinsic zinc oxide film.
  • Another aspect of the present disclosure also provides a copper indium gallium selenide solar cell module, comprising:
  • a back electrode disposed on the substrate
  • a light absorbing layer disposed on the back electrode
  • a buffer layer disposed on the light absorbing layer
  • a window layer disposed on the buffer layer
  • the window layer comprises a high resistance layer and a transparent conductive layer
  • the transparent conductive layer comprises a graphene-based composite film disposed on the high resistance layer
  • the graphene-based composite film has a thickness greater than 0 and less than or equal to 200 nm.
  • the graphene-based composite film comprises: a graphene film; and a nanowire disposed on the graphene film.
  • the graphene film comprises a single layer or a small layer of graphene film, and the graphene film has a thickness greater than 0 and less than or equal to 1 nm.
  • the transparent conductive layer further includes an AZO layer, and the thickness of the AZO layer is 20 nm to 400 nm.
  • the nanowires are disposed on a side away from the high resistance layer.
  • the nanowires form a network structure.
  • nanowires comprise at least one metal nanowire and/or non-metal nanowire.
  • the non-metallic nanowires comprise carbon nanotubes.
  • the copper indium gallium selenide solar cell module further comprises: an EVA layer encapsulating the back electrode, the light absorbing layer, the buffer layer and the window layer, and a glass layer disposed on the EVA layer.
  • Another aspect of the present disclosure further provides a method for fabricating a copper indium gallium selenide solar cell module, wherein a molybdenum layer coating film, a copper indium gallium selenide film, a cadmium sulfide film, and an intrinsic zinc oxide film are sequentially formed on the substrate;
  • the graphene-based composite film comprises a graphene film and nanowires disposed on the graphene film.
  • the graphene-based composite film is transferred to the substrate including the molybdenum layer coating film, the copper indium gallium selenide film, the cadmium sulfide film, and the intrinsic zinc oxide film by hot stamp transfer.
  • the graphene-based composite film is transferred to the substrate including the molybdenum layer coating film, the copper indium gallium selenide film, the cadmium sulfide film, and the intrinsic zinc oxide film by means of solution assisted transfer.
  • FIG. 1 is a schematic structural view of a copper indium gallium selenide solar cell module according to an embodiment of the present disclosure
  • FIG. 2 is a schematic structural view of a copper indium gallium selenide solar cell module according to another embodiment of the present disclosure
  • FIG. 3 is a flow chart of a method of fabricating a copper indium gallium selenide solar cell module in accordance with an embodiment of the present disclosure
  • FIG. 4 is a flow chart of a method of fabricating a copper indium gallium selenide solar cell module in accordance with an embodiment of the present disclosure.
  • a copper indium gallium selenide solar cell module includes: a substrate 1 , a back electrode 2 disposed on the substrate 1 , a light absorbing layer 3 disposed on the back electrode 2, a buffer layer 4 disposed on the light absorbing layer 3, a window layer disposed on the buffer layer 4, and an ethylene-vinyl acetate copolymer (EVA) layer disposed on the window layer 7, and a glass layer 8 disposed on the EVA layer 7.
  • EVA ethylene-vinyl acetate copolymer
  • the window layer includes an i-ZnO thin film, that is, a high-resistance layer 5 and a transparent conductive layer 6, and the transparent conductive layer 6 includes a graphene-based composite film disposed on the high-resistance layer 5.
  • the graphene-based composite film includes: a graphene film and nanowires disposed on the graphene film.
  • the graphene film is a single layer or a small layer of graphene film, and the graphene film has a thickness of more than 0 and less than or equal to 1 nm.
  • the graphene-based composite film has a light transmittance of up to 94% and a resistivity of less than 8 ⁇ /sq, and the performance is remarkably superior to that of the AZO film, and has excellent light transmittance and low resistivity.
  • Graphene refers to a two-dimensional carbon material consisting of a layer of carbon atoms periodically and closely packed in a benzene ring structure (ie, a hexagonal honeycomb structure), and has a thickness of generally 0.33 nm.
  • graphene refers to 3 to 10 layers of benzene ring structure (ie hexagonal honeycomb structure) periodically closely packed carbon atoms in different stacking methods (including ABC stacking, ABA stacking, etc.) A two-dimensional carbon material composed of stacks.
  • the nanowires are nanowires of a network structure, wherein the nanowires may include at least one metal nanowire, or may be at least one non-metal nanowire, such as carbon nanotubes or the like.
  • the copper indium gallium selenide solar cell module according to the embodiment of the present disclosure effectively improves the transparent conductive layer of the copper indium gallium selenide solar cell module by introducing a graphene-based composite film as a transparent conductive layer in the preparation process of the copper indium gallium selenide solar cell.
  • the light transmittance and conductivity improve the conversion efficiency of the copper indium gallium selenide solar cell module.
  • the transparent conductive layer further includes an AZO layer 9 having a thickness greater than 0 and less than or equal to 400 nm, such as 20 nm, 50 nm, 80 nm, 100 nm, 200 nm, 260 nm, 300 nm, 350 nm, 380 nm, but in this case.
  • the thickness of the AZO layer according to the disclosed embodiment is not limited to 400 nm or less as long as the overall performance of the AZO and/or graphene-based composite film is superior to that of the AZO layer under the thickness of the prior art process, AZO and/or graphene.
  • the thickness of either of the base composite films, or the thickness of either one, falls within the scope of the present disclosure.
  • the AZO layer 9 is disposed on the high resistance layer, the nanowire grid structure is disposed on a side close to the high resistance layer 5, or the nanowire grid structure is disposed on a side away from the high resistance layer 5, and the present disclosure does not Make specific limits.
  • the nanowire is disposed on the side away from the high-resistance layer, and during the process of transferring to the EVA film by the thermal imprint method, the damage of the metal nanowire by the high temperature is reduced, and at the same time It also reduces the difficulty of the process.
  • FIG. 3 is a block flow diagram of a method of fabricating a copper indium gallium selenide solar cell module in accordance with an embodiment of the present disclosure. As shown in FIG. 3, the specific implementation process of using the graphene-based composite film as the front electrode of the copper indium gallium selenide solar cell module is as follows:
  • molybdenum may be deposited onto the substrate 1 by a vacuum magnetron sputtering method to form a molybdenum layer film.
  • the molybdenum layer film is used as the back electrode of the battery chip.
  • the thickness of the molybdenum layer film is from 300 nm to 500 nm.
  • the substrate 1 may be a glass substrate such as clean tempered glass.
  • copper, indium, gallium, and selenium may be deposited on the surface of the molybdenum layer film by a co-evaporation deposition method or a magnetron sputtering selenization method to form a copper indium gallium selenide film.
  • a copper indium gallium selenide film is used as the light absorbing layer 3
  • the film thickness of the copper indium gallium selenide film is 2 ⁇ m to 3 ⁇ m.
  • preparing a buffer layer 4 depositing cadmium sulfide on the surface of the copper indium gallium selenide film to form a cadmium sulfide film.
  • cadmium sulfide may be deposited on the surface of the copper indium gallium selenide film by a chemical water bath deposition method to form a 30 nm to 80 nm thick cadmium sulfide (CdS) film.
  • CdS cadmium sulfide
  • a cadmium sulfide film is used as the buffer layer 4.
  • preparing the window layer comprises:
  • intrinsic zinc oxide i-ZnO
  • i-ZnO intrinsic zinc oxide
  • intrinsic zinc oxide may be deposited on the surface of the cadmium sulfide film by a vacuum magnetron sputtering method to form an intrinsic zinc oxide film having a thickness of 50 nm to 100 nm, that is, a high resistance layer 5.
  • preparing the window layer further includes:
  • zinc oxide aluminum may be deposited on the surface of the intrinsic zinc oxide film by a vacuum magnetron sputtering method to form an AZO film.
  • the thickness of the AZO film is greater than 0 and less than or equal to 400 nm.
  • the graphene-based composite film may be transferred to the surface of the EVA layer 7 by a hot stamp transfer method.
  • the copper indium gallium selenide thin film solar cell module can be obtained by completing the subsequent packaging process, as shown in FIGS. 1 and 2.
  • step S150 if the graphene composite film is to be transferred to the intrinsic zinc oxide film, the relatively mature transfer process is a solution-assisted transfer method, but the intrinsic zinc oxide contact with the solution easily causes changes in its physicochemical properties. Therefore, the graphene-based composite film is transferred to the surface of the EVA layer by hot stamping transfer, and then encapsulated with the EVA layer to realize the setting of the graphene-based composite film on the intrinsic zinc oxide film without causing the intrinsic property. A change in the physicochemical properties of zinc oxide.
  • the thickness of the graphene composite film is less than 1 nm, which is very thin. If it is directly covered on the intrinsic zinc oxide film, the graphene-based composite film is easily broken and folded, and the graphene is transferred by hot stamping. The transfer of the base composite film to the surface of the EVA layer can solve this problem.
  • the method for manufacturing the gallium selenide solar cell module further comprises: S143, preparing a graphene-based composite film: preparing a metal nanowire network structure on the graphene film to form a graphene-based composite film.
  • a layer of metal nanowire network structure can be prepared on the graphene film by spray coating or spin coating to form a graphene-based composite film.
  • the diameter of the nanowire is ⁇ 100 nm
  • the thickness of the graphene-based composite film is ⁇ 200 nm.
  • the graphene film may be a graphene film single layer or a small layer graphene film, which is usually grown on the surface of the copper foil and has a thickness of ⁇ 1 nm.
  • the thickness of the graphene-based composite film is ⁇ 200 nm, which is thinner than the thickness of the AZO film in the related art of about 800 nm to 1200 nm, and the graphite is produced by spraying or spin coating.
  • the alkenyl composite film reduces the difficulty of the process, and the transmittance of the graphene-based composite film can be as high as 94%, and the resistivity is lower than 8 ⁇ /sq, and has excellent light transmittance and low resistivity, and the performance is significantly better than AZO. film.
  • a method of fabricating a copper indium gallium selenide solar cell module includes the following steps S201 to S207.
  • the cleaned glass substrate may be subjected to a molybdenum layer coating using a magnetron sputtering technique to form a molybdenum layer film.
  • the molybdenum layer film has a thickness of 200 nm to 500 nm and a sheet resistance of 500 m ⁇ to 1000 m ⁇ .
  • S202 preparing a light absorbing layer: depositing copper, indium, gallium, and selenium on the surface of the molybdenum layer film to form a copper indium gallium selenide film.
  • copper, indium, gallium, and selenium may be deposited on the surface of the molybdenum layer film by a co-evaporation technique to form a copper indium gallium selenide Cu(In,Ga)Se 2 film.
  • a copper indium gallium selenide film is used as the light absorbing layer, and the thickness of the light absorbing layer is 1.8 ⁇ m to 2.5 ⁇ m.
  • the atomic ratio of copper to the Group III element is between 0.75 and 1.
  • the atomic ratio of gallium to the Group III element is between 0.2 and 0.5.
  • S203 preparing a buffer layer: depositing cadmium sulfide on the surface of the copper indium gallium selenide film to form a cadmium sulfide film.
  • cadmium sulfide may be deposited on the surface of the copper indium gallium selenide film by a chemical water bath method to form a cadmium sulfide film having a thickness of 20 nm to 80 nm. Among them, a cadmium sulfide film is used as a buffer layer.
  • the intrinsic zinc oxide may be deposited on the surface of the cadmium sulfide film by magnetron sputtering to form an intrinsic zinc oxide film, ie, an intrinsic zinc oxide high resistance layer; and the graphene-based composite film is transferred to the intrinsic A window layer is formed on the zinc oxide film.
  • S204 prior to transferring the graphene-based composite film onto the intrinsic zinc oxide film, S204 further comprises: depositing zinc aluminum oxide (AZO) on the surface of the intrinsic zinc oxide film to form an AZO film.
  • AZO zinc aluminum oxide
  • an aluminum-doped zinc oxide may be deposited on the surface of the intrinsic zinc oxide film by a magnetron sputtering method to form an aluminum-doped zinc oxide (AZO) layer.
  • AZO aluminum-doped zinc oxide
  • the intrinsic zinc oxide thin film that is, the high resistance layer, the graphene-based composite film, and the AZO layer collectively function as a window layer.
  • the thickness of the AZO layer is 50 nm to 400 nm.
  • the graphene-based composite film is encapsulated by the EVA film, and the property change of the graphene-based composite material can be avoided.
  • the preparation of the solar cell module is completed by a process such as EVA film laying, lamination, and the like.
  • a method for fabricating a copper indium gallium selenide solar cell module according to an embodiment of the present disclosure which is effective for improving copper indium gallium selenide thin film solar energy by introducing a graphene-based composite film as a transparent conductive layer in a preparation process of a copper indium gallium selenide solar cell module.
  • the light transmittance and conductivity of the transparent conductive layer of the battery component improve the conversion efficiency of the copper indium gallium selenide solar cell module, and reduce the difficulty in preparing the transparent conductive layer, and also reduce the difficulty in preparing the copper indium gallium selenide solar cell module.

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Abstract

本公开涉及一种铜铟镓硒太阳能电池组件及制作方法，制作方法包括：在基板上依次形成钼层镀膜、铜铟镓硒薄膜、硫化镉薄膜和本征氧化锌薄膜；利用带有石墨烯复合薄膜封装所述钼层镀膜、铜铟镓硒薄膜、硫化镉薄膜和本征氧化锌薄膜。其中，所述石墨烯基复合薄膜包括石墨烯薄膜和设置在石墨烯薄膜上的纳米线。

Description

铜铟镓硒太阳能电池组件的制作方法及铜铟镓硒太阳能电池组件
相关申请的交叉引用
本申请主张在2018年4月28日在中国提交的中国专利申请号No.201810401318.9的优先权，并主张在2018年4月28日在中国提交的中国专利申请号No.201820628805.4的优先权，其全部内容通过引用包含于此。
技术领域
本公开涉及薄膜太阳能电池技术领域，特别地涉及一种铜铟镓硒太阳能电池组件的制作方法。
背景技术
铜铟镓硒(CIGS)薄膜太阳能电池组件，通常都是利用氧化锌铝(AZO)充当透明导电层(TCO)，作为电池芯片的前电极，用来收集电池产生的光电流。为了提高CIGS薄膜太阳能电池组件的转换效率，要求AZO层需同时具备较高的透光率和较低的电阻率。
AZO层通常是利用真空磁控溅射镀膜设备进行制备，根据Al 2O 3的掺杂浓度以及磁控溅射制备工艺的不同，AZO层的透光率和电阻率也存在差异。目前的CIGS薄膜太阳能电池组件中，AZO层的厚度约为800nm～1200nm。
AZO层通常是利用真空磁控溅射镀膜设备进行制备，真空磁控溅射镀膜设备占地空间比较大，且设备价格较高，维护成本高。另一方面，受限于AZO层本身导电性和透光率的负相关关系，即AZO层的厚度越大，导电性越好，但同时透过率越低，导致目前工艺条件下，AZO层的厚度需要达到800nm～1200nm，才能兼顾较好的导电性和透过率。此外，AZO层的光电性质依赖于AZO层制备过程中的靶材的结构和组分，并且要求具有可靠、稳定的制备工艺，对制备工艺要求高，制备难度大。
发明内容
本公开的一个方面提供了一种铜铟镓硒太阳能电池组件的制作方法，包 括：
在基板上依次形成钼层镀膜、铜铟镓硒薄膜、硫化镉薄膜和本征氧化锌薄膜；
利用带有石墨烯复合薄膜的EVA薄膜封装所述钼层镀膜、铜铟镓硒薄膜、硫化镉薄膜和本征氧化锌薄膜；其中，所述石墨烯基复合薄膜包括石墨烯薄膜和设置在所述石墨烯薄膜上的纳米线。
其中，在利用带有石墨烯复合薄膜的EVA薄膜封装所述钼层镀膜、铜铟镓硒薄膜、硫化镉薄膜和本征氧化锌薄膜之前，所述方法还包括：将所述石墨烯基复合薄膜转移到所述EVA薄膜表面。
其中，所述将所述石墨烯基复合薄膜转移到所述EVA薄膜表面包括：采用热压印转移的方式将所述石墨烯基复合薄膜转移到所述EVA薄膜表面。
其中，在将所述石墨烯基复合薄膜转移到所述EVA薄膜表面之前，所述方法还包括：
喷涂或旋涂纳米线网络结构到在石墨烯薄膜上，合成所述石墨烯基复合薄膜。
其中，所述石墨烯薄膜包括单层或少层石墨烯薄膜，所述石墨烯薄膜的厚度大于0且小于等于1nm。
其中，所述石墨烯基复合薄膜的厚度大于0且小于等于200nm。
其中，所述在基板上依次形成钼层镀膜、铜铟镓硒薄膜、硫化镉薄膜和本征氧化锌薄膜之后且在利用带有石墨烯复合薄膜的EVA薄膜封装所述钼层镀膜、铜铟镓硒薄膜、硫化镉薄膜和本征氧化锌薄膜之前，所述方法还包括：
沉积氧化锌铝AZO到本征氧化锌薄膜以形成AZO层。
其中，所述利用带有石墨烯复合薄膜的EVA薄膜封装所述钼层镀膜、铜铟镓硒薄膜、硫化镉薄膜和本征氧化锌薄膜包括：
利用带有石墨烯复合薄膜的EVA薄膜封装所述钼层镀膜、铜铟镓硒薄膜、硫化镉薄膜、本征氧化锌薄膜和AZO层。
其中，所述AZO层的厚度为20nm～400nm。
其中，所述在基板上依次形成钼层镀膜、铜铟镓硒薄膜、硫化镉薄膜和本征氧化锌薄膜，包括：
沉积钼到基板上，形成钼层镀膜；
沉积铜、铟、镓、硒到钼层镀膜，形成铜铟镓硒薄膜；
沉积硫化镉到铜铟镓硒薄膜，形成硫化镉薄膜；
沉积本征氧化锌到硫化镉薄膜，形成本征氧化锌薄膜。
本公开的另一个方面还提供了一种铜铟镓硒太阳能电池组件，包括：
基板；
背电极，设置在所述基板上；
光吸收层，设置在所述背电极上；
缓冲层，设置在所述光吸收层上；
窗口层，设置在所述缓冲层上；
其中，所述窗口层包括高阻层和透明导电层，所述透明导电层包括设置在所述高阻层上的石墨烯基复合薄膜。
其中，所述石墨烯基复合薄膜的厚度大于0且小于等于200nm。
其中，所述石墨烯基复合薄膜包括：石墨烯薄膜；以及纳米线，设置在石墨烯薄膜上。
其中，所述石墨烯薄膜包括单层或少层石墨烯薄膜，所述石墨烯薄膜的厚度大于0且小于等于1nm。
其中，所述透明导电层还包括AZO层，AZO层的厚度是20nm～400nm。
其中，所述纳米线设置在远离高阻层的一面。
其中，所述纳米线形成网络结构。
其中，所述纳米线包括至少一种金属纳米线和/或非金属纳米线。
其中，所述非金属纳米线包括碳纳米管。
其中，所述铜铟镓硒太阳能电池组件还包括：封装所述背电极、光吸收层、缓冲层和窗口层的EVA层，以及设置在所述EVA层上的玻璃层。
本公开的另一个方面还提供了一种铜铟镓硒太阳能电池组件的制作方法，在基板上依次形成钼层镀膜、铜铟镓硒薄膜、硫化镉薄膜和本征氧化锌薄膜；
将石墨烯基复合薄膜转移到包括形成有钼层镀膜、铜铟镓硒薄膜、硫化镉薄膜和本征氧化锌薄膜的所述基板上；
制备EVA薄膜封装所述钼层镀膜、铜铟镓硒薄膜、硫化镉薄膜、本征氧 化锌薄膜、石墨烯基复合薄膜；
其中，所述石墨烯基复合薄膜包括石墨烯薄膜和设置在所述石墨烯薄膜上的纳米线。
其中，采用热压印转移的方式将所述石墨烯基复合薄膜转移到所述包括形成有钼层镀膜、铜铟镓硒薄膜、硫化镉薄膜和本征氧化锌薄膜的基板上。
其中，采用溶液辅助转移的方式将所述石墨烯基复合薄膜转移到所述包括形成有钼层镀膜、铜铟镓硒薄膜、硫化镉薄膜和本征氧化锌薄膜的基板上。
附图说明
下面，将结合附图对本公开的可选实施方式进行进一步详细的说明，其中：
图1是根据本公开的一个实施例的铜铟镓硒太阳能电池组件的结构示意图；
图2是根据本公开的另一个实施例的铜铟镓硒太阳能电池组件的结构示意图；
图3是根据本公开的一个实施例的铜铟镓硒太阳能电池组件的制作方法的流程框图；以及
图4是根据本公开的一个实施例的铜铟镓硒太阳能电池组件的制作方法的流程框图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本公开一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本公开保护的范围。
在以下的详细描述中，可以参看作为本申请一部分用来说明本申请的特定实施例的各个说明书附图。在附图中，相似的附图标记在不同图式中描述大体上类似的组件。本申请的各个特定实施例在以下进行了足够详细的描述， 使得具备本领域相关知识和技术的普通技术人员能够实施本申请的技术方案。应当理解，还可以利用其它实施例或者对本申请的实施例进行结构、逻辑或者电性的改变。
图1是根据本公开的一个实施例的铜铟镓硒太阳能电池组件的结构示意图，如图1所示，铜铟镓硒太阳能电池组件包括：基板1，设置在基板1上的背电极2，设置在背电极2上的光吸收层3，设置在光吸收层3上的缓冲层4，设置在缓冲层4上的窗口层，设置在窗口层上的乙烯-醋酸乙烯共聚物(EVA)层7，和设置在EVA层7上的玻璃层8。
其中，窗口层包括i～ZnO薄膜即高阻层5和透明导电层6，透明导电层6包括设置在高阻层5上的石墨烯基复合薄膜。在本公开的一个实施例中，石墨烯基复合薄膜包括：石墨烯薄膜和设置在石墨烯薄膜上的纳米线。其中，石墨烯薄膜为单层或少层石墨烯薄膜，石墨烯薄膜的厚度为大于0且小于等于1nm。石墨烯基复合薄膜的透光率可高达94％，同时电阻率低于8Ω/sq，性能显著优于AZO薄膜性能，具有优良的透光性和低电阻率。
单层石墨烯(Graphene)：指由一层以苯环结构(即六角形蜂巢结构)周期性紧密堆积的碳原子构成的一种二维碳材料，厚度一般为0.33nm。
少层石墨烯(Few～layer)：指由3～10层以苯环结构(即六角形蜂巢结构)周期性紧密堆积的碳原子以不同堆垛方式(包括ABC堆垛，ABA堆垛等)堆垛构成的一种二维碳材料。
根据本公开的一个实施例，纳米线为网络结构的纳米线，其中，纳米线可以包括至少一种金属纳米线，也可以是至少一种非金属纳米线，如碳纳米管等。
本公开实施例所涉及的铜铟镓硒太阳能电池组件，通过在铜铟镓硒太阳能电池制备过程中引入石墨烯基复合薄膜充当透明导电层，有效的提高铜铟镓硒太阳能电池组件透明导电层的透光性和导电性，提高了铜铟镓硒太阳能电池组件的转换效率。
图2所示为根据本公开的另一个实施例的铜铟镓硒太阳能电池组件的结构示意图。如图2所示，透明导电层还包括AZO层9，AZO层9的厚度大于0且小于等于400nm，如20nm，50nm，80nm，100nm，200nm，260nm，300nm， 350nm，380nm，但是，在本公开实施例所涉及的AZO层的厚度不限于小于等于400nm，只要AZO和/或石墨烯基复合薄膜的整体性能优于现有技术工艺厚度条件下的AZO层的性能，AZO和/或石墨烯基复合薄膜两者的厚度，或者任一者的厚度就落入本公开的保护范围。
进一步的，AZO层9设置在高阻层上，纳米线网格结构设置在接近高阻层5的一面，或者，纳米线网格结构设置在远离高阻层5的一面，对此本公开不做具体限定。
与设置于接近高阻层的一面相比，纳米线设置于在远离高阻层的一面时，在利用热压印方法转移到EVA薄膜的过程中，减少了高温对金属纳米线的损伤，同时也降低了工艺难度。
图3是根据本公开的一个实施例的铜铟镓硒太阳能电池组件的制作方法的流程框图。如图3所示，将石墨烯基复合薄膜作为铜铟镓硒太阳能电池组件的前电极的具体实施过程如下：
S110，制备背电极2：将钼沉积到基板上以形成钼层薄膜。
在一实施例中，可以利用真空磁控溅射方法将钼沉积到基板1上以形成钼层薄膜。其中，钼层膜膜作为电池芯片的背电极。钼层薄膜厚度为300nm～500nm。其中，基板1可以为玻璃基板，如清洁的钢化玻璃。
S120，制备光吸收层3：在钼层薄膜表面沉积铜、铟、镓、硒以形成铜铟镓硒薄膜。
在一实施例中，可利用共蒸发沉积方法或者磁控溅射硒化方法，在钼层薄膜表面沉积铜、铟、镓、硒以形成铜铟镓硒薄膜。其中，铜铟镓硒薄膜作为光吸收层3，且铜铟镓硒薄膜的薄膜厚度为2μm～3μm。
S130，制备缓冲层4：在铜铟镓硒薄膜表面沉积硫化镉以形成硫化镉薄膜。
在一实施例中，可利用化学水浴沉积方法在铜铟镓硒薄膜表面沉积硫化镉以形成30nm～80nm厚的硫化镉(CdS)薄膜。其中，硫化镉薄膜作为缓冲层4。
S140，制备窗口层。
在一实施例中，制备窗口层包括：
S141，在硫化镉薄膜表面沉积本征氧化锌(i～ZnO)，以形成本征氧化锌薄膜。
在一实施例中，可利用真空磁控溅射方法，在硫化镉薄膜表面沉积本征氧化锌以形成厚度为50nm～100nm的本征氧化锌薄膜，即高阻层5。
可选的，在一实施例中，制备窗口层还包括：
S142，在本征氧化锌薄膜表面沉积氧化锌铝(AZO)以形成AZO薄膜。
在一实施例中，可利用真空磁控溅射方法，在本征氧化锌薄膜表面沉积氧化锌铝以形成AZO薄膜。其中，AZO薄膜的厚度为大于0且小于等于400nm。
S150，将石墨烯基复合薄膜转移到EVA层7的表面。
在一实施例中，可采用热压印转移的方法将石墨烯基复合薄膜转移到EVA层7的表面。
S160，利用带有石墨烯复合薄膜的EVA层封装所述钼层镀膜、铜铟镓硒薄膜、硫化镉薄膜和本征氧化锌薄膜。
在上述步骤之后，完成后续封装过程即可得到铜铟镓硒薄膜太阳能电池组件，如图1和图2所示。
在步骤S150中，如果要把石墨烯复合薄膜转移到本征氧化锌薄膜上，目前比较成熟的转移工艺是溶液辅助转移方法，但本征氧化锌与溶液接触很容易引起其物理化学性质变化，因此采用热压印转移的方法将石墨烯基复合薄膜转移到EVA层表面，再用EVA层进行封装，以实现将石墨烯基复合薄膜设置到本征氧化锌薄膜上，而不会引起本征氧化锌的物理化学性质的变化。
进一步的，石墨烯复合薄膜的厚度不到1nm，非常薄，如果直接覆盖到本征氧化锌薄膜上，很容易造成石墨烯基复合薄膜破裂、折叠等，用热压印转移的方法将石墨烯基复合薄膜转移到EVA层表面，可以解决这个问题。
图4是根据本公开的一个实施例的铜铟镓硒太阳能电池组件的制作方法的流程框图。图4所示的铜铟镓硒太阳能电池组件的制作方法与图3所示的铜铟镓硒太阳能电池组件的制作方法相似，两者之间的不同之处在于：图4所示的铜铟镓硒太阳能电池组件的制作方法，在步骤S150之前，还包括：S143，制作石墨烯基复合薄膜：在石墨烯薄膜上制备一层金属纳米线网络结构，以形成石墨烯基复合薄膜。在一实施例中，可利用喷涂或旋涂的方法在石墨烯 薄膜上制备一层金属纳米线网络结构，以形成石墨烯基复合薄膜。其中，纳米线直径≤100nm，石墨烯基复合薄膜的厚度≤200nm。其中，石墨烯薄膜可以为石墨烯薄膜单层或少层石墨烯薄膜，通常是生长在铜箔表面，厚度≤1nm。
在本公开实施例中，所述石墨烯基复合薄膜的厚度≤200nm，比起相关技术中的AZO薄膜约为800nm～1200nm的厚度，厚度明显变薄，并且使用喷涂或旋涂的方法制作石墨烯基复合薄膜，降低了工艺难度，同时石墨烯基复合薄膜的透光率可高达94％，同时电阻率低于8Ω/sq，具有优良的透光率和低电阻率，性能显著优于AZO薄膜。
根据本公开的另一个实施例，铜铟镓硒太阳能电池组件的制作方法，包括以下步骤S201至S207。
S201，制备背电极：将钼沉积到基板上以形成钼层薄膜。
在一实施例中，可以利用磁控溅射技术对清洗后的玻璃基板进行钼层镀膜以形成钼层薄膜。其中，该钼层薄膜的厚度为200nm～500nm，薄膜方块电阻为500mΩ～1000mΩ。
S202，制备光吸收层：在钼层薄膜表面沉积铜、铟、镓、硒以形成铜铟镓硒薄膜。
在一实施例中，可利用共蒸发技术在钼层薄膜表面蒸镀铜、铟、镓、硒以形成铜铟镓硒Cu(In,Ga)Se 2薄膜。铜铟镓硒薄膜作为光吸收层，光吸收层的厚度为1.8μm～2.5μm。在一实施例中，铜与第三族元素的原子比例在0.75～1之间。镓与第三族元素的原子比例在0.2～0.5之间。
S203，制备缓冲层：在铜铟镓硒薄膜表面沉积硫化镉以形成硫化镉薄膜。
在一实施例中，可利用化学水浴法在铜铟镓硒薄膜表面沉积硫化镉以形成20nm～80nm厚的硫化镉薄膜。其中，硫化镉薄膜作为缓冲层。
S204，制备窗口层。
在一实施例中，可利用磁控溅射方法在硫化镉薄膜表面沉积本征氧化锌以形成本征氧化锌薄膜，即本征氧化锌高阻层；并石墨烯基复合薄膜转移到本征氧化锌薄膜上，形成窗口层。
在本公开的其它实施例中，在将石墨烯基复合薄膜转移到本征氧化锌薄膜上之前，S204还包括：在本征氧化锌薄膜表面沉积氧化锌铝(AZO)以形 成AZO薄膜。
在一实施例中，可利用磁控溅射方法在本征氧化锌薄膜表面沉积铝掺杂氧化锌以形成铝掺杂氧化锌(AZO)层。此时，本征氧化锌薄膜即高阻层、石墨烯基复合薄膜和AZO层共同作为窗口层。其中，AZO层的厚度为50nm～400nm。
S206，利用EVA薄膜封装所述钼层镀膜、铜铟镓硒薄膜、硫化镉薄膜、本征氧化锌薄膜和石墨烯基复合薄膜。
在电池组件的制备过程中，利用EVA薄膜封装石墨烯基复合薄膜，可以避免石墨烯基复合材料的性质变化。
S207，通过EVA薄膜敷设、层压等工艺，完成对太阳能电池组件的制备。
本公开实施例所涉及的铜铟镓硒太阳能电池组件的制作方法，通过在铜铟镓硒太阳能电池组件制备过程中引入石墨烯基复合薄膜充当透明导电层，有效的提高铜铟镓硒薄膜太阳能电池组件透明导电层的透光性和导电性，提高了铜铟镓硒太阳能电池组件的转换效率，并且降低了透明导电层的制备难度，同时也降低了铜铟镓硒太阳能电池组件的制备难度。
上述实施例仅供说明本公开之用，而并非是对本公开的限制，有关技术领域的普通技术人员，在不脱离本公开范围的情况下，还可以做出各种变化和变型，因此，所有等同的技术方案也应属于本公开公开的范畴。

Claims (22)

  1. 一种铜铟镓硒太阳能电池组件的制作方法，包括：
    在基板上依次形成钼层镀膜、铜铟镓硒薄膜、硫化镉薄膜和本征氧化锌薄膜；
    利用带有石墨烯复合薄膜的EVA薄膜封装所述钼层镀膜、铜铟镓硒薄膜、硫化镉薄膜和本征氧化锌薄膜；
    其中，所述石墨烯基复合薄膜包括石墨烯薄膜和设置在所述石墨烯薄膜上的纳米线。
  2. 根据权利要求1所述的铜铟镓硒太阳能电池组件的制作方法，其中，在利用带有石墨烯复合薄膜的EVA薄膜封装所述钼层镀膜、铜铟镓硒薄膜、硫化镉薄膜和本征氧化锌薄膜之前，所述方法还包括：将所述石墨烯基复合薄膜转移到所述EVA薄膜表面。
  3. 根据权利要求2所述的铜铟镓硒太阳能电池组件的制作方法，所述将所述石墨烯基复合薄膜转移到所述EVA薄膜表面包括：
    采用热压印转移的方式将所述石墨烯基复合薄膜转移到所述EVA薄膜表面。
  4. 根据权利要求2所述的铜铟镓硒太阳能电池组件的制作方法，其中，在将所述石墨烯基复合薄膜转移到所述EVA薄膜表面之前，所述方法还包括：
    喷涂或旋涂纳米线网络结构到石墨烯薄膜上，合成所述石墨烯基复合薄膜。
  5. 根据权利要求4所述的铜铟镓硒太阳能电池组件的制作方法，其中，所述石墨烯薄膜包括单层或少层石墨烯薄膜，所述石墨烯薄膜的厚度大于0且小于等于1nm。
  6. 根据权利要求1至5中任一项所述的铜铟镓硒太阳能电池组件的制作方法，其中，所述石墨烯基复合薄膜的厚度大于0且小于等于200nm。
  7. 根据权利要求1所述的铜铟镓硒太阳能电池组件的制作方法，其中，在基板上依次形成钼层镀膜、铜铟镓硒薄膜、硫化镉薄膜和本征氧化锌薄膜之后且在利用带有石墨烯复合薄膜的EVA薄膜封装所述钼层镀膜、铜铟镓硒 薄膜、硫化镉薄膜和本征氧化锌薄膜之前，所述方法还包括：
    沉积氧化锌铝(AZO)到所述本征氧化锌薄膜以形成AZO层。
  8. 根据权利要求7所述的铜铟镓硒太阳能电池组件的制作方法，其中，利用带有石墨烯复合薄膜的EVA薄膜封装所述钼层镀膜、铜铟镓硒薄膜、硫化镉薄膜和本征氧化锌薄膜包括：
    利用带有石墨烯复合薄膜的EVA薄膜封装所述钼层镀膜、铜铟镓硒薄膜、硫化镉薄膜、本征氧化锌薄膜和AZO层。
  9. 根据权利要求7或8所述的铜铟镓硒太阳能电池组件的制作方法，其中，所述AZO层的厚度为20nm～400nm。
  10. 根据权利要求1所述的铜铟镓硒太阳能电池组件的制作方法，其中，所述在基板上依次形成钼层镀膜、铜铟镓硒薄膜、硫化镉薄膜和本征氧化锌薄膜，包括：
    沉积钼到所述基板上，形成所述钼层镀膜；
    沉积铜、铟、镓、硒到所述钼层镀膜，形成所述铜铟镓硒薄膜；
    沉积硫化镉到所述铜铟镓硒薄膜，形成所述硫化镉薄膜；
    沉积本征氧化锌到所述硫化镉薄膜，形成所述本征氧化锌薄膜。
  11. 一种铜铟镓硒太阳能电池组件，包括：
    基板；
    背电极，设置在所述基板上；
    光吸收层，设置在所述背电极上；
    缓冲层，设置在所述光吸收层上；
    窗口层，设置在所述缓冲层上；
    其中，所述窗口层包括高阻层和透明导电层，所述透明导电层包括设置在所述高阻层上的石墨烯基复合薄膜。
  12. 根据权利要求11所述的铜铟镓硒太阳能电池组件，其中，所述石墨烯基复合薄膜的厚度大于0且小于等于200nm。
  13. 根据权利要求11所述的铜铟镓硒太阳能电池组件，其中，所述石墨烯基复合薄膜包括：
    石墨烯薄膜；以及
    纳米线，设置在石墨烯薄膜上。
  14. 根据权利要求13所述的铜铟镓硒太阳能电池组件，其中，所述石墨烯薄膜包括单层或少层石墨烯薄膜，所述石墨烯薄膜的厚度为大于0且小于等于1nm。
  15. 根据权利要求11所述的铜铟镓硒太阳能电池组件，其中，所述透明导电层还包括AZO层，AZO层的厚度是20nm～400nm。
  16. 根据权利要求12所述的铜铟镓硒太阳能电池组件，其中，所述纳米线设置在远离所述高阻层的一面。
  17. 根据权利要求11所述的铜铟镓硒太阳能电池组件，还包括：封装所述背电极、光吸收层、缓冲层和窗口层的EVA层，以及设置在所述EVA层上的玻璃层。
  18. 根据权利要求13所述铜铟镓硒太阳能电池组件，还包括：
    所述纳米线包括至少一种金属纳米线和/或非金属纳米线。
  19. 根据权利要求18所述的铜铟镓太阳能电池组件，所述非金属纳米线包括碳纳米管。
  20. 一种铜铟镓硒太阳能电池组件的制作方法，包括：
    在基板上依次形成钼层镀膜、铜铟镓硒薄膜、硫化镉薄膜和本征氧化锌薄膜；
    将石墨烯基复合薄膜转移到包括形成有钼层镀膜、铜铟镓硒薄膜、硫化镉薄膜和本征氧化锌薄膜的所述基板上；
    制备EVA薄膜封装所述钼层镀膜、铜铟镓硒薄膜、硫化镉薄膜、本征氧化锌薄膜、石墨烯基复合薄膜；
    其中，所述石墨烯基复合薄膜包括石墨烯薄膜和设置在所述石墨烯薄膜上的纳米线。
  21. 根据权利要求20所述的铜铟镓硒太阳能电池组件的制作方法，所述将所述石墨烯基复合薄膜转移到所述EVA薄膜表面包括：
    采用热压印转移的方式将所述石墨烯基复合薄膜转移到所述包括形成有钼层镀膜、铜铟镓硒薄膜、硫化镉薄膜和本征氧化锌薄膜的基板上。
  22. 根据权利要求20所述的铜铟镓硒太阳能电池组件的制作方法，所述 将所述石墨烯基复合薄膜转移到所述EVA薄膜表面包括：
    采用溶液辅助转移的方式将所述石墨烯基复合薄膜转移到所述包括形成有钼层镀膜、铜铟镓硒薄膜、硫化镉薄膜和本征氧化锌薄膜的基板上。
PCT/CN2018/106071 2018-04-28 2018-09-18 铜铟镓硒太阳能电池组件的制作方法及铜铟镓硒太阳能电池组件 WO2019205458A1 (zh)

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CN105870214A (zh) * 2016-04-14 2016-08-17 董友强 一种铜铟镓硒薄膜太阳电池
CN106206948A (zh) * 2015-05-04 2016-12-07 东莞日阵薄膜光伏技术有限公司 新型pn型钙钛矿/铜铟镓硒双结薄膜电池制备方法

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CN106206948A (zh) * 2015-05-04 2016-12-07 东莞日阵薄膜光伏技术有限公司 新型pn型钙钛矿/铜铟镓硒双结薄膜电池制备方法
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