CN109494273B - 一种双面三端子碲化镉太阳电池 - Google Patents

一种双面三端子碲化镉太阳电池 Download PDF

Info

Publication number
CN109494273B
CN109494273B CN201811159856.8A CN201811159856A CN109494273B CN 109494273 B CN109494273 B CN 109494273B CN 201811159856 A CN201811159856 A CN 201811159856A CN 109494273 B CN109494273 B CN 109494273B
Authority
CN
China
Prior art keywords
cadmium
telluride
solar cell
cadmium telluride
sides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201811159856.8A
Other languages
English (en)
Other versions
CN109494273A (zh
Inventor
王文武
冯良桓
李卫
郝霞
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sichuan University
Original Assignee
Sichuan University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sichuan University filed Critical Sichuan University
Priority to CN201811159856.8A priority Critical patent/CN109494273B/zh
Publication of CN109494273A publication Critical patent/CN109494273A/zh
Application granted granted Critical
Publication of CN109494273B publication Critical patent/CN109494273B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0725—Multiple junction or tandem solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本发明属于一种利用光生伏打效应，将光能直接转变为电能的半导体器件，也称之为光伏太阳电池或太阳电池，属于新型薄膜太阳电池的结构设计和制备之技术领域。传统的碲化镉太阳电池在目前的结构下，其短路电流密度接近极限电池背面因为金属电极的存在导致光无法穿透被电池利用。要进一步提升电池的短路电流密度，一个可行的新结构是用使用硅或者锗基片作为衬底，在两面同时制备太阳电池，实现双面均可吸收利用太阳光。本发明全面考虑了半导体的电子亲和势及能隙，以及掺杂效应和可能的费米能级位置，提出了双面三端子碲化镉太阳电池的结构。本发明旨在基片两侧同时制备碲化镉太阳电池，可以快速制备出更高短路电流密度的太阳电池。

Description

一种双面三端子碲化镉太阳电池
技术领域
本发明属于一种利用光生伏打效应，将光能直接转变为电能的半导体器件，也称之为光伏太阳电池或太阳电池，属于新型薄膜太阳电池的结构设计和制备之技术领域。
背景技术
碲化镉薄膜太阳电池取得了很大的进展，小面积电池的效率超过22%。在电池可吸收利用的波长范围内的光谱响应上几乎达到了极致，外量子效率已接近或者超过90%。因此在没有新的材料或者技术突破的情况下很难在继续提高电池的短路电流密度。
现在太阳电池组件通常只有单面有电池，背面因为金属电极的存在导致光无法穿透金属电极被电池利用。因此太阳电池组件在使用过程中通常只有正面入射的光才能被吸收利用。但是太阳电池组件实际应用过程中不只是正面有太阳光入射，背面同样存在大量因为散射及地面等反射带来的入射光，这部分光却无法被太阳电池吸收利用，造成能量浪费。
为了能够充分利用太阳光，我们设计可以双面利用太阳光的碲化镉太阳电池。在合适的基底上双面沉积碲化镉太阳电池，这样太阳电池组件可以充分利用太阳光，进一步提高电池的短路电流密度。
因此，一个可行的新结构是用使用硅或者锗基片作为衬底，在两面同时制备碲化镉太阳电池。碲化镉的优点是：碲化镉是直接能隙的半导体，吸收系数的很大，能隙宽度适合用于制备太阳电池。单晶硅是间接带隙半导体，吸收系数较低，但制造工艺十分成熟，可以制造出不同电阻率的p-型、n-型硅片。硅单晶的电子和空穴都有较大的漂移迁移率。用硅片作衬底制备薄膜太阳电池的突出优点是，不仅能大大降低薄膜电池制备的技术难度和设备的复杂系数，还能由此制造成新型双面太阳电池。
本发明全面考虑了这些半导体的电子亲和势及能隙，以及掺杂效应和可能的费米能级位置，提出了双面三端子碲化镉太阳电池的结构。
发明内容
我们首先提出了一种硅或者锗基片上，在其两侧分别制备碲化镉太阳电池，从而获得双面三端子碲化镉太阳电池的器件结构。使用真空蒸发法在硅或锗片上一侧制备金属电极。然后依次在两侧同时沉积钝化层、硫化镉层、碲化镉层、碲化锌层和透明电极层从而制备出双面三端子碲化镉太阳电池。这样可以两面的电池同时完成制备，可以在不增加工艺过程的前提下获得具有更高电流密度的双面三端子碲化镉太阳电池。
附图说明
图1：透明导电膜/碲化锌/碲化镉/硫化镉/钝化层/金属/硅片/硫化镉/钝化层/碲化镉/碲化锌/透明导电膜结构的太阳电池的各个层材料的费米能级及电池的能带结构示意图。
图2：透明导电膜/碲化锌/碲化镉/硫化镉/钝化层/金属/硅片/钝化层/碲化镉/碲化锌/透明导电膜结构的太阳电池的各个层材料的费米能级及电池的能带结构示意图。
图3：透明导电膜/碲化锌/碲化镉/硫化镉/钝化层/金属/硅片/钝化层/碲化镉/硒化锌/透明导电膜结构的太阳电池的各个层材料的费米能级及电池的能带结构示意图。
具体实施方式
传统的碲化镉太阳电池的制备工艺已经十分成熟，与之相比双面三端子碲化镉太阳电池各层薄膜的制备顺序有所不同，制备方法也有所差异。以透明导电膜/碲化锌/碲化镉/硫化镉（硒化镉）/钝化层/金属/硅片/钝化层/硫化镉（硒化镉）/碲化镉/碲化锌/透明导电膜结构的太阳电池为例，其制备工艺流程如下：
1、使用真空蒸发的方式在真空度为1×10-3—5×10-4条件下，在干净的硅片的一侧沉积金属电极，厚度为100纳米—500纳米；
2、使用溅射镀膜的方式在金属测和硅片另一侧同时沉积钝化层，其厚度为：30纳米—200纳米；
3、使用化学水浴法或者溅射镀膜方法在在两侧的钝化层上沉积一层硫化镉层，厚度为：20纳米—150纳米；或者使用溅射方式在两侧的钝化层上制备硒化镉薄膜或者硫化镉和硒化镉复合层；
4、使用电沉积或者溅射方式在两侧同时制备碲化镉薄膜，厚度为2微米—5微米。然后在氯化镉气氛下，360℃—400℃温度下，退火30分钟—40分钟；
5、对退火后碲化镉薄膜进行化学腐蚀后，使用真空蒸发或者溅射镀膜方式在两侧碲化镉薄膜上同时制备碲化锌薄膜，其厚度为：50纳米—200纳米。然后在200℃—300℃条件下进行退火处理；
6、在两侧碲化锌薄膜的基础上，采用溅射镀膜方式，同时制备电阻率为0.1 Ω·cm-20Ω·cm的透明导电膜作为电池电极。即可获得双面三端子碲化镉太阳电池。
以透明导电膜/碲化锌/碲化镉/硫化镉（硒化镉）/钝化层/金属/锗片/钝化层/硫化镉（硒化镉）/碲化镉/碲化锌/透明导电膜结构的太阳电池为例，其制备工艺流程如下：
1、使用真空蒸发的方式在真空度为1×10-3—5×10-4条件下，在干净的硅片的一侧沉积金属电极，厚度为100纳米—500纳米；
2、使用溅射镀膜的方式在金属测和硅片另一侧同时沉积钝化层，其厚度为：30纳米—200纳米；
3、使用化学水浴法或者溅射镀膜方法在在两侧的钝化层上沉积一层硫化镉层，厚度为：20纳米—150纳米；或者使用溅射方式在两侧的钝化层上制备硒化镉薄膜或者硫化镉和硒化镉复合层；
4、使用电沉积或者溅射方式在两侧同时制备碲化镉薄膜，厚度为2微米—5微米。然后在氯化镉气氛下，360℃—400℃温度下，退火30分钟—40分钟；
5、对退火后碲化镉薄膜进行化学腐蚀后，使用真空蒸发或者溅射镀膜方式在两侧碲化镉薄膜上同时制备碲化锌薄膜，其厚度为：50纳米—200纳米。然后在200℃—300℃条件下进行退火处理；
6、在两侧碲化锌薄膜的基础上，采用溅射镀膜方式，同时制备电阻率为0.1 Ω·cm-20Ω·cm的透明导电膜作为电池电极。即可获得双面三端子碲化镉太阳电池。

Claims (5)

1.一种双面三端子碲化镉太阳电池,其双面都能接受入射光并具有三个外电极，其特征在于包括以下结构：是在一片自支撑的半导体基片的一侧沉积一种金属作为基极，再在金属电极侧和半导体基片侧分别依次制备钝化层、硫化镉或者硒化镉或者硒化镉和硫化镉薄复合膜、碲化镉薄膜、碲化锌薄膜或者硒化锌薄膜或者碲化铜薄膜，于是两边各自构成异质结，然后在半导体薄膜的外侧沉积金属膜或透明导电膜而成为两个独立的电极，在半导体基片的两侧各自形成碲化镉异质结太阳电池，光从两面入射到碲化镉太阳电池；
具体的，在所述半导体基片晶体硅片或晶体锗片的外侧及所述金属电极侧同时沉积硫化镉或者硒化镉或者硒化镉和硫化镉薄复合膜，其厚度为20纳米—150纳米；
在基片两侧的硫化镉或者硒化镉或者硒化镉和硫化镉薄复合膜层上同时沉积碲化镉薄膜，其厚度为：2微米—5微米；
在基片两侧的碲化隔层上同时沉积碲化锌或者硒化锌或者碲化铜薄膜，其厚度为：50纳米—200纳米。
2.根据权利要求1所述的双面三端子碲化镉太阳电池，其特征是使用硅片或者锗片作为基片，所述硅片或者锗片厚度为50-500微米，电阻率为0.01 Ω·cm—100 Ω·cm。
3.根据权利要求1所述的双面三端子碲化镉太阳电池，其特征是以晶体硅片或以晶体锗片作为自支撑的半导体基片，相应的基极金属是金、银、铝、铍、铜、铬、钼、镍，或它们中的两种至多种金属先后沉积而成的复合电极。
4.根据权利要求1所述的双面三端子碲化镉太阳电池，其特征是在基极金属膜上，在沉积半导体层硫化镉之前先沉积一层钝化层（HRT），钝化层包括SnO2, ZnMgO，CdSnO4或ZnSnO4简并半导体，其厚度为：30纳米—200纳米。
5.根据权利要求1所述的双面三端子碲化镉太阳电池，其特征是半导体基片外侧的硫化镉可以被一种钝化层代替，这钝化层包括SnO2, ZnMgO，CdSnO4,或ZnSnO4简并半导体。
CN201811159856.8A 2018-09-30 2018-09-30 一种双面三端子碲化镉太阳电池 Active CN109494273B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811159856.8A CN109494273B (zh) 2018-09-30 2018-09-30 一种双面三端子碲化镉太阳电池

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201811159856.8A CN109494273B (zh) 2018-09-30 2018-09-30 一种双面三端子碲化镉太阳电池

Publications (2)

Publication Number Publication Date
CN109494273A CN109494273A (zh) 2019-03-19
CN109494273B true CN109494273B (zh) 2020-05-22

Family

ID=65690804

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811159856.8A Active CN109494273B (zh) 2018-09-30 2018-09-30 一种双面三端子碲化镉太阳电池

Country Status (1)

Country Link
CN (1) CN109494273B (zh)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1120246A (zh) * 1995-07-20 1996-04-10 四川联合大学 具有过渡层的碲化镉太阳电池
CN1474461A (zh) * 2002-06-19 2004-02-11 ������������ʽ���� 发电系统和发电装置
CN102117865A (zh) * 2009-12-31 2011-07-06 杜邦太阳能有限公司 三端子太阳能电池阵列的制造方法
CN102148232A (zh) * 2010-12-24 2011-08-10 友达光电股份有限公司 太阳能电池模块
CN102201480A (zh) * 2011-05-13 2011-09-28 苏州阿特斯阳光电力科技有限公司 基于n型硅片的碲化镉半导体薄膜异质结太阳电池
CN102356476A (zh) * 2009-03-16 2012-02-15 思阳公司 串联光伏电池及使用三个玻璃基板构造的方法
CN105826475A (zh) * 2016-05-27 2016-08-03 重庆文理学院 一种双面有机光伏电池及其制备方法
CN108493296A (zh) * 2018-03-20 2018-09-04 暨南大学 一种柔性CdTe薄膜太阳电池及其制备方法和应用

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050056312A1 (en) * 2003-03-14 2005-03-17 Young David L. Bifacial structure for tandem solar cells

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1120246A (zh) * 1995-07-20 1996-04-10 四川联合大学 具有过渡层的碲化镉太阳电池
CN1474461A (zh) * 2002-06-19 2004-02-11 ������������ʽ���� 发电系统和发电装置
CN102356476A (zh) * 2009-03-16 2012-02-15 思阳公司 串联光伏电池及使用三个玻璃基板构造的方法
CN102117865A (zh) * 2009-12-31 2011-07-06 杜邦太阳能有限公司 三端子太阳能电池阵列的制造方法
CN102148232A (zh) * 2010-12-24 2011-08-10 友达光电股份有限公司 太阳能电池模块
CN102201480A (zh) * 2011-05-13 2011-09-28 苏州阿特斯阳光电力科技有限公司 基于n型硅片的碲化镉半导体薄膜异质结太阳电池
CN105826475A (zh) * 2016-05-27 2016-08-03 重庆文理学院 一种双面有机光伏电池及其制备方法
CN108493296A (zh) * 2018-03-20 2018-09-04 暨南大学 一种柔性CdTe薄膜太阳电池及其制备方法和应用

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Optoelectronic properties n:CdS:In/p-Si heterojunction;Salwan K. J. Al-Ani，Raid A. Ismail 等;《J Mater Sci: Mater Electron》;20061031;第17卷;819-820页，experimental部分 *

Also Published As

Publication number Publication date
CN109494273A (zh) 2019-03-19

Similar Documents

Publication Publication Date Title
US4595790A (en) Method of making current collector grid and materials therefor
KR20110107760A (ko) 박막 광기전 전지
JP2013507766A (ja) 太陽光発電装置及びその製造方法
US20130152999A1 (en) Photovoltaic component for use under concentrated solar flux
US9691927B2 (en) Solar cell apparatus and method of fabricating the same
JP2012532442A (ja) 太陽電池及びその製造方法
US4595791A (en) Thin-film photovoltaic devices incorporating current collector grid and method of making
KR20120113130A (ko) 태양전지 및 이의 제조방법
CN109494273B (zh) 一种双面三端子碲化镉太阳电池
Jarkov et al. Conductive polymer PEDOT: PSS back contact for CdTe solar cell
CN109545881B (zh) 一种基于单晶硅片衬底的CdS/CdTe太阳电池
KR20140058794A (ko) 박막형 태양전지 및 그 제조방법
CN207925499U (zh) 一种Cu2ZnSn(S,Se)4薄膜太阳能电池
CN109545869A (zh) 一种双面三端子的柔性碲化镉太阳电池
KR101327010B1 (ko) 태양전지 및 이의 제조방법
KR101305603B1 (ko) 태양전지 및 이의 제조방법
KR101846337B1 (ko) 태양전지 및 이의 제조방법
CN109473503B (zh) 一种宽光谱CdTe/Si化合物异质结太阳电池
KR101327099B1 (ko) 태양전지 모듈 및 이의 제조방법
KR20110001820A (ko) 태양전지 및 이의 제조방법
WO2019205458A1 (zh) 铜铟镓硒太阳能电池组件的制作方法及铜铟镓硒太阳能电池组件
Caselli et al. CdSe nanowire solar cells
KR101372026B1 (ko) 태양전지 및 이의 제조방법
KR101349417B1 (ko) 태양전지 및 이의 제조방법
KR101382943B1 (ko) 태양전지 및 이의 제조방법

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant