CN109494273B - 一种双面三端子碲化镉太阳电池 - Google Patents

一种双面三端子碲化镉太阳电池 Download PDF

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CN109494273B
CN109494273B CN201811159856.8A CN201811159856A CN109494273B CN 109494273 B CN109494273 B CN 109494273B CN 201811159856 A CN201811159856 A CN 201811159856A CN 109494273 B CN109494273 B CN 109494273B
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王文武
冯良桓
李卫
郝霞
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Abstract

本发明属于一种利用光生伏打效应，将光能直接转变为电能的半导体器件，也称之为光伏太阳电池或太阳电池，属于新型薄膜太阳电池的结构设计和制备之技术领域。传统的碲化镉太阳电池在目前的结构下，其短路电流密度接近极限电池背面因为金属电极的存在导致光无法穿透被电池利用。要进一步提升电池的短路电流密度，一个可行的新结构是用使用硅或者锗基片作为衬底，在两面同时制备太阳电池，实现双面均可吸收利用太阳光。本发明全面考虑了半导体的电子亲和势及能隙，以及掺杂效应和可能的费米能级位置，提出了双面三端子碲化镉太阳电池的结构。本发明旨在基片两侧同时制备碲化镉太阳电池，可以快速制备出更高短路电流密度的太阳电池。

Description

一种双面三端子碲化镉太阳电池
技术领域
本发明属于一种利用光生伏打效应，将光能直接转变为电能的半导体器件，也称之为光伏太阳电池或太阳电池，属于新型薄膜太阳电池的结构设计和制备之技术领域。
背景技术
碲化镉薄膜太阳电池取得了很大的进展，小面积电池的效率超过22%。在电池可吸收利用的波长范围内的光谱响应上几乎达到了极致，外量子效率已接近或者超过90%。因此在没有新的材料或者技术突破的情况下很难在继续提高电池的短路电流密度。
现在太阳电池组件通常只有单面有电池，背面因为金属电极的存在导致光无法穿透金属电极被电池利用。因此太阳电池组件在使用过程中通常只有正面入射的光才能被吸收利用。但是太阳电池组件实际应用过程中不只是正面有太阳光入射，背面同样存在大量因为散射及地面等反射带来的入射光，这部分光却无法被太阳电池吸收利用，造成能量浪费。
为了能够充分利用太阳光，我们设计可以双面利用太阳光的碲化镉太阳电池。在合适的基底上双面沉积碲化镉太阳电池，这样太阳电池组件可以充分利用太阳光，进一步提高电池的短路电流密度。
因此，一个可行的新结构是用使用硅或者锗基片作为衬底，在两面同时制备碲化镉太阳电池。碲化镉的优点是：碲化镉是直接能隙的半导体，吸收系数的很大，能隙宽度适合用于制备太阳电池。单晶硅是间接带隙半导体，吸收系数较低，但制造工艺十分成熟，可以制造出不同电阻率的p-型、n-型硅片。硅单晶的电子和空穴都有较大的漂移迁移率。用硅片作衬底制备薄膜太阳电池的突出优点是，不仅能大大降低薄膜电池制备的技术难度和设备的复杂系数，还能由此制造成新型双面太阳电池。
本发明全面考虑了这些半导体的电子亲和势及能隙，以及掺杂效应和可能的费米能级位置，提出了双面三端子碲化镉太阳电池的结构。
发明内容
我们首先提出了一种硅或者锗基片上，在其两侧分别制备碲化镉太阳电池，从而获得双面三端子碲化镉太阳电池的器件结构。使用真空蒸发法在硅或锗片上一侧制备金属电极。然后依次在两侧同时沉积钝化层、硫化镉层、碲化镉层、碲化锌层和透明电极层从而制备出双面三端子碲化镉太阳电池。这样可以两面的电池同时完成制备，可以在不增加工艺过程的前提下获得具有更高电流密度的双面三端子碲化镉太阳电池。
附图说明
图1：透明导电膜/碲化锌/碲化镉/硫化镉/钝化层/金属/硅片/硫化镉/钝化层/碲化镉/碲化锌/透明导电膜结构的太阳电池的各个层材料的费米能级及电池的能带结构示意图。
图2：透明导电膜/碲化锌/碲化镉/硫化镉/钝化层/金属/硅片/钝化层/碲化镉/碲化锌/透明导电膜结构的太阳电池的各个层材料的费米能级及电池的能带结构示意图。
图3：透明导电膜/碲化锌/碲化镉/硫化镉/钝化层/金属/硅片/钝化层/碲化镉/硒化锌/透明导电膜结构的太阳电池的各个层材料的费米能级及电池的能带结构示意图。
具体实施方式
传统的碲化镉太阳电池的制备工艺已经十分成熟，与之相比双面三端子碲化镉太阳电池各层薄膜的制备顺序有所不同，制备方法也有所差异。以透明导电膜/碲化锌/碲化镉/硫化镉（硒化镉）/钝化层/金属/硅片/钝化层/硫化镉（硒化镉）/碲化镉/碲化锌/透明导电膜结构的太阳电池为例，其制备工艺流程如下：
1、使用真空蒸发的方式在真空度为1×10-3—5×10-4条件下，在干净的硅片的一侧沉积金属电极，厚度为100纳米—500纳米；
2、使用溅射镀膜的方式在金属测和硅片另一侧同时沉积钝化层，其厚度为：30纳米—200纳米；
3、使用化学水浴法或者溅射镀膜方法在在两侧的钝化层上沉积一层硫化镉层，厚度为：20纳米—150纳米；或者使用溅射方式在两侧的钝化层上制备硒化镉薄膜或者硫化镉和硒化镉复合层；
4、使用电沉积或者溅射方式在两侧同时制备碲化镉薄膜，厚度为2微米—5微米。然后在氯化镉气氛下，360℃—400℃温度下，退火30分钟—40分钟；
5、对退火后碲化镉薄膜进行化学腐蚀后，使用真空蒸发或者溅射镀膜方式在两侧碲化镉薄膜上同时制备碲化锌薄膜，其厚度为：50纳米—200纳米。然后在200℃—300℃条件下进行退火处理；
6、在两侧碲化锌薄膜的基础上，采用溅射镀膜方式，同时制备电阻率为0.1 Ω·cm-20Ω·cm的透明导电膜作为电池电极。即可获得双面三端子碲化镉太阳电池。
以透明导电膜/碲化锌/碲化镉/硫化镉（硒化镉）/钝化层/金属/锗片/钝化层/硫化镉（硒化镉）/碲化镉/碲化锌/透明导电膜结构的太阳电池为例，其制备工艺流程如下：
1、使用真空蒸发的方式在真空度为1×10-3—5×10-4条件下，在干净的硅片的一侧沉积金属电极，厚度为100纳米—500纳米；
2、使用溅射镀膜的方式在金属测和硅片另一侧同时沉积钝化层，其厚度为：30纳米—200纳米；
3、使用化学水浴法或者溅射镀膜方法在在两侧的钝化层上沉积一层硫化镉层，厚度为：20纳米—150纳米；或者使用溅射方式在两侧的钝化层上制备硒化镉薄膜或者硫化镉和硒化镉复合层；
4、使用电沉积或者溅射方式在两侧同时制备碲化镉薄膜，厚度为2微米—5微米。然后在氯化镉气氛下，360℃—400℃温度下，退火30分钟—40分钟；
5、对退火后碲化镉薄膜进行化学腐蚀后，使用真空蒸发或者溅射镀膜方式在两侧碲化镉薄膜上同时制备碲化锌薄膜，其厚度为：50纳米—200纳米。然后在200℃—300℃条件下进行退火处理；
6、在两侧碲化锌薄膜的基础上，采用溅射镀膜方式，同时制备电阻率为0.1 Ω·cm-20Ω·cm的透明导电膜作为电池电极。即可获得双面三端子碲化镉太阳电池。

Claims (5)

1.一种双面三端子碲化镉太阳电池,其双面都能接受入射光并具有三个外电极，其特征在于包括以下结构：是在一片自支撑的半导体基片的一侧沉积一种金属作为基极，再在金属电极侧和半导体基片侧分别依次制备钝化层、硫化镉或者硒化镉或者硒化镉和硫化镉薄复合膜、碲化镉薄膜、碲化锌薄膜或者硒化锌薄膜或者碲化铜薄膜，于是两边各自构成异质结，然后在半导体薄膜的外侧沉积金属膜或透明导电膜而成为两个独立的电极，在半导体基片的两侧各自形成碲化镉异质结太阳电池，光从两面入射到碲化镉太阳电池；
具体的，在所述半导体基片晶体硅片或晶体锗片的外侧及所述金属电极侧同时沉积硫化镉或者硒化镉或者硒化镉和硫化镉薄复合膜，其厚度为20纳米—150纳米；
在基片两侧的硫化镉或者硒化镉或者硒化镉和硫化镉薄复合膜层上同时沉积碲化镉薄膜，其厚度为：2微米—5微米；
在基片两侧的碲化隔层上同时沉积碲化锌或者硒化锌或者碲化铜薄膜，其厚度为：50纳米—200纳米。
2.根据权利要求1所述的双面三端子碲化镉太阳电池，其特征是使用硅片或者锗片作为基片，所述硅片或者锗片厚度为50-500微米，电阻率为0.01 Ω·cm—100 Ω·cm。
3.根据权利要求1所述的双面三端子碲化镉太阳电池，其特征是以晶体硅片或以晶体锗片作为自支撑的半导体基片，相应的基极金属是金、银、铝、铍、铜、铬、钼、镍，或它们中的两种至多种金属先后沉积而成的复合电极。
4.根据权利要求1所述的双面三端子碲化镉太阳电池，其特征是在基极金属膜上，在沉积半导体层硫化镉之前先沉积一层钝化层（HRT），钝化层包括SnO2, ZnMgO，CdSnO4或ZnSnO4简并半导体，其厚度为：30纳米—200纳米。
5.根据权利要求1所述的双面三端子碲化镉太阳电池，其特征是半导体基片外侧的硫化镉可以被一种钝化层代替，这钝化层包括SnO2, ZnMgO，CdSnO4,或ZnSnO4简并半导体。
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