CN109545869A - 一种双面三端子的柔性碲化镉太阳电池 - Google Patents

一种双面三端子的柔性碲化镉太阳电池 Download PDF

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CN109545869A
CN109545869A CN201811241798.3A CN201811241798A CN109545869A CN 109545869 A CN109545869 A CN 109545869A CN 201811241798 A CN201811241798 A CN 201811241798A CN 109545869 A CN109545869 A CN 109545869A
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王文武
冯良桓
李卫
郝霞
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Sichuan University
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Abstract

本发明属于一种利用光生伏打效应，将光能直接转变为电能的半导体器件，属于新型薄膜太阳电池的结构设计和制备之技术领域。传统的碲化镉太阳电池使用玻璃作为衬底，易损坏且不适合一些特殊场合；电池的短路电流密度接近极限。其电池组件单面有电池，背面的光无法穿透金属电极被电池利用。要制备有更高的短路电流密度太阳电池，一个可行的新结构是在金属薄片两面同时制备太阳电池，实现双面均可吸收利用太阳光。本发明全面考虑了半导体材料的性质，提出了双面三端子的柔性碲化镉太阳电池的结构。本发明在金属薄片两侧的碲化镉太阳电池可以同时完成制备工艺，这样可以快速制备出具备更高短路电流密度的柔性碲化镉太阳电池。

Description

一种双面三端子的柔性碲化镉太阳电池
技术领域
本发明属于一种利用光生伏打效应，将光能直接转变为电能的半导体器件，也称之为光伏太阳电池或太阳电池，属于新型薄膜太阳电池的结构设计和制备之技术领域。
背景技术
碲化镉薄膜太阳电池取得了很大的进展，小面积电池的效率超过22%。在电池可吸收利用的波长范围内的光谱响应上几乎达到了极致，外量子效率已接近或者超过90%。因此在没有新的材料或者技术突破的情况下很难在继续提高电池的短路电流密度。
现在碲化镉太阳电池通常制备在玻璃衬底上，玻璃衬底制备碲化镉太阳电池有其独有的优势。但是同样的玻璃衬底缺乏韧性，电池组件不能弯折，不适合一些特殊情况下应用，同时玻璃比较容易碎裂，电池组件不易搬运。
现在太阳电池组件通常只有单面有电池，背面因为金属电极的存在导致光无法穿透金属电极被电池利用。因此太阳电池组件在使用过程中通常只有正面入射的光才能被吸收利用。但是太阳电池组件实际应用过程中不只是正面有太阳光入射，背面同样存在大量因为散射及地面等反射带来的入射光，这部分光却无法被太阳电池吸收利用，造成能量浪费。
为了能够充分利用太阳光，我们设计可以双面利用太阳光的碲化镉太阳电池。在合适的柔性基底上双面沉积碲化镉太阳电池，这样太阳电池组件可以充分利用太阳光，进一步提高电池的短路电流密度，又同时能够让其适用于特殊场合。
因此，一个可行的新结构是用使用金属薄片作为衬底，在两面同时制备碲化镉太阳电池。碲化镉的优点是：碲化镉是直接能隙的半导体，吸收系数的很大，能隙宽度适合用于制备太阳电池。用金属薄片作衬底制备薄膜太阳电池的突出优点是，不仅能大大降低薄膜电池制备的技术难度和设备的复杂系数，还能由此制造成新型双面太阳电池。
本发明全面考虑了这些半导体的电子亲和势及能隙，以及掺杂效应和可能的费米能级位置，提出了双面三端子碲化镉太阳电池的结构。
发明内容
我们首先提出了一种金属薄片上，在其两侧分别制备碲化镉太阳电池，从而获得双面三端子的柔性碲化镉太阳电池的器件结构。依次在金属薄片的两侧同时沉积钝化层、硫化镉层、碲化镉层、碲化锌层和透明电极层从而制备出双面三端子碲化镉太阳电池。这样可以两面的电池同时完成制备，可以在不大量增加工艺流程的前提下获得具有更高电流密度的双面三端子柔性碲化镉太阳电池。
附图说明
图1 一种双面柔性碲化镉太阳电池的能带结构示意图。
具体实施方式
传统的碲化镉太阳电池的制备工艺已经十分成熟，与之相比双面三端子柔性碲化镉太阳电池各层薄膜的制备顺序有所不同，制备方法也有所差异。以透明导电膜/碲化锌/碲化镉/硫化镉（硒化镉）/钝化层/金属薄片/钝化层/硫化镉（硒化镉）/碲化镉/碲化锌/透明导电膜结构的太阳电池为例，其制备工艺流程如下：
1、对金属薄片双面进行抛光处理，使其粗糙度达到电池制备要求；然后进行清洗，去除表面的油污及灰尘等；
2、使用溅射镀膜的方式在金属薄片的两侧同时沉积钝化层，其厚度为：30纳米—200纳米，
3、使用化学水浴法或者溅射镀膜方法在在金属薄片两侧的钝化层上沉积一层硫化镉层，厚度为：20纳米—150纳米；或者使用溅射方式在两侧的钝化层上制备硒化镉薄膜或者硫化镉和硒化镉复合层，
4、使用电沉积或者溅射方式在两侧同时制备碲化镉薄膜，厚度为2微米—5微米。然后在氯化镉气氛下，360℃—400℃温度下，退火30分钟—40分钟，
5、对退火后碲化镉薄膜进行化学腐蚀后，使用真空蒸发或者溅射镀膜方式在两侧碲化镉薄膜上同时制备碲化锌薄膜，其厚度为：50纳米—200纳米。然后在200℃—300℃条件下进行退火处理，
6、在两侧碲化锌薄膜的基础上，采用溅射镀膜方式，同时制备电阻率为0.1 Ω·cm-20Ω·cm的透明导电膜作为电池电极。即可获得双面三端子的柔性碲化镉太阳电池。

Claims (8)

1.一种双面都能接受入射光并具有三个外电极的柔性碲化镉太阳电池，即双面三端子的柔性碲化镉太阳电池，其特征是在一片可以自支撑的柔性金属片作为基极，再在金属基片侧分别制备硫化镉、碲化镉等薄膜且各自构成异质结，再在半导体薄膜的外侧沉积金属栅线或透明导电膜而成为两个独立的电极。
2.权利要求1所述的双面三端子的柔性碲化镉太阳电池，其特征是使用柔性金属片作为基片，上述特征中的金属片，其厚度为10-1000微米，粗糙度（Rq）小于500nm，体电阻率为0.001 mΩ·cm—1m Ω·cm，例如可以是铝片，铜片，镍片钛片、铍片或者钼片以及满足上述要求的合金片，如不锈钢片。
3.权利要求1所述的双面三端子的柔性碲化镉太阳电池，其特征是在柔性金属基片的外侧先后沉积硫化镉、碲化镉、碲化锌从而在两侧各自形成碲化镉异质结太阳电池。
4.权利要求3所述的双面三端子的柔性碲化镉太阳电池，其特征是在柔性金属基片上，可以在沉积半导体层硫化镉之前先沉积一层钝化层（HRT），钝化层可以是SnO2, ZnMgO，CdSnO4, ZnSnO4等简并半导体，其厚度为：10纳米—200纳米。
5.权利要求3所述的双面三端子的柔性碲化镉太阳电池，其特征是在柔性金属基片的两侧同时沉积硫化镉薄膜，其厚度为20纳米—150纳米，上述特征中的硫化镉薄膜可以被硒化镉或者硒化镉和硫化镉复合层代替。
6.权利要求3所述的双面三端子的柔性碲化镉太阳电池，其特征是在柔性金属基片两侧的硫化镉层上同时沉积碲化镉薄膜，其厚度为：0.5微米—5微米。
7.权利要求3所述的双面三端子的柔性碲化镉太阳电池，其特征是在柔性金属基片的两侧碲化镉薄膜上沉积p-碲化锌薄膜，其厚度为：50纳米—200纳米，上述特征中的p-碲化锌可以被p-硒化锌或者碲化铜替代。
8.权利要求5所述的双面三端子的柔性碲化镉太阳电池，其特征是柔性金属基片外侧的硫化镉可以被一种钝化层代替，这钝化层可以是SnO2, ZnMgO，CdSnO4, ZnSnO4等简并半导体。
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CN114765200A (zh) * 2021-01-12 2022-07-19 四川大学 一种单基底四端级联钙钛矿-碲化镉叠层太阳电池

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070272296A1 (en) * 2003-06-12 2007-11-29 Christoph Brabec Tandem Solar Cell with a Shared Organic Electrode
CN101179109A (zh) * 2007-12-17 2008-05-14 中国科学院长春应用化学研究所 采用三层有机异质结薄膜作为中间电极的叠层有机光伏电池
CN101697361A (zh) * 2009-10-29 2010-04-21 润峰电力有限公司 一种碲化镉薄膜太阳能电池及其制备方法
US20100180935A1 (en) * 2009-01-21 2010-07-22 Yung-Tin Chen Multiple band gapped cadmium telluride photovoltaic devices and process for making the same
CN101834275A (zh) * 2010-05-27 2010-09-15 天津大学 用于倒置叠层有机太阳能电池中的中间电极层及制备方法
CN103465385A (zh) * 2013-09-18 2013-12-25 北京汉能创昱科技有限公司 一种柔性薄膜太阳能电池及其分片、连接与制备方法
US20140048132A1 (en) * 2011-04-26 2014-02-20 Chung-Ang University Industry-Academy Cooperation Foundation Solar cell and method of preparing the same
US20140190550A1 (en) * 2011-08-11 2014-07-10 National University Of Singapore Tandem solar cell with graphene interlayer and method of making
CN105355674A (zh) * 2015-07-20 2016-02-24 四川大学 具有石墨烯插入层的柔性碲化镉太阳电池
CN105826475A (zh) * 2016-05-27 2016-08-03 重庆文理学院 一种双面有机光伏电池及其制备方法
CN106057931A (zh) * 2016-07-05 2016-10-26 安阳师范学院 一种大开路电压纳米异质结太阳能电池及制备方法
CN106098816A (zh) * 2016-07-13 2016-11-09 盐城普兰特新能源有限公司 一种碲化镉薄膜太阳能电池及其制备方法
WO2018068720A1 (en) * 2016-10-11 2018-04-19 He Yan Materials and facbrication methods for tandem organic photovoltaic cells
CN108493264A (zh) * 2018-04-17 2018-09-04 成都中建材光电材料有限公司 一种彩色碲化镉薄膜太阳能电池及其制备方法

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070272296A1 (en) * 2003-06-12 2007-11-29 Christoph Brabec Tandem Solar Cell with a Shared Organic Electrode
CN101179109A (zh) * 2007-12-17 2008-05-14 中国科学院长春应用化学研究所 采用三层有机异质结薄膜作为中间电极的叠层有机光伏电池
US20100180935A1 (en) * 2009-01-21 2010-07-22 Yung-Tin Chen Multiple band gapped cadmium telluride photovoltaic devices and process for making the same
CN101697361A (zh) * 2009-10-29 2010-04-21 润峰电力有限公司 一种碲化镉薄膜太阳能电池及其制备方法
CN101834275A (zh) * 2010-05-27 2010-09-15 天津大学 用于倒置叠层有机太阳能电池中的中间电极层及制备方法
US20140048132A1 (en) * 2011-04-26 2014-02-20 Chung-Ang University Industry-Academy Cooperation Foundation Solar cell and method of preparing the same
US20140190550A1 (en) * 2011-08-11 2014-07-10 National University Of Singapore Tandem solar cell with graphene interlayer and method of making
CN103465385A (zh) * 2013-09-18 2013-12-25 北京汉能创昱科技有限公司 一种柔性薄膜太阳能电池及其分片、连接与制备方法
CN105355674A (zh) * 2015-07-20 2016-02-24 四川大学 具有石墨烯插入层的柔性碲化镉太阳电池
CN105826475A (zh) * 2016-05-27 2016-08-03 重庆文理学院 一种双面有机光伏电池及其制备方法
CN106057931A (zh) * 2016-07-05 2016-10-26 安阳师范学院 一种大开路电压纳米异质结太阳能电池及制备方法
CN106098816A (zh) * 2016-07-13 2016-11-09 盐城普兰特新能源有限公司 一种碲化镉薄膜太阳能电池及其制备方法
WO2018068720A1 (en) * 2016-10-11 2018-04-19 He Yan Materials and facbrication methods for tandem organic photovoltaic cells
CN108493264A (zh) * 2018-04-17 2018-09-04 成都中建材光电材料有限公司 一种彩色碲化镉薄膜太阳能电池及其制备方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114765200A (zh) * 2021-01-12 2022-07-19 四川大学 一种单基底四端级联钙钛矿-碲化镉叠层太阳电池
CN114765200B (zh) * 2021-01-12 2023-07-18 四川大学 一种单基底四端级联钙钛矿-碲化镉叠层太阳电池

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Application publication date: 20190329