WO2019205367A1 - 阵列基板和显示面板 - Google Patents

阵列基板和显示面板 Download PDF

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Publication number
WO2019205367A1
WO2019205367A1 PCT/CN2018/101919 CN2018101919W WO2019205367A1 WO 2019205367 A1 WO2019205367 A1 WO 2019205367A1 CN 2018101919 W CN2018101919 W CN 2018101919W WO 2019205367 A1 WO2019205367 A1 WO 2019205367A1
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WO
WIPO (PCT)
Prior art keywords
touch
light shielding
array substrate
region
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2018/101919
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English (en)
French (fr)
Inventor
尹伟红
梅新东
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Application filed by Wuhan China Star Optoelectronics Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Technology Co Ltd
Priority to US16/090,596 priority Critical patent/US11164896B2/en
Publication of WO2019205367A1 publication Critical patent/WO2019205367A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G06F3/04164—Connections between sensors and controllers, e.g. routing lines between electrodes and connection pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G02F1/13685—Top gates
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an array substrate and a display panel.
  • the aperture ratio of the array substrate is an important technical index for determining the display effect of the LCD, and the aperture ratio is about high, and the efficiency of light passing is higher.
  • the aperture ratio refers to the ratio between the area of the light passing portion and the entire area.
  • the touch trace and the data line can be on the same layer through a mask process. form.
  • the touch traces occupy a large portion of the open area, thereby causing the aperture ratio of the array substrate to be too low.
  • An object of the present invention is to provide an array substrate and a display panel, which improve the aperture ratio of the array substrate.
  • An embodiment of the present invention provides an array substrate, the array substrate comprising: a substrate, a light shielding layer on the substrate, an insulating layer on the light shielding layer, and a metal layer on the insulating layer.
  • the array substrate has a first region that transmits light and a second region that is opaque, and the light shielding layer, the insulating layer, and the metal layer are disposed on the second region;
  • the metal layer includes a data line and a first touch trace
  • the light shielding layer includes a second touch line, the second touch line is connected to the first touch line, and at least a portion of the second touch line is disposed adjacent to the data line. Below the portion of the first region;
  • the width of the first touch trace is less than or equal to the width of the data line; the insulating layer is provided with a through hole, and the second touch trace and the first touch trace pass through The through hole connection.
  • the light shielding layer includes a plurality of second touch lines, the second touch line array is arranged, and the through hole includes a first through hole and a second through hole, wherein the The two ends of the touch line are respectively connected to the two second touch lines that are adjacent to and adjacent to each other through the first through hole and the second through hole.
  • the light shielding layer further includes a light shielding portion, and the light shielding portion and the second touch wiring are formed by using a light mask.
  • the constituent material of the second touch trace includes one or more of molybdenum, aluminum, aluminum-nickel alloy, molybdenum-tungsten alloy, chromium, or copper.
  • a portion of the first touch trace is adjacent to the first region, and a remaining portion of the first touch trace is away from the first region, or the first touch trace All away from the first area.
  • An embodiment of the present invention further provides an array substrate, the array substrate comprising a substrate, a light shielding layer on the substrate, an insulating layer on the light shielding layer, and a metal layer on the insulating layer.
  • the array substrate has a first region that transmits light and a second region that is opaque, and the light shielding layer, the insulating layer, and the metal layer are disposed on the second region;
  • the metal layer includes a data line and a first touch trace
  • the light shielding layer includes a second touch line, the second touch line is connected to the first touch line, and at least a portion of the second touch line is disposed adjacent to the data line. Below the portion of the first region.
  • the width of the first touch trace is less than or equal to the width of the data line.
  • the insulating layer is provided with a through hole, and the second touch line is connected to the first touch line through the through hole.
  • the light shielding layer includes a plurality of second touch lines, the second touch line array is arranged, and the through hole includes a first through hole and a second through hole, wherein the The two ends of the touch line are respectively connected to the two second touch lines that are adjacent to and adjacent to each other through the first through hole and the second through hole.
  • the light shielding layer further includes a light shielding portion, and the light shielding portion and the second touch wiring are formed by using a light mask.
  • the constituent material of the second touch trace includes one or more of molybdenum, aluminum, aluminum-nickel alloy, molybdenum-tungsten alloy, chromium, or copper.
  • a portion of the first touch trace is adjacent to the first region, and a remaining portion of the first touch trace is away from the first region, or the first touch trace All away from the first area.
  • the embodiment of the present invention further provides a display panel, the display panel includes an array substrate, the array substrate includes a substrate, a light shielding layer on the substrate, an insulating layer over the light shielding layer, and the insulation layer a metal layer above the layer, the array substrate has a first region that transmits light and a second region that is opaque, the light shielding layer, the insulating layer, and the metal layer are disposed on the second region;
  • the metal layer includes a data line and a first touch trace
  • the light shielding layer includes a second touch line, the second touch line is connected to the first touch line, and at least a portion of the second touch line is disposed adjacent to the data line. Below the portion of the first region.
  • the width of the first touch trace is less than or equal to the width of the data line.
  • the insulating layer is provided with a through hole, and the second touch line is connected to the first touch line through the through hole.
  • the light shielding layer includes a plurality of second touch lines, the second touch line array is arranged, and the through hole includes a first through hole and a second through hole, wherein the The two ends of the touch line are respectively connected to the two second touch lines that are adjacent to and adjacent to each other through the first through hole and the second through hole.
  • the light shielding layer further includes a light shielding portion, and the light shielding portion and the second touch wiring are formed by using a light mask.
  • the constituent material of the second touch trace includes one or more of molybdenum, aluminum, aluminum-nickel alloy, molybdenum-tungsten alloy, chromium, or copper.
  • a portion of the first touch trace is adjacent to the first region, and a remaining portion of the first touch trace is away from the first region, or the first touch trace All away from the first area.
  • the second touch trace is formed on the light shielding layer, and at least a portion of the second touch trace is disposed under the portion of the data line adjacent to the first region, thereby improving the array.
  • the aperture ratio of the substrate is formed on the light shielding layer, and at least a portion of the second touch trace is disposed under the portion of the data line adjacent to the first region, thereby improving the array.
  • FIG. 1 is a schematic structural diagram of an array substrate according to an embodiment of the present invention.
  • FIG. 2 is another schematic structural diagram of an array substrate according to an embodiment of the present invention.
  • references to "an embodiment” herein mean that a particular feature, structure, or characteristic described in connection with the embodiments can be included in at least one embodiment of the invention.
  • the appearances of the phrases in various places in the specification are not necessarily referring to the same embodiments, and are not exclusive or alternative embodiments that are mutually exclusive. Those skilled in the art will understand and implicitly understand that the embodiments described herein can be combined with other embodiments.
  • FIG. 1 is a schematic structural diagram of an array substrate according to an embodiment of the present invention.
  • the array substrate 10 includes a substrate 11, a light shielding layer 12 on the substrate 11, an insulating layer 13 on the light shielding layer 12, and a metal layer 14 on the insulating layer 13.
  • the array substrate 10 has a first region a that transmits light and a second region b that does not transmit light.
  • components such as the light shielding layer 12, the insulating layer 13, and the metal layer 14 are sequentially disposed on the second region b.
  • the substrate 11 may be made of a flexible material or a rigid material. Specifically, the substrate 11 may be a glass substrate.
  • the metal layer 14 includes a data line 141 and a first touch trace 142.
  • the constituent materials of the data line 141 and the second touch trace 142 may include molybdenum, aluminum, aluminum-nickel alloy, and molybdenum.
  • tungsten alloy, chromium, or copper may be included in the data line 141 and the second touch line 142.
  • the data line 141 and the second touch line 142 can be made of the same material, that is, the data line 141 and the second touch line 142 can be made through a reticle.
  • the data line 141 may be partially adjacent to the first area a, and the remaining portion is away from the first area a.
  • first touch trace 142 may be partially adjacent to first region a, with the remainder being remote from first region a.
  • the first touch traces 142 may also be all away from the first area a.
  • the light shielding layer 12 includes a second touch trace 121 and a light blocking portion 122 .
  • the light shielding portion 122 is made of a light shielding material, such as a-si, a metal material, or the like.
  • the light shielding portion 122 and the second touch trace 121 may be made of the same metal material, such as one or more of molybdenum, aluminum, aluminum-nickel alloy, molybdenum-tungsten alloy, chromium, or copper, that is,
  • the second touch trace 121 and the light shielding portion 122 are formed by using a mask.
  • the second touch line 121 is at least partially disposed under the portion of the data line 141 adjacent to the first area a, so that the second touch line 121 does not occupy the space of the additional first area a, thereby improving the array substrate.
  • the width of the second touch trace 121 can be set to be less than or equal to the width of the data line 141 such that the second touch trace 121 is completely blocked by the data line 141.
  • the insulating layer 13 is for isolating the metal layer 12 and the light shielding layer 14, and the insulating layer 13 includes a multi-layer structure composed of SiNx (silicon nitride) and SiO 2 (silicon dioxide). As shown in FIG. 2 , the insulating layer 13 is provided with a through hole 131 , and the second touch trace 121 can pass through the through hole 131 and be connected to the first touch trace 142 . Specifically, a partially enlarged view of the through hole 131 shown in FIG.
  • the through hole 131 includes a first through hole 1311 and a second through hole 1312 , and the first touch wire 142 is connected to the first through hole 1311
  • the second touch line 121 above the first touch line 142 is connected to the second touch line 121 located under the second touch line through the second through hole 1312. That is, the first touch line 142 is connected to a second touch line 121 through the first through hole 1311 and the second through hole 1312.
  • the array substrate 10 further includes a doping layer 15, a first insulating layer 16, a gate wiring layer 17, a second insulating layer 18, a flat layer 19, a first electrode layer 20, and a third insulating layer. 21 and the second electrode layer 22.
  • the doped layer 15 , the first insulating layer 16 , the gate wiring layer 17 , and the second insulating layer 18 are sequentially disposed between the insulating layer 13 and the metal layer 14 .
  • the doped layer 15 includes a first doped region, a second doped region, and an active layer disposed between the first doped region and the second doped region.
  • a scanning line 171 is provided in the gate wiring layer 17, and the scanning line 171 may be made of a metal material such as Mo or Ta.
  • the flat layer 19, the first electrode layer 20, the third insulating layer 21, and the second electrode layer 22 are sequentially disposed on the metal layer 14.
  • the first electrode layer 20 and the second electrode layer 22 are both made of ITO (Indium Tin Oxide) material.
  • the second touch trace is formed on the light shielding layer, and at least a portion of the second touch trace is disposed under the portion of the data line adjacent to the first region, thereby improving the array.
  • the aperture ratio of the substrate is formed on the light shielding layer, and at least a portion of the second touch trace is disposed under the portion of the data line adjacent to the first region, thereby improving the array.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Position Input By Displaying (AREA)

Abstract

一种阵列基板（10）和显示面板，其中阵列基板（10）包括基板（11）、遮光层（12）、绝缘层（13）以及金属层（14），阵列基板（10）具有透光的第一区域和不透光的第二区域；金属层（14）包括数据线（141）和第一触控走线（142）；遮光层（12）包括第二触控走线（121），第二触控走线（121）与第一触控走线（142）连接，第二触控走线（121）的至少一部分设置在数据线（141）邻近第一区域的部分的下方。

Description

阵列基板和显示面板 技术领域
本发明涉及显示技术领域，特别是涉及一种阵列基板和显示面板。
 背景技术
在LCD（Liquid Crystal Display, 液晶显示器）的设计中，阵列基板的开口率是决定LCD显示效果的重要技术指标，开口率约高，光线的通过效率越高。其中，开口率是指光线通过部分的面积和全部面积之间的比例。
然而，光线经由背光板发射出来后，很多结构都会阻挡光线的射出，比如在In-cell显示屏中，为了减少制程数目，可以通过一道光罩制程，将触控走线和数据线在同一层形成。然而上述方法，触控走线会占据一大部分开口区的空间，从而造成阵列基板开口率过低。
 技术问题
本发明的目的在于提供一种阵列基板和显示面板，提高了阵列基板的开口率。
 技术解决方案
本发明实施例提供了一种阵列基板，所述阵列基板包括：基板、位于基板之上的遮光层、位于所述遮光层之上的绝缘层以及位于所述绝缘层之上的金属层，所述阵列基板具有透光的第一区域和不透光的第二区域，所述遮光层、所述绝缘层以及所述金属层设置在所述第二区域上；
所述金属层包括数据线和第一触控走线；
所述遮光层包括第二触控走线，所述第二触控走线与所述第一触控走线连接，所述第二触控走线的至少一部分设置在所述数据线邻近所述第一区域的部分的下方；
其中，所述第一触控走线的宽度小于或等于所述数据线的宽度；所述绝缘层设置有通孔，所述第二触控走线与所述第一触控走线通过所述通孔连接。
在一些实施例中，所述遮光层包括多条第二触控走线，所述第二触控走线阵列排布，所述通孔包括第一通孔和第二通孔，所述第一触控走线的两端，通过所述第一通孔、所述第二通孔，分别与同列并相邻的两所述第二触控走线连接。
在一些实施例中，所述遮光层还包括遮光部，所述遮光部和所述第二触控走线采用一道光罩制成。
在一些实施例中，所述第二触控走线的组成材料包括钼、铝、铝镍合金、钼钨合金、铬、或铜中的一种或多种。
在一些实施例中，所述第一触控走线的部分邻近所述第一区域，所述第一触控走线的剩余部分远离所述第一区域，或所述第一触控走线全部远离所述第一区域。
本发明实施例还提供了一种阵列基板，所述阵列基板包括基板、位于基板之上的遮光层、位于所述遮光层之上的绝缘层以及位于所述绝缘层之上的金属层，所述阵列基板具有透光的第一区域和不透光的第二区域，所述遮光层、所述绝缘层以及所述金属层设置在所述第二区域上；
所述金属层包括数据线和第一触控走线；
所述遮光层包括第二触控走线，所述第二触控走线与所述第一触控走线连接，所述第二触控走线的至少一部分设置在所述数据线邻近所述第一区域的部分的下方。
在一些实施例中，所述第一触控走线的宽度小于或等于所述数据线的宽度。
在一些实施例中，所述绝缘层设置有通孔，所述第二触控走线与所述第一触控走线通过所述通孔连接。
在一些实施例中，所述遮光层包括多条第二触控走线，所述第二触控走线阵列排布，所述通孔包括第一通孔和第二通孔，所述第一触控走线的两端，通过所述第一通孔、所述第二通孔，分别与同列并相邻的两所述第二触控走线连接。
在一些实施例中，所述遮光层还包括遮光部，所述遮光部和所述第二触控走线采用一道光罩制成。
在一些实施例中，所述第二触控走线的组成材料包括钼、铝、铝镍合金、钼钨合金、铬、或铜中的一种或多种。
在一些实施例中，所述第一触控走线的部分邻近所述第一区域，所述第一触控走线的剩余部分远离所述第一区域，或所述第一触控走线全部远离所述第一区域。
本发明实施例还提供了一种显示面板，所述显示面板包括阵列基板，所述阵列基板包括基板、位于基板之上的遮光层、位于所述遮光层之上的绝缘层以及位于所述绝缘层之上的金属层，所述阵列基板具有透光的第一区域和不透光的第二区域，所述遮光层、所述绝缘层以及所述金属层设置在所述第二区域上；
所述金属层包括数据线和第一触控走线；
所述遮光层包括第二触控走线，所述第二触控走线与所述第一触控走线连接，所述第二触控走线的至少一部分设置在所述数据线邻近所述第一区域的部分的下方。
在一些实施例中，所述第一触控走线的宽度小于或等于所述数据线的宽度。
在一些实施例中，所述绝缘层设置有通孔，所述第二触控走线与所述第一触控走线通过所述通孔连接。
在一些实施例中，所述遮光层包括多条第二触控走线，所述第二触控走线阵列排布，所述通孔包括第一通孔和第二通孔，所述第一触控走线的两端，通过所述第一通孔、所述第二通孔，分别与同列并相邻的两所述第二触控走线连接。
在一些实施例中，所述遮光层还包括遮光部，所述遮光部和所述第二触控走线采用一道光罩制成。
在一些实施例中，所述第二触控走线的组成材料包括钼、铝、铝镍合金、钼钨合金、铬、或铜中的一种或多种。
在一些实施例中，所述第一触控走线的部分邻近所述第一区域，所述第一触控走线的剩余部分远离所述第一区域，或所述第一触控走线全部远离所述第一区域。
 有益效果
本发明实施例的阵列基板和显示面板，通过在遮光层形成第二触控走线，并将第二触控走线的至少一部分设置在数据线邻近第一区域的部分的下方，提高了阵列基板的开口率。
 附图说明
为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下：
图1为本发明实施例提供的阵列基板的结构示意图。
图2为本发明实施例提供的阵列基板的另一结构示意图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
在图中，结构相似的单元是以相同标号表示。
在本文中提及“实施例”意味着，结合实施例描述的特定特征、结构或特性可以包含在本发明的至少一个实施例中。在说明书中的各个位置出现该短语并不一定均是指相同的实施例，也不是与其它实施例互斥的独立的或备选的实施例。本领域技术人员显式地和隐式地理解的是，本文所描述的实施例可以与其它实施例相结合。
本发明实施例提供了一种显示面板，其中该显示面板可以为液晶显示面板。具体的，该显示面板包括阵列基板，请参照图1，图1为本发明实施例提供的阵列基板的结构示意图。如图1所示，该阵列基板10包括基板11、位于所述基板11上的遮光层12、位于遮光层12上的绝缘层13以及位于绝缘层13上的金属层14。需要说明的是，如图2所示，该阵列基板10具有透光的第一区域a和不透光的第二区域b。具体的，遮光层12、绝缘层13以及金属层14等部件依次设置在第二区域b上。
其中，该基板11可以采用柔性材料制成，也可以采用刚性材料制成。具体的，基板11可以为玻璃基板。
如图2所示，金属层14包括数据线141和第一触控走线142，其中，数据线141和第二触控走线142的组成材料均可以包括钼、铝、铝镍合金、钼钨合金、铬、或铜中的一种或多种。需要说明的是，数据线141和第二触控走线142可以采用相同的材料制成，即数据线141和第二触控走线142可以通过一道光罩制成。
具体的，如图2所示，数据线141可以部分邻近第一区域a，剩余部分远离第一区域a。在一些实施例中，类似于数据线141，第一触控走线142可以部分邻近第一区域a，剩余部分远离第一区域a。优选的，如图2所示，第一触控走线142还可以全部远离第一区域a。
遮光层12包括第二触控走线121以及遮光部122。其中，遮光部122采用遮光材料制成，比如a-si、金属材料等。具体的，遮光部122和第二触控走线121可以采用相同的金属材料制成，比如钼、铝、铝镍合金、钼钨合金、铬、或铜中的一种或多种，即可以采用一道光罩制成该第二触控走线121和遮光部122。
其中，第二触控走线121至少部分设置在数据线141邻近第一区域a部分的下方，这样第二触控走线121不会占据额外的第一区域a的空间，从而可以提高阵列基板10的开口率。优选的，可以将第二触控走线121的宽度设置为小于或等于数据线141的宽度，以使第二触控走线121完全被数据线141遮挡。
绝缘层13用于隔离金属层12以及遮光层14，该绝缘层13中包含由SiNx（氮化硅）、SiO 2（二氧化硅）组成的多膜层结构。如图2所示，绝缘层13上设置有通孔131，第二触控走线121可以穿过该通孔131，与第一触控走线142连接。具体的，如图1所示的通孔131局部放大图，通孔131包括第一通孔1311和第二通孔1312，第一触控走线142通过第一通孔1311，连接至位于该第一触控走线142上方的第二触控走线121，并通过第二通孔1312，连接至位于该第二触控走线下方的第二触控走线121。即，第一触控走线142通过第一通孔1311、第二通孔1312，分别与一第二触控走线121连接。
结合图1和图2，阵列基板10还包括掺杂层15、第一绝缘层16、栅极走线层17、第二绝缘层18、平坦层19、第一电极层20、第三绝缘层21以及第二电极层22。其中，掺杂层15、第一绝缘层16、栅极走线层17、第二绝缘层18依次设置绝缘层13和金属层14之间。其中，掺杂层15包括第一掺杂区域、第二掺杂区域，以及设置在该第一掺杂区域和该第二掺杂区域之间的有源层。在栅极走线层17中具有扫描线171，该扫描线171可以由Mo、Ta等金属材料制成。平坦层19、第一电极层20、第三绝缘层21以及第二电极层22，依次设置在金属层14之上。其中，第一电极层20、第二电极层22均由ITO（Indium Tin Oxide，氧化铟锡）材料制成。
本发明实施例的像素结构和显示面板，通过在遮光层形成第二触控走线，并将第二触控走线的至少一部分设置在数据线邻近第一区域的部分的下方，提高了阵列基板的开口率。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (19)

  1. 一种阵列基板，其中，所述阵列基板包括：基板、位于基板之上的遮光层、位于所述遮光层之上的绝缘层以及位于所述绝缘层之上的金属层，所述阵列基板具有透光的第一区域和不透光的第二区域，所述遮光层、所述绝缘层以及所述金属层设置在所述第二区域上；
    所述金属层包括数据线和第一触控走线；
    所述遮光层包括第二触控走线，所述第二触控走线与所述第一触控走线连接，所述第二触控走线的至少一部分设置在所述数据线邻近所述第一区域的部分的下方；
    其中，所述第一触控走线的宽度小于或等于所述数据线的宽度；所述绝缘层设置有通孔，所述第二触控走线与所述第一触控走线通过所述通孔连接。
  2. 根据权利要求1所述的阵列基板，其中，所述遮光层包括多条第二触控走线，所述第二触控走线阵列排布，所述通孔包括第一通孔和第二通孔，所述第一触控走线的两端，通过所述第一通孔、所述第二通孔，分别与同列并相邻的两所述第二触控走线连接。
  3. 根据权利要求1所述的阵列基板，其中，所述遮光层还包括遮光部，所述遮光部和所述第二触控走线采用一道光罩制成。
  4. 根据权利要求1所述的阵列基板，其中，所述第二触控走线的组成材料包括钼、铝、铝镍合金、钼钨合金、铬、或铜中的一种或多种。
  5. 根据权利要求1所述的阵列基板，其中，所述第一触控走线的部分邻近所述第一区域，所述第一触控走线的剩余部分远离所述第一区域，或所述第一触控走线全部远离所述第一区域。
  6. 一种阵列基板，其中，所述阵列基板包括：基板、位于基板之上的遮光层、位于所述遮光层之上的绝缘层以及位于所述绝缘层之上的金属层，所述阵列基板具有透光的第一区域和不透光的第二区域，所述遮光层、所述绝缘层以及所述金属层设置在所述第二区域上；
    所述金属层包括数据线和第一触控走线；
    所述遮光层包括第二触控走线，所述第二触控走线与所述第一触控走线连接，所述第二触控走线的至少一部分设置在所述数据线邻近所述第一区域的部分的下方。
  7. 根据权利要求6所述的阵列基板，其中，所述第一触控走线的宽度小于或等于所述数据线的宽度。
  8. 根据权利要求6所述的阵列基板，其中，所述绝缘层设置有通孔，所述第二触控走线与所述第一触控走线通过所述通孔连接。
  9. 根据权利要求8所述的阵列基板，其中，所述遮光层包括多条第二触控走线，所述第二触控走线阵列排布，所述通孔包括第一通孔和第二通孔，所述第一触控走线的两端，通过所述第一通孔、所述第二通孔，分别与同列并相邻的两所述第二触控走线连接。
  10. 根据权利要求6所述的阵列基板，其中，所述遮光层还包括遮光部，所述遮光部和所述第二触控走线采用一道光罩制成。
  11. 根据权利要求6所述的阵列基板，其中，所述第二触控走线的组成材料包括钼、铝、铝镍合金、钼钨合金、铬、或铜中的一种或多种。
  12. 根据权利要求6所述的阵列基板，其中，所述第一触控走线的部分邻近所述第一区域，所述第一触控走线的剩余部分远离所述第一区域，或所述第一触控走线全部远离所述第一区域。
  13. 一种显示面板，其中，所述显示面板包括阵列基板，所述阵列基板包括基板、位于基板之上的遮光层、位于所述遮光层之上的绝缘层以及位于所述绝缘层之上的金属层，所述阵列基板具有透光的第一区域和不透光的第二区域，所述遮光层、所述绝缘层以及所述金属层设置在所述第二区域上；
    所述金属层包括数据线和第一触控走线；
    所述遮光层包括第二触控走线，所述第二触控走线与所述第一触控走线连接，所述第二触控走线的至少一部分设置在所述数据线邻近所述第一区域的部分的下方。
  14. 根据权利要求13所述的显示面板，其中，所述第一触控走线的宽度小于或等于所述数据线的宽度。
  15. 根据权利要求13所述的显示面板，其中，所述绝缘层设置有通孔，所述第二触控走线与所述第一触控走线通过所述通孔连接。
  16. 根据权利要求15所述的显示面板，其中，所述遮光层包括多条第二触控走线，所述第二触控走线阵列排布，所述通孔包括第一通孔和第二通孔，所述第一触控走线的两端，通过所述第一通孔、所述第二通孔，分别与同列并相邻的两所述第二触控走线连接。
  17. 根据权利要求13所述的显示面板，其中，所述遮光层还包括遮光部，所述遮光部和所述第二触控走线采用一道光罩制成。
  18. 根据权利要求13所述的阵列基板，其中，所述第二触控走线的组成材料包括钼铝、铝镍合金、钼钨合金、铬、或铜中的一种或多种。
  19. 根据权利要求13所述的阵列基板，其中，所述第一触控走线的部分邻近所述第一区域，所述第一触控走线的剩余部分远离所述第一区域，或所述第一触控走线全部远离所述第一区域。
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