WO2019205339A1 - 下电极及干蚀刻机 - Google Patents

下电极及干蚀刻机 Download PDF

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Publication number
WO2019205339A1
WO2019205339A1 PCT/CN2018/098931 CN2018098931W WO2019205339A1 WO 2019205339 A1 WO2019205339 A1 WO 2019205339A1 CN 2018098931 W CN2018098931 W CN 2018098931W WO 2019205339 A1 WO2019205339 A1 WO 2019205339A1
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WIPO (PCT)
Prior art keywords
counterbore
bolt
lower electrode
seal
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2018/098931
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English (en)
French (fr)
Inventor
季黎明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Wuhan China Star Optoelectronics Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Technology Co Ltd
Priority to US16/336,106 priority Critical patent/US20200144033A1/en
Publication of WO2019205339A1 publication Critical patent/WO2019205339A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Definitions

  • the present invention relates to a dry etching technique, and more particularly to a lower electrode and a corresponding dry etching machine.
  • the etching process is an important step in the process of fabricating an array substrate of a thin film transistor liquid crystal display device.
  • the etching process is classified into a dry etching process and a wet etching process according to the physical state of the etchant.
  • the dry etching process generates plasma by using an etching gas and an RF RF electrode, and removes a film that is not covered and protected by the photoresist on the glass substrate by chemical reaction and physical reaction to complete the transfer mask pattern. To the purpose of the film.
  • the lower electrode includes a base layer 11' and a ceramic layer 12' for supporting the glass substrate disposed on the base layer, and the fixed connection ceramic layer 12 'and the base layer 11' pass the bolt 13' and the washer 14' sleeved on the bolt 13', the ceramic layer 12' includes a connecting hole 121' for the bolt to pass through and a first one disposed on the connecting hole 121'
  • the counterbore 122', the washer 14' is located between the bolt 13' nut and the first counterbore 122'.
  • the first counterbore 122' is an oblong hole, so that the gasket 14' cannot completely cover the connection hole 121', so that the ceramic cover 15' is not tightly covered.
  • the plasma will penetrate the first counterbore 122' and the connecting hole 121', and react with the sub-base 12', causing the sub-base layer to be injured, thereby causing the dry etching machine to malfunction, causing a decrease in productivity.
  • the invention provides a lower electrode and a dry etching machine of a dry etching machine; in order to solve the technical problem that the existing lower electrode is in the dry etching, the plasma enters the connection hole and reacts with the substrate layer, causing the base layer to be injured. .
  • Embodiments of the present invention provide a lower electrode including a base layer, a carrier layer for supporting an external glass substrate, and a bolt for fixedly connecting the base layer and the carrier layer.
  • the lower electrode includes a seal sleeve sleeved on an outer peripheral side of the bolt, the seal member including a seal body and a through hole formed in the seal body body through which the bolt passes;
  • the bearing layer includes a connecting hole through which the bolt passes and a first counterbore that communicates with the connecting hole toward the end of the base layer;
  • the bolt sequentially passes through the through hole and the connecting hole, and is screwed with the base layer; the seal body and the bolt nut are disposed in the first counterbore;
  • the seal body completely covers the opening of the connecting hole;
  • the shape of the seal body is the same as the shape of the first counterbore, and the seal body is disposed in an interference manner in the first counterbore ;
  • the seal is made of polyetheretherketone.
  • the sealing member includes a receiving groove recessed in the sealing body opposite to an end of the base layer and communicating with the through hole, and the bolt nut is disposed in the receiving groove Inside.
  • the thickness of the seal is equal to the depth of the first counterbore.
  • the lower electrode further includes a sealing cover
  • the carrier layer includes a second counterbore disposed at an end of the first counterbore facing away from the base layer, and the sealing cover is sealed In the second counterbore.
  • the base layer is an electrode
  • the carrier layer is ceramic
  • the bolt is an insulating bolt
  • the sealing cover is a ceramic cover.
  • the embodiment of the present invention further provides a lower electrode, comprising a base layer, a bearing layer disposed on the base layer for supporting the external glass substrate, and a bolt fixedly connecting the base layer and the bearing layer;
  • the lower electrode includes a seal sleeve sleeved on an outer peripheral side of the bolt, the seal member including a seal body and a through hole formed in the seal body body through which the bolt passes;
  • the bearing layer includes a connecting hole through which the bolt passes and a first counterbore that communicates with the connecting hole toward an end of the base layer;
  • the seal body and the bolt nut are disposed in the first counterbore; the bolt sequentially passes through the through hole and the connecting hole, and is screwed with the base layer;
  • seal body completely covers the opening of the connecting hole.
  • the shape of the seal body is the same as the shape of the first counterbore, and the seal body is disposed in an interference manner in the first counterbore.
  • the sealing member is made of a polyetheretherketone material.
  • the sealing member includes a receiving groove recessed in the sealing body opposite to an end of the base layer and communicating with the through hole, and the bolt nut is disposed in the receiving groove Inside.
  • the thickness of the seal is equal to the depth of the first counterbore.
  • the lower electrode further includes a sealing cover
  • the carrier layer includes a second counterbore disposed at an end of the first counterbore facing away from the base layer, and the sealing cover is sealed In the second counterbore.
  • the base layer is an electrode
  • the carrier layer is ceramic
  • the bolt is an insulating bolt
  • the sealing cover is a ceramic cover.
  • the present invention also relates to a dry etching machine including a reaction chamber, an upper electrode disposed at an upper portion of the reaction chamber, and a lower electrode disposed at a lower portion of the reaction chamber; the upper electrode and the lower electrode Relatively disposed, the upper electrode is connected to the power source, and the lower electrode is grounded;
  • the lower electrode includes a base layer, a bearing layer disposed on the base layer for supporting the external glass substrate, and a bolt fixedly connecting the base layer and the bearing layer;
  • the lower electrode includes a seal sleeve sleeved on an outer peripheral side of the bolt, the seal member including a seal body and a through hole formed in the seal body body through which the bolt passes;
  • the bearing layer includes a connecting hole through which the bolt passes and a first counterbore that communicates with the connecting hole toward the end of the base layer;
  • the bolt sequentially passes through the through hole and the connecting hole, and is screwed with the base layer; the seal body and the bolt nut are disposed in the first counterbore;
  • seal body completely covers the opening of the connecting hole.
  • the shape of the seal body is the same as the shape of the first counterbore, and the seal body is disposed in an interference manner in the first counterbore.
  • the sealing member is made of a polyetheretherketone material.
  • the sealing member includes a receiving groove recessed in the sealing body opposite to an end of the base layer and communicating with the through hole, and the bolt nut is disposed in the receiving Inside the slot.
  • the thickness of the seal is equal to the depth of the first counterbore.
  • the lower electrode further includes a sealing cover
  • the carrier layer includes a second counterbore disposed at an end of the first counterbore facing away from the substrate, the sealing cap sealing Provided in the second counterbore.
  • the base layer is an electrode
  • the carrier layer is ceramic
  • the bolt is an insulating bolt
  • the sealing cover is a ceramic cover.
  • the beneficial effects of the present invention are as follows: the lower electrode and the dry etching machine of the present invention improve the sealing property of the sealing member by completely covering the opening of the connecting hole by the sealing member, thereby preventing the plasma from entering the connecting hole and causing the lower electrode to be struck.
  • the seal is made of polyetheretherketone, which improves the high temperature and compressive strength of the seal, avoids the deformation of the seal during high temperature operation, and loses the seal, which leads to the lower electrode. Was injured.
  • FIG. 1 is a schematic cross-sectional structural view of a conventional lower electrode
  • FIG. 2 is a schematic top plan view of a conventional lower electrode removing ceramic cover
  • FIG. 3 is a cross-sectional structural view showing an embodiment of a lower electrode of the present invention.
  • FIG. 4 is a schematic top plan view showing an embodiment of a lower electrode of the present invention with a ceramic cover removed;
  • Figure 5 is a top plan view showing the sealing member of the embodiment of the lower electrode of the present invention.
  • Figure 6 is a cross-sectional view taken along line AA of Figure 5;
  • Figure 7 is a schematic view showing the structure of an embodiment of the dry etching machine of the present invention.
  • FIG. 3 is a schematic cross-sectional structural view of an embodiment of a lower electrode of the present invention
  • FIG. 4 is a schematic top plan view of a ceramic electrode cover according to an embodiment of the lower electrode of the present invention
  • a schematic top view of the seal of an embodiment of the electrode is a schematic cross-sectional structural view of an embodiment of a lower electrode of the present invention.
  • the lower electrode of the present embodiment includes a base layer 11, a carrier layer 12 for supporting the external glass substrate disposed on the base layer 11, and a bolt 13 for fixing the base layer 11 and the carrier layer 12;
  • the lower electrode further includes a sealing member 14 sleeved on the outer peripheral side of the bolt 13, the sealing member 14 includes a sealing body 141 and a through hole 142 formed in the sealing body 141 for the bolt to pass through;
  • the bearing layer 12 includes a connecting hole 121 through which the bolt 13 passes and a first counterbore 122 communicating with the connecting hole 121 facing away from the end of the base layer 11;
  • the seal body 141 and the bolt 13 are disposed in the first counterbore 122; the bolt 13 passes through the through hole 142 and the connecting hole 121 in sequence, and is screwed to the base layer 11;
  • the seal body 141 completely covers the opening of the connection hole 121.
  • the sealing member 14 completely covers the opening of the connecting hole 121, so that the sealing body 141 and the bottom surface of the first counterbore 122 are more closely connected, thereby improving the sealing member 14 disposed at the first counterbore 122.
  • the sealing property prevents the plasma from entering the connection hole and causing the lower electrode to be injured.
  • the shape of the seal body 141 is the same as the shape of the first counterbore 122, and the seal body 141 is disposed in the first counterbore 122.
  • the shape of the outer contour of the seal body 141 in the sealing member 14 is the same as the contour shape of the first counterbore 122, and the outer contour area of the sealing body 141 is larger than the contour area of the first counterbore 122.
  • Such an arrangement enables the outer peripheral wall of the seal body 141 to be force-balanced to be in a tight fit with the first counterbore 122.
  • the sealing member 14 is disposed in the first counterbore 122 by interference, to improve the stability of the tight connection of the sealing member 14 and the inner wall of the first counterbore 122.
  • the seal body 141 and the first counterbore 122 are both racetrack-shaped, but in the present invention, the shapes of the seal body 141 and the first counterbore 122 are not limited thereto, such as Both can be oblong, rounded rectangle, and so on.
  • the sealing member 14 includes a receiving groove 143 which is recessed in the sealing body 141 opposite to the end of the base layer 11 and communicates with the through hole 142.
  • the bolt 13 is provided with a nut In the receiving groove 143.
  • Suspending the bolt 13 in the receiving groove 143 saves space on the one hand; on the other hand, when the bolt 13 is excessively disposed in the receiving groove 143, the nut of the bolt 13 is pressed against the inner wall of the receiving groove 143. Further, the seal body 141 is pressed against the hole wall of the first counterbore 122, thereby improving the seal between the bolt 13, the seal 14 and the first counterbore 122.
  • the shape of the nut of the bolt 13 is the same as the shape of the receiving groove 143.
  • the bolt 13 nut and the receiving groove 143 are all circular in shape.
  • the thickness of the sealing member 14 is equal to the depth of the first counterbore 122. Such an arrangement allows the side walls of the seal 14 to complete covering the side walls of the first counterbore 122, improving the sealing of both.
  • the thickness of the sealing member 14 may also be slightly smaller than the depth of the first counterbore 122.
  • the sealing member 14 is made of a polyetheretherketone (PEEK) material.
  • PEEK polymer is a high temperature, high performance thermoplastic specialty engineering plastic. Has good mechanical strength and wear resistance, compressive strength. The material has a compressive strength of 200 MPa at 120 ° C and is not easily deformed. Therefore, the disadvantage that the sealing member is easily deformed in the environment at a temperature of about 120 ° C and the sealing performance is lost is overcome, thereby preventing the lower electrode from being injured.
  • the lower electrode further includes a sealing cover 15 including a second counterbore 123 disposed at an end of the first counterbore 122 facing away from the base layer 11, the sealing cover 15 The seal is disposed in the second counterbore 123.
  • the base layer 11 is an electrode
  • the carrier layer 12 is ceramic
  • the bolt 13 is an insulating bolt
  • the sealing cover 15 is a ceramic cover.
  • the base layer 11 is placed while the sealing member 14 is placed in the first counterbore 122 of the carrier layer 12;
  • the bolt 13 is sequentially passed through the second counterbore 123, the receiving groove 143, the through hole 142, and the connecting hole 121, and is screwed with the threaded hole of the base layer 11, while the bolt 13 is disposed in the receiving groove 143. ;
  • sealing cover 15 is sealingly disposed in the second counterbore 123 to complete the assembly.
  • the embodiment and the upper electrode cooperate to work, if the sealing cover 15 is not tightly sealed, the plasma enters the first counterbore 122, but due to the seal body 141 and the first counterbore 122 of the sealing member 14 The cover-type sealing connection prevents the plasma from entering the connection hole 121 and thus cannot damage the lower electrode.
  • the sealing member 141 has a compressive strength of 200 MPa at 120 ° C and is not easily deformed, thereby avoiding damage and deformation of the sealing member 14 itself, resulting in loss of sealing property, thereby protecting the lower electrode from being injured.
  • the present invention also relates to a dry etching machine including a reaction chamber 21, an upper electrode 22 disposed at an upper portion of the reaction chamber 21, and a lower electrode 23 disposed at a lower portion of the reaction chamber 21; an upper electrode 22 and a lower portion
  • the electrodes 23 are oppositely disposed, the upper electrode 22 is connected to the power source 24, and the lower electrode 23 is grounded;
  • the lower electrode 23 includes a base layer, a carrier layer disposed on the base layer for supporting the external glass substrate, and a bolt fixedly connecting the base layer and the carrier layer;
  • the lower electrode 23 includes a seal sleeved on an outer peripheral side of the bolt, the seal member including a seal body and a through hole formed in the seal body for the bolt to pass through;
  • the carrier layer includes a connection hole through which the bolt passes and a first counterbore that communicates with the connection hole toward the end of the base layer;
  • the bolt sequentially passes through the through hole and the connecting hole, and is screwed with the base layer; the seal body and the bolt nut are disposed in the first counterbore;
  • seal body completely covers the opening of the connecting hole.
  • the shape of the seal body is the same as the shape of the first counterbore, and the seal body is disposed in an interference manner in the first counterbore.
  • the sealing member is made of a polyetheretherketone material.
  • the sealing member includes a receiving groove recessed in the sealing body opposite to an end of the base layer and communicating with the through hole, and the bolt nut is disposed in the receiving Inside the slot.
  • the thickness of the seal is equal to the depth of the first counterbore.
  • the lower electrode 23 further includes a sealing cover
  • the carrier layer includes a second counterbore disposed at an end of the first counterbore facing away from the base layer, and the sealing cover is sealed. In the second counterbore.
  • the base layer is an electrode
  • the carrier layer is ceramic
  • the bolt is an insulating bolt
  • the sealing cover is a ceramic cover.
  • the lower electrode and the dry etching machine of the present invention improve the sealing property of the sealing member by completely covering the opening of the connecting hole with respect to the lower electrode of the dry etching machine of the prior art.
  • the plasma is prevented from entering the connecting hole and the lower electrode is damaged;
  • the sealing member is made of polyetheretherketone to improve the high temperature resistance and compressive strength of the sealing member, and the sealing member is prevented from being subjected to high temperature operation.
  • the force is deformed, and the sealing property is lost, thereby causing the lower electrode to be injured; solving the technical problem that the existing lower electrode is in the dry etching, the plasma enters the connection hole and reacts with the base layer, causing the base layer to be injured. .

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

本发明提供一种下电极和干蚀刻机，包括底基层、承载层和螺栓，下电极包括密封件，密封件包括密封件本体和通孔；承载层包括连接孔和第一沉孔；螺栓依次穿过通孔和连接孔，并和底基层螺纹连接；密封件本体和螺栓螺帽设置在第一沉孔内。本发明通过将密封件完全覆盖连接孔的开口，避免了等离子体进入连接孔导致下电极被击伤。

Description

下电极及干蚀刻机 技术领域
本发明涉及一种干蚀刻技术，特别涉及一种下电极及相应的干蚀刻机。
 背景技术
随着信息社会的发展，对显示设备的需求增长，因而推动来了液晶面板行业的快速发展，面板的产量不断提升。蚀刻工艺是制造薄膜晶体管液晶显示装置的阵列基板过程中的一种重要步骤。蚀刻工艺根据蚀刻剂的物理状态分为干蚀刻工艺和湿蚀刻工艺。
其中干蚀刻工艺为利用蚀刻气体和RF射频电极的作用产生等离子体，在玻璃基板上把没有被光阻覆盖及保护的薄膜，以化学反应和物理反应的方式加以去除，以完成转移光罩图案到薄膜的目的。
在现有的用于干蚀刻机的下电极中，如图1所示，下电极包括底基层11’和设置在底基层上的用于承载玻璃基板的陶瓷层12’、固定连接陶瓷层12’和底基层11’通过螺栓13’和套设在螺栓13’上的垫圈14’，陶瓷层12’包括用于供螺栓穿过的连接孔121’和设置在连接孔121’上的第一沉孔122’，垫圈14’位于螺栓13’螺帽和第一沉孔122’之间。
如图2，当进行干蚀刻时，由于垫圈14’为圆环状，第一沉孔122’为长圆孔，导致垫圈14’无法完全覆盖连接孔121’，因此只要陶瓷盖15’覆盖不严密，等离子体便会会钻入第一沉孔122’和连接孔121’，并和底基层12’发生反应，造成底基层被击伤，进而造成干蚀刻机故障，引起产能下降。
 技术问题
本发明提供一种干蚀刻机的下电极及干蚀刻机；以解决现有的下电极在进行干蚀刻时，等离子体进入连接孔并与底基层发生反应，导致底基层被击伤的技术问题。
 技术解决方案
为实现上述目的，本发明提供的技术方案如下：
本发明实施例提供了一种下电极，包括底基层、设置在所述底基层上的用于承托外置玻璃基板的承载层和固定连接所述底基层和所述承载层的螺栓，
所述下电极包括套设在所述螺栓外周侧的密封件，所述密封件包括密封件本体和开设在所述密封件本体上的供所述螺栓穿过的通孔；
所述承载层包括供螺栓穿过的连接孔和连通于所述连接孔背向所述底基层一端的第一沉孔；
所述螺栓依次穿过所述通孔和所述连接孔，并和所述底基层螺纹连接；所述密封件本体和所述螺栓螺帽设置在所述第一沉孔内；
其中所述密封件本体完全覆盖所述连接孔的开口；所述密封件本体的形状和所述第一沉孔的形状相同，且所述密封件本体过盈设置在所述第一沉孔内；
所述密封件由聚醚醚酮材质制成。
在本发明的下电极中，所述密封件包括凹设在所述密封件本体背向所述底基层一端的连通于所述通孔的容纳槽，所述螺栓螺帽设置在所述容纳槽内。
在本发明的下电极中，所述密封件的厚度等于所述第一沉孔的深度。
在本发明的下电极中，所述下电极还包括一密封盖，所述承载层包括设置在所述第一沉孔背向所述底基层一端的第二沉孔，所述密封盖密封设置在所述第二沉孔内。
在本发明的下电极中，所述底基层为电极，所述承载层为陶瓷，所述螺栓为绝缘螺栓，所述密封盖为陶瓷盖。
本发明实施例还提供一种下电极，包括底基层、设置在所述底基层上的用于承托外置玻璃基板的承载层和固定连接所述底基层和所述承载层的螺栓；
所述下电极包括套设在所述螺栓外周侧的密封件，所述密封件包括密封件本体和开设在所述密封件本体上的供所述螺栓穿过的通孔；
所述承载层包括供所述螺栓穿过的连接孔和连通于所述连接孔背向所述底基层一端的第一沉孔；
所述密封件本体和所述螺栓螺帽设置在所述第一沉孔内；所述螺栓依次穿过所述通孔和所述连接孔，并和所述底基层螺纹连接；
其中，所述密封件本体完全覆盖所述连接孔的开口。
在本发明的下电极中，所述密封件本体的形状和所述第一沉孔的形状相同，且所述密封件本体过盈设置在所述第一沉孔内。
在本发明的下电极中，所述密封件由聚醚醚酮材质制成。
在本发明的下电极中，所述密封件包括凹设在所述密封件本体背向所述底基层一端的连通于所述通孔的容纳槽，所述螺栓螺帽设置在所述容纳槽内。
在本发明的下电极中，所述密封件的厚度等于所述第一沉孔的深度。
在本发明的下电极中，所述下电极还包括一密封盖，所述承载层包括设置在所述第一沉孔背向所述底基层一端的第二沉孔，所述密封盖密封设置在所述第二沉孔内。
在本发明的下电极中，所述底基层为电极，所述承载层为陶瓷，所述螺栓为绝缘螺栓，所述密封盖为陶瓷盖。
本发明还涉及一种干蚀刻机，所述干蚀刻机包括反应腔、设置在所述反应腔上部的上电极和设置在所述反应腔下部的下电极；所述上电极和所述下电极相对设置，所述上电极连接电源，所述下电极接地；
所述下电极包括底基层、设置在所述底基层上的用于承托外置玻璃基板的承载层和固定连接所述底基层和所述承载层的螺栓；
所述下电极包括套设在所述螺栓外周侧的密封件，所述密封件包括密封件本体和开设在所述密封件本体上的供所述螺栓穿过的通孔；
所述承载层包括供螺栓穿过的连接孔和连通于所述连接孔背向所述底基层一端的第一沉孔；
所述螺栓依次穿过所述通孔和所述连接孔，并和所述底基层螺纹连接；所述密封件本体和所述螺栓螺帽设置在所述第一沉孔内；
其中，所述密封件本体完全覆盖所述连接孔的开口。
在本发明的干蚀刻机中，所述密封件本体的形状和所述第一沉孔的形状相同，且所述密封件本体过盈设置在所述第一沉孔内。
在本发明的干蚀刻机中，所述密封件由聚醚醚酮材质制成。
在本发明的干蚀刻机中，所述密封件包括凹设在所述密封件本体背向所述底基层一端的连通于所述通孔的容纳槽，所述螺栓螺帽设置在所述容纳槽内。
在本发明的干蚀刻机中，所述密封件的厚度等于所述第一沉孔的深度。
在本发明的干蚀刻机中，所述下电极还包括一密封盖，所述承载层包括设置在所述第一沉孔背向所述底基层一端的第二沉孔，所述密封盖密封设置在所述第二沉孔内。
在本发明的干蚀刻机中，所述底基层为电极，所述承载层为陶瓷，所述螺栓为绝缘螺栓，所述密封盖为陶瓷盖。
 有益效果
本发明的有益效果为：本发明的下电极和干蚀刻机，一方面通过将密封件完全覆盖连接孔的开口，提高了密封件的密封性，避免了等离子体进入连接孔导致下电极被击伤；另一方面通过采用聚醚醚酮材质制成密封件，提高了密封件耐高温和抗压强度，避免在进行高温作业中使得密封件受力变形，而损失密封性，进而导致下电极被击伤。
 附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面对实施例中所需要使用的附图作简单的介绍。下面描述中的附图仅为本发明的部分实施例，对于本领域普通技术人员而言，在不付出创造性劳动的前提下，还可以根据这些附图获取其他的附图。
图1为现有的下电极的剖面结构示意图；
图2为现有的下电极去除陶瓷盖的俯视结构示意图；
图3为本发明的下电极的实施例的剖面结构示意图；
图4为本发明的下电极的实施例去除陶瓷盖的俯视结构示意图；
图5为本发明的下电极的实施例的密封件的俯视结构示意图；
图6为图5中沿AA截面线的截面图；
图7为本发明的干蚀刻机的实施例的结构示意图。
 本发明的最佳实施方式
请参照附图中的图式，其中相同的组件符号代表相同的组件。以下的说明是基于所例示的本发明具体实施例，其不应被视为限制本发明未在此详述的其它具体实施例。
请参照图3-图5，图3为本发明的下电极的实施例的剖面结构示意图；图4为本发明的下电极的实施例去除陶瓷盖的俯视结构示意图；图5为本发明的下电极的实施例的密封件的俯视结构示意图。
本实施的下电极包括底基层11、设置在底基层11上的用于承托外置玻璃基板的承载层12和固定连接底基层11和承载层12的螺栓13；
下电极还包括套设在螺栓13外周侧的密封件14，密封件14包括密封件本体141和开设在密封件本体141上的供螺栓穿过的通孔142；
承载层12包括供螺栓13穿过的连接孔121和连通于连接孔121背向底基层11一端的第一沉孔122；
密封件本体141和螺栓13螺帽设置在第一沉孔122内；螺栓13依次穿过通孔142和连接孔121，并和底基层11螺纹连接；
其中，密封件本体141完全覆盖连接孔121的开口。
本实施例的下电极，通过将密封件14完全覆盖连接孔121的开口，使得密封件本体141和第一沉孔122底面更为密闭连接，从而提高了密封件14设置在第一沉孔122中的密封性，避免了等离子体进入连接孔导致下电极被击伤。
进一步的，密封件本体141的形状和第一沉孔122的形状相同，且密封件本体141过盈设置在第一沉孔122内。
具体的，密封件14中的密封件本体141的外轮廓的形状和第一沉孔122孔壁轮廓形状相同，且密封件本体141的外轮廓面积大于第一沉孔122孔壁轮廓面积。这样的设置，使得密封件本体141的外周壁能受力均衡与第一沉孔122过紧配合。通过将密封件14过盈设置在第一沉孔122中，以提高密封件14和第一沉孔122内壁紧密连接的稳定性。
在本实施例中，请参照图4，密封件本体141和第一沉孔122均为跑道形，但是在本发明中，密封件本体141和第一沉孔122的形状并不限于此，比如，二者可以均为长圆形、圆角矩形等等。
请参照图5-图6，在本实施例的下电极中，密封件14包括凹设在密封件本体141背向底基层11一端的连通于通孔142的容纳槽143，螺栓13螺帽设置在容纳槽143内。
将螺栓13螺帽沉设在容纳槽143内，一方面节省了空间；另一方面，当螺栓13螺帽过盈设置在容纳槽143内时，使得螺栓13螺帽挤压容纳槽143的内壁，进而使得密封件本体141挤压第一沉孔122孔壁，从而提高了螺栓13、密封件14和第一沉孔122之间的密封性。
优选的，螺栓13螺帽的形状和容纳槽143的形状一致。可选的，螺栓13螺帽和容纳槽143的形状均为圆形。
在本实施例的下电极中，密封件14的厚度等于第一沉孔122的深度。这样的设置，使得密封件14的侧壁完成覆盖第一沉孔122的侧壁，提高了二者的密封性。
其中，在本发明中，为了便于将密封件14装配在第一沉孔122内，密封件14的厚度也可以略小于第一沉孔122的深度。
另外，在本实施例的下电极中，密封件14由聚醚醚酮（PEEK）材质制成。PEEK聚合体是一种耐高温、高性能的热塑性特种工程塑料。有着良好的机械强度及耐磨性能，抗压强度。此材质120℃下抗压强度为200Mpa，不易变形。因此克服了密封件在温度约为120℃的环境中，受力易变形而导致损失密封性能的缺点，进而避免下电极被击伤。
基于上述的结构，在本实施例的下电极中，下电极还包括一密封盖15，承载层12包括设置在第一沉孔122背向底基层11一端的第二沉孔123，密封盖15密封设置在第二沉孔123内。
在本实施例的下电极中，底基层11为电极，承载层12为陶瓷，螺栓13为绝缘螺栓，密封盖15为陶瓷盖。
本实施例的下电极的装配过程是：
首先将底基层11放置好，同时将密封件14放置在承载层12的第一沉孔122内；
随后，将底基层11的螺纹孔和承载层12的连接孔121进行对接；
然后，将螺栓13依次穿过第二沉孔123、容纳槽143、通孔142和连接孔121，并和底基层11的螺纹孔进行螺纹连接，同时使得螺栓13螺帽设置在容纳槽143内；
最后，将密封盖15密封设置在第二沉孔123内，完成装配。
这样便完成了本实施例的装配过程。
另外，当本实施例和上电极配合进行工作时，如若密封盖15密封不严密，导致等离子体进入第一沉孔122，但是由于密封件14的密封件本体141和第一沉孔122的全覆盖式密封连接，使得等离子体不会进入连接孔121，进而无法击伤下电极。
同时，由于密封件14具有良好的机械强度及耐磨性能，抗压强度。密封件141在120℃下抗压强度为200Mpa，不易变形，因而避免了密封件14自身损伤变形，导致损失密封性的问题，进而保护下电极不被击伤。
请参照图7，本发明还涉及一种干蚀刻机，干蚀刻机包括反应腔21、设置在反应腔21上部的上电极22和设置在反应腔21下部的下电极23；上电极22和下电极23相对设置，上电极22连接电源24，下电极23接地；
下电极23包括底基层、设置在底基层上的用于承托外置玻璃基板的承载层和固定连接所述底基层和所述承载层的螺栓；
下电极23包括套设在所述螺栓外周侧的密封件，所述密封件包括密封件本体和开设在所述密封件本体上的供所述螺栓穿过的通孔；
承载层包括供螺栓穿过的连接孔和连通于所述连接孔背向所述底基层一端的第一沉孔；
所述螺栓依次穿过所述通孔和所述连接孔，并和所述底基层螺纹连接；所述密封件本体和所述螺栓螺帽设置在所述第一沉孔内；
其中，所述密封件本体完全覆盖所述连接孔的开口。
在本发明的干蚀刻机中，所述密封件本体的形状和所述第一沉孔的形状相同，且所述密封件本体过盈设置在所述第一沉孔内。
在本发明的干蚀刻机中，所述密封件由聚醚醚酮材质制成。
在本发明的干蚀刻机中，所述密封件包括凹设在所述密封件本体背向所述底基层一端的连通于所述通孔的容纳槽，所述螺栓螺帽设置在所述容纳槽内。
在本发明的干蚀刻机中，所述密封件的厚度等于所述第一沉孔的深度。
在本发明的干蚀刻机中，下电极23还包括一密封盖，所述承载层包括设置在所述第一沉孔背向所述底基层一端的第二沉孔，所述密封盖密封设置在所述第二沉孔内。
在本发明的干蚀刻机中，所述底基层为电极，所述承载层为陶瓷，所述螺栓为绝缘螺栓，所述密封盖为陶瓷盖。
综上所述，相较于现有技术的干蚀刻机的下电极，本发明的下电极和干蚀刻机，一方面通过将密封件完全覆盖连接孔的开口，提高了密封件的密封性，避免了等离子体进入连接孔导致下电极被击伤；另一方面通过采用聚醚醚酮材质制成密封件，提高了密封件耐高温和抗压强度，避免在进行高温作业中使得密封件受力变形，而损失密封性，进而导致下电极被击伤；解决了现有的下电极在进行干蚀刻时，等离子体进入连接孔并与底基层发生反应，导致底基层被击伤的技术问题。
本发明尽管已经相对于一个或多个实现方式示出并描述了本公开，但是本领域技术人员基于对本说明书和附图的阅读和理解将会想到等价变型和修改。本公开包括所有这样的修改和变型，并且仅由所附权利要求的范围限制。此外，尽管本公开的特定特征已经相对于若干实现方式中的仅一个被公开，但是这种特征可以与如可以对给定或特定应用而言是期望和有利的其他实现方式的一个或多个其他特征组合。而且，就术语“包括”、“具有”、“含有”或其变形被用在具体实施方式或权利要求中而言，这样的术语旨在以与术语“包含”相似的方式包括。
综上所述，虽然本发明已以实施例揭露如上，实施例前的序号，如“第一”、“第二”等仅为描述方便而使用，对本发明各实施例的顺序不造成限制。并且，上述实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (19)

  1. 一种下电极，包括底基层、设置在所述底基层上的用于承托外置玻璃基板的承载层和固定连接所述底基层和所述承载层的螺栓，其中，
    所述下电极包括套设在所述螺栓外周侧的密封件，所述密封件包括密封件本体和开设在所述密封件本体上的供所述螺栓穿过的通孔；
    所述承载层包括供螺栓穿过的连接孔和连通于所述连接孔背向所述底基层一端的第一沉孔；
    所述螺栓依次穿过所述通孔和所述连接孔，并和所述底基层螺纹连接；所述密封件本体和所述螺栓螺帽设置在所述第一沉孔内；
    其中所述密封件本体完全覆盖所述连接孔的开口；所述密封件本体的形状和所述第一沉孔的形状相同，且所述密封件本体过盈设置在所述第一沉孔内；
    所述密封件由聚醚醚酮材质制成。
  2. 根据权利要求1所述的下电极，其中，所述密封件包括凹设在所述密封件本体背向所述底基层一端的连通于所述通孔的容纳槽，所述螺栓螺帽设置在所述容纳槽内。
  3. 根据权利要求2所述的下电极，其中，所述密封件的厚度等于所述第一沉孔的深度。
  4. 根据权利要求1所述的下电极，其中，所述下电极还包括一密封盖，所述承载层包括设置在所述第一沉孔背向所述底基层一端的第二沉孔，所述密封盖密封设置在所述第二沉孔内。
  5. 根据权利要求4所述的下电极，其中，所述底基层为电极，所述承载层为陶瓷，所述螺栓为绝缘螺栓，所述密封盖为陶瓷盖。
  6. 一种下电极，包括底基层、设置在所述底基层上的用于承托外置玻璃基板的承载层和固定连接所述底基层和所述承载层的螺栓，其中，
    所述下电极包括套设在所述螺栓外周侧的密封件，所述密封件包括密封件本体和开设在所述密封件本体上的供所述螺栓穿过的通孔；
    所述承载层包括供螺栓穿过的连接孔和连通于所述连接孔背向所述底基层一端的第一沉孔；
    所述螺栓依次穿过所述通孔和所述连接孔，并和所述底基层螺纹连接；所述密封件本体和所述螺栓螺帽设置在所述第一沉孔内；
    其中所述密封件本体完全覆盖所述连接孔的开口。
  7. 根据权利要求6所述的下电极，其中，所述密封件本体的形状和所述第一沉孔的形状相同，且所述密封件本体过盈设置在所述第一沉孔内。
  8. 根据权利要求6所述的下电极，其中，所述密封件由聚醚醚酮材质制成。
  9. 根据权利要求6所述的下电极，其中，所述密封件包括凹设在所述密封件本体背向所述底基层一端的连通于所述通孔的容纳槽，所述螺栓螺帽设置在所述容纳槽内。
  10. 根据权利要求9所述的下电极，其中，所述密封件的厚度等于所述第一沉孔的深度。
  11. 根据权利要求6所述的下电极，其中，所述下电极还包括一密封盖，所述承载层包括设置在所述第一沉孔背向所述底基层一端的第二沉孔，所述密封盖密封设置在所述第二沉孔内。
  12. 根据权利要求11所述的下电极，其中，所述底基层为电极，所述承载层为陶瓷，所述螺栓为绝缘螺栓，所述密封盖为陶瓷盖。
  13. 一种干蚀刻机，其中，所述干蚀刻机包括反应腔、设置在所述反应腔上部的上电极和设置在所述反应腔下部的下电极；所述上电极和所述下电极相对设置，所述上电极连接电源，所述下电极接地；
    所述下电极包括底基层、设置在所述底基层上的用于承托外置玻璃基板的承载层和固定连接所述底基层和所述承载层的螺栓；
    所述下电极包括套设在所述螺栓外周侧的密封件，所述密封件包括密封件本体和开设在所述密封件本体上的供所述螺栓穿过的通孔；
    所述承载层包括供螺栓穿过的连接孔和连通于所述连接孔背向所述底基层一端的第一沉孔；
    所述螺栓依次穿过所述通孔和所述连接孔，并和所述底基层螺纹连接；所述密封件本体和所述螺栓螺帽设置在所述第一沉孔内；
    其中所述密封件本体完全覆盖所述连接孔的开口。
  14. 根据权利要求13所述的干蚀刻机，其中，所述密封件本体的形状和所述第一沉孔的形状相同，且所述密封件本体过盈设置在所述第一沉孔内。
  15. 根据权利要求13所述的干蚀刻机，其中，所述密封件由聚醚醚酮材质制成。
  16. 根据权利要求13所述的干蚀刻机，其中，所述密封件包括凹设在所述密封件本体背向所述底基层一端的连通于所述通孔的容纳槽，所述螺栓螺帽设置在所述容纳槽内。
  17. 根据权利要求16所述的干蚀刻机，其中，所述密封件的厚度等于所述第一沉孔的深度。
  18. 根据权利要求13所述的干蚀刻机，其中，所述下电极还包括一密封盖，所述承载层包括设置在所述第一沉孔背向所述底基层一端的第二沉孔，所述密封盖密封设置在所述第二沉孔内。
  19. 根据权利要求18所述的干蚀刻机，其中，所述底基层为电极，所述承载层为陶瓷，所述螺栓为绝缘螺栓，所述密封盖为陶瓷盖。
PCT/CN2018/098931 2018-04-28 2018-08-06 下电极及干蚀刻机 Ceased WO2019205339A1 (zh)

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Publication number Priority date Publication date Assignee Title
KR102115385B1 (ko) * 2020-03-20 2020-05-27 주식회사 테크놀로지메이컬스 체결력을 향상시킨 맞물림 체결 상부 전극 조립체
CN112382552A (zh) * 2020-11-13 2021-02-19 上海华力集成电路制造有限公司 晶圆装载平台装置及拆装工具
KR102856181B1 (ko) * 2021-06-01 2025-09-05 주식회사 원익아이피에스 기판지지부의 고정을 위한 고정조립체 및 그를 포함하는 기판처리장치
CN114743857B (zh) * 2022-05-18 2025-09-05 芜湖通潮精密机械股份有限公司 一种干刻机台下电极及其制造工艺方法
CN116169000A (zh) * 2023-02-22 2023-05-26 福建华佳彩有限公司 一种新型干蚀刻机下电极顶料销的密封结构

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1246724A (zh) * 1998-08-26 2000-03-08 三星电子株式会社 等离子体蚀刻设备和用这种设备制造的液晶显示模块
CN104851832A (zh) * 2014-02-18 2015-08-19 北京北方微电子基地设备工艺研究中心有限责任公司 一种固定装置、反应腔室及等离子体加工设备
CN105225989A (zh) * 2015-10-13 2016-01-06 京东方科技集团股份有限公司 等离子刻蚀机
EP3200218A1 (en) * 2016-01-31 2017-08-02 Soleras Advanced Coatings bvba Monitoring device in a vacuum environment
CN107393803A (zh) * 2017-07-28 2017-11-24 武汉华星光电技术有限公司 用于干蚀刻机台的下电极结构及干蚀刻机台

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105448774B (zh) * 2014-08-29 2019-11-29 北京北方华创微电子装备有限公司 一种等离子体加工设备
JP6377479B2 (ja) * 2014-09-29 2018-08-22 株式会社ディスコ プラズマエッチング装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1246724A (zh) * 1998-08-26 2000-03-08 三星电子株式会社 等离子体蚀刻设备和用这种设备制造的液晶显示模块
CN104851832A (zh) * 2014-02-18 2015-08-19 北京北方微电子基地设备工艺研究中心有限责任公司 一种固定装置、反应腔室及等离子体加工设备
CN105225989A (zh) * 2015-10-13 2016-01-06 京东方科技集团股份有限公司 等离子刻蚀机
EP3200218A1 (en) * 2016-01-31 2017-08-02 Soleras Advanced Coatings bvba Monitoring device in a vacuum environment
CN107393803A (zh) * 2017-07-28 2017-11-24 武汉华星光电技术有限公司 用于干蚀刻机台的下电极结构及干蚀刻机台

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