WO2019200760A1 - 一维材料透射电镜力 - 电耦合原位测试方法 - Google Patents

一维材料透射电镜力 - 电耦合原位测试方法 Download PDF

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WO2019200760A1
WO2019200760A1 PCT/CN2018/095793 CN2018095793W WO2019200760A1 WO 2019200760 A1 WO2019200760 A1 WO 2019200760A1 CN 2018095793 W CN2018095793 W CN 2018095793W WO 2019200760 A1 WO2019200760 A1 WO 2019200760A1
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sample
substrate
transmission electron
electron microscope
edge
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PCT/CN2018/095793
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English (en)
French (fr)
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张振宇
崔俊峰
陈雷雷
王博
郭东明
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大连理工大学
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Priority to US16/620,210 priority Critical patent/US11313774B2/en
Publication of WO2019200760A1 publication Critical patent/WO2019200760A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
    • G01N3/08—Investigating strength properties of solid materials by application of mechanical stress by applying steady tensile or compressive forces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/36—Embedding or analogous mounting of samples
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/30—Staining; Impregnating ; Fixation; Dehydration; Multistep processes for preparing samples of tissue, cell or nucleic acid material and the like for analysis
    • G01N1/31—Apparatus therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/38—Diluting, dispersing or mixing samples
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
    • G01N23/04—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/2202—Preparing specimens therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/2204—Specimen supports therefor; Sample conveying means therefore
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
    • G01N3/20—Investigating strength properties of solid materials by application of mechanical stress by applying steady bending forces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/30—Staining; Impregnating ; Fixation; Dehydration; Multistep processes for preparing samples of tissue, cell or nucleic acid material and the like for analysis
    • G01N2001/305—Fixative compositions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/36—Embedding or analogous mounting of samples
    • G01N2001/364—Embedding or analogous mounting of samples using resins, epoxy
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
    • G01N2203/0014—Type of force applied
    • G01N2203/0016—Tensile or compressive
    • G01N2203/0019—Compressive
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
    • G01N2203/0014—Type of force applied
    • G01N2203/0023—Bending
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
    • G01N2203/02—Details not specific for a particular testing method
    • G01N2203/026—Specifications of the specimen
    • G01N2203/0286—Miniature specimen; Testing on microregions of a specimen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/206—Modifying objects while observing
    • H01J2237/2062—Mechanical constraints
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2802—Transmission microscopes

Definitions

  • the present invention relates to a one-dimensional material transmission electron microscope force-electric coupling in-situ test method, in particular to a one-dimensional material in-situ nano-mechanical force-electric coupling test, belonging to the field of TEM in-situ nanomechanical testing.
  • One-dimensional materials have unique advantages in TEM in situ nanomechanics research. One important reason is that the microstructure of the material should be observed in TEM.
  • the thickness of the sample must be small enough. Generally, the thickness is less than 200 nm. In another dimension, the size is large enough to ensure that the sample can be fixed and withstand the force.
  • the one-dimensional material itself can meet these two requirements without additional processing, avoiding the damage and pollution caused by the processing. .
  • the method for in-situ testing of one-dimensional material transmission electron microscopy force-electric coupling is mainly to in-situ tensile analysis of the sample in the transmission electron microscope to observe the change of the electrical properties of the sample during the stretching process.
  • the invention designs and manufactures a multifunctional sample stage, which can perform in-situ compression, buckling and bending experiments on a sample in a transmission electron microscope, and can observe the change of the microstructure of the sample during the stress process and the electrical properties in real time.
  • the change, and a sample preparation method that does not damage the sample provides a one-dimensional material transmission electron microscope force-electric coupling in-situ test.
  • the device was fixed with epoxy conductive silver glue, placed in air for 4-8 hours to cure the epoxy conductive silver paste, and then the surface of the sample stage was coated with a layer of conductive silver paint.
  • the invention provides a simple and efficient sample preparation and testing method for the TEM-force-electric coupling in-situ observation experiment, which can perform compression, buckling and bending experiments on the sample, and can observe the material in the process of the force in real time. Changes in microstructure and changes in electrical properties enable one-dimensional material transmission electron microscopy force-electric coupling in-situ testing.
  • the sample is a nanowire, nanotube one-dimensional material.
  • the one-dimensional material has a large size in one dimension, which is convenient for fixing the sample, and other dimensions are small in size, and can be characterized by atomic scale under transmission electron microscopy.
  • the multifunctional sample stage is processed by an etching and laser stealth cutting method for a SOI chip, and the material thereof is a boron-doped P-type laurel, and the overall size is: 2-3 mm in length and 1.5-2 in width. Mm, 0.25-0.4 mm thick, processed by laser stealth cutting method; multi-functional sample stage consists of two parts, a substrate and a substrate, The substrate is 5-15 pm thick; firstly, the substrate is processed by etching to a trench having a width of 1.5-1.7 mm and a depth of 30-70 pm, and then etching a width of 4-100 ⁇ and a depth of 20-60 pm on the substrate.
  • the sample is fixed at the edge of the substrate perpendicular to the direction of the groove, so that the sample extends beyond the substrate length to the sample diameter by less than 10, for compression experiments; the sample is fixed at the edge of the substrate perpendicular to the groove direction, so that The sample protruded from the substrate length to the sample diameter by more than 10, and the buckling test was performed; the sample was fixed at the edge of the substrate parallel to the groove direction, and the sample was extended beyond the substrate length by more than 2 pm to perform a bending test.
  • the sample table material is made of boron-doped P-type silicon, which is processed by etching and laser stealth cutting method. Because the transmission electron mirror pole piece gap is small, the sample stage must also be processed. Small enough to be fixed on the in-situ TEM sample rod. Considering the convenience of the operation process, the overall size of the sample stage is 2-3 mm long and 1.5-2 wide.
  • the thickness is chosen to be 0.25-0.4 mm. Due to the small size, the traditional diamond blade cutting method is difficult to process due to blade size limitation and easy cracking.
  • the sample, and the laser stealth cutting method uses a laser beam with a high transmittance to change the structure of the single crystal silicon to form a starting point for segmentation, and then divides it into smaller chips by an external force, and the resulting chip edge is smooth and free. Cracking phenomenon, so the laser stealth cutting method is used; the sample stage inevitably causes the sample stage to tilt during processing or during installation, which will cause the sample to be observed to be blocked by the inclined sample stage, in order to reduce the tilt of the sample stage to the sample.
  • the sample stage is divided into two parts, a substrate and a substrate, and the substrate is processed by etching to a groove of 1.5-1.7 mm in width and 30-70 pm in depth, and the thickness of the substrate is 5-15-, and the substrate is engraved on the substrate.
  • the trench is etched 4-100 pm wide and 20-60 pm deep; the substrate trench is designed to compress, buck, and bend the sample.
  • the sample is fixed at the edge of the substrate perpendicular to the direction of the groove, so that the ratio of the length of the sample extending from the substrate to the diameter of the sample is less than 10, and the compression test can be performed; the sample is fixed at the edge of the substrate perpendicular to the direction of the groove, so that the sample is extended.
  • the ratio of the length of the substrate to the diameter of the sample is greater than 10, and the sample can be bent before the compressive stress limit is reached, so that the buckling test can be performed; the sample is fixed at the edge of the substrate parallel to the direction of the groove, and the bending test can be performed.
  • the carbon film on the transmission electron microscope copper mesh is removed, and the transmission electron microscope copper mesh is cut into two halves by a blade to form a semicircular copper mesh.
  • the transmission electron microscope copper mesh is used as the carrier of the sample.
  • the carbon film should be removed in advance, and it can be burned in the air through the inner flame of the lighter. Remove or soak it in alcohol solution for 30 min; remove more samples The edge of the copper mesh, as well as the easy removal of a single sample, cut the copper mesh along its center with a blade in half, taking half of the copper mesh.
  • the sample was dispersed in an alcohol solution and sonicated for 1-3 min, and then the sample was dropped on the edge of the semicircular copper mesh using a pipetting gun.
  • Alcohol is a kind of organic solvent which is more commonly used and has better dispersion effect. Therefore, the sample is placed in an alcohol solution, and the sample is dispersed by ultrasonic for l-3 min. The sample is dropped on the semicircular copper by a pipetting gun. The edge of the mesh makes it easy to remove a single sample from it.
  • sample diameter is greater than 100 nm
  • a single sample is moved from the edge of the semicircular copper mesh to the edge of the sample substrate substrate under a light microscope using a micromechanical device; if the sample diameter is less than 100 nm, a single focused ion beam system is used The sample was moved from the edge of the semi-circular copper mesh to the edge of the sample substrate.
  • a sample diameter greater than 100 nm a single sample can be observed under an optical microscope, so a single sample can be moved from the edge of the semi-circular copper mesh to the edge of the sample substrate substrate using a micro-moving device under an optical microscope; the sample diameter is less than 100 nm. It is difficult to observe a single sample under an optical microscope, so it is necessary to use a FIB robot to move a single sample from the edge of the semi-circular copper mesh to the edge of the sample substrate.
  • the sample is fixed with an epoxy resin conductive silver glue under a light microscope, and placed in air for 4-8 hours to cure the epoxy conductive silver paste, and then the substrate of the multifunctional sample stage is assembled.
  • the surface is coated with a layer of conductive silver paint.
  • the sample is fixed with epoxy resin conductive silver glue under the optical microscope by using a micromechanical device, and the epoxy resin conductive silver glue is used, which is convenient for dispensing and curing. 4-8 hours, sufficient operation time, on the other hand, its conductivity is good, the sample can be subjected to force-electric coupling test by TEM; after it is cured, the surface of the sample substrate is coated with a layer of conductive silver paint. , enhance the conductivity of the sample stage.
  • the sample stage to which the sample is fixed is fixed to the sample holder of the sample rod of the transmission electron microscope in situ nanomechanical system using a conductive silver paint.
  • Conductive silver paint allows current to pass from the sample rod into the sample.
  • the sample holder was fixed on the sample rod by screws, and the sample was subjected to force-electric coupling in situ observation under a transmission electron microscope using a flat-head boron-doped diamond pressure needle or a flat-tipped tungsten pressure needle.
  • the needle is used as the material in contact with the sample.
  • the needle In order to pass the current through the sample, the needle must be electrically conductive.
  • the force is applied to the sample with a flat-head boron-doped diamond needle or tungsten pressure. - Electrical coupling test.
  • the effect and benefit of the present invention is that a multi-purpose sample stage is designed and manufactured, and the sample is fixed with an epoxy resin conductive silver glue by a micromechanical device under an optical microscope, and the sample can be processed under a transmission electron microscope. Compression, buckling and bending experiments, and real-time observation of changes in the microstructure of the sample and changes in electrical properties, to achieve one-dimensional material transmission electron microscopy force-electric coupling in-situ test.
  • FIG. 1 is a schematic view of a designed multi-purpose sample stage, the sample being fixed near the groove at the edge of the sample stage substrate, and formed into a cantilever beam shape, as shown in FIG. 2b.
  • 2a is a schematic diagram of a one-dimensional material transmission electron microscope force-electric coupling in-situ test, the sample stage is processed by etching and laser stealth cutting technology for the SOI chip, and the material is boron-doped P-type silicon.
  • the sample is fixed on the edge of the sample substrate by epoxy resin conductive silver glue, and then formed into a cantilever beam shape, and then the sample substrate is coated with conductive silver paint to enhance the conductivity of the sample stage, and the flat needle is in contact with the sample.
  • a constant voltage can be applied to measure the current through the sample and measure the change in current during the strain of the sample.
  • FIG. 2b is an enlarged view of the block of Figure 1, if the sample is fixed at the edge of the substrate perpendicular to the direction of the groove, so that the ratio of the length of the sample extending from the substrate to the diameter of the sample is less than 10, as shown in position 1, The sample is subjected to a compression test; if the sample is fixed at the edge of the substrate perpendicular to the direction of the groove, the ratio of the length of the sample extending beyond the length of the substrate to the diameter of the sample is greater than 10, as shown in position 2, the sample may be subjected to a buckling test; If the sample is fixed at the edge of the substrate parallel to the direction of the groove, as shown in position 3, the sample may be subjected to a bending test;
  • FIG. 3a is a transmission electron micrograph of an actual compression test.
  • Figure 3b is a transmission electron micrograph of the buckling test.
  • FIG. 3c is a transmission electron micrograph of the bending test process.
  • FIG. 3d is a mechanical information and electrical information diagram of a compression test.
  • One-dimensional material transmission electron microscopy force-electric coupling in-situ test method designed and manufactured to be used to sample Multi-functional sample stage for compression, buckling and bending, using a micromechanical device to fix the sample with epoxy conductive silver glue under a light microscope, and coating the surface of the sample substrate with conductive silver paint, in transmission electron microscope
  • the sample can be subjected to force-electric coupling in situ test;
  • the sample is a nanowire, nanotube one-dimensional material
  • the multifunctional sample stage is processed by etching and laser stealth cutting technology for the SOI chip, and the material is boron-doped P-type silicon, and the overall size is: 2-3 mm long, wide 1.5-2 mm, thickness 0.25-0.4 mm, is processed by laser stealth cutting technology; the sample stage includes two parts of the substrate and the substrate, wherein the substrate is 5-15 pm thick; the substrate is first processed by etching A trench with a width of 1.5-1.7 mm and a depth of 30-70 pm is then etched into the trench by a width of 4-100 ⁇ and a depth of 20-60 pm.
  • the sample is fixed at the edge of the substrate perpendicular to the direction of the groove, so that the ratio of the length of the sample extending from the substrate to the diameter of the sample is less than 10, and the compression test can be performed; the sample is fixed at the edge of the substrate perpendicular to the direction of the groove, so that the sample is extended.
  • the ratio of the length of the substrate to the diameter of the sample is greater than 10, and the buckling test can be performed; the sample is fixed at the edge of the substrate parallel to the direction of the groove, so that the length of the sample extends beyond the substrate by more than 2 pm, and the bending test can be performed;
  • a single sample can be moved from the edge of the semicircular copper mesh to the edge of the sample substrate substrate under a light microscope using a micromechanical device; if the sample diameter is less than 100 nm, FIB can be utilized. Moving a single sample from the edge of the semi-circular copper mesh to the edge of the sample substrate;
  • the sample holder is fixed on the sample rod of the in-situ transmission electron microscope by screws, and the sample is subjected to force-electric coupling in-situ observation under a transmission electron microscope with a flat-head boron-doped diamond needle or a tungsten needle.
  • the sample stage is etched and laser invisible cutting technology
  • the material is processed by SOI chip, and the material is boron-doped P-type silicon.
  • the overall size is 2-2.1 mm, the width is 1.7-1.8 mm, and the thickness is 0.3-0.31 mm. It is processed by laser stealth cutting technology;
  • the groove width is 1.6-1.7 mm and the depth is 30-40 pm.
  • the green box corresponds to a substrate groove width of 60-63 pm and a depth of 20-23 pm.
  • the groove is etched.
  • the carbon film of the TEM copper mesh is burned off in the air through the internal flame of the lighter, and the blade is cut into two halves along the center of the copper mesh.
  • the sample was selected from single crystal 3 (: 4 (: nanowire) with a diameter of 100-300 nm and a length of 50-100 1 .
  • the sample was placed in an alcohol solution and ultrasonically dispersed for 2 min.
  • the sample was dropped by a pipette in a semi-circular transmission electron microscope.
  • the edge of the copper mesh Using a micro-moving device, a single nanowire is moved from the edge of the semi-circular TEM copper mesh to the edge of the sample substrate substrate under an optical microscope, and fixed with epoxy conductive silver glue. After an hour, the surface of the sample substrate is coated with a conductive silver paint.
  • Sample 1 is 239 nm in diameter and is fixed at the edge perpendicular to the groove direction, extending the length of the substrate 2047
  • compression test can be carried out, the compression process is shown in Figure 3a; sample 2 is 145 nm in diameter, fixed at the edge perpendicular to the groove direction, extending the length of the substrate by 6392 nm, can be subjected to buckling experiment, the buckling process is shown in the figure
  • the sample 3 is 250 nm in diameter and is fixed at the edge parallel to the groove direction.
  • the length of the substrate is extended to 3440 nm.
  • the bending experiment can be performed.
  • the bending process is shown in Figure 3c.
  • the sample can be loaded in real time during the experiment.
  • Figure 3d shows the load-displacement curve and current-displacement curve of the sample during compression, where the voltage is 10 V, and the pin is a boron-doped diamond flat-head press.

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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Investigating Strength Of Materials By Application Of Mechanical Stress (AREA)

Abstract

一维材料透射电镜力-电耦合原位测试方法，设计制造一种可用来对样品进行压缩、压曲以及弯曲的多功能样品台，将透射电镜铜网的碳膜去除，并经圆心将其切成两半，将样品在酒精中超声分散，用移液枪将样品滴在半圆形铜网边缘，在光学显微镜下利用微机械装置用环氧树脂导电银胶将单个样品固定在样品台基片边缘，并将样品台基片表面用导电银漆进行涂抹，在透射电镜中进行力-电耦合原位测试。提供了一种简单、高效的透射电镜力-电耦合原位观察实验的样品制备及测试方法，可对样品进行压缩、压曲以及弯曲实验，并且能够实时观测样品在受力过程中材料微观结构的变化以及电学性能的变化，实现了一维材料透射电镜力-电耦合原位测试。

Description

一维材料透射电镜力-电耦合原位测试方法 技术领域
[0001] 本发明涉及一维材料透射电镜力-电耦合原位测试方法， 特别涉及一维材料原 位纳米力学的力-电耦合测试， 属于透射电镜原位纳米力学测试领域。
背景技术
[0002] 随着航空、 航天、 深空探测等国家重大工程的建设和发展， 对高性能装备的性 能提出了一系列更高的要求， 而高性能装备的性能取决于高性能零件的性能， 一般要求表面达到亚纳米级表面粗糙度和纳米级平面度、 表面 /亚表面无损伤， 传统的加工方法很难达到这种要求， 并且产生的表面 /亚表面损伤往往会影响材 料的电学性能， 从而影响整个器件的性能， 所以需要开发新的超精密加工装备 及加工工艺。 要开发新的超精密加工装备及加工工艺， 需要对加工机理进行了 解， 而机械加工即是对材料施加载荷， 因此需要研究材料在受载时的变化过程 及机理， 在透射电镜中从原子尺度对其进行探索是一个非常重要的手段。 传统 的研究方法一般是分别对材料加载前和加载后在透射电镜中进行观察， 而不能 实时的观察材料在受载时的变化过程， 所以很难对其机理进行解释。 因此近几 年发展了一种透射电镜原位纳米力学测试技术， 它可以实时观察材料在受载时 的变化过程， 并且能够测量样品的电学性能， 所以， 透射电镜力-电耦合原位测 试是一种研究材料变形及断裂机理的重要的测试方法。
[0003] 一维材料在透射电镜原位纳米力学研究中具有独特的优势， 其中一个重要的 原因是在透射电镜中要观察材料的微观结构， 样品厚度必须足够小， 一般要求 厚度小于 200 nm， 而在另外一个维度方向上尺寸要足够大， 保证样品能够固定 而承受力的作用， 一维材料本身无需额外的加工处理便能满足这两个要求， 避 免了加工过程中带来的损伤和污染。 目前关于一维材料透射电镜力 -电耦合原位 测试的方法， 主要是对样品在透射电镜中进行原位拉伸， 观察样品在拉伸过程 中其电学性能的变化， 该方法只能使样品承受一种拉伸应力， 并且样品制备及 其困难， 需要利用聚焦离子束系统 （FIB） 进行焊接， 而 FIB焊接过程中对样品 的损伤和 Pt污染对样品的力学性能、 电学性能以及微观结构的观察都有重要的影 响。 因此， 设计开发一种能够对一维材料在透射电镜中进行原位压缩、 压曲以 及弯曲实验的力-电耦合测试， 同时又对样品无污染、 无损的测试方法是十分重 要的。
发明概述
技术问题
[0004] 本发明设计制造了一种多功能样品台， 可对样品在透射电镜中进行原位压缩、 压曲以及弯曲实验， 可实时观测样品在受力过程中材料微观结构的变化以及电 学性能的变化， 并且提供了一种对样品无损伤的样品制备方法， 实现了一维材 料透射电镜力-电耦合原位测试。
问题的解决方案
技术解决方案
[0005] 本发明的技术方案：
[0006] 一维材料透射电镜力-电耦合原位测试方法， 设计制造一种多功能样品台， 将 透射电镜铜网的碳膜去除， 并经圆心将其切成两半， 将样品在酒精中超声分散 ， 用移液枪将样品滴在半圆形铜网边缘； 在光学显微镜下或在 FIB中将单个样品 从半圆形铜网边缘移至样品台边缘； 在光学显微镜下利用微机械装置将样品用 环氧树脂导电银胶进行固定， 在空气中放置 4-8小时使环氧树脂导电银胶固化， 然后将样品台表面涂一层导电银漆。 本发明提供了一种简单、 高效的透射电镜 力 -电耦合原位观察实验的样品制备及测试方法， 可对样品进行压缩、 压曲以及 弯曲实验， 并且能够实时观测样品在受力过程中材料微观结构的变化以及电学 性能的变化， 实现了一维材料透射电镜力 -电耦合原位测试。
[0007] 所述的样品为纳米线、 纳米管一维材料。 一维材料在一个维度方向上尺寸较大 ， 方便对样品进行固定， 其他维度方向尺寸较小， 可以在透射电镜下对其进行 原子尺度的微观结构表征。
[0008] 所述的多功能样品台是利用刻蚀以及激光隐形切割方法对 SOI芯片加工而成， 其材料为掺硼的 P型桂， 整体尺寸为： 长 2-3 mm, 宽 1.5-2 mm, 厚 0.25-0.4 mm, 通过激光隐形切割方法加工而成； 多功能样品台包括衬底和基片两部分， 其中 基片厚 5-15 pm; 首先通过刻蚀将衬底加工出宽 1.5-1.7 mm， 深 30-70 pm的沟槽， 然后在基片上刻蚀出宽 4-100―， 深 20-60 pm的沟槽； 样品固定在垂直于沟槽方 向的基片边缘， 使样品伸出基片长度与样品直径之比小于 10, 进行压缩实验； 样品固定在垂直于沟槽方向的基片边缘， 使样品伸出基片长度与样品直径之比 大于 10, 进行压曲实验； 样品固定在平行于沟槽方向的基片边缘， 使样品伸出 基片长度大于 2 pm， 进行弯曲实验。 为使样品台导电， 并且便于加工， 样品台 材料选用掺硼的 P型硅， 是利用刻蚀以及激光隐形切割方法对 SOI芯片加工而成 ; 由于透射电镜极靴间隙较小， 样品台也必须足够小才能够固定在原位透射电 镜样品杆上， 考虑到操作过程的方便性， 样品台整体尺寸选择为长 2-3 mm, 宽 1.5-2
mm, 为了使样品在透射电镜中能够达到共心高度， 其厚度选择为 0.25-0.4 mm， 由于尺寸较小， 传统的金刚石刀片切割方法由于刀片尺寸限制以及容易出现崩 裂现象， 很难加工较小样品， 而激光隐形切割方法利用穿透率较高的激光束使 单晶硅结构发生变化， 形成分割用的起点， 然后通过外力将其分割成较小的芯 片， 制成的芯片边缘平滑且无崩裂现象， 所以利用激光隐形切割方法； 样品台 在加工或在安装过程中不可避免会导致样品台倾斜， 会造成要观察的样品被倾 斜的样品台遮挡住， 为了减小样品台倾斜对样品的观测， 将样品台分为衬底和 基片两部分， 并通过刻蚀将衬底加工出宽 1.5-1.7 mm， 深 30-70 pm的沟槽， 基片 厚度 5-15—， 基片上刻蚀出宽 4-100 pm， 深 20-60 pm的沟槽； 基片沟槽是为了 实现对样品进行压缩、 压曲以及弯曲的功能。 样品固定在垂直于沟槽方向的基 片边缘， 使样品伸出基片长度与样品直径之比小于 10, 可进行压缩实验； 样品 固定在垂直于沟槽方向的基片边缘， 使样品伸出基片长度与样品直径之比大于 1 0, 样品在达到压缩应力极限之前能够发生弯曲， 所以可进行压曲实验； 样品固 定在平行于沟槽方向的基片边缘， 可进行弯曲实验。
[0009] 将透射电镜铜网上的碳膜去除， 并将透射电镜铜网经圆心用刀片切成两半， 成 半圆形铜网。 透射电镜铜网作为样品的载体， 为避免铜网上面的碳膜与样品交 缠在一起， 便于将单个样品从上面取出， 应预先将碳膜去除， 可在空气中通过 打火机内焰将其烧掉或在酒精溶液中超声 30 min将其去除； 为使更多样品分布在 铜网边缘， 以及便于取出单个样品， 将铜网沿其圆心用刀片切成两半， 取其中 半个铜网。
[0010] 将样品分散在酒精溶液中， 并超声 1-3 min， 然后利用移液枪将样品滴在半圆形 铜网边缘。 酒精是一种较常用， 并且分散效果较好的一种有机溶剂， 所以将样 品放入酒精溶液中， 并且超声 l-3 min， 使样品分散； 利用移液枪将样品滴在半 圆形铜网边缘， 便于从中取出单个样品。
[0011] 若样品直径大于 100 nm， 利用微机械装置在光学显微镜下将单个样品从半圆形 铜网边缘移至样品台基片边缘； 若样品直径小于 100 nm， 利用聚焦离子束系统 将单个样品从半圆形铜网边缘移至样品台基片边缘。 样品直径大于 100 nm， 在 光学显微镜下可以观察到单个样品， 所以可以在光学显微镜下利用微移动装置 将单个样品从半圆形铜网边缘移至样品台基片边缘； 样品直径小于 100 nm， 在 光学显微镜下很难观测到单个样品， 所以需要利用 FIB机械手将单个样品从半圆 形铜网边缘移至样品台基片边缘。
[0012] 在光学显微镜下利用微机械装置将样品用环氧树脂导电银胶进行固定， 在空气 中放置 4-8小时， 使环氧树脂导电银胶固化， 然后将多功能样品台的基片表面涂 一层导电银漆。 为避免 FIB焊接过程中对样品的损伤和污染， 利用微机械装置在 光学显微镜下将样品用环氧树脂导电银胶进行固定， 采用环氧树脂导电银胶， 一方面其便于进行滴胶， 固化时间 4-8小时， 有足够的操作时间， 另一方面其导 电性好， 可以在透射电镜对样品进行力-电耦合测试； 待其固化后， 将样品台基 片表面涂一层导电银漆， 增强样品台的导电性。
[0013] 利用导电银漆将固定有样品的样品台固定在透射电镜原位纳米力学系统样品杆 的样品座上。 导电银漆可以使电流从样品杆通入样品中。
[0014] 将样品座利用螺钉固定在样品杆上， 用平头掺硼金刚石压针或平头钨压针在透 射电镜下对样品进行力-电耦合原位观察实验。 压针作为与样品接触的材料， 为 使电流通过样品， 压针必须导电性要好， 同时为了对样品进行压缩、 压曲或者 弯曲， 所以使用用平头掺硼金刚石压针或者钨压针对样品进行力-电耦合测试。 发明的有益效果
有益效果 [0015] 本发明的效果和益处是设计制造了一种多功能样品台， 并且在光学显微镜下采 用微机械装置对样品用环氧树脂导电银胶进行固定， 可实现在透射电镜下对样 品进行压缩、 压曲以及弯曲实验， 并且实时观测样品微观结构的变化以及电学 性能的变化， 实现了一维材料透射电镜力 -电耦合原位测试。
对附图的简要说明
附图说明
[0016] 图 1是设计的多功能样品台的示意图， 样品固定在样品台基片边缘的沟槽附近 ， 制成悬臂梁状， 如图 2b所示。
[0017] 图 2a是一维材料透射电镜力-电耦合原位测试的原理图， 样品台是利用刻蚀以 及激光隐形切割技术对 SOI芯片加工而成， 其材料为掺硼的 P型硅， 利用环氧树 脂导电银胶将样品固定在样品台基片边缘， 制成悬臂梁状， 然后将样品台基片 利用导电银漆进行涂抹， 增强样品台的导电性， 平头压针在接触到样品并对样 品施加载荷的过程中， 可以通入一个恒定电压， 测出通过样品的电流并测出在 样品发生应变过程中电流的变化， 平头压针固定在传感器上， 传感器可以测得 压针所执行的力和位移， 从而可以获得样品的应力 -应变曲线。 图 2b是图 1方框所 示的放大图， 若样品固定在垂直于沟槽方向的基片边缘， 使样品伸出基片长度 与样品直径之比小于 10, 如位置 1所示样品， 可对样品进行压缩实验； 若样品固 定在垂直于沟槽方向的基片边缘， 使样品伸出基片长度与样品直径之比大于 10 ， 如位置 2所示样品， 可对样品进行压曲实验； 若样品固定在平行于沟槽方向的 基片边缘， 如位置 3所示样品， 可对样品进行弯曲实验；
[0018] 图 3a是实际压缩测试的透射电镜照片。
[0019] 图 3b是压曲测试的透射电镜照片。
[0020] 图 3c是弯曲测试过程的透射电镜照片。
[0021] 图 3d是压缩测试的力学信息和电学信息图。
发明实施例
本发明的实施方式
[0022] 以下结合附图和技术方案， 进一步说明本发明的具体实施方式。
[0023] 一维材料透射电镜力-电耦合原位测试方法， 设计制造了一种可用来对样品进 行压缩、 压曲以及弯曲的多功能样品台， 利用微机械装置在光学显微镜下对样 品用环氧树脂导电银胶进行固定， 并将样品台基片表面用导电银漆进行涂抹， 在透射电镜下可对样品进行力 -电耦合原位测试；
[0024] ( 1) 所述的样品为纳米线、 纳米管一维材料；
[0025] (2) 所述的多功能样品台是利用刻蚀以及激光隐形切割技术对 SOI芯片加工而 成， 其材料为掺硼的 P型硅， 整体尺寸为： 长 2-3 mm， 宽 1.5-2 mm， 厚 0.25-0.4 mm, 是通过激光隐形切割技术加工而成； 样品台包括衬底和基片两部分， 其中 基片厚 5-15 pm; 首先通过刻蚀将衬底加工出宽 1.5-1.7 mm， 深 30-70 pm的沟槽， 然后在基片上刻蚀出宽 4-100―， 深 20-60 pm的沟槽。 样品固定在垂直于沟槽方 向的基片边缘， 使样品伸出基片长度与样品直径之比小于 10, 可进行压缩实验 ; 样品固定在垂直于沟槽方向的基片边缘， 使样品伸出基片长度与样品直径之 比大于 10, 可进行压曲实验； 样品固定在平行于沟槽方向的基片边缘， 使样品 伸出基片长度大于 2 pm， 可进行弯曲实验；
[0026] (3) 将透射电镜铜网上面的碳膜去除， 并将铜网经圆心用刀片切成两半；
[0027] (4) 将样品分散在酒精溶液中， 并超声 l-3 min， 然后利用移液枪将样品滴在 半圆形铜网边缘；
[0028] (5) 若样品直径大于 100 nm， 可利用微机械装置在光学显微镜下将单个样品 从半圆形铜网边缘移至样品台基片边缘； 若样品直径小于 100 nm， 可利用 FIB将 单个样品从半圆形铜网边缘移至样品台基片边缘；
[0029] (6) 利用微机械装置在光学显微镜下将样品用环氧树脂导电银胶进行固定， 在空气中放置 4-8小时使环氧树脂导电银胶固化， 然后将样品台基片表面涂一层 导电银漆， 增强样品台导电性；
[0030] (7) 利用导电银漆将固定有样品的样品台粘在原位透射电镜样品杆的样品座 上；
[0031] (8) 将样品座利用螺钉固定在原位透射电镜样品杆上， 用平头掺硼金刚石压 针或钨压针在透射电镜下对样品进行力-电耦合原位观察实验。
实施例
[0032] 设计加工多功能样品台， 如图 1所示， 样品台是利用刻蚀以及激光隐形切割技 术对 SOI芯片加工而成， 其材料为掺硼的 P型硅， 总体尺寸长 2-2.1 mm， 宽 1.7-1.8 mm, 厚 0.3-0.31 mm， 是通过激光隐形切割技术加工而成； 衬底沟槽宽 1.6-1.7 mm, 深 30-40 pm， 绿色方框对应的基片沟槽宽 60-63 pm， 深 20-23 pm， 沟槽通 过刻蚀加工而成。
[0033] 在空气中通过打火机内焰将透射电镜铜网的碳膜烧掉， 用刀片沿铜网中心将其 切成两半。 样品选取直径 100-300 nm、 长度 50-100 1的单晶3（：4（：纳米线， 将 样品放入酒精溶液中超声分散 2 min， 用移液枪将样品滴在半圆形透射电镜铜网 边缘。 利用微移动装置在光学显微镜下将单根纳米线从半圆形透射电镜铜网边 缘移至样品台基片边缘， 并用环氧树脂导电银胶进行固定。 在空气中静置 5小时 之后， 利用导电银漆对样品台基片表面进行涂抹。 样品 1直径 239 nm， 固定在垂 直于沟槽方向的边缘， 伸出基片长度 2047
nm, 可进行压缩实验， 压缩过程如图 3a所示； 样品 2直径 145 nm， 固定在垂直于 沟槽方向的边缘， 伸出基片长度 6392 nm， 可进行压曲实验， 压曲过程如图 3b所 示； 样品 3直径 250 nm， 固定在平行于沟槽方向的边缘， 伸出基片长度 3440 nm ， 可进行弯曲实验， 弯曲过程如图 3c所示； 实验过程中可实时获得样品受载过程 中的微观结构变化以及电学性能变化， 图 3d所示为样品在压缩过程中的载荷-位 移曲线和电流 -位移曲线， 其中电压为 10 V， 压针为掺硼金刚石平头压针， 可以 看出样品所受载荷越大， 通过样品的电流越大， 即样品导电性越好， 测得样品 的压阻系数为 -3x10 1Q Pa -1。

Claims

权利要求书 [权利要求 1] 一维材料透射电镜力-电耦合原位测试方法， 设计制造一种可用来对 样品进行压缩、 压曲以及弯曲的多功能样品台， 在光学显微镜下利用 微机械装置对样品用环氧树脂导电银胶进行固定， 并将多功能样品台 基片表面用导电银漆进行涂抹， 在透射电镜下对样品进行力-电耦合 原位测试， 并且观察样品微观结构的变化过程， 其特征在于：
( 1) 所述的样品为纳米线、 纳米管一维材料；
(2) 所述的多功能样品台是利用刻蚀以及激光隐形切割方法对 SOI 芯片加工而成， 其材料为掺硼的 P型硅， 整体尺寸为： 长 2-3 mm, 宽 1.5-2 mm， 厚 0.25-0.4 mm， 通过激光隐形切割方法加工而成 ; 多功能样品台包括衬底和基片两部分， 其中基片厚 5-15 [im; 首先 通过刻蚀将衬底加工出宽 1.5-1.7 mm， 深 30-70 pm的沟槽， 然后在基 片上刻蚀出宽 4-100 pm， 深 20-60 pm的沟槽； 样品固定在垂直于沟槽 方向的基片边缘， 使样品伸出基片长度与样品直径之比小于 10, 进行 压缩实验； 样品固定在垂直于沟槽方向的基片边缘， 使样品伸出基片 长度与样品直径之比大于 10, 进行压曲实验； 样品固定在平行于沟槽 方向的基片边缘， 使样品伸出基片长度大于 2 pm， 进行弯曲实验；
(3) 将透射电镜铜网上的碳膜去除， 并将透射电镜铜网经圆心用刀 片切成两半， 成半圆形铜网；
(4) 将样品分散在酒精溶液中， 并超声 l-3 min， 然后利用移液枪将 样品滴在半圆形铜网边缘；
(5) 若样品直径大于 100 nm， 利用微机械装置在光学显微镜下将单 个样品从半圆形铜网边缘移至样品台基片边缘； 若样品直径小于 100 nm, 利用聚焦离子束系统将单个样品从半圆形铜网边缘移至样品台 基片边缘；
(6) 在光学显微镜下利用微机械装置将样品用环氧树脂导电银胶进 行固定， 在空气中放置 4-8小时， 使环氧树脂导电银胶固化， 然后将 多功能样品台的基片表面涂一层导电银漆；
(7) 利用导电银漆将固定有样品的样品台固定在透射电镜原位纳米 力学系统样品杆的样品座上；
(8) 将样品座利用螺钉固定在样品杆上， 用平头掺硼金刚石压针或 平头钨压针在透射电镜下对样品进行力-电耦合原位观察实验。
PCT/CN2018/095793 2018-04-18 2018-07-16 一维材料透射电镜力 - 电耦合原位测试方法 WO2019200760A1 (zh)

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