WO2019196351A1 - 光伏发电瓦及光伏发电系统 - Google Patents

光伏发电瓦及光伏发电系统 Download PDF

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Publication number
WO2019196351A1
WO2019196351A1 PCT/CN2018/107658 CN2018107658W WO2019196351A1 WO 2019196351 A1 WO2019196351 A1 WO 2019196351A1 CN 2018107658 W CN2018107658 W CN 2018107658W WO 2019196351 A1 WO2019196351 A1 WO 2019196351A1
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WIPO (PCT)
Prior art keywords
photovoltaic power
tile
power generation
battery
cell
Prior art date
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PCT/CN2018/107658
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English (en)
French (fr)
Inventor
朱彦君
彭富强
孙书龙
田金虎
Original Assignee
广东汉能薄膜太阳能有限公司
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Publication of WO2019196351A1 publication Critical patent/WO2019196351A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S20/00—Supporting structures for PV modules
    • H02S20/20—Supporting structures directly fixed to an immovable object
    • H02S20/22—Supporting structures directly fixed to an immovable object specially adapted for buildings
    • H02S20/23—Supporting structures directly fixed to an immovable object specially adapted for buildings specially adapted for roof structures
    • H02S20/25—Roof tile elements
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S20/00—Supporting structures for PV modules
    • H02S20/20—Supporting structures directly fixed to an immovable object
    • H02S20/22—Supporting structures directly fixed to an immovable object specially adapted for buildings
    • H02S20/26—Building materials integrated with PV modules, e.g. façade elements
    • E—FIXED CONSTRUCTIONS
    • E04—BUILDING
    • E04D—ROOF COVERINGS; SKY-LIGHTS; GUTTERS; ROOF-WORKING TOOLS
    • E04D1/00—Roof covering by making use of tiles, slates, shingles, or other small roofing elements
    • E04D1/12—Roofing elements shaped as plain tiles or shingles, i.e. with flat outer surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02021—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/044—PV modules or arrays of single PV cells including bypass diodes
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S30/00—Structural details of PV modules other than those related to light conversion
    • H02S30/20—Collapsible or foldable PV modules
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H02S40/30—Electrical components
    • H02S40/34—Electrical components comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
    • Y02A30/00—Adapting or protecting infrastructure or their operation
    • Y02A30/60—Planning or developing urban green infrastructure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present disclosure relates to the field of photovoltaic power generation technologies, and in particular, to a photovoltaic power generation tile and a photovoltaic power generation system.
  • photovoltaic power generation technology With the maturity of photovoltaic power generation technology, people gradually apply photovoltaic power generation technology to the construction field, forming a photovoltaic integrated building technology (BIPV) that integrates photovoltaic power generation and building technology, making traditional buildings have photovoltaics. Power generation function. For example, photovoltaic power generation technology is applied to tiles to form solar power tiles with photovoltaic power generation functions.
  • BIPV photovoltaic integrated building technology
  • the present disclosure provides a photovoltaic power generation tile including a tile base, a first battery piece, and a second battery piece, the tile base body including a flat plate portion and at least one connected to the flat plate portion
  • the ridge portion is disposed on an outer surface of the flat plate portion
  • the second battery sheet is disposed on an outer surface of the at least one of the ridge portions and matches an outer surface of the at least one of the ridge portions.
  • the first cell is a flat cell and the second cell is a flexible cell.
  • the first cell and the second cell are connected in parallel.
  • the terminal voltage of the first cell and the terminal voltage of the second cell are equal.
  • a bypass module is further included, the bypass module being coupled in parallel with the first battery and the second battery.
  • the first anti-reverse charging module and the second anti-reverse charging module are further included; the first battery chip is connected in series with the first anti-reverse charging module, and the positive electrode of the first battery chip is The first anti-reverse charging module is connected; the second battery chip is connected in series with the second anti-reverse charging module, and a positive pole of the second battery chip is connected to the second anti-reverse charging module.
  • a junction box is further disposed, the junction box is disposed on an inner surface of the flat portion, and the first anti-reverse charging module, the second anti-reverse charging module, and the bypass module are disposed on the wiring Inside the box.
  • the first cell sheet includes a plurality of sub-first cell sheets connected in series.
  • the second cell sheet includes a plurality of sets of sub-second cell sheets connected in parallel
  • the second anti-reverse charging module includes a plurality of sub-second anti-reverse charging modules, the plurality of sub-second anti-blocking modules
  • the anti-charge module is connected in series with the plurality of sub-second cells, and the positive electrodes of the plurality of sub-second cells are connected to the plurality of sub-second anti-reverse modules in a one-to-one correspondence.
  • a plurality of sets of the sub-second cell sheets are disposed on an outer surface of the ridge along a length direction of the tile base.
  • a length difference of a length of the first battery piece along a length direction of the tile base body and a length of the second battery piece along a length direction of the tile base body is 50 mm or less.
  • the photovoltaic tile further includes a battery encapsulation layer for encapsulating the first cell and the second cell.
  • Yet another aspect of the present disclosure provides a photovoltaic power generation system comprising the photovoltaic power generation tile of any of the above embodiments.
  • each of the photovoltaic tiles is connected in series.
  • each of the photovoltaic power tiles includes at least two ridges, at least two of the ridges including a first ridge and a second ridge, the first ridge and the The second ridges are respectively connected to two ends of the tile base body included in the photovoltaic power generation tile along the width direction thereof; along the width direction of the tile base body, adjacent to the two photovoltaic power generation tiles, wherein An outer surface of the second ridge portion included in one of the photovoltaic power generation tiles is in contact with an inner surface of the first ridge portion included in the other photovoltaic power generation tile; along the length direction of the tile base body, two adjacent The photovoltaic power tiles are lapped together.
  • FIG. 1 is a top plan view of a photovoltaic power generation tile provided by some embodiments of the present disclosure
  • FIG. 2 is a perspective view of the photovoltaic power generation tile shown in Figure 1;
  • FIG. 3 is a schematic view showing the position of a junction box of the photovoltaic power generation tile shown in FIG. 1 in a tile base;
  • FIG. 4 is a schematic view showing the position of a bus bar in the photovoltaic base tile of FIG. 1 in a tile base;
  • FIG. 5 is a schematic diagram of a first battery chip and a second battery chip packaged in a battery encapsulation layer in the photovoltaic power generation tile shown in FIG. 1;
  • Figure 6 is a circuit diagram of the anti-reverse charging circuit in the photovoltaic power generation tile shown in Figure 1;
  • Figure 7 is a perspective view of a photovoltaic power generation tile provided by other embodiments of the present disclosure.
  • FIG. 8 is a first circuit diagram of an anti-reverse charging path in the photovoltaic power generation tile shown in FIG. 7;
  • FIG. 9 is a second circuit diagram of an anti-reverse charging path in the photovoltaic power generation tile shown in FIG. 7;
  • FIG. 10 is a schematic structural diagram of a photovoltaic power generation system according to some embodiments of the present disclosure.
  • the solar power tile includes a tile substrate and a crystalline silicon cell disposed on the light receiving surface of the tile substrate, and the silicon solar cell is used to absorb solar energy and convert it into electrical energy for use by the user.
  • the edge portion of the tile base of each solar power tile is generally a curved or profiled structure to achieve a lap or hardware connection between the two solar power tiles, and the crystalline silicon battery
  • the sheet is usually flat and inflexible, so that the crystalline silicon cell can only be formed in a planar area of the tile substrate, resulting in a small occupational area of the crystalline silicon cell in the tile substrate, and the surface of the tile substrate cannot be fully utilized.
  • the utilization rate of the tile matrix of the photovoltaic power generation tile is low.
  • some embodiments of the present disclosure provide a photovoltaic power generation tile including a tile base 1, a first battery piece 2, and a second battery piece 3;
  • the sheet base 1 may be a metal tile, a clay tile, a cement tile, a ceramic tile or a glass tile, etc., and will not be enumerated here.
  • the tile base 1 includes a flat plate portion 10 and at least one ridge portion connected to the flat plate portion 10; the flat plate portion 10 and the at least one ridge portion may be of a unitary structure or a split structure, but the flat plate portion 10 is considered in view of ease of manufacture. And at least one ridge is a one-piece structure.
  • the number of the ridges may be one, two, or three, and is not specifically limited herein. In some embodiments, as shown in FIGS. 1 to 3, the number of the ridges is two, and the two ridges are the first ridge portion 11 and the second ridge portion 12, respectively.
  • the outer surface of the flat plate portion 10 is formed with a first battery piece 2, and an outer surface of at least one ridge portion is formed with a second battery piece 3 matching the outer surface of the ridge portion; the ridge portion may be disposed at the edge of the tile base body 1.
  • the raised-shaped lap joint may also be a strip-shaped protrusion provided in the middle of the tile base 1 and extending along the length direction of the tile base 1 (that is, the direction X shown in FIG. 1 or FIG. 2).
  • the outer surface of the ridge is in a convex state, and the inner surface of the ridge is in a concave state.
  • the tile base body 1 is made of floating flat glass as an example.
  • Step S100 providing a float flat glass; tempering the float flat glass and thermally bending the tile base 1 according to a preset tile structure, so that the tile base 1 includes the flat plate portion 10 and the flat plate portion 10 At least one ridge;
  • Step S200 forming a first battery sheet 2 on the outer surface of the flat plate portion 10, and forming a second battery sheet 3 on the outer surface of the at least one ridge portion, so that when photovoltaic power generation, the first battery sheet 2 and the second battery sheet 3 will simultaneously Solar energy is converted into electricity.
  • the inner surface of the flat plate portion 10 and the at least one raised portion of the tile base 1 included in the photovoltaic power generation tile are opposed to the beam and the purlin to ensure that it is formed outside the flat plate portion 10.
  • the first cell sheet 2 of the surface and the second cell sheet 3 formed on the outer surface of at least one of the ridges are disposed toward the light.
  • the tile base body 1 includes a flat plate portion 10 and at least one ridge portion connected to the flat plate portion 10, and is formed on the outer surface of the at least one ridge portion.
  • the second cell 3 is matched to the outer surface of the ridge, and thus, in some embodiments, the second cell 3 is a flexible cell such that the second cell 3 can be utilized with the flexible nature of the second cell 3.
  • the inner surface of the flat portion 10 in the embodiment of the present disclosure is provided with a mounting block 101 by bonding or otherwise to cover the battens of the roof by using the mounting block 101. on.
  • the mounting block 101 is disposed at a middle portion of the flat plate portion 10 in the width direction of the tile base 1 (that is, the direction Y shown in FIG. 1 or FIG. 2) to prevent the flat portion 10 from being stressed.
  • the problem that the tile base 1 is inclined and the stress distribution is uneven is generated, thereby ensuring the service life of the tile base 1.
  • the width W 1 of the mounting block 101 is 1/3 to 1/2 of the width W 2 of the flat portion 10.
  • width W 1 of the mounting block 101 refers to the dimension of the mounting block 101 in the width direction of the tile base 1
  • the width W 2 of the flat portion 10 refers to the width of the flat portion 10 in the tile base 1. The size in the direction.
  • the mounting height of the block 101 should be less than the length of the mounting block 101 L 1, so that the mounting block 101 having a Large structural strength.
  • the height of the mounting block 101 refers to the dimension of the mounting block 101 in the direction perpendicular to the plane of the flat plate portion 10.
  • the length L 1 of the mounting block 101 refers to the length of the mounting block 101 at the tile base 1. The size in the direction.
  • the position of the mounting block 101 on the flat portion 10 is affected by the battens.
  • the flat portion 10 includes a first end a and a second end b disposed opposite each other along the length direction of the tile base 1, and the mounting block 101 is adjacent to one end of the first end a.
  • the distance L 2 from the end surface of the first end a of the flat plate portion 10 is not less than 30 mm, and the height of the mounting block 101 is not less than 20 mm, so that it can be mated with the battens.
  • the mounting block 101 may be one or more, and is not specifically limited herein.
  • the plurality of mounting blocks 101 are sequentially spaced apart along the width direction of the tile base 1, and the midpoint of the line between the two mounting blocks 101 at the two ends of the plurality of mounting blocks 101 is located.
  • the flat plate portion 10 is along the middle portion in the width direction of the tile base 1.
  • the plurality of mounting blocks 101 may be arranged at equal intervals or may be arranged at non-equal intervals, and are not specifically limited herein. In some embodiments, the plurality of mounting blocks 101 are equally spaced.
  • the first battery piece 2 is a flat battery piece, so that the first battery piece 2 matches the flat plate portion 10 included in the tile base 1, and the flat battery can be It is a flexible battery or a rigid battery.
  • the second battery piece 3 described above is a raised battery piece that matches the ridge portion included in the tile base 1.
  • the raised cell sheet may be a flexible cell sheet having a good bending property, or may be a rigid cell sheet pre-formed to match the shape of the ridge portion.
  • the rigid battery sheet may be a crystalline silicon battery sheet, and the flexible battery sheet may be a easily bendable battery sheet such as a CIGS thin film solar battery sheet.
  • the light irradiation angles of the first cell sheet 2 and the second cell sheet 3 are inconsistent, resulting in the outer surface of the ridge portion.
  • the light intensity of the unit cell of the second cell sheet 3 is lower than the light intensity of the first cell sheet 2 of the outer surface of the flat plate portion 10, so that the current generated by the second cell sheet 3 on the outer surface of the bump portion is smaller than that of the outer surface of the flat plate portion 10.
  • the smaller current generated by the second cell 3 has a current limiting effect on the larger current generated by the first cell 2, so that the series circuit
  • the total current is equal to the smaller current generated by the second cell 3, so that the smaller current generated by the second cell 3 consumes a larger current generated by the first cell 2 in the form of heat, resulting in waste of energy, and solar cell output.
  • the change in voltage is greatly affected by the light.
  • the first battery piece 2 and the second battery piece 3 are connected in parallel between the positive electrode terminal U+ and the negative terminal U-, so that the total current value of the parallel circuit output is obtained.
  • the photovoltaic power generation tile provided by the embodiment of the present disclosure further includes a bypass module S3 , and the bypass module S3 is connected in parallel with the first battery piece 2 and the second battery piece 3 .
  • the current existing in the circuit flows directly through the bypass module S3, so that in the case where there is current in the circuit, current is prevented from flowing into the first battery.
  • the sheet 2 and the second battery sheet 3 cause heat generation problems of the first battery piece 2 and the second battery piece 3 to fundamentally solve the power consumption caused by the heat generation of the first battery piece 2 and the second battery piece 3.
  • the photovoltaic power generation tile provided by the embodiment of the present disclosure further includes a first anti-reverse charging module S1 and a second anti-reverse charging module S2.
  • the first battery piece 2 is connected in series with the first anti-reverse charging module S1, and the positive electrode of the first battery chip 2 is connected to the first anti-reverse charging module S1.
  • the positive electrode terminal U+ passes through the first anti-reverse charging module S1 and
  • the first battery piece 2 is electrically connected, so that when the first battery piece 2 is unusable due to damage or being blocked, the first anti-reverse charging module S1 is used to avoid charging the first battery piece 2 when there is a current in the anti-reverse charging path. .
  • the second battery chip 3 and the second anti-reverse charging module S2 are connected in series, and the positive pole of the second battery chip 3 is connected with the second anti-reverse charging module S2, so that the positive terminal U+ passes the second anti-reverse
  • the charging module S2 is electrically connected to the second battery chip 3, so that when the second battery chip 3 is unusable due to damage or being blocked, the second anti-reverse charging module S2 is used to avoid the presence of current in the anti-recharging circuit to the second The battery chip 3 is charged. Therefore, in the embodiment of the present disclosure, the second battery chip 3 and the first battery chip 2 are connected in parallel, and the first anti-reverse charging module S1 is added to protect the first battery chip 2, and the second anti-reverse charging module is added.
  • the first anti-reverse charging module S1 or the second anti-reverse charging module S2 can avoid the current existing in the circuit to the correspondingly connected first battery The sheet 2 or the second battery sheet 3 is charged, thereby eliminating the hot spot effect and energy waste, thereby achieving the purpose of protecting the first battery piece 2 and the second battery piece 3.
  • the branch of the first anti-reverse charging module S1 is defined as the first anti-reverse charging branch
  • the branch of the second anti-recharging module S2 is the second anti-reverse charging branch
  • the first anti-reverse branch is to be
  • the circuit formed by the parallel connection of the charging branch, the second anti-reverse charging branch and the bypass module S3 is defined as an anti-reduction charging path.
  • the photovoltaic power generation tile provided by the embodiment of the present disclosure further includes a junction box 102, and the junction box 102 is disposed on the flat portion.
  • the inner surface of the first anti-reverse charging module S1, the second anti-reverse charging module S2 and the bypass module S3 are all disposed in the junction box 102, so that the first anti-reverse charging module S1 can be protected not only by the junction box 102.
  • the second anti-reverse charging module S2 and the bypass module S3, and the flat portion 10 can also be used as a protection umbrella of the junction box 102 to protect the junction box 102 from damage caused by direct sunlight, thereby realizing the first anti-reverse charging module.
  • the maintenance of the first anti-reverse charging module S1, the second anti-reverse charging module S2 and the bypass module S3 is convenient.
  • the first anti-reverse charging module S1, the second anti-reverse charging module S2, and the bypass module S3 are anti-reverse charging devices having a single-conduction function, such as a diode or a diode.
  • the negative electrode is connected to the positive electrode terminal U+, and the positive electrode of the diode is connected to the positive electrode of the second battery piece 3 or the first battery piece 2.
  • the position of the junction box 102 should be disposed away from the mounting block 101 , and the general mounting block 101 is provided.
  • the distance between the junction box 102 and the junction box 102 must not be less than 40 mm. Of course, the distance between the two can also be set according to the actual situation.
  • the bus bar 103 for the photovoltaic power generation tile can be correspondingly disposed on the inner surface of the ridge portion to prevent the bus bar 103 from being worn due to long-term open-air installation, and also convenient for lead wire access at the wiring.
  • the photovoltaic power generation tile provided by the embodiment of the present disclosure further includes a package for packaging the first battery sheet 2 and the second battery sheet 3.
  • the battery encapsulation layer 4 includes a first encapsulation layer 41 between the battery layer 40 formed by the first battery sheet 2 and the second battery sheet 3 and the outer surface of the tile substrate 1, formed in the battery layer
  • the first encapsulation layer 41 includes a first adhesive film
  • the second encapsulation layer includes a second adhesive film 42 sequentially laminated on the light receiving surface of the battery layer 40, a sealing layer 43, and a transparent encapsulation plate 44.
  • the sealing layer 43 functions as an insulation and waterproofing, and butyl rubber or the like can be used.
  • the first adhesive film and the second adhesive film 42 can be made of a highly water-resistant polyolefin adhesive film, such as POE (Polyolefin elastomer, polyolefin elastomer).
  • the film, the transparent package board 44 can adopt a flexible front plate or a glass front plate, etc., and has the characteristics of high water blocking rate, so as to ensure the battery layer 40 has a long service life.
  • the tile base 1 When the tile base 1 is a light transmissive material, it can be used as a photovoltaic power tile transparent encapsulation plate 44. Thus, the tile base body 1 provides both the overall shape of the photovoltaic power generation tile and the transparent package plate 44.
  • the tile base 1 can be replaced by a waterproof backing material.
  • the backing material is an aluminum backing plate, a TPT (Tedlar PET Tedlar), a back sheet of a polyvinyl chloride composite film, etc.
  • the ridge portion is an arc-shaped structure, and the cross section of the ridge portion (along the width direction of the tile base body 1) is semicircular, in a ridge.
  • the outer surface of the portion forms the second battery sheet 3, and the first battery sheet 2 is formed on the outer surface of the flat portion 10.
  • the ridge portion is a lap joint of the tile base 1
  • the number of the ridge portions is two, and the two ridge portions are the first ridge portion 11 and the second ridge portion 12, respectively;
  • the flat plate portion 10 is provided at the first ridge portion 11 Between the second raised portion 12 and the flat portion of the first raised portion 11 on the first raised portion 11 and the first raised portion 11 and the flat plate as shown in FIGS.
  • the ridge height of one end of the second end b of the portion 10 is equal; the ridge outer diameter of the second ridge portion 12 at the end flush with the first end a of the flat plate portion 10 and the second ridge portion 12 and the flat plate portion 10
  • the inner ends of the flush ends of the second ends b are equal, and the inner surface ridge radius of the first ridges 11 is equal to the outer surface ridge radius of the second ridges 12, such that the first ridges 11 and the second ridges 12 are present.
  • a speaker-like structure having a smaller end and a larger end allows the two photovoltaic tiles to overlap along the length of the tile base 1.
  • adjacent two photovoltaic power generation tiles are lapped together by left lap or right lap along the width direction of the tile base body 1.
  • the inner surface of the first ridge 11 of one photovoltaic tile is in contact with the outer surface of the second ridge 12 of another photovoltaic tile.
  • the outer surface of the first ridge 11 of one of the photovoltaic tiles is in contact with the inner surface of the second ridge 12 of the other photovoltaic tile.
  • FIG. 9 further embodiments of the present disclosure further provide a photovoltaic power generation tile 200 that is different from the photovoltaic power generation tile 100 provided by any of the above embodiments in that:
  • the first cell 2 in the photovoltaic tile 200 includes a plurality of sub-first cells 20 connected in series.
  • the first battery piece 2 is provided on the flat plate portion 10, and the light receiving area and the light intensity of each portion are the same. Therefore, the arrangement of the plurality of sub-first battery sheets 20 is relatively free.
  • the specific structure of the first battery piece 2 included in the photovoltaic power generation tile 100 can also be set as shown in FIG. 8 and FIG.
  • the second battery piece 3 in the photovoltaic power generation tile 200 includes a plurality of sets of sub-second battery cells 30 in parallel, and the second anti-reverse charging branch includes parallel connection between the positive electrode terminal U+ and the negative terminal terminal U.
  • the second anti-reverse charging branch includes parallel connection between the positive electrode terminal U+ and the negative terminal terminal U.
  • each anti-reverse full road includes a sub-anti-reverse charging module, and the sub-anti-reverse charging modules included in the plurality of anti-reverse full roads constitute the anti-reverse charging module.
  • the second anti-reverse charging module includes a plurality of sub-second anti-reverse charging modules.
  • each set of second cell sheets includes at least two sub-second cell sheets 30 connected in series or in parallel.
  • each of the anti-reverse charging branches includes a sub-anti-reverse charging module as a diode, so that the negative electrode of the diode It is connected to the positive terminal U+, and the positive electrode of the diode is connected to the positive electrode of each group of the second battery.
  • adjacent two sub-first cells 20 are independent of each other in the embodiment of the present disclosure to ensure independence and insulation between adjacent two sub-first cells 20 . . Similarly, the adjacent two sub-second cells 30 should also remain independent of each other.
  • the second battery sheet 3 is disposed at a position where the ridge height of the ridge portion is similar.
  • the second battery sheet 3 includes a plurality of groups, the second unit In the case of a battery sheet, a plurality of sets of second battery sheets are disposed at positions where the height of the ridges is similar.
  • the ridge heights of the ridges are similar, and therefore, a plurality of sets of sub-second cells in the embodiment of the present disclosure are along the The length direction of the tile base 1 (that is, the direction X in FIG. 7) is provided on the outer surface of the ridge; the length of each sub-second cell 30 in each set of the second cell along the length of the tile base 1
  • the direction is set at the ridge so that the light-receiving area and the illumination intensity of each of the sub-second cells 30 are close to each other, and the current loss when each of the sub-cells 30 in each of the second cells is connected in series is less.
  • the first requirement is that the difference between the length of the second battery piece 3 along the length direction of the tile base 1 and the length of the first battery piece 2 along the length direction of the tile base 1 is 50 mm or less to ensure efficient use of the tile.
  • the second requirement considering that the second battery piece 3 is disposed on the outer surface of the ridge portion, the light receiving area and the light intensity of the ridge portion per unit area are different from the outer surface of the flat plate portion 10, resulting in the second battery
  • the voltage of the chip 3 is 90% to 99% of the voltage of the first cell 2. Therefore, in the embodiment of the present disclosure, the pair of second battery sheets 30 and the first first battery sheets 20 are selected in series and parallel, and it should be ensured that the second battery sheet 3 and the first battery sheet 2 are simultaneously disposed on the flat portion 10, and the second battery sheet is provided.
  • the voltage of 3 is higher than 1%-10% of the voltage of the first cell 2.
  • the form increases the terminal voltage of the second cell of each group such that the terminal voltage of each of the second cells is equal to the terminal voltage of the sub-first cell 20 in series.
  • each sub-first cell sheet 20 in the embodiment of the present disclosure is a monocrystalline silicon cell sheet (HIT for short), and the monocrystalline silicon cell sheet is a square structure having a chamfered edge.
  • the single crystal silicon cell is regarded as a square monocrystalline silicon cell for serial-parallel design calculation, and the square single crystal silicon cell has a side length of 156 mm, and each sub-second cell 30 is a CIGS thin film solar cell. (referred to as CM), CIGS thin film solar cells have two specifications, the first specification CM: length 312mm, width 43.75mm; second specification CM: length 211mm, width 58mm.
  • the number of HIT columns refers to the number of rows in which the HIT is arranged along the width direction of the tile substrate 1 (that is, the direction Y), and the number of HIT rows refers to the length of the HIT along the tile substrate 1.
  • the number of rows arranged in the direction (ie, direction X), the number of CM series refers to the number of sub-second cells 30 included in each group of second cells, and the number of CMs in parallel refers to the group of second cells 30
  • the HIT string voltage refers to the terminal voltage of the plurality of sub-first cells 20 in series, and the CM string voltage refers to the terminal voltage of the second cell 30 of each group; the difference in length refers to the length along the tile substrate 1.
  • the voltage difference is the percentage between the voltage difference and the terminal voltage of the plurality of sub-first cells 20 connected in series, wherein the voltage The difference is the difference between the terminal voltage of the second battery chip 30 of each group and the terminal voltage of the plurality of sub-first battery sheets 20 connected in series.
  • the first series-parallel design of the neutron first cell sheet 20 and the sub-second cell sheet 30 in the embodiment of the present disclosure has an optional result as shown in FIG. 9, and the number of the first first cell sheets 20 is shown in FIG. There are four, each piece does not need to be cut, and the number of sub-second cells 30 is three, and each group of second cells includes five sub-second cells 30 in series, and four sub-cells 20 along the
  • the length direction of the tile base 1 is arranged in a row, and the three sets of the second battery pieces are arranged in a row along the length direction of the tile base 1, and each set of the second battery pieces is arranged in a row along the length direction of the tile base 1. See Figure 9 for the specific circuit diagram.
  • the second series-parallel design analysis of the sub-first cell sheet 20 and the sub-second cell sheet 30 has more optional results, one of which is described as an embodiment, specifically As shown in FIG. 8, along the length direction of the tile base 1, 12 sub-first cells 20 are connected in series, and 15 sub-cells 30 are connected in series. In this embodiment, the neutron first cell is used.
  • 12 sub-first cell sheets 20 are cut from four complete single crystal silicon cells.
  • the optional result of the first series-parallel design analysis result does not need to cut the single crystal silicon cell, and the optional result of the second series-parallel design analysis result needs to cut the monocrystalline silicon cell, but due to the parallel structure therein Less, therefore, anti-backup devices and bus bars 103 can be saved (see Figure 4).
  • the optional result of the first series-parallel design analysis result and the optional result of the second series-parallel design analysis result the voltages of the first cell 2 and the second cell 3 in parallel can be matched as much as possible (ie, Try to be equal) to avoid voltage loss while avoiding current losses.
  • some embodiments of the present disclosure also provide a photovoltaic power generation system 300 that includes a plurality of photovoltaic power generation tiles 100 or photovoltaic power generation tiles 200 as described in the above embodiments.
  • the beneficial effects of the photovoltaic power generation system provided by the embodiments of the present disclosure are the same as those of the photovoltaic power generation tile provided by the above technical solution, and are not described herein.
  • the first battery piece 2 and the second battery piece 3 included in each photovoltaic power generation tile are connected in parallel, and each photovoltaic power generation tile is connected in series to ensure maximum current output.
  • each photovoltaic power generation tile includes at least two ridges, and at least two ridges include a first ridge 11 and a The second ridge 12, the first ridge 11 and the second ridge 12 are respectively connected to the two ends of the tile base 1 included in the photovoltaic power generation tile along the width direction thereof (that is, the direction Y); and along the tile substrate In the width direction of 1 (ie, direction Y), among the two adjacent photovoltaic power generation tiles (the first photovoltaic power generation tile 51 and the second photovoltaic power generation tile 52), one of the photovoltaic power generation tiles includes the second raised portion 12
  • the outer surface is in contact with the inner surface of the first ridge 11 included in the adjacent photovoltaic power generation tile; along the length direction of the tile base 1 (ie, the direction X), two adjacent photovoltaic power tiles are lapped together.
  • two adjacent photovoltaic power generation tiles are lapped together, specifically; along the length direction of the tile base body 1 included in each photovoltaic power generation tile, two adjacent In the photovoltaic power generation tile, the outer surface of the first ridge 11 included in one of the photovoltaic power generation tiles is in contact with the inner surface of the first ridge portion 11 included in the adjacent photovoltaic power generation tile, and the second ridge included in one photovoltaic power generation tile The outer surface of the portion 12 is in contact with the inner surface of the second ridge 12 included in the adjacent photovoltaic power generation tile.
  • the number of the ridges included in the photovoltaic power generation tile may also be three, four or more, which is not specifically limited herein.

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Abstract

一种光伏发电瓦，包括瓦片基体（1），所述瓦片基体（1）包括平板部（10）以及与所述平板部（10）连接的至少一个隆起部；所述平板部（10）的外表面形成有第一电池片（2），至少一个所述隆起部的外表面形成有与所述隆起部的外表面相匹配的第二电池片（3）。

Description

光伏发电瓦及光伏发电系统
本申请要求于2018年04月14日提交中国专利局、申请号为201810334434.3、发明名称为“一种光伏发电瓦及光伏发电系统”，以及于2018年06月11日提交中国专利局、申请号为201810596495.7、发明名称为“一种光伏发电瓦及光伏发电系统”的两件中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本公开涉及光伏发电技术领域，尤其涉及一种光伏发电瓦及光伏发电系统。
背景技术
随着光伏发电技术的日益成熟，人们逐渐将光伏发电技术应用到建筑领域，形成了集光伏发电和建筑技术于一体的光伏建筑一体化技术(Building Integrated Photovoltaic，BIPV)，使得传统的建筑具有光伏发电功能。比如，将光伏发电技术应用到瓦片上，形成了具有光伏发电功能的太阳能发电瓦。
发明内容
本公开一方面提供了一种光伏发电瓦，所述光伏发电瓦包括瓦片基体、第一电池片以及第二电池片，所述瓦片基体包括平板部以及与所述平板部连接的至少一个隆起部，所述第一电池片设置于所述平板部的外表面，所述第二电池片设置于至少一个所述隆起部的外表面且与至少一个所述隆起部的外表面相匹配。
在一些实施例中，所述第一电池片为平板电池片，所述第二电池片为柔性电池片。
在一些实施例中，所述第一电池片和所述第二电池片并联。
在一些实施例中，所述第一电池片的端电压和所述第二电池片的端电压相等。
在一些实施例中，还包括旁路模块，所述旁路模块与所述第一电池 片和所述第二电池片并联。
在一些实施例中，还包括第一防反充模块和第二防反充模块；所述第一电池片与所述第一防反充模块串联在一起，所述第一电池片的正极与所述第一防反充模块连接；所述第二电池片与所述第二防反充模块串联在一起，所述第二电池片的正极与所述第二防反充模块连接。
在一些实施例中，还包括接线盒，所述接线盒设在所述平板部的内表面，所述第一防反充模块、第二防反充模块和旁路模块均设在所述接线盒内。
在一些实施例中，所述第一电池片包括串联在一起的多个子第一电池片。
在一些实施例中，所述第二电池片包括并联在一起的多组子第二电池片，所述第二防反充模块包括多个子第二防反充模块，所述多个子第二防反充模块与所述多组子第二电池片一一对应串联，所述多组子第二电池片的正极一一对应与所述多个子第二防反充模块连接。
在一些实施例中，多组所述子第二电池片沿着所述瓦片基体的长度方向设在所述隆起部的外表面。
在一些实施例中，所述第一电池片沿着所述瓦片基体的长度方向的长度与所述第二电池片沿着所述瓦片基体的长度方向的长度差小于等于50mm。
在一些实施例中，所述光伏发电瓦还包括用于封装第一电池片和第二电池片的电池封装层。
本公开又一方面提供了一种光伏发电系统，该光伏发电系统包括上述任一实施例所述光伏发电瓦。
在一些实施例中，各个所述光伏发电瓦串联连接。
在一些实施例中，每个所述光伏发电瓦包括的隆起部的数量至少为两个，至少两个所述隆起部包括第一隆起部和第二隆起部，所述第一隆起部和所述第二隆起部分别连接于所述光伏发电瓦包括的瓦片基体沿其宽度方向上的两端；沿着所述瓦片基体的宽度方向，相邻两 个所述光伏发电瓦中，其中一个所述光伏发电瓦所包括的第二隆起部的外表面与另一个所述光伏发电瓦所包括的第一隆起部的内表面接触；沿着所述瓦片基体的长度方向，相邻两个所述光伏发电瓦搭接在一起。
附图说明
此处所说明的附图是示例性地，仅用于解释本公开，而不能理解为对本公开的限制。在附图中：
图1为本公开一些实施例提供的光伏发电瓦的俯视图；
图2为图1所示光伏发电瓦的立体图；
图3为图1所示光伏发电瓦中接线盒在瓦片基体的位置示意图；
图4为图1所示光伏发电瓦中汇流条在瓦片基体的位置示意图；
图5为图1所示光伏发电瓦中电池封装层封装第一电池片和第二电池片的示意图；
图6本图1所示光伏发电瓦中防反充电路的电路图；
图7为本公开另一些实施例提供的光伏发电瓦的立体图；
图8为图7所示光伏发电瓦中防反充电路的第一种电路图；
图9为图7所示光伏发电瓦中防反充电路的第二种电路图；
图10为本公开一些实施例提供的光伏发电系统的结构示意图。
具体实施方式
下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本公开保护的范围。
相关技术中，太阳能发电瓦包括瓦片基体和设置于瓦片基体的受光面上的晶硅电池片，利用晶硅电池片吸收太阳能，并将其转化成电能，以供用户使用。然而，在太阳能发电瓦作为建材使用时，每个太阳能发电瓦的瓦片基体的边缘部分一般为曲面或异形结构，以实现两 个太阳能发电瓦之间的搭接或五金连接，而晶硅电池片通常为平板状且不可弯曲，使得晶硅电池片只能形成在瓦片基体的平面区域，导致晶硅电池片在瓦片基体的实际占有面积较少，无法充分利用瓦片基体的表面，使得光伏发电瓦的瓦片基体的利用率较低。
为了解决上述问题，如图1～图3所示，本公开一些实施例提供了一种光伏发电瓦，该光伏发电瓦包括瓦片基体1，第一电池片2以及第二电池片3；瓦片基体1可以为金属瓦片、陶土瓦片、水泥瓦片、陶瓷瓦片或玻璃瓦片等，在此不再一一列举。
瓦片基体1包括平板部10以及与平板部10连接的至少一个隆起部；平板部10和至少一个隆起部可以为一体结构，也可以为分体式结构，但考虑到制作便利性，平板部10和至少一个隆起部为一体式结构。隆起部的数量可以为一个、两个、三个，在此不做具体限定。在一些实施例中，如图1～图3所示，隆起部的数量为两个，两个隆起部分别为第一隆起部11和第二隆起部12。
平板部10的外表面形成有第一电池片2，至少一个隆起部的外表面形成有与隆起部的外表面相匹配的第二电池片3；该隆起部可以为设置于瓦片基体1边沿的隆起状搭接件，也可以为设置于瓦片基体1的中部且沿该瓦片基体1的长度方向延伸(也即是图1或图2所示的方向X)的某个条形凸起部位，该隆起部的外表面处在凸起状态，该隆起部的内表面处在内凹状态。
下面结合附图对本公开实施例提供的光伏发电瓦的具体制作过程进行详细说明；其中，瓦片基体1以浮法平板玻璃制作为例说明。
步骤S100：提供一浮法平板玻璃；对浮法平板玻璃进行钢化处理，并按照预设瓦片结构热弯成瓦片基体1，使得瓦片基体1包括平板部10以及与平板部10连接的至少一个隆起部；
步骤S200：在平板部10的外表面形成第一电池片2，在至少一个隆起部的外表面形成第二电池片3，使得光伏发电时，第一电池片2和第二电池片3同时将太阳能转化为电能。
本公开实施例提供的光伏发电瓦安装时，将光伏发电瓦所包括的 瓦片基体1中平板部10和至少一个隆起部的内表面与檩条、椽条相对，以保证形成于平板部10外表面的第一电池片2和形成于至少一个隆起部外表面的第二电池片3向光设置。
由本公开实施例提供的光伏发电瓦的结构及其具体制作过程可知，瓦片基体1包括平板部10以及与平板部10连接的至少一个隆起部，而由于在至少一个隆起部的外表面形成有与隆起部的外表面相匹配的第二电池片3，因此，在一些实施例中，第二电池片3为柔性电池片，这样，可以利用第二电池片3的柔性特质使得第二电池片3与隆起部的外表面匹配，从而使得原来无法利用的隆起部的外表面形成了可用于发电的第二电池片3，从而增加了光伏发电瓦中瓦片基体1的利用面积，使得光伏发电瓦的发电量提高。
可以理解的是，如图1和图3所示，本公开实施例中平板部10的内表面以粘结或其他方式设有安装块101，以利用安装块101搭接在屋顶的挂瓦条上。在一些实施例中，安装块101设置在平板部10沿瓦片基体1的宽度方向(也即是图1或图2所示的方向Y)上的中部，以防止因为平板部10受力不均所产生的瓦片基体1倾斜以及应力分布不均的问题，从而保证瓦片基体1的使用寿命。在一些实施例中，如图1所示，安装块101的宽度W 1为平板部10的宽度W 2的1/3～1/2。其中，需要说明的是，安装块101的宽度W 1是指安装块101在瓦片基体1的宽度方向上的尺寸，平板部10的宽度W 2是指平板部10在瓦片基体1的宽度方向上的尺寸。
而从安装块101的设置强度考虑，在一些实施例中，如图1所示，安装块101的高度(图中未示出)应当小于安装块101的长度L 1，以使得安装块101具有较大的结构强度。其中，需要说明的是，安装块101的高度是指安装块101在垂直于平板部10所在平面的方向上的尺寸，安装块101的长度L 1是指安装块101在瓦片基体1的长度方向上的尺寸。
此外，考虑到安装块101需要搭接在挂瓦条上，因此，安装块101在平板部10上的位置受到挂瓦条的影响。在一些实施例中，如图1 所示，平板部10包括沿着瓦片基体1的长度方向相对设置的第一端a和第二端b，安装块101靠近该第一端a的一端端面与该平板部10的第一端a的端面之间的距离L 2不小于30mm，安装块101的高度不小于20mm，即可与挂瓦条相匹配搭接。
安装块101可以为一个，也可以为多个，在此不做具体限定。当安装块101为多个时，多个安装块101沿瓦片基体1的宽度方向依次间隔设置，且多个安装块101中位于两端的两个安装块101之间的连线的中点位于平板部10沿瓦片基体1的宽度方向上的中部。多个安装块101可以等间距排列，也可以非等间距排列，在此不做具体限定。在一些实施例中，多个安装块101等间距排列。
需要说明的是，如图1～图5所示，上述第一电池片2为平板电池片，以使得第一电池片2与瓦片基体1所包括的平板部10相匹配，平板电池片可以为柔性电池片或刚性电池片。上述第二电池片3是与瓦片基体1所包括的隆起部相匹配的隆起式电池片。隆起式电池片可以为弯曲性能较好的柔性电池片，也可以是预制成与隆起部形状匹配的刚性电池片。其中，刚性电池片可以为晶硅电池片，柔性电池片可以为CIGS薄膜太阳能电池片等容易弯曲的电池片。
考虑到图1～图5所示的太阳能电池芯片中隆起部与平板部之间的结构不同，导致第一电池片2和第二电池片3的受光照射角度不一致，致使隆起部外表面的第二电池片3单位面积光照强度低于平板部10外表面的第一电池片2单位面积光照强度，从而导致隆起部外表面的第二电池片3所产生的电流小于平板部10外表面的第一电池片2所产生的电流。如果将第一电池片2和第二电池片3置于串联回路中，则第二电池片3产生的较小电流对第一电池片2产生的较大电流具有限流作用，使得串联回路的总电流等于第二电池片3产生的较小电流，进而使得第二电池片3产生的较小电流以发热的形式消耗第一电池片2产生的较大电流，造成能源浪费，而且太阳能电池输出电压的变化受光照影响较大。基于此，如图6所示，本公开实施例中第一电池片2和第二电池片3并联在正极接线端子U+和负极接线端子U-之间， 这样，该并联电路输出的总电流值等于第一电池片2输出的电流值与第二电池片3所输出的电流值之和，从而避免不必要的能源浪费，同时也能够减少电池片发热的问题，提高第二电池片3和第一电池片2的使用寿命。同时，为了避免第一电池片2所在支路与第二电池片3所在支路之间产生相互影响，第一电池片2的端电压和第二电池片3的端电压相等，这样，并联后的电路端电压与第一电池片2的端电压和第二电池片3的端电压接近，减少了第一电池片2和第二电池片3因为并联造成电池输出功率的损耗。
如果没有光线照射到第一电池片2和第二电极片3的表面，或第一电池片2和第二电极片3的表面受到遮挡，使得第一电池片2和第二电池片3都不工作或输出相比于回路中其它光伏发电瓦较小，那么电路中存在电流时，这些电流会继续流向第一电池片2和第二电池片3，导致第一电池片2和第二电池片3发热。为此，如图6、图8和图9所示，本公开实施例提供的光伏发电瓦还包括旁路模块S3，旁路模块S3与第一电池片2和第二电池片3并联在一起，在第一电池片2和第二电池片3都不能正常工作时，电路中所存在的电流直接通过旁路模块S3流出，这样，在电路中存在电流的情况下，避免电流流入第一电池片2和第二电池片3导致第一电池片2和第二电池片3发热问题，以从根本上解决第一电池片2和第二电池片3发热所产生的电能消耗。
在一些实施例中，如图6所示，本公开实施例提供的光伏发电瓦还包括第一防反充模块S1和第二防反充模块S2。第一电池片2与第一防反充模块S1串联在一起，且第一电池片2的正极与第一防反充模块S1连接，这样，正极接线端子U+通过第一防反充模块S1与第一电池片2电连接，使得在第一电池片2因为损坏或者被遮挡而无法使用时，利用第一防反充模块S1避免防反充电路中有电流存在时向第一电池片2充电。同理的，第二电池片3与第二防反充模块S2串联在一起，且第二电池片3的正极与第二防反充模块S2连接，这样，正极接线端子U+通过第二防反充模块S2与第二电池片3电连接，使 得在第二电池片3因为损坏或者被遮挡而无法使用时，利用第二防反充模块S2避免防反充电路中有电流存在时向第二电池片3充电。由此可知，本公开实施例通过将第二电池片3和第一电池片2并联，并增设第一防反充模块S1，以对第一电池片2进行保护，增设第二防反充模块S2，以对第二电池片3进行保护，使得其中一个电池片无法使用时，第一防反充模块S1或第二防反充模块S2能够避免电路所存在的电流向对应连接的第一电池片2或第二电池片3充电，从而杜绝热斑效应和能源浪费，进而达到保护第一电池片2和第二电池片3的目的。
为了方便后文描述，定义第一防反充模块S1所在支路为第一防反充支路，第二防反充模块S2所在支路为第二防反充支路，将第一防反充支路、第二防反充支路和旁路模块S3所在支路并联形成的电路定义为防反充电路。
如图6所示，如果防反充电路中存在电流，在第一电池片2和第二电池片3被遮挡或损坏时，电流可直接通过旁路模块S3流出第一电池片2和第二电池片3所在光伏发电瓦的防反充电路，以避免上述第一防反充模块S1和第二防反充模块S2消耗该电流。
在一些实施例中，如图1和图3所示，为了避免露天环境对电子器件所造成的损害，本公开实施例提供的光伏发电瓦还包括接线盒102，该接线盒102设在平板部10的内表面，第一防反充模块S1、第二防反充模块S2和旁路模块S3均设在接线盒102内，这样，不仅能够利用接线盒102保护第一防反充模块S1、第二防反充模块S2和旁路模块S3，而且还可以将平板部10作为接线盒102的保护伞，保护接线盒102免于露天太阳光直射的损害，由此实现了第一防反充模块S1、第二防反充模块S2和旁路模块S3的二次保护。而如果第一防反充模块S1、第二防反充模块S2、旁路模块S3中的一个或多个损坏，也可以直接从接线盒102中移除损坏的模块，更换新的模块，从而使得第一防反充模块S1、第二防反充模块S2和旁路模块S3的维护比较方便。
需要说明的是，如图6所示，上述第一防反充模块S1、第二防反充模块S2和旁路模块S3均为具有单向导通功能的防反充器件，如二极管，二极管的负极与正极接线端子U+连接，二极管的正极与第二电池片3或第一电池片2的正极连接。
需要说明的是，如图1、图3和图4所示，如果平板部10的内表面还设有安装块101，则上述接线盒102的位置应当避开安装块101设置，一般安装块101与接线盒102之间的间距不得低于40mm，当然也可以根据实际情况设定二者之间的距离。同时，如图4所示，对于光伏发电瓦的汇流条103，可相应的设在隆起部的内表面，以防止汇流条103因为长期露天设置所造成的耗损，同时也方便引线接入位于接线盒102内的第一防反充模块S1、第二防反充模块S2和旁路模块S3。
为了保证第二电池片3和第一电池片2具有良好的封装效果，如图5所示，本公开实施例提供的光伏发电瓦还包括用于封装第一电池片2和第二电池片3的电池封装层4，电池封装层4包括位于第一电池片2和第二电池片3所形成的电池层40与瓦片基体1的外表面之间的第一封装层41，形成在电池层40受光面的第二封装层，第一封装层41包括第一胶膜，第二封装层包括依次层叠在电池层40的受光面的第二胶膜42、密封层43和透明封装板44。其中，密封层43起到绝缘防水的作用，可采用丁基胶等；第一胶膜和第二胶膜42可采用高阻水的聚烯烃胶膜，如POE(Polyolefin elastomer，聚烯烃弹性体)胶膜，透明封装板44可采用柔性前板或者玻璃前板等，具有阻水率高等特点，以保证电池层40具有较长的使用寿命。
当瓦片基体1为透光材料时，可作为光伏发电瓦透明封装板44，这样，瓦片基体1既提供光伏发电瓦的整体形状，又可实现透明封装板44的作用。瓦片基体1可被防水的背板材料替代。背板材料为含铝背板、TPT(Tedlar PET Tedlar，聚氟乙烯复合膜)背板等
在一些实施例中，如图1～图5所示，本公开实施例中隆起部为弧状结构，隆起部的横断面(沿着瓦片基体1的宽度方向)为半圆形， 在一个隆起部的外表面形成第二电池片3，在平板部10的外表面形成第一电池片2。当隆起部作为瓦片基体1的搭接件，上述隆起部的数量为两个，两个隆起部分别为第一隆起部11和第二隆起部12；平板部10设在第一隆起部11和第二隆起部12之间；如图1和图2所示，第一隆起部11上与平板部10的第一端a平齐的一端的隆起外径与第一隆起部11上与平板部10的第二端b平齐的一端的隆起内径相等；第二隆起部12上与平板部10的第一端a平齐的一端的隆起外径与第二隆起部12上与平板部10的第二端b平齐的一端的隆起内径相等，第一隆起部11的内表面隆起半径与第二隆起部12的外表面隆起半径相等，这样第一隆起部11和第二隆起部12呈现一端较小，一端较大的类似喇叭状结构，使得两个光伏发电瓦能够沿瓦片基体1的长度方向进行搭接。
为了防止雨水倒灌，可以根据光伏发电瓦所在环境的常年风向，沿着瓦片基体1的宽度方向，相邻两个光伏发电瓦采用左搭接或右搭接的方式搭接在一起。示例的，一个光伏发电瓦的第一隆起部11的内表面与另一个光伏发电瓦的第二隆起部12的外表面接触。又示例的，其中一个光伏发电瓦的第一隆起部11的外表面与另一个光伏发电瓦的第二隆起部12的内表面接触。
如图9所示，本公开另一些实施例还提供了一种光伏发电瓦200，该光伏发电瓦200与上述任一实施例所提供的光伏发电瓦100的不同之处在于：
如图7～图9所示，光伏发电瓦200中第一电池片2包括串联在一起的多个子第一电池片20。其中，第一电池片2设在平板部10，其各个部分的受光面积和光照强度相同，因此，多个子第一电池片20的排列方式比较自由。
当然，光伏发电瓦100所包括的第一电池片2的具体结构也可以参见图8和图9的方式设置。
如图8～图9所示，光伏发电瓦200中第二电池片3包括并联的多 组子第二电池片30，第二防反充支路包括并联在正极接线端子U+和负极接线端子U﹣之间的多个个防反充分路，每个防反充分路包括一个子防反充模块，多个防反充分路所包括的子防反充模块组成上述防反充模块。换句话说，第二防反充模块包括多个子第二防反充模块。
上述多个子第二防反充模块与多组子第二电池片一一对应串联，多组子第二电池片的正极一一对应与多个子第二防反充模块连接，以利用子第二防反充模块防止电路存在电流时，电流流入被遮挡或损坏的一组子第二电池片中。其中，每组子第二电池片包括至少两个串联或并联在一起的子第二电池片30。
如图8和图9所示，当上述第二电池片2包括并联在一起的多组子第二电池片，每个防反充支路包括的子防反充模块为二极管，使得二极管的负极与正极接线端子U+连接，二极管的正极与每组子第二电池片的正极连接。
可以理解的是，如图7～图9所示，本公开实施例中相邻两个子第一电池片20之间相互独立，以保证相邻两个子第一电池片20之间的独立和绝缘。同理相邻两个子第二电池片30也应当保持相互独立。
考虑到第二电池片3所设置的位置在隆起部的外表面，隆起部的隆起高度随着位置的不同有所差异，导致第二电池片3不同部位的受光面积和光照强度不同，而平板部10所形成的第一电池片2则不存在这种问题，因此，选择隆起部的隆起高度相近的地方设置第二电池片3，具体的，当第二电池片3包括多组子第二电池片时，则多组子第二电池片设在隆起高度相近的部位。
示例性的，如图7所示，本公开实施例中沿着瓦片基体1的长度方向，隆起部的隆起高度相近，因此，本公开实施例中多组子第二电池片沿着所述瓦片基体1的长度方向(也即是图7中的方向X)设在隆起部的外表面；每组子第二电池片内的各个子第二电池片30沿着瓦片基体1的长度方向设在隆起部，以使得每个子第二电池片30的受光面积和光照强度接近，每组子第二电池片内各个子第二电池片30串联时的电流损失较少。
至于上述子第一电池片20和上述子第二电池片30的数量，则需要考虑其串并联后，所有子第二电池片30上的端电压与所有子第一电池片20上的端电压相等这一约束条件，同时兼具子第二电池片30在瓦片基体1的长度方向上的长度相等这一约束条件，以最大化的利用隆起部的面积。
更进一步，本公开实施例对子第二电池片30和子第一电池片20进行串并联时，应当从以下两个要求考虑：
第一个要求：第二电池片3沿着瓦片基体1的长度方向上的长度与第一电池片2沿着瓦片基体1的长度方向的长度之差小于等于50mm，以保证有效利用瓦片基体1的面积，并保证一定的建筑美观性。
第二个要求：考虑到第二电池片3设在隆起部的外表面时，其单位面积的隆起部的受光面积和光照强度与设在平板部10的外表面有所差距，导致第二电池片3的电压是第一电池片2电压的90％-99％。因此，本公开实施例在选择对子第二电池片30和子第一电池片20进行串并联，应当保证第二电池片3和第一电池片2同时设在平板部10时，第二电池片3的电压高于第一电池片2的电压的1％-10％。这样，当第二电池片3设在隆起部时，就能够利用原来高出的电压抵消因为设在隆起部的第二电池片3受光不均所产生的发电损耗；同时，还能够利用串联的形式提高每组子第二电池片的端电压，以使得每组子第二电池片的端电压与串联的子第一电池片20的端电压相等。
基于上述两个要求的考虑，本公开实施例中每个子第一电池片20为单晶硅电池片(简称HIT)，单晶硅电池片为边缘具有倒角的正方形的结构，将该结构的单晶硅电池片视为正方形的单晶硅电池片进行串并联设计计算，并设定该正方形的单晶硅电池片的边长为156mm，每个子第二电池片30为CIGS薄膜太阳能电池片(简称CM)，CIGS薄膜太阳能电池片有两种规格，第一种规格CM：长度为312mm，宽度为43.75mm；第二种规格CM：长度为211mm，宽度为58mm。
表1子第一电池片和子第二电池片的第一种串并联设计基础参数
Figure PCTCN2018107658-appb-000001
表2子第一电池片和子第二电池片第一种串并联设计分析结果
Figure PCTCN2018107658-appb-000002
表3子第一电池片和子第二电池片的第二种串并联设计基础参数
Figure PCTCN2018107658-appb-000003
表4子第一电池片和子第二电池片第二种串并联设计分析结果
Figure PCTCN2018107658-appb-000004
其中，表2和表4中，HIT列数是指HIT沿着瓦片基体1的宽度方向(也即是方向Y)排列的排数，HIT行数是指HIT沿着瓦片基体1的长度方向(也即是方向X)排列的排数，CM串联数量是指每组子第二电池片所包括的子第二电池片30的数量，CM并联数量是指子第二电池片30的组数，HIT串电压是指串联的多个子第一电池片20的端电压，CM串电压是指每组子第二电池片30的端电压；长度差值是指沿着瓦片基体1的长度方向，所有子第二电池片30和所有子第一电池片20的长度之差，电压差值是指电压差与串联的多个子第一电池片20的端电压之间的百分比，其中，电压差是指每组子第二电池片30的端电压与串联的多个子第一电池片20的端电压之差。
由表1和表2可以发现，本公开实施例中子第一电池片20和子第二电池片30的第一种串并联设计可选结果如图9所示，子第一电池片20的数量为4个，每片无需切割，子第二电池片30的组数为3个，每组子第二电池片包括5个串联的子第二电池片30，4个子第一电池片20沿着瓦片基体1的长度方向设置成一列，3组子第二电池片沿着瓦片基体1的长度方向设置成一列，每组子第二电池片沿着瓦片基体1的长度方向设置成一列，具体电路图参见图9。
由表3和表4可以发现，本公开实施例中子第一电池片20和子第二电池片30的第二种串并联设计分析可选结果比较多，以其中一种作为实施例说明，具体如图8所示，沿着瓦片基体1的长度方向，其采用12个子第一电池片20串联成一列，15个子第二电池片30串联成一列，本公开实施例中子第一电池片20和子第二电池片30的第二种串并联设计分析结果中，在该实施例中12个子第一电池片20是由4块完整的单晶硅电池片切割而成。
通过对比可以发现，第一种串并联设计分析结果的可选结果无需切割单晶硅电池片，第二种串并联设计分析结果的可选结果需要切割单晶硅电池片，但由于其中并联结构较少，因此，可节省防反充器件和汇流条103(见图4)。同时，采用第一种串并联设计分析结果的可选结果和第二种串并联设计分析结果的可选结果，可以使得并联的第一电池片2和第二电池片3的电压尽量匹配(即尽量相等)，以在避免电流损失的同时避免电压损失。
如图10所示，本公开一些实施例还提供了一种光伏发电系统300，该光伏发电系统300包括多个上述实施例所述的光伏发电瓦100或光伏发电瓦200。
与现有技术相比，本公开实施例提供的光伏发电系统的有益效果与上述技术方案提供的光伏发电瓦的有益效果相同，在此不做赘述。
具体的，本公开实施例中每个光伏发电瓦所包括的第一电池片2与第二电池片3并联在一起，各个光伏发电瓦串联，以保证电流最大输出。
在一些实施例中，如图1～图5、图7和图10所示，每个光伏发电瓦包括的隆起部的数量至少为两个，至少两个隆起部包括第一隆起部11和第二隆起部12，第一隆起部11和第二隆起部12分别连接于光伏发电瓦包括的瓦片基体1沿其宽度方向(也即是方向Y)上的两端；且沿着瓦片基体1的宽度方向(也即是方向Y)，相邻两个光伏发电瓦(第一光伏发电瓦51和第二光伏发电瓦52)中，其中一个光伏发电瓦所包括的第二隆起部12的外表面与相邻光伏发电瓦所包括的第一隆起部11的内表面接触；沿着瓦片基体1的长度方向(也即是方向X)，相邻两个光伏发电瓦搭接在一起。
其中，沿着瓦片基体1的长度方向，相邻两个光伏发电瓦搭接在一起，具体而言；沿着每个光伏发电瓦所包括的瓦片基体1的长度方向，相邻两个光伏发电瓦中，其中一个光伏发电瓦所包括的第一隆起部11的外表面与相邻光伏发电瓦包括的第一隆起部11的内表面接触，其中一个光伏发电瓦所包括的第二隆起部12的外表面与相邻光伏发电瓦所包括的第二隆起部12的内表面接触。
光伏发电瓦包括的隆起部的数量也可以为3、4或4个以上，在此不做具体限定。
在上述实施方式的描述中，具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (15)

  1. 一种光伏发电瓦，包括瓦片基体、第一电池片以及第二电池片，所述瓦片基体包括平板部以及与所述平板部连接的至少一个隆起部，所述第一电池片设置于所述平板部的外表面，所述第二电池片设置于至少一个所述隆起部的外表面且与至少一个所述隆起部的外表面相匹配。
  2. 根据权利要求1所述的光伏发电瓦，其中，所述第一电池片为平板电池片，所述第二电池片为柔性电池片。
  3. 根据权利要求2所述的光伏发电瓦，其中，所述第一电池片和所述第二电池片并联。
  4. 根据权利要求3所述的光伏发电瓦，其中，所述第一电池片的端电压和所述第二电池片的端电压相等。
  5. 根据权利要求3所述的光伏发电瓦，其中，还包括旁路模块，所述旁路模块与所述第一电池片和所述第二电池片并联。
  6. 根据权利要求5所述的光伏发电瓦，其中，还包括第一防反充模块和第二防反充模块；
    所述第一电池片与所述第一防反充模块串联在一起，所述第一电池片的正极与所述第一防反充模块连接；
    所述第二电池片与所述第二防反充模块串联在一起，所述第二电池片的正极与所述第二防反充模块连接。
  7. 根据权利要求6所述的光伏发电瓦，其中，还包括接线盒，所述接线盒设在所述平板部的内表面，所述第一防反充模块、第二防反充模块和旁路模块均设在所述接线盒内。
  8. 根据权利要求2～6任一项所述的光伏发电瓦，其中，所述第一电池片包括串联在一起的多个子第一电池片。
  9. 根据权利要求6所述的光伏发电瓦，其中，所述第二电池片包括并联在一起的多组子第二电池片，所述第二防反充模块包括多个子第二防反充模块，所述多个子第二防反充模块与所述多组子第二电池片一一对应串联，所述多组子第二电池片的正极一一对应与所述多个 子第二防反充模块连接。
  10. 根据权利要求9所述的光伏发电瓦，其中，所述多组子第二电池片沿着所述瓦片基体的长度方向设在所述隆起部的外表面。
  11. 根据权利要求1～10任一项所述的光伏发电瓦，其中，所述第一电池片沿着所述瓦片基体的长度方向的长度与所述第二电池片沿着所述瓦片基体的长度方向的长度差小于等于50mm。
  12. 根据权利要求1～10任一项所述的光伏发电瓦，其中，所述光伏发电瓦还包括用于封装所述第一电池片和所述第二电池片的电池封装层。
  13. 一种光伏发电系统，包括权利要求1～12任一项所述光伏发电瓦。
  14. 根据权利要求13所述的光伏发电系统，其中，各个所述光伏发电瓦串联连接。
  15. 根据权利要求13所述的光伏发电系统，其中，每个所述光伏发电瓦包括的隆起部的数量至少为两个，至少两个所述隆起部包括第一隆起部和第二隆起部，所述第一隆起部和所述第二隆起部分别连接于所述光伏发电瓦包括的瓦片基体沿其宽度方向上的两端；
    沿着所述瓦片基体的宽度方向，相邻两个所述光伏发电瓦中，其中一个所述光伏发电瓦所包括的第二隆起部的外表面与另一个所述光伏发电瓦所包括的第一隆起部的内表面接触；
    沿着所述瓦片基体的长度方向，相邻两个所述光伏发电瓦搭接在一起。
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