WO2019095826A1 - 自加热卷材 - Google Patents

自加热卷材 Download PDF

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Publication number
WO2019095826A1
WO2019095826A1 PCT/CN2018/105719 CN2018105719W WO2019095826A1 WO 2019095826 A1 WO2019095826 A1 WO 2019095826A1 CN 2018105719 W CN2018105719 W CN 2018105719W WO 2019095826 A1 WO2019095826 A1 WO 2019095826A1
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WIPO (PCT)
Prior art keywords
layer
self
heating
heating coil
flexible
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PCT/CN2018/105719
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English (en)
French (fr)
Inventor
霍艳寅
王运方
代凤玉
曹志峰
Original Assignee
北京铂阳顶荣光伏科技有限公司
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Publication of WO2019095826A1 publication Critical patent/WO2019095826A1/zh

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/40Heating elements having the shape of rods or tubes
    • H05B3/54Heating elements having the shape of rods or tubes flexible
    • EFIXED CONSTRUCTIONS
    • E04BUILDING
    • E04DROOF COVERINGS; SKY-LIGHTS; GUTTERS; ROOF-WORKING TOOLS
    • E04D5/00Roof covering by making use of flexible material, e.g. supplied in roll form
    • E04D5/10Roof covering by making use of flexible material, e.g. supplied in roll form by making use of compounded or laminated materials, e.g. metal foils or plastic films coated with bitumen
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • H01L31/032Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • H01L31/032Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02SGENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S20/00Supporting structures for PV modules
    • H02S20/20Supporting structures directly fixed to an immovable object
    • H02S20/22Supporting structures directly fixed to an immovable object specially adapted for buildings
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02SGENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S20/00Supporting structures for PV modules
    • H02S20/20Supporting structures directly fixed to an immovable object
    • H02S20/22Supporting structures directly fixed to an immovable object specially adapted for buildings
    • H02S20/23Supporting structures directly fixed to an immovable object specially adapted for buildings specially adapted for roof structures
    • H02S20/25Roof tile elements
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02SGENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S20/00Supporting structures for PV modules
    • H02S20/20Supporting structures directly fixed to an immovable object
    • H02S20/22Supporting structures directly fixed to an immovable object specially adapted for buildings
    • H02S20/26Building materials integrated with PV modules, e.g. façade elements
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02SGENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H02S40/10Cleaning arrangements
    • H02S40/12Means for removing snow
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02SGENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H02S40/40Thermal components
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/02Details
    • H05B3/04Waterproof or air-tight seals for heaters
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/013Heaters using resistive films or coatings
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/016Heaters using particular connecting means
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00Integration of renewable energy sources in buildings
    • Y02B10/10Photovoltaic [PV]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/541CuInSe2 material PV cells

Definitions

  • the present disclosure relates to the field of solar power generation technology, and more particularly to a self-heating coil.
  • the present disclosure provides a self-heating coil comprising: a layer of a flexible power generating material and a heating layer disposed in series; the layer of flexible power generating material comprises a flexible battery chip and a power output terminal connected to the flexible battery chip The heating layer is located below the layer of power generating material, and the power input end of the heating layer is connected to the power output end of the layer of flexible power generating material.
  • the flexible battery chip is a flexible solar cell chip.
  • the self-heating web further includes an adhesive layer for fixing the self-heating web to a building or other object.
  • the layer of the flexible power-generating material further includes an encapsulation film that coats the battery chip.
  • the upper and side sides of the layer of the flexible power generating material are coated with a water blocking film layer.
  • the water blocking film layer is an organic-inorganic hybrid transparent high barrier film.
  • the organic-inorganic hybrid transparent high barrier film is configured to be composed of a plurality of assembleable units.
  • an anti-aging layer is attached to the outer side of the water blocking film layer.
  • the ageing resistant layer is an ethylene-tetrafluoroethylene copolymer film layer.
  • the heating layer is formed by fixing a metal oxide on an insulating layer by a process of physical vapor deposition or laser pulse deposition.
  • an insulating skeleton layer is disposed between the layer of the flexible power generating material and the heating layer.
  • a water blocking heat transfer layer is disposed between the heating layer and the bonding layer.
  • the water blocking heat transfer layer is an aluminum-containing PET (polyethylene terephthalate) film including a PET film and an aluminum film.
  • a corrosion resistant layer is disposed between the water blocking heat transfer layer and the bonding layer.
  • the flexible battery chip is a copper indium gallium selenide battery chip.
  • the self-heating coil provided by the present disclosure converts solar energy into electric energy by using a flexible battery chip, thereby heating the heating layer, thereby achieving the purpose of heating and melting the snow covered on the self-heating coil, and the self-provided by the embodiment of the present invention
  • the heating coil is flexible and easy to install.
  • FIG. 1 is a schematic cross-sectional view of a self-heating web according to one embodiment of the present disclosure
  • FIG. 2 is a schematic cross-sectional view of a self-heating web according to another embodiment of the present disclosure.
  • FIG. 1 is a schematic cross-sectional view of a self-heating coil according to an embodiment of the present disclosure. As shown in FIG. 1, an embodiment of the present disclosure provides a self-heating coil comprising a layer of flexible power generation material. 1 and heating layer 2.
  • the flexible power-generating material layer 1 includes a flexible battery chip 11 and an electrical energy output terminal that connects the flexible battery chip 11.
  • the flexible power generating material layer 1 may be a flexible solar cell module including the above flexible battery chip and a film layer covering the battery chip, and the power output end is disposed on the flexible solar cell module.
  • the heating layer 2 is located below the flexible power generating material layer 1, and the power input end of the heating layer 2 is connected to the power output end of the flexible power generating material layer 1 to convert electrical energy into heat, and the snow covered on the self-heating coil is performed. Heat and melt.
  • the self-heating web further includes an adhesive layer 8 which is located below the heating layer 2.
  • the heating layer 2 and the layer of flexible power-generating material 1 are fixed to other objects such as buildings by an adhesive layer 8 below the heating layer 2.
  • the flexible battery chip 11 is a flexible solar cell chip, and the flexible solar cell chip may be a copper indium gallium selenide (CIGS) battery chip, which has high conversion rate and good flexibility, and can adapt to various buildings. The installation is more convenient.
  • the flexible battery chip is not limited thereto, and may be an amorphous silicon battery chip, an organic thin film battery chip or a cadmium telluride (CdTe) battery chip.
  • the heating layer 2 and the layer of flexible power-generating material 1 can also be fixed to the top layer of a building or other object by means of other brackets or keels.
  • the layer 1 of the self-heating coil of the power-generating material is flexible so that the entire self-heating web can be rolled up for easy handling and storage when not in use, and it can be adapted to the building during use (eg The complex shape of the roof) is easy to install.
  • the crimpable self-heating laminate can also be well fitted to the mounting surface.
  • the crimpable self-heating laminate does not have to be rolled up, but can also be laid flat on a flat surface.
  • the heating layer 2 described above is a metal oxide of an element such as aluminum, zinc, indium or the like fixed on the insulating layer by a PLD/PVD (laser pulse deposition/physical vapor deposition) process, and the insulating layer may be The floor is chosen for glass.
  • the transmittance of the layer is changed by changing the thickness of the metal oxide film layer.
  • Metal oxides have electrical resistance characteristics (each block is equivalent to one resistance), which generates heat after energization, and changes the overall shape by changing the area of the metal oxide film layer and changing the series-parallel relationship between adjacent film blocks. The resistance value is changed after the power is turned on. Typical operating voltages are 36 to 600 V and typical heating power is 50 W/m 2 .
  • the bonding layer 8 may be a butyl adhesive, having a thickness of 500-1000 ⁇ m, and the surface is covered with a release paper, and the self-heating coil can be effectively adhered to cement, asphalt, and aluminum-plated zinc. Board and other roofing materials.
  • the heating layer 2 and the layer of flexible power generating material 1 may also be secured to the top layer of a building or other object by means of other brackets or keels.
  • the self-heating coil provided by the embodiment of the present disclosure converts solar energy into electric energy by using the flexible battery chip 11, and further heats the heating layer 2, thereby achieving the purpose of heating and melting the snow covered on the self-heating coil, and self-heating.
  • the coil is flexible and easy to install.
  • the self-heating coil provided by the embodiments of the present disclosure is based on a flexible solar power generation material and a conductive film heating technology, and proposes a waterproofing membrane for self-generating and heat-melting snow for building roofing.
  • a waterproofing membrane for self-generating and heat-melting snow for building roofing.
  • it has the function of generating electricity and melting snow.
  • the traditional solar power system it has more convenient application for roof installation.
  • the traditional snow melting system it can generate electricity by itself and solve the problem of heating electricity. .
  • the self-heating web may be rectangular having a length dimension of 20-50 meters and a width dimension of 1-3 meters, for example, a length of 50 meters and a width of 1.5 meters.
  • the shape of the crimpable self-heating laminate is not limited to a rectangle, but may be other geometric shapes (e.g., triangular or square).
  • the self-heating web is set to each unit having a corresponding predetermined size, and the splicing mounting is performed at the time of use, which further improves the convenience of installation.
  • the flexible power-generating material layer 1 further includes an encapsulation film 12 that encapsulates the flexible battery chip 11.
  • the encapsulating film 12 may have a thickness of 200 to 500 ⁇ m and is made of POE (polyolefin elastomer) or EVA (ethylene-vinyl acetate copolymer).
  • POE polyolefin elastomer
  • EVA ethylene-vinyl acetate copolymer
  • the upper and side sides of the flexible power-generating material layer 1 are coated with a water-repellent film layer 3.
  • the water-repellent film layer 3 may have a thickness of 50-150 ⁇ m, and an organic-inorganic hybrid transparent high-barrier film is prepared on the flexible power-generating material layer 1 to have a water vapor transmission rate of ⁇ 1 ⁇ 10 -3 g/m 2 /d, The water vapor can be effectively prevented from entering the layer 1 of the flexible power generation material, prolonging the life of the solar cell chip 11.
  • an ethylene-tetrafluoroethylene copolymer film layer 4 is further attached on the outer side of the water blocking film layer 3 (ie, the other side opposite to the flexible power generating material layer 1) ( ETFE), the ETFE film layer may have a thickness of 30-100 ⁇ m, and is resistant to ultraviolet aging and insulation.
  • the ethylene-tetrafluoroethylene copolymer film layer 4 is an anti-aging layer, and may be made of other anti-aging materials, and is not limited to the ethylene-tetrafluoroethylene copolymer film layer.
  • an insulating skeleton layer 5 is disposed between the flexible power generating material layer 1 and the heating layer 2.
  • the insulating skeleton layer 5 may be a PET (polyethylene terephthalate) film and may have a thickness of 50-100 ⁇ m as a skeleton layer to serve as a support, insulation protection and water blocking.
  • a water blocking heat transfer layer 6 is disposed under the heating layer 2.
  • the water-blocking heat transfer layer 6 may be an aluminum-containing PET film, and a PET film and an aluminum film from top to bottom.
  • the thickness of the PET film is 150-200 ⁇ m
  • the thickness of the aluminum film is 5-15 ⁇ m, which acts to block water vapor, and at the same time effectively reflects the heat transferred from the heating layer 2 back to the upper layer of the self-heating coil.
  • the water-blocking heat transfer layer 6 involved in the embodiment of the present invention is a water-blocking heat transfer layer, and can be replaced by other materials having a water-blocking heat transfer effect, and is not limited to the water-blocking heat transfer layer.
  • a corrosion-resistant layer 7 is disposed under the water-blocking heat transfer layer 6, and the corrosion-resistant layer 7 may be a fluorine-containing film having a thickness of 25-40 ⁇ m, which may be PVF.
  • Materials such as (polyvinyl formal), PVDF (polyvinylidene fluoride) or ECTFE (ene chlorotrifluoroethylene copolymer) provide chemical and insulating protection.

Abstract

一种自加热卷材,包括:依次层叠设置的柔性发电材料层(1)和加热层(2);柔性发电材料层(1)包括柔性电池芯片(11),以及连接所述电池芯片(11)的电能输出端;加热层(2)具有电能输入端,所述加热层(2)的电能输入端与所述柔性发电材料层(1)的电能输出端相连。该自加热卷材可以固定在建筑物或其它物体上。

Description

自加热卷材
相关申请的交叉引用:
本国际申请要求于2017年11月17日在中国国家知识产权局提交的实用新型专利申请No.201721541552.9的优先权,该实用新型专利申请的全部内容以引用方式并入本文。
技术领域
本公开涉及太阳能发电技术领域,尤其涉及一种自加热卷材。
背景技术
随着人们环保意识的增强和对绿色低碳替代能源的日益重视,太阳能的开发和利用也将成为未来的主要清洁能源之一,太阳能发电技术是通过太阳能电池板将太阳辐射能通过光电效应或者光化学效应直接或间接转换成电能,相对于普通电池和可循环充电电池来说,太阳能电池属于更节能环保的绿色产品。
现代城市以多层和高层住宅为主,并且高层建筑越来越多,目前全国总能耗中有30%以上是建筑能耗,显然太阳能的利用是实现建筑节能减排目标的有效手段。但目前高层建筑利用太阳能电池板建造的太阳能屋顶的总体利用率不高,普遍存在受雨雪覆盖后发电效率低下的问题,并且存在太阳能屋顶重量大、安装不便的问题。
公开内容
本公开的目的是提供一种自加热卷材以解决现有技术中的问题,一方面提高了太阳能屋顶的安装便利性,另一方面提高了太阳能电池板的发电效率。本公开提供了一种自加热卷材,所述自加热卷材包括:依次层叠设置的柔性发电材料层和加热层;柔性发电材料层包括柔性电池芯片以及连接所述柔性电池芯片的电能输出端;加热层位于所述发电材料层的下方,所述加热层的电能输入端与所述柔性发电材料层的电能输出端相连。
根据本公开的一方面,所述柔性电池芯片为柔性太阳能电池芯片。
根据本公开的一方面,所述自加热卷材还包括粘接层,所述粘接层用于将所述自加热卷材固定在建筑物或其他物体上。
根据本公开的一方面,所述柔性发电材料层还包括封装胶膜,所述封装胶膜将所述电池芯片包覆。
根据本公开的一方面,所述柔性发电材料层的上方和边侧包覆有阻水膜层。
根据本公开的一方面,所述阻水膜层为有机无机杂化透明高阻隔薄膜。
根据本公开的一方面,所述有机无机杂化透明高阻隔薄膜设置为由多个可拼装单元组成。
根据本公开的一方面,在所述阻水膜层的外侧贴覆有耐老化层。
根据本公开的一方面,所述耐老化层为乙烯-四氟乙烯共聚物膜层。
根据本公开的一方面,所述加热层是通过物理气相沉积或激光脉冲沉积的工艺将金属氧化物固定在绝缘层上而形成的。
根据本公开的一方面,在所述柔性发电材料层与所述加热层之间设 置有绝缘骨架层。
根据本公开的一方面,在所述加热层与粘结层之间设置有阻水传热层。
根据本公开的一方面,所述阻水传热层为含铝PET(聚对苯二甲酸乙二醇酯)膜,所述含铝PET膜包括PET膜和铝膜。
根据本公开的一方面,在所述阻水传热层与粘结层之间设置有耐腐蚀层。
根据本公开的一方面,所述柔性电池芯片为铜铟镓硒电池芯片。
本公开提供的自加热卷材利用柔性电池芯片将太阳能转化为电能,进而为加热层加热,从而实现对覆盖在自加热卷材上的积雪加热融化的目的,同时本发明实施例提供的自加热卷材柔性好,安装便利。
附图说明
图1为本公开提供的根据一个实施例的自加热卷材的断面示意图;以及
图2为本公开提供的根据另一个实施例的自加热卷材的断面示意图。
图中:1-柔性发电材料层;2-加热层;3-阻水膜层;4-乙烯-四氟乙烯共聚物膜层;5-绝缘骨架层;6-阻水传热层;7-耐腐蚀层;8-粘接层;11-柔性电池芯片;12-封装胶膜。
具体实施方式
下面详细描述本公开的实施例,所述实施例的示例在附图中示出,其中自始至终以相同或类似的标号表示相同或类似的元件或具有相同或 类似功能的元件。下面通过参考附图描述的实施例是示例性的,仅用于解释本公开,而不能被解释为对本公开的限制。
图1为本公开提供的根据一个实施例的自加热卷材的断面示意图,如图1所示,本公开的实施例提供了一种自加热卷材,该自加热卷材包括柔性发电材料层1和加热层2。
在本实施例中,柔性发电材料层1包括柔性电池芯片11以及连接柔性电池芯片11的电能输出端。在本实施例中,柔性发电材料层1可以是柔性太阳能电池组件,该柔性太阳能电池组件包括上述柔性电池芯片和包覆该电池芯片的膜层,上述电能输出端设置在该柔性太阳能电池组件上。加热层2位于柔性发电材料层1的下方,加热层2的电能输入端与柔性发电材料层1的电能输出端相连,以将电能转化为热量,对覆盖在自加热卷材上的积雪进行加热融化。
在本实施例中,所述自加热卷材还包括粘接层8,粘接层8位于加热层2下方。加热层2和柔性发电材料层1通过加热层2下方的粘接层8固定在例如建筑物的其它物体上。在一个实施例中,上述的柔性电池芯片11为柔性太阳能电池芯片,该柔性太阳能电池芯片可以是铜铟镓硒(CIGS)电池芯片,其转化率高,且柔性好,能够适应多种建筑物,安装更加便利。需要指出的是,柔性电池芯片不限于此,还可以是非晶硅电池芯片、有机薄膜电池芯片或碲化镉(CdTe)电池芯片。
加热层2和柔性发电材料层1还可以通过其他支架或龙骨的方式固定在建筑物或其他物体的顶层。
在本实施例中,所述自加热卷材的发电材料层1是柔性的,因而整个自加热卷材能够在不使用时卷起来便于搬运和存放,并且其能够在使用时适应建筑物(例如屋顶)的复杂外形方便安装。例如,在建筑物的安装表面存在凹凸不平的情况下,可卷曲自加热层合制品也能够与该安 装表面很好地贴合。当然,可卷曲自加热层合制品并非必须卷起来,也可以展开平放于平整的表面上。
在一个实施例中,上述的加热层2是通过PLD/PVD(激光脉冲沉积/物理气相沉积)的工艺将铝、锌、铟等元素的金属氧化物固定在绝缘层上,所述绝缘层可选地为玻璃。通过改变金属氧化物膜层的厚度改变本层的透光度。金属氧化物具有电阻特性(每一个区块等效为一个电阻),通电后会产生热量,通过改变金属氧化物膜层的面积以及改变相邻膜层区块之间的串并联关系来改变整体的电阻值,最终通电后改变发热值。典型的工作电压为36~600V,典型的加热功率是50W/m 2
在一个实施例中,上述的粘接层8可采用丁基胶粘接剂,厚度为500-1000μm,表面覆有离型纸,可把自加热卷材有效粘贴在水泥、沥青、镀铝锌板等屋面材料上。
在其他实施例中,加热层2和柔性发电材料层1还可以通过其他支架或龙骨的方式固定在建筑物或其他物体的顶层。
本公开的实施例提供的自加热卷材利用柔性电池芯片11将太阳能转化为电能,进而为加热层2加热,从而实现对覆盖在自加热卷材上的积雪加热融化的目的,同时自加热卷材柔性好,安装便利。
本公开的实施例提供的自加热卷材基于柔性太阳能发电材料与导电膜加热技术,提出了用于建筑屋顶铺设的、可自行发电和发热融雪的防水卷材。与传统防水卷材相比具备了发电和发热融雪的功能;与传统太阳能发电系统相比具有更适应屋面安装的应用便捷性;与传统融雪系统相比可以自行发电从而解决了加热用电的问题。
在一个实施例中,该自加热卷材可以是长方形,其长度尺寸为20-50米且其宽度尺寸为1-3米,例如,长度为50米且宽度为1.5米。当然, 可卷曲自加热层合制品的形状不限于长方形,也可以是其他几何形状(例如三角形或正方形)。此外,在一个实施例中,将自加热卷材设置为具有相应预定尺寸的各个单元,在使用时进行拼接安装,能进一步提高其安装的便利性。
如图2所示,在本公开的另一个实施例中,柔性发电材料层1还包括封装胶膜12,该封装胶膜12将柔性电池芯片11包覆。该封装胶膜12的厚度可以是200-500μm,材质为POE(聚烯烃弹性体)或EVA(乙烯-醋酸乙烯共聚物)等。把前部封装胶膜、柔性电池芯片11和后部封装胶膜粘连成一体,有效缓冲了外力可能对电池芯片带来的损坏。
如图2所示,在一个实施例中,柔性发电材料层1的上方和边侧包覆有阻水膜层3。该阻水膜层3的厚度可以是50-150μm,在柔性发电材料层1上制备有机无机杂化透明高阻隔薄膜,使其水汽透过率<1×10 -3g/m 2/d,可有效地阻止水汽进入柔性发电材料层1,延长了太阳能电池芯片11的寿命。
如图2所示,在一个实施例中,在上述阻水膜层3的外侧(即与柔性发电材料层1相对的另一侧)还贴覆有乙烯-四氟乙烯共聚物膜层4(ETFE),该ETFE膜层的厚度可以是30-100μm,起到耐紫外老化、绝缘保护作用。在本发明的其他实施例中,该乙烯-四氟乙烯共聚物膜层4为耐老化层,还可以采用其他耐老化材料制成,不限于乙烯-四氟乙烯共聚物膜层。
如图2所示,在一个实施例中,在柔性发电材料层1与加热层2之间设置有绝缘骨架层5。该绝缘骨架层5可采用PET(聚对苯二甲酸乙二醇酯)膜,厚度可以是50-100μm,作为骨架层,起到支撑、绝缘保护和阻水的作用。
如图2所示,在一个实施例中,在加热层2的下方设置有阻水传热 层6。该阻水传热层6可采用含铝PET膜,自上而下为PET膜材和铝膜。PET膜材的厚度为150-200μm,铝膜的厚度为5-15μm,起到阻隔水汽的作用,同时可有效把加热层2传递的热量反射回自加热卷材的上层。本发明实施例中涉及的阻水传热层6为阻水传热层,可以由其他具有阻水传热效果的材料替代,不限定于阻水传热层。
如图2所示,在一个实施例中,在阻水传热层6的下方还设置有耐腐蚀层7,该耐腐蚀层7可以是含氟膜材,厚度为25-40μm,可以是PVF(聚乙烯醇缩甲醛)、PVDF(聚偏氟乙烯)或ECTFE(烯三氟氯乙烯共聚物)等材料,起到耐化学腐蚀、绝缘保护作用。
以上依据附图所示的实施例详细说明了本公开的构造、特征及作用效果,以上所述仅为本公开的较佳实施例,但本公开不以附图所示限定实施范围,凡是依照本公开的构想所作的改变或修改为等同变化的等效实施例,仍未超出说明书与图示所涵盖的精神时,均应在本公开的保护范围内。

Claims (15)

  1. 一种自加热卷材,包括:
    依次层叠设置的柔性发电材料层和加热层;
    柔性发电材料层包括柔性电池芯片以及连接所述柔性电池芯片的电能输出端;
    加热层位于所述发电材料层的下方,所述加热层的电能输入端与所述柔性发电材料层的电能输出端相连。
  2. 根据权利要求1所述的自加热卷材,其中,所述柔性电池芯片为柔性太阳能电池芯片。
  3. 根据权利要求1所述的自加热卷材,所述自加热卷材还包括粘接层,所述粘接层用于将所述自加热卷材固定在建筑物或其他物体上。
  4. 根据权利要求1所述的自加热卷材,其中,所述柔性发电材料层还包括封装胶膜,所述封装胶膜将所述柔性电池芯片包覆。
  5. 根据权利要求1所述的自加热卷材,其中,所述柔性发电材料层的上方和边侧包覆有阻水膜层。
  6. 根据权利要求5所述的自加热卷材,其中,所述阻水膜层为有机无机杂化透明高阻隔薄膜。
  7. 根据权利要求6所述的自加热卷材,其中,所述有机无机杂化透明高阻隔薄膜设置为由多个可拼装单元组成。
  8. 根据权利要求5所述的自加热卷材,其中,在所述阻水膜层的外侧贴覆有耐老化层。
  9. 根据权利要求8所述的自加热卷材,其中,所述耐老化层为乙烯-四氟乙烯共聚物膜层。
  10. 根据权利要求1所述的自加热卷材,其中,所述加热层是通过物理气相沉积或激光脉冲沉积的工艺将金属氧化物固定在绝缘层上而形成的。
  11. 根据权利要求1所述的自加热卷材,其中,在所述柔性发电材料层与所述加热层之间设置有绝缘骨架层。
  12. 根据权利要求3所述的自加热卷材,其中,在所述加热层与粘结层之间设置有阻水传热层。
  13. 根据权利要求12所述的自加热卷材,其中,所述阻水传热层为含铝聚对苯二甲酸乙二醇酯膜,所述含铝聚对苯二甲酸乙二醇酯膜包括聚对苯二甲酸乙二醇酯膜和铝膜。
  14. 根据权利要求12所述的自加热卷材,其中,在所述阻水传热层与粘结层之间设置有耐腐蚀层。
  15. 根据权利要求1所述的自加热卷材,其中,所述柔性电池芯片为铜铟镓硒电池芯片。
PCT/CN2018/105719 2017-11-17 2018-09-14 自加热卷材 WO2019095826A1 (zh)

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