WO2019183766A1 - 碳纳米管制备系统 - Google Patents

碳纳米管制备系统 Download PDF

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Publication number
WO2019183766A1
WO2019183766A1 PCT/CN2018/080531 CN2018080531W WO2019183766A1 WO 2019183766 A1 WO2019183766 A1 WO 2019183766A1 CN 2018080531 W CN2018080531 W CN 2018080531W WO 2019183766 A1 WO2019183766 A1 WO 2019183766A1
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Prior art keywords
growth
tube
carbon nanotube
growth tube
air curtain
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PCT/CN2018/080531
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English (en)
French (fr)
Inventor
勇振中
李清文
金赫华
李达
李志�
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苏州捷迪纳米科技有限公司
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Priority to EP18913162.6A priority Critical patent/EP3778475A4/en
Priority to RU2020134901A priority patent/RU2760734C1/ru
Priority to JP2021501062A priority patent/JP7090789B2/ja
Priority to US17/042,001 priority patent/US20210025055A1/en
Priority to KR1020207030794A priority patent/KR102492666B1/ko
Priority to PCT/CN2018/080531 priority patent/WO2019183766A1/zh
Publication of WO2019183766A1 publication Critical patent/WO2019183766A1/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/10—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing sonic or ultrasonic vibrations

Definitions

  • the present invention relates to a carbon nanotube preparation apparatus, and more particularly to a carbon nanotube preparation system.
  • carbon nanotube materials As a typical one-dimensional nanomaterial, carbon nanotube materials have excellent mechanical, thermal and electrical properties, and their applications are extensive. Many universities, research institutes and companies at home and abroad are studying how to synthesize carbon nanotube materials with superior macroscopic properties.
  • the common method for synthesizing carbon nanotubes is to prepare macroscopic carbon nanotube materials, such as carbon nanotube films and carbon nanotube fibers, based on chemical vapor deposition (CVD).
  • CVD chemical vapor deposition
  • the present invention provides a carbon nanotube preparation system, comprising:
  • Pre-growth tube for pre-preparation of raw materials before carbon nanotube formation
  • An atomizer for atomizing the carbon nanotube material into the pre-growth tube is disposed at a front end of the pre-growth tube, and the atomizer has a spray output tube, the spray An output tube extends into the pre-growth tube;
  • a growth tube for generating carbon nanotubes, and continually growing the generated carbon nanotubes; a front end of the growth tube is sealingly connected to a rear end of the pre-growth tube;
  • a gas curtain generator for forming an air curtain surrounding the outlet of the spray output tube, the air curtain extending in a direction parallel to the extension of the pre-growth tube; the air curtain generator is disposed at the Said in the pre-growth tube.
  • the carbon nanotube preparation system described above forms an air curtain around the spray output tube of the atomizer. On the one hand, a laminar flow is formed in the pre-growth tube through the air curtain to stabilize the air flow, and on the other hand, the adhesion of the impurities or the carbon nanotubes is avoided, and the continuous growth of the carbon nanotubes is ensured.
  • the air curtain generator includes at least one air curtain forming plate, and the air curtain forming plate is provided with a plurality of air holes.
  • the air curtain forming plate is annular, and the spray output tube is located at a center hollow of the air curtain forming plate; the air holes are radially distributed on the air curtain forming plate.
  • the edge contour of the air curtain forming plate matches the inner wall of the pre-growth tube, and at least a portion of the air holes are located in an edge region of the air curtain forming plate to form a snug fit The air curtain flow on the inner wall of the growth tube.
  • the air curtain generator further includes at least one air inlet for introducing a carrier gas into the pre-growth tube, the air inlet being located at a front end of the pre-growth tube.
  • the pre-growth tube and the growth tube are connected by a tubular first insulating member.
  • the temperature in the pre-growth tube is 200-950 degrees Celsius
  • the temperature inside the growth tube is 1100-1600 degrees Celsius.
  • the pre-growth tube comprises a first pre-growth section and a second pre-growth section
  • the first pre-growth segment is adjacent to a front end of the pre-growth tube, and the second pre-growth segment is adjacent to a rear end of the pre-growth tube;
  • the temperature within the first pre-growth section is different from the temperature within the second pre-growth section.
  • a first temperature controller is disposed outside the first pre-growth segment, and a second temperature controller is disposed outside the second pre-growth segment;
  • the first pre-growth section and the second pre-growth section are connected by a second heat insulator.
  • the first temperature controller includes a first heating device and a first cooling device
  • the second temperature controller includes a second heating device and a second cooling device.
  • the temperature in the first pre-growth section is 200-300 degrees Celsius
  • the temperature in the second pre-growth section is 700-950 degrees Celsius.
  • the inner wall of the growth tube is provided with an anti-stick coating for preventing the nanomaterial from adhering to the inner wall of the growth tube.
  • the release coating is zirconia or zinc oxide.
  • the growth tube is provided with a vent hole for introducing a carrier gas to form a gas protective layer on the inner wall surface of the growth tube, and the vent hole penetrates the wall of the growth tube. And evenly distributed.
  • an angle between an axial direction of the vent hole and an extending direction of the growth tube is less than 5 degrees.
  • the atomizer includes an ultrasonic atomizing nozzle for uniformly atomizing the raw material and ejected, and an ultrasonic controller for adjusting the ultrasonic value.
  • the nanomaterial synthesis system is upright or horizontal.
  • the pre-growth tube and the growth tube are vertically disposed, and the atomizer is vertically disposed along the pre-growth tube and the growth tube extending direction.
  • the air curtains are distributed in parallel along the direction of gravity.
  • FIG. 1 is a schematic structural view of an embodiment of an industrialized continuous production carbon nanotube material production system
  • FIG. 2 is a schematic structural view of a carbon nanotube synthesis system according to an embodiment of the present invention.
  • FIG. 3 is a schematic structural view of a gas curtain forming plate of one embodiment of FIG. 2; wherein FIG. 3a is a front view of the air curtain forming plate, FIG. 3b is a cross-sectional view of the air curtain forming plate along BB, and FIG. 3c is a cross-sectional view of FIG. a partial enlarged view at the dotted portion D;
  • FIG. 4 is a schematic structural view of a gas curtain forming plate of another embodiment of FIG. 2; wherein FIG. 4a is a front view of the air curtain forming plate, FIG. 4b is a cross-sectional view of the air curtain forming plate along CC, and FIG. 4c is a view of FIG. 4b.
  • FIG. 4a is a front view of the air curtain forming plate
  • FIG. 4b is a cross-sectional view of the air curtain forming plate along CC
  • FIG. 4c is a view of FIG. 4b.
  • the preparation method of carbon nanotubes basically utilizes various applied energy to decompose the carbon source into atomic or ionic forms, and then aggregates to form macroscopic materials of carbon nanotubes.
  • there are three main preparation methods for carbon nanotubes namely, arc discharge method, laser ablation method, and chemical vapor deposition method.
  • carbon nanotubes are often prepared by chemical vapor deposition (CVD).
  • CVD preparation of carbon nanotubes is mainly based on gaseous or liquid hydrocarbons as a carbon source. After atomization of the carbon source, the carbon source is cleaved on the surface of the catalyst particles into carbon clusters at a suitable temperature by adding a catalyst, and then carbon atoms. The carbon nanotubes are recombined, and the carbon nanotube materials of different morphology are obtained through a specially designed collecting device. Among them, the catalyst is carried together with the carbon source and carried into the furnace body by the carrier gas.
  • the preparation method is called floating catalytic carbon nanotube preparation technology. In the present invention, a floating catalytic carbon nanotube process is mainly used to prepare carbon nanotubes.
  • the carbon nanotube production system 100 includes a carbon nanotube preparation system 200, a carbon nanotube collection system 300, and an exhaust system 400.
  • the carbon nanotube preparation system 200 is used to synthesize raw materials into continuous carbon nanotubes.
  • the carbon nanotube collection system 300 is used to densify the prepared carbon nanotubes, process them into desired materials, and collect them.
  • the carbon nanotube collection system 300 can process carbon nanotubes into wires or film sheets and collect them into rolls.
  • the exhaust system 400 is used to collect and treat the reacted gases to avoid the release of harmful gases within the production system 100 to the atmosphere and to avoid residual gas within the production system 100 from interfering with the stability of the internal gas flow.
  • the carbon nanotube preparation system 200 includes a pre-growth tube 210, an atomizer 220, a growth tube 230, and a gas curtain generator 240.
  • the pre-growth tube 210 is used for the preliminary preparation of the raw material before the formation of the carbon nanotubes.
  • the atomizer 220 is used to atomize the carbon nanotube raw material and spray it into the pre-growth tube 210.
  • the atomizer 220 is disposed at a front end of the pre-growth tube 210.
  • the atomizer 220 has a spray output tube 221 that extends into the pre-growth tube 210.
  • the growth tube 230 is used for the formation of carbon nanotubes and for the continued growth of the produced carbon nanotubes.
  • the front end of the growth tube 230 is sealingly connected to the rear end of the pre-growth tube.
  • the nebulizer 220 further includes a peristaltic pump 222, an ultrasonic controller 223, and an ultrasonic atomizing nozzle 224.
  • the ultrasonic value is adjusted by the ultrasonic controller 223, and enters the pre-growth tube 210 via the ultrasonic atomizing nozzle 224 and the spray output tube 221.
  • the carbon source is a gas phase or liquid phase carbon source and may be a hydrocarbon such as acetylene, ethanol, methane, ethylene, propylene, butylene, n-hexane, carbon monoxide, and benzene.
  • a hydrocarbon such as acetylene, ethanol, methane, ethylene, propylene, butylene, n-hexane, carbon monoxide, and benzene.
  • the catalyst can be any one or combination of transition metals such as iron, diamond, nickel, and the like, as well as their oxides or other compounds.
  • a catalyst precursor can be employed which, under certain temperature conditions, decomposes the catalyst precursor to produce metal atoms.
  • the diameter of the catalyst particles determines the diameter of the carbon nanotubes, so that the carbon nanotubes having higher purity and uniform size distribution can be grown by selectively controlling the type and particle size of the catalyst.
  • the catalyst precursor can be ferrocene Fe(C 5 H 5 ) 2 .
  • the feedstock may also include an accelerator for increasing the activity of the catalyst.
  • the promoter can be thiophene, other sulfur containing compounds, or a combination thereof.
  • the promoter may be tetrahydrothiophene C 4 H 8 S.
  • a carrier gas can be introduced into the atomizer 220. After the liquid phase carbon source and other raw materials are atomized, they become uniformly distributed small droplets, and the carrier gas carries the raw materials into the pre-growth tube 210.
  • the carrier gas can be H 2 , He or any other inert gas. In one embodiment, the carrier gas may be a mixed gas of H 2 and Ar.
  • the introduction of the carrier gas is beneficial to control the atomization form after atomization of the liquid phase carbon source, so that the liquid carbon source after atomization rapidly reaches the high temperature reaction zone in the growth tube 230, and helps to maintain the continuity and stability of the raw material supply. Sex.
  • the temperature within the spray output tube 221 ranges from 100 to 250 degrees Celsius.
  • the mixed raw material in the spray output pipe 221 is prevented from being condensed on the inner wall of the spray output pipe 221.
  • the total carrier gas flow rate in the atomizer is controlled at 1-100 L/min
  • the liquid carbon source injection rate is controlled at 10-1500 ml/h
  • the gas carbon source injection flow rate is controlled at 1-100 L/min.
  • the pre-growth tube 210 has a front end and a rear end opposite the front end.
  • An extension channel is between the front end and the rear end.
  • the spray output tube 221 of the atomizer 220 is sealingly coupled to the front end of the pre-growth tube 210.
  • the spray output tube 221 can be hermetically fixed to the front end of the pre-growth tube 210 by providing a flange.
  • the diameter of the pre-growth tube 210 and the diameter of the growth tube 230 are equal.
  • the pre-growth tube 210 has a diameter of 50-500 mm and a length of 200-500 mm.
  • the length of the growth tube 230 is 500-2000 mm.
  • the carbon nanotube preparation system 200 further includes a gas curtain generator 240.
  • the air curtain generator 240 is configured to form an air curtain enclosing an atomizing airflow around the outlet of the spray output tube 221, the air curtain extending in a direction (A) extending parallel to the pre-growth tube 210.
  • the air curtain generator 240 is disposed within the pre-growth tube 210.
  • gas is apt to form turbulent flow in the furnace, which is not conducive to the stability of the subsequent process.
  • the stability of the gas flow is more difficult to control, and turbulence of the gas in the carbon nanotube preparation system 200 should be avoided as much as possible.
  • the ideal situation is to enable the gas to form a stable laminar flow.
  • a carrier gas is usually introduced into the raw material injection device to improve the uniformity of gasification of the liquid carbon source.
  • a liner is disposed between the raw material injection device and the reaction tube to guide the direction in which the carbon nanotubes grow.
  • the gas flow causes turbulence there.
  • impurities generated in the reaction are accumulated at the tail end of the liner, that is, at the junction of the liner and the reaction tube, so that the carbon nanotubes are easily located at the end of the liner at the tube wall. Viscous, resulting in the fracture of carbon nanotubes, directly affecting the continuous growth of carbon nanotubes. Therefore, the current technology still has shortcomings in the control of gas flow stability and avoiding the fracture of carbon nanotubes, which is not conducive to the stable and continuous process of the floating process. Especially in the large-diameter furnace tube floating catalytic reaction system, the above-mentioned deficiencies will be more obvious.
  • the above technical solution of the present invention actually eliminates the conventional liner and forms a gas curtain around the spray output tube 221 of the atomizer 220.
  • a laminar flow is formed in the pre-growth tube through the air curtain to stabilize the air flow, and on the other hand, the adhesion of the impurities or the carbon nanotubes is avoided, and the continuous growth of the carbon nanotubes is ensured.
  • the air curtain generator 240 includes at least one air curtain forming plate 241 having a plurality of air holes formed therein.
  • FIG. 3 is a schematic structural view of a gas curtain forming plate of one embodiment of FIG. 2; wherein FIG. 3a is a front view of the air curtain forming plate, FIG. 3b is a cross-sectional view of the air curtain forming plate along BB, and FIG. 3c is a cross-sectional view of FIG. A partially enlarged view at the dotted portion D.
  • the air curtain forming plate 241 is annular, and the spray output pipe 221 is located at the center hollow of the air curtain forming plate 241. The air holes are radially distributed on the air curtain forming plate 241.
  • an edge contour of the air curtain forming plate 241 is matched with an inner wall of the pre-growth tube 210, and at least a portion of the air holes are located at an edge region of the air curtain forming plate 241 to form a close-fitting portion.
  • the air curtain flow of the inner wall of the pre-growth tube 210 is described.
  • the air holes on the air curtain forming plate 241 are straight holes having the same aperture.
  • the number of the air curtain forming plates 241 may be plural.
  • the plurality of air curtain forming plates 241 are disposed one behind the other in the extending direction of the pre-growth tube 210.
  • the plurality of air curtain forming plates 241 are in parallel relationship with each other.
  • the air curtain generator 240 has 1-4 air curtain forming plates 241 therein.
  • FIG. 4 is a schematic structural view of a gas curtain forming plate of another embodiment of FIG. 2; wherein FIG. 4a is a front view of the air curtain forming plate, FIG. 4b is a cross-sectional view of the air curtain forming plate along CC, and FIG. 4c is a view of FIG. 4b.
  • FIG. 4c is a view of FIG. 4b.
  • the air holes on the air curtain forming plate 241 may be wide and narrow flared holes in front of the aperture.
  • the air holes are symmetrically distributed along the central hollow at the air curtain forming plate 241, and the number of air holes on one side is 2-6.
  • the diameter of the pores can be 10 cm.
  • the air curtain generator 240 further includes at least one air inlet 242 for inputting a carrier gas into the pre-growth tube, the air inlet 242 being located at a front end of the pre-growth tube 210.
  • the air curtain generator 240 includes two air inlets 242. Two air inlets 242 are distributed in two measurements of the spray output tube 221.
  • the air inlet 242 may be disposed on the flange, and the carrier gas enters the pre-growth tube 210 from the air inlet 242, and the airflow is formed uniformly through the 1-4 layer air curtain forming plate 241.
  • the total flow of the carrier gas input by the air curtain generator 240 is controlled to be in the range of 1-20 L/min.
  • the catalyst precursor After the raw material gas enters the pre-growth tube 210, it is first necessary to decompose the catalyst precursor to obtain a catalyst iron atom. It is then necessary to decompose the promoter to release a sulfur atom which can interact with the cluster of catalyst particles to control the size distribution of the catalyst particles, thereby controlling the diameter of the carbon nanotube structure. Finally, the carbon source is decomposed to grow carbon nanotubes on the catalyst particles. Among them, the temperature range of decomposition of the catalyst precursor, decomposition of the promoter, and decomposition of the carbon source are different. In order to ensure the smooth progress of the reaction and the quality of the carbon nanotubes, it is necessary to refine the reaction temperature in different regions in the pre-growth tube 210 and the growth tube 230 to form a gradient temperature.
  • a reaction including decomposition of the catalyst precursor and decomposition of the promoter is performed in the pre-growth tube 210, and decomposition of the carbon source and growth of the carbon nanotubes are performed in the growth tube 230. Therefore, the temperature inside the pre-growth tube 210 is different from the temperature inside the growth tube 230.
  • the temperature within the pre-growth tube 210 ranges from 200 to 950 degrees Celsius.
  • the temperature within the growth tube 230 ranges from 1100 to 1600 degrees Celsius.
  • the pre-growth tube 210 and the growth tube 230 are connected by a tubular first heat insulator 250.
  • the first heat insulator 250 serves to reduce mutual interference of temperatures between the pre-growth tube 210 and the growth tube 230.
  • the temperature in the growth tube 230 needs to reach 1100-1600 degrees Celsius.
  • the back end of the pre-growth tube is the temperature required for the decomposition of the accelerator, typically 700-950 degrees Celsius.
  • the first heat insulator 250 is made of a heat insulating material, and the diameter of the first heat insulator 250 is the same as that of the growth tube 230 and the pre-growth tube 210.
  • the first insulation member 250 and the growth tube 230 and the pre-growth tube 210 are respectively sealedly connected.
  • the first insulation member 250 is composed of a high temperature insulation material, and the high temperature insulation material may be one of high alumina brick, corundum, magnesia brick, and high temperature refractory fiber.
  • the first insulation member 250 has a diameter of 50-500 mm and a length of 50-200 mm.
  • the pre-growth tube 210 is segmented and includes at least a first pre-growth section 211 and a second pre-growth section 212.
  • the first pre-growth section 211 is a portion near the front end
  • the second pre-growth section 212 is a portion near the rear end.
  • the first pre-growth section 211 is a reaction zone in which the catalyst precursor is decomposed
  • the second pre-growth section 212 is a reaction zone in which the promoter is decomposed.
  • the temperature within the first pre-growth section 211 is different from the temperature within the second pre-growth section 212.
  • the temperature in the first pre-growth section of 211 is 200-300 degrees Celsius.
  • the temperature in the second pre-growth section 212 is 700-950 degrees Celsius.
  • first pre-growth section 211 and the second pre-growth section 212 are connected by a second heat insulator 260. It is used to reduce temperature interference between the first pre-growth section 211 and the second pre-growth section 212.
  • the second insulation 260 is constructed of a thermally insulating material.
  • the diameter of the second heat insulator 260 is the same as the diameter of the first pre-growth section 211 and the second pre-growth section 212.
  • the two sides of the second heat insulator 260 are respectively sealedly connected to the first pre-growth section 211 and the second pre-growth section 212.
  • the second insulating member 260 has a diameter of 50-500 mm and a length of 50-200 mm.
  • the first pre-growth section 211, the second pre-growth section 212, and the outer side of the growth tube 230 are further provided with a first temperature controller 271, a second temperature controller 272, and a third temperature controller 273, respectively.
  • the first temperature controller 271 is configured to control the temperature in the first pre-growth section 211, control the temperature in the first pre-growth section 211 within a certain range of values, and ensure uniform temperature distribution in the first pre-growth section 211.
  • the first temperature controller 271 includes a first heating device and a first cooling device.
  • the first temperature controller 271 can also include a number of temperature sensors that are capable of detecting temperature values within the first pre-growth section 211.
  • the second temperature controller 272 is configured to control the temperature in the second pre-growth section 212, control the temperature in the second pre-growth section 212 within a certain range of values, and ensure that the temperature distribution in the second pre-growth section 212 is uniform.
  • the second temperature controller 272 includes a second heating device and a second cooling device.
  • the second temperature controller 272 can also include a number of temperature sensors that are capable of detecting temperature values within the second pre-growth section 212.
  • the third temperature controller 273 is for controlling the temperature in the growth tube 230, controlling the temperature in the growth tube 230 within a certain range of values, and ensuring uniform temperature distribution in the growth tube 230.
  • the third temperature controller 273 includes a second heating device and a second cooling device.
  • the third temperature controller 273 can also include a number of temperature sensors that are capable of detecting temperature values within the growth tube 230.
  • the first heating device, the second heating device, and the third heating device may be by steam heating, hot water heating, mineral oil heating, electromagnetic induction heating, or resistance heating.
  • the first cooling device, the second cooling device, and the third cooling device may be in the form of refrigerant cooling, cooling water cooling, cooling oil cooling, and the like.
  • the invention refines the reaction zone and is divided into three parts: a first pre-growth tube, a second pre-growth tube and a growth tube.
  • a certain gap is set between each segment to reduce mutual interference.
  • the temperature accuracy is improved, which is beneficial to the fine control of the process and improves the quality of the carbon nanotubes.
  • the inner wall of the growth tube 230 is provided with an anti-stick coating for preventing the carbon nanomaterial from adhering to the inner wall of the growth tube.
  • the release coating is zirconia or zinc oxide.
  • the anti-adhesive coating has an arithmetic mean deviation Ra of the surface roughness profile of from 0.1 ⁇ m to 1 ⁇ m.
  • the growth tube 230 is provided with a vent hole for introducing a carrier gas to form a gas protective layer on the inner wall surface of the carrier gas, and the vent hole penetrates the wall of the growth tube and is uniform. distributed.
  • the angle between the axial direction of the vent and the direction of extension of the growth tube is less than 5 degrees.
  • the carrier gas is caused to form a gas protective layer on the inner wall surface.
  • the carbon nanotube preparation system 200 can be a horizontal distribution structure. That is, the atomizer 220, the pre-growth tube 210, and the growth tube 230 are placed in order in the horizontal direction.
  • the carbon nanotube preparation system 200 can be an upright distributed structure. That is, the atomizer 220, the pre-growth tube 210, and the growth tube 230 are sequentially placed in the vertical direction.
  • the air curtains formed by the air curtain generator 240 are distributed in parallel along the direction of gravity.
  • the carbon nanotube preparation system 200 can be an upright distributed structure.
  • Carbon nanotube collection system 300 and exhaust system 400 can be horizontal structures. To facilitate the collection of carbon nanotubes.
  • the carbon nanotube preparation system 200 is set to an upright type, which can overcome the influence of gravity and ensure the absolute laminar flow of the air curtain. Moreover, due to the action of gravity, the uniformity of the direction of the airflow in the pre-growth tube 210 and the growth tube 230 is also facilitated, and the airflow stability in the system can be greatly improved. This advantage is unmatched by horizontal systems.
  • the vertical system can be continuously produced for up to 15 hours, which is superior to the horizontal system (the general horizontal system can continuously produce about 5 hours).
  • the carbon nanotube film material obtained by the preparation system of the invention can reach a conductivity of 5 ⁇ 10 4 -5 ⁇ 10 5 S/m (measured by a four-probe resistivity tester), and the tensile strength is 80-200 MPa. (measured by a nanostretcher).

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Abstract

一种碳纳米管制备系统，包括预生长管(210)，用于碳纳米管生成前原料的前期预备反应。雾化器(220)用于将碳纳米管原料雾化后喷入预生长管(210)内。雾化器(220)设置在预生长管(210)的前端，雾化器(220)具有喷雾输出管(221)，喷雾输出管(221)延伸至预生长管(210)内。生长管(230)，用于碳纳米管的生成，和对生成的碳纳米管进行延续生长。生长管(230)的前端密封连接于预生长管(210)的后端。以及气幕发生器(240)，用于在喷雾输出管(221)的出口周围形成包裹雾化气流的气幕，气幕沿平行预生长管(210)延伸方向延伸。气幕发生器(240)设置在所述预生长管(210)内。该系统在喷雾输出管的周围形成气幕，一方面通过气幕在预生长管中形成层流，稳定气流，另一方面避免杂质或碳纳米管的粘黏，保证碳纳米管的延续性生长。

Description

碳纳米管制备系统 技术领域
本发明涉及碳纳米管制备设备，特别是涉及一种碳纳米管制备系统。
背景技术
作为典型的一维纳米材料，碳纳米管材料具有优异的力学、热学和电学性能，其应用领域广泛。国内外的很多高校、研究机构和公司都在研究如何能够合成宏观上性能更加优异的碳纳米管材料。
目前较为普遍的碳纳米管合成方法是基于化学气相沉积(CVD)法制备宏观碳纳米管材料，如碳纳米管薄膜和碳纳米管纤维。但是实验室阶段的研究和产业化大规模生产之间是有很大区别的，尤其是CVD工艺，随着设备尺寸的放大，不稳定因素的影响也在增大，很多实验室阶段没有显现的问题，在产业化时都会对碳纳米管材料的合成和品质带来显著的影响。因此，如何提高工艺的稳定性和生产的连续性，成为碳纳米管产业化中的重要问题。
现有技术中，有通过设置电场或磁场的方式，来引导和牵引碳纳米管生长方向和连续生长的方法。但是在产业化过程中，增加了设备的复杂性和控制难度，难以成熟的应用。因此，如何简易可行地提高工艺的稳定性和连续性仍是有待解决的问题。
发明内容
基于此，针对如何实现碳纳米管生产的稳定性和连续性的问题，有必要提供一种碳纳米管合成系统，让该系统能够保证工艺中的气流的稳定性，保证碳纳米管连续稳定合成，来促进碳纳米管材料生产的产业化。
本发明提供，一种碳纳米管制备系统，其特征在于，包括：
预生长管，用于碳纳米管生成前，原料的前期预备反应；
雾化器，用于将碳纳米管原料雾化后喷入所述预生长管内；所述雾化器设置在所述预生长管的前端，所述雾化器具有喷雾输出管，所述喷雾输出管延伸 至所述预生长管内；
生长管，用于碳纳米管的生成，和对生成的碳纳米管进行延续生长；所述生长管的前端密封连接于所述预生长管的后端；
以及气幕发生器，用于在所述喷雾输出管的出口周围形成包裹雾化气流的气幕，所述气幕沿平行所述预生长管延伸方向延伸；所述气幕发生器设置在所述预生长管内。
上述碳纳米管制备系统，在雾化器的喷雾输出管的周围形成气幕。一方面通过气幕在预生长管中形成层流，稳定气流，另一方面避免杂质或碳纳米管的粘黏，保证碳纳米管的延续性生长。
在其中一个实施例中，所述气幕发生器包括至少一个气幕形成板，所述气幕形成板上开设有多个气孔。
在其中一个实施例中，所述气幕形成板呈环形，所述喷雾输出管位于在所述气幕形成板的中心镂空处；所述气孔在所述气幕形成板上呈辐射状分布。
在其中一个实施例中，所述气幕形成板的边缘轮廓与所述预生长管的内壁相匹配，至少部分所述气孔位于所述气幕形成板的边缘区域，以形成紧贴所述预生长管内壁的气幕流。
在其中一个实施例中，所述气幕发生器还包括至少一个用于将载气输入所述预生长管的进气口，所述进气口位于所述预生长管的前端。
在其中一个实施例中，所述预生长管与所述生长管之间通过管状第一绝热件连接。
在其中一个实施例中，所述预生长管内的温度为200-950摄氏度；
所述生长管内的温度为1100-1600摄氏度。
在其中一个实施例中，所述预生长管包括第一预生长段和第二预生长段；
所述第一预生长段靠近所述预生长管的前端，所述第二预生长段靠近所述预生长管的后端；
所述第一预生长段内的温度和第二预生长段内的温度不同。
在其中一个实施例中，所述第一预生长段外设置有第一温度控制器，所述第二预生长段外设置第二温度控制器；
所述第一预生长段和所述第二预生长段之间通过第二绝热件连接。
在其中一个实施例中，所述第一温度控制器包括第一加热装置和第一冷却装置；
所述第二温度控制器包括第二加热装置和第二冷却装置。
在其中一个实施例中，所述第一预生长段内的温度为200-300摄氏度；
所述第二预生长段内的温度为700-950摄氏度。
在其中一个实施例中，所述生长管内壁设有用于防止所述纳米材料附着在所述生长管内壁上的防粘黏涂层。
在其中一个实施例中，所述防粘黏涂层为氧化锆或氧化锌。
在其中一个实施例中，所述生长管上开设有用于通入载气使所述载气在所述生长管内壁表面形成气体保护层的通气孔，所属通气孔贯穿所述生长管的管壁且均匀分布。
在其中一个实施例中，所述通气孔的轴向与所述生长管的延伸方向之间的夹角小于5度。
在其中一个实施例中，所述雾化器包括用于将所述原料均匀混合雾化后喷出的超声雾化喷嘴、和用于调节超声波数值的超声控制器。
在其中一个实施例中，所述纳米材料合成系统为直立式或卧式。
在其中一个实施例中，所述预生长管和所述生长管竖直设置，所述雾化器沿所述预生长管和所述生长管延伸方向竖直设置。
在其中一个实施例中，所述气幕沿重力方向平行分布。
附图说明
图1为产业化连续生产碳纳米管材料生产系统的一个实施例的结构示意图；
图2为本发明的一个实施例的碳纳米管合成系统的结构示意图；
图3为图2中的一个实施例的气幕形成板的结构示意图；其中图3a为气幕形成板的正视图，图3b为气幕形成板沿B-B的截面图，图3c为图3b中虚线部分D处的局部放大图；
图4为图2中的另一个实施例的气幕形成板的结构示意图；其中图4a为气 幕形成板的正视图，图4b为气幕形成板沿C-C的截面图，图4c为图4b中虚线部分E处的局部放大图。
具体实施方式
为使本发明的上述目的、特征和优点能够更加明显易懂，下面结合附图对本发明的具体实施方式做详细的说明。在下面的描述中阐述了很多具体细节以便于充分理解本发明。但是本发明能够以很多不同于在此描述的其它方式来实施，本领域技术人员可以在不违背本发明内涵的情况下做类似改进，因此本发明不受下面公开的具体实施例的限制。
目前，碳纳米管的制备方法基本上都是利用各种外加能量，将碳源分解成原子或离子形态，然后再聚集生成碳纳米管宏观材料。一般来说，碳纳米管主要的制备方法有三种，即电弧放电法、激光烧蚀法和化学气相沉积法。产业化中多采用化学气相沉积(CVD)法制备碳纳米管。
CVD制备碳纳米管主要是以气态或液态烃类物质作为碳源，将碳源雾化后，在适当的温度下，通过加入催化剂，碳源在催化剂颗粒表面裂解为碳原子团簇，然后碳原子重新组合形成碳纳米管，再通过特殊设计的收集装置得到形态不同碳纳米管材料。其中，催化剂与碳源一同，由载气一起携带进入炉体，该制备方式称之为浮动催化碳纳米管制备技术。本发明中主要采用浮动催化碳纳米管工艺来制备碳纳米管。
图1为产业化连续生产碳纳米管材料生产系统的一个实施例的结构示意图。如图1所示，碳纳米管的生产系统100包括碳纳米管制备系统200、碳纳米管收集系统300以及排气系统400。碳纳米管制备系统200用于将原料合成制备成连续的碳纳米管。碳纳米管收集系统300用于将制备的碳纳米管进行致密，并加工成型为所需要的材料，并进行收集。碳纳米管收集系统300可以将碳纳米管加工成线材或薄膜片材后收集成卷。排气系统400用于将反应后的气体进行收集并统一处理，以避免生产系统100内的有害气体排出到大气中，并避免生产系统100内的剩余气体干扰内部气流的稳定性。
图2是本发明的一个实施例的碳纳米管制备系统的结构示意图。如图2所 示，碳纳米管制备系统200包括预生长管210、雾化器220、生长管230以及气幕发生器240。预生长管210用于碳纳米管生成前，原料的前期预备反应。雾化器220用于将碳纳米管原料雾化后喷入所述预生长管210内。所述雾化器220设置在所述预生长管210的前端。所述雾化器220具有喷雾输出管221，所述喷雾输出管221延伸至所述预生长管210内。生长管230用于碳纳米管的生成，和对生成的碳纳米管进行延续生长。所述生长管230的前端密封连接于所述预生长管的后端。
如图2所示，在一个实施例中，雾化器220还包括蠕动泵222、超声控制器223和超声雾化喷嘴224。反应原料在蠕动泵222中均匀混合后，通过超声控制器223调节超声波数值，经由超声雾化喷嘴224、喷雾输出管221进入预生长管210。
在一个实施例中，碳源为气相或液相碳源，可以是乙炔、乙醇、甲烷、乙烯、丙烯、丁烯、正己烷、一氧化碳及苯等烃类物质。
在一个实施例中，催化剂可以是铁、钻、镍等过渡金属的任意一种或几种组合，以及他们的氧化物或其他化合物。
在一个实施例中，可以采用催化剂前体，在一定温度条件下，催化剂前体分解产生金属原子。催化剂颗粒的直径决定着碳纳米管的直径，因此可通过选择控制催化剂种类与粒径，来生长纯度较高，尺寸分布较均匀的碳纳米管。在一个实施例中，催化剂前体可以是二茂铁Fe(C 5H 5) 2。
在一个实施例中，原料还可以包括促进剂，用于增加催化剂的活性。促进剂可以是噻吩、其它含硫化合物或其组合。促进剂可以是四氢噻吩C 4H 8S。
在一个实施例中，可以向雾化器220内通入载气。液相碳源和其他原料经雾化后，变成均匀分布的小液滴，通过载气携带原料进入至预生长管210中。载气可以采用H 2，He或任何其他惰性气体。在一个实施例中，载气可以为H 2和Ar的混合气体。通入载气有利于控制液相碳源雾化后的雾化形态，使雾化以后的液态碳源快速到达生长管230内的高温反应区，并有助于保持原料供应的持续性和稳定性。
在一个实施例中，喷雾输出管221内的温度范围为100-250摄氏度。以防止 喷雾输出管221内的混合原料在喷雾输出管221的内壁上凝结。
在一个实施例中，雾化器内的载气总流量控制在1-100L/min，液体碳源注入速率控制在10-1500ml/h,气体碳源注入气流控制在1-100L/min。以保证原料输入和碳纳米管合成速率基本一致，有助于碳纳米管生产的连续性。
在一个实施例中，预生长管210具有一前端和与所述前端相对的后端。在所述前端和所述后端之间为一延伸通道。
在一个实施例中，雾化器220的喷雾输出管221与预生长管210的前端密封连接。可通过设置法兰将喷雾输出管221密封固定在预生长管210的前端。
在一个实施例中，预生长管210的管径和生长管230的管径相等。
在一个实施例中，预生长管210的管径为50-500mm，长度为200-500mm。生长管230的长度为500-2000mm。
参见图2，碳纳米管制备系统200还包括气幕发生器240。气幕发生器240用于在所述喷雾输出管221的出口周围形成包裹雾化气流的气幕，所述气幕沿平行所述预生长管210延伸方向(A)延伸。所述气幕发生器240设置在所述预生长管210内。
需要理解的是，在CVD工艺中，气体在炉体内容易形成湍流，不利于后续工艺的稳定。特别是在产业化的工艺中，设备尺寸放大后，气流的稳定性控制的难度加大，应尽可能的避免气体在碳纳米管制备系统200中形成湍流。最理想的情况就是使气体能够形成稳定的层流。现有技术中，通常在原料注入装置中通入载气，以提高液态碳源气化的均匀性。并在原料注入装置和反应管之间设置衬管，以引导碳纳米管生长的方向。但在衬管和反应管的交界处，由于截面积的改变，使得气流在此处会产生湍流。另一方面，随着反应时间的加长，会在衬管的尾端，即在衬管和反应管交界处，积累反应中产生的杂质，使得碳纳米管在衬管的尾端容易在管壁处粘黏，导致碳纳米管的断裂，直接影响碳纳米管的延续性生长。因此，目前的技术仍然在气流稳定控制方面和避免碳纳米管断裂方面存在不足，不利于浮动工艺的稳定连续。特别是在大管径炉管浮动催化反应体系中，上述不足将更加明显。
本发明的上述技术方案，实际是将传统的衬管取消，在雾化器220的喷雾 输出管221的周围形成气幕。一方面通过气幕在预生长管中形成层流，稳定气流，另一方面避免杂质或碳纳米管的粘黏，保证碳纳米管的延续性生长。
在一个实施例中，气幕发生器240包括至少一个气幕形成板241，所述气幕形成板241上开设有多个气孔。
图3是图2中的一个实施例的气幕形成板的结构示意图；其中图3a为气幕形成板的正视图，图3b为气幕形成板沿B-B的截面图，图3c为图3b中虚线部分D处的局部放大图。参见图2和图3所示，所述气幕形成板241呈环形，所述喷雾输出管221位于在所述气幕形成板241的中心镂空处。所述气孔在所述气幕形成板241上呈辐射状分布。
在一个实施例中，所述气幕形成板241的边缘轮廓与所述预生长管210的内壁相匹配，至少部分所述气孔位于所述气幕形成板241的边缘区域，以形成紧贴所述预生长管210内壁的气幕流。
如图3c所示，气幕形成板241上的气孔为孔径一致的直孔。
在一个实施例中，气幕形成板241的数量可以是多个。多个气幕形成板241之间为沿预生长管210延伸方向前后叠加设置。多个气幕形成板241之间互为平行关系。
在一个实施例中，气幕发生器240中具有1-4个气幕形成板241。
图4为图2中的另一个实施例的气幕形成板的结构示意图；其中图4a为气幕形成板的正视图，图4b为气幕形成板沿C-C的截面图，图4c为图4b中虚线部分E处的局部放大图。如图4c所示，气幕形成板241上的气孔可以为孔径前宽后窄的喇叭形孔。
在一个实施例中，气孔在气幕形成板241沿中心镂空处对称分布，一侧气孔的数量为2-6个。气孔的直径可以是10cm。
如图2所示，所述气幕发生器240还包括至少一个用于将载气输入所述预生长管的进气口242，所述进气口242位于所述预生长管210的前端。
在一个实施例中，气幕发生器240包括两个进气口242。两个进气口242分布在喷雾输出管221的两测。进气口242可以设置在法兰上，载气由进气口242进入预生长管210，经由1-4层气幕形成板241形成分布均匀且方向一致的气流。
在一个实施例中，气幕发生器240输入的载气总流量控制在1-20L/min范围内。
原料气体进入预生长管210后，首先需要将催化剂前体分解，得到催化剂铁原子。随后需要将促进剂分解，释放出硫原子，硫可以与催化剂颗粒簇相互作用，以控制催化剂颗粒的尺寸分布，从而控制碳纳米管结构体的直径。最后碳源分解，在催化剂颗粒上生长碳纳米管。其中，催化剂前体分解、促进剂分解和碳源分解的温度范围都不同。为保证反应的顺利进行和碳纳米管的质量，需要在预生长管210和生长管230内细化不同区域内的反应温度，形成梯度温度。
在一个实施例中，预生长管210内进行包括催化剂前体分解和促进剂分解的反应，在生长管230内进行碳源的分解和碳纳米管的生长。因此，所述预生长管210内的温度和生长管230内的温度不同。
在一个实施例中，所述预生长管210内的温度范围为200-950摄氏度。所述生长管230内的温度范围为1100-1600摄氏度。
如图2所示，在一个实施例中，所述预生长管210与所述生长管230之间通过管状的第一绝热件250连接。
第一绝热件250用于减少预生长管210和生长管230之间的温度的相互干扰。为保证碳源的分解，生长管230内的温度需要达到1100-1600摄氏度。而预生长管的后端，为促进剂分解所需的温度，一般为700-950摄氏度。预生长管210和生长管230之间具有一定的温度差。保证各个区域温度的相对独立性，避免相关干扰，在预生长管210和生长管230之间分离一定的距离，并通过具有绝热作用的第一绝热件250连接，以减少不同区域之间的干扰。
在一个实施例中，第一绝热件250由绝热材料构成，并且第一绝热件250的管径和生长管230、预生长管210的管径相同。第一绝热件250和生长管230及预生长管210分别密封连接。
在一个实施例中，第一绝热件250由高温绝热材料构成，高温绝热材料可以为高铝砖、刚玉、镁砖及高温耐火纤维中的一种。
在一个实施例中，第一绝热件250的管径为50-500mm，长度为50-200mm。
如图2所示，在一个实施例中所述预生长管210为分段式，至少包括第一预生长段211和第二预生长段212。第一预生长段211为靠近所述前端的部分，第二预生长段212为靠近所述后端的部分。第一预生长段211为催化剂前体分解的反应区域，第二预生长段212为促进剂分解的反应区域。第一预生长段211内的温度和第二预生长段212内的温度不同。
在一个实施例中，所211述第一预生长段内的温度为200-300摄氏度。所述第二预生长段212内的温度为700-950摄氏度。
在一个实施例中，所述第一预生长段211和所述第二预生长段212之间通过第二绝热件260连接。用于减小所述第一预生长段211和所述第二预生长段212之间的温度干扰。
在一个实施例中，第二绝热件260由绝热材料构成。第二绝热件260的管径和第一预生长段211、第二预生长段212的管径相同。第二绝热件260两侧和第一预生长段211、第二预生长段212分别密封连接。
在一个实施例中，第二绝热件260的管径为50-500mm，长度为50-200mm。
如图2所示，第一预生长段211、第二预生长段212和生长管230的外侧还分别设置有第一温度控制器271、第二温度控制器272和第三温度控制器273。
第一温度控制器271用于控制第一预生长段211内的温度，将第一预生长段211内的温度控制在一定数值范围内，并保证第一预生长段211内的温度分布均匀。
在一个实施例中，第一温度控制器271包括第一加热装置和第一冷却装置。第一温度控制器271还可包括若干温度传感器，所述温度传感器能够检测第一预生长段211内的温度值。
第二温度控制器272用于控制第二预生长段212内的温度，将第二预生长段212内的温度控制在一定数值范围内，并保证第二预生长段212内的温度分布均匀。在一个实施例中，第二温度控制器272包括第二加热装置和第二冷却装置。第二温度控制器272还可包括若干温度传感器，所述温度传感器能够检测第二预生长段212内的温度值。
第三温度控制器273用于控制生长管230内的温度，将生长管230内的温 度控制在一定数值范围内，并保证生长管230内的温度分布均匀。在一个实施例中，第三温度控制器273包括第二加热装置和第二冷却装置。第三温度控制器273还可包括若干温度传感器，所述温度传感器能够检测生长管230内的温度值。
在一个实施例中，第一加热装置、第二加热装置和第三加热装置可以采用蒸汽加热、热水加热、矿物油加热、电磁感应加热或电阻加热等方式。
在一个实施例中，第一冷却装置、第二冷却装置和第三冷却装置可以是制冷剂冷却、冷却水冷却、冷却油冷却等方式。
本发明将反应区域进行细化，分为第一预生长管、第二预生长管和生长管三部分。每段之间设置有一定间隙，减少相互之间干扰。通过分段管理，提高温度精度，有利于工艺的精细化控制，提高碳纳米管的质量。
在一个实施例中，生长管230内壁设有用于防止所述碳纳米材料附着在所述生长管内壁上的防粘黏涂层。
在一个实施例中，所述防粘黏涂层为氧化锆或氧化锌。
在产业化连续生产碳纳米管的过程中，由于碳纳米管的断裂导致的生产无法继续进行，是阻碍连续生产碳纳米管最重要的因素。其中，碳纳米管在管壁的附着和粘黏是导致碳纳米管断裂的主要原因。通过在生长管230的内壁上制备氧化锆或氧化锌耐高温的防粘黏涂层，有利于减少碳纳米管在管壁上的附着和粘黏。
在一个实施例中，防粘黏涂层的表面粗糙度轮廓算术平均偏差Ra为0.1μm～1μm。
在一个实施例中，所述生长管230上开设有用于通入载气使所述载气在所述内壁表面形成气体保护层的通气孔，所属通气孔贯穿所述生长管的管壁且均匀分布。通过在靠近生长管230的内壁处设置保护气体，能够避免碳纳米管的粘黏，并有利于引导碳纳米管的移动方向，辅助碳纳米管的收集。
在一个实施例中，所述通气孔的轴向与所述生长管的延伸方向之间的夹角小于5度。使所述载气在所述内壁表面形成气体保护层。
在一个实施例中，碳纳米管制备系统200可以为卧式分布结构。即雾化器 220、预生长管210和生长管230沿水平依次放置。
在一个实施例中，碳纳米管制备系统200可以为直立式分布结构。即雾化器220、预生长管210和生长管230沿竖直方向依次放置。以使气幕发生器240形成的所述气幕沿重力方向平行分布。
在一个实施例中，碳纳米管制备系统200可以为直立式分布结构。碳纳米管收集系统300和排气系统400可以是卧式结构。以方便碳纳米管的收集。
需要理解的是，在卧式结构中，气体会受重力的影响，难以保证气幕能够在水平方向上保持绝对的水平方向的层流。而将碳纳米管制备系统200设置为直立式，可以克服重力的影响，保证气幕的绝对层流。并且由于重力的作用，还会有利于预生长管210和生长管230内气流的方向的一致性，能够极大的提高系统中的气流稳定性。这一优势是卧式系统无法比拟的。
在实际应用中，直立式的系统可连续生产达15小时，优于卧式的系统(一般卧式的系统可连续性生产5小时左右)。
通过本发明的制备系统得到的碳纳米管薄膜材料，性能可达到电导率5×10 4-5×10 5S/m(采用四探针电阻率测试仪测量得到)，拉伸强度80-200MPa(采用纳米拉伸仪测量得到)。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (19)

  1. 一种碳纳米管制备系统，其特征在于，包括：
    预生长管，用于碳纳米管生成前原料的前期预备反应；
    雾化器，用于将碳纳米管原料雾化后喷入所述预生长管内；所述雾化器设置在所述预生长管的前端，所述雾化器具有喷雾输出管，所述喷雾输出管延伸至所述预生长管内；
    生长管，用于碳纳米管的生成，和对生成的碳纳米管进行延续生长；所述生长管的前端密封连接于所述预生长管的后端；
    以及气幕发生器，用于在所述喷雾输出管的出口周围形成包裹雾化气流的气幕，所述气幕沿平行所述预生长管延伸方向延伸；所述气幕发生器设置在所述预生长管内。
  2. 根据权利要求1所述的碳纳米管制备系统，其特征在于，
    所述气幕发生器包括至少一个气幕形成板，所述气幕形成板上开设有多个气孔。
  3. 根据权利要求2所述的碳纳米管制备系统，其特征在于，
    所述气幕形成板呈环形，所述喷雾输出管位于在所述气幕形成板的中心镂空处；所述气孔在所述气幕形成板上呈辐射状分布。
  4. 根据权利要求2或3所述的碳纳米管制备系统，其特征在于，
    所述气幕形成板的边缘轮廓与所述预生长管的内壁相匹配，至少部分所述气孔位于所述气幕形成板的边缘区域，以形成紧贴所述预生长管内壁的气幕流。
  5. 根据权利要求2或3所述的碳纳米管制备系统，其特征在于，
    所述气幕发生器还包括至少一个用于将载气输入所述预生长管的进气口，所述进气口位于所述预生长管的前端。
  6. 根据权利要求1-3中任一项所述的碳纳米管制备系统，其特征在于，
    所述预生长管与所述生长管之间通过管状第一绝热件连接。
  7. 根据权利要求6所述的碳纳米管制备系统，其特征在于，
    所述预生长管内的温度为200-950摄氏度；
    所述生长管内的温度为1100-1600摄氏度。
  8. 根据权利要求1-3中任一项所述的碳纳米管制备系统，其特征在于，
    所述预生长管包括第一预生长段和第二预生长段；
    所述第一预生长段靠近所述预生长管的前端，所述第二预生长段靠近所述预生长管的后端；
    所述第一预生长段内的温度和第二预生长段内的温度不同。
  9. 根据权利要求8所述的碳纳米管制备系统，其特征在于，
    所述第一预生长段外设置有第一温度控制器，所述第二预生长段外设置第二温度控制器；
    所述第一预生长段和所述第二预生长段之间通过第二绝热件连接。
  10. 根据权利要求9所述的碳纳米管制备系统，其特征在于，
    所述第一温度控制器包括第一加热装置和第一冷却装置；
    所述第二温度控制器包括第二加热装置和第二冷却装置。
  11. 根据权利要求8所述的碳纳米管制备系统，其特征在于，
    所述第一预生长段内的温度为200-300摄氏度；
    所述第二预生长段内的温度为700-950摄氏度。
  12. 根据权利要求1-3中任一项所述的碳纳米管制备系统，其特征在于，
    所述生长管内壁设有用于防止所述纳米材料附着在所述生长管内壁上的防粘黏涂层。
  13. 根据权利要求12所述的碳纳米管制备系统，其特征在于，
    所述防粘黏涂层为氧化锆或氧化锌。
  14. 根据权利要求1-3中任一项所述的碳纳米管制备系统，其特征在于，
    所述生长管上开设有用于通入载气使所述载气在所述生长管内壁表面形成气体保护层的通气孔，所属通气孔贯穿所述生长管的管壁且均匀分布。
  15. 根据权利要求14所述的碳纳米管制备系统，其特征在于，
    所述通气孔的轴向与所述生长管的延伸方向之间的夹角小于5度。
  16. 根据权利要求1-3中任一项所述的碳纳米管制备系统，其特征在于，
    所述雾化器包括用于将所述原料均匀混合雾化后喷出的超声雾化喷嘴、和用于调节超声波数值的超声控制器。
  17. 根据权利要求1-3中任一项所述的碳纳米管制备系统，其特征在于，
    所述纳米材料合成系统为直立式或卧式。
  18. 根据权利要求17所述的碳纳米管制备系统，其特征在于，
    所述预生长管和所述生长管竖直设置，所述雾化器沿所述预生长管和所述生长管延伸方向竖直设置。
  19. 根据权利要求18所述的碳纳米管制备系统，其特征在于，
    所述气幕沿重力方向平行分布。
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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1962426A (zh) * 2005-11-10 2007-05-16 鸿富锦精密工业（深圳）有限公司 碳纳米管制备装置
EP1810949A1 (en) * 2004-09-24 2007-07-25 Japan Science and Technology Agency Process and apparatus for producing carbon nanostructure
CN101372329A (zh) * 2007-08-21 2009-02-25 细美事有限公司 生成碳纳米管的方法和装置
US20100247419A1 (en) * 2006-11-01 2010-09-30 Nguyen Khe C Solid phase synthesized carbon nano fiber and tube
CN203558855U (zh) * 2013-09-05 2014-04-23 武汉博力信纳米科技有限公司 超声雾化辅助制备连续碳纳米管聚集体的装置
CN104641028A (zh) * 2013-06-18 2015-05-20 Lg化学株式会社 制备碳纳米管纤维的装置及利用所述装置制备碳纳米管纤维的方法
CN106145089A (zh) * 2016-08-31 2016-11-23 无锡东恒新能源科技有限公司 批量生产碳纳米管的合成装置
CN107075744A (zh) * 2014-10-28 2017-08-18 Lg化学株式会社 用于制备碳纳米管纤维的装置以及使用其制备碳纳米管纤维的方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7874250B2 (en) * 2005-02-09 2011-01-25 Schlumberger Technology Corporation Nano-based devices for use in a wellbore
NO326571B1 (no) * 2005-06-16 2009-01-12 Sinvent As Fremgangsmate og reaktor for fremstilling av karbon nanoror
US8337979B2 (en) * 2006-05-19 2012-12-25 Massachusetts Institute Of Technology Nanostructure-reinforced composite articles and methods
EP2753733B1 (en) * 2011-09-07 2017-04-26 Conyar B.V. Carbon nanotubes fiber having low resistivity, high modulus and/or high thermal conductivity and a method of preparing such fibers by spinning using a fiber spin-dope
RU2497752C2 (ru) * 2011-11-29 2013-11-10 Инфра Текнолоджис Лтд. Способ получения длинных углеродных нанотрубок и устройство для осуществления этого способа
TWI480417B (zh) * 2012-11-02 2015-04-11 Ind Tech Res Inst 具氣幕之氣體噴灑裝置及其薄膜沉積裝置
KR102002857B1 (ko) 2015-11-27 2019-07-24 주식회사 엘지화학 탄소나노튜브섬유 제조장치 및 이를 이용한 탄소나노튜브섬유 제조방법
JP6368732B2 (ja) * 2016-03-29 2018-08-01 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
US11326253B2 (en) * 2016-04-27 2022-05-10 Applied Materials, Inc. Atomic layer deposition of protective coatings for semiconductor process chamber components

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1810949A1 (en) * 2004-09-24 2007-07-25 Japan Science and Technology Agency Process and apparatus for producing carbon nanostructure
CN1962426A (zh) * 2005-11-10 2007-05-16 鸿富锦精密工业（深圳）有限公司 碳纳米管制备装置
US20100247419A1 (en) * 2006-11-01 2010-09-30 Nguyen Khe C Solid phase synthesized carbon nano fiber and tube
CN101372329A (zh) * 2007-08-21 2009-02-25 细美事有限公司 生成碳纳米管的方法和装置
CN104641028A (zh) * 2013-06-18 2015-05-20 Lg化学株式会社 制备碳纳米管纤维的装置及利用所述装置制备碳纳米管纤维的方法
CN203558855U (zh) * 2013-09-05 2014-04-23 武汉博力信纳米科技有限公司 超声雾化辅助制备连续碳纳米管聚集体的装置
CN107075744A (zh) * 2014-10-28 2017-08-18 Lg化学株式会社 用于制备碳纳米管纤维的装置以及使用其制备碳纳米管纤维的方法
CN106145089A (zh) * 2016-08-31 2016-11-23 无锡东恒新能源科技有限公司 批量生产碳纳米管的合成装置

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