WO2019178724A1 - 一种减震型光伏背板 - Google Patents
一种减震型光伏背板 Download PDFInfo
- Publication number
- WO2019178724A1 WO2019178724A1 PCT/CN2018/079480 CN2018079480W WO2019178724A1 WO 2019178724 A1 WO2019178724 A1 WO 2019178724A1 CN 2018079480 W CN2018079480 W CN 2018079480W WO 2019178724 A1 WO2019178724 A1 WO 2019178724A1
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- WO
- WIPO (PCT)
- Prior art keywords
- metal substrate
- grooves
- elastic strips
- metal
- resin layer
- Prior art date
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- 239000002250 absorbent Substances 0.000 title abstract 3
- 229910052751 metal Inorganic materials 0.000 claims abstract description 107
- 239000002184 metal Substances 0.000 claims abstract description 107
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 239000011347 resin Substances 0.000 claims abstract description 38
- 229920005989 resin Polymers 0.000 claims abstract description 38
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 14
- 229920001971 elastomer Polymers 0.000 claims description 13
- 238000007747 plating Methods 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 12
- -1 polytetrafluoroethylene Polymers 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052742 iron Inorganic materials 0.000 claims description 7
- 239000010935 stainless steel Substances 0.000 claims description 7
- 229910001220 stainless steel Inorganic materials 0.000 claims description 7
- 229910000861 Mg alloy Inorganic materials 0.000 claims description 6
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 claims description 6
- 229920002620 polyvinyl fluoride Polymers 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 239000002033 PVDF binder Substances 0.000 claims description 4
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 4
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 claims description 3
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 230000035939 shock Effects 0.000 abstract description 7
- 238000002835 absorbance Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 9
- 239000003245 coal Substances 0.000 description 4
- 238000013016 damping Methods 0.000 description 4
- 239000003921 oil Substances 0.000 description 4
- 239000003292 glue Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 230000032683 aging Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 229920001038 ethylene copolymer Polymers 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the invention relates to the technical field of photovoltaic cells, in particular to a shock-absorbing photovoltaic backsheet.
- crystalline silicon solar cells have been widely used due to their high efficiency and mature manufacturing process.
- Corresponding crystalline silicon solar modules usually include tempered glass, glue layer, battery sheet layer, glue layer and solar battery back plate.
- the solar battery back plate is located at the back of the solar cell module to protect and support the battery sheet and has reliable performance. Insulation, water resistance, aging resistance.
- a commonly used solar cell backsheet is a TPT backsheet which is formed by a three-layer film of polyvinyl fluoride, polyethylene terephthalate, and polyvinyl fluoride bonded by a glue and hot pressed.
- the existing TPT backplane has poor thermal conductivity and cannot support and protect the solar cell panel, thereby affecting the service life of the corresponding solar cell module.
- the upper surface of the first metal substrate is provided with a plurality of first trenches arranged in parallel, and a bottom surface of the first trench is curved;
- An outer weather resistant resin layer the outer weather resistant resin layer being disposed on a lower surface of the first metal substrate;
- the lower surface of the second metal substrate is provided with a plurality of second grooves arranged in parallel corresponding to each of the first grooves, and an upper surface of the second metal substrate is provided with a plurality of parallel-arranged third grooves corresponding to each of the second grooves, the bottom surfaces of the second grooves and the third grooves are curved, and the other portion of the first elastic strip Embedded in the second trench, having a first gap between the adjacent first elastic strips exposing the first metal substrate and the second metal substrate;
- a third metal substrate a lower surface of the third metal substrate is provided with a plurality of fourth grooves arranged in parallel corresponding to each of the third grooves, and a bottom surface of the fourth groove is curved Another portion of the second elastic strip is embedded in the fourth groove, and a second gap between the adjacent second elastic strips exposing the second metal substrate and the third metal substrate;
- the inner weather resistant resin layer is provided on the upper surface of the third metal substrate.
- the damper type photovoltaic back sheet further, the material of the first, second, and third metal substrates is aluminum, copper, iron, aluminum-magnesium alloy or stainless steel, and the first, second, and third metal substrates The thickness is 200-400 microns.
- the damper type photovoltaic back sheet further, the first elastic strip and the second elastic strip comprise a metal core, a rubber layer disposed on the surface of the metal core, a metal plating layer disposed on the surface of the rubber layer, the first elasticity
- the strip and the second elastic strip have a diameter of 300-500 microns.
- the damping metal type photovoltaic backing plate further has a material of aluminum, copper, iron, aluminum-magnesium alloy or stainless steel, and the metal plating layer is made of copper, nickel, silver or chromium.
- the shock-absorbing photovoltaic back sheet, further, the outer weather resistant resin layer and the inner weather resistant resin layer are made of polytetrafluoroethylene, polychlorotrifluoroethylene, polyvinylidene fluoride, polyvinyl fluoride or ethylene-tetrafluoroethylene.
- the ethylene copolymer, the outer weather resistant resin layer and the inner weather resistant resin layer each have a thickness of 60 to 90 ⁇ m.
- the damping type photovoltaic backing plate further has a spacing of adjacent first elastic strips of 400-800 micrometers and a spacing of adjacent second elastic strips of 400-800 micrometers.
- the damping type photovoltaic backing plate further, wherein the first, second, third, and fourth grooves have the same maximum depth, and the first and second elastic strips have the same diameter, the first, The ratio of the maximum depth of the second, third, and fourth grooves to the diameter of the first and second elastic strips is 0.2-0.3.
- the elastic strip has excellent elasticity and stability by optimizing the structure, material and size of the elastic strip.
- the shock absorbing photovoltaic back plate has excellent shock absorbing performance, effectively avoiding damage of the photovoltaic module due to collision, and simultaneously providing a plurality of gaps between the adjacent elastic strips exposing the metal substrate, which can effectively corresponding the photovoltaic module
- the heat generated during the work is dissipated through the gap, and the improved corresponding photovoltaic module has excellent heat dissipation performance.
- the structure of the shock absorbing back plate of the invention is a laminated structure, and the design of the two rows of elastic strips can make the shock absorbing effect better, and the bottom surface of the groove in the metal substrate is curved, which increases the contact between the elastic strip and the metal substrate. The area makes the contact between the elastic strip and the metal substrate firmer.
- FIG. 1 is a schematic structural view of a shock absorbing photovoltaic back sheet of the present invention.
- FIG. 2 is a schematic cross-sectional view of the first and second elastic strips of the present invention.
- the present invention provides a damped photovoltaic backplane, comprising: a first metal substrate 1 , the upper surface of the first metal substrate 1 is provided with a plurality of first trenches 11 arranged in parallel, The bottom surface of the first trench 11 has an arc shape; an outer weather resistant resin layer 2, the outer weather resistant resin layer 2 is disposed on a lower surface of the first metal substrate 1, and a plurality of first elastic strips 3, each of which is a portion of the first elastic strip 3 is embedded in the corresponding first trench 11; a second metal substrate 4, the lower surface of the second metal substrate 4 is disposed corresponding to each of the first trenches 11 a plurality of second grooves 41 arranged in parallel, the upper surface of the second metal substrate 4 is provided with a plurality of third grooves 42 arranged in parallel corresponding to each of the second grooves 41, The bottom surface of the second groove 41 and the third groove 42 are both curved, and another portion of the first elastic strip 3 is embedded in the second groove 41 between adjacent first elastic strips
- the first, second, and third metal substrates (1, 4, 7) are made of aluminum, copper, iron, aluminum-magnesium alloy or stainless steel, and the first, second, and third metal substrates are The thickness of (1, 4, 7) is 200-400 microns. If the metal substrate is too thin, the supporting performance is poor. When the metal substrate is too thick, it takes up more space, and the overall thickness of the backing plate is thicker, which increases the manufacturing cost.
- the first elastic strip 3 and the second elastic strip 6 each include a metal core 361, a rubber layer 362 disposed on the surface of the metal core 361, and a metal disposed on the surface of the rubber layer 362.
- the plating layer 363, the first elastic strip 3 and the second elastic strip 6 have a diameter of 300-500 micrometers, and the metal core 361 is made of aluminum, copper, iron, aluminum-magnesium alloy or stainless steel, and the metal plating layer
- the material of 363 is copper, nickel, silver or chrome.
- the elastic strip of the above structure has excellent seismic performance, and the presence of the metal core can improve the mechanical strength of the elastic strip, thereby improving the service life thereof, and the presence of the metal plating layer can prevent the rubber layer from aging due to illumination.
- the outer weather resistant resin layer 2 and the inner weather resistant resin layer 9 are made of polytetrafluoroethylene, polychlorotrifluoroethylene, polyvinylidene fluoride, polyvinyl fluoride or ethylene-tetrafluoroethylene copolymer.
- the thickness of the outer weather resistant resin layer 2 and the inner weather resistant resin layer 9 are both 60 to 90 ⁇ m.
- the spacing of the adjacent first elastic strips 3 is 400-800 micrometers
- the spacing of adjacent second elastic strips 6 is 400-800 micrometers
- the spacing of adjacent elastic strips is too large, resulting in a decrease in the number of elastic strips.
- the damping performance of the photovoltaic backplane is affected, and the spacing of adjacent elastic strips is too small, which will affect the heat dissipation performance of the photovoltaic backplane.
- the first, second, third, and fourth grooves (11, 41, 42, 71) have the same maximum depth h, and the first and second elastic strips (3, 6) have the same diameter.
- the present invention provides a damped photovoltaic backplane, comprising: a first metal substrate 1 , the upper surface of the first metal substrate 1 is provided with a plurality of first trenches 11 arranged in parallel, The bottom surface of the first trench 11 has an arc shape; an outer weather resistant resin layer 2, the outer weather resistant resin layer 2 is disposed on a lower surface of the first metal substrate 1, and a plurality of first elastic strips 3, each of which is a portion of the first elastic strip 3 is embedded in the corresponding first trench 11; a second metal substrate 4, the lower surface of the second metal substrate 4 is disposed corresponding to each of the first trenches 11 a plurality of second grooves 41 arranged in parallel, the upper surface of the second metal substrate 4 is provided with a plurality of third grooves 42 arranged in parallel corresponding to each of the second grooves 41, The bottom surface of the second groove 41 and the third groove 42 are both curved, and another portion of the first elastic strip 3 is embedded in the second groove 41 between adjacent first elastic strips
- the material of the first, second, and third metal substrates (1, 4, 7) is aluminum, and the thickness of the first, second, and third metal substrates (1, 4, 7) is 300 micrometers.
- the first elastic strip 3 and the second elastic strip 6 each include a metal core 361, a rubber layer 362 disposed on the surface of the metal core 361, and a metal plating layer 363 disposed on the surface of the rubber layer 362.
- the first elastic strip 3 and the second elastic strip 6 have a diameter of 400 ⁇ m, the metal core 361 is made of aluminum, and the metal plating layer 363 is made of copper.
- the outer weather resistant resin layer 2 and the inner weather resistant resin layer 9 are made of polytetrafluoroethylene, and the outer weather resistant resin layer 2 and the inner weather resistant resin layer 9 each have a thickness of 80 ⁇ m.
- the spacing between adjacent first elastic strips 3 is 600 micrometers, and the spacing of adjacent second elastic strips 6 is 600 micrometers.
- the first, second, third, and fourth grooves (11, 41, 42, 71) have the same maximum depth h, and the first and second elastic strips (3, 6) have the same diameter.
- the ratio of the maximum depth h of the first, second, third, and fourth grooves (11, 41, 42, 71) to the diameters of the first and second elastic strips (3, 6) is 0.25.
- This embodiment provides another damper type photovoltaic backplane, which is different from the first embodiment in that the material of the first, second, and third metal substrates (1, 4, 7) is copper.
- the first, second, and third metal substrates (1, 4, 7) have a thickness of 400 ⁇ m.
- the first elastic strips 3 and the second elastic strips 6 each include a metal core 361. a rubber layer 362 disposed on the surface of the metal core 361, a metal plating layer 363 disposed on the surface of the rubber layer 362, the first elastic strip 3 and the second elastic strip 6 having a diameter of 500 ⁇ m, and the metal core 361
- the material is copper, and the metal plating layer 363 is made of nickel.
- the outer weather resistant resin layer 2 and the inner weather resistant resin layer 9 are made of polyvinylidene fluoride, and the outer weather resistant resin layer 2 and the inner weather resistant resin layer 9 each have a thickness of 90 ⁇ m.
- the spacing between adjacent first elastic strips 3 is 800 micrometers
- the spacing of adjacent second elastic strips 6 is 800 micrometers
- the first, second, third, and fourth grooves (11, 41, 42, 71)
- the maximum depth h is the same
- the diameters of the first and second elastic strips (3, 6) are the same
- the ratio of the maximum depth h to the diameter of the first and second elastic strips (3, 6) is 0.3.
- This embodiment provides another damper type photovoltaic backplane, which is different from the first embodiment in that the first, second, and third metal substrates (1, 4, 7) are made of stainless steel.
- the first, second, and third metal substrates (1, 4, 7) have a thickness of 200 ⁇ m.
- the first elastic strip 3 and the second elastic strip 6 each include a metal core 361, a rubber layer 362 disposed on the surface of the metal core 361, and a metal plating layer 363 disposed on the surface of the rubber layer 362.
- the first elastic strip 3 and the second elastic strip 6 have a diameter of 300 ⁇ m, the metal core 361 is made of iron, and the metal plating layer 363 is made of chromium.
- the outer weather resistant resin layer 2 and the inner weather resistant resin layer 9 are made of an ethylene-tetrafluoroethylene copolymer, and the outer weather resistant resin layer 2 and the inner weather resistant resin layer 9 each have a thickness of 60 ⁇ m.
- the spacing between adjacent first elastic strips 3 is 400 micrometers
- the spacing of adjacent second elastic strips 6 is 400 micrometers
- the first, second, third, and fourth grooves (11, 41, 42, 71)
- the maximum depth h is the same
- the diameters of the first and second elastic strips (3, 6) are the same
- the ratio of the maximum depth h to the diameter of the first and second elastic strips (3, 6) is 0.2.
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- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (7)
- 一种减震型光伏背板,其特征在于:包括:第一金属基板,所述第一金属基板的上表面设置有多个平行排列的第一沟槽,所述第一沟槽的底面呈弧形;外耐候树脂层,所述外耐候树脂层设置于所述第一金属基板的下表面;多个第一弹性条,每个所述第一弹性条的一部分嵌入到相应的所述第一沟槽中;第二金属基板,所述第二金属基板的下表面设置有与每个所述第一沟槽相对应的多个平行排列的第二沟槽,所述第二金属基板的上表面设置有与每个所述第二沟槽相对应的多个平行排列的第三沟槽,所述第二沟槽和所述第三沟槽的底面均呈弧形,所述第一弹性条的另一部分嵌入到所述第二沟槽中,相邻第一弹性条之间具有暴露所述第一金属基板和所述第二金属基板的第一空隙;多个第二弹性条,每个所述第二弹性条的一部分嵌入到相应的所述第三沟槽中;第三金属基板,所述第三金属基板的下表面设置有与每个所述第三沟槽相对应的多个平行排列的第四沟槽,所述第四沟槽的底面呈弧形,所述第二弹性条的另一部分嵌入到所述第四沟槽中,相邻第二弹性条之间具有暴露所述第二金属基板和所述第三金属基板的第二空隙;内耐候树脂层,所述内耐候树脂层设置于所述第三金属基板的上表面。
- 根据权利要求1所述的减震型光伏背板,其特征在于:所述第一、第二、第三金属基板的材质为铝、铜、铁、铝镁合金或不锈钢,所述第一、第二、第三金属基板的厚度为200-400微米。
- 根据权利要求1所述的减震型光伏背板,其特征在于:所述第一弹性条和所述第二弹性条包括金属芯,设置于金属芯表面的橡胶层,设置于橡胶层表面的金属镀层,所述第一弹性条和所述第二弹性条的直径为300-500 微米。
- 根据权利要求3所述的减震型光伏背板,其特征在于:所述金属芯的材质为铝、铜、铁、铝镁合金或不锈钢,所述金属镀层的材质为铜、镍、银或铬。
- 根据权利要求1所述的减震型光伏背板,其特征在于:所述外耐候树脂层和所述内耐候树脂层的材质为聚四氟乙烯、聚三氟氯乙烯、聚偏氟乙烯、聚氟乙烯或乙烯-四氟乙烯共聚物,所述外耐候树脂层和所述内耐候树脂层的厚度均为60-90微米。
- 根据权利要求1所述的减震型光伏背板,其特征在于:相邻第一弹性条的间距为400-800微米,相邻第二弹性条的间距为400-800微米。
- 根据权利要求1所述的减震型光伏背板,其特征在于:所述第一、第二、第三、第四沟槽的最大深度相同,所述第一、第二弹性条的直径相同,所述所述第一、第二、第三、第四沟槽的最大深度与所述第一、第二弹性条直径的比值为0.2-0.3。
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PCT/CN2018/079480 WO2019178724A1 (zh) | 2018-03-19 | 2018-03-19 | 一种减震型光伏背板 |
KR1020187037913A KR102133577B1 (ko) | 2018-03-19 | 2018-03-19 | 일종의 충격흡수형 광발전 백 패널 |
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2018
- 2018-03-19 WO PCT/CN2018/079480 patent/WO2019178724A1/zh active Application Filing
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