WO2019167865A1 - Mems振動子、およびmems発振器 - Google Patents
Mems振動子、およびmems発振器 Download PDFInfo
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- WO2019167865A1 WO2019167865A1 PCT/JP2019/007003 JP2019007003W WO2019167865A1 WO 2019167865 A1 WO2019167865 A1 WO 2019167865A1 JP 2019007003 W JP2019007003 W JP 2019007003W WO 2019167865 A1 WO2019167865 A1 WO 2019167865A1
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Classifications
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- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
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- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
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- B81—MICROSTRUCTURAL TECHNOLOGY
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- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
- B81B7/0016—Protection against shocks or vibrations, e.g. vibration damping
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- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
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- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
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- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/027—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the microelectro-mechanical [MEMS] type
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Definitions
- the present invention relates to a MEMS vibrator and a MEMS oscillator using a graphite film, and further relates to an electronic device such as a MEMS sensor or an actuator using the MEMS oscillator.
- Oscillators are used in all electronic devices that require timing signals, from clocks to televisions and personal computers. Conventionally, oscillators using crystal resonators with a frequency of about 10 to 64 MHz have been used. 2. Description of the Related Art An oscillator (hereinafter referred to as a silicon-MEMS oscillator) using a MEMS (Micro-electromechanical system) vibrator (hereinafter referred to as a silicon-MEMS vibrator) having a silicon resonator is used.
- MEMS Micro-electromechanical system vibrator
- a silicon-MEMS oscillator manufactured by Si-Time has a structure in which a silicon-MEMS vibrator is combined with a programmable integrated circuit (oscillation IC), and the die having the oscillation IC and the silicon-MEMS vibrator The die having is sealed by wire bonding or flip-chip mounting, and packaged in a plastic package or CSP (Chip-scale package).
- the MEMS products include the silicon-MEMS oscillator, a gyro sensor and an actuator having the silicon-MEMS oscillator, and the performance of the silicon-MEMS oscillator is increasing.
- Non-patent Document 1 a semiconductor material such as Si or SiGe is used as a resonator (vibration source) for a mechanically vibrating portion or a spring.
- Si has a problem that its Young's modulus is as low as 130 GPa and it is more likely to break.
- SiGe also has a problem that Young's modulus is about the same as Si (Non-patent Document 1).
- FIG. 1 shows an example of a conventional silicon-MEMS oscillator.
- a silicon-MEMS oscillator 10 includes a silicon substrate 11, an SiO 2 layer 12, an Si layer (SOI layer: Silicon on Insulator layer) 19, an Si epitaxial layer 13, and a Poly-Si layer 18 stacked in this order. Are disposed so as to penetrate through the Si layer (SOI layer) 19, and both ends of the comb-shaped silicon resonator 14 are included in the SiO 2 layer 12.
- the silicon resonator 14 is connected to an oscillation IC including an analog oscillation circuit and the like (not shown) so as to be electrostatically driven.
- a MEMS terminal 16 and a CMOS 17 are arranged on the Poly-Si layer 18.
- the structure of the silicon-MEMS vibrator is complicated, and it requires a lot of processing steps to manufacture it. Therefore, commercialize a MEMS product with a vibrator with a simple both-end fixed beam structure. It is difficult to do.
- an optical scanner using a Si wafer as a resonator as shown in FIG. 2 is also known.
- the optical scanner 20 of the illustrated example has a mirror 26, an X-axis rotating plate 27 having a driving coil, and a Y having a driving coil above a glass 24 including an X-axis detecting coil 23 and a Y-axis detecting coil 22.
- a Si wafer 25 including a rotation plate 28 around the axis is provided, and the permanent magnets 21 are arranged in pairs with the glass 24 interposed therebetween. Since such an optical scanner uses a Si wafer, it is difficult to reduce the thickness.
- Si and other semiconductor materials are easily etched with chemicals and gas agents, and have poor chemical resistance. Therefore, when Si or another semiconductor material is used as a resonator of a MEMS product, particularly when used for a diaphragm of a sensor, its application is limited. In addition, when MEMS products using Si or other semiconductor as a resonator are used in a micro flow channel (micro TAS (micro Total Analysis Systems) or Lab on a Chip), the application is limited.
- micro TAS micro Total Analysis Systems
- Patent Document 1 A diaphragm using a graphite film produced by this technique, electroacoustic conversion And a method for manufacturing a diaphragm have been proposed.
- the graphite film obtained by the method of Patent Document 1 has low mechanical strength for use as a diaphragm, and it is required to impregnate an organic polymer to improve tensile strength. It has been. Moreover, the thickness of the diaphragm obtained in Patent Document 1 is at least 25 ⁇ m or more, which is too thick for use as a MEMS vibrator.
- the present invention provides a MEMS vibrator that is excellent in chemical resistance and mechanical strength and can be easily formed into a thin film, an oscillator using the same, a small actuator, a MEMS sensor, a MEMS flow path, and a microbioreaction circuit. As an issue.
- [4] The MEMS vibrator according to [1] or [2], in which the vibration film and the silicon are joined by a metal layer.
- [5] The MEMS vibrator according to [1] or [2], wherein the vibration film and the silicon are bonded together by a resin layer, and the thickness of the resin layer is 0.01 ⁇ m or more and 0.5 ⁇ m or less.
- [6] The MEMS vibrator according to any one of [1] to [3], wherein the vibration film and the silicon are bonded by mechanical pressure.
- [8] The oscillator according to [7], wherein the oscillation IC is sealed by wire bonding or flip chip mounting.
- a small actuator having the oscillator according to [7] or [8].
- a MEMS sensor that measures the amount of deposits and has the oscillator according to [7] or [8].
- a MEMS flow path having the MEMS vibrator according to any one of [1] to [6].
- a microbioreaction circuit having the MEMS vibrator according to any one of [1] to [6].
- a MEMS vibrator having excellent chemical resistance and mechanical strength, which can be easily thinned, and an oscillator, a small actuator, a MEMS sensor, a MEMS flow path, and a micro bioreaction circuit using the same. Can do.
- high-performance silicon-MLG (Multi Layer Graphene) vibrators or silicon-MLG / MEMS oscillators can be obtained with a simple configuration. Lightweight, compact, chemical-resistant, high-sensitivity MEMS sensors and actuators using this oscillator can be obtained.
- a MEMS device with gas properties is provided.
- FIG. 1 is a diagram showing an example of a conventional silicon-MEMS oscillator.
- FIG. 2 is a diagram showing an example of an optical scanner using a conventional Si wafer as a resonator.
- FIG. 3 is a diagram showing an example of a method of joining the graphite film of the present invention and silicon supporting the film by mechanical pressure.
- FIG. 4 is a view showing an example of a high-precision MEMS vibrator using the graphite film of the present invention.
- FIG. 5 is a view showing an example of an actuator using the graphite film of the present invention.
- FIG. 6 is a diagram showing an example of a pressure sensor using the graphite film of the present invention.
- the MEMS vibrator of the present invention is a graphite-MEMS vibrator having a graphite film as a resonator.
- the MEMS vibrator is a MEMS vibrator having a vibration film having a graphite film and silicon supporting the vibration film.
- the thickness of the film is 50 nm or more and less than 20 ⁇ m, and the Young's modulus in the film surface direction of the graphite film is 700 GPa or more.
- the graphite film of the present invention exhibits high Young's modulus, high density, and high tensile strength because graphite is uniformly formed over the entire film when a polymer film having a predetermined thickness is baked at a high temperature.
- the thickness of the graphite film is determined by the handling of the graphite film and the ease of device fabrication, but it is less than 20 ⁇ m, preferably 18 ⁇ m or less, more preferably 16 ⁇ m or less, and 15 ⁇ m or less. Is most preferred. With a graphite film in such a range, the weight of graphite having a small specific gravity (for example, 2.24) can be reduced. Further, Young's modulus, tensile strength, and electrical conductivity tend to increase as the thickness of the graphite film decreases.
- the thickness of the graphite film is 50 nm or more, preferably 80 nm or more, more preferably 100 nm or more, and most preferably 200 nm or more.
- the thickness is 50 nm or more, preferably 80 nm or more, more preferably 100 nm or more, and most preferably 200 nm or more.
- a graphene ribbon with a single layer to about 10 layers has a thickness of only about 0.34 nm to 3.4 nm and does not have a function as a resonator.
- the thickness can be measured using a known apparatus.
- a contact-type measuring method such as caliper
- an optical measuring method such as laser displacement meter and spectroscopic ellipsometry
- SEM Sccanning Electron Microscope
- TEM TEM
- the elastic modulus (Young's modulus) in the film surface direction of the graphite film is 700 GPa or more.
- the elastic modulus in the film surface direction is preferably 800 GPa or more, and most preferably 900 GPa or more.
- the elastic modulus in the film surface direction is preferably, for example, 1500 GPa or less and 1100 GPa or less.
- the value of Young's modulus is significantly higher than that of commercially available graphite products, and aluminum (Young's modulus: 70.3 GPa), copper (Young's modulus: 129.8 GPa), beryllium (Young's modulus: 287 GPa), mica (Young's modulus: 210 GPa). ) And so on.
- the maximum Young's modulus of the conventional graphite crystal is 1020 GPa.
- a graphite film exceeding the maximum value is also targeted.
- the Young's modulus of the graphite film increases as the quality of the graphite increases, and increases as the heat treatment temperature for graphitization increases.
- the Young's modulus of 700 GPa or more can be achieved, for example, at a heat treatment temperature of about 2800 ° C.
- the graphite film of the present invention may have a Young's modulus in the film thickness direction smaller than that of the graphite diaphragm described in Patent Document 1, but may have a mechanical strength of a predetermined Young's modulus or more in the film thickness direction. preferable.
- the Young's modulus (Ec) in the film thickness direction of the graphite film of the present invention is preferably 40 GPa or more, more preferably 50 GPa or more, for example, 500 GPa or less.
- the graphite single crystal has a Young's modulus (Ea) in the Basal plane (ab plane) direction of 1020 GPa, whereas the Young's modulus (Ec) in the c-axis direction is about 36 GPa. The rate is inferior.
- the Young's modulus in the film thickness direction and film surface direction of the graphite film of the present invention is determined by a conventionally known method.
- a tensile test (test piece: JIS G05567J II-6, measuring device: autograph universal machine AG-IS Type (manufactured by Shimadzu Corporation), static test such as compression test and torsion test, resonance method (test piece: JIS Z2280 measuring device: high temperature Young's modulus measuring device EG-HT / JE made by Nippon Techno Plus), ultrasonic pulse method (test)
- Test piece: JIS Z2280 Measuring device: Burst wave sound velocity measuring device (RAM-5000, manufactured by RITEC), dynamic test such as pendulum method can be used.
- a resonance method in which a forced vibration is mechanically or electrically applied to the test piece to measure a resonance frequency (natural frequency) and a Young's modulus of the graphite film is calculated from the resonance frequency can be preferably used.
- the most common free resonance method is mainly used among the resonance methods.
- the test piece is required to be conductive, but the graphite film has excellent conductivity, and it is preferable to use the resonance method also from such a viewpoint.
- the density of the graphite film is, for example, more than 2.1 g / cm 3 , preferably 2.15 g / cm 3 or more, more preferably 2.17 g / cm 3 or more, and 2.20 g / cm 3. More preferably, it is the above.
- the density of the graphite film is, for example, 2.24 g / cm 3 or less. The higher the density of the graphite film, the less air and voids contained in the film, and the higher the film strength (for example, tensile strength).
- the graphite film of the present invention is also excellent in mechanical strength, and as a tensile strength, for example, a value in the range of about 50 to 100 MPa, preferably about 60 to 100 MPa, more preferably about 70 to 100 MPa can be stably realized. . Therefore, the vibration film can be constituted by the graphite film alone, which means that the vibration film can be formed without impairing the excellent characteristics of the graphite film.
- Tensile strength can be obtained, for example, by the method described in JIS K 7127 or ASTM D882.
- the electrical conductivity of the graphite film is preferably 15000 S / cm or more, more preferably 17000 S / cm or more, and further preferably 19000 S / cm or more.
- the electrical conductivity is preferably 27000 S / cm or less, and more preferably 26000 S / cm or less.
- the electrical conductivity can be calculated from the size and thickness of the sample after measuring the electrical resistance by a known method such as the van DerPauw method or the general four-terminal method.
- the surface roughness Ra of the graphite film is preferably less than 15 ⁇ m, more preferably 10 ⁇ m or less, further preferably 8 ⁇ m or less, more preferably 5 ⁇ m or less, and the lower limit is not particularly limited. It may be 0.1 ⁇ m.
- the surface roughness of the graphite film can be adjusted by applying pressure during graphitization or by performing carbonization and / or graphitization while applying tension from the outside. Applied pressure during graphitization may be, for example, 80kgf / cm 2 ⁇ 130kgf / cm 2.
- the method for producing the graphite film is not particularly limited as long as it satisfies the conditions of mechanical properties and thickness, but a polymer baking method in which the polymer film is heat-treated and graphitized is a preferable method.
- the raw material polymer used in the polymer baking method is an aromatic polymer such as aromatic polyimide, polyamide, polyparaphenylene vinylene, polyoxadiazole, polybenzimidazole, or polybenzoxazole.
- aromatic polyimide is particularly preferable.
- the starting polymer film is heated in an inert gas for carbonization.
- an inert gas nitrogen, argon or a mixed gas of argon and nitrogen is preferably used.
- Carbonization is usually performed at a temperature of about 500 ° C to 1000 ° C.
- the polyimide film is thermally decomposed at around 500 to 600 ° C., and becomes a carbonized film formed from only carbon at around 1000 ° C.
- the graphitization reaction is performed in an inert gas, and is most suitably performed in an argon gas.
- the preferred thickness is 100 nm to 40 ⁇ m, the more preferred thickness is 100 nm to 20 ⁇ m, and the most preferred thickness is 100 nm to 10 ⁇ m. Since the thickness of the aromatic polyimide is almost halved by the above-described carbonization and graphitization described later, a graphite film having a target thickness can be obtained by using the aromatic polyimide having the above thickness.
- the thickness of the graphite film obtained by the conventional polymer firing method is 20 ⁇ m or more.
- the reason why a graphite film having a thickness of less than 20 ⁇ m has not been commercialized by the polymer baking method is that it is difficult to establish a manufacturing process to make the thickness less than 20 ⁇ m.
- wrinkles frequently occur in the carbonization / graphitization process, and when the thickness is less than 20 ⁇ m, the generation of wrinkles becomes significant.
- generation of wrinkles can be prevented by carbonizing / graphitizing an aromatic polyimide film or its carbonized film while applying tensile tension, or graphitizing while applying pressure, and a film having a thickness of less than 20 ⁇ m can be obtained. Can do.
- the graphitization temperature (maximum treatment temperature) required in the present invention is 2800 ° C. or higher. If necessary, it may be processed at a temperature of 2900 ° C. or higher, may be processed at a temperature of 3000 ° C. or higher, and may be 3300 ° C. or lower. When graphitized at 2800 ° C. or higher, when the graphite film has the film thickness of the present invention, a predetermined Young's modulus and tensile strength can be realized.
- the holding time at the maximum processing temperature is, for example, 10 minutes or longer, preferably 30 minutes or longer, and may be 1 hour or longer.
- the upper limit of the maximum treatment temperature holding time is not particularly limited, but it may be usually 5 hours or less, particularly 3 hours or less.
- the atmospheric pressure (gauge pressure) of the high-temperature furnace with an inert gas is, for example, 0.01 MPa or more, preferably 0.02 MPa or more, more preferably 0.05 MPa or more.
- the upper limit of the atmospheric pressure is not particularly limited, but may be, for example, about 2 MPa or less, particularly about 1.8 MPa or less.
- the graphite film obtained by the method described above has a characteristic that the influence of the environmental temperature is small because it is processed at 2800 ° C. or higher, and it is a graphite resonator having both necessary thickness and high mechanical properties. be able to.
- This graphite resonator is useful for producing a graphite-MEMS resonator (particularly a broadband resonator), and has a particularly high Young's modulus, so that a high-frequency resonance characteristic can be obtained.
- the MEMS vibrator has a vibration film having the above-described graphite film and silicon (hereinafter sometimes referred to as a silicon support) that supports the vibration film, and the vibration film and the silicon support are joined to each other. It is preferable. When bonding these, it is necessary to bond the graphite film a-b surface to the silicon support.
- the graphite film ab surface and the silicon surface are preferably bonded by direct bonding without using an adhesive, bonding by a metal layer or a resin layer, or contact bonding by mechanical pressure.
- Direct bonding of the graphite film ab surface without using an adhesive and the silicon surface is the most excellent bonding method utilizing the characteristics of graphite.
- a polished and mirror-finished graphite surface and mirror silicon are bonded at room temperature.
- a strong direct bonding can be realized by activating the graphite surface and the silicon surface by treating each surface in a vacuum.
- a method of activating the surface with an argon beam in vacuum or a method of activating with a FAB gun can be preferably used.
- the joining of the graphite film ab surface and the silicon surface can also be realized by a brazing technique using a metal.
- Brazing is a technique in which a metal is melted by heat and poured into a gap between the joints, and joined by the mutual diffusion action of the brazing and the joining base material.
- the graphite film ab surface and the silicon surface may be joined by a resin layer, and the thickness of the resin layer is preferably 0.01 ⁇ m or more and 0.5 ⁇ m or less, and preferably 0.02 ⁇ m or more. Is more preferably 0.05 ⁇ m or more.
- the resin layer may be an acrylic adhesive, an epoxy adhesive, or the like. Since a general adhesive such as an epoxy adhesive is flexible, it is used with a thickness of 1 ⁇ m or less, and the graphite film It is preferable not to impair excellent mechanical properties.
- the joining of the graphite film ab surface and the silicon surface may be performed by applying mechanical pressure.
- An example of such joining is shown in FIG.
- a graphite film 31 is stretched over a silicon support 32 having a groove 32a cut therein.
- a U-shaped metal jig 33 having four pillars 36 is fitted toward the silicon support 32 with the graphite film 31 interposed therebetween.
- a method of fixing the graphite film 31 between the silicon support 32 and the metal jig 33 will be described.
- the column 36 of the metal jig 33 is made of metal, carbon material, or silicon, and is inserted into a hole provided in the silicon support 32 so that the column 36 can be fixed by pressing from the back side of the metal jig 33. It has become.
- the graphite film 31 is stretched over the silicon support from which the groove 32a is cut, and the graphite film 31 is treated with metal on one of the contact surfaces of the graphite film 31 and the silicon support 32.
- a method of adjusting the tension of the graphite film by pressing with the tool 33 will be described.
- a piezoelectric element 34 is sandwiched between the base 32b on one side of the silicon support 32, and the tension can be adjusted by expanding and contracting the piezoelectric element 34.
- the tension can also be adjusted by installing an electrostatic actuator or the like beside the base 32b on one side.
- the MEMS vibrator thus obtained constitutes an oscillator (MEMS oscillator) together with the oscillation IC.
- the oscillation IC may be sealed by wire bonding or flip chip mounting.
- the MEMS vibrator of the present invention includes information communication fields such as optical scanners and optical microencoders, various sensor fields such as infrared sensors, acceleration sensors, and pressure sensors, microprobes for scanning microscopes, DNA chips, microreactors, and flexible medical devices.
- the present invention can be applied to medical and bio fields such as tubes, MEMS products such as inkjet printer heads, micropumps, and small actuators.
- the MEMS vibrator and the MEMS oscillator are preferably used for a small actuator, preferably used for a MEMS sensor for measuring the amount of deposits, and used for a MEMS flow path and a micro bioreaction circuit. Is preferred.
- ⁇ Film thickness> The thicknesses of the polyimide film and the graphite film of the polymer film had an error of about ⁇ 5% depending on the measurement location of the film (sheet) film. Therefore, the thickness of the average of 10 points of the obtained sheet was taken as the thickness of the sample in the present invention.
- a sample of 2 cm ⁇ 2 cm was used, and a silver paste electrode was attached to each of four corners (ridges), and the measurement was performed by Toyo Technica Co., Ltd., resistivity / DC & AC Hall measurement system, ResiTest 8300. Used.
- the Young's modulus was measured by the free resonance method. This is a method of measuring the resonance frequency (natural frequency) by applying a forced vibration mechanically or electrically to a test piece and calculating the Young's modulus of the graphite film from this resonance frequency.
- the graphite film was cut into a size of 2 ⁇ 16 cm, and both ends were reinforced with a polyimide tape having a thickness of 12.5 ⁇ m.
- the produced measurement sample was set on a vertical electric measurement stand (EMX-1000N manufactured by Imada Co., Ltd.).
- the tensile speed was 5 mm / min, and the tensile strength was measured with a digital force gauge (ZTA-5N manufactured by Imada Co., Ltd.).
- a polyimide film as a raw material was produced by the following method.
- a curing agent composed of 20 g of acetic anhydride and 10 g of isoquinoline is mixed with 100 g of a 18% by mass DMF solution of polyamic acid synthesized from pyromellitic anhydride and 4,4′-diaminodiphenyl ether in a molar ratio of 1/1 and stirred.
- the thickness was adjusted by changing the concentration and rotation speed of the amic acid solution.
- the polyamic acid film was heated at 120 ° C. for 150 seconds, 300 ° C., 400 ° C., and 500 ° C. for 30 seconds, and then the aluminum foil was removed to prepare polyimide films having different thicknesses.
- the graphite film of the present invention As a vibration film, it is preferable to reduce soot generated in the process of carbonization and graphitization.
- Reduction of wrinkles in the carbonization process and graphite process was achieved by a flattening technique using pressurized graphite and a flattening technique using tensile firing.
- Pressurized graphitization is a technique of graphitizing while simultaneously pressing a plurality of samples while preventing adhesion between the samples.
- the surface roughness Ra value when graphitizing without pressurization was 15 ⁇ m, but the Ra value could be reduced to 5 to 3 ⁇ m by graphitizing while applying a pressure of 100 kgf.
- the thickness, electrical conductivity (S / cm), Young's modulus (GPa) in the plane direction, and tensile strength (MPa) of the obtained graphite film are shown below.
- the value of the tensile strength is an average value of 10 samples excluding the values of the two samples showing the minimum value, performed 12 times on the sample cut into a strip shape (width 2 cm, length 16 cm). .
- the reason for performing such a measurement is that the value of the tensile strength originates from a small scratch on the cut surface, and it is considered that such a sample does not represent an accurate film strength.
- Example 1 A first embodiment according to the present invention will be described with reference to FIG. 4A, a graphite film 41 having a thickness of 50 nm or more and less than 20 ⁇ m is stretched over a silicon support 42 having two pedestals 42b, and a metal such as silver solder is placed between the pedestal 42b and the graphite film 41.
- the high-accuracy MEMS vibrator 40 is manufactured by bonding and fixing with a resin, bonding and fixing with a resin such as a resist applied uniformly in the order of submicron, or crimping by caulking or the like.
- the graphite film 41 is vibrated by applying vibration from a piezoelectric film (not shown) such as PZT to the base part 42 b on one side or both sides.
- the vibration of the graphite film 41 can be known from an electrostatic signal between the graphite film 41 and the electrode by disposing an electrode (not shown) on the graphite film 41.
- the resonance frequency of the MEMS vibrator 40 is 6 GHz when the graphite film 41 having a width of 5 ⁇ m and a length of 5 ⁇ m is used, which is higher than the resonance frequency (1.8 GHz) when the silicon resonator having the same size is used. Can generate vibration. Further, as shown in FIG. 4B, the resonance frequency can be freely changed by disposing a weight 43 that can move in the wave propagation direction on the surface of the graphite film 41.
- Example 2 A second embodiment according to the present invention will be described with reference to FIG.
- the piezoelectric film 54 and the graphite film 51 of the present invention are combined in this order on the base portion 52 b of the silicon support 52, thereby producing a highly rigid small actuator 50.
- the laminate 58 including the graphite film is fixed at four points 59, and when a moving electrode or a fixed electrode is disposed, the laminate 58 is not aligned with a predetermined acceleration direction 56. , Move to the opposite side, and the capacitance proceeds in the capacitance traveling direction 57.
- the graphite film of the present invention can also be used as a highly rigid spring structure material.
- Example 3 A third embodiment according to the present invention will be described with reference to FIG. Specifically, in the pressure sensor 60 in the illustrated example, on the lower glass 61, a short silicon 62b, a tall silicon 62c, and a silicon 62a having two flat portions having the same height as each of these two silicons. A diaphragm 64 is provided between the silicon 62b and the silicon 62a in parallel with the lower glass 61, and an upper glass 65 is provided between the silicon 62c and the silicon 62a in parallel with the lower glass 61. An NEG (non-evaporable getter) 63 is disposed above.
- NEG non-evaporable getter
- a detection electrode 66 and a reference electrode 67 are disposed on a lower surface of the upper glass 65 which is a space formed by the upper glass 65 and the diaphragm 64.
- the vibrator having the graphite film of the present invention is used for the diaphragm 64 of the pressure sensor.
- the pressure sensor 60 can detect the gas pressure 68 with an accuracy 10 times or more that of the prior art.
Abstract
Description
[1] グラファイト膜を有する振動膜およびこの振動膜を支持するシリコンを有するMEMS振動子であり、グラファイト膜の厚さが、50nm以上、20μm未満であり、グラファイト膜の膜面方向のヤング率が700GPa以上であることを特徴とするMEMS振動子。
[2] グラファイト膜の引張り強度が50MPa以上である[1]に記載のMEMS振動子。
[3] 前記振動膜と前記シリコンが直接接合している[1]または[2]に記載のMEMS振動子。
[4] 前記振動膜と前記シリコンが金属層によって接合している[1]または[2]に記載のMEMS振動子。
[5] 前記振動膜と前記シリコンが樹脂層によって接合しており、樹脂層の厚さが、0.01μm以上、0.5μm以下である[1]または[2]に記載のMEMS振動子。
[6] 前記振動膜と前記シリコンが機械的圧力によって接合している[1]~[3]のいずれかに記載のMEMS振動子。
[7] [1]~[6]のいずれかに記載のMEMS振動子と発振ICを有する発振器。
[8] 発振ICがワイヤボンディングまたはフリップチップ実装で封止されている[7]に記載の発振器。
[9] [7]または[8]に記載の発振器を有する小型アクチュエータ。
[10] 付着物の量を計量するMEMSセンサーであり、[7]または[8]に記載の発振器を有するMEMSセンサー。
[11] [1]~[6]のいずれかに記載のMEMS振動子を有するMEMS流路。
[12] [1]~[6]のいずれかに記載のMEMS振動子を有する微小バイオ反応回路。
本発明のグラファイト膜は、所定の厚さを有する高分子フィルムを高温で焼成すると、グラファイトが膜全体に渡って均一に形成されることから、高ヤング率、高密度、高引張強度を奏する。
グラファイト膜の厚さは、グラファイト膜の取り扱いやデバイス作製の容易さによって決定されるが、20μm未満であり、18μm以下であることが好ましく、16μm以下であることがより好ましく、15μm以下であることが最も好ましい。かかる範囲のグラファイト膜であれば、小さい比重(例えば2.24)を有するグラファイトの重量を軽くすることが可能となる。また、ヤング率、引張り強度、電気伝導度の値は、グラファイト膜の厚さが薄くなると、高くなる傾向がある。
また前記グラファイト膜の厚さは、50nm以上であり、80nm以上であることが好ましく、100nm以上であることがより好ましく、200nm以上であることが最も好ましい。50nm以上にすることで、共振子として外部に所定の振動を伝えることが可能になる。
なお単層~10層程度のグラフェンリボンでは、厚さが0.34nm~3.4nm程度にしかならず、共振子としての機能を有さない。またCVD法では厚さ50nm以上とした時に、共振子としての必要な機械的特性を有する多層グラフェンを作製する事は困難である。
グラファイト膜のヤング率は、グラファイトが高品質になる程高くなり、グラファイト化の熱処理温度が高いほど高くなる。前記700GPa以上のヤング率は、例えば、約2800℃の熱処理温度で達成できる。
グラファイト膜の製造方法は機械的特性と厚さの条件を満足するものであれば特に制限はないが、高分子膜を熱処理してグラファイト化する高分子焼成法は好ましい方法である。
MEMS振動子は、上述のグラファイト膜を有する振動膜と該振動膜を支持するシリコン(以下、シリコン支持体という場合がある)とを有しており、振動膜とシリコン支持体とは接合されているのが好ましい。これらを接合する場合、グラファイト膜а-b面をシリコン支持体と接合する必要がある。グラファイト膜a-b面とシリコン表面の接合は、接着材を用いない直接接合、金属層又は樹脂層による接合、あるいは機械的な圧力による接触接合によって行うことが好ましい。
樹脂層は、アクリル系接着剤、エポキシ系接着剤等であってもよく、エポキシ接着剤のような一般的な接着剤は柔軟であるために1μm以下の厚さで使用して、グラファイト膜の優れた機械的特性を損なわない様にする事が好ましい。
当該発振ICは、ワイヤボンディングまたはフリップチップ実装で封止されていてもよい。
高分子膜のポリイミド膜、グラファイト膜の厚さは、フィルム(シート)状の膜の測定場所によって±5%程度の誤差があった。そのため得られたシートの10点平均の厚さを本発明における試料の厚さとした。
グラファイト膜の電気伝導度の測定はファン・デル・ポー法によって行った。この方法は薄膜状の試料の電気伝導度を測定するのに最も適した方法である。この測定法の詳細は(第四版)実験化学講座9 電気・磁気(社団法人日本化学会編、丸善株式会社発行(平成3年6月5日発行)(P170)に記載されている。この手法の特徴は、任意の形状の薄膜試料端部の任意の4点に電極をとり測定を行うことが出来ることであり、試料の厚さが均一であれば正確な測定が行える点である。本発明においては2cm×2cmの試料を用い、それぞれの4つの角(稜)に銀ペースト電極を取り付けて行った。測定は(株)東洋テクニカ製、比抵抗/DC&ACホール測定システム、ResiTest 8300を用いて行った。
ヤング率の測定は自由共振法によって行った。これは、試験片に機械的、または電気的に強制振動を加えて共振周波数(固有振動数)を計測し、この共振周波数からグラファイト膜のヤング率を計算する方法である。
引張り強度は、ASTM D882に基づいて測定した。
グラファイト膜をサイズ2×16cmに切り出し、両端を厚み12.5μmのポリイミドテープで補強した。作製した測定用試料を縦型電動計測スタンド((株)イマダ社製EMX-1000N)にセットした。引張速度を5mm/minとし、引張強度はデジタルフォースゲージ((株)イマダ社製ZTA-5N)で測定した。
原料となるポリイミドフィルムを、以下の方法で作製した。ピロメリット酸無水物と4,4’-ジアミノジフェニルエーテルをモル比で1/1の割合で合成したポリアミド酸の18質量%のDMF溶液100gに無水酢酸20gとイソキノリン10gからなる硬化剤を混合、攪拌し、遠心分離による脱泡の後、アルミ箔上に流延塗布し、さらスピンコーターを用いてアルミ箔上に40μm以下の範囲の均一な厚さのポリアミド酸フィルムを作製した。アミド酸溶液の濃度、回転数を変えることで厚さの調整を行なった。ポリアミド酸膜を120℃で150秒間、300℃、400℃、500℃で各30秒間加熱した後アルミ箔を除去し、厚さの異なるポリイミドフィルムを作製した。
厚さの異なるポリイミドフィルムを、電気炉を用いて、窒素ガス中、10℃/分の速度で1000℃まで昇温し、1000℃で1時間保って炭素化した。次に、得られた炭素化膜を、グラファイト化炉の内部にセットし、アルゴン雰囲気で0.10MPa(1.0kg/cm2)の加圧下で、20℃/分の昇温速度で、3200℃まで昇温した。3200℃で30分間保持し、その後40℃/分の速度で降温し、グラファイト膜を作製した。このとき最終的に得られたグラファイト膜の厚さは原料ポリイミド膜のおよそ半分となった。また、得られたグラファイト膜は、膜面方向と並行にグラファイト層が配向した高い配向性を有する膜であった。
(G1)厚さ:14.2μm、電気伝導度:21000S/cm、ヤング率:780GPa、引張り強度:56MPa。
(G2)厚さ:4.6μm、電気伝導度:23900S/cm、ヤング率:870GPa、引張り強度:62MPa。
(G3)厚さ:2.0μm、電気伝導度:24300S/cm、ヤング率:1020GPa、引張り強度:86MPa。
(G4)厚さ:1.2μm、電気伝導度:21500S/cm、ヤング率:970GPa、引張り強度:94MPa。
(G5)厚さ:0.72μm、電気伝導度:22000S/cm、ヤング率:860GPa、引張り強度:96MPa。
(G6)厚さ:0.24μm、電気伝導度:21000S/cm、ヤング率:800GPa、引張り強度:90MPa。
(G7)厚さ:0.06μm、電気伝導度:20200S/cm、ヤング率:720GPa、引張り強度:82MPa。
本発明に係る第1の実施の形態を図4に基づき説明する。図4(a)は、2本の台部42bを有するシリコン支持体42上に、厚み50nm以上20μm未満のグラファイト膜41を掛け渡し、台部42bとグラファイト膜41間を、銀ロウなどの金属で接着固定したり、サブミクロンのオーダの均一塗布されたレジストなどの樹脂で接着固定したり、かしめなどによって圧着して作製した高精度MEMS振動子40を示す。このMEMS振動子40では、片側もしくは両側の台部42bにPZTなどの圧電膜(図示せず)から振動を印加することで、グラファイト膜41を振動させる。グラファイト膜41の振動は、グラファイト膜41上部に電極(図示せず)を配置して、グラファイト膜41とその電極間の静電信号から知ることができる。
本発明に係る第2の実施の形態を図5に基づき説明する。図5(a)の例では、シリコン支持体52の台部52b上に圧電膜54と本発明のグラファイト膜51をこの順で複合させることにより、高剛性の小型アクチェータ50を作製した。また、図5(b)の例では、グラファイト膜を含む積層体58は4点59で固定化され、移動電極や固定電極を配置される場合、積層体58は、所定の加速度方向56に対し、反対側に移動し、静電容量は、静電容量進行方向57に進む。本発明のグラファイト膜は、高剛性のばね構造材としても活用できる。
本発明に係る第3の実施の形態を図6に基づき説明する。具体的には、図示例の圧力センサー60では、下部ガラス61上に、背が低いシリコン62b、背が高いシリコン62c、これら2つのシリコンそれぞれと同じ高さの2つの平面部を有するシリコン62aが設けられ、シリコン62bとシリコン62a間に下部ガラス61と平行にダイヤフラム64が掛け渡され、シリコン62cとシリコン62a間に下部ガラス61と平行に上部ガラス65が掛け渡されており、前記下部ガラス61上にはNEG(非蒸発型ゲッタ)63が配置されている。また上部ガラス65とダイヤフラム64とがなす空間部であって上部ガラス65の下面には、検出電極66と参照電極67とが配置されている。この例では圧力センサーのダイヤフラム64に本発明のグラファイト膜を有する振動子を用いる。この様な構成とする事によって、圧力センサー60は、気体圧力68を従来の10倍以上の精度で検知可能となる。
11:シリコン基板
12:SiO2層
13:Siエピタキシャル層
14:櫛歯型シリコン共振子
15:拡大部分
16:MEMS端子
17:CMOS
18:Poly-Si層
19:Si層(SOI層:Silicon on Insulator層)
20:光スキャナ
21:永久磁石
22:Y軸周り検出コイル
23:X軸周り検出コイル
24:ガラス
25:Siウエハ
26:ミラー
27:X軸周り回転板
28:Y軸周り回転板
31、41、51:グラファイト膜
32:シリコン支持体
33:金属治具
34:圧電素子
40:MEMS振動子
42:シリコン支持体
43:重り
50:アクチュエータ
52:シリコン支持体
52b:台部
54:圧電膜
56:加速度方向
57:静電容量進行方向
60:圧力センサー
61、65:ガラス
62a、62b、62c:シリコン
63:NEG(非蒸発型ゲッタ)
64:ダイヤフラム
66:検出電極
67:参照電極
68:気体圧力
Claims (12)
- グラファイト膜を有する振動膜およびこの振動膜を支持するシリコンを有するMEMS振動子であり、
グラファイト膜の厚さが、50nm以上、20μm未満であり、
グラファイト膜の膜面方向のヤング率が700GPa以上であることを特徴とするMEMS振動子。 - グラファイト膜の引張り強度が50MPa以上である請求項1に記載のMEMS振動子。
- 前記振動膜と前記シリコンが直接接合している請求項1または2に記載のMEMS振動子。
- 前記振動膜と前記シリコンが金属層によって接合している請求項1または2に記載のMEMS振動子。
- 前記振動膜と前記シリコンが樹脂層によって接合しており、
前記樹脂層の厚さが、0.01μm以上、0.5μm以下である請求項1または2に記載のMEMS振動子。 - 前記振動膜と前記シリコンが機械的圧力によって接合している請求項1~3のいずれか1項に記載のMEMS振動子。
- 請求項1~6のいずれか1項に記載のMEMS振動子と発振ICを有する発振器。
- 発振ICがワイヤボンディングまたはフリップチップ実装で封止されている請求項7に記載の発振器。
- 請求項7または8に記載の発振器を有する小型アクチュエータ。
- 付着物の量を計量するMEMSセンサーであり、請求項7または8に記載の発振器を有するMEMSセンサー。
- 請求項1~6のいずれか1項に記載のMEMS振動子を有するMEMS流路。
- 請求項1~6のいずれか1項に記載のMEMS振動子を有する微小バイオ反応回路。
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US11411594B2 (en) * | 2019-04-30 | 2022-08-09 | Gentex Corporation | Vehicle trainable transceiver having a programmable oscillator |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01259698A (ja) | 1988-04-08 | 1989-10-17 | Res Dev Corp Of Japan | 振動板、電気音響変換器および振動板の製造方法 |
JPH07329237A (ja) * | 1994-06-08 | 1995-12-19 | Canon Inc | マイクロ構造体の形成方法 |
JP2003114182A (ja) * | 2001-06-19 | 2003-04-18 | Japan Science & Technology Corp | カンチレバーアレイ、その製造方法及びそれを用いた走査型プローブ顕微鏡、案内・回転機構の摺動装置、センサ、ホモダインレーザ干渉計、試料の光励振機能を有するレーザドップラー干渉計ならびにカンチレバーの励振方法 |
JP2003211396A (ja) * | 2002-01-21 | 2003-07-29 | Ricoh Co Ltd | マイクロマシーン |
JP2005156526A (ja) * | 2003-11-25 | 2005-06-16 | Korea Inst Of Science & Technology | カンチレバーセンサ型分析システムとその製造方法並びにこれを利用した物質感知方法、極微細物質感知方法、生体物質感知方法及び液体の粘度と密度測定方法 |
JP2009060456A (ja) * | 2007-08-31 | 2009-03-19 | Seiko Instruments Inc | 発振子およびそれを用いた発振器 |
JP2011060846A (ja) * | 2009-09-07 | 2011-03-24 | Univ Of Miyazaki | 微細流路の形成方法 |
WO2012086387A1 (ja) * | 2010-12-21 | 2012-06-28 | 日本電気株式会社 | グラフェン基板の製造方法およびグラフェン基板 |
JP2012150350A (ja) * | 2011-01-20 | 2012-08-09 | Ricoh Co Ltd | 機能素子パッケージ、光走査装置、画像形成装置及び機能素子パッケージのパッケージング方法 |
JP2012244349A (ja) * | 2011-05-18 | 2012-12-10 | Nippon Telegr & Teleph Corp <Ntt> | 微小機械振動子とその製造方法 |
JP2014053763A (ja) * | 2012-09-07 | 2014-03-20 | Seiko Epson Corp | 電子装置の製造方法および電子装置 |
JP2017103369A (ja) * | 2015-12-02 | 2017-06-08 | 凸版印刷株式会社 | インプリント方法及びインプリントモールド |
JP2018036682A (ja) | 2016-08-29 | 2018-03-08 | 日本電産サンキョー株式会社 | カード処理装置 |
JP2018125696A (ja) * | 2017-01-31 | 2018-08-09 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびマルチプレクサ |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5178804A (en) * | 1990-07-27 | 1993-01-12 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing acoustic diaphragm |
US5658698A (en) | 1994-01-31 | 1997-08-19 | Canon Kabushiki Kaisha | Microstructure, process for manufacturing thereof and devices incorporating the same |
US7457021B2 (en) * | 2004-06-24 | 2008-11-25 | Cornell Research Foundation, Inc. | Fiber based MEMS |
US20130062104A1 (en) * | 2011-09-08 | 2013-03-14 | Cornell University - Cornell Center For Technology Enterprise & Commercialization (Cctec) | Resonant material layer apparatus, method and applications |
KR101707763B1 (ko) | 2013-05-24 | 2017-02-16 | 미쯔이가가꾸가부시끼가이샤 | 펠리클 및 이것을 포함하는 euv 노광 장치 |
US10823630B1 (en) * | 2016-11-11 | 2020-11-03 | Iowa State University Research Foundation, Inc. | High sensitivity MEMS pressure sensor |
-
2019
- 2019-02-25 WO PCT/JP2019/007003 patent/WO2019167865A1/ja active Application Filing
- 2019-02-25 JP JP2020503483A patent/JP7340514B2/ja active Active
- 2019-02-25 EP EP19760832.6A patent/EP3761505A4/en active Pending
-
2020
- 2020-08-31 US US17/007,891 patent/US11655145B2/en active Active
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01259698A (ja) | 1988-04-08 | 1989-10-17 | Res Dev Corp Of Japan | 振動板、電気音響変換器および振動板の製造方法 |
JPH07329237A (ja) * | 1994-06-08 | 1995-12-19 | Canon Inc | マイクロ構造体の形成方法 |
JP2003114182A (ja) * | 2001-06-19 | 2003-04-18 | Japan Science & Technology Corp | カンチレバーアレイ、その製造方法及びそれを用いた走査型プローブ顕微鏡、案内・回転機構の摺動装置、センサ、ホモダインレーザ干渉計、試料の光励振機能を有するレーザドップラー干渉計ならびにカンチレバーの励振方法 |
JP2003211396A (ja) * | 2002-01-21 | 2003-07-29 | Ricoh Co Ltd | マイクロマシーン |
JP2005156526A (ja) * | 2003-11-25 | 2005-06-16 | Korea Inst Of Science & Technology | カンチレバーセンサ型分析システムとその製造方法並びにこれを利用した物質感知方法、極微細物質感知方法、生体物質感知方法及び液体の粘度と密度測定方法 |
JP2009060456A (ja) * | 2007-08-31 | 2009-03-19 | Seiko Instruments Inc | 発振子およびそれを用いた発振器 |
JP2011060846A (ja) * | 2009-09-07 | 2011-03-24 | Univ Of Miyazaki | 微細流路の形成方法 |
WO2012086387A1 (ja) * | 2010-12-21 | 2012-06-28 | 日本電気株式会社 | グラフェン基板の製造方法およびグラフェン基板 |
JP2012150350A (ja) * | 2011-01-20 | 2012-08-09 | Ricoh Co Ltd | 機能素子パッケージ、光走査装置、画像形成装置及び機能素子パッケージのパッケージング方法 |
JP2012244349A (ja) * | 2011-05-18 | 2012-12-10 | Nippon Telegr & Teleph Corp <Ntt> | 微小機械振動子とその製造方法 |
JP2014053763A (ja) * | 2012-09-07 | 2014-03-20 | Seiko Epson Corp | 電子装置の製造方法および電子装置 |
JP2017103369A (ja) * | 2015-12-02 | 2017-06-08 | 凸版印刷株式会社 | インプリント方法及びインプリントモールド |
JP2018036682A (ja) | 2016-08-29 | 2018-03-08 | 日本電産サンキョー株式会社 | カード処理装置 |
JP2018125696A (ja) * | 2017-01-31 | 2018-08-09 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびマルチプレクサ |
Non-Patent Citations (2)
Title |
---|
"Experimental chemistry 9 (fourth series) electricity and magnetism", 5 June 1991, MARUZEN CO., LTD., pages: 170 |
SHUJI TANAKAMASAYOSHI ESASHI: "Review Paper MEMS technology", SCIENCE AND INDUSTRY, vol. 85, no. 2, 2011, pages 49 - 56 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021075248A1 (ja) * | 2019-10-17 | 2021-04-22 | 株式会社バルカー | 低耐熱性センサー |
JP7319166B2 (ja) | 2019-10-17 | 2023-08-01 | 株式会社バルカー | 低耐熱性センサー |
US11835539B2 (en) | 2019-10-17 | 2023-12-05 | Valqua, Ltd. | Low heat-resistant sensor |
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JPWO2019167865A1 (ja) | 2021-02-12 |
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