WO2019159976A1 - Élément de conversion photoélectrique et dispositif de conversion photoélectrique - Google Patents

Élément de conversion photoélectrique et dispositif de conversion photoélectrique Download PDF

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Publication number
WO2019159976A1
WO2019159976A1 PCT/JP2019/005128 JP2019005128W WO2019159976A1 WO 2019159976 A1 WO2019159976 A1 WO 2019159976A1 JP 2019005128 W JP2019005128 W JP 2019005128W WO 2019159976 A1 WO2019159976 A1 WO 2019159976A1
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photoelectric conversion
conversion element
semiconductor layer
layer
incident light
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PCT/JP2019/005128
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English (en)
Japanese (ja)
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訓太 吉河
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株式会社カネカ
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Priority to JP2020500525A priority Critical patent/JP7281443B2/ja
Publication of WO2019159976A1 publication Critical patent/WO2019159976A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors

Definitions

  • the present invention relates to a photoelectric conversion element and a photoelectric conversion device used in the field of light detection and the like.
  • Patent Document 1 discloses a photoelectric conversion element (semiconductor light receiving element) that detects the intensity (illuminance) of incident light.
  • a photoelectric conversion element for example, an element using a crystalline silicon substrate is known.
  • the dark current is relatively small and the S / N ratio is relatively high even when the intensity of incident light is low, and the sensitivity is high (stable response regardless of illuminance). ).
  • An object of the present invention is to provide a photoelectric conversion element and a photoelectric conversion device for detecting the spot size of incident light.
  • the photoelectric conversion element according to the present invention includes a photoelectric conversion substrate, a first semiconductor layer disposed on one main surface side of the photoelectric conversion substrate, and a second semiconductor layer disposed on the other main surface side.
  • the conductivity type of the photoelectric conversion substrate and the conductivity types of the first semiconductor layer and the second semiconductor layer are opposite to each other, and the carriers generated in the photoelectric conversion substrate by the received light Of these minority carriers, the amount of recovered carrier is different between the one main surface side and the other main surface side.
  • the photoelectric conversion device is disposed on the downstream side of the incident light, the first photoelectric conversion element disposed on the upstream side of the incident light, the light emitting unit that emits the light that is the basis of the incident light, and the above
  • the obtained photoelectric conversion element is included as a second photoelectric conversion element.
  • a photoelectric conversion element and a photoelectric conversion device for detecting the spot size of incident light are provided.
  • FIG. 2 is a sectional view taken along line II-II in the first photoelectric conversion element of FIG. 1.
  • FIG. 3 is a partial cross-sectional view taken along line III-III in the second photoelectric conversion element of FIG. 1. It is the graph which showed the IV curve at the time of irradiating the light of two types (wide and narrow size) spot size to a general photoelectric conversion element. It is the graph which showed the IV curve by the photoelectric conversion element of a double-sided pn structure, and the photoelectric conversion element of a single-sided pn structure.
  • the 2nd photoelectric conversion element concerning the 1st modification of a 1st embodiment when an irradiation field is narrow, it is a mimetic diagram showing signs of recovery of a carrier generated with a semiconductor substrate. It is sectional drawing of the 2nd photoelectric conversion element which concerns on the 2nd modification of 1st Embodiment. It is sectional drawing of the 2nd photoelectric conversion element which concerns on the 3rd modification of 1st Embodiment. It is a block diagram which shows the three-dimensional sensor which concerns on 2nd Embodiment.
  • FIG. 1 is a perspective view illustrating a photoelectric conversion device.
  • the photoelectric conversion device 1 detects not only the intensity of incident light but also the spot size and incident direction of incident light.
  • the photoelectric conversion device 1 includes a first photoelectric conversion element 10 disposed on the upstream side in the light traveling direction, a second photoelectric conversion element 20 disposed on the downstream side in the light traveling direction, a storage unit 30, and an arithmetic operation. Part 40.
  • the XY plane is a plane parallel to the light receiving surfaces of the first photoelectric conversion element 10 and the second photoelectric conversion element 20, and the Z direction is a direction orthogonal to the XY plane.
  • the intersection of two one-dot chain lines indicates the center of the XY plane, one one-dot chain line is parallel to the X direction, and the other one-dot chain line is parallel to the Y direction.
  • the intersection of two dotted lines indicates the center of the spot size of incident light on the XY plane, one dotted line being parallel to the X direction and the other dotted line being parallel to the Y direction.
  • the first photoelectric conversion element 10 generates a current corresponding to the intensity (total amount) of incident light incident on the light receiving surface. And the 1st photoelectric conversion element 10 arrange
  • the second photoelectric conversion element 20 has a conductivity type of a semiconductor substrate in which minority carriers are formed on both main surfaces of the semiconductor substrate among carriers (electrons or holes) generated according to incident light incident on the semiconductor substrate. Are collected for each semiconductor layer of the opposite conductivity type, and a current is generated by the difference in the amount collected.
  • the second photoelectric conversion element 20 has a relatively high interface resistance (interface resistance) between the semiconductor substrate and each semiconductor layer, or a relatively short lifetime of minority carriers at the interface. As a result, the value of the short-circuit current Isc is decreased. As a result, the short-circuit current Isc changes according to the size of the spot size of incident light on the second photoelectric conversion element 20 (details will be described later). That is, the second photoelectric conversion element 20 generates a current corresponding to the density of incident light, in other words, a current corresponding to the spot size of incident light.
  • the 2nd photoelectric conversion element 20 arrange
  • the output is distributed to the two extraction electrode layers 223 (and the extraction electrode layer 233 on the back side described later).
  • the storage unit 30 includes an output current (total amount) of the first photoelectric conversion element 10 (that is, a current corresponding to the intensity (total amount) of incident light) and an output current (total amount) of the second photoelectric conversion element 20 (that is, A table in which the current corresponding to the spot size of the incident light) and the spot size of the incident light on the light receiving surface of the second photoelectric conversion element 20 are associated with each other is stored in advance.
  • the storage unit 30 is a rewritable memory such as an EEPROM.
  • the calculation unit 40 calculates and detects the intensity (total amount) of incident light according to the total amount of current output from the four extraction electrode layers 123 (133) of the first photoelectric conversion element 10.
  • the calculation unit 40 determines the XY position of the incident light on the light receiving surface of the first photoelectric conversion element 10 based on the ratio of the current output from each of the four extraction electrode layers 123 (133) of the first photoelectric conversion element 10. (Coordinate) is calculated and detected. Similarly, the calculation unit 40 determines the incident light XY on the light receiving surface of the second photoelectric conversion element 20 based on the ratio of the current output from each of the four extraction electrode layers 223 (233) of the second photoelectric conversion element 20. The position (coordinates) is calculated and detected.
  • the calculation unit 40 calculates the incident light from the XY position (coordinates) of the incident light on the light receiving surface of the first photoelectric conversion element 10 and the XY position (coordinates) of the incident light on the light receiving surface of the second photoelectric conversion element 20.
  • the incident direction is calculated and detected.
  • the calculation unit 40 refers to the table stored in the storage unit 30, and compares the total amount of current output from the four extraction electrode layers 123 (133) of the first photoelectric conversion element 10 (that is, the intensity of incident light). Current corresponding to (total amount)) and the total amount of current output from the four extraction electrode layers 223 (233) of the second photoelectric conversion element 20 (that is, current corresponding to the spot size of incident light). The spot size of incident light on the light receiving surface of the second photoelectric conversion element 20 is obtained and detected.
  • the arithmetic unit 40 is an arithmetic processor such as a DSP (Digital Signal Processor) or FPGA (Field-Programmable Gate Array).
  • Various functions of the calculation unit 40 are realized by executing predetermined software (for example, a program or an application) stored in the storage unit 30, for example.
  • Various functions of the arithmetic unit 40 may be realized by cooperation of hardware and software, or may be realized only by hardware (electronic circuit).
  • the photoelectric conversion device 1 as described above includes a light emitting unit that emits light that is a base of incident light to the first photoelectric conversion element 10 and the second photoelectric conversion element 20 as necessary. It doesn't matter.
  • FIG. 2 is a cross-sectional view taken along line II-II in the first photoelectric conversion element 10 of FIG.
  • the first photoelectric conversion element 10 includes an n-type semiconductor substrate 110 having two main surfaces 110S (110SU and 110SB) and one of the main surfaces 110S of the semiconductor substrate 110 on the light receiving side.
  • a passivation layer 120, a p-type semiconductor layer 121, a transparent electrode layer 122, and a lead electrode layer 123 are sequentially stacked on the light-receiving surface side that is the main surface 110SU.
  • the first photoelectric conversion element 10 is a passivation layer that is sequentially stacked on a part of the back side that is the other main surface 110SB on the opposite side of the main surface 110SU on the light receiving side of the main surface 110S of the semiconductor substrate 110. 130, an n-type semiconductor layer 131, a transparent electrode layer 132, and an extraction electrode layer 133.
  • conductivity types are in conflict such as p-type and n-type, one conductivity type may be referred to as “first conductivity type” and the other conductivity type may be referred to as “second conductivity type”.
  • the semiconductor substrate 110 is formed of a crystalline silicon material such as single crystal silicon or polycrystalline silicon.
  • the semiconductor substrate 110 is an n-type semiconductor substrate in which, for example, a crystalline silicon material is doped with an n-type dopant.
  • An example of the n-type dopant is phosphorus (P).
  • the S / N ratio is relatively high even when the dark current is relatively small and the intensity of incident light is low, and high sensitivity (regardless of illuminance). Stable response).
  • the passivation layer 120 is formed on the light receiving surface side of the semiconductor substrate 110, and the passivation layer 130 is formed on the back surface side of the semiconductor substrate 110.
  • the passivation layers 120 and 130 are made of, for example, an intrinsic (i-type) amorphous silicon material.
  • the passivation layers 120 and 130 suppress the recombination of carriers generated in the semiconductor substrate 210 and increase the carrier recovery efficiency (hereinafter, this capability may be referred to as passivation capability).
  • the p-type semiconductor layer 121 is formed on the passivation layer 120.
  • the p-type semiconductor layer 121 is made of, for example, an amorphous silicon material.
  • the p-type semiconductor layer 121 is a p-type semiconductor layer in which an amorphous silicon material is doped with a p-type dopant, for example.
  • An example of the p-type dopant is boron (B).
  • the n-type semiconductor layer 131 is formed on the passivation layer 130.
  • the n-type semiconductor layer 131 is made of, for example, an amorphous silicon material.
  • the n-type semiconductor layer 131 is an n-type semiconductor layer in which, for example, an amorphous silicon material is doped with an n-type dopant (for example, phosphorus (P) described above).
  • the passivation layers 120 and 130, the p-type semiconductor layer 121, and the n-type semiconductor layer 131 described above are formed by using, for example, a CVD (Chemical Vapor Deposition) method.
  • the transparent electrode layer 122 is formed on the p-type semiconductor layer 121, and the transparent electrode layer 132 is formed on the n-type semiconductor layer 131. That is, the transparent electrode layer 122 is an electrode layer corresponding to the p-type semiconductor layer 121 and is disposed so as to sandwich the p-type semiconductor layer 121 together with the semiconductor substrate 110, and the transparent electrode layer 132 corresponds to the n-type semiconductor layer 131. The electrode layer is disposed so as to sandwich the n-type semiconductor layer 131 together with the semiconductor substrate 110.
  • the transparent electrode layers 122 and 132 are made of a transparent conductive material.
  • the transparent conductive material include ITO (Indium Tin Oxide: a composite oxide of indium oxide and tin oxide).
  • the transparent electrode layers 122 and 132 are formed by using, for example, a sputtering method.
  • extraction electrode layers 123 are independently formed on each of the four sides on the transparent electrode layer 122, and four extraction electrode layers 133 are independently formed on each of the four sides on the transparent electrode layer 132. Is done.
  • the extraction electrode layers 123 and 133 are formed of a conductive paste material containing a metal powder such as silver.
  • the manufacturing method of extraction electrode layer 123,133 is not specifically limited, For example, it forms by the printing method.
  • FIG. 3 is a partial cross-sectional view taken along line III-III in the second photoelectric conversion element 20 of FIG.
  • the second photoelectric conversion element 20 includes an n-type semiconductor substrate 210 having two main surfaces 210S (210SU, 210SB) and one of the main surfaces 210S of the semiconductor substrate 210 on the light receiving side.
  • a passivation layer 220, a p-type semiconductor layer 221, a transparent electrode layer 222, and a lead electrode layer 223 are sequentially stacked on the light-receiving surface side that is the main surface 210 SU.
  • the second photoelectric conversion element 20 includes a passivation layer 230, p stacked in order on the back surface side which is the other main surface 210SB opposite to the main surface 210SU on the light receiving side of the main surface 210S of the semiconductor substrate 210.
  • Type semiconductor layer 231, transparent electrode layer 232, and extraction electrode layer 233 are examples of the second photoelectric conversion element 20.
  • the semiconductor substrate [photoelectric conversion substrate] 210 is formed of a crystalline silicon material such as single crystal silicon or polycrystalline silicon, similarly to the semiconductor substrate 110 of the first photoelectric conversion element 10 described above.
  • the semiconductor substrate 210 is an n-type semiconductor substrate in which, for example, a crystalline silicon material is doped with an n-type dopant (for example, phosphorus (P) described above). Note that as a material of the semiconductor substrate 210, p-type crystalline silicon using a p-type dopant may be used.
  • the passivation layer [first passivation layer / second passivation layer] 220 is formed on the light-receiving surface side of the semiconductor substrate 210, and the passivation layer [second passivation layer / first passivation layer] 230 is the back surface of the semiconductor substrate 210. Formed on the side.
  • the passivation layers 220 and 230 are formed of, for example, an intrinsic (i-type) amorphous silicon material, similarly to the passivation layers 120 and 130 of the first photoelectric conversion element 10 described above. These passivation layers 220 and 230 suppress the recombination of carriers generated in the semiconductor substrate 210 and increase the carrier recovery efficiency.
  • the p-type semiconductor layer [first semiconductor layer / second semiconductor layer] 221 is formed on the passivation layer 220, and the p-type semiconductor layer [second semiconductor layer / first semiconductor layer] 231 is formed on the passivation layer 230.
  • the p-type semiconductor layers 221 and 231 are formed of, for example, an amorphous silicon material, similarly to the p-type semiconductor layer 121 of the first photoelectric conversion element 10 described above.
  • the p-type semiconductor layers 221 and 231 are p-type semiconductor layers in which, for example, an amorphous silicon material is doped with a p-type dopant (for example, boron (B) described above). Further, the above-described passivation layers 220 and 230, the p-type semiconductor layer 221, and the p-type semiconductor layer 231 are formed by using, for example, a CVD method.
  • a p-type dopant for example, boron (B) described above.
  • the p-type semiconductor layers 221 and 231 on both main surfaces of the semiconductor substrate 210 do not need to be p-type semiconductor layers intentionally doped with boron, and the diode characteristics described later are ensured with respect to the semiconductor substrate 210. If it is, an i-type amorphous silicon layer may be used.
  • the transparent electrode layer [first electrode layer / second electrode layer] 222 is formed on the p-type semiconductor layer 221, and the transparent electrode layer [second electrode layer / first electrode layer] 232 is formed on the p-type semiconductor layer 231.
  • the transparent electrode layer 222 is an electrode layer corresponding to the p-type semiconductor layer 221 and is disposed so as to sandwich the p-type semiconductor layer 221 together with the semiconductor substrate 210, and the transparent electrode layer 232 corresponds to the p-type semiconductor layer 231.
  • the electrode layer is arranged so as to sandwich the p-type semiconductor layer 231 together with the semiconductor substrate 210.
  • the transparent electrode layers 222 and 232 are formed of a transparent conductive material in the same manner as the transparent electrode layers 122 and 132 of the first photoelectric conversion element 10 described above. Further, the transparent electrode layers 222 and 232 are formed by using, for example, a sputtering method.
  • extraction electrode layers 223 are independently formed on each of the four sides on the transparent electrode layer 222, and four extraction electrode layers 233 are independently formed on each of the four sides on the transparent electrode layer 232. Is done.
  • the electrode layers 223 and 233 are formed of a conductive paste material containing a metal powder such as silver, like the electrode layers 123 and 133 of the first photoelectric conversion element 10 described above.
  • the manufacturing method of extraction electrode layer 223,233 is not specifically limited, For example, it forms by the printing method.
  • the conductivity type (n-type) of the semiconductor substrate 210 and the conductivity types of the p-type semiconductor layer 221 and the p-type semiconductor layer 231 are opposite to each other (p-type).
  • the carrier recovery amount for minority carriers among the carriers generated in the semiconductor substrate 210 by the received light is different between the one main surface side and the other main surface side.
  • a double-sided pn structure having a pn junction on each of the main surfaces 210SU and 10SB of the semiconductor substrate 210, which is an example of a structure that makes a difference in the carrier recovery amount, will be described.
  • FIG. 4 is a graph showing an IV curve when a photoelectric conversion element is irradiated with light of two types of spot sizes (wide and narrow sizes).
  • a solid line indicates light with a wide spot size
  • a broken line indicates light with a narrow spot size. The case where is irradiated is shown.
  • the light intensity A is the highest and the light intensity C is the lowest.
  • the series resistance Rs which can be referred to as the electrical resistance in the carrier transport path, becomes very high.
  • the approximate value of the series resistance Rs is obtained by the reciprocal of the slope near the open circuit voltage Voc.
  • a normal solar cell or the like see the alternate long and short dash line in the first quadrant of the graph. Retract to the second quadrant without causing a bending point such as the maximum output point that occurs. Such behavior is due to a voltage drop due to the series resistance Rs.
  • the current (I) is affected.
  • the short circuit current Isc current value at the intersection of the current voltage line and the current axis in the graph) is affected by the voltage drop ⁇ V.
  • the short-circuit current Isc also changes with the variation of the series resistance Rs due to the spot size described later. Further, even when the bending point is in the vicinity of 0 V as in the case of the light intensity B, the short-circuit current Isc changes due to the variation of the series resistance Rs caused by the spot size.
  • the light intensity C is low, since the light intensity is low, only a relatively low current is generated, and the voltage drop is correspondingly small, so that the position of the bending point is sufficiently high from 0V. If it is on the side, the movement of the bending point due to the variation of the series resistance Rs due to the spot size does not occur in the second quadrant but occurs in the first quadrant. Then, the short-circuit current Isc is not affected by the voltage drop and does not fluctuate.
  • the photoelectric conversion element used for such an application must have a sensitivity that causes a difference in the short-circuit current Isc corresponding to the spot size at 0 V (current-voltage line when the spot size is wide). And the intersection of the current axis and the intersection of the current voltage line and the current axis when the spot size is narrow).
  • the pn junction is disposed on both sides of the semiconductor substrate so as to face each other.
  • a double-sided pn structure as shown in FIG. 5, only one occurs in a single-sided pn structure (a structure in which a semiconductor layer different from the conductivity type of the semiconductor substrate is disposed only on one surface of the semiconductor substrate).
  • a saturation current region due to diode characteristics occurs in the second quadrant and the fourth quadrant.
  • the saturation current value A in the second quadrant and the saturation current value B in the fourth quadrant in the double-sided pn structure is the absolute value of the saturation current value C in the second quadrant in the single-sided pn structure.
  • the saturation current value A of the same polarity (+) is lower than the saturation current value C of the single-sided pn structure.
  • the open circuit voltage Voc corresponds to the difference between the Fermi level of the p-type semiconductor layer on the one main surface side and the Fermi level of the p-type semiconductor layer on the other main surface side. Therefore, the open circuit voltage Voc in the double-sided pn structure can be designed to be extremely smaller than the open circuit voltage Voc of the single-sided pn structure that is about half of the band gap.
  • the Fermi level in the p-type semiconductor layer on the one main surface side coincides with the Fermi level in the p-type semiconductor layer on the other main surface side, and the p-type semiconductor on the one main surface side.
  • the short circuit current Isc is determined by the balance relationship between the carrier inflow amount (recovery amount) to the layer and the carrier inflow amount (recovery amount) to the p-type semiconductor layer on the other main surface side. Therefore, the short-circuit current Isc in the double-sided pn structure is extremely smaller than the short-circuit current Isc in the single-sided pn structure. If the electrical characteristics (including the number of carriers flowing in) of the pn junctions on both sides exactly match, the current voltage line is point-symmetric about the origin, the open circuit voltage is 0V, and the short-circuit current is 0A.
  • the voltage difference between the two bending points and the slope of the current-voltage line formed between the two bending points are mainly affected by the carrier lifetime and the series resistance Rs.
  • the shorter the carrier lifetime the greater the voltage drop and current loss due to recombination, so that both inflection points move away from the current axis. Therefore, the slope of the current voltage line between the bending points becomes small (that is, approaches the parallel to the voltage axis), and the radius of curvature of the current voltage line near each bending point also increases.
  • the series resistance Rs is high, a voltage drop caused by the series resistance Rs occurs, so that both bending points move away from the current axis. For this reason, the slope of the current-voltage line between the bending points becomes small.
  • a saturation current region is generated in a high voltage region (positive voltage region in absolute value) at positive and negative voltages, and the inflection point is corresponding to the curve of the IV curve.
  • a total of two locations are generated, one in the second quadrant and one in the fourth quadrant. Therefore, the current-voltage line between the bending points intersects the current axis while having an inclination near the current axis.
  • the sensor characteristics are, for example, that the conductivity type (n-type) of the semiconductor substrate 210 is opposite to the conductivity type of the p-type semiconductor layer 221 and the p-type semiconductor layer 231 (p-type).
  • the carrier recovery amount for minority carriers out of the carriers generated in the semiconductor substrate 210 by the received light is generated in the second photoelectric conversion element 20 that is different between the one main surface side and the other main surface side. .
  • the two main surface sides of the semiconductor substrate 210 and the amount of recovered carrier are not particularly limited, and the amount of recovered carrier is large (or small) on the back surface side even on the light receiving surface side. It doesn't matter.
  • the concentration (doping concentration) of the conductive impurity in the p-type semiconductor layer 221 and the concentration of the conductive impurity in the p-type semiconductor layer 231 are different from each other. That's fine.
  • the film thickness of the p-type semiconductor layer 221 and the film thickness of the p-type semiconductor layer 231 may be different from each other.
  • the concentration of conductive impurities in the p-type semiconductor layer 221 and the p-type semiconductor layer 231 may be different from each other, and the film thickness may be different. That is, at least one of the concentration and the film thickness of the conductive impurities in the p-type semiconductor layer 221 and the p-type semiconductor layer 231 may be different in both the p-type semiconductor layers 221 and 231.
  • the semiconductor layer with a high doping concentration has a higher charge density than the semiconductor layer with a low doping concentration, and collects more carriers at the pn junction in order to attract carriers more strongly.
  • a thick semiconductor layer has a larger amount of carriers in a pn junction in order to attract carriers more strongly because it exceeds the charge amount even when the charge density is the same as that of a thin semiconductor layer. to recover.
  • the thickness of the passivation layer 220 disposed between the p-type semiconductor layer 221 and the semiconductor substrate 210, the p-type semiconductor layer 231 and the semiconductor may be different from each other.
  • the change in the series resistance Rs that changes according to the spot size may be small depending on the characteristics of the semiconductor substrate used for the photoelectric conversion element. This is because when the interface path is high and the carrier path that moves in the lateral direction (in-plane direction of the substrate) is formed in the semiconductor substrate, the carrier transport path is the same regardless of the light spot size. This is partly because That is, in the photoelectric conversion element, if the resistance in the semiconductor substrate is low, even if the interface resistance is high, the difference in series resistance Rs corresponding to the spot size is small.
  • the short-circuit current Isc is changed using carrier recombination. That is, when the carrier moves laterally in the semiconductor substrate because the interface resistance is high and the resistance in the semiconductor substrate is low, the carrier recombination velocity is designed to be high so that the carrier is Take advantage of combining. As a result, the amount of current (carrier recovery amount) that can be recovered according to the length of the carrier path decreases. As a result, in the case of a wide spot size with small carrier lateral movement, the short-circuit current Isc increases, and in the case of a narrow light spot size with large carrier lateral movement, the short-circuit current Isc decreases due to carrier recombination.
  • the passivation layer is designed to be extremely thick (20 nm or more), the interface resistance is increased, and carrier congestion occurs near the interface, thereby generating Coulomb repulsion. Then, a decrease in carrier recovery efficiency due to this Coulomb repulsion, and a decrease in the amount of recovered carrier is utilized.
  • the thickness of the passivation layers 220 and 230 is designed in the range of 20 nm to 100 nm. For example, it is preferable that a difference is provided between the thicknesses of the passivation layer 220 and the passivation layer 230 in the range of 20 nm to 100 nm.
  • the hydrogen content in the passivation layer is adjusted, so that the passivation layer for each passivation layer is adjusted. It is also possible to make a difference in the ability of the civilization and make a difference in the amount of recovered carrier.
  • the hydrogen content of the passivation layer 230 on the back surface side of the second photoelectric conversion element 20 is designed to be smaller than the hydrogen content of the light-receiving side passivation layer 220, so that the passivation layer 230 is protected from passivation. It has a lower passivation ability than layer 220.
  • the recombination speed of carriers on the other main surface 210SB of the main surfaces 210S of the semiconductor substrate 210 is increased, thereby receiving light with a narrow spot size that requires time for carrier recovery.
  • the short circuit current Isc decreases. Therefore, in the case of a wide spot size with little carrier lateral movement, the short-circuit current Isc increases, and in the case of a narrow light spot size with large lateral movement of carriers, the short-circuit current Isc decreases due to carrier recombination.
  • the film thickness may be different from each other and the hydrogen content may be different from each other. That is, at least one of the film thickness and the hydrogen content in the passivation layer 220 and the passivation layer 230 may be different in both the passivation layers 220 and 230.
  • the second photoelectric conversion element 20 may be designed by adding the above structure. This is because even in such a design, the carrier recovery amount for minority carriers among the carriers generated in the semiconductor substrate 210 by the received light is different between the one main surface side and the other main surface side.
  • the first photoelectric conversion element 10 generates a current corresponding to the intensity (total amount) of incident light incident on the light receiving surface.
  • the first photoelectric conversion element 10 distributes the generated current to four pairs of electrode layers 123 and 133 arranged on four sides according to the XY position (coordinates) of the center of incident light on the light receiving surface (XY plane). And output.
  • the second photoelectric conversion element 20 has a difference in minority carrier amount passing through the p-type semiconductor layers 221 and 231 on both sides of the carriers (electrons or holes) generated according to the incident light incident on the semiconductor substrate 210. A current corresponding to is generated.
  • the 2nd photoelectric conversion element 20 produces
  • the 2nd photoelectric conversion element 20 makes the produced
  • the calculation unit 40 calculates and detects the intensity (total amount) of incident light in accordance with the total amount of current output from the four pairs of electrode layers 123 and 133 of the first photoelectric conversion element 10.
  • the calculation unit 40 determines the XY position of incident light on the light receiving surface of the first photoelectric conversion element 10 based on the ratio of the current output from each of the four pairs of electrode layers 123 and 133 of the first photoelectric conversion element 10 ( (Coordinates) is calculated and detected. Similarly, the calculation unit 40 determines the XY position of incident light on the light receiving surface of the second photoelectric conversion element 20 based on the ratio of current output from each of the four pairs of electrode layers 223 and 233 of the second photoelectric conversion element 20. (Coordinate) is calculated and detected.
  • the calculating part 40 is based on XY position (coordinate) of the incident light in the light-receiving surface of these 1st photoelectric conversion elements 10, and XY position (coordinate) of the incident light in the light-receiving surface of the 2nd photoelectric conversion element 20.
  • the incident direction of incident light is calculated and detected.
  • the calculation unit 40 refers to the table stored in the storage unit 30, and calculates the total amount of current output from the four pairs of electrode layers 123 and 133 of the first photoelectric conversion element 10 (that is, the intensity of incident light ( Current corresponding to the total amount), and the total amount of current output from the four pairs of electrode layers 223 and 233 of the second photoelectric conversion element 20 (that is, current corresponding to the spot size of the incident light), 2
  • the spot size of incident light on the light receiving surface of the photoelectric conversion element 20 is obtained and detected.
  • the spot size of incident light on the light receiving surface of the second photoelectric conversion element 20 can be detected using only the second photoelectric conversion element 20 without using the first photoelectric conversion element 10. .
  • the storage unit 30 associates the intensity of incident light in the table instead of the output current (total amount) of the first photoelectric conversion element 10.
  • the calculating part 40 should just obtain
  • the light source is moved away from the second photoelectric conversion element 20 from the state where the incident light (wavelength 940 nm) from the light source is focused on the light receiving surface of the second photoelectric conversion element 20 (horizontal axis 0 mm).
  • FIG. 7 shows an example of the detection intensity (relative value) of the incident light by the 2nd photoelectric conversion element 20 at the time.
  • FIG. 7 showing the sensor characteristics, as the light source approaches the second photoelectric conversion element 20 from a state separated from the second photoelectric conversion element 20, in other words, incident light on the light receiving surface of the second photoelectric conversion element 20. It can be seen that the detection intensity of the incident light by the second photoelectric conversion element 20 decreases as the spot size of the second photoelectric conversion element decreases.
  • one reason for the difference in the carrier recovery amount between the one main surface side and the other main surface side of the semiconductor substrate 210 is the difference in the extremely thick passivation layer (20 nm or more).
  • the difference in interface resistance was described.
  • the difference in thickness of the passivation layer is the same, it is not a difference in interface resistance, but by reducing the thickness of the passivation layer (less than 2 nm), the passivation ability of the passivation layer is reduced and recombination is promoted.
  • the change in the short-circuit current Isc due to the spot size may be increased.
  • the passivation layers 220 and 230 are designed to have a thickness in the range of 0.5 nm to 2 nm.
  • the film thicknesses of the passivation layer 220 and the passivation layer 230 are different in the range of 0.5 nm to 2 nm.
  • the sensor characteristics are different from those in FIG. 7, and as shown in FIG. 8, as the spot size of incident light on the light receiving surface of the second photoelectric conversion element 20 increases, The detection intensity of incident light by the photoelectric conversion element 20 is decreased (FIG. 8 shows the same measurement conditions as in FIG. 7). The reason is as follows.
  • reducing the passivation ability means that the number of interface defects in the passivation layer is relatively large, and the carriers generated in the semiconductor substrate are recombined before being recovered. When such a phenomenon occurs, the short-circuit current Isc decreases in the photoelectric conversion element.
  • the short-circuit current Isc detection intensity
  • the detection intensity may decrease as the spot size as shown in FIG.
  • the thickness of the passivation layer is also suitable when focusing on the interface resistance of the passivation layer if the sensor characteristics can be designed so that the detection intensity increases as the spot size increases or the detection intensity increases as the spot size decreases.
  • the thickness of the passivation layer 220 and the thickness of the passivation layer 230 may be different from the preferable thickness range when focusing on the thickness range and the passivation ability of the passivation layer. In short, it is only necessary to secure the above-described sensor characteristics. And the structure of this invention implement
  • the example which the 2nd photoelectric conversion element 20 detects also with the spot size of a low light intensity according to the structure was given.
  • the second photoelectric conversion element 20 detects even a spot size with a low light intensity.
  • FIG. 9 is a cross-sectional view of the second photoelectric conversion element 20 according to a first modification of the first embodiment. As shown in this figure, in the second photoelectric conversion element 20, an insulating layer 235 having a pinhole 35 is provided between the main surface 210SB of the semiconductor substrate 210 and the passivation layer 230 on the back side of the semiconductor substrate 210. It may be.
  • the insulating layer 235 is formed of an insulating and transparent material such as SiNx, SiOx, AlOx, TiOx, TiNx, for example.
  • This insulating layer 235 is a main surface 210SB of the semiconductor substrate 210, as shown in FIGS. 10 and 11, which are diagrams showing the layer on the back surface side of the semiconductor substrate 210 of the second photoelectric conversion element 20 from the light receiving surface side.
  • a plurality of pinholes 35 are provided in a two-dimensional manner along the pinholes 35, and these pinholes 35 are filled with a passivation layer 230.
  • the pinholes 35 may be arranged in a staggered manner. That is, the pinholes 35 adjacent in the Y direction (or X direction) may be staggered in the X direction (or Y direction).
  • a circular shape is shown in a plan view along the main surface of the semiconductor substrate 210, but the shape of the pinhole 35 is not limited to this.
  • the pinhole 35 may be elliptical or polygonal.
  • the diameter of the pinhole 35 is preferably 5 ⁇ m or more and 50 ⁇ m or less, and more preferably about 10 ⁇ m.
  • the interval (center interval) between the pinholes 35 is preferably 50 ⁇ m or more and 500 ⁇ m or less, and more preferably about 100 ⁇ m.
  • the ratio of the total area of the pinhole 35 to the area of the light receiving surface of the second photoelectric conversion element 20 is 0.005%. It is preferably 5% or less and more preferably about 0.01%.
  • the insulating layer 235 and the pinhole 35 are formed using, for example, a photolithography method or a template method. For example, an insulating material film is formed over the entire main surface 210SB (backside main surface 210SB) of the semiconductor substrate 210, and then a pin hole [through hole] 35 penetrating the insulating material film is formed for insulation. Layer 235 is obtained. Thereafter, a passivation layer 230 is formed over the insulating layer 235. Thereby, the passivation layer 230 is filled in the pinhole 35.
  • the passivation layer 230 is filled in the pinhole 35, but the material of the p-type semiconductor layer 231 formed on the passivation layer 230 may be filled.
  • the irradiation region R (see FIG. 11) irradiated with incident light on the light receiving surface decreases (that is, as the density of incident light increases), the number of pinholes 35 in the irradiation region R decreases. Therefore, the output current decreases as the spot size of incident light on the light receiving surface becomes narrower. Details will be described below with reference to FIGS.
  • FIG. 12 is a schematic diagram showing a state of recovery of carriers generated in the semiconductor substrate 210 when the irradiation region R shown in FIG. 11 is wide.
  • FIG. 13 shows a case where the irradiation region R shown in FIG.
  • FIG. 3 is a schematic diagram showing a state of recovery of carriers generated on a semiconductor substrate 210.
  • the state of incidence of incident light is indicated by broken line arrows.
  • holes that are minority carriers among the carriers generated in the semiconductor substrate 210 are indicated by circles, recombined holes are indicated by ⁇ , and the movement of these carriers is indicated by solid arrows. .
  • electrons that are majority carriers are omitted, but the same amount of electrons as the recovered holes are recovered to the outside, and an equilibrium state in the semiconductor substrate is being maintained.
  • the holes generated in the semiconductor substrate 210 are collected by the p-type semiconductor layer 221 through the passivation layer 220 and taken out by the transparent electrode layer 222. Further, the holes generated in the semiconductor substrate 210 are collected by the p-type semiconductor layer 231 through the passivation layer 230 and taken out by the transparent electrode layer 232.
  • the difference between the carrier recovery amount of the p-type semiconductor layer 221 and the carrier recovery amount of the p-type semiconductor layer 231 is reflected in the value of the output current of the second photoelectric conversion element 20, but the insulating layer 235 is a semiconductor substrate. 210 and the transparent electrode layer 232 (specifically, between the back surface 210SB of the semiconductor substrate 210 and the passivation layer 230). Then, on the other side (back side) of the two main surfaces 210 ⁇ / b> S of the semiconductor substrate 210, the holes are blocked by the insulating layer 235 and pass only through the pinholes 35.
  • the resistance substantially increases. Therefore, the output current decreases as the spot size of incident light on the light receiving surface becomes narrower.
  • the output current decreases as the irradiation region R decreases (that is, as the incident light density increases), that is, as the spot size of the incident light on the light receiving surface becomes narrower.
  • an insulating layer 235 is provided between the semiconductor substrate 210 and the passivation layer 230 having the highest resistance.
  • the present invention is not limited to this (that is, the insulating layer 235 may be interposed between any layers between the semiconductor substrate 210 and the transparent electrode layer 232).
  • the pinhole 35 in the insulating layer 235 is made of a high-resistance intrinsic semiconductor when filled with the material of the passivation layer 230, the output current of the second photoelectric conversion element 20 corresponding to the spot size of incident light is reduced. Changes are likely to be large.
  • the structure in which at least one of the doping concentration and the film thickness of the p-type semiconductor layers 221 and 231 is different only by including the above insulating layer 235, the film thickness of the passivation layers 220 and 230, and the hydrogen content A structure in which at least one of them is different, or a structure in which at least one of the thickness and hydrogen content of the passivation layers 220 and 230 is different, and the doping concentration of the above-described p-type semiconductor layers 221 and 231 and
  • the second photoelectric conversion element 20 that does not include a structure in which at least one of the film thicknesses is different may be included, or conversely, the included second photoelectric conversion element 20 may be included. This is because any second photoelectric conversion element 20 can detect even a spot size with low light intensity.
  • FIG. 14 is a cross-sectional view of a second photoelectric conversion element according to a second modification of the first embodiment.
  • the second photoelectric conversion element 20 not only the insulating layer 235 having the pinhole 35 is formed between the back surface 210SB of the semiconductor substrate 210 and the passivation layer 230, but also the light reception of the semiconductor substrate 210.
  • An insulating layer 225 having a pinhole 25 is formed between the main surface 210SU and the passivation layer 220.
  • the insulating layer 225 having the pinhole 25 is between the semiconductor substrate 210 and the transparent electrode layer 221, and the insulating layer 235 having the pinhole 35 is the semiconductor substrate 210 and the transparent electrode. Between the layers 232 is disposed.
  • the pinhole 35 is formed in the same manner as the pinhole 25. That is, after an insulating material film is formed over the entire main surface of the semiconductor substrate 210 (light receiving side main surface 210SU), pin holes [through holes] 25 penetrating the insulating material film are formed to insulate. Layer 225 is obtained. Thereafter, a passivation layer 220 is formed on the insulating layer 235. Thereby, the passivation layer 220 is filled in the pinhole 25. In the drawing, for convenience, only the passivation layer 220 is filled in the pinhole 25, but the material of the p-type semiconductor layer 221 formed on the passivation layer 220 may be filled.
  • both the pinholes 25, 35 have the same pin. Even if it is a hole diameter and a pinhole density, it becomes the 2nd photoelectric conversion element 20 with higher resistance compared with a 1st modification. Therefore, since the current change depending on the spot diameter occurs even in the light intensity lower than that in the first modification, the lower limit of the light intensity capable of detecting the spot diameter is further reduced.
  • the position of the insulating layer 225 is the most among the passivation layer 220, the p-type semiconductor layer 221, and the transparent electrode layer 222 on the light receiving surface side of the second photoelectric conversion element 20.
  • the insulating layer 225 is provided between the high-resistance passivation layer 220 and the semiconductor substrate 210, the insulating layer 225 is not limited to this (that is, any one between the semiconductor substrate 210 and the transparent electrode layer 222). Any insulating layer 225 may be interposed between the two layers).
  • the pinhole 25 in the insulating layer 225 is filled with the material of the passivation layer 220, a high-resistance intrinsic semiconductor is the material. Therefore, the second photoelectric device according to the spot size of incident light is used. Changes in the output current of the conversion element 20 tend to be large.
  • the insulating layer 235 is interposed between the semiconductor substrate 210 and the transparent electrode layer 232.
  • the insulating layer 235 is interposed between the semiconductor substrate 210 and the transparent electrode layer 232.
  • the second photoelectric conversion element 20 may have the insulating layer 225 interposed only between the semiconductor substrate 210 and the transparent electrode layer 222. Even in this case, the output current decreases as the spot size of the incident light on the light receiving surface of the second photoelectric conversion element 20 becomes narrower.
  • the p-type semiconductor layer 221 described above has a structure in which at least one of the thickness and the hydrogen content is different, or a structure in which at least one of the thickness and the hydrogen content of the passivation layers 220 and 230 is different.
  • the second photoelectric conversion element 20 may be the second photoelectric conversion element 20 that does not include a structure in which at least one of the doping concentration and the film thickness is different, or conversely, even if the second photoelectric conversion element 20 is included. I do not care. This is because any second photoelectric conversion element 20 can detect even a spot size with low light intensity.
  • FIG. 15 is a cross-sectional view of a second photoelectric conversion element according to a third modification of the first embodiment. As shown in this figure, in the second photoelectric conversion element 20, on the back surface side of the semiconductor substrate 210, between the semiconductor substrate 210 and the transparent electrode layer 232, specifically, between the passivation layer 230 and the p-type semiconductor layer 231. In addition, a high resistance layer 236 may be interposed.
  • the high resistance layer 236 is formed of a mixed crystal material of, for example, SiNx, SiOx, or SiC and a microcrystalline silicon or amorphous silicon layer. These high resistance layers (mixed crystal layers) are formed, for example, by adjusting the CVD film forming conditions.
  • the high resistance layer 236 formed of such a mixed crystal material containing SiOx has a resistance that is 100 times higher than that of the p-type semiconductor layers 221 and 231 that are conductive semiconductor layers.
  • the carrier recovery amount for minority carriers among the carriers generated in the semiconductor substrate 210 by the received light is reduced between the one main surface side and the other main surface side.
  • the output current decreases as the spot size of the incident light on the light receiving surface of the second photoelectric conversion element 20 becomes narrower.
  • the high resistance layer 236 is interposed between the semiconductor substrate 210 and the transparent electrode layer 232, but the high resistance layer 236 is provided between the semiconductor substrate 210 and the transparent electrode layer 222.
  • the high resistance layer 236 may be interposed between the passivation layer 220 and the p-type semiconductor layer 221.
  • the semiconductor substrate 210 and the transparent electrode layer 232, and between the semiconductor substrate 210 and the transparent electrode layer 222 in detail, between the passivation layer 230 and the p-type semiconductor layer 231, and between the passivation layer 220 and A high resistance layer 236 may be interposed between the p-type semiconductor layer 221 and the p-type semiconductor layer 221.
  • the high resistance layer 236 containing an insulating material may be included between at least one of the semiconductor substrate 210 and the transparent electrode layer 232 and between the semiconductor substrate 210 and the transparent electrode layer 222.
  • the second photoelectric conversion element 20 in which one of the insulating layers 225 and 235 disposed on both main surface sides of the semiconductor substrate 210 is replaced with the high resistance layer 236 may be used. I do not care.
  • a structure in which at least one of them is different, or a structure in which at least one of the thickness and hydrogen content of the passivation layers 220 and 230 is different, and the doping concentration of the p-type semiconductor layers 221 and 231 described above are included.
  • the second photoelectric conversion element 20 that does not include a structure in which at least one of the film thicknesses is different may be included, or conversely, the second photoelectric conversion element 20 that includes the second photoelectric conversion element 20 may be included. This is because any second photoelectric conversion element 20 can detect even a spot size with low light intensity.
  • the conductivity type (n-type) of the semiconductor substrate 210 and the conductivity types of the p-type semiconductor layer 221 and the p-type semiconductor layer 231 are opposite to each other (p-type). Further, the amount of recovered carriers with respect to minority carriers among the carriers generated in the semiconductor substrate 210 by the received light is different between the one main surface side and the other main surface side of the semiconductor substrate 210. In order to provide a difference in the carrier recovery amount, a difference is provided between various layers stacked on the one main surface side of the semiconductor substrate 210 and various layers stacked on the other main surface side.
  • the 2nd photoelectric conversion element 20 when receiving the received light, for example, near infrared light with a wavelength of 900 nm or more and 1200 nm or less, there is preferably a difference in the amount of recovered carriers.
  • Arise for example, in the case of ultraviolet light or visible light having a wavelength of less than 300 nm (for example, a wavelength of 350 nm to 800 nm), the absorption coefficient is high, and carriers are easily generated on the light receiving surface side of the semiconductor substrate 210.
  • the p-type semiconductor layer 221 and the p-type semiconductor layer 231 may have the same concentration of conductive impurities.
  • the p-type semiconductor layer 221 and the p-type semiconductor layer 231 may have the same film thickness.
  • the passivation layer 220 and the passivation layer 230 may have the same film thickness. Further, the passivation layer 220 and the passivation layer 230 may have the same hydrogen content.
  • the position of the subject in the Z direction (depth) can be detected by detecting the spot size of the incident light incident on the photoelectric conversion element. Then, the three-dimensional position of the subject can be detected from the incident direction of the incident light and the position in the Z direction (depth).
  • FIG. 16 is a diagram illustrating a configuration of a three-dimensional sensor according to the second embodiment.
  • the three-dimensional sensor 2 shown in this figure is an optical system that collects an optical image (diffused light) emitted from a subject by irradiating the subject with laser light or the like of a light emitting unit 60 built in the photoelectric conversion device 1.
  • the lens 50 and the above-described photoelectric conversion device 1 that receives the condensed light from the optical lens 50, that is, the first photoelectric conversion element 10, the second photoelectric conversion element 20, the storage unit 30, and the calculation unit 40 are included.
  • emits the light used as the base of the incident light to the 1st photoelectric conversion element 10 and the 2nd photoelectric conversion element 20 can change the wavelength range of the emitted light suitably (for example, red light, green Light, blue light or the like is emitted as appropriate).
  • the first photoelectric conversion element 10 is arranged at the focal position of the optical lens 50.
  • the 1st photoelectric conversion element 10 produces
  • the first photoelectric conversion element 10 distributes the generated current to the four electrode layers 123 (133) arranged on the four sides according to the XY position (coordinates) of the center of the incident light on the light receiving surface (XY plane). And output.
  • the first photoelectric conversion element 10 transmits incident light.
  • the second photoelectric conversion element 20 responds to a carrier recovery amount difference between one main surface side and the other main surface side of the semiconductor substrate 210 among carriers generated according to defocused incident light incident on the light receiving surface. Generate current. Thereby, the 2nd photoelectric conversion element 20 produces
  • the second photoelectric conversion element 20 distributes the generated current to the four electrode layers 223 (233) arranged on the four sides according to the XY position (coordinates) of the center of the incident light on the light receiving surface (XY plane). And output.
  • the storage unit 30 includes an output current (total amount) of the first photoelectric conversion element 10 (that is, a current corresponding to the intensity (total amount) of incident light) and an output current (total amount) of the second photoelectric conversion element 20 (that is, Current corresponding to the spot size of the incident light) and the spot size of the incident light on the light receiving surface of the second photoelectric conversion element 20, and further, the position of the subject in the Z direction (depth) is associated with this spot size.
  • the table is stored in advance.
  • the calculation unit 40 calculates and detects the intensity (total amount) of incident light according to the total amount of current output from the four electrode layers 123 (133) of the first photoelectric conversion element 10 as described above.
  • the arithmetic unit 40 is based on the ratio of the current output from each of the four extraction electrode layers 123 (133) of the first photoelectric conversion element 10 on the light receiving surface of the first photoelectric conversion element 10.
  • the XY position (coordinates) of incident light is calculated and detected.
  • the calculation unit 40 determines the incident light XY on the light receiving surface of the second photoelectric conversion element 20 based on the ratio of the current output from each of the four extraction electrode layers 223 (233) of the second photoelectric conversion element 20.
  • the position (coordinates) is calculated and detected.
  • the calculation unit 40 calculates the incident light from the XY position (coordinates) of the incident light on the light receiving surface of the first photoelectric conversion element 10 and the XY position (coordinates) of the incident light on the light receiving surface of the second photoelectric conversion element 20.
  • the incident direction is calculated and detected.
  • the calculation unit 40 refers to the table stored in the storage unit 30, and the total amount of current output from the first photoelectric conversion element 10 (that is, the current according to the intensity (total amount) of incident light), and The spot size of incident light on the light receiving surface of the second photoelectric conversion element 20 corresponding to the total amount of current output from the second photoelectric conversion element 20 (that is, the current corresponding to the spot size of incident light), and the subject The position in the Z direction (depth) is obtained and detected.
  • the calculation unit 40 detects the three-dimensional position of the subject from the incident direction of the incident light detected as described above and the position in the Z direction (depth).
  • the present invention is not limited to the above-described embodiment and can be variously modified.
  • the heterojunction type photoelectric conversion elements 10 and 20 are illustrated as shown in FIGS. 2 and 3, but the feature of the present invention is not limited to the heterojunction type photoelectric conversion element, and is also a homojunction type.
  • the present invention can be applied to various photoelectric conversion elements such as a type photoelectric conversion element or a photoelectric conversion element using polysilicon.
  • the n-type semiconductor substrate is exemplified as the semiconductor substrates 110 and 210.
  • the semiconductor substrates 110 and 210 are p-type in which a crystalline silicon material is doped with a p-type dopant (for example, boron (B)). It may be a semiconductor substrate.
  • the conductive semiconductor layers formed on both sides are n-type semiconductor layers.
  • a photoelectric conversion element having a crystalline silicon substrate is exemplified, but the present invention is not limited to this.
  • the photoelectric conversion element may have a gallium arsenide (GaAs) substrate.
  • Photoelectric conversion apparatus 2 Three-dimensional sensor 10 1st photoelectric conversion element 110 Semiconductor substrate 110S Main surface of a semiconductor substrate 110SU Main surface of the light-receiving side which is one side (other side) of two main surfaces 110SB The other of two main surfaces Main surface on the back side which is the side (one side) 120 Passivation layer 121 P-type semiconductor layer 122 Transparent electrode layer 123 Extraction electrode layer 130 Passivation layer 131 N-type semiconductor layer 132 Transparent electrode layer 133 Extraction electrode layer 20 Second photoelectric conversion element 210 Semiconductor substrate [photoelectric conversion substrate] 210S Main surface of the semiconductor substrate 210SU Main surface on the light receiving side that is one side (the other side) of the two main surfaces 210SB Main surface on the back side that is the other side (one side) of the two main surfaces 220 Passivation layer [First Passivation layer / second passivation layer] 221 p-type semiconductor layer [first semiconductor layer / second semiconductor layer] 222

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Abstract

La présente invention concerne un dispositif de conversion photoélectrique et un élément de conversion photoélectrique permettant de détecter la taille de spot d'une lumière incidente. Un second élément de conversion photoélectrique 20 contient un substrat semi-conducteur 210, une couche semi-conductrice de type p 221, et une couche semi-conductrice de type p 231. Dans ce second élément de conversion photoélectrique 20, le type de conductivité du substrat semi-conducteur 210 est opposé au type de conductivité de la couche semi-conductrice de type p 221 et de la couche semi-conductrice de type p 231, et la quantité de porteurs récupérés par rapport à des porteurs minoritaires parmi des porteurs générés dans le substrat semi-conducteur 210 par la lumière reçue diffère entre un côté de surface principale et un autre côté de surface principale du substrat semi-conducteur 210.
PCT/JP2019/005128 2018-02-14 2019-02-13 Élément de conversion photoélectrique et dispositif de conversion photoélectrique WO2019159976A1 (fr)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100264505A1 (en) * 2003-05-05 2010-10-21 Peter Steven Bui Photodiodes with PN Junction on Both Front and Back Sides
JP2017506436A (ja) * 2014-02-27 2017-03-02 レイセオン カンパニー 同時デュアルバンド検出器
JP2017228750A (ja) * 2016-06-20 2017-12-28 久保　征治 フォトダイオード並びにその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100264505A1 (en) * 2003-05-05 2010-10-21 Peter Steven Bui Photodiodes with PN Junction on Both Front and Back Sides
JP2017506436A (ja) * 2014-02-27 2017-03-02 レイセオン カンパニー 同時デュアルバンド検出器
JP2017228750A (ja) * 2016-06-20 2017-12-28 久保　征治 フォトダイオード並びにその製造方法

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