WO2019150528A1 - データの書き込み方法及び磁気メモリ - Google Patents
データの書き込み方法及び磁気メモリ Download PDFInfo
- Publication number
- WO2019150528A1 WO2019150528A1 PCT/JP2018/003435 JP2018003435W WO2019150528A1 WO 2019150528 A1 WO2019150528 A1 WO 2019150528A1 JP 2018003435 W JP2018003435 W JP 2018003435W WO 2019150528 A1 WO2019150528 A1 WO 2019150528A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- voltage
- orbit torque
- spin orbit
- torque wiring
- temperature
- Prior art date
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 81
- 238000000034 method Methods 0.000 title claims abstract description 29
- 230000015654 memory Effects 0.000 title claims description 62
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 63
- 230000007613 environmental effect Effects 0.000 claims description 74
- 230000005415 magnetization Effects 0.000 claims description 36
- 230000000694 effects Effects 0.000 claims description 33
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 14
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 11
- 229910052721 tungsten Inorganic materials 0.000 claims description 11
- 239000010937 tungsten Substances 0.000 claims description 11
- 229910052741 iridium Inorganic materials 0.000 claims description 5
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- 101100167360 Drosophila melanogaster chb gene Proteins 0.000 description 112
- 229910052751 metal Inorganic materials 0.000 description 26
- 239000002184 metal Substances 0.000 description 26
- 239000000463 material Substances 0.000 description 24
- 230000008859 change Effects 0.000 description 16
- 230000005355 Hall effect Effects 0.000 description 10
- 239000012212 insulator Substances 0.000 description 9
- 230000003993 interaction Effects 0.000 description 8
- 230000005290 antiferromagnetic effect Effects 0.000 description 5
- 229910020068 MgAl Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 229910001385 heavy metal Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910019236 CoFeB Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000003302 ferromagnetic material Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910005347 FeSi Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910001291 heusler alloy Inorganic materials 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910020598 Co Fe Inorganic materials 0.000 description 1
- 229910002519 Co-Fe Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910001106 Ho alloy Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910017028 MnSi Inorganic materials 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- 229910019041 PtMn Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910005642 SnTe Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000002885 antiferromagnetic material Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1697—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
Definitions
- the present invention relates to a data writing method and a magnetic memory.
- a giant magnetoresistive (GMR) element composed of a multilayer film of a ferromagnetic layer and a nonmagnetic layer as an element utilizing a resistance value change (magnetoresistive change) based on a change in relative angle of magnetization of two ferromagnetic layers
- a tunnel magnetoresistive (TMR) element using an insulating layer (tunnel barrier layer, barrier layer) as a nonmagnetic layer is known.
- the MRAM reads and writes data using the characteristic that the element resistance of the GMR element or the TMR element changes when the directions of magnetization of the two ferromagnetic layers sandwiching the insulating layer change.
- writing magnetization reversal
- writing is performed using spin transfer torque (STT) generated by flowing current in the stacking direction of the magnetoresistive effect element.
- STT spin transfer torque
- SOT spin orbit torque
- Non-Patent Document 1 a writing method using spin orbit torque (SOT) (for example, Non-Patent Document 1).
- SOT is induced by a pure spin current generated by spin orbit interaction or a Rashba effect at the interface between different materials.
- a current for inducing SOT in the magnetoresistive effect element flows in a direction crossing the stacking direction of the magnetoresistive effect element. That is, there is no need to pass a current in the stacking direction of the magnetoresistive effect element, and the life of the magnetoresistive effect element is expected to be extended.
- the magnetoresistive effect element records data.
- the write error rate of the magnetoresistive effect element is required to be 10 ⁇ 7 or less.
- the spin orbit torque type magnetoresistive effect element that writes data using SOT does not pass a current in the stacking direction of the magnetoresistive effect element. Therefore, there is almost no need to consider the dielectric breakdown of the magnetoresistive effect element, and a large write current can be flowed in principle. As the amount of write current applied increases, a large number of spins are injected into the ferromagnetic material into the magnetoresistive element. That is, it has been considered that the write error rate of the magnetoresistive element can be further reduced by flowing a large write current.
- the present inventors have found that the write error rate of the magnetoresistive element deteriorates when a predetermined voltage value or current value is applied even if it is a spin orbit torque type magnetoresistive element. I found.
- the present invention has been made in view of the above circumstances, and provides a data writing method capable of stably writing data to a magnetic memory.
- a magnetic memory capable of stably writing data is provided.
- this invention provides the following means in order to solve the said subject.
- a data writing method includes a spin orbit torque wiring extending in a first direction and a layer on one surface of the spin orbit torque wiring, and the first strong orbit from the spin orbit torque wiring side.
- a spin orbit torque type magnetoresistive effect element including a functional portion including a magnetic layer, a nonmagnetic layer, and a second ferromagnetic layer
- a voltage applied in the first direction of the spin orbit torque wiring is set to an environmental temperature.
- the predetermined write value is not less than a predetermined value and not more than a predetermined value at an ambient temperature of ⁇ 40 ° C., 20 ° C., and 100 ° C., and the write error rate when reversing the magnetization of the first ferromagnetic layer is the critical value.
- the limit write voltage that is equal to the write error rate when the write voltage is applied, and the limit write at ⁇ 40 ° C. in the temperature range where the ambient temperature is less than 20 ° C.
- the voltage is located on a straight line connecting the pressure and the limit writing voltage at 20 ° C., and in a temperature region where the environmental temperature is 20 ° C. or higher, on the line connecting the limit writing voltage at 20 ° C. and the limit writing voltage at 100 ° C. Is the voltage located at.
- the critical write voltage at 20 ° C. or higher in the first direction of the spin orbit torque wiring in the first direction when the environmental temperature is 20 ° C. or higher, the critical write voltage at 20 ° C. or higher in the first direction of the spin orbit torque wiring in the first direction. Is applied at the time of data writing, and when the environmental temperature is less than 20 ° C., the critical write voltage at the environmental temperature is higher than the critical write voltage at the environmental temperature in the first direction of the spin orbit torque wiring. You may apply the voltage 1.54 times or less of the writing voltage at the time of data writing.
- a magnetic memory according to a second aspect is formed by stacking a spin orbit torque wiring extending in a first direction and one surface of the spin orbit torque wiring, and the first ferromagnetic layer from the spin orbit torque wiring side.
- a voltage source connected to the spin orbit torque wiring and capable of applying a voltage not lower than a critical write voltage at an ambient temperature and not higher than a predetermined value in the first direction, and a functional unit including a nonmagnetic layer and a second ferromagnetic layer;
- the environmental temperature is ⁇ 40 ° C., 20 ° C., and 100 ° C.
- the limit write voltage at -40 ° C is connected to the limit write voltage at 20 ° C.
- a voltage located on the straight line, in the temperature range of the ambient temperature is 20 ° C. or higher, a voltage located on the straight line connecting the limit writing voltage at the limit writing voltage and 100 ° C. at 20 ° C..
- the magnetic memory according to the above aspect may further include a thermometer connected to the spin orbit torque wiring and converting the temperature of the spin orbit torque wiring from a resistance value of the spin orbit torque wiring.
- data can be stably written.
- FIG. 6 shows changes in the write error rate of the magnetic memory of Example 1 when the applied voltage value of the write pulse is changed. 6 shows changes in the write error rate of the magnetic memory of Example 1 when the applied voltage value of the write pulse is changed. The change of the write error rate of the magnetic memory of Example 6 when changing the applied voltage value of the write pulse is shown. The change of the write error rate of the magnetic memory of Example 6 when changing the applied voltage value of the write pulse is shown.
- the change of the write error rate of the magnetic memory of Example 9 when changing the applied voltage value of the write pulse is shown.
- the change of the write error rate of the magnetic memory of Example 9 when changing the applied voltage value of the write pulse is shown.
- the change of the write error rate of the magnetic memory of Example 12 when changing the applied voltage value of the write pulse is shown.
- the change of the write error rate of the magnetic memory of Example 12 when changing the applied voltage value of the write pulse is shown.
- FIG. 1 is a schematic diagram of a magnetic memory 100 according to the present embodiment.
- the magnetic memory 100 includes a spin orbit torque type magnetoresistance effect element 10 and a voltage source 20.
- the spin orbit torque type magnetoresistive effect element 10 includes a functional unit 1 and a spin orbit torque wiring 2.
- a conductive first electrode 3 and a second electrode 4 are provided at positions sandwiching the functional unit 1 of the spin orbit torque wiring 2.
- the first electrode 3 and the second electrode 4 may be directly connected to the spin orbit torque wiring 2 or may be connected via an insulating layer. When these are directly connected to the spin orbit torque wiring 2, current driving is performed, and when these are connected to the spin orbit torque wiring 2 via an insulator, voltage driving is performed.
- the first direction in which the spin orbit torque wiring 2 extends is the x direction
- the stacking direction (second direction) of the functional unit 1 is the z direction
- the direction perpendicular to both the x direction and the z direction is the y direction. It is prescribed and explained.
- the spin orbit torque wiring 2 extends in the x direction.
- the spin orbit torque wiring 2 is connected to one surface of the functional unit 1 in the z direction.
- the spin orbit torque wiring 2 may be directly connected to the functional unit 1 or may be connected via another layer.
- the spin orbit torque wiring 2 is made of a material that generates a spin current by the spin Hall effect when the current I flows. As such a material, any material that can generate a spin current in the spin orbit torque wiring 2 is sufficient. Therefore, the material is not limited to a material composed of a single element, and may be composed of a portion composed of a material that easily generates a spin current and a portion composed of a material that hardly generates a spin current.
- the spin Hall effect is a phenomenon in which a spin current is induced in a direction orthogonal to the direction of the current I based on the spin-orbit interaction when the current I is passed through the material.
- the mechanism by which spin current is generated by the spin Hall effect will be described.
- a current I flows along the spin orbit torque wiring 2.
- the first spin S1 oriented in one direction and the second spin S2 oriented in the opposite direction to the first spin S1 are bent in directions orthogonal to the current, respectively.
- the first spin S1 is bent in the z direction with respect to the traveling direction
- the second spin S2 is bent in the ⁇ z direction with respect to the traveling direction.
- the normal Hall effect and the spin Hall effect are common in that the moving (moving) charge (electrons) can bend in the moving (moving) direction.
- the normal Hall effect charged particles moving in a magnetic field receive the Lorentz force and bend the direction of movement, whereas in the Spin Hall effect, electrons move only even when no magnetic field exists (currents). The only difference is that the spin movement direction is bent.
- the number of electrons of the first spin S1 is equal to the number of electrons of the second spin S2 in a non-magnetic material (a material that is not a ferromagnetic material), the number of electrons of the first spin S1 directed in the + z direction and the ⁇ z direction in the figure.
- the number of electrons of the second spin S2 going to is equal. In this case, the charge flows cancel each other, and the amount of current becomes zero.
- a spin current without an electric current is particularly called a pure spin current.
- the electron flow of the first spin S1 is J ⁇
- the electron flow of the second spin S2 is J ⁇
- the spin current J S flows in the z direction in the figure.
- a first ferromagnetic layer 1 ⁇ / b> A described later is present on the upper surface of the spin orbit torque wiring 2. Therefore, spin is injected into the first ferromagnetic layer 1A.
- the spin orbit torque wiring 2 is made of any one of a metal, an alloy, an intermetallic compound, a metal boride, a metal carbide, a metal silicide, and a metal phosphide having a function of generating a spin current by a spin Hall effect when a current flows. Composed.
- the main configuration of the spin orbit torque wiring 2 is preferably a nonmagnetic heavy metal.
- the heavy metal means a metal having a specific gravity equal to or higher than yttrium.
- the nonmagnetic heavy metal is preferably a nonmagnetic metal having an atomic number of 39 or more having d electrons or f electrons in the outermost shell. These nonmagnetic metals have a large spin-orbit interaction that causes a spin Hall effect.
- Electrons generally move in the opposite direction of current, regardless of their spin direction.
- a nonmagnetic metal having d electrons or f electrons in the outermost shell and having a large atomic number has a large spin orbit interaction and a strong spin Hall effect. For this reason, the direction in which electrons move depends on the direction of spin of electrons. Therefore, spin current JS is likely to occur in these nonmagnetic heavy metals.
- the spin orbit torque wiring 2 may include a magnetic metal.
- the magnetic metal refers to a ferromagnetic metal or an antiferromagnetic metal. If a non-magnetic metal contains a trace amount of magnetic metal, it becomes a spin scattering factor. When the spin is scattered, the spin-orbit interaction is enhanced, and the generation efficiency of the spin current with respect to the current is increased.
- the main configuration of the spin orbit torque wiring 2 may be composed only of an antiferromagnetic metal.
- the molar ratio of the magnetic metal added is preferably sufficiently smaller than the total molar ratio of the elements constituting the spin orbit torque wiring.
- the molar ratio of the magnetic metal to be added is preferably 3% or less.
- the spin orbit torque wiring 2 may include a topological insulator.
- a topological insulator is a substance in which the inside of the substance is an insulator or a high-resistance substance, but a spin-polarized metal state is generated on the surface thereof. This material generates an internal magnetic field due to spin-orbit interaction. Therefore, even without an external magnetic field, a new topological phase appears due to the effect of spin-orbit interaction. This is a topological insulator, and a pure spin current can be generated with high efficiency by strong spin-orbit interaction and breaking inversion symmetry at the edge.
- topological insulator examples include SnTe, Bi 1.5 Sb 0.5 Te 1.7 Se 1.3 , TlBiSe 2 , Bi 2 Te 3 , Bi 1-x Sb x , (Bi 1-x Sb x ) 2 Te 3 and the like are preferable. These topological insulators can generate a spin current with high efficiency.
- the functional unit 1 includes a first ferromagnetic layer 1A, a second ferromagnetic layer 1B, and a nonmagnetic layer 1C sandwiched between them.
- the functional unit 1 is stacked in a second direction (z direction) intersecting with the spin orbit torque wiring 2.
- the resistance value is changed by the relative angle of the magnetization M 1B of the magnetization M 1A and the second ferromagnetic layer 1B of the first ferromagnetic layer 1A is changed.
- Magnetization M 1B of the second ferromagnetic layer 1B is fixed in one direction (z-direction), the direction of magnetization M 1A of the first ferromagnetic layer 1A is varied relative to the magnetization M 1B.
- the second ferromagnetic layer 1B may be referred to as a fixed layer, a reference layer, or the like, and the first ferromagnetic layer 1A may be referred to as a free layer, a recording layer, or the like.
- the coercivity of the second ferromagnetic layer 1B is made larger than the coercivity of the first ferromagnetic layer 1A.
- an exchange bias type spin valve type MRAM
- the magnetization M 1B of the second ferromagnetic layer 1B is fixed by exchange coupling with the antiferromagnetic layer.
- the functional unit 1 When the nonmagnetic layer 1C is made of an insulator, the functional unit 1 has the same configuration as a tunneling magnetoresistive (TMR) element, and when it is made of a metal, the magnetoresistive effect (GMR: Giant Magnetoresistance).
- TMR tunneling magnetoresistive
- GMR Giant Magnetoresistance
- the laminated structure of the functional unit 1 can employ a laminated structure of a known magnetoresistive element.
- each layer may be composed of a plurality of layers, or may be provided with other layers such as an antiferromagnetic layer for fixing the magnetization direction of the second ferromagnetic layer 1B.
- the second ferromagnetic layer 1B is called a fixed layer or a reference layer
- the first ferromagnetic layer 1A is called a free layer or a storage layer.
- the in-plane magnetization in which the easy magnetization axis is oriented in the xy in-plane direction may be a membrane.
- a ferromagnetic material can be applied to the first ferromagnetic layer 1A and the second ferromagnetic layer 1B.
- a metal selected from the group consisting of Cr, Mn, Co, Fe, and Ni, an alloy containing one or more of these metals, these metals and at least one element of B, C, and N are included. Alloys that can be used can be used. Specifically, Co—Fe, Co—Fe—B, and Ni—Fe can be exemplified.
- the first ferromagnetic layer 1A is an in-plane magnetization film, it is preferable to use, for example, a Co—Ho alloy (CoHo 2 ), an Sm—Fe alloy (SmFe 12 ), or the like.
- the Heusler alloy includes an intermetallic compound having a chemical composition of X 2 YZ, where X is a transition metal element or noble metal element of Co, Fe, Ni, or Cu group on the periodic table, and Y is Mn, V , Cr or Ti group transition metal or X element species, and Z is a group III to group V typical element.
- X is a transition metal element or noble metal element of Co, Fe, Ni, or Cu group on the periodic table
- Y is Mn, V , Cr or Ti group transition metal or X element species
- Z is a group III to group V typical element.
- Co 2 FeSi, Co 2 FeGe , Co 2 FeGa, Co 2 MnSi, Co 2 Mn 1-a Fe a Al b Si 1-b, Co 2 FeGe 1-c Ga c and the like.
- a layer made of an antiferromagnetic material such as IrMn or PtMn may be laminated on the second ferromagnetic layer 1B.
- a known material can be used for the nonmagnetic layer 1C.
- the nonmagnetic layer 1C is made of an insulator (when it is a tunnel barrier layer), as the material, Al 2 O 3 , SiO 2 , MgO, MgAl 2 O 4, or the like can be used.
- a material in which a part of Al, Si, Mg is substituted with Zn, Be, or the like can also be used.
- MgO and MgAl 2 O 4 are materials that can realize a coherent tunnel, spin can be injected efficiently.
- the nonmagnetic layer 1C is made of a metal, Cu, Au, Ag, or the like can be used as the material thereof.
- the nonmagnetic layer 1C is made of a semiconductor, Si, Ge, CuInSe 2 , CuGaSe 2 , Cu (In, Ga) Se 2 or the like can be used as the material.
- the functional unit 1 may have other layers.
- An underlayer may be provided on the surface of the first ferromagnetic layer 1A opposite to the nonmagnetic layer 1C. It is preferable that the layer disposed between the spin orbit torque wiring 2 and the first ferromagnetic layer 1 ⁇ / b> A does not dissipate the spin propagating from the spin orbit torque wiring 2.
- the layer disposed between the spin orbit torque wiring 2 and the first ferromagnetic layer 1 ⁇ / b> A does not dissipate the spin propagating from the spin orbit torque wiring 2.
- silver, copper, magnesium, aluminum, and the like have a long spin diffusion length of 100 nm or more and are difficult to dissipate spin.
- the thickness of this layer is preferably less than or equal to the spin diffusion length of the material constituting the layer. If the thickness of the layer is less than or equal to the spin diffusion length, the spin propagating from the spin orbit torque wiring 2 can be sufficiently transmitted to the first ferromagnetic layer 1A.
- the voltage source 20 is connected to the spin orbit torque wiring 2 and applies a voltage in the x direction of the spin orbit torque wiring 2.
- the voltage source 20 may be directly connected to the spin orbit torque wiring 2 or may be indirectly connected as long as a voltage can be applied in the x direction of the spin orbit torque wiring 2.
- the voltage source 20 applies a voltage that is greater than or equal to the critical write voltage at the ambient temperature and less than or equal to a predetermined value in the x direction of the spin orbit torque wiring 2 during data write.
- the environmental temperature is the temperature of the spin orbit torque type magnetoresistive effect element 10, and more specifically, the temperature of the spin orbit torque wiring 2.
- the critical write voltage V 0 is obtained by the following relational expression.
- a write error rate occurring in functional unit 1 (when reversing the magnetization M 1A of the first ferromagnetic layer 1A of the functional unit 1, in the desired direction
- the probability that the magnetization M 1A is not oriented and a writing error occurs) is in the range of 10 ⁇ 3 to 10 ⁇ 4 .
- the write error rate when a critical write voltage is applied is 10 ⁇ 3 . Since the magnetic anisotropy of the first ferromagnetic layer 1A varies depending on the temperature, and the resistance value of the spin orbit torque wiring 2 also varies depending on the temperature, the critical write voltage varies depending on the environmental temperature.
- the critical write voltage at the ambient temperature which is the lower limit value that can be applied by the voltage source 20
- each critical write voltage is plotted on a graph with the horizontal axis representing temperature and the vertical axis representing voltage.
- the plotted critical writing voltage value at ⁇ 40 ° C. and the critical writing voltage value at 20 ° C. are connected by a straight line.
- the plotted critical writing voltage value at 20 ° C. and the critical writing voltage value at 100 ° C. are connected by a straight line.
- the voltage located on these lines can be used as the estimated critical write voltage at each temperature. That is, the estimated critical write voltage is a voltage located on a straight line connecting the critical write voltage at ⁇ 40 ° C. and the critical write voltage at 20 ° C.
- the predetermined value that is the upper limit value that can be applied by the voltage source 20 satisfies the following relationship.
- the predetermined value is the write error rate when the magnetization M 1A of the first ferromagnetic layer 1A is reversed, and the write when the critical write voltage V 0 is applied This is a limit write voltage equal to the error rate (10 ⁇ 3 ).
- the predetermined value is a voltage located on a straight line connecting the limit write voltage at ⁇ 40 ° C. and the limit write voltage at 20 ° C.
- the predetermined value is a voltage located on a straight line connecting the limit write voltage at 20 ° C. and the limit write voltage at 100 ° C.
- the voltage value applied in the x direction of the spin orbit torque wiring 2 has no upper limit in principle. If a large voltage is applied, a large write current can be passed through the spin orbit torque wiring 2, and in principle, the write error rate of the magnetoresistive effect element can be further reduced.
- FIG. 2 is a diagram showing a change in MR ratio of the functional unit (magnetoresistance effect element) 1 when the write voltage value applied in the x direction of the spin orbit torque wiring 2 is changed.
- the MR ratio shown here is (R ⁇ Rp) / Rp, R is the measured resistance value, and Rp is the magnetization M 1A of the first ferromagnetic layer 1A and the magnetization M 1B of the second ferromagnetic layer 1B.
- the MR ratio starts to vibrate between a high state and a low state.
- the magnetization M 1B of the magnetization M 1A and the second ferromagnetic layer 1B of the first ferromagnetic layer 1A is anti equilibrium, despite the application of a write voltage, the equilibrium state and the reaction equilibrium The state is no longer stable between. That is, when a voltage higher than a predetermined value is applied, data cannot be recorded stably.
- the predetermined value that is the upper limit value that can be applied by the voltage source 20 is preferably a voltage that is not lower than the critical write voltage at the environmental temperature and not higher than 1.65 times the critical write voltage at 20 ° C.
- the voltage is preferably not less than the critical writing voltage at the environmental temperature and not more than 1.54 times the critical writing voltage at 20 ° C.
- V 0 is a critical write voltage at 20 ° C.
- t is an environmental temperature (° C.).
- the voltage source 20 can apply these voltages.
- the magnetization reversal of the first ferromagnetic layer 1A occurs, but the write error rate cannot be said to be sufficiently small.
- the magnetization of the first ferromagnetic layer 1A can be more stably reversed. That is, more stable data writing can be realized. If a voltage higher than the above value is applied, the write error rate of the magnetic memory 100 can be suppressed to 10 ⁇ 7 or less.
- the spin orbit torque wiring 2 is tungsten, it is preferable to apply a voltage equal to or higher than the lower limit voltage V min below.
- V min (9.3 ⁇ 10 ⁇ 3 ⁇ t + 0.835) ⁇ V o .
- the spin orbit torque wiring 2 is tantalum, it is preferable to apply a voltage equal to or higher than the lower limit voltage V min below.
- V min (0.8 ⁇ 10 ⁇ 3 ⁇ t + 1.005) ⁇ V o .
- the spin orbit torque wiring 2 is iridium, it is preferable to apply a voltage equal to or higher than the lower limit voltage V min below.
- V min (1.1 ⁇ 10 ⁇ 3 ⁇ t + 1.0375) ⁇ V o .
- the spin orbit torque wiring 2 is platinum, it is preferable to apply a voltage equal to or higher than the following lower limit voltage V min .
- V min (0.2 ⁇ 10 ⁇ 3 ⁇ t + 1.005) ⁇ V o .
- V 0 is a critical write voltage at 20 ° C.
- t is an environmental temperature (° C.).
- the voltage applied in the x direction of the spin orbit torque wiring 2 is preferably 1.2 times or more and 1.54 times or less the critical writing voltage.
- the environmental temperature to which the magnetic memory 100 is exposed varies depending on the use state of the user. Therefore, there is a case where guarantee of data in a wide temperature range from ⁇ 40 ° C. to 100 ° C. is required. If a voltage 1.2 to 1.54 times the critical write voltage is applied in the x direction of the spin orbit torque wiring 2, data can be stably written in a wide temperature range from -40 ° C to 100 ° C. it can.
- FIG. 3 is a schematic cross-sectional view of another example of the magnetic memory according to the present embodiment.
- the magnetic memory 101 may include a thermometer 30.
- the thermometer 30 converts the temperature of the spin orbit torque wiring 2 from the resistance value of the spin orbit torque wiring 2.
- the converted temperature is sent to the voltage control unit 40.
- the voltage control unit 40 determines the voltage that the voltage source 20 applies to the spin orbit torque wiring 2 based on the temperature.
- thermometer 30 If the temperature at the time of use is measured by the thermometer 30, it becomes unnecessary to limit the write voltage range to a controllable range over the entire environmental temperature range in which the magnetic memory is used.
- the write voltage can be determined in accordance with the environmental temperature actually used, and more optimal data writing can be performed.
- thermometers 30 are not limited to one and may be plural.
- the thermometer 30 may be installed at each of four corner positions when the spin orbit torque wiring 2 is viewed from the z direction.
- the spin memory torque type magnetoresistive effect element 10 including the functional unit 1 and the spin orbit torque wiring 2 is one in the magnetic memories 100 and 101.
- the distance between adjacent spin orbit torque type magnetoresistive elements 10 be as close as possible. Therefore, the heat generation of the adjacent spin orbit torque type magnetoresistive effect element 10 may affect the write voltage value. In this case, more accurate data writing can be performed by accurately measuring the temperature of each spin orbit torque wiring 2 with a plurality of thermometers 30.
- data can be stably written.
- the data writing method according to the present embodiment controls the write voltage applied in the x direction of the spin orbit torque wiring 2 of the spin orbit torque type magnetoresistive effect element 10 described above.
- the writing voltage should be above the critical writing voltage at the ambient temperature and below the specified value.
- the predetermined value is obtained in the same manner as described above.
- the writing voltage is preferably not less than 1.65 times the critical writing voltage at the environmental temperature and not lower than 20 ° C., and the environmental temperature is less than 20 ° C.
- the critical writing voltage is preferably not less than the critical writing voltage at ambient temperature and not more than 1.54 times the critical writing voltage at 20 ° C.
- the write voltage is preferably 1.01 or more times the critical write voltage in the temperature region of 20 ° C. or more, more preferably 1.08 or more times the critical write voltage, and 1.15 times or more the critical write voltage. More preferably. In the temperature region below 20 ° C., the write voltage is preferably 1.05 times or more the critical write voltage. Further, the writing voltage is more preferably 1.2 times or more and 1.54 times or less of the critical writing voltage in a temperature range of ⁇ 40 ° C. or more and 100 ° C. or less.
- the material of the spin orbit torque wiring 2 is specified, it is preferable to determine the upper limit value and the lower limit value applied at the time of data writing based on the above relational expression.
- the critical write voltage at the ambient temperature may be measured at each temperature, or an approximate value of the critical write voltage in other temperature ranges may be calculated from the critical write voltages at ⁇ 40 ° C., 20 ° C., and 100 ° C.
- data can be stably written in the magnetic memory.
- Example 1 A spin orbit torque type magnetoresistive element 10 shown in FIG. 1 was produced. 3 nm of tungsten (W) was laminated on the thermally oxidized Si substrate. Then, the layer made of tungsten was processed to have a width of 50 nm and a length of 300 nm to form a spin orbit torque wiring 2. The periphery was covered with an insulating film made of silicon oxide.
- CoFeB (thickness 1 nm), MgAl 2 O 4 (thickness 3 nm), CoFeB (thickness 1 nm), Ta (thickness 0.4 nm), [Co (thickness 0.4 nm) / Pt (thickness 0.8 nm)] 4 , Co (thickness 0.4 nm), Ru (thickness 0.4 nm), [Co (thickness 0.4 nm) / Pt (thickness 0.8 nm)] 5 , Co (thickness 0) .4 nm) and Pt (thickness 10 nm) in this order.
- CoFeB deposited first corresponds to the first ferromagnetic layer 1A
- MgAl 2 O 4 corresponds to the nonmagnetic layer 1C
- SAF (synthetic antiferromagnetic) structure corresponds to the second ferromagnetic layer 1B.
- the first ferromagnetic layer 1A is a perpendicular magnetization film.
- the spin orbit torque type magnetoresistive effect elements 10 were arranged in an array of 10 ⁇ 10, and each spin orbit torque wiring 2 was connected to the voltage source 20 to complete the magnetic memory. Then, a write pulse was applied to the spin orbit torque wiring 2 to evaluate a change in the write error rate. At the time of writing, a magnetic field of 100 Oe was applied in the x direction. The write pulse has a pulse width of 10 nsec. A cycle time of 60 nsec of 10 nsec for writing, 10 nsec for standby, 20 nsec for reading, and 10 nsec for standby was defined as one cycle time.
- the resistance value of each element is measured in the low resistance state and the high resistance state, and the average resistance of each element is used as a reference for writing data of “0” and “1”, and the target write state cannot be realized. Counted in error. At the time of reading data, a voltage of 1 mV was applied in the stacking direction of the functional unit 1.
- FIG. 4A shows a change in the write error rate of the magnetic memory of Example 1 when the applied voltage value of the write pulse is changed.
- the critical write voltage V 0 was 0.04842V, and the write error rate became 10 ⁇ 7 when 0.04890V was applied.
- the voltage at which the write error rate is 10 ⁇ 7 or less is set as the lower limit voltage V 1 .
- the lower limit voltage V 1 was 1.01 times the critical write voltage V 0 .
- FIG. 4B shows a change in the write error rate of the magnetic memory of Example 1 when the applied voltage value of the write pulse is changed.
- the applied voltage exceeds a predetermined value, the write error rate increases.
- the upper limit voltage V 2 When the voltage at which the write error rate is 10 ⁇ 7 or more is defined as the upper limit voltage V 2 , the upper limit voltage V 2 is 0.08038V. This upper limit voltage V 2 was 1.66 times the critical write voltage V 0 .
- the graph shown in FIG. 4A can be fitted by the following relational expression (1).
- P 1 is an anti-equilibrium state (data “1”) to an equilibrium state (data “0”) or an equilibrium state (data “0”) to an anti-equilibrium state (data “1”).
- Tp is the applied pulse time
- t 0 is the time required for the theoretical magnetization reversal
- ⁇ P (AP) is a value indicating thermal stability
- V 0 is the critical Write voltage.
- ⁇ P (AP) is obtained by KV / k B T (K is uniaxial magnetic anisotropy, V is volume, k B is Boltzmann constant, and T is absolute temperature).
- the graph shown in FIG. 4B can be fitted by the following relational expression (2).
- P 2 is an anti-equilibrium state (data “1”) or an equilibrium state (data “0”), and is in an unstable state (data “0”). a probability of transition to .5 ")
- t p is the applied pulse time
- t 0 is the time required to theoretically magnetization reversal, it is generally 1 nsec.
- ⁇ P (AP) is a value indicating thermal stability
- V 0 ′ is a limit writing voltage.
- ⁇ P (AP) is obtained by KV / k B T (K is uniaxial magnetic anisotropy, V is volume, k B is Boltzmann constant, and T is absolute temperature).
- the limit write voltage V 0 ′ is a voltage when the write error rate reaches 10 ⁇ 3 from the state where data can be stably written.
- Example 2 The second embodiment is different from the first embodiment in that the environmental temperature to which the magnetic memory is exposed is set to ⁇ 40 ° C. Other conditions were the same as in Example 1.
- the resistivity of the spin orbit torque wiring 2 was 53.8 ⁇ cm at 20 ° C., but became 40 ⁇ cm.
- the critical write voltage V 0 at ⁇ 40 ° C. of the magnetic memory in Example 2 was 0.04554V, the lower limit voltage V 1 was 0.04600V, and the upper limit voltage V 2 was 0.07457V. That is, the lower limit voltage V 1 was 0.95 times the critical write voltage V 0 at 20 ° C., and the upper limit voltage V 2 was 1.54 times the critical write voltage V 0 at 20 ° C.
- Example 3 The third embodiment is different from the first embodiment in that the environmental temperature to which the magnetic memory is exposed is set to 100 ° C. Other conditions were the same as in Example 1.
- the resistivity of the spin orbit torque wiring 2 was 53.8 ⁇ cm at 20 ° C., but became 73 ⁇ cm.
- the critical write voltage V 0 at 100 ° C. of the magnetic memory in Example 3 was 0.05178V, the lower limit voltage V 1 was 0.05229V, and the upper limit voltage V 2 was 0.08522V. That is, the lower limit voltage V 1 was 1.08 times the critical write voltage V 0 at 20 ° C., and the upper limit voltage V 2 was 1.76 times the critical write voltage V 0 at 20 ° C.
- Example 4 The fourth embodiment is different from the first embodiment in that the environmental temperature to which the magnetic memory is exposed is set to 0 ° C. Other conditions were the same as in Example 1.
- the critical writing voltage V 0 at 0 ° C. was estimated from the results of ⁇ 40 ° C. and 20 ° C., and was 0.04746V.
- Lower limit voltage V 1 of the magnetic memory in Embodiment 4 is 0.04794V
- the upper limit voltage V 2 was 0.07844V. That is, the lower limit voltage V 1 was 0.99 times the critical write voltage V 0 at 20 ° C., and the upper limit voltage V 2 was 1.62 times the critical write voltage V 0 at 20 ° C. This value satisfies the relational expression when the spin orbit torque wiring 2 is tungsten. Also an estimated been critical write voltage, that upper limit voltage V 2 is within the predetermined range, it was confirmed that data can be written stably.
- Example 5 The fifth embodiment is different from the first embodiment in that the environmental temperature to which the magnetic memory is exposed is 50 ° C. Other conditions were the same as in Example 1.
- the critical writing voltage V 0 at 50 ° C. was estimated from the results at 20 ° C. and the results at 100 ° C., and was 0.04968V.
- Lower limit voltage V 1 of the magnetic memory according to the fifth embodiment is 0.05018V
- the upper limit voltage V 2 was 0.08219V. That is, the lower limit voltage V 1 was 1.04 times the critical write voltage V 0 at 20 ° C., and the upper limit voltage V 2 was 1.70 times the critical write voltage V 0 at 20 ° C. This value satisfies the relational expression when the spin orbit torque wiring 2 is tungsten. Also an estimated been critical write voltage, that upper limit voltage V 2 is within the predetermined range, it was confirmed that data can be written stably.
- Example 6 is different from Example 1 in that the material constituting the spin orbit torque wiring 2 is changed from tungsten (W) to tantalum (Ta). Other conditions were the same as in Example 1.
- FIG. 5A and 5B show changes in the write error rate of the magnetic memory of Example 6 when the applied voltage value of the write pulse is changed.
- the graph shown in FIG. 5A could be fitted with the above relational expression (1), and the graph shown in FIG. 5B could be fitted with the above relational expression (2).
- the critical writing voltage V 0 was 0.1423V
- the lower limit voltage V 1 was 0.1438V
- the lower limit voltage V 1 was 1.01 times the critical write voltage V 0 .
- Upper limit voltage V 2 was 0.2349V.
- Upper limit voltage V 2 was 1.65 times the critical write voltage V 0.
- Example 7 The seventh embodiment is different from the sixth embodiment in that the environmental temperature to which the magnetic memory is exposed is set to -40 ° C. Other conditions were the same as in Example 6.
- the resistivity of the spin orbit torque wiring 2 was 131.8 ⁇ cm at 20 ° C., but was 102 ⁇ cm.
- the critical write voltage V 0 at ⁇ 40 ° C. of the magnetic memory in Example 7 was 0.1395 V, the lower limit voltage V 1 was 0.1409 V, and the upper limit voltage V 2 was 0.2278 V. That is, the lower limit voltage V 1 was 0.99 times the critical write voltage V 0 at 20 ° C., and the upper limit voltage V 2 was 1.60 times the critical write voltage V 0 at 20 ° C.
- Example 8 The eighth embodiment is different from the sixth embodiment in that the environmental temperature to which the magnetic memory is exposed is set to 100 ° C. Other conditions were the same as in Example 6.
- the resistivity of the spin orbit torque wiring 2 was 131.8 ⁇ cm at 20 ° C., but was 167 ⁇ cm.
- the critical write voltage V 0 at 100 ° C. of the magnetic memory in Example 8 was 0.1423 V
- the lower limit voltage V 1 was 0.1438 V
- the upper limit voltage V 2 was 0.2349 V. That is, the lower limit voltage V 1 was 1.01 times the critical write voltage V 0 at 20 ° C.
- the upper limit voltage V 2 was 1.65 times the critical write voltage V 0 at 20 ° C.
- Example 9 is different from Example 1 in that the material constituting the spin orbit torque wiring 2 is changed from tungsten (W) to iridium (Ir). Other conditions were the same as in Example 1.
- FIG. 6A and 6B show changes in the write error rate of the magnetic memory of Example 9 when the applied voltage value of the write pulse is changed.
- the graph shown in FIG. 6A could be fitted with the above relational expression (1), and the graph shown in FIG. 6B could be fitted with the above relational expression (2).
- the critical writing voltage V 0 was 0.04036V
- the lower limit voltage V 1 was 0.04076V.
- the lower limit voltage V 1 was 1.06 times the critical write voltage V 0 .
- Upper limit voltage V 2 was 0.06982V.
- Upper limit voltage V 2 was 1.72 times the critical write voltage V 0.
- Example 10 The tenth embodiment differs from the ninth embodiment in that the ambient temperature to which the magnetic memory is exposed is set to -40 ° C. Other conditions were the same as in Example 9.
- the resistivity of the spin orbit torque wiring 2 was 47.2 ⁇ cm at 20 ° C. to 39 ⁇ cm.
- the critical write voltage V 0 at ⁇ 40 ° C. of the magnetic memory in Example 10 was 0.04036 V, the lower limit voltage V 1 was 0.04237 V, and the upper limit voltage V 2 was 0.06901 V. That is, the lower limit voltage V 1 was 1.05 times the critical write voltage V 0 at 20 ° C., and the upper limit voltage V 2 was 1.71 times the critical write voltage V 0 at 20 ° C.
- Example 11 differs from Example 9 in that the ambient temperature to which the magnetic memory is exposed is set to 100 ° C. Other conditions were the same as in Example 9.
- the resistivity of the spin orbit torque wiring 2 was 47.2 ⁇ cm at 20 ° C., but became 68 ⁇ cm.
- the critical write voltage V 0 at 100 ° C. of the magnetic memory in Example 11 was 0.04595V, the lower limit voltage V 1 was 0.04641V, and the upper limit voltage V 2 was 0.075547V. That is, the lower limit voltage V 1 was 1.15 times the critical write voltage V 0 at 20 ° C., and the upper limit voltage V 2 was 1.87 times the critical write voltage V 0 at 20 ° C.
- Example 12 differs from Example 1 in that the material constituting the spin orbit torque wiring 2 is changed from tungsten (W) to platinum (Pt). Other conditions were the same as in Example 1.
- FIG. 7A and 7B show changes in the write error rate of the magnetic memory of Example 12 when the applied voltage value of the write pulse is changed.
- the graph shown in FIG. 7A could be fitted with the above relational expression (1), and the graph shown in FIG. 7B could be fitted with the above relational expression (2).
- the critical writing voltage V 0 was 0.1046V
- the lower limit voltage V 1 was 0.1057V.
- the lower limit voltage V 1 was 1.01 times the critical write voltage V 0 .
- Upper limit voltage V 2 was 0.1726V.
- Upper limit voltage V 2 was 1.65 times the critical write voltage V 0.
- Example 13 differs from Example 12 in that the ambient temperature to which the magnetic memory is exposed is set to ⁇ 40 ° C. Other conditions were the same as in Example 13.
- the resistivity of the spin orbit torque wiring 2 was 105.7 ⁇ cm at 20 ° C. and now 82 ⁇ cm.
- the critical write voltage V 0 at ⁇ 40 ° C. of the magnetic memory in Example 13 was 0.1025 V
- the lower limit voltage V 1 was 0.1036 V
- the upper limit voltage V 2 was 0.1674 V. That is, the lower limit voltage V 1 was 1.0 times the critical write voltage V 0 at 20 ° C., and the upper limit voltage V 2 was 1.60 times the critical write voltage V 0 at 20 ° C.
- Example 14 differs from Example 12 in that the environmental temperature to which the magnetic memory is exposed is 100 ° C. Other conditions were the same as in Example 12.
- the resistivity of the spin orbit torque wiring 2 was 105.7 ⁇ cm, which was 105.7 ⁇ cm at 20 ° C.
- the critical write voltage V 0 at 100 ° C. of the magnetic memory in Example 14 was 0.1067V
- the lower limit voltage V 1 was 0.1078V
- the upper limit voltage V 2 was 0.1747V. That is, the lower limit voltage V 1 was 1.03 times the critical write voltage V 0 at 20 ° C.
- the upper limit voltage V 2 was 1.67 times the critical write voltage V 0 at 20 ° C.
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
図1は、本実施形態にかかる磁気メモリ100の模式図である。磁気メモリ100は、スピン軌道トルク型磁気抵抗効果素子10と電圧源20とを備える。
スピン軌道トルク型磁気抵抗効果素子10は、機能部1とスピン軌道トルク配線2とを備える。スピン軌道トルク配線2の機能部1を挟む位置には、導電性を有する第1電極3及び第2電極4を備える。第1電極3及び第2電極4は、スピン軌道トルク配線2に直接接続されていてもよいし、絶縁層を介して接続されてもよい。これらがスピン軌道トルク配線2と直接接続された場合は電流駆動となり、これらがスピン軌道トルク配線2と絶縁体を介して接続された場合は電圧駆動となる。
以下、スピン軌道トルク配線2が延在する第1の方向をx方向、機能部1の積層方向(第2の方向)をz方向、x方向及びz方向のいずれにも直交する方向をy方向と規定して説明する。
[スピン軌道トルク配線]
スピン軌道トルク配線2は、x方向に延在する。スピン軌道トルク配線2は、機能部1のz方向の一面に接続されている。スピン軌道トルク配線2は、機能部1に直接接続されていてもよいし、他の層を介し接続されていてもよい。
機能部1は、第1強磁性層1Aと第2強磁性層1Bとこれらに挟まれた非磁性層1Cとを備える。機能部1は、スピン軌道トルク配線2と交差する第2の方向(z方向)に積層されている。
電圧源20は、スピン軌道トルク配線2に接続され、スピン軌道トルク配線2のx方向に電圧を印加する。電圧源20は、スピン軌道トルク配線2のx方向に電圧を印加できれば、スピン軌道トルク配線2と直接接続されてもよいし、間接的に接続されていてもよい。
図3は、本実施形態にかかる磁気メモリの別の例の断面模式図である。図3に示すように、磁気メモリ101は温度計30を備えてもよい。温度計30は、スピン軌道トルク配線2の抵抗値からスピン軌道トルク配線2の温度を換算する。換算された温度は、電圧制御部40に送られる。電圧制御部40は、温度をもとに電圧源20がスピン軌道トルク配線2に印加する電圧を決定する。
本実施形態にかかるデータの書き込み方法は、上述のスピン軌道トルク型磁気抵抗効果素子10のスピン軌道トルク配線2のx方向に印加する書き込み電圧を制御する。
図1に示すスピン軌道トルク型磁気抵抗効果素子10を作製した。熱酸化Si基板上にタングステン(W)を3nm積層した。そしてこのタングステンからなる層を幅50nm、長さ300nmに加工し、スピン軌道トルク配線2とした。そしてその周囲を、酸化シリコンからなる絶縁膜で被覆した。
実施例2では、磁気メモリが曝される環境温度を-40℃にした点が実施例1と異なる。その他の条件は、実施例1と同様とした。スピン軌道トルク配線2の抵抗率は、20℃で53.8μΩcmであったものが、40μΩcmとなった。
実施例3では、磁気メモリが曝される環境温度を100℃にした点が実施例1と異なる。その他の条件は、実施例1と同様とした。スピン軌道トルク配線2の抵抗率は、20℃で53.8μΩcmであったものが、73μΩcmとなった。
実施例4では、磁気メモリが曝される環境温度を0℃にした点が実施例1と異なる。その他の条件は、実施例1と同様とした。0℃における臨界書き込み電圧V0は、-40℃の結果と20℃の結果から概算し、0.04746Vであった。
実施例5では、磁気メモリが曝される環境温度を50℃にした点が実施例1と異なる。その他の条件は、実施例1と同様とした。50℃における臨界書き込み電圧V0は、20℃の結果と100℃の結果から概算し、0.04968Vであった。
実施例6は、スピン軌道トルク配線2を構成する材料をタングステン(W)からタンタル(Ta)に変えた点が実施例1と異なる。その他の条件は、実施例1と同様とした。
実施例7では、磁気メモリが曝される環境温度を-40℃にした点が実施例6と異なる。その他の条件は、実施例6と同様とした。スピン軌道トルク配線2の抵抗率は、20℃で131.8μΩcmであったものが、102μΩcmとなった。
実施例8では、磁気メモリが曝される環境温度を100℃にした点が実施例6と異なる。その他の条件は、実施例6と同様とした。スピン軌道トルク配線2の抵抗率は、20℃で131.8μΩcmであったものが、167μΩcmとなった。
実施例9は、スピン軌道トルク配線2を構成する材料をタングステン(W)からイリジウム(Ir)に変えた点が実施例1と異なる。その他の条件は、実施例1と同様とした。
実施例10では、磁気メモリが曝される環境温度を-40℃にした点が実施例9と異なる。その他の条件は、実施例9と同様とした。スピン軌道トルク配線2の抵抗率は、20℃で47.2μΩcmであったものが、39μΩcmとなった。
実施例11では、磁気メモリが曝される環境温度を100℃にした点が実施例9と異なる。その他の条件は、実施例9と同様とした。スピン軌道トルク配線2の抵抗率は、20℃で47.2μΩcmであったものが、68μΩcmとなった。
実施例12は、スピン軌道トルク配線2を構成する材料をタングステン(W)からプラチナ(Pt)に変えた点が実施例1と異なる。その他の条件は、実施例1と同様とした。
実施例13では、磁気メモリが曝される環境温度を-40℃にした点が実施例12と異なる。その他の条件は、実施例13と同様とした。スピン軌道トルク配線2の抵抗率は、20℃で105.7μΩcmであったものが、82μΩcmとなった。
実施例14では、磁気メモリが曝される環境温度を100℃にした点が実施例12と異なる。その他の条件は、実施例12と同様とした。スピン軌道トルク配線2の抵抗率は、20℃で105.7μΩcmであったものが、136.0μΩcmとなった。
1A 第1強磁性層
1B 第2強磁性層
1C 非磁性層
2 スピン軌道トルク配線
3 第1電極
4 第2電極
10 スピン軌道トルク型磁気抵抗効果素子
20 電圧源
30 温度計
40 電圧制御部
100、101 磁気メモリ
Claims (10)
- 第1の方向に延在するスピン軌道トルク配線と、前記スピン軌道トルク配線の一面に積層され、前記スピン軌道トルク配線側から第1強磁性層と非磁性層と第2強磁性層とを備える機能部と、を備えるスピン軌道トルク型磁気抵抗効果素子において、
前記スピン軌道トルク配線の前記第1の方向に印加する電圧を、環境温度における臨界書き込み電圧以上所定値以下とし、
前記所定値は、
環境温度が-40℃、20℃及び100℃においては、前記第1強磁性層の磁化を反転させる際の書き込みエラーレートが、前記臨界書き込み電圧をかけた際の書き込みエラーレートと等しくなる限界書き込み電圧であり、
環境温度が20℃未満の温度領域においては、-40℃における限界書き込み電圧と20℃における限界書き込み電圧とを結ぶ直線上に位置する電圧であり、
環境温度が20℃以上の温度領域においては、20℃における限界書き込み電圧と100℃における限界書き込み電圧とを結ぶ直線上に位置する電圧である、データの書き込み方法。 - 環境温度が20℃以上の温度領域の場合は、前記スピン軌道トルク配線の前記第1の方向に、20℃における臨界書き込み電圧の1.01倍以上の電圧をデータ書き込み時に印加し、
環境温度が20℃未満の温度領域の場合は、前記スピン軌道トルク配線の前記第1の方向に、20℃における臨界書き込み電圧の1.05倍以上の電圧をデータ書き込み時に印加する、請求項1に記載のデータの書き込み方法。 - 環境温度が20℃以上の場合は、前記スピン軌道トルク配線の前記第1の方向に、前記環境温度における臨界書き込み電圧以上20℃における臨界書き込み電圧の1.65倍以下の電圧をデータ書き込み時に印加し、
環境温度が20℃未満の場合は、前記スピン軌道トルク配線の前記第1の方向に、前記環境温度における臨界書き込み電圧以上20℃における臨界書き込み電圧の1.54倍以下の電圧をデータ書き込み時に印加する、請求項1または2に記載のデータの書き込み方法。 - -40℃以上100℃以下の温度領域においてデータを書き込む際に、前記スピン軌道トルク配線の前記第1の方向に、臨界書き込み電圧の1.2倍以上1.54倍以下の電圧を印加する、請求項1~3のいずれか一項に記載のデータの書き込み方法。
- 前記スピン軌道トルク配線がタングステンであり、
前記所定値Vは、20℃における前記臨界書き込み電圧をV0、環境温度をt(℃)とした場合に、
環境温度が20℃未満の温度領域においては、
V=(2.0×10-3×t+1.62)×Voを満たし、
環境温度が20℃以上の温度領域においては、
V=(1.3×10-3×t+1.635)×Voを満たす、請求項1に記載のデータの書き込み方法。 - 前記スピン軌道トルク配線がタンタルであり、
前記所定値Vは、20℃における前記臨界書き込み電圧をV0、環境温度をt(℃)とした場合に、
環境温度が20℃未満の温度領域においては、
V=(0.8×10-3×t+1.63)×Voを満たし、
環境温度が20℃以上の温度領域においては、
V=1.65×Voを満たす、請求項1に記載のデータの書き込み方法。 - 前記スピン軌道トルク配線がイリジウムであり、
前記所定値Vは、20℃における前記臨界書き込み電圧をV0、環境温度をt(℃)とした場合に、
環境温度が20℃未満の温度領域においては、
V=(0.2×10-3×t+1.7167)×Voを満たし、
環境温度が20℃以上の温度領域においては、
V=(1.9×10-3×t+1.6825)×Voを満たす、請求項1に記載のデータの書き込み方法。 - 前記スピン軌道トルク配線がプラチナであり、
前記所定値Vは、20℃における前記臨界書き込み電圧をV0、環境温度をt(℃)とした場合に、
環境温度が20℃未満の温度領域においては、
V=(0.8×10-3×t+1.6333)×Voを満たし、
環境温度が20℃以上の温度領域においては、
V=(0.3×10-3×t+1.645)×Voを満たす、請求項1に記載のデータの書き込み方法。 - 第1の方向に延在するスピン軌道トルク配線と、
前記スピン軌道トルク配線の一面に積層され、前記スピン軌道トルク配線側から第1強磁性層と非磁性層と第2強磁性層とを備える機能部と、
前記スピン軌道トルク配線に接続され、前記第1の方向に環境温度における臨界書き込み電圧以上所定値以下の電圧を印加できる電圧源と、備え、
前記所定値は、
環境温度が-40℃、20℃及び100℃の場合は、前記第1強磁性層の磁化を反転させる際の書き込みエラーレートが、前記臨界書き込み電圧をかけた際の書き込みエラーレートと等しくなる限界書き込み電圧であり、
環境温度が20℃未満の温度領域においては、-40℃における限界書き込み電圧と20℃における限界書き込み電圧とを結ぶ直線上に位置する電圧であり、
環境温度が20℃以上の温度領域においては、20℃における限界書き込み電圧と100℃における限界書き込み電圧とを結ぶ直線上に位置する電圧である、磁気メモリ。 - 前記スピン軌道トルク配線に接続され、前記スピン軌道トルク配線の抵抗値から前記スピン軌道トルク配線の温度を換算する温度計をさらに備える、請求項9に記載の磁気メモリ。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP22197431.4A EP4131271A1 (en) | 2018-02-01 | 2018-02-01 | Data writing method and magnetic memory |
US16/068,523 US10438641B2 (en) | 2018-02-01 | 2018-02-01 | Data writing method and magnetic memory |
JP2018531684A JP6462960B1 (ja) | 2018-02-01 | 2018-02-01 | データの書き込み方法及び磁気メモリ |
PCT/JP2018/003435 WO2019150528A1 (ja) | 2018-02-01 | 2018-02-01 | データの書き込み方法及び磁気メモリ |
CN201880000891.7A CN110476211B (zh) | 2018-02-01 | 2018-02-01 | 数据的写入方法及磁存储器 |
CN202311091101.XA CN117059145A (zh) | 2018-02-01 | 2018-02-01 | 数据的写入方法及磁存储器 |
EP18735174.7A EP3547317B1 (en) | 2018-02-01 | 2018-02-01 | Method for writing data and magnetic memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2018/003435 WO2019150528A1 (ja) | 2018-02-01 | 2018-02-01 | データの書き込み方法及び磁気メモリ |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2019150528A1 true WO2019150528A1 (ja) | 2019-08-08 |
Family
ID=65229051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2018/003435 WO2019150528A1 (ja) | 2018-02-01 | 2018-02-01 | データの書き込み方法及び磁気メモリ |
Country Status (5)
Country | Link |
---|---|
US (1) | US10438641B2 (ja) |
EP (2) | EP4131271A1 (ja) |
JP (1) | JP6462960B1 (ja) |
CN (2) | CN110476211B (ja) |
WO (1) | WO2019150528A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021057357A (ja) * | 2019-09-26 | 2021-04-08 | 国立大学法人東京工業大学 | 磁気抵抗メモリ |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11004465B2 (en) * | 2016-06-24 | 2021-05-11 | National Institute For Materials Science | Magneto-resistance element in which I-III-VI2 compound semiconductor is used, method for manufacturing said magneto-resistance element, and magnetic storage device and spin transistor in which said magneto-resistance element is used |
EP4131271A1 (en) * | 2018-02-01 | 2023-02-08 | TDK Corporation | Data writing method and magnetic memory |
US10763430B2 (en) * | 2018-02-28 | 2020-09-01 | Tdk Corporation | Method for stabilizing spin element and method for manufacturing spin element |
US11793001B2 (en) | 2021-08-13 | 2023-10-17 | International Business Machines Corporation | Spin-orbit-torque magnetoresistive random-access memory |
US12020736B2 (en) | 2021-08-13 | 2024-06-25 | International Business Machines Corporation | Spin-orbit-torque magnetoresistive random-access memory array |
US11915734B2 (en) | 2021-08-13 | 2024-02-27 | International Business Machines Corporation | Spin-orbit-torque magnetoresistive random-access memory with integrated diode |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014045196A (ja) * | 2012-08-26 | 2014-03-13 | Samsung Electronics Co Ltd | スイッチングに基づいたスピン軌道相互作用を使用する磁気トンネルリング接合と、磁気トンネルリング接合を利用するメモリを提供するための方法及びシステム |
JP6271654B1 (ja) * | 2016-08-05 | 2018-01-31 | 株式会社東芝 | 不揮発性メモリ |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2963153B1 (fr) | 2010-07-26 | 2013-04-26 | Centre Nat Rech Scient | Element magnetique inscriptible |
US9105832B2 (en) | 2011-08-18 | 2015-08-11 | Cornell University | Spin hall effect magnetic apparatus, method and applications |
JP5987302B2 (ja) * | 2011-11-30 | 2016-09-07 | ソニー株式会社 | 記憶素子、記憶装置 |
US9378792B2 (en) * | 2011-12-15 | 2016-06-28 | Everspin Technologies, Inc. | Method of writing to a spin torque magnetic random access memory |
JP5486048B2 (ja) * | 2012-06-26 | 2014-05-07 | 株式会社日立製作所 | 磁気メモリセル及びランダムアクセスメモリ |
US9088243B2 (en) * | 2012-09-10 | 2015-07-21 | Indian Institute Of Technology Bombay | Magnetic field feedback based spintronic oscillator |
US9711215B2 (en) * | 2013-09-27 | 2017-07-18 | Intel Corporation | Apparatus and method to optimize STT-MRAM size and write error rate |
US10008248B2 (en) * | 2014-07-17 | 2018-06-26 | Cornell University | Circuits and devices based on enhanced spin hall effect for efficient spin transfer torque |
US9941468B2 (en) | 2014-08-08 | 2018-04-10 | Tohoku University | Magnetoresistance effect element and magnetic memory device |
KR102238647B1 (ko) * | 2014-10-01 | 2021-04-09 | 삼성전자주식회사 | 저항성 메모리 장치, 저항성 메모리 시스템 및 저항성 메모리 장치의 동작방법 |
US20170126249A1 (en) * | 2015-10-30 | 2017-05-04 | Intel Corporation | Temperature dependent multiple mode error correction |
EP4131271A1 (en) * | 2018-02-01 | 2023-02-08 | TDK Corporation | Data writing method and magnetic memory |
-
2018
- 2018-02-01 EP EP22197431.4A patent/EP4131271A1/en active Pending
- 2018-02-01 EP EP18735174.7A patent/EP3547317B1/en active Active
- 2018-02-01 WO PCT/JP2018/003435 patent/WO2019150528A1/ja active Application Filing
- 2018-02-01 CN CN201880000891.7A patent/CN110476211B/zh active Active
- 2018-02-01 US US16/068,523 patent/US10438641B2/en active Active
- 2018-02-01 CN CN202311091101.XA patent/CN117059145A/zh active Pending
- 2018-02-01 JP JP2018531684A patent/JP6462960B1/ja active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014045196A (ja) * | 2012-08-26 | 2014-03-13 | Samsung Electronics Co Ltd | スイッチングに基づいたスピン軌道相互作用を使用する磁気トンネルリング接合と、磁気トンネルリング接合を利用するメモリを提供するための方法及びシステム |
JP6271654B1 (ja) * | 2016-08-05 | 2018-01-31 | 株式会社東芝 | 不揮発性メモリ |
Non-Patent Citations (1)
Title |
---|
S. FUKAMI; T. ANEKAWA; C. ZHANG; H. OHNO, NATURE NANO TEC, vol. 29, 2016 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021057357A (ja) * | 2019-09-26 | 2021-04-08 | 国立大学法人東京工業大学 | 磁気抵抗メモリ |
Also Published As
Publication number | Publication date |
---|---|
EP4131271A1 (en) | 2023-02-08 |
CN117059145A (zh) | 2023-11-14 |
CN110476211A (zh) | 2019-11-19 |
JPWO2019150528A1 (ja) | 2020-02-06 |
US20190237119A1 (en) | 2019-08-01 |
JP6462960B1 (ja) | 2019-01-30 |
EP3547317A4 (en) | 2019-12-25 |
EP3547317B1 (en) | 2022-11-02 |
CN110476211B (zh) | 2023-09-15 |
EP3547317A1 (en) | 2019-10-02 |
US10438641B2 (en) | 2019-10-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6462960B1 (ja) | データの書き込み方法及び磁気メモリ | |
CN110392931B (zh) | 自旋轨道转矩型磁化旋转元件、自旋轨道转矩型磁阻效应元件及磁存储器 | |
JP7151648B2 (ja) | スピン素子及び磁気メモリ | |
JP6644274B2 (ja) | スピン素子及び磁気メモリ | |
JP6424999B1 (ja) | スピン素子の安定化方法及びスピン素子の製造方法 | |
JP6428988B1 (ja) | スピン素子の安定化方法及びスピン素子の製造方法 | |
JP6610847B1 (ja) | スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子及び磁気メモリ | |
JP6462191B1 (ja) | データの書き込み方法、検査方法、スピン素子の製造方法及び磁気抵抗効果素子 | |
JP2019047120A (ja) | スピン流磁化反転素子、スピン軌道トルク型磁気抵抗効果素子、磁気メモリ及び高周波磁気素子 | |
WO2019163203A1 (ja) | スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子及び磁気メモリ | |
JPWO2019031226A1 (ja) | スピン流磁気抵抗効果素子及び磁気メモリ | |
JP6485588B1 (ja) | データの書き込み方法 | |
JP2021125551A (ja) | 磁気抵抗効果素子 | |
CN115700065A (zh) | 磁化旋转元件、磁阻效应元件和磁存储器 | |
JP2020188138A (ja) | 記憶素子、半導体装置及び磁気記録アレイ | |
JPWO2019163203A1 (ja) | スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子及び磁気メモリ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ENP | Entry into the national phase |
Ref document number: 2018531684 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2018735174 Country of ref document: EP |
|
ENP | Entry into the national phase |
Ref document number: 2018735174 Country of ref document: EP Effective date: 20180725 |
|
ENP | Entry into the national phase |
Ref document number: 2018735174 Country of ref document: EP Effective date: 20180725 |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 18735174 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |