WO2019144335A1 - 一种异质结光伏电池及其制备方法 - Google Patents
一种异质结光伏电池及其制备方法 Download PDFInfo
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- WO2019144335A1 WO2019144335A1 PCT/CN2018/074082 CN2018074082W WO2019144335A1 WO 2019144335 A1 WO2019144335 A1 WO 2019144335A1 CN 2018074082 W CN2018074082 W CN 2018074082W WO 2019144335 A1 WO2019144335 A1 WO 2019144335A1
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- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 120
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 120
- 239000010703 silicon Substances 0.000 claims abstract description 120
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 63
- 239000011259 mixed solution Substances 0.000 claims abstract description 46
- 239000002105 nanoparticle Substances 0.000 claims abstract description 37
- MHWZQNGIEIYAQJ-UHFFFAOYSA-N molybdenum diselenide Chemical compound [Se]=[Mo]=[Se] MHWZQNGIEIYAQJ-UHFFFAOYSA-N 0.000 claims abstract description 35
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 27
- 238000004528 spin coating Methods 0.000 claims abstract description 22
- 229920000144 PEDOT:PSS Polymers 0.000 claims abstract description 21
- JPUHCPXFQIXLMW-UHFFFAOYSA-N aluminium triethoxide Chemical compound CCO[Al](OCC)OCC JPUHCPXFQIXLMW-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 18
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052709 silver Inorganic materials 0.000 claims abstract description 17
- 239000004332 silver Substances 0.000 claims abstract description 17
- 239000002070 nanowire Substances 0.000 claims abstract description 9
- 238000004140 cleaning Methods 0.000 claims abstract description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 50
- 239000000243 solution Substances 0.000 claims description 31
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 30
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 30
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 30
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 28
- 229910052737 gold Inorganic materials 0.000 claims description 28
- 239000010931 gold Substances 0.000 claims description 28
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 27
- 239000008367 deionised water Substances 0.000 claims description 25
- 229910021641 deionized water Inorganic materials 0.000 claims description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 25
- 229910001961 silver nitrate Inorganic materials 0.000 claims description 15
- 238000000137 annealing Methods 0.000 claims description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 10
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 10
- 238000002207 thermal evaporation Methods 0.000 claims description 10
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 claims description 2
- 229910001950 potassium oxide Inorganic materials 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract description 6
- 238000002161 passivation Methods 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 4
- 238000001035 drying Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- -1 aluminum triethanol aluminum Chemical compound 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000011987 methylation Effects 0.000 description 2
- 238000007069 methylation reaction Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002343 gold Chemical class 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/87—Light-trapping means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
- H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Definitions
- the invention relates to the field of photoelectric conversion technology, in particular to a heterojunction photovoltaic cell and a preparation method thereof.
- solar cells can be divided into three major categories: the first generation of solar cells specifically include monocrystalline silicon solar energy. Silicon solar cells such as batteries, polycrystalline silicon solar cells, and amorphous silicon solar cells; second-generation solar cells include amorphous silicon thin film solar cells, gallium arsenide solar solar cells, cadmium telluride solar cells, and copper indium gallium selenide solar cells. Thin film solar cells; third generation solar cells specifically include dye-sensitized solar cells, nanocrystalline solar cells. New solar cells such as organic solar cells, organic-inorganic hybrid solar cells, and perovskite solar cells.
- the defect state on the surface of the silicon substrate causes electron-hole recombination, thereby greatly reducing the photoelectric conversion efficiency of the organic-inorganic solar cell.
- Methylation is used to form Si-CH3 bonds on the surface of the silicon wafer to passivate the silicon surface.
- the methylated silicon wafer still has a large number of defect states, and on the other hand, the methylation process is more complicated and The basic processing time is long and it is impossible to perform large-scale applications. Therefore, in view of the above technical problems, it is necessary to improve the passivation mode of the surface of the silicon wafer to improve the photoelectric conversion efficiency of the organic-inorganic solar cell.
- a method for preparing a heterojunction photovoltaic cell comprises the following steps: (1) cleaning of n-type silicon wafer: ultrasonic cleaning of n-type silicon wafer in acetone, ethanol and deionized water in sequence 10-15 minutes, then placed in a concentrated H 2 SO 4 /H 2 O 2 mixed solution and heated to 100-110 ° C for 50-70 minutes, then rinsed the n-type silicon wafer with deionized water, and with nitrogen Blowing dry for use; (2) preparing a gold tower structure pile layer on the upper surface of the n-type silicon wafer: the n-type silicon wafer obtained in step 1 is placed in a mixed solution of NaOH and ethanol, wherein In the mixed solution, the mass fraction of the NaOH is 4-5%, and the volume fraction of the ethanol is 12-15%.
- the etching is performed at 80-90 ° C for 40-50 minutes to obtain the gold tower structure suede layer. Then, the n-type silicon wafer is immersed in a hydrochloric acid solution for 2-3 hours, then the n-type silicon wafer is rinsed with deionized water, and then the n-type silicon wafer is immersed in a hydrofluoric acid solution for 5-10.
- n-type silicon wafer is placed in a silver nitrate / hydrofluoric acid mixed solution, wherein the molar concentration of hydrofluoric acid in the silver nitrate / hydrofluoric acid mixed solution is 4.8 mol / l, the molar concentration of silver nitrate 0.02mol/l, and etched at room temperature for 10-15 minutes, the etched n-type silicon wafer is taken out, rinsed with deionized water, and then immersed in concentrated nitric acid for 50-60 minutes, then used Washing the silicon wafer with deionized water and drying it with nitrogen for later use; (4) Passivating the n-type silicon wafer: immersing the n-type silicon wafer in the hydrofluoric acid solution for 5-10 minutes in step 2, and then a mixed solution containing potassium hydroxide and aluminum triethoxide is dropped on the
- preparation of the molybdenum selenide nanoparticle/Spiro-OMeTAD layer spin coating the upper surface of the n-type silicon wafer obtained in step 4 with a spiro-OMeTAD solution containing molybdenum selenide nanoparticles The spin coating is rotated at a speed of 2000-4000 rpm and the time is 1-5 minutes, and then annealed in a nitrogen atmosphere at a temperature of 100-110 ° C for 5-10 minutes to form the molybdenum selenide nanoparticles/ Spiro-OMeTAD layer; (6) PEDOT: preparation of PSS layer: spin-coated PEDOT:PSS solution on the surface of the molybdenum selenide nanoparticle/Spiro-OMeTAD layer; spin coating speed of 4000-5000 rpm/time and time 1-4 minutes, then annealing in a nitrogen atmosphere and at a temperature of 110-130 ° C for 20-30 minutes to
- the volume ratio of H 2 SO 4 to H 2 O 2 in the concentrated H 2 SO 4 /H 2 O 2 mixed solution is 3:1.
- the concentration of potassium hydroxide in the mixed solution containing potassium hydroxide and aluminum triethoxide is 0.2-0.5 mg/ml, and the concentration of aluminum triethanolate is 1-3 mg/ml.
- the concentration of the molybdenum selenide nanoparticles in the Spiro-OMeTAD solution containing molybdenum selenide nanoparticles is 1-2 mg/ml, and the concentration of SPIRO-OMETAD is 20-30 mg/ml.
- the PEDOT:PSS layer has a thickness of 10-20 nm.
- the front side silver gate electrode is formed by a thermal evaporation method, and the front side silver gate electrode has a thickness of 150 to 250 nm.
- the back aluminum electrode is formed by a thermal evaporation method, and the back aluminum electrode has a thickness of 200 to 300 nm.
- the invention also provides a heterojunction photovoltaic cell, which is a solar cell prepared by the above method.
- the present invention can effectively reduce the defect state of the silicon surface to passivate the silicon wafer by spin-coating the aluminum ethoxide on the surface of the silicon and annealing the aluminum ethoxide bond on the surface of the silicon.
- the surface of the silicon wafer can be micro-etched with potassium hydroxide, thereby making the aluminum triethanol aluminum fully contact with the silicon wafer.
- the invention adopts a combination of a gold tower structure suede layer and a silicon nanowire to effectively improve the efficiency of light absorption, and at the same time, the existence of a gold tower structure and a silicon nanowire on the surface of the gold tower structure increases silicon and selenization.
- the increased contact of the molybdenum nanoparticles/Spiro-OMeTAD layer is beneficial to the separation and transmission efficiency of electron-hole pairs.
- the presence of molybdenum selenide nanoparticles improves the conductivity of the Spiro-OMeTAD layer and effectively improves the hole transport efficiency.
- FIG. 1 is a schematic structural view of a heterojunction photovoltaic cell of the present invention
- FIG. 2 is a schematic view showing the structure of a gold tower in a pile layer of a gold tower structure of the present invention.
- the n-type silicon wafer obtained in the step 1 is placed in a mixed solution of NaOH and ethanol, wherein the mixed solution
- the mass fraction of NaOH is 4-5%
- the volume fraction of the ethanol is 12-15%
- it is etched at 80-90 ° C for 40-50 minutes to obtain the gold tower structure suede layer
- the silicon wafer is immersed in a hydrochloric acid solution for 2-3 hours, then the n-type silicon wafer is rinsed with deionized water, and then the n-type silicon wafer is immersed in a hydrofluoric acid solution for 5-10 minutes, and blown with nitrogen gas. Dry for use;
- the n-type silicon wafer obtained in the step 2 is placed in a silver nitrate/hydrofluoric acid mixed solution, wherein The molar concentration of hydrofluoric acid in the silver nitrate/hydrofluoric acid mixed solution is 4.8 mol/l, the molar concentration of silver nitrate is 0.02 mol/l, and etching at room temperature for 10-15 minutes, the etched said After the n-type silicon wafer is taken out, it is rinsed with deionized water, then immersed in concentrated nitric acid for 50-60 minutes, then the silicon wafer is washed with deionized water, and dried with nitrogen to stand by;
- PEDOT: PSS layer spin-coating PEDOT:PSS solution on the surface of the molybdenum selenide nanoparticle/Spiro-OMeTAD layer; spin coating speed of 4000-5000 rpm/time and time of 1-4 minutes, And then annealing in a nitrogen atmosphere at a temperature of 110-130 ° C for 20-30 minutes to form the PEDOT:PSS layer, the PEDOT:PSS layer has a thickness of 10-20 nm;
- the front side silver gate electrode is formed by thermal evaporation, the front side silver gate electrode has a thickness of 150-250 nm;
- the back surface aluminum electrode was formed by a thermal evaporation method, and the back surface aluminum electrode had a thickness of 200 to 300 nm.
- the solar cell prepared by the method according to the above method comprises a back aluminum electrode 1, a back passivation layer 2, an n-type silicon wafer 3, a gold tower structure suede layer 4, and a front surface.
- a surface passivation layer 5 a molybdenum selenide nanoparticle/Spiro-OMeTAD layer 6, a PEDOT:PSS layer 7, and a front side silver gate electrode 8, wherein the gold tower structure pile layer 4 comprises a plurality of pyramid structures 41, and The surface of each gold tower structure 41 has a plurality of silicon nanowires 42 arranged in a row.
- a method for preparing a heterojunction photovoltaic cell comprising the steps of:
- the n-type silicon wafer obtained in the step 1 is placed in a mixed solution of NaOH and ethanol, wherein the mixed solution The mass fraction of NaOH is 4.5%, the volume fraction of the ethanol is 12%, and it is etched at 90 ° C for 45 minutes to obtain the gold tower structure pile layer, and then the n-type silicon sheet is placed in a hydrochloric acid solution. Soaking for 3 hours, then rinsing the n-type silicon wafer with deionized water, then immersing the n-type silicon wafer in a hydrofluoric acid solution for 8 minutes, and drying it with nitrogen for use;
- the n-type silicon wafer obtained in the step 2 is placed in a silver nitrate/hydrofluoric acid mixed solution, wherein The molar concentration of hydrofluoric acid in the silver nitrate/hydrofluoric acid mixed solution is 4.8 mol/l, the molar concentration of silver nitrate is 0.02 mol/l, and etching at room temperature for 12 minutes, the etched n-type After the silicon wafer was taken out, it was rinsed with deionized water, and then immersed in concentrated nitric acid for 55 minutes, then the silicon wafer was washed with deionized water and dried with nitrogen for use;
- the concentration of potassium hydroxide in the mixed solution containing potassium hydroxide and aluminum triethoxide is 0.4 mg/ml, and the concentration of aluminum triethanolate is 2mg/ml;
- the concentration of molybdenum selenide nanoparticles in the solution is 1 mg / ml, the concentration of SPIRO-OMETAD is 25 mg / ml, the particle diameter of the molybdenum selenide nanoparticles is 3 nm;
- PEDOT:PSS solution was spin-coated on the surface of the molybdenum selenide nanoparticle/Spiro-OMeTAD layer; the spin coating speed was 4000 rpm and the time was 3 minutes, and then in a nitrogen atmosphere. And annealing at a temperature of 120 ° C for 25 minutes to form the PEDOT:PSS layer, the thickness of the PEDOT:PSS layer is 15 nm;
- the front side silver gate electrode is formed by thermal evaporation, the thickness of the front side silver gate electrode is 200 nm;
- the back surface aluminum electrode was formed by a thermal evaporation method, and the thickness of the back surface aluminum electrode was 220 nm.
- the solar cell had an open circuit voltage of 0.64 V, a short-circuit current of 33.5 mA/cm 2 , a fill factor of 0.74, and a photoelectric conversion efficiency of 15.9%.
- a method for preparing a heterojunction photovoltaic cell comprising the steps of:
- the n-type silicon wafer obtained in the step 1 is placed in a mixed solution of NaOH and ethanol, wherein the mixed solution The mass fraction of NaOH is 4%, the volume fraction of the ethanol is 15%, and is etched at 85 ° C for 50 minutes to obtain the gold tower structure suede layer, and then the n-type silicon wafer is placed in a hydrochloric acid solution. Soaking for 2.5 hours, then rinsing the n-type silicon wafer with deionized water, then immersing the n-type silicon wafer in a hydrofluoric acid solution for 10 minutes, and drying it with nitrogen for use;
- the n-type silicon wafer obtained in the step 2 is placed in a silver nitrate/hydrofluoric acid mixed solution, wherein The molar concentration of hydrofluoric acid in the silver nitrate/hydrofluoric acid mixed solution is 4.8 mol/l, the molar concentration of silver nitrate is 0.02 mol/l, and etching at room temperature for 10 minutes, the etched n-type After the silicon wafer was taken out, it was rinsed with deionized water, and then immersed in concentrated nitric acid for 50 minutes, then the silicon wafer was washed with deionized water and dried with nitrogen to stand by;
- the concentration of potassium hydroxide in the mixed solution containing potassium hydroxide and aluminum triethoxide is 0.2 mg/ml, and the concentration of aluminum triethanolate is 3mg/ml;
- PEDOT: PSS layer spin-coating PEDOT:PSS solution on the surface of the molybdenum selenide nanoparticle/Spiro-OMeTAD layer; spin coating speed of 5000 rpm and time of 4 minutes, then in a nitrogen atmosphere And annealing at a temperature of 130 ° C for 30 minutes to form the PEDOT:PSS layer, the PEDOT:PSS layer has a thickness of 12 nm;
- the front side silver gate electrode is formed by thermal evaporation, the thickness of the front side silver gate electrode is 150 nm;
- the back surface aluminum electrode was formed by a thermal evaporation method, and the thickness of the back surface aluminum electrode was 200 nm.
- the solar cell had an open circuit voltage of 0.61 V, a short-circuit current of 31.7 mA/cm 2 , a fill factor of 0.76, and a photoelectric conversion efficiency of 14.7%.
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Abstract
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- 一种异质结光伏电池的制备方法,其特征在于:包括以下步骤:(1)n型硅片的清洗:将n型硅片依次在丙酮、乙醇、去离子水中超声清洗10-15分钟,然后置入浓H 2SO 4/H 2O 2混合溶液中并加温至100-110℃保持50-70分钟,接着用去离子水冲洗所述n型硅片,并用氮气吹干以备用;(2)在所述n型硅片的上表面制备金子塔结构绒面层:将步骤1得到的所述n型硅片置于NaOH和乙醇的混合溶液中,其中所述混合溶液中,所述NaOH的质量分数为4-5%,所述乙醇的体积分数为12-15%在80-90℃下刻蚀40-50分钟以得到所述金子塔结构绒面层,然后将所述n型硅片置于盐酸溶液中浸泡2-3小时,接着用去离子水冲洗所述n型硅片,接着将所述n型硅片在氢氟酸溶液中浸泡5-10分钟,并用氮气吹干以备用;(3)在所述金子塔结构绒面层中的金子塔结构的表面制备硅纳米线:将步骤2得到的所述n型硅片置于硝酸银/氢氟酸混合溶液中,其中所述硝酸银/氢氟酸混合溶液中氢氟酸的摩尔浓度为4.8mol/l,硝酸银的摩尔浓度为0.02mol/l,并在室温下刻蚀10-15分钟,将刻蚀过的所述n型硅片取出后,用去离子水冲洗,然后浸入浓硝酸中保持50-60分钟,接着用去离子水清洗硅片,并用氮气吹干以备用;(4)对所述n型硅片进行钝化处理:将步骤2得到n型硅片在氢氟酸溶液中浸泡5-10分钟,接着在所述n型硅片的上表面滴加含有氢氧化钾和三乙醇铝的混合溶液并静置2-5分钟,接着在1500-2000转/分钟的条件下旋涂1-3分钟,并在300-400℃的温度下退火40-60分钟,以钝化所述n型硅片的上表面,然后在所述n型硅片的下表面滴加含有氢氧化钾和三乙醇铝的混合溶液并静置2-5分钟,接着在1500-2000转/分钟的条件下旋涂1-3分钟,并在300-400℃的温度下退火40-60分钟,以钝化所述n型硅片的下表面;(5)硒化钼纳米颗粒/Spiro-OMeTAD层的制备:在步骤4得到的n型硅片的上表面旋涂含有硒化钼纳米颗粒的Spiro-OMeTAD溶液,旋涂的转速为2000-4000转/分钟以及时间为1-5分钟,然后在氮气环境中,并在100-110℃的温度下退火5-10分钟,形成所述硒化钼纳米颗粒/Spiro-OMeTAD层;(6)PEDOT:PSS层的制备:在所述硒化钼纳米颗粒/Spiro-OMeTAD层表面旋涂PEDOT:PSS溶液;旋涂的转速为4000-5000转/分钟以及时间为1-4分钟,然后在氮气环境中,并在110-130℃的温度下退火20-30分钟,以形成所述PEDOT:PSS层;(7)正面银栅电极的制备;(8)背面铝电极的制备。
- 根据权利要求1所述的异质结光伏电池的制备方法,其特征在于:在所述步骤1中,所述浓H 2SO 4/H 2O 2混合溶液中H 2SO 4与H 2O 2体积比为3:1
- 根据权利要求1所述的异质结光伏电池的制备方法,其特征在于:在所述步骤4中,所述含有氢氧化钾和三乙醇铝的混合溶液中氢氧化钾的浓度为0.2-0.5mg/ml,三乙醇铝的浓度为1-3mg/ml。
- 根据权利要求4所述的异质结光伏电池的制备方法,其特征在于:在所述步骤5中,所述含有硒化钼纳米颗粒的Spiro-OMeTAD溶液中硒化钼纳米颗粒的浓度为1-2mg/ml,SPIRO-OMETAD的浓度为 20-30mg/ml。
- 根据权利要求1所述的异质结光伏电池的制备方法,其特征在于:所述PEDOT:PSS层的厚度为10-20nm。
- 根据权利要求1所述的异质结光伏电池的制备方法,其特征在于:在所述步骤7中通过热蒸镀法形成所述正面银栅电极,所述正面银栅电极的厚度为150-250nm。
- 根据权利要求1所述的异质结光伏电池的制备方法,其特征在于:在所述步骤8中通过热蒸镀法形成所述背面铝电极,所述背面铝电极的厚度为200-300nm。
- 一种异质结光伏电池,其特征在于,采用权利要求1-7任一项所述的方法制备形成的。
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