WO2019127025A1

WO2019127025A1 - Integrated light-emitting assembly with wide temperature range and low power consumption

Info

Publication number: WO2019127025A1
Application number: PCT/CN2017/118665
Authority: WO
Inventors: 宋小平; 徐红春; 刘成刚; 岳阳阳
Original assignee: 武汉电信器件有限公司; 武汉光迅科技股份有限公司
Priority date: 2017-12-26
Filing date: 2017-12-26
Publication date: 2019-07-04
Also published as: CN108008500A; CN108008500B

Abstract

Disclosed is an integrated light-emitting assembly with a wide temperature range and a low power consumption, comprising a thermosensitive element (3), a refrigerator TEC (8) and a tube shell (13), wherein the tube shell is provided with a pin; the refrigerator TEC is a double-layer refrigeration unit composed of a second layer cold surface (16), a second layer semiconductor refrigeration element (17), a first layer cold surface (18), a first layer semiconductor refrigeration element (19), and a refrigerator TEC hot surface (20) successively arranged from top to bottom; the thermosensitive element is fixed to the second layer cold surface of the refrigerator TEC; the first layer cold surface is provided with a heat insulator (1) respectively connected to the second layer cold surface and the pin; and the first layer semiconductor refrigeration element is connected to the second layer semiconductor refrigeration element via an electrode. Compared with existing similar device package structures, the double-layer refrigerator TEC structure has a better cooling and heating efficiency per unit area and a lower power consumption, and can also operate in a wider temperature range.

Description

Wide temperature and low power integrated light emitting component

Technical field

The invention relates to a light emitting component capable of operating at -40 ° C to 85 ° C with thermoelectric refrigeration, and is mainly used in a 100 G optical module. The invention belongs to the fields of communication and optoelectronics.

Background technique

As 4G enters the commercial stage of scale, the future fifth-generation mobile communication (5G) has become a global research and development hotspot. Starting from the main application scenarios, service requirements and challenges of the mobile Internet and the Internet of Things in the future, the main technical scenarios of 5G have four characteristics: continuous wide-area coverage, hot-spot high-capacity, low-power large connections and low latency and high reliability. The low-power and large-connection scenario is mainly for smart city, environmental monitoring, intelligent agriculture, forest fire prevention and other application scenarios targeting sensing and data acquisition. It has the characteristics of small data packet, low power consumption and massive connection. This kind of terminal has a wide distribution range and a large number of terminals. It not only requires the network to have the support capacity of over 100 billion connections, meets the requirements of the 100G connection number density index, but also ensures the ultra-low power consumption and ultra-low cost of the terminal. Under the hood, there is a large market demand for transmitting components that meet wide temperature (-40 ° C ~ 85 ° C).

Under the conditions of the prior art, the application environment of the integrated EML light emitting component is mainly -5 ° C ~ 70 ° C, as shown in Figure 1, Figure 2, can not meet the working requirements under harsh temperature conditions. The main reasons for not being able to work at wide temperature are: the passive heat load caused by the heat conduction of gold wire is too large; the multiple materials are bonded together with solder or glue, and the thermal resistance is large, resulting in limited working temperature; TEC unit The area cooling efficiency is limited, making the device unable to operate at wide temperature (-40 ° C ~ 85 ° C). In summary, the application prospect of a wide-temperature and low-power integrated light-emitting component is very broad.

Summary of the invention

The technical problem to be solved by the present invention is to overcome the deficiencies of the prior art and provide a wide temperature and low power integrated light emitting component.

A wide temperature and low power integrated light emitting component comprises a heat sensitive component, a TEC, a package, wherein the package is provided with a lead; the TEC comprises a second layer of cold noodles arranged in order from top to bottom, a two-layer semiconductor refrigeration element, a first layer cold surface, a first layer semiconductor refrigeration element, and a TEC hot surface double-layer refrigerator unit, wherein the heat sensitive element is fixed on a second layer cold surface of the TEC, the first A heat insulator is disposed on the layer cold surface, and the heat insulator is respectively connected to the second layer cold surface and the lead, and the first layer semiconductor refrigeration element is connected to the second layer semiconductor refrigeration element through the electrode.

Further comprising a collimating optical unit, a multiplexer assembly, a package, an output unit, a heat sensitive component, a backlight detector, a semiconductor laser chip, a thermistor, the backlight detector, the semiconductor laser chip, and the thermistor fixed to the TEC On the second cold surface, the emitted light of the semiconductor laser chip is transmitted to the multiplexer assembly through the optical collimation unit.

The heat insulator adopts a heat insulating block, and the heat insulating block is disposed on the cold surface of the second layer.

The backlight detector, the semiconductor laser chip, and the thermistor are fixed on the cold surface of the second layer, and one end of the cold surface of the second layer is connected to the tube shell, and the other end is connected to the transition block.

The semiconductor laser chip is mounted on a transition block, and the transition block is fixed to the cold surface of the second layer.

The insulating block uses a material having a low thermal conductivity.

The optical collimating unit is disposed on the first layer of cold surface of the TEC.

Further comprising an optical isolator, a converging optical component, a pin assembly, and a tube cover, the multiplexed optical component is fixed on the bottom of the shell, the isolator is fixed on the light window of the shell; the concentrating optical component is fixed on the shell, and the plug is inserted The needle assembly is attached to the converging optic.

The shell adopts a shell with a high-frequency transmission line structure, the shell adopts a kovar material, the bottom of the shell adopts tungsten copper, and the shell is provided with a sapphire sealing light window.

The cold surface of the second layer is made of AL2O3 or ALN, and the cold surface is provided with a design pattern.

The device of the invention has the following advantages:

1) The present invention precisely controls the operating temperature of the entire active chip and enables it to operate in a wide temperature range of -40 ° C to 85 ° C;

2) The device of the invention adopts a double-layer TEC structure, and has higher cooling and heating efficiency per unit area, lower power consumption, and can work in a wider temperature range than the existing similar device packaging structure;

3) The double-layer TEC structure of the invention reduces the metal heat sink for height control and heat conduction, reduces the assembly components of the device, and is simpler in process.

4) The passive thermal load of the structure of the entire assembly of the device of the present invention is greatly reduced compared with the conventional structure; the thermal resistance is also greatly reduced compared with the conventional structure.

5) The higher the degree of device integration, the more obvious the effect of the device of the present invention in reducing power consumption.

6) The invention adopts a transition block for heat insulation, which reduces the passive heat load caused by gold wire conduction.

DRAWINGS

1 is a partial transverse cross-sectional view showing the internal structure of an optical device with a single layer TEC and a single layer heat sink;

2 is a partial transverse cross-sectional view showing the internal structure of an optical device with a double layer TEC and a double layer heat sink;

3 is a transverse cross-sectional view showing an overall package structure of an optical device with a double layer TEC and no tungsten copper heat sink according to the present invention;

4 is a longitudinal cross-sectional view of an optical device overall package structure with a double layer TEC and no tungsten copper heat sink;

5 is a transverse cross-sectional view showing an overall package structure of an optical device with a double-layer TEC and a tungsten-copper heat sink according to the present invention;

6 is a longitudinal cross-sectional view of an optical device overall package structure with a double-layer TEC and a tungsten-copper heat sink according to the present invention;

Figure 7 is a double layer TEC structure employed in the present invention;

Figure 8 is a prior art single layer TEC structure;

among them:

1. Insulation pad; 2. Tungsten copper heat sink;

3, thermistor; 4, backlight detector;

5. Semiconductor laser chip; 6. Transition block;

7. Collimating optical unit; 8. Refrigerator;

9, multiplexer components; 10, optical isolator;

11. Converging optical components; 12. Pin assembly;

13, the shell; 14, the tube cover;

15. Metal heat sink; 16. Second layer cold surface;

17, a second layer of semiconductor refrigeration components; 18, the first layer of cold surface;

19. The first layer of semiconductor refrigeration components; 20, TEC hot surface;

Detailed ways

The package structure of the device package principle of the present invention will be described in detail below with reference to the examples and the accompanying drawings.

The apparatus of the present invention needs to include a functional unit having a core: a two-layer refrigerator temperature control unit having a temperature difference between the first layer and the second layer. The second layer of the cold surface of the refrigerator is made of alumina ceramic or aluminum nitride ceramic, directly designed on the cold surface of the upper refrigerator, placing chips and high-frequency circuits, or placing surface-mounted chips, backlight detectors and surface inclusions. ALN transition block for high frequency circuits to reduce metal heat sinks for high matching and heat conduction; add a thermal insulation pad on the cold side of the second layer cooler to reduce gold wire heat conduction bands Passive hot load; this structure reduces the metal heat sink, reduces the heat capacity and thermal resistance of the component, and reduces the passive heat load caused by the heat transfer of the gold wire. The double-layer TEC temperature control unit increases the number of crystals for thermal handling of the TEC in the effective area, resulting in a larger operating temperature difference for the component. The reduction in heat capacity and passive heat load also reduces the power consumption of the overall assembly. .

Embodiment 1: FIGS. 3, 4, 5, and 6 are cross-sectional views of an entire package of an optical device of the present invention. As shown in FIG. 3, FIG. 4, FIG. 5 and FIG. 6, the device structure of the present invention comprises a heat insulating block 1, a tungsten copper heat sink 2, a thermistor 3, a backlight detector 4, a semiconductor laser chip 5, and a transition. Block 6, collimating optical unit 7, refrigerator 8 (TEC), multiplexer assembly 9, optical isolator 10, converging optical assembly 11, pin assembly 12, tube casing 13, tube cover 14, and casing 13 means The shell of the high-frequency transmission line structure is made of kovar material, the bottom of the tube shell is tungsten copper, the transmission line structure is composed of multi-layer high-temperature co-fired ceramics, the tube shell contains sapphire sealing light window, and the tube cover 14 is thermally resisted. It is fixed to the envelope 13 to provide a sealing effect. The refrigerator 8 is a double-layered refrigerator including a double-layer refrigerator second layer cold surface 16, a second layer semiconductor refrigeration element 17, a first layer cold surface 18, a first layer semiconductor refrigeration element 19, TEC hot side 20. The refrigerator is fixed to the envelope 13 by solder or epoxy glue. The device of the present invention is designed to make the double layer TEC adaptively generate a certain temperature difference between the first layer cold surface 18 and the double layer TEC second layer cold surface 16. By adjusting the number of the second semiconductor refrigeration element 17 and the first semiconductor refrigeration element 19, the temperature difference between the second layer cold surface 16 of the TEC and the first layer cold surface 18 can be adjusted. The double layer TEC structure employed in the present invention is shown in FIG. The temperature difference is related to the number and area of the two layers of semiconductor refrigeration components of the refrigerator, and the number and area of the upper and lower layers of the semiconductor refrigeration components are changed, and the temperature difference between the first layer cold surface and the second layer cold surface can be effectively changed. The backlight detector 4, the semiconductor laser chip 5, and the thermistor 3 are fixed to the second layer cold surface 16 of the TEC 8 by solder or epoxy glue, or first fixed to the transition heat sink 2 by solder or epoxy glue, passing through Solder or epoxy glue is fixed to the second layer cold surface 16 of the TEC 8; the heat insulating block 1 is a block having a heat insulating effect, and the block is made of a material having a heat insulating effect, and the block block contains a high The frequency transmission line structure, together with the die, constitutes a high frequency circuit loop. One end of the insulating block 1 is connected to the tube casing 13 by a gold wire, and the other portion is connected to the second layer cold surface 16 of the refrigerator 8 by a gold wire or to the tungsten copper heat sink 2 on the first layer cold surface 18. The optical collimation unit 7 is placed on the first layer of cold surface 18 of the refrigerator 8; the multiplexed optical element 9 is fixed to the bottom of the envelope 13. The isolator 10 is fixed to the sealing window of the envelope 13; the converging optical element 11 is fixed to the envelope 13, and the pin assembly 12 is fixed to the converging optical element 11. The semiconductor laser chip 5 in this embodiment can also be mounted on the transition block 6, and the transition block 6 is fixed to the second layer cold surface 16.

In Fig. 4, the heat insulating block 1 is a pad of a material having a lower thermal conductivity, and the block has a high frequency circuit which is assembled to the first layer of cold surface 18 of the refrigerator 8, which has a thermal conductivity. The low material is intended to prevent heat from being conducted from the first cold face 18 of the TEC through the gold wire to the surface of the transition block 6 or to the surface of the tungsten copper heat sink 2, increasing the passive heat load. The insulating block is connected at one end to the tube by a gold wire, and the other end is connected to the second layer cold surface 16 of the TEC. In the structure, in the case of high ambient temperature, the gold wire is a good conductor of heat, and the gold wire transmits the heat on the tube shell 13 to the surface of the TEC to cause passive heat load, effectively reducing the temperature difference between the two ends of the gold wire, which is effective In the structure, the heat insulating block 1 is placed on the second cold surface of the TEC, and the temperature of the second layer is higher than that of the first layer, which effectively reduces the gold wire compared with the ordinary single layer TEC structure. The temperature difference between the two ends effectively reduces the passive thermal load of the device. This adaptive structure creates a temperature difference between the upper and lower layers of the TEC surface, and the lower layer TEC has a higher temperature than the upper layer. In this structure, the metal heat sink 15 is reduced compared with the conventional device, the thermal resistance is reduced, and the power consumption is reduced. The collimating optical unit 7 is placed on the first layer of cold surface 18 of the refrigerator 8, and the apparatus of the present invention also greatly reduces the heat capacity compared to the conventional structure, effectively reducing the efficiency of the device.

Embodiment 2:

In the embodiment of the present invention, the backlight detector 4 and the semiconductor laser chip 5 are mounted on the first layer cold surface 18 of the refrigerator 8 through a tungsten-copper heat sink 2, and the heat generated by the semiconductor laser chip 5 is directly generated by the upper layer TEC pump. Go to the lower TEC.

The present invention utilizes a double-layer TEC structure to directly place a laser chip or an ALN transition block on which a laser chip and a backlight detector are mounted on a first layer TEC. Compared with a conventional package structure, the present invention has the following advantages: By using the height difference between the first layer and the second layer TEC, the metal tungsten-copper heat sink element for height control and heat conduction is directly removed, the components of the laser component are reduced, the assembly process of the component is omitted, and the component is improved. Production efficiency, while also reducing the thermal capacity and thermal resistance of the components, greatly reducing the power consumption of the components. Secondly, the present invention utilizes a double-layer TEC package structure to mount a transition piece of other materials having thermal insulation effects on the second layer of the TEC, because the first layer and the second layer of the TEC have temperature adaptive functions, and the TEC is second. The temperature of the layer structure is higher than that of the first layer, which is connected to the tube shell by one end of the gold wire, and the other end is connected to the chip of the first layer structure of the TEC or the transition piece of the chip. The gold wire is a good conductor of heat because the temperature of the second layer of the TEC is higher than that of the first layer, compared to the conventional process, such as the single layer TEC structure of FIG. This structure greatly reduces the passive thermal load caused by the heat conduction of the gold wire, greatly reducing the overall power consumption of the component. The more integrated the device, the more obvious the effect of reducing power consumption.

The present invention has been described in detail and described with reference to the specific embodiments of the embodiments of the invention Various changes in the form and details of the device can be made in the function of the device. These changes are intended to fall within the scope of protection as claimed in the appended claims.

Claims

A wide temperature and low power integrated light emitting component, comprising: a heat sensitive component, a refrigerator (8), a package, wherein the package is provided with a lead; the refrigerator (8) comprises A second layer of cold surface (16), a second layer of semiconductor refrigeration element (17), a first layer of cold surface (18), a first layer of semiconductor refrigeration element (19), and a TEC hot side (20) arranged in order from top to bottom a double-layer refrigerator unit, the heat-sensitive element is fixed to the second layer cold surface (16) of the refrigerator (8), and the first layer cold surface (18) is provided with a heat insulator. The heat insulator is connected to the second layer cold surface (16) and the lead, and the first layer semiconductor refrigeration element (19) is connected to the second layer semiconductor refrigeration element (17) through the electrode.
A wide temperature low power integrated light emitting device according to claim 1, further comprising a collimating optical unit (7), a multiplexing assembly (9), a package (13), an output unit, and a heat a sensitive component, a backlight detector (4), a semiconductor laser chip (5), a thermistor (3), the backlight detector (4), a semiconductor laser chip (5), and a thermistor (3) are fixed to the TEC ( The second layer of cold surface (16) of 8), the emitted light of the semiconductor laser chip (5) is transmitted to the multiplexer assembly (9) through the optical collimation unit (7).
The invention relates to a wide temperature and low power integrated light emitting component according to claim 2, wherein the heat insulating body adopts a heat insulating block (1), and the heat insulating block (1) is disposed on the second layer cold. On the face (16).
A wide temperature low power integrated light emitting device according to claim 2 or claim 3, wherein the backlight detector (4), the semiconductor laser chip (5), and the thermistor (3) are fixed On the second cold surface (16), one end of the second cold surface (16) is connected to the envelope (13) and the other end is connected to the transition block (6).
A wide temperature low power integrated light emitting device according to claim 4, wherein said semiconductor laser chip (5) is mounted on the transition block (6), and the transition block (6) is cooled to the second layer. Face (16) is fixed.
A wide temperature low power integrated light emitting device according to claim 3, characterized in that the heat insulating block (1) is made of a material having a low thermal conductivity.
A wide temperature low power integrated light emitting device according to claim 2 or claim 3, wherein the optical collimating unit (7) is disposed on the first layer of the cold surface of the refrigerator (8) (18) Upper.
A wide temperature low power integrated light emitting device according to claim 2, further comprising an optical isolator (10), a converging optical component (11), a pin assembly (12), and a tube cover (14) The multiplexed optical element (9) is fixed to the bottom of the envelope (13), the isolator (10) is fixed to the light window of the envelope (13); the concentrating optical element (11) is fixed to the envelope (13) Upper, the pin assembly (12) is attached to the converging optical element (11).
A wide-temperature low-power integrated light emitting device according to claim 8, wherein the casing (13) adopts a casing having a high-frequency transmission line structure, and the casing is made of kovar material, and the bottom of the casing Tungsten copper is used, and a sapphire sealed light window is arranged on the casing.
A wide temperature low power integrated light emitting device according to claim 2, characterized in that the second layer cold surface (16) is made of AL 2 O 3 or ALN, and the cold surface is provided with a design pattern.