WO2019095528A1 - 一种单片集成半导体随机激光器 - Google Patents

一种单片集成半导体随机激光器 Download PDF

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WO2019095528A1
WO2019095528A1 PCT/CN2018/000304 CN2018000304W WO2019095528A1 WO 2019095528 A1 WO2019095528 A1 WO 2019095528A1 CN 2018000304 W CN2018000304 W CN 2018000304W WO 2019095528 A1 WO2019095528 A1 WO 2019095528A1
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random
layer
laser
region
gain
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French (fr)
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张明江
张建忠
吕天爽
乔丽君
刘毅
赵彤
王安帮
王云才
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太原理工大学
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Priority to US16/622,172 priority Critical patent/US10923881B2/en
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    • H—ELECTRICITY
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    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
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    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
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    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
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    • H01S3/0675—Resonators including a grating structure, e.g. distributed Bragg reflectors [DBR] or distributed feedback [DFB] fibre lasers
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    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling

Definitions

  • the present invention relates to the field of semiconductor lasers, and in particular to a monolithically integrated semiconductor random laser.
  • random lasers have been extensively studied due to their special feedback mechanisms and broad application prospects.
  • the optical cavity determines the mode of the laser, which determines the exit frequency of the laser.
  • Random laser random optical feedback forms a random cavity, which replaces the optical cavity in the traditional laser. The frequency and intensity of the emitted laser are random.
  • EI Chaikina et al. proposed an Er/Ge co-doped single-mode fiber random laser based on distributed Bragg grating feedback ( r N,Puente NP,Chaikina EI,et al.Single-mode Er-doped fiber random laser with distributed Bragg grating feedback[J].Optics Express,2009,17(2):395-404.), which uses a mask
  • the technique etches a Bragg grating in a doped fiber, increasing the effective length of the cavity by a large number of randomly distributed Bragg gratings, and in this way improves the efficiency and frequency selectivity of the system.
  • Ma Xiangyang et al. proposed an electric pumped random laser based on double SiO 2 -ZnO structure (see Chinese patent: Electro-pumped random laser based on double SiO2-ZnO structure, its preparation method and use, patent number :201210490468.4).
  • a first ZnO thin film, a first SiO 2 thin film, a second ZnO thin film, a second SiO 2 thin film, and a translucent electrode are sequentially deposited from the bottom surface of the silicon substrate, and an ohmic contact electrode is deposited on the back surface of the silicon substrate. That is, an electrically pumped random laser based on double SiO 2 -ZnO structure is obtained, the threshold current is significantly reduced, and the optical output power is significantly improved.
  • the above-mentioned random lasers are generated by using Rayleigh scattering in an electroluminescent material or an optical fiber and a random laser built on an external discrete component, which is bulky, susceptible to environmental influence, and unstable in output.
  • a random laser built on an external discrete component which is bulky, susceptible to environmental influence, and unstable in output.
  • the present invention provides a monolithically integrated semiconductor random laser.
  • the invention adopts a doped waveguide, and the beam is randomly fed back into the doped waveguide to form a random resonant cavity, so that the frequency and intensity of the laser emitted by the random laser are random, and the fabrication is simple and easy to integrate. It adopts monolithic integrated structure and has the advantages of light weight, small size, stable performance and strong integration.
  • the invention discloses a monolithically integrated semiconductor random laser, which is composed of a gain region and a random feedback region, and specifically comprises:
  • a limiting layer which is fabricated on the substrate
  • a waveguide layer having a strip shape formed longitudinally in the middle of the upper confinement layer
  • a P + electrode layer which is divided into two segments by an isolation trench, is formed on the waveguide layer;
  • An N + electrode layer is formed on the back side of the lower confinement layer.
  • the P + electrode layers divided into two segments respectively correspond to the gain region and the random feedback region.
  • the gain region provides a gain for the entire chip, and the corresponding active layer portion is a multi-quantum well material; the length of the gain region is 300 ⁇ 50 ⁇ m;
  • the random feedback region randomly performs feedback on the emitted light in the gain region, and the corresponding active layer portion is a bulk material; the active layer portion corresponding to the random feedback region is doped; the length of the random feedback region is 300 ⁇ 50 ⁇ m.
  • the invention adopts the monolithic integrated structure and has the advantages of light weight, small volume, stable performance and strong integration, and has important significance and value for promoting the application of random laser in scientific research, basic application and engineering technology.
  • Figure 1 is a schematic view of the structure of the present invention.
  • the present invention discloses a monolithically integrated semiconductor random laser, which is composed of a gain region A and a random feedback region B. Specifically include:
  • a confinement layer 3 which is formed on the substrate 2 and has a thickness of 80 to 200 nm for limiting carriers and photons in the vertical direction;
  • An active layer 4 is formed on the lower confinement layer 3 and has a thickness of 80 to 200 nm, wherein the active layer portion corresponding to the gain region A is a multi-quantum well material for generating photons by stimulated radiation, and the gain peak wavelength corresponds to 1310 nm or 1550 nm; the active layer portion corresponding to the random feedback region B is a bulk material;
  • a waveguide layer 6 is strip-shaped, and its longitudinal direction is formed in the middle of the upper limiting layer, and its function is mainly to guide the light;
  • a P + electrode layer 7 is formed on the waveguide layer 6, which is divided into two segments by the isolation trench 8, and the isolation trench 8 is made into a high resistance region by injecting He + ions or etching. Electrical isolation between the electrodes;
  • An N + electrode layer 1 is formed on the back side of the substrate 2.
  • the P + electrode layer 7 divided into two segments respectively correspond to the gain region A and the random feedback region B;
  • the gain region A provides a gain for the entire chip, and the corresponding active layer 4 portion is a multi-quantum well material; the length of the gain region is 300 ⁇ 50 ⁇ m;
  • the random feedback area B performs random feedback on the light emitted by the gain area A.
  • the active layer 4 corresponding to the random feedback area is a bulk material and is introduced into the doped waveguide 9; the length of the random feedback area B is 300 ⁇ 50 ⁇ m;
  • the end face of the monolithic integrated semiconductor random laser has a natural dissociation end face on the side of the gain region A, and the reflectivity is 0.32; the end face on the side of the random feedback region B is the light exit end face, and if the output power is increased, the output of the optical power is increased.
  • the reflectance can be reduced to 0.1, and finally a random laser is output from the end face.
  • the invention adopts a doped waveguide to form a random resonant cavity, and is a novel monolithically integrated random laser.
  • the random feedback of the beam in the doped waveguide forms a random cavity.
  • the random feedback of the incident beam by the doped waveguide determines the characteristics of the irradiated laser. Therefore, the frequency and intensity of the laser emitted by the random laser are random.
  • the single-chip integrated structure has the advantages of light weight, small size, stable performance and strong integration.

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

一种单片集成半导体随机激光器由增益区（A）和随机反馈区（B）两部分组成，包括：一衬底（2）；一下限制层（3），制作在衬底（2）上；一有源层（4），制作在下限制层（3）上；一上限制层（5），制作在有源层（4）上；一波导层（6），为条状，纵向制作在上限制层（5）上面的中间；一P +电极层（7），用隔离沟（8）将其分为两段，制作在波导层（6）上；一N +电极层（1），制作在下限制层（3）的背面。其中，分为两段的P +电极层（7）分别对应于增益区（A）和随机反馈区（B）。随机反馈区（B）采用掺杂波导（9），对增益区（A）发出的光进行随机反馈，进而产生随机激光。这种半导体激光器出射激光的频率、强度都具有随机性，且采用单片集成结构，重量轻、体积小、性能稳定、集成性强。

Description

一种单片集成半导体随机激光器 技术领域
本发明涉及半导体激光器领域，具体是涉及一种单片集成半导体随机激光器。
背景技术
近年来，随机激光器由于其特殊的反馈机制和广阔的应用前景得到了广泛的研究。在传统的激光器中，光学谐振腔决定了激光的模式，即决定了激光的出射频率。随机激光器随机光反馈形成随机谐振腔，取代了传统激光器中的光学谐振腔，其出射激光的频率、强度都具有随机性。
2009年，墨西哥E.I.Chaikina等人提出了基于分布式布拉格光栅反馈的Er/Ge共掺单模光纤随机激光器(
Figure PCTCN2018000304-appb-000001
r N，Puente N P，Chaikina E I，et al.Single-mode Er-doped fiber random laser with distributed Bragg grating feedback[J].Optics Express，2009，17(2)：395-404.)，其使用掩模板技术在掺杂光纤中刻蚀布拉格光栅，通过大量随机分布的布拉格光栅增加了谐振腔的有效长度，并且以这种方式提高了系统的效率和频率选择性。
2010年，Sergei K.Turitsyn等人提出了随机分布式光反馈光纤激光器(Turitsyn S K，Babin S A，El-Taher A E，et al.Random distributed feedback fibre laser[J].Optics Express，2012，20(27)：28033.)。其利用泵浦光注入光纤中产生的后向瑞利散射和拉曼效应放大，产生了随机激光。
2012年，北京化工大学公开了一种随机光纤激光器系统，采用全光纤化连接结构，将光纤激光器作为泵浦光源，利用光纤中的瑞利后向散射光 放大形成激光(见中国专利：随机光纤激光器，专利号：ZL201210328766.3)。光在光纤中传播时产生的瑞利散射光较弱，在反馈过程中，由于光纤长度、光纤材料及分立器件结构缺陷等原因导致部分反馈光损耗。
2013年，马向阳等人提出了一种基于双重SiO 2-ZnO结构的电抽运随机激光器(见中国专利：基于双重SiO2-ZnO结构的电抽运随机激光器、其制备方法及用途，专利号：201210490468.4)。在硅衬底的正面自下而上依次沉积有第一ZnO薄膜、第一SiO 2薄膜、第二ZnO薄膜、第二SiO 2薄膜和半透明电极，在硅衬底背面沉积有欧姆接触电极，即制得了基于双重SiO 2-ZnO结构的电抽运随机激光器，阈值电流显著降低，光输出功率明显提高。
2015年，电子科技大学公开了一种随机激光器(见中国专利：随机激光器、随机谐振腔制造及探测微小颗粒浓度的方法，专利号：201510513253.3)，采用泵浦光源、激光反射镜等器件，通过在随机激光器谐振腔内壁涂有纳米TiO2颗粒和紫外胶混合而成的随机介质薄膜，在多重散射作用下，实现了随机激光的可控输出。该发明工艺复杂、技术要求高，这些都将对最终随机激光的产生有较大影响。
2015年，渥太华大学鲍晓毅课题组提出了一种新型的F-P腔的布里渊随机激光器(Xu Y，Xiang D，Ou Z，et al.Random Fabry-Perot resonator-based sub-kHz Brillouin fiber laser to improve spectral resolution in linewidth measurement[J].Optics Letters，2015，40(9)：1920.)，并通过实验验证了该随机激光器改善了线宽测量中的光谱分辨率，实现了低于0.9KHz的线宽表征精度。由于单模光纤中瑞利散射系数较小，这种随机激光器需要较长(几十千米)的单模光纤。
2017年，Heba A.Shawki等人提出一种随机光纤激光器(Shawki H A， Kotb H E，Khalil D.Narrow line width semiconductor optical amplifier based random laser[C]//SPIE LASE.2017：100832C.)，其中半导体光放大器(SOA)是激光的增益介质，采用1km的单模光纤提供瑞利后向散射取代传统的光学谐振腔，产生随机激光。
然而，上述随机激光的产生都是利用电致发光材料或光纤中的瑞利散射加上外部分立元件搭建而成的随机激光器，其体积庞大，易受环境影响，输出不稳定。要真正实现随机激光器的实用化和产业化，必须研制体积小、性能稳定的集成随机激光器。
发明内容
本发明是提供一种单片集成半导体随机激光器。本发明采用掺杂波导，光束在掺杂波导内随机反馈形成随机谐振腔，进而使随机激光器出射激光的频率、强度都具有随机性，且制作简便、易于集成。采用单片集成结构，具有重量轻、体积小、性能稳定、集成性强等优点。
本发明公开了一种单片集成半导体随机激光器，由增益区和随机反馈区两部分组成，具体包括：
一衬底；
一下限制层，其制作在衬底上；
一有源层，其制作在下限制层上；
一上限制层，其制作在有源层上；
一波导层，为条状，其纵向制作在上限制层上面的中间；
一P +电极层，其是用隔离沟将其分为两段，制作在波导层上；
一N +电极层，其制作在下限制层的背面。
其中，分为两段的P +电极层分别对应于增益区和随机反馈区。
其中所述的增益区为整个芯片提供增益，其对应的有源层部分为多量子阱材料；增益区的长度为300±50μm；
其中所述的随机反馈区对增益区所述发出的光进行随机反馈，其对应的有源层部分为体材料；该随机反馈区对应的有源层部分引入掺杂；随机反馈区的长度为300±50μm。
本发明采用单片集成结构，具有重量轻、体积小、性能稳定、集成性强等优点，对推动随机激光在科学研究、基础应用、工程技术等领域的应用具有重要的意义和价值。
附图说明
图1是本发明的结构示意图。图中：1-N +电极层，2-衬底，3-下限制层，4-有源层，5-上限制层，6-波导层，7-P +电极层，8-隔离沟，9-掺杂波导，A-增益区，B-随机反馈区。
具体实施方式
参阅图1所示，本发明公开了一种单片集成半导体随机激光器，由增益区A和随机反馈区B两部分组成。具体包括：
一衬底2；
一下限制层3，其制作在衬底2上，厚度为80至200nm，用于垂直方向限制载流子和光子；
一有源层4，其制作在下限制层3上，厚度为80至200nm，其中增益区A对应的有源层部分为多量子阱材料，用于受激辐射产生光子，增益峰值波长对应1310nm或1550nm；随机反馈区B对应的有源层部分为体材料；
一上限制层5，其制作在有源层4上，和下限制层3共同作用，用于垂直方向限制载流子和光子；
一波导层6，为条状，其纵向制作在上限制层上面的中间，其作用主要为对光进行导引；
一P +电极层7，制作在波导层6上，其是用隔离沟8将其分为两段，隔离沟8是通过注入He +离子或者刻蚀的方式使之成为高阻区，从而实现各电极之间的电隔离；
一N +电极层1，其制作在衬底2的背面。
其中，分为两段的P +电极层7分别对应于增益区A和随机反馈区B；
其中所述的增益区A为整个芯片提供增益，其对应的有源层4部分为多量子阱材料；增益区的长度为300±50μm；
其中所述的随机反馈区B对增益区A所述发出的光进行随机反馈，该随机反馈区对应的有源层4部分为体材料，并引入掺杂波导9；随机反馈区B的长度为300±50μm；
其中所述的一种单片集成半导体随机激光器在增益区A一侧的端面为自然解离端面，反射率为0.32；随机反馈区B一侧的端面为出光端面，若需提高出光功率镀增透膜，反射率可减小到0.1，最终从该端面输出随机激光。
本发明采用掺杂波导形成随机谐振腔，是一种新型的单片集成随机激光器。光束在掺杂波导内发生随机反馈形成随机谐振腔，掺杂波导对入射光的随机反馈决定了辐射激光的特性，因此随机激光器出射激光的频率、强度都具有随机性。且采用单片集成结构，具有重量轻、体积小、性能稳定、集成性强等优点。
以上所述的具体实施例，对本发明一种单片集成半导体随机激光器进行了进一步详细说明，应理解的是，以上所述仅为本发明的具体实施例而 已，并不用于限制本发明，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (3)

  1. 一种单片集成半导体随机激光器，其特征在于，包括：
    一衬底；
    一下限制层，其制作在衬底上；
    一有源层，其制作在下限制层上；
    一上限制层，其制作在有源层上；
    一波导层，为条状，其纵向制作在上限制层上面的中间；
    一P +电极层，其是用隔离沟将其分为两段，制作在波导层上；
    一N +电极层，其制作在下限制层的背面；
    其中，分为两段的P +电极层分别对应于增益区和随机反馈区。
  2. 根据权利要求1所述的一种单片集成半导体随机激光器，其特征在于，其中所述的增益区为整个芯片提供增益，增益区对应的有源层部分为多量子阱材料；增益区的长度为300±50μm。
  3. 根据权利要求1所述的一种单片集成半导体随机激光器，其特征在于，其中所述的随机反馈区对增益区发出的光进行随机反馈，随机反馈区对应的有源层部分为体材料；该随机反馈区对应的有源层部分引入掺杂；随机反馈区的长度为300±50μm。
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