WO2019091475A1 - 晶体硅太阳电池的单面绒面制备方法 - Google Patents

晶体硅太阳电池的单面绒面制备方法 Download PDF

Info

Publication number
WO2019091475A1
WO2019091475A1 PCT/CN2018/115032 CN2018115032W WO2019091475A1 WO 2019091475 A1 WO2019091475 A1 WO 2019091475A1 CN 2018115032 W CN2018115032 W CN 2018115032W WO 2019091475 A1 WO2019091475 A1 WO 2019091475A1
Authority
WO
WIPO (PCT)
Prior art keywords
silicon wafer
suede
solution
solar cell
laminated structure
Prior art date
Application number
PCT/CN2018/115032
Other languages
English (en)
French (fr)
Inventor
查嘉伟
苏晓东
Original Assignee
嘉兴尚能光伏材料科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 嘉兴尚能光伏材料科技有限公司 filed Critical 嘉兴尚能光伏材料科技有限公司
Publication of WO2019091475A1 publication Critical patent/WO2019091475A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the invention relates to the technical field of solar cells, in particular to a method for preparing a single-faced suede of a crystalline silicon solar cell.
  • Photovoltaic power generation is an important component of new energy sources and has achieved rapid development in recent years.
  • crystalline silicon (single crystal and polycrystalline) solar cells have the largest market share and have maintained a market share of nearly 90%.
  • the main purpose of the texturing process is to remove the damage layer on the surface of the silicon wafer and form a trapped suede structure to reduce the surface reflectance of the solar cell, thereby improving the photoelectric conversion efficiency of the solar cell.
  • lye-based single crystal silicon chemical etching and acid-based polysilicon chemical etching are commonly used in the current crystal silicon cell texturing process.
  • the Chinese patent application No. 201510486388.5 which has been published by the applicant, has disclosed a single-sided nano-sue preparation method for a crystalline silicon solar cell, that is, a technique for obtaining different front and back surface structures on a single or polycrystalline surface.
  • the focus is on the preparation of single-faced suede, which can achieve the suede with excellent light trapping performance on the front side of the silicon wafer, but the process steps are relatively more, and it does not involve how to reduce the recombination of the back side of the silicon wafer.
  • an object of the present invention is to provide a method for preparing a single-faced suede of a crystalline silicon solar cell.
  • a method for preparing a single-faced suede of a crystalline silicon solar cell comprising the steps of:
  • the silicon wafers are stacked two by two to obtain a closely adsorbed laminated structure, and then inserted into the silicon wafer basket;
  • the silicon wafer basket is directly placed into the cashmere liquid to perform a texturing process, and the suede surface is obtained on both sides of the laminated structure;
  • the silicon wafer is a single crystal silicon wafer, a polycrystalline silicon wafer, or a monocrystalline silicon wafer
  • the initial surface of the silicon wafer is an original wire-cut surface or a damaged surface or a polished surface.
  • the texturing liquid is an alkaline fluffing liquid
  • the formed suede is a pyramid trapping structure
  • the texturing process in the step S2 comprises:
  • the silicon wafer basket is placed in an alkaline chemical etching solution to etch the surface of the laminated structure to form a pyramid trapping structure.
  • the alkaline chemical etching solution is an alkaline solution containing NaOH or KOH, and the mass concentration of NaOH or KOH is 0.5%. 5%, the etching time is 150s to 1500s, and the reaction temperature is 50 to 100 °C.
  • the silicon wafer is a polycrystalline silicon wafer or a monocrystalline silicon wafer
  • the cashmere liquid is an acidic fluffing liquid
  • the formed suede surface is a pitted suede structure.
  • the texturing process in the step S2 comprises:
  • the silicon wafer basket is immersed in a solution containing metal ions to adhere a layer of metal nanoparticles to the surface of the laminated structure, the metal ions being selected from one of gold ions, silver ions and copper ions;
  • the acidic chemical etching solution being selected from one of the following mixed solutions: a mixed solution of HF and H 2 O 2 , a mixed solution of HF and HNO 3 a mixed solution of HF and H 2 CrO 4 ; wherein the concentration of HF is 1 to 15 mol/L, the concentration of H 2 O 2 , HNO 3 or H 2 CrO 4 is 0.05 to 0.5 mol/L, and the etching time is 30 to 3000 s, the reaction temperature is 5 to 45 ° C.
  • the texturing process in the step S2 further comprises: after forming the pitted structure;
  • the first cleaning liquid is a nitric acid solution having a mass percentage of 27 to 69% or a mass percentage of 0.01 to 10% and 0.01% to 10% of a mixed solution of hydrogen peroxide and ammonia, the cleaning time is 60-1200 s, the cleaning temperature is 5-85 ° C;
  • the second cleaning solution is a hydrofluoric acid solution having a mass percentage of 1 to 10%, and the cleaning time is 60 to 600 s, the cleaning temperature is 5 to 45 ° C;
  • the laminated structure is placed in a chemically modified etching solution for microstructure modification etching;
  • the chemically modified etching solution is selected from one of the following solutions: NaOH solution, KOH solution, tetramethylammonium hydroxide solution, HNO 3 and a mixed solution of HF;
  • the concentration is 0.001 to 0.1 mol / L
  • the reaction time is 10 to 1000 s
  • the reaction temperature is 5 to 85 ° C;
  • the concentration is 0.001 to 0.1 mol / L
  • the reaction time is 10 to 1000 s
  • the reaction temperature is 5 to 85 ° C;
  • the concentration thereof is 0.001 to 0.1 mol / L, the reaction time is 10 to 1000 s, and the reaction temperature is 5 to 85 ° C;
  • the concentrations of HF and HNO 3 are 0.05 to 0.5 mol/L and 1 to 10 mol/L, respectively, the reaction time is 10 to 1000 s, and the reaction temperature is 5 to 45 °C.
  • the method further includes:
  • the post-treatment process in the step S4 includes a polishing process and/or an etching process to remove surface defects caused by the penetration of the fleece liquid on the surface of the silicon wafer which is not formed into a pile.
  • the etching process is specifically:
  • the separated silicon wafer has a suede side and floats in a mixed acidic solution containing HF/HNO 3 to perform corrosion on the back side and the side surface of the silicon wafer, wherein the mass concentrations of HF and HNO 3 are respectively 1% to 10 % and 5% to 50%, corrosion time is 5s ⁇ 500s, reaction temperature is 5 ⁇ 50 ° C;
  • the mass concentration of NaOH or KOH or tetramethylammonium hydroxide is 0.5% to 5%
  • the etching time is 5 s to 500 s
  • the reaction temperature is 25 to 100 °C.
  • the post-stage post-processing process of step S4 further includes:
  • the wafer is cleaned and dried.
  • the same basket can double the loading capacity, and the production efficiency can be doubled
  • the preparation method has the advantages of simple process, forming only the required suede on the outer surface, and the silicon wafer and the silicon wafer are stacked to protect the respective back surface from the complicated texturing process, the simple polished surface structure and the existing industrial production process (such as PERC process) better compatibility;
  • the minority life of the surface of the silicon wafer after the velvet can be improved, the roughness of the back surface of the silicon wafer can be reduced, and the recombination of the back surface of the silicon wafer can be greatly reduced, thereby improving the photoelectric conversion efficiency.
  • FIG. 1 is a specific flow chart of a method for preparing a single-faced suede of a crystalline silicon solar cell according to the present invention
  • FIG. 2 is a schematic structural view of a silicon wafer basket in the present invention
  • FIG. 3 is a schematic view showing a pyramid trap structure of a monocrystalline silicon wafer laminated structure according to the present invention.
  • FIG. 4 is a schematic view showing a structure of a polycrystalline silicon sheet laminated structure forming a pitted surface in the present invention
  • FIG. 5 is another specific flow chart of a method for preparing a single-faced suede of a crystalline silicon solar cell according to the present invention.
  • 6a, 6b are topographical views of the front and back sides of the polycrystalline silicon wafer in Embodiment 1;
  • 7a and 7b are topographical views of the front and back surfaces of the single crystal silicon wafer of Example 5.
  • the present invention discloses a method for preparing a single-faced suede of a crystalline silicon solar cell, comprising the following steps:
  • the structure of the silicon flower basket 20 is shown in FIG. 2, which is identical to the existing silicon flower basket.
  • the two side walls of the silicon flower basket are correspondingly provided with a plurality of slots 21, preferably, the silicon wafer basket of the present invention.
  • There are 25 corresponding slots and two corresponding silicon wafers can be inserted into each corresponding slot, for a total of 50 silicon wafers can be inserted.
  • the number of slots can be changed as needed. For example, 50 slots can be set, and 100 silicon wafers can be inserted correspondingly, or 100 slots can be set, and 200 silicon wafers can be inserted correspondingly.
  • the silicon wafer basket is directly placed into the softening liquid to perform a texturing process, and the suede is obtained on both sides of the laminated structure.
  • the silicon wafer proposed in the present invention comprises various silicon wafers, such as a direct silicon wafer, a monocrystalline silicon wafer (straight-drawing single crystal silicon wafer), a polycrystalline silicon wafer, a monocrystalline silicon wafer (cast single crystal silicon wafer), and Other unmentioned crystal silicon wafers whose initial surface may be the original wire-cut surface or the de-damaged surface or the polished surface.
  • various silicon wafers such as a direct silicon wafer, a monocrystalline silicon wafer (straight-drawing single crystal silicon wafer), a polycrystalline silicon wafer, a monocrystalline silicon wafer (cast single crystal silicon wafer), and Other unmentioned crystal silicon wafers whose initial surface may be the original wire-cut surface or the de-damaged surface or the polished surface.
  • the texturing liquid is an alkaline fluffing liquid
  • the suede surface can be formed into a pyramid trapping structure, and the cross-sectional structure thereof is as shown in FIG. 3, and the suede surface is alkali.
  • the conventional suede formed by the velvet when the silicon wafer is a polycrystalline silicon wafer type single crystal silicon wafer, the velvet liquid is an acidic velvet liquid, and the formed suede is a pitted suede structure, and the suede is formed by acid velvet.
  • Nano or micron suede the cross-sectional structure is shown in Figure 4.
  • the process of forming the conventional suede by alkali-based velvet is specifically:
  • the silicon wafer basket is placed in an alkaline chemical etching solution to etch the surface of the laminated structure to form a pyramid trap structure.
  • the alkaline chemical etching solution is an alkaline solution containing NaOH or KOH, and the mass concentration of NaOH or KOH is 0.5% to 5%.
  • the etching time is from 150 s to 1500 s, and the reaction temperature is from 50 to 100 ° C.
  • the cashmere process for forming nano or micron suede by acid flocking is specifically as follows:
  • the silicon wafer basket is immersed in a solution containing metal ions to adhere a layer of metal nanoparticles to the surface of the laminated structure, and the metal ions are selected from one of gold ions, silver ions and copper ions;
  • the surface of the laminated structure is etched with an acidic chemical etching solution to form a pitted suede structure.
  • the acidic chemical etching solution is selected from one of the following mixed solutions: a mixed solution of HF and H 2 O 2 , a mixed solution of HF and HNO 3 , HF a mixed solution with H 2 CrO 4 ; wherein the concentration of HF is 1 to 15 mol/L, the concentration of H 2 O 2 , HNO 3 or H 2 CrO 4 is 0.05 to 0.5 mol/L, and the etching time is 30 to 3000 s.
  • the reaction temperature is 5 to 45 °C.
  • the method further comprises:
  • the first cleaning liquid, the second cleaning liquid and the deionized water are respectively used to wash the above-mentioned laminated structure to remove metal particles;
  • the first cleaning liquid is a nitric acid solution having a mass percentage of 27 to 69%, the cleaning time is 60 to 1200 s, and the cleaning temperature is 5 ⁇ 85°C;
  • the second cleaning solution is a hydrofluoric acid solution with a mass percentage of 1% to 10%, the cleaning time is 60-600 s, and the cleaning temperature is 5-45° C.;
  • the above laminated structure is placed in a chemically modified etching solution for microstructure modification etching;
  • the chemically modified etching solution is selected from one of the following solutions: NaOH solution, KOH solution, tetramethylammonium hydroxide solution, HNO 3 and HF mixture;
  • the concentration is 0.001 to 0.1 mol / L
  • the reaction time is 10 to 1000 s
  • the reaction temperature is 5 to 85 ° C;
  • the concentration is 0.001 to 0.1 mol / L
  • the reaction time is 10 to 1000 s
  • the reaction temperature is 5 to 85 ° C;
  • the concentration thereof is 0.001 to 0.1 mol / L, the reaction time is 10 to 1000 s, and the reaction temperature is 5 to 85 ° C;
  • the concentrations of HF and HNO 3 are 0.05 to 0.5 mol/L and 1 to 10 mol/L, respectively, the reaction time is 10 to 1000 s, and the reaction temperature is 5 to 45 °C.
  • the process step is simpler, and the production cost in the industry is reduced.
  • the preparation method of the present invention may further include after step S3:
  • a surface of the silicon wafer which is not formed into a matte surface is subjected to a post-treatment process, which may include, but is not limited to, a polishing process and an etching process to remove the surface of the silicon wafer which is not formed into a suede, and is infiltrated by a small amount of the fluffing liquid. Surface defects caused.
  • step S2 whether the single crystal silicon wafer is alkali-spun or the polycrystalline silicon wafer is acid-spun, a small amount of the fluffing liquid penetrates between the two silicon wafers, especially the side surface of the silicon wafer. And the outer surface of the silicon wafer (defining the front side of the silicon wafer with the surface of the suede structure and the side of the other side of the back surface), due to the influence of the infiltrated fluffing liquid, the surface and the back surface of the silicon wafer have certain surface defects, and the surface of the silicon wafer Defects formed can affect their optoelectronic properties.
  • the surface treatment of the side and the back surface of the silicon wafer is repaired by polishing or etching to improve the photoelectric performance of the silicon wafer.
  • the polishing process is substantially the same as the mechanical polishing effect in the prior art, and the etching process includes two types:
  • One is an acid solution etching, which has a fluffy side of the separated silicon wafer floating upward in a mixed acidic solution containing HF/HNO 3 to perform corrosion on the back and sides of the silicon wafer, wherein HF and HNO 3
  • the mass concentration is 1% to 10% and 5% to 50%, the corrosion time is 5s to 500s, and the reaction temperature is 5 to 50 °C;
  • the other is an alkaline solution etching, which has a fluffy side of the separated silicon wafer, floats on an alkaline solution containing any one or more of NaOH or KOH or tetramethylammonium hydroxide, and performs silicon. Corrosion of the back side and side of the sheet, wherein the mass concentration of NaOH or KOH or tetramethylammonium hydroxide is 0.5% to 5%, the etching time is 5 s to 500 s, and the reaction temperature is 25 to 100 °C.
  • the silicon wafer after performing the polishing process or the etching process, can also be cleaned and dried.
  • a single-faced suede preparation method for a crystalline silicon solar cell comprising the following steps:
  • a P-type polycrystalline silicon wafer having a size of 156.75 mm ⁇ 156.75 mm and a thickness of 180 ⁇ 10 ⁇ m is chemically etched or polished on both sides. 50 pieces of the above-mentioned polished silicon wafers are stacked one upon another to obtain a closely-adsorbed laminated structure, and 25 pieces are inserted. Specifications of the special wafer wafer basket;
  • the wafer flower basket is directly placed into the acid fluffing liquid for the texturing process, and the main steps thereof include:
  • the silicon wafer basket is put into the HF solution containing 0.0005mol / L AgNO 3 , the HF concentration is 0.1mol / L, Ag adhesion reaction at room temperature for 30s;
  • the silicon laminate structure after the completion of the previous step is placed in a mixed solution of HF and H 2 O 2 at a concentration of 3 mol / L, 0.1 mol / L, respectively, at room temperature for 300 s;
  • the silicon wafer laminate structure after the completion of the previous step is placed in a mass percentage of 69% nitric acid solution for 300s, the cleaning temperature is 20 ° C;
  • the silicon wafer laminate structure after the completion of the previous step is placed in a mass percentage of 5% hydrofluoric acid solution for 200s, the cleaning temperature is 20 ° C;
  • the silicon wafer laminate structure after the completion of the previous step is placed in a 0.05 mol / L KOH solution, and reacted at 20 ° C for 300 s;
  • a single-faced suede preparation method for a crystalline silicon solar cell comprising the following steps:
  • a P-type single crystal silicon wafer having a size of 156.75 mm ⁇ 156.75 mm and a thickness of 180 ⁇ 10 ⁇ m is chemically etched or polished on both sides, and 50 pieces of the above-mentioned polished silicon wafers are stacked one upon another to obtain a closely-adsorbed laminated structure. Insert a 25-piece flannel-specific wafer basket;
  • the wafer flower basket is directly placed into the alkaline fluffing liquid for the texturing process, and the main steps thereof include:
  • the silicon wafer basket is directly placed into the cashmere liquid to perform the texturing process, and the main steps thereof comprise: inputting into a KOH solution containing a single crystal texturing additive in a concentration of 2%, and reacting at 80 ° C for 500 s;
  • a single-faced suede preparation method for a crystalline silicon solar cell comprising the following steps:
  • the silicon wafer is a P-type polycrystalline silicon wafer with a size of 156.75 mm ⁇ 156.75 mm and a thickness of 180 ⁇ 10 ⁇ m.
  • the 50 silicon wafers are stacked one on another to obtain a closely-adsorbed laminated structure, and then inserted into a 25-piece special-made silicon wafer basket. ;
  • the wafer flower basket is directly placed into the acid fluffing liquid for the texturing process, and the main steps thereof include:
  • the wafer flower basket is put into an HF solution containing 0.0005 mol / L AgNO 3 , the HF concentration is 0.1 mol / l, Ag adhesion reaction at room temperature for 30 s;
  • the silicon laminate structure after the completion of the previous step is placed in a mixed solution of HF and H 2 O 2 at a concentration of 3 mol / L, 0.1 mol / L, respectively, at room temperature for 300 s;
  • the silicon wafer laminate structure after the completion of the previous step is placed in a mass percentage of 69% nitric acid solution for 300s, the cleaning temperature is 20 ° C;
  • the silicon wafer laminate structure after the completion of the previous step is placed in a mass percentage of 5% hydrofluoric acid solution for 200s, the cleaning temperature is 20 ° C;
  • the silicon wafer laminate structure after the completion of the previous step is placed in a 0.05 mol / L KOH solution, and reacted at 20 ° C for 300 s;
  • the etching process is performed on the surface (back surface and side surface) of the silicon wafer which is not formed into a suede surface, and the etching process is specifically as follows:
  • the side of the separated silicon wafer having the pile surface is floated upward through a mixed acidic solution containing KOH to ensure that only the back side and the side surface are corroded.
  • a mixed acidic solution containing KOH containing KOH to ensure that only the back side and the side surface are corroded.
  • the mass concentration of KOH is 2%
  • the etching time is 50 s
  • the reaction temperature is 80 ° C;
  • a single-faced suede preparation method for a crystalline silicon solar cell comprising the following steps:
  • the silicon wafer is a P-type polycrystalline silicon wafer having a size of 156.75 mm ⁇ 156.75 mm and a thickness of 180 ⁇ 10 ⁇ m, and 50 wafers of the above-mentioned silicon wafers are stacked two by two to obtain a closely-adsorbed laminated structure, and then inserted into a 25-piece special-made silicon wafer basket. ;
  • the wafer flower basket is directly placed into the acid fluffing liquid for the texturing process, and the main steps thereof include:
  • the silicon wafer basket is put into the HF solution containing 0.0005mol / L AgNO 3 , the HF concentration is 0.1mol / L, Ag adhesion reaction at room temperature for 30s;
  • the silicon laminate structure after the completion of the previous step is placed in a mixed solution of HF and H 2 O 2 at a concentration of 3 mol / L, 0.1 mol / L, respectively, at room temperature for 300 s;
  • the silicon wafer laminate structure after the completion of the previous step is placed in a mass percentage of 69% nitric acid solution for 300s, the cleaning temperature is 20 ° C;
  • the silicon wafer laminate structure after the completion of the previous step is placed in a mass percentage of 5% hydrofluoric acid solution for 200s, the cleaning temperature is 20 ° C;
  • the silicon wafer laminate structure after the completion of the previous step is placed in a 0.05 mol / L KOH solution, and reacted at 20 ° C for 300 s;
  • the etching process is performed on the surface (back surface and side surface) of the silicon wafer which is not formed into a suede surface, and the etching process is specifically as follows:
  • the side of the separated silicon wafer having the pile surface is floated upward through a mixed acidic solution containing HF and HNO 3 to ensure that only the back side and the side surface are corroded.
  • a mixed acidic solution containing HF and HNO 3 containing HF and HNO 3 to ensure that only the back side and the side surface are corroded.
  • the mass concentrations of HF and HNO 3 are 5% and 40%, the etching time is 50 s, and the reaction temperature is 8 ° C;
  • a single-faced suede preparation method for a crystalline silicon solar cell comprising the following steps:
  • the silicon wafer is a P-type single crystal silicon wafer with a size of 156.75 mm ⁇ 156.75 mm and a thickness of 180 ⁇ 10 ⁇ m. 50 wafers of the above silicon wafers are stacked one upon another to obtain a closely-adsorbed laminated structure, and then 25 pieces of special silicon for veneer insertion are inserted.
  • Flower basket
  • the wafer flower basket is directly placed into the alkaline fluffing liquid for the texturing process, and the main steps thereof include:
  • the silicon wafer basket is put into a 2% KOH solution containing a single crystal texturing additive, and reacted at 80 ° C for 500 s;
  • the etching process is performed on the surface (back surface and side surface) of the silicon wafer which is not formed into a suede surface, and the etching process is specifically as follows:
  • the side of the separated silicon wafer having the pile surface is floated upward through a mixed acidic solution containing KOH to ensure that only the back side and the side surface are corroded.
  • a mixed acidic solution containing KOH containing KOH to ensure that only the back side and the side surface are corroded.
  • the mass concentration of KOH is 2%
  • the etching time is 50 s
  • the reaction temperature is 80 ° C;
  • a single-faced suede preparation method for a crystalline silicon solar cell comprising the following steps:
  • the silicon wafer is a P-type single crystal silicon wafer with a size of 156.75 mm ⁇ 156.75 mm and a thickness of 180 ⁇ 10 ⁇ m. 50 wafers of the above silicon wafers are stacked one upon another to obtain a closely-adsorbed laminated structure, and then 25 pieces of special silicon for veneer insertion are inserted.
  • Flower basket
  • the wafer flower basket is directly placed into the alkaline fluffing liquid for the texturing process, and the main steps thereof include:
  • the silicon wafer basket is put into a 2% KOH solution containing a single crystal texturing additive, and reacted at 80 ° C for 500 s;
  • the etching process is performed on the surface (back surface and side surface) of the silicon wafer which is not formed into a suede surface, and the etching process is specifically as follows:
  • the side of the separated silicon wafer having the pile surface is floated upward through a mixed acidic solution containing HF and HNO 3 to ensure that only the back side and the side surface are corroded.
  • a mixed acidic solution containing HF and HNO 3 containing HF and HNO 3 to ensure that only the back side and the side surface are corroded.
  • the mass concentrations of HF and HNO 3 are 8 and 40%, the etching time is 100 s, and the reaction temperature is 8 ° C;
  • the silicon wafer laminate structure is directly formed by the surface adsorption force between the two silicon wafers, and the water film is not required to be formed by the deionized water in the prior art, thereby reducing the process steps in the industry and greatly reducing the process steps. Production costs in the industry.
  • the first and second embodiments are all single-faced suede preparation methods that do not include a post-treatment process
  • the embodiments 3 to 6 are all single-faced suede preparation methods including a post-treatment process
  • the embodiments 1, 3, and 4 Both of them form a nano-pitted pile surface on one side of the polycrystalline silicon wafer
  • Embodiments 2, 5, and 6 each form a pyramid-trapped structure suede surface on one side of the single crystal silicon wafer.
  • 6a and 6b are topographical views of the front and back sides of the polycrystalline silicon wafer in the first embodiment, respectively, and the top and back surface top views of the silicon wafer in the second embodiment are similar to those in FIGS. 6a and 6b
  • FIGS. 7a and 7b are respectively an embodiment.
  • the topographical view of the front and back sides of the single crystal silicon wafer in 5, the top and back topography of the silicon wafer in Examples 3, 4, and 6 are similar to those of Figs. 7a and 7b.
  • the minority carrier lifetime of the surface of the polycrystalline silicon wafer was increased by about 50%
  • the minority carrier lifetime of the surface of the single crystal silicon wafer was increased by about 50%.
  • the post-processing process in the above embodiments is described by taking an etching process as an example.
  • the mechanical polishing method may be used instead of the etching process to correct the back side and the side surface of the silicon wafer, and the same can be achieved.
  • the purpose of correcting the back and side surface topography of the silicon wafer is not illustrated here by way of example.
  • the same basket can double the loading capacity, and the production efficiency can be doubled
  • the preparation method has the advantages of simple process, forming the required suede on the outer surface, and the silicon wafer and the silicon wafer are stacked to protect the respective back surface from the complicated texturing process, and the back surface structure which is simply polished and the existing industrial production process (such as PERC) Process) better compatibility;
  • the minority life of the surface of the silicon wafer after the velvet can be improved, the roughness of the back surface of the silicon wafer can be reduced, and the recombination of the back surface of the silicon wafer can be greatly reduced, thereby improving the photoelectric conversion efficiency.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Weting (AREA)

Abstract

本发明公开了一种晶体硅太阳电池的单面绒面制备方法，所述方法包括以下步骤：S1、将硅片两两相叠得到紧密吸附的层叠结构后插入硅片花篮中；S2、将硅片花篮直接放入制绒液进行制绒工艺，在层叠结构的两面得到绒面；S3、分离上述层叠结构，得到单面绒面的硅片。本发明制备方法工艺简单，仅在外表面形成所需要的绒面，硅片与硅片相叠后能保护各自背面免受复杂的制绒工艺，经简单抛光处理的背面结构与现有工业化生产工艺兼容性较好；在工艺步骤相当的情况下，能够降低硅片背面的粗糙度，大幅度减少硅片背面的复合，提高制绒后硅片表面的少子寿命，从而提高了光电转换效率。

Description

晶体硅太阳电池的单面绒面制备方法
本申请要求了申请日为2017年11月13日，申请号为201711118849.9，发明名称为“晶体硅太阳电池的单面绒面制备方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明涉及太阳能电池技术领域，特别是涉及一种晶体硅太阳电池的单面绒面制备方法。
背景技术
光伏发电是新能源的重要组成，近年来获得了飞速发展。目前商业化的太阳电池产品中，晶体硅(单晶和多晶)太阳电池的市场份额最大，一直保持接近九成的市场占有率。
目前，在晶体硅太阳电池的生产工艺中，制绒工艺的主要目的是去除硅片表面切割损伤层以及形成陷光绒面结构降低太阳电池的表面反射率，从而提高太阳电池的光电转换效率。其中，基于碱液的单晶硅化学腐蚀和基于酸液的多晶硅化学腐蚀是目前晶硅电池制绒工艺中普遍使用的技术。
本申请人已公开的中国发明专利201510486388.5已公开了晶体硅太阳电池的单面纳米绒面制备方法，即是在单、多晶表面获得不同正背面表面结构的一种技术。其重点在于单面绒面的制备，能够实现在硅片正面获得具有优异陷光性能的绒面，但其工艺步骤相对较多，且未涉及如何降低硅片背面的复合。
因此，针对上述技术问题，有必要提供一种晶体硅太阳电池的单面绒面制备方法。
发明内容
有鉴于此，本发明的目的在于提供一种晶体硅太阳电池的单面绒面制备方法。
为了实现上述目的，本发明实施例提供的技术方案如下：
一种晶体硅太阳电池的单面绒面制备方法，所述方法包括以下步骤：
S1、将硅片两两相叠得到紧密吸附的层叠结构后插入硅片花篮中；
S2、将硅片花篮直接放入制绒液进行制绒工艺，在层叠结构的两面得到绒面；
S3、分离上述层叠结构，得到单面绒面的硅片。
作为本发明的进一步改进，所述硅片为单晶硅片、多晶硅片、或类单晶硅片，硅片的初始表面为原始线切割后表面或去损伤后表面或抛光后表面。
作为本发明的进一步改进，所述硅片为单晶硅片或类单晶硅片时，制绒液为碱性制绒液，形成的绒面为金字塔陷光结构。
作为本发明的进一步改进，所述步骤S2中的制绒工艺包括：
将硅片花篮放入碱性化学腐蚀液中腐蚀层叠结构表面，形成金字塔陷光结构，所述碱性化学腐蚀液为含有NaOH或KOH的碱性溶液，NaOH或KOH的质量浓度为0.5％～5％，腐蚀时间为150s～1500s，反应温度为50～100℃。
作为本发明的进一步改进，所述硅片为多晶硅片或类单晶硅片时，制绒液为酸性制绒液，形成的绒面为凹坑绒面结构。
作为本发明的进一步改进，所述步骤S2中的制绒工艺包括：
将硅片花篮放入含有金属离子的溶液中浸泡，使层叠结构表面附着一层金属纳米颗粒，所述金属离子选自金离子、银离子和铜离子中的一种；
用酸性化学腐蚀液腐蚀层叠结构表面，形成凹坑绒面结构，所述酸性化学腐蚀液选自以下混合溶液中的一种：HF与H 2O 2的混合溶液、HF与HNO 3的混合溶液、HF与H 2CrO 4的混合溶液；其中，HF的浓度为1～15mol/L，H 2O 2、HNO 3或H 2CrO 4的浓度为0.05～0.5mol/L，腐蚀时间为30～3000s，反应温度为5～45℃。
作为本发明的进一步改进，所述步骤S2中的制绒工艺在形成凹坑绒面结构之后还包括：
分别用第一清洗液、第二清洗液、去离子水清洗上述层叠结构，去除金属颗粒；所述第一清洗液为质量百分比为27～69％的硝酸溶液或质量百分比为0.01～10％和0.01％～10％的双氧水和氨水混合溶液，清洗时间为60～1200s，清洗温度为5～85℃；所述第二清洗液为质量百分比为1～10％的氢氟酸溶液，清洗时间为60～600s，清洗温度为5～45℃；
将上述层叠结构放入化学修正腐蚀液中进行微结构修正刻蚀；所述化学修正腐蚀液选自以下溶液中的一种：NaOH溶液、KOH溶液、四甲基氢氧化铵溶液、HNO 3与HF的混合溶液；
当选自NaOH溶液时，其浓度为0.001～0.1mol/L，反应时间为10～1000s，反应温度为5～85℃；
当选自KOH溶液时，其浓度为0.001～0.1mol/L，反应时间为10～1000s，反应温度为5～85℃；
当选自四甲基氢氧化铵溶液时，其浓度为0.001～0.1mol/L，反应时间为10～1000s，反应温度为5～85℃；
当选自HNO 3与HF的混合溶液时，HF与HNO 3的浓度分别为0.05～0.5mol/L、1～10mol/L，反应时间为10～1000s，反应温度为5～45℃。
作为本发明的进一步改进，所述步骤S3后还包括：
S4、对未形成绒面的硅片表面进行后处理工艺。
作为本发明的进一步改进，所述步骤S4中的后处理工艺包括抛光工艺和/或刻蚀工艺，以去除未形成绒面的硅片表面因制绒液渗透造成的表面缺陷。
作为本发明的进一步改进，所述刻蚀工艺具体为：
将分离后的硅片具有绒面的一面向上，漂浮于含有HF/HNO 3的混合酸性溶液中，进行硅片背面和侧面的腐蚀，其中，HF和HNO 3的质量浓度分别为1％～10％和5％～50％，腐蚀时间为5s～500s，反应温度为5～50℃；
和/或，
将分离后的硅片具有绒面的一面向上，漂浮于含有NaOH或KOH或四甲基氢氧化铵中任意一种或多种的碱性溶液中，进行硅片背面和侧面的腐蚀，其中，NaOH或KOH或四甲基氢氧化铵的质量浓度为0.5％～5％，腐蚀时间为5s～500s，反应温度为25～100℃。
作为本发明的进一步改进，所述步骤S4后中后处理工艺还包括：
清洗硅片并进行干燥处理。
本发明的有益效果是：
能够减少一半的化学品消耗，大幅减低了生产成本；同一花篮增加一倍的装片量，生产效率能提高一倍；
制备方法工艺简单，仅在外表面形成所需要的绒面，硅片与硅片相叠后能保护各自背面免受复杂的制绒工艺，经简单抛光处理的背面结构与现有工业化生产工艺(如PERC工艺)兼容性较好；
在工艺步骤相当的情况下，能够提高制绒后硅片表面的少子寿命，降低硅片背面的粗糙度，大幅度减少硅片背面的复合，从而提高了光电转换效率。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明中记载的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明中晶体硅太阳电池的单面绒面制备方法的具体流程图；
图2为本发明中硅片花篮的结构示意图；
图3为本发明中单晶硅片层叠结构形成金字塔陷光结构的示意图；
图4为本发明中多晶硅片层叠结构形成凹坑绒面结构的示意图；
图5为本发明中晶体硅太阳电池的单面绒面制备方法的另一具体流程图；
图6a、6b分别为实施例1中多晶硅片正面和背面的形貌图；
图7a、7b分别为实施例5中单晶硅片正面和背面的形貌图。
具体实施方式
为了使本技术领域的人员更好地理解本发明中的技术方案，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都应当属于本发明保护的范围。
参图1所示，本发明公开了一种晶体硅太阳电池的单面绒面制备方法，包括以下步骤：
S1、将硅片两两相叠得到紧密吸附的层叠结构后插入硅片花篮中。
硅片花篮20的结构示意图参图2所示，其与现有的硅片花篮完全相同，硅片花篮的两侧壁上对应设置有若干插槽21，优选地，本发明中硅片花篮的包含25个对应设置的插槽，每个对应的插槽中可插入两片相叠的硅片，总共可以插入50片硅片。当然，插槽的数量可以根据需要进行变化，如可设置50个插槽，对应地可以插入100片硅片，也可设置100个插槽，对应地可以插入200片硅片。
S2、将硅片花篮直接放入制绒液进行制绒工艺，在层叠结构的两面得到绒面。
其中，本发明中所提的硅片包括各种硅片，如直接硅片、单晶硅片(直拉单晶硅片)、多晶硅片、类单晶硅片(铸造单晶硅片)及其他未提及的晶体硅片，其初始表面可以是原始线切割后表面或去损伤后表面或抛光后表面。
当硅片为单晶硅片类单晶硅片时，制绒液为碱性制绒液，可以形成的绒面为金字塔陷光结构，其截面结构如图3所示，该绒面为碱制绒形成的常规绒面；当硅片为多晶硅片类单晶硅片时，制绒液为酸性制绒液，形成的绒面为凹坑绒面结构，该绒面为酸制绒形成的纳米或微米绒面，其截面结构如图4所示。
S3、分离上述层叠结构，得到单面绒面的硅片。
具体地，碱制绒形成常规绒面的制绒工艺具体为：
将硅片花篮放入碱性化学腐蚀液中腐蚀层叠结构表面，形成金字塔陷光结构，碱性化学腐蚀液为含有NaOH或KOH的碱性溶液，NaOH或KOH的质量浓度为0.5％～5％，腐蚀时间为150s～1500s，反应温度为50～100℃。
酸制绒形成纳米或微米绒面的制绒工艺具体为：
将硅片花篮放入含有金属离子的溶液中浸泡，使层叠结构表面附着一层金属纳米颗粒， 金属离子选自金离子、银离子和铜离子中的一种；
用酸性化学腐蚀液腐蚀层叠结构表面，形成凹坑绒面结构，酸性化学腐蚀液选自以下混合溶液中的一种：HF与H 2O 2的混合溶液、HF与HNO 3的混合溶液、HF与H 2CrO 4的混合溶液；其中，HF的浓度为1～15mol/L，H 2O 2、HNO 3或H 2CrO 4的浓度为0.05～0.5mol/L，腐蚀时间为30～3000s，反应温度为5～45℃。
进一步地，在形成凹坑绒面结构之后还包括：
分别用第一清洗液、第二清洗液、去离子水清洗上述层叠结构，去除金属颗粒；第一清洗液为质量百分比为27～69％的硝酸溶液，清洗时间为60～1200s，清洗温度为5～85℃；第二清洗液为质量百分比为1～10％的氢氟酸溶液，清洗时间为60～600s，清洗温度为5～45℃；
将上述层叠结构放入化学修正腐蚀液中进行微结构修正刻蚀；化学修正腐蚀液选自以下溶液中的一种：NaOH溶液、KOH溶液、四甲基氢氧化铵溶液、HNO 3与HF的混合溶液；
当选自NaOH溶液时，其浓度为0.001～0.1mol/L，反应时间为10～1000s，反应温度为5～85℃；
当选自KOH溶液时，其浓度为0.001～0.1mol/L，反应时间为10～1000s，反应温度为5～85℃；
当选自四甲基氢氧化铵溶液时，其浓度为0.001～0.1mol/L，反应时间为10～1000s，反应温度为5～85℃；
当选自HNO 3与HF的混合溶液时，HF与HNO 3的浓度分别为0.05～0.5mol/L、1～10mol/L，反应时间为10～1000s，反应温度为5～45℃。
本发明中无需通过去离子水在硅片层叠结构之间形成水膜，直接通过硅片表面的吸附力即可形成紧密吸附的层叠结构，工艺步骤更为简单，降低了工业中的生产成本。
优选地，参图5所示，本发明的制备方法在步骤S3后还可包括：
S4、对未形成绒面的硅片表面进行后处理工艺。
该步骤S4中对未形成绒面的硅片表面进行后处理工艺，该后处理工艺可以包括但不限于抛光工艺及刻蚀工艺，以去除未形成绒面的硅片表面因少量制绒液渗透造成的表面缺陷。
具体讲，在步骤S2中，不管是对单晶硅片进行碱制绒或者对多晶硅片进行酸制绒，少量制绒液均会渗透至两个硅片之间，尤其是硅片的侧面、以及硅片背面(定义硅片正面为具有绒面结构的一面，另一面为背面)外围，由于渗透的制绒液影响，会造成硅片侧面和背面具有一定的表面缺陷，进而该硅片表面形成的缺陷会影响其光电性能。
因此，本发明中在制绒后进行后处理工艺，采用抛光或者刻蚀的方式修复硅片侧面及背面的表面形貌，以提高硅片的光电性能。
具体地，抛光工艺与现有技术中的机械抛光效果基本相同，而刻蚀工艺包括两种：
一种是酸溶液刻蚀，将分离后的硅片具有绒面的一面向上，漂浮于含有HF/HNO 3的混合酸性溶液中，进行硅片背面和侧面的腐蚀，其中，HF和HNO 3的质量浓度分别为1％～10％和5％～50％，腐蚀时间为5s～500s，反应温度为5～50℃；
另一种是碱溶液刻蚀，将分离后的硅片具有绒面的一面向上，漂浮于含有NaOH或KOH或四甲基氢氧化铵中任意一种或多种的碱性溶液中，进行硅片背面和侧面的腐蚀，其中，NaOH或KOH或四甲基氢氧化铵的质量浓度为0.5％～5％，腐蚀时间为5s～500s，反应温度为25～100℃。
另外，在进行抛光工艺或刻蚀工艺后，还可以清洗硅片并进行干燥处理。
以下结合具体实施例对本发明作进一步说明。
实施例1：
一种晶体硅太阳电池的单面绒面制备方法，包括如下步骤：
1、将大小为156.75mm×156.75mm，厚度180±10μm的P型多晶硅片，双面化学腐蚀或抛光，将50片上述抛光后硅片两两相叠得到紧密吸附的层叠结构后插入25片规格的制绒专用硅片花篮；
2、将硅片花篮直接放入酸性制绒液进行制绒工艺，其主要步骤包括：
1)、将硅片花篮投入到含0.0005mol/L AgNO 3的HF溶液中，HF浓度为0.1mol/L，于室温条件下进行Ag附着反应30s；
2)、将上步完成后的硅片层叠结构放入HF与H 2O 2的混合溶液中，其浓度分别为3mol/L、0.1mol/L，于室温条件下反应300s；
3)、将上步完成后的硅片层叠结构放入质量百分比为69％硝酸溶液中清洗300s，清洗温度为20℃；
4)、将上步完成后的硅片层叠结构放入质量百分比为5％氢氟溶液中清洗200s，清洗温度为20℃；
5)、将上步完成后的硅片层叠结构放入0.05mol/L的KOH溶液中，于20℃条件下反应300s；
3、分离上述层叠结构，得到单面纳米凹坑绒面的硅片；
4、并将上述硅片清洗干净并干燥处理。
实施例2：
一种晶体硅太阳电池的单面绒面制备方法，包括如下步骤：
1、将大小为156.75mm×156.75mm，厚度180±10μm的P型单晶晶硅片，双面化学腐蚀或抛光，将50片上述抛光后硅片两两相叠得到紧密吸附的层叠结构后插入25片规格的制绒专用硅片花篮；
2、将硅片花篮直接放入碱性制绒液进行制绒工艺，其主要步骤包括：
将硅片花篮直接放入制绒液进行制绒工艺，其主要步骤包括：投入到含有单晶制绒添加剂的浓度为2％的KOH溶液中，于80℃条件下反应500s；
3、分离上述层叠结构，得到单面金字塔陷光结构绒面的硅片；
4、并将上述硅片清洗干净并干燥处理。
实施例3：
一种晶体硅太阳电池的单面绒面制备方法，包括如下步骤：
1、硅片为大小156.75mm×156.75mm，厚度180±10μm的P型多晶硅片，将50片上述硅片两两相叠得到紧密吸附的层叠结构后插入25片规格的制绒专用硅片花篮；
2、将硅片花篮直接放入酸性制绒液进行制绒工艺，其主要步骤包括：
1)、将硅片花篮投入到含0.0005mol/L AgNO 3的HF溶液中，HF浓度为0.1mol/l，于室温条件下进行Ag附着反应30s；
2)、将上步完成后的硅片层叠结构放入HF与H 2O 2的混合溶液中，其浓度分别为3mol/L、0.1mol/L，于室温条件下反应300s；
3)、将上步完成后的硅片层叠结构放入质量百分比为69％硝酸溶液中清洗300s，清洗温度为20℃；
4)、将上步完成后的硅片层叠结构放入质量百分比为5％氢氟溶液中清洗200s，清洗温度为20℃；
5)、将上步完成后的硅片层叠结构放入0.05mol/L的KOH溶液中，于20℃条件下反应300s；
3、分离上述层叠结构，得到单面纳米凹坑绒面的硅片；
4、对未形成绒面的硅片表面(背面和侧面)进行刻蚀工艺，刻蚀工艺具体为：
将分离后的硅片具有绒面的一面向上，漂浮通过含有KOH的混合酸性溶液，确保仅背面和侧面被腐蚀。其中，KOH的质量浓度为2％，腐蚀时间为50s，反应温度为80℃；
5、并将上述硅片清洗干净并干燥处理。
实施例4：
一种晶体硅太阳电池的单面绒面制备方法，包括如下步骤：
1.硅片为大小156.75mm×156.75mm，厚度180±10μm的P型多晶硅片，将50片上述硅片两两相叠得到紧密吸附的层叠结构后插入25片规格的制绒专用硅片花篮；
2、将硅片花篮直接放入酸性制绒液进行制绒工艺，其主要步骤包括：
1)、将硅片花篮投入到含0.0005mol/L AgNO 3的HF溶液中，HF浓度为0.1mol/L，于室温条件下进行Ag附着反应30s；
2)、将上步完成后的硅片层叠结构放入HF与H 2O 2的混合溶液中，其浓度分别为3mol/L、0.1mol/L，于室温条件下反应300s；
3)、将上步完成后的硅片层叠结构放入质量百分比为69％硝酸溶液中清洗300s，清洗温度为20℃；
4)、将上步完成后的硅片层叠结构放入质量百分比为5％氢氟溶液中清洗200s，清洗温度为20℃；
5)、将上步完成后的硅片层叠结构放入0.05mol/L的KOH溶液中，于20℃条件下反应300s；
3、分离上述层叠结构，得到单面纳米凹坑绒面的硅片；
4、对未形成绒面的硅片表面(背面和侧面)进行刻蚀工艺，刻蚀工艺具体为：
将分离后的硅片具有绒面的一面向上，漂浮通过含有HF和HNO 3的混合酸性溶液，确保仅背面和侧面被腐蚀。其中，HF和HNO 3的质量浓度分别为5％和40％，腐蚀时间为50s，反应温度为8℃；
5、并将上述硅片清洗干净并干燥处理。
实施例5：
一种晶体硅太阳电池的单面绒面制备方法，包括如下步骤：
1、硅片为大小156.75mm×156.75mm，厚度180±10μm的P型单晶硅片，将50片上述硅片两两相叠得到紧密吸附的层叠结构后插入25片规格的制绒专用硅片花篮；
2、将硅片花篮直接放入碱性制绒液进行制绒工艺，其主要步骤包括：
将硅片花篮投入到含有单晶制绒添加剂的浓度为2％的KOH溶液中，于80℃条件下反应500s；
3、分离上述层叠结构，得到单面金字塔陷光结构绒面的硅片；
4、对未形成绒面的硅片表面(背面和侧面)进行刻蚀工艺，刻蚀工艺具体为：
将分离后的硅片具有绒面的一面向上，漂浮通过含有KOH的混合酸性溶液，确保仅背面和侧面被腐蚀。其中，KOH的质量浓度为2％，腐蚀时间为50s，反应温度为80℃；
5、并将上述硅片清洗干净并干燥处理。
实施例6：
一种晶体硅太阳电池的单面绒面制备方法，包括如下步骤：
1、硅片为大小156.75mm×156.75mm，厚度180±10μm的P型单晶硅片，将50片上述硅片两两相叠得到紧密吸附的层叠结构后插入25片规格的制绒专用硅片花篮；
2、将硅片花篮直接放入碱性制绒液进行制绒工艺，其主要步骤包括：
将硅片花篮投入到含有单晶制绒添加剂的浓度为2％的KOH溶液中，于80℃条件下反应500s；
3、分离上述层叠结构，得到单面金字塔陷光结构绒面的硅片；
4、对未形成绒面的硅片表面(背面和侧面)进行刻蚀工艺，刻蚀工艺具体为：
将分离后的硅片具有绒面的一面向上，漂浮通过含有HF和HNO 3的混合酸性溶液，确保仅背面和侧面被腐蚀。其中，HF和HNO 3的质量浓度分别为8和40％，腐蚀时间为100s，反应温度为8℃；
5、并将上述硅片清洗干净并干燥处理。
上述各实施例中，均是直接采用两个硅片之间的表面吸附力形成硅片层叠结构，无需通过现有技术中的去离子水形成水膜，减少了工业中的工艺步骤，大大降低了工业中的生产成本。
其中，实施例1、2均为未包括后处理工艺的单面绒面制备方法，实施例3～6均为包括后处理工艺的单面绒面制备方法，其中，实施例1、3、4均为在多晶硅片一面形成纳米凹坑绒面，实施例2、5、6均为在单晶硅片一面形成金字塔陷光结构绒面。其中，图6a、6b分别为实施例1中多晶硅片正面和背面的形貌图，实施例2中硅片正面和背面的形貌图与图6a、6b类似；图7a、7b分别为实施例5中单晶硅片正面和背面的形貌图，实施例3、4、6中硅片正面和背面的形貌图与图7a、7b类似。
经过测试，实施例3、4与实施例1相比，多晶硅片表面的少子寿命提高50％左右，实施例5、6与实施例2相比，单晶硅片表面的少子寿命提高50％左右。可以发现，经过后处理工艺，在工艺步骤相当的情况下，本发明能够有效降低硅片背面的粗糙度，大幅度减少硅片背面的复合，从而提高了光电转换效率。
应当理解的是，上述实施例中后处理工艺均以刻蚀工艺为例进行说明，当然，在其他实 施方式中也可以采用机械抛光方式代替刻蚀工艺修正硅片的背面及侧面，同样可以达到修正硅片背面和侧面表面形貌的目的，此处不再一一举例进行说明。
由以上技术方案可以看出，与现有技术相比，本发明具有如下有益效果：
能够减少一半的化学品消耗，大幅减低了生产成本；同一花篮增加一倍的装片量，生产效率能提高一倍；
制备方法工艺简单，在外表面形成所需要的绒面，硅片与硅片相叠后能保护各自背面免受复杂的制绒工艺，经简单抛光处理的背面结构与现有工业化生产工艺(如PERC工艺)兼容性较好；
在工艺步骤相当的情况下，能够提高制绒后硅片表面的少子寿命，降低硅片背面的粗糙度，大幅度减少硅片背面的复合，从而提高了光电转换效率。
对于本领域技术人员而言，显然本发明不限于上述示范性实施例的细节，而且在不背离本发明的精神或基本特征的情况下，能够以其他的具体形式实现本发明。因此，无论从哪一点来看，均应将实施例看作是示范性的，而且是非限制性的，本发明的范围由所附权利要求而不是上述说明限定，因此旨在将落在权利要求的等同要件的含义和范围内的所有变化囊括在本发明内。不应将权利要求中的任何附图标记视为限制所涉及的权利要求。
此外，应当理解，虽然本说明书按照实施方式加以描述，但并非每个实施方式仅包含一个独立的技术方案，说明书的这种叙述方式仅仅是为清楚起见，本领域技术人员应当将说明书作为一个整体，各实施例中的技术方案也可以经适当组合，形成本领域技术人员可以理解的其他实施方式。

Claims (11)

  1. 一种晶体硅太阳电池的单面绒面制备方法，其特征在于，所述方法包括以下步骤：
    S1、将硅片两两相叠得到紧密吸附的层叠结构后插入硅片花篮中；
    S2、将硅片花篮直接放入制绒液进行制绒工艺，在层叠结构的两面得到绒面；
    S3、分离上述层叠结构，得到单面绒面的硅片。
  2. 根据权利要求1所述的晶体硅太阳电池的单面绒面制备方法，其特征在于，所述硅片为单晶硅片、多晶硅片、或类单晶硅片，硅片的初始表面为原始线切割后表面或去损伤后表面或抛光后表面。
  3. 根据权利要求2所述的晶体硅太阳电池的单面绒面制备方法，其特征在于，所述硅片为单晶硅片或类单晶硅片时，制绒液为碱性制绒液，形成的绒面为金字塔陷光结构。
  4. 根据权利要求3所述的晶体硅太阳电池的单面绒面制备方法，其特征在于，所述步骤S2中的制绒工艺包括：
    将硅片花篮放入碱性化学腐蚀液中腐蚀层叠结构表面，形成金字塔陷光结构，所述碱性化学腐蚀液为含有NaOH或KOH的碱性溶液，NaOH或KOH的质量浓度为0.5％～5％，腐蚀时间为150s～1500s，反应温度为50～100℃。
  5. 根据权利要求2所述的晶体硅太阳电池的单面绒面制备方法，其特征在于，所述硅片为多晶硅片或类单晶硅片时，制绒液为酸性制绒液，形成的绒面为凹坑绒面结构。
  6. 根据权利要求5所述的晶体硅太阳电池的单面绒面制备方法，其特征在于，所述步骤S2中的制绒工艺包括：
    将硅片花篮放入含有金属离子的溶液中浸泡，使层叠结构表面附着一层金属纳米颗粒，所述金属离子选自金离子、银离子和铜离子中的一种；
    用酸性化学腐蚀液腐蚀层叠结构表面，形成凹坑绒面结构，所述酸性化学腐蚀液选自以下混合溶液中的一种：HF与H 2O 2的混合溶液、HF与HNO 3的混合溶液、HF与H 2CrO 4的混合溶液；其中，HF的浓度为1～15mol/L，H 2O 2、HNO 3或H 2CrO 4的浓度为0.05～0.5mol/L，腐蚀时间为30～3000s，反应温度为5～45℃。
  7. 根据权利要求6所述的晶体硅太阳电池的单面绒面制备方法，其特征在于，所述步骤S2中的制绒工艺在形成凹坑绒面结构之后还包括：
    分别用第一清洗液、第二清洗液、去离子水清洗上述层叠结构，去除金属颗粒；所述第一清洗液为质量百分比为27～69％的硝酸溶液或质量百分比为0.01～10％和0.01％～10％的双 氧水和氨水混合溶液，清洗时间为60～1200s，清洗温度为5～85℃；所述第二清洗液为质量百分比为1～10％的氢氟酸溶液，清洗时间为60～600s，清洗温度为5～45℃；
    将上述层叠结构放入化学修正腐蚀液中进行微结构修正刻蚀；所述化学修正腐蚀液选自以下溶液中的一种：NaOH溶液、KOH溶液、四甲基氢氧化铵溶液、HNO 3与HF的混合溶液；
    当选自NaOH溶液时，其浓度为0.001～0.1mol/L，反应时间为10～1000s，反应温度为5～85℃；
    当选自KOH溶液时，其浓度为0.001～0.1mol/L，反应时间为10～1000s，反应温度为5～85℃；
    当选自四甲基氢氧化铵溶液时，其浓度为0.001～0.1mol/L，反应时间为10～1000s，反应温度为5～85℃；
    当选自HNO 3与HF的混合溶液时，HF与HNO 3的浓度分别为0.05～0.5mol/L、1～10mol/L，反应时间为10～1000s，反应温度为5～45℃。
  8. 根据权利要求1所述的晶体硅太阳电池的单面绒面制备方法，其特征在于，所述步骤S3后还包括：
    S4、对未形成绒面的硅片表面进行后处理工艺。
  9. 根据权利要求8所述的晶体硅太阳电池的单面绒面制备方法，其特征在于，所述步骤S4中的后处理工艺包括抛光工艺和/或刻蚀工艺，以去除未形成绒面的硅片表面因制绒液渗透造成的表面缺陷。
  10. 根据权利要求9所述的晶体硅太阳电池的单面绒面制备方法，其特征在于，所述刻蚀工艺具体为：
    将分离后的硅片具有绒面的一面向上，漂浮于含有HF/HNO 3的混合酸性溶液中，进行硅片背面和侧面的腐蚀，其中，HF和HNO 3的质量浓度分别为1％～10％和5％～50％，腐蚀时间为5s～500s，反应温度为5～50℃；
    和/或，
    将分离后的硅片具有绒面的一面向上，漂浮于含有NaOH或KOH或四甲基氢氧化铵中任意一种或多种的碱性溶液中，进行硅片背面和侧面的腐蚀，其中，NaOH或KOH或四甲基氢氧化铵的质量浓度为0.5％～5％，腐蚀时间为5s～500s，反应温度为25～100℃。
  11. 根据权利要求8所述的晶体硅太阳电池的单面绒面制备方法，其特征在于，所述步骤S4后中后处理工艺还包括：
    清洗硅片并进行干燥处理。
PCT/CN2018/115032 2017-11-13 2018-11-12 晶体硅太阳电池的单面绒面制备方法 WO2019091475A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201711118849.9A CN107910386B (zh) 2017-11-13 2017-11-13 晶体硅太阳电池的单面绒面制备方法
CN201711118849.9 2017-11-13

Publications (1)

Publication Number Publication Date
WO2019091475A1 true WO2019091475A1 (zh) 2019-05-16

Family

ID=61844014

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/115032 WO2019091475A1 (zh) 2017-11-13 2018-11-12 晶体硅太阳电池的单面绒面制备方法

Country Status (2)

Country Link
CN (1) CN107910386B (zh)
WO (1) WO2019091475A1 (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107910386B (zh) * 2017-11-13 2020-08-11 嘉兴尚能光伏材料科技有限公司 晶体硅太阳电池的单面绒面制备方法
CN108549003A (zh) * 2018-04-20 2018-09-18 江苏鑫华半导体材料科技有限公司 一种适用于高频光电导衰减法测量半导体级单晶硅少子寿命的预处理方法
CN108400182A (zh) * 2018-05-03 2018-08-14 苏州阿特斯阳光电力科技有限公司 硅片单面制备纳米绒面的设备及太阳能电池片的生产设备
CN108807569B (zh) * 2018-06-20 2020-02-14 通威太阳能（合肥）有限公司 一种单晶电池片的表面微米纳米复合结构的制备方法
CN109487340A (zh) * 2018-10-29 2019-03-19 江苏辉伦太阳能科技有限公司 兼容单/多晶黑硅的湿法背抛光装置及湿法背抛光方法
CN109860083B (zh) * 2019-02-21 2021-08-24 中国科学院物理研究所 用于晶硅制绒的链式设备及单面倒金字塔制绒的制备方法
CN113394305A (zh) * 2021-06-18 2021-09-14 中国华能集团清洁能源技术研究院有限公司 一种晶硅电池单面制绒方法
CN115483299B (zh) * 2022-10-19 2024-10-11 通威太阳能（安徽）有限公司 硅片制绒清洗方法、太阳电池及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101593790A (zh) * 2008-05-30 2009-12-02 上海太阳能科技有限公司 硅电池片的制绒方法
CN104037257A (zh) * 2013-03-08 2014-09-10 北京北方微电子基地设备工艺研究中心有限责任公司 太阳能电池及其制造方法、单面抛光设备
CN105006496A (zh) * 2015-08-10 2015-10-28 苏州旦能光伏科技有限公司 晶体硅太阳电池的单面纳米绒面制备方法
CN107910386A (zh) * 2017-11-13 2018-04-13 嘉兴尚能光伏材料科技有限公司 晶体硅太阳电池的单面绒面制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102185011A (zh) * 2010-12-02 2011-09-14 江阴浚鑫科技有限公司 太阳能电池片的制绒方法
CN103681974B (zh) * 2013-12-27 2016-09-28 常州时创能源科技有限公司 双槽式多晶硅片制绒方法
CN105006444A (zh) * 2015-07-03 2015-10-28 陈�光 一种高效晶硅太阳能电池片的生产工艺

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101593790A (zh) * 2008-05-30 2009-12-02 上海太阳能科技有限公司 硅电池片的制绒方法
CN104037257A (zh) * 2013-03-08 2014-09-10 北京北方微电子基地设备工艺研究中心有限责任公司 太阳能电池及其制造方法、单面抛光设备
CN105006496A (zh) * 2015-08-10 2015-10-28 苏州旦能光伏科技有限公司 晶体硅太阳电池的单面纳米绒面制备方法
CN107910386A (zh) * 2017-11-13 2018-04-13 嘉兴尚能光伏材料科技有限公司 晶体硅太阳电池的单面绒面制备方法

Also Published As

Publication number Publication date
CN107910386A (zh) 2018-04-13
CN107910386B (zh) 2020-08-11

Similar Documents

Publication Publication Date Title
WO2019091475A1 (zh) 晶体硅太阳电池的单面绒面制备方法
CN104195645B (zh) 用于刻蚀太阳能电池硅片的酸性制绒液、制绒方法、太阳能电池片及其制作方法
JP6553731B2 (ja) Ｎ型両面電池のウェットエッチング方法
CN105226113B (zh) 一种晶体硅太阳能电池的绒面结构及其制备方法
WO2021136196A1 (zh) 一种具有金字塔叠加结构的单晶硅片
CN104037257B (zh) 太阳能电池及其制造方法、单面抛光设备
JP2018006744A (ja) 結晶シリコン太陽電池のテクスチャー構造およびその調製方法
CN105006496A (zh) 晶体硅太阳电池的单面纳米绒面制备方法
JP2011061030A (ja) 結晶シリコン系太陽電池
WO2019091112A1 (zh) 无刻蚀处理的太阳能电池的制备工艺
CN113410319A (zh) 一种常温制绒方法、及其制绒而成的硅片、太阳能电池片及其制备方法
CN116936687B (zh) 联合钝化背接触电池及去除侧蚀残留掩膜层的后制绒方法
CN114256382A (zh) 硅片的制绒清洗方法及晶硅太阳能电池的制备方法
CN111653650B (zh) 一种TOPCon电池生产片清洗参数优化及制备方法
CN104393104B (zh) 一种用于hit太阳电池织构的处理技术
CN115424925A (zh) 一种钝化接触太阳电池的背面处理方法
CN104157740A (zh) 一种n型双面太阳能电池的制备方法
TW201036188A (en) Method of fabricating solar cells
CN110518075B (zh) 一种黑硅钝化膜、其制备方法及应用
CN104393094B (zh) 一种用于hit电池的n型硅片清洗制绒方法
CN109616556A (zh) 一种硅片背面退火和正面镀膜一体化的方法以及一种电池片的制备方法
CN113921649A (zh) 一种硅基异质结太阳能电池制备方法
CN114628547B (zh) 一种背表面局域形貌的太阳电池及其制备方法
CN116053358A (zh) 一种异质结电池的制备方法
CN107177889A (zh) 一种单晶硅太阳能电池的表面绒面制备方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18876124

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18876124

Country of ref document: EP

Kind code of ref document: A1