WO2019091112A1 - 无刻蚀处理的太阳能电池的制备工艺 - Google Patents
无刻蚀处理的太阳能电池的制备工艺 Download PDFInfo
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- WO2019091112A1 WO2019091112A1 PCT/CN2018/090915 CN2018090915W WO2019091112A1 WO 2019091112 A1 WO2019091112 A1 WO 2019091112A1 CN 2018090915 W CN2018090915 W CN 2018090915W WO 2019091112 A1 WO2019091112 A1 WO 2019091112A1
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- silicon wafer
- silicon nitride
- silicon
- solar cell
- nitride film
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- 238000005530 etching Methods 0.000 title claims abstract description 17
- 238000002360 preparation method Methods 0.000 title abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 88
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 88
- 239000010703 silicon Substances 0.000 claims abstract description 88
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 57
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 57
- 238000009792 diffusion process Methods 0.000 claims abstract description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 238000005245 sintering Methods 0.000 claims abstract description 6
- 239000005360 phosphosilicate glass Substances 0.000 claims abstract description 5
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 42
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 15
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 12
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 8
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 12
- 230000000694 effects Effects 0.000 abstract description 6
- 238000002955 isolation Methods 0.000 abstract description 5
- 238000007747 plating Methods 0.000 abstract 2
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 238000005498 polishing Methods 0.000 abstract 1
- 125000004437 phosphorous atom Chemical group 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 2
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 2
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 210000000085 cashmere Anatomy 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the invention relates to the technical field of preparing solar cells, in particular to a preparation process of a solar cell without etching treatment.
- the process of solar cell preparation process is usually cleaning and texturing, diffusion, etching, dephosphorization, PEVCD, printing and sintering, etc.
- the main function of etching is to remove N-type silicon around the diffusion silicon wafer to prevent leakage.
- the edge of the silicon wafer is usually processed by a dry etching process or a wet etching process, and both the dry etching and the wet etching damage the silicon wafer, and the dry etching is used.
- the plasmon bombards the edge of the silicon wafer and damages the silicon wafer; the wet etching is affected by the environmental humidity and the concentration of the chemical solution, and the fluctuation is relatively large, and the etching effect is affected.
- the technical problem to be solved by the present invention is to provide a process for preparing a solar cell without etching treatment in order to solve the problem of using the etching to prevent leakage of the edge of the battery sheet and causing damage to the battery sheet.
- the technical solution adopted by the present invention to solve the technical problem thereof is: a preparation process of a solar cell without etching treatment, comprising the following steps:
- the surface of the silicon wafer is polished
- the silicon wafer is coated with a silicon nitride film, and when the silicon wafer is coated with a silicon nitride film, the four side edges of the front surface of the silicon wafer are simultaneously coated with a silicon nitride film;
- step d using hydrofluoric acid to remove the silicon nitride film in step b and the phosphosilicate glass formed on the surface of the silicon wafer during diffusion in step d;
- step a the surface of the silicon wafer is polished with a mixture of sodium hydroxide, hydrogen peroxide and water.
- the film thickness of the silicon nitride film in the step b is controlled to be 70 nm to 80 nm.
- step c the silicon wafer is placed in a sodium hydroxide solution or a potassium hydroxide solution, thereby vulcanizing the front side of the silicon wafer, and the temperature of the sodium hydroxide solution or the potassium hydroxide solution is 80 ° C, and the texturing time is It is 10min.
- the diffusion resistance in step d is 90-100 ⁇ / ⁇ .
- step f is specifically: growing a silicon nitride layer on the front side of the silicon wafer using PEVCD.
- the silicon nitride layer in the step f has a thickness of 75 nm and a refractive index of 2.1.
- step f is specifically:
- a layer of aluminum oxide is deposited on the back side of the silicon wafer, wherein the thickness of the aluminum oxide layer is between 5-10 nm, and the deposition temperature of the aluminum oxide is 260-280 ° C;
- a back silicon nitride layer is deposited on the aluminum oxide layer on the back side of the silicon wafer by using PEVCD, wherein the back silicon nitride layer has a thickness of 150 nm and a refractive index of 2.06;
- a front silicon nitride layer was then deposited on the front side of the silicon wafer using PEVCD, wherein the front silicon nitride layer had a thickness of 75 nm and a refractive index of 2.1.
- the invention has the beneficial effects that the preparation process of the non-etching-treated solar cell of the present invention utilizes a silicon nitride film as an edge isolation layer, thereby achieving the effect of preventing leakage of the edge of the cell sheet; in addition, the back surface of the silicon wafer during texturing
- the silicon nitride film is used for protection, which can realize single-side velvet of silicon wafer, reduce chemical liquid loss, reduce production cost, optimize the overall process steps, and not damage the silicon wafer.
- silicon is used.
- the parallel resistance of the chip is significantly improved, and the leakage current is greatly reduced.
- a preparation process of a solar cell without etching treatment comprising the following steps:
- the surface of the silicon wafer is polished, and the surface of the silicon wafer is polished by using a mixture of sodium hydroxide, hydrogen peroxide and water;
- the silicon nitride film is plated on the back surface of the silicon wafer.
- the silicon nitride film is plated on the back surface of the silicon wafer, the four sides of the front surface of the silicon wafer are simultaneously coated with a silicon nitride film having a width of 1 mm, silicon nitride.
- the film thickness is controlled at 70nm-80nm. Since the silicon nitride film has non-conductivity, the silicon nitride film in this step can be used to prevent the phosphorus atoms from diffusing at the edges and prevent the edge N-type. The formation of the layer can achieve the effect of edge isolation, which can replace the etching process.
- the silicon nitride film can be used as protection to realize the single-side texturing of the silicon wafer, reducing the chemical liquid loss and reducing the production cost;
- the front side of the silicon wafer is subjected to texturing, and the silicon wafer is placed in a sodium hydroxide solution or a potassium hydroxide solution to thereby soften the front side of the silicon wafer, and the temperature of the sodium hydroxide solution or the potassium hydroxide solution is 80 ° C, the texturing time is 10 min, after forming the pile structure of the pyramid structure of the suede, because sodium hydroxide or potassium hydroxide will not corrode the silicon nitride film on the back side of the silicon wafer in step b, because one side can be realized Cashmere
- the diffusion square resistance is 90-100 ⁇ / ⁇
- the front side of the silicon nitride film in step b will block the diffusion of phosphorus atoms on the four sides of the edge;
- step d using hydrofluoric acid to remove the silicon nitride film in step b and the phosphosilicate glass formed on the surface of the silicon wafer during diffusion in step d;
- the surface of the silicon wafer is deposited, specifically: a silicon nitride layer is grown on the front side of the silicon wafer by using PEVCD, the thickness of the silicon nitride layer is 75 nm, and the refractive index is 2.1;
- a conventional battery is prepared in this embodiment.
- a preparation process of a solar cell without etching treatment comprising the following steps:
- the surface of the silicon wafer is polished, and the surface of the silicon wafer is polished by using a mixture of sodium hydroxide, hydrogen peroxide and water;
- the silicon nitride film is plated on the back surface of the silicon wafer.
- the silicon nitride film is plated on the back surface of the silicon wafer, the four sides of the front surface of the silicon wafer are simultaneously coated with a silicon nitride film having a width of 1 mm, silicon nitride.
- the film thickness is controlled at 70nm-80nm. Since the silicon nitride film has non-conductivity, the silicon nitride film in this step can be used to prevent the phosphorus atoms from diffusing at the edges and prevent the edge N-type. The formation of the layer can achieve the effect of edge isolation, which can replace the etching process.
- the silicon nitride film can be used as protection to realize the single-side texturing of the silicon wafer, reducing the chemical liquid loss and reducing the production cost;
- the front side of the silicon wafer is subjected to texturing, and the silicon wafer is placed in a sodium hydroxide solution or a potassium hydroxide solution to thereby soften the front side of the silicon wafer, and the temperature of the sodium hydroxide solution or the potassium hydroxide solution is 80 ° C, the texturing time is 10 min, after forming the pile structure of the pyramid structure of the suede, because sodium hydroxide or potassium hydroxide will not corrode the silicon nitride film on the back side of the silicon wafer in step b, because one side can be realized Cashmere
- the front side of the silicon wafer is diffused, and the diffusion square resistance is 90-100 ⁇ / ⁇ .
- the silicon nitride film wound on the front side in step b blocks the diffusion of phosphorus atoms to the four edges of the silicon wafer;
- step d using hydrofluoric acid to remove the silicon nitride film in step b and the phosphosilicate glass formed on the surface of the silicon wafer during diffusion in step d;
- a film body on the surface of the silicon wafer specifically: first depositing a layer of aluminum oxide on the back side of the silicon wafer by atomic deposition technology, wherein the thickness of the aluminum oxide layer is between 5-10 nm, and the third layer is The deposition temperature of aluminum is 260-280 ° C, and the purpose of the aluminum oxide layer is to improve the back passivation effect and improve the battery conversion efficiency;
- a back silicon nitride layer is deposited on the aluminum oxide layer on the back surface of the silicon wafer by using PEVCD, wherein the back silicon nitride layer has a thickness of 150 nm and a refractive index of 2.06, and the back silicon nitride layer is designed to increase silicon.
- the reflectivity inside the sheet increases the absorption of light, enhances back passivation, and protects the aluminum oxide layer;
- a front silicon nitride layer is deposited on the front side of the silicon wafer by using PEVCD.
- the front silicon nitride layer has a thickness of 75 nm and a refractive index of 2.1. Due to the isolation of silicon nitride and aluminum oxide, the silver paste cannot be combined with The silicon wafer performs better ohmic contact, so it is necessary to punch the back surface by laser to penetrate the silicon nitride film and the aluminum oxide film, so that the silver paste and the silicon wafer printed in the next process are better ohmic. Contact; to obtain better conversion efficiency;
Abstract
本发明涉及制备太阳能电池的技术领域，尤其是一种无刻蚀处理的太阳能电池的制备工艺，包括以下步骤：a、硅片表面进行抛光；b、然后对硅片的背面进行镀氮化硅膜，在硅片背面镀氮化硅膜时,硅片正面的四个侧边边缘同时绕镀有氮化硅膜；c、接着对硅片的正面进行制绒；d、随后对硅片的正面进行扩散；e、利用氢氟酸去除步骤b中的氮化硅膜及步骤d中扩散时硅片表面形成的磷硅玻璃；f、硅片表面沉积膜体；g、印刷硅片正面和背面的电极；h、烧结，本发明利用氮化硅膜作为边缘隔离层，从而达到防止电池片边缘漏电的效果，另外，可以实现硅片的单面制绒，采用本工艺后，硅片的并联电阻得到明显提升，漏电流大大降低。
Description
本发明涉及制备太阳能电池的技术领域，尤其是一种无刻蚀处理的太阳能电池的制备工艺。
目前太阳能电池制备工艺的流程通常为清洗制绒、扩散、刻蚀、去磷硅玻璃、PEVCD、印刷及烧结等，刻蚀的主要作用为去除扩散后硅片四周的N型硅，防止漏电，在太阳能电池工艺中通常采用干法刻蚀工艺或湿法刻蚀工艺对硅片的边缘进行处理，而无论是干法刻蚀或湿法刻蚀均会损伤硅片，干法刻蚀所采用的等离体轰击硅片边缘，对硅片损伤大；湿法刻蚀受到环境湿度、药液浓度的影响，波动比较大，刻蚀效果会受到影响。
发明内容
本发明要解决的技术问题是：为了解决现有技术中采用刻蚀防止电池片边缘漏电，导致对电池片损伤的问题，现提供一种无刻蚀处理的太阳能电池的制备工艺。
本发明解决其技术问题所采用的技术方案是：一种无刻蚀处理的太阳能电池的制备工艺，包括以下步骤：
a、硅片表面进行抛光；
b、然后对硅片的背面进行镀氮化硅膜，在硅片背面镀氮化硅膜时,硅片正面的四个侧边边缘同时绕镀有氮化硅膜；
c、接着对硅片的正面进行制绒；
d、随后对硅片的正面进行扩散；
e、利用氢氟酸去除步骤b中的氮化硅膜及步骤d中扩散时硅片表面形成的磷硅玻璃；
f、硅片表面沉积膜体；
g、印刷硅片正面和背面的电极；
h、烧结。
具体地，步骤a中采用氢氧化钠、双氧水及水的混合液对硅片表面进行抛光。
进一步地，步骤b中的氮化硅膜膜厚控制在70nm-80nm。
具体地，步骤c中将硅片放入氢氧化钠溶液或氢氧化钾溶液内，从而对硅片的正面进行制绒，氢氧化钠溶液或氢氧化钾溶液的温度为80℃，制绒时间为10min。
进一步地，步骤d中扩散方阻为90-100Ω/□。
制备常规电池时，进一步地，步骤f具体为，在硅片正面采用PEVCD生长一层氮化硅层。
进一步地，步骤f中的氮化硅层的厚度为75nm，折射率为2.1。
制备PERC高效电池时，进一步地，步骤f具体为：
首先在硅片的背面沉积一层三氧化二铝层，其中，三氧化二铝层的厚度在5-10nm之间，三氧化二铝的的沉积温度为260-280℃；
接着在硅片背面的三氧化二铝层上利用PEVCD沉积一层背面氮化硅层，其中，背面氮化硅层的厚度为150nm，折射率为2.06；
然后利用PEVCD在硅片的正面沉积一层正面氮化硅层，其中，正面氮化硅层的厚度为75nm，折射率为2.1。
本发明的有益效果是：本发明的无刻蚀处理的太阳能电池的制备工艺利用氮化硅膜作为边缘隔离层，从而达到防止电池片边缘漏电的效果；另外，硅片在制绒时其背面采用氮化硅膜进行保护，可以实现硅片的单面制绒，减少化学药液损耗，降低生产成本，优化了整体工艺步骤，且不会对硅片有任何损伤，采用本工艺后，硅片的并联电阻得到明显提升，漏电流大大降低。
实施例1
一种无刻蚀处理的太阳能电池的制备工艺，包括以下步骤：
a、硅片表面进行抛光，采用氢氧化钠、双氧水及水的混合液对硅片表面进行抛光；
b、然后对硅片的背面进行镀氮化硅膜，在硅片背面镀氮化硅膜时,硅片正面的四个侧边同时绕镀有宽度在1mm的氮化硅膜，氮化硅膜膜厚控制在70nm-80nm，由于氮化硅膜具有不导电性，因此，利用此步骤中的氮化硅膜在正面的绕镀，一方面可阻止磷原子在边缘扩散，阻止边缘N型层的形成，达到边缘隔离的效果，可取代刻蚀工艺，另一方面利用氮化硅膜作为保护，可以实现硅片的单面制绒，减少化学药液损耗，降低生产成本；
c、接着对硅片的正面进行制绒，将硅片放入氢氧化钠溶液或氢氧化钾溶液内，从而对硅片的正面进行制绒，氢氧化钠溶液或氢氧化钾溶液的温度为80℃，制绒时间为10min，制绒后形成阵列分布的金字塔结构的绒面，由于氢氧化钠或氢氧化钾不会腐蚀步骤b中硅片背面的氮化硅膜，因可以实现单面制绒；
d、随后对硅片的正面进行扩散，扩散方阻为90-100Ω/□，步骤b中的正面绕镀的氮化硅膜会阻挡磷原子在边缘四边进行扩散；
e、利用氢氟酸去除步骤b中的氮化硅膜及步骤d中扩散时硅片表面形成的磷硅玻璃；
f、硅片表面沉积膜体，具体为：在硅片正面采用PEVCD生长一层氮化硅层，氮化硅层的厚度为75nm，折射率为2.1；
g、印刷硅片正面和背面的电极；
h、烧结。
本实施例中所制备的为常规电池。
实施例2
一种无刻蚀处理的太阳能电池的制备工艺，包括以下步骤：
a、硅片表面进行抛光，采用氢氧化钠、双氧水及水的混合液对硅片表面进行抛光；
b、然后对硅片的背面进行镀氮化硅膜，在硅片背面镀氮化硅膜时,硅片正面的四个侧边同时绕镀有宽度在1mm的氮化硅膜，氮化硅膜膜厚控制在70nm-80nm，由于氮化硅膜具有不导电性，因此，利用此步骤中的氮化硅膜在正面的绕镀，一方面可阻止磷原子在边缘扩散，阻止边缘N型层的形成，达到边缘隔离的效果，可取代刻蚀工艺，另一方面利用氮化硅膜作为保护，可以实现硅片的单面制绒，减少化学药液损耗，降低生产成本；
c、接着对硅片的正面进行制绒，将硅片放入氢氧化钠溶液或氢氧化钾溶液内，从而对硅片的正面进行制绒，氢氧化钠溶液或氢氧化钾溶液的温度为80℃，制绒时间为10min，制绒后形成阵列分布的金字塔结构的绒面，由于氢氧化钠或氢氧化钾不会腐蚀步骤b中硅片背面的氮化硅膜，因可以实现单面制绒；
d、随后对硅片的正面进行扩散，扩散方阻为90-100Ω/□，步骤b中正面绕镀的氮化硅膜会阻挡磷原子向硅片四边边缘进行扩散；
e、利用氢氟酸去除步骤b中的氮化硅膜及步骤d中扩散时硅片表面形成的磷硅玻璃；
f、硅片表面沉积膜体，具体为：首先在硅片的背面利用原子沉积技术沉积一层三氧化二铝层，其中，三氧化二铝层的厚度在5-10nm之间，三氧化二铝的的沉积温度为260-280℃，三氧化二铝层的目的在于提高背面钝化效果，提升电池转换效率；
接着在硅片背面的三氧化二铝层上利用PEVCD沉积一层背面氮化硅层，其中，背面氮化硅层的厚度为150nm，折射率为2.06，背面氮化硅层的目的在于增加硅片内部的反射率，增加光的吸收，增强背面钝化，同时保护三氧化二铝层；
然后利用PEVCD在硅片的正面沉积一层正面氮化硅层，其中，正面氮化硅层的厚度为75nm，折射率为2.1，由于氮化硅和三氧化二铝的隔离，银浆无法与硅片进行较好的欧姆接触，因此需要通过激光对背面进行打孔处理，打穿氮化硅膜和三氧化二铝膜，使得下道工序所印刷的银浆与硅片进行较好的欧姆接触；以此获得较好的转化效率；
g、印刷硅片正面和背面的电极；
h、烧结。
本实施例制备的为高效PERC电池。
上述依据本发明的理想实施例为启示，通过上述的说明内容，相关工作人员完全可以在不偏离本项发明技术思想的范围内，进行多样的变更以及修改。本项发明的技术性范围并不局限于说明书上的内容，必须要根据权利要求范围来确定其技术性范围。
Claims (8)
- 一种无刻蚀处理的太阳能电池的制备工艺，其特征在于：包括以下步骤：a、硅片表面进行抛光；b、然后对硅片的背面进行镀氮化硅膜，在硅片背面镀氮化硅膜时,硅片正面的四个侧边边缘同时绕镀有氮化硅膜；c、接着对硅片的正面进行制绒；d、随后对硅片的正面进行扩散；e、利用氢氟酸去除步骤b中的氮化硅膜及步骤d中扩散时硅片表面形成的磷硅玻璃；f、硅片表面沉积膜体；g、印刷硅片正面和背面的电极；h、烧结。
- 根据权利要求1所述的无刻蚀处理的太阳能电池的制备工艺，其特征在于：步骤a中采用氢氧化钠、双氧水及水的混合液对硅片表面进行抛光。
- 根据权利要求1所述的无刻蚀处理的太阳能电池的制备工艺，其特征在于：步骤b中的氮化硅膜膜厚控制在70nm-80nm。
- 根据权利要求1所述的无刻蚀处理的太阳能电池的制备工艺，其特征在于：步骤c中将硅片放入氢氧化钠溶液或氢氧化钾溶液内，从而对硅片的正面进行制绒，氢氧化钠溶液或氢氧化钾溶液的温度为80℃，制绒时间为10min。
- 根据权利要求1所述的无刻蚀处理的太阳能电池的制备工艺，其特征在于：步骤d中扩散方阻为90-100Ω/□。
- 根据权利要求1所述的无刻蚀处理的太阳能电池的制备工艺，其特征在于：步骤f具体为，在硅片正面采用PEVCD生长一层氮化硅层。
- 根据权利要求6所述的无刻蚀处理的太阳能电池的制备工艺，其特征在 于：步骤f中的氮化硅层的厚度为75nm，折射率为2.1。
- 根据权利要求1所述的无刻蚀处理的太阳能电池的制备工艺，其特征在于：步骤f具体为：首先在硅片的背面沉积一层三氧化二铝层，其中，三氧化二铝层的厚度在5-10nm之间，三氧化二铝的的沉积温度为260-280℃；接着在硅片背面的三氧化二铝层上利用PEVCD沉积一层背面氮化硅层，其中，背面氮化硅层的厚度为150nm，折射率为2.06；然后利用PEVCD在硅片的正面沉积一层正面氮化硅层，其中，正面氮化硅层的厚度为75nm，折射率为2.1。
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