WO2019090837A1 - 双面显示器及其制作方法 - Google Patents

双面显示器及其制作方法 Download PDF

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Publication number
WO2019090837A1
WO2019090837A1 PCT/CN2017/112570 CN2017112570W WO2019090837A1 WO 2019090837 A1 WO2019090837 A1 WO 2019090837A1 CN 2017112570 W CN2017112570 W CN 2017112570W WO 2019090837 A1 WO2019090837 A1 WO 2019090837A1
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liquid crystal
double
layer
crystal layer
display panel
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French (fr)
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徐超
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • G09F9/335—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes being organic light emitting diodes [OLED]
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/35—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being liquid crystals

Definitions

  • the invention relates to a liquid crystal display panel technology, in particular to a double-sided display and a manufacturing method thereof.
  • OLED Organic Light-Emitting Diode
  • TFT-LCD Thin Film Transistor, Liquid Crystal Display
  • the biggest advantage of OLED display is that it can produce large size, ultra-thin, flexible, transparent and double-sided display devices.
  • the double-sided display function has become a major feature of the new generation of electronic products, especially display products in some public places.
  • the structure is relatively heavy, the process is relatively complicated, the manufacturing cost is high, and the lightness and highness that do not meet the consumer's expectations are high. Cost-effective requirements.
  • the present invention provides a double-sided display and a manufacturing method thereof, which make the structure and manufacturing process of the double-sided display simple and low in cost.
  • the present invention provides a double-sided display comprising an organic electroluminescent display panel, the encapsulation layer of the organic electroluminescent display panel is provided with a liquid crystal layer, and a cover glass is disposed on the liquid crystal layer, and the liquid crystal layer is An alignment film is disposed between the encapsulation layers, and a transparent electrode layer is disposed between the cover glass and the liquid crystal layer. By controlling the voltage of the transparent electrode layer, the deflection of the liquid crystal molecules of the liquid crystal layer is controlled to realize single or double-sided display.
  • anode and the cathode of the organic electroluminescence display panel are made of a transparent conductive material.
  • the substrate of the organic electroluminescent display panel faces away from a side surface of the alignment film to And a lower polarizer and an upper polarizer are respectively disposed on a side surface of the cover glass facing away from the transparent electrode layer.
  • the polarization directions of the lower polarizer and the upper polarizer are perpendicular to each other.
  • a plastic frame is further disposed between the alignment film and the transparent electrode layer, and the liquid crystal layer is disposed in the plastic frame.
  • the invention also provides a method for manufacturing a double-sided display, comprising the following steps:
  • a transparent electrode layer is plated between the cover glass and the liquid crystal layer.
  • the anode and the cathode of the organic electroluminescence display panel are made of a transparent conductive material.
  • the cover glass is attached to the liquid crystal layer, it is cured by ultraviolet light.
  • the polarization directions of the lower polarizer and the upper polarizer are perpendicular to each other.
  • the anode is an indium tin oxide semiconductor transparent conductive film or an indium zinc oxide semiconductor transparent conductive film; the cathode is one of Mg or Ag.
  • the invention can produce the alignment film, the liquid crystal layer, the transparent electrode layer and the cover glass on the organic electroluminescence display panel, and control the voltage of the transparent electrode layer to control the deflection of the liquid crystal molecules.
  • the single-sided and double-sided display functions not only have a simple structure and a simple manufacturing process, but also make full use of the manufacturing process of the LCD, so that the cost of the double-sided display is low.
  • FIG. 1 is a schematic view showing the basic structure of an organic electroluminescence display panel of the present invention
  • FIG. 2 is a schematic view showing the structure of an alignment film formed on an encapsulation layer of the present invention
  • FIG. 3 is a schematic view showing the structure of a plastic frame and a liquid crystal layer formed on an alignment film of the present invention
  • Fig. 5 is a schematic structural view of an organic electroluminescence display panel of the present invention.
  • a double-sided display of the present invention includes an organic electroluminescent display panel 1.
  • the organic electroluminescent display panel 1 can adopt the structure of the organic electroluminescent display panel 1 of the prior art.
  • the anode 12 and the cathode 13 of the organic electroluminescent display panel 1 are made of a transparent conductive material, thereby realizing double-sided illumination of the organic electroluminescent display panel 1;
  • a liquid crystal layer 2 is disposed on the encapsulation layer 11 of the light-emitting display panel 1, and a cover glass 5 is disposed on the liquid crystal layer 2.
  • An alignment film 3 is disposed between the liquid crystal layer 2 and the encapsulation layer 11, and the cover glass 5 is disposed.
  • a transparent electrode layer 4 is disposed between the liquid crystal layer 2, and the voltage of the transparent electrode layer 4 is controlled to control the deflection of the liquid crystal molecules of the liquid crystal layer 2 to realize single or double-sided display; the alignment film 3 and the transparent electrode layer 4 There is also a plastic frame 6 disposed in the plastic frame 6; on the side surface of the substrate 14 of the organic electroluminescent display panel 1 facing away from the alignment film 3 and the cover glass 5 facing away from the transparent electrode layer 4 a lower polarizer 7 and upper side are respectively provided on one side surface Polarizer 8.
  • the invention realizes the single-sided display function by controlling the voltage of the transparent electrode to cause the liquid crystal layer 2 to be deflected under the control of the cathode 13 and the transparent electrode layer 4.
  • the control of the transparent electrode can be performed by using the prior art. It is not specifically limited herein, and it is only necessary to ensure that a voltage is input to the transparent electrode layer, for example, by controlling the transparent motor layer 4 in the existing liquid crystal display.
  • the polarization directions of the lower polarizer 7 and the upper polarizer 8 are perpendicular to each other.
  • the anode 12 is made of an indium tin oxide semiconductor transparent conductive film or indium zinc oxide.
  • the semiconductor transparent conductive film; the cathode 13 is one of Mg or Ag.
  • the organic electroluminescence display panel 1 includes at least a substrate 14, a thin film transistor 15, an anode 12, a pixel defining layer (not shown), an organic electroluminescent device 16, and a cathode 13.
  • the thin film transistor 15 may include a buffer layer 141, a polysilicon layer 142, a gate insulating layer 143, a gate electrode 144, an interlayer insulating layer 145, a source electrode 146, a drain electrode 147, and a flat layer 148 which are sequentially disposed, but the present invention
  • the structure of the thin film transistor is not limited thereto, and it may be another type of thin film transistor such as an amorphous silicon thin film transistor or a metal oxide thin film transistor.
  • the anode 12 is in contact with the drain electrode 147 through the hole; the pixel defining layer 149 is disposed on the flat layer 148 and the anode 12; the organic electroluminescent device 16 is disposed on the anode 12; and the cathode 13 is disposed on the organic electroluminescent device 16.
  • the organic electroluminescent device 16 includes, in order from the anode 12 to the cathode, a hole injection layer (HIL) 161, a hole transport layer (HTL) 162, an organic light emitting layer (EML) 163, an electron transport layer (ETL) 164, and Electron injection layer (EIL) 165; however, the organic electroluminescent device 16 of the present invention is not limited to the structure herein.
  • HIL hole injection layer
  • HTL hole transport layer
  • EML organic light emitting layer
  • ETL electron transport layer
  • EIL Electron injection layer
  • a method for manufacturing a double-sided display of the present invention comprises the following steps:
  • the organic electroluminescent display panel 1 is fabricated; the fabrication of the organic electroluminescent display panel 1 can be performed by using the prior art, and is not specifically limited herein;
  • the anode 12 and the cathode 13 of the organic electroluminescence display panel 1 may be made of a transparent conductive material.
  • an alignment film 3 is formed on the encapsulation layer 11 of the organic electroluminescence display panel 1. Specifically, the alignment film 3 is formed by pre-baking after applying a dope.
  • a plastic frame 6 is formed on the alignment film 3; specifically, the plastic frame 6 is obtained by a conventional molding process, for example, coating.
  • the liquid crystal layer 2 is formed in the plastic frame 6. Specifically, the liquid crystal layer 2 is obtained by a conventional liquid crystal dropping method.
  • the cover glass 5 is bonded to the liquid crystal layer 2; specifically, the cover glass 5 is bonded to the liquid crystal layer 2, and then cured by ultraviolet light.
  • the cover glass 5 is formed by plating a transparent electrode layer 4 between the cover glass 5 and the liquid crystal layer 2; specifically, the existing transparent electrode is used on the surface of the cover glass 5 opposite to the liquid crystal layer 2.
  • the layer 4 is produced by, for example, a transparent electrode layer 4 is formed by vapor deposition; and the cover glass 5 is a transparent glass substrate or a resin substrate.
  • a polarizer 7 is attached, respectively.
  • the upper polarizer 8; the polarization directions of the lower polarizer 7 and the upper polarizer 8 are perpendicular to each other.
  • the fabrication of the organic electroluminescent display panel 1 generally includes:
  • step one providing a substrate 14.
  • the substrate 14 may be, for example, a transparent glass substrate or a resin substrate, but the present invention is not limited thereto.
  • Step 2 A buffer layer 141 is formed on the substrate 14. Further, as another embodiment of the present invention, step two may be omitted.
  • Step 3 A polysilicon layer 142 is formed on the buffer layer 141.
  • the polysilicon layer 142 is directly formed on the substrate 14.
  • the polysilicon layer 142 is formed by specifically forming an amorphous silicon layer on the buffer layer 141 by plasma enhanced chemical vapor deposition (PECVD); then, recrystallizing the amorphous silicon layer by using excimer laser
  • PECVD plasma enhanced chemical vapor deposition
  • the polysilicon layer 142 includes an undoped layer 1421, a heavily doped layer 1422 disposed on both sides of the undoped layer 1421, and a lightly doped layer 1423 disposed between the heavily doped layer 1422 and the undoped layer 1421.
  • the lightly doped layer 1423 is an N-type lightly doped layer
  • the heavily doped layer 1422 is an N-type heavily doped layer
  • the lightly doped layer 1423 may also be a P-type lightly doped layer
  • the hetero-layer, heavily doped layer 1422 may also be a P-type heavily doped layer.
  • Step 4 A gate insulating layer 143 is formed on the polysilicon layer 142 and the buffer layer 141. When the second step is omitted, the gate insulating layer 143 is formed on the polysilicon layer 142 and the substrate 14.
  • Step 5 forming a gate 144 on the polysilicon layer 142 on the gate insulating layer 143.
  • Step 6 forming an interlayer insulating layer 145 on the gate electrode 144 and the gate insulating layer 143.
  • Step 7 A via hole is formed in the interlayer insulating layer 145 to form the interlayer insulating layer 145 and the gate insulating layer 143 to expose the heavily doped layer 1422, respectively.
  • Step 8 Forming a source 146 forming a filled via in contact with the corresponding heavily doped layer 1422 and a drain 147 filling the via in contact with the corresponding heavily doped layer 1422 are formed on the interlayer insulating layer 145.
  • Step 9 A flat layer 148 is formed on the interlayer insulating layer 145, the source 146, and the drain 147.
  • Step 10 A via is formed in the planarization layer 148 that exposes the drain 147.
  • the above steps 2 to 10 complete the fabrication process of the thin film transistor 15 according to the embodiment of the present invention. It should be noted that the above steps of fabricating the thin film transistor are adaptively adjusted according to thin film transistors having different structures.
  • Step 11 An anode 12 is formed on the planarization layer 148 to form a filled via to contact the exposed drain 147.
  • the anode 12 is transparent.
  • Step 12 A pixel defining layer 149 is formed on the flat layer 148 and the anode 12.
  • Step 13 Forming a via hole in the pixel defining layer 149, the via hole exposing the anode 12.
  • Step 14 Forming an organic electroluminescent device 16 on the exposed anode 12.
  • the organic electroluminescent device 16 includes, in order from the anode 12 to the cathode 13, a hole injection layer (HIL) 161, a hole transport layer (HTL) 162, an organic light emitting layer (EML) 163, and an electron transport layer. (ETL) 164 and electron injection layer (EIL) 165; however, the organic electroluminescent device 16 of the present invention is not limited to the structure herein.
  • Step 15 A cathode 13 is formed on the organic electroluminescent device 16.
  • the cathode 13 is light transmissive.
  • the anode 12 is made of an indium tin oxide semiconductor transparent conductive film or an indium zinc oxide semiconductor transparent conductive film; the cathode 13 is one of Mg or Ag.
  • Step 16 A package layer 11 is formed on the cathode 13 and the pixel defining layer 149.
  • the invention realizes the single-sided display function by controlling the voltage of the transparent electrode to make the liquid crystal layer deflect under the control of the cathode 13 and the transparent electrode layer 4.
  • the control of the transparent electrode can be performed by using the prior art. This is not specifically limited, and it is only necessary to ensure that a voltage is input to the transparent electrode.

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  • Crystallography & Structural Chemistry (AREA)
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Abstract

本发明提供了一种双面显示器，包括有机电致发光显示面板，所述有机电致发光显示面板的封装层上设有液晶层、在液晶层上设有盖板玻璃，所述液晶层与封装层之间设置有配向膜，所述盖板玻璃与液晶层之间设置有透明电极层，通过控制透明电极层的电压，从而控制液晶层液晶分子的偏转，实现单或双面显示。本发明还提供了一种双面显示器的制作方法。与现有技术相比，通过在有机电致发光显示面板上制作配向膜、液晶层、透明电极层、盖板玻璃，对透明电极层的电压控制，实现控制液晶分子的偏转，即可实现单、双面显示功能，不仅结构以及制作工艺简单，还充分利用了LCD的制作工序，使得双面显示器的成本低。

Description

双面显示器及其制作方法 技术领域
本发明涉及一种液晶显示面板技术，特别是一种双面显示器及其制作方法。
背景技术
OLED(Organic Light-Emitting Diode，有机电致发光)显示器具有亮度高、响应快、能耗低、可弯曲等一列优点，被广泛认可为下一代显示技术的焦点。OLED显示器与TFT-LCD(Thin Film Transistor，薄膜晶体管，Liquid Crystal Display液晶显示器)相比，最大的优势就是可制备大尺寸、超薄、柔性、透明及双面显示器件。
随着电子产品的形式的渐趋多样化，双面显示功能成为新一代电子产品的主要特色，特别是一些公用场所的显示用品。然而目前的双面OLED显示装置大多只是将两个独立的OLED显示器件进行背靠背组装，以实现双面显示，结构比较厚重，工艺相对复杂，制作成本较高，不符合消费者期望的轻薄与高性价比的要求。
发明内容
为克服现有技术的不足，本发明提供一种双面显示器及其制作方法，使得双面显示器的结构、制作工艺简单，而且成本低。
本发明提供了一种双面显示器，包括有机电致发光显示面板，所述有机电致发光显示面板的封装层上设有液晶层、在液晶层上设有盖板玻璃，所述液晶层与封装层之间设置有配向膜，所述盖板玻璃与液晶层之间设置有透明电极层，通过控制透明电极层的电压，从而控制液晶层液晶分子的偏转，实现单或双面显示。
进一步地，所述有机电致发光显示面板的阳极和阴极采用透明导电材料制成。
进一步地，所述有机电致发光显示面板的基板背离配向膜的一侧表面上以 及盖板玻璃背离透明电极层的一侧表面上分别设有下偏光片和上偏光片。
进一步地，所述下偏光片和上偏光片的偏振方向相互垂直。
进一步地，所述配向膜与透明电极层之间还设有胶框，所述液晶层设于胶框中。
本发明还提供了一种双面显示器的制作方法，包括如下步骤：
制作有机电致发光显示面板；
在有机电致发光显示面板的封装层上制作配向膜；
在配向膜上制作胶框；
在胶框中制作液晶层；
在液晶层上贴合盖板玻璃；
在有机电致发光显示面板的基板背离配向膜的一侧表面上以及盖板玻璃背离透明电极层的一侧表面上分别设有贴附下偏光片和上偏光片；
所述盖板玻璃与液晶层之间镀有透明电极层。
进一步地，在制作有机电致发光显示面板时，有机电致发光显示面板的阳极和阴极采用透明导电材料制成。
进一步地，在液晶层上贴合盖板玻璃后通过紫外光进行固化。
进一步地，所述下偏光片和上偏光片的偏振方向相互垂直。
进一步地，所述阳极采用铟锡氧化物半导体透明导电膜或铟锌氧化物半导体透明导电膜；所述阴极采用Mg或Ag中的一种。
本发明与现有技术相比，通过在有机电致发光显示面板上制作配向膜、液晶层、透明电极层、盖板玻璃，对透明电极层的电压控制，实现控制液晶分子的偏转，即可实现单、双面显示功能，不仅结构以及制作工艺简单，还充分利用了LCD的制作工序，使得双面显示器的成本低。
附图说明
图1是本发明有机电致发光显示面板的基本结构示意图；
图2是本发明在封装层上制作配向膜的结构示意图；
图3是本发明在配向膜上制作胶框以及液晶层的结构示意图；
图4是本发明制作盖板玻璃以及成盒的结构示意图；
图5是本发明有机电致发光显示面板的结构示意图。
具体实施方式
下面结合附图和实施例对本发明作进一步详细说明。
如图4所示，本发明的一种双面显示器，包括有机电致发光显示面板1，所述有机电致发光显示面板1可采用现有技术中的有机电致发光显示面板1的结构，在此不做具体限定，其中，所述有机电致发光显示面板1的阳极12和阴极13采用透明导电材料制成，从而实现有机电致发光显示面板1的双面发光；所述有机电致发光显示面板1的封装层11上设有液晶层2、在液晶层2上设有盖板玻璃5，所述液晶层2与封装层11之间设置有配向膜3，所述盖板玻璃5与液晶层2之间设置有透明电极层4，通过控制透明电极层4的电压，从而控制液晶层2液晶分子的偏转，实现单或双面显示；所述配向膜3与透明电极层4之间还设有胶框6，所述液晶层2设于胶框6中；在有机电致发光显示面板1的基板14背离配向膜3的一侧表面上以及盖板玻璃5背离透明电极层4的一侧表面上分别设有下偏光片7和上偏光片8。
本发明通过控制透明电极的电压，使液晶层2在阴极13和透明电极层4的控制下发生偏转，从而实现单双面显示功能，此处对透明电极的的控制可采用现有技术进行，在此不做具体限定，仅需保证对透明电极层输入一电压即可，例如通过现有液晶显示器中对透明电机层4进行控制。
在本发明中，所述下偏光片7和上偏光片8的偏振方向相互垂直。
在本发明中，所述阳极12采用铟锡氧化物半导体透明导电膜或铟锌氧化 物半导体透明导电膜；所述阴极13采用Mg或Ag中的一种。
本发明中，如图5所示，有机电致发光显示面板1至少包括基板14、薄膜晶体管15、阳极12、像素限定层(图中未示出)、有机电致发光器件16和阴极13。
所述薄膜晶体管15可包括依次设置的缓冲层141、多晶硅层142、栅极绝缘层143、栅极144、层间绝缘层145、源极146、漏极147、平坦层148，但本发明的薄膜晶体管的结构并不限于此，其还可以是非晶硅薄膜晶体管、金属氧化物薄膜晶体管等其他类型的薄膜晶体管。
阳极12经过孔与漏极147接触；像素限定层149设置于平坦层148、阳极12上；有机电致发光器件16设置于阳极12上；阴极13设置于有机电致发光器件16上。
所述有机电致发光器件16从阳极12到阴极顺序包括：空穴注入层(HIL)161、空穴传输层(HTL)162、有机发光层(EML)163、电子传输层(ETL)164以及电子注入层(EIL)165；但本发明的有机电致发光器件16并不限制于这里的结构。
本发明的一种双面显示器的制作方法，包括如下步骤：
如图1和图2所示，制作有机电致发光显示面板1；所述有机电致发光显示面板1的制作可采用现有技术进行制作，在此不做具体限定；其中仅需保证，在制作有机电致发光显示面板1时，有机电致发光显示面板1的阳极12和阴极13采用透明导电材料制成即可。
如图2所示，在有机电致发光显示面板1的封装层11上制作配向膜3；具体地，配向膜3通过涂布配液后进行预烘干形成。
如图3所示，在配向膜3上制作胶框6；具体地，胶框6通过现有胶框的制作方式得到，例如涂布。
如图3所示，在胶框6中制作液晶层2；具体地，液晶层2通过现有的液晶滴下方式得到。
如图4所示，在液晶层2上贴合盖板玻璃5；具体地，在液晶层2上贴合盖板玻璃5后通过紫外光进行固化。
所述盖板玻璃5的制作包括在盖板玻璃5与液晶层2之间镀有透明电极层4；具体地，在盖板玻璃5与液晶层2相对的一侧表面采用现有的透明电极层4制作方式制作得到，例如透明电极层4采用蒸镀的方式制作得到；所述盖板玻璃5为透明的玻璃基板或树脂基板。
如图4所示，在有机电致发光显示面板1的基板14背离配向膜3的一侧表面上以及盖板玻璃5背离透明电极层4的一侧表面上分别设有贴附下偏光片7和上偏光片8；所述下偏光片7和上偏光片8的偏振方向相互垂直。
本发明中，有机电致发光显示面板1的制作一般包括：
如图5所示，步骤一：提供一基板14。这里，基板14可例如是透明的玻璃基板或者树脂基板，但本发明并不限制于此。
步骤二：在基板14上制作形成缓冲层141。此外，作为本发明的另一实施方式，步骤二可以被省略。
步骤三：在缓冲层141上制作形成多晶硅层142。作为本发明的另一实施方式，当步骤二被省略时，在基板14上直接制作形成多晶硅层142。多晶硅层142的形成方式具体为：利用等离子体增强化学气相沉积法(PECVD)在缓冲层141上制作形成非晶硅层；接着，以利用准分子镭射使所述非晶硅层再结晶，从而生成多晶硅层142。此外，多晶硅层142包括未掺杂层1421、分别设置于未掺杂层1421两侧的重掺杂层1422及设置于重掺杂层1422和未掺杂层1421之间的轻掺杂层1423。这里，轻掺杂层1423为N型轻掺杂层，重掺杂层1422为N型重掺杂层，但本发明并不限制于此，例如轻掺杂层1423也可以为P型轻掺杂层，重掺杂层1422也可以为P型重掺杂层。
步骤四：在多晶硅层142和缓冲层141上制作形成栅极绝缘层143。当步骤二被省略时，在多晶硅层142和基板14上制作形成栅极绝缘层143。
步骤五：在栅极绝缘层143上制作形成位于多晶硅层142上的栅极144。
步骤六：在栅极144和栅极绝缘层143上制作形成层间绝缘层145。
步骤七：在层间绝缘层145中制作形成贯穿层间绝缘层145和栅极绝缘层143的过孔，以分别将重掺杂层1422暴露。
步骤八：在层间绝缘层145上制作形成填充过孔与对应的重掺杂层1422接触的源极146和填充过孔与对应的重掺杂层1422接触的漏极147。
步骤九：在层间绝缘层145、源极146和漏极147上制作形成平坦层148。
步骤十：在平坦层148中制作形成过孔，该过孔将漏极147暴露。
上述步骤二至步骤十完成了根据本发明的实施例的薄膜晶体管15的制作过程。需要说明的是，上述制作薄膜晶体管的步骤根据不同结构的薄膜晶体管而被适应性调整。
步骤十一：在平坦层148上制作形成填充过孔而与暴露的漏极147接触的阳极12。阳极12是透明的。
步骤十二：在平坦层148、阳极12上形成像素限定层149。
步骤十三：在像素限定层149中制作形成过孔，该过孔暴露阳极12。
步骤十四：在暴露的阳极12上制作形成有机电致发光器件16。在本实施例中，有机电致发光器件16从阳极12到阴极13顺序包括：空穴注入层(HIL)161、空穴传输层(HTL)162、有机发光层(EML)163、电子传输层(ETL)164以及电子注入层(EIL)165；但本发明的有机电致发光器件16并不限制于这里的结构。
步骤十五：在有机电致发光器件16上制作形成阴极13。这里，阴极13是透光的。
所述阳极12采用铟锡氧化物半导体透明导电膜或铟锌氧化物半导体透明导电膜；所述阴极13采用Mg或Ag中的一种。
步骤十六：在阴极13以及像素限定层149上制作封装层11。
最终完成有机电致发光显示面板1的制作。
本发明通过控制透明电极的电压，使液晶层在阴极13和透明电极层4的控制下发生偏转，从而实现单双面显示功能，此处对透明电极的的控制可采用现有技术进行，在此不做具体限定，仅需保证对透明电极输入一电压即可。
虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。

Claims (14)

  1. 一种双面显示器，包括有机电致发光显示面板，其中：所述有机电致发光显示面板的封装层上设有液晶层、在液晶层上设有盖板玻璃，所述液晶层与封装层之间设置有配向膜，所述盖板玻璃与液晶层之间设置有透明电极层，通过控制透明电极层的电压，从而控制液晶层液晶分子的偏转，实现单或双面显示。
  2. 根据权利要求1所述的双面显示器，其中：所述有机电致发光显示面板的阳极和阴极采用透明导电材料制成。
  3. 根据权利要求1所述的双面显示器，其中：所述有机电致发光显示面板的基板背离配向膜的一侧表面上以及盖板玻璃背离透明电极层的一侧表面上分别设有下偏光片和上偏光片。
  4. 根据权利要求2所述的双面显示器，其中：所述有机电致发光显示面板的基板背离配向膜的一侧表面上以及盖板玻璃背离透明电极层的一侧表面上分别设有下偏光片和上偏光片。
  5. 根据权利要求3所述的双面显示器，其中：所述下偏光片和上偏光片的偏振方向相互垂直。
  6. 根据权利要求4所述的双面显示器，其中：所述下偏光片和上偏光片的偏振方向相互垂直。
  7. 根据权利要求1所述的双面显示器，其中：所述配向膜与透明电极层之间还设有胶框，所述液晶层设于胶框中。
  8. 一种双面显示器的制作方法，其中：包括如下步骤：
    制作有机电致发光显示面板；
    在有机电致发光显示面板的封装层上制作配向膜；
    在配向膜上制作胶框；
    在胶框中制作液晶层；
    在液晶层上贴合盖板玻璃；
    在有机电致发光显示面板的基板背离配向膜的一侧表面上以及盖板玻璃背离透明电极层的一侧表面上分别设有贴附下偏光片和上偏光片；
    所述盖板玻璃与液晶层之间镀有透明电极层。
  9. 根据权利要求8所述的双面显示器的制作方法，其中：在制作有机电致发光显示面板时，有机电致发光显示面板的阳极和阴极采用透明导电材料制成。
  10. 根据权利要求8所述的双面显示器的制作方法，其中：在液晶层上贴合盖板玻璃后通过紫外光进行固化。
  11. 根据权利要求9所述的双面显示器的制作方法，其中：在液晶层上贴合盖板玻璃后通过紫外光进行固化。
  12. 根据权利要求8所述的双面显示器的制作方法，其中：所述下偏光片和上偏光片的偏振方向相互垂直。
  13. 根据权利要求9所述的双面显示器的制作方法，其中：所述下偏光片和上偏光片的偏振方向相互垂直。
  14. 根据权利要求9所述的双面显示器的制作方法，其中：所述阳极采用铟锡氧化物半导体透明导电膜或铟锌氧化物半导体透明导电膜；所述阴极采用Mg或Ag中的一种。
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