WO2019090733A1 - Oled显示器件的像素结构、制备方法及oled显示结构 - Google Patents

Oled显示器件的像素结构、制备方法及oled显示结构 Download PDF

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Publication number
WO2019090733A1
WO2019090733A1 PCT/CN2017/110560 CN2017110560W WO2019090733A1 WO 2019090733 A1 WO2019090733 A1 WO 2019090733A1 CN 2017110560 W CN2017110560 W CN 2017110560W WO 2019090733 A1 WO2019090733 A1 WO 2019090733A1
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Prior art keywords
sub
pixel region
transport layer
hole transport
oled
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English (en)
French (fr)
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刘孟宇
秦嬉嬉
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Shenzhen Royole Technologies Co Ltd
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Shenzhen Royole Technologies Co Ltd
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Priority to PCT/CN2017/110560 priority Critical patent/WO2019090733A1/zh
Priority to CN201780095840.2A priority patent/CN111201627A/zh
Publication of WO2019090733A1 publication Critical patent/WO2019090733A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a pixel structure, a preparation method, and an OLED display structure of an OLED display device.
  • OLED Organic Light-Emitting Diode
  • RGB red, green and blue
  • AMOLED active matrix organic electro-optical display
  • the white OLED plus color filter OLED screen can provide higher resolution, but usually 2/3 of the light intensity is absorbed by the filter, so the overall power consumption is high, failing to Mass production in small and medium size AMOLED applications.
  • the embodiment of the invention discloses a pixel structure, a preparation method and an OLED display structure of an OLED display device, which have high resolution and high luminous efficiency at the same time.
  • An OLED pixel structure is divided into a first sub-pixel region, a second sub-pixel region and a third sub-pixel region; a hole transport layer is formed between the anode and the cathode of the OLED pixel structure and the first a single primary color hole transport layer, a second single primary color filter and a third single primary color filter are formed on a side of the cathode away from the anode; wherein the first single primary color hole transport layer is formed in the The hole transport layer corresponds to a position of the first sub-pixel region, the second single-primary color filter is formed at a position corresponding to the second sub-pixel region, and the third single-primary color filter is formed in a corresponding The position of the third sub-pixel region.
  • a method for preparing an OLED pixel structure comprising the steps of: preparing an anode, wherein the anode is divided into a first sub-pixel region, a second sub-pixel region and a third sub-pixel region; and evaporation is formed on the anode to form an anode a hole transport layer; corresponding to the first sub-pixel in the hole transport layer a position of the region is evaporated to form a first single primary color hole transport layer; a cathode is prepared; and a second single primary color filter is formed on the cathode corresponding to a position distribution of the second sub-pixel region and the third sub-pixel region Sheet and third single primary color filter.
  • An OLED display structure comprising a plurality of pixels arranged in rows and columns, the pixels having a pixel structure as described above.
  • the OLED pixel structure, the preparation method and the OLED display structure of the present invention form a single primary color light by vapor deposition only at a position corresponding to the first sub-pixel region, and form a single primary color light through the filter in the second and third sub-pixel regions. Therefore, the process yield is high, and the OLED display structure has higher light extraction efficiency, higher resolution, and lower cost.
  • FIG. 1 is a flow chart of a method for fabricating an OLED pixel structure according to an embodiment of the invention.
  • FIG. 2 to 9 are schematic views showing a method of fabricating an OLED pixel structure according to a first preferred embodiment of the present invention.
  • FIG. 2 is a schematic cross-sectional view of a substrate provided
  • FIG. 3 is a schematic view showing an anode formed on a substrate
  • FIG. 5 is a schematic view showing formation of a hole transport layer and a first single primary color hole transport layer
  • FIG. 6 is a schematic view showing formation of a white light layer
  • FIG. 7 is a view showing formation of an electron transport layer and an electron injection layer.
  • FIG. 8 is a schematic view showing the formation of a cathode
  • FIG. 9 is a schematic view showing an OLED pixel structure obtained by forming a second single primary color filter and a third single primary color filter.
  • FIG. 10 is a schematic diagram of a OLED pixel structure according to another embodiment of the present invention.
  • FIG. 11 is a schematic diagram of a OLED pixel structure according to still another embodiment of the present invention.
  • FIG. 12 is a plan view of an OLED display structure of an OLED pixel structure based on the above embodiment. schematic diagram.
  • FIG. 1 is a flow chart of a method for fabricating an OLED pixel structure of the present invention.
  • the method for preparing an OLED pixel structure of the present invention mainly includes the following processes:
  • Step 101 providing a substrate, and defining a first sub-pixel region, a second sub-pixel region and a third sub-pixel region on the substrate;
  • Step 102 forming an anode on a substrate corresponding to a position of the first sub-pixel region, the second pixel region, and the third sub-pixel region;
  • Step 103 sequentially depositing a hole injection layer (HIL) on the anode;
  • HIL hole injection layer
  • Step 104 forming a hole transport layer (HTL) on the HIL layer, and forming a first single primary color HTL layer by vapor deposition at a position corresponding to the first pixel region of the HTL layer;
  • HTL hole transport layer
  • Step 105 forming a white light layer on the HTL layer corresponding to the positions of the second sub-pixel region and the third sub-pixel region and the first single primary color HTL layer;
  • Step 106 forming an electron transport layer (ETL) and an electron injection layer (EIL) on the white light layer;
  • ETL electron transport layer
  • EIL electron injection layer
  • Step 107 forming a cathode
  • Step 108 Form a second single primary color filter and a third single primary color filter on the cathode corresponding to the position distribution of the second sub-pixel region and the third sub-pixel region.
  • the first single primary color, the second single primary color, and the third single primary color are different primary colors, and are respectively one of red, green, and blue.
  • FIG. 2 to 9 are schematic views showing a method of fabricating an OLED pixel structure according to a first preferred embodiment of the present invention.
  • a substrate 20 is first provided.
  • the substrate 20 is divided into a first sub-pixel region 21, a second sub-pixel region 22 and a third sub-pixel region 23 for respectively displaying different primary color lights.
  • an anode 24 is then formed in the first sub-pixel region 21, the second sub-pixel region 22, and the third sub-pixel region 23 of the substrate 20, respectively.
  • the anode 24 is divided into a first anode 241, a second anode 242 and a third anode 243, and the first anode 241, the second anode 242 and the third anode 243 can be combined with a fine metal by an evaporation process.
  • a mask fine metal mask, FMM
  • the first anode 241, the second anode 242, and the third anode 243 may also be formed using a chemical vapor deposition process in conjunction with development and etching processes.
  • the OLED display device may be a top emission type electroluminescent display panel, and thus the first anode 241, the second anode 242, and the third anode 243 may be reflective electrodes, such as thick metal electrodes, but not This is limited to this.
  • a hole injecting layer 25 is formed in the first sub-pixel region 21, the second sub-pixel region 22, and the third sub-pixel region 23 of the substrate 20, respectively.
  • the hole injection layer 25 can be formed by, for example, an evaporation process, but is not limited thereto.
  • a hole transport layer 26 is formed on the hole injection layer 25 of the substrate 20, and a first single layer is formed by vapor deposition at a position corresponding to the first sub-pixel region of the hole transport layer 26.
  • a primary color hole transport layer 27 wherein the hole transport layer 26 can be formed by, for example, an evaporation process, and the first single primary color hole transport layer 27 can be formed by, for example, an evaporation process with a fine metal mask, but not limit.
  • the hole transport layer 26 and the first single primary color hole transport layer 27 stacked on the hole transport layer 26 may form the first hole transport layer 261.
  • the hole transport layer 26 may form a second hole transport layer 262.
  • the hole transport layer 26 may form a third hole transport layer 263, wherein The thickness of a hole transport layer 261 is greater than the thickness of the second hole transport layer 262 and also greater than the thickness of the third hole transport layer 263.
  • a white light layer 28 is formed on the hole transport layer 26 corresponding to the positions of the second sub-pixel region 22 and the third sub-pixel region 23 and the first single-primary hole transport layer 27.
  • the white light layer 28 can be formed by, for example, an evaporation process, but is not limited thereto.
  • First hole transport layer 261 The thickness of the second hole transport layer 262 is greater than the thickness of the third hole transport layer 263, so that the white light layer 28 is slightly protruding at a position corresponding to the first sub-pixel region 21. .
  • the white light layer 28 may also not protrude at the first pixel region 21 by adjusting the evaporation process.
  • an electron transport layer (ETL) 29 is formed at a position where the white light layer 28 corresponds to the first sub-pixel region 21, the second sub-pixel region 22, and the third sub-pixel region 23, and corresponds to the electron transport layer 29
  • An electron injection layer (EIL) 30 is formed at a position of the primary pixel region 21, the second sub-pixel region 22, and the third sub-pixel region 23.
  • the electron transport layer 29 and the electron injection layer 30 can be formed by, for example, an evaporation process, but are not limited thereto.
  • the cathode 31 is formed in the first sub-pixel region 21, the second sub-pixel region 22, and the third sub-pixel region 23 of the substrate 20, respectively.
  • the cathode 31 is divided into a first cathode 311, a second cathode 312 and a third cathode 313, and the first cathode 311, the second cathode 312 and the third cathode 313 can be used, for example, by an evaporation process. Formed, but not limited to this.
  • the OLED display device of the present embodiment may be an upper illuminating type excitation light display panel electroluminescent display panel, that is, light is emitted from the cathode, so the first cathode 311, the second cathode 312 and the third cathode 313 may be semi-transparent.
  • a reflective electrode, such as a thin metal electrode, is not limited thereto.
  • the first cathode 311, the second cathode 312 and the third cathode 313 can be electrically connected to each other and driven by a common voltage, or can be electrically separated from each other and driven by different voltages.
  • the white light is evaporated.
  • the layer 28, the electron transport layer 29, the electron injection layer 30, and the cathode 31 correspond to the second sub-pixel region 22 and the third sub-pixel region 23 at positions corresponding to the first sub-pixel region 21
  • the position is slightly prominent, that is, the white light layer 28, the electron transport layer 29, the electron injection layer 30, and the cathode 31 protrude in a direction away from the anode at a position corresponding to the first sub-pixel region 21.
  • the white light layer 28, the electron transport layer 29, the electron injection layer 30, and the cathode 31 may not protrude at a position corresponding to the first sub-pixel region 21.
  • a second single primary color filter 321 and a third single primary color filter 322 are formed at positions corresponding to the second sub-pixel region 22 and the third sub-pixel region 23 of the cathode 31, respectively.
  • the OLED pixel structure 40 of this embodiment is shown.
  • the second single primary color filter 321 and the third single primary color filter 322 may be adhered to the side of the cathode 31 away from the anode 24 by an adhesive, but not limit.
  • the manufacturing method of the OLED pixel structure has the following advantages:
  • the process of the conventional red, green and blue sub-pixels adopts the vapor deposition technology requires six fine metal masks (FMM); in the embodiment of the technical solution, the first single primary color is formed by vapor deposition at the corresponding position of the first pixel region.
  • FMM fine metal masks
  • a hole transport layer thereby generating a first single primary color light in the first sub-pixel region, and forming a second single primary color filter and a third single primary color filter at a position corresponding to the second sub-pixel region and the third sub-pixel region a second single primary color light and a third single primary color light are respectively generated in the second sub-pixel region and the third sub-pixel region; that is, the single primary color light is formed by evaporation only at a position corresponding to the first sub-pixel region,
  • the second and third sub-pixel regions form a single primary color light through the filter, so that only one fine metal mask is required for the evaporation of the embodiment of the technical solution;
  • the single primary color light is formed by evaporation only at the position corresponding to the first sub-pixel region, which also means that the spacing between the fine metal mask plates is increased, thereby reducing the probability of color mixing, thereby increasing the process.
  • the evaporation of the embodiment of the technical solution only needs one fine metal mask, and the process of the evaporation technology is adopted compared with the conventional red, green and blue sub-pixels which require six fine metal masks, which greatly reduces the fineness.
  • the number of metal reticle used is such that the manufacturing cost of the OLED display device can be effectively reduced.
  • the preparation method of the OLED pixel structure of the embodiment of the present technical solution has the following advantages:
  • the red, green and blue primary colors need to be emitted through the filter; in the embodiment of the technical solution, only the two primary colors of the red, green and blue primary colors need to be
  • the filter emits light, that is, the number and area of the filter are reduced, so that the light lost by the absorption of the filter is greatly reduced, that is, the light-emitting efficiency of the OLED display device is increased, thereby reducing the light-emitting efficiency. Power consumption of OLED display devices;
  • the resolution of the OLED display device obtained by the conventional method of white light plus color filter is lower than that of the conventional red, green and blue sub-pixels, and the resolution of the OLED display device obtained by the evaporation method is low.
  • a primary color light is formed by an evaporation technique, and only two primary colors are formed by a white light plus a color filter. Therefore, the resolution of the OLED display device formed by the embodiment of the present technical solution is higher than that of the conventional embodiment.
  • the number and area of the filters of the embodiments of the present technical solution are reduced, and the manufacturing cost of the OLED display device can be effectively reduced compared to the conventional white light plus color filter manufacturing method.
  • the OLED pixel structure of this embodiment is divided into a first sub-pixel region, a second sub-pixel region, and a third sub-pixel region.
  • the colors displayed in the first pixel region, the second sub-pixel region, and the third sub-pixel region are different from each other, and correspond to one of three single primary colors of red, green, and blue, respectively.
  • the single primary color of the first sub-pixel region is obtained by vapor-depositing a single primary color hole transport layer, and the single primary color of the second sub-pixel region and the third sub-pixel region is obtained by using a white light layer and a filter.
  • FIG. 9 is a schematic diagram of an OLED pixel structure according to a preferred embodiment of the present invention.
  • an OLED pixel structure 40 is divided into a first sub-pixel region 21, a second sub-pixel region 22, and a third sub-pixel region 23.
  • a hole transport layer 26 and a first single primary color hole transport layer 27 are formed between the anode 24 and the cathode 31 of the OLED pixel structure 40, and a second single is formed on a side of the cathode 31 away from the anode.
  • the hole transport layer 26 is formed at a position corresponding to the first sub-pixel region 21, the second sub-pixel region 22, and the third sub-pixel region 23, and the first single-primary hole transport layer 27 is formed on The hole transport layer 26 corresponds to the position of the first sub-pixel region 21,
  • the second single primary color filter 321 is formed at a position corresponding to the second sub-pixel region 22, and the third single primary color filter 322 is formed at a position corresponding to the third sub-pixel region 23.
  • the hole transport layer 26 and the first single-primary hole transport layer 27 stacked on the hole transport layer 26 may form a first hole transport layer 261 in the second sub-pixel.
  • the hole transport layer 26 may form a second hole transport layer 262.
  • the hole transport layer 26 may form a third hole transport layer 263, wherein the first hole transport layer
  • the thickness of the layer 261 is greater than the thickness of the second hole transport layer 262 and also greater than the thickness of the third hole transport layer 263.
  • the first sub-pixel area 21, the second sub-pixel area 22, and the third sub-pixel area 23 are sequentially arranged, that is, the first sub-pixel area 21 and the third sub-pixel area 23 are respectively located in the second sub-pixel area.
  • the first single primary color hole transport layer 27 is a red hole transport layer, or the first sub-pixel region 21 displays a red color;
  • the third single primary color filter 322 is a green color filter and a blue color filter, respectively, or the color of the second sub-pixel area 22 is green, and the color of the third sub-pixel area 23 is displayed. It is blue.
  • the OLED pixel structure 40 further includes a substrate 20, the anode 24 is formed on the substrate 20, and a hole injection layer 25 is formed on the hole transport layer 26 and the anode 24.
  • a white light layer 28 formed on the hole transport layer 26 corresponding to the position of the second sub-pixel region 22 and the third sub-pixel region 23 and the first single-primary hole transport layer 27; an electron transport layer 29 is formed On the side of the white light layer 28 away from the anode 24; an electron injection layer 30 is formed between the electron transport layer 29 and the cathode 31.
  • the thickness of the first hole transport layer 261 is larger than the thickness of the second hole transport layer 262, and is also larger than the thickness of the third hole transport layer 263, the white light layer 28, the electron transport layer 29, and the electron injection layer 30 and the cathode 31 are slightly protruded at positions corresponding to the first sub-pixel region 21 than at positions corresponding to the second sub-pixel region 22 and the third sub-pixel region 23, that is, the white light layer 28
  • the electron transport layer 29, the electron injection layer 30, and the cathode 31 protrude in a direction away from the anode at a position corresponding to the first sub-pixel region 21.
  • the white light layer 28, the electron transport layer 29, the electron injection layer 30, and the cathode 31 may not protrude at positions corresponding to the first sub-pixel region 21.
  • the anode 24 is divided into a first anode 241, a second anode 242 and a third anode 243; in this embodiment, the OLED display device can be an upper-emitting type electroluminescent display panel, and thus the first anode
  • the second anode 242 and the third anode 243 may be reflective electrodes, such as thick metal electrodes, but not limited thereto.
  • the cathode 31 is divided into a first cathode 311, a second cathode 312 and a third cathode 313, and the first cathode 311, the second cathode 312 and the third cathode 313 can be formed by, for example, an evaporation process. But not limited to this.
  • the OLED display device of this embodiment may be an upper illuminating type excitation light display panel electroluminescent display panel, and thus the first cathode 311, the second cathode 312 and the third cathode 313 may be semi-transmissive semi-reflective electrodes, such as thin metal electrodes. , but not limited to this.
  • the first cathode 311, the second cathode 312 and the third cathode 313 can be electrically connected to each other and driven by a common voltage, or can be electrically separated from each other and driven by different voltages.
  • FIG. 10 is a schematic diagram of an OLED pixel structure according to another preferred embodiment of the present invention.
  • the OLED pixel structure 41 of the present embodiment is substantially the same as the OLED pixel structure 40 of the embodiment shown in FIG. 9 , except that in this embodiment, the second sub-pixel region 22 and the third sub-pixel region 23 are respectively located at the first Both sides of the sub-pixel region 21; the first single-primary hole transport layer 27 is a green hole transport layer, or the color of the first sub-pixel region 21 is green; the second single-primary filter
  • the light sheet 321 and the third single primary color filter 322 are respectively a red filter and a blue filter, or the second sub-pixel region 22 displays a red color, and the third sub-pixel region 23 The color displayed is blue.
  • FIG. 11 is a schematic diagram of an OLED pixel structure according to still another preferred embodiment of the present invention.
  • the OLED pixel structure 42 of the present embodiment is substantially the same as the OLED pixel structure 40 of the embodiment shown in FIG. 9 , except that, in this embodiment, the first sub-pixel region 21 and the third sub-pixel region 23 are respectively located in the second Two sides of the sub-pixel region 22; the first single-primary hole transport layer 27 is a blue hole transport layer, or the color of the first sub-pixel region 21 is blue; the second single The primary color filter 321 and the third single primary color filter 322 are respectively The red color filter and the green color filter, or the second sub-pixel area 22, display a red color, and the third sub-pixel area 23 displays a green color.
  • the setting and display color of the sub-pixel area of the OLED pixel structure of the present technical solution may also have other changes, and are not limited to those described in the above embodiments, and are not enumerated here.
  • a first microcavity 331 is formed between the first anode 241 and the first cathode 311, and the second sub-pixel region is formed.
  • a second micro-resonant cavity 332 is formed between the second anode 242 and the second cathode 312, and in the third sub-pixel region 23, a third micro-resonant cavity 333 is formed between the third anode 243 and the third cathode 313.
  • the first microresonator cavity 331 has a second microresonator cavity 332 and The third micro-resonant cavity 333 has different cavity lengths, whereby the first primary color light L1 can be generated in the first sub-pixel region 21, and white light is generated in the second sub-pixel region 22 and the third sub-pixel region 23; Further, since the cathode 31 is separated from the anode 24 side, a second single primary color filter 321 and a third single primary color filter 322 are formed, and the white light passing through the second sub-pixel region 22 and the third sub-pixel region 23 passes through the After the second single primary color filter 321 and the third single primary color filter 322 are described, the second primary color light L2 and the third primary color light L3 are generated in the second sub-pixel region 22 and the third sub-pixel region 23, respectively.
  • the first single color hole transport layer 27 of the OLED pixel structure of the embodiment of the present invention may be located in the middle of the OLED pixel structure, or may be located on either side of the OLED pixel structure, and the setting is flexible, and the applicable range is applicable. More extensive.
  • FIG. 12 is a schematic plan view showing an OLED display structure of an OLED pixel structure based on the above embodiment.
  • an OLED display structure 50 includes a plurality of pixels arranged in rows and columns, wherein each pixel adopts the OLED pixel structure 40 in the above embodiment, or both adopt the OLED pixel structure 41 in the above embodiment. Or the OLED pixel structure 42 in the above embodiment is used.

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Abstract

提供一种OLED像素结构的制备方法，包括步骤：制备阳极（24），阳极（24）上划分有一第一次像素区（21）、一第二次像素区（22）与一第三次像素区（23）；在阳极（24）上蒸镀形成一空穴传输层（26）；在空穴传输层（26）对应第一次像素区（21）的位置蒸镀形成第一单原色空穴传输层（27）；制备阴极（31）；以及在阴极（31）上对应第二次像素区（22）与第三次像素区（23）的位置分布形成第二单原色滤光片（321）及第三单原色滤光片（322）。还提供一种OLED像素结构及一种OLED显示结构。OLED像素结构、方法及OLED显示结构，同时具有较高的分辨率及较高的发光效率 。

Description

OLED显示器件的像素结构、制备方法及OLED显示结构 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED显示器件的像素结构、制备方法及OLED显示结构。
背景技术
有机电激光显示(Organic Light-Emitting Diode，OLED)是下一代新型显示技术和照明技术，应用前景巨大。已经量产的中小尺寸有源矩阵有机电激光显示(Organic Light-Emitting Diode，AMOLED)的红绿蓝(RGB)子像素都采用蒸镀技术，其分辨率受到掩膜板制备工艺限制很难提高，而白光OLED加彩色滤光片方式的OLED屏幕则可提供较高的分辨率，但其通常有2/3的光强都被滤光片吸收掉，因而整体功耗很高，未能在中小尺寸AMOLED应用中实现量产。
发明内容
本发明实施例公开一种OLED显示器件的像素结构、制备方法及OLED显示结构，其同时具有较高的分辨率及较高的发光效率。
一种OLED像素结构，划分有一第一次像素区、一第二次像素区和一第三次像素区；所述OLED像素结构的阳极与阴极之间蒸镀形成有空穴传输层及第一单原色空穴传输层，所述阴极远离所述阳极的一侧形成有第二单原色滤光片及第三单原色滤光片；其中，所述第一单原色空穴传输层形成于所述空穴传输层对应所述第一次像素区的位置，所述第二单原色滤光片形成于对应所述第二次像素区的位置，所述第三单原色滤光片形成于对应所述第三次像素区的位置。
一种OLED像素结构的制备方法，包括步骤：制备阳极，所述阳极上划分有一第一次像素区、一第二次像素区与一第三次像素区；在所述阳极上蒸镀形成一空穴传输层；在所述空穴传输层对应所述第一次像素 区的位置蒸镀形成第一单原色空穴传输层；制备阴极；以及在所述阴极上对应所述第二次像素区与所述第三次像素区的位置分布形成第二单原色滤光片及第三单原色滤光片。
一种OLED显示结构，包括成行列排布的多个像素，所述像素具有如上所述的像素结构。
本发明的OLED像素结构、制备方法及OLED显示结构，仅在第一次像素区对应的位置通过蒸镀形成单原色光，在第二及第三次像素区通过滤光片形成单原色光，从而使制程良率较高，OLED显示结构的出光效率较高、分辨率也较高，且成本较低。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明一实施例中的OLED像素结构的制备方法流程图。
图2至图9是本发明的第一较佳实施例的制作OLED像素结构的方法示意图；其中，图2为提供的基板的剖视示意图，图3为在基板上形成阳极的示意图，图4为形成空穴注入层的示意图，图5为形成空穴传输层及第一单原色空穴传输层的示意图，图6为形成白光层的示意图，图7为形成电子传输层及电子注入层的示意图，图8为形成阴极的示意图，图9为形成第二单原色滤光片及第三单原色滤光片后得到的OLED像素结构的示意图。
图10为本发明另一实施例中的OLED像素结构的示意图。
图11为本发明又一实施例中的OLED像素结构的示意图。
图12为基于上述实施例的OLED像素结构的OLED显示结构的平面 示意图。
具体实施方式
下面将结合本发明技术方案实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请参考图1。图1是本发明的OLED像素结构的制备方法流程图，本案的OLED像素结构的制备方法主要包括下列流程：
步骤101：提供一基板，并于基板上定义出一第一次像素区、一第二次像素区与一第三次像素区；
步骤102：于基板上对应第一次像素区、二次像素区与第三次像素区的位置形成阳极；
步骤103：在阳极上依次蒸镀形成空穴注入层(HIL)；
步骤104：在HIL层上形成一空穴传输层(HTL)，及在HTL层对应第一次像素区的位置蒸镀形成第一单原色HTL层；
步骤105：在HTL层上对应第二次像素区与第三次像素区的位置及第一单原色HTL层上形成白光层；
步骤106：在白光层上形成电子传输层(ETL)及电子注入层(EIL)；
步骤107：形成阴极；以及
步骤108：在阴极上对应第二次像素区与第三次像素区的位置分布形成第二单原色滤光片及第三单原色滤光片。
其中，第一单原色、第二单原色及第三单原色为不同的原色，且分别为红、绿、蓝色中的一种。
请参考图2至图9。图2至图9是本发明的第一较佳实施例的制作OLED像素结构的方法示意图。
如图2所示，首先提供基板20，基板20划分有第一次像素区21、第二次像素区22与第三次像素区23，分别用以显示不同的原色光。
如图3所示，接着，分别于基板20的第一次像素区21、第二次像素区22与第三次像素区23内形成阳极24。本实施例中，所述阳极24分设为第一阳极241、第二阳极242与第三阳极243，所述第一阳极241、第二阳极242与第三阳极243可利用蒸镀工艺搭配精细金属掩膜(finemetalmask，FMM)加以形成，但不以此为限。例如，第一阳极241、第二阳极242与第三阳极243亦可使用化学气相沉积工艺并配合显影及蚀刻工艺加以形成。在本实施例中，OLED显示器件可为上发光型(topemissiontype)电激发光显示面板，因此第一阳极241、第二阳极242与第三阳极243可为反射电极，例如厚金属电极，但不以此为限。
如图4所示，随后，于基板20的第一次像素区21、第二次像素区22与第三次像素区23内形成一空穴注入层25。其中，空穴注入层25可以利用例如蒸镀工艺形成，但不以此为限。
如图5所示，随后，于基板20的所述空穴注入层25上形成一空穴传输层26，及在所述空穴传输层26对应第一次像素区的位置蒸镀形成第一单原色空穴传输层27；其中，空穴传输层26可以利用例如蒸镀工艺形成，第一单原色空穴传输层27可以利用例如蒸镀工艺搭配精细金属掩膜加以形成，但不以此为限。通过上述方式，于第一次像素区21内，空穴传输层26与堆叠在所述空穴传输层26上的第一单原色空穴传输层27可形成第一空穴传输层261，于第二次像素区22内，空穴传输层26可形成第二空穴传输层262，于第三次像素区23内，空穴传输层26可形成第三空穴传输层263，其中，第一空穴传输层261的厚度大于所述第二空穴传输层262的厚度，也大于所述第三空穴传输层263的厚度。
如图6所示，在空穴传输层26上对应第二次像素区22与第三次像素区23的位置及第一单原色空穴传输层27上形成白光层28。其中，白光层28可以利用例如蒸镀工艺形成，但不以此为限。因第一空穴传输层261 的厚度大于所述第二空穴传输层262的厚度，也大于所述第三空穴传输层263的厚度，故白光层28在与所述第一次像素区21对应的位置会稍显突出。
在其他实施例中，也可以通过调整蒸镀工艺使白光层28在所述第一像素区21处不突出。
如图7所示，在白光层28对应第一次像素区21、第二次像素区22与第三次像素区23的位置上形成电子传输层(ETL)29及在电子传输层29对应第一次像素区21、第二次像素区22与第三次像素区23的位置上形成电子注入层(EIL)30。其中，所述电子传输层29及电子注入层30可以利用例如蒸镀工艺形成，但不以此为限。
如图8所示，随后，分别于基板20的第一次像素区21、第二次像素区22与第三次像素区23内形成阴极31。其中，本实施例中，所述阴极31分设为第一阴极311、第二阴极312与第三阴极313，所述第一阴极311、第二阴极312与第三阴极313可以利用例如蒸镀工艺形成，但不以此为限。本实施例的OLED显示器件可为上发光型激发光显示面板电激发光显示面板，也即光线从阴极出射，因此第一阴极311、第二阴极312与第三阴极313可为半穿透半反射电极，例如薄金属电极，但不以此为限。第一阴极311、第二阴极312与第三阴极313可彼此电性连接并施予共通电压加以驱动，或是彼此电性分离并施予不同的电压加以驱动。
本实施例中，因第一空穴传输层261的厚度大于所述第二空穴传输层262的厚度，也大于所述第三空穴传输层263的厚度，故蒸镀后，所述白光层28、电子传输层29、电子注入层30及阴极31在与所述第一次像素区21对应的位置均会比其在与所述第二次像素区22及第三次像素区23对应的位置稍显突出，也即白光层28、电子传输层29、电子注入层30及阴极31在与所述第一次像素区21对应的位置朝向与所述阳极相背离的方向突出。
在其他实施例中，白光层28、电子传输层29、电子注入层30及阴极 31在与所述第一次像素区21对应的位置也可以不突出。
如图9所示，随后，分别于阴极31对应第二次像素区22与第三次像素区23的位置形成形成第二单原色滤光片321及第三单原色滤光片322，以制作出本实施例的OLED像素结构40。其中，本实施例中，所述第二单原色滤光片321及第三单原色滤光片322可以通过胶粘剂粘合于所述阴极31远离所述阳极24的一侧，但不以此为限。
相比于传统的红绿蓝子像素都采用蒸镀技术的制程方式，本技术方案实施例的OLED像素结构的制备方法具有如下优点：
1.传统的红绿蓝子像素都采用蒸镀技术的制程需要六道精细金属掩模板(FMM)；而本技术方案实施例中，在第一次像素区对应的位置蒸镀形成第一单原色空穴传输层，从而在第一次像素区产生第一单原色光，在第二次像素区及第三次像素区对应的位置形成第二单原色滤光片及第三单原色滤光片，从而在第二次像素区及第三次像素区分别产生第二单原色光及第三单原色光；也即，仅在第一次像素区对应的位置通过蒸镀形成单原色光，在第二及第三次像素区通过滤光片形成单原色光，从而，本技术方案实施例的蒸镀仅需要一道精细金属掩模板；
2.进一步，本技术方案实施例仅在第一次像素区对应的位置通过蒸镀形成单原色光，也意味着精细金属掩模板之间的间距增大，从而可以减少混色几率，进而增加制程良率；
3.并且，本技术方案实施例的蒸镀仅需要一道精细金属掩模板，相比于传统的需要六道精细金属掩模板的红绿蓝子像素都采用蒸镀技术的制程方式，大大减少了精细金属掩模板的使用数量，从而能有效地降低OLED显示器件的制造成本。
相比于传统白光加彩色滤光片的制程方式，本技术方案实施例的OLED像素结构的制备方法具有如下优点：
1.传统的白光加彩色滤光片的制程中，红绿蓝三原色都需要经由滤光片出光；而在本技术方案实施例中，仅红绿蓝三原色中的两原色需要由 滤光片出光，也即，滤光片的使用数量及面积有减少，从而，因滤光片吸收所损失的光强大大减少，也即，增加了OLED显示器件的出光效率，从而也降低了OLED显示器件的功耗；
2.传统的白光加彩色滤光片的制程方式得到的OLED显示器件的分辨率较传统的红绿蓝子像素都采用蒸镀技术的制程方式得到的OLED显示器件的分辨率低，而在本技术方案实施例中，有一原色光是由蒸镀技术形成，仅有两原色光是由白光加彩色滤光片形成，因此，本技术方案实施例形成的OLED显示器件的分辨率要高于传统的白光加彩色滤光片的制程方式形成的OLED显示器件的分辨率；
3.并且，本技术方案实施例的滤光片的使用数量及面积有减少，相比于传统的白光加彩色滤光片的制程方式，也能有效地降低OLED显示器件的制造成本。
以下为本技术方案的OLED像素结构的实施例。
本实施例的OLED像素结构划分有第一次像素区、第二次像素区和第三次像素区。第一次像素区、第二次像素区以及第三次像素区显示的颜色互不相同，且分别对应红色、绿色和蓝色三种单原色中的一种。其中，第一次像素区的单原色采用蒸镀单原色空穴传输层获得，第二次像素区和第三次像素区的单原色采用白光层和滤光片获得。
请再次参阅图9，图9是本发明的一较佳实施例的OLED像素结构的示意图。
本实施例中，一OLED像素结构40划分有一第一次像素区21、一第二次像素区22和一第三次像素区23。所述OLED像素结构40的阳极24与阴极31之间蒸镀形成有空穴传输层26及第一单原色空穴传输层27，所述阴极31远离所述阳极的一侧形成有第二单原色滤光片321及第三单原色滤光片322。其中，所述空穴传输层26形成于对应所述第一次像素区21、第二次像素区22和第三次像素区23的位置，所述第一单原色空穴传输层27形成于所述空穴传输层26对应所述第一次像素区21的位置， 所述第二单原色滤光片321形成于对应所述第二次像素区22的位置，所述第三单原色滤光片322形成于对应所述第三次像素区23的位置。
于第一次像素区21内，空穴传输层26与堆叠在所述空穴传输层26上的第一单原色空穴传输层27可形成第一空穴传输层261，于第二次像素区22内，空穴传输层26可形成第二空穴传输层262，于第三次像素区23内，空穴传输层26可形成第三空穴传输层263，其中，第一空穴传输层261的厚度大于所述第二空穴传输层262的厚度，也大于所述第三空穴传输层263的厚度。
本实施例中，第一次像素区21、第二次像素区22和第三次像素区23依次排布，即第一次像素区21和第三次像素区23分别位于第二次像素区22的两侧；所述第一单原色空穴传输层27为红色空穴传输层，或者说，所述第一次像素区21显示的颜色为红色；所述第二单原色滤光片321及第三单原色滤光片322分别为绿色滤光片及蓝色滤光片，或者说，所述第二次像素区22显示的颜色为绿色，所述第三次像素区23显示的颜色为蓝色。
本实施例中，所述OLED像素结构40还包括一基板20，所述阳极24形成于所述基板20上；一空穴注入层25，形成于所述空穴传输层26与所述阳极24之间；一白光层28，形成于空穴传输层26上对应第二次像素区22与第三次像素区23的位置及第一单原色空穴传输层27上；一电子传输层29，形成于所述白光层28远离所述阳极24的一侧；一电子注入层30，形成于所述电子传输层29与所述阴极31之间。
因第一空穴传输层261的厚度大于所述第二空穴传输层262的厚度，也大于所述第三空穴传输层263的厚度，故白光层28、电子传输层29、电子注入层30及阴极31在与所述第一次像素区21对应的位置均会比其在与所述第二次像素区22及第三次像素区23对应的位置稍显突出，也即白光层28、电子传输层29、电子注入层30及阴极31在与所述第一次像素区21对应的位置朝向与所述阳极相背离的方向突出。
在其他实施例中，白光层28、电子传输层29、电子注入层30及阴极31在与所述第一次像素区21对应的位置也可以不突出。
本实施例中，所述阳极24分设为第一阳极241、第二阳极242与第三阳极243；在本实施例中，OLED显示器件可为上发光型电激发光显示面板，因此第一阳极241、第二阳极242与第三阳极243可为反射电极，例如厚金属电极，但不以此为限。
本实施例中，所述阴极31分设为第一阴极311、第二阴极312与第三阴极313，所述第一阴极311、第二阴极312与第三阴极313可以利用例如蒸镀工艺形成，但不以此为限。本实施例的OLED显示器件可为上发光型激发光显示面板电激发光显示面板，因此第一阴极311、第二阴极312与第三阴极313可为半穿透半反射电极，例如薄金属电极，但不以此为限。第一阴极311、第二阴极312与第三阴极313可彼此电性连接并施予共通电压加以驱动，或是彼此电性分离并施予不同的电压加以驱动。
请参考图10，图10是本发明的另一较佳实施例的OLED像素结构的示意图。本实施例的OLED像素结构41与图9所示的实施例的OLED像素结构40大致相同，其区别在于，本实施例中，第二次像素区22和第三次像素区23分别位于第一次像素区21的两侧；所述第一单原色空穴传输层27为绿色空穴传输层，或者说，所述第一次像素区21显示的颜色为绿色；所述第二单原色滤光片321及第三单原色滤光片322分别为红色滤光片及蓝色滤光片，或者说，所述第二次像素区22显示的颜色为红色，所述第三次像素区23显示的颜色为蓝色。
请参考图11，图11是本发明的又一较佳实施例的OLED像素结构的示意图。本实施例的OLED像素结构42与图9所示的实施例的OLED像素结构40大致相同，其区别在于，本实施例中，第一次像素区21和第三次像素区23分别位于第二次像素区22的两侧；所述第一单原色空穴传输层27为蓝色空穴传输层，或者说，所述第一次像素区21显示的颜色为蓝色；所述第二单原色滤光片321及第三单原色滤光片322分别为 红色滤光片及绿色滤光片，或者说，所述第二次像素区22显示的颜色为红色，所述第三次像素区23显示的颜色为绿色。
本技术方案的OLED像素结构的次像素区的设置及显示色彩还可以有其他变化，而不限于上述实施例所述，在此不一一列举。
在所述OLED像素结构40，41，42中，于第一次像素区21内，第一阳极241与第一阴极311之间形成第一微共振腔(microcavity)331，于第二次像素区22内，第二阳极242与第二阴极312之间形成第二微共振腔332，以及于第三次像素区23内，第三阳极243与第三阴极313之间形成第三微共振腔333。由于第一空穴传输层261具有与所述第二空穴传输层262、所述第三空穴传输层263不同的厚度，因此，第一微共振腔331具有与第二微共振腔332与第三微共振腔333不同的共振腔长度(cavitylength)，藉此可于第一次像素区21产生第一原色光L1，在第二次像素区22及第三次像素区23产生白色光；又由于所述阴极31远离所述阳极24侧形成有第二单原色滤光片321及第三单原色滤光片322，第二次像素区22及第三次像素区23的白色光经过所述第二单原色滤光片321及第三单原色滤光片322之后，分别在所述第二次像素区22及第三次像素区23产生第二原色光L2与第三原色光L3。
其中，本技术方案实施例的OLED像素结构的第一单原色空穴传输层27可以位于OLED像素结构的中间，也可以位于所述OLED像素结构的两侧任一侧，设置较为灵活，适用范围更广。
请参阅图12，图12为基于上述实施例的OLED像素结构的OLED显示结构的平面示意图。本实施例中，一OLED显示结构50包括成行列排布的多个像素，其中，每个像素都采用上述实施例中的OLED像素结构40，或都采用上述实施例中的OLED像素结构41，或都采用上述实施例中的OLED像素结构42。
以上所述是本发明的优选实施例，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也视为本发明的保护范围。

Claims (16)

  1. 一种OLED像素结构，其特征在于，所述OLED像素结构划分有一第一次像素区、一第二次像素区和一第三次像素区；所述OLED像素结构的阳极与阴极之间蒸镀形成有空穴传输层及第一单原色空穴传输层，所述阴极远离所述阳极的一侧形成有第二单原色滤光片及第三单原色滤光片；其中，所述第一单原色空穴传输层形成于所述空穴传输层对应所述第一次像素区的位置，所述第二单原色滤光片形成于对应所述第二次像素区的位置，所述第三单原色滤光片形成于对应所述第三次像素区的位置；所述OLED像素结构还包括白光层，所述白光层形成于所述空穴传输层上对应所述第二次像素区与所述第三次像素区的位置及所述第一单原色空穴传输层上。
  2. 如权利要求1所述的OLED像素结构，其特征在于，于所述第一次像素区内，所述空穴传输层与堆叠在所述空穴传输层上的第一单原色空穴传输层形成第一空穴传输层，于第二次像素区内，所述空穴传输层形成第二空穴传输层，于第三次像素区内，所述空穴传输层形成第三空穴传输层，其中，第一空穴传输层的厚度大于所述第二空穴传输层的厚度，也大于所述第三空穴传输层的厚度。
  3. 如权利要求1所述的OLED像素结构，其特征在于，还包括电子传输层及电子注入层，所述电子传输层形成于所述白光层远离所述阳极的一侧，所述电子注入层形成于所述电子传输层与所述阴极之间。
  4. 如权利要求1所述的OLED像素结构，其特征在于，还包括空穴注入层，形成于所述空穴传输层与所述阳极之间。
  5. 如权利要求1所述的OLED像素结构，其特征在于，所述阳极为反射电极，所述阴极为半穿透半反射电极。
  6. 如权利要求1所述的OLED像素结构，其特征在于，所述第二次像素区和第三次像素区分别位于所述第一次像素区的两侧。
  7. 如权利要求1所述的OLED像素结构，其特征在于，所述第一次像素区和第三次像素区分别位于第二次像素区的两侧。
  8. 如权利要求1所述的OLED像素结构，其特征在于，所述第一次像素区、所述第二次像素区以及所述第三次像素区显示的颜色相异，且分别对应红色、绿色和蓝色三种单原色中的一种。
  9. 一种OLED像素结构的制备方法，包括步骤：
    制备阳极，所述阳极上划分有一第一次像素区、一第二次像素区与一第三次像素区；
    在所述阳极上蒸镀形成一空穴传输层；
    在所述空穴传输层对应所述第一次像素区的位置蒸镀形成第一单原色空穴传输层；
    在所述空穴传输层上对应所述第二次像素区与所述第三次像素区的位置及所述第一单原色空穴传输层上形成白光层；
    制备阴极；以及
    在所述阴极上对应所述第二次像素区与所述第三次像素区的位置分布形成第二单原色滤光片及第三单原色滤光片。
  10. 如权利要求9所述的OLED像素结构的制备方法，其特征在于，通过蒸镀工艺搭配精细金属掩膜形成所述第一单原色空穴传输层；其中，于第一次像素区内，所述空穴传输层与堆叠在所述空穴传输层上的第一单原色空穴传输层形成第一空穴传输层，于第二次像素区内，所述空穴传输层形成第二空穴传输层，于第三次像素区内，所述空穴传输层形成第三空穴传输层，其中，第一空穴传输层的厚度大于所述第二空穴传输层的厚度，也大于所述第三空穴传输层的厚度。
  11. 如权利要求9所述的OLED像素结构的制备方法，其特征在于，在所述阳极上蒸镀形成一空穴传输层之前，先在所述阳极上形成一空穴注入层。
  12. 如权利要求9所述的OLED像素结构的制备方法，其特征在于，形成所述白光层之后，还在所述白光层对应所述第一次像素区、所述第二次像素区与所述第三次像素区的位置上形成电子传输层，及在所述电子传输层对应所述第一次像素区、所述第二次像素区与所述第三次像素区的位置上形成电子注入层。
  13. 如权利要求9所述的OLED像素结构的制备方法，其特征在于，通过蒸镀工艺形成所述阳极及所述阴极；其中，所述阳极为反射电极，所述阴极为半穿透半反射电极。
  14. 如权利要求9所述的OLED像素结构的制备方法，其特征在于，所述第二单原色滤光片及第三单原色滤光片通过胶粘剂粘合于所述阴极远离所述阳极的一侧。
  15. 如权利要求9所述的OLED像素结构的制备方法，其特征在于，所述第一次像素区、所述第二次像素区以及所述第三次像素区显示的颜色相异，且分别对应红色、绿色和蓝色三种单原色中的一种。
  16. 一种OLED显示结构，包括成行列排布的多个像素，所述像素具有如权利要求1-8任一项所述的像素结构。
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