WO2019080262A1 - 一种显示基板及其制备方法、显示装置 - Google Patents

一种显示基板及其制备方法、显示装置

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Publication number
WO2019080262A1
WO2019080262A1 PCT/CN2017/114454 CN2017114454W WO2019080262A1 WO 2019080262 A1 WO2019080262 A1 WO 2019080262A1 CN 2017114454 W CN2017114454 W CN 2017114454W WO 2019080262 A1 WO2019080262 A1 WO 2019080262A1
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Prior art keywords
film layer
substrate
inorganic film
layer
inorganic
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Ceased
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PCT/CN2017/114454
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English (en)
French (fr)
Inventor
余赟
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Application filed by Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to US15/749,206 priority Critical patent/US20190131586A1/en
Publication of WO2019080262A1 publication Critical patent/WO2019080262A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Definitions

  • the present invention relates to the field of display substrate manufacturing, and in particular to a display substrate, a method for fabricating the same, and a display device.
  • the plastic polymer is widely used as a preparation material for a flexible display substrate because of its light weight, large-area coating, high temperature resistance, and transparency.
  • the manufacturing process of the display substrate is generally as follows: coating the substrate film layer 9 on the carrier substrate 8, as shown in FIG. 2, which is a schematic view showing the structure of the substrate in the prior art.
  • the technical problem with this structure is that the substrate film layer 9 forms a non-uniform film layer region 9a in the edge region of the substrate film layer 9 after baking and solidification due to the surface tension generated by the liquid flow.
  • the region range H of the uneven film layer region 9a is approximately 3 to 5 mm.
  • FIG. 2 is a schematic view showing the structure 2 of the substrate in the prior art.
  • the region range T of the uneven film layer region 9a is increased to 5 to 10 mm.
  • the coating method of the conventional substrate causes the film layer on the edge of the substrate to be uneven, and there is a problem that the effective use area of the substrate is reduced.
  • the technical problem to be solved by the present invention is to provide a display substrate, a preparation method thereof, and a display device, which can effectively reduce the range of uneven thickness of the edge film layer of the display substrate and improve the utilization ratio of the substrate use area.
  • an embodiment of the present invention provides a display substrate, including: An inorganic film layer; a substrate film layer disposed on one side and a peripheral side of the inorganic film layer, wherein: the substrate film layer partially coats the inorganic film layer; and the thin film transistor, the OLED layer, and the encapsulation layer disposed on the substrate film layer.
  • the thermal expansion coefficient of the material used for the inorganic film layer is the same as or similar to the thermal expansion coefficient of the material used for the substrate film layer.
  • the material of the inorganic film layer is silicon or silicon dioxide, and the material of the substrate film layer is polyimide.
  • the thickness of the inorganic film layer is smaller than the thickness of the substrate film layer, and the thickness of the inorganic film layer is 100-500 nm.
  • the distance between the boundary of the inorganic film layer and the boundary of the substrate film layer ranges between 3-10 mm.
  • the present invention also discloses a method for preparing a display substrate, comprising the steps of: depositing an inorganic film layer on a carrier substrate; coating a substrate film layer on the inorganic film layer, and coating the substrate film layer on the inorganic layer On one side surface and four sides of the film layer, the inorganic film layer is partially coated; a thin film transistor is prepared on the substrate film layer; an OLED layer is prepared on the thin film transistor; and an encapsulation layer is prepared on the OLED layer.
  • the method further includes peeling off the carrier substrate to form a display substrate.
  • the thickness of the inorganic film layer is 100-500 nm; the coefficient of thermal expansion of the material used for the inorganic film layer is the same as or similar to the coefficient of thermal expansion of the material used for the substrate film layer.
  • the distance between the boundary of the inorganic film layer and the boundary of the substrate film layer ranges from 3 to 10 mm.
  • the present invention also discloses a display device, wherein the display device comprises a display substrate, the display substrate comprises: an inorganic film layer; a substrate film layer disposed on one side surface and a peripheral side of the inorganic film layer, wherein The substrate film layer partially coats the inorganic film layer; the thin film transistor, the OLED layer, and the encapsulation layer disposed on the substrate film layer.
  • the thermal expansion coefficient of the material used for the inorganic film layer is the same as or similar to the thermal expansion coefficient of the material used for the substrate film layer.
  • the material of the inorganic film layer is silicon or silicon dioxide, and the material of the substrate film layer is polyimide.
  • the thickness of the inorganic film layer is smaller than the thickness of the substrate film layer; and the thickness of the inorganic film layer is 100-500 nm.
  • the distance between the boundary of the inorganic film layer and the boundary of the substrate film layer ranges between 3-10 mm.
  • the display substrate provided by the invention and the preparation method thereof and the display device have the following beneficial effects: depositing an inorganic film layer on the carrier substrate; coating the substrate film layer on the inorganic film layer, and coating the substrate film layer on the inorganic film layer
  • the one side surface and the surrounding side partially coat the inorganic film layer, effectively reducing the range of the uneven thickness of the edge film layer of the display substrate, and improving the utilization ratio of the substrate use area.
  • FIG. 1 is a schematic structural view of a display substrate prepared by the method for preparing a substrate according to an embodiment of the present invention.
  • FIG. 2 is a schematic view showing a first structure of a display substrate prepared by a method of preparing a substrate in the prior art.
  • FIG 3 is a schematic view showing a second structure of a display substrate prepared by the method for preparing a substrate in the prior art.
  • the display substrate in the present embodiment includes: an inorganic film layer 1; a substrate film layer 2 disposed on the surface 1a and the peripheral side 1b of the inorganic film layer 1 side, wherein the substrate film layer 2 has an inorganic film a partial coating of layer 1; and a thin film transistor, an OLED layer, and an encapsulation layer disposed on the substrate film layer.
  • the thin film transistor, the OLED layer and the encapsulation layer are consistent with the structure and preparation manner of the thin film transistor, the OLED layer and the encapsulation layer of the existing display substrate.
  • the material of the inorganic film layer is silicon or silicon dioxide.
  • the thermal expansion coefficient of the material used for the inorganic film layer 1 is the same as or similar to the thermal expansion coefficient of the material used for the substrate film layer 2.
  • the material of the substrate film layer 2 is polyimide
  • the thermal expansion coefficient of the selected silicon material is 2.5 ⁇ 10 -6 /K
  • the thermal expansion coefficient of the selected silicon material is 0.5 ⁇ 10 -6 /K
  • the thermal expansion coefficient of the polyimide material used for the substrate film layer 2 is similar.
  • the effect of such setting is that the material having the same or similar thermal expansion coefficient can reduce the thermal stress during the substrate fabrication process and reduce the probability of uneven film formation at the edge of the substrate film layer 2.
  • the region where the inorganic film layer 1 is partially covered by the substrate film layer 2 includes a region of one surface 1a of the inorganic film layer 1 and a region of the peripheral side 1b of the inorganic film layer 1.
  • the distance between the boundary 1a, 1b of the inorganic film layer and the boundary of the substrate film layer 2 is in the range of 3-10 mm, that is, the boundary 1a of the inorganic film layer 1 and the substrate film layer 2 are
  • the distance range of the boundary 2c is set to be between 3 and 10 mm, and/or the distance between the boundary 1b of the inorganic film layer and the boundary 2c of the substrate film layer 2 is set to be between 3 and 10 mm.
  • the effect of such a setting is that the applicant has found through repeated tests that when the thickness of the substrate film layer 2 is set to a different size, the applicant adjusts the boundary 1a of the inorganic film layer 1 and the boundary 2c of the substrate film layer 2 accordingly.
  • the distance range will produce an unexpected technical effect of improving the uniformity of the edge film layer of the substrate film layer 2.
  • the manufacturing process of the substrate film layer 2 of a common thickness can be accommodated, so as to avoid the substrate film
  • the edges of layer 2 create a non-uniform film.
  • the inorganic film layer 1 has a thickness dimension of between 100 and 500 nm.
  • the effect of the setting is as follows: The applicant has found through many experiments that when the inorganic film layer 1 is not provided, the uneven thickness of the uneven film produced by the edge of the substrate film layer 2 in the manufacturing process of the substrate film layer 2 of a common thickness is obtained. Between 100-500nm.
  • the thickness of the inorganic film layer 1 is set to be equivalent to the thickness of the protrusion of the uneven film produced by the directly disposed substrate film layer 2, that is, the thickness of the inorganic film layer 1 is between 100 and 500 nm, It has a more obvious inhibitory effect on the uneven film layer.
  • the substrate film layer 2 partially covers the inorganic film layer 1 , which can effectively reduce the range of the uneven thickness of the edge film layer of the display substrate and improve the utilization ratio of the substrate use area.
  • the present invention also discloses a method for preparing a display substrate.
  • the method includes the steps of: depositing an inorganic film layer 1 on a carrier substrate 3; coating a substrate film layer 2 on the inorganic film layer 1, a substrate film layer 2 coating on one side surface 1a and four sides 1b of the inorganic film layer 1, partially coating the inorganic film layer 3; preparing a thin film transistor on the substrate film layer; preparing an OLED layer on the thin film transistor; preparing a package on the OLED layer Floor.
  • thin film transistor, OLED layer and package layer with existing display The structure and preparation of the thin film transistor, OLED layer and encapsulation layer of the substrate are identical.
  • the carrier substrate 3 is glass.
  • the inorganic film layer 1 is prepared on the glass substrate.
  • the material of the inorganic film layer is silicon or silicon dioxide.
  • the thermal expansion coefficient of the material used in the inorganic film layer 1 is The materials used for the substrate film layer 2 have the same or similar thermal expansion coefficients.
  • the material of the substrate film layer 2 is polyimide
  • the thermal expansion coefficient of the selected silicon material is 2.5 ⁇ 10 -6 /K
  • the thermal expansion coefficient of the selected silicon dioxide material is 0.5 ⁇ 10 -6 /K
  • the thermal expansion coefficient of the polyimide material used for the substrate film layer 2 is similar. The effect of such setting is that the material having the same or similar thermal expansion coefficient can reduce the thermal stress during the substrate fabrication process and reduce the probability of uneven film formation at the edge of the substrate film layer 2.
  • the substrate film layer 2 is coated on the inorganic film layer 1 and the carrier substrate 3 around it, that is, the area of the substrate film layer 2 is larger than that of the inorganic film layer 1, and the substrate film layer 2 partially encapsulates the inorganic film layer 1. cover.
  • the partially covered region includes a region of one side surface 1a of the inorganic film layer 1 and a region of the peripheral side 1b of the inorganic film layer 1.
  • the distance between the boundary 1a, 1b of the inorganic film layer and the boundary of the substrate film layer 2 is in the range of 3-10 mm, that is, the boundary 1a of the inorganic film layer 1 and the boundary 2c of the substrate film layer 2
  • the distance range is set between 3 and 10 mm, and/or the distance between the boundary 1b of the inorganic film layer and the boundary 2c of the substrate film layer 2 is set to be between 3 and 10 mm.
  • the effect of such a setting is that the applicant has found through repeated tests that when the thickness of the substrate film layer 2 is set to a different size, the applicant adjusts the boundary 1a of the inorganic film layer 1 and the boundary 2c of the substrate film layer 2 accordingly.
  • the distance range will produce an unexpected technical effect of improving the uniformity of the edge film layer of the substrate film layer 2.
  • the distance between the boundary 1a, 1b of the inorganic film layer and the boundary of the substrate film layer 2 is in the range of 3 to 10 mm, the manufacturing process of the substrate film layer 2 of a common thickness can be accommodated, so as to avoid the substrate film The edges of layer 2 create a non-uniform film.
  • the inorganic film layer 1 has a thickness dimension of between 100 and 500 nm.
  • the effect of the setting is as follows: The applicant has found through many experiments that when the inorganic film layer 1 is not provided, the uneven thickness of the uneven film produced by the edge of the substrate film layer 2 in the manufacturing process of the substrate film layer 2 of a common thickness is obtained. Between 100-500nm.
  • the thickness of the inorganic film layer 1 is set to be equivalent to the thickness of the protrusion of the uneven film produced by the directly disposed substrate film layer 2, that is, the thickness of the inorganic film layer 1 is between 100 and 500 nm, It has a more obvious inhibitory effect on the uneven film layer.
  • the method further includes peeling off the carrier substrate 3 to form a display substrate.
  • the substrate film layer 2 partially covers the inorganic film layer 1, which can effectively reduce the range of the uneven thickness of the edge film layer of the display substrate, and improve the utilization ratio of the substrate use area.
  • the present invention also discloses a display device including the above display substrate.
  • the embodiment of the display device is the same as the embodiment of the display substrate, and details are not described herein.
  • the display substrate provided by the invention and the preparation method thereof and the display device have the following beneficial effects: depositing an inorganic film layer on the carrier substrate; coating the substrate film layer on the inorganic film layer, and coating the substrate film layer on the inorganic film layer
  • the one side surface and the surrounding side partially coat the inorganic film layer, effectively reducing the range of the uneven thickness of the edge film layer of the display substrate, and improving the utilization ratio of the substrate use area.

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  • Manufacturing & Machinery (AREA)
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Abstract

本发明公开了一种显示基板，包括：无机膜层；设置在无机膜层一侧表面和四周侧的基板膜层，其中：基板膜层将无机膜层局部包覆；设置在基板膜层上的薄膜晶体管、OLED层和封装层。本发明还公开了一种显示基板的制备方法，包括以下步骤：在载体基板上沉积无机膜层；在无机膜层上涂布基板膜层，基板膜层涂布在无机膜层的一侧表面和四周侧，将无机膜层局部包覆；在基板膜层上制备薄膜晶体管；在薄膜晶体管上制备OLED层；在OLED层上制备封装层。本发明还公开了一种显示装置。实施本发明的显示基板及其制备方法、显示装置，有效减小显示基板的边缘膜层厚度不均匀区域的范围，提高基板使用面积的利用率。

Description

一种显示基板及其制备方法、显示装置
本申请要求于2017年10月27日提交中国专利局、申请号为201711056345.9、发明名称为“一种显示基板及其制备方法、显示装置”的中国专利申请的优先权，上述专利的全部内容通过引用结合在本申请中。
技术领域
本发明涉及显示基板制造领域，尤其涉及一种显示基板及其制备方法、显示装置。
背景技术
塑料聚合物因具备质量轻、可进行大面积涂布、耐高温、透明等优点目前作为柔性显示基板的制备材料广泛应用。
现有技术中显示基板的制作过程通常为：在载体基板8上涂布基板膜层9，如图2所示，为现有技术中显示基板结构一的示意图。该结构存在的技术问题是：由于液体流动产生的表面张力，基板膜层9在烘烤固化后在基板膜层9的边缘区域会形成不均匀的膜层区域9a。例如：图1中涂布基板膜层9的厚度为10μm左右时，不均匀的膜层区域9a的区域范围H大概为3～5mm。
此外，当涂布基板膜层9的厚度增加时，显示基板结构中不均匀的膜层区域9a的区域会增大，如图2所示，为现有技术中显示基板结构二的示意图。当基板膜层9涂布厚度达到15～20μm时，不均匀的膜层区域9a的区域范围T会增大到5～10mm。
综上，现有基板的涂布方式会造成基板边缘的膜层不均匀，存在基板有效利用面积减少的问题。
发明内容
本发明所要解决的技术问题在于，提供一种显示基板及其制备方法、显示装置，有效减小显示基板边缘膜层厚度不均匀区域的范围，提高基板使用面积的利用率。
为了解决上述技术问题，本发明的实施例提供了一种显示基板，包括： 无机膜层；设置在无机膜层一侧表面和四周侧的基板膜层，其中：基板膜层将无机膜层局部包覆；设置在基板膜层上的薄膜晶体管、OLED层和封装层。
其中，无机膜层所使用材料的热膨胀系数与基板膜层所使用材料的热膨胀系数相同或相近。
其中，无机膜层的材料为硅或二氧化硅，基板膜层的材料为聚酰亚胺。
其中，无机膜层的厚度尺寸小于基板膜层的厚度尺寸，无机膜层的厚度为100-500nm。
其中，无机膜层的边界与基板膜层的边界之间的距离范围在3-10mm之间。
为解决上述技术问题，本发明还公开了一种显示基板的制备方法，包括以下步骤：在载体基板上沉积无机膜层；在无机膜层上涂布基板膜层，基板膜层涂布在无机膜层的一侧表面和四周侧，将无机膜层局部包覆；在基板膜层上制备薄膜晶体管；在薄膜晶体管上制备OLED层；在OLED层上制备封装层。
其中，还包括：将载体基板剥离，形成显示基板。
其中，沉积无机膜层的步骤中，述无机膜层的厚度为100-500nm；无机膜层所使用材料的热膨胀系数与基板膜层所使用材料的热膨胀系数相同或相近。
其中，在无机膜层上涂布基板膜层的步骤中，无机膜层的边界与基板膜层的边界之间的距离范围在3-10mm之间。
为解决上述技术问题，本发明还公开了一种显示装置，其中，显示装置包括显示基板，显示基板，包括：无机膜层；设置在无机膜层一侧表面和四周侧的基板膜层，其中：基板膜层将无机膜层局部包覆；设置在基板膜层上的薄膜晶体管、OLED层和封装层。
其中，无机膜层所使用材料的热膨胀系数与基板膜层所使用材料的热膨胀系数相同或相近。
其中，无机膜层的材料为硅或二氧化硅，基板膜层的材料为聚酰亚胺。
其中，无机膜层的厚度尺寸小于基板膜层的厚度尺寸；无机膜层的厚度为100-500nm。
其中，无机膜层的边界与基板膜层的边界之间的距离范围在3-10mm之间。
实施本发明所提供的显示基板及其制备方法、显示装置，具有如下有益效果，在载体基板上沉积无机膜层；在无机膜层上涂布基板膜层，基板膜层涂布在无机膜层的一侧表面和四周侧，将无机膜层局部包覆，有效减小显示基板的边缘膜层厚度不均匀区域的范围，提高基板使用面积的利用率。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明实施例显示基板制备方法制备的显示基板的结构示意图。
图2现有技术中显示基板制备方法所制备的显示基板的第一结构的示意图。
图3现有技术中显示基板制备方法所制备的显示基板的第二结构的示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
本实施例中的显示基板，参照图1所示，包括：无机膜层1；设置在无机膜层1一侧表面1a和四周侧1b的基板膜层2，其中：基板膜层2将无机膜层1的局部包覆；以及设置在基板膜层上的薄膜晶体管、OLED层和封装层。其中：薄膜晶体管、OLED层和封装层与现有显示基板的薄膜晶体管、OLED层和封装层的结构和制备方式一致。
具体实施时，无机膜层的材料为硅或二氧化硅，优选的实施方式中，无机膜层1所使用材料的热膨胀系数与基板膜层2所使用材料的热膨胀系数相同或相近。例如：本实施例中基板膜层2的材料为聚酰亚胺，所选用硅材料 的热膨胀系数2.5x10-6/K，或者所选用二氧化硅材料的热膨胀系数0.5x10-6/K，其与基板膜层2所使用的聚酰亚胺材料的热膨胀系数相近。
如此设置的作用是：相同或相近热膨胀系数的材料，能够减少基板制成过程中的热应力，减少基板膜层2边缘产生不均匀膜层的概率。
本实施例子中，基板膜层2对无机膜层1进行局部包覆的区域包括：无机膜层1的一侧表面1a的区域和无机膜层1的四周侧1b的区域。
优选的实施方式中，无机膜层的边界1a，1b与基板膜层2的边界之间的距离范围在3-10mm之间，也就是说，无机膜层1的边界1a与基板膜层2的边界2c的距离范围设定在3-10mm之间，和/或无机膜层的边界1b与基板膜层2的边界2c的距离范围设定在3-10mm之间。
如此设置的作用是：申请人通过多次试验发现，在当基板膜层2的厚度设置为不同的尺寸时，申请人随之调整无机膜层1的边界1a与基板膜层2的边界2c的距离范围，会产生明显的改善基板膜层2边缘膜层均匀度意想不到的技术效果。在当无机膜层的边界1a，1b与基板膜层2的边界之间的距离范围在3-10mm之间时，能够适应常见厚度的基板膜层2的制成工艺，使之避免在基板膜层2的边缘产生不均匀膜。
优选的，无机膜层1的厚度尺寸在100-500nm之间。如此设置的作用是：申请人通过多次试验发现，当不设置无机膜层1，在常见厚度的基板膜层2的制成工艺中，基板膜层2边缘所产生不均匀膜的凸起厚度在100-500nm之间。如此，当无机膜层1的厚度设置与该直接设置基板膜层2在其边缘所产生不均匀膜的凸起厚度相当时，也就是无机膜层1的厚度尺寸在100-500nm之间，能够对不均匀膜层产生较为明显的抑制作用。
基板膜层2将无机膜层1局部包覆，能够有效减小显示基板的边缘膜层厚度不均匀区域的范围，提高基板使用面积的利用率。
本发明还公开了一种显示基板的制备方法，参照图1所示，包括以下步骤：在载体基板3上沉积无机膜层1；在无机膜层1上涂布基板膜层2，基板膜层2涂布在无机膜层1的一侧表面1a和四周侧1b，将无机膜层3局部包覆；在基板膜层上制备薄膜晶体管；在薄膜晶体管上制备OLED层；在OLED层上制备封装层。其中：薄膜晶体管、OLED层和封装层与现有显示 基板的薄膜晶体管、OLED层和封装层的结构和制备方式一致。
具体实施时，载体基板3为玻璃，首先在玻璃基板上制备无机膜层1，无机膜层的材料为硅或二氧化硅，优选的实施方式中，无机膜层1所使用材料的热膨胀系数与基板膜层2所使用材料的热膨胀系数相同或相近。例如：本实施例中基板膜层2的材料为聚酰亚胺，所选用硅材料的热膨胀系数2.5x10-6/K，或者所选用二氧化硅材料的热膨胀系数0.5x10-6/K，其与基板膜层2所使用的聚酰亚胺材料的热膨胀系数相近。如此设置的作用是：相同或相近热膨胀系数的材料，能够减少基板制成过程中的热应力，减少基板膜层2边缘产生不均匀膜层的概率。
然后，在无机膜层1及其四周的载体基板3上涂布基板膜层2，也就是说，基板膜层2的面积大于无机膜层1，基板膜层2对无机膜层1进行局部包覆。该局部包覆的区域包括：无机膜层1的一侧表面1a的区域和无机膜层1的四周侧1b的区域。
具体实施时，无机膜层的边界1a，1b与基板膜层2的边界之间的距离范围在3-10mm之间，也就是说，无机膜层1的边界1a与基板膜层2的边界2c的距离范围设定在3-10mm之间，和/或无机膜层的边界1b与基板膜层2的边界2c的距离范围设定在3-10mm之间。如此设置的作用是：申请人通过多次试验发现，在当基板膜层2的厚度设置为不同的尺寸时，申请人随之调整无机膜层1的边界1a与基板膜层2的边界2c的距离范围，会产生明显的改善基板膜层2边缘膜层均匀度意想不到的技术效果。在当无机膜层的边界1a，1b与基板膜层2的边界之间的距离范围在3-10mm之间时，能够适应常见厚度的基板膜层2的制成工艺，使之避免在基板膜层2的边缘产生不均匀膜。
优选的，无机膜层1的厚度尺寸在100-500nm之间。如此设置的作用是：申请人通过多次试验发现，当不设置无机膜层1，在常见厚度的基板膜层2的制成工艺中，基板膜层2边缘所产生不均匀膜的凸起厚度在100-500nm之间。如此，当无机膜层1的厚度设置与该直接设置基板膜层2在其边缘所产生不均匀膜的凸起厚度相当时，也就是无机膜层1的厚度尺寸在100-500nm之间，能够对不均匀膜层产生较为明显的抑制作用。
进一步的，还包括：将载体基板3剥离，形成显示基板。
本实施例中显示基板的制备方法，基板膜层2将无机膜层1局部包覆，能够有效减小显示基板的边缘膜层厚度不均匀区域的范围，提高基板使用面积的利用率。
本发明还公开了一种包含上述显示基板的显示装置，该显示装置的实施方式与上述显示基板的实施方式相同，不再赘述。
实施本发明所提供的显示基板及其制备方法、显示装置，具有如下有益效果，在载体基板上沉积无机膜层；在无机膜层上涂布基板膜层，基板膜层涂布在无机膜层的一侧表面和四周侧，将无机膜层局部包覆，有效减小显示基板的边缘膜层厚度不均匀区域的范围，提高基板使用面积的利用率。

Claims (16)

  1. 一种显示基板，其中，包括：
    无机膜层；
    设置在所述无机膜层一侧表面和四周侧的基板膜层，其中：所述基板膜层将所述无机膜层局部包覆；
    设置在所述基板膜层上的薄膜晶体管、OLED层和封装层。
  2. 如权利要求1所述的显示基板，其中，所述无机膜层所使用材料的热膨胀系数与所述基板膜层所使用材料的热膨胀系数相同或相近。
  3. 如权利要求2所述的显示基板，其中，所述无机膜层的材料为硅或二氧化硅，所述基板膜层的材料为聚酰亚胺。
  4. 如权利要求1所述的显示基板，其中，所述无机膜层的厚度尺寸小于所述基板膜层的厚度尺寸；
    所述无机膜层的厚度为100-500nm。
  5. 如权利要求1所述的显示基板，其中，所述无机膜层的边界与所述基板膜层的边界之间的距离范围在3-10mm之间。
  6. 一种显示基板的制备方法，其中，包括以下步骤：
    在载体基板上沉积无机膜层；
    在所述无机膜层上涂布基板膜层，所述基板膜层涂布在所述无机膜层的一侧表面和四周侧，将所述无机膜层局部包覆；
    在所述基板膜层上制备薄膜晶体管；
    在所述薄膜晶体管上制备OLED层；
    在所述OLED层上制备封装层。
  7. 如权利要求6所述的显示基板的制备方法，其中，还包括：
    将所述载体基板剥离，形成显示基板。
  8. 如权利要求6所述的显示基板的制备方法，其中，沉积所述无机膜层的步骤中，述无机膜层的厚度为100-500nm；
    所述无机膜层所使用材料的热膨胀系数与所述基板膜层所使用材料的热膨胀系数相同或相近。
  9. 如权利要求7所述的显示基板的制备方法，其中，沉积所述无机膜 层的步骤中，述无机膜层的厚度为100-500nm；
    所述无机膜层所使用材料的热膨胀系数与所述基板膜层所使用材料的热膨胀系数相同或相近。
  10. 如权利要求6所述的显示基板的制备方法，其中，在所述无机膜层上涂布基板膜层的步骤中，所述无机膜层的边界与所述基板膜层的边界之间的距离范围在3-10mm之间。
  11. 如权利要求7所述的显示基板的制备方法，其中，在所述无机膜层上涂布基板膜层的步骤中，所述无机膜层的边界与所述基板膜层的边界之间的距离范围在3-10mm之间。
  12. 一种显示装置，其中，所述显示装置包括显示基板，所述显示基板，包括：无机膜层；设置在所述无机膜层一侧表面和四周侧的基板膜层，其中：所述基板膜层将所述无机膜层局部包覆；设置在所述基板膜层上的薄膜晶体管、OLED层和封装层。
  13. 如权利要求12所述的显示基板，其中，所述无机膜层所使用材料的热膨胀系数与所述基板膜层所使用材料的热膨胀系数相同或相近。
  14. 如权利要求13所述的显示基板，其中，所述无机膜层的材料为硅或二氧化硅，所述基板膜层的材料为聚酰亚胺。
  15. 如权利要求12所述的显示基板，其中，所述无机膜层的厚度尺寸小于所述基板膜层的厚度尺寸；
    所述无机膜层的厚度为100-500nm。
  16. 如权利要求12所述的显示基板，其中，所述无机膜层的边界与所述基板膜层的边界之间的距离范围在3-10mm之间。
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