WO2019071477A1 - 有机发光器件的封装结构及其制造方法、有机发光装置 - Google Patents

有机发光器件的封装结构及其制造方法、有机发光装置 Download PDF

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Publication number
WO2019071477A1
WO2019071477A1 PCT/CN2017/105745 CN2017105745W WO2019071477A1 WO 2019071477 A1 WO2019071477 A1 WO 2019071477A1 CN 2017105745 W CN2017105745 W CN 2017105745W WO 2019071477 A1 WO2019071477 A1 WO 2019071477A1
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Prior art keywords
inorganic layer
layer
emitting device
organic light
organic
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PCT/CN2017/105745
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English (en)
French (fr)
Inventor
练文东
陈一鸣
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深圳市柔宇科技有限公司
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Application filed by 深圳市柔宇科技有限公司 filed Critical 深圳市柔宇科技有限公司
Priority to EP17928575.4A priority Critical patent/EP3696858A1/en
Priority to US16/753,156 priority patent/US20200321555A1/en
Priority to PCT/CN2017/105745 priority patent/WO2019071477A1/zh
Priority to CN201780095649.8A priority patent/CN111373562A/zh
Priority to KR1020207012108A priority patent/KR20200057074A/ko
Priority to JP2020519778A priority patent/JP2020536366A/ja
Priority to TW107135695A priority patent/TW201916430A/zh
Publication of WO2019071477A1 publication Critical patent/WO2019071477A1/zh

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/873Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04Coating on selected surface areas, e.g. using masks
    • C23C16/042Coating on selected surface areas, e.g. using masks using masks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/842Containers
    • H10K50/8426Peripheral sealing arrangements, e.g. adhesives, sealants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present invention relates to the field of illuminating display technologies, and in particular, to a package structure of an organic light emitting device, a manufacturing method thereof, and an organic illuminating device.
  • OLED Organic Light-Emitting Diode
  • the structure currently used by TFE is mainly an inorganic layer, an organic layer, and an inorganic layer overlap.
  • the organic layer is formed by IJP, that is, an ink jet printer (Ink Jet Printer) is used to form an organic layer by ink jet. Because Ink (organic material) has good fluidity, a bank similar to the baffle is required at both ends of the Panel to prevent Ink overflow. Generally, the formation of Bank is generally formed in the TFT process, but the bank is formed in the front-end process.
  • the technical problem to be solved by the present invention is to provide a package structure of an organic light emitting device that effectively prevents overflow of an organic layer and effectively shortens a distance between a barrier portion and an effective light emitting region, and a method of manufacturing the package structure, and the package having the package Structured organic light-emitting device.
  • the technical solution adopted by the present invention to solve the technical problem thereof is: providing a package structure of an organic light emitting device, comprising: a first inorganic layer disposed on a substrate and covering the organic light emitting device, disposed on the first inorganic layer a peripheral blocking portion, an organic layer and a second inorganic layer disposed in sequence on the first inorganic layer;
  • the blocking portion defines an enclosing portion on the first inorganic layer inside the blocking portion, and the organic layer is disposed in the surrounding portion.
  • the present invention also provides a method for fabricating a package structure of an organic light emitting device, comprising the steps of: [0008] Sl, disposing a first inorganic layer on a substrate, the first inorganic layer covering an organic layer on the substrate Light emitting device
  • a barrier portion is disposed on a periphery of the first inorganic layer, such that the barrier portion defines an enclosing portion on the first inorganic layer inside the barrier portion;
  • an organic layer is disposed on the first inorganic layer, and the organic layer is located in the surrounding portion;
  • a second inorganic layer is disposed on the organic layer.
  • the present invention further provides a method for fabricating a package structure of another organic light emitting device, comprising the steps of: [0013] Sl, in the TFT process, providing a blocking portion on the substrate; the blocking portion is located on the substrate The periphery of the organic light emitting device;
  • an organic layer is disposed on the first inorganic layer; the organic layer is located in an enclosing portion formed between the blocking portion and the first inorganic layer;
  • a second inorganic layer is disposed on the organic layer.
  • the present invention also provides an organic light emitting device including a substrate, an organic light emitting device, and the above package structure;
  • the organic light emitting device is disposed on the substrate, and the package structure is disposed on the substrate and covers the organic light emitting device.
  • a barrier is disposed on the periphery of the first organic layer, is not covered by it, and the hydrophobicity of the barrier is prevented from being changed, thereby ensuring that the barrier portion effectively prevents the organic layer
  • the overflow also effectively shortens the distance between the barrier and the effective light-emitting area of the organic light-emitting device.
  • FIG. 1 is a schematic structural view of a package structure of an organic light emitting device according to an embodiment of the present invention. Embodiments of the invention
  • a package structure of an organic light emitting device includes a first inorganic layer 10 disposed on a substrate 1 and covering the organic light emitting device 2, and disposed at a periphery of the first inorganic layer 10.
  • the barrier portion 40, the organic layer 30 and the second inorganic layer 20 are sequentially disposed on the first inorganic layer 10.
  • the blocking portion 40 defines an enclosing portion 50 on the first inorganic layer 10 inside the blocking portion 40, the enclosing portion 50 also being located above the organic light emitting device 2, and the organic layer 30 is disposed in the surrounding portion 50.
  • the organic light emitting device 2 may be an OLED device; the substrate 1 may be a glass substrate.
  • the first inorganic layer 10, the organic layer 30 and the second inorganic layer 20 are sequentially laminated on the organic light-emitting device 2 to protect the organic light-emitting layer of the organic light-emitting device 2 from water and oxygen. It can be understood that the package structure of the embodiment of the present invention can also be applied to other light emitting devices, such as TFT devices.
  • the first inorganic layer 10 serves as a first layer structure covering the organic light-emitting device 2, which may be formed on the substrate 1 by chemical vapor deposition (DVD) or atomic layer deposition (ALD). As shown in Fig. 1, the intermediate portion of the first inorganic layer 10 covers the upper surface and the side surface of the organic light-emitting device 2, and the edge portion extends along the side of the organic light-emitting device 2 onto the substrate 1.
  • DVD chemical vapor deposition
  • ALD atomic layer deposition
  • the barrier portion 40 is located on the substrate 1 at the periphery of the first inorganic layer 10, may be located on the periphery of the first inorganic layer 10, or may be located outside the periphery.
  • the height of the blocking portion 40 is greater than the height of the first inorganic layer 10, and the higher blocking portion 40 can perform inkjet printing on the inkjet printer to form the organic layer 30, effectively preventing overflow of the organic material with strong fluidity, thereby making the organic
  • the layer 30 can be completely disposed within the enclosure 50.
  • the barrier portion 40 may be formed on the first inorganic layer 10 by a reticle in combination with a chemical vapor deposition method or an atomic layer deposition method, or may be formed on the first inorganic layer 10 by chemical vapor deposition in combination with dry etching.
  • the barrier portion 40 is made of an insulating material having hydrophobicity so as not to be uncomfortable with the organic layer 30, so that the organic layer 30 forms a certain shape on the inner side thereof.
  • the blocking portion 40 may be made of silicon oxide (SiOx) or silicon nitride (SiNx).
  • the barrier portion 40 is disposed on the periphery of the first inorganic layer 10, not covered by the first inorganic layer 10, the hydrophobicity of the barrier portion 40 is not weakened, and the organic layer 30 is effectively prevented during the process of forming the organic layer 30. Forming material Overflow.
  • the blocking portion 40 does not need to have a larger distance from the effective light-emitting area of the organic light-emitting device 2, thereby effectively shortening the distance between the blocking portion 40 and the effective light-emitting region, thereby facilitating the miniaturization of the overall volume of the organic light-emitting device.
  • the organic layer 30 may be formed on the first inorganic layer 10 by an inkjet printing method (IJP), so that the organic layer 30 is an organic film layer formed of an organic material such as ink (Ink). Due to the arrangement of the barrier portion 40 at the periphery of the first inorganic layer 10, the ink is prepared in the organic layer 30, and the ink is blocked by the blocking portion 40 and does not flow to the outside of the blocking portion 40.
  • IJP inkjet printing method
  • the organic layer 30 includes a flat portion 31 corresponding to the organic light emitting device 2, and a slope portion 32 connected to the outer periphery of the flat portion 31 and corresponding to the peripheral side of the organic light emitting device 2 .
  • the slope portion 32 is away from the flat portion
  • the side of the 31 abuts against the side of the blocking portion 40.
  • the side height of the slope portion 32 is lower or flush with the side height of the blocking portion 40.
  • the second inorganic layer 20 is disposed on the organic layer 30 and covers the barrier 40.
  • the structure of the corresponding organic layer 30 is such that the second inorganic layer 20 covers the flat portion 31 and the slope portion 32 of the organic layer 30, and extends to the outer periphery of the blocking portion 40 to cover the barrier portion 40.
  • the edge portion of the second inorganic layer 20 may further extend to be in contact with the first inorganic layer 10.
  • the second inorganic layer 20 may be formed on the organic layer 30 by chemical vapor deposition (DVD) or atomic layer deposition (ALD).
  • the second inorganic layer 20 and the first inorganic layer 10 may be made of the same material, and specific materials and preparation methods can be achieved by the prior art.
  • a first inorganic layer 10 is disposed on the substrate 1, and the first inorganic layer 10 covers the organic light emitting device on the substrate 1.
  • the first inorganic layer 10 may be formed on the substrate 1 by chemical vapor deposition or atomic layer deposition.
  • a blocking portion 40 is disposed on the periphery of the first inorganic layer 10, so that the blocking portion 40 defines an enclosing portion 50 on the inner side of the blocking portion 40 on the first inorganic layer 10.
  • the barrier portion 40 may be formed on the first inorganic layer by using a reticle in combination with a chemical vapor deposition method or an atomic layer deposition method.
  • An organic layer 30 is disposed on the first inorganic layer 10, and the organic layer 30 is located in the surrounding portion 50.
  • the organic layer 30 is formed on the first inorganic layer 10 by inkjet printing, and the organic layer 30 does not overflow outside the barrier portion 40 during formation due to the definition of the surrounding portion 50.
  • a second inorganic layer 20 is disposed on the organic layer 30.
  • the first inorganic layer 10, the second inorganic layer 20 may also be formed on the organic layer 20 by chemical vapor deposition or atomic layer deposition. Moreover, the second inorganic layer 20 also extends outside the blocking portion 40, and the barrier portion 40 is covered.
  • FIG. 1 another embodiment of a method for fabricating a package structure of an organic light emitting device of the present invention may include the following steps:
  • a blocking portion 40 is disposed on the substrate 1; the blocking portion 40 is located on the periphery of the organic light emitting device 2 on the substrate 1.
  • the first inorganic layer 10 covers the organic light emitting device 2, and the barrier portion 40 is located at the periphery of the first inorganic layer 10, so that the blocking portion 40 defines an enclosing portion 50 on the first inorganic layer 10 inside the blocking portion 40. .
  • the first inorganic layer 10 may be formed on the substrate 1 by chemical vapor deposition or atomic layer deposition.
  • an organic layer 30 is disposed on the first inorganic layer 10.
  • the organic layer 30 is located in the enclosing portion 50 formed between the barrier portion 40 and the first inorganic layer 10.
  • the organic layer 30 is formed on the first inorganic layer 10 by an inkjet printing method, and the organic layer 30 does not overflow outside the barrier portion 40 during formation due to the definition of the surrounding portion 50.
  • a second inorganic layer 20 is disposed on the organic layer 30.
  • the first inorganic layer 10, the second inorganic layer 20 may also be formed on the organic layer 20 by chemical vapor deposition or atomic layer deposition. Moreover, the second inorganic layer 20 also extends outside the blocking portion 40, and the barrier portion 40 is covered.
  • an organic light-emitting device of the present invention includes a substrate 1, an organic light-emitting device 2, and the above-described package structure.
  • the organic light-emitting device 2 is disposed on the substrate 1, and the package structure is disposed on the substrate 1 and covers the organic light-emitting device 2.
  • the substrate 1 may be a glass substrate; the organic light emitting device 2 may be an OLED device.
  • the first inorganic layer 10, the organic layer 30, and the second inorganic layer 20 are sequentially stacked on the organic light-emitting device 2 to protect organic
  • the organic light-emitting layer of the light-emitting device 2 is not attacked by water and oxygen.
  • the barrier portion 40 is disposed on the periphery of the first inorganic layer 10, not covered by the first inorganic layer 10, the hydrophobicity of the barrier portion 40 is not weakened, and is effectively prevented during the process of forming the organic layer 30.
  • the forming material of the organic layer 30 overflows.
  • the blocking portion 40 does not need to have a larger distance from the effective light-emitting area of the organic light-emitting device 2, thereby effectively shortening the distance between the blocking portion 40 and the effective light-emitting region, thereby facilitating the miniaturization of the overall volume of the organic light-emitting device.

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Abstract

一种有机发光器件的封装结构及其制造方法、有机发光装置,有机发光器件的封装结构包括设置在基板(1)上并覆盖有机发光器件(2)的第一无机层(10)、设置在第一无机层周缘的阻挡部(40)、依次设置在第一无机层上的有机层(32)和第二无机层(20);阻挡部在第一无机层上界定出一个位于阻挡部内侧的包围部(50),有机层设置在包围部内。该有机发光器件的封装结构,在封装结构中,将阻挡部设置在第一有机层的周缘,不被其覆盖,避免阻挡部的疏水性被改变,保证阻挡部有效防止有机层的溢流,还有效缩短阻挡部和有机发光器件有效发光区的距离。

Description

说明书 发明名称:有机发光器件的封装结构及其制造方法、 有机发光装置 技术领域
[0001] 本发明涉及发光显示技术领域, 尤其涉及一种有机发光器件的封装结构及其制 造方法、 有机发光装置。
背景技术
[0002] OLED (Organic Light-Emitting Diode, 有机发光二极管) 器件中的阴极以及有 机发光材料由于易与空气中的水和氧气反应而失效, 因此需要使用封装材料对 0 LED器件进行封装, 而柔性 OLED也必然要求柔性的封装即 TFE。
[0003] TFE现在主要使用的结构为无机层、 有机层、 无机层交叠。 其中有机层形成的 方式为 IJP, 即用喷墨打印机 (Ink Jet Printer) 进行喷墨形成有机层。 由于 Ink ( 有机材料) 具有较好的流动性, 因此在 Panel (面板) 的两端需要形成类似于挡 板的 Bank用以防止 Ink溢流。 一般 Bank的形成一般为在 TFT制程中形成, 但在前 段制程中形成 Bank由于在 TFE制程中第一道制程为 CVD (无机层) , Bank会被 此层 CVD所覆盖, 因此 Bank原有的疏水性就会被改变, 无法有效防止 Ink有效溢 流, 同吋也会相应需要 Bank距离更大才能有效防止 Ink溢流。
技术问题
[0004] 本发明要解决的技术问题在于, 提供一种有效防止有机层溢流且有效缩短阻挡 部和有效发光区距离的有机发光器件的封装结构以及该封装结构的制造方法, 以及具有该封装结构的有机发光装置。
问题的解决方案
技术解决方案
[0005] 本发明解决其技术问题所采用的技术方案是: 提供一种有机发光器件的封装结 构, 包括设置在基板上并覆盖有机发光器件的第一无机层、 设置在所述第一无 机层周缘的阻挡部、 依次设置在所述第一无机层上的有机层和第二无机层;
[0006] 所述阻挡部在所述第一无机层上界定出一个位于所述阻挡部内侧的包围部, 所 述有机层设置在所述包围部内。 [0007] 本发明还提供一种有机发光器件的封装结构的制造方法, 包括以下步骤: [0008] Sl、 在基板上设置第一无机层, 所述第一无机层覆盖所述基板上的有机发光器 件;
[0009] S2、 在所述第一无机层的周缘设置阻挡部, 从而所述阻挡部在所述第一无机层 上界定出一个位于所述阻挡部内侧的包围部;
[0010] S3、 在所述第一无机层上设置有机层, 所述有机层位于所述包围部内;
[0011] S4、 在所述有机层上设置第二无机层。
[0012] 本发明还提供另一种有机发光器件的封装结构的制造方法, 包括以下步骤: [0013] Sl、 在 TFT制程中, 在基板上设置阻挡部; 所述阻挡部位于所述基板上有机发 光器件的外围;
[0014] S2、 采用掩模版将所述阻挡部挡住, 在所述基板上设置第一无机层; 所述第一 无机层覆盖所述有机发光器件, 并且所述阻挡部位于所述第一无机层的周缘;
[0015] S3、 在所述第一无机层上设置有机层; 所述有机层位于所述阻挡部和第一无机 层之间形成的包围部内;
[0016] S4、 在所述有机层上设置第二无机层。
[0017] 本发明还提供一种有机发光器件, 包括基板、 有机发光器件以及上述的封装结 构;
[0018] 所述有机发光器件设置在所述基板上, 所述封装结构设置在所述基板上并包覆 所述有机发光器件。
发明的有益效果
有益效果
[0019] 本发明的有益效果: 在封装结构中, 将阻挡部 (Bank) 设置在第一有机层的周 缘, 不被其覆盖, 避免阻挡部的疏水性被改变, 保证阻挡部有效防止有机层的 溢流, 还有效缩短阻挡部和有机发光器件有效发光区的距离。
对附图的简要说明
附图说明
[0020] 下面将结合附图及实施例对本发明作进一步说明, 附图中:
[0021] 图 1是本发明一实施例的有机发光器件的封装结构的结构示意图。 本发明的实施方式
[0022] 为了对本发明的技术特征、 目的和效果有更加清楚的理解, 现对照附图详细说 明本发明的具体实施方式。
[0023] 如图 1所示, 本发明一实施例的有机发光器件的封装结构, 包括设置在基板 1上 并覆盖有机发光器件 2的第一无机层 10、 设置在第一无机层 10周缘的阻挡部 40、 依次设置在第一无机层 10上的有机层 30和第二无机层 20。 阻挡部 40在第一无机 层 10上界定出一个位于阻挡部 40内侧的包围部 50, 该包围部 50也位于有机发光 器件 2的上方, 有机层 30设置在包围部 50内。
[0024] 有机发光器件 2可为 OLED器件; 基板 1可为玻璃基板。 第一无机层 10、 有机层 3 0和第二无机层 20在有机发光器件 2上的依次层叠设置, 保护有机发光器件 2的有 机发光层不受水氧侵蚀。 可以理解的是, 本发明实施例的封装结构也可以应用 在其他发光器件中, 例如 TFT器件。
[0025] 其中, 第一无机层 10作为包覆有机发光器件 2的第一层结构, 其可采用化学气 相沉积方式 (DVD) 或原子层沉积方式 (ALD) 形成在基板 1上。 如图 1所示, 该第一无机层 10的中间部分包覆有机发光器件 2的上表面和侧面, 边缘部分沿着 有机发光器件 2的侧面延伸至基板 1上。
[0026] 阻挡部 40在基板 1上位于第一无机层 10的周缘, 可位于第一无机层 10的周缘上 , 也可位于周缘的外侧。 阻挡部 40的高度大于第一无机层 10的高度, 较高的阻 挡部 40能够在喷墨打印机进行喷墨打印形成有机层 30吋, 有效阻止流动性较强 的有机材料溢流, 从而使有机层 30能够完全在设置在包围部 50内。
[0027] 阻挡部 40可采用掩模版结合化学气相沉积法或原子层沉积法形成在第一无机层 10上, 或者采用化学气相沉积方式结合干法蚀刻形成在第一无机层 10上。
[0028] 阻挡部 40为具有疏水性的绝缘材料制成, 从而不会与有机层 30发生相互惨和等 情况, 使得有机层 30在其内侧形成一定的形状。 作为选择, 阻挡部 40可采用氧 化硅 (SiOx) 或氮化硅 (SiNx) 等制成。
[0029] 由于阻挡部 40设置在第一无机层 10的周缘, 不被第一无机层 10覆盖, 因此阻挡 部 40的疏水性不被减弱, 在有机层 30制成过程中有效防止有机层 30的形成材料 溢流。 此外, 阻挡部 40也不需要有与有机发光器件 2的有效发光区更大的距离设 置, 有效缩短阻挡部 40与有效发光区的距离, 进而有利于有机发光装置整体体 积的小化设置。
[0030] 有机层 30可采用喷墨打印法 (IJP) 形成在第一无机层 10上, 从而有机层 30为 油墨 (Ink) 等有机材料形成的有机膜层。 由于阻挡部 40在第一无机层 10周缘的 设置, 在有机层 30制备吋, 油墨受阻挡部 40的阻挡, 不会流到阻挡部 40的外侧
[0031] 本实施例中, 有机层 30包括对应在有机发光器件 2上方的平整部 31、 以及连接 在平整部31外周并对应在有机发光器件 2周侧的斜坡部 32。 斜坡部 32远离平整部
31的侧面抵止在阻挡部 40的侧面。 斜坡部 32的侧面高度低于或平齐于阻挡部 40 的侧面高度。
[0032] 有机层 30的具体材料及制备方法均可通过现有技术实现。
[0033] 第二无机层 20设置在有机层 30上, 并且包覆阻挡部 40。 对应有机层 30的结构组 成, 该第二无机层 20覆盖有机层 30的平整部 31和斜坡部 32, 并且延伸至阻挡 40 部的外周, 将阻挡部 40覆盖。 第二无机层 20的边缘部分进一步还可延伸至与第 一无机层 10相接。
[0034] 同理于第一无机层 10, 第二无机层 20可采用化学气相沉积方式 (DVD) 或原子 层沉积方式 (ALD) 形成在有机层 30上。 第二无机层 20和第一无机层 10可采用 相同的材料制成, 且具体的材料及制备方法均可通过现有技术实现。
[0035] 参考图 1, 本发明的有机发光器件的封装结构的制造方法的一个实施例中, 可 包括以下步骤:
[0036] Sl、 在基板 1上设置第一无机层 10, 第一无机层 10覆盖基板 1上的有机发光器件
2。
[0037] 第一无机层 10可采用化学气相沉积方式或原子层沉积方式形成在基板 1上。
[0038] S2、 在第一无机层 10的周缘设置阻挡部 40, 从而阻挡部 40在第一无机层 10上界 定出一个位于阻挡部 40内侧的包围部 50。
[0039] 阻挡部 40可采用掩模版结合化学气相沉积法或原子层沉积法形成在第一无机层
10上, 或者采用化学气相沉积方式结合干法蚀刻形成在第一无机层 10上。 [0040] S3、 在第一无机层 10上设置有机层 30, 有机层 30位于包围部 50内。
[0041] 有机层 30采用喷墨打印法形成在第一无机层 10上, 由于有包围部 50的限定, 使 得有机层 30在形成过程中不会溢流至阻挡部 40外。
[0042] S4、 在有机层 30上设置第二无机层 20。
[0043] 同理第一无机层 10, 第二无机层 20也可采用化学气相沉积法或原子层沉积法形 成在有机层 20上。 并且, 第二无机层 20还延伸至阻挡部 40外, 将阻挡部 40包覆
[0044] 参考图 1, 本发明的有机发光器件的封装结构的制造方法的另一个实施例中, 可包括以下步骤:
[0045] Sl、 在 TFT制程中, 在基板 1上设置阻挡部 40; 阻挡部 40位于基板 1上有机发光 器件 2的外围。
[0046] S2、 采用掩模版将阻挡部 40挡住, 在基板 1上设置第一无机层 10。
[0047] 第一无机层 10覆盖有机发光器件 2, 并且阻挡部 40位于第一无机层 10的周缘, 从而阻挡部 40在第一无机层 10上界定出一个位于阻挡部 40内侧的包围部 50。
[0048] 第一无机层 10可采用化学气相沉积方式或原子层沉积方式形成在基板 1上。
[0049] S3、 在第一无机层 10上设置有机层 30。
[0050] 有机层 30位于阻挡部 40和第一无机层 10之间形成的包围部 50内。
[0051] 有机层 30采用喷墨打印法形成在第一无机层 10上, 由于有包围部 50的限定, 使 得有机层 30在形成过程中不会溢流至阻挡部 40外。
[0052] S4、 在有机层 30上设置第二无机层 20。
[0053] 同理第一无机层 10, 第二无机层 20也可采用化学气相沉积法或原子层沉积法形 成在有机层 20上。 并且, 第二无机层 20还延伸至阻挡部 40外, 将阻挡部 40包覆
[0054] 参考图 1, 本发明的有机发光装置, 包括基板 1、 有机发光器件 2以及上述的封 装结构。 有机发光器件 2设置在基板 1上, 封装结构设置在基板 1上并包覆有机发 光器件 2。
[0055] 基板 1可为玻璃基板; 有机发光器件 2可为 OLED器件。 封装结构中, 第一无机 层 10、 有机层 30和第二无机层 20在有机发光器件 2上的依次层叠设置, 保护有机 发光器件 2的有机发光层不受水氧侵蚀。
[0056] 封装结构中, 由于阻挡部 40设置在第一无机层 10的周缘, 不被第一无机层 10覆 盖, 阻挡部 40的疏水性不被减弱, 在有机层 30制成过程中有效防止有机层 30的 形成材料溢流。 此外, 阻挡部 40也不需要有与有机发光器件 2的有效发光区更大 的距离设置, 有效缩短阻挡部 40与有效发光区的距离, 进而有利于有机发光装 置整体体积的小化设置。
[0057] 以上所述仅为本发明的实施例, 并非因此限制本发明的专利范围, 凡是利用本 发明说明书及附图内容所作的等效结构或等效流程变换, 或直接或间接运用在 其他相关的技术领域, 均同理包括在本发明的专利保护范围内。

Claims

权利要求书
一种有机发光器件的封装结构, 其特征在于, 包括设置在基板 (1 ) 上并覆盖有机发光器件 (2) 的第一无机层 (10) 、 设置在所述第一 无机层 (10) 周缘的阻挡部 (40) 、 依次设置在所述第一无机层 (10 ) 上的有机层 (30) 和第二无机层 (20) ;
所述阻挡部 (40) 在所述第一无机层 (10) 上界定出一个位于所述阻 挡部 (40) 内侧的包围部 (50) , 所述有机层 (30) 设置在所述包围 部 (50) 内。
根据权利要求 1所述的封装结构, 其特征在于, 所述第二无机层 (20 ) 位于所述有机层 (30) 上并包覆所述阻挡部 (40) 。
根据权利要求 1所述的封装结构, 其特征在于, 所述有机层 (30) 包 括对应在所述有机发光器件 (2) 上方的平整部 (31 ) 、 以及连接在 所述平整部 (31 ) 外周并对应在所述有机发光器件 (2) 周侧的斜坡 部 (32) ; 所述斜坡部 (32) 远离所述平整部 (31 ) 的侧面抵止在所 述阻挡部 (40) 的侧面。
根据权利要求 3所述的封装结构, 其特征在于, 所述第二无机层 (20 ) 覆盖所述平整部 (31 ) 和斜坡部 (32) , 并且延伸至所述阻挡部 ( 40) 的外周, 将所述阻挡部 (40) 覆盖。
根据权利要求 1所述的封装结构, 其特征在于, 所述阻挡部 (40) 由 疏水性绝缘材料制成。
根据权利要求 5所述的封装结构, 其特征在于, 所述阻挡部 (40) 采 用氮化硅或氧化硅制成。
一种有机发光器件的封装结构的制造方法, 其特征在于, 包括以下步
51、 在基板 (1 ) 上设置第一无机层 (10) , 所述第一无机层 (10) 覆盖所述基板 (1 ) 上的有机发光器件 (2) ;
52、 在所述第一无机层 (10) 的周缘设置阻挡部 (40) , 从而所述阻 挡部 (40) 在所述第一无机层 (10) 上界定出一个位于所述阻挡部 ( 40) 内侧的包围部 (50) ;
53、 在所述第一无机层 (10) 上设置有机层 (30) , 所述有机层 (30 ) 位于所述包围部 (50) 内;
54、 在所述有机层 (30) 上设置第二无机层 (20) 。
根据权利要求 7所述的制造方法, 其特征在于, 步骤 S1中, 所述第一 无机层 (10) 采用化学气相沉积方式或原子层沉积方式形成在所述基 板 (1) ±;
步骤 S3中, 所述有机层 (30) 采用喷墨打印法形成在所述第一无机层 (10) 上;
步骤 S4中, 所述第二无机层 (20) 采用化学气相沉积法或原子层沉积 法形成在所述有机层 (30) 上。
根据权利要求 7所述的制造方法, 其特征在于, 步骤 S2中, 所述阻挡 部 (40) 采用掩模版结合化学气相沉积法或原子层沉积法形成在所述 第一无机层 (10) 上, 或者采用化学气相沉积方式结合干法蚀刻形成 在所述第一无机层 (10) 上。
一种有机发光器件的封装结构的制造方法, 其特征在于, 包括以下步 骤:
51、 在 TFT制程中, 在基板 (1) 上设置阻挡部 (40) ; 所述阻挡部 (40) 位于所述基板 (1) 上有机发光器件 (2) 的外围;
52、 采用掩模版将所述阻挡部 (40) 挡住, 在所述基板 (1) 上设置 第一无机层 (10) ; 所述第一无机层 (10) 覆盖所述有机发光器件 ( 2) , 并且所述阻挡部 (40) 位于所述第一无机层 (10) 的周缘;
53、 在所述第一无机层 (10) 上设置有机层 (30) ; 所述有机层 (30 ) 位于所述阻挡部 (40) 和第一无机层 (10) 之间形成的包围部 (50 ) 内;
54、 在所述有机层 (30) 上设置第二无机层 (20) 。
根据权利要求 10所述的制造方法, 其特征在于, 步骤 S2中, 所述第一 无机层 (10) 采用化学气相沉积方式或原子层沉积方式形成在所述基 板 ( 1) ± ;
步骤 S3中, 所述有机层 (30) 采用喷墨打印法形成在所述第一无机层 ( 10) 上;
步骤 S4中, 所述第二无机层 (20) 采用化学气相沉积法或原子层沉积 法形成在所述有机层 (30) 上。
[权利要求 12] —种有机发光装置, 其特征在于, 包括基板 (1) 、 有机发光器件 (2
) 以及封装结构;
所述封装结构为权利要求 1-6任一项所述的封装结构; 或者, 所述封 装结构为权利要求 7-9任一项所述的制造方法或权利要求 10-11任一项 所述的制造方法制得的封装结构;
所述有机发光器件 (2) 设置在所述基板 (1) 上, 所述封装结构设置 在所述基板 (1) 上并包覆所述有机发光器件 (2) 。
PCT/CN2017/105745 2017-10-11 2017-10-11 有机发光器件的封装结构及其制造方法、有机发光装置 WO2019071477A1 (zh)

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