WO2019058855A1 - Dispositif de traitement au plasma - Google Patents

Dispositif de traitement au plasma Download PDF

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Publication number
WO2019058855A1
WO2019058855A1 PCT/JP2018/031000 JP2018031000W WO2019058855A1 WO 2019058855 A1 WO2019058855 A1 WO 2019058855A1 JP 2018031000 W JP2018031000 W JP 2018031000W WO 2019058855 A1 WO2019058855 A1 WO 2019058855A1
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WO
WIPO (PCT)
Prior art keywords
inner conductor
processing apparatus
plasma processing
plasma
conductor
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PCT/JP2018/031000
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English (en)
Japanese (ja)
Inventor
建典 笹井
浩孝 豊田
Original Assignee
住友理工株式会社
国立大学法人名古屋大学
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Application filed by 住友理工株式会社, 国立大学法人名古屋大学 filed Critical 住友理工株式会社
Publication of WO2019058855A1 publication Critical patent/WO2019058855A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Definitions

  • the technical field of the present specification relates to a plasma processing apparatus for irradiating a liquid with plasma.
  • Plasma technology is applied to the fields of electricity, chemistry, and materials. Plasma generates highly chemically reactive radicals and ultraviolet light in addition to electrons and cations. Radicals are used, for example, for film formation and etching of semiconductors. Ultraviolet light is used, for example, for sterilization. Such abundant plasma products have broadened the base of plasma technology applications.
  • Patent Document 1 discloses a technique in which microwave plasma is used for plasma treatment of a liquid such as drainage.
  • Patent Document 1 discloses a technique in which a microwave is made to enter from a direction orthogonal to the flow direction of a liquid to be treated. Then, plasma is generated around the cross section of the annular flow path.
  • the plasma is likely to stand at a position in the 0 ° direction where microwaves are incident to the annular flow path, and the plasma is unlikely to occur at a position in the 180 ° direction where microwaves are emitted. That is, although it is desired to generate an annular plasma in an annular region around the flow path, there is a possibility that a semicircular plasma may be generated. Even if an annular plasma is generated, a phenomenon occurs in which the strength of the plasma becomes stronger in the microwave incident direction (0 ° direction). In the technique of Patent Document 1, it is difficult to perform uniform plasma processing on a liquid.
  • the technique of the present specification is made to solve the problems of the above-described conventional techniques. That is, it is an object of the present invention to provide a plasma processing apparatus which aims to carry out uniform plasma processing on a liquid.
  • a plasma processing apparatus comprises a first inner conductor comprising a first end, a second inner conductor comprising a second end, and a first inner conductor and a second inner conductor. It has a coaxial waveguide provided with an outer conductor located outside, a microwave generation part which generates microwaves to be propagated to the coaxial waveguide, and a plasma generation region which generates plasma.
  • the first inner conductor and the second inner conductor have a flow path for flowing a liquid therein.
  • the first end of the first inner conductor and the second end of the second inner conductor face in a noncontact manner.
  • the plasma generation region is a region along the facing point of the first end of the first inner conductor and the second end of the second inner conductor.
  • This plasma processing apparatus can generate a uniform annular plasma.
  • the annular includes an annular shape and a ring shape having a polygonal cross-sectional shape. Since uniform plasma can be generated, plasma treatment can be uniformly performed on the liquid flowing in the flow path. In addition, the liquid can be plasma-treated continuously in-line instead of batch-treatment. And, the diameters of the first inner conductor and the second inner conductor are relatively small. Therefore, relatively large surface current flows in the first inner conductor and the second inner conductor. As a result, a larger electric field is generated between the first end and the second end. Therefore, this plasma processing apparatus can generate stronger plasma.
  • a plasma processing apparatus is provided herein that is intended to perform uniform plasma processing on a liquid.
  • FIG. 1 is a schematic block diagram of a plasma processing apparatus 100 according to the first embodiment.
  • the plasma processing apparatus 100 generates a plasma using a waveguide for guiding a microwave.
  • the plasma processing apparatus 100 shorts the first inner conductor 110, the second inner conductor 120, the outer conductor 130, the injection pipe 141, the discharge pipe 142, the microwave generator 150, the dielectric 160, and the like. And a plunger 170.
  • the plasma processing apparatus 100 has a coaxial waveguide provided with a first inner conductor 110, a second inner conductor 120, and an outer conductor 130. Therefore, the central axes of the first inner conductor 110, the second inner conductor 120, and the outer conductor 130 are common.
  • the microwaves propagate in a space MP1 between the first inner conductor 110 and the second inner conductor 120, and the outer conductor 130, as shown in FIG.
  • the first inner conductor 110 is an inner waveguide in a coaxial waveguide. Therefore, the first inner conductor 110 is disposed inside the outer conductor 130.
  • the first inner conductor 110 has a first end E1.
  • the first end E1 is one of two ends in the longitudinal direction of the first inner conductor 110.
  • the first inner conductor 110 has a first flow passage LP1 for flowing a liquid therein.
  • the first inner conductor 110 has a shape close to a cylindrical shape.
  • the material of the first inner conductor 110 is copper, brass, or another metal. Also, the surface of the first inner conductor 110 may be plated.
  • the second inner conductor 120 is an inner waveguide in a coaxial waveguide. Therefore, the second inner conductor 120 is disposed inside the outer conductor 130.
  • the second inner conductor 120 has a second end E2.
  • the second end E2 is one end of two ends in the longitudinal direction of the second inner conductor 120.
  • the second inner conductor 120 has a second flow path LP2 for flowing a liquid therein.
  • the second inner conductor 120 has a shape close to a cylindrical shape.
  • the material of the second inner conductor 120 is copper, brass, or another metal. Also, the surface of the second inner conductor 120 may be plated.
  • the outer conductor 130 is an outer waveguide in a coaxial waveguide. Therefore, the outer conductor 130 is disposed outside the first inner conductor 110 and the second inner conductor 120. That is, the outer conductor 130 is located outside the first inner conductor 110 and the second inner conductor 120 when viewed from the center line of the first inner conductor 110 and the second inner conductor 120.
  • the shape of the outer conductor 130 is cylindrical.
  • the material of the outer conductor 130 is copper, brass, or another metal. Also, the surface of the outer conductor 130 may be plated.
  • the injection pipe 141 is a pipe for delivering a liquid to the first flow path LP1.
  • the material of the injection pipe 141 is copper, brass, other metals, or an insulator.
  • the material of the injection pipe 141 may be the same as that of the first inner conductor 110.
  • the discharge pipe 142 is a pipe for discharging the liquid from the second flow path LP2.
  • the material of the discharge pipe 142 is copper, brass, other metals, or an insulator.
  • the microwave generation unit 150 is a device for generating a microwave. This microwave is for propagating to the coaxial waveguide.
  • the microwave generator 150 has, for example, a magnetron.
  • the microwave generation unit 150 may appropriately include an apparatus such as an isolator.
  • the frequency of the microwaves generated by the microwave generator 150 is, for example, 2.45 GHz. Of course, other frequencies may be used. These are examples, and the configuration of the microwave generation unit 150 may be different from the above.
  • the dielectric 160 transmits part of the microwave and reflects the remaining part.
  • the dielectric 160 is disposed along a facing point between the first end E1 of the first inner conductor 110 and the second end E2 of the second inner conductor 120 and is disposed in an area outside the facing point There is.
  • the dielectric 160 is disposed between the first inner conductor 110 and the second inner conductor 120 to the outer conductor 130 so as to be sandwiched therebetween.
  • the material of the dielectric 160 is, for example, a quartz tube or alumina. Of course, other materials may be used.
  • the short plunger 170 reflects microwaves.
  • the short plunger 170 is disposed in a state of being sandwiched between the second inner conductor 120 and the outer conductor 130.
  • a standing wave can be generated in the space between the dielectric 160 and the short plunger 170. Generating a standing wave makes it easier to excite the plasma. Also, the excited plasma is stabilized.
  • the short plunger 170 may slightly absorb part of the microwaves.
  • the injection pipe 141, the first flow path LP1 of the first inner conductor 110, the second flow path LP2 of the second inner conductor 120, and the discharge pipe 142 communicate with each other. Then, from the upstream side of the liquid flow, the injection pipe 141, the portion of the first inner conductor 110, the portion of the second inner conductor 120, and the discharge pipe 142 are arranged in this order. Therefore, the liquid flows in the order of the injection pipe 141, the first flow path LP1, the second flow path LP2, and the discharge pipe 142.
  • the direction of the central axis of at least one of the first inner conductor 110 and the second inner conductor 120 is parallel to the flow direction of the liquid in the first flow passage LP1 or the second flow passage LP2.
  • the direction of the central axis of the outer conductor 130 and the flow direction of the liquid in the first flow passage LP1 or the second flow passage LP2 are parallel to each other.
  • FIG. 2 is a cross-sectional view showing the periphery of the face-to-face locations of the first inner conductor 110 and the second inner conductor 120.
  • the first inner conductor 110 and the second inner conductor 120 are separate bodies.
  • the first inner conductor 110 and the second inner conductor 120 face each other in a noncontact manner.
  • the central axis of the first inner conductor 110 and the central axis of the second inner conductor 120 are common to the central axis of the outer conductor 130.
  • the inner diameter of the first inner conductor 110 and the inner diameter of the second inner conductor 120 are almost the same. However, in some cases, the inner diameter of the first inner conductor 110 and the inner diameter of the second inner conductor 120 may be somewhat different.
  • the first inner conductor 110 has a first protrusion 111.
  • the first convex portion 111 is formed at a first end E1 which is one end surface of the first inner conductor 110.
  • the first convex portion 111 protrudes from the first end E1 toward the second inner conductor 120.
  • the shape of the first convex portion 111 is annular. The center of the annular ring coincides with the central axis of the first inner conductor 110.
  • the second inner conductor 120 has a second protrusion 121.
  • the second convex portion 121 is formed at a second end E2 which is one end surface of the second inner conductor 120.
  • the second convex portion 121 protrudes toward the first inner conductor 110 from the second end E2.
  • the shape of the second convex portion 121 is annular. The center of the annular ring coincides with the central axis of the second inner conductor 120.
  • the first convex portion 111 and the second convex portion 121 face each other in a non-contact state. Therefore, the first convex portion 111 and the second convex portion 121 constitute a slit S1.
  • the width of the slit S1 is about 0.05 mm or more and 1 mm or less.
  • the annular diameter of the first convex portion 111 and the annular diameter of the second convex portion 121 are the same.
  • the plasma processing apparatus 100 has a plasma generation region PG1 for generating plasma.
  • the plasma generation region PG1 is a region along the slit S1. That is, the plasma generation region PG1 is a region along the facing point of the first convex portion 111 of the first inner conductor 110 and the second convex portion 121 of the second inner conductor 120.
  • the plasma generation region PG ⁇ b> 1 may be wider than the widths of the first convex portion 111 and the second convex portion 121.
  • the plasma generation region PG1 is a facing portion of the first convex portion 111 of the first inner conductor 110 and the second convex portion 121 of the second inner conductor 120, and includes a region outside the facing portion. It may be
  • the plasma generation region PG1 is a facing portion of the first convex portion 111 of the first inner conductor 110 and the second convex portion 121 of the second inner conductor 120, and includes a region on the inner side than the facing portion. It may be
  • the “region along the facing point of the first convex portion 111 of the first inner conductor 110 and the second convex portion 121 of the second inner conductor 120”, which is the plasma generation region PG1, is the first A first region between the convex portion 111 and the second convex portion 121, and a region inside and outside the radial direction of the first inner conductor 110 and the second inner conductor 120 from the first region And an area including That is, it is an area along the facing point of the first end E1 of the first inner conductor 110 and the second end E2 of the second inner conductor 120.
  • the 1st convex part 111 and the 2nd convex part 121 are annular ring shape. Therefore, the plasma generation region PG1 is also annular. The plasma generation region PG1 is not likely to be immersed by the liquid flowing in the first flow passage LP1 and the second flow passage LP2. Therefore, the plasma processing apparatus 100 can stably generate plasma while plasma processing a liquid.
  • the first inner conductor 110 has a first inclined surface 112.
  • the first inclined surface 112 protrudes from the inner peripheral portion of the first inner conductor 110 toward the center of the first inner conductor 110. Then, the first inclined surface 112 protrudes toward the center of the first inner conductor 110 as being closer to the first convex portion 111. Therefore, the first flow passage LP1 narrows toward the first end E1.
  • the first inclined surface 112 is formed to go around the inner circumference of the first inner conductor 110.
  • the second inner conductor 120 has a second inclined surface 122.
  • the second inclined surface 122 protrudes from the inner peripheral portion of the second inner conductor 120 toward the center of the second inner conductor 120. Then, the second inclined surface 122 protrudes toward the center of the second inner conductor 120 as being closer to the second convex portion 121. Therefore, the second flow path LP2 narrows toward the second end E2.
  • the second inclined surface 122 is formed to go around the inner periphery of the second inner conductor 120.
  • the first flow passage LP1 and the second flow passage LP2 become narrower as the position is closer to the plasma generation region PG1. Therefore, the flow velocity of the liquid flowing through the first flow path LP1 and the second flow path LP2 is very large around the plasma generation region PG1. As a result, the pressure of the liquid becomes very small at the portion facing the plasma generation region PG1. Specifically, the liquid under one atmosphere can be lowered to about 0.1 atmosphere.
  • the plasma generation region is adjusted by adjusting the inclination of the first inclined surface 112 and the inclination of the second inclined surface 122 and the widths of the first flow passage LP1 and the second flow passage LP2 around the plasma generation region PG1.
  • the pressure of PG1 can be set to 0.1 atm or more and 1 atm or less. Furthermore, it is also possible to achieve lower pressures.
  • the plasma processing apparatus 100 applies the Venturi effect.
  • the microwave generation unit 150 generates microwaves and propagates the microwaves to the coaxial waveguide. Thereby, the microwaves propagate between the first inner conductor 110 and the outer conductor 130 in the direction of the arrow M1 in FIG. A portion of the microwave passes through the dielectric 160 and travels to the short plunger 170. Then, a standing wave is generated in the space K1 between the dielectric 160 and the short plunger 170.
  • the plasma generated in the plasma generation region PG1 irradiates the liquid flowing from the first flow passage LP1 to the second flow passage LP2 with a plasma product.
  • plasma products include electrons, cations, radicals, and ultraviolet light.
  • the plasma processing apparatus 100 of the present embodiment can generate uniform annular plasma. Therefore, the plasma processing can be uniformly performed on the liquid flowing through the first flow path LP1 and the second flow path LP2.
  • plasma can be generated under reduced pressure without using a pressure reducing pump or the like.
  • the liquid can be plasma-treated continuously in-line instead of batch-treatment.
  • the electric field strength between the 1st convex part 111 and the 2nd convex part 121 is very strong. Therefore, the plasma processing apparatus 100 can generate very strong plasma.
  • Dielectric A plasma processing apparatus 100 of the present embodiment has a dielectric 160. However, the plasma processing apparatus may not have the dielectric 160.
  • Dielectric shape As shown in FIG. 3, instead of the dielectric 160, an insulator 260 which insulates the first inner conductor 110 and the second inner conductor 120 may be provided.
  • the insulator 260 insulates the first inner conductor 110 and the second inner conductor 120, and plasma is generated from the space MP1 between the first inner conductor 110 and the second inner conductor 120 and the outer conductor 130. Leakage of gas into the generation region PG1 can be suppressed. Then, the insulator 260 may be disposed at a position not overlapping the microwave propagation region.
  • the first inner conductor 110, the second inner conductor 120, and the outer conductor 130 have a substantially cylindrical shape.
  • the first inner conductor 110, the second inner conductor 120, and the outer conductor 130 may be tapered.
  • the first inner conductor 110, the second inner conductor 120, and the outer conductor 130 may have a cylindrical shape having a polygonal cross section. In this case, it is preferable to match the shape of the outer tube with the shape of the waveguide.
  • the liquid flows naturally through the first flow passage LP1 and the second flow passage LP2.
  • the plasma processing apparatus may have a pump for delivering a liquid. This can increase the flow velocity of the liquid. That is, the amount of liquid processed at one time increases. In addition, the pressure around the plasma generation region PG1 can be further reduced.
  • the microwave is propagated to the space MP1 after flowing the liquid to the first flow path LP1.
  • the microwave may be allowed to flow in the space MP1 before the liquid is allowed to flow in the first flow path LP1. This is because the plasma processing apparatus 100 can generate plasma in the plasma generation region PG1 even under atmospheric pressure.
  • microwaves may be propagated to the space MP1, and after generating plasma, the liquid to be treated may be flowed to the first flow path LP1. At this time, the dummy liquid is not used for plasma processing, and is used only to generate a reduced pressure state in the plasma generation region PG1.
  • a standing wave is generated in the space K1 between the dielectric 160 and the short plunger 170.
  • the material of the dielectric 160 and the distance between the dielectric 160 and the short plunger 170 are selected so that a strong electric field is applied between the first convex portion 111 and the second convex portion 121. It is good to do.
  • the plasma processing apparatus 100 of the present embodiment can generate uniform annular plasma. Therefore, the plasma processing can be uniformly performed on the liquid flowing through the first flow path LP1 and the second flow path LP2.
  • plasma can be generated under reduced pressure without using a pressure reducing pump or the like.
  • the liquid can be plasma-treated continuously in-line instead of batch-treatment. And the electric field strength between the 1st convex part 111 and the 2nd convex part 121 is very strong. Therefore, the plasma processing apparatus 100 can generate very strong plasma.
  • the plasma processing apparatus includes a first inner conductor having a first end, a second inner conductor having a second end, a first inner conductor, and a second inner conductor. And an outer conductor located on the outer side of the waveguide, a microwave generation unit generating microwaves to be propagated to the coaxial waveguide, and a plasma generation region generating plasma.
  • the first inner conductor and the second inner conductor have a flow path for flowing a liquid therein.
  • the first end of the first inner conductor and the second end of the second inner conductor face in a noncontact manner.
  • the plasma generation region is a region along the facing point of the first end of the first inner conductor and the second end of the second inner conductor.
  • the first inner conductor has a first convex portion protruding from the first end toward the second inner conductor.
  • the second inner conductor has a second protrusion projecting from the second end toward the first inner conductor.
  • the first convex portion and the second convex portion face each other in a non-contact manner.
  • the first inner conductor has a first inclined surface in which the flow path narrows closer to the first end at the inner peripheral portion of the first inner conductor.
  • the second inner conductor has a second inclined surface in which the flow path narrows closer to the second end on the inner peripheral portion of the second inner conductor.
  • a plasma processing apparatus includes a dielectric in a region along a facing point between a first end of a first inner conductor and a second end of a second inner conductor and outside the facing point.
  • the dielectric is disposed from the first and second inner conductors to the outer conductor.
  • the plasma processing apparatus in the seventh aspect has a plunger between the second inner conductor and the outer conductor.
  • the direction of the central axis of at least one of the first inner conductor and the second inner conductor is parallel to the flow direction of the liquid in the flow path.

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

Le but de la présente invention est de fournir un dispositif de traitement au plasma qui effectue un traitement par plasma uniforme sur un liquide. Ce dispositif de traitement au plasma (100) comprend : un guide d'ondes coaxial comprenant un premier conducteur interne (110), un second conducteur interne (120) et un conducteur externe (130); une unité de génération de micro-ondes (150); et une région de génération de plasma (PG1). Le premier conducteur interne (110) et le second conducteur interne (120) ont, respectivement, un premier chemin d'écoulement (LP1) et un second chemin d'écoulement (LP2) pour permettre à un liquide de s'y écouler. Une première saillie (111) du premier conducteur interne (110) et une seconde saillie (121) du second conducteur interne (120) sont opposées l'une à l'autre dans un état sans contact. La région de génération de plasma (PG1) est une région le long de laquelle la première saillie (111) du premier conducteur interne (110) et la seconde saillie (121) du second conducteur interne (120) sont opposées l'une à l'autre.
PCT/JP2018/031000 2017-09-20 2018-08-22 Dispositif de traitement au plasma WO2019058855A1 (fr)

Applications Claiming Priority (2)

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JP2017-180127 2017-09-20
JP2017180127A JP2019055352A (ja) 2017-09-20 2017-09-20 プラズマ処理装置

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WO2019058855A1 true WO2019058855A1 (fr) 2019-03-28

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10156176A (ja) * 1996-11-28 1998-06-16 Aea Technol Plc プラズマガス処理
WO2008138504A1 (fr) * 2007-05-15 2008-11-20 Max-Planck-Gesellschaft Zur Source de plasma
JP2010129327A (ja) * 2008-11-27 2010-06-10 Tokai Rubber Ind Ltd マイクロ波プラズマ処理装置
JP2013109875A (ja) * 2011-11-18 2013-06-06 Tokai Rubber Ind Ltd マイクロ波プラズマ処理装置
JP2015050010A (ja) * 2013-08-30 2015-03-16 国立大学法人名古屋大学 プラズマ発生装置およびその利用

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10156176A (ja) * 1996-11-28 1998-06-16 Aea Technol Plc プラズマガス処理
WO2008138504A1 (fr) * 2007-05-15 2008-11-20 Max-Planck-Gesellschaft Zur Source de plasma
JP2010129327A (ja) * 2008-11-27 2010-06-10 Tokai Rubber Ind Ltd マイクロ波プラズマ処理装置
JP2013109875A (ja) * 2011-11-18 2013-06-06 Tokai Rubber Ind Ltd マイクロ波プラズマ処理装置
JP2015050010A (ja) * 2013-08-30 2015-03-16 国立大学法人名古屋大学 プラズマ発生装置およびその利用

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