WO2019056512A1 - 一种显示面板和显示装置 - Google Patents

一种显示面板和显示装置 Download PDF

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WO2019056512A1
WO2019056512A1 PCT/CN2017/109498 CN2017109498W WO2019056512A1 WO 2019056512 A1 WO2019056512 A1 WO 2019056512A1 CN 2017109498 W CN2017109498 W CN 2017109498W WO 2019056512 A1 WO2019056512 A1 WO 2019056512A1
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layer
film layer
display panel
metal
thickness
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French (fr)
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王幸
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present invention relates to the field of display panel manufacturing, and in particular to a display panel and a display device.
  • Flexible display technology is the next generation of mainstream display technology.
  • the flexible display panel is mainly driven by an active matrix low-temperature polysilicon thin film transistor.
  • the manufacturing process in order to ensure the adhesion of the anode film layer of the display panel, it is necessary to make an equidistant circle on the anode film layer outside the display area or Square hole.
  • the technical problem of the existing flexible display panel packaging structure is that it is easy to cause the anode film layer to pierce the lower organic film layer in the subsequent packaging process, and the anode film layer is short-circuited with the source and drain layers, thereby causing the driving circuit to fail to work normally.
  • the entire display panel screen is abnormal.
  • the technical problem to be solved by the present invention is to provide a display panel and a display device, which prevent the anode film layer from piercing the lower organic film layer, improve the adhesion between the anode film layer and the lower film layer, and ensure the normal driving of the circuit outside the display area. normal display.
  • an embodiment of the present invention provides a display panel including: a substrate film layer; an organic film layer disposed on the substrate film layer; a flat layer disposed on the organic film layer; formed on the flat layer
  • the functional layer, the functional layer includes at least a positive film layer, wherein: an inorganic insulating film layer is further disposed between the positive film layer and the flat layer pattern, and the inorganic insulating film layer is consistent with the pattern of the flat layer.
  • the inorganic insulating film layer and the pattern on the flat layer are formed by a photomask and a dry etching technique.
  • the organic thin film layer includes: a buffer layer, an active layer, a gate insulating layer, and a first metal layer sequentially formed on the substrate film layer; wherein: the buffer layer has a thickness ranging from 200 to 300 nm, The thickness of the active layer ranges from 40 to 50 nm, the thickness of the gate insulating layer ranges from 50 to 200 nm, and the material of the first metal layer is metal Mo, and the thickness ranges from 150 to 250 nm.
  • the organic thin film layer further includes: a second insulating layer and a second metal layer sequentially formed on the first metal layer; wherein: the second insulating layer has a thickness ranging from 50 to 200 nm, and the second metal layer is made of a metal Mo has a thickness ranging from 150 to 250 nm, and the second insulating layer and the second metal layer are patterned by photolithography and dry etching techniques.
  • the organic thin film layer further includes: an interlayer insulating layer and a source/drain metal layer sequentially formed on the second metal layer, wherein: the interlayer insulating layer has a thickness ranging from 500 to 700 nm, and the source and drain metal layers are connected Below the flat layer, the source and drain metal layers are made of titanium and/or aluminum and have a thickness in the range of 400 to 600 nm.
  • the functional layer structure further includes: a pixel defining layer, a light emitting layer and a cathode layer which are sequentially formed on the anode film layer.
  • the material used for the inorganic insulating film layer is silicon oxide, and the thickness thereof ranges from 50 to 200 nm.
  • the material used for the anode film layer is indium oxide and silver, and the thickness of the anode film layer ranges from 100 to 250 nm; the material used for the flat layer is polyimide, and the thickness range thereof is 1.5 to 3 um.
  • the material of the substrate film layer is polyimide, and the thickness thereof ranges from 10 to 20 um.
  • the present invention also discloses a display panel, comprising: a substrate film layer; an organic film layer disposed on the substrate film layer; a flat layer disposed on the organic film layer; formed on the flat layer
  • the functional layer includes at least a positive film layer, wherein: an inorganic insulating film layer is further disposed between the positive film layer and the flat layer pattern, and the inorganic insulating film layer is consistent with the pattern of the flat layer;
  • the organic film layer includes: a buffer layer, an active layer, a gate insulating layer, and a first metal layer formed on the substrate film layer; wherein: the buffer layer has a thickness ranging from 200 to 300 nm, and the active layer has a thickness ranging from 40 to 50 nm.
  • the thickness of the grade insulating layer ranges from 50 to 200 nm, and the material of the first metal layer is metal Mo, and the thickness thereof ranges from 150 to 250 nm.
  • the material used for the inorganic insulating film layer is silicon oxide, and the thickness thereof ranges from 50 to 200 nm.
  • the material used for the anode film layer is indium oxide and silver, and the thickness of the anode film layer ranges from 100 to 250 nm; the material used for the flat layer is polyimide, and the thickness range thereof is 1.5 to 3 um.
  • the material of the substrate film layer is polyimide, and the thickness thereof ranges from 10 to 20 um.
  • the organic thin film layer further includes: a second insulating layer and a second metal layer sequentially formed on the first metal layer; wherein: the second insulating layer has a thickness ranging from 50 to 200 nm, and the second metal layer is made of a metal Mo has a thickness ranging from 150 to 250 nm, and the second insulating layer and the second metal layer are patterned by photolithography and dry etching techniques.
  • the organic thin film layer further includes: an interlayer insulating layer and a source/drain metal layer sequentially formed on the second metal layer, wherein: the interlayer insulating layer has a thickness ranging from 500 to 700 nm, and the source and drain metal layers are connected Below the flat layer, the source and drain metal layers are made of titanium and/or aluminum and have a thickness in the range of 400 to 600 nm.
  • the functional layer structure further includes: a pixel defining layer, a light emitting layer and a cathode layer which are sequentially formed on the anode film layer.
  • the present invention also discloses a display device having the above display panel.
  • an inorganic insulating film layer is disposed between the lower layer of the positive-level film layer and the flat layer pattern, the inorganic insulating film layer is consistent with the pattern of the flat layer, and the inorganic insulating film layer maintains a certain pressure resistance, and the anode film layer can be eliminated. Piercing the organic film layer causes a defect in shorting the anode film layer to other functional layers.
  • the pattern on the inorganic insulating film layer is formed by a flat layer pattern mask and a dry etching technique, which can protect the flexible display panel from being punctured by the anode film layer during the packaging process, and the non-display area
  • the peripheral circuit is not damaged, ensuring the normal operation of the drive circuit and the normal display of the entire display panel.
  • the adhesion of the anode film layer to the underlying film layer and the yield of the display device can be improved.
  • FIG. 1 is a schematic structural view of a display panel according to an embodiment of the present invention.
  • FIG. 1 it is a first embodiment of the display panel structure of the present invention.
  • the display panel in this embodiment includes: a substrate 100; a substrate film layer 101 disposed on the substrate 100; a flat layer 110 disposed on the substrate film layer 101, a functional layer sequentially formed on the flat layer 110, and a functional layer structure
  • the method includes at least: a positive-level film layer 112, wherein an inorganic insulating film layer 111 is further disposed between the positive-level film layer 112 and the flat-layer layer 110, and the inorganic insulating film layer 111 conforms to the pattern of the flat layer 110.
  • the function of the inorganic insulating film layer 111 is to maintain a certain pressure resistance to eliminate the defect that the anode film layer 112 pierces the substrate film layer 101 to cause the anode film layer 112 to be short-circuited with other functional layers, and the anode film layer 112 and the lower function are improved.
  • the adhesion of the layer structure is to maintain a certain pressure resistance to eliminate the defect that the anode film layer 112 pierces the substrate film layer 101 to cause the anode film layer 112 to be short-circuited with other functional layers, and the anode film layer 112 and the lower function are improved.
  • the substrate 100 is a glass substrate, and the substrate film layer 101 is coated on the glass substrate. After the fabrication, the supporting glass substrate 100 is removed, and the substrate film layer 101 serves as a substrate of the display panel.
  • the substrate film layer 101 is made of a polyimide material and has a thickness ranging from 10 to 20 um.
  • the organic thin film layer includes: a buffer layer 102 sequentially formed on the substrate thin film layer 101, an active layer 103, a gate insulating layer 104, and a first metal layer 105; wherein: the buffer layer 102 has a thickness ranging from 200 to ⁇ 300 nm, the active layer 103 has a thickness ranging from 40 to 50 nm, the gate insulating layer 104 has a thickness ranging from 50 to 200 nm, and the first metal layer 105 is made of a metal Mo material having a thickness ranging from 150 to 250 nm.
  • the organic thin film layer further includes: a second insulating layer 106 and a second metal layer 107 sequentially formed on the first metal layer 105; wherein: the second insulating layer 106 has a thickness ranging from 50 to 200 nm, and the second metal The material of the layer 107 is a metal Mo having a thickness ranging from 150 to 250 nm, and the second insulating layer 106 and the second metal layer 107 are patterned by photolithography and dry etching techniques.
  • the organic thin film layer further includes: the functional layer structure further includes: an interlayer insulating layer 108 and a source/drain metal layer 109 sequentially formed on the second metal layer 107, wherein: the thickness of the interlayer insulating layer 108 ranges from 500 to 700 nm, the source/drain metal layer 109 is connected under the flat layer 110,
  • the source and drain metal layer 109 is made of titanium and/or aluminum and has a thickness ranging from 400 to 600 nm.
  • an inorganic insulating film layer 111 is further disposed between the anode film layer 112 and the flat layer 110 pattern.
  • the inorganic insulating film layer 111 is consistent with the pattern of the flat layer 110, and the inorganic insulating film layer 111 maintains a certain pressure resistance. Eliminating the defect that the anode film layer 112 pierces the organic film layer causes the anode film layer 112 to be short-circuited with other functional layers, and improves the structure of the anode film layer 112 and the lower functional layer, for example, the flat layer 110, the interlayer insulating layer 108, the source and drain electrodes. Adhesion of metal layer 109 or the like.
  • the material used for the anode film layer 112 is indium oxide and silver, and the thickness of the anode film layer 112 ranges from 100 to 250 nm.
  • the material used for the flat layer 110 is polyimide having a thickness ranging from 1.5 to 3 um.
  • the pattern on the inorganic insulating film layer 111 is formed by the flat layer 110 pattern mask and the dry etching technique to protect the flexible display panel from being punctured under the packaging process.
  • Functional layer structure is formed by the flat layer 110 pattern mask and the dry etching technique to protect the flexible display panel from being punctured under the packaging process.
  • the functional layer structure further includes: a pixel defining layer 113 and a PS layer 114 sequentially formed on the anode film layer 112; wherein: the pixel defining layer 113 is made of polyimide and has a thickness ranging from 1.5 to 3 um.
  • the material used for the PS layer 114 is polyimide having a thickness ranging from 1.5 to 3 um.
  • the inorganic insulating film layer 111 is added between the lower surface of the positive film layer 112 and the flat layer 110 pattern because the inorganic insulating film layer and the flat layer have the same pattern, and the inorganic insulating film layer 111 can be kept constant.
  • the pressure resistance can eliminate the defect that the anode film layer pierces the organic film layer and causes the anode film layer to be short-circuited with other functional layers; in addition, the inorganic insulating film layer 111 also has the effect of improving the adhesion of the anode film layer 112 and the lower functional layer structure. Unexpected technical effects.
  • the present invention also discloses a display device having the above display panel.
  • the specific implementation of the display device is the same as that of the above display panel, and details are not described herein.
  • an inorganic insulating film layer is disposed between the positive film layer and the flat layer pattern, the inorganic insulating film layer is consistent with the pattern of the flat layer, the inorganic insulating film layer maintains a certain pressure resistance, and the anodic film layer can be eliminated.
  • the organic film layer causes a defect in short-circuiting the anode film layer with other functional layers.
  • the pattern on the inorganic insulating film layer is through a flat layer pattern mask and dry etching technology.
  • the anode film layer will not puncture the underlying organic film layer during the packaging process, and the peripheral circuit of the non-display area is not damaged, ensuring the normal operation of the driving circuit and the normal display of the entire display panel.
  • the adhesion of the anode film layer to the underlying film layer and the yield of the display device can be improved.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种显示面板和显示装置，显示面板包括：基板薄膜层（101）；设置在基板薄膜层（101）上的有机薄膜层；设置在有机薄膜层上的平坦层（110），依次形成在平坦层（110）上的功能层，功能层至少包括阳极膜层（112），其中：阳极膜层（112）和平坦层（110）图形之间还设有无机绝缘膜层（111），无机绝缘膜层（111）与平坦层（110）的图形一致。避免阳极膜层（112）刺破下方有机薄膜层，提高阳极膜层（112）与下方膜层的附着力，保证显示区域外电路正常驱动，画面正常显示。

Description

一种显示面板和显示装置
本申请要求于2017年9月21日提交中国专利局、申请号为201710861551.0、发明名称为“一种显示面板和显示装置”的中国专利申请的优先权，上述专利的全部内容通过引用结合在本申请中。
技术领域
本发明涉及显示面板制造领域，尤其涉及一种显示面板和显示装置。
背景技术
柔性显示技术是下一代的主流显示技术。现有技术中柔性显示面板主要采用有源矩阵低温多晶硅薄膜晶体管进行驱动，在制作过程中，为保证显示面板阳极膜层的附着力，需要在显示区域外阳极膜层上制作等距离圆形或方形孔。
现有的柔性显示面板的封装结构存在的技术问题是：容易导致后续封装过程中阳极膜层刺破下方有机薄膜层，进而阳极膜层与源漏极层短接，造成驱动电路无法正常工作，整个显示面板画面显示异常。
发明内容
本发明所要解决的技术问题在于，提供一种显示面板和显示装置，避免阳极膜层刺破下方有机薄膜层，提高阳极膜层与下方膜层的附着力，保证显示区域外电路正常驱动，画面正常显示。
为了解决上述技术问题，本发明的实施例提供了一种显示面板，包括：基板薄膜层；设置在基板薄膜层上的有机薄膜层；设置在有机薄膜层上的平坦层；形成在平坦层上的功能层，功能层至少包括阳级膜层，其中：阳级膜层和平坦层图形之间还设有无机绝缘膜层，无机绝缘膜层与平坦层的图形一致。
其中，无机绝缘膜层和平坦层上的图形通过光罩和干法刻蚀技术而成。
其中，有机薄膜层包括：依次形成在基板薄膜层上的缓冲层、有源层、栅级绝缘层以及第一金属层；其中：缓冲层的厚度尺寸范围为200～300nm、 有源层的厚度尺寸范围为40～50nm、栅级绝缘层的厚度尺寸范围为50～200nm、第一金属层的材料为金属Mo，其厚度尺寸范围为150～250nm。
其中，有机薄膜层还包括：依次形成在第一金属层上的第二绝缘层和第二金属层；其中：第二绝缘层的厚度尺寸范围为50～200nm、第二金属层的材料为金属Mo，其厚度尺寸范围为150～250nm，第二绝缘层和第二金属层通过光刻和干法刻蚀技术进行图案化。
其中，有机薄膜层还包括：依次形成在第二金属层上的层间绝缘层、源漏极金属层，其中：层间绝缘层的厚度尺寸范围为500～700nm，源漏极金属层连接在平坦层的下方，源漏极金属层使用的材料为钛和/或铝，其的厚度尺寸范围为400～600nm。
其中，功能层结构还包括：依次形成在阳极膜层上的像素定义层、发光层和阴极层。
其中，无机绝缘膜层使用的材料为氧化硅，其厚度尺寸范围为50～200nm。
其中，阳极膜层使用的材料为氧化铟和银，阳极膜层的厚度尺寸范围为100～250nm；平坦层使用的材料为聚酰亚胺，其厚度尺寸范围为1.5～3um。
其中，基板薄膜层的材料为聚酰亚胺，其厚度尺寸范围为10～20um。
为解决上述技术问题，本发明还公开了一种显示面板，其中，包括：基板薄膜层；设置在基板薄膜层上的有机薄膜层；设置在有机薄膜层上的平坦层；形成在平坦层上的功能层，功能层至少包括阳级膜层，其中：阳级膜层和平坦层图形之间还设有无机绝缘膜层，无机绝缘膜层与平坦层的图形一致；有机薄膜层包括：依次形成在基板薄膜层上的缓冲层、有源层、栅级绝缘层以及第一金属层；其中：缓冲层的厚度尺寸范围为200～300nm、有源层的厚度尺寸范围为40～50nm、栅级绝缘层的厚度尺寸范围为50～200nm、第一金属层的材料为金属Mo，其厚度尺寸范围为150～250nm。
其中，无机绝缘膜层使用的材料为氧化硅，其厚度尺寸范围为50～200nm。
其中，阳极膜层使用的材料为氧化铟和银，阳极膜层的厚度尺寸范围为100～250nm；平坦层使用的材料为聚酰亚胺，其厚度尺寸范围为1.5～3um。
其中，基板薄膜层的材料为聚酰亚胺，其厚度尺寸范围为10～20um。
其中，有机薄膜层还包括：依次形成在第一金属层上的第二绝缘层和第二金属层；其中：第二绝缘层的厚度尺寸范围为50～200nm、第二金属层的材料为金属Mo，其厚度尺寸范围为150～250nm，第二绝缘层和第二金属层通过光刻和干法刻蚀技术进行图案化。
其中，有机薄膜层还包括：依次形成在第二金属层上的层间绝缘层、源漏极金属层，其中：层间绝缘层的厚度尺寸范围为500～700nm，源漏极金属层连接在平坦层的下方，源漏极金属层使用的材料为钛和/或铝，其的厚度尺寸范围为400～600nm。
其中，功能层结构还包括：依次形成在阳极膜层上的像素定义层、发光层和阴极层。
为解决上述技术问题，本发明还公开了一种具有上述显示面板的显示装置。
实施本发明所提供的显示面板、显示装置，具有如下有益效果：
第一、阳级膜层的下方和平坦层图形之间还设有无机绝缘膜层，无机绝缘膜层与平坦层的图形一致，无机绝缘膜层保持一定的耐压性，能够消除阳极膜层刺破有机薄膜层造成阳极膜层与其它功能层短接的不良。
第二、无机绝缘膜层上的图形通过平坦层图形光罩和干法刻蚀技术而成，能够实现保护柔性显示面板在封装过程中阳极膜层不会刺破下方有机薄膜层，非显示区外围电路不被损坏，保证驱动电路正常工作及整个显示面板画面正常显示。
第三，能够提高阳极膜层与下方膜层的附着力及显示装置产出良率。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明实施例显示面板的结构示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
如图1所示，为本发明显示面板结构的实施例一。
本实施例中的显示面板，包括：基板100；设置在基板100上的基板薄膜层101；设置在基板薄膜层101上的平坦层110，依次形成在平坦层110上的功能层，功能层结构至少包括：阳级膜层112，其中：阳级膜层112和平坦层110图形之间还设有无机绝缘膜层111，无机绝缘膜层111与平坦层110的图形一致。无机绝缘膜层111的作用是：保持一定的耐压性，以消除阳极膜层112刺破基板薄膜层101造成阳极膜层112与其它功能层短接的不良，提高阳极膜层112与下方功能层结构的附着力。
具体实施时，基板100为玻璃基板，基板薄膜层101涂覆在玻璃基板上，制成后，起支撑作用的玻璃基板100将被取走，基板薄膜层101作为显示面板的基板。本实施例中，基板薄膜层101由聚酰亚胺材料制成，其厚度尺寸范围为10～20um。
进一步的，有机薄膜层包括：依次形成在基板薄膜层101上的缓冲层102、有源层103、栅级绝缘层104以及第一金属层105；其中：缓冲层102的厚度尺寸范围为200～300nm、有源层103的厚度尺寸范围为40～50nm、栅级绝缘层104的厚度尺寸范围为50～200nm、第一金属层105由金属Mo材料制成，其厚度尺寸范围为150～250nm。
进一步的，有机薄膜层还包括：依次形成在第一金属层105上的第二绝缘层106和第二金属层107；其中：第二绝缘层106的厚度尺寸范围为50～200nm、第二金属层107的材料为金属Mo，其厚度尺寸范围为150～250nm，第二绝缘层106和第二金属层107通过光刻和干法刻蚀技术进行图案化。
进一步的，有机薄膜层还包括：功能层结构还包括：依次形成在第二金属层107上的层间绝缘层108、源漏极金属层109，其中：层间绝缘层108的厚度尺寸范围为500～700nm，源漏极金属层109连接在平坦层110的下方， 源漏极金属层109使用的材料为钛和/或铝，其的厚度尺寸范围为400～600nm。
进一步的，阳级膜层112和平坦层110图形之间还设有无机绝缘膜层111，无机绝缘膜层111与平坦层110的图形一致，无机绝缘膜层111保持一定的耐压性，以消除阳极膜层112刺破有机薄膜层造成阳极膜层112与其它功能层短接的不良，提高阳极膜层112与下方功能层结构，例如：平坦层110，层间绝缘层108、源漏极金属层109等的附着力。
其中：阳极膜层112使用的材料为氧化铟和银，阳极膜层112的厚度尺寸范围为100～250nm。平坦层110使用的材料为聚酰亚胺，其厚度尺寸范围为1.5～3um。
本实施例中，无机绝缘膜层111上的图形通过平坦层110图形光罩和干法刻蚀技术而成，用以保护柔性显示面板在封装过程中阳级膜层112不会刺破下方的功能层结构。
优选的，功能层结构还包括：依次形成在阳极膜层112上的像素定义层113和PS层114；其中：像素定义层113使用的材料为聚酰亚胺，其厚度尺寸范围为1.5～3um，PS层114使用的材料为聚酰亚胺，其厚度尺寸范围为1.5～3um。
本实施例中在阳级膜层112的下方和平坦层110图形之间增添无机绝缘膜层111的作用是：由于无机绝缘膜层与平坦层的图形一致，且无机绝缘膜层111能够保持一定的耐压性，可以消除阳极膜层刺破有机薄膜层造成阳极膜层与其它功能层短接的不良；此外，无机绝缘膜层111还具有提高阳极膜层112与下方功能层结构附着力意想不到的技术效果。
本发明还公开了一种具有上述显示面板的显示装置，显示装置的具体实施方式与上述显示面板的实施方式相同，不再赘述。
实施本发明所提供的显示面板和显示装置，具有如下有益效果：
第一、阳级膜层和平坦层图形之间还设有无机绝缘膜层，无机绝缘膜层与平坦层的图形一致，无机绝缘膜层保持一定的耐压性，能够消除阳极膜层刺破有机薄膜层造成阳极膜层与其它功能层短接的不良。
第二、无机绝缘膜层上的图形通过平坦层图形光罩和干法刻蚀技术而 成，能够实现保护柔性显示面板在封装过程中阳极膜层不会刺破下方有机薄膜层，非显示区外围电路不被损坏，保证驱动电路正常工作及整个显示面板画面正常显示。
第三，能够提高阳极膜层与下方膜层的附着力及显示装置产出良率。

Claims (17)

  1. 一种显示面板，其中，包括：
    基板薄膜层；
    设置在所述基板薄膜层上的有机薄膜层；
    设置在所述有机薄膜层上的平坦层；
    形成在所述平坦层上的功能层，所述功能层至少包括阳级膜层，其中：
    所述阳级膜层和所述平坦层图形之间还设有无机绝缘膜层，所述无机绝缘膜层与所述平坦层的图形一致。
  2. 如权利要求1所述的显示面板，其中，所述无机绝缘膜层和所述平坦层上的图形通过光罩和干法刻蚀技术而成。
  3. 如权利要求2所述的显示面板，其中，所述有机薄膜层包括：依次形成在所述基板薄膜层上的缓冲层、有源层、栅级绝缘层以及第一金属层；其中：
    所述缓冲层的厚度尺寸范围为200～300nm、所述有源层的厚度尺寸范围为40～50nm、所述栅级绝缘层的厚度尺寸范围为50～200nm、所述第一金属层的材料为金属Mo，其厚度尺寸范围为150～250nm。
  4. 如权利要求3所述的显示面板，其中，所述有机薄膜层还包括：依次形成在所述第一金属层上的第二绝缘层和第二金属层；其中：
    所述第二绝缘层的厚度尺寸范围为50～200nm、所述第二金属层的材料为金属Mo，其厚度尺寸范围为150～250nm，所述第二绝缘层和所述第二金属层通过光刻和干法刻蚀技术进行图案化。
  5. 如权利要求4所述的显示面板，其中，所述有机薄膜层还包括：
    依次形成在所述第二金属层上的层间绝缘层、源漏极金属层，其中：所述层间绝缘层的厚度尺寸范围为500～700nm，所述源漏极金属层连接在所述平坦层的下方，所述源漏极金属层使用的材料为钛和/或铝，其的厚度尺寸范围为400～600nm。
  6. 如权利要求5所述的显示面板，其中，所述功能层结构还包括：
    依次形成在所述阳极膜层上的像素定义层、发光层和阴极层。
  7. 如权利要求1所述的显示面板，其中，所述无机绝缘膜层使用的材料为氧化硅，其厚度尺寸范围为50～200nm。
  8. 如权利要求1所述的显示面板，其中，所述阳极膜层使用的材料为氧化铟和银，所述阳极膜层的厚度尺寸范围为100～250nm；
    所述平坦层使用的材料为聚酰亚胺，其厚度尺寸范围为1.5～3um。
  9. 如权利要求1所述的显示面板，其中，所述基板薄膜层的材料为聚酰亚胺，其厚度尺寸范围为10～20um。
  10. 一种显示面板，其中，包括：
    基板薄膜层；
    设置在所述基板薄膜层上的有机薄膜层；
    设置在所述有机薄膜层上的平坦层；
    形成在所述平坦层上的功能层，所述功能层至少包括阳级膜层，其中：
    所述阳级膜层和所述平坦层图形之间还设有无机绝缘膜层，所述无机绝缘膜层与所述平坦层的图形一致；
    所述有机薄膜层包括：依次形成在所述基板薄膜层上的缓冲层、有源层、栅级绝缘层以及第一金属层；其中：
    所述缓冲层的厚度尺寸范围为200～300nm、所述有源层的厚度尺寸范围为40～50nm、所述栅级绝缘层的厚度尺寸范围为50～200nm、所述第一金属层的材料为金属Mo，其厚度尺寸范围为150～250nm。
  11. 如权利要求10所述的显示面板，其中，所述无机绝缘膜层使用的材料为氧化硅，其厚度尺寸范围为50～200nm。
  12. 如权利要求11所述的显示面板，其中，所述阳极膜层使用的材料为氧化铟和银，所述阳极膜层的厚度尺寸范围为100～250nm；
    所述平坦层使用的材料为聚酰亚胺，其厚度尺寸范围为1.5～3um。
  13. 如权利要求12所述的显示面板，其中，所述基板薄膜层的材料为聚酰亚胺，其厚度尺寸范围为10～20um。
  14. 如权利要求13所述的显示面板，其中，所述有机薄膜层还包括：依次形成在所述第一金属层上的第二绝缘层和第二金属层；其中：
    所述第二绝缘层的厚度尺寸范围为50～200nm、所述第二金属层的材料 为金属Mo，其厚度尺寸范围为150～250nm，所述第二绝缘层和所述第二金属层通过光刻和干法刻蚀技术进行图案化。
  15. 如权利要求14所述的显示面板，其中，所述有机薄膜层还包括：
    依次形成在所述第二金属层上的层间绝缘层、源漏极金属层，其中：所述层间绝缘层的厚度尺寸范围为500～700nm，所述源漏极金属层连接在所述平坦层的下方，所述源漏极金属层使用的材料为钛和/或铝，其的厚度尺寸范围为400～600nm。
  16. 如权利要求15所述的显示面板，其中，所述功能层结构还包括：
    依次形成在所述阳极膜层上的像素定义层、发光层和阴极层。
  17. 一种显示装置，其中，所述显示装置包括如权利要求1所述的显示面板。
PCT/CN2017/109498 2017-09-21 2017-11-06 一种显示面板和显示装置 Ceased WO2019056512A1 (zh)

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