WO2019052003A1 - Procédé de fabrication d'un panneau d'affichage oled, et panneau d'affichage oled associé - Google Patents
Procédé de fabrication d'un panneau d'affichage oled, et panneau d'affichage oled associé Download PDFInfo
- Publication number
- WO2019052003A1 WO2019052003A1 PCT/CN2017/112447 CN2017112447W WO2019052003A1 WO 2019052003 A1 WO2019052003 A1 WO 2019052003A1 CN 2017112447 W CN2017112447 W CN 2017112447W WO 2019052003 A1 WO2019052003 A1 WO 2019052003A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- forming
- via hole
- insulating layer
- oled
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims description 22
- 238000007641 inkjet printing Methods 0.000 claims description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 3
- 238000009413 insulation Methods 0.000 claims 2
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 238000010586 diagram Methods 0.000 description 5
- 229920001621 AMOLED Polymers 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000010405 anode material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
- H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
Definitions
- the present invention provides a method for fabricating another OLED display panel, comprising: forming a TFT layer on a base substrate, the TFT layer including a source, a gate, and a drain; Forming a first insulating layer on a surface of the TFT layer; forming a first via hole on the first insulating layer, the first via hole exposing the drain; forming a metal cathode layer on the first insulating layer, Forming a second via hole on the metal cathode layer, the second via hole is above the first via hole, and a width of a lower surface of the second via hole is greater than a width of an upper surface of the first via hole; Forming a second insulating layer on the metal cathode layer, the second insulating layer is provided with a third via hole and a first trench, and the third via hole is located above the first via hole, the third via hole a lower surface width is smaller than a width of the second via lower surface
- the invention has the beneficial effects that the method for preparing the OLED display panel of the present invention is different from the prior art, in which a metal cathode layer is formed on the first insulating layer to ensure that the cathode layer is low in resistance and formed on the OLED layer.
- the anode layer of the independent anode electrode, each anode electrode corresponding to an independent sub-pixel unit, the OLED display panel prepared by the preparation method can significantly reduce the voltage drop and improve the display quality of the OLED display panel.
- Step S207 forming an anode layer having a separate anode electrode on the second insulating layer, the anode layer covering the OLED layer, and electrically connecting to the drain through the third via and the first via, each anode corresponding to an independent Sub-pixel unit.
- FIG. 9 is a schematic cross-sectional view showing an embodiment of an OLED display panel according to the present invention.
- the step of forming the anode layer 312 having the independent anode electrode on the second insulating layer 309 specifically includes: forming a third insulating layer 311 on the second insulating layer 309, and the third insulating layer 311 is disposed on the third insulating layer 311.
- a second trench 3111, the second trench 3111 is located above the third via 3091 and the first trench 3092, and the third via 3091 and the first trench 3092 are located in the second trench 3111;
- An anode layer 312 is prepared by ink jet printing in the groove 3111.
- the lower surface of the third via hole 3091 of the second insulating layer 309 is in contact with the upper surface of the first via 3071 region of the first insulating layer 307, and the second insulating layer 309 causes the metal cathode layer 308 and the anode layer. Spacers are formed between 312 to effectively avoid short circuits between the two.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
La présente invention concerne un procédé de fabrication d'un panneau d'affichage OLED, et un panneau d'affichage OLED. Le procédé consiste : à former une couche de TFT sur un substrat de base ; à former une première couche isolante sur une surface de la couche de TFT ; à former un premier trou d'interconnexion sur la première couche isolante, le premier trou d'interconnexion découvrant une électrode de drain ; à former une couche de cathode métallique sur la première couche isolante, et à former un deuxième trou d'interconnexion sur la couche de cathode métallique ; à former une seconde couche isolante sur la couche de cathode métallique, un troisième trou d'interconnexion et une première rainure étant prévus sur la seconde couche isolante ; à former une couche OLED dans la première rainure ; et à former, sur la seconde couche isolante, une couche d'anode comprenant une électrode d'anode indépendante, la couche d'anode recouvrant la couche OLED et formant une connexion électrique avec l'électrode de drain à travers le troisième trou d'interconnexion et le premier trou d'interconnexion, et chaque électrode d'anode correspondant à une unité de sous-pixel indépendante. La présente invention peut réduire de manière significative une chute de tension, et améliorer la qualité d'affichage d'un panneau d'affichage.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710825523.3 | 2017-09-12 | ||
| CN201710825523.3A CN107579105B (zh) | 2017-09-12 | 2017-09-12 | Oled显示面板的制备方法及oled显示面板 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2019052003A1 true WO2019052003A1 (fr) | 2019-03-21 |
Family
ID=61033062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/CN2017/112447 WO2019052003A1 (fr) | 2017-09-12 | 2017-11-23 | Procédé de fabrication d'un panneau d'affichage oled, et panneau d'affichage oled associé |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107579105B (fr) |
| WO (1) | WO2019052003A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110350103A (zh) * | 2019-06-28 | 2019-10-18 | 福建华佳彩有限公司 | 一种oled器件结构及其制备方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102616245B1 (ko) | 2018-10-05 | 2023-12-21 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080218066A1 (en) * | 2007-03-08 | 2008-09-11 | Samsung Electronics Co., Ltd. | Organic light emitting diode display device and method of manufacturing the same |
| CN101707028A (zh) * | 2009-11-13 | 2010-05-12 | 四川虹视显示技术有限公司 | 一种双面显示器 |
| CN102044554A (zh) * | 2009-10-16 | 2011-05-04 | 上海天马微电子有限公司 | 用于双面显示的有机发光二极管显示器 |
| CN105762298A (zh) * | 2014-12-17 | 2016-07-13 | 昆山工研院新型平板显示技术中心有限公司 | 有机发光二极管封装结构、有机发光显示屏及其制造方法 |
| CN106206672A (zh) * | 2016-09-09 | 2016-12-07 | 深圳市华星光电技术有限公司 | Amoled器件及其制作方法 |
-
2017
- 2017-09-12 CN CN201710825523.3A patent/CN107579105B/zh active Active
- 2017-11-23 WO PCT/CN2017/112447 patent/WO2019052003A1/fr active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080218066A1 (en) * | 2007-03-08 | 2008-09-11 | Samsung Electronics Co., Ltd. | Organic light emitting diode display device and method of manufacturing the same |
| CN102044554A (zh) * | 2009-10-16 | 2011-05-04 | 上海天马微电子有限公司 | 用于双面显示的有机发光二极管显示器 |
| CN101707028A (zh) * | 2009-11-13 | 2010-05-12 | 四川虹视显示技术有限公司 | 一种双面显示器 |
| CN105762298A (zh) * | 2014-12-17 | 2016-07-13 | 昆山工研院新型平板显示技术中心有限公司 | 有机发光二极管封装结构、有机发光显示屏及其制造方法 |
| CN106206672A (zh) * | 2016-09-09 | 2016-12-07 | 深圳市华星光电技术有限公司 | Amoled器件及其制作方法 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110350103A (zh) * | 2019-06-28 | 2019-10-18 | 福建华佳彩有限公司 | 一种oled器件结构及其制备方法 |
| CN110350103B (zh) * | 2019-06-28 | 2024-04-16 | 福建华佳彩有限公司 | 一种oled器件结构及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107579105B (zh) | 2019-11-26 |
| CN107579105A (zh) | 2018-01-12 |
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