WO2019045277A1 - Dispositif électroluminescent pour dispositif d'affichage de pixels à del - Google Patents

Dispositif électroluminescent pour dispositif d'affichage de pixels à del Download PDF

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Publication number
WO2019045277A1
WO2019045277A1 PCT/KR2018/008332 KR2018008332W WO2019045277A1 WO 2019045277 A1 WO2019045277 A1 WO 2019045277A1 KR 2018008332 W KR2018008332 W KR 2018008332W WO 2019045277 A1 WO2019045277 A1 WO 2019045277A1
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Prior art keywords
led chip
vertical led
vertical
electrode pad
electrode
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Application number
PCT/KR2018/008332
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English (en)
Korean (ko)
Inventor
오승현
유태경
조성식
김민표
신지유
김대원
Original Assignee
주식회사 루멘스
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Priority claimed from KR1020180005997A external-priority patent/KR102519737B1/ko
Priority claimed from KR1020180014089A external-priority patent/KR20190094665A/ko
Priority claimed from KR1020180034570A external-priority patent/KR20190112504A/ko
Priority claimed from KR1020180056691A external-priority patent/KR102519201B1/ko
Application filed by 주식회사 루멘스 filed Critical 주식회사 루멘스
Publication of WO2019045277A1 publication Critical patent/WO2019045277A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention relates to a light emitting element for a pixel which can be arranged at a small interval in a small area and which can be advantageously used as a pixel for display, and a light emitting element for a pixel, which is provided between the mount substrate and the light transmitting plate
  • a plurality of pixel units are arrayed in each pixel unit, and each of the pixel units includes first, second, third and fourth electrode pads individually driven by first, second, third and fourth electrode pads formed on a substrate, And third and fourth vertical LED chips.
  • each pixel consists of a red LED, a green LED, and a blue LED.
  • an LED display device has been proposed which constitutes each pixel with a red LED, a green LED, a blue LED and a white LED.
  • the package-on-module technology is a method of modularizing a blue LED package, a green LED package, and a red LED package and applying the module to an LED display device, which is difficult to use in a small-sized display device and difficult to increase the resolution of the display device.
  • the chip-on-module technology is a technology to construct a module by directly mounting a blue LED chip, a green LED chip, and a red LED chip on a substrate without putting it in a package. The technology can be implemented in a relatively small size compared to the package- And color reproducibility.
  • the LED chip structure used as a blue LED chip, a green LED chip, and a red LED chip has a lateral chip structure or a flip chip structure requiring electrodes at both the top and bottom, There is a limit. Particularly, in the case of using an LED chip including a lateral chip structure, there is a disadvantage that an additional bonding wire is required.
  • One problem to be solved by the present invention is to provide a light emitting device which can be advantageously used for a pixel of a display device by disposing a plurality of vertical LED chips at a small interval in a small area.
  • Another problem to be solved by the present invention is to provide a light emitting device having a plurality of LED chips arranged between a mounting substrate and a light transmitting plate so that LED chips constituting a pixel unit can be arranged at smaller intervals in a smaller area.
  • Pixel units are arrayed, and each of the pixel units includes first, second, third, and fourth pixel electrodes individually driven by first, second, third, and fourth electrode pads formed on a substrate and a light- And an LED display device including a fourth vertical LED chip.
  • a light emitting device for a pixel comprising: a mount substrate on which a first electrode pad, a second electrode pad, a third electrode pad and a fourth electrode pad are formed; A first vertical LED chip mounted on the mount substrate such that a lower portion thereof is connected to the first electrode pad; A second vertical LED chip mounted on the mount substrate such that a lower portion thereof is connected to the second electrode pad; A third vertical LED chip mounted on the mount substrate such that a lower portion thereof is connected to the third electrode pad; A conductive light transmitting plate electrically connected to the upper portion of the first vertical LED chip, the second vertical LED chip, and the third vertical LED chip; And a conductor connecting the conductive light transmitting plate and the fourth electrode pad, wherein the first electrode pad, the second electrode pad, and the third electrode pad, respectively, or through the fourth electrode pad, Individual driving power is applied to each of the first vertical LED chip, the second vertical LED chip and the third vertical LED chip.
  • the fourth electrode pad may be a common input terminal of the individual driving power source or a common output single terminal.
  • the conductor since the conductor is directly connected to the fourth electrode pad, when the fourth electrode pad is a common input terminal of the separate driving power source, the conductor also serves as a common input terminal of the individual driving power source, In the case of the common output terminal of the separate drive power source, the conductor also becomes the common output terminal of the individual drive power source.
  • the fourth electrode pad (or the conductor connected to the fourth electrode pad) becomes a common output terminal
  • the fourth electrode pad (or the conductor connected to the fourth electrode pad) becomes a common input terminal
  • a switching control unit is formed on the first, second, and third electrode pads, and when the first, second, and third electrode pads are output, the switching control unit performs control on the output side, When the three-electrode pad is a single input, the switching control unit controls the input side so that the RGB chips, that is, the first vertical LED chip, the second vertical LED chip and the third vertical LED chip can be individually controlled.
  • the combination of the first vertical LED chip, the second vertical LED chip, and the third vertical LED chip includes both the first vertical LED chip, the second vertical LED chip, and the third vertical LED chip A combination of the first vertical LED chip, the second vertical LED chip and the third vertical LED chip, and a combination of the first vertical LED chip, the second vertical LED chip, and the third vertical LED chip, And a combination of one of the third vertical LED chips and the vertical LED chip.
  • the first vertical LED chip, the second vertical LED chip, and the third vertical LED chip may be a blue LED chip, a green LED chip, and a red LED chip, respectively.
  • the conductive light transmitting plate may include ITO (Indium Tin Oxide).
  • the conductive light transmitting plate may include a light transmitting plate base material and an ITO (Indium Tin Oxide) pattern formed on the base material of the light transmitting plate.
  • ITO Indium Tin Oxide
  • the light emitting device may further include an electrically insulating underfill filled between the mount substrate and the conductive light transmitting plate.
  • the upper and lower portions of the first vertical LED chip, the second vertical LED chip and the third vertical LED chip have opposite polarities.
  • each of the first vertical LED chip, the second vertical LED chip and the third vertical LED chip includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer between the bottom and the top.
  • At least one of the first vertical LED chip, the second vertical LED chip and the third vertical LED chip includes a surface on which the semiconductor layer growth substrate is removed.
  • the light emitting device is disposed at a lower portion of the conductive light transmitting plate, and between the upper portion of the first vertical LED chip and the conductor, between the upper portion of the second vertical LED chip and the conductor, And a resistor disposed between the upper portion of the third vertical LED chip and the conductor.
  • the distance between the first vertical LED chip and the second vertical LED chip is preferably equal to the distance between the second vertical LED chip and the third vertical LED chip.
  • a method of manufacturing a light emitting device for a pixel includes a plurality of pad groups, each pad group including a first electrode pad, a second electrode pad, a third electrode pad, ; Mounting a plurality of first vertical LED chips on the mount substrate such that a lower portion of the first vertical LED chip is connected to the first electrode pad; Mounting a plurality of second vertical LED chips on the mount substrate such that a lower portion of the second vertical LED chip is connected to the second electrode pad; Mounting a plurality of third vertical LED chips on the mount substrate so that the lower portion is connected to the third electrode pad; Installing each of the plurality of conductors on the mount substrate to be connected to the fourth electrode pad; Attaching a conductive light transmitting plate to an upper portion of the first vertical LED chip, the second vertical LED chip, and the third vertical LED chip and the upper surface of the conductor to manufacture a panel; And cutting the panel into pad groups.
  • the step of mounting the first vertical LED chip comprises the steps of preparing a first wafer including a sapphire substrate and a plurality of first vertical LED chips formed on a sapphire substrate surface, Bonding the lower portion of each of the vertical LED chips to the plurality of first electrode pads, and removing the sapphire substrate from the plurality of first vertical LED chips.
  • the step of mounting the second vertical LED chip may include preparing a second wafer including a sapphire substrate and a plurality of second vertical LED chips formed on the sapphire substrate surface, Bonding the second electrode pad to the plurality of second electrode pads, and removing the sapphire substrate from the plurality of second vertical LED chips.
  • an LED display device including a plurality of pad groups arranged in a matrix array, and each of the pad groups including a first electrode pad, a second electrode pad, a third electrode pad and a fourth electrode pad Mount substrate; A light transmitting plate spaced apart from the upper surface of the mount substrate and having a plurality of electrode patterns arranged in a matrix; And a plurality of pixel units arranged between the mount substrate and the light transmission plate and arrayed in a matrix array, wherein each of the plurality of pixel units is mounted on the mount substrate so that a lower portion thereof is connected to the first electrode pad, A second vertical LED chip mounted on the mount substrate such that a lower portion thereof is connected to the second electrode pad, a third vertical LED chip mounted on the mount substrate such that a lower portion thereof is connected to the third electrode pad, And a conductor provided on the mount substrate so that a lower portion thereof is connected to the fourth electrode pad, wherein the upper portion of the first vertical LED chip, the second vertical LED chip and the third
  • the plurality of electrode patterns have light transmittance.
  • the plurality of electrode patterns are formed of ITO (Indium Tin Oxide) formed on one surface of the light-transmitting plate base material.
  • ITO Indium Tin Oxide
  • the mount substrate is preferably a TFT substrate.
  • the first vertical LED chip, the second vertical LED chip, and the third vertical LED chip may be a blue LED chip, a green LED chip, and a red LED chip, respectively.
  • the LED display device further includes an electrically insulating underfill which is filled between the mount substrate and the light transmitting plate.
  • the upper and lower portions of the first vertical LED chip, the second vertical LED chip and the third vertical LED chip have opposite polarities.
  • each of the first vertical LED chip, the second vertical LED chip and the third vertical LED chip includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer between the bottom and the top.
  • At least one of the first vertical LED chip, the second vertical LED chip and the third vertical LED chip includes a surface on which the semiconductor layer growth substrate is removed.
  • the LED display device is disposed at a lower portion of the light transmitting plate, and is disposed between the upper portion of the first vertical LED chip and the conductor, between the upper portion of the second vertical LED chip and the conductor, 3 vertical diode chip and the conductor.
  • an interval between the first vertical LED chip and the second vertical LED chip is preferably equal to an interval between the second vertical LED chip and the third vertical LED chip Do.
  • a plurality of vertical LED chips are arranged at small intervals in a small area to realize a light emitting device which can be advantageously used for pixels of a display device.
  • a conductive light transmitting plate such as an ITO glass can be used as a common electrode pad by connecting to a specific electrode pad on a mount substrate by using a conductor. This enables miniaturization of the light emitting element. Further, it is possible to omit a part of the circuit line of the mount substrate.
  • the electrically insulating underfill formed through the underfill process between the mount substrate light transmitting plates improves chip bonding defects due to the difference in thermal expansion coefficient.
  • the light emitting device according to the present invention has an advantage that it can be manufactured in a much smaller size and in a reduced process time due to shortening of the wire bonding time compared to the existing product.
  • a plurality of pixel units are arrayed between a mount substrate and a light transmitting plate, and each pixel unit includes a light transmitting electrode pattern formed on a light transmitting plate, first, second, third and fourth electrodes
  • the LED display device includes first, second, third, and fourth vertical LED chips individually driven by pads.
  • the LED display device includes a plurality of pixel units, As shown in FIG. Therefore, miniaturization of the LED display device is possible. It is also possible to omit a part of the circuit line of the mount substrate. Also, the electrically insulating underfill formed between the mount substrate light transmitting plates through the underfill process improves chip bonding defects due to the difference in thermal expansion coefficient.
  • the light emitting device according to the present invention has an advantage that it can be manufactured in a much smaller size and in a reduced process time due to shortening of the wire bonding time compared to the existing product.
  • a common electrode can be electrically connected to a vertical LED chip without a bonding wire.
  • a plurality of vertical LED chips having different wavelengths, a common electrode and a supporting layer are formed first, a mask having a pattern hole formed thereon is formed, and a metal is deposited through a pattern hole to form a pattern wiring layer Mass production is possible.
  • a pattern wiring layer precisely and finely, and it is possible to further reduce the size of the vertical LED chips.
  • the first vertical type LED chip, the second vertical type LED chip and the third vertical type LED chip can be individually driven by the lower individual electrodes and the common electrode portion connected to the upper individual electrodes And the common electrode portion may be connected to the wiring pattern layer or may be the wiring pattern layer itself.
  • the common electrode portion is the wiring pattern layer itself, it provides an advantage that the planar occupation area of the pixel unit can be further reduced.
  • the common electrode portion for connecting the upper or upper electrodes of the first, second, and third vertical LED chips is not a light transmitting plate having ITO or a conductive pattern, the first, second, The first, second, and third vertical LED chips can be prevented from tilting and tilting when the upper portion of the third vertical LED chip is connected to the common electrode portion.
  • a wiring pattern layer is formed on the upper surfaces of first, second, and third vertical LED chips by deposition using a through silicon nitride (TSV) or through glass (TGV) So that the wiring pattern layer can precisely connect the upper electrodes of the vertical LEDs in the unit of micrometers.
  • TSV through silicon nitride
  • TSV through glass
  • the LED pixel unit manufactured according to the present disclosure Individual current drive control is possible.
  • the vertical LED chips of micrometer unit are bonded to the support substrate having the connection parts formed by the bump balls, and the connection parts and the wiring parts of the mount substrate are respectively connected by the solder, This problem can be compensated.
  • the upper surface of the vertical LED chips may have a weak vapor-deposition point for wiring connection of several micrometers, so that the vapor-deposited portion may be damaged or separated during transportation.
  • a support layer supporting all of the vertical- The undesired movement between the vertical LED chips can be prevented and damage to the wiring pattern layer can be prevented.
  • FIG. 1A is a perspective view showing a light emitting element for a pixel according to Embodiment A-1,
  • FIG. 1B is a plan view showing a light emitting element for a pixel according to Embodiment A-1,
  • FIG. 2 is an exploded perspective view showing a light-emitting element for a pixel according to Embodiment A-1,
  • FIG. 3 is a cross-sectional view taken along line I-I of FIG. 1B,
  • FIGS. 4 to 11 are views for explaining a method of manufacturing a light emitting device for a pixel according to Example A-1,
  • FIG. 12 is a light-emitting element for a pixel according to Embodiment A-2, which is disposed at the lower portion of the conductive light transmitting plate, and between the upper portion of the first vertical LED chip and the conductor, between the upper portion of the second vertical LED chip and the conductor, 3 vertical diode chip and a conductor, and FIG. 5B is a view for explaining a light emitting device having a structure further including resistive elements,
  • FIG. 13 is a plan view showing an LED display device according to Embodiment A-3,
  • FIG. 14 is a partially enlarged perspective view partially showing an LED display device according to Embodiment A-3,
  • Fig. 15 is an exploded perspective view of the LED display device shown in Fig. 14,
  • Fig. 16 is a sectional view taken along the line A-A in Fig. 13,
  • Fig. 17 is an LED display device according to Embodiment A-4, which is disposed at the lower portion of the light transmitting plate, and between the upper portion of the first vertical LED chip and the conductor, between the upper portion of the second vertical LED chip and the conductor,
  • FIG. 7 is a view for explaining an LED display device having a structure further including resistance elements disposed between the upper portion of the LED chip and the conductor,
  • FIG. 18 is a plan view showing a micro-LED module including a plurality of pixel units arranged in a matrix according to Embodiment B-1,
  • FIG. 19 is an enlarged plan view of the pixel unit shown in Fig. 18,
  • FIG. 20 is a view showing a cross section a-a, a cross-section b-b, and a cross-section cc of FIG. 19,
  • Figs. 21 and 22 are views for explaining the micro-LED modules according to Embodiments B-2 and B-3,
  • FIGS. 23 to 29 are views for explaining a method of manufacturing a micro-LED module according to Example B-4,
  • FIG. 30 is a plan view showing a micro-LED module according to Example C-1,
  • FIG. 31 is a cross-sectional view of the cross section taken along the line A-A, B-B and C-C of Fig. 30,
  • 35 is a plan view showing a micro-LED module according to an embodiment C-3,
  • FIG. 37 is a cross-sectional view for explaining an LED display panel according to Embodiment D, in which the vertical LED chips and the common electrode are arranged in a line in order for convenience of illustration.
  • 39 is a plan view for explaining an LED pixel unit according to embodiment D-1,
  • 41 is a plan view for explaining an LED filler unit according to an embodiment D-3.
  • a light emitting device 1 for a pixel according to Embodiment A-1 includes a mount substrate 100, a first vertical LED chip 200, An LED chip 300, a third vertical LED chip 400, and a conductive light transmitting plate 500.
  • the mount substrate 100 is formed in a substantially rectangular shape and includes a first electrode pad 110, a second electrode pad 120, a third electrode pad 130, and a fourth electrode pad 140 are formed.
  • the mount substrate 100 may be a printed circuit board (PCB).
  • the conductive light transmitting plate 500 is disposed on the mount substrate 100 at a predetermined distance from the mount substrate 100.
  • the conductive light transmitting plate 500 may be formed by coating a light transmitting plate such as glass with a conductive material such as ITO (Indium Tin Oxide).
  • ITO Indium Tin Oxide
  • the ITO may be formed on the whole area of one side of the light transmitting plate and may be formed in a predetermined pattern.
  • the first vertical LED chip 300, the third vertical LED chip 300 and the third vertical LED chip 400 are sandwiched between the mount substrate 100 and the conductive light transmitting plate 500 .
  • the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400 may have a structure for exposing all semiconductor layers of opposite polarity on the upper or lower surface, Unlike a lateral type or flip chip type LED chip, which requires a stepped structure to limit the area of the upper surface or the lower surface, only one electrode is required for each of the upper surface and the lower surface, , Can be integrated in an area corresponding to the existing chip scale
  • the first vertical LED chip 200 is a gallium nitride semiconductor chip emitting blue light and includes an upper electrode 250 and a lower electrode 210.
  • the first vertical LED chip 200 includes a p-type semiconductor layer 220 formed between the upper electrode 250 and the lower electrode 210 in order from the lower electrode 210 toward the upper electrode 250 ), An active layer 230, and an n-type semiconductor layer 240.
  • the second vertical LED chip 300 is a gallium nitride semiconductor chip emitting green light and includes an upper electrode 350 and a lower electrode 310.
  • the second vertical LED chip 300 includes a p-type semiconductor layer 320 formed in order from the lower electrode 310 toward the upper electrode 350 between the upper electrode 350 and the lower electrode 310, ), An active layer 330, and an n-type semiconductor layer 340.
  • the third vertical LED chip 400 is a gallium arsenide type semiconductor chip emitting red light and includes an upper electrode 450 and a lower electrode 410.
  • the third vertical LED chip 400 includes a p-type semiconductor layer 420 formed in order from the lower electrode 410 toward the upper electrode 450 between the upper electrode 450 and the lower electrode 410 ), An active layer 430, and an n-type semiconductor layer 440.
  • the upper electrodes 250, 350 and 450 may be transparent electrodes such as ITO, and the upper and lower electrodes 210, 310 and 410 may be metal electrodes.
  • the upper electrodes 250, 350 and 450 and / or the upper and lower electrodes 210, 310 and 410 may be omitted.
  • the semiconductor layer or the ohmic contact layer may be formed on the upper surface of the LED chip And / or lower.
  • the lower electrodes 210, 310, and 410 of the first vertical LED chip 200, the second vertical LED chip 300, and the third vertical LED chip 400 are connected to the p-type semiconductor layer And the upper electrodes 250 and 350 of the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400 are connected to the first vertical LED chip 220, the second vertical LED chip 320, And 450 are connected to the n-type semiconductor layers 240, 340, and 440 to have n-type polarity.
  • the first vertical LED chip 200 is mounted on the mount substrate 100 so that the lower electrode 210 is connected to the first electrode pad 110.
  • the second vertical LED chip 300 is mounted on the mount substrate 100 so that the lower electrode 310 is connected to the second electrode pad 120.
  • the third vertical LED chip 400 is mounted on the mount substrate 100 such that the lower electrode 410 is connected to the third electrode pad 130.
  • the first vertical LED chip 200, the second vertical LED chip 200 and the first electrode pad 110, the first electrode pad 120 and the third electrode pad 130 of the third vertical LED chip 400 A conductive adhesive material (b) is used for adhering to the substrate.
  • the light emitting device 1 for a pixel includes a rigid conductor 600 formed on the mount substrate 100 so that its lower end is connected to the fourth electrode pad 140.
  • the conductive adhesive material (b) is also used for adhesion between the rigid conductor 600 and the fourth electrode pad 140.
  • the conductive light transmitting plate 500 is electrically connected to the upper electrode 250 of the first vertical LED chip 200, the upper electrode 350 of the second vertical LED chip 30,
  • the second vertical LED chip 300 and the third vertical LED chip 400 are connected to the upper electrode 450 of the first vertical LED chip 400 and the upper end of the conductor 600, And the upper end of the conductor 600.
  • the conductive adhesive material (b) is also used for the attachment of the conductive light transmitting plate (500).
  • the conductive light transmitting plate 500 is connected to the upper electrodes 250, 350 and 450 of the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400,
  • the first electrode pad 110, the second electrode pad 120, and the third electrode pad 130 are connected to the first electrode pad 140 and the second electrode pad 120, respectively, since the conductive light transmitting plate 500 is connected to the fourth electrode pad 140.
  • the fourth electrode pad 140 serves as a common electrode pad, .
  • the fourth electrode pad 140 may be a common input terminal of the individual driving power source or may be a single common output terminal.
  • the conductor 600 since the conductor 600 is directly connected to the fourth electrode pad 140, when the fourth electrode pad 140 is a common input terminal of the separate driving power source, When the fourth electrode pad 140 is a common output terminal of the separate driving power, the conductor 600 becomes a common output terminal of the separate driving power.
  • the fourth electrode pad 140 or the fourth electrode pad When the first electrode pad 110, the second electrode pad 120, and the third electrode pad 130 are separate input terminals, the fourth electrode pad 140 or the fourth electrode pad When the first electrode pad 110, the second electrode pad 120, and the third electrode pad 130 are separate output terminals, the conductor 600 connected to the fourth electrode 140 is a common output terminal, The pad 140 or the conductor 600 connected to the fourth electrode pad 140 serves as a common input terminal.
  • the first, second and third electrode pads 110, 120 and 130 are connected to the first, second and third electrode pads 110, 120 and 130, respectively.
  • the switching control unit performs control on the output side, and when the first, second, and third electrode pads 110, 120, and 130 are input, the switching control unit controls the input side to output the RGB chips,
  • the vertical LED chip 200, the second vertical LED chip 300, and the third vertical LED chip 400 may be individually controlled.
  • the first vertical LED chip 200, the second vertical LED chip 300, and the third vertical LED chip 400 can be individually controlled.
  • the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400 are individually controlled so that the first vertical LED chip 200, the second vertical LED chip 300, And the third vertical LED chip 400 can be changed into various colors, thereby realizing a full color display.
  • the gap between the first vertical LED chip 300 and the second vertical LED chip 300 and the gap between the first vertical LED chip 300 and the second vertical LED chip 300 may be adjusted to increase color uniformity emitted from the light emitting device 1.
  • the third vertical LED chip 400 are equal to each other.
  • the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400 may be connected between the mount substrate 100 and the conductive light transmitting plate 500 And an electrically insulating underfill 900 for protecting the electrodes.
  • the mounting substrate 100 may be formed of black, white, or transparent material so as to increase the color conversion efficiency, and a molding material may be formed on the side surfaces of the vertical LED chips 200, 300, and 400.
  • the molding material may be black or white.
  • Typical mount substrates are made of ceramics or FR 4 / CEM, which can be black or white, and they form an electrode through the formation of vias.
  • transparent glass or plastic resin series it may be a transparent or black compound mixed series, which forms an electrode through the formation of a via or an electrode through a side metal deposition method .
  • a method of manufacturing a light-emitting element for a pixel according to Embodiment A-1 will be described with reference to Figs. 4 to 11.
  • Fig. It should be noted that the orientations in Figs. 4 to 11 coincide with the orientations in Figs. 1A, 1B2 and 3, and are independent of the actual orientation and orientation of the manufacturing process.
  • each pad group G includes a first electrode pad 110, a second electrode pad 120, A mount substrate 100 including a pad 130 and a fourth electrode pad 140 is prepared.
  • the mount substrate 100 may be a PCB (Printed Circuit Board), for example.
  • the mount substrate 100 may be provided with various elements such as switches and the like.
  • the first vertical LED chip and the second vertical LED chip include a gallium nitride-based semiconductor layer grown on a sapphire substrate, and as described below, it is required to remove the sapphire substrate during the mounting process .
  • the third vertical LED chip includes a gallium arsenide-based semiconductor layer on an arbitrary growth substrate and may be removed during the mounting process, but it is not essential when the conductive growth substrate is used.
  • a sapphire substrate 201 and a plurality of first vertical LED chips 200 formed on the sapphire substrate 201 are included in the initial stage of the mounting of the first vertical LED chip
  • the first wafer W1 is prepared.
  • a lower electrode 210 is formed on each of the plurality of first vertical LED chips 200.
  • the second vertical LED chip 200 includes an n-type semiconductor layer of a gallium nitride type grown on a sapphire substrate, an active layer and a p-type semiconductor layer.
  • the sapphire substrate 301 and the plurality of second vertical LED chips 300 formed on the sapphire substrate 301 are formed as the initial stages of the mounting of the second vertical LED chip,
  • the second wafer W2 is prepared.
  • a lower electrode 310 is formed on each of the plurality of second vertical LED chips 300.
  • the second vertical LED chip 300 includes an n-type semiconductor layer of a gallium nitride series grown on a sapphire substrate, an active layer and a p-type semiconductor layer.
  • the step of mounting the first wafer W1 on the mount substrate 100 is preferably a transfer printing process.
  • the step of mounting the second wafer W2 on the mount substrate 100 is preferably a transfer printing process.
  • a plurality of first vertical LED chips 200 are mounted on the mount substrate 100 so that the lower electrode 210 is connected to the first electrode pad 110 and the lower electrode 310 is mounted on the second electrode pad 110.
  • a plurality of second vertical LED chips 300 are mounted on the mount substrate 100 so that the lower electrode 410 is connected to the third electrode pad 130
  • a plurality of third vertical LED chips 400 are mounted on the mount substrate 100 so as to be connected to the plurality of third vertical LED chips 400.
  • the mounting of the third vertical LED chip 400 may be performed by mounting the wafer in a state similar to the mounting method of the first and second vertical LED chips and then separating the substrate. Alternatively, As shown in FIG.
  • the conductor 600 is made of a metal having good conductivity such as Cu, Au, Ag or the like or an alloy containing the same.
  • the conductor 600 may be manufactured in advance and bonded to the mount substrate 100 or directly to the mount substrate 100 .
  • the conductive light transmitting plate 500 is connected to the upper electrode (not shown) of the first vertical LED chip 200, the second vertical LED chip 300, and the third vertical LED chip 400 250, 350, 450) and the upper surface of the conductor 600 to form the panel P.
  • the upper electrodes 250, 350 and 450 are transparent electrodes or omitted.
  • the conductive light transmitting plate 5000 may be formed by coating a transparent conductive material such as ITO on a lower surface of a light transmitting plate such as glass.
  • the conductive light transmitting plate 500 may be made of a single plate material having optical transparency and conductivity.
  • An insulating tablet 900 may be filled between the conductive light transmitting plate 500 and the mount substrate 100 when the panel P is manufactured.
  • a first vertical LED chip, a second vertical LED chip, a third vertical LED chip and a panel sandwiched between the large-area conductive light transmitting plate and the large- (P) is formed.
  • a step of cutting the panel P into units of the above-described pad group G is performed, whereby a plurality of light-emitting elements 1 for pixels as shown in Figs. 1 to 3 are made .
  • a resistive element may be further disposed under the conductive light transmitting plate 500 to realize a white color
  • FIG. FIG. 12 is a view for explaining a light emitting element for a pixel according to Embodiment A-2.
  • resistive elements 710, 720 and 730 are disposed on a conductive light transmitting plate 500 Between the upper portion of the first vertical LED chip 200 and the conductor 600, between the upper portion of the second vertical LED chip 300 and the conductor 600, and between the third vertical And is disposed between the upper portion of the LED chip 400 and the conductor 600.
  • 12 (b) is an equivalent circuit diagram of the structure shown in (a).
  • an integrated circuit (IC) may be further disposed under the conductive light transmitting plate 500 to realize full color.
  • the LED display device 1000 includes a mount substrate 100 having a rectangular shape and a mount substrate 100 having substantially the same shape and area as the mount substrate 100, A plurality of pixel units 2 arranged between the mount substrate 100 and the light transmitting plate 500 and arrayed in a matrix array, do.
  • Each of the plurality of pixel units 2 includes a first vertical LED chip 200, a second vertical LED chip 300, a third vertical LED chip 400, and a conductor 600.
  • the mount substrate 100 includes a plurality of pad groups G arranged on the upper surface in a matrix array corresponding to the plurality of pixel units 2 and each of the plurality of pad groups G has a substantially rectangular array A first electrode pad 110, a second electrode pad 120, a third electrode pad 130 and a fourth electrode pad 140 formed on the upper surface of the mount substrate 100.
  • the mount substrate 100 may be a thin film transistor (TFT) substrate or a printed circuit board (PCB), but may preferably be a TFT substrate.
  • the light transmitting plate 500 is disposed on the mount substrate 100 at a predetermined distance from the mount substrate 100.
  • the light transmitting plate 500 includes a plurality of light transmitting electrode patterns 510 formed by coating a conductive material such as ITO (Indium Tin Oxide) on an insulating light transmitting plate base material such as glass.
  • the plurality of light transmitting electrode patterns 510 are arrayed corresponding to the arrangement of the plurality of pixel units 2 or corresponding to the arrangement of the plurality of pad groups G.
  • the first vertical LED chip 300, the third vertical LED chip 300 and the third vertical LED chip 400 are sandwiched between the mount substrate 100 and the light transmitting plate 500, do.
  • the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400 may have a structure for exposing all semiconductor layers of opposite polarity on the upper or lower surface, Unlike a lateral type or flip chip type LED chip, which requires a stepped structure to limit the area of the upper surface or the lower surface, only one electrode is required for each of the upper surface and the lower surface, , And can be integrated in an area corresponding to the existing chip scale.
  • the first vertical LED chip 200 is a gallium nitride semiconductor chip emitting blue light and includes an upper electrode 250 and a lower electrode 210.
  • the first vertical LED chip 200 includes a p-type semiconductor layer 220 formed between the upper electrode 250 and the lower electrode 210 in order from the lower electrode 210 toward the upper electrode 250 ), An active layer 230, and an n-type semiconductor layer 240.
  • the second vertical LED chip 300 is a gallium nitride semiconductor chip emitting green light and includes an upper electrode 350 and a lower electrode 310.
  • the second vertical LED chip 300 includes a p-type semiconductor layer 320 formed in order from the lower electrode 310 toward the upper electrode 350 between the upper electrode 350 and the lower electrode 310, ), An active layer 330, and an n-type semiconductor layer 340.
  • the third vertical LED chip 400 is a gallium arsenide type semiconductor chip emitting red light and includes an upper electrode 450 and a lower electrode 410.
  • the third vertical LED chip 400 includes a p-type semiconductor layer 420 formed in order from the lower electrode 410 toward the upper electrode 450 between the upper electrode 450 and the lower electrode 410 ), An active layer 430, and an n-type semiconductor layer 440.
  • the upper electrodes 250, 350 and 450 may be transparent electrodes such as ITO, and the lower electrodes 210, 310 and 410 may be metal electrodes.
  • the upper electrodes 250, 350 and 450 and / or the upper and lower electrodes 210, 310 and 410 may be omitted.
  • the semiconductor layer or the ohmic contact layer may be formed on the upper surface of the LED chip And / or lower.
  • the lower electrodes 210, 310, and 410 of the first vertical LED chip 200, the second vertical LED chip 300, and the third vertical LED chip 400 are connected to the p-type semiconductor layer And the upper electrodes 250 and 350 of the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400 are connected to the first vertical LED chip 220, the second vertical LED chip 320, And 450 are connected to the n-type semiconductor layers 240, 340, and 440 to have n-type polarity.
  • the first vertical LED chip 200 is mounted on the mount substrate 100 so that the lower electrode 210 is connected to the first electrode pad 110.
  • the second vertical LED chip 300 is mounted on the mount substrate 100 so that the lower electrode 310 is connected to the second electrode pad 120.
  • the third vertical LED chip 400 is mounted on the mount substrate 100 such that the lower electrode 410 is connected to the third electrode pad 130.
  • the first electrode pad 110, the first electrode pad 120 and the third electrode pad 130 of the first vertical LED chip 200, the second vertical LED chip 200 and the third vertical LED chip 400, A conductive adhesive material (b) is used to adhere to each.
  • the above-described conductor 600 is formed as a conductor having sufficient rigidity on the mount substrate 100 so as to be connected to the fourth electrode pad 140 of each pad group.
  • the conductive adhesive material (b) is also used for adhesion between the rigid conductor (600) and the fourth electrode pad (140).
  • the light transmitting plate 500 includes a plurality of light transmitting electrode patterns 510 (only two are shown) arranged in a matrix.
  • the upper electrode 450 of the first vertical LED chip 200 and the upper end of the conductor 600 are connected to the corresponding light transmitting electrode pattern 510.
  • the light transmitting plate 500 is connected to the first vertical LED chip 200,
  • the LED chip 300 is mounted on the upper portion of the third vertical LED chip 400 and the upper end of the conductor 600.
  • the conductive adhesive material (b) is also used to attach the light transmitting plate (500).
  • the specific light transmitting electrode pattern 510 formed on the light transmitting plate 500 is electrically connected to the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED 300 of the specific pixel unit 2,
  • the first electrode pad 110 and the second electrode pad 120 of the pixel unit 2 are connected to the upper ends of the upper electrodes 250, 350 and 450 of the chip 400 and the upper end of the conductor 600,
  • the three electrode pads 130 serve as individual electrode pads for driving the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400
  • the four-electrode pad 140 functions as a common electrode pad. Therefore, the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400 of each pixel unit 2 can be individually controlled.
  • the light emitted from the pixel unit 2 can be changed into various colors by individually controlling the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400, Accordingly, it is possible to realize a full color display.
  • the distance between the first vertical LED chip 200 and the second vertical LED chip 300 and the spacing between the first vertical LED chip 200 and the second vertical LED chip 300 may be adjusted so as to increase the color uniformity of the light emitted from the pixel unit 2,
  • the distance between the LED chip 300 and the third vertical LED chip 400 is preferably the same.
  • the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400 are protected from the external environment between the mount substrate 100 and the light transmitting plate 500.
  • An electrically insulating underfill 900 may be filled.
  • the mount substrate 100 may be formed of black, white, or a transparent material so as to increase color conversion efficiency, and a molding material may be formed on the side surfaces of the vertical LED chips 200, 300, and 400.
  • the material of the molten material may be black or white.
  • Typical mount substrates are made of ceramics or FR 4 / CEM, which can be black or white and they form an electrode through the formation of vias.
  • transparent glass or plastic resin series it may be a transparent or black compound mixed series, which forms an electrode through the formation of a via or an electrode through a side metal deposition method .
  • the manufacturing method of the LED display device according to this embodiment is substantially the same as that described with reference to Figs. 4 to 10 of the method of manufacturing the pixel element described in the foregoing embodiment.
  • the pixel is divided into a plurality of pixels without being divided into a plurality of pixels. Therefore, the description will be omitted in order to avoid redundancy.
  • FIG. 17 is a view showing an LED display device according to Embodiment A-4, which is disposed at the lower portion of the light transmitting plate, between the upper portion of the first vertical LED chip and the conductor, between the upper portion of the second vertical LED chip and the conductor, And a resistor element disposed between the upper portion and the conductor of the third vertical LED chip.
  • a resistance element may be disposed below the light transmitting plate 500.
  • the resistance elements 710, 720 and 730 are arranged between the upper part of the first vertical LED chip 200 and the conductor 600 at the lower part of the light transmitting plate 500 (see FIG. 13) And is disposed between the upper portion of the LED chip 400 and the conductor 600.
  • an integrated circuit IC
  • the upper electrodes 250, 350 and 450 of the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400 are connected to the light transmitting plate 500 may be formed. Therefore, between the upper electrode 250 of the first vertical LED chip 200 and the upper portion of the conductor 600, between the upper electrode 350 of the second vertical LED chip 300 and the upper portion of the conductor 600, The resistor elements 710, 720 and 730 are respectively connected between the upper electrode 450 of the third vertical LED chip 400 and the upper portion of the conductor 600.
  • a micro-LED module 1000 according to Embodiment B-1 includes a mount substrate 100 having a rectangular or square shape, a plurality of pixel units (not shown) arranged in a matrix array on the mount substrate 100 2).
  • a plurality of pixel units 2 are arranged on one mount substrate 100 of a micro module 1000, but one pixel unit 2 is positioned on one mount substrate 100 It is also within the scope of the present invention.
  • each of the pixel units 2 includes a first vertical LED chip 200, a second vertical LED chip 300, and a third vertical LED chip 300 mounted on the mount substrate 100, (400) and a common electrode (600).
  • the lower electrodes of the first vertical LED chip 100, the second vertical LED chip 300 and the third vertical LED chip 400 are connected to the wiring (not shown) of the mount substrate 100
  • the lower portion of the common electrode 600 is grounded to the mount substrate 100.
  • the mount substrate 100 may be a thin film transistor (TFT) substrate or a printed circuit board (PCB).
  • TFT thin film transistor
  • PCB printed circuit board
  • the top surface width of each of the first vertical LED chip 200, the second vertical LED chip 300, the third vertical LED chip 400 and the common electrode 600 is 100 ⁇ m or less, and most preferably 30 ⁇ m to 70 ⁇ m .
  • Each of the pixel units 2 is connected to the upper part of the first vertical LED chip 200, the upper part of the second vertical LED chip 300 and the upper part of the third vertical LED chip 400, And a pattern wiring layer 700 electrically connecting the upper portions.
  • Each of the pixel units 2 is formed so as to be in contact with the sides of the first vertical LED chip 200, the second vertical LED chip 300, the third vertical LED chip 400 and the common electrode 600 And a supporting layer 800 for supporting the pattern wiring layer 700.
  • Each of the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400 includes a blue LED chip 200, a green LED chip 300 and a red LED chip 400 ), And has a cube shape or a rectangular parallelepiped shape.
  • Each of the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400 includes a first conductive type semiconductor layer and a second conductive type semiconductor layer, Lt; / RTI > The first vertical LED chip 200, the second vertical LED chip 300, and the third vertical LED chip 400 and the common electrode 600 are arranged in a substantially square shape.
  • the upper surface of the first vertical LED chip 200, the second vertical LED chip 300, the third vertical LED chip 400 and the common electrode 600 are connected to a connection wiring
  • the first connection area 201, the second connection area 301, the third connection area 401 and the fourth connection area 601 are provided.
  • the first connection region 201, the second connection region 301, the third connection region 401 and the fourth connection region 601 may include a first vertical LED chip 200, The third vertical LED chip 400, and the common electrode 600. In this case, as shown in FIG.
  • the first vertical LED chip 200, the second vertical LED chip 300, the third vertical LED chip 300, and the third vertical LED chip 300 are connected to the first connection region 201, the second connection region 301 and the third connection region 401,
  • the upper electrode may be formed before the pattern wiring layer 700 is formed and the upper electrode may be formed as a part of the pattern wiring layer 700 when the pattern wiring layer 700 is formed It is possible.
  • the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400 are disposed under the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400,
  • the lower electrodes individually connected to the wirings of the mount substrate 100 are formed for individual driving of the third vertical LED chip 300 and the third vertical LED chip 400.
  • the support layer 800 is formed to be in contact with the side surfaces of the first vertical LED chip 200, the second vertical LED chip 300, the third vertical LED chip 400 and the common electrode 600, Silicon, an epoxy molding compound (EMC), a polyimide film, or the like so as to be integrated with the first vertical LED chip 200, the second vertical LED chip 300, the third vertical LED chip 400, And the like.
  • the support layer 800 serves to support the above-described pattern wiring layer 700 from below and enables the formation of the pattern wiring layer 700.
  • the support layer 800 may include a first vertical LED chip 200, a second vertical LED chip 300, a third vertical LED chip 400, and a common electrode 600
  • the first vertical LED chip 200 is formed by a light reflecting material that reflects light or a light emitting material such as black color that absorbs light
  • the second vertical LED chip 300, and the third vertical LED chip 400 from being undesirably interfered with.
  • the upper surface of the support layer 800 is preferably flush with the upper surfaces of the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400.
  • the upper surfaces of the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400 may be the upper surface of the epitaxial structure or the upper surface of the upper electrode formed on the upper surface of the epitaxial structure. It may be a top surface.
  • the pattern wiring layer 700 is formed to be supported on the support layer 800 and is electrically connected to the first vertical LED chip 200, the second vertical LED chip 300, the third vertical LED chip 400, (600).
  • the wiring batten layer 700 may be formed on the upper surface of the first vertical LED chip 300, the second vertical LED chip 300, and the third vertical LED chip 400 so that the upper surface of the first vertical LED chip 300, A portion of the corner of the vertical LED chip 200, the second vertical LED chip 300, the third vertical LED chip 400 and the common electrode 600, that is, the first connection region 201, The third connection area 401, and the fourth connection area 601, as shown in FIG.
  • the pattern interconnect layer 700 is formed in a substantially C shape so that the first interconnecting region 201 of the first vertical LED chip 200 and the second interconnecting region 200 of the second vertical LED chip 300 are connected to each other,
  • the first vertical wiring part 701 connected to the first wiring part 701 and the second vertical wiring part 701 connected to the end of the first wiring part 701 in the second connection area 301 of the second vertical LED chip 300,
  • a second linear wiring portion 702 connecting the first vertical LED chip 300 and the third vertical LED chip 400 to the third connection region 401 of the third vertical LED chip 400,
  • a fourth wiring region 603 connected to the third connection region 401 and the fourth connection region 601 of the common electrode 600.
  • the third wiring region 601 is connected to the end of the second wiring portion 701 in the connection region 401, (703).
  • the support layer 800 may be formed to cover both the side surfaces of the first vertical LED chip 200 and the third vertical LED chip 300, And the upper surface is preferably a flat surface which is coplanar with the upper surfaces of the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400, A concave surface is formed between one vertical LED chip or between a common electrode and an adjacent vertical LED chip.
  • the pattern wiring layer 700 ' includes a fourth connection region 601 of the common electrode 600 and a first connection region 601 of the first vertical LED chip 200, A first wiring portion 701 'for connecting the connection region 201 and a second connection region 301 of the second vertical LED chip 300 are connected to each other by connecting the fourth connection region 601 of the common electrode 600 and the second connection region 301 of the second vertical LED chip 300.
  • the wiring layer 700 ' is held in contact with the lower support layer 800.
  • the pattern interconnect layer 700 " is formed in a substantially " ⁇ " shape, and the first interconnect region 201 of the first vertical LED chip 200 is formed in a substantially planar shape, And a second connection region 301 of the second vertical LED chip 300.
  • the second vertical connection region 301 of the second vertical LED chip 300 is connected to the first connection region 301 of the second vertical LED chip 300,
  • a second linear wiring portion 702 " connected to the end of the first wiring portion 701 " and connecting the second connection region 301 to the third connection region 401 of the third vertical LED chip 400, Connected to the end of the second wiring part 701 "in the third connection area 401 of the third vertical LED chip 400 and connected to the third connection area 401 and the common electrode 600,
  • the pattern wiring layer 700, 700 ', or 700' may be formed on the first vertical LED chip 200, the second vertical LED chip 300, and the third vertical LED 300 as shown in FIG. 2, FIG. 4,
  • the corner portions of the first vertical LED chip 300, the second vertical LED chip 300 and the third vertical LED chip 400 are connected to the corner regions of the chip 400 and the common electrode 600, It is possible to further increase the luminous efficiency.
  • Example B-4 a method of manufacturing a micro-LED module according to Example B-4 will be described with reference to FIGS.
  • FIGS. 23 to 29 show the first, second, and third vertical LED chips and the common electrodes shown as being arranged in a row, but in reality, as shown in FIG. 2, .
  • the first vertical LED chip 200, the second vertical LED chip 300, the third vertical LED chip 400 and the common electrode 400 are connected to a supporting substrate (not shown) having an adhesive layer 5 4). 2, and a portion where light is emitted from the first vertical LED chip 200, the second vertical LED chip 300, and the third vertical LED chip 400 is referred to as an upper portion 6, the upper portions of the first vertical LED chip 200, the second vertical LED chip 300, and the third vertical LED chip 400 are bonded to the support substrate 4 with their downward facing.
  • the first vertical LED chip 300, the third vertical LED chip 400, and the common electrode 600, which are bonded to the support substrate 4, are interposed between the first vertical LED chip 200, the second vertical LED chip 300, , Epoxy, silicone, EMC (Epoxy Molding Compound), polyimide, or the like is filled in the supporting layer 800 to form the supporting layer 800.
  • the liquid light blocking insulating resin material has a large contact force with the side surfaces of the first vertical LED chip 200, the second vertical LED chip 300, the third vertical LED chip 400, and the common electrode 600, Since the side surfaces are all covered with an amount not overflowing and then hardened, a surface including recesses 801 is formed on the surface not in contact with the supporting substrate 4.
  • the surface in contact with the support substrate 4 is formed as a flat surface 802.
  • the support substrate 4 is turned over and the support substrate 4 is connected to the vertical LED chip 200, the second vertical LED chip 300, the third vertical LED chip 400 and the common electrode 600, ).
  • the upper surface of the electrode 600 is formed in the same plane and includes a supporting layer 800 including concave portions 801 and a first vertical LED chip 200, a second vertical LED chip 300, a third vertical LED chip 400 and the common electrode 600 may be temporarily attached with a chip holding sheet 6.
  • the first vertical LED chip 200, The support layer 800 formed in contact with the side surface of the support layer 800 is completed.
  • a first vertical LED chip 200, a second vertical LED chip 300, and a third vertical LED chip 400 which are flush with the upper flat surface of the support layer 800, And a mask 7 having a pattern hole 7a corresponding to the shape of the pattern wiring layer shown in Fig. 2, for example, is formed on the common electrode 600.
  • the mask 7 having the pattern holes 7a may be formed with a pattern hole 7a through exposure after forming a PR film.
  • an upper portion (electrode) of the first vertical LED chip 200, an upper portion (electrode) of the second vertical LED chip 300, and a lower portion of the first vertical LED chip 300 are formed through sputtering /
  • a pattern wiring layer 700 connecting an upper portion (electrode) of the third vertical LED chip 400 and an upper portion of the common electrode 800 is formed. At this time, the pattern wiring layer 700 is supported by the underlying support layer 800.
  • the mask 7 is removed so that the first, second, and third vertical LED chips 200, 300, and 400 are supported by the support layer 800 having electrical insulation.
  • a pattern wiring layer 700 for electrically connecting the upper portions (electrodes) of the common electrode 600 to the common electrode 600 are formed.
  • the lower parts (electrodes) of the first, second, and third vertical LED chips 200, 300, and 400 are individually connected to the wirings of the mount substrate 100, Second, and third vertical LED chips 200, 300, and 400 are commonly connected to the common electrode 600. Therefore, the first, second, and third vertical LED chips 200, , 300, and 400 can be individually driven.
  • a micro-LED module 1000 according to Embodiment C-1 includes a mount substrate 100 having a rectangular or square shape, a pixel unit 2 disposed on the mount substrate 100, .
  • one pixel unit 2 may be disposed on one mount substrate 100, or a plurality of pixel units 2 may be arranged in a matrix form.
  • the plurality of pixel units 2 include two or more pixel units 2 arranged along a virtual straight line in a horizontal direction or a vertical direction.
  • the pixel unit 2 includes a first vertical LED chip 200 emitting blue light mounted on the mount substrate 100, a second vertical LED chip 300 emitting red light, a third vertical LED chip 300 emitting green light, A vertical LED chip 400, and a common electrode unit 500.
  • the pixel unit 2 includes three vertical LED chips 200, 300 and 400, but may also include a larger number of vertical LED chips.
  • first vertical LED chip 200 the second vertical LED chip 300, and the third LED vertical LED chip 400 may be changed.
  • Each of the first vertical type LED chip 200, the second vertical type LED chip 300 and the third vertical type LED chip 400 has a width of 100 ⁇ m or less and most preferably 30 to 70 ⁇ m.
  • the mount substrate 100 may be a thin film transistor (TFT) substrate or a printed circuit board (PCB).
  • Each of the first vertical type LED chip 200, the second vertical type LED chip 300 and the third vertical type LED chip 400 includes a first conductivity type semiconductor layer 20, an active layer 30 ) And a second conductivity type semiconductor layer (40).
  • each of the first vertical type LED chip 200, the second vertical type LED chip 300 and the third vertical type LED chip 400 may be formed on the upper surface of the second conductive type semiconductor layer 40, And may further include an electrode 50.
  • the upper electrode 50 may include a transparent electrode layer that transmits light or a metal electrode that covers only a portion of the second conductive type semiconductor layer 40.
  • Each of the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400 is connected to the wirings of the mount substrate 100, And further includes an electrode (10).
  • the lower electrode 10 is preferably a reflective electrode.
  • the lower electrode 10 is individually formed under the vertical LED chips 200, 300, or 400 to function as an input electrode, and the upper electrode 50 is connected to the vertical LED chips 200 and 300 Or 400) to function as an output electrode.
  • Each of the first vertical type LED chip 200, the second vertical type LED chip 300 and the third vertical type LED chip 400 includes a part of the upper surface of the upper electrode 50, 10, in particular, the shield portion 60 covering the sides of the semiconductor layers.
  • the shield portion 60 may be a passivation layer having electrical insulation.
  • the micro LED module 1000 is formed to cover the side surfaces of the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400
  • a support 800 having an opening for exposing an upper surface of each of the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400
  • the second vertical type LED chip 300 and the third vertical type LED chip 400 are formed on the upper surface of the common electrode unit 500 and the first vertical type LED chip 200, And a wiring pattern layer 700 connecting the upper surfaces of the wiring pattern layers 700.
  • the upper surfaces of the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400 are exposed by the openings formed in the support portion 800.
  • the upper surface of the first vertical type LED chip 200, the second vertical type LED chip 300 and the third vertical type LED chip 400, which are in direct contact with the wiring pattern layer 700, May be the surface of the upper electrode 50
  • the support portion 800 is preferably formed of a light absorbing material such as a black matrix material to prevent optical interference between neighboring vertical LED chips. Further, it is preferable that the support portion 800 has electrical insulation property.
  • the supporting part 800 may be formed on the first vertical LED chip 300, the third vertical LED chip 400 and the common electrode part 500, The second vertical type LED chip 300 and the third vertical type LED chip 400 are formed on the mount substrate 100 after being mounted on the mount substrate 100.
  • the first vertical type LED chip 300 As shown in FIG.
  • the support 800 may include a first vertical LED chip 200, a second vertical LED chip 300, and a third vertical LED chip 300 on a sacrificial substrate (not shown)
  • Type LED chip 400 is attached on the sacrificial substrate so that the lower surface faces the sacrificial substrate, and then the first vertical LED chip 200, the second vertical LED chip 300, and the third vertical LED chip 400, respectively.
  • the wiring pattern layer 700 may be formed on the supporting portion 800 so that the first vertical type LED chip 200, the second vertical type LED chip 300, and the third vertical type LED chip 400, The sacrificial substrate is removed and the surface of the sacrificial substrate is removed from the mount substrate 100.
  • the first vertical type LED chip integrated with the support portion 800 200, the second vertical type LED chip 300 and the third vertical type LED chip 400 may be mounted on the mount substrate 100.
  • the wiring pattern layer 700 starts from the upper surface of the common electrode unit 500 and passes over the upper surface of the supporting unit 800 through three paths so that the first vertical LED chip 200, Chip 300 and the upper surface of the third vertical LED chip 400, respectively.
  • the wiring pattern layer 700 may cover the upper surface of the first vertical type LED chip 200, the second vertical type LED chip 300 and the third vertical type LED chip 400 at a minimum And is formed by three linear wiring patterns branched from the upper surface of the common electrode unit 500.
  • the wiring pattern layer 700 is formed on the upper surface of the common electrode unit 500 and the upper surface of the first vertical LED chip 200, A first wiring portion 702 connecting a top surface of the common electrode portion 500 and an upper surface of the second vertical LED chip 300, And a third wiring portion 703 connecting the upper surface of the first vertical LED chip 400 and the upper surface of the third vertical LED chip 400.
  • the wiring pattern layer 700 covers the upper surfaces of the supporting portion 1800 and the first, second and third vertical LED chips 200, 300 and 400, And a pattern hole for partially exposing the upper surfaces of the chips 200, 300, and 400 and the upper surface of the common electrode unit 500.
  • physical vapor deposition such as sputtering or a chemical vapor deposition method may be used.
  • a conductive nonmetallic material such as ITO having light transmittance and conductivity may be deposited and formed on the upper surfaces of the vertical LED chips 200, 300, and 400 and the common electrode unit 500 so as to be in contact with each other.
  • the micro-LED module 1000 may further include an insulating material layer covering the wiring pattern layer 700 to protect the wiring pattern layer 700.
  • the insulating material layer is formed to cover at least the upper surface of the wiring pattern layer 700. As shown in the figure, the insulating material layer is formed so as to cover only the wiring pattern layer with a minimum area in the case of having a light-impermeable property. However, if the insulating material layer has light permeability, And may be formed to cover all of the third vertical type LED chips 200, 300, and 400.
  • the process of forming the support portion 800 and the subsequent process of forming the wiring pattern layer 700 may be performed by using the first, second, and third vertical LED chips 200, 300, Second and third vertical LED chips 200, 300, and 400 and the common electrode unit 500 may be mounted on the mount substrate 100.
  • the first, second, and third vertical LED chips 200, The common electrode unit 500 may be mounted on a sacrificial substrate (not shown) instead of the mount substrate 100.
  • a wiring pattern layer 700 connecting the first, second and third vertical LED chips 200, 300, and 400 and the common electrode unit 500 is formed on the supporting unit 800 Only the step of forming the insulating material layer 900 following the step of forming the insulating material layer 900 is required. In the latter case, the sacrificial substrate is removed after the step of forming the insulating material layer, A step of connecting the lower electrode layer 10 of the third vertical LED chips 200, 300 and 400 and the lower portion of the common electrode unit 500 to the wirings of the mount substrate 100 is further required.
  • a micro-LED module 1000 includes a mount substrate 100 having a rectangular or square shape, at least one pixel unit 100 arranged on the mount substrate 100, (2).
  • the pixel unit 2 includes a first vertical LED chip 200 emitting blue light mounted on the mount substrate 100, a second vertical LED chip 300 emitting red light, and a third vertical LED chip 300 emitting green light. And an LED chip 400. Note that the order of the first vertical LED chip 200, the second vertical LED chip 300 and the third LED vertical LED chip 400 may be changed.
  • Each of the first vertical type LED chip 200, the second vertical type LED chip 300 and the third vertical type LED chip 400 has a width of 100 ⁇ m or less and most preferably 30 to 70 ⁇ m.
  • the mount substrate 100 may be a thin film transistor (TFT) substrate or a printed circuit board (PCB).
  • Each of the first vertical type LED chip 200, the second vertical type LED chip 300 and the third vertical type LED chip 400 includes a first conductivity type semiconductor layer 20, an active layer 30 ) And a second conductivity type semiconductor layer (40).
  • each of the first vertical type LED chip 200, the second vertical type LED chip 300 and the third vertical type LED chip 400 may be formed on the upper surface of the second conductive type semiconductor layer 40, And may further include an electrode layer 50.
  • Each of the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400 is connected to the wirings of the mount substrate 100, And an electrode layer (10).
  • the lower electrode layer 10 is preferably a reflective electrode.
  • the micro LED module 1000 is formed to cover the sides of the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400
  • An insulating supporting part 800 having an opening for exposing an upper surface of each of the first vertical type LED chip 200, the second vertical type LED chip 300 and the third vertical type LED chip 400,
  • the first vertical LED chip 300 and the third vertical LED chip 400 are formed on the insulating supporting portion 800 and are electrically connected to the upper surface of the first vertical LED chip 300,
  • a wiring pattern layer 700 that is connected to the common electrode portion and functions as a common electrode portion.
  • the support portion of the above embodiment is formed higher than the upper surface of the vertical type LED chip having the upper electrode at the upper end to cover a part of the upper end of the vertical type LED chip, that is, the upper electrode, And is formed to have the same height as the top surface of the LED chip.
  • the insulating support 800 is preferably formed of a light absorbing material such as a black matrix material to prevent light interference between neighboring vertical LED chips.
  • the insulating support part 800 may be formed on the mount substrate 100 such that the first vertical type LED chip 200, the second vertical type LED chip 300 and the third vertical type LED chip 400 are mounted on the mount substrate 100
  • the first vertical LED chip 300 and the third vertical LED chip 400 may be formed on the mount substrate 100 to cover the sides of the first vertical LED chip 200, the second vertical LED chip 300, and the third vertical LED chip 400.
  • the insulative support portion 800 may include a first vertical LED chip 200, a second vertical LED chip 300, and a third vertical LED chip 300 on a sacrificial substrate (not shown) After attaching the vertical LED chip 400 so that the lower surface faces the sacrificial substrate, the first vertical LED chip 200, the second vertical LED chip 300, and the third vertical LED chip 300, (Not shown).
  • the wiring pattern layer 700 is formed on the insulating supporting portion 800 to form the first vertical type LED chip 200, the second vertical type LED chip 300 and the third vertical type LED chip 400
  • the first and second vertical LEDs 800 and 800 are integrally connected to the insulating substrate 800 so that the sacrificial substrate is removed and the surface on which the sacrificial substrate is removed comes into contact with the mount substrate 100.
  • the second vertical type LED chip 300 and the third vertical type LED chip 400 may be mounted on the mount substrate 100.
  • the wiring pattern layer 700 is formed on the upper surface of the insulating support portion 800 and the upper surface of the first vertical type LED chip 200 and the second vertical type LED chip 300, The wiring pattern layer 700 is formed on the upper surface of the first vertical type LED chip 300 and the second vertical type LED chip 300. In this case, In a line shape having a fine width so as to cover the minimum width.
  • the wiring pattern layer 700 is formed to be supported on the upper surface of the insulating supporting portion 800 and is electrically connected to the first vertical type LED chip 200, the second vertical type LED chip 300, A first wiring portion 701 connected to the upper surface of the LED chip 400 and a second wiring portion 701 connected to the first wiring portion 701 and extending along a side surface of the insulating support portion 800, And a second wiring portion 702 to be grounded.
  • At least a part of the wiring pattern layer 700 covers the upper surface of the insulating support portion 800 and the first, second and third vertical LED chips 200, 300 and 400, , And a pattern hole that partially exposes the third vertical type LED chips (200, 300, 400).
  • the first wiring portion 701 is formed between the first, second, and third vertical LED chips 200, 300, and 400 in one pixel unit as well as between the vertical LEDs of neighboring pixel units And are formed to connect between the chips. Accordingly, in this embodiment, one second wiring portion 702 can be commonly connected to the vertical type LED chips included in the plurality of pixel units. Alternatively, the first wiring portion 701 and the second wiring portion 702 may be provided for one pixel unit, respectively. In this case, the second wiring portion 702 may be provided on the insulating support portion 702. In this case, (Not shown).
  • the micro-LED module 1000 may further include an insulating material layer 900 covering the wiring pattern layer 700 to protect the wiring pattern layer 700.
  • the insulating material layer 900 is formed to cover at least the upper surface of the wiring pattern layer 700. As shown in the figure, the insulating material layer 900 is formed so as to cover only the wiring pattern layer 700 with a minimum area in the case of having a light-impermeable property. However, if the insulating material layer 900 has light permeability, 800, and the first, second, and third vertical LED chips 200, 300, and 400.
  • the process of forming the insulating support portion 800 and the subsequent process of forming the wiring pattern layer 700 may be performed by using the first, second, and third vertical LED chips 200 and 300 400 and 400 may be mounted on the mount substrate 100.
  • the first, second and third vertical LED chips 200, 300 and 400 may be mounted on the mount substrate 100.
  • the mount substrate 100 may be mounted on the mount substrate 100.
  • Or may be performed while being mounted on a sacrificial substrate (not shown).
  • the first and second vertical LED chips 200, 300, and 400 are connected to each other through the first, second, and third vertical LED chips 200, 300, and 400 and between the first,
  • the sacrificial substrate is removed after the step of forming the wiring pattern layer 700 on the insulating supporting portion 800 and the step of forming the insulating material layer thereafter and then the first,
  • the step of connecting the lower electrode of the LED chips 200, 300 and 400 and the lower end of the second wiring portion 702 of the wiring pattern layer 700 to the wirings of the mount substrate 100 is further required It is.
  • Figs. 34 and 35 are views for explaining the micro-LED module according to the embodiment C-3. Fig.
  • the first vertical LED chip 200, the second vertical LED chip 300, and the third vertical LED chip 400 integrally include a shield portion 60.
  • the shield portion 60 includes a first conductive type semiconductor layer 20 of the first vertical type LED chip 200, a second vertical type LED chip 300 and a third vertical type LED chip 400, an active layer 30 And the side surfaces of the second conductivity type semiconductor layer 40 are formed.
  • the shield portion 60 may be formed of a material that reflects or absorbs light, and is most preferably formed of a reflector such as a DBR (Distributed Bragg Reflector) or a metal reflector. Note that the configuration of the shield portion 60 of the first embodiment described above may also be the same as this embodiment.
  • the insulating supporting portion 800 can be formed of a transparent material such as the first vertical type LED chip 200 and the second vertical type LED chip 800. In this case, 300, and the third vertical LED chip 400.
  • the first vertical LED chip 300, the second vertical LED chip 300, and the third vertical LED chip 400 are formed to cover the upper surface of the first vertical LED chip 300 and the third vertical LED chip 400, And the wiring pattern layer 700 is connected to the upper surface of the first vertical LED chip 300 and the third vertical LED chip 400, And a protruding connection portion 703.
  • 36 is a view for explaining a micro-LED module according to the embodiment C-4.
  • each of the first, second and third vertical type LED chips 200, 300, and 400 having the shield portion 60 on the side surface thereof is electrically connected to the insulating support portion 800, A layer 700 and an insulating material layer 900 are sequentially formed by a step cover process.
  • the insulating support 800 and the insulating material layer 900 may be a light-transmitting insulating material, preferably a passivation layer formed by depositing SiO 2 .
  • the opening for exposing the upper surfaces of the first, second, and third vertical LED chips 200, 300, and 400 is formed in the insulating supporting portion 800.
  • a metal is deposited along the surface of the insulating support portion 800 where the opening is formed to form a wiring pattern layer (not shown) connected to the upper surface of the first, second, and third vertical LED chips 200, 300, 700 are formed.
  • the wiring pattern layer 700 extends along the upper surface of the insulating support portion 800 and is connected to the upper surfaces of the first, second and third vertical LED chips 200, 300, and 400 in a similar manner as in the previous embodiment.
  • a second wiring portion 702 extending along the side surface of the insulating support portion 800 and connected to the mount substrate 100 while being connected to the first wiring portion 701 do.
  • an insulating material layer 900 is further formed to cover the wiring pattern layer 700.
  • the neighboring vertical LED chips 200 and 300 or 300 and 400 may be in contact with each other between neighboring shield portions 60. In this case, the shield portion 60 also functions as a part of the support portion.
  • FIG. 37 is a cross-sectional view for explaining a display panel according to Embodiment D, in which the vertical LED chips and the common electrode are arranged in a line in order for convenience of illustration.
  • the LED display panel includes a plurality of LED pixel units 2 and a mount substrate 100 on which the LED pixel units 2 are arranged.
  • the mount substrate 100 is formed in a rectangular or square shape, and the plurality of LED pixel units 2 are arranged in a matrix array on the mount substrate 100.
  • Each of the plurality of LED pixel units 2 includes a first vertical LED chip 200 that emits red light by applying a current, a second vertical LED chip 300 that emits green light by applying a current, and a second vertical LED chip 300 that emits blue light And a third vertical LED chip 400 which emits light.
  • each of the plurality of LED pixel units 2 is commonly connected to the upper electrodes of the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400 And a common electrode 600 connected thereto.
  • Each of the plurality of LED pixel units 2 is connected to the lower electrodes of the first vertical LED chip 300, the second vertical LED chip 300 and the third vertical LED chip 400, A second connection part 520 and a third connection part 530 connected to the common electrode 600 and a fourth connection part 540 connected to the lower part of the common electrode 600.
  • the position of the upper electrode is defined as the upper end of the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400, and the position of the lower electrode Is provided at the lower ends of the first vertical LED chip 200, the second vertical LED chip 300, and the third vertical LED chip 400.
  • the upper electrode and the lower electrode have different electrical polarities.
  • the first connection unit 510, the second connection unit 520, the third connection unit 530 and the fourth connection unit 540 are connected to the first vertical LED chip 200, (300), the third vertical LED chip (400), and the common electrode (600).
  • the first connection part 510, the second connection part 520, the third connection part 530 and the fourth connection part 540 may include a first via hole passing through the support substrate 501, A second via 522, a third via 532, and a fourth via 542, which are formed in the first, second, third, and fourth via holes, respectively.
  • the support substrate 501 is an electrically insulating substrate such as a glass or a silicon substrate and the first via 512, the second via 522, the third via 532, 542 may be formed of a metal material, preferably Au, deposited on the inner surfaces of the first via hole, the second via hole, the third via hole, and the fourth via hole.
  • the first via 512, the second via 522, the third via 532, and the fourth via 542 are formed to have a hollow V by controlling the deposition amount of the metal material. And this hollow (V) permits the inflow of a part of the solder, which will be described below, to enable more stable bonding.
  • the first connection part 510, the second connection part 520, the third connection part 530 and the fourth connection part 540 are formed on the first via 512, the second via 522, A first electrode film 513, a second electrode film 523, and a second electrode film 543 formed separately on the support substrate 501 so as to be in contact with the third vias 532 and the upper portion of the fourth vias 542, respectively.
  • the LED pixel unit 2 is connected to the side surfaces of the first vertical LED chip 200, the second vertical LED chip 300, the third vertical LED chip 400 and the common electrode 600, And a support layer 800 formed to be in contact with and electrically insulative.
  • the upper vertical electrodes of the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400 are electrically connected to each other by the pattern interconnection layer 700 supported by the supporting layer 800, And the upper surface of the common electrode 600 is connected.
  • the support layer 800 may be formed on a flat upper surface that supports the pattern interconnection layer 700 and between the first vertical LED chip 200 and the second vertical LED chip 300 and between the second vertical LED chip 300 And a lower surface including a recess 810 between the first vertical LED chip 400 and the third vertical LED chip 400 or between the first or third vertical LED chip 200 or 400 and the common electrode 600.
  • the supporting layer 800 may be formed on the mounting substrate such that the first vertical LED chip 200, the second vertical LED chip 300, the third vertical LED chip 400, And is packaged integrally with the electrode 600.
  • the supporting layer 800 is formed of a resin material containing a light absorbing or light reflecting material.
  • the upper surface of the support layer 800 may be formed on the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 300 400 and the upper surface of the common electrode 600 are flat.
  • An underfill layer 1100 is formed between the supporting substrate 501 and the supporting layer 800 by filling the resin layer with a reliable material to protect the supporting substrate 501 and the vertical LED chip.
  • the first electrode film 513 and the lower electrode of the first vertical LED chip 200 are disposed between the second electrode film 523 and the lower electrode of the second vertical LED chip 300,
  • the bump ball 180 is formed between the third electrode film 533 and the lower electrode of the third vertical LED chip 400 and between the lower portion of the common electrode 600 and the fourth electrode film 543, Lt; / RTI >
  • the bump balls 180 are formed along the periphery of the first via 512, the second via 522, the third via 532, or the fourth via 542.
  • the plurality of bump balls 180 more preferably, three or more bump balls 180 are formed at regular intervals with a constant distance from the center of one via 512, 522, or 532 .
  • the first electrode film 512, the second electrode film 522, the third electrode film 532 and the fourth electrode film 542 are defined by electrode separation lines L, (L) are formed by etching the metal layer stacked on the support substrate 501.
  • the metal layer may be a copper foil bonded to the support substrate 501 by an adhesive, more specifically a UV curable adhesive 502.
  • the copper foil is etched to form the first electrode film 512
  • the first, second, and third via holes 541 and 542 are formed in the junction body in which the support substrate 501 and the copper foil are joined.
  • Second, third and fourth electrode films 512, 522, 532 and 542 are formed by depositing Au on the first, second, third and fourth via holes, respectively.
  • First, second, third and fourth vias 512, 512, 532, and 542 may be formed.
  • the vertical LED chips 200, 300, and 400 and the common electrode 600 are shown as being arranged in a line along one cross section and the pattern wiring layer 500 is shown as being linear along one row, Most preferably, three vertical LED chips 200, 300, and 400 and one common electrode 600 may be arranged in a rectangular shape (see FIG. 38).
  • the pattern wiring layer 700 is preferably formed in a linear shape having a very small line width so that the region where the vertical LED chips 200, 300 and 400 are covered by the pattern wiring layer 700 can be minimized.
  • a plurality of LED pixel units 2 having the above structure are mounted on the mount substrate 100.
  • the mount substrate 100 includes a first wiring portion 110, a second wiring portion 120, a third wiring portion 130, and a fourth wiring portion 140.
  • the first wiring part 110, the second wiring part 120, the third wiring part 130 and the fourth wiring part 140 are formed on the first vertical ad chip 200, Output terminals for driving the second vertical LED chip 300 and the third vertical LED chip 400 are formed in the first connection part 510 and the second connection part 520.
  • the first connection part 510, the second connection part 520, the third connection part 530 and the fourth connection part 540 are electrically connected to the first via 512, the second via 522, A third via 532, and a fourth via 542.
  • the third via 532 and the fourth via 542 are shown in FIG. The lower ends of the first vias 512, the second vias 522, the third vias 532 and the fourth vias 542 are exposed from the bottom surface of the supporting substrate 501, 100).
  • the solder 190 may be formed between the upper end of the first wiring part 110 and the first via 512, between the upper end of the second wiring part 120 and the second via 522, The upper ends of the third wiring parts 130 and the third vias 532 and the upper ends of the fourth wiring parts 140 and the fourth vias 542 are connected. At this time, each of the solders 190 is partially formed in the hollow (V) of the first via 512, the second via 522, the third via 532, and the fourth via 542 Can be introduced. More reliable bonding is possible since the solders 190 are hardened after fixing them in the hollow V of the vias 512, 522, 532 and 542 to fix the LED pixel units 2.
  • the number of the LED pixel units 2 is plural.
  • the first wiring part 110 is commonly connected to the first connection parts 510 of the plurality of LED pixel units 2 and the second wiring part 120 is connected to the plurality of LED pixel units 2
  • the third wiring part 130 is commonly connected to the third connection parts 530 of the plurality of LED pixel units 2 and the fourth wiring part 130 is commonly connected to the second connection parts 520 of the plurality of LED pixel units 2
  • (140) is commonly connected to fourth connections (540) of the plurality of LED pixel units (2).
  • the first wiring part 110 includes a first wiring pattern 111 formed on the first insulating layer 101 and a second wiring pattern 111 connected to the first wiring pattern 111 on the lower side and solder 190 And a first wiring via 112 connected to the first via 512 by a second wiring via 512.
  • the second wiring part 120 is connected to the second wiring pattern 121 formed on the second insulating layer 102 and the second wiring pattern 121 on the lower end and the solder 190 on the upper part. And a second wiring via 122 connected to the second via 522 by a second via hole 522.
  • the third wiring part 130 is connected to the third wiring pattern 131 formed at the bottom of the second insulating layer 102 and the third wiring pattern 131 at the bottom, And a third wiring via 132 connected to the third via 532.
  • the fourth wiring part 140 includes a fourth wiring pattern 141 and a fourth wiring pattern 141 connected to the fourth wiring pattern 141 at the lower end and connected to the fourth via 542 by a solder 190 at the upper end. Wiring vias 142 are formed.
  • connection portion 510, 520, 530 and 540 of the mount substrate 2 In order to show all the connection relationships between the connection portions 510, 520, 530 and 540 of the mount substrate 2 and the wiring portions 110, 120, 130 and 140 of the mount substrate 100, It should be noted that the drawings show portions that can not be displayed in one cross section.
  • FIGS. 38, 39, 40 and 41 various different embodiments (D-1, D-2, D-3) of the LED display panel plane and the LED pixel unit plane can be seen. It should be noted that FIGS. 38, 39, 40, and 41 do not coincide with FIG. 37, which is used to show all the various configurations and connection relationships to be described in one section.
  • the shape (i.e., the planar shape) of the mount substrate 100 is a square or a rectangle, and a plurality of LED pixel units 2 are formed on the mount substrate 100 ) Arranged in a matrix array.
  • the supporting substrate 501 is connected to the lower electrode of the first vertical LED chip 200, the lower electrode of the second vertical LED chip 300, and the third vertical LED chip 400 37), the second connection part 520 (see FIG. 37) and the third connection part 530 (see FIG. 37), which are electrically connected to the lower surface of the common electrode 600 and the lower surface of the common electrode 600, And a fourth connection unit 540 (refer to FIG. 37) connected to a lower portion of the common electrode 600.
  • the lower electrodes of the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400 are connected to the first through third connection parts 510, 520, 530 And the lower portion of the common electrode 600 is grounded to the mount substrate 100 (see FIG. 37) through a fourth connecting portion 540 (see FIG. 37) .
  • the mount substrate may be a substrate having the structure shown in FIG. 37 or a TFT (Thin Film Transistor) substrate or a PCB (Printed Circuit Board) having another structure.
  • TFT Thin Film Transistor
  • PCB printed Circuit Board
  • each of the first vertical LED chip 200, the second vertical LED chip 300, the third vertical LED chip 400 and the common electrode 600 is 100 ⁇ m or less, and most preferably 30 ⁇ m to 70 ⁇ m .
  • Each of the LED pixel units 2 is connected to the upper part of the first vertical LED chip 200, the upper part of the second vertical LED chip 300 and the upper part of the third vertical LED chip 400, And a pattern wiring layer 700 for electrically connecting the upper portion of the pattern wiring layer 700.
  • Each of the LED pixel units 2 is connected to the side surfaces of the first vertical LED chip 200, the second vertical LED chip 300, the third vertical LED chip 400 and the common electrode 600, And a support layer 800 for supporting the pattern wiring layer 700.
  • Each of the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400 includes a red LED chip 200, a green LED chip 300 and a blue LED chip 400 ), And has a cube shape or a rectangular parallelepiped shape.
  • Each of the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400 includes a first conductive type semiconductor layer and a second conductive type semiconductor layer, Lt; / RTI > The first vertical LED chip 200, the second vertical LED chip 300, and the third vertical LED chip 400 and the common electrode 600 are arranged in a substantially square shape.
  • the upper surface of the first vertical LED chip 200, the second vertical LED chip 300, the third vertical LED chip 400 and the common electrode 600 are connected to a connection wiring
  • the first connection area 201, the second connection area 301, the third connection area 401 and the fourth connection area 601 are provided.
  • the first connection region 201, the second connection region 301, the third connection region 401 and the fourth connection region 601 may include a first vertical LED chip 200, The third vertical LED chip 400, and the common electrode 600. In this case, as shown in FIG.
  • the first vertical LED chip 200, the second vertical LED chip 300, the third vertical LED chip 300, and the third vertical LED chip 300 are connected to the first connection region 201, the second connection region 301 and the third connection region 401,
  • the upper electrode may be formed before the pattern wiring layer 700 is formed and the upper electrode may be formed as a part of the pattern wiring layer 700 when the pattern wiring layer 700 is formed It is possible.
  • the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400 are disposed under the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400,
  • the lower electrodes individually connected to the wirings of the mount substrate 100 are formed for individual driving of the third vertical LED chip 300 and the third vertical LED chip 400.
  • the support layer 800 is formed to be in contact with the side surfaces of the first vertical LED chip 200, the second vertical LED chip 300, the third vertical LED chip 400 and the common electrode 600, Silicon, an epoxy molding compound (EMC), a polyimide film, or the like so as to be integrated with the first vertical LED chip 200, the second vertical LED chip 300, the third vertical LED chip 400, And the like.
  • the support layer 800 serves to support the above-described pattern wiring layer 700 from below and enables the formation of the pattern wiring layer 700.
  • the support layer 800 may include a first vertical LED chip 200, a second vertical LED chip 300, a third vertical LED chip 400, and a common electrode 600
  • the support layer 800 is formed of a light absorbing material such as black color absorbing light or a light reflecting material that reflects light
  • the first vertical prevents the light generated from the LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400 from being undesirably interfered with. Further, It can play a role of absorption.
  • the upper surface of the support layer 800 is preferably flush with the upper surfaces of the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400.
  • the upper surfaces of the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400 may be the upper surface of the epitaxial structure or the upper surface of the upper electrode formed on the upper surface of the epitaxial structure. It may be a top surface.
  • the pattern wiring layer 700 is formed to be supported on the support layer 800 and is electrically connected to the first vertical LED chip 200, the second vertical LED chip 300, the third vertical LED chip 400, (600).
  • the wiring batten layer 700 may be formed on the upper surface of the first vertical LED chip 300, the second vertical LED chip 300, and the third vertical LED chip 400 so that the upper surface of the first vertical LED chip 300, A portion of the corner of the vertical LED chip 200, the second vertical LED chip 300, the third vertical LED chip 400 and the common electrode 600, that is, the first connection region 201, The third connection area 401, and the fourth connection area 601, as shown in FIG.
  • the pattern interconnect layer 700 is formed in a substantially C shape so that the first interconnecting region 201 of the first vertical LED chip 200 and the second interconnecting region 200 of the second vertical LED chip 300 are connected to each other, A first linear pattern unit 701 connected to the first linear pattern unit 701 and connected to an end of the first linear pattern unit 701 in a second connection area 301 of the second vertical LED chip 300, A second linear pattern portion 702 connecting the second connection region 301 and the third connection region 401 of the third vertical LED chip 400 and a second linear pattern portion 702 connecting the third vertical LED chip 400, The third linear region 702 is connected to the end of the second linear pattern unit 702 in the third connection region 401 and connects the third connection region 401 and the fourth connection region 601 of the common electrode 600, And a linear pattern portion 703.
  • the supporting layer 800 may be formed to cover both the side surfaces of the first vertical LED chip 200 and the third vertical LED chip 300, And the upper surface is preferably a flat surface which is coplanar with the upper surfaces of the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400, A concave surface is formed between one vertical LED chip or between a common electrode and an adjacent vertical LED chip.
  • the pattern interconnection layer 700 includes a fourth connection region 601 of the common electrode 600 and a first connection region 601 of the first vertical- A first linear pattern portion 701 'connecting the connection region 201 and a second connection region 301 between the fourth connection region 601 of the common electrode 600 and the second vertical LED chip 300 And a third linear pattern part 702 'connecting the fourth connection area 601 of the common electrode 600 and the third connection area 401 of the third vertical LED chip 400.
  • the second linear pattern part 702' The first straight line portion 701 ', the second straight line pattern portion 702', and the third straight line pattern portion 703 'are formed in the fourth connection region 601 It is connected. Also in this embodiment, the pattern wiring layer 700 'is held in contact with the lower support layer 800.
  • the pattern wiring layer 700 " is formed in a substantially " And a second connecting area 301 of the second vertical LED chip 300 and a second connecting area 301 of the second vertical LED chip 300 and a second connecting area 301 of the second vertical LED chip 300, A second straight line pattern portion connected to an end of the first linear pattern portion 701 "and connecting the second connection region 301 to the third connection region 401 of the third vertical LED chip 400 And the third connection region 401 and the common electrode 401 are connected to the end of the second linear pattern portion 701 " in the third connection region 401 of the third vertical LED chip 400, A third straight line pattern portion 703 "connecting the fourth connection region 601 of the third straight line pattern portion 600 and a third straight line pattern portion 703"
  • the fourth connection area 601 and Group comprises a fourth straight pattern portion (704 ") for connecting the first connection region 201.
  • the pattern wiring layer 700, 700 'or 700 may be formed on the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED 300 as shown in FIG. 39, FIG. 40,
  • the corner portions of the first vertical LED chip 300, the second vertical LED chip 300 and the third vertical LED chip 400 are connected to the corner regions of the chip 400 and the common electrode 600, It is possible to further increase the luminous efficiency.

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Abstract

La présente invention concerne un dispositif électroluminescent. Le dispositif électroluminescent comprend un substrat de montage sur lequel sont formés un premier plot d'électrode, un deuxième plot d'électrode, un troisième plot d'électrode et un quatrième plot d'électrode; une première puce de DEL verticale qui est montée sur le substrat de montage de telle sorte que sa partie inférieure est connectée au premier plot d'électrode; une deuxième puce de DEL verticale qui est montée sur le substrat de montage de telle sorte que sa partie inférieure est connectée au deuxième plot d'électrode; une troisième puce de DEL verticale qui est montée sur le substrat de montage de telle sorte que sa partie inférieure est connectée au troisième plot d'électrode; une plaque de transmission de lumière conductrice qui est connectée électriquement à la partie supérieure de la première puce de DEL verticale, de la deuxième puce de DEL verticale et de la troisième puce de DEL verticale; et un conducteur qui connecte la plaque de transmission de lumière conductrice et le quatrième plot d'électrode, une puissance d'excitation individuelle étant appliquée à la première puce de DEL verticale, à la deuxième puce de DEL verticale et à la troisième puce de DEL verticale, respectivement, à travers le premier plot d'électrode, le deuxième plot d'électrode et le troisième plot d'électrode, respectivement, ou à travers le quatrième plot d'électrode.
PCT/KR2018/008332 2017-08-28 2018-07-24 Dispositif électroluminescent pour dispositif d'affichage de pixels à del WO2019045277A1 (fr)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
KR20170108410 2017-08-28
KR10-2017-0108410 2017-08-28
KR1020180005997A KR102519737B1 (ko) 2018-01-17 2018-01-17 마이크로 엘이디 모듈 및 그 제조방법
KR10-2018-0005997 2018-01-17
KR10-2018-0014089 2018-02-05
KR1020180014089A KR20190094665A (ko) 2018-02-05 2018-02-05 마이크로 엘이디 모듈
KR1020180034570A KR20190112504A (ko) 2018-03-26 2018-03-26 엘이디 픽셀 유닛 및 이를 포함하는 엘이디 디스플레이 패널
KR10-2018-0034570 2018-03-26
KR1020180056691A KR102519201B1 (ko) 2017-08-28 2018-05-17 픽셀용 발광소자 및 엘이디 디스플레이 장치
KR10-2018-0056691 2018-05-17

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CN111863832A (zh) * 2019-04-30 2020-10-30 云谷（固安）科技有限公司 显示面板及其制造方法、电子设备
CN112242385A (zh) * 2020-10-28 2021-01-19 长春希龙显示技术有限公司 基于玻璃基板的Mirco-LED无源驱动显示单元
CN112530301A (zh) * 2020-12-02 2021-03-19 湖北长江新型显示产业创新中心有限公司 显示面板和显示装置
CN116741765A (zh) * 2023-08-10 2023-09-12 深圳市天成照明有限公司 一种mini显示LED驱动封装结构、封装工艺及显示屏

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