WO2019066491A1 - Module électroluminescent et dispositif d'affichage le comportant - Google Patents

Module électroluminescent et dispositif d'affichage le comportant Download PDF

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Publication number
WO2019066491A1
WO2019066491A1 PCT/KR2018/011425 KR2018011425W WO2019066491A1 WO 2019066491 A1 WO2019066491 A1 WO 2019066491A1 KR 2018011425 W KR2018011425 W KR 2018011425W WO 2019066491 A1 WO2019066491 A1 WO 2019066491A1
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WIPO (PCT)
Prior art keywords
light emitting
light
emitting cell
wavelength converter
wavelength
Prior art date
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PCT/KR2018/011425
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English (en)
Korean (ko)
Inventor
이정훈
손성수
이종익
임재희
타케야모토노부
홍승식
Original Assignee
서울반도체 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from KR1020180113679A external-priority patent/KR102650950B1/ko
Application filed by 서울반도체 주식회사 filed Critical 서울반도체 주식회사
Priority to BR112020005890-4A priority Critical patent/BR112020005890A2/pt
Priority to US16/646,537 priority patent/US11641008B2/en
Priority to CN201880037296.0A priority patent/CN110720144B/zh
Priority to JP2020515261A priority patent/JP7389021B2/ja
Priority to EP18861552.0A priority patent/EP3690944A4/fr
Publication of WO2019066491A1 publication Critical patent/WO2019066491A1/fr
Priority to US17/509,050 priority patent/US11824145B2/en
Priority to US18/503,590 priority patent/US20240079534A1/en
Priority to JP2023194352A priority patent/JP2024014952A/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention relates to a light emitting device and a display device having the same.
  • Light emitting diodes among light emitting devices are inorganic light sources, and they are widely used in various fields such as display devices, automotive lamps, and general lighting. Light emitting diodes are rapidly replacing existing light sources because they have a long lifetime, low power consumption, and fast response time.
  • a conventional light emitting diode has been mainly used as a backlight light source in a display device.
  • a micro LED has been developed as a next-generation display device that implements a direct image using a light emitting diode.
  • the display device generally uses various colors of blue, green, and red to realize various colors.
  • Each pixel of the display device has blue, green and red sub-pixels, and the color of the specific pixel is determined through the color of these sub-pixels, and the image is realized by the combination of these pixels.
  • a micro LED In the case of a micro LED display device, a micro LED is arranged corresponding to each sub-pixel, so that a large number of micro LEDs must be arranged on one substrate.
  • the size of the micro LED is very small, which is less than 200 micrometers and less than 100 micrometers, and this small size causes various problems. Particularly, it is difficult to handle a light emitting diode of a small size, so it is not easy to mount a light emitting diode on a panel, and it is also difficult to replace a defective LED among mounted micro LEDs with a good LED.
  • the light emitting diode generally emits ultraviolet light or blue light, and can realize green light and red light in combination with the phosphor.
  • a color filter is used for each sub-pixel. Accordingly, even when the same light emitting diode is operated and light of the same intensity is emitted, a difference in light intensity occurs between the blue sub-pixel, the green sub-pixel and the red sub-pixel. In order to overcome such a difference, it is possible to change the operating current density of each light emitting diode. However, the light emitting efficiency of the light emitting diode may be reduced according to the change of the current density.
  • a problem to be solved by the present invention is to provide a light emitting diode which is easy to mount and replace and a display device having the same.
  • Another object of the present invention is to provide a light emitting diode capable of operating light emitting diodes of each sub-pixel with optimal light emitting efficiency and a display device having the light emitting diode.
  • Another object of the present invention is to provide a display device having high color purity and high color reproducibility.
  • a light emitting device includes a first light emitting cell, a second light emitting cell, and a third light emitting cell including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, respectively; Pads electrically connected to the first through third light emitting cells to independently drive the first through third light emitting cells; A second wavelength converter for converting a wavelength of light emitted from the second light emitting cell; And a third wavelength converter for converting a wavelength of light emitted from the third light emitting cell, wherein the third wavelength converter converts the wavelength of light to a wavelength longer than that of the second wavelength converter,
  • the third light emitting cell has a larger area than the first light emitting cell, and the third light emitting cell has a larger area than the second light emitting cell.
  • the first to third light emitting cells emit blue light
  • the second wavelength converter converts the blue light into green light
  • the third wavelength converter converts the blue light into red light
  • the area ratio of the second light emitting cell and the third light emitting cell to the first light emitting cell is inversely proportional to the light conversion efficiency of the second wavelength converter and the light conversion efficiency of the third wavelength converter, can do.
  • the light emitting device further includes a first wavelength converter for converting the wavelength of the light emitted from the first light emitting cell into light of the first wavelength, wherein the first wavelength converter converts the second wavelength The wavelength of the light is changed to a shorter wavelength than the converter, and the first to third light emitting cells can emit ultraviolet rays.
  • the first wavelength converter converts ultraviolet light into blue light
  • the second wavelength converter converts the ultraviolet light into green light
  • the third wavelength converter converts the ultraviolet light into red light have.
  • the area ratio of the second light emitting cell and the third light emitting cell with respect to the first light emitting cell may be set such that the ratio of the light conversion efficiency of the second wavelength converter to the first wavelength converter, And may be inversely proportional to the light conversion efficiency ratio of the wavelength converter.
  • the light emitting device comprises: a first color filter disposed on the first wavelength converter; A second color filter disposed on the second wavelength converter; And a third color filter disposed on the third wavelength converter.
  • the light emitting device comprises a second color filter disposed on the second wavelength converter; And a third color filter disposed on the third wavelength converter.
  • the light emitting device may further include a substrate on which the first to third light emitting cells are disposed.
  • the first light emitting cell to the third light emitting cell may include a barrier provided between the first light emitting cell and the third light emitting cell, And the distance between the barrier ribs and the first light emitting cell to the third light emitting cell may be 10 ⁇ ⁇ to 20 ⁇ ⁇ .
  • the barrier ribs provided between the first light emitting cell and the third light emitting cell may be connected to each other.
  • the width of the partition wall may increase as the distance from the substrate increases.
  • the ratio of the area occupied by the barrier ribs to the area of the planar surface of the substrate may be 0.5 to 0.99.
  • the height of the barrier rib may be 15 to 115 ⁇ .
  • the first light emitting cell emits red light
  • the second light emitting cell emits green light
  • the third light emitting cell emits blue light
  • the first light emitting cell and the second light emitting cell The distance between the two light emitting cells may be the same as the distance between the first light emitting cell and the third light emitting cell. In an embodiment of the present invention, the distance between the first light emitting cell and the second light emitting cell may be different from the distance between the second light emitting cell and the third light emitting cell.
  • the first light emitting cell to the third light emitting cell are provided in one light emitting element, and the first light emitting cell to the third light emitting cell distance provided to one pixel is May be shorter than a distance between the first light emitting cell to the third light emitting cell provided for the provided first light emitting cell to the third light emitting cell and the pixel adjacent to the one pixel.
  • the first light emitting cell to the third light emitting cell may be arranged in a triangular shape, or the first light emitting cell to the third light emitting cell may be arranged in a straight line.
  • the first to third light emitting cells may share a first conductive type semiconductor layer.
  • the light emitting device may further include an extension extending from a pad electrically connected to the shared first conductive semiconductor layer among the pads.
  • the second wavelength converter and the third wavelength converter may be located in the same film.
  • the second wavelength converter and the third wavelength converter are located within the laminated film, and the second wavelength converter and the third wavelength converter may be located in different layers.
  • the light emitting device comprises a substrate; A first light emitting cell, a second light emitting cell, and a third light emitting cell provided on the substrate and emitting red light, green light, and blue light; Wherein each of the first to third light emitting cells has a height lower than a height of the barrier ribs, and the height of the first to third light emitting cells is lower than the height of the barrier ribs, The distance between the first light emitting cell and the third light emitting cell may be 5 ⁇ or less.
  • the light emitting device of the present invention may be employed in a display device, and the display device includes a circuit board and a plurality of pixels arranged on the circuit board, wherein each of the plurality of pixels includes a light emitting element Lt; / RTI >
  • a sub-pixel including first to third light emitting cells and emitting light of different colors can be disposed in one light emitting diode, thereby providing a light emitting diode that can be easily mounted and replaced . Further, by varying the areas of the first to third light emitting cells, the light emitting cells of each sub-pixel can be operated with the optimal light emitting efficiency.
  • a display device having high color purity and high color reproducibility is provided.
  • FIG. 1 is a plan view of a display device according to an embodiment of the present invention.
  • FIG. 2 is an enlarged plan view showing a portion P1 in Fig.
  • FIG. 3 is a structural view illustrating a display device according to an embodiment of the present invention.
  • 4A is a circuit diagram showing a sub-pixel, and is a circuit diagram showing an example of pixels constituting a passive display device.
  • 4B is a circuit diagram showing a sub-pixel, and is a circuit diagram showing an example of pixels constituting an active display device.
  • FIG. 5A is a plan view showing one pixel in the display device shown in FIG. 2.
  • FIG. 5A is a plan view showing one pixel in the display device shown in FIG. 2.
  • 5B is a cross-sectional view taken along line I-I 'of FIG. 5A.
  • FIG. 6 is a cross-sectional view illustrating a light emitting cell according to an embodiment of the present invention.
  • 7A and 7B are plan views illustrating pixels according to an embodiment of the present invention.
  • 8A to 8D are cross-sectional views illustrating a display device according to an embodiment of the present invention.
  • FIG. 9 is a schematic plan view illustrating a light emitting device according to an embodiment of the present invention.
  • FIG. 10 is a schematic cross-sectional view taken along section line A-A in Fig.
  • FIG. 11 is a schematic plan view illustrating a light emitting device according to another embodiment of the present invention.
  • FIG. 12 is a schematic cross-sectional view taken along the perforated line B-B in Fig.
  • FIG. 13 is a schematic plan view for explaining a pixel according to another embodiment of the present invention.
  • FIG. 14 is a schematic cross-sectional view taken along the perforated line C-C in Fig.
  • FIG. 15 is a schematic enlarged cross-sectional view taken along the perforated line D-D in Fig.
  • 16 is a schematic plan view for explaining a pixel according to another embodiment of the present invention.
  • FIG. 17 is a schematic cross-sectional view taken along the percutaneous line E-E in Fig.
  • FIG. 18 is a schematic cross-sectional view for explaining a pixel according to another embodiment of the present invention.
  • 19A and 19B are sectional views for explaining a film including a wavelength converter.
  • 20 is a schematic plan view for explaining a display device according to an embodiment of the present invention.
  • 21 is a perspective view showing a display device according to an embodiment of the present invention.
  • An embodiment of the present invention relates to a light emitting device that emits light and can be used as a light source in various devices, and in particular, can be employed in a display device to function as a pixel.
  • a display device will be described, and an embodiment of a light emitting element as a pixel employed in a display device will be described in sequence with reference to the drawings.
  • the light emitting device according to an embodiment of the present invention is not only used for a display device, but may be employed as a light source in other devices as needed.
  • FIG. 1 is a plan view of a display device according to an embodiment of the present invention
  • FIG. 2 is an enlarged plan view showing a portion P1 in FIG.
  • a display device 10 displays arbitrary time information, for example, text, video, photograph, two-dimensional or three-dimensional image, and the like.
  • the display device 10 may be provided in various shapes, including a closed polygon including sides of a straight line such as a rectangle, a circle including sides made of a curved line, an ellipse, etc., and straight and curved sides Semicircular, semi-elliptical, and other shapes.
  • the display device is provided in a rectangular shape.
  • the display device 10 has a plurality of pixels 100 for displaying an image.
  • Each of the pixels 100 is a minimum unit for displaying an image.
  • Each pixel 100 can emit white light and / or color light.
  • Each pixel 100 may include one sub-pixel that emits one color, but may include a plurality of different sub-pixels so that different colors may be combined to emit white light and / or color light.
  • Each pixel 100 may be embodied as a light emitting element.
  • the term light emitting element is used in substantially the same meaning as a pixel in consideration of the fact that it can be used to implement one pixel.
  • each pixel 100 may include a plurality of light emitting cells, or sub-pixels implemented with a plurality of light emitting cells and other components for converting light from the light emitting cells.
  • the plurality of light emitting cells may be implemented as first through third light emitting cells 111P, 113P, and 115P, for example.
  • each pixel may include a light emitting cell G for emitting green light, a light emitting cell R for emitting red light, and a light emitting cell B for emitting blue light
  • the third to fourth light emitting cells 111P, 113P and 115P may correspond to the light emitting cell G for emitting green light, the light emitting cell R for emitting red light, and the light emitting cell B for emitting blue light.
  • the light emitting cells that each pixel 100 can include are not limited thereto.
  • each pixel 100 may include a light emitting cell that emits cyan, magenta, yellow light, etc., and each pixel includes a green light emitting cell (G) emitting green light, a red light emitting red light A cell R, and a blue light emitting cell B for emitting blue light.
  • G green light emitting cell
  • the pixels 100 and / or the light emitting cells 111P, 113P, and 115P are arranged in a matrix form.
  • the pixels 100 and / or the light emitting cells 111P, 113P, and 115P are arranged in a matrix form, meaning that the pixels 100 and / or the light emitting cells 111P, But they are arranged in a row or column as a whole, but they may be arranged in a zigzag shape, and the detailed positions may be changed.
  • FIG. 3 is a structural view illustrating a display device according to an embodiment of the present invention.
  • a display device 10 includes a timing controller 350, a scan driver 310, a data driver 330, a wiring portion, and pixels.
  • the pixels include a plurality of light emitting cells 111P, 113P, and 115P, the light emitting cells 111P, 113P, and 115P are individually connected to the scan driver 310, the data driver 330, And the like.
  • the timing control unit 350 receives various control signals and image data necessary for driving the display device from outside (for example, a system for transmitting image data).
  • the timing controller 350 rearranges the received image data and transmits the image data to the data driver 330.
  • the timing controller 350 generates scan control signals and data control signals necessary for driving the scan driver 310 and the data driver 330 and supplies the generated scan control signals and data control signals to the scan driver 310 and the data driver 330.
  • the scan driver 310 receives a scan control signal from the timing controller 350 and generates a scan signal corresponding to the scan control signal.
  • the data driver 330 receives the data control signal and the image data from the timing controller 350 and generates a data signal corresponding thereto.
  • the wiring portion includes a plurality of signal wirings.
  • the wiring portion includes first wires 130, a data driver 330, and light emitting cells 111P, 113P, and 115P that connect the scan driver 310 and the light emitting cells 111P, 113P, and 115P And the second wirings 120 connecting the first wirings 120.
  • the first wirings 130 may be scan wirings
  • the second wirings 120 may be data wirings.
  • the first wirings are referred to as scan wirings, As data lines.
  • the wiring unit further includes wiring for connecting the timing control unit 350 and the scan driving unit 310, the timing control unit 350 and the data driving unit 330, or other components and transmitting the corresponding signals.
  • the scan lines 130 provide scan signals generated in the scan driver 310 to the light emitting cells 111P, 113P, and 115P.
  • the data signal generated in the data driver 330 is output to the data lines 120.
  • the data signal output to the data lines 120 is input to the light emitting cells 111P, 113P, and 115P of the horizontal pixel line selected by the scan signals.
  • the light emitting cells 111P, 113P, and 115P are connected to the scan lines 130 and the data lines 120, respectively.
  • the light emitting cells 111P, 113P, and 115P selectively emit light corresponding to a data signal input from the data lines 120 when a scan signal is supplied from the scan lines 130.
  • each of the light emitting cells 111P, 113P, and 115P emits light with a luminance corresponding to the input data signal.
  • the light emitting cells 111P, 113P, and 115P supplied with the data signals corresponding to the black luminance display black by non-emitting light during the corresponding frame period.
  • the sub-pixels i.e., the light emitting cells
  • the display device can be driven either passive or active.
  • the display device may be further supplied with the first and second sub-pixel power sources in addition to the scan signal and the data signal.
  • the sub-pixel may be one of sub-pixels, for example, a red sub-pixel, a green sub-pixel, and a blue sub-pixel, and the first light emitting cell 111P is shown in the present embodiment.
  • the first light emitting cell 111P includes a light source LD connected between the scan line 130 and the data line 120.
  • the light source LD may be a light emitting diode having first and second terminals.
  • the first and second terminals are respectively connected to a first electrode (e.g., an anode) and a second electrode (e.g., a cathode) in the light emitting cell.
  • the first terminal may be connected to the scan wiring 130
  • the second terminal may be connected to the data line 120, or vice versa.
  • the light source LD emits light with a luminance corresponding to the magnitude of the applied voltage when a voltage equal to or higher than the threshold voltage is applied between the first electrode and the second electrode. That is, the emission of the first light source 111P can be controlled by adjusting the voltage of the scan signal applied to the scan line 130 and / or the data signal applied to the data line 120.
  • the light source LD is connected between the scan line 130 and the data line 120, but the present invention is not limited thereto.
  • a plurality of light sources LD may be connected between the scan lines 130 and the data lines 120. In this case, the light sources LD may be connected in parallel or in series.
  • FIG. 4B is a circuit diagram showing the first light emitting cell 111P, and is a circuit diagram showing an example of sub-pixels constituting an active display device.
  • the first light emitting cell 111P may be further supplied with the first and second sub pixel power supplies ELVDD and ELVSS in addition to the scan signal and the data signal.
  • the first light emitting cell 111P includes at least one light source (LD) and a transistor portion (TFT) connected thereto.
  • LD light source
  • TFT transistor portion
  • the first electrode of the light source LD is connected to the first sub pixel power source ELVDD via the transistor portion TFT and the second electrode thereof is connected to the second sub pixel power source ELVSS.
  • the first sub pixel power supply ELVDD and the second sub pixel power supply ELVSS may have different potentials.
  • the second sub pixel power ELVSS may have a potential lower than the threshold voltage of the light emitting cell than the potential of the first sub pixel power ELVDD.
  • Each of these light sources emits light with a luminance corresponding to the driving current controlled by the transistor portion (TFT).
  • the transistor portion TFT includes first and second transistors M1 and M2 and a storage capacitor Cst.
  • the structure of the transistor portion (TFT) is not limited to the embodiment shown in Fig. 4B.
  • a source electrode of the first transistor M1 (switching transistor) is connected to the data line 120, and a drain electrode thereof is connected to the first node N1.
  • the gate electrode of the first transistor is connected to the scan wiring 130.
  • the first transistor is turned on when a scan signal of a voltage capable of turning on the first transistor M1 from the scan line 130 is supplied to the data line 120 and the first node N1, Respectively. At this time, the data signal of the frame is supplied to the data line 120, and the data signal is transmitted to the first node N1.
  • the data signal transferred to the first node N1 is charged in the storage capacitor Cst.
  • the source electrode of the second transistor M2 (driving transistor) is connected to the first sub pixel power source ELVDD, and the drain electrode is connected to the first electrode of the light emitting cell.
  • the gate electrode of the second transistor M2 is connected to the first node N1.
  • the second transistor M2 controls the amount of the driving current supplied to the light emitting cells corresponding to the voltage of the first node N1.
  • One electrode of the storage capacitor Cst is connected to the first sub-pixel power source ELVDD and the other electrode is connected to the first node N1.
  • the storage capacitor Cst charges the voltage corresponding to the data signal supplied to the first node N1 and maintains the charged voltage until the data signal of the next frame is supplied.
  • a transistor portion (TFT) including two transistors is shown in Fig. 4B.
  • the present invention is not limited thereto, and the structure of the transistor portion (TFT) can be variously modified.
  • the transistor portion may include more transistors, capacitors, and the like.
  • the specific structure of the first and second transistors, the storage capacitor, and the wirings is not shown in this embodiment, the first and second transistors, the storage capacitor, and the wirings Can be provided in various forms within the limit.
  • FIG. 5A is a plan view showing one pixel of the display device shown in FIG. 2, and FIG. 5B is a cross-sectional view taken along the line I-I 'of FIG. 5A.
  • barrier ribs 220 for transmitting light are provided between the first to third light emitting cells 111P, 113P, and 115P.
  • the height of the first to third light emitting cells 111P, 113P, and 115P is lower than the height of the barrier ribs 220.
  • the distance between the barrier ribs 220 and the first to third light emitting cells 111P, 113P, and 115P is 10 ⁇ ⁇ to 20 ⁇ ⁇ or less.
  • the first to third light emitting cells 111P, 113P, and 115P may be collectively referred to as 'light emitting cells' for the contents commonly applied to all light emitting cells.
  • the minimum unit in which the bundles of the first to third light emitting cells 111P, 113P, and 115P and the white light can be formed is referred to as a 'pixel' or a 'light emitting device'.
  • the substrate 210 may include a wiring portion to supply power and a signal to the pixel 100.
  • a wiring portion and / or a transistor portion including scan wirings and data wirings connected to the pixel 100 may be formed on the substrate 210.
  • the substrate 210 may be a printed circuit board.
  • a wiring part connected to the pixel 100 may be provided on the printed circuit board, and a circuit such as a timing control part, a scan driving part, and a data driving part may be mounted.
  • the wiring portion may include pad portions 235a and 235b provided on the upper surface of the printed circuit board so as to be electrically connected to the pixel 100, and a printed circuit board And connecting portions 235ba and 235bb that penetrate the upper and lower surfaces of the base portion 235b. Electrodes 231 and 232 or wirings may be mounted on the lower surface of the printed circuit board and wirings of the pixel 100 may be mounted on the lower surface of the printed circuit board through the pad portions 235a and 235b and the connecting portions 235ba and 235bb. The electrodes 231 and 232, the wiring, and the like.
  • the substrate 210 may be otherwise provided as the pixel 100 may be mounted in addition to the printed circuit board.
  • the substrate 210 may have a wiring portion formed on an insulating substrate such as glass, quartz, plastic, or the like.
  • the circuits such as the timing controller, the scan driver, and the data driver may be formed directly on the insulating substrate, or may be provided on a separate printed circuit board or the like, and then connected to the wiring portion of the insulating substrate.
  • the substrate 210 may be made of a rigid material, but is not limited thereto and may be made of a flexible material.
  • the display device according to an embodiment of the present invention is implemented as a display device capable of being bent or warped, it may be advantageous that the substrate 210 is made of a flexible material.
  • the substrate 210 when the substrate 210 is formed of a material such as glass, quartz, or the like, the substrate 210 has a relatively higher heat resistance than the organic polymer substrate. If the substrate 210 is made of a transparent material such as glass or quartz, it may be advantageous to manufacture a front or back light display device. In the case where the substrate 210 is made of an organic polymer or an inorganic composite material, the substrate 210 may be relatively flexible and may be advantageous for manufacturing a curved display device.
  • At least one pixel 100 is mounted on the substrate 210 with a conductive adhesive layer interposed therebetween.
  • the pixel 100 is mounted on the sub pixel area of the substrate 210.
  • the pixel 100 includes a first light emitting cell 111P, a second light emitting cell 113P, and a third light emitting cell 115P.
  • Each light emitting cell 111P, 113P, and 115P is provided on the substrate 210 in a planar spaced-apart form.
  • the first to third light emitting cells 111P, 113P, and 115P can emit light of different wavelength bands. That is, if the light emitted from the first through third light emitting cells 111P, 113P, and 115P is referred to as first through third lights, respectively, the first through third lights may have different wavelength bands. In this embodiment, as described above, the first to third light may have wavelength bands of green, red, and blue, respectively.
  • the first to third light emitting cells 111, 113, Green, red, and blue light emitting diodes are examples of light emitting diodes.
  • the first to third light emitting cells 111P, 113P, and 115P may emit light of the same wavelength.
  • the first light emitting cell 111P emits light of a first wavelength
  • the second light emitting cell 113P and the third light emitting cell 115P emit light of a second wavelength that is different from the first wavelength
  • the wavelength converter 250 may be provided on the second or third light emitting cells 113P and 115P.
  • the wavelength converter 250 may convert the wavelength of the light emitted from the light emitting cell.
  • the ultraviolet light or the blue wavelength band light emitted from the second light emitting cell 113P may be transmitted through the wavelength converter 250 and converted into the light of the red wavelength band.
  • the user can obtain light of different wavelengths from the light emitting cells 111P, 113P, Can be admitted as if it had been released.
  • Each of the light emitting cells 111P, 113P, and 115P is mounted on the pad portions 235a and 235b provided on the upper surface of the substrate 210.
  • a conductive adhesive layer may be provided between the light emitting cells 111P, 113P, and 115P and the pad portions 235a and 235b to secure a stable electrical connection.
  • the conductive adhesive layer may be composed of a conductive paste such as solder paste, silver paste or the like or a conductive resin.
  • the pad portions 235a and 235b may be connected to the electrodes 231 and 232 provided on the back surface of the substrate 210 by connecting portions 235ba and 235bb passing through the substrate 210.
  • the electrodes 231 and 232 may include a common electrode 231 and a sub-pixel electrode 232.
  • the first through third light emitting cells 111P, 113P, and 115P provided in the pixel 100 may be connected to one common electrode 231.
  • a plurality of sub-pixel electrodes 232 may be provided, and each sub-pixel electrode 232 may correspond one-to-one with the first through third light emitting cells 111P, 113P, and 115P.
  • the wiring structure can be simplified by connecting the light emitting cells 111P, 113P, and 115P provided in one pixel 100 to the same common electrode 231. In the display device manufacturing process The efficiency can be improved.
  • the common electrode 231 is connected to one common electrode 231 of the plurality of light emitting cells 111P, 113P and 115P, the size of the common electrode 231 may be relatively larger than that of the sub pixel electrode 232.
  • the common electrode 231 and the sub-pixel electrode 232 may be connected to the data line and the scan line of the display device. Accordingly, the scan signal and the data signal can be transmitted to the light emitting cells 111P, 113P, and 115P through the common electrode 231 and the sub pixel electrode 232, respectively.
  • the common electrode 231 and the sub-pixel electrode 232 may be electrodes of different types.
  • the common electrode 231 is a p-type electrode
  • the sub-pixel electrode 232 can be an n-type electrode and vice versa.
  • the size of the common electrode 231 and the sub pixel electrode 232 may be larger than the sizes of the first terminal and the second terminal of the light emitting cell.
  • a barrier rib 220 is provided on the substrate 210. At this time, the barrier ribs 220 are provided between the first to third light emitting cells 111P, 113P, and 115P.
  • the barrier ribs 220 may be provided integrally with each other or may be provided separately from each other.
  • the barrier ribs provided between the first and second light emitting cells 111P and 113P and the barrier ribs provided between the second and third light emitting cells 113P and 115P are connected to each other Or may be separate.
  • barrier ribs 220 provided between the respective light emitting cells 111P, 113P, and 115P are integrally connected to each other will be described as an example.
  • the barrier rib 220 provided integrally includes a plurality of openings 221, 222, and 223 for each pixel 100.
  • the barrier ribs 220 are provided in such a manner that the light emitting cells 111P, 113P, and 115P are provided in the openings 221, 222, and 223.
  • the barrier rib 220 is an insulating layer made of a non-conductive material, and is a layer that does not transmit light.
  • the barrier ribs 220 may be formed of a light absorbing material.
  • the barrier ribs 220 may be provided in black, and may be made of, for example, a light shielding material used for a display device or the like.
  • the barrier ribs 220 may be formed from a composition in which a photo solder resist (PSR) and a light absorbing material are mixed.
  • PSR photo solder resist
  • the process of forming the barrier ribs 220 can be simplified. Specifically, by applying the composition at room temperature and photo-curing it, barrier ribs 220 can be formed without severe process conditions.
  • the photosensitive solder resist may comprise a photosensitive organic polymer.
  • Photosensitive organic polymers may be selected from the group consisting of polyethylene, polypropylene, polyvinylchloride, polystyrene, acrylonitrile-butadiene-styrene resin, methacrylate resin, polyamide ), Polycarbonate, Polyacetyl, Polyethylene terephthalate, Modified Polyphenylene Oxide, Polybutylen terephthalate, Polyurethane, Phenolic resin Phenolic resin, urea resin, melamine resin, and combinations thereof.
  • a photosensitive hardening agent may be further included in the composition for forming the barrier ribs 220 to assist the photo-curing reaction of the photosensitive solder resist (PSR).
  • the barrier ribs 220 may be formed using various materials in addition to the above-described materials.
  • the composition for forming the barrier rib 220 may be a mixture of polydimethylsiloxane (PDMS) and carbon particles.
  • the barrier rib 220 includes a light absorbing material and can absorb a part of the light emitted from the light emitting cells 111P, 113P, and 115P. Particularly, a part of the light emitted from the light emitting cells 111P, 113P, and 115P toward the adjacent light emitting cells 111P, 113P, and 115P can be absorbed by the barrier ribs 220.
  • light emitted from the different light emitting cells 111P, 113P, and 115P can be prevented from unnecessarily mixing colors. In addition, since unnecessary color mixing of light is prevented, the color combination of the visible light is the same even when the display device is viewed in any direction.
  • preventing unnecessary color mixing of light by the barrier rib 220 does not mean completely blocking color mixing of a plurality of lights emitted from one pixel 100.
  • one pixel 100 includes a plurality of light emitting cells 111P, 113P, and 115P and red light, blue light, and green light are emitted from each light emitting cell, the red light, the blue light, and the green light are mixed, .
  • the barrier ribs 220 prevent the white light from being visually recognized as a different color when the display device is viewed in a direction not perpendicular to the display device by mixing light with light from pixels unnecessarily adjacent to the display device.
  • the height of the barrier ribs 220 is greater than the height of the light emitting cells 111P, 113P, and 115P.
  • H2 is greater than the first height H1.
  • the first height H1 is a distance from the upper surface of the substrate 210 to the upper surface of the light emitting cells 111P, 113P, and 115P.
  • the first height H1 is a distance from the upper surface of the substrate 210 to the concave and convex ends of the upper surface of the light emitting cells 111P, 113P, and 115P, when concaves and convexes are provided on the upper surfaces of the light emitting cells 111P, It can be distance.
  • the second height H2 means a distance from the surface where the substrate 210 is in contact with the barrier rib 220 to the top surface of the barrier rib 220.
  • the second height H2 may be an average distance from the surface of the substrate 210 contacting the barrier 220 to the top surface of the barrier 220 when the thickness of the barrier 220 varies depending on the planar position .
  • the second height H2 may be from about 15 [mu] m to about 115 [mu] m.
  • the above numerical range is the height of the barrier rib 220 for preventing light emitted from the first to third light emitting cells 111P, 113P, and 115P from being unnecessarily mixed.
  • the second height H2 exceeds about 115 mu m, the amount of light emitted from the light emitting cells 111P, 113P, and 115P may be excessively reduced, or the thickness of the entire display device may become excessively large.
  • the second height H2 is less than about 15 mu m, unnecessary color mixing may occur between the light emitted from the light emitting cells 111P, 113P, and 115P.
  • the first height H1 may be different for each of the light emitting cells 111P, 113P, and 115P.
  • the second height H2 is larger than the first height H1
  • the second height H2 is larger than the first height H1 of certain light emitting cells 111P, 113P, and 115P.
  • the difference between the second height H2 and the first height H1 may be greater than 0 and less than or equal to about 100 ⁇ . If the difference between the second height H2 and the first height H1 is greater than about 100 mu m, mixing of light emitted from one pixel 100 is blocked and white light can be difficult to implement.
  • the first height H1 may be about 1 to about 20 microns. Accordingly, the thickness or the second height H2 of the barrier ribs 220 can be relatively small, and the thickness of the entire display device can be reduced.
  • the widths of the openings 221, 222 and 223 provided with the light emitting cells 111P, 113P and 115P may vary according to the light emitting cells 111P, 113P and 115P.
  • the sizes of the openings 221, 222, and 223 may be varied depending on sizes of the light emitting cells 111P, 113P, and 115P.
  • the widths of the openings 221, 222, and 223 are larger than the widths of the light emitting cells 111P, 113P, and 115P.
  • the light emitting cells 111P, 113P and 115P are arranged so as not to contact the side walls of the partition 220 forming the openings 221, 222 and 223 and the light emitting cells 111P, 113P and 115P.
  • the distance between the light emitting cells 111P, 113P, and 115P and the sidewalls of the openings 221, 222, and 223 may be about 10 mu m to about 20 mu m.
  • the numerical range is set so that the ratio of the area opened by the openings 221, 222, and 223 can be reduced while preventing the partition 220 from unnecessarily mixing light emitted from the light emitting cells 111P, 113P, and 115P have.
  • the area occupied by the barrier ribs 220 among the planar area of the display device may be about 50% to about 99% of the total area. As the area occupied by the barrier ribs 220 becomes relatively large, the contrast ratio of the display device can be improved.
  • the width of the light emitting cells 111P, 113P, and 115P may be 200 mu m or less.
  • the length of one side of the square may be about 200 mu m or less.
  • the light emitting cells 111P, 113P, and 115P have the sizes described above, it is possible to mount more light emitting cells 111P, 113P, and 115P in the same area. Thus, the resolution of the display device can be improved.
  • a wavelength converter 250 may further be provided on the light emitting cells 111P, 113P, and 115P.
  • the wavelength converter 250 may be provided only on some of the light emitting cells 111P, 113P, and 115P.
  • the wavelength converter 250 may be provided only on the second light emitting cell 113P.
  • the wavelength converter 250 provided in the second light emitting cell 113P converts the wavelength band of the light emitted from the second light emitting cell 113P.
  • the light after passing through the wavelength converter 250 can be viewed with a color different from that when the light is emitted from the second light emitting cell 113P.
  • the wavelength of the light after passing through the wavelength converter 250 may be different from the wavelength of the light emitted from the first light emitting cell 111P or the third light emitting cell 115P, to which the wavelength converter 250 is not provided.
  • the wavelength converter 250 can emit light having a wavelength longer than the wavelength of the absorbed light, in particular, after absorbing light having a relatively short wavelength.
  • the light emitted from the second light emitting cell 113P may be blue light, green light, ultraviolet light, or the like.
  • the blue light, the green light, or the ultraviolet light is converted into the red light by the wavelength converter 250.
  • the wavelength converter 250 may include a phosphor layer 251 and a color filter 252. Both the phosphor layer 251 and the color filter 252 function to convert the wavelength of the received light into a specific wavelength band.
  • the phosphor layer 251 and the color filter 252 may exhibit a difference in the wavelength band width of the light that is converted and emitted.
  • the color filter 252 may include a quantum dot material and convert the received light into light of a relatively narrow bandwidth. In comparison, the phosphor layer 251 can convert received light into light having a relatively wide bandwidth.
  • a red color filter 143 may further be provided.
  • the color filter 143 may be omitted and a higher purity color may be realized when the color filter 143 is provided.
  • the phosphor layer 251 may be provided in the form of filling the inside of the opening 222. Accordingly, the light emitted from the light emitting cell 113P can pass through the phosphor layer 251 before being visible to the user's eyes.
  • the phosphor layer 251 may be provided in a mixed form with PDMS (polydimethylsiloxane), PI (polyimide) or PMMA (poly (methyl 2-methylpropenoate)) together with a transparent or semitransparent binder such as ceramic.
  • PDMS polydimethylsiloxane
  • PI polyimide
  • PMMA poly (methyl 2-methylpropenoate)
  • the color filter 252 may be provided in a form separated from the light emitting cell 113P.
  • the width of the color filter 252 may be greater than the width of the opening 222. [ Accordingly, a part of the color filter layer 252 can overlap with the barrier rib 220 in a plane. As the color filter layer 252 has the above-described shape, the light emitted from the light emitting cell 113P can be prevented from being visible to the user without passing through the color filter 252, and at the same time, the structural stability can be improved.
  • the color filter 252 can increase the color purity of light. Specifically, the color filter 252 can block blue light or ultraviolet light that has not been completely converted by the phosphor layer 251. In addition, by blocking the light from the adjacent first and third light emitting cells 111P and 115P, the light emitted from the second light emitting cell 113P is prevented from mixing. Accordingly, according to an embodiment of the present invention, since the phosphor layer 251 and the color filter 252 are provided in the wavelength converter 250, the color purity can be further improved.
  • a protective layer 240 may be provided on the light emitting cells 111P and 115P and the barrier ribs 220.
  • the protective layer 240 fills the openings 221 and 223 in which the wavelength converter 250 is not provided and is provided in a form covering the surface of the barrier ribs 220.
  • the protective layer 240 is optically transparent. Accordingly, the light emitted from the light emitting cells 111P and 115P or emitted through the wavelength converter 250 can be maintained in optical characteristics even though the light passes through the protective layer 240.
  • the protective layer 240 may be formed of an optically transparent material.
  • the protective layer 240 may be formed of epoxy, polysiloxane, photoresist, or the like.
  • the polysiloxane material may be PDMS (polydimethylsiloxane).
  • the material of the protective layer 240 is not limited to the HSSQ (Hydrogen Silsesquioxane), MSSQ (Methyksilsesquioxane), polyimide, divinyl siloxane, DVS-BCS (Bis- Benzocyclobutane), PFCB (Perfluorocyclobutane ), PAE (Polyarylene Ether), or the like may be used.
  • the thickness of the protective layer 240 may be determined in consideration of the thickness of the entire display device of the substrate 210.
  • the protective layer 240 may be provided so that the distance from the back surface of the substrate 210 to the upper surface of the protective layer 240 is about 1 mm or less.
  • FIG. 6 is a cross-sectional view illustrating a light emitting cell according to an embodiment of the present invention.
  • the first to third light emitting cells 111P, 113P, and 115P include flip chip type light emitting diodes
  • FIG. 6 is a cross-sectional view schematically illustrating a flip chip type light emitting cell according to an embodiment of the present invention. 6 may be any one of the first through third light emitting cells 111P, 113P, and 115P. In this embodiment, the first light emitting cells 111P will be described as an example. In the following description, Emitting cell 111, as shown in FIG.
  • the light emitting cell 111 includes a first conductive semiconductor layer 1110, an active layer 1112, a second conductive semiconductor layer 1114, a first contact layer 1116, a second contact layer 1116, 1118, an insulating layer 1120, a first terminal 1122, and a second terminal 1124.
  • the first conductive semiconductor layer 1110, the active layer 1112, and the second conductive semiconductor layer 1114 may be collectively referred to as a semiconductor layer.
  • the type of the semiconductor layer may vary depending on the wavelength of light emitted from the light emitting cells.
  • the semiconductor layer indium gallium nitride (InGaN), gallium nitride (GaN), gallium phosphide (GaP), aluminum gallium indium phosphide (AlGaInP), and aluminum gallium phosphide AlGaP).
  • the semiconductor layer may include at least one of aluminum gallium arsenide (AlGaAs), gallium arsenide phosphide (GaAsP), aluminum gallium indium phosphide (AlGaInP ), And gallium phosphide (GaP).
  • AlGaAs aluminum gallium arsenide
  • GaAsP gallium arsenide phosphide
  • AlGaInP aluminum gallium indium phosphide
  • GaP gallium phosphide
  • the semiconductor layer may comprise gallium nitride (GaN), indium gallium nitride (InGaN), and zinc selenide (ZnSe).
  • the first conductivity type semiconductor layer 1110 and the second conductivity type semiconductor layer 1114 have opposite polarities.
  • the first conductivity type is n-type
  • the second conductivity type is p
  • the second conductivity type is n-type
  • the first semiconductor layer 1110 may be an n-type semiconductor layer 1110 and the second semiconductor layer 1114 may be a p-type semiconductor layer 1114 in an embodiment of the present invention.
  • an example in which the n-type semiconductor layer 1110, the active layer 1112, and the p-type semiconductor layer 1114 are sequentially formed will be described as an example.
  • the n-type semiconductor layer 1110, the active layer 1112 and the p-type semiconductor layer 1114 may be formed of a III-V nitride semiconductor, for example, a nitride semiconductor such as (Al, Ga, In) have.
  • the n-type semiconductor layer 1110, the active layer 1112, and the p-type semiconductor layer 1114 can be formed using a known method such as metalorganic chemical vapor deposition (MOCVD).
  • the p-type semiconductor layer 1114 includes a p-type impurity (for example, Mg, Sr, Ba) and an n-type semiconductor layer 1110.
  • the n-type semiconductor layer 1110 includes n-type impurities (e.g., Si, Ge, .
  • the n-type semiconductor layer 1110 may comprise GaN or AlGaN containing Si as a dopant and the p-type semiconductor layer 1114 may comprise GaN or AlGaN containing Mg as a dopant .
  • n-type semiconductor layer 1110 and the p-type semiconductor layer 1114 are shown as a single layer in the drawing, these layers may be multilayered and may also include a superlattice layer.
  • the active layer 1112 may include a single quantum well structure or a multiple quantum well structure, and the composition ratio of the nitride-based semiconductor is adjusted so as to emit a desired wavelength. For example, the active layer 1112 may emit blue light or ultraviolet light.
  • a first contact layer 1116 is disposed on the first conductivity type semiconductor layer 1110 where the active layer 1112 and the second conductivity type semiconductor layer 1114 are not provided and on the second conductivity type semiconductor layer 1114, 2 contact layer 1118 is disposed.
  • the first and / or second contact layers 1116 and 1118 may be comprised of a single layer, or a multilayer metal.
  • metals such as Al, Ti, Cr, Ni, and Au and alloys thereof may be used.
  • An insulating layer 1120 is provided on the first and second contact layers 1116 and 1118 and a first terminal 1122 is connected to the first contact layer 1116 through a contact hole on the insulating layer 1120, 2 contact layer 1118 and a second terminal 1124 connected through a contact hole.
  • the first terminal 1122 is connected to one of the first connection electrode 121 and the second connection electrode 123 via the second conductive adhesive layer 163 and the second terminal 1124 is connected to the second conductive adhesive layer 163 To the other one of the first connection electrode 121 and the second connection electrode 123 through the first connection electrode 121 and the second connection electrode 123, respectively.
  • the first and / or second terminals 1122 and 1124 may be comprised of a single layer, or a multilayer metal.
  • metals such as Al, Ti, Cr, Ni, and Au and alloys thereof may be used.
  • the light emitting cell is described with reference to the drawings simply, but the light emitting cell may further include a layer having an additional function in addition to the above-described layer.
  • a reflective layer that reflects light
  • an additional insulating layer to isolate certain components
  • a solder barrier that prevents diffusion of the solder, and the like.
  • the surface of the first conductivity type semiconductor layer 1110 or the n-type semiconductor layer 1110 may include irregularities. That is, irregularities may be included in a surface of the light emitting cell 111 on which light is emitted. By providing the unevenness, the light extraction efficiency can be improved.
  • the concavities and convexities may be provided in various forms such as a polygonal pyramid, a hemisphere, and a surface having a roughness, which are randomly arranged.
  • the first and second contact layers 1116 and 1118 and the first and second terminals 1122 and 1122 may be formed in various shapes in forming the flip chip type light emitting cell 111.
  • 1124 may also be varied in various ways.
  • the light emitting cell 111 may be a vertical or vertical light emitting cell.
  • the first conductivity type semiconductor layer 1110, the active layer 1112 and the second conductivity type semiconductor layer 1114 may be sequentially stacked even when the light emitting cell 111 is a vertical light emitting cell.
  • matters relating to the first conductivity type semiconductor layer 1110, the active layer 1112, and the second conductivity type semiconductor layer 1114 are as described in the description of the flip chip type light emitting cell 111.
  • 7A and 7B are plan views illustrating pixels according to an embodiment of the present invention.
  • the light impervious layer comprises a plurality of openings, each of which is provided with one light emitting cell.
  • the distance between the light emitting cells provided in the same pixel is shorter than the distance between the light emitting cells provided in the different light emitting cell pixels.
  • the distance between the light emitting cell and the opening sidewall is relatively smaller than the distance between the openings.
  • the distance between the different openings will be described.
  • the description about the inter-aperture distance may be applied equally to the distance between the light emitting cells.
  • the distance between the light non-transmissive layer side wall and the light emitting cell can be narrowed to 2 ⁇ or less, because it is a relatively short distance.
  • Each of the pixels 110, 110 ', 110 " is provided with first to third light emitting cells.
  • the first light emitting cell emits light of a first wavelength
  • the second light emitting cell emits light of a second wavelength different from the first wavelength
  • the third light emitting cell emits light of a third wavelength different from the first wavelength.
  • the second wavelength and the third wavelength may be the same depending on the case, and in this case, a wavelength converter is provided on at least one of the second light emitting cell or the third light emitting cell.
  • the first light emitting cells 221, 221 ', 221' ', and the second light emitting cells are formed in the first pixel 100, the second pixel 110' 222, 222 ', 222 "and third light emitting cells 223, 223, 223" may be provided and each pixel 110, 110', 110 " have.
  • the shortest distance between each of the openings 221, 222, and 223 located in the first pixel 100 is the shortest distance among the openings located in the pixels 110 'and 110 " Is shorter than the shortest distance to the adjacent opening.
  • the second distance D2 and the fourth distance D4 are smaller than the first distance D1 and the third distance D3.
  • the second distance D2 is a distance between the first opening 221 and the third opening 223 and the fourth distance D4 is a distance between the second opening 222 and the third opening 223 It says.
  • the first distance D1 is a distance between the third opening 223 of the first pixel 100 and the second opening 222 'of the second pixel 110'
  • the third distance D3 is a distance Refers to the distance between the third opening 223 of the first pixel 100 and the first opening 221 " of the third pixel 110 ".
  • the display device according to the present invention can emit high-purity white light, but does not have a problem in that the color varies depending on the viewing angle of the display device.
  • the first light emitting cells 221, 221 ', 221' ', and the second light emitting cells are formed in the first pixel 100, the second pixel 110' 222, 222 ', 222 "and third light emitting cells 223, 223, 223" are arranged.
  • the first light emitting cell to the third light emitting cell in each pixel 110, 110 ', 110 " are sequentially arranged along one direction, and the distance between the first light emitting cell and the second light emitting cell And the distance between the second light emitting cell and the third light emitting cell is smaller than the inter pixel distance.
  • the light emitting cells 223, 223, and 223 " may be arranged in a sequential manner.
  • the second distance D2 and the fourth distance D4 are smaller than the first distance D1 and the third distance D3.
  • the second distance D2 is the distance between the first opening 221 'and the second opening 222' of the second pixel 110 'and the fourth distance is the distance between the second opening 110' Refers to the distance between the second opening 222 'and the third opening 223'.
  • the first distance D1 is a distance between the second opening 222 of the first pixel 100 and the second opening 222 'of the second pixel 110'
  • the third distance D3 is a distance Refers to the distance between the second opening 222 'of the second pixel 110' and the second opening 222 '' of the third pixel 110 ".
  • the distance from the sidewall of the light non-permeable layer forming the opening to the light emitting cell is relatively smaller than the distance between the openings, the distance between the open apertures can be equally applied to the distance between the light emitting cells.
  • the display device according to the present invention can emit high-purity white light, but does not have a problem in that the color varies depending on the viewing angle of the display device.
  • the light emitting cell distance provided in the same pixel may vary depending on the type of light emitted from the light emitting cell.
  • the first light emitting cell when the first light emitting cell emits red light, the second light emitting cell emits green light, and the third light emitting cell emits blue light, the following distance relationship is established between the first light emitting cell and the third light emitting cell can do.
  • the distance between the first light emitting cell and the second light emitting cell may be the same as the distance between the first light emitting cell and the third light emitting cell.
  • the distance between the first light emitting cell and the second light emitting cell may be different from the distance between the second light emitting cell and the third light emitting cell.
  • the above-described distance relationship considers the characteristic of each light emitting cell that emits light of a different wavelength.
  • a display device having the above-described structure may be implemented in various forms within a scope not departing from the concept of the present invention.
  • 8A to 8D are cross-sectional views illustrating a display device according to an embodiment of the present invention.
  • a reflective layer 224 may be provided in the openings 221, 222, and 223.
  • the reflective layer 224 is provided in a form covering the sidewall of the partition wall 220 forming the opening 223.
  • the reflective layer 224 may be provided to cover a part of the substrate 210.
  • the reflective layer 224 and the light emitting cell 115P do not contact each other even when a part of the substrate 210 of the reflective layer 224 is covered in the embodiment of the present invention.
  • the distance between the sidewalls of each of the light emitting cells and the openings provided in the same pixel may be less than about 5 ⁇ ⁇ . In this case, since the reflection layer 224 reflects light, there is no fear that the light emitted from the light-emitting cells will pass through the barrier ribs 220.
  • the reflective layer 224 may include metals such as silver (Ag), aluminum (Al), copper (Cu), platinum (Pt), and gold (Au)
  • the thickness of the reflective layer 224 is relatively thin.
  • the reflective layer 224 may be formed using a variety of patterning methods after a thin film is formed using chemical vapor deposition (CVD), plasma chemical vapor deposition (PECVD), physical vapor deposition (PVD), atomic layer deposition (ALD) .
  • CVD chemical vapor deposition
  • PECVD plasma chemical vapor deposition
  • PVD physical vapor deposition
  • ALD atomic layer deposition
  • a light shield 260 and a diffusion plate 270 may be further provided on the protective layer 240.
  • the light shielding portion 260 can be provided so as not to overlap with the openings 221, 222 and 223 in the plan view and does not affect the total amount of light emitted from the light emitting cells 111P, 113P and 115P.
  • the light shielding portion 260 may be formed of a black light sensitive resist. When the light shielding portion 260 is made of a black light sensitive resist, patterning using photolithography is easy.
  • the material of the light-shielding portion 260 is not limited thereto and may be composed of various materials.
  • the light shielding portion 260 is provided to be spaced apart from the barrier ribs 220 to prevent unnecessary mixing of light emitted from the light emitting cells together with the barrier ribs 220.
  • the diffusion plate 270 refracts and diffuses the light emitted from the light emitting cells.
  • the viewing angle of the light emitted from the light emitting cells can be larger.
  • the diffusion plate 270 may be formed of one or more materials selected from the group consisting of HSSQ (Hydrogen Silsesquioxane), MSSQ (Methyksilsesquioxane), polyimide, divinyl siloxane, DVS-BCS (bis-Benzocyclobutane), PFCB (Perfluorocyclobutane) Polymethylmethacrylate (PDMS), and Polydimethylsiloxane (PDMS).
  • the openings 221, 222, and 223 have a shape that increases in width as the distance from the substrate 210 increases.
  • the lower width W2 of the opening 221 may be smaller than the upper width W1 of the opening 221.
  • the partition 220 provided between the openings 221, 222, and 223 may have a trapezoidal shape in which the cross section is inverted.
  • the width of the barrier rib 220 may increase as the distance from the substrate 210 increases.
  • the openings 221, 222, and 223 have the above-described shapes, it is possible to prevent unwanted color mixing of light emitted from the light emitting cells 111P, 113P, and 115P and to secure a wider viewing angle.
  • a window layer 280 is further provided on the diffusion plate 270.
  • the window layer 280 may comprise glass, acrylic, or the like, and is optically transparent.
  • the window layer 280 does not affect the optical properties of the light emitted from the light emitting cells.
  • the window layer 280 may have flexibility.
  • the window layer 280 can function as a support while protecting the light emitting cells and the like. Particularly, the barrier ribs 220 can be supported on the window layer 280.
  • the first to third light emitting cells 111P, 113P, and 115P are supported on the window layer 280.
  • a plurality of light emitting cells may be supported on the window layer 280.
  • One to 100 light emitting cells may be supported on one window layer 280.
  • wavelength converters 250, 250 'and 250' ' are provided on the first to third light emitting cells 111P, 113P and 115P.
  • the first to third light emitting cells 111P, 113P, and 115P can emit light having the same wavelength.
  • the semiconductor layers of the first to third light emitting cells 111P, 113P, and 115P may include aluminum gallium indium nitride (AlGaInN).
  • wavelength converters 250, 250 ', and 250' ' are provided on the respective light emitting cells. These wavelength converters 250, 250 ', 250' 'receive the light emitted from the light emitting cells and convert them into different wavelengths. Accordingly, red light, blue light, and green light can be emitted from one pixel.
  • the first to third light emitting cells may be configured in various forms to facilitate mounting and replacement and to operate with optimal light emitting efficiency.
  • terms such as " first ", " second ", " third ", and the like can be given to components other than those in the above-
  • FIG. 9 is a schematic plan view for explaining a pixel 100 according to an embodiment of the present invention
  • FIG. 10 is a schematic cross-sectional view taken along a perforated line A-A in FIG.
  • a pixel 100 that is, a light emitting device includes a substrate 21, a first light emitting cell 30a, a second light emitting cell 30b, a third light emitting cell 30c, a transparent electrode layer A first wavelength converter 51a, a second wavelength converter 51b, a third wavelength converter 51c, a first color filter 53a, a second color filter 53b, A third color filter 53c, and a barrier 55 (or barrier).
  • the first to third light emitting cells 30a, 30b and 30c include a first conductive semiconductor layer 23, an active layer 25 and a second conductive semiconductor layer 27, respectively.
  • the pixel 100 includes the sub-pixels 10B, 10G and 10R and the sub-pixels 10B, 10G and 10R are connected to the light emitting cells 30a, 30b and 30c, the wavelength converters 51a and 51b , 51c, and color filters 53a, 53b, 53c.
  • the substrate 21 is not particularly limited as long as it is a substrate capable of growing a gallium nitride-based semiconductor layer.
  • the substrate 21 include a sapphire substrate, a gallium nitride substrate, a SiC substrate, and the like, and may be a patterned sapphire substrate.
  • the substrate 21 may have a rectangular or square shape as shown in the plan view of FIG. 9, but is not limited thereto.
  • the size of the substrate 21 can be determined according to the required pixel size. For example, the length of the long side of the substrate 21 may be 400um or less, and may be 100um or less.
  • the first to third light emitting cells 30a, 30b, and 30c are spaced apart from each other. As shown in FIG. 9, the first to third light emitting cells 30a, 30b, and 30c have different areas.
  • the second light emitting cell 30b has a larger area than the first light emitting cell 30a and the third light emitting cell 30c has a larger area than the second light emitting cell 30b.
  • the areas of the first to third light emitting cells 30a, 30b and 30c can be determined in consideration of the light conversion efficiency of the wavelength converters 51a, 51b and 51c, which will be described later.
  • the first to third light emitting cells 30a, 30b, and 30c may be disposed adjacent to each other. That is, the first light emitting cell 30a is adjacent to the second and third light emitting cells 30b and 30c, the second light emitting cell 30b is adjacent to the first and third light emitting cells 30a and 30c, The third light emitting cell 30c may be adjacent to the first light emitting cell 30a and the second light emitting cell 30b. As shown in FIG. 9, the first and second light emitting cells 30a and 30b may be arranged along the long axis of the third light emitting cell 30c. However, the present invention is not limited thereto, and may be variously arranged in other forms. For example, one light emitting cell may be disposed between two different light emitting cells. Also, the first to third light emitting cells 30a, 30b, and 30c may have a rectangular shape, but are not limited thereto and may have various shapes.
  • the first to third light emitting cells 30a, 30b and 30c include a first conductive semiconductor layer 23, an active layer 25 and a second conductive semiconductor layer 27, respectively.
  • the first conductive type semiconductor layer 23 is disposed on the substrate 21.
  • the first conductivity type semiconductor layer 23 may be a layer grown on the substrate 21 and may be a gallium nitride based semiconductor layer doped with an impurity such as Si.
  • the active layer 25 and the second conductivity type semiconductor layer 27 are disposed on the first conductivity type semiconductor layer 23.
  • the active layer 25 is disposed between the first conductivity type semiconductor layer 23 and the second conductivity type semiconductor layer 27.
  • the active layer 25 and the second conductivity type semiconductor layer 27 may have a smaller area than the first conductivity type semiconductor layer 23.
  • the active layer 25 and the second conductivity type semiconductor layer 27 may be partially removed and a portion of the first conductivity type semiconductor layer 23 may be exposed.
  • the active layer 25 may have a single quantum well structure or a multiple quantum well structure.
  • the composition and thickness of the well layer in the active layer 25 determine the wavelength of the generated light.
  • by controlling the composition of the well layer it is possible to provide an active layer that generates ultraviolet light or blue light.
  • the active layers 25 of the first, second and third light emitting cells 30a, 30b and 30c are grown on the same substrate 21 under the same conditions, And thus, emits light of the same wavelength.
  • the second conductivity type semiconductor layer 27 may be a p-type impurity, for example, a gallium nitride based semiconductor layer doped with Mg.
  • the first conductive semiconductor layer 23 and the second conductive semiconductor layer 27 may each be a single layer, the present invention is not limited thereto, and may be a multiple layer or a superlattice layer.
  • the first conductivity type semiconductor layer 23, the active layer 25 and the second conductivity type semiconductor layer 27 are formed by a known method such as metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) And may be formed on the substrate 21 by growing.
  • MOCVD metal organic chemical vapor deposition
  • MBE molecular beam epitaxy
  • the transparent electrode layer 31 is disposed on the second conductivity type semiconductor layer 27 and is in ohmic contact with the second conductivity type semiconductor layer 27.
  • the transparent electrode layer 31 may include, for example, Ni / Au, ITO, or ZnO.
  • the first pad 33a and the second pad 33b are disposed on the first through third light emitting cells 30a, 30b, and 30c, respectively.
  • the first pads 33a and the second pads 33b may be disposed near the edge of the substrate 21 as shown in Fig. 9, so that when mounted on a circuit board or the like, easy to do.
  • the first pad 33a is electrically connected to the first conductivity type semiconductor layer 23 and the first pad 33b is electrically connected to the second conductivity type semiconductor layer 27.
  • the first pad 33a may be disposed on the first conductive semiconductor layer 23 exposed by partially removing the second conductive semiconductor layer 27 and the active layer 25 and may be disposed on the second pad 33b, May be disposed on the transparent electrode layer 31.
  • the first wavelength converter 51a is disposed on the first light emitting cell 30a and the second wavelength converter 51b is disposed on the second light emitting cell 30b and the third wavelength converter 51c is disposed on the third Emitting cell 30c.
  • the first to third wavelength converters 51a, 51b, and 51c may be positioned on the transparent electrode layer 31, respectively.
  • the first wavelength converter 51a converts the wavelength of the light emitted from the first light emitting cell 30a and the second wavelength converter 51b converts the wavelength of the light emitted from the second light emitting cell 30b,
  • the converter 51c converts the wavelength of the light emitted from the third light emitting cell 30c.
  • the second wavelength converter 51b converts light to a wavelength longer than that of the first wavelength converter 51a
  • the third wavelength converter 51c converts light to a wavelength longer than that of the second wavelength converter 51b.
  • the first to third light emitting cells 30a, 30b, and 30c may emit ultraviolet rays
  • the first wavelength converter 51a converts ultraviolet light into blue light
  • the second wavelength converter 51b The ultraviolet light is converted into green light
  • the third wavelength converter 51c is capable of converting ultraviolet light into red light.
  • the first color filter 53a, the second color filter 53b and the third color filter 53c are disposed on the first to third wavelength converters 51a, 51b and 51c, respectively, And filters the light.
  • the first color filter 53a filters light other than blue light
  • the second color filter 53b filters light other than green light
  • the third color filter 53c filters light other than red light do.
  • the active layer 25 emits ultraviolet rays.
  • the active layer 25 may emit blue light.
  • the first wavelength converter 51a may be omitted, and a transparent resin may be disposed instead of the first wavelength converter 51a.
  • the second wavelength converter 51b converts blue light into green light
  • the third wavelength converter 51c converts blue light into red light.
  • the barrier ribs 55 are disposed between the first to third light emitting cells 30a, 30b, and 30c.
  • the barrier 55 may also surround each light emitting cell.
  • the barrier ribs 55 may also be disposed between the wavelength converters 51a, 51b and 51c.
  • the barrier ribs 55 prevent the light emitted from one light emitting cell from progressing toward the other light emitting cell to prevent optical interference between the sub pixels 10B, 10G and 10R.
  • the barrier ribs 55 may fill an area between the light emitting cells, but are not limited thereto.
  • the barrier ribs 55 may be formed of a white resin or a photosensitive solder resist capable of reflecting light.
  • the pixel of this embodiment has three sub-pixels 10B, 10G, and 10R, and these sub-pixels are fixed on the substrate 21.
  • the sub-pixel 10B implements blue light by the light-emitting cell 10a or by the combination of the first light-emitting cell 10a and the first wavelength converter 51a
  • the sub- The green light is realized by the combination of the light emitting cell 10b and the second wavelength converter 51b and the sub pixel 10R realizes the red light by the combination of the third light emitting cell 10c and the third wavelength converter 51c .
  • the three sub-pixels 10B, 10G and 10R together with the substrate 21 can be mounted together on a circuit board or the like.
  • the conventional micro LED since the individual sub-pixels are mounted, the number of steps is large and the mounting process is difficult to perform.
  • one pixel since one pixel includes three sub-pixels and is implemented as one light emitting device, the size of the light emitting device is relatively larger than that of the micro LED, so that the number of mounting processes is reduced, .
  • the first to third light emitting cells 30a, 30b, and 30c occupy different areas.
  • the wavelength converters 51a, 51b, and 51c disposed on these light emitting cells occupy different areas.
  • the relative area of the light emitting cells is closely related to the light conversion efficiency of the wavelength converters, and furthermore the color filtering efficiency of the color filters 53a, 53b, 53c may also be related.
  • Wavelength converters may generally include phosphors.
  • beta sialon SiAlON
  • CASN CaAlSiN based phosphor
  • the phosphor does not convert all blue light into green light or red light, and has a constant light conversion efficiency depending on each phosphor.
  • a red phosphor that converts ultraviolet light or blue light of the same wavelength to red light has a smaller light conversion efficiency than a green phosphor that converts green light.
  • the second light emitting cell 30b of the sub pixel 10G that emits green light must also be driven at a higher current density than the first light emitting cell 30a. That is, the current density required for a typical image is different for each light emitting cell, and thus the first to third light emitting cells 30a, 30b, and 30c can not be driven with optimal light emitting efficiency conditions Lt; / RTI >
  • the first to third light emitting cells 30a, 30b, and 30c are different in area so that the current density for driving the light emitting cells is the same or similar, .
  • the relative area of the first through third light emitting cells 30a, 30b, and 30c may be determined in consideration of the relative photo-conversion efficiency of the first through third wavelength converters 51a, 51b, and 51c. The smaller the light conversion efficiency of the wavelength converter, the larger the area of the corresponding light emitting cell.
  • the first to third light emitting cells 30a, 30b, and 30c emit blue light
  • the first wavelength converter 51a is omitted
  • the second light emitting cells 30a The area ratio of the third light emitting cell 30b and the third light emitting cell 30c may be inversely proportional to the light conversion efficiency of the second wavelength converter 51b and the light conversion efficiency of the third wavelength converter 51c.
  • the second wavelength converter 51b includes beta sialon
  • the third wavelength converter includes CASN
  • the first light emitting cell 30a, the second light emitting cell 30b, (30c) may be 1: 2: 7.
  • the area ratio of the second light emitting cell 30b and the third light emitting cell 30c to the first light emitting cell 30a May be inversely proportional to the light conversion efficiency ratio of the second wavelength converter 51b and the light conversion efficiency ratio of the third wavelength converter 51c to the first wavelength converter 51a.
  • the determination of the area of the light emitting cells in consideration of the light conversion efficiency of the wavelength converters will be described.
  • the filtering efficiencies of the first to third color filters 53a, 53b, and 53c are different from each other, It is possible to determine the area of the light emitting cells.
  • the areas of the first to third light emitting cells 30a, 30b, and 30c are different from each other, and these light emitting cells can be driven under the same current density. Therefore, the current density for driving the light emitting cells can be set to the optimal condition, and the luminous efficiency can be improved.
  • FIG. 11 is a schematic plan view for explaining a light emitting device 200 according to another embodiment of the present invention
  • FIG. 12 is a schematic cross-sectional view taken along a perforated line B-B of FIG.
  • the light emitting device 200 according to the present embodiment is substantially similar to the light emitting device 100 described with reference to FIGS. 9 and 10, except that the first through third light emitting cells 30a, 30b and 30c share the first conductivity type semiconductor layer 23.
  • the first pad 33a is formed on the shared first conductive semiconductor layer 23, so that the number of the first pads 33a can be reduced compared with the previous embodiment, can do.
  • the extension portion 33c can extend from the first pad 33a.
  • the extension portion 33c can extend to a region between the light emitting cells.
  • the extended portion 33c may be disposed to surround each light emitting cell, but may be disposed at a part of the edge of each light emitting cell as shown in FIG.
  • the extension can be disposed adjacent to the edges away from the one edge, so that current is concentrated in a specific portion of the light- It is possible to improve the light efficiency.
  • FIG. 13 is a schematic plan view for explaining a light emitting device 300 according to another embodiment of the present invention
  • FIG. 14 is a schematic cross-sectional view taken along a perforated line CC in FIG. 13
  • FIG. 15 is a cross- Sectional view taken along line II-II of FIG.
  • the light emitting device 300 includes a light emitting device 300 having a light emitting cell having a horizontal structure in that each of the light emitting cells 30a, 30b, and 30c has a vertical structure 100 or 200).
  • the light emitting device 300 includes a support substrate 121, a first light emitting cell 30a, a second light emitting cell 30b, a third light emitting cell 30c, an antireflection layer 131, pads A second wavelength converter 51b, a third wavelength converter 51c, a first color filter 53a, a second color filter 53b, a third color filter 53c, A first insulating layer 35, a first electrode 39, a second electrode 36, a second insulating layer 37, a protective metal layer 41, and a bonding metal layer 45, .
  • the first to third light emitting cells 30a, 30b and 30c include a first conductive semiconductor layer 23, an active layer 25 and a second conductive semiconductor layer 27, respectively.
  • the sub-pixels 10B, 10G and 10R include the light emitting cells 30a, 30b and 30c, the wavelength converters 51a and 51b, 51b, and 51c, and color filters 53a, 53b, and 53c.
  • the support substrate 121 is a secondary substrate separated from a growth substrate for growing compound semiconductor layers and attached to the already grown compound semiconductor layers.
  • the support substrate 51 may be a conductive substrate such as a metal substrate or a semiconductor substrate.
  • the first conductivity type semiconductor layer 23, the active layer 25 and the second conductivity type semiconductor layer 27 are formed on the same growth substrate as the above-described substrate 21 in order to form the light emitting cells 30a, 30b, After the support substrate 121 is then attached, the growth substrate is removed using a stripping technique such as a laser lift-off or a chemical lift-off.
  • the first to third light emitting cells 30a, 30b, and 30c are substantially similar to the light emitting cells described above, but are arranged to emit light toward the first conductivity type semiconductor layer 23 side.
  • the light emitting cells 30a, 30b and 30c are provided with a through hole 30h or a groove for exposing the first conductivity type semiconductor layer 23 through the second conductivity type semiconductor layer 27 and the active layer 25 Lt; / RTI >
  • the first conductive type semiconductor layer 23, the active layer 25, and the second conductive type semiconductor layer 27 are similar to those described in the previous embodiment, so that detailed description is omitted to avoid duplication.
  • a roughness may be formed on the surface of the first conductivity type semiconductor layer 23, and the antireflection layer 131 may cover the roughness.
  • the antireflection layer 131 may also cover the side surfaces of the light emitting cells 30a, 30b, and 30c.
  • the roughness may be formed using a wet etching technique such as a light enhanced chemical etching, and the antireflection layer 131 may be formed using an atomic layer deposition technique.
  • the antireflection layer 131 may have a layered structure of SiO2 / Al2O3 / SiO2, for example, and may be formed along the roughness terrain.
  • the first insulating layer 35 is positioned between the first to third light emitting cells 30a, 30b, and 30c and the support substrate 121. As shown in FIG. The first insulating layer 35 may cover the side surfaces of the active layer 25 exposed in the through holes 30h and the side surfaces of the second conductivity type semiconductor layer 27. [ On the other hand, the insulating layer 35 exposes the lower surface of the second conductivity type semiconductor layer 27.
  • the first insulating layer 35 may be a single layer or multiple layers of a silicon oxide film or a silicon nitride film, or may include a distributed Bragg reflector in which insulating layers having different refractive indices are repeatedly laminated. If the insulating layer 35 comprises a distributed Bragg reflector, the insulating layer 35 may also include an interface layer between the distributed Bragg reflector and the second conductive type semiconductor layer 27.
  • the insulating layer 35 is, for example SiO 2, MgF 2, TiO 2 or may include Nb 2 O 5, the one example, SiO 2 or MgF 2 on the interface layer is TiO2 / SiO2 or Nb2O5 / SiO2 repeat laminate And may include a distributed Bragg reflector.
  • the second electrode 36 may include an ohmic reflective layer 32 and a barrier metal layer 34.
  • the ohmic reflective layer 32 ohmically contacts the second conductive semiconductor layer 27 exposed through the openings of the insulating layer 35.
  • the ohmic reflective layer 32 may be in contact with the insulating layer 35, but the edge of the ohmic reflective layer 32 may be spaced from the insulating layer 35 as shown in the figure.
  • the ohmic reflective layer 32 may include a reflective layer, such as Ag, and may include a metal layer for ohmic contact, such as Ni.
  • the ohmic reflective layer 32 is located within the lower region of the second conductivity type semiconductor layer 27.
  • the barrier metal layer 34 is located between the ohmic reflective layer 32 and the support substrate 51 and covers the ohmic reflective layer 32.
  • the barrier metal layer 34 prevents migration of a metal material, such as Ag, of the ohmic reflective layer 32.
  • the barrier metal layer 34 may cover the side surface of the OMR reflective layer 32 but the barrier metal layer 34 may be disposed on the OMR reflective layer 32 such that the side surface of the OMR reflective layer 32 is exposed, It is possible. By exposing the side surface of the OMR reflective layer 32, the OMR reflective layer 32 can be formed in a relatively large area, thereby reducing the contact resistance and lowering the forward voltage.
  • the barrier metal layer 35 may comprise, for example, Pt, Ni, Ti, W, Au, or an alloy thereof.
  • the barrier metal layer 34 may also cover the insulating layer 35 inside the embedded portions of the light emitting cells 30a, 30b and 30c and may be electrically connected to the pad 33b formed in the embedded portion .
  • the second insulating layer 37 covers the barrier metal layer 34 under the barrier metal layer 34.
  • the second insulating layer 37 may cover the entire bottom surface of the barrier metal layer 34. Further, the second insulating layer 37 may cover the side surface of the barrier metal layer 34 to prevent the side surface of the barrier metal layer 34 from being exposed to the outside.
  • the second insulating layer 37 may be a single layer or a multilayer of a silicon oxide film or a silicon nitride film or may include a distributed Bragg reflector in which insulating layers having different refractive indices such as SiO2 / TiO2 or SiO2 / Nb2O5 are repeatedly laminated have. If the second insulating layer 37 comprises a distributed Bragg reflector, the second insulating layer 37 may also include an interface layer between the distributed Bragg reflector and the first insulating layer 31.
  • the first insulating layer 37 may include, for example, SiO 2 , MgF 2 , TiO 2, or Nb 2 O 5. For example, TiO 2 / SiO 2 or Nb 2 O 5 / SiO 2 may be repeatedly formed on the SiO 2 or MgF 2 interface layer Stacked distributed Bragg reflectors.
  • the first electrode 39 is located between the second insulating layer 37 and the supporting substrate 51 and is electrically connected to the first conductive semiconductor layer 31 through the first insulating layer 35 and the second insulating layer 37. [ (23). The first electrode 39 is disposed between the second electrode 34 and the supporting substrate 51 and the first electrode 39 is formed on the first conductive semiconductor layer 23 exposed through the through hole 30h Can be connected. Further, the first electrode 39 is insulated from the active layer 25 and the second conductivity type semiconductor layer 27 by the first insulating layer 35 and the second insulating layer 37.
  • the first electrode 39 may include an ohmic layer that makes an ohmic contact with the first conductive semiconductor layer 23, and may include a reflective metal layer.
  • the first electrode 39 may include Cr / Au, and may further include Ti / Ni.
  • the protective metal layer 41 may cover the bottom surface of the first electrode 39.
  • the protective metal layer 41 protects the first electrode 39 by preventing diffusion of a metallic material such as Sn from the bonding metal layer 45.
  • the protective metal layer 41 may include Au, for example, and may further include Ti and Ni.
  • the protective metal layer 41 can be formed, for example, by repeatedly laminating Ti / Ni a plurality of times and then stacking Au.
  • the support substrate 121 may be bonded onto the protective metal layer 41 through the bonding metal layer 45.
  • the bonding metal layer 45 may be formed using AuSn or NiSn, for example.
  • the support substrate 121 may be formed on the protective metal layer 41 using, for example, a plating technique.
  • the support substrate 121 is a conductive substrate, it may function as a pad. Accordingly, the first conductivity type semiconductor layers 23 of the first to third light emitting cells 30a, 30b, and 30c are electrically connected to each other, and the support substrate 121 is used as a common electrode.
  • Each of the light emitting cells 30a, 30b and 30c may have a depressed portion in which a first conductivity type semiconductor layer 23, an active layer 25 and a second conductivity type semiconductor layer 27 are removed at one corner portion
  • pads 133b may be disposed within the recesses and electrically connected to the barrier metal layer 34, respectively.
  • the first to third wavelength converters 51a to 51c and the first to third color filters 53a to 53b are disposed on the first to third light emitting cells 30a to 30c Thereby forming sub-pixels 10B, 10G and 10R.
  • the first to third wavelength converters 51a, 51b, and 51c and the first to third color filters 53a, 53b, and 53 are similar to those described above with reference to FIGS. 9 and 10, The description is omitted.
  • the wavelength converters 51a, 51b and 51c are disposed on the side of the second conductivity type semiconductor layer 27 in the above embodiments, the light emitting cells 30a, 30b and 30c are formed in the vertical type
  • the first to third wavelength converters 51a to 51c and the first to third color filters 53a to 53b are disposed on the first conductivity type semiconductor layer 23 side.
  • the barrier ribs 55 are disposed in the region between the light emitting cells 30a, 30b, and 30c, and may surround the light emitting cells.
  • the partition 55 may also surround the side of the pad 133b.
  • the barrier rib 55 may be a white resin or a photosensitive solder resist having a light reflecting function as described above.
  • the first to third light emitting cells 30a, 30b, and 30c occupy different areas, which are similar to those described with reference to FIGS. 9 and 10, do.
  • FIG. 16 is a schematic plan view for explaining a light emitting device 400 according to another embodiment of the present invention
  • FIG. 17 is a schematic sectional view taken along a perforated line E-E in FIG.
  • the light emitting device 400 according to the present embodiment differs from the light emitting device of the previous embodiments in that it has a flip structure.
  • the light emitting device 400 includes a substrate 21, first to third light emitting cells, an ohmic reflective layer 231, a first insulating layer 233, The first wavelength converter 51a, the second wavelength converter 51b, the third wavelength converter 51c, the first color filter 53a, the second color filter 53a, A second color filter 53b, a third color filter 53c, and a partition 55 (or partition).
  • the first to third light emitting cells 30a, 30b and 30c include a first conductive semiconductor layer 23, an active layer 25 and a second conductive semiconductor layer 27, respectively.
  • the light emitting device 400 includes the sub pixels 10B, 10G and 10R and the sub pixels 10B, 10G and 10R are connected to the light emitting cells 30, the wavelength converters 51a, 51b and 51c, And color filters 53a, 53b, and 53c.
  • the substrate 21 is as described with reference to FIGS. 9 and 10, detailed description is omitted.
  • the first conductivity type semiconductor layer 23, the active layer 25, and the second conductivity type semiconductor layer 27 are similar to those of the above-described embodiments, and a detailed description thereof will be omitted.
  • the light emitting cells are disposed under the substrate 21 and the light emitting cells expose the first conductivity type semiconductor layer 23 through the second conductivity type semiconductor layer 27 and the active layer 25.
  • the area and stacking structure of the light emitting cells are similar to those of the first to third light emitting cells 30a, 30b, and 30c described in the previous embodiments, and thus their detailed description is omitted.
  • the ohmic reflective layer 231 is in ohmic contact with the second conductivity type semiconductor layer 27 of each light emitting cell.
  • the ohmic reflective layer 231 may include an ohmic layer and a reflective layer, for example, an ohmic layer such as Ni or ITO, and a reflective layer such as Ag or Al.
  • the ohmic reflective layer 231 may also include an insulating layer such as SiO2 between the transparent oxide layer such as ITO and the reflective layer, and the reflective layer may be connected to the transparent oxide layer through the insulating layer.
  • the first insulating layer 233 covers the light emitting cells and covers the side surfaces of the exposed second conductive semiconductor layer 27 and the active layer 25.
  • the first insulating layer 233 has openings for exposing the first conductive semiconductor layer 23 and the ohmic reflective layer 231.
  • the first insulating layer 233 may be formed of a single layer such as SiO 2 or Si 3 N 4, but is not limited thereto, and may be formed of multiple layers.
  • the first insulating layer 233 may comprise a distributed Bragg reflector.
  • a first pad electrode 235a and a second pad electrode 235b are disposed on the first insulating layer 233.
  • the first pad electrode 235a and the second pad electrode 235b are disposed on each light emitting cell and the first pad electrode 235a is electrically connected to the first conductivity type semiconductor layer 23,
  • the electrode 235b is electrically connected to the ohmic reflective layer 231.
  • the first pad electrode 235a and the second pad electrode 235b may be formed together in the same process and therefore may be located at the same level. In certain embodiments, the second pad electrode 235b may be omitted.
  • the second insulating layer 237 covers the first and second pad electrodes 235a and 235b and has openings for exposing the first and second pad electrodes 235a and 235b.
  • the second insulating layer 237 may be formed of a single layer such as SiO2 or Si3N4, but is not limited thereto and may be formed of multiple layers.
  • the first insulating layer 233 may comprise a distributed Bragg reflector.
  • the first and second bump pads 243a and 243b are formed on the respective light emitting cells and connected to the first and second pad electrodes 235a and 235b through openings of the second insulating layer 237 do. Specifically, the first bump pad 243a is connected to the first pad electrode 235a, and the second bump pad 243b is connected to the second pad electrode 235b.
  • the bump pads 243a and 243b occupy a relatively large area compared to the pads of the above-described embodiments, and the maximum width of the bump pads 243a and 243b exceeds at least 1/2 of the minimum width of the light emitting cells can do.
  • the bump pads 243a and 243b may have a rectangular shape as shown, but not limited thereto, and may have a circular or elliptical shape.
  • the bump pads 243a and 243b may include Au or AuSn.
  • a dummy bump pad 243c may be disposed on at least one light emitting cell.
  • the dummy bump pads 243c can be disposed in the light emitting cells having a relatively large area.
  • the dummy bump pad 243c can be used as a heat dissipation path for emitting heat generated in the light emitting cells, thereby improving the light efficiency of the light emitting device.
  • the support member 245 may cover the side surfaces of the bump pads 243a and 243b.
  • the support member 245 may also cover the side surface of the dummy bump pad 243c.
  • the support member 245 may be formed of a thermosetting or thermoplastic resin.
  • the first to third wavelength converters 51a, 51b and 51c are arranged on the substrate 21 in opposition to the light emitting cells.
  • the first to third wavelength converters 51a, 51b and 51c are disposed on the corresponding light emitting cells.
  • the first to third color filters 53a, 53b, and 53c are disposed on the first to third wavelength converters 51a, 51b, and 51c, respectively. Since the first to third wavelength converters 51a, 51b, and 51c and the first to third color filters 53a, 53b, and 53c are similar to those described above, a detailed description thereof will be omitted.
  • the barrier ribs 55 may be positioned between the wavelength converters 51a, 51b, and 51c.
  • the barrier ribs 55 may be formed of a white resin or a photosensitive solder resist.
  • the barrier ribs 55 are disposed between the light emitting cells 30a, 30b and 30c in the above embodiments, the barrier ribs 55 are disposed on the substrate 21 in this embodiment , No barrier ribs 55 are formed in the region between the light emitting cells.
  • the first insulating layer 233 may include a distributed Bragg reflector, or the first pad electrode 235a and / or the second pad electrode 235b may be disposed so as to cover the sidewalls of the light emitting cells, It is possible to prevent the optical interference of the light-
  • the light emitting efficiency of each light emitting cell can be improved.
  • the light emitting cells have different areas, and the area of the light emitting cells is determined in consideration of the light conversion efficiency of the wavelength converter as described above.
  • FIG. 18 is a schematic cross-sectional view for explaining a light emitting device 500 according to another embodiment of the present invention.
  • the light emitting device 500 is substantially similar to the light emitting device described with reference to FIGS. 16 and 17, except that the substrate 21 is omitted.
  • the first to third wavelength converters 51a, 51b and 51c are disposed on the light emitting cells instead of being disposed on the substrate 21.
  • a roughness may be formed on the surface of the first conductivity type semiconductor layer 23, and an antireflection layer may be formed on the surface of the first conductivity type semiconductor layer 23 .
  • the light emitting cells can be supported by the support member 245.
  • optical interference between adjacent sub-pixels 10B, 10G, and 10R can be blocked.
  • 19A and 19B are sectional views for explaining a film including a wavelength converter.
  • the first to third wavelength converters 51a, 51b, and 51c are separated from each other and attached to the light emitting cells 30a, 30b, and 30c, respectively, However, in this embodiment, the first to third wavelength converters 51a, 51b and 51c are arranged in one layer in one film. Transparent or opaque resin 151 may be disposed in the region between the wavelength converters 51a 51b and 51c.
  • the first wavelength converter 51a when the light emitting cells emit blue light, the first wavelength converter 51a may be omitted.
  • the transparent resin 151 may be located at the position of the first wavelength converter 51a have.
  • the film according to the present embodiment is a laminated film of several layers, for example, the first layer 151a includes a first wavelength converter 51a, and the second layer 151b includes a second wavelength Converter 51b, and the third layer 151c may include a third wavelength converter 51c.
  • Each of the first to third layers may be composed of a combination of a transparent resin 151 and a wavelength converter.
  • the first layer 151a may be omitted.
  • 20 is a schematic plan view for explaining a display device according to an embodiment of the present invention.
  • a display device includes a circuit board 150 and a light emitting device 100 arranged on the circuit board 150.
  • the light emitting device 100 includes the first to third sub pixels 10B, 10G, and 10R as the light emitting device described with reference to FIGS. 9 and 10, and includes pads 33a and 33b.
  • Circuit board 150 has circuit wiring for supplying current to pads 33a and 33b on pixel 100 and pads 33a and 33b are electrically connected to circuitry on circuit board 150.
  • the pads 33a and 33b may be electrically connected to the circuit board 150 using bonding wires.
  • the pixel 100 includes three sub-pixels, which can implement blue light, green light and red light, respectively. Therefore, each pixel 100 constitutes one pixel, and an image can be implemented using these light emitting elements 100.
  • the pixel 100 is described as being arranged on the circuit board 150 in the present embodiment, the light emitting elements 200, 300, 400, or 500 may be arranged, and various light emitting elements may be used in combination .
  • the light emitting device may be mounted on the circuit board using Au-Au bonding or AuSN bonding in addition to the bonding wire corresponding to the structure of the light emitting cells.
  • 21 is a perspective view showing a display device according to an embodiment of the present invention.
  • the display device 1000 may include a plurality of modules DM.
  • Each module DM may include a sub-display 100 'and a support 200.
  • the sub-display device 100 ' is provided with a plurality of pixels, which include a plurality of light-emitting diodes as described above.
  • one pixel may be provided with a red light emitting cell for emitting red light, a blue light emitting cell for emitting blue light, and a green light emitting cell for emitting green light.
  • a plurality of such light emitting diodes are provided, and a plurality of pixels can be supported by the same support 200.
  • the display device 1000 is provided with a plurality of modules DM, and thus the display device 1000 can be enlarged.

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

Selon un mode de réalisation, un dispositif électroluminescent comprend : une première cellule électroluminescente, une deuxième cellule électroluminescente et une troisième cellule électroluminescente, chacune comprenant une première couche semi-conductrice conductrice, une couche active et une seconde couche semi-conductrice conductrice; des pastilles électriquement connectées aux première à troisième cellules électroluminescentes, de façon à activer indépendamment les première à troisième cellules électroluminescentes; un convertisseur de deuxième longueur d'onde, permettant de convertir une longueur d'onde de lumière émise par la deuxième cellule électroluminescente; et un convertisseur de troisième longueur d'onde, permettant de convertir une longueur d'onde de lumière émise par la troisième cellule électroluminescente, le convertisseur de troisième longueur d'onde convertissant la longueur d'onde de la lumière à une longueur d'onde plus longue que celle du convertisseur de deuxième longueur d'onde, la deuxième cellule électroluminescente ayant une surface plus grande que celle de la première cellule électroluminescente et la troisième cellule électroluminescente ayant une surface plus grande que celle de la deuxième cellule électroluminescente.
PCT/KR2018/011425 2017-09-29 2018-09-27 Module électroluminescent et dispositif d'affichage le comportant WO2019066491A1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
BR112020005890-4A BR112020005890A2 (pt) 2017-09-29 2018-09-27 dispositivo emissor de luz e aparelho de exibição incluindo o mesmo
US16/646,537 US11641008B2 (en) 2017-09-29 2018-09-27 Light emitting device and display apparatus including the same
CN201880037296.0A CN110720144B (zh) 2017-09-29 2018-09-27 发光元件以及具有该发光元件的显示装置
JP2020515261A JP7389021B2 (ja) 2017-09-29 2018-09-27 発光素子及びそれを有する表示装置
EP18861552.0A EP3690944A4 (fr) 2017-09-29 2018-09-27 Module électroluminescent et dispositif d'affichage le comportant
US17/509,050 US11824145B2 (en) 2017-09-29 2021-10-24 Light emitting device and display apparatus including the same
US18/503,590 US20240079534A1 (en) 2017-09-29 2023-11-07 Light emitting device and display apparatus including the same
JP2023194352A JP2024014952A (ja) 2017-09-29 2023-11-15 発光素子及びそれを有する表示装置

Applications Claiming Priority (6)

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KR20170127133 2017-09-29
KR10-2017-0127133 2017-09-29
KR10-2017-0157669 2017-11-23
KR20170157669 2017-11-23
KR10-2018-0113679 2018-09-21
KR1020180113679A KR102650950B1 (ko) 2017-09-29 2018-09-21 발광 소자 및 그것을 갖는 표시 장치

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US16/646,537 A-371-Of-International US11641008B2 (en) 2017-09-29 2018-09-27 Light emitting device and display apparatus including the same
US17/509,050 Continuation US11824145B2 (en) 2017-09-29 2021-10-24 Light emitting device and display apparatus including the same

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JP2021064789A (ja) * 2019-10-14 2021-04-22 隆達電子股▲ふん▼有限公司 発光ダイオードパッケージ構造
EP3709364A4 (fr) * 2017-11-08 2021-06-23 Seoul Viosys Co., Ltd. Unité de diode électroluminescente pour dispositif d'affichage comprenant une pluralité de pixels et dispositif d'affichage doté de celle-ci
CN114023785A (zh) * 2021-11-02 2022-02-08 业成科技（成都）有限公司 显示装置
JP2022536436A (ja) * 2019-09-18 2022-08-17 泉州三安半導体科技有限公司 発光ダイオードパッケージアセンブリ

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EP3709364A4 (fr) * 2017-11-08 2021-06-23 Seoul Viosys Co., Ltd. Unité de diode électroluminescente pour dispositif d'affichage comprenant une pluralité de pixels et dispositif d'affichage doté de celle-ci
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