WO2019066491A1 - Light emitting device and display device having same - Google Patents

Light emitting device and display device having same Download PDF

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Publication number
WO2019066491A1
WO2019066491A1 PCT/KR2018/011425 KR2018011425W WO2019066491A1 WO 2019066491 A1 WO2019066491 A1 WO 2019066491A1 KR 2018011425 W KR2018011425 W KR 2018011425W WO 2019066491 A1 WO2019066491 A1 WO 2019066491A1
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WO
WIPO (PCT)
Prior art keywords
light emitting
light
emitting cell
wavelength converter
wavelength
Prior art date
Application number
PCT/KR2018/011425
Other languages
French (fr)
Korean (ko)
Inventor
이정훈
손성수
이종익
임재희
타케야모토노부
홍승식
Original Assignee
서울반도체 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020180113679A external-priority patent/KR102650950B1/en
Application filed by 서울반도체 주식회사 filed Critical 서울반도체 주식회사
Priority to EP18861552.0A priority Critical patent/EP3690944A4/en
Priority to JP2020515261A priority patent/JP7389021B2/en
Priority to CN201880037296.0A priority patent/CN110720144B/en
Priority to US16/646,537 priority patent/US11641008B2/en
Priority to BR112020005890-4A priority patent/BR112020005890A2/en
Publication of WO2019066491A1 publication Critical patent/WO2019066491A1/en
Priority to US17/509,050 priority patent/US11824145B2/en
Priority to US18/503,590 priority patent/US20240079534A1/en
Priority to JP2023194352A priority patent/JP2024014952A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention relates to a light emitting device and a display device having the same.
  • Light emitting diodes among light emitting devices are inorganic light sources, and they are widely used in various fields such as display devices, automotive lamps, and general lighting. Light emitting diodes are rapidly replacing existing light sources because they have a long lifetime, low power consumption, and fast response time.
  • a conventional light emitting diode has been mainly used as a backlight light source in a display device.
  • a micro LED has been developed as a next-generation display device that implements a direct image using a light emitting diode.
  • the display device generally uses various colors of blue, green, and red to realize various colors.
  • Each pixel of the display device has blue, green and red sub-pixels, and the color of the specific pixel is determined through the color of these sub-pixels, and the image is realized by the combination of these pixels.
  • a micro LED In the case of a micro LED display device, a micro LED is arranged corresponding to each sub-pixel, so that a large number of micro LEDs must be arranged on one substrate.
  • the size of the micro LED is very small, which is less than 200 micrometers and less than 100 micrometers, and this small size causes various problems. Particularly, it is difficult to handle a light emitting diode of a small size, so it is not easy to mount a light emitting diode on a panel, and it is also difficult to replace a defective LED among mounted micro LEDs with a good LED.
  • the light emitting diode generally emits ultraviolet light or blue light, and can realize green light and red light in combination with the phosphor.
  • a color filter is used for each sub-pixel. Accordingly, even when the same light emitting diode is operated and light of the same intensity is emitted, a difference in light intensity occurs between the blue sub-pixel, the green sub-pixel and the red sub-pixel. In order to overcome such a difference, it is possible to change the operating current density of each light emitting diode. However, the light emitting efficiency of the light emitting diode may be reduced according to the change of the current density.
  • a problem to be solved by the present invention is to provide a light emitting diode which is easy to mount and replace and a display device having the same.
  • Another object of the present invention is to provide a light emitting diode capable of operating light emitting diodes of each sub-pixel with optimal light emitting efficiency and a display device having the light emitting diode.
  • Another object of the present invention is to provide a display device having high color purity and high color reproducibility.
  • a light emitting device includes a first light emitting cell, a second light emitting cell, and a third light emitting cell including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, respectively; Pads electrically connected to the first through third light emitting cells to independently drive the first through third light emitting cells; A second wavelength converter for converting a wavelength of light emitted from the second light emitting cell; And a third wavelength converter for converting a wavelength of light emitted from the third light emitting cell, wherein the third wavelength converter converts the wavelength of light to a wavelength longer than that of the second wavelength converter,
  • the third light emitting cell has a larger area than the first light emitting cell, and the third light emitting cell has a larger area than the second light emitting cell.
  • the first to third light emitting cells emit blue light
  • the second wavelength converter converts the blue light into green light
  • the third wavelength converter converts the blue light into red light
  • the area ratio of the second light emitting cell and the third light emitting cell to the first light emitting cell is inversely proportional to the light conversion efficiency of the second wavelength converter and the light conversion efficiency of the third wavelength converter, can do.
  • the light emitting device further includes a first wavelength converter for converting the wavelength of the light emitted from the first light emitting cell into light of the first wavelength, wherein the first wavelength converter converts the second wavelength The wavelength of the light is changed to a shorter wavelength than the converter, and the first to third light emitting cells can emit ultraviolet rays.
  • the first wavelength converter converts ultraviolet light into blue light
  • the second wavelength converter converts the ultraviolet light into green light
  • the third wavelength converter converts the ultraviolet light into red light have.
  • the area ratio of the second light emitting cell and the third light emitting cell with respect to the first light emitting cell may be set such that the ratio of the light conversion efficiency of the second wavelength converter to the first wavelength converter, And may be inversely proportional to the light conversion efficiency ratio of the wavelength converter.
  • the light emitting device comprises: a first color filter disposed on the first wavelength converter; A second color filter disposed on the second wavelength converter; And a third color filter disposed on the third wavelength converter.
  • the light emitting device comprises a second color filter disposed on the second wavelength converter; And a third color filter disposed on the third wavelength converter.
  • the light emitting device may further include a substrate on which the first to third light emitting cells are disposed.
  • the first light emitting cell to the third light emitting cell may include a barrier provided between the first light emitting cell and the third light emitting cell, And the distance between the barrier ribs and the first light emitting cell to the third light emitting cell may be 10 ⁇ ⁇ to 20 ⁇ ⁇ .
  • the barrier ribs provided between the first light emitting cell and the third light emitting cell may be connected to each other.
  • the width of the partition wall may increase as the distance from the substrate increases.
  • the ratio of the area occupied by the barrier ribs to the area of the planar surface of the substrate may be 0.5 to 0.99.
  • the height of the barrier rib may be 15 to 115 ⁇ .
  • the first light emitting cell emits red light
  • the second light emitting cell emits green light
  • the third light emitting cell emits blue light
  • the first light emitting cell and the second light emitting cell The distance between the two light emitting cells may be the same as the distance between the first light emitting cell and the third light emitting cell. In an embodiment of the present invention, the distance between the first light emitting cell and the second light emitting cell may be different from the distance between the second light emitting cell and the third light emitting cell.
  • the first light emitting cell to the third light emitting cell are provided in one light emitting element, and the first light emitting cell to the third light emitting cell distance provided to one pixel is May be shorter than a distance between the first light emitting cell to the third light emitting cell provided for the provided first light emitting cell to the third light emitting cell and the pixel adjacent to the one pixel.
  • the first light emitting cell to the third light emitting cell may be arranged in a triangular shape, or the first light emitting cell to the third light emitting cell may be arranged in a straight line.
  • the first to third light emitting cells may share a first conductive type semiconductor layer.
  • the light emitting device may further include an extension extending from a pad electrically connected to the shared first conductive semiconductor layer among the pads.
  • the second wavelength converter and the third wavelength converter may be located in the same film.
  • the second wavelength converter and the third wavelength converter are located within the laminated film, and the second wavelength converter and the third wavelength converter may be located in different layers.
  • the light emitting device comprises a substrate; A first light emitting cell, a second light emitting cell, and a third light emitting cell provided on the substrate and emitting red light, green light, and blue light; Wherein each of the first to third light emitting cells has a height lower than a height of the barrier ribs, and the height of the first to third light emitting cells is lower than the height of the barrier ribs, The distance between the first light emitting cell and the third light emitting cell may be 5 ⁇ or less.
  • the light emitting device of the present invention may be employed in a display device, and the display device includes a circuit board and a plurality of pixels arranged on the circuit board, wherein each of the plurality of pixels includes a light emitting element Lt; / RTI >
  • a sub-pixel including first to third light emitting cells and emitting light of different colors can be disposed in one light emitting diode, thereby providing a light emitting diode that can be easily mounted and replaced . Further, by varying the areas of the first to third light emitting cells, the light emitting cells of each sub-pixel can be operated with the optimal light emitting efficiency.
  • a display device having high color purity and high color reproducibility is provided.
  • FIG. 1 is a plan view of a display device according to an embodiment of the present invention.
  • FIG. 2 is an enlarged plan view showing a portion P1 in Fig.
  • FIG. 3 is a structural view illustrating a display device according to an embodiment of the present invention.
  • 4A is a circuit diagram showing a sub-pixel, and is a circuit diagram showing an example of pixels constituting a passive display device.
  • 4B is a circuit diagram showing a sub-pixel, and is a circuit diagram showing an example of pixels constituting an active display device.
  • FIG. 5A is a plan view showing one pixel in the display device shown in FIG. 2.
  • FIG. 5A is a plan view showing one pixel in the display device shown in FIG. 2.
  • 5B is a cross-sectional view taken along line I-I 'of FIG. 5A.
  • FIG. 6 is a cross-sectional view illustrating a light emitting cell according to an embodiment of the present invention.
  • 7A and 7B are plan views illustrating pixels according to an embodiment of the present invention.
  • 8A to 8D are cross-sectional views illustrating a display device according to an embodiment of the present invention.
  • FIG. 9 is a schematic plan view illustrating a light emitting device according to an embodiment of the present invention.
  • FIG. 10 is a schematic cross-sectional view taken along section line A-A in Fig.
  • FIG. 11 is a schematic plan view illustrating a light emitting device according to another embodiment of the present invention.
  • FIG. 12 is a schematic cross-sectional view taken along the perforated line B-B in Fig.
  • FIG. 13 is a schematic plan view for explaining a pixel according to another embodiment of the present invention.
  • FIG. 14 is a schematic cross-sectional view taken along the perforated line C-C in Fig.
  • FIG. 15 is a schematic enlarged cross-sectional view taken along the perforated line D-D in Fig.
  • 16 is a schematic plan view for explaining a pixel according to another embodiment of the present invention.
  • FIG. 17 is a schematic cross-sectional view taken along the percutaneous line E-E in Fig.
  • FIG. 18 is a schematic cross-sectional view for explaining a pixel according to another embodiment of the present invention.
  • 19A and 19B are sectional views for explaining a film including a wavelength converter.
  • 20 is a schematic plan view for explaining a display device according to an embodiment of the present invention.
  • 21 is a perspective view showing a display device according to an embodiment of the present invention.
  • An embodiment of the present invention relates to a light emitting device that emits light and can be used as a light source in various devices, and in particular, can be employed in a display device to function as a pixel.
  • a display device will be described, and an embodiment of a light emitting element as a pixel employed in a display device will be described in sequence with reference to the drawings.
  • the light emitting device according to an embodiment of the present invention is not only used for a display device, but may be employed as a light source in other devices as needed.
  • FIG. 1 is a plan view of a display device according to an embodiment of the present invention
  • FIG. 2 is an enlarged plan view showing a portion P1 in FIG.
  • a display device 10 displays arbitrary time information, for example, text, video, photograph, two-dimensional or three-dimensional image, and the like.
  • the display device 10 may be provided in various shapes, including a closed polygon including sides of a straight line such as a rectangle, a circle including sides made of a curved line, an ellipse, etc., and straight and curved sides Semicircular, semi-elliptical, and other shapes.
  • the display device is provided in a rectangular shape.
  • the display device 10 has a plurality of pixels 100 for displaying an image.
  • Each of the pixels 100 is a minimum unit for displaying an image.
  • Each pixel 100 can emit white light and / or color light.
  • Each pixel 100 may include one sub-pixel that emits one color, but may include a plurality of different sub-pixels so that different colors may be combined to emit white light and / or color light.
  • Each pixel 100 may be embodied as a light emitting element.
  • the term light emitting element is used in substantially the same meaning as a pixel in consideration of the fact that it can be used to implement one pixel.
  • each pixel 100 may include a plurality of light emitting cells, or sub-pixels implemented with a plurality of light emitting cells and other components for converting light from the light emitting cells.
  • the plurality of light emitting cells may be implemented as first through third light emitting cells 111P, 113P, and 115P, for example.
  • each pixel may include a light emitting cell G for emitting green light, a light emitting cell R for emitting red light, and a light emitting cell B for emitting blue light
  • the third to fourth light emitting cells 111P, 113P and 115P may correspond to the light emitting cell G for emitting green light, the light emitting cell R for emitting red light, and the light emitting cell B for emitting blue light.
  • the light emitting cells that each pixel 100 can include are not limited thereto.
  • each pixel 100 may include a light emitting cell that emits cyan, magenta, yellow light, etc., and each pixel includes a green light emitting cell (G) emitting green light, a red light emitting red light A cell R, and a blue light emitting cell B for emitting blue light.
  • G green light emitting cell
  • the pixels 100 and / or the light emitting cells 111P, 113P, and 115P are arranged in a matrix form.
  • the pixels 100 and / or the light emitting cells 111P, 113P, and 115P are arranged in a matrix form, meaning that the pixels 100 and / or the light emitting cells 111P, But they are arranged in a row or column as a whole, but they may be arranged in a zigzag shape, and the detailed positions may be changed.
  • FIG. 3 is a structural view illustrating a display device according to an embodiment of the present invention.
  • a display device 10 includes a timing controller 350, a scan driver 310, a data driver 330, a wiring portion, and pixels.
  • the pixels include a plurality of light emitting cells 111P, 113P, and 115P, the light emitting cells 111P, 113P, and 115P are individually connected to the scan driver 310, the data driver 330, And the like.
  • the timing control unit 350 receives various control signals and image data necessary for driving the display device from outside (for example, a system for transmitting image data).
  • the timing controller 350 rearranges the received image data and transmits the image data to the data driver 330.
  • the timing controller 350 generates scan control signals and data control signals necessary for driving the scan driver 310 and the data driver 330 and supplies the generated scan control signals and data control signals to the scan driver 310 and the data driver 330.
  • the scan driver 310 receives a scan control signal from the timing controller 350 and generates a scan signal corresponding to the scan control signal.
  • the data driver 330 receives the data control signal and the image data from the timing controller 350 and generates a data signal corresponding thereto.
  • the wiring portion includes a plurality of signal wirings.
  • the wiring portion includes first wires 130, a data driver 330, and light emitting cells 111P, 113P, and 115P that connect the scan driver 310 and the light emitting cells 111P, 113P, and 115P And the second wirings 120 connecting the first wirings 120.
  • the first wirings 130 may be scan wirings
  • the second wirings 120 may be data wirings.
  • the first wirings are referred to as scan wirings, As data lines.
  • the wiring unit further includes wiring for connecting the timing control unit 350 and the scan driving unit 310, the timing control unit 350 and the data driving unit 330, or other components and transmitting the corresponding signals.
  • the scan lines 130 provide scan signals generated in the scan driver 310 to the light emitting cells 111P, 113P, and 115P.
  • the data signal generated in the data driver 330 is output to the data lines 120.
  • the data signal output to the data lines 120 is input to the light emitting cells 111P, 113P, and 115P of the horizontal pixel line selected by the scan signals.
  • the light emitting cells 111P, 113P, and 115P are connected to the scan lines 130 and the data lines 120, respectively.
  • the light emitting cells 111P, 113P, and 115P selectively emit light corresponding to a data signal input from the data lines 120 when a scan signal is supplied from the scan lines 130.
  • each of the light emitting cells 111P, 113P, and 115P emits light with a luminance corresponding to the input data signal.
  • the light emitting cells 111P, 113P, and 115P supplied with the data signals corresponding to the black luminance display black by non-emitting light during the corresponding frame period.
  • the sub-pixels i.e., the light emitting cells
  • the display device can be driven either passive or active.
  • the display device may be further supplied with the first and second sub-pixel power sources in addition to the scan signal and the data signal.
  • the sub-pixel may be one of sub-pixels, for example, a red sub-pixel, a green sub-pixel, and a blue sub-pixel, and the first light emitting cell 111P is shown in the present embodiment.
  • the first light emitting cell 111P includes a light source LD connected between the scan line 130 and the data line 120.
  • the light source LD may be a light emitting diode having first and second terminals.
  • the first and second terminals are respectively connected to a first electrode (e.g., an anode) and a second electrode (e.g., a cathode) in the light emitting cell.
  • the first terminal may be connected to the scan wiring 130
  • the second terminal may be connected to the data line 120, or vice versa.
  • the light source LD emits light with a luminance corresponding to the magnitude of the applied voltage when a voltage equal to or higher than the threshold voltage is applied between the first electrode and the second electrode. That is, the emission of the first light source 111P can be controlled by adjusting the voltage of the scan signal applied to the scan line 130 and / or the data signal applied to the data line 120.
  • the light source LD is connected between the scan line 130 and the data line 120, but the present invention is not limited thereto.
  • a plurality of light sources LD may be connected between the scan lines 130 and the data lines 120. In this case, the light sources LD may be connected in parallel or in series.
  • FIG. 4B is a circuit diagram showing the first light emitting cell 111P, and is a circuit diagram showing an example of sub-pixels constituting an active display device.
  • the first light emitting cell 111P may be further supplied with the first and second sub pixel power supplies ELVDD and ELVSS in addition to the scan signal and the data signal.
  • the first light emitting cell 111P includes at least one light source (LD) and a transistor portion (TFT) connected thereto.
  • LD light source
  • TFT transistor portion
  • the first electrode of the light source LD is connected to the first sub pixel power source ELVDD via the transistor portion TFT and the second electrode thereof is connected to the second sub pixel power source ELVSS.
  • the first sub pixel power supply ELVDD and the second sub pixel power supply ELVSS may have different potentials.
  • the second sub pixel power ELVSS may have a potential lower than the threshold voltage of the light emitting cell than the potential of the first sub pixel power ELVDD.
  • Each of these light sources emits light with a luminance corresponding to the driving current controlled by the transistor portion (TFT).
  • the transistor portion TFT includes first and second transistors M1 and M2 and a storage capacitor Cst.
  • the structure of the transistor portion (TFT) is not limited to the embodiment shown in Fig. 4B.
  • a source electrode of the first transistor M1 (switching transistor) is connected to the data line 120, and a drain electrode thereof is connected to the first node N1.
  • the gate electrode of the first transistor is connected to the scan wiring 130.
  • the first transistor is turned on when a scan signal of a voltage capable of turning on the first transistor M1 from the scan line 130 is supplied to the data line 120 and the first node N1, Respectively. At this time, the data signal of the frame is supplied to the data line 120, and the data signal is transmitted to the first node N1.
  • the data signal transferred to the first node N1 is charged in the storage capacitor Cst.
  • the source electrode of the second transistor M2 (driving transistor) is connected to the first sub pixel power source ELVDD, and the drain electrode is connected to the first electrode of the light emitting cell.
  • the gate electrode of the second transistor M2 is connected to the first node N1.
  • the second transistor M2 controls the amount of the driving current supplied to the light emitting cells corresponding to the voltage of the first node N1.
  • One electrode of the storage capacitor Cst is connected to the first sub-pixel power source ELVDD and the other electrode is connected to the first node N1.
  • the storage capacitor Cst charges the voltage corresponding to the data signal supplied to the first node N1 and maintains the charged voltage until the data signal of the next frame is supplied.
  • a transistor portion (TFT) including two transistors is shown in Fig. 4B.
  • the present invention is not limited thereto, and the structure of the transistor portion (TFT) can be variously modified.
  • the transistor portion may include more transistors, capacitors, and the like.
  • the specific structure of the first and second transistors, the storage capacitor, and the wirings is not shown in this embodiment, the first and second transistors, the storage capacitor, and the wirings Can be provided in various forms within the limit.
  • FIG. 5A is a plan view showing one pixel of the display device shown in FIG. 2, and FIG. 5B is a cross-sectional view taken along the line I-I 'of FIG. 5A.
  • barrier ribs 220 for transmitting light are provided between the first to third light emitting cells 111P, 113P, and 115P.
  • the height of the first to third light emitting cells 111P, 113P, and 115P is lower than the height of the barrier ribs 220.
  • the distance between the barrier ribs 220 and the first to third light emitting cells 111P, 113P, and 115P is 10 ⁇ ⁇ to 20 ⁇ ⁇ or less.
  • the first to third light emitting cells 111P, 113P, and 115P may be collectively referred to as 'light emitting cells' for the contents commonly applied to all light emitting cells.
  • the minimum unit in which the bundles of the first to third light emitting cells 111P, 113P, and 115P and the white light can be formed is referred to as a 'pixel' or a 'light emitting device'.
  • the substrate 210 may include a wiring portion to supply power and a signal to the pixel 100.
  • a wiring portion and / or a transistor portion including scan wirings and data wirings connected to the pixel 100 may be formed on the substrate 210.
  • the substrate 210 may be a printed circuit board.
  • a wiring part connected to the pixel 100 may be provided on the printed circuit board, and a circuit such as a timing control part, a scan driving part, and a data driving part may be mounted.
  • the wiring portion may include pad portions 235a and 235b provided on the upper surface of the printed circuit board so as to be electrically connected to the pixel 100, and a printed circuit board And connecting portions 235ba and 235bb that penetrate the upper and lower surfaces of the base portion 235b. Electrodes 231 and 232 or wirings may be mounted on the lower surface of the printed circuit board and wirings of the pixel 100 may be mounted on the lower surface of the printed circuit board through the pad portions 235a and 235b and the connecting portions 235ba and 235bb. The electrodes 231 and 232, the wiring, and the like.
  • the substrate 210 may be otherwise provided as the pixel 100 may be mounted in addition to the printed circuit board.
  • the substrate 210 may have a wiring portion formed on an insulating substrate such as glass, quartz, plastic, or the like.
  • the circuits such as the timing controller, the scan driver, and the data driver may be formed directly on the insulating substrate, or may be provided on a separate printed circuit board or the like, and then connected to the wiring portion of the insulating substrate.
  • the substrate 210 may be made of a rigid material, but is not limited thereto and may be made of a flexible material.
  • the display device according to an embodiment of the present invention is implemented as a display device capable of being bent or warped, it may be advantageous that the substrate 210 is made of a flexible material.
  • the substrate 210 when the substrate 210 is formed of a material such as glass, quartz, or the like, the substrate 210 has a relatively higher heat resistance than the organic polymer substrate. If the substrate 210 is made of a transparent material such as glass or quartz, it may be advantageous to manufacture a front or back light display device. In the case where the substrate 210 is made of an organic polymer or an inorganic composite material, the substrate 210 may be relatively flexible and may be advantageous for manufacturing a curved display device.
  • At least one pixel 100 is mounted on the substrate 210 with a conductive adhesive layer interposed therebetween.
  • the pixel 100 is mounted on the sub pixel area of the substrate 210.
  • the pixel 100 includes a first light emitting cell 111P, a second light emitting cell 113P, and a third light emitting cell 115P.
  • Each light emitting cell 111P, 113P, and 115P is provided on the substrate 210 in a planar spaced-apart form.
  • the first to third light emitting cells 111P, 113P, and 115P can emit light of different wavelength bands. That is, if the light emitted from the first through third light emitting cells 111P, 113P, and 115P is referred to as first through third lights, respectively, the first through third lights may have different wavelength bands. In this embodiment, as described above, the first to third light may have wavelength bands of green, red, and blue, respectively.
  • the first to third light emitting cells 111, 113, Green, red, and blue light emitting diodes are examples of light emitting diodes.
  • the first to third light emitting cells 111P, 113P, and 115P may emit light of the same wavelength.
  • the first light emitting cell 111P emits light of a first wavelength
  • the second light emitting cell 113P and the third light emitting cell 115P emit light of a second wavelength that is different from the first wavelength
  • the wavelength converter 250 may be provided on the second or third light emitting cells 113P and 115P.
  • the wavelength converter 250 may convert the wavelength of the light emitted from the light emitting cell.
  • the ultraviolet light or the blue wavelength band light emitted from the second light emitting cell 113P may be transmitted through the wavelength converter 250 and converted into the light of the red wavelength band.
  • the user can obtain light of different wavelengths from the light emitting cells 111P, 113P, Can be admitted as if it had been released.
  • Each of the light emitting cells 111P, 113P, and 115P is mounted on the pad portions 235a and 235b provided on the upper surface of the substrate 210.
  • a conductive adhesive layer may be provided between the light emitting cells 111P, 113P, and 115P and the pad portions 235a and 235b to secure a stable electrical connection.
  • the conductive adhesive layer may be composed of a conductive paste such as solder paste, silver paste or the like or a conductive resin.
  • the pad portions 235a and 235b may be connected to the electrodes 231 and 232 provided on the back surface of the substrate 210 by connecting portions 235ba and 235bb passing through the substrate 210.
  • the electrodes 231 and 232 may include a common electrode 231 and a sub-pixel electrode 232.
  • the first through third light emitting cells 111P, 113P, and 115P provided in the pixel 100 may be connected to one common electrode 231.
  • a plurality of sub-pixel electrodes 232 may be provided, and each sub-pixel electrode 232 may correspond one-to-one with the first through third light emitting cells 111P, 113P, and 115P.
  • the wiring structure can be simplified by connecting the light emitting cells 111P, 113P, and 115P provided in one pixel 100 to the same common electrode 231. In the display device manufacturing process The efficiency can be improved.
  • the common electrode 231 is connected to one common electrode 231 of the plurality of light emitting cells 111P, 113P and 115P, the size of the common electrode 231 may be relatively larger than that of the sub pixel electrode 232.
  • the common electrode 231 and the sub-pixel electrode 232 may be connected to the data line and the scan line of the display device. Accordingly, the scan signal and the data signal can be transmitted to the light emitting cells 111P, 113P, and 115P through the common electrode 231 and the sub pixel electrode 232, respectively.
  • the common electrode 231 and the sub-pixel electrode 232 may be electrodes of different types.
  • the common electrode 231 is a p-type electrode
  • the sub-pixel electrode 232 can be an n-type electrode and vice versa.
  • the size of the common electrode 231 and the sub pixel electrode 232 may be larger than the sizes of the first terminal and the second terminal of the light emitting cell.
  • a barrier rib 220 is provided on the substrate 210. At this time, the barrier ribs 220 are provided between the first to third light emitting cells 111P, 113P, and 115P.
  • the barrier ribs 220 may be provided integrally with each other or may be provided separately from each other.
  • the barrier ribs provided between the first and second light emitting cells 111P and 113P and the barrier ribs provided between the second and third light emitting cells 113P and 115P are connected to each other Or may be separate.
  • barrier ribs 220 provided between the respective light emitting cells 111P, 113P, and 115P are integrally connected to each other will be described as an example.
  • the barrier rib 220 provided integrally includes a plurality of openings 221, 222, and 223 for each pixel 100.
  • the barrier ribs 220 are provided in such a manner that the light emitting cells 111P, 113P, and 115P are provided in the openings 221, 222, and 223.
  • the barrier rib 220 is an insulating layer made of a non-conductive material, and is a layer that does not transmit light.
  • the barrier ribs 220 may be formed of a light absorbing material.
  • the barrier ribs 220 may be provided in black, and may be made of, for example, a light shielding material used for a display device or the like.
  • the barrier ribs 220 may be formed from a composition in which a photo solder resist (PSR) and a light absorbing material are mixed.
  • PSR photo solder resist
  • the process of forming the barrier ribs 220 can be simplified. Specifically, by applying the composition at room temperature and photo-curing it, barrier ribs 220 can be formed without severe process conditions.
  • the photosensitive solder resist may comprise a photosensitive organic polymer.
  • Photosensitive organic polymers may be selected from the group consisting of polyethylene, polypropylene, polyvinylchloride, polystyrene, acrylonitrile-butadiene-styrene resin, methacrylate resin, polyamide ), Polycarbonate, Polyacetyl, Polyethylene terephthalate, Modified Polyphenylene Oxide, Polybutylen terephthalate, Polyurethane, Phenolic resin Phenolic resin, urea resin, melamine resin, and combinations thereof.
  • a photosensitive hardening agent may be further included in the composition for forming the barrier ribs 220 to assist the photo-curing reaction of the photosensitive solder resist (PSR).
  • the barrier ribs 220 may be formed using various materials in addition to the above-described materials.
  • the composition for forming the barrier rib 220 may be a mixture of polydimethylsiloxane (PDMS) and carbon particles.
  • the barrier rib 220 includes a light absorbing material and can absorb a part of the light emitted from the light emitting cells 111P, 113P, and 115P. Particularly, a part of the light emitted from the light emitting cells 111P, 113P, and 115P toward the adjacent light emitting cells 111P, 113P, and 115P can be absorbed by the barrier ribs 220.
  • light emitted from the different light emitting cells 111P, 113P, and 115P can be prevented from unnecessarily mixing colors. In addition, since unnecessary color mixing of light is prevented, the color combination of the visible light is the same even when the display device is viewed in any direction.
  • preventing unnecessary color mixing of light by the barrier rib 220 does not mean completely blocking color mixing of a plurality of lights emitted from one pixel 100.
  • one pixel 100 includes a plurality of light emitting cells 111P, 113P, and 115P and red light, blue light, and green light are emitted from each light emitting cell, the red light, the blue light, and the green light are mixed, .
  • the barrier ribs 220 prevent the white light from being visually recognized as a different color when the display device is viewed in a direction not perpendicular to the display device by mixing light with light from pixels unnecessarily adjacent to the display device.
  • the height of the barrier ribs 220 is greater than the height of the light emitting cells 111P, 113P, and 115P.
  • H2 is greater than the first height H1.
  • the first height H1 is a distance from the upper surface of the substrate 210 to the upper surface of the light emitting cells 111P, 113P, and 115P.
  • the first height H1 is a distance from the upper surface of the substrate 210 to the concave and convex ends of the upper surface of the light emitting cells 111P, 113P, and 115P, when concaves and convexes are provided on the upper surfaces of the light emitting cells 111P, It can be distance.
  • the second height H2 means a distance from the surface where the substrate 210 is in contact with the barrier rib 220 to the top surface of the barrier rib 220.
  • the second height H2 may be an average distance from the surface of the substrate 210 contacting the barrier 220 to the top surface of the barrier 220 when the thickness of the barrier 220 varies depending on the planar position .
  • the second height H2 may be from about 15 [mu] m to about 115 [mu] m.
  • the above numerical range is the height of the barrier rib 220 for preventing light emitted from the first to third light emitting cells 111P, 113P, and 115P from being unnecessarily mixed.
  • the second height H2 exceeds about 115 mu m, the amount of light emitted from the light emitting cells 111P, 113P, and 115P may be excessively reduced, or the thickness of the entire display device may become excessively large.
  • the second height H2 is less than about 15 mu m, unnecessary color mixing may occur between the light emitted from the light emitting cells 111P, 113P, and 115P.
  • the first height H1 may be different for each of the light emitting cells 111P, 113P, and 115P.
  • the second height H2 is larger than the first height H1
  • the second height H2 is larger than the first height H1 of certain light emitting cells 111P, 113P, and 115P.
  • the difference between the second height H2 and the first height H1 may be greater than 0 and less than or equal to about 100 ⁇ . If the difference between the second height H2 and the first height H1 is greater than about 100 mu m, mixing of light emitted from one pixel 100 is blocked and white light can be difficult to implement.
  • the first height H1 may be about 1 to about 20 microns. Accordingly, the thickness or the second height H2 of the barrier ribs 220 can be relatively small, and the thickness of the entire display device can be reduced.
  • the widths of the openings 221, 222 and 223 provided with the light emitting cells 111P, 113P and 115P may vary according to the light emitting cells 111P, 113P and 115P.
  • the sizes of the openings 221, 222, and 223 may be varied depending on sizes of the light emitting cells 111P, 113P, and 115P.
  • the widths of the openings 221, 222, and 223 are larger than the widths of the light emitting cells 111P, 113P, and 115P.
  • the light emitting cells 111P, 113P and 115P are arranged so as not to contact the side walls of the partition 220 forming the openings 221, 222 and 223 and the light emitting cells 111P, 113P and 115P.
  • the distance between the light emitting cells 111P, 113P, and 115P and the sidewalls of the openings 221, 222, and 223 may be about 10 mu m to about 20 mu m.
  • the numerical range is set so that the ratio of the area opened by the openings 221, 222, and 223 can be reduced while preventing the partition 220 from unnecessarily mixing light emitted from the light emitting cells 111P, 113P, and 115P have.
  • the area occupied by the barrier ribs 220 among the planar area of the display device may be about 50% to about 99% of the total area. As the area occupied by the barrier ribs 220 becomes relatively large, the contrast ratio of the display device can be improved.
  • the width of the light emitting cells 111P, 113P, and 115P may be 200 mu m or less.
  • the length of one side of the square may be about 200 mu m or less.
  • the light emitting cells 111P, 113P, and 115P have the sizes described above, it is possible to mount more light emitting cells 111P, 113P, and 115P in the same area. Thus, the resolution of the display device can be improved.
  • a wavelength converter 250 may further be provided on the light emitting cells 111P, 113P, and 115P.
  • the wavelength converter 250 may be provided only on some of the light emitting cells 111P, 113P, and 115P.
  • the wavelength converter 250 may be provided only on the second light emitting cell 113P.
  • the wavelength converter 250 provided in the second light emitting cell 113P converts the wavelength band of the light emitted from the second light emitting cell 113P.
  • the light after passing through the wavelength converter 250 can be viewed with a color different from that when the light is emitted from the second light emitting cell 113P.
  • the wavelength of the light after passing through the wavelength converter 250 may be different from the wavelength of the light emitted from the first light emitting cell 111P or the third light emitting cell 115P, to which the wavelength converter 250 is not provided.
  • the wavelength converter 250 can emit light having a wavelength longer than the wavelength of the absorbed light, in particular, after absorbing light having a relatively short wavelength.
  • the light emitted from the second light emitting cell 113P may be blue light, green light, ultraviolet light, or the like.
  • the blue light, the green light, or the ultraviolet light is converted into the red light by the wavelength converter 250.
  • the wavelength converter 250 may include a phosphor layer 251 and a color filter 252. Both the phosphor layer 251 and the color filter 252 function to convert the wavelength of the received light into a specific wavelength band.
  • the phosphor layer 251 and the color filter 252 may exhibit a difference in the wavelength band width of the light that is converted and emitted.
  • the color filter 252 may include a quantum dot material and convert the received light into light of a relatively narrow bandwidth. In comparison, the phosphor layer 251 can convert received light into light having a relatively wide bandwidth.
  • a red color filter 143 may further be provided.
  • the color filter 143 may be omitted and a higher purity color may be realized when the color filter 143 is provided.
  • the phosphor layer 251 may be provided in the form of filling the inside of the opening 222. Accordingly, the light emitted from the light emitting cell 113P can pass through the phosphor layer 251 before being visible to the user's eyes.
  • the phosphor layer 251 may be provided in a mixed form with PDMS (polydimethylsiloxane), PI (polyimide) or PMMA (poly (methyl 2-methylpropenoate)) together with a transparent or semitransparent binder such as ceramic.
  • PDMS polydimethylsiloxane
  • PI polyimide
  • PMMA poly (methyl 2-methylpropenoate)
  • the color filter 252 may be provided in a form separated from the light emitting cell 113P.
  • the width of the color filter 252 may be greater than the width of the opening 222. [ Accordingly, a part of the color filter layer 252 can overlap with the barrier rib 220 in a plane. As the color filter layer 252 has the above-described shape, the light emitted from the light emitting cell 113P can be prevented from being visible to the user without passing through the color filter 252, and at the same time, the structural stability can be improved.
  • the color filter 252 can increase the color purity of light. Specifically, the color filter 252 can block blue light or ultraviolet light that has not been completely converted by the phosphor layer 251. In addition, by blocking the light from the adjacent first and third light emitting cells 111P and 115P, the light emitted from the second light emitting cell 113P is prevented from mixing. Accordingly, according to an embodiment of the present invention, since the phosphor layer 251 and the color filter 252 are provided in the wavelength converter 250, the color purity can be further improved.
  • a protective layer 240 may be provided on the light emitting cells 111P and 115P and the barrier ribs 220.
  • the protective layer 240 fills the openings 221 and 223 in which the wavelength converter 250 is not provided and is provided in a form covering the surface of the barrier ribs 220.
  • the protective layer 240 is optically transparent. Accordingly, the light emitted from the light emitting cells 111P and 115P or emitted through the wavelength converter 250 can be maintained in optical characteristics even though the light passes through the protective layer 240.
  • the protective layer 240 may be formed of an optically transparent material.
  • the protective layer 240 may be formed of epoxy, polysiloxane, photoresist, or the like.
  • the polysiloxane material may be PDMS (polydimethylsiloxane).
  • the material of the protective layer 240 is not limited to the HSSQ (Hydrogen Silsesquioxane), MSSQ (Methyksilsesquioxane), polyimide, divinyl siloxane, DVS-BCS (Bis- Benzocyclobutane), PFCB (Perfluorocyclobutane ), PAE (Polyarylene Ether), or the like may be used.
  • the thickness of the protective layer 240 may be determined in consideration of the thickness of the entire display device of the substrate 210.
  • the protective layer 240 may be provided so that the distance from the back surface of the substrate 210 to the upper surface of the protective layer 240 is about 1 mm or less.
  • FIG. 6 is a cross-sectional view illustrating a light emitting cell according to an embodiment of the present invention.
  • the first to third light emitting cells 111P, 113P, and 115P include flip chip type light emitting diodes
  • FIG. 6 is a cross-sectional view schematically illustrating a flip chip type light emitting cell according to an embodiment of the present invention. 6 may be any one of the first through third light emitting cells 111P, 113P, and 115P. In this embodiment, the first light emitting cells 111P will be described as an example. In the following description, Emitting cell 111, as shown in FIG.
  • the light emitting cell 111 includes a first conductive semiconductor layer 1110, an active layer 1112, a second conductive semiconductor layer 1114, a first contact layer 1116, a second contact layer 1116, 1118, an insulating layer 1120, a first terminal 1122, and a second terminal 1124.
  • the first conductive semiconductor layer 1110, the active layer 1112, and the second conductive semiconductor layer 1114 may be collectively referred to as a semiconductor layer.
  • the type of the semiconductor layer may vary depending on the wavelength of light emitted from the light emitting cells.
  • the semiconductor layer indium gallium nitride (InGaN), gallium nitride (GaN), gallium phosphide (GaP), aluminum gallium indium phosphide (AlGaInP), and aluminum gallium phosphide AlGaP).
  • the semiconductor layer may include at least one of aluminum gallium arsenide (AlGaAs), gallium arsenide phosphide (GaAsP), aluminum gallium indium phosphide (AlGaInP ), And gallium phosphide (GaP).
  • AlGaAs aluminum gallium arsenide
  • GaAsP gallium arsenide phosphide
  • AlGaInP aluminum gallium indium phosphide
  • GaP gallium phosphide
  • the semiconductor layer may comprise gallium nitride (GaN), indium gallium nitride (InGaN), and zinc selenide (ZnSe).
  • the first conductivity type semiconductor layer 1110 and the second conductivity type semiconductor layer 1114 have opposite polarities.
  • the first conductivity type is n-type
  • the second conductivity type is p
  • the second conductivity type is n-type
  • the first semiconductor layer 1110 may be an n-type semiconductor layer 1110 and the second semiconductor layer 1114 may be a p-type semiconductor layer 1114 in an embodiment of the present invention.
  • an example in which the n-type semiconductor layer 1110, the active layer 1112, and the p-type semiconductor layer 1114 are sequentially formed will be described as an example.
  • the n-type semiconductor layer 1110, the active layer 1112 and the p-type semiconductor layer 1114 may be formed of a III-V nitride semiconductor, for example, a nitride semiconductor such as (Al, Ga, In) have.
  • the n-type semiconductor layer 1110, the active layer 1112, and the p-type semiconductor layer 1114 can be formed using a known method such as metalorganic chemical vapor deposition (MOCVD).
  • the p-type semiconductor layer 1114 includes a p-type impurity (for example, Mg, Sr, Ba) and an n-type semiconductor layer 1110.
  • the n-type semiconductor layer 1110 includes n-type impurities (e.g., Si, Ge, .
  • the n-type semiconductor layer 1110 may comprise GaN or AlGaN containing Si as a dopant and the p-type semiconductor layer 1114 may comprise GaN or AlGaN containing Mg as a dopant .
  • n-type semiconductor layer 1110 and the p-type semiconductor layer 1114 are shown as a single layer in the drawing, these layers may be multilayered and may also include a superlattice layer.
  • the active layer 1112 may include a single quantum well structure or a multiple quantum well structure, and the composition ratio of the nitride-based semiconductor is adjusted so as to emit a desired wavelength. For example, the active layer 1112 may emit blue light or ultraviolet light.
  • a first contact layer 1116 is disposed on the first conductivity type semiconductor layer 1110 where the active layer 1112 and the second conductivity type semiconductor layer 1114 are not provided and on the second conductivity type semiconductor layer 1114, 2 contact layer 1118 is disposed.
  • the first and / or second contact layers 1116 and 1118 may be comprised of a single layer, or a multilayer metal.
  • metals such as Al, Ti, Cr, Ni, and Au and alloys thereof may be used.
  • An insulating layer 1120 is provided on the first and second contact layers 1116 and 1118 and a first terminal 1122 is connected to the first contact layer 1116 through a contact hole on the insulating layer 1120, 2 contact layer 1118 and a second terminal 1124 connected through a contact hole.
  • the first terminal 1122 is connected to one of the first connection electrode 121 and the second connection electrode 123 via the second conductive adhesive layer 163 and the second terminal 1124 is connected to the second conductive adhesive layer 163 To the other one of the first connection electrode 121 and the second connection electrode 123 through the first connection electrode 121 and the second connection electrode 123, respectively.
  • the first and / or second terminals 1122 and 1124 may be comprised of a single layer, or a multilayer metal.
  • metals such as Al, Ti, Cr, Ni, and Au and alloys thereof may be used.
  • the light emitting cell is described with reference to the drawings simply, but the light emitting cell may further include a layer having an additional function in addition to the above-described layer.
  • a reflective layer that reflects light
  • an additional insulating layer to isolate certain components
  • a solder barrier that prevents diffusion of the solder, and the like.
  • the surface of the first conductivity type semiconductor layer 1110 or the n-type semiconductor layer 1110 may include irregularities. That is, irregularities may be included in a surface of the light emitting cell 111 on which light is emitted. By providing the unevenness, the light extraction efficiency can be improved.
  • the concavities and convexities may be provided in various forms such as a polygonal pyramid, a hemisphere, and a surface having a roughness, which are randomly arranged.
  • the first and second contact layers 1116 and 1118 and the first and second terminals 1122 and 1122 may be formed in various shapes in forming the flip chip type light emitting cell 111.
  • 1124 may also be varied in various ways.
  • the light emitting cell 111 may be a vertical or vertical light emitting cell.
  • the first conductivity type semiconductor layer 1110, the active layer 1112 and the second conductivity type semiconductor layer 1114 may be sequentially stacked even when the light emitting cell 111 is a vertical light emitting cell.
  • matters relating to the first conductivity type semiconductor layer 1110, the active layer 1112, and the second conductivity type semiconductor layer 1114 are as described in the description of the flip chip type light emitting cell 111.
  • 7A and 7B are plan views illustrating pixels according to an embodiment of the present invention.
  • the light impervious layer comprises a plurality of openings, each of which is provided with one light emitting cell.
  • the distance between the light emitting cells provided in the same pixel is shorter than the distance between the light emitting cells provided in the different light emitting cell pixels.
  • the distance between the light emitting cell and the opening sidewall is relatively smaller than the distance between the openings.
  • the distance between the different openings will be described.
  • the description about the inter-aperture distance may be applied equally to the distance between the light emitting cells.
  • the distance between the light non-transmissive layer side wall and the light emitting cell can be narrowed to 2 ⁇ or less, because it is a relatively short distance.
  • Each of the pixels 110, 110 ', 110 " is provided with first to third light emitting cells.
  • the first light emitting cell emits light of a first wavelength
  • the second light emitting cell emits light of a second wavelength different from the first wavelength
  • the third light emitting cell emits light of a third wavelength different from the first wavelength.
  • the second wavelength and the third wavelength may be the same depending on the case, and in this case, a wavelength converter is provided on at least one of the second light emitting cell or the third light emitting cell.
  • the first light emitting cells 221, 221 ', 221' ', and the second light emitting cells are formed in the first pixel 100, the second pixel 110' 222, 222 ', 222 "and third light emitting cells 223, 223, 223" may be provided and each pixel 110, 110', 110 " have.
  • the shortest distance between each of the openings 221, 222, and 223 located in the first pixel 100 is the shortest distance among the openings located in the pixels 110 'and 110 " Is shorter than the shortest distance to the adjacent opening.
  • the second distance D2 and the fourth distance D4 are smaller than the first distance D1 and the third distance D3.
  • the second distance D2 is a distance between the first opening 221 and the third opening 223 and the fourth distance D4 is a distance between the second opening 222 and the third opening 223 It says.
  • the first distance D1 is a distance between the third opening 223 of the first pixel 100 and the second opening 222 'of the second pixel 110'
  • the third distance D3 is a distance Refers to the distance between the third opening 223 of the first pixel 100 and the first opening 221 " of the third pixel 110 ".
  • the display device according to the present invention can emit high-purity white light, but does not have a problem in that the color varies depending on the viewing angle of the display device.
  • the first light emitting cells 221, 221 ', 221' ', and the second light emitting cells are formed in the first pixel 100, the second pixel 110' 222, 222 ', 222 "and third light emitting cells 223, 223, 223" are arranged.
  • the first light emitting cell to the third light emitting cell in each pixel 110, 110 ', 110 " are sequentially arranged along one direction, and the distance between the first light emitting cell and the second light emitting cell And the distance between the second light emitting cell and the third light emitting cell is smaller than the inter pixel distance.
  • the light emitting cells 223, 223, and 223 " may be arranged in a sequential manner.
  • the second distance D2 and the fourth distance D4 are smaller than the first distance D1 and the third distance D3.
  • the second distance D2 is the distance between the first opening 221 'and the second opening 222' of the second pixel 110 'and the fourth distance is the distance between the second opening 110' Refers to the distance between the second opening 222 'and the third opening 223'.
  • the first distance D1 is a distance between the second opening 222 of the first pixel 100 and the second opening 222 'of the second pixel 110'
  • the third distance D3 is a distance Refers to the distance between the second opening 222 'of the second pixel 110' and the second opening 222 '' of the third pixel 110 ".
  • the distance from the sidewall of the light non-permeable layer forming the opening to the light emitting cell is relatively smaller than the distance between the openings, the distance between the open apertures can be equally applied to the distance between the light emitting cells.
  • the display device according to the present invention can emit high-purity white light, but does not have a problem in that the color varies depending on the viewing angle of the display device.
  • the light emitting cell distance provided in the same pixel may vary depending on the type of light emitted from the light emitting cell.
  • the first light emitting cell when the first light emitting cell emits red light, the second light emitting cell emits green light, and the third light emitting cell emits blue light, the following distance relationship is established between the first light emitting cell and the third light emitting cell can do.
  • the distance between the first light emitting cell and the second light emitting cell may be the same as the distance between the first light emitting cell and the third light emitting cell.
  • the distance between the first light emitting cell and the second light emitting cell may be different from the distance between the second light emitting cell and the third light emitting cell.
  • the above-described distance relationship considers the characteristic of each light emitting cell that emits light of a different wavelength.
  • a display device having the above-described structure may be implemented in various forms within a scope not departing from the concept of the present invention.
  • 8A to 8D are cross-sectional views illustrating a display device according to an embodiment of the present invention.
  • a reflective layer 224 may be provided in the openings 221, 222, and 223.
  • the reflective layer 224 is provided in a form covering the sidewall of the partition wall 220 forming the opening 223.
  • the reflective layer 224 may be provided to cover a part of the substrate 210.
  • the reflective layer 224 and the light emitting cell 115P do not contact each other even when a part of the substrate 210 of the reflective layer 224 is covered in the embodiment of the present invention.
  • the distance between the sidewalls of each of the light emitting cells and the openings provided in the same pixel may be less than about 5 ⁇ ⁇ . In this case, since the reflection layer 224 reflects light, there is no fear that the light emitted from the light-emitting cells will pass through the barrier ribs 220.
  • the reflective layer 224 may include metals such as silver (Ag), aluminum (Al), copper (Cu), platinum (Pt), and gold (Au)
  • the thickness of the reflective layer 224 is relatively thin.
  • the reflective layer 224 may be formed using a variety of patterning methods after a thin film is formed using chemical vapor deposition (CVD), plasma chemical vapor deposition (PECVD), physical vapor deposition (PVD), atomic layer deposition (ALD) .
  • CVD chemical vapor deposition
  • PECVD plasma chemical vapor deposition
  • PVD physical vapor deposition
  • ALD atomic layer deposition
  • a light shield 260 and a diffusion plate 270 may be further provided on the protective layer 240.
  • the light shielding portion 260 can be provided so as not to overlap with the openings 221, 222 and 223 in the plan view and does not affect the total amount of light emitted from the light emitting cells 111P, 113P and 115P.
  • the light shielding portion 260 may be formed of a black light sensitive resist. When the light shielding portion 260 is made of a black light sensitive resist, patterning using photolithography is easy.
  • the material of the light-shielding portion 260 is not limited thereto and may be composed of various materials.
  • the light shielding portion 260 is provided to be spaced apart from the barrier ribs 220 to prevent unnecessary mixing of light emitted from the light emitting cells together with the barrier ribs 220.
  • the diffusion plate 270 refracts and diffuses the light emitted from the light emitting cells.
  • the viewing angle of the light emitted from the light emitting cells can be larger.
  • the diffusion plate 270 may be formed of one or more materials selected from the group consisting of HSSQ (Hydrogen Silsesquioxane), MSSQ (Methyksilsesquioxane), polyimide, divinyl siloxane, DVS-BCS (bis-Benzocyclobutane), PFCB (Perfluorocyclobutane) Polymethylmethacrylate (PDMS), and Polydimethylsiloxane (PDMS).
  • the openings 221, 222, and 223 have a shape that increases in width as the distance from the substrate 210 increases.
  • the lower width W2 of the opening 221 may be smaller than the upper width W1 of the opening 221.
  • the partition 220 provided between the openings 221, 222, and 223 may have a trapezoidal shape in which the cross section is inverted.
  • the width of the barrier rib 220 may increase as the distance from the substrate 210 increases.
  • the openings 221, 222, and 223 have the above-described shapes, it is possible to prevent unwanted color mixing of light emitted from the light emitting cells 111P, 113P, and 115P and to secure a wider viewing angle.
  • a window layer 280 is further provided on the diffusion plate 270.
  • the window layer 280 may comprise glass, acrylic, or the like, and is optically transparent.
  • the window layer 280 does not affect the optical properties of the light emitted from the light emitting cells.
  • the window layer 280 may have flexibility.
  • the window layer 280 can function as a support while protecting the light emitting cells and the like. Particularly, the barrier ribs 220 can be supported on the window layer 280.
  • the first to third light emitting cells 111P, 113P, and 115P are supported on the window layer 280.
  • a plurality of light emitting cells may be supported on the window layer 280.
  • One to 100 light emitting cells may be supported on one window layer 280.
  • wavelength converters 250, 250 'and 250' ' are provided on the first to third light emitting cells 111P, 113P and 115P.
  • the first to third light emitting cells 111P, 113P, and 115P can emit light having the same wavelength.
  • the semiconductor layers of the first to third light emitting cells 111P, 113P, and 115P may include aluminum gallium indium nitride (AlGaInN).
  • wavelength converters 250, 250 ', and 250' ' are provided on the respective light emitting cells. These wavelength converters 250, 250 ', 250' 'receive the light emitted from the light emitting cells and convert them into different wavelengths. Accordingly, red light, blue light, and green light can be emitted from one pixel.
  • the first to third light emitting cells may be configured in various forms to facilitate mounting and replacement and to operate with optimal light emitting efficiency.
  • terms such as " first ", " second ", " third ", and the like can be given to components other than those in the above-
  • FIG. 9 is a schematic plan view for explaining a pixel 100 according to an embodiment of the present invention
  • FIG. 10 is a schematic cross-sectional view taken along a perforated line A-A in FIG.
  • a pixel 100 that is, a light emitting device includes a substrate 21, a first light emitting cell 30a, a second light emitting cell 30b, a third light emitting cell 30c, a transparent electrode layer A first wavelength converter 51a, a second wavelength converter 51b, a third wavelength converter 51c, a first color filter 53a, a second color filter 53b, A third color filter 53c, and a barrier 55 (or barrier).
  • the first to third light emitting cells 30a, 30b and 30c include a first conductive semiconductor layer 23, an active layer 25 and a second conductive semiconductor layer 27, respectively.
  • the pixel 100 includes the sub-pixels 10B, 10G and 10R and the sub-pixels 10B, 10G and 10R are connected to the light emitting cells 30a, 30b and 30c, the wavelength converters 51a and 51b , 51c, and color filters 53a, 53b, 53c.
  • the substrate 21 is not particularly limited as long as it is a substrate capable of growing a gallium nitride-based semiconductor layer.
  • the substrate 21 include a sapphire substrate, a gallium nitride substrate, a SiC substrate, and the like, and may be a patterned sapphire substrate.
  • the substrate 21 may have a rectangular or square shape as shown in the plan view of FIG. 9, but is not limited thereto.
  • the size of the substrate 21 can be determined according to the required pixel size. For example, the length of the long side of the substrate 21 may be 400um or less, and may be 100um or less.
  • the first to third light emitting cells 30a, 30b, and 30c are spaced apart from each other. As shown in FIG. 9, the first to third light emitting cells 30a, 30b, and 30c have different areas.
  • the second light emitting cell 30b has a larger area than the first light emitting cell 30a and the third light emitting cell 30c has a larger area than the second light emitting cell 30b.
  • the areas of the first to third light emitting cells 30a, 30b and 30c can be determined in consideration of the light conversion efficiency of the wavelength converters 51a, 51b and 51c, which will be described later.
  • the first to third light emitting cells 30a, 30b, and 30c may be disposed adjacent to each other. That is, the first light emitting cell 30a is adjacent to the second and third light emitting cells 30b and 30c, the second light emitting cell 30b is adjacent to the first and third light emitting cells 30a and 30c, The third light emitting cell 30c may be adjacent to the first light emitting cell 30a and the second light emitting cell 30b. As shown in FIG. 9, the first and second light emitting cells 30a and 30b may be arranged along the long axis of the third light emitting cell 30c. However, the present invention is not limited thereto, and may be variously arranged in other forms. For example, one light emitting cell may be disposed between two different light emitting cells. Also, the first to third light emitting cells 30a, 30b, and 30c may have a rectangular shape, but are not limited thereto and may have various shapes.
  • the first to third light emitting cells 30a, 30b and 30c include a first conductive semiconductor layer 23, an active layer 25 and a second conductive semiconductor layer 27, respectively.
  • the first conductive type semiconductor layer 23 is disposed on the substrate 21.
  • the first conductivity type semiconductor layer 23 may be a layer grown on the substrate 21 and may be a gallium nitride based semiconductor layer doped with an impurity such as Si.
  • the active layer 25 and the second conductivity type semiconductor layer 27 are disposed on the first conductivity type semiconductor layer 23.
  • the active layer 25 is disposed between the first conductivity type semiconductor layer 23 and the second conductivity type semiconductor layer 27.
  • the active layer 25 and the second conductivity type semiconductor layer 27 may have a smaller area than the first conductivity type semiconductor layer 23.
  • the active layer 25 and the second conductivity type semiconductor layer 27 may be partially removed and a portion of the first conductivity type semiconductor layer 23 may be exposed.
  • the active layer 25 may have a single quantum well structure or a multiple quantum well structure.
  • the composition and thickness of the well layer in the active layer 25 determine the wavelength of the generated light.
  • by controlling the composition of the well layer it is possible to provide an active layer that generates ultraviolet light or blue light.
  • the active layers 25 of the first, second and third light emitting cells 30a, 30b and 30c are grown on the same substrate 21 under the same conditions, And thus, emits light of the same wavelength.
  • the second conductivity type semiconductor layer 27 may be a p-type impurity, for example, a gallium nitride based semiconductor layer doped with Mg.
  • the first conductive semiconductor layer 23 and the second conductive semiconductor layer 27 may each be a single layer, the present invention is not limited thereto, and may be a multiple layer or a superlattice layer.
  • the first conductivity type semiconductor layer 23, the active layer 25 and the second conductivity type semiconductor layer 27 are formed by a known method such as metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) And may be formed on the substrate 21 by growing.
  • MOCVD metal organic chemical vapor deposition
  • MBE molecular beam epitaxy
  • the transparent electrode layer 31 is disposed on the second conductivity type semiconductor layer 27 and is in ohmic contact with the second conductivity type semiconductor layer 27.
  • the transparent electrode layer 31 may include, for example, Ni / Au, ITO, or ZnO.
  • the first pad 33a and the second pad 33b are disposed on the first through third light emitting cells 30a, 30b, and 30c, respectively.
  • the first pads 33a and the second pads 33b may be disposed near the edge of the substrate 21 as shown in Fig. 9, so that when mounted on a circuit board or the like, easy to do.
  • the first pad 33a is electrically connected to the first conductivity type semiconductor layer 23 and the first pad 33b is electrically connected to the second conductivity type semiconductor layer 27.
  • the first pad 33a may be disposed on the first conductive semiconductor layer 23 exposed by partially removing the second conductive semiconductor layer 27 and the active layer 25 and may be disposed on the second pad 33b, May be disposed on the transparent electrode layer 31.
  • the first wavelength converter 51a is disposed on the first light emitting cell 30a and the second wavelength converter 51b is disposed on the second light emitting cell 30b and the third wavelength converter 51c is disposed on the third Emitting cell 30c.
  • the first to third wavelength converters 51a, 51b, and 51c may be positioned on the transparent electrode layer 31, respectively.
  • the first wavelength converter 51a converts the wavelength of the light emitted from the first light emitting cell 30a and the second wavelength converter 51b converts the wavelength of the light emitted from the second light emitting cell 30b,
  • the converter 51c converts the wavelength of the light emitted from the third light emitting cell 30c.
  • the second wavelength converter 51b converts light to a wavelength longer than that of the first wavelength converter 51a
  • the third wavelength converter 51c converts light to a wavelength longer than that of the second wavelength converter 51b.
  • the first to third light emitting cells 30a, 30b, and 30c may emit ultraviolet rays
  • the first wavelength converter 51a converts ultraviolet light into blue light
  • the second wavelength converter 51b The ultraviolet light is converted into green light
  • the third wavelength converter 51c is capable of converting ultraviolet light into red light.
  • the first color filter 53a, the second color filter 53b and the third color filter 53c are disposed on the first to third wavelength converters 51a, 51b and 51c, respectively, And filters the light.
  • the first color filter 53a filters light other than blue light
  • the second color filter 53b filters light other than green light
  • the third color filter 53c filters light other than red light do.
  • the active layer 25 emits ultraviolet rays.
  • the active layer 25 may emit blue light.
  • the first wavelength converter 51a may be omitted, and a transparent resin may be disposed instead of the first wavelength converter 51a.
  • the second wavelength converter 51b converts blue light into green light
  • the third wavelength converter 51c converts blue light into red light.
  • the barrier ribs 55 are disposed between the first to third light emitting cells 30a, 30b, and 30c.
  • the barrier 55 may also surround each light emitting cell.
  • the barrier ribs 55 may also be disposed between the wavelength converters 51a, 51b and 51c.
  • the barrier ribs 55 prevent the light emitted from one light emitting cell from progressing toward the other light emitting cell to prevent optical interference between the sub pixels 10B, 10G and 10R.
  • the barrier ribs 55 may fill an area between the light emitting cells, but are not limited thereto.
  • the barrier ribs 55 may be formed of a white resin or a photosensitive solder resist capable of reflecting light.
  • the pixel of this embodiment has three sub-pixels 10B, 10G, and 10R, and these sub-pixels are fixed on the substrate 21.
  • the sub-pixel 10B implements blue light by the light-emitting cell 10a or by the combination of the first light-emitting cell 10a and the first wavelength converter 51a
  • the sub- The green light is realized by the combination of the light emitting cell 10b and the second wavelength converter 51b and the sub pixel 10R realizes the red light by the combination of the third light emitting cell 10c and the third wavelength converter 51c .
  • the three sub-pixels 10B, 10G and 10R together with the substrate 21 can be mounted together on a circuit board or the like.
  • the conventional micro LED since the individual sub-pixels are mounted, the number of steps is large and the mounting process is difficult to perform.
  • one pixel since one pixel includes three sub-pixels and is implemented as one light emitting device, the size of the light emitting device is relatively larger than that of the micro LED, so that the number of mounting processes is reduced, .
  • the first to third light emitting cells 30a, 30b, and 30c occupy different areas.
  • the wavelength converters 51a, 51b, and 51c disposed on these light emitting cells occupy different areas.
  • the relative area of the light emitting cells is closely related to the light conversion efficiency of the wavelength converters, and furthermore the color filtering efficiency of the color filters 53a, 53b, 53c may also be related.
  • Wavelength converters may generally include phosphors.
  • beta sialon SiAlON
  • CASN CaAlSiN based phosphor
  • the phosphor does not convert all blue light into green light or red light, and has a constant light conversion efficiency depending on each phosphor.
  • a red phosphor that converts ultraviolet light or blue light of the same wavelength to red light has a smaller light conversion efficiency than a green phosphor that converts green light.
  • the second light emitting cell 30b of the sub pixel 10G that emits green light must also be driven at a higher current density than the first light emitting cell 30a. That is, the current density required for a typical image is different for each light emitting cell, and thus the first to third light emitting cells 30a, 30b, and 30c can not be driven with optimal light emitting efficiency conditions Lt; / RTI >
  • the first to third light emitting cells 30a, 30b, and 30c are different in area so that the current density for driving the light emitting cells is the same or similar, .
  • the relative area of the first through third light emitting cells 30a, 30b, and 30c may be determined in consideration of the relative photo-conversion efficiency of the first through third wavelength converters 51a, 51b, and 51c. The smaller the light conversion efficiency of the wavelength converter, the larger the area of the corresponding light emitting cell.
  • the first to third light emitting cells 30a, 30b, and 30c emit blue light
  • the first wavelength converter 51a is omitted
  • the second light emitting cells 30a The area ratio of the third light emitting cell 30b and the third light emitting cell 30c may be inversely proportional to the light conversion efficiency of the second wavelength converter 51b and the light conversion efficiency of the third wavelength converter 51c.
  • the second wavelength converter 51b includes beta sialon
  • the third wavelength converter includes CASN
  • the first light emitting cell 30a, the second light emitting cell 30b, (30c) may be 1: 2: 7.
  • the area ratio of the second light emitting cell 30b and the third light emitting cell 30c to the first light emitting cell 30a May be inversely proportional to the light conversion efficiency ratio of the second wavelength converter 51b and the light conversion efficiency ratio of the third wavelength converter 51c to the first wavelength converter 51a.
  • the determination of the area of the light emitting cells in consideration of the light conversion efficiency of the wavelength converters will be described.
  • the filtering efficiencies of the first to third color filters 53a, 53b, and 53c are different from each other, It is possible to determine the area of the light emitting cells.
  • the areas of the first to third light emitting cells 30a, 30b, and 30c are different from each other, and these light emitting cells can be driven under the same current density. Therefore, the current density for driving the light emitting cells can be set to the optimal condition, and the luminous efficiency can be improved.
  • FIG. 11 is a schematic plan view for explaining a light emitting device 200 according to another embodiment of the present invention
  • FIG. 12 is a schematic cross-sectional view taken along a perforated line B-B of FIG.
  • the light emitting device 200 according to the present embodiment is substantially similar to the light emitting device 100 described with reference to FIGS. 9 and 10, except that the first through third light emitting cells 30a, 30b and 30c share the first conductivity type semiconductor layer 23.
  • the first pad 33a is formed on the shared first conductive semiconductor layer 23, so that the number of the first pads 33a can be reduced compared with the previous embodiment, can do.
  • the extension portion 33c can extend from the first pad 33a.
  • the extension portion 33c can extend to a region between the light emitting cells.
  • the extended portion 33c may be disposed to surround each light emitting cell, but may be disposed at a part of the edge of each light emitting cell as shown in FIG.
  • the extension can be disposed adjacent to the edges away from the one edge, so that current is concentrated in a specific portion of the light- It is possible to improve the light efficiency.
  • FIG. 13 is a schematic plan view for explaining a light emitting device 300 according to another embodiment of the present invention
  • FIG. 14 is a schematic cross-sectional view taken along a perforated line CC in FIG. 13
  • FIG. 15 is a cross- Sectional view taken along line II-II of FIG.
  • the light emitting device 300 includes a light emitting device 300 having a light emitting cell having a horizontal structure in that each of the light emitting cells 30a, 30b, and 30c has a vertical structure 100 or 200).
  • the light emitting device 300 includes a support substrate 121, a first light emitting cell 30a, a second light emitting cell 30b, a third light emitting cell 30c, an antireflection layer 131, pads A second wavelength converter 51b, a third wavelength converter 51c, a first color filter 53a, a second color filter 53b, a third color filter 53c, A first insulating layer 35, a first electrode 39, a second electrode 36, a second insulating layer 37, a protective metal layer 41, and a bonding metal layer 45, .
  • the first to third light emitting cells 30a, 30b and 30c include a first conductive semiconductor layer 23, an active layer 25 and a second conductive semiconductor layer 27, respectively.
  • the sub-pixels 10B, 10G and 10R include the light emitting cells 30a, 30b and 30c, the wavelength converters 51a and 51b, 51b, and 51c, and color filters 53a, 53b, and 53c.
  • the support substrate 121 is a secondary substrate separated from a growth substrate for growing compound semiconductor layers and attached to the already grown compound semiconductor layers.
  • the support substrate 51 may be a conductive substrate such as a metal substrate or a semiconductor substrate.
  • the first conductivity type semiconductor layer 23, the active layer 25 and the second conductivity type semiconductor layer 27 are formed on the same growth substrate as the above-described substrate 21 in order to form the light emitting cells 30a, 30b, After the support substrate 121 is then attached, the growth substrate is removed using a stripping technique such as a laser lift-off or a chemical lift-off.
  • the first to third light emitting cells 30a, 30b, and 30c are substantially similar to the light emitting cells described above, but are arranged to emit light toward the first conductivity type semiconductor layer 23 side.
  • the light emitting cells 30a, 30b and 30c are provided with a through hole 30h or a groove for exposing the first conductivity type semiconductor layer 23 through the second conductivity type semiconductor layer 27 and the active layer 25 Lt; / RTI >
  • the first conductive type semiconductor layer 23, the active layer 25, and the second conductive type semiconductor layer 27 are similar to those described in the previous embodiment, so that detailed description is omitted to avoid duplication.
  • a roughness may be formed on the surface of the first conductivity type semiconductor layer 23, and the antireflection layer 131 may cover the roughness.
  • the antireflection layer 131 may also cover the side surfaces of the light emitting cells 30a, 30b, and 30c.
  • the roughness may be formed using a wet etching technique such as a light enhanced chemical etching, and the antireflection layer 131 may be formed using an atomic layer deposition technique.
  • the antireflection layer 131 may have a layered structure of SiO2 / Al2O3 / SiO2, for example, and may be formed along the roughness terrain.
  • the first insulating layer 35 is positioned between the first to third light emitting cells 30a, 30b, and 30c and the support substrate 121. As shown in FIG. The first insulating layer 35 may cover the side surfaces of the active layer 25 exposed in the through holes 30h and the side surfaces of the second conductivity type semiconductor layer 27. [ On the other hand, the insulating layer 35 exposes the lower surface of the second conductivity type semiconductor layer 27.
  • the first insulating layer 35 may be a single layer or multiple layers of a silicon oxide film or a silicon nitride film, or may include a distributed Bragg reflector in which insulating layers having different refractive indices are repeatedly laminated. If the insulating layer 35 comprises a distributed Bragg reflector, the insulating layer 35 may also include an interface layer between the distributed Bragg reflector and the second conductive type semiconductor layer 27.
  • the insulating layer 35 is, for example SiO 2, MgF 2, TiO 2 or may include Nb 2 O 5, the one example, SiO 2 or MgF 2 on the interface layer is TiO2 / SiO2 or Nb2O5 / SiO2 repeat laminate And may include a distributed Bragg reflector.
  • the second electrode 36 may include an ohmic reflective layer 32 and a barrier metal layer 34.
  • the ohmic reflective layer 32 ohmically contacts the second conductive semiconductor layer 27 exposed through the openings of the insulating layer 35.
  • the ohmic reflective layer 32 may be in contact with the insulating layer 35, but the edge of the ohmic reflective layer 32 may be spaced from the insulating layer 35 as shown in the figure.
  • the ohmic reflective layer 32 may include a reflective layer, such as Ag, and may include a metal layer for ohmic contact, such as Ni.
  • the ohmic reflective layer 32 is located within the lower region of the second conductivity type semiconductor layer 27.
  • the barrier metal layer 34 is located between the ohmic reflective layer 32 and the support substrate 51 and covers the ohmic reflective layer 32.
  • the barrier metal layer 34 prevents migration of a metal material, such as Ag, of the ohmic reflective layer 32.
  • the barrier metal layer 34 may cover the side surface of the OMR reflective layer 32 but the barrier metal layer 34 may be disposed on the OMR reflective layer 32 such that the side surface of the OMR reflective layer 32 is exposed, It is possible. By exposing the side surface of the OMR reflective layer 32, the OMR reflective layer 32 can be formed in a relatively large area, thereby reducing the contact resistance and lowering the forward voltage.
  • the barrier metal layer 35 may comprise, for example, Pt, Ni, Ti, W, Au, or an alloy thereof.
  • the barrier metal layer 34 may also cover the insulating layer 35 inside the embedded portions of the light emitting cells 30a, 30b and 30c and may be electrically connected to the pad 33b formed in the embedded portion .
  • the second insulating layer 37 covers the barrier metal layer 34 under the barrier metal layer 34.
  • the second insulating layer 37 may cover the entire bottom surface of the barrier metal layer 34. Further, the second insulating layer 37 may cover the side surface of the barrier metal layer 34 to prevent the side surface of the barrier metal layer 34 from being exposed to the outside.
  • the second insulating layer 37 may be a single layer or a multilayer of a silicon oxide film or a silicon nitride film or may include a distributed Bragg reflector in which insulating layers having different refractive indices such as SiO2 / TiO2 or SiO2 / Nb2O5 are repeatedly laminated have. If the second insulating layer 37 comprises a distributed Bragg reflector, the second insulating layer 37 may also include an interface layer between the distributed Bragg reflector and the first insulating layer 31.
  • the first insulating layer 37 may include, for example, SiO 2 , MgF 2 , TiO 2, or Nb 2 O 5. For example, TiO 2 / SiO 2 or Nb 2 O 5 / SiO 2 may be repeatedly formed on the SiO 2 or MgF 2 interface layer Stacked distributed Bragg reflectors.
  • the first electrode 39 is located between the second insulating layer 37 and the supporting substrate 51 and is electrically connected to the first conductive semiconductor layer 31 through the first insulating layer 35 and the second insulating layer 37. [ (23). The first electrode 39 is disposed between the second electrode 34 and the supporting substrate 51 and the first electrode 39 is formed on the first conductive semiconductor layer 23 exposed through the through hole 30h Can be connected. Further, the first electrode 39 is insulated from the active layer 25 and the second conductivity type semiconductor layer 27 by the first insulating layer 35 and the second insulating layer 37.
  • the first electrode 39 may include an ohmic layer that makes an ohmic contact with the first conductive semiconductor layer 23, and may include a reflective metal layer.
  • the first electrode 39 may include Cr / Au, and may further include Ti / Ni.
  • the protective metal layer 41 may cover the bottom surface of the first electrode 39.
  • the protective metal layer 41 protects the first electrode 39 by preventing diffusion of a metallic material such as Sn from the bonding metal layer 45.
  • the protective metal layer 41 may include Au, for example, and may further include Ti and Ni.
  • the protective metal layer 41 can be formed, for example, by repeatedly laminating Ti / Ni a plurality of times and then stacking Au.
  • the support substrate 121 may be bonded onto the protective metal layer 41 through the bonding metal layer 45.
  • the bonding metal layer 45 may be formed using AuSn or NiSn, for example.
  • the support substrate 121 may be formed on the protective metal layer 41 using, for example, a plating technique.
  • the support substrate 121 is a conductive substrate, it may function as a pad. Accordingly, the first conductivity type semiconductor layers 23 of the first to third light emitting cells 30a, 30b, and 30c are electrically connected to each other, and the support substrate 121 is used as a common electrode.
  • Each of the light emitting cells 30a, 30b and 30c may have a depressed portion in which a first conductivity type semiconductor layer 23, an active layer 25 and a second conductivity type semiconductor layer 27 are removed at one corner portion
  • pads 133b may be disposed within the recesses and electrically connected to the barrier metal layer 34, respectively.
  • the first to third wavelength converters 51a to 51c and the first to third color filters 53a to 53b are disposed on the first to third light emitting cells 30a to 30c Thereby forming sub-pixels 10B, 10G and 10R.
  • the first to third wavelength converters 51a, 51b, and 51c and the first to third color filters 53a, 53b, and 53 are similar to those described above with reference to FIGS. 9 and 10, The description is omitted.
  • the wavelength converters 51a, 51b and 51c are disposed on the side of the second conductivity type semiconductor layer 27 in the above embodiments, the light emitting cells 30a, 30b and 30c are formed in the vertical type
  • the first to third wavelength converters 51a to 51c and the first to third color filters 53a to 53b are disposed on the first conductivity type semiconductor layer 23 side.
  • the barrier ribs 55 are disposed in the region between the light emitting cells 30a, 30b, and 30c, and may surround the light emitting cells.
  • the partition 55 may also surround the side of the pad 133b.
  • the barrier rib 55 may be a white resin or a photosensitive solder resist having a light reflecting function as described above.
  • the first to third light emitting cells 30a, 30b, and 30c occupy different areas, which are similar to those described with reference to FIGS. 9 and 10, do.
  • FIG. 16 is a schematic plan view for explaining a light emitting device 400 according to another embodiment of the present invention
  • FIG. 17 is a schematic sectional view taken along a perforated line E-E in FIG.
  • the light emitting device 400 according to the present embodiment differs from the light emitting device of the previous embodiments in that it has a flip structure.
  • the light emitting device 400 includes a substrate 21, first to third light emitting cells, an ohmic reflective layer 231, a first insulating layer 233, The first wavelength converter 51a, the second wavelength converter 51b, the third wavelength converter 51c, the first color filter 53a, the second color filter 53a, A second color filter 53b, a third color filter 53c, and a partition 55 (or partition).
  • the first to third light emitting cells 30a, 30b and 30c include a first conductive semiconductor layer 23, an active layer 25 and a second conductive semiconductor layer 27, respectively.
  • the light emitting device 400 includes the sub pixels 10B, 10G and 10R and the sub pixels 10B, 10G and 10R are connected to the light emitting cells 30, the wavelength converters 51a, 51b and 51c, And color filters 53a, 53b, and 53c.
  • the substrate 21 is as described with reference to FIGS. 9 and 10, detailed description is omitted.
  • the first conductivity type semiconductor layer 23, the active layer 25, and the second conductivity type semiconductor layer 27 are similar to those of the above-described embodiments, and a detailed description thereof will be omitted.
  • the light emitting cells are disposed under the substrate 21 and the light emitting cells expose the first conductivity type semiconductor layer 23 through the second conductivity type semiconductor layer 27 and the active layer 25.
  • the area and stacking structure of the light emitting cells are similar to those of the first to third light emitting cells 30a, 30b, and 30c described in the previous embodiments, and thus their detailed description is omitted.
  • the ohmic reflective layer 231 is in ohmic contact with the second conductivity type semiconductor layer 27 of each light emitting cell.
  • the ohmic reflective layer 231 may include an ohmic layer and a reflective layer, for example, an ohmic layer such as Ni or ITO, and a reflective layer such as Ag or Al.
  • the ohmic reflective layer 231 may also include an insulating layer such as SiO2 between the transparent oxide layer such as ITO and the reflective layer, and the reflective layer may be connected to the transparent oxide layer through the insulating layer.
  • the first insulating layer 233 covers the light emitting cells and covers the side surfaces of the exposed second conductive semiconductor layer 27 and the active layer 25.
  • the first insulating layer 233 has openings for exposing the first conductive semiconductor layer 23 and the ohmic reflective layer 231.
  • the first insulating layer 233 may be formed of a single layer such as SiO 2 or Si 3 N 4, but is not limited thereto, and may be formed of multiple layers.
  • the first insulating layer 233 may comprise a distributed Bragg reflector.
  • a first pad electrode 235a and a second pad electrode 235b are disposed on the first insulating layer 233.
  • the first pad electrode 235a and the second pad electrode 235b are disposed on each light emitting cell and the first pad electrode 235a is electrically connected to the first conductivity type semiconductor layer 23,
  • the electrode 235b is electrically connected to the ohmic reflective layer 231.
  • the first pad electrode 235a and the second pad electrode 235b may be formed together in the same process and therefore may be located at the same level. In certain embodiments, the second pad electrode 235b may be omitted.
  • the second insulating layer 237 covers the first and second pad electrodes 235a and 235b and has openings for exposing the first and second pad electrodes 235a and 235b.
  • the second insulating layer 237 may be formed of a single layer such as SiO2 or Si3N4, but is not limited thereto and may be formed of multiple layers.
  • the first insulating layer 233 may comprise a distributed Bragg reflector.
  • the first and second bump pads 243a and 243b are formed on the respective light emitting cells and connected to the first and second pad electrodes 235a and 235b through openings of the second insulating layer 237 do. Specifically, the first bump pad 243a is connected to the first pad electrode 235a, and the second bump pad 243b is connected to the second pad electrode 235b.
  • the bump pads 243a and 243b occupy a relatively large area compared to the pads of the above-described embodiments, and the maximum width of the bump pads 243a and 243b exceeds at least 1/2 of the minimum width of the light emitting cells can do.
  • the bump pads 243a and 243b may have a rectangular shape as shown, but not limited thereto, and may have a circular or elliptical shape.
  • the bump pads 243a and 243b may include Au or AuSn.
  • a dummy bump pad 243c may be disposed on at least one light emitting cell.
  • the dummy bump pads 243c can be disposed in the light emitting cells having a relatively large area.
  • the dummy bump pad 243c can be used as a heat dissipation path for emitting heat generated in the light emitting cells, thereby improving the light efficiency of the light emitting device.
  • the support member 245 may cover the side surfaces of the bump pads 243a and 243b.
  • the support member 245 may also cover the side surface of the dummy bump pad 243c.
  • the support member 245 may be formed of a thermosetting or thermoplastic resin.
  • the first to third wavelength converters 51a, 51b and 51c are arranged on the substrate 21 in opposition to the light emitting cells.
  • the first to third wavelength converters 51a, 51b and 51c are disposed on the corresponding light emitting cells.
  • the first to third color filters 53a, 53b, and 53c are disposed on the first to third wavelength converters 51a, 51b, and 51c, respectively. Since the first to third wavelength converters 51a, 51b, and 51c and the first to third color filters 53a, 53b, and 53c are similar to those described above, a detailed description thereof will be omitted.
  • the barrier ribs 55 may be positioned between the wavelength converters 51a, 51b, and 51c.
  • the barrier ribs 55 may be formed of a white resin or a photosensitive solder resist.
  • the barrier ribs 55 are disposed between the light emitting cells 30a, 30b and 30c in the above embodiments, the barrier ribs 55 are disposed on the substrate 21 in this embodiment , No barrier ribs 55 are formed in the region between the light emitting cells.
  • the first insulating layer 233 may include a distributed Bragg reflector, or the first pad electrode 235a and / or the second pad electrode 235b may be disposed so as to cover the sidewalls of the light emitting cells, It is possible to prevent the optical interference of the light-
  • the light emitting efficiency of each light emitting cell can be improved.
  • the light emitting cells have different areas, and the area of the light emitting cells is determined in consideration of the light conversion efficiency of the wavelength converter as described above.
  • FIG. 18 is a schematic cross-sectional view for explaining a light emitting device 500 according to another embodiment of the present invention.
  • the light emitting device 500 is substantially similar to the light emitting device described with reference to FIGS. 16 and 17, except that the substrate 21 is omitted.
  • the first to third wavelength converters 51a, 51b and 51c are disposed on the light emitting cells instead of being disposed on the substrate 21.
  • a roughness may be formed on the surface of the first conductivity type semiconductor layer 23, and an antireflection layer may be formed on the surface of the first conductivity type semiconductor layer 23 .
  • the light emitting cells can be supported by the support member 245.
  • optical interference between adjacent sub-pixels 10B, 10G, and 10R can be blocked.
  • 19A and 19B are sectional views for explaining a film including a wavelength converter.
  • the first to third wavelength converters 51a, 51b, and 51c are separated from each other and attached to the light emitting cells 30a, 30b, and 30c, respectively, However, in this embodiment, the first to third wavelength converters 51a, 51b and 51c are arranged in one layer in one film. Transparent or opaque resin 151 may be disposed in the region between the wavelength converters 51a 51b and 51c.
  • the first wavelength converter 51a when the light emitting cells emit blue light, the first wavelength converter 51a may be omitted.
  • the transparent resin 151 may be located at the position of the first wavelength converter 51a have.
  • the film according to the present embodiment is a laminated film of several layers, for example, the first layer 151a includes a first wavelength converter 51a, and the second layer 151b includes a second wavelength Converter 51b, and the third layer 151c may include a third wavelength converter 51c.
  • Each of the first to third layers may be composed of a combination of a transparent resin 151 and a wavelength converter.
  • the first layer 151a may be omitted.
  • 20 is a schematic plan view for explaining a display device according to an embodiment of the present invention.
  • a display device includes a circuit board 150 and a light emitting device 100 arranged on the circuit board 150.
  • the light emitting device 100 includes the first to third sub pixels 10B, 10G, and 10R as the light emitting device described with reference to FIGS. 9 and 10, and includes pads 33a and 33b.
  • Circuit board 150 has circuit wiring for supplying current to pads 33a and 33b on pixel 100 and pads 33a and 33b are electrically connected to circuitry on circuit board 150.
  • the pads 33a and 33b may be electrically connected to the circuit board 150 using bonding wires.
  • the pixel 100 includes three sub-pixels, which can implement blue light, green light and red light, respectively. Therefore, each pixel 100 constitutes one pixel, and an image can be implemented using these light emitting elements 100.
  • the pixel 100 is described as being arranged on the circuit board 150 in the present embodiment, the light emitting elements 200, 300, 400, or 500 may be arranged, and various light emitting elements may be used in combination .
  • the light emitting device may be mounted on the circuit board using Au-Au bonding or AuSN bonding in addition to the bonding wire corresponding to the structure of the light emitting cells.
  • 21 is a perspective view showing a display device according to an embodiment of the present invention.
  • the display device 1000 may include a plurality of modules DM.
  • Each module DM may include a sub-display 100 'and a support 200.
  • the sub-display device 100 ' is provided with a plurality of pixels, which include a plurality of light-emitting diodes as described above.
  • one pixel may be provided with a red light emitting cell for emitting red light, a blue light emitting cell for emitting blue light, and a green light emitting cell for emitting green light.
  • a plurality of such light emitting diodes are provided, and a plurality of pixels can be supported by the same support 200.
  • the display device 1000 is provided with a plurality of modules DM, and thus the display device 1000 can be enlarged.

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  • Electroluminescent Light Sources (AREA)

Abstract

A light emitting device according to one embodiment comprises: a first light emitting cell, a second light emitting cell, and a third light emitting cell, each of which includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; pads electrically connected to the first to third light emitting cells so as to independently drive the first to third light emitting cells; a second wavelength converter for converting a wavelength of light emitted from the second light emitting cell; and a third wavelength converter for converting a wavelength of light emitted from the third light emitting cell, wherein the third wavelength converter converts the wavelength of light to a wavelength longer than that of the second wavelength converter, the second light emitting cell has a larger area than that of the first light emitting cell, and the third light emitting cell has a larger area than that of the second light emitting cell.

Description

발광 소자 및 그것을 갖는 표시 장치 Light emitting device and display device
본 발명은 발광 소자 및 그것을 갖는 표시 장치에 관한 것이다.The present invention relates to a light emitting device and a display device having the same.
발광 소자 중 발광 다이오드는 무기 광원으로서, 표시 장치, 차량용 램프, 일반 조명과 같은 여러 분야에 다양하게 이용되고 있다. 발광 다이오드는 수명이 길고, 소비 전력이 낮으며, 응답속도가 빠른 장점이 있어 기존 광원을 빠르게 대체하고 있다.Light emitting diodes among light emitting devices are inorganic light sources, and they are widely used in various fields such as display devices, automotive lamps, and general lighting. Light emitting diodes are rapidly replacing existing light sources because they have a long lifetime, low power consumption, and fast response time.
한편, 종래의 발광 다이오드는 표시 장치에서 백라이트 광원으로 주로 사용되어 왔다. 그러나 최근 발광 다이오드를 이용하여 직접 이미지를 구현하는 차세대 표시 장치로서 마이크로 LED가 개발되고 있다.On the other hand, a conventional light emitting diode has been mainly used as a backlight light source in a display device. Recently, however, a micro LED has been developed as a next-generation display device that implements a direct image using a light emitting diode.
표시 장치는 일반적으로 청색, 녹색 및 적색의 혼합색을 이용하여 다양한 색상을 구현한다. 표시 장치의 각 화소는 청색, 녹색 및 적색의 서브 화소를 구비하며, 이들 서브 화소들의 색상을 통해 특정 픽셀의 색상이 정해지고, 이들 픽셀들의 조합에 의해 이미지가 구현된다.The display device generally uses various colors of blue, green, and red to realize various colors. Each pixel of the display device has blue, green and red sub-pixels, and the color of the specific pixel is determined through the color of these sub-pixels, and the image is realized by the combination of these pixels.
마이크로 LED 표시 장치의 경우, 각 서브 화소에 대응하여 마이크로 LED가 배치되며, 이에 따라, 하나의 기판 상에 수많은 개수의 마이크로 LED가 배치될 필요가 있다. 그런데 마이크로 LED는 그 크기가 200 마이크로미터 이하 나아가 100 마이크로 이하의 크기로 대단히 작으며, 이러한 작은 크기로 인해 다양한 문제점이 발생된다. 특히, 작은 크기의 발광 다이오드를 핸들링하는 것이 어려워 패널 상에 발광 다이오드를 실장하는 것이 용이하지 않으며, 또한, 실장된 마이크로 LED들 중 불량 LED를 양품의 LED로 교체하는 것도 어렵다.In the case of a micro LED display device, a micro LED is arranged corresponding to each sub-pixel, so that a large number of micro LEDs must be arranged on one substrate. However, the size of the micro LED is very small, which is less than 200 micrometers and less than 100 micrometers, and this small size causes various problems. Particularly, it is difficult to handle a light emitting diode of a small size, so it is not easy to mount a light emitting diode on a panel, and it is also difficult to replace a defective LED among mounted micro LEDs with a good LED.
한편, 발광 다이오드는 일반적으로 자외선 또는 청색광을 방출하며, 형광체와 조합하여 녹색광 및 적색광을 구현할 수 있다. 또한, 각 색상의 순도를 향상시키기 위해 서브 화소마다 색 필터가 사용되는데, 색 필터도 필터 효율에 차이가 있다. 이에 따라, 동일한 발광 다이오드를 동작하여 동일한 세기의 광을 방출하더라도 청색 서브 화소, 녹색 서브 화소 및 적색 서브 화소의 광 세기에 차이가 발생된다. 이러한 차이를 극복하기 위해 각 발광 다이오드의 동작 전류 밀도를 변화시킬 수 있으나, 전류 밀도 변화에 따른 발광 다이오드의 발광 효율 감소가 발생될 수 있다.On the other hand, the light emitting diode generally emits ultraviolet light or blue light, and can realize green light and red light in combination with the phosphor. In order to improve the purity of each color, a color filter is used for each sub-pixel. Accordingly, even when the same light emitting diode is operated and light of the same intensity is emitted, a difference in light intensity occurs between the blue sub-pixel, the green sub-pixel and the red sub-pixel. In order to overcome such a difference, it is possible to change the operating current density of each light emitting diode. However, the light emitting efficiency of the light emitting diode may be reduced according to the change of the current density.
본 발명이 해결하고자 하는 과제는, 실장 및 교체가 용이한 발광 다이오드 및 그것을 갖는 표시 장치를 제공하는 것이다.A problem to be solved by the present invention is to provide a light emitting diode which is easy to mount and replace and a display device having the same.
본 발명이 해결하고자 하는 다른 과제는, 각 서브 화소의 발광 다이오드들을 최적의 발광 효율로 동작할 수 있는 발광 다이오드 및 그것을 갖는 표시 장치를 제공하는 것이다. Another object of the present invention is to provide a light emitting diode capable of operating light emitting diodes of each sub-pixel with optimal light emitting efficiency and a display device having the light emitting diode.
본 발명이 해결하고자 하는 또 다른 과제는, 색순도 및 색재현성이 높은 표시 장치를 제공하는 것이다.Another object of the present invention is to provide a display device having high color purity and high color reproducibility.
본 발명의 일 실시예에 따른 발광 소자는, 각각 제1 도전형 반도체층, 활성층 및 제2 도전형 반도체층을 포함하는 제1 발광셀, 제2 발광셀 및 제3 발광셀; 상기 제1 내지 제3 발광셀들을 독립적으로 구동할 수 있도록 상기 제1 내지 제3 발광셀들에 전기적으로 접속된 패드들; 상기 제2 발광셀에서 방출된 광의 파장을 변환하는 제2 파장변환기; 및 상기 제3 발광셀에서 방출된 광의 파장을 변환하는 제3 파장변환기를 포함하되, 상기 제3 파장변환기는 상기 제2 파장변환기보다 더 장파장으로 광의 파장을 변환하고, 상기 제2 발광셀은 상기 제1 발광셀보다 더 큰 면적을 가지며, 상기 제3 발광셀은 상기 제2 발광셀보다 더 큰 면적을 가진다.A light emitting device according to an embodiment of the present invention includes a first light emitting cell, a second light emitting cell, and a third light emitting cell including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, respectively; Pads electrically connected to the first through third light emitting cells to independently drive the first through third light emitting cells; A second wavelength converter for converting a wavelength of light emitted from the second light emitting cell; And a third wavelength converter for converting a wavelength of light emitted from the third light emitting cell, wherein the third wavelength converter converts the wavelength of light to a wavelength longer than that of the second wavelength converter, The third light emitting cell has a larger area than the first light emitting cell, and the third light emitting cell has a larger area than the second light emitting cell.
본 발명의 일 실시예에 있어서, 상기 제1 내지 제3 발광셀은 청색광을 방출하며, 상기 제2 파장변환기는 상기 청색광을 녹색광으로 변환하고, 상기 제3 파장변환기는 상기 청색광을 적색광으로 변환할 수 있다.In one embodiment of the present invention, the first to third light emitting cells emit blue light, the second wavelength converter converts the blue light into green light, and the third wavelength converter converts the blue light into red light .
본 발명의 일 실시예에 있어서, 상기 제1 발광셀에 대한 제2 발광셀 및 제3 발광셀의 면적비는 각각 상기 제2 파장변환기의 광 변환 효율 및 상기 제3 파장변환기의 광 변환 효율에 반비례할 수 있다.In one embodiment of the present invention, the area ratio of the second light emitting cell and the third light emitting cell to the first light emitting cell is inversely proportional to the light conversion efficiency of the second wavelength converter and the light conversion efficiency of the third wavelength converter, can do.
본 발명의 일 실시예에 있어서, 발광 소자는 상기 제1 발광셀에서 방출된 광의 파장을 제1 파장의 광으로 변환하는 제1 파장변환기를 더 포함하되, 상기 제1 파장변환기는 상기 제2 파장변환기보다 더 단파장으로 광의 파장을 변환하고, 상기 제1 내지 제3 발광셀은 자외선을 방출할 수 있다.In one embodiment of the present invention, the light emitting device further includes a first wavelength converter for converting the wavelength of the light emitted from the first light emitting cell into light of the first wavelength, wherein the first wavelength converter converts the second wavelength The wavelength of the light is changed to a shorter wavelength than the converter, and the first to third light emitting cells can emit ultraviolet rays.
본 발명의 일 실시예에 있어서, 상기 제1 파장변환기는 자외선을 청색광으로 변환하고, 상기 제2 파장변환기는 상기 자외선을 녹색광으로 변환하고, 상기 제3 파장변환기는 상기 자외선을 적색광으로 변환할 수 있다.In one embodiment of the present invention, the first wavelength converter converts ultraviolet light into blue light, the second wavelength converter converts the ultraviolet light into green light, and the third wavelength converter converts the ultraviolet light into red light have.
본 발명의 일 실시예에 있어서, 상기 제1 발광셀에 대한 제2 발광셀 및 제3 발광셀의 면적비는 각각 상기 제1 파장변환기에 대한 상기 제2 파장변환기의 광 변환 효율비 및 상기 제3 파장변환기의 광 변환 효율비에 반비례할 수 있다.In one embodiment of the present invention, the area ratio of the second light emitting cell and the third light emitting cell with respect to the first light emitting cell may be set such that the ratio of the light conversion efficiency of the second wavelength converter to the first wavelength converter, And may be inversely proportional to the light conversion efficiency ratio of the wavelength converter.
본 발명의 일 실시예에 있어서, 발광 소자는 상기 제1 파장변환기 상에 배치된 제1 컬러 필터; 상기 제2 파장변환기 상에 배치된 제2 컬러 필터; 및 상기 제3 파장변환기 상에 배치된 제3 컬러 필터를 더 포함할 수 있다.In one embodiment of the present invention, the light emitting device comprises: a first color filter disposed on the first wavelength converter; A second color filter disposed on the second wavelength converter; And a third color filter disposed on the third wavelength converter.
본 발명의 일 실시예에 있어서, 발광 소자는 상기 제2 파장변환기 상에 배치된 제2 컬러 필터; 및 상기 제3 파장변환기 상에 배치된 제3 컬러 필터를 더 포함할 수 있다.In one embodiment of the present invention, the light emitting device comprises a second color filter disposed on the second wavelength converter; And a third color filter disposed on the third wavelength converter.
본 발명의 일 실시예에 있어서, 발광 소자는 상기 제1 내지 제3 발광셀이 배치된 기판을 더 포함할 수 있다. In one embodiment of the present invention, the light emitting device may further include a substrate on which the first to third light emitting cells are disposed.
본 발명의 일 실시예에 있어서, 상기 제1 발광셀 내지 상기 제3 발광셀 사이 각각에 제공되며, 상기 광을 비투과하는 격벽을 포함하고, 상기 제1 발광셀 내지 상기 제3 발광셀의 높이는 상기 격벽의 높이보다 낮고, 상기 격벽과 상기 제1 발광셀 내지 상기 제3 발광셀간 거리는 10㎛ 내지 20㎛ 일 수 있다.In an exemplary embodiment of the present invention, the first light emitting cell to the third light emitting cell may include a barrier provided between the first light emitting cell and the third light emitting cell, And the distance between the barrier ribs and the first light emitting cell to the third light emitting cell may be 10 占 퐉 to 20 占 퐉.
본 발명의 일 실시예에 있어서, 상기 제1 발광셀 내지 상기 제3 발광셀 사이에 제공된 상기 격벽은 서로 연결될 수 있다.In an embodiment of the present invention, the barrier ribs provided between the first light emitting cell and the third light emitting cell may be connected to each other.
본 발명의 일 실시예에 있어서, 상기 격벽의 폭은 상기 기판으로부터 멀어짐에 따라 증가할 수 있다.In one embodiment of the present invention, the width of the partition wall may increase as the distance from the substrate increases.
본 발명의 일 실시예에 있어서, 상기 기판의 평면상 면적 중 상기 격벽이 차지하는 면적의 비는 0.5 내지 0.99일 수 있다.In an embodiment of the present invention, the ratio of the area occupied by the barrier ribs to the area of the planar surface of the substrate may be 0.5 to 0.99.
본 발명의 일 실시예에 있어서, 상기 격벽의 높이는 15㎛ 내지 115㎛일 수 있다.In an embodiment of the present invention, the height of the barrier rib may be 15 to 115 탆.
본 발명의 일 실시예에 있어서, 상기 제1 발광셀은 적색광을 출사하고, 상기 제2 발광셀은 녹색광을 출사하고, 상기 제3 발광셀은 청색광을 출사하고, 상기 제1 발광셀과 상기 제2 발광셀간 거리는 상기 제1 발광셀과 상기 제3 발광셀간 거리와 동일할 수 있다. 본 발명의 일 실시예에 있어서, 상기 제1 발광셀과 상기 제2 발광셀간 거리는 상기 제2 발광셀과 상기 제3 발광셀간 거리와 상이할 수 있다.In one embodiment of the present invention, the first light emitting cell emits red light, the second light emitting cell emits green light, the third light emitting cell emits blue light, and the first light emitting cell and the second light emitting cell The distance between the two light emitting cells may be the same as the distance between the first light emitting cell and the third light emitting cell. In an embodiment of the present invention, the distance between the first light emitting cell and the second light emitting cell may be different from the distance between the second light emitting cell and the third light emitting cell.
본 발명의 일 실시예에 있어서, 상기 제1 발광셀 내지 상기 제3 발광셀은 하나의 발광 소자 내에 제공되고, 일 화소에 제공된 상기 제1 발광셀 내지 상기 제3 발광셀간 거리는, 상기 일 화소에 제공된 상기 제1 발광셀 내지 상기 제3 발광셀과 상기 일 화소와 인접한 화소에 제공된 제1 발광셀 내지 제3 발광셀간 거리보다 짧을 수 있다.In one embodiment of the present invention, the first light emitting cell to the third light emitting cell are provided in one light emitting element, and the first light emitting cell to the third light emitting cell distance provided to one pixel is May be shorter than a distance between the first light emitting cell to the third light emitting cell provided for the provided first light emitting cell to the third light emitting cell and the pixel adjacent to the one pixel.
본 발명의 일 실시예에 있어서, 상기 제1 발광셀 내지 상기 제3 발광셀은 삼각형 형태로 배치될 수 있으며, 또는 상기 제1 발광셀 내지 상기 제3 발광셀은 일자형 형태로 배치될 수 있다.In one embodiment of the present invention, the first light emitting cell to the third light emitting cell may be arranged in a triangular shape, or the first light emitting cell to the third light emitting cell may be arranged in a straight line.
본 발명의 일 실시예에 있어서, 상기 제1 내지 제3 발광셀은 제1 도전형 반도체층을 공유할 수 있다. In one embodiment of the present invention, the first to third light emitting cells may share a first conductive type semiconductor layer.
본 발명의 일 실시예에 있어서, 발광 소자는 상기 패드들 중 상기 공유된 제1 도전형 반도체층에 전기적으로 접속된 패드에서 연장하는 연장부를 더 포함할 수 있다.In one embodiment of the present invention, the light emitting device may further include an extension extending from a pad electrically connected to the shared first conductive semiconductor layer among the pads.
본 발명의 일 실시예에 있어서, 상기 제2 파장변환기와 상기 제3 파장변환기는 동일 필름 내에 위치할 수 있다.In an embodiment of the present invention, the second wavelength converter and the third wavelength converter may be located in the same film.
본 발명의 일 실시예에 있어서, 상기 제2 파장변환기와 상기 제3 파장변환기는 적층 필름 내에 위치하되, 상기 제2 파장변환기와 상기 제3 파장변환기는 서로 다른 층 내에 위치할 수 있다.In one embodiment of the present invention, the second wavelength converter and the third wavelength converter are located within the laminated film, and the second wavelength converter and the third wavelength converter may be located in different layers.
본 발명의 일 실시예에 있어서, 발광 소자는 기판; 상기 기판 상에 제공되고, 적색광, 녹색광, 및 청색광을 출사하는 제1 발광셀, 제2 발광셀, 및 제3 발광셀; 상기 제1 발광셀 내지 상기 제3 발광셀 사이 각각에 제공되며, 상기 광을 비투과하는 격벽을 포함하고, 상기 제1 발광셀 내지 상기 제3 발광셀의 높이는 상기 격벽의 높이보다 낮고, 상기 격벽과 상기 제1 발광셀 내지 상기 제3 발광셀간 거리는 5㎛이하일 수 있다.In one embodiment of the present invention, the light emitting device comprises a substrate; A first light emitting cell, a second light emitting cell, and a third light emitting cell provided on the substrate and emitting red light, green light, and blue light; Wherein each of the first to third light emitting cells has a height lower than a height of the barrier ribs, and the height of the first to third light emitting cells is lower than the height of the barrier ribs, The distance between the first light emitting cell and the third light emitting cell may be 5 탆 or less.
본 발명의 발광 소자는 표시 장치에 채용될 수 있으며, 표시 장치는 회로 기판, 및 상기 회로 기판 상에 배열된 복수의 화소를 포함하되, 상기 복수의 화소 각각은 앞의 일 실시예에 따른 발광 소자일 수 있다.The light emitting device of the present invention may be employed in a display device, and the display device includes a circuit board and a plurality of pixels arranged on the circuit board, wherein each of the plurality of pixels includes a light emitting element Lt; / RTI >
본 발명의 실시예들에 따르면, 제1 내지 제3 발광셀을 포함하여 서로 다른 색상의 광을 방출하는 서브 화소들을 하나의 발광 다이오드 내에 배치할 수 있어 실장 및 교체가 용이한 발광 다이오드를 제공할 수 있다. 나아가, 제1 내지 제3 발광셀의 면적을 다르게 함으로써 각 서브 화소의 발광셀들을 최적의 발광 효율로 동작시킬 수 있다.According to embodiments of the present invention, a sub-pixel including first to third light emitting cells and emitting light of different colors can be disposed in one light emitting diode, thereby providing a light emitting diode that can be easily mounted and replaced . Further, by varying the areas of the first to third light emitting cells, the light emitting cells of each sub-pixel can be operated with the optimal light emitting efficiency.
이에 더해, 본 발명의 일 실시예에 따르면 색순도 및 색재현성이 높은 표시 장치를 제공한다.In addition, according to an embodiment of the present invention, a display device having high color purity and high color reproducibility is provided.
도 1은 본 발명의 일 실시예에 따른 표시 장치의 평면도이다.1 is a plan view of a display device according to an embodiment of the present invention.
도 2는 도 1의 P1 부분을 도시한 확대 평면도이다.2 is an enlarged plan view showing a portion P1 in Fig.
도 3는 본 발명의 일 실시예에 의한 표시 장치를 나타내는 구조도이다. 3 is a structural view illustrating a display device according to an embodiment of the present invention.
도 4a는 서브 화소를 나타내는 회로도로서, 패시브형 표시 장치를 구성하는 화소의 일례를 도시한 회로도이다.4A is a circuit diagram showing a sub-pixel, and is a circuit diagram showing an example of pixels constituting a passive display device.
도 4b는 서브 화소를 나타내는 회로도로서, 액티브형 표시 장치를 구성하는 화소의 일례를 도시한 회로도이다. 4B is a circuit diagram showing a sub-pixel, and is a circuit diagram showing an example of pixels constituting an active display device.
도 5a는 도 2에 도시된 표시 장치에 있어서, 하나의 화소를 도시한 평면도이다.FIG. 5A is a plan view showing one pixel in the display device shown in FIG. 2. FIG.
도 5b는 도 5a의 Ⅰ-Ⅰ'선에 따른 단면도이다.5B is a cross-sectional view taken along line I-I 'of FIG. 5A.
도 6은 본 발명의 일 실시예에 따른 발광셀을 도시한 단면도이다.6 is a cross-sectional view illustrating a light emitting cell according to an embodiment of the present invention.
도 7a 및 도 7b는 본 발명의 일 실시예에 따른 화소를 도시한 평면도이다.7A and 7B are plan views illustrating pixels according to an embodiment of the present invention.
도 8a 내지 도 8d는 본 발명의 일 실시예에 따른 표시 장치를 도시한 단면도이다.8A to 8D are cross-sectional views illustrating a display device according to an embodiment of the present invention.
도 9은 본 발명의 일 실시예에 따른 발광 소자를 설명하기 위한 개략적인 평면도이다.9 is a schematic plan view illustrating a light emitting device according to an embodiment of the present invention.
도 10는 도 9의 절취선 A-A를 따라 취해진 개략적인 단면도이다.10 is a schematic cross-sectional view taken along section line A-A in Fig.
도 11은 본 발명의 또 다른 실시예에 따른 발광 소자를 설명하기 위한 개략적인 평면도이다.11 is a schematic plan view illustrating a light emitting device according to another embodiment of the present invention.
도 12는 도 11의 절취선 B-B를 따라 취해진 개략적인 단면도이다.12 is a schematic cross-sectional view taken along the perforated line B-B in Fig.
도 13는 본 발명의 또 다른 실시예에 따른 화소를 설명하기 위한 개략적인 평면도이다.13 is a schematic plan view for explaining a pixel according to another embodiment of the present invention.
도 14은 도 13의 절취선 C-C를 따라 취해진 개략적인 단면도이다.14 is a schematic cross-sectional view taken along the perforated line C-C in Fig.
도 15은 도 13의 절취선 D-D를 따라 취해진 개략적인 확대 단면도이다.15 is a schematic enlarged cross-sectional view taken along the perforated line D-D in Fig.
도 16은 본 발명의 또 다른 실시예에 따른 화소를 설명하기 위한 개략적인 평면도이다.16 is a schematic plan view for explaining a pixel according to another embodiment of the present invention.
도 17는 도 16의 절취선 E-E를 따라 취해진 개략적인 단면도이다.17 is a schematic cross-sectional view taken along the percutaneous line E-E in Fig.
도 18은 본 발명의 또 다른 실시예에 따른 화소를 설명하기 위한 개략적인 단면도이다.18 is a schematic cross-sectional view for explaining a pixel according to another embodiment of the present invention.
도 19a 및 도 19b는 파장변환기를 포함하는 필름을 설명하기 위한 단면도들이다.19A and 19B are sectional views for explaining a film including a wavelength converter.
도 20는 본 발명의 일 실시예에 따른 표시 장치를 설명하기 위한 개략적인 평면도이다.20 is a schematic plan view for explaining a display device according to an embodiment of the present invention.
도 21은 본 발명의 일 실시예에 따른 표시 장치를 도시한 사시도이다.21 is a perspective view showing a display device according to an embodiment of the present invention.
이하, 첨부한 도면들을 참조하여 본 발명의 실시예들을 상세히 설명한다. 다음에 소개되는 실시예들은 본 발명이 속하는 기술분야의 통상의 기술자에게 본 발명의 사상이 충분히 전달될 수 있도록 하기 위해 예로서 제공되는 것이다. 따라서, 본 발명은 이하 설명되는 실시예들에 한정되지 않고 다른 형태로 구체화될 수도 있다. 그리고 도면들에 있어서, 구성요소의 폭, 길이, 두께 등은 편의를 위하여 과장되어 표현될 수도 있다. 또한, 하나의 구성요소가 다른 구성요소의 "상부에" 또는 "상에" 있다고 기재된 경우 각 부분이 다른 부분의 "바로 상부" 또는 "바로 상에" 있는 경우뿐만 아니라 각 구성요소와 다른 구성요소 사이에 또 다른 구성요소가 개재된 경우도 포함한다. 명세서 전체에 걸쳐서 동일한 참조번호들은 동일한 구성요소들을 나타낸다.Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that those skilled in the art can sufficiently convey the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, etc. of components may be exaggerated for convenience. It is also to be understood that when an element is referred to as being " above " or " above " another element, But also includes the case where another component is interposed between the two. Like reference numerals designate like elements throughout the specification.
본 발명의 실시예는 광을 출사하는 발광 소자에 관한 것으로서, 다양한 장치에서 광원으로서 사용될 수 있으며, 특히, 표시 장치에 채용되어 화소로 기능할 수 있다. 이하에서는 먼저 표시 장치를 설명하고, 표시 장치에 채용된 화소로서의 발광 소자의 실시예를 도면을 참조하여 순차적으로 설명한다. 그러나, 본 발명의 일 실시예에 따른 발광 소자는 표시 장치에만 사용되는 것은 아니며, 필요에 따라 다른 장치에도 광원으로서 채용될 수 있음이 고려되어야 할 것이다.An embodiment of the present invention relates to a light emitting device that emits light and can be used as a light source in various devices, and in particular, can be employed in a display device to function as a pixel. Hereinafter, first, a display device will be described, and an embodiment of a light emitting element as a pixel employed in a display device will be described in sequence with reference to the drawings. However, it should be considered that the light emitting device according to an embodiment of the present invention is not only used for a display device, but may be employed as a light source in other devices as needed.
도 1은 본 발명의 일 실시예에 따른 표시 장치의 평면도이며, 도 2는 도 1의 P1 부분을 도시한 확대 평면도이다.FIG. 1 is a plan view of a display device according to an embodiment of the present invention, and FIG. 2 is an enlarged plan view showing a portion P1 in FIG.
도 1 및 도 2를 참조하면, 본 발명의 일 실시예에 따른 표시 장치(10)는 임의의 시각 정보, 예를 들어, 텍스트, 비디오, 사진, 2차원 또는 3차원 영상 등을 표시한다. Referring to FIGS. 1 and 2, a display device 10 according to an embodiment of the present invention displays arbitrary time information, for example, text, video, photograph, two-dimensional or three-dimensional image, and the like.
표시 장치(10)는 다양한 형상으로 제공될 수 있는 바, 직사각형과 같은 직선의 변을 포함하는 닫힌 형태의 다각형, 곡선으로 이루어진 변을 포함하는 원, 타원, 등, 직선과 곡선으로 이루어진 변을 포함하는 반원, 반타원, 등 다양한 형상으로 제공될 수 있다. 본 발명의 일 실시예에 있어서는, 상기 표시 장치가 직사각 형상으로 제공된 것을 도시하였다.The display device 10 may be provided in various shapes, including a closed polygon including sides of a straight line such as a rectangle, a circle including sides made of a curved line, an ellipse, etc., and straight and curved sides Semicircular, semi-elliptical, and other shapes. In one embodiment of the present invention, the display device is provided in a rectangular shape.
표시 장치(10)는 영상을 표시하는 복수의 화소들(100)을 갖는다. 화소들(100) 각각은 영상을 표시하는 최소 단위이다. 각 화소(100)는 백색광 및/또는 컬러광을 낼 수 있다. 각 화소(100)는 하나의 컬러를 내는 하나의 서브 화소를 포함할 수도 있으나, 서로 다른 컬러가 조합되어 백색광 및/또는 컬러광을 낼 수 있도록 서로 다른 서브 화소를 복수 개 포함할 수도 있다. The display device 10 has a plurality of pixels 100 for displaying an image. Each of the pixels 100 is a minimum unit for displaying an image. Each pixel 100 can emit white light and / or color light. Each pixel 100 may include one sub-pixel that emits one color, but may include a plurality of different sub-pixels so that different colors may be combined to emit white light and / or color light.
각 화소(100)는 발광 소자로 구현될 수 있는 바, 이하에서 발광 소자라는 용어는, 하나의 화소를 구현하는 데 사용될 수 있다는 점을 고려하여 화소와 실질적으로 동일한 의미로 사용되기도 한다.Each pixel 100 may be embodied as a light emitting element. Hereinafter, the term light emitting element is used in substantially the same meaning as a pixel in consideration of the fact that it can be used to implement one pixel.
본 실시예에 있어서, 각 화소(100)는 복수 개의 발광 셀, 또는 복수 개의 발광 셀과 발광 셀로부터의 광을 변환하기 위한 다른 구성요소로 구현되는 서브 화소들을 포함할 수 있다. 복수 개의 발광 셀은 예를 들어, 제1 내지 제3 발광셀(111P, 113P, 115P)로 구현될 수 있다. In the present embodiment, each pixel 100 may include a plurality of light emitting cells, or sub-pixels implemented with a plurality of light emitting cells and other components for converting light from the light emitting cells. The plurality of light emitting cells may be implemented as first through third light emitting cells 111P, 113P, and 115P, for example.
본 발명의 일 실시예에 있어서, 각 화소는 녹색광을 출사하는 발광셀(G), 적색광을 출사하는 발광셀(R), 및 청색광을 출사하는 발광셀(B)를 포함할 수 있으며, 제1 내지 제3 발광셀(111P, 113P, 115P)는 녹색광을 출사하는 발광셀(G), 적색광을 출사하는 발광셀(R), 및 청색광을 출사하는 발광셀(B)에 대응할 수 있다. 그러나, 각 화소(100)가 포함할 수 있는 발광셀은 이에 한정되는 것은 아니다. 예를 들어, 각 화소(100)는 시안, 마젠타, 옐로우 광 등을 출사하는 발광셀을 포함할 수 도 있는 바, 각 화소가 녹색광을 출사하는 녹색 발광셀(G), 적색광을 출사하는 적색 발광셀(R), 및 청색광을 출사하는 청색 발광셀(B)를 포함할 수 있다.In one embodiment of the present invention, each pixel may include a light emitting cell G for emitting green light, a light emitting cell R for emitting red light, and a light emitting cell B for emitting blue light, The third to fourth light emitting cells 111P, 113P and 115P may correspond to the light emitting cell G for emitting green light, the light emitting cell R for emitting red light, and the light emitting cell B for emitting blue light. However, the light emitting cells that each pixel 100 can include are not limited thereto. For example, each pixel 100 may include a light emitting cell that emits cyan, magenta, yellow light, etc., and each pixel includes a green light emitting cell (G) emitting green light, a red light emitting red light A cell R, and a blue light emitting cell B for emitting blue light.
화소들(100), 및/또는 발광셀들(111P, 113P, 115P)은 행열 형상으로 배치된다. 여기서 화소들(100) 및/또는 발광셀들(111P, 113P, 115P)이 행열 형상으로 배열된다는 의미는 화소들(100) 및/또는 발광셀들(111P, 113P, 115P)이 행이나 열을 따라 정확히 일렬로 배열되는 경우만을 의미하는 것은 아니며, 전체적으로 행이나 열을 따라 배열되기는 하나, 지그재그 형상으로 배열되는 등 세부적인 위치는 바뀔 수 있다.The pixels 100 and / or the light emitting cells 111P, 113P, and 115P are arranged in a matrix form. Here, the pixels 100 and / or the light emitting cells 111P, 113P, and 115P are arranged in a matrix form, meaning that the pixels 100 and / or the light emitting cells 111P, But they are arranged in a row or column as a whole, but they may be arranged in a zigzag shape, and the detailed positions may be changed.
도 3는 본 발명의 일 실시예에 의한 표시 장치를 나타내는 구조도이다. 3 is a structural view illustrating a display device according to an embodiment of the present invention.
도 3을 참조하면, 본 발명의 일 실시예에 의한 표시 장치(10)는, 타이밍 제어부(350), 주사 구동부(310), 데이터 구동부(330), 배선부, 및 화소들을 포함한다. 여기서, 화소들이 복수 개의 발광셀들(111P, 113P, 115P)을 포함하는 경우, 각각의 발광셀들(111P, 113P, 115P)은 개별적으로 배선부를 통해 주사 구동부(310), 데이터 구동부(330) 등에 연결된다. Referring to FIG. 3, a display device 10 according to an embodiment of the present invention includes a timing controller 350, a scan driver 310, a data driver 330, a wiring portion, and pixels. When the pixels include a plurality of light emitting cells 111P, 113P, and 115P, the light emitting cells 111P, 113P, and 115P are individually connected to the scan driver 310, the data driver 330, And the like.
타이밍 제어부(350)는 외부(일례로, 영상 데이터를 송신하는 시스템)로부터 표시 장치의 구동에 필요한 각종 제어신호 및 영상 데이터를 수신한다. 이러한 타이밍 제어부(350)는 수신한 영상 데이터를 재정렬하여 데이터 구동부(330)로 전송한다. 또한, 타이밍 제어부(350)는 주사 구동부(310) 및 데이터 구동부(330)의 구동에 필요한 주사 제어신호들 및 데이터 제어신호들을 생성하고, 생성된 주사 제어신호들 및 데이터 제어신호들을 각각 주사 구동부(310) 및 데이터 구동부(330)로 전송한다. The timing control unit 350 receives various control signals and image data necessary for driving the display device from outside (for example, a system for transmitting image data). The timing controller 350 rearranges the received image data and transmits the image data to the data driver 330. The timing controller 350 generates scan control signals and data control signals necessary for driving the scan driver 310 and the data driver 330 and supplies the generated scan control signals and data control signals to the scan driver 310 and the data driver 330. [
주사 구동부(310)는 타이밍 제어부(350)로부터 주사 제어신호를 공급받고, 이에 대응하여 주사신호를 생성한다. The scan driver 310 receives a scan control signal from the timing controller 350 and generates a scan signal corresponding to the scan control signal.
데이터 구동부(330)는 타이밍 제어부(350)로부터 데이터 제어신호 및 영상 데이터를 공급받고, 이에 대응하여 데이터 신호를 생성한다.The data driver 330 receives the data control signal and the image data from the timing controller 350 and generates a data signal corresponding thereto.
배선부는 다수 개의 신호 배선들을 포함한다. 배선부는, 구체적으로, 주사 구동부(310)와 발광셀들(111P, 113P, 115P)을 연결하는 제1 배선들(130)과 데이터 구동부(330)와 발광셀들(111P, 113P, 115P)을 연결하는 제2 배선들(120)을 포함한다. 본 발명의 일 실시예에 있어서, 제1 배선들(130)은 스캔 배선들일 수 있으며, 제2 배선들(120)은 데이터 배선들일 수 있는 바, 이하에서는 제1 배선을 스캔 배선으로 제2 배선을 데이터 배선으로 하여 설명한다. 이외에도, 배선부는 타이밍 제어부(350)와 주사 구동부(310), 타이밍 제어부(350)와 데이터 구동부(330), 또는 그 외 구성 요소들 사이를 연결하며 해당 신호를 전달하는 배선들을 더 포함한다. The wiring portion includes a plurality of signal wirings. Specifically, the wiring portion includes first wires 130, a data driver 330, and light emitting cells 111P, 113P, and 115P that connect the scan driver 310 and the light emitting cells 111P, 113P, and 115P And the second wirings 120 connecting the first wirings 120. [ In an embodiment of the present invention, the first wirings 130 may be scan wirings, and the second wirings 120 may be data wirings. Hereinafter, the first wirings are referred to as scan wirings, As data lines. In addition, the wiring unit further includes wiring for connecting the timing control unit 350 and the scan driving unit 310, the timing control unit 350 and the data driving unit 330, or other components and transmitting the corresponding signals.
스캔 배선들(130)은 주사 구동부(310)에서 생성된 주사신호를 발광셀들(111P, 113P, 115P)로 제공한다. 데이터 구동부(330)에서 생성된 데이터 신호는 데이터 배선들(120)로 출력된다. 데이터 배선들(120)로 출력된 데이터 신호는 주사신호에 의해 선택된 수평 화소 라인의 발광셀들(111P, 113P, 115P)로 입력된다.The scan lines 130 provide scan signals generated in the scan driver 310 to the light emitting cells 111P, 113P, and 115P. The data signal generated in the data driver 330 is output to the data lines 120. The data signal output to the data lines 120 is input to the light emitting cells 111P, 113P, and 115P of the horizontal pixel line selected by the scan signals.
발광셀들(111P, 113P, 115P)은 스캔 배선들(130) 및 데이터 배선들(120)에 접속된다. 발광셀들(111P, 113P, 115P)은 스캔 배선들(130)로부터 주사신호가 공급될 때 데이터 배선들(120)로부터 입력되는 데이터 신호에 대응하여 선택적으로 발광한다. 일례로, 각 프레임 기간 동안 각각의 발광셀들(111P, 113P, 115P)은 입력받은 데이터 신호에 상응하는 휘도로 발광한다. 블랙 휘도에 상응하는 데이터 신호를 공급받은 발광셀들(111P, 113P, 115P)은 해당 프레임 기간 동안 비발광함으로써 블랙을 표시한다. The light emitting cells 111P, 113P, and 115P are connected to the scan lines 130 and the data lines 120, respectively. The light emitting cells 111P, 113P, and 115P selectively emit light corresponding to a data signal input from the data lines 120 when a scan signal is supplied from the scan lines 130. [ For example, during each frame period, each of the light emitting cells 111P, 113P, and 115P emits light with a luminance corresponding to the input data signal. The light emitting cells 111P, 113P, and 115P supplied with the data signals corresponding to the black luminance display black by non-emitting light during the corresponding frame period.
본 발명의 일 실시예에 있어서, 서브 화소들, 즉 발광셀들은 패시브형 또는 액티브형으로 구동될 수 있다. 표시 장치가 액티브형으로 구동되는 경우 표시 장치는 주사신호 및 데이터신호 외에도 제1 및 제2 서브 화소 전원을 더 공급받아 구동될 수 있다.In one embodiment of the present invention, the sub-pixels, i.e., the light emitting cells, can be driven either passive or active. When the display device is driven in an active mode, the display device may be further supplied with the first and second sub-pixel power sources in addition to the scan signal and the data signal.
도 4a는 하나의 서브 화소를 나타내는 회로도로서, 패시브형 표시 장치를 구성하는 서브 화소의 일례를 도시한 회로도이다. 여기서, 서브 화소는 서브 화소들 중 하나, 예를 들어, 적색 서브 화소, 녹색 서브 화소, 청색 서브 화소 중 하나일 수 있으며, 본 실시예에서는 제1 발광셀(111P)을 표시하였다.4A is a circuit diagram showing one sub-pixel, and is a circuit diagram showing an example of sub-pixels constituting a passive display device. Here, the sub-pixel may be one of sub-pixels, for example, a red sub-pixel, a green sub-pixel, and a blue sub-pixel, and the first light emitting cell 111P is shown in the present embodiment.
도 4a를 참조하면, 제1 발광셀(111P)는 스캔 배선(130)과 데이터 배선(120) 사이에 접속되는 광원(LD)을 포함한다. 광원(LD)은 제1 및 제2 단자를 갖는 발광 다이오드일 수 있다. 제1 및 제2 단자는 발광셀 내 제1 전극(예컨대, 애노드)과 제2 전극(예컨대, 캐소드)에 각각 연결된다. 여기서, 제1 단자는 스캔 배선(130)에, 제2 단자는 데이터 배선(120)에 연결되거나, 또는 그 반대로 연결될 수 있다.Referring to FIG. 4A, the first light emitting cell 111P includes a light source LD connected between the scan line 130 and the data line 120. Referring to FIG. The light source LD may be a light emitting diode having first and second terminals. The first and second terminals are respectively connected to a first electrode (e.g., an anode) and a second electrode (e.g., a cathode) in the light emitting cell. Here, the first terminal may be connected to the scan wiring 130, the second terminal may be connected to the data line 120, or vice versa.
광원(LD)은, 제1 전극과 제2 전극 사이에 문턱전압 이상의 전압이 인가될 때, 인가된 전압의 크기에 상응하는 휘도로 발광한다. 즉, 스캔 배선(130)으로 인가되는 주사신호 및/또는 데이터 배선(120)으로 인가되는 데이터신호의 전압을 조절함에 의해 제1 광원(111P)의 발광을 제어할 수 있다.The light source LD emits light with a luminance corresponding to the magnitude of the applied voltage when a voltage equal to or higher than the threshold voltage is applied between the first electrode and the second electrode. That is, the emission of the first light source 111P can be controlled by adjusting the voltage of the scan signal applied to the scan line 130 and / or the data signal applied to the data line 120.
본 발명의 일 실시예에 있어서, 광원(LD)이 스캔 배선(130)과 데이터 배선(120) 사이에 하나만 연결된 것을 도시하였으나, 이에 한정되는 것은 아니다. 광원(LD)은 스캔 배선(130)과 데이터 배선(120) 사이에 복수 개로 연결될 수 있으며, 이 때, 광원(LD)은 병렬 또는 직렬 연결될 수 있다.In the exemplary embodiment of the present invention, the light source LD is connected between the scan line 130 and the data line 120, but the present invention is not limited thereto. A plurality of light sources LD may be connected between the scan lines 130 and the data lines 120. In this case, the light sources LD may be connected in parallel or in series.
도 4b는 제1 발광셀(111P)을 나타내는 회로도로서, 액티브형 표시 장치를 구성하는 서브 화소의 일례를 도시한 회로도이다. 표시 장치가 액티브형인 경우, 제1 발광셀(111P)는 주사신호 및 데이터신호 외에도 제1 및 제2 서브 화소전원(ELVDD, ELVSS)을 더 공급받아 구동될 수 있다.4B is a circuit diagram showing the first light emitting cell 111P, and is a circuit diagram showing an example of sub-pixels constituting an active display device. When the display device is of the active type, the first light emitting cell 111P may be further supplied with the first and second sub pixel power supplies ELVDD and ELVSS in addition to the scan signal and the data signal.
도 4b를 참조하면, 제1 발광셀(111P)는 하나 이상의 광원(LD)과, 이에 접속되는 트랜지스터부(TFT)를 포함한다.Referring to FIG. 4B, the first light emitting cell 111P includes at least one light source (LD) and a transistor portion (TFT) connected thereto.
광원(LD)의 제1 전극은 트랜지스터부(TFT)를 경유하여 제1 서브 화소전원(ELVDD)에 접속되고, 제2 전극은 제2 서브 화소전원(ELVSS)에 접속된다. 제1 서브 화소전원(ELVDD) 및 제2 서브 화소전원(ELVSS)은 서로 다른 전위를 가질 수 있다. 일례로, 제2 서브 화소전원(ELVSS)은 제1 서브 화소전원(ELVDD)의 전위보다 발광셀의 문턱전압 이상 낮은 전위를 가질 수 있다. 이러한 광원 각각은 트랜지스터부(TFT)에 의해 제어되는 구동전류에 상응하는 휘도로 발광한다.The first electrode of the light source LD is connected to the first sub pixel power source ELVDD via the transistor portion TFT and the second electrode thereof is connected to the second sub pixel power source ELVSS. The first sub pixel power supply ELVDD and the second sub pixel power supply ELVSS may have different potentials. For example, the second sub pixel power ELVSS may have a potential lower than the threshold voltage of the light emitting cell than the potential of the first sub pixel power ELVDD. Each of these light sources emits light with a luminance corresponding to the driving current controlled by the transistor portion (TFT).
본 발명의 일 실시예에 따르면, 트랜지스터부(TFT)는 제1 및 제2 트랜지스터(M1, M2)와 스토리지 커패시터(Cst)를 포함한다. 다만, 트랜지스터부(TFT)의 구조가 도 4b에 도시된 실시예에 한정되지는 않는다.According to an embodiment of the present invention, the transistor portion TFT includes first and second transistors M1 and M2 and a storage capacitor Cst. However, the structure of the transistor portion (TFT) is not limited to the embodiment shown in Fig. 4B.
제1 트랜지스터(M1, 스위칭 트랜지스터)의 소스 전극은 데이터 배선(120)에 접속되고, 드레인 전극은 제1 노드(N1)에 접속된다. 그리고, 제1 트랜지스터의 게이트 전극은 스캔 배선(130)에 접속된다. 이와 같은 제1 트랜지스터는, 스캔 배선(130)으로부터 제1 트랜지스터(M1)가 턴-온될 수 있는 전압의 주사신호가 공급될 때 턴-온되어, 데이터 배선(120)과 제1 노드(N1)를 전기적으로 연결한다. 이때, 데이터 배선(120)으로는 해당 프레임의 데이터신호가 공급되고, 이에 따라 제1 노드(N1)로 데이터신호가 전달된다. 제1 노드(N1)로 전달된 데이터신호는 스토리지 커패시터(Cst)에 충전된다.A source electrode of the first transistor M1 (switching transistor) is connected to the data line 120, and a drain electrode thereof is connected to the first node N1. The gate electrode of the first transistor is connected to the scan wiring 130. The first transistor is turned on when a scan signal of a voltage capable of turning on the first transistor M1 from the scan line 130 is supplied to the data line 120 and the first node N1, Respectively. At this time, the data signal of the frame is supplied to the data line 120, and the data signal is transmitted to the first node N1. The data signal transferred to the first node N1 is charged in the storage capacitor Cst.
제2 트랜지스터(M2, 구동 트랜지스터)의 소스 전극은 제1 서브 화소전원(ELVDD)에 접속되고, 드레인 전극은 발광셀의 제1 전극에 접속된다. 그리고, 제2 트랜지스터(M2)의 게이트 전극은 제1 노드(N1)에 접속된다. 이와 같은 제2 트랜지스터(M2)는 제1 노드(N1)의 전압에 대응하여 발광셀로 공급되는 구동전류의 양을 제어한다.The source electrode of the second transistor M2 (driving transistor) is connected to the first sub pixel power source ELVDD, and the drain electrode is connected to the first electrode of the light emitting cell. The gate electrode of the second transistor M2 is connected to the first node N1. The second transistor M2 controls the amount of the driving current supplied to the light emitting cells corresponding to the voltage of the first node N1.
스토리지 커패시터(Cst)의 일 전극은 제1 서브 화소전원(ELVDD)에 접속되고, 다른 전극은 제1 노드(N1)에 접속된다. 이와 같은 스토리지 커패시터(Cst)는 제1 노드(N1)로 공급되는 데이터신호에 대응하는 전압을 충전하고, 다음 프레임의 데이터신호가 공급될 때까지 충전된 전압을 유지한다.One electrode of the storage capacitor Cst is connected to the first sub-pixel power source ELVDD and the other electrode is connected to the first node N1. The storage capacitor Cst charges the voltage corresponding to the data signal supplied to the first node N1 and maintains the charged voltage until the data signal of the next frame is supplied.
편의상, 도 4b에서는 두 개의 트랜지스터를 포함하는 트랜지스터부(TFT)를 도시하였다. 하지만, 본 발명이 이에 한정되는 것은 아니며 트랜지스터부(TFT)의 구조는 다양하게 변경 실시될 수 있다. 예를 들어, 트랜지스터부는 더 많은 트랜지스터나 커패시터 등을 포함할 수 있다. 또한, 본 실시예에서 제1 및 제2 트랜지스터, 스토리지 커패시터, 및 배선들의 구체적인 구조를 도시하지는 않았으나, 제1 및 제2 트랜지스터, 스토리지 커패시터, 및 배선들본 발명의 실시예에 따른 회로를 구현하는 한도 내에서 다양한 형태로 제공될 수 있다.For convenience, a transistor portion (TFT) including two transistors is shown in Fig. 4B. However, the present invention is not limited thereto, and the structure of the transistor portion (TFT) can be variously modified. For example, the transistor portion may include more transistors, capacitors, and the like. Further, although the specific structure of the first and second transistors, the storage capacitor, and the wirings is not shown in this embodiment, the first and second transistors, the storage capacitor, and the wirings Can be provided in various forms within the limit.
도 5a는 도 2에 도시된 표시 장치 중 하나의 화소를 도시한 평면도이며, 도 5b는 도 5a의 Ⅰ-Ⅰ'선에 따른 단면도이다.FIG. 5A is a plan view showing one pixel of the display device shown in FIG. 2, and FIG. 5B is a cross-sectional view taken along the line I-I 'of FIG. 5A.
본 발명의 일 실시예에 따르면, 기판(210)과 기판(210) 상에 제공되고, 적색광, 녹색광, 및 청색광을 출사할 수 있는 제1 발광셀(111P), 제2 발광셀(113P), 및 제3 발광셀(115P)이 제공된다.A first light emitting cell 111P, a second light emitting cell 113P, and a second light emitting cell 111P provided on the substrate 210 and the substrate 210 and capable of emitting red light, green light, and blue light, respectively, according to an embodiment of the present invention, And a third light emitting cell 115P are provided.
제1 발광셀 내지 제3 발광셀(111P, 113P, 115P) 사이 각각에는 광을 비투과시키는 격벽(220)이 제공된다. 제1 발광셀 내지 제3 발광셀(111P, 113P, 115P)의 높이는 격벽(220)의 높이보다 낮다.Between the first to third light emitting cells 111P, 113P, and 115P, barrier ribs 220 for transmitting light are provided. The height of the first to third light emitting cells 111P, 113P, and 115P is lower than the height of the barrier ribs 220.
아울러, 격벽(220)과 제1 발광셀 내지 제3 발광셀(111P, 113P, 115P)간 거리는 10㎛ 내지 20㎛ 이하이다.The distance between the barrier ribs 220 and the first to third light emitting cells 111P, 113P, and 115P is 10 占 퐉 to 20 占 퐉 or less.
아래 설명에서 제1 발광셀 내지 제3 발광셀(111P, 113P, 115P)는 모든 발광셀에 공통적으로 적용되는 내용에 대해서는 '발광셀'로 통칭될 수 있다.In the following description, the first to third light emitting cells 111P, 113P, and 115P may be collectively referred to as 'light emitting cells' for the contents commonly applied to all light emitting cells.
아울러, 제1 발광셀 내지 제3 발광셀(111P, 113P, 115P)의 묶음, 백색광을 만들 수 있는 최소 단위는 '화소' 또는 '발광 소자'이라고 지칭하고자 한다.In addition, the minimum unit in which the bundles of the first to third light emitting cells 111P, 113P, and 115P and the white light can be formed is referred to as a 'pixel' or a 'light emitting device'.
이하에서는 표시 장치에 포함된 각 구성 요소에 대하여 더 자세하게 살펴본다.Hereinafter, each component included in the display device will be described in more detail.
기판(210)은 화소(100)에 전원 및 신호를 제공할 수 있도록 배선부가 포함된 것일 수 있다. The substrate 210 may include a wiring portion to supply power and a signal to the pixel 100.
도시하지는 않았으나, 기판(210) 상에는 화소(100)와 연결되는 스캔 배선들과 데이터 배선들을 포함하는 배선부 및/또는 트랜지스터부가 형성될 수 있다.Although not shown, a wiring portion and / or a transistor portion including scan wirings and data wirings connected to the pixel 100 may be formed on the substrate 210.
본 발명의 일 실시예에 있어서, 기판(210)은 인쇄 회로 기판일 수 있다. 기판(210)이 인쇄 회로 기판으로 제공되는 경우, 인쇄 회로 기판에는 화소(100)에 연결되는 배선부가 제공될 수 있으며, 이에 더해 타이밍 제어부, 주사 구동부, 데이터 구동부 등의 회로가 실장될 수 있다. In one embodiment of the present invention, the substrate 210 may be a printed circuit board. When the substrate 210 is provided as a printed circuit board, a wiring part connected to the pixel 100 may be provided on the printed circuit board, and a circuit such as a timing control part, a scan driving part, and a data driving part may be mounted.
인쇄 회로 기판은 배선부가 양면에 형성된 양면 인쇄 회로 기판일 수 있으며, 이 경우, 배선부는 화소(100)와 전기적으로 연결되도록 인쇄 회로 기판의 상면에 제공된 패드부들(235a, 235b)과, 인쇄 회로 기판의 상하면을 관통하는 연결부(235ba, 235bb)를 포함할 수 있다. 인쇄 회로 기판의 하면에는 전극(231, 232) 또는 배선 등이 실장될 수 있으며, 화소(100)의 배선들은 패드부들(235a, 235b) 및 연결부(235ba, 235bb) 등을 통해 인쇄 회로 기판의 하면의 전극(231, 232) 및 배선 등에 연결될 수 있다.In this case, the wiring portion may include pad portions 235a and 235b provided on the upper surface of the printed circuit board so as to be electrically connected to the pixel 100, and a printed circuit board And connecting portions 235ba and 235bb that penetrate the upper and lower surfaces of the base portion 235b. Electrodes 231 and 232 or wirings may be mounted on the lower surface of the printed circuit board and wirings of the pixel 100 may be mounted on the lower surface of the printed circuit board through the pad portions 235a and 235b and the connecting portions 235ba and 235bb. The electrodes 231 and 232, the wiring, and the like.
그러나, 기판(210)은 인쇄 회로 기판 이외에도 화소(100)가 실장될 수 있는 것으로서 달리 제공될 수 있다. 예를 들어, 기판(210)은 유리, 석영, 플라스틱 등과 같은 절연 기판 상에 배선부를 형성한 것일 수도 있다. 이 경우, 타이밍 제어부, 주사 구동부, 데이터 구동부 등의 회로 등은 절연 기판 상에 직접 형성되거나, 별도의 인쇄 회로 기판 등에 제공된 후 절연 기판의 배선부에 연결될 수도 있다. However, the substrate 210 may be otherwise provided as the pixel 100 may be mounted in addition to the printed circuit board. For example, the substrate 210 may have a wiring portion formed on an insulating substrate such as glass, quartz, plastic, or the like. In this case, the circuits such as the timing controller, the scan driver, and the data driver may be formed directly on the insulating substrate, or may be provided on a separate printed circuit board or the like, and then connected to the wiring portion of the insulating substrate.
기판(210)은 단단한 재료로 이루어질 수 있으나, 이에 한정되는 것은 아니며, 가요성 재료로 이루어질 수 있다. 본 발명의 일 실시예에 따른 표시 장치가 휘어진, 또는 휘어질 수 있는 표시 장치로 구현되는 경우, 기판(210)이 가요성 재료로 이루어진 것이 유리할 수 있다. 본 발명의 일 실시예에 있어서, 기판(210)이 유리, 석영, 등과 같은 재료로 이루어지는 경우 유기 고분자 기판보다는 상대적으로 내열성이 높아 그 상면에 다양한 적층이 가능한 장점이 있다. 기판(210)이 유리나 석영 등과 같은 투명한 재료로 이루어지는 경우 전면이나 배면 발광 표시 장치를 제조하는 데 유리할 수 있다. 기판(210)이 유기 고분자나 유무기 복합재 등으로 이루어지는 경우 상대적으로 가요성이 높을 수 있으며 곡면 표시 장치를 제조하는 데 유리할 수 있다.The substrate 210 may be made of a rigid material, but is not limited thereto and may be made of a flexible material. When the display device according to an embodiment of the present invention is implemented as a display device capable of being bent or warped, it may be advantageous that the substrate 210 is made of a flexible material. In an embodiment of the present invention, when the substrate 210 is formed of a material such as glass, quartz, or the like, the substrate 210 has a relatively higher heat resistance than the organic polymer substrate. If the substrate 210 is made of a transparent material such as glass or quartz, it may be advantageous to manufacture a front or back light display device. In the case where the substrate 210 is made of an organic polymer or an inorganic composite material, the substrate 210 may be relatively flexible and may be advantageous for manufacturing a curved display device.
기판(210)에는 도전성 접착층을 사이에 두고 적어도 하나 이상의 화소(100)가 실장된다. 표시 장치에 있어서, 화소(100)는 기판(210)의 서브 화소 영역에 실장된다.At least one pixel 100 is mounted on the substrate 210 with a conductive adhesive layer interposed therebetween. In the display device, the pixel 100 is mounted on the sub pixel area of the substrate 210. [
본 발명의 일 실시예에 따르면, 화소(100)는 제1 발광셀(111P), 제2 발광셀(113P), 및 제3 발광셀(115P)을 포함한다. 각 발광셀(111P, 113P, 115P)는 기판(210) 상에 평면 상에서 이격된 형태로 제공된다.According to an embodiment of the present invention, the pixel 100 includes a first light emitting cell 111P, a second light emitting cell 113P, and a third light emitting cell 115P. Each light emitting cell 111P, 113P, and 115P is provided on the substrate 210 in a planar spaced-apart form.
제1 내지 제3 발광셀(111P, 113P, 115P)는 서로 다른 파장 대역의 광을 출사할 수 있다. 즉, 제1 내지 제3 발광셀(111P, 113P, 115P)이 출사하는 광을 각각 제1 내지 제3 광이라고 하면, 제1 내지 제3 광은 서로 다른 파장 대역을 가질 수 있다. 본 실시예에서는, 상술한 바와 같이, 제1 내지 제3 광은 각각 녹색, 적색, 및 청색의 파장 대역을 가질 수 있으며, 이때, 제1 내지 제3 발광셀들(111, 113, 115)은 녹색, 적색, 및 청색 발광 다이오드로 구현될 수 있다.The first to third light emitting cells 111P, 113P, and 115P can emit light of different wavelength bands. That is, if the light emitted from the first through third light emitting cells 111P, 113P, and 115P is referred to as first through third lights, respectively, the first through third lights may have different wavelength bands. In this embodiment, as described above, the first to third light may have wavelength bands of green, red, and blue, respectively. Here, the first to third light emitting cells 111, 113, Green, red, and blue light emitting diodes.
다만, 실시예에 따라, 제1 내지 제3 발광셀(111P, 113P, 115P) 중 일부 또는 모두는 동일한 파장의 광을 출사할 수도 있다. 예를 들어, 제1 발광셀(111P)는 제1 파장의 광을 출사하고, 제2 발광셀(113P) 및 제3 발광셀(115P)는 제1 파장과는 상이나 서로 동일한 제2 파장의 광을 출사할 수 있다. 이 경우 제2 발광셀 또는 제3 발광셀(113P, 115P) 상에 파장변환기(250)이 제공될 수 있다. 파장변환기(250)은 발광셀로부터 출사된 광의 파장을 변환할 수 있다. 예를 들어, 제2 발광셀(113P)로부터 출사된 자외선 또는 청색 파장 대역의 광은 파장변환기(250)을 투과하면서 적색 파장 대역의 광으로 파장이 변환될 수 있다. 이에 따라, 제1 발광셀 내지 제3 발광셀(111P, 113P, 115P) 중 일부 또는 모두로부터 동일한 파장의 광을 출사되어도, 사용자는 각 발광셀(111P, 113P, 115P)로부터 서로 다른 파장의 광이 출사된 것과 같이 시인할 수 있다.However, according to the embodiment, some or all of the first to third light emitting cells 111P, 113P, and 115P may emit light of the same wavelength. For example, the first light emitting cell 111P emits light of a first wavelength, and the second light emitting cell 113P and the third light emitting cell 115P emit light of a second wavelength that is different from the first wavelength, . In this case, the wavelength converter 250 may be provided on the second or third light emitting cells 113P and 115P. The wavelength converter 250 may convert the wavelength of the light emitted from the light emitting cell. For example, the ultraviolet light or the blue wavelength band light emitted from the second light emitting cell 113P may be transmitted through the wavelength converter 250 and converted into the light of the red wavelength band. Accordingly, even if light of the same wavelength is emitted from some or all of the first to third light emitting cells 111P, 113P, and 115P, the user can obtain light of different wavelengths from the light emitting cells 111P, 113P, Can be admitted as if it had been released.
각 발광셀(111P, 113P, 115P)는 기판(210) 상면에 제공된 패드부(235a, 235b)에 실장된다. 이때 상술한 바와 같이 발광셀(111P, 113P, 115P)와 패드부(235a, 235b) 사이에는 안정적인 전기적 연결을 담보하기 위하여 도전성 접착층이 제공될 수 있다. 도전성 접착층은 솔더 페이스트, 은 페이스트 등의 도전성 페이스트나 도전성 수지로 구성될 수 있다.Each of the light emitting cells 111P, 113P, and 115P is mounted on the pad portions 235a and 235b provided on the upper surface of the substrate 210. [ At this time, as described above, a conductive adhesive layer may be provided between the light emitting cells 111P, 113P, and 115P and the pad portions 235a and 235b to secure a stable electrical connection. The conductive adhesive layer may be composed of a conductive paste such as solder paste, silver paste or the like or a conductive resin.
패드부(235a, 235b)는 기판(210)을 관통하는 연결부(235ba, 235bb)에 의하여, 기판(210) 배면에 제공된 전극(231, 232)과 연결될 수 있다. 이때 전극(231, 232)은 공통 전극(231) 및 서브 화소 전극(232)을 포함할 수 있다. 화소(100)에 제공된 제1 내지 제3 발광셀(111P, 113P, 115P)은 하나의 공통 전극(231)에 연결될 수 있다. 아울러, 서브 화소 전극(232)은 복수 개 제공될 수 있으며, 각각의 서브 화소 전극(232)은 제1 내지 제3 발광셀(111P, 113P, 115P)와 1대1 대응할 수 있다.The pad portions 235a and 235b may be connected to the electrodes 231 and 232 provided on the back surface of the substrate 210 by connecting portions 235ba and 235bb passing through the substrate 210. [ At this time, the electrodes 231 and 232 may include a common electrode 231 and a sub-pixel electrode 232. The first through third light emitting cells 111P, 113P, and 115P provided in the pixel 100 may be connected to one common electrode 231. [ In addition, a plurality of sub-pixel electrodes 232 may be provided, and each sub-pixel electrode 232 may correspond one-to-one with the first through third light emitting cells 111P, 113P, and 115P.
본 발명의 일 실시예에 따르면, 하나의 화소(100)에 제공된 발광셀들(111P, 113P, 115P)을 동일한 공통 전극(231)에 연결함으로써, 배선 구조를 단순화할 수 있고, 표시 장치 제조 공정 효율을 향상시킬 수 있다. 복수 개의 발광셀들(111P, 113P, 115P)의 하나의 공통 전극(231)에 연결되는 때, 공통 전극(231)의 크기는 서브 화소 전극(232)에 비하여 상대적으로 클 수 있다.The wiring structure can be simplified by connecting the light emitting cells 111P, 113P, and 115P provided in one pixel 100 to the same common electrode 231. In the display device manufacturing process The efficiency can be improved. When the common electrode 231 is connected to one common electrode 231 of the plurality of light emitting cells 111P, 113P and 115P, the size of the common electrode 231 may be relatively larger than that of the sub pixel electrode 232.
공통 전극(231) 및 서브 화소 전극(232)은 표시 장치의 데이터 배선, 스캔 배선과 연결될 수 있다. 이에 따라, 공통 전극(231) 및 서브 화소 전극(232)을 통해 주사 신호 및 데이터 신호가 발광셀(111P, 113P, 115P)로 전달될 수 있다.The common electrode 231 and the sub-pixel electrode 232 may be connected to the data line and the scan line of the display device. Accordingly, the scan signal and the data signal can be transmitted to the light emitting cells 111P, 113P, and 115P through the common electrode 231 and the sub pixel electrode 232, respectively.
공통 전극(231)과 서브 화소 전극(232)은 서로 다른 형의 전극일 수 있다. 예컨대 공통 전극(231)이 p형 전극인 경우, 서브 화소 전극(232)은 n형 전극일 수 있고, 그 반대도 가능하다.The common electrode 231 and the sub-pixel electrode 232 may be electrodes of different types. For example, when the common electrode 231 is a p-type electrode, the sub-pixel electrode 232 can be an n-type electrode and vice versa.
공통 전극(231)과 서브 화소 전극(232)의 크기는 발광셀의 제1 단자 및 제2 단자의 크기보다 클 수 있다.The size of the common electrode 231 and the sub pixel electrode 232 may be larger than the sizes of the first terminal and the second terminal of the light emitting cell.
기판(210) 상에는 격벽(220)이 제공된다. 이때, 격벽(220)은 제1 발광셀 내지 제3 발광셀(111P, 113P, 115P)사이사이 마다 제공된다. A barrier rib 220 is provided on the substrate 210. At this time, the barrier ribs 220 are provided between the first to third light emitting cells 111P, 113P, and 115P.
격벽(220)은 서로 연결된 일체로 제공되거나, 서로 분리된 형태로 제공될 수 있다. 예를 들어, 제1 발광셀(111P)와 제2 발광셀(113P) 사이에 제공된 격벽(220)과 제2 발광셀(113P)와 제3 발광셀(115P) 사이에 제공된 격벽은 서로 연결되어 있거나 분리되어 있을 수 있다.The barrier ribs 220 may be provided integrally with each other or may be provided separately from each other. For example, the barrier ribs provided between the first and second light emitting cells 111P and 113P and the barrier ribs provided between the second and third light emitting cells 113P and 115P are connected to each other Or may be separate.
이하에서는 각 발광셀(111P, 113P, 115P) 사이에 제공된 격벽(220)이 서로 연결된, 일체로 제공되는 경우를 예시로 하여 설명하고자 한다.Hereinafter, the case where the barrier ribs 220 provided between the respective light emitting cells 111P, 113P, and 115P are integrally connected to each other will be described as an example.
일체로 제공되는 격벽(220)은 각 화소(100) 마다 복수 개의 개구들(221, 222, 223)을 포함한다. 격벽(220)은 발광셀(111P, 113P, 115P)들이 상기 개구(221, 222, 223) 내에 제공되는 형태로 제공된다.The barrier rib 220 provided integrally includes a plurality of openings 221, 222, and 223 for each pixel 100. The barrier ribs 220 are provided in such a manner that the light emitting cells 111P, 113P, and 115P are provided in the openings 221, 222, and 223.
격벽(220)은 비도전성 재료로 이루어진 절연막으로서, 광을 투과시키지 않는 층이다. 본 발명의 일 실시예에 있어서, 격벽(220)은 광 흡수 물질로 이루어질 수 있다. 격벽(220)은 블랙으로 제공될 수 있으며, 예를 들어, 표시 장치 등에 사용되는 차광부 재료로 이루어질 수 있다.The barrier rib 220 is an insulating layer made of a non-conductive material, and is a layer that does not transmit light. In one embodiment of the present invention, the barrier ribs 220 may be formed of a light absorbing material. The barrier ribs 220 may be provided in black, and may be made of, for example, a light shielding material used for a display device or the like.
일 실시예에 따르면, 격벽(220)은 감광성 솔더 레지스트(PSR; photo solder resist)와 광흡수 물질이 혼합된 조성물로부터 형성될 수 있다. 감광성 솔더 레지스트와 광흡수 물질이 혼합된 조성물을 이용함으로써, 격벽(220) 형성 공정이 단순화될 수 있다. 구체적으로, 상온에서 조성물을 도포하고 광 경화함으로써, 가혹한 공정 조건 없이 격벽(220) 형성이 가능하다.According to one embodiment, the barrier ribs 220 may be formed from a composition in which a photo solder resist (PSR) and a light absorbing material are mixed. By using a composition in which a photosensitive solder resist and a light absorbing material are mixed, the process of forming the barrier ribs 220 can be simplified. Specifically, by applying the composition at room temperature and photo-curing it, barrier ribs 220 can be formed without severe process conditions.
격벽(220)을 형성하기 위한 감광성 솔더 레지스트(PSR)로는 다양한 물질이 사용될 수 있다. 예를 들어, 감광성 솔더 레지스트는 감광성 유기 고분자를 포함할 수 있다. 감광성 유기 고분자는 폴리에틸렌(Polyethylene), 폴리프로필렌(Polypropylene), 폴리비닐클로라이드(Polyvinylchloride), 폴리스티렌(Polystyrene), ABS 수지(Acrylonitrile-Butadiene-Styrene resin), 메타크릴수지(Methacrylate resin), 폴리아미드(Polyamide), 폴리카보네이트(Polycarbonate), 폴리아세틸(Polyacetyl), 폴리에틸렌테레프탈레이트(Polyethylene terephthalate), 변성 PPO 수지(Modified Polyphenylene Oxide), 폴리부티렌 테레프탈레이트(Polybutylen terephthalate), 폴리우레탄(Polyurethane), 페놀 수지(Phenolic resin), 우레아 수지(Urea resin), 멜라민 수지(Melamine resin) 및 이들의 조합 중에서 선택된 어느 하나일 수 있다.As the photosensitive solder resist (PSR) for forming the barrier ribs 220, various materials can be used. For example, the photosensitive solder resist may comprise a photosensitive organic polymer. Photosensitive organic polymers may be selected from the group consisting of polyethylene, polypropylene, polyvinylchloride, polystyrene, acrylonitrile-butadiene-styrene resin, methacrylate resin, polyamide ), Polycarbonate, Polyacetyl, Polyethylene terephthalate, Modified Polyphenylene Oxide, Polybutylen terephthalate, Polyurethane, Phenolic resin Phenolic resin, urea resin, melamine resin, and combinations thereof.
아울러, 감광성 솔더 레지스트(PSR)의 광경화 반응을 돕기 위하여, 격벽(220)을 형성하기 위한 조성물에는 감광성 경화제가 더 포함될 수 있다. 다만, 상술한 물질 외에도 다양한 물질을 이용하여 격벽(220)을 형성할 수 있다.In addition, a photosensitive hardening agent may be further included in the composition for forming the barrier ribs 220 to assist the photo-curing reaction of the photosensitive solder resist (PSR). However, the barrier ribs 220 may be formed using various materials in addition to the above-described materials.
또한 본 발명의 일 실시예에 있어서, 격벽(220)을 형성하기 위한 조성물은 폴리디메틸실록산(Polydimethylsiloxane; PDMS)과 카본 입자들(Carbon Particles)을 배합한 것일 수 있다.In one embodiment of the present invention, the composition for forming the barrier rib 220 may be a mixture of polydimethylsiloxane (PDMS) and carbon particles.
격벽(220)은 광흡수 물질을 포함하는 바, 발광셀(111P, 113P, 115P)로부터 출사된 광 중 일부를 흡수할 수 있다. 구체적으로, 발광셀(111P, 113P, 115P)로부터 출사된 광 중 인접한 발광셀(111P, 113P, 115P)을 향하여 진행하는 광의 일부는 격벽(220)에서 흡수될 수 있다. 이에 따라, 서로 다른 발광셀(111P, 113P, 115P)로부터 출사된 광이 불필요하게 혼색되는 것을 방지할 수 있다. 아울러, 광의 불필요한 혼색이 방지됨에 따라, 어떤 방향에서 표시 장치를 보아도 시인되는 광의 색 배합이 동일하다.The barrier rib 220 includes a light absorbing material and can absorb a part of the light emitted from the light emitting cells 111P, 113P, and 115P. Particularly, a part of the light emitted from the light emitting cells 111P, 113P, and 115P toward the adjacent light emitting cells 111P, 113P, and 115P can be absorbed by the barrier ribs 220. [ Thus, light emitted from the different light emitting cells 111P, 113P, and 115P can be prevented from unnecessarily mixing colors. In addition, since unnecessary color mixing of light is prevented, the color combination of the visible light is the same even when the display device is viewed in any direction.
다만, 상술한 격벽(220)에 의한 광의 불필요한 혼색 방지는 하나의 화소(100)으로부터 출사된 복수의 광의 혼색을 완전히 차단한다는 의미는 아니다. 예컨대, 하나의 화소(100)가 복수 개의 발광셀(111P, 113P, 115P)을 포함하고 각 발광셀로부터 적색광, 청색광, 녹색광이 출사되는 경우, 적색광, 청색광, 녹색광은 혼색되어 사용자에게 백색광으로 시인될 수 있다. 격벽(220)은 광이 불필요하게 인접한 화소로부터의 광과 혼색되어, 표시 장치와 수직하지 않은 방향에서 표시 장치를 보았을 때, 백색광이 다른 색으로 시인되는 것을 방지하는 것이다.However, preventing unnecessary color mixing of light by the barrier rib 220 does not mean completely blocking color mixing of a plurality of lights emitted from one pixel 100. For example, when one pixel 100 includes a plurality of light emitting cells 111P, 113P, and 115P and red light, blue light, and green light are emitted from each light emitting cell, the red light, the blue light, and the green light are mixed, . The barrier ribs 220 prevent the white light from being visually recognized as a different color when the display device is viewed in a direction not perpendicular to the display device by mixing light with light from pixels unnecessarily adjacent to the display device.
이러한 불필요한 혼색 방지를 위하여, 격벽(220)의 높이는 발광셀(111P, 113P, 115P)의 높이보다 크다. 예컨대, 격벽(220)이 제2 높이(H2)를 갖고, 제1 내지 제3 발광셀(111P, 113P, 115P) 중 어느 하나가 제1 높이(H1)를 갖는다고 했을 때, 제2 높이(H2)는 제1 높이(H1)보다 크다. In order to prevent unnecessary color mixing, the height of the barrier ribs 220 is greater than the height of the light emitting cells 111P, 113P, and 115P. For example, when the barrier rib 220 has the second height H2 and one of the first to third light emitting cells 111P, 113P, and 115P has the first height H1, H2 is greater than the first height H1.
이때 이때 제1 높이(H1)는 기판(210) 상면으로부터 발광셀(111P, 113P, 115P) 상면까지의 거리이다. 발광셀(111P, 113P, 115P) 상면에 요철이 제공되어 발광셀 상면이 굴곡져 있는 경우, 제1 높이(H1)는 기판(210) 상면으로부터 발광셀(111P, 113P, 115P) 상면의 요철 끝까지 거리일 수 있다.Here, the first height H1 is a distance from the upper surface of the substrate 210 to the upper surface of the light emitting cells 111P, 113P, and 115P. The first height H1 is a distance from the upper surface of the substrate 210 to the concave and convex ends of the upper surface of the light emitting cells 111P, 113P, and 115P, when concaves and convexes are provided on the upper surfaces of the light emitting cells 111P, It can be distance.
제2 높이(H2)는 기판(210)과 격벽(220)이 접한 면으로부터 격벽(220) 상면까지의 거리를 의미한다. 아울러, 격벽(220)의 두께가 평면 상 위치에 따라 다른 경우, 제2 높이(H2)는 기판(210)과 격벽(220)이 접한 면으로부터 격벽(220) 상면까지의 거리의 평균일 수 있다.The second height H2 means a distance from the surface where the substrate 210 is in contact with the barrier rib 220 to the top surface of the barrier rib 220. [ The second height H2 may be an average distance from the surface of the substrate 210 contacting the barrier 220 to the top surface of the barrier 220 when the thickness of the barrier 220 varies depending on the planar position .
제2 높이(H2)는 약 15㎛ 내지 약 115㎛일 수 있다. 상술한 수치 범위는 제1 발광셀 내지 제3 발광셀(111P, 113P, 115P)로부터 출사된 빛이 불필요하게 혼색되지 않도록 하기 위한 격벽(220)의 높이이다. 아울러, 제2 높이(H2)가 약 115㎛를 초과할 때, 발광셀(111P, 113P, 115P)로부터 출사되는 광량이 지나치게 줄어들거나, 표시 장치 전체의 두께가 지나치게 커질 우려가 있다. 또한, 제2 높이(H2)가 약 15㎛ 미만일 때는 발광셀(111P, 113P, 115P)로부터 출사된 광 사이에 불필요한 혼색이 발생할 수 있다. 화소(100)에 서로 다른 발광셀(111P, 113P, 115P)이 제공되는 경우, 제1 높이(H1)는 발광셀(111P, 113P, 115P) 별로 달라질 수 있다. 그러나, 이 경우에도 제2 높이(H2)는 제1 높이(H1)보다 큰 바, 어떤 발광셀(111P, 113P, 115P)의 제1 높이(H1)보다도 제2 높이(H2)가 크다.The second height H2 may be from about 15 [mu] m to about 115 [mu] m. The above numerical range is the height of the barrier rib 220 for preventing light emitted from the first to third light emitting cells 111P, 113P, and 115P from being unnecessarily mixed. In addition, when the second height H2 exceeds about 115 mu m, the amount of light emitted from the light emitting cells 111P, 113P, and 115P may be excessively reduced, or the thickness of the entire display device may become excessively large. Further, when the second height H2 is less than about 15 mu m, unnecessary color mixing may occur between the light emitted from the light emitting cells 111P, 113P, and 115P. When the pixel 100 is provided with different light emitting cells 111P, 113P, and 115P, the first height H1 may be different for each of the light emitting cells 111P, 113P, and 115P. In this case, however, the second height H2 is larger than the first height H1, and the second height H2 is larger than the first height H1 of certain light emitting cells 111P, 113P, and 115P.
발명의 일 실시예에 따르면 제2 높이(H2)와 제1 높이(H1)의 차는 0 초과 약 100㎛ 이하일 수 있다. 제2 높이(H2)와 제1 높이(H1)의 차가 약 100㎛보다 클 경우, 하나의 화소(100)으로부터 출사된 광의 혼합이 차단되고 백색광 구현이 어려울 수 있다.According to an embodiment of the present invention, the difference between the second height H2 and the first height H1 may be greater than 0 and less than or equal to about 100 탆. If the difference between the second height H2 and the first height H1 is greater than about 100 mu m, mixing of light emitted from one pixel 100 is blocked and white light can be difficult to implement.
화소(100)가 플립 칩(Flip chip)일 때, 제1 높이(H1)는 약 1약 10㎛ 내지 약 20㎛일 수 있다. 이에 따라, 격벽(220)의 두께 또는 제2 높이(H2)가 상대적으로 작아질 수 있으며, 표시 장치 전체의 두께가 얇아질 수 있다.When the pixel 100 is a flip chip, the first height H1 may be about 1 to about 20 microns. Accordingly, the thickness or the second height H2 of the barrier ribs 220 can be relatively small, and the thickness of the entire display device can be reduced.
발광셀(111P, 113P, 115P)이 제공되는 개구(221, 222, 223)의 폭은 발광셀(111P, 113P, 115P)에 따라 달라질 수 있다. 예컨대, 발광셀(111P, 113P, 115P)의 크기에 따라 개구(221, 222, 223)의 크기도 달라질 수 있다.The widths of the openings 221, 222 and 223 provided with the light emitting cells 111P, 113P and 115P may vary according to the light emitting cells 111P, 113P and 115P. For example, the sizes of the openings 221, 222, and 223 may be varied depending on sizes of the light emitting cells 111P, 113P, and 115P.
개구(221, 222, 223)의 폭은 발광셀(111P, 113P, 115P)의 폭보다 크다. 발광셀들(111P, 113P, 115P)은 개구(221, 222, 223)를 형성하는 격벽(220)의 측벽과 발광셀(111P, 113P, 115P)에 닿지 않도록 배치된다.The widths of the openings 221, 222, and 223 are larger than the widths of the light emitting cells 111P, 113P, and 115P. The light emitting cells 111P, 113P and 115P are arranged so as not to contact the side walls of the partition 220 forming the openings 221, 222 and 223 and the light emitting cells 111P, 113P and 115P.
발광셀(111P, 113P, 115P)와 개구(221, 222, 223)의 측벽 사이의 거리는 약 약 10㎛ 내지 약 20㎛일 수 있다. 상기 수치 범위는 격벽(220)이 발광셀(111P, 113P, 115P)들로부터 출사되는 광이 불필요하게 혼색되는 것을 방지하면서도, 개구(221, 222, 223)에 의해 오픈된 면적의 비율을 낮출 수 있다. 본 발명의 일 실시예에 있어서, 표시 장치의 평면상 면적 중에서 격벽(220)이 차지하는 면적은 전체 면적의 약 50% 내지 약 99%일 수 있다. 격벽(220)이 차지하는 면적이 상대적으로 커짐에 따라, 표시 장치의 콘트라스트비가 향상될 수 있다.The distance between the light emitting cells 111P, 113P, and 115P and the sidewalls of the openings 221, 222, and 223 may be about 10 mu m to about 20 mu m. The numerical range is set so that the ratio of the area opened by the openings 221, 222, and 223 can be reduced while preventing the partition 220 from unnecessarily mixing light emitted from the light emitting cells 111P, 113P, and 115P have. In an embodiment of the present invention, the area occupied by the barrier ribs 220 among the planar area of the display device may be about 50% to about 99% of the total area. As the area occupied by the barrier ribs 220 becomes relatively large, the contrast ratio of the display device can be improved.
발명의 일 실시예에 따르면, 발광셀(111P, 113P, 115P)의 폭은 200㎛ 이하일 수 있다. 예를 들어, 발광셀(111P, 113P, 115P)이 사각형 형태를 갖는 때, 사각형 한 변의 길이는 약 200㎛ 이하일 수 있다. 발광셀(111P, 113P, 115P)이 상술한 크기를 가짐에 따라, 동일한 면적에 상대적으로 더 많은 발광셀(111P, 113P, 115P)을 실장할 수 있다. 이에 따라, 표시 장치의 해상도가 향상될 수 있다.According to an embodiment of the present invention, the width of the light emitting cells 111P, 113P, and 115P may be 200 mu m or less. For example, when the light emitting cells 111P, 113P, and 115P have a rectangular shape, the length of one side of the square may be about 200 mu m or less. As the light emitting cells 111P, 113P, and 115P have the sizes described above, it is possible to mount more light emitting cells 111P, 113P, and 115P in the same area. Thus, the resolution of the display device can be improved.
본 발명의 일 실시예에 따르면, 발광셀(111P, 113P, 115P) 상에 파장변환기(250)이 더 제공될 수 있다. 실시예에 따라 파장변환기(250)은 발광셀(111P, 113P, 115P) 중 일부 상에만 제공될 수 있다. 에컨대, 제2 발광셀(113P) 상에만 파장변환기(250)이 제공될 수 있다. 제2 발광셀(113P)에 제공된 파장변환기(250)은 제2 발광셀(113P)로부터 출사되는 광의 파장 대역을 변환한다. 파장변환기(250)을 거친 후의 광은 제2 발광셀(113P)로부터 출사되었을 때와 다른 색깔로 시인될 수 있다. 아울러, 파장변환기(250)을 거친 후 광의 파장은 파장변환기(250)이 제공되지 않는 제1 발광셀(111P) 또는 제3 발광셀(115P)로부터 출사된 광의 파장과 다를 수 있다. 파장변환기(250)은 특히 상대적으로 단파장의 광을 흡수한 후, 흡수한 광의 파장 보다 더 긴 파장의 광을 출사할 수 있다.According to an embodiment of the present invention, a wavelength converter 250 may further be provided on the light emitting cells 111P, 113P, and 115P. The wavelength converter 250 may be provided only on some of the light emitting cells 111P, 113P, and 115P. The wavelength converter 250 may be provided only on the second light emitting cell 113P. The wavelength converter 250 provided in the second light emitting cell 113P converts the wavelength band of the light emitted from the second light emitting cell 113P. The light after passing through the wavelength converter 250 can be viewed with a color different from that when the light is emitted from the second light emitting cell 113P. In addition, the wavelength of the light after passing through the wavelength converter 250 may be different from the wavelength of the light emitted from the first light emitting cell 111P or the third light emitting cell 115P, to which the wavelength converter 250 is not provided. The wavelength converter 250 can emit light having a wavelength longer than the wavelength of the absorbed light, in particular, after absorbing light having a relatively short wavelength.
예를 들어, 제1 발광셀(111P)로부터 청색광이 출사되고, 제3 발광셀(115P)로부터 녹색광이 출사되는 때, 제2 발광셀(113P)로부터 출사되어 파장변환기(250)을 거친 광은 적색광으로 시인될 수 있다. 이때 제2 발광셀(113P)로부터 출사된 광은 청색광, 녹색광, 또는 자외선 등일 수 있다. 청색광, 녹색광, 또는 자외선은 파장변환기(250)에서 적색광으로 변환된다.For example, when blue light is emitted from the first light emitting cell 111P and green light is emitted from the third light emitting cell 115P, light emitted from the second light emitting cell 113P and passing through the wavelength converter 250 And can be viewed with red light. At this time, the light emitted from the second light emitting cell 113P may be blue light, green light, ultraviolet light, or the like. The blue light, the green light, or the ultraviolet light is converted into the red light by the wavelength converter 250.
파장변환기(250)은 형광체층(251) 및 컬러 필터(252)을 포함할 수 있다. 형광체층(251)과 컬러 필터(252) 모두 수광된 빛의 파장을 특정 파장 대역으로 변환하는 기능을 수행한다. 본 발명의 일 실시예에 있어서, 변환되어 출사되는 광의 파장 대역 폭에 있어서 형광체층(251)과 컬러 필터(252)는 차이를 나타낼 수 있다. 예컨대, 컬러 필터(252)는 양자점 물질을 포함할 수 있으며, 수광된 빛을 상대적으로 좁은 대역 폭의 광으로 변환할 수 있다. 이와 비교하여, 형광체층(251)은 수광된 빛을 상대적으로 넓은 대역 폭의 광으로 변환할 수 있다.The wavelength converter 250 may include a phosphor layer 251 and a color filter 252. Both the phosphor layer 251 and the color filter 252 function to convert the wavelength of the received light into a specific wavelength band. In an embodiment of the present invention, the phosphor layer 251 and the color filter 252 may exhibit a difference in the wavelength band width of the light that is converted and emitted. For example, the color filter 252 may include a quantum dot material and convert the received light into light of a relatively narrow bandwidth. In comparison, the phosphor layer 251 can convert received light into light having a relatively wide bandwidth.
파장변환기(141) 상에는 적색 컬러 필터(143)이 더 제공될 수 있다. 컬러 필터(143)은 생략될 수도 있으며, 컬러 필터(143)이 제공되는 경우 한 층 더 고순도의 컬러를 구현할 수 있다.On the wavelength converter 141, a red color filter 143 may further be provided. The color filter 143 may be omitted and a higher purity color may be realized when the color filter 143 is provided.
형광체층(251)은 개구(222) 내부를 채우는 형태로 제공될 수 있다. 이에 따라, 발광셀(113P)로부터 출사된 빛은 사용자의 눈에 시인되기 전에 형광체층(251)을 거칠 수 있다.The phosphor layer 251 may be provided in the form of filling the inside of the opening 222. Accordingly, the light emitted from the light emitting cell 113P can pass through the phosphor layer 251 before being visible to the user's eyes.
형광체층(251)은 PDMS(polydimethylsiloxane), PI(polyimide), PMMA(poly(methyl 2-methylpropenoate))가 세라믹 등의 투명 또는 반투명 바인더와 함께 혼합된 형태로 제공될 수 있다. The phosphor layer 251 may be provided in a mixed form with PDMS (polydimethylsiloxane), PI (polyimide) or PMMA (poly (methyl 2-methylpropenoate)) together with a transparent or semitransparent binder such as ceramic.
컬러 필터(252)는 발광셀(113P)와 이격된 형태로 제공될 수 있다. 컬러 필터(252)의 폭은 개구(222)의 폭보다 클 수 있다. 이에 따라, 컬러 필터 층(252)의 일부는 격벽(220)과 평면상에서 중첩할 수 있다. 컬러 필터 층(252)가 상기와 같은 형태를 가짐에 따라, 발광셀(113P)로부터 출사된 광이 컬러 필터(252)을 거치지 않고 사용자에게 시인되는 것을 방지하는 동시에 구조적 안정성을 향상시킬 수 있다.The color filter 252 may be provided in a form separated from the light emitting cell 113P. The width of the color filter 252 may be greater than the width of the opening 222. [ Accordingly, a part of the color filter layer 252 can overlap with the barrier rib 220 in a plane. As the color filter layer 252 has the above-described shape, the light emitted from the light emitting cell 113P can be prevented from being visible to the user without passing through the color filter 252, and at the same time, the structural stability can be improved.
컬러 필터(252)는 광의 색 순도를 높일 수 있다. 구체적으로, 컬러 필터(252)는 형광체층(251)에 의해 완전히 변환되지 않은 청색광이나 자외선광을 차단할 수 있다. 또한, 인접한 제1 및 제3 발광셀(111P, 115P)로부터의 광을 차단함으로써 제2 발광셀(113P)로부터 출사되는 광의 혼색을 방지한다. 따라서, 본 발명의 일 실시예에 따르면, 파장변환기(250)에 형광체층(251) 및 컬러 필터(252)가 제공됨에 따라, 색 순도를 보다 향상시킬 수 있다.The color filter 252 can increase the color purity of light. Specifically, the color filter 252 can block blue light or ultraviolet light that has not been completely converted by the phosphor layer 251. In addition, by blocking the light from the adjacent first and third light emitting cells 111P and 115P, the light emitted from the second light emitting cell 113P is prevented from mixing. Accordingly, according to an embodiment of the present invention, since the phosphor layer 251 and the color filter 252 are provided in the wavelength converter 250, the color purity can be further improved.
본 발명의 일 실시예에 따르면, 발광셀(111P, 115P) 및 격벽(220) 상에는 보호층(240)이 제공될 수 있다. 보호층(240)은 파장변환기(250)이 제공되지 않은 개구(221, 223) 내부를 채우며, 격벽(220) 표면을 덮는 형태로 제공된다.According to an embodiment of the present invention, a protective layer 240 may be provided on the light emitting cells 111P and 115P and the barrier ribs 220. [ The protective layer 240 fills the openings 221 and 223 in which the wavelength converter 250 is not provided and is provided in a form covering the surface of the barrier ribs 220.
보호층(240)은 광학적으로 투명하다. 이에 따라, 발광셀(111P, 115P)로부터 출사되거나 파장변환기(250)을 거쳐 출사된 광은 보호층(240)을 투과하더라도 광학적 특성이 유지될 수 있다. 보호층(240)은 광학적으로 투명한 물질로 형성될 수 있다. 보호층(240)은 에폭시, 폴리실록산, 또는 포토레지스트 등으로 형성될 수 있다. 예를 들어, 폴리실록산 재료로는 PDMS(polydimethylsiloxane)을 들 수 있다. 그러나, 보호층(240)의 재료는 이에 한정되는 것은 아니며, HSSQ(Hydrogen Silsesquioxane), MSSQ(Methyksilsesquioxane), 폴리이미드, 디비닐실록산(Divinyl Siloxane), DVS-BCS(bis-Benzocyclobutane), PFCB(Perfluorocyclobutane), PAE(Polyarylene Ether) 등과 같은 재료가 사용될 수도 있다.The protective layer 240 is optically transparent. Accordingly, the light emitted from the light emitting cells 111P and 115P or emitted through the wavelength converter 250 can be maintained in optical characteristics even though the light passes through the protective layer 240. [ The protective layer 240 may be formed of an optically transparent material. The protective layer 240 may be formed of epoxy, polysiloxane, photoresist, or the like. For example, the polysiloxane material may be PDMS (polydimethylsiloxane). However, the material of the protective layer 240 is not limited to the HSSQ (Hydrogen Silsesquioxane), MSSQ (Methyksilsesquioxane), polyimide, divinyl siloxane, DVS-BCS (Bis- Benzocyclobutane), PFCB (Perfluorocyclobutane ), PAE (Polyarylene Ether), or the like may be used.
보호층(240)의 두께는 기판(210) 표시 장치 전체 두께를 고려하여 결정할 수 있다. 예컨대, 보호층(240)은 기판(210) 배면으로부터 보호층(240) 상면까지의 거리가 약 1mm이하가 되도록 제공될 수 있다. 보호층(240)을 상술한 정도의 두께로 제공함에 따라, 보호층(240) 아래의 발광셀(111P, 115P)을 보호하는 동시에 표시 장치를 박형화할 수 있다.The thickness of the protective layer 240 may be determined in consideration of the thickness of the entire display device of the substrate 210. For example, the protective layer 240 may be provided so that the distance from the back surface of the substrate 210 to the upper surface of the protective layer 240 is about 1 mm or less. By providing the protective layer 240 to the thicknesses described above, the light emitting cells 111P and 115P under the protective layer 240 can be protected and the display device can be thinned.
도 6은 본 발명의 일 실시예에 따른 발광셀을 도시한 단면도이며, 본 발명의 일 실시예에 있어서, 제1 내지 제3 발광셀(111P, 113P, 115P)로는 플립칩 타입의 발광 다이오드가 채용될 수 있는 바, 도 6은 본 발명의 일 실시예에 따른 플립칩 타입의 발광셀을 간략하게 도시한 단면도이다. 도 6에 도시된 발광셀은 제1 내지 제3 발광셀(111P, 113P, 115P) 중 어느 하나일 수 있으며, 본 실시예에서는 제1 발광셀(111P)을 예로서 설명하며, 하기한 도면에서는 발광셀(111)로 지칭한다. FIG. 6 is a cross-sectional view illustrating a light emitting cell according to an embodiment of the present invention. In an embodiment of the present invention, the first to third light emitting cells 111P, 113P, and 115P include flip chip type light emitting diodes FIG. 6 is a cross-sectional view schematically illustrating a flip chip type light emitting cell according to an embodiment of the present invention. 6 may be any one of the first through third light emitting cells 111P, 113P, and 115P. In this embodiment, the first light emitting cells 111P will be described as an example. In the following description, Emitting cell 111, as shown in FIG.
도 6을 참조하면, 발광셀(111)는 제1 도전형 반도체층(1110), 활성층(1112), 제2 도전형 반도체층(1114), 제1 콘택층(1116), 제2 콘택층(1118), 절연층(1120), 제1 단자(1122), 및 제2 단자(1124)를 포함한다.6, the light emitting cell 111 includes a first conductive semiconductor layer 1110, an active layer 1112, a second conductive semiconductor layer 1114, a first contact layer 1116, a second contact layer 1116, 1118, an insulating layer 1120, a first terminal 1122, and a second terminal 1124.
제1 도전형 반도체층(1110), 활성층(1112), 및 제2 도전형 반도체층(1114)은 반도체층으로 총칭할 수 있다. 반도체층의 종류는 발광셀이 출사하는 빛의 파장에 따라 달라질 수 있다. 일 실시예에서, 녹색 광을 방출하는 발광셀의 경우, 반도체층은 인듐 갈륨 질화물(InGaN), 갈륨 질화물(GaN), 갈륨 인화물(GaP), 알루미늄 갈륨 인듐 인화물(AlGaInP), 및 알루미늄 갈륨 인화물(AlGaP)을 포함할 수 있다. 일 실시예에서, 적색 광을 방출하는 발광셀의 경우, 반도체층은 갈륨 비소(aluminum gallium arsenide, AlGaAs), 갈륨 비소 인화물(gallium arsenide phosphide, GaAsP), 알루미늄 갈륨 인듐 인화물(aluminum gallium indium phosphide, AlGaInP), 및 갈륨 인화물(gallium phosphide, GaP)을 포함할 수 있다. 일 실시예에서, 청색 광을 방출하는 발광셀의 경우, 반도체층은 갈륨 질화물(GaN), 인듐 갈륨 질화물(InGaN), 및 아연 셀렌화물(zinc selenide, ZnSe)을 포함할 수 있다.The first conductive semiconductor layer 1110, the active layer 1112, and the second conductive semiconductor layer 1114 may be collectively referred to as a semiconductor layer. The type of the semiconductor layer may vary depending on the wavelength of light emitted from the light emitting cells. In one embodiment, in the case of a light emitting cell emitting green light, the semiconductor layer may be formed of indium gallium nitride (InGaN), gallium nitride (GaN), gallium phosphide (GaP), aluminum gallium indium phosphide (AlGaInP), and aluminum gallium phosphide AlGaP). In one embodiment, in the case of a light emitting cell that emits red light, the semiconductor layer may include at least one of aluminum gallium arsenide (AlGaAs), gallium arsenide phosphide (GaAsP), aluminum gallium indium phosphide (AlGaInP ), And gallium phosphide (GaP). In one embodiment, for a light emitting cell emitting blue light, the semiconductor layer may comprise gallium nitride (GaN), indium gallium nitride (InGaN), and zinc selenide (ZnSe).
제1 도전형 반도체층(1110)과 제2 도전형 반도체층(1114)은 서로 반대 극성을 띤다. 예를 들어, 제1 도전형이 n형인 경우, 제2 도전형은 p이며, 제2 도전형이 p형인 경우, 제2 도전형은 n형이 된다. 본 발명의 일 실시예에서는 제1 반도체층(1110)이 n형 반도체층(1110)이고, 제2 반도체층(1114)이 p형 반도체층(1114)일 수 있다. 이하에서는 n형 반도체층(1110), 활성층(1112), 및 p형 반도체층(1114)이 순차적으로 형성된 것을 일 예로 설명한다. The first conductivity type semiconductor layer 1110 and the second conductivity type semiconductor layer 1114 have opposite polarities. For example, when the first conductivity type is n-type, the second conductivity type is p, and when the second conductivity type is p-type, the second conductivity type is n-type. The first semiconductor layer 1110 may be an n-type semiconductor layer 1110 and the second semiconductor layer 1114 may be a p-type semiconductor layer 1114 in an embodiment of the present invention. Hereinafter, an example in which the n-type semiconductor layer 1110, the active layer 1112, and the p-type semiconductor layer 1114 are sequentially formed will be described as an example.
n형 반도체층(1110), 활성층(1112) 및 p형 반도체층(1114)은 Ⅲ-Ⅴ 계열 질화물계 반도체, 예를 들어, (Al, Ga, In)N과 같은 질화물계 반도체로 형성될 수 있다. n형 반도체층(1110), 활성층(1112) 및 p형 반도체층(1114)은 금속유기화학 기상 성장법(MOCVD)과 같은 공지의 방법을 이용하여 형성될 수 있다. 또한, n형 반도체층(1110)은 n형 불순물 (예를 들어, Si, Ge, Sn)을 포함하고, p형 반도체층(1114)은 p형 불순물(예를 들어, Mg, Sr, Ba)을 포함한다. 일 실시예에서, n형 반도체층(1110)은 도펀트로서 Si를 포함하는 GaN 또는 AlGaN을 포함할 수 있고, p형 반도체층(1114)은 도펀트로서 Mg을 포함하는 GaN 또는 AlGaN을 포함할 수 있다. The n-type semiconductor layer 1110, the active layer 1112 and the p-type semiconductor layer 1114 may be formed of a III-V nitride semiconductor, for example, a nitride semiconductor such as (Al, Ga, In) have. The n-type semiconductor layer 1110, the active layer 1112, and the p-type semiconductor layer 1114 can be formed using a known method such as metalorganic chemical vapor deposition (MOCVD). The p-type semiconductor layer 1114 includes a p-type impurity (for example, Mg, Sr, Ba) and an n-type semiconductor layer 1110. The n-type semiconductor layer 1110 includes n-type impurities (e.g., Si, Ge, . In one embodiment, the n-type semiconductor layer 1110 may comprise GaN or AlGaN containing Si as a dopant and the p-type semiconductor layer 1114 may comprise GaN or AlGaN containing Mg as a dopant .
도면에서 n형 반도체층(1110) 및 p형 반도체층(1114)이 각각 단일층인 것으로 도시하지만, 이들 층들은 다중층일 수 있으며, 또한 초격자층을 포함할 수도 있다. 활성층(1112)은 단일양자우물 구조 또는 다중양자우물 구조를 포함할 수 있고, 원하는 파장을 방출하도록 질화물계 반도체의 조성비가 조절된다. 예를 들어, 활성층(1112)은 청색광 또는 자외선을 방출할 수 있다.Although the n-type semiconductor layer 1110 and the p-type semiconductor layer 1114 are shown as a single layer in the drawing, these layers may be multilayered and may also include a superlattice layer. The active layer 1112 may include a single quantum well structure or a multiple quantum well structure, and the composition ratio of the nitride-based semiconductor is adjusted so as to emit a desired wavelength. For example, the active layer 1112 may emit blue light or ultraviolet light.
활성층(1112) 및 제2 도전형 반도체층(1114)이 제공되지 않은 제1 도전형 반도체층(1110) 상에는 제1 콘택층(1116)이 배치되고, 제2 도전형 반도체층(1114) 상에는 제2 콘택층(1118)이 배치된다. A first contact layer 1116 is disposed on the first conductivity type semiconductor layer 1110 where the active layer 1112 and the second conductivity type semiconductor layer 1114 are not provided and on the second conductivity type semiconductor layer 1114, 2 contact layer 1118 is disposed.
제1 및/또는 제2 콘택층(1116, 1118)은 단일 층, 또는 다중 층 금속으로 이루어질 수 있다. 제1 및/또는 제2 콘택층(1116, 1118)의 재료로는 Al, Ti, Cr, Ni, Au 등의 금속 및 이들의 합금 등이 사용될 수 있다. The first and / or second contact layers 1116 and 1118 may be comprised of a single layer, or a multilayer metal. As the material of the first and / or second contact layers 1116 and 1118, metals such as Al, Ti, Cr, Ni, and Au and alloys thereof may be used.
제1 및 제2 콘택층(1116, 1118) 상에는 절연층(1120)이 제공되며, 절연층(1120) 상에는 제1 콘택층(1116)과 컨택홀을 통해 연결된 제1 단자(1122)와, 제2 콘택층(1118)과 컨택홀을 통해 연결된 제2 단자(1124)가 제공된다. An insulating layer 1120 is provided on the first and second contact layers 1116 and 1118 and a first terminal 1122 is connected to the first contact layer 1116 through a contact hole on the insulating layer 1120, 2 contact layer 1118 and a second terminal 1124 connected through a contact hole.
제1 단자(1122)는 제2 도전성 접착층(163)을 통해 제1 연결 전극(121)과 제2 연결 전극(123) 중 하나에 연결되고, 제2 단자(1124)는 제2 도전성 접착층(163)을 통해 제1 연결 전극(121)과 제2 연결 전극(123) 중 나머지 하나에 연결될 수 있다. The first terminal 1122 is connected to one of the first connection electrode 121 and the second connection electrode 123 via the second conductive adhesive layer 163 and the second terminal 1124 is connected to the second conductive adhesive layer 163 To the other one of the first connection electrode 121 and the second connection electrode 123 through the first connection electrode 121 and the second connection electrode 123, respectively.
제1 및/또는 제2 단자(1122, 1124)는 단일 층, 또는 다중 층 금속으로 이루어질 수 있다. 제1 및/또는 제2 단자(1122, 1124)의 재료로는 Al, Ti, Cr, Ni, Au 등의 금속 및 이들의 합금 등이 사용될 수 있다. The first and / or second terminals 1122 and 1124 may be comprised of a single layer, or a multilayer metal. As the material of the first and / or second terminals 1122 and 1124, metals such as Al, Ti, Cr, Ni, and Au and alloys thereof may be used.
본 발명의 일 실시예에 있어서, 발광셀이 간단히 도면과 함께 설명되었으나, 발광셀은 상술한 층 이외에도 부가적인 기능을 갖는 층을 더 포함할 수 있다. 예를 들어, 광을 반사하는 반사층, 특정 구성 요소를 절연하기 위한 추가 절연층, 솔더의 확산을 방지하는 솔더 방지층, 등 다양한 층이 더 포함될 수 있다. In an embodiment of the present invention, the light emitting cell is described with reference to the drawings simply, but the light emitting cell may further include a layer having an additional function in addition to the above-described layer. For example, a reflective layer that reflects light, an additional insulating layer to isolate certain components, a solder barrier that prevents diffusion of the solder, and the like.
본 발명의 일 실시예에 있어서, 제1 도전형 반도체층(1110) 또는 n형 반도체층(1110)의 표면은 요철을 포함할 수 있다. 즉, 발광셀(111)에서 광이 출사되는 면에 요철이 포함될 수 있다. 상기 요철이 제공됨으로써, 광 추출 효율이 향상될 수 있다. 요철은 다각 피라미드, 반구, 랜덤하게 배치되되 거칠기를 갖는 면 등의 다양한 형태로 제공될 수 있다.In one embodiment of the present invention, the surface of the first conductivity type semiconductor layer 1110 or the n-type semiconductor layer 1110 may include irregularities. That is, irregularities may be included in a surface of the light emitting cell 111 on which light is emitted. By providing the unevenness, the light extraction efficiency can be improved. The concavities and convexities may be provided in various forms such as a polygonal pyramid, a hemisphere, and a surface having a roughness, which are randomly arranged.
상술한 예시 외에도 플립칩 타입의 발광셀(111)를 형성함에 있어, 다양한 형태로 메사를 형성할 수 있으며, 제1 및 제2 콘택층(1116, 1118)이나 제1 및 제2 단자(1122, 1124)의 위치나 형상 또한 다양하게 변경될 수 있음은 물론이다.The first and second contact layers 1116 and 1118 and the first and second terminals 1122 and 1122 may be formed in various shapes in forming the flip chip type light emitting cell 111. In addition, 1124 may also be varied in various ways.
본 발명의 일 실시예에 따르면 발광셀(111)는 버티컬 또는 수직형 발광셀일 수 있다. 발광셀(111)가 수직형 발광셀인 때에도, 제1 도전형 반도체층(1110), 활성층(1112), 및 제2 도전형 반도체층(1114)은 순차적으로 적층된 형태로 제공될 수 있다. 이때, 제1 도전형 반도체층(1110), 활성층(1112), 및 제2 도전형 반도체층(1114)에 관한 사항은 플립칩 타입 발광셀(111)에 관한 설명에서 서술한 바와 같다.According to an embodiment of the present invention, the light emitting cell 111 may be a vertical or vertical light emitting cell. The first conductivity type semiconductor layer 1110, the active layer 1112 and the second conductivity type semiconductor layer 1114 may be sequentially stacked even when the light emitting cell 111 is a vertical light emitting cell. At this time, matters relating to the first conductivity type semiconductor layer 1110, the active layer 1112, and the second conductivity type semiconductor layer 1114 are as described in the description of the flip chip type light emitting cell 111.
도 7a 및 도 7b는 본 발명의 일 실시예에 따른 화소를 도시한 평면도이다.7A and 7B are plan views illustrating pixels according to an embodiment of the present invention.
본 발명의 일 실시예에 따르면, 광 비투과층은 복수 개의 개구를 포함하고, 개구 각각에는 하나의 발광셀이 제공된다. 아울러, 동일한 화소 내에 제공된 발광셀들간 거리는 서로 다른 발광셀 화소 내에 제공된 발광셀들간 거리보다 짧다.According to one embodiment of the present invention, the light impervious layer comprises a plurality of openings, each of which is provided with one light emitting cell. In addition, the distance between the light emitting cells provided in the same pixel is shorter than the distance between the light emitting cells provided in the different light emitting cell pixels.
개구 내에 발광셀이 제공되었을 때, 발광셀과 개구 측벽간 거리는 개구간 거리에 비하여 상대적으로 작은 바, 이하에서는 서로 다른 개구 간의 거리를 기준으로 서술하고자 한다. 다만, 이하에서 개구 간 거리에 대하여 서술한 사항은 발광셀간 거리에 대한 내용에 동일하게 적용될 수 있다. 광 비투과층 측벽과 발광셀간 거리는 2㎛ 이하로 좁혀질 수 있는 바, 상대적으로 매우 짧은 거리이기 때문이다.When a light emitting cell is provided in the opening, the distance between the light emitting cell and the opening sidewall is relatively smaller than the distance between the openings. Hereinafter, the distance between the different openings will be described. However, in the following description, the description about the inter-aperture distance may be applied equally to the distance between the light emitting cells. The distance between the light non-transmissive layer side wall and the light emitting cell can be narrowed to 2 탆 or less, because it is a relatively short distance.
각각의 화소(110, 110', 110'')에는 제1 내지 제3 발광셀이 제공된다. 제1 발광셀은 제1 파장의 빛을 출사하며, 제2 발광셀은 제1 파장과 상이한 제2 파장의 광을 출사한다. 아울러, 제3 발광셀은 제1 파장과 상이한 제3 파장의 광을 출사한다. 따라서, 경우에 따라 제2 파장과 제3 파장은 동일할 수 있으며, 이 경우 제2 발광셀 또는 제3 발광셀 중 적어도 하나 상에는 파장변환기가 제공된다.Each of the pixels 110, 110 ', 110 " is provided with first to third light emitting cells. The first light emitting cell emits light of a first wavelength, and the second light emitting cell emits light of a second wavelength different from the first wavelength. In addition, the third light emitting cell emits light of a third wavelength different from the first wavelength. Accordingly, the second wavelength and the third wavelength may be the same depending on the case, and in this case, a wavelength converter is provided on at least one of the second light emitting cell or the third light emitting cell.
도 7a를 참고하면, 제1 화소(100)와 제2 화소(110') 및 제3 화소(110”) 각각에는 제1 발광셀(221, 221', 221''), 제2 발광셀(222, 222', 222''), 및 제3 발광셀(223, 223, 223'')가 제공될 수 있으며 각 화소(110, 110', 110'')은 삼각형을 이루는 형태로 배치될 수 있다.Referring to FIG. 7A, the first light emitting cells 221, 221 ', 221' ', and the second light emitting cells (not shown) are formed in the first pixel 100, the second pixel 110' 222, 222 ', 222 "and third light emitting cells 223, 223, 223" may be provided and each pixel 110, 110', 110 " have.
이때, 제1 화소(100) 내에 위치한 개구(221, 222, 223) 각각 사이의 최단 거리는 제1 화소(100) 내에 위치한 개구 중 하나와 다른 화소(110', 110'')에 위치한 개구 중 가장 인접한 개구까지의 최단 거리보다 짧다. 예를 들어, 제2 거리(D2) 및 제4 거리(D4)는 제1 거리(D1) 및 제3 거리(D3) 보다 작다. 이때, 제2 거리(D2)는 제1 개구(221)와 제3 개구(223)간 거리를 말하고, 제4 거리(D4)는 제2 개구(222)와 제3 개구(223)간 거리를 말한다. 아울러, 제1 거리(D1)는 제1 화소(100)의 제3 개구(223)와 제2 화소(110')의 제2 개구(222')간 거리를 말하고, 제3 거리(D3)는 제1 화소(100)의 제3 개구(223)와 제3 화소(110'')의 제1 개구(221'')간 거리를 말한다.At this time, the shortest distance between each of the openings 221, 222, and 223 located in the first pixel 100 is the shortest distance among the openings located in the pixels 110 'and 110 " Is shorter than the shortest distance to the adjacent opening. For example, the second distance D2 and the fourth distance D4 are smaller than the first distance D1 and the third distance D3. The second distance D2 is a distance between the first opening 221 and the third opening 223 and the fourth distance D4 is a distance between the second opening 222 and the third opening 223 It says. The first distance D1 is a distance between the third opening 223 of the first pixel 100 and the second opening 222 'of the second pixel 110', and the third distance D3 is a distance Refers to the distance between the third opening 223 of the first pixel 100 and the first opening 221 " of the third pixel 110 ".
이에 따라, 제1 화소(100)에 위치한 개구(221, 222, 223)로부터 출사된 빛은 상대적으로 쉽게 혼합될 수 있으며, 이에 따라 순도 높은 백색광이 구현될 수 있다. 그러나, 서로 다른 화소인 제1 화소(100)와 제2 화소(110') 또는 제1 화소(110')과 제3 화소(110'')에서 출사된 광은 서로 혼색되지 않는다. 이에 따라, 본 발명에 따른 표시 장치는 순도 높은 백색광을 출사할 수 있으면서도, 표시 장치를 보는 시야각에 따라 색이 달라지는 문제가 없다.Accordingly, light emitted from the openings 221, 222, and 223 located in the first pixel 100 can be relatively easily mixed with each other, thereby achieving high-purity white light. However, the light emitted from the first pixel 100, the second pixel 110 ', or the first pixel 110' and the third pixel 110 ', which are different pixels, are not mixed with each other. Thus, the display device according to the present invention can emit high-purity white light, but does not have a problem in that the color varies depending on the viewing angle of the display device.
도 7b를 참고하면, 제1 화소(100)와 제2 화소(110') 및 제3 화소(110”) 각각에는 제1 발광셀(221, 221', 221''), 제2 발광셀(222, 222', 222''), 및 제3 발광셀(223, 223, 223'')가 배치된다. 각 화소(110, 110', 110”) 내의 제1 발광셀 내지 상기 제3 발광셀은 일 방향을 따라 순차적으로 나란히 배치되고, 일 화소에 포함된 상기 제1 발광셀과 상기 제2 발광셀간 거리 및 상기 제2 발광셀과 상기 제3 발광셀간 거리는 서로 다른 상기 화소간 거리보다 작다.Referring to FIG. 7B, the first light emitting cells 221, 221 ', 221' ', and the second light emitting cells (not shown) are formed in the first pixel 100, the second pixel 110' 222, 222 ', 222 "and third light emitting cells 223, 223, 223" are arranged. The first light emitting cell to the third light emitting cell in each pixel 110, 110 ', 110 " are sequentially arranged along one direction, and the distance between the first light emitting cell and the second light emitting cell And the distance between the second light emitting cell and the third light emitting cell is smaller than the inter pixel distance.
예를 들어 각각의 화소(110, 110', 110'')에는 제1 발광셀(221, 221', 221''), 제2 발광셀(222, 222', 222''), 및 제3 발광셀(223, 223, 223'')가 순차적으로 나란하게 배치될 수 있다.For example, the first light emitting cells 221, 221 ', 221' ', the second light emitting cells 222, 222', 222 '', and the third light emitting cells 221, The light emitting cells 223, 223, and 223 " may be arranged in a sequential manner.
즉, 도 7b에서 제2 거리(D2) 및 제4 거리(D4)는 제1 거리(D1) 및 제3 거리(D3)보다 작다. 이때 제2 거리(D2)는 제2 화소(110')의 제1 개구(221')와 제2 개구(222')간 거리를 말하며, 제4 거리는 제2 화소(110')의 제2 개구(222')와 제3 개구(223')간 거리를 말한다. 아울러, 제1 거리(D1)는 제1 화소(100)의 제2 개구(222)와 제2 화소(110')의 제2 개구(222')간 거리를 말하며, 제3 거리(D3)는 제2 화소(110')의 제2 개구(222')와 제3 화소(110'')의 제2 개구(222'')간 거리를 말한다.That is, in FIG. 7B, the second distance D2 and the fourth distance D4 are smaller than the first distance D1 and the third distance D3. The second distance D2 is the distance between the first opening 221 'and the second opening 222' of the second pixel 110 'and the fourth distance is the distance between the second opening 110' Refers to the distance between the second opening 222 'and the third opening 223'. The first distance D1 is a distance between the second opening 222 of the first pixel 100 and the second opening 222 'of the second pixel 110', and the third distance D3 is a distance Refers to the distance between the second opening 222 'of the second pixel 110' and the second opening 222 '' of the third pixel 110 ".
앞서 설명한 것과 같이, 개구간 거리에 비하여 개구를 형성하는 광 비투과층 측벽으로부터 발광셀까지의 거리는 상대적으로 작기 때문에, 개구간 거리에 관한 사항은 발광셀간 거리에 관한 사항에 동일하게 적용될 수 있다.As described above, since the distance from the sidewall of the light non-permeable layer forming the opening to the light emitting cell is relatively smaller than the distance between the openings, the distance between the open apertures can be equally applied to the distance between the light emitting cells.
동일 화소 내에 제공된 개구 또는 발광셀간 거리가 서로 다른 화소 내에 제공된 개구 또는 발광셀간 거리보다 작기 때문에, 동일한 화소에 위치한 개구로부터 출사된 빛은 상대적으로 쉽게 혼합될 수 있으며, 이에 따라 순도 높은 백색광이 구현될 수 있다. 그러나, 서로 다른 화소인 제1 화소(100)와 제2 화소(110') 또는 제1 화소(110')과 제3 화소(110'')에서 출사된 광은 서로 혼색되지 않는다. 이에 따라, 본 발명에 따른 표시 장치는 순도 높은 백색광을 출사할 수 있으면서도, 표시 장치를 보는 시야각에 따라 색이 달라지는 문제가 없다.Light emitted from the openings located in the same pixel can be relatively easily mixed because the aperture or light emitting cell distance provided in the same pixel is smaller than the aperture or light emitting cell distance provided in different pixels, . However, the light emitted from the first pixel 100, the second pixel 110 ', or the first pixel 110' and the third pixel 110 ', which are different pixels, are not mixed with each other. Thus, the display device according to the present invention can emit high-purity white light, but does not have a problem in that the color varies depending on the viewing angle of the display device.
아울러, 동일한 화소 내에 제공된 발광셀간 거리는 발광셀이 출사하는 광의 종류에 따라 달라질 수 있다.In addition, the light emitting cell distance provided in the same pixel may vary depending on the type of light emitted from the light emitting cell.
구체적으로, 제1 발광셀이 적색광을 출사하고, 제2 발광셀이 녹색광을 출사하고, 제3 발광셀이 청색광을 출사하는 때에, 제1 발광셀 내지 제3 발광셀간에는 아래와 같은 거리 관계가 성립할 수 있다.Specifically, when the first light emitting cell emits red light, the second light emitting cell emits green light, and the third light emitting cell emits blue light, the following distance relationship is established between the first light emitting cell and the third light emitting cell can do.
먼저, 제1 발광셀과 제2 발광셀간 거리는 제1 발광셀과 제3 발광셀간 거리와 동일할 수 있다. 또한, 제1 발광셀과 제2 발광셀간 거리는 제2 발광셀과 제3 발광셀간 거리와 상이할 수 있다.First, the distance between the first light emitting cell and the second light emitting cell may be the same as the distance between the first light emitting cell and the third light emitting cell. The distance between the first light emitting cell and the second light emitting cell may be different from the distance between the second light emitting cell and the third light emitting cell.
상술한 거리 관계는 서로 상이한 파장의 빛을 출사하는 발광셀별 특징을 고려한 것이다. 상술한 것과 같이 발광셀을 배치함으로써, 순도 높은 백색광을 형성하면서도 불필요한 혼색을 방지할 수 있다. The above-described distance relationship considers the characteristic of each light emitting cell that emits light of a different wavelength. By arranging the light emitting cells as described above, unnecessary color mixing can be prevented while forming high-purity white light.
본 발명의 일 실시예에 따르면, 상술한 구조를 갖는 표시 장치는 본 발명의 개념에서 벗어나지 않는 한도 내에서 다양한 형태로 구현될 수 있다. 도 8a 내지 도 8d는 본 발명의 일 실시예에 따른 표시 장치를 도시한 단면도이다.According to an embodiment of the present invention, a display device having the above-described structure may be implemented in various forms within a scope not departing from the concept of the present invention. 8A to 8D are cross-sectional views illustrating a display device according to an embodiment of the present invention.
도 8a를 참고하면, 개구(221, 222, 223) 내에는 반사층(224)이 제공될 수 있다. 반사층은(224)은 개구(223)를 형성하는 격벽(220) 측벽을 덮는 형태로 제공된다. 아울러, 반사층(224)은 기판(210)의 일부를 덮는 형태로 제공될 수 있다. 본 발명의 일 실시예에 있어서, 반사층(224)의 기판(210)의 일부를 덮는 때에도, 반사층(224)과 발광셀(115P)는 접촉하지 않는다.Referring to FIG. 8A, a reflective layer 224 may be provided in the openings 221, 222, and 223. The reflective layer 224 is provided in a form covering the sidewall of the partition wall 220 forming the opening 223. In addition, the reflective layer 224 may be provided to cover a part of the substrate 210. The reflective layer 224 and the light emitting cell 115P do not contact each other even when a part of the substrate 210 of the reflective layer 224 is covered in the embodiment of the present invention.
격벽(220) 측벽에 반사층(224)이 제공되는 때, 동일한 화소 내에 제공된 각 발광셀과 개구의 측벽간 거리는 약 5㎛ 미만일 수 있다. 이 경우 반사층(224)이 광을 반사하는 바, 발광셀로부터 출사된 빛이 격벽(220)을 투과할 우려가 없다.When the reflective layer 224 is provided on the sidewalls of the barrier ribs 220, the distance between the sidewalls of each of the light emitting cells and the openings provided in the same pixel may be less than about 5 占 퐉. In this case, since the reflection layer 224 reflects light, there is no fear that the light emitted from the light-emitting cells will pass through the barrier ribs 220.
반사층(224)은 은(Ag), 알루미늄(Al), 구리(Cu), 백금(Pt), 금(Au) 등의 금속을 포함할 수 있다. 반사층(224)의 두께는 (뭐보다?) 상대적으로 얇다. 반사층(224)은 화학 증기 증착법(CVD), 플라즈마 화학 증착법(PECVD), 물리 기상 증착법(PVD), 원자층 증착법(ALD) 등을 이용하여 박막을 형성한 후 여러 가지 패터닝 방법을 이용하여 형성할 수 있다.The reflective layer 224 may include metals such as silver (Ag), aluminum (Al), copper (Cu), platinum (Pt), and gold (Au) The thickness of the reflective layer 224 is relatively thin. The reflective layer 224 may be formed using a variety of patterning methods after a thin film is formed using chemical vapor deposition (CVD), plasma chemical vapor deposition (PECVD), physical vapor deposition (PVD), atomic layer deposition (ALD) .
도 8b를 참고하면, 보호층(240) 상에 차광부(260) 및 확산판(270)이 더 제공될 수 있다.Referring to FIG. 8B, a light shield 260 and a diffusion plate 270 may be further provided on the protective layer 240.
차광부(260)는 개구(221, 222, 223)와 평면상에서 중첩되지 않도록 제공될 수 있는 바, 발광셀(111P, 113P, 115P)로부터 출사되는 전체 광량에는 영향을 미치지 않는다. 차광부(260)는 블랙 광감성 레지스트로 이루어질 수 있다. 차광부(260)가 블랙 광감성 레지스트로 이루어지는 경우, 포토리소그래피를 이용한 패터닝이 용이하다. 그러나, 차광부(260)의 재료는 이에 한정되는 것은 아니며 다양한 재료로 구성될 수 있다.The light shielding portion 260 can be provided so as not to overlap with the openings 221, 222 and 223 in the plan view and does not affect the total amount of light emitted from the light emitting cells 111P, 113P and 115P. The light shielding portion 260 may be formed of a black light sensitive resist. When the light shielding portion 260 is made of a black light sensitive resist, patterning using photolithography is easy. However, the material of the light-shielding portion 260 is not limited thereto and may be composed of various materials.
차광부(260)는 격벽(220)과 이격되어 제공되는데, 격벽(220)과 함께 발광셀로부터 출사된 빛이 불필요하게 혼색되는 것을 방지한다.The light shielding portion 260 is provided to be spaced apart from the barrier ribs 220 to prevent unnecessary mixing of light emitted from the light emitting cells together with the barrier ribs 220.
확산판(270)은 발광셀로부터 출사된 빛을 굴절시켜 확산시킨다. 이에 따라, 발광셀로부터 출사된 빛의 시야각이 더 커질 수 있다. The diffusion plate 270 refracts and diffuses the light emitted from the light emitting cells. Thus, the viewing angle of the light emitted from the light emitting cells can be larger.
확산판(270)은 HSSQ(Hydrogen Silsesquioxane), MSSQ(Methyksilsesquioxane), 폴리이미드, 디비닐실록산(Divinyl Siloxane), DVS-BCS(bis-Benzocyclobutane), PFCB(Perfluorocyclobutane), PAE(Polyarylene Ether), PMMA(Polymethylmethacrylate), PDMS(Polydimethylsiloxane)과 같은 투명 고분자를 이용하여 형성할 수 있다.The diffusion plate 270 may be formed of one or more materials selected from the group consisting of HSSQ (Hydrogen Silsesquioxane), MSSQ (Methyksilsesquioxane), polyimide, divinyl siloxane, DVS-BCS (bis-Benzocyclobutane), PFCB (Perfluorocyclobutane) Polymethylmethacrylate (PDMS), and Polydimethylsiloxane (PDMS).
도 8b를 참고하면, 개구(221, 222, 223)는 기판(210)으로부터 멀어질수록 폭이 커지는 형상을 갖는다. 구체적으로, 개구(221)의 하부 폭(W2)은 개구(221)의 상부 폭(W1)보다 작을 수 있다. 이에 따라, 개구(221, 222, 223) 사이에 제공된 격벽(220)은 단면이 뒤집어진 사다리꼴 형상을 가질 수 있다. 구체적으로, 격벽(220)의 폭은 기판(210)으로부터 멀어짐에 따라 증가할 수 있다.Referring to FIG. 8B, the openings 221, 222, and 223 have a shape that increases in width as the distance from the substrate 210 increases. Specifically, the lower width W2 of the opening 221 may be smaller than the upper width W1 of the opening 221. Accordingly, the partition 220 provided between the openings 221, 222, and 223 may have a trapezoidal shape in which the cross section is inverted. Specifically, the width of the barrier rib 220 may increase as the distance from the substrate 210 increases.
개구(221, 222, 223)가 상술한 형상을 가짐에 따라, 발광셀(111P, 113P, 115P)로부터 출사된 광의 불필요한 혼색을 방지하는 동시에 더 넓은 시야각을 확보할 수 있다.As the openings 221, 222, and 223 have the above-described shapes, it is possible to prevent unwanted color mixing of light emitted from the light emitting cells 111P, 113P, and 115P and to secure a wider viewing angle.
도 8c에 따르면, 확산판(270) 상에 윈도우층(280)이 더 제공된다. 윈도우층(280)은 유리, 아크릴 등을 포함할 수 있으며, 광학적으로 투명하다. 따라서, 윈도우층(280)은 발광셀로부터 출사된 빛의 광학적 성질에 영향을 미치지 않는다. 아울러, 윈도우층(280)은 가요성(Flexibility)을 가질 수 있다.According to Fig. 8C, a window layer 280 is further provided on the diffusion plate 270. Fig. The window layer 280 may comprise glass, acrylic, or the like, and is optically transparent. Thus, the window layer 280 does not affect the optical properties of the light emitted from the light emitting cells. In addition, the window layer 280 may have flexibility.
윈도우층(280)은 발광셀 등을 보호하는 동시에, 지지체로 기능할 수 있다. 구체적으로, 격벽(220)은 윈도우층(280) 상에 지지될 수 있다. The window layer 280 can function as a support while protecting the light emitting cells and the like. Particularly, the barrier ribs 220 can be supported on the window layer 280.
아울러, 일 실시예에 따르면, 제1 발광셀 내지 제3 발광셀(111P, 113P, 115P)는 윈도우층(280)에 지지된다. 윈도우층(280)에는 복수 개의 발광셀이 지지될 수 있는데, 하나의 윈도우층(280)에 1개 내지 100개의 발광셀이 지지될 수 있다. 따라서, 복수 개의 발광셀이 지지되어 있는 윈도우층(280) 여러 개를 기판(210)에 부착함으로써, 해상도가 높은 표시 장치를 쉽게 구현할 수 있다.In addition, according to one embodiment, the first to third light emitting cells 111P, 113P, and 115P are supported on the window layer 280. [ A plurality of light emitting cells may be supported on the window layer 280. One to 100 light emitting cells may be supported on one window layer 280. [ Therefore, by attaching the plurality of window layers 280 on which the plurality of light emitting cells are supported to the substrate 210, a display device with high resolution can be easily implemented.
도 8d에 따르면, 제1 발광셀 내지 제3 발광셀(111P, 113P, 115P) 상에 파장변환기(250, 250', 250'')이 제공된다. 이때, 제1 발광셀 내지 제3 발광셀(111P, 113P, 115P)는 모두 동일한 파장의 광을 출사할 수 있다. 아울러, 제1 발광셀 내지 제3 발광셀(111P, 113P, 115P)의 반도체층은 알루미늄 갈륨 인듐 질화물(AlGaInN)을 포함할 수 있다.Referring to FIG. 8D, wavelength converters 250, 250 'and 250' 'are provided on the first to third light emitting cells 111P, 113P and 115P. At this time, the first to third light emitting cells 111P, 113P, and 115P can emit light having the same wavelength. In addition, the semiconductor layers of the first to third light emitting cells 111P, 113P, and 115P may include aluminum gallium indium nitride (AlGaInN).
제1 발광셀 내지 제3 발광셀(111P, 113P, 115P)이 동일한 파장의 광을 출사할 때, 각 발광셀 상에는 서로 다른 파장변환기(250, 250', 250'')이 제공된다. 이들 파장변환기(250, 250', 250'')은 발광셀로부터 출사된 빛을 수광하여 각기 다른 파장으로 변환한다. 이에 따라, 하나의 화소로부터 적색광, 청색광, 녹색광이 출사될 수 있다.When the first to third light emitting cells 111P, 113P, and 115P emit light having the same wavelength, different wavelength converters 250, 250 ', and 250' 'are provided on the respective light emitting cells. These wavelength converters 250, 250 ', 250' 'receive the light emitted from the light emitting cells and convert them into different wavelengths. Accordingly, red light, blue light, and green light can be emitted from one pixel.
본 발명의 일 실시예에 있어서, 상술한 제1 내지 제3 발광셀은 실장 및 교체가 용이하고 최적의 발광 효율로 동작할 수 있도록 다양한 형태로 구성이 달라질 수 있다. 이하의 실시예에 있어서, “제1”, “제2”, “제3” 등의 용어는 설명의 편의를 위해 상술한 실시예에서와 다른 구성 요소에 부여될 수 있다. In one embodiment of the present invention, the first to third light emitting cells may be configured in various forms to facilitate mounting and replacement and to operate with optimal light emitting efficiency. In the following embodiments, terms such as " first ", " second ", " third ", and the like can be given to components other than those in the above-
도 9은 본 발명의 일 실시예에 따른 화소(100)를 설명하기 위한 개략적인 평면도이고, 도 10는 도 9의 절취선 A-A를 따라 취해진 개략적인 단면도이다.FIG. 9 is a schematic plan view for explaining a pixel 100 according to an embodiment of the present invention, and FIG. 10 is a schematic cross-sectional view taken along a perforated line A-A in FIG.
도 9 및 도 10를 참조하면, 화소(100), 즉 발광 소자는 기판(21), 제1 발광셀(30a), 제2 발광셀(30b), 제3 발광셀(30c), 투명 전극층(31), 패드들(33a, 33b), 제1 파장변환기(51a), 제2 파장변환기(51b), 제3 파장변환기(51c), 제1 컬러 필터(53a), 제2 컬러 필터(53b), 제3 컬러 필터(53c) 및 격벽(55, 또는 격벽)을 포함할 수 있다. 제1 내지 제3 발광셀들(30a, 30b, 30c)은 각각 제1 도전형 반도체층(23), 활성층(25) 및 제2 도전형 반도체층(27)을 포함한다. 또한, 상기 화소(100)는 서브 화소들(10B, 10G, 10R)을 포함하는데, 서브 화소들(10B, 10G, 10R)은 각각 발광셀(30a, 30b, 30c), 파장변환기(51a, 51b, 51c) 및 컬러 필터(53a, 53b, 53c)를 포함한다.9 and 10, a pixel 100, that is, a light emitting device includes a substrate 21, a first light emitting cell 30a, a second light emitting cell 30b, a third light emitting cell 30c, a transparent electrode layer A first wavelength converter 51a, a second wavelength converter 51b, a third wavelength converter 51c, a first color filter 53a, a second color filter 53b, A third color filter 53c, and a barrier 55 (or barrier). The first to third light emitting cells 30a, 30b and 30c include a first conductive semiconductor layer 23, an active layer 25 and a second conductive semiconductor layer 27, respectively. The pixel 100 includes the sub-pixels 10B, 10G and 10R and the sub-pixels 10B, 10G and 10R are connected to the light emitting cells 30a, 30b and 30c, the wavelength converters 51a and 51b , 51c, and color filters 53a, 53b, 53c.
기판(21)은 질화갈륨계 반도체층을 성장시킬 수 있는 기판이면 특별히 제한되지 않는다. 기판(21)의 예로는 사파이어 기판, 질화갈륨 기판, SiC 기판 등 다양할 수 있으며, 패터닝된 사파이어 기판일 수 있다. 기판(21)은 도 9의 평면도에서 보듯이 직사각형 또는 정사각형의 외형을 가질 수 있으나, 반드시 이에 한정되는 것은 아니다. 기판(21)의 크기는 요구되는 화소의 크기에 따라 정해질 수 있다. 예를 들어, 기판(21)의 긴 변의 크기는 400um 이하일 수 있으며, 나아가 100um 이하일 수도 있다.The substrate 21 is not particularly limited as long as it is a substrate capable of growing a gallium nitride-based semiconductor layer. Examples of the substrate 21 include a sapphire substrate, a gallium nitride substrate, a SiC substrate, and the like, and may be a patterned sapphire substrate. The substrate 21 may have a rectangular or square shape as shown in the plan view of FIG. 9, but is not limited thereto. The size of the substrate 21 can be determined according to the required pixel size. For example, the length of the long side of the substrate 21 may be 400um or less, and may be 100um or less.
제1 내지 제3 발광셀들(30a, 30b, 30c)은 서로 이격되어 배치된다. 도 9에 도시한 바와 같이, 제1 내지 제3 발광셀들(30a, 30b, 30c)은 서로 다른 면적을 가진다. 제2 발광셀(30b)은 제1 발광셀(30a)보다 더 큰 면적을 가지며, 제3 발광셀(30c)은 제2 발광셀(30b)보다 더 큰 면적을 가진다. 제1 내지 제3 발광셀들(30a, 30b, 30c)의 면적은 파장변환기들(51a, 51b, 51c)의 광 변환 효율을 고려하여 결정될 수 있으며, 이에 대해서는 후술한다.The first to third light emitting cells 30a, 30b, and 30c are spaced apart from each other. As shown in FIG. 9, the first to third light emitting cells 30a, 30b, and 30c have different areas. The second light emitting cell 30b has a larger area than the first light emitting cell 30a and the third light emitting cell 30c has a larger area than the second light emitting cell 30b. The areas of the first to third light emitting cells 30a, 30b and 30c can be determined in consideration of the light conversion efficiency of the wavelength converters 51a, 51b and 51c, which will be described later.
한편, 제1 내지 제3 발광셀들(30a, 30b, 30c)은 서로 이웃하여 배치될 수 있다. 즉, 제1 발광셀(30a)은 제2 및 제3 발광셀(30b, 30c)에 이웃하고, 제2 발광셀(30b)은 제1 및 제3 발광셀(30a, 30c)에 이웃하며, 제3 발광셀(30c)은 제1 발광셀 및 제2 발광셀(30a, 30b)에 이웃할 수 있다. 도 9에 도시한 바와 같이, 제3 발광셀(30c)의 장축을 따라 제1 및 제2 발광셀들(30a, 30b)이 배열될 수 있다. 그러나 본 발명이 이에 한정되는 것은 아니며, 다른 형태로 다양하게 배열될 수 있다. 예를 들어, 하나의 발광셀이 다른 두 개의 발광셀들 사이에 배치될 수도 있다. 또한, 상기 제1 내지 제3 발광셀들(30a, 30b, 30c)은 직사각형 형상을 가질 수 있으나, 이에 한정되는 것은 아니며, 다양한 형상을 가질 수 있다.Meanwhile, the first to third light emitting cells 30a, 30b, and 30c may be disposed adjacent to each other. That is, the first light emitting cell 30a is adjacent to the second and third light emitting cells 30b and 30c, the second light emitting cell 30b is adjacent to the first and third light emitting cells 30a and 30c, The third light emitting cell 30c may be adjacent to the first light emitting cell 30a and the second light emitting cell 30b. As shown in FIG. 9, the first and second light emitting cells 30a and 30b may be arranged along the long axis of the third light emitting cell 30c. However, the present invention is not limited thereto, and may be variously arranged in other forms. For example, one light emitting cell may be disposed between two different light emitting cells. Also, the first to third light emitting cells 30a, 30b, and 30c may have a rectangular shape, but are not limited thereto and may have various shapes.
제1 내지 제3 발광셀들(30a, 30b, 30c)은 각각 제1 도전형 반도체층(23), 활성층(25) 및 제2 도전형 반도체층(27)을 포함한다. 제1 도전형 반도체층(23)은 기판(21) 상에 배치된다. 제1 도전형 반도체층(23)은 기판(21) 상에서 성장된 층으로, 불순물, 예컨대 Si이 도핑된 질화갈륨계 반도체층일 수 있다.The first to third light emitting cells 30a, 30b and 30c include a first conductive semiconductor layer 23, an active layer 25 and a second conductive semiconductor layer 27, respectively. The first conductive type semiconductor layer 23 is disposed on the substrate 21. The first conductivity type semiconductor layer 23 may be a layer grown on the substrate 21 and may be a gallium nitride based semiconductor layer doped with an impurity such as Si.
제1 도전형 반도체층(23) 상에 활성층(25) 및 제2 도전형 반도체층(27)이 배치된다. 활성층(25)은 제1 도전형 반도체층(23)과 제2 도전형 반도체층(27) 사이에 배치된다. 활성층(25) 및 제2 도전형 반도체층(27)은 제1 도전형 반도체층(23)보다 작은 면적을 가질 수 있다. 활성층(25) 및 제2 도전형 반도체층(27)이 부분적으로 제거되어 제1 도전형 반도체층(23)의 일부가 노출될 수 있다.The active layer 25 and the second conductivity type semiconductor layer 27 are disposed on the first conductivity type semiconductor layer 23. The active layer 25 is disposed between the first conductivity type semiconductor layer 23 and the second conductivity type semiconductor layer 27. The active layer 25 and the second conductivity type semiconductor layer 27 may have a smaller area than the first conductivity type semiconductor layer 23. The active layer 25 and the second conductivity type semiconductor layer 27 may be partially removed and a portion of the first conductivity type semiconductor layer 23 may be exposed.
활성층(25)은 단일 양자우물 구조 또는 다중 양자우물 구조를 가질 수 있다. 활성층(25) 내에서 우물층의 조성 및 두께는 생성되는 광의 파장을 결정한다. 특히, 우물층의 조성을 조절함으로써 자외선 또는 청색광을 생성하는 활성층을 제공할 수 있다. 본 실시예에서, 제1 발광셀(30a), 제2 발광셀(30b) 및 제3 발광셀(30c)의 활성층들(25)은 모두 동일 조건하에서 동일 기판(21) 상에서 성장된 것으로 동일 조성 및 두께를 가지며, 이에 따라 동일한 파장의 광을 방출한다.The active layer 25 may have a single quantum well structure or a multiple quantum well structure. The composition and thickness of the well layer in the active layer 25 determine the wavelength of the generated light. In particular, by controlling the composition of the well layer, it is possible to provide an active layer that generates ultraviolet light or blue light. In this embodiment, the active layers 25 of the first, second and third light emitting cells 30a, 30b and 30c are grown on the same substrate 21 under the same conditions, And thus, emits light of the same wavelength.
한편, 제2 도전형 반도체층(27)은 p형 불순물, 예컨대 Mg이 도핑된 질화갈륨계 반도체층일 수 있다. 제1 도전형 반도체층(23) 및 제2 도전형 반도체층(27)은 각각 단일층일 수 있으나, 이에 한정되는 것은 아니며, 다중층일 수도 있으며, 초격자층을 포함할 수도 있다. 제1 도전형 반도체층(23), 활성층(25) 및 제2 도전형 반도체층(27)은 금속유기화학 기상 성장법(MOCVD) 또는 분자선 에피택시(MBE)와 같은 공지의 방법을 이용하여 챔버 내에서 기판(21) 상에 성장되어 형성될 수 있다.On the other hand, the second conductivity type semiconductor layer 27 may be a p-type impurity, for example, a gallium nitride based semiconductor layer doped with Mg. Although the first conductive semiconductor layer 23 and the second conductive semiconductor layer 27 may each be a single layer, the present invention is not limited thereto, and may be a multiple layer or a superlattice layer. The first conductivity type semiconductor layer 23, the active layer 25 and the second conductivity type semiconductor layer 27 are formed by a known method such as metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) And may be formed on the substrate 21 by growing.
투명 전극층(31)은 제2 도전형 반도체층(27) 상에 배치되어 제2 도전형 반도체층(27)에 오믹 접촉한다. 투명 전극층(31)은 예를 들어 Ni/Au, ITO 또는 ZnO를 포함할 수 있다.The transparent electrode layer 31 is disposed on the second conductivity type semiconductor layer 27 and is in ohmic contact with the second conductivity type semiconductor layer 27. The transparent electrode layer 31 may include, for example, Ni / Au, ITO, or ZnO.
한편, 제1 내지 제3 발광셀들(30a, 30b, 30c) 상에 각각 제1 패드(33a) 및 제2 패드(33b)가 배치된다. 제1 패드들(33a) 및 제2 패드들(33b)은 도 9에 도시한 바와 같이, 기판(21)의 가장자리 근처에 배치될 수 있으며, 이에 따라, 회로 기판 등에 실장할 때, 와이어를 연결하기 쉽다. 제1 패드(33a)는 제1 도전형 반도체층(23)에 전기적으로 접속하고, 제1 패드(33b)는 제2 도전형 반도체층(27)에 전기적으로 접속한다. 제1 패드(33a)는 제2 도전형 반도체층(27) 및 활성층(25)이 부분적으로 제거되어 노출된 제1 도전형 반도체층(23) 상에 배치될 수 있으며, 제2 패드(33b)는 투명 전극층(31) 상에 배치될 수 있다. On the other hand, the first pad 33a and the second pad 33b are disposed on the first through third light emitting cells 30a, 30b, and 30c, respectively. The first pads 33a and the second pads 33b may be disposed near the edge of the substrate 21 as shown in Fig. 9, so that when mounted on a circuit board or the like, easy to do. The first pad 33a is electrically connected to the first conductivity type semiconductor layer 23 and the first pad 33b is electrically connected to the second conductivity type semiconductor layer 27. [ The first pad 33a may be disposed on the first conductive semiconductor layer 23 exposed by partially removing the second conductive semiconductor layer 27 and the active layer 25 and may be disposed on the second pad 33b, May be disposed on the transparent electrode layer 31.
제1 파장변환기(51a)는 제1 발광셀(30a) 상부에 배치되고, 제2 파장변환기(51b)는 제2 발광셀(30b) 상부에 배치되며, 제3 파장변환기(51c)는 제3 발광셀(30c) 상부에 배치된다. 제1 내지 제3 파장변환기들(51a, 51b, 51c)은 각각 투명 전극층(31) 상에 위치할 수 있다.The first wavelength converter 51a is disposed on the first light emitting cell 30a and the second wavelength converter 51b is disposed on the second light emitting cell 30b and the third wavelength converter 51c is disposed on the third Emitting cell 30c. The first to third wavelength converters 51a, 51b, and 51c may be positioned on the transparent electrode layer 31, respectively.
제1 파장변환기(51a)는 제1 발광셀(30a)에서 방출되는 광의 파장을 변환하며, 제2 파장변환기(51b)는 제2 발광셀(30b)에서 방출되는 광의 파장을 변환하고 제3 파장변환기(51c)는 제3 발광셀(30c)에서 방출되는 광의 파장을 변환한다. 여기서, 제2 파장변환기(51b)는 제1 파장변환기(51a)보다 더 장파장으로 광을 변환하며, 제3 파장변환기(51c)는 제2 파장변환기(51b)보다 더 장파장으로 광을 변환한다. 예를 들어, 제1 내지 제3 발광셀들(30a, 30b, 30c)는 자외선을 방출할 수 있으며, 제1 파장변환기(51a)는 자외선을 청색광으로 변환하고, 제2 파장변환기(51b)는 자외선을 녹색광으로 변환하고, 제3 파장변환기(51c)는 자외선을 적색광으로 변환할 수 있다.The first wavelength converter 51a converts the wavelength of the light emitted from the first light emitting cell 30a and the second wavelength converter 51b converts the wavelength of the light emitted from the second light emitting cell 30b, The converter 51c converts the wavelength of the light emitted from the third light emitting cell 30c. Here, the second wavelength converter 51b converts light to a wavelength longer than that of the first wavelength converter 51a, and the third wavelength converter 51c converts light to a wavelength longer than that of the second wavelength converter 51b. For example, the first to third light emitting cells 30a, 30b, and 30c may emit ultraviolet rays, the first wavelength converter 51a converts ultraviolet light into blue light, and the second wavelength converter 51b The ultraviolet light is converted into green light, and the third wavelength converter 51c is capable of converting ultraviolet light into red light.
한편, 제1 컬러 필터(53a), 제2 컬러 필터(53b) 및 제3 컬러 필터(53c)가 각각 제1 내지 제3 파장변환기(51a, 51b, 51c) 상에 배치되어 파장변환기에서 방출되는 광을 필터링한다. 예를 들어, 제1 컬러 필터(53a)는 청색광 이외의 광을 필터링하고, 제2 컬러 필터(53b)는 녹색광 이외의 광을 필터링하며, 제3 컬러 필터(53c)는 적색광 이외의 광을 필터링한다. 상기 제1 내지 제3 컬러 필터(53a, 53b, 53c)를 사용함으로써 청색광, 녹색광 및 적색광의 색 순도를 향상시킬 수 있다.On the other hand, when the first color filter 53a, the second color filter 53b and the third color filter 53c are disposed on the first to third wavelength converters 51a, 51b and 51c, respectively, And filters the light. For example, the first color filter 53a filters light other than blue light, the second color filter 53b filters light other than green light, and the third color filter 53c filters light other than red light do. By using the first to third color filters 53a, 53b, and 53c, the color purity of blue light, green light, and red light can be improved.
본 실시예에서, 상기 활성층(25)이 자외선을 방출하는 것을 예로 설명하지만, 상기 활성층(25)은 청색광을 방출할 수도 있다. 이 경우, 상기 제1 파장변환기(51a)는 생략될 수 있으며, 투명 수지가 제1 파장변환기(51a) 대신 배치될 수 있다. 한편, 제2 파장변환기(51b)는 청색광을 녹색광으로 변환하고, 제3 파장변환기(51c)는 청색광을 적색광으로 변환한다.In the present embodiment, the active layer 25 emits ultraviolet rays. However, the active layer 25 may emit blue light. In this case, the first wavelength converter 51a may be omitted, and a transparent resin may be disposed instead of the first wavelength converter 51a. On the other hand, the second wavelength converter 51b converts blue light into green light, and the third wavelength converter 51c converts blue light into red light.
한편, 격벽(55)이 제1 내지 제3 발광셀들(30a, 30b, 30c) 사이에 배치된다. 격벽(55)은 또한, 각 발광셀들을 둘러쌀 수 있다. 격벽(55)은 또한 파장변환기들(51a, 51b, 51c) 사이에도 배치될 수 있다.Meanwhile, the barrier ribs 55 are disposed between the first to third light emitting cells 30a, 30b, and 30c. The barrier 55 may also surround each light emitting cell. The barrier ribs 55 may also be disposed between the wavelength converters 51a, 51b and 51c.
격벽(55)은 하나의 발광셀에서 방출된 광이 다른 발광셀측으로 진행하는 것을 차단하여 서브 화소들(10B, 10G, 10R)간의 광 간섭을 방지한다. 격벽(55)은 발광셀들 사이의 영역을 채울 수 있으나, 이에 한정되는 것은 아니다. 격벽(55)은 광을 반사시킬 수 있는 백색 수지 또는 감광성 솔더 레지스트로 형성될 수 있다.The barrier ribs 55 prevent the light emitted from one light emitting cell from progressing toward the other light emitting cell to prevent optical interference between the sub pixels 10B, 10G and 10R. The barrier ribs 55 may fill an area between the light emitting cells, but are not limited thereto. The barrier ribs 55 may be formed of a white resin or a photosensitive solder resist capable of reflecting light.
본 실시예의 화소는 3개의 서브 화소(10B, 10G, 10R)을 가지며, 이들 서브 화소가 기판(21) 상에 고정된다. 예를 들어, 서브 화소(10B)은 발광셀(10a)에 의해 또는 제1 발광셀(10a)와 제1 파장변환기(51a)의 조합에 의해 청색광을 구현하고, 서브 화소(10G)은 제2 발광셀(10b)와 제2 파장변환기(51b)의 조합에 의해 녹색광을 구현하며, 서브 화소(10R)은 제3 발광셀(10c)와 제3 파장변환기(51c)의 조합에 의해 적색광을 구현할 수 있다.The pixel of this embodiment has three sub-pixels 10B, 10G, and 10R, and these sub-pixels are fixed on the substrate 21. [ For example, the sub-pixel 10B implements blue light by the light-emitting cell 10a or by the combination of the first light-emitting cell 10a and the first wavelength converter 51a, and the sub- The green light is realized by the combination of the light emitting cell 10b and the second wavelength converter 51b and the sub pixel 10R realizes the red light by the combination of the third light emitting cell 10c and the third wavelength converter 51c .
본 실시예에 따르면, 기판(21)과 함께 3개의 서브 화소(10B, 10G, 10R)이 함께 회로 기판 등에 실장될 수 있다. 종래 마이크로 LED의 경우, 개별 서브 화소를 실장하기 때문에 공정 수가 많고 실장 공정을 수행하기 어렵다. 이에 반해, 본 실시예에서는 하나의 화소가 3개의 서브 화소들을 포함하여 하나의 발광 소자로 구현되기 때문에 발광 소자의 크기가 마이크로 LED에 비해 상대적으로 더 크게 되고 따라서 실장 공정 수가 줄고, 실장이 쉬워진다.According to this embodiment, the three sub-pixels 10B, 10G and 10R together with the substrate 21 can be mounted together on a circuit board or the like. In the conventional micro LED, since the individual sub-pixels are mounted, the number of steps is large and the mounting process is difficult to perform. On the other hand, in the present embodiment, since one pixel includes three sub-pixels and is implemented as one light emitting device, the size of the light emitting device is relatively larger than that of the micro LED, so that the number of mounting processes is reduced, .
한편, 본 실시예에서 제1 내지 제3 발광셀들(30a, 30b, 30c)은 서로 다른 면적을 점유한다. 또한, 이들 발광셀들 상에 배치되는 파장변환기(51a, 51b, 51c)도 서로 다른 면적을 점유한다. 발광셀들의 상대적인 면적은 파장변환기들의 광 변환 효율과 밀접하게 관련되며, 나아가 컬러 필터들(53a, 53b, 53c)의 색 필터링 효율도 관련될 수 있다.Meanwhile, in the present embodiment, the first to third light emitting cells 30a, 30b, and 30c occupy different areas. Further, the wavelength converters 51a, 51b, and 51c disposed on these light emitting cells occupy different areas. The relative area of the light emitting cells is closely related to the light conversion efficiency of the wavelength converters, and furthermore the color filtering efficiency of the color filters 53a, 53b, 53c may also be related.
파장변환기들은 일반적으로 형광체를 포함할 수 있다. 예를 들어, 베타 사이알론(SiAlON)은 녹색광을 방출하기에 적합하며, CASN (CaAlSiN) 계열의 형광체는 적색광을 방출하기에 적합하다.Wavelength converters may generally include phosphors. For example, beta sialon (SiAlON) is suitable for emitting green light, and CASN (CaAlSiN) based phosphor is suitable for emitting red light.
그런데 형광체는 모든 청색광을 녹색광 또는 적색광으로 변환시키지 못하며 각 형광체에 따라 일정한 광 변환 효율이 있다. 특히, 동일 파장의 자외선 또는 청색광을 적색광으로 변환시키는 적색 형광체는 녹색광으로 변환시키는 녹색 형광체에 비해 광 변환 효율이 작다. 더욱이, 적색광은 녹색광에 비해 시감도 또한 낮다. 그러므로, 제1 내지 제3 발광셀들(30a, 30b, 30c)을 동일 면적으로 형성할 경우, 적색광을 구현하는 서브 화소(10R)의 제3 발광셀(30c)은 다른 서브 화소들(10B 또는 10G)과 유사한 세기의 감도를 구현하기 위해 더 높은 전류 밀도하에서 구동되어야 한다. 녹색광을 구현하는 서브 화소(10G)의 제2 발광셀(30b) 또한 제1 발광셀(30a)보다 더 높은 전류 밀도하에서 구동되어야 한다. 즉, 통상적인 이미지 구현을 위해 필요한 전류 밀도가 각 발광셀마다 차이가 있으며, 이에 따라, 제1 내지 제3 발광셀들(30a, 30b, 30c)을 최적의 발광 효율 조건으로 구동할 수 없는 문제가 발생한다.However, the phosphor does not convert all blue light into green light or red light, and has a constant light conversion efficiency depending on each phosphor. Particularly, a red phosphor that converts ultraviolet light or blue light of the same wavelength to red light has a smaller light conversion efficiency than a green phosphor that converts green light. Moreover, the red light has lower visibility than the green light. Therefore, when the first to third light emitting cells 30a, 30b, and 30c are formed to have the same area, the third light emitting cell 30c of the sub pixel 10R, which implements red light, Lt; RTI ID = 0.0 > 10G). ≪ / RTI > The second light emitting cell 30b of the sub pixel 10G that emits green light must also be driven at a higher current density than the first light emitting cell 30a. That is, the current density required for a typical image is different for each light emitting cell, and thus the first to third light emitting cells 30a, 30b, and 30c can not be driven with optimal light emitting efficiency conditions Lt; / RTI >
본 실시에에서는, 제1 내지 제3 발광셀들(30a, 30b, 30c)의 면적을 다르게 하여 발광셀들을 구동하기 위한 전류 밀도를 동일하거나 유사하게 하여 발광셀들을 최적의 발광 효율 조건을 구동할 수 있다.In this embodiment, the first to third light emitting cells 30a, 30b, and 30c are different in area so that the current density for driving the light emitting cells is the same or similar, .
제1 내지 제3 발광셀들(30a, 30b, 30c)의 상대적인 면적은 제1 내지 제3 파장변환기들(51a, 51b, 51c)의 상대적인 광 변환 효율을 고려하여 결정될 수 있다. 파장변환기의 광 변환 효율이 작을수록 대응하는 발광셀의 면적을 크게 한다.The relative area of the first through third light emitting cells 30a, 30b, and 30c may be determined in consideration of the relative photo-conversion efficiency of the first through third wavelength converters 51a, 51b, and 51c. The smaller the light conversion efficiency of the wavelength converter, the larger the area of the corresponding light emitting cell.
예를 들어, 제1 내지 제3 발광셀들(30a, 30b, 30c)이 청색광을 방출하는 경우, 제1 파장변환기(51a)는 생략되며, 제1 발광셀(30a)에 대한 제2 발광셀(30b) 및 제3 발광셀(30c)의 면적비는 각각 제2 파장변환기(51b)의 광 변환 효율 및 제3 파장변환기(51c)의 광 변환 효율에 반비례할 수 있다. 특정 예에서, 제2 파장변환기(51b)가 베타 사이알론을 포함하고, 제3 파장변환기가 CASN을 포함할 경우, 제1 발광셀(30a), 제2 발광셀(30b) 및 제3 발광셀(30c)의 상대적인 면적비는 1:2:7일 수 있다.For example, when the first to third light emitting cells 30a, 30b, and 30c emit blue light, the first wavelength converter 51a is omitted, and the second light emitting cells 30a, The area ratio of the third light emitting cell 30b and the third light emitting cell 30c may be inversely proportional to the light conversion efficiency of the second wavelength converter 51b and the light conversion efficiency of the third wavelength converter 51c. In a specific example, when the second wavelength converter 51b includes beta sialon and the third wavelength converter includes CASN, the first light emitting cell 30a, the second light emitting cell 30b, (30c) may be 1: 2: 7.
또한, 제1 내지 제3 발광셀들(30a, 30b, 30c)이 자외선을 방출하는 경우, 제1 발광셀(30a)에 대한 제2 발광셀(30b) 및 제3 발광셀(30c)의 면적비는 각각 제1 파장변환기(51a)에 대한 상기 제2 파장변환기(51b)의 광 변환 효율비 및 제3 파장변환기(51c)의 광 변환 효율비에 반비례할 수 있다.When the first to third light emitting cells 30a, 30b and 30c emit ultraviolet rays, the area ratio of the second light emitting cell 30b and the third light emitting cell 30c to the first light emitting cell 30a May be inversely proportional to the light conversion efficiency ratio of the second wavelength converter 51b and the light conversion efficiency ratio of the third wavelength converter 51c to the first wavelength converter 51a.
본 실시예에 있어서, 파장변환기들의 광 변환 효율을 고려하여 발광셀들의 면적을 결정하는 것에 대해 설명하지만, 제1 내지 제3 컬러 필터(53a, 53b, 53c)의 필터링 효율이 서로 다를 경우, 이들의 효율 차이 또한 고려하여 발광셀들의 면적을 결정할 수 있다.In the present embodiment, the determination of the area of the light emitting cells in consideration of the light conversion efficiency of the wavelength converters will be described. However, when the filtering efficiencies of the first to third color filters 53a, 53b, and 53c are different from each other, It is possible to determine the area of the light emitting cells.
본 실시예에 따르면, 제1 내지 제3 발광셀들(30a, 30b, 30c)의 면적을 서로 다르게 하여 이들 발광셀들이 동일한 전류 밀도하에서 구동될 수 있다. 따라서, 발광셀들을 구동하는 전류 밀도를 최적 조건으로 설정할 수 있어 발광 효율을 향상시킬 수 있다. According to the present embodiment, the areas of the first to third light emitting cells 30a, 30b, and 30c are different from each other, and these light emitting cells can be driven under the same current density. Therefore, the current density for driving the light emitting cells can be set to the optimal condition, and the luminous efficiency can be improved.
도 11은 본 발명의 또 다른 실시예에 따른 발광 소자(200)를 설명하기 위한 개략적인 평면도이고, 도 12는 도 11의 절취선 B-B를 따라 취해진 개략적인 단면도이다.FIG. 11 is a schematic plan view for explaining a light emitting device 200 according to another embodiment of the present invention, and FIG. 12 is a schematic cross-sectional view taken along a perforated line B-B of FIG.
도 11 및 도 12를 참조하면, 본 실시예에 따른 발광 소자(200)는 도 9 및 도 10를 참조하여 설명한 발광 소자(100)와 대체로 유사하나, 제1 내지 제3 발광셀들(30a, 30b, 30c)이 제1 도전형 반도체층(23)을 공유하는 점에서 차이가 있다. 즉, 제1 발광셀(30a)의 제1 도전형 반도체층(23), 제2 발광셀(30b)의 제1 도전형 반도체층(23) 및 제3 발광셀(30)의 제1 도전형 반도체층(23)이 서로 연속적으로 연결되어 있다.11 and 12, the light emitting device 200 according to the present embodiment is substantially similar to the light emitting device 100 described with reference to FIGS. 9 and 10, except that the first through third light emitting cells 30a, 30b and 30c share the first conductivity type semiconductor layer 23. [ That is, the first conductivity type semiconductor layer 23 of the first light emitting cell 30a, the first conductivity type semiconductor layer 23 of the second light emitting cell 30b, and the first conductivity type semiconductor layer 23 of the third light emitting cell 30, The semiconductor layer 23 is continuously connected to each other.
한편, 제1 패드(33a)는 공유된 제1 도전형 반도체층(23) 상에 형성되며, 따라서, 앞의 실시예와 대비하여 제1 패드(33a)의 개수를 줄일 수 있어 발광 면적을 확보할 수 있다.Meanwhile, the first pad 33a is formed on the shared first conductive semiconductor layer 23, so that the number of the first pads 33a can be reduced compared with the previous embodiment, can do.
나아가, 연장부(33c)가 제1 패드(33a)로부터 연장할 수 있다. 연장부(33c)는 발광셀들 사이의 영역으로 연장할 수 있다. 연장부(33c)는 각 발광셀들을 둘러싸도록 배치될 수 있으나, 도 11에 도시한 바와 같이, 각 발광셀의 일부 가장자리에 배치될 수도 있다. 특히, 제2 패드(33b)가 발광셀의 일 모서리 근처에 배치된 경우, 연장부는 상기 일 모서리로부터 떨어져 있는 가장자리들에 인접하여 배치될 수 있으며, 이에 따라, 전류가 발광셀의 특정 부분에 집중되는 것을 방지하여 광 효율을 개선할 수 있다.Further, the extension portion 33c can extend from the first pad 33a. The extension portion 33c can extend to a region between the light emitting cells. The extended portion 33c may be disposed to surround each light emitting cell, but may be disposed at a part of the edge of each light emitting cell as shown in FIG. In particular, when the second pad 33b is disposed near one edge of the light-emitting cell, the extension can be disposed adjacent to the edges away from the one edge, so that current is concentrated in a specific portion of the light- It is possible to improve the light efficiency.
도 13는 본 발명의 또 다른 실시예에 따른 발광 소자(300)를 설명하기 위한 개략적인 평면도이고, 도 14은 도 13의 절취선 C-C를 따라 취해진 개략적인 단면도이고, 도 15은 도 13의 절취선 D-D를 따라 취해진 개략적인 확대 단면도이다.13 is a schematic plan view for explaining a light emitting device 300 according to another embodiment of the present invention, FIG. 14 is a schematic cross-sectional view taken along a perforated line CC in FIG. 13, and FIG. 15 is a cross- Sectional view taken along line II-II of FIG.
도 13 내지 도 15을 참조하면, 본 실시예에 따른 발광 소자(300)는 각 발광셀들(30a, 30b, 30c)이 수직형 구조를 갖는 점에서 수평형 구조의 발광셀들을 갖는 발광 소자(100 또는 200)와 차이가 있다.13 to 15, the light emitting device 300 according to the present embodiment includes a light emitting device 300 having a light emitting cell having a horizontal structure in that each of the light emitting cells 30a, 30b, and 30c has a vertical structure 100 or 200).
본 실시예에 따른 발광 소자(300)는 지지 기판(121), 제1 발광셀(30a), 제2 발광셀(30b), 제3 발광셀(30c), 반사 방지층(131), 패드들(133b), 제1 파장변환기(51a), 제2 파장변환기(51b), 제3 파장변환기(51c), 제1 컬러 필터(53a), 제2 컬러 필터(53b), 제3 컬러 필터(53c) 및 격벽(55, 또는 격벽), 제1 절연층(35), 제1 전극(39), 제2 전극(36), 제2 절연층(37), 보호 금속층(41) 및 본딩 금속층(45)을 포함할 수 있다. 제1 내지 제3 발광셀들(30a, 30b, 30c)은 각각 제1 도전형 반도체층(23), 활성층(25) 및 제2 도전형 반도체층(27)을 포함한다. 또한, 상기 발광 소자(300)는 서브 화소들(10B, 10G, 10R)을 포함하는데, 서브 화소들(10B, 10G, 10R)은 각각 발광셀(30a, 30b, 30c), 파장변환기(51a, 51b, 51c) 및 컬러 필터(53a, 53b, 53c)를 포함한다.The light emitting device 300 according to the present embodiment includes a support substrate 121, a first light emitting cell 30a, a second light emitting cell 30b, a third light emitting cell 30c, an antireflection layer 131, pads A second wavelength converter 51b, a third wavelength converter 51c, a first color filter 53a, a second color filter 53b, a third color filter 53c, A first insulating layer 35, a first electrode 39, a second electrode 36, a second insulating layer 37, a protective metal layer 41, and a bonding metal layer 45, . ≪ / RTI > The first to third light emitting cells 30a, 30b and 30c include a first conductive semiconductor layer 23, an active layer 25 and a second conductive semiconductor layer 27, respectively. The sub-pixels 10B, 10G and 10R include the light emitting cells 30a, 30b and 30c, the wavelength converters 51a and 51b, 51b, and 51c, and color filters 53a, 53b, and 53c.
지지 기판(121)은 화합물 반도체층들을 성장시키기 위한 성장기판과 구분되며, 이미 성장된 화합물 반도체층들에 부착된 2차 기판이다. 상기 지지기판(51)은 도전성 기판, 예컨대 금속 기판 또는 반도체 기판일 수 있다. 발광셀들(30a, 30b, 30c)을 형성하기 위해 제1 도전형 반도체층(23), 활성층(25) 및 제2 도전형 반도체층(27)이 앞서 설명한 기판(21)과 같은 성장 기판에서 성장되며, 이후 지지 기판(121)이 부착된 후, 성장 기판은 레이저 리프트 오프 또는 케미컬 리프트 오프 등과 같은 박리 기술을 이용하여 제거된다.The support substrate 121 is a secondary substrate separated from a growth substrate for growing compound semiconductor layers and attached to the already grown compound semiconductor layers. The support substrate 51 may be a conductive substrate such as a metal substrate or a semiconductor substrate. The first conductivity type semiconductor layer 23, the active layer 25 and the second conductivity type semiconductor layer 27 are formed on the same growth substrate as the above-described substrate 21 in order to form the light emitting cells 30a, 30b, After the support substrate 121 is then attached, the growth substrate is removed using a stripping technique such as a laser lift-off or a chemical lift-off.
제1 내지 제3 발광셀들(30a, 30b, 30c)은 앞서 설명한 발광셀들과 대체로 유사하나, 제1 도전형 반도체층(23)측으로 광이 방출되도록 배치된다. 또한, 발광셀들(30a, 30b, 30c)은 제2 도전형 반도체층(27) 및 활성층(25)을 관통하여 제1 도전형 반도체층(23)을 노출시키는 관통홀(30h) 또는 그루브를 가질 수 있다.The first to third light emitting cells 30a, 30b, and 30c are substantially similar to the light emitting cells described above, but are arranged to emit light toward the first conductivity type semiconductor layer 23 side. The light emitting cells 30a, 30b and 30c are provided with a through hole 30h or a groove for exposing the first conductivity type semiconductor layer 23 through the second conductivity type semiconductor layer 27 and the active layer 25 Lt; / RTI >
제1 도전형 반도체층(23), 활성층(25) 및 제2 도전형 반도체층(27)은 앞의 실시예에서 설명한 것과 유사하므로, 중복을 피하기 위해 상세한 설명은 생략한다.The first conductive type semiconductor layer 23, the active layer 25, and the second conductive type semiconductor layer 27 are similar to those described in the previous embodiment, so that detailed description is omitted to avoid duplication.
한편, 제1 도전형 반도체층(23)의 표면에 러프니스가 형성될 수 있으며, 반사 방지층(131)이 러프니스를 덮을 수 있다. 반사 방지층(131)은 또한 발광셀들(30a, 30b, 30c)의 측면을 덮을 수도 있다. 러프니스는 광 강화 화학 식각 등의 습식 식각 기술을 이용하여 형성될 수 있으며, 반사 방지층(131)은 원자층 증착 기술을 이용하여 형성될 수 있다. 반사 방지층(131)은 예를 들어, SiO2/Al2O3/SiO2의 층 구조를 가질 수 있으며, 러프니스의 지형을 따라 형성될 수 있다.On the other hand, a roughness may be formed on the surface of the first conductivity type semiconductor layer 23, and the antireflection layer 131 may cover the roughness. The antireflection layer 131 may also cover the side surfaces of the light emitting cells 30a, 30b, and 30c. The roughness may be formed using a wet etching technique such as a light enhanced chemical etching, and the antireflection layer 131 may be formed using an atomic layer deposition technique. The antireflection layer 131 may have a layered structure of SiO2 / Al2O3 / SiO2, for example, and may be formed along the roughness terrain.
도 15에 잘 보이듯이, 제1 절연층(35)이 제1 내지 제3 발광셀들(30a, 30b, 30c)과 지지 기판(121) 사이에 위치한다. 제1 절연층(35)은 또한 관통홀(30h) 내에 노출되는 활성층(25)의 측면 및 제2 도전형 반도체층(27)의 측면을 덮을 수 있다. 한편, 절연층(35)은 제2 도전형 반도체층(27)의 하면을 노출시킨다.15, the first insulating layer 35 is positioned between the first to third light emitting cells 30a, 30b, and 30c and the support substrate 121. As shown in FIG. The first insulating layer 35 may cover the side surfaces of the active layer 25 exposed in the through holes 30h and the side surfaces of the second conductivity type semiconductor layer 27. [ On the other hand, the insulating layer 35 exposes the lower surface of the second conductivity type semiconductor layer 27.
제1 절연층(35)은 실리콘 산화막 또는 실리콘 질화막의 단일층 또는 다중층일 수 있으며, 또는 굴절률이 서로 다른 절연층들을 반복 적층한 분포 브래그 반사기를 포함할 수 있다. 절연층(35)이 분포 브래그 반사기를 포함하는 경우, 절연층(35)은 또한 분포 브래그 반사기와 제2 도전형 반도체층(27) 사이에 계면층을 포함할 수 있다. 상기 절연층(35)은 예컨대 SiO2, MgF2, TiO2 또는 Nb2O5를 포함할 수 있으며, 일 예로, SiO2 또는 MgF2 계면층 상에 TiO2/SiO2 또는 Nb2O5/SiO2가 반복 적층된 분포 브래그 반사기를 포함할 수 있다.The first insulating layer 35 may be a single layer or multiple layers of a silicon oxide film or a silicon nitride film, or may include a distributed Bragg reflector in which insulating layers having different refractive indices are repeatedly laminated. If the insulating layer 35 comprises a distributed Bragg reflector, the insulating layer 35 may also include an interface layer between the distributed Bragg reflector and the second conductive type semiconductor layer 27. The insulating layer 35 is, for example SiO 2, MgF 2, TiO 2 or may include Nb 2 O 5, the one example, SiO 2 or MgF 2 on the interface layer is TiO2 / SiO2 or Nb2O5 / SiO2 repeat laminate And may include a distributed Bragg reflector.
제2 전극(36)은 오믹 반사층(32) 및 장벽 금속층(34)을 포함할 수 있다. 오믹 반사층(32)은 절연층(35)의 개구부들을 통해 노출된 제2 도전형 반도체층(27)에 오믹 콘택한다. 오믹 반사층(32)은 절연층(35)과 접할 수 있으나, 도시한 바와 같이 오믹 반사층(32)의 가장자리가 절연층(35)으로부터 이격될 수 있다. 오믹 반사층(32)은 예컨대 Ag와 같은 반사층을 포함할 수 있으며, Ni 등의 오믹 콘택을 위한 금속층을 포함할 수 있다. 오믹 반사층(32)은 제2 도전형 반도체층(27)의 하부 영역 내에 한정되어 위치한다.The second electrode 36 may include an ohmic reflective layer 32 and a barrier metal layer 34. The ohmic reflective layer 32 ohmically contacts the second conductive semiconductor layer 27 exposed through the openings of the insulating layer 35. The ohmic reflective layer 32 may be in contact with the insulating layer 35, but the edge of the ohmic reflective layer 32 may be spaced from the insulating layer 35 as shown in the figure. The ohmic reflective layer 32 may include a reflective layer, such as Ag, and may include a metal layer for ohmic contact, such as Ni. The ohmic reflective layer 32 is located within the lower region of the second conductivity type semiconductor layer 27.
한편, 방벽 금속층(34)은 오믹 반사층(32)과 지지기판(51) 사이에 위치하며, 오믹 반사층(32)을 덮는다. 장벽 금속층(34)은 오믹 반사층(32)의 금속 물질, 예컨대 Ag의 이동을 방지한다. 장벽 금속층(34)은 오믹 반사층(32)의 측면을 덮을 수도 있으나, 도 15에 도시되듯이, 오믹 반사층(32)의 측면이 노출되도록 장벽 금속층(34)이 오믹 반사층(32) 상에 배치될 수도 있다. 오믹 반사층(32)의 측면을 노출시킴으로써 오믹 반사층(32)을 상대적으로 넓은 영역에 형성할 수 있으며, 따라서 접촉 저항을 줄여 순방향 전압을 낮출 수 있다. 장벽 금속층(35)은 예컨대, Pt, Ni, Ti, W, Au 또는 이들의 합금을 포함할 수 있다.On the other hand, the barrier metal layer 34 is located between the ohmic reflective layer 32 and the support substrate 51 and covers the ohmic reflective layer 32. The barrier metal layer 34 prevents migration of a metal material, such as Ag, of the ohmic reflective layer 32. The barrier metal layer 34 may cover the side surface of the OMR reflective layer 32 but the barrier metal layer 34 may be disposed on the OMR reflective layer 32 such that the side surface of the OMR reflective layer 32 is exposed, It is possible. By exposing the side surface of the OMR reflective layer 32, the OMR reflective layer 32 can be formed in a relatively large area, thereby reducing the contact resistance and lowering the forward voltage. The barrier metal layer 35 may comprise, for example, Pt, Ni, Ti, W, Au, or an alloy thereof.
한편, 장벽 금속층(34)은 또한 발광셀들(30a, 30b, 30c)의 함입부 내측에서 절연층(35)을 덮을 수 있으며, 함입부에 형성되는 패드(33b)에 전기적으로 접속될 수 있다. The barrier metal layer 34 may also cover the insulating layer 35 inside the embedded portions of the light emitting cells 30a, 30b and 30c and may be electrically connected to the pad 33b formed in the embedded portion .
제2 절연층(37)은 장벽 금속층(34) 아래에서 장벽 금속층(34)을 덮는다. 제2 절연층(37)은 장벽 금속층(34)의 하면 전체를 덮을 수 있다. 나아가, 제2 절연층(37)은 장벽 금속층(34)의 측면이 외부에 노출되는 것을 방지하도록 장벽 금속층(34)의 측면을 덮을 수 있다.The second insulating layer 37 covers the barrier metal layer 34 under the barrier metal layer 34. The second insulating layer 37 may cover the entire bottom surface of the barrier metal layer 34. Further, the second insulating layer 37 may cover the side surface of the barrier metal layer 34 to prevent the side surface of the barrier metal layer 34 from being exposed to the outside.
제2 절연층(37)은 실리콘 산화막 또는 실리콘 질화막의 단일층 또는 다중층일 수 있으며, 또는 굴절률이 서로 다른 절연층들, 예컨대 SiO2/TiO2 또는 SiO2/Nb2O5를 반복 적층한 분포 브래그 반사기를 포함할 수 있다. 상기 제2 절연층(37)이 분포 브래그 반사기를 포함하는 경우, 상기 제2 절연층(37)은 또한 분포 브래그 반사기와 제1 절연층(31) 사이에 계면층을 포함할 수 있다. 상기 제1 절연층(37)은 예컨대 SiO2, MgF2, TiO2 또는 Nb2O5를 포함할 수 있으며, 일 예로, SiO2 또는 MgF2 계면층 상에 TiO2/SiO2 또는 Nb2O5/SiO2가 반복 적층된 분포 브래그 반사기를 포함할 수 있다.The second insulating layer 37 may be a single layer or a multilayer of a silicon oxide film or a silicon nitride film or may include a distributed Bragg reflector in which insulating layers having different refractive indices such as SiO2 / TiO2 or SiO2 / Nb2O5 are repeatedly laminated have. If the second insulating layer 37 comprises a distributed Bragg reflector, the second insulating layer 37 may also include an interface layer between the distributed Bragg reflector and the first insulating layer 31. The first insulating layer 37 may include, for example, SiO 2 , MgF 2 , TiO 2, or Nb 2 O 5. For example, TiO 2 / SiO 2 or Nb 2 O 5 / SiO 2 may be repeatedly formed on the SiO 2 or MgF 2 interface layer Stacked distributed Bragg reflectors.
한편, 제1 전극(39)은 제2 절연층(37)과 지지기판(51) 사이에 위치하며, 제1 절연층(35) 및 제2 절연층(37)을 통해 제1 도전형 반도체층(23)에 전기적으로 접속한다. 제1 전극(39)은 제2 전극(34)과 지지기판(51) 사이에 배치되며, 제1 전극(39)은 관통홀(30h)을 통해 노출된 제1 도전형 반도체층(23)에 접속할 수 있다. 나아가, 제1 전극(39)은 제1 절연층(35) 및 제2 절연층(37)에 의해 활성층(25) 및 제2 도전형 반도체층(27)으로부터 절연된다.The first electrode 39 is located between the second insulating layer 37 and the supporting substrate 51 and is electrically connected to the first conductive semiconductor layer 31 through the first insulating layer 35 and the second insulating layer 37. [ (23). The first electrode 39 is disposed between the second electrode 34 and the supporting substrate 51 and the first electrode 39 is formed on the first conductive semiconductor layer 23 exposed through the through hole 30h Can be connected. Further, the first electrode 39 is insulated from the active layer 25 and the second conductivity type semiconductor layer 27 by the first insulating layer 35 and the second insulating layer 37.
제1 전극(39)은 제1 도전형 반도체층(23)에 오믹 콘택하는 오믹층을 포함할 수 있으며, 또한, 반사 금속층을 포함할 수 있다. 예를 들어, 제1 전극(39)은 Cr/Au을 포함할 수 있으며, 나아가, Ti/Ni을 더 포함할 수 있다.The first electrode 39 may include an ohmic layer that makes an ohmic contact with the first conductive semiconductor layer 23, and may include a reflective metal layer. For example, the first electrode 39 may include Cr / Au, and may further include Ti / Ni.
한편, 보호 금속층(41)이 제1 전극(39) 하면을 덮을 수 있다. 보호 금속층(41)은 본딩 금속층(45)으로부터 Sn 등의 금속 물질이 확산되는 것을 방지하여 제1 전극(39)을 보호한다. 보호 금속층(41)은 예를 들어, Au를 포함할 수 있으며, Ti 및 Ni을 더 포함할 수 있다. 보호 금속층(41)은 예를 들어, Ti/Ni을 복수회 반복 적층한 후, Au를 적층하여 형성될 수 있다.On the other hand, the protective metal layer 41 may cover the bottom surface of the first electrode 39. The protective metal layer 41 protects the first electrode 39 by preventing diffusion of a metallic material such as Sn from the bonding metal layer 45. The protective metal layer 41 may include Au, for example, and may further include Ti and Ni. The protective metal layer 41 can be formed, for example, by repeatedly laminating Ti / Ni a plurality of times and then stacking Au.
한편, 지지기판(121)은 보호 금속층(41) 상에 본딩 금속층(45)을 통해 본딩될 수 있다. 본딩 금속층(45)은 예컨대 AuSn 또는 NiSn을 이용하여 형성될 수 있다. 이와 달리, 지지기판(121)은 예컨대 도금 기술을 사용하여 보호 금속층(41) 상에 형성될 수도 있다. 상기 지지기판(121)이 도전성 기판인 경우, 패드의 기능을 수행할 수 있다. 이에 따라, 제1 내지 제3 발광셀들(30a, 30b, 30c)의 제1 도전형 반도체층들(23)이 서로 전기적으로 연결되며, 지지기판(121)이 공통 전극으로 사용된다.On the other hand, the support substrate 121 may be bonded onto the protective metal layer 41 through the bonding metal layer 45. The bonding metal layer 45 may be formed using AuSn or NiSn, for example. Alternatively, the support substrate 121 may be formed on the protective metal layer 41 using, for example, a plating technique. When the support substrate 121 is a conductive substrate, it may function as a pad. Accordingly, the first conductivity type semiconductor layers 23 of the first to third light emitting cells 30a, 30b, and 30c are electrically connected to each other, and the support substrate 121 is used as a common electrode.
한편, 각 발광셀들(30a, 30b, 30c)은 하나의 모서리 부분에 제1 도전형 반도체층(23), 활성층(25) 및 제2 도전형 반도체층(27)이 제거된 함입부를 가질 수 있으며, 패드들(133b)이 각각 이 함입부 내에 배치되어 장벽 금속층(34)에 전기적으로 접속될 수 있다.Each of the light emitting cells 30a, 30b and 30c may have a depressed portion in which a first conductivity type semiconductor layer 23, an active layer 25 and a second conductivity type semiconductor layer 27 are removed at one corner portion And pads 133b may be disposed within the recesses and electrically connected to the barrier metal layer 34, respectively.
제1 내지 제3 파장변환기들(51a, 51b, 51c) 및 제1 내지 제3 컬러 필터(53a, 53b, 53)가 각각 제1 내지 제3 발광셀들(30a, 30b, 30c) 상에 배치되어 서브 화소들(10B, 10G, 10R)을 구성한다.The first to third wavelength converters 51a to 51c and the first to third color filters 53a to 53b are disposed on the first to third light emitting cells 30a to 30c Thereby forming sub-pixels 10B, 10G and 10R.
제1 내지 제3 파장변환기들(51a, 51b, 51c) 및 제1 내지 제3 컬러 필터(53a, 53b, 53)에 대해서는 앞서 도 9 및 도 10를 참조하여 설명한 것과 유사하므로 중복을 피하기 위해 상세한 설명은 생략한다. 다만, 앞의 실시예들에서 파장변환기들(51a, 51b, 51c)이 제2 도전형 반도체층(27) 측에 배치되나, 본 실시예에서 발광셀들(30a, 30b, 30c)이 수직형 구조를 가지므로, 제1 내지 제3 파장변환기들(51a, 51b, 51c) 및 제1 내지 제3 컬러 필터(53a, 53b, 53)는 제1 도전형 반도체층(23) 측에 배치된다.The first to third wavelength converters 51a, 51b, and 51c and the first to third color filters 53a, 53b, and 53 are similar to those described above with reference to FIGS. 9 and 10, The description is omitted. Although the wavelength converters 51a, 51b and 51c are disposed on the side of the second conductivity type semiconductor layer 27 in the above embodiments, the light emitting cells 30a, 30b and 30c are formed in the vertical type The first to third wavelength converters 51a to 51c and the first to third color filters 53a to 53b are disposed on the first conductivity type semiconductor layer 23 side.
격벽(55)이 발광셀들(30a, 30b, 30c) 사이의 영역에 배치되며, 또한, 발광셀들을 둘러쌀 수 있다. 격벽(55)은 또한 패드(133b)의 측면을 둘러쌀 수도 있다. 격벽(55)은 앞서 설명한 바와 같이 광 반사 기능을 갖는 백색 수지 또는 감광성 솔더 레지스트일 수 있다.The barrier ribs 55 are disposed in the region between the light emitting cells 30a, 30b, and 30c, and may surround the light emitting cells. The partition 55 may also surround the side of the pad 133b. The barrier rib 55 may be a white resin or a photosensitive solder resist having a light reflecting function as described above.
또한, 본 실시예에 있어서, 제1 발광셀 내지 제3 발광셀(30a, 30b, 30c)은 서로 다른 면적을 점유하며, 이에 대해서는 도 9 및 도 10를 참조하여 설명한 바와 유사하므로 상세한 설명을 생략한다.In this embodiment, the first to third light emitting cells 30a, 30b, and 30c occupy different areas, which are similar to those described with reference to FIGS. 9 and 10, do.
도 16은 본 발명의 또 다른 실시예에 따른 발광 소자(400)를 설명하기 위한 개략적인 평면도이고, 도 17는 도 16의 절취선 E-E를 따라 취해진 개략적인 단면도이다. 본 실시예에 따른 발광 소자(400)는 플립형 구조를 가지는 점에서 앞의 실시예들의 발광 소자와 차이가 있다. FIG. 16 is a schematic plan view for explaining a light emitting device 400 according to another embodiment of the present invention, and FIG. 17 is a schematic sectional view taken along a perforated line E-E in FIG. The light emitting device 400 according to the present embodiment differs from the light emitting device of the previous embodiments in that it has a flip structure.
도 16 및 도 17를 참조하면, 본 실시예에 따른 발광 소자(400)는 기판(21), 제1 내지 제3 발광셀, 오믹 반사층(231), 제1 절연층(233), 패드전극들(235a, 235b), 제2 절연층(237), 제1 파장변환기(51a), 제2 파장변환기(51b), 제3 파장변환기(51c), 제1 컬러 필터(53a), 제2 컬러 필터(53b), 제3 컬러 필터(53c) 및 격벽(55, 또는 격벽)을 포함할 수 있다. 제1 내지 제3 발광셀들(30a, 30b, 30c)은 각각 제1 도전형 반도체층(23), 활성층(25) 및 제2 도전형 반도체층(27)을 포함한다. 또한, 상기 발광 소자(400)는 서브 화소들(10B, 10G, 10R)을 포함하는데, 서브 화소들(10B, 10G, 10R)은 각각 발광셀(30), 파장변환기(51a, 51b, 51c) 및 컬러 필터(53a, 53b, 53c)를 포함한다.16 and 17, the light emitting device 400 according to the present embodiment includes a substrate 21, first to third light emitting cells, an ohmic reflective layer 231, a first insulating layer 233, The first wavelength converter 51a, the second wavelength converter 51b, the third wavelength converter 51c, the first color filter 53a, the second color filter 53a, A second color filter 53b, a third color filter 53c, and a partition 55 (or partition). The first to third light emitting cells 30a, 30b and 30c include a first conductive semiconductor layer 23, an active layer 25 and a second conductive semiconductor layer 27, respectively. The light emitting device 400 includes the sub pixels 10B, 10G and 10R and the sub pixels 10B, 10G and 10R are connected to the light emitting cells 30, the wavelength converters 51a, 51b and 51c, And color filters 53a, 53b, and 53c.
기판(21)은 도 9 및 도 10를 참조하여 설명한 바와 같으므로 상세한 설명은 생략한다. 제1 도전형 반도체층(23), 활성층(25) 및 제2 도전형 반도체층(27)에 대해서도 앞의 실시예들과 유사하므로 상세한 설명은 생략한다.Since the substrate 21 is as described with reference to FIGS. 9 and 10, detailed description is omitted. The first conductivity type semiconductor layer 23, the active layer 25, and the second conductivity type semiconductor layer 27 are similar to those of the above-described embodiments, and a detailed description thereof will be omitted.
발광셀들은 기판(21) 하부에 배치되며, 발광셀들은 제2 도전형 반도체층(27) 및 활성층(25)을 통해 제1 도전형 반도체층(23)을 노출시킨다. 이들 발광셀들의 면적 및 적층 구조는 앞의 실시예들에 설명한 제1 내지 제3 발광셀들(30a, 30b, 30c)과 유사하므로 상세한 설명은 생략한다.The light emitting cells are disposed under the substrate 21 and the light emitting cells expose the first conductivity type semiconductor layer 23 through the second conductivity type semiconductor layer 27 and the active layer 25. The area and stacking structure of the light emitting cells are similar to those of the first to third light emitting cells 30a, 30b, and 30c described in the previous embodiments, and thus their detailed description is omitted.
오믹 반사층(231)은 각 발광셀의 제2 도전형 반도체층(27)에 오믹 콘택한다. 오믹 반사층(231)은 오믹층과 반사층을 포함할 수 있으며, 예를 들어, Ni이나 ITO와 같은 오믹층 및 Ag나 Al과 같은 반사층을 포함할 수 있다. 오믹 반사층(231)은 또한 ITO와 같은 투명 산화물층과 반사층 사이에 SiO2와 같은 절연층을 포함할 수 있으며, 반사층은 절연층을 통해 투명 산화물층에 접속할 수 있다.The ohmic reflective layer 231 is in ohmic contact with the second conductivity type semiconductor layer 27 of each light emitting cell. The ohmic reflective layer 231 may include an ohmic layer and a reflective layer, for example, an ohmic layer such as Ni or ITO, and a reflective layer such as Ag or Al. The ohmic reflective layer 231 may also include an insulating layer such as SiO2 between the transparent oxide layer such as ITO and the reflective layer, and the reflective layer may be connected to the transparent oxide layer through the insulating layer.
제1 절연층(233)은 발광셀들을 덮으며, 노출된 제2 도전형 반도체층(27) 및 활성층(25)의 측면을 덮는다. 제1 절연층(233)은 제1 도전형 반도체층(23) 및 오믹 반사층(231)을 노출시키는 개구부들을 가진다. 제1 절연층(233)은 SiO2나 Si3N4와 같은 단일층으로 형성될 수 있으나, 이에 한정되는 것은 아니며, 다중층으로 형성될 수도 있다. 특히, 제1 절연층(233)은 분포 브래그 반사기를 포함할 수도 있다.The first insulating layer 233 covers the light emitting cells and covers the side surfaces of the exposed second conductive semiconductor layer 27 and the active layer 25. The first insulating layer 233 has openings for exposing the first conductive semiconductor layer 23 and the ohmic reflective layer 231. The first insulating layer 233 may be formed of a single layer such as SiO 2 or Si 3 N 4, but is not limited thereto, and may be formed of multiple layers. In particular, the first insulating layer 233 may comprise a distributed Bragg reflector.
제1 패드 전극(235a) 및 제2 패드 전극(235b)이 제1 절연층(233) 상에 배치된다. 제1 패드 전극(235a) 및 제2 패드 전극(235b)은 각 발광셀 상에 배치되며, 제1 패드 전극(235a)은 제1 도전형 반도체층(23)에 전기적으로 접속하고, 제2 패드 전극(235b)은 오믹 반사층(231)에 전기적으로 접속한다. 제1 패드 전극(235a) 및 제2 패드 전극(235b)은 동일 공정으로 함께 형성될 수 있으며, 따라서 동일 레벨에 위치할 수 있다. 특정 실시예에서, 제2 패드 전극(235b)은 생략될 수도 있다.A first pad electrode 235a and a second pad electrode 235b are disposed on the first insulating layer 233. The first pad electrode 235a and the second pad electrode 235b are disposed on each light emitting cell and the first pad electrode 235a is electrically connected to the first conductivity type semiconductor layer 23, The electrode 235b is electrically connected to the ohmic reflective layer 231. The first pad electrode 235a and the second pad electrode 235b may be formed together in the same process and therefore may be located at the same level. In certain embodiments, the second pad electrode 235b may be omitted.
제2 절연층(237)은 제1 및 제2 패드 전극들(235a, 235b)을 덮되, 이들을 노출시키는 개구부들을 가진다. 제2 절연층(237)은 SiO2나 Si3N4와 같은 단일층으로 형성될 수 있으나, 이에 한정되는 것은 아니며, 다중층으로 형성될 수도 있다. 특히, 제1 절연층(233)은 분포 브래그 반사기를 포함할 수도 있다.The second insulating layer 237 covers the first and second pad electrodes 235a and 235b and has openings for exposing the first and second pad electrodes 235a and 235b. The second insulating layer 237 may be formed of a single layer such as SiO2 or Si3N4, but is not limited thereto and may be formed of multiple layers. In particular, the first insulating layer 233 may comprise a distributed Bragg reflector.
한편, 제1 및 제2 범프 패드들(243a, 243b)이 각 발광셀 상에 형성되며, 제2 절연층(237)의 개구부들을 통해 제1 및 제2 패드전극들(235a, 235b)에 접속된다. 구체적으로, 제1 범프 패드(243a)는 제1 패드전극(235a)에 접속하며, 제2 범프 패드(243b)는 제2 패드 전극(235b)에 접속한다. The first and second bump pads 243a and 243b are formed on the respective light emitting cells and connected to the first and second pad electrodes 235a and 235b through openings of the second insulating layer 237 do. Specifically, the first bump pad 243a is connected to the first pad electrode 235a, and the second bump pad 243b is connected to the second pad electrode 235b.
범프 패드들(243a, 243b)은 앞서 설명한 실시예들의 패드들에 비해 상대적으로 넓은 면적을 차지하는데, 범프 패드들(243a, 243b)의 최대 폭은 적어도 발광셀의 최소 폭의 1/2을 초과할 수 있다. 범프 패드들(243a, 243b)은 도시한 바와 같이 직사각형 형상을 가질 수 있으나, 이에 한정되는 것은 아니며 원형 또는 타원형 형상을 가질 수도 있다. 범프 패드들(243a, 243b)은 Au 또는 AuSn을 포함할 수 있다. The bump pads 243a and 243b occupy a relatively large area compared to the pads of the above-described embodiments, and the maximum width of the bump pads 243a and 243b exceeds at least 1/2 of the minimum width of the light emitting cells can do. The bump pads 243a and 243b may have a rectangular shape as shown, but not limited thereto, and may have a circular or elliptical shape. The bump pads 243a and 243b may include Au or AuSn.
한편, 범프 패드들(243a, 243b) 이외에 더미 범프 패드(243c)가 적어도 하나의 발광셀 상에 배치될 수 있다. 특히, 발광셀들은 서로 다른 면적을 가지므로, 상대적으로 넓은 면적을 가지는 발광셀들에 더미 범프 패드(243c)가 배치될 수 있다. 더미 범프 패드(243c)는 발광셀들에서 생성된 열을 방출하기 위한 방열 통로로 이용될 수 있어 발광 소자의 광 효율을 향상시킬 수 있다.On the other hand, in addition to the bump pads 243a and 243b, a dummy bump pad 243c may be disposed on at least one light emitting cell. In particular, since the light emitting cells have different areas, the dummy bump pads 243c can be disposed in the light emitting cells having a relatively large area. The dummy bump pad 243c can be used as a heat dissipation path for emitting heat generated in the light emitting cells, thereby improving the light efficiency of the light emitting device.
지지 부재(245)가 범프 패드들(243a, 243b)의 측면을 덮을 수 있다. 지지 부재(245)는 또한 더미 범프 패드(243c)의 측면을 덮을 수도 있다. 지지 부재(245)는 열경화성 또는 열가소성 수지로 형성될 수 있다.The support member 245 may cover the side surfaces of the bump pads 243a and 243b. The support member 245 may also cover the side surface of the dummy bump pad 243c. The support member 245 may be formed of a thermosetting or thermoplastic resin.
한편, 제1 내지 제3 파장변환기들(51a, 51b, 51c)은 발광셀들에 대향하여 기판(21) 상에 배치된다. 제1 내지 제3 파장변환기들(51a, 51b, 51c)은 대응하는 발광셀들 상에 배치된다. 또한, 제1 내지 제3 컬러 필터(53a, 53b, 53c)가 각각 제1 내지 제3 파장변환기들(51a, 51b, 51c) 상에 배치된다. 제1 내지 제3 파장변환기들(51a, 51b, 51c) 및 제1 내지 제3 컬러 필터(53a, 53b, 53c)는 앞서 설명한 것과 유사하므로 상세한 설명은 생략한다.On the other hand, the first to third wavelength converters 51a, 51b and 51c are arranged on the substrate 21 in opposition to the light emitting cells. The first to third wavelength converters 51a, 51b and 51c are disposed on the corresponding light emitting cells. Further, the first to third color filters 53a, 53b, and 53c are disposed on the first to third wavelength converters 51a, 51b, and 51c, respectively. Since the first to third wavelength converters 51a, 51b, and 51c and the first to third color filters 53a, 53b, and 53c are similar to those described above, a detailed description thereof will be omitted.
한편, 격벽(55)이 파장변환기들(51a, 51b, 51c) 사이에 위치할 수 있다. 격벽(55)은 백색 수지 또는 감광성 솔더 레지스트로 형성될 수 있다. 앞의 실시예들에 있어서, 격벽(55)이 발광셀들(30a, 30b, 30c) 사이에 배치되는 것을 설명하였으나, 본 실시예에 있어서, 격벽(55)은 기판(21) 상부에 배치되므로, 발광셀들 사이의 영역은 격벽(55)이 형성되지 않는다. 대신에, 제1 절연층(233)이 분포 브래그 반사기를 포함하거나, 제1 패드 전극(235a) 및/또는 제2 패드 전극(235b)이 발광셀들의 측벽을 덮도록 배치됨으로써, 발광셀들 사이의 광 간섭을 방지할 수 있다.On the other hand, the barrier ribs 55 may be positioned between the wavelength converters 51a, 51b, and 51c. The barrier ribs 55 may be formed of a white resin or a photosensitive solder resist. Although the barrier ribs 55 are disposed between the light emitting cells 30a, 30b and 30c in the above embodiments, the barrier ribs 55 are disposed on the substrate 21 in this embodiment , No barrier ribs 55 are formed in the region between the light emitting cells. Alternatively, the first insulating layer 233 may include a distributed Bragg reflector, or the first pad electrode 235a and / or the second pad electrode 235b may be disposed so as to cover the sidewalls of the light emitting cells, It is possible to prevent the optical interference of the light-
본 실시예에 따르면, 플립형 구조의 발광셀들을 이용함으로써 각 발광셀들의 발광 효율을 개선할 수 있다. 또한, 본 실시예에 있어서도, 발광셀들은 서로 다른 면적을 가지며, 앞서 설명한 바와 같이 발광셀들의 면적이 파장변환기의 광 변환 효율을 고려하여 결정된다.According to the present embodiment, by using the light emitting cells of the flip structure, the light emitting efficiency of each light emitting cell can be improved. Also in this embodiment, the light emitting cells have different areas, and the area of the light emitting cells is determined in consideration of the light conversion efficiency of the wavelength converter as described above.
도 18은 본 발명의 또 다른 실시예에 따른 발광 소자(500)를 설명하기 위한 개략적인 단면도이다.18 is a schematic cross-sectional view for explaining a light emitting device 500 according to another embodiment of the present invention.
도 18을 참조하면, 본 실시예에 따른 발광 소자(500)는 도 16 및 도 17를 참조하여 설명한 발광 소자와 대체로 유사하나, 기판(21)이 생략된 것에 차이가 있다. 제1 내지 제3 파장변환기들(51a, 51b, 51c)은 기판(21) 상에 배치되는 대신 발광셀들 상에 배치된다. 또한, 도 13 내지 도 15을 참조하여 설명한 바와 같이, 제1 도전형 반도체층(23)의 표면에 러프니스가 형성될 수 있으며, 반사 방지층이 제1 도전형 반도체층(23)의 표면을 덮을 수 있다.Referring to FIG. 18, the light emitting device 500 according to the present embodiment is substantially similar to the light emitting device described with reference to FIGS. 16 and 17, except that the substrate 21 is omitted. The first to third wavelength converters 51a, 51b and 51c are disposed on the light emitting cells instead of being disposed on the substrate 21. [ 13 to 15, a roughness may be formed on the surface of the first conductivity type semiconductor layer 23, and an antireflection layer may be formed on the surface of the first conductivity type semiconductor layer 23 .
본 실시예에 있어서, 발광셀들은 지지 부재(245)에 의해 지지될 수 있다.In this embodiment, the light emitting cells can be supported by the support member 245. [
본 실시예에 따르면, 기판(21)을 제거함으로써, 인접한 서브 화소들(10B, 10G, 10R) 사이의 광 간섭을 차단할 수 있다.According to this embodiment, by removing the substrate 21, optical interference between adjacent sub-pixels 10B, 10G, and 10R can be blocked.
도 19a 및 도 19b는 파장변환기를 포함하는 필름을 설명하기 위한 단면도들이다.19A and 19B are sectional views for explaining a film including a wavelength converter.
우선 도 19a를 참조하면, 앞의 실시예들에 있어서, 제1 내지 제3 파장변환기들(51a, 51b, 51c)은 서로 이격되어 개별적으로 발광셀들(30a, 30b, 30c) 상에 부착 또는 형성되나, 본 실시예에 있어서, 제1 내지 제3 파장변환기들(51a, 51b, 51c)는 하나의 필름 내에서 하나의 층 내에 배열되어 있다. 파장변환기들(51a 51b, 51c) 사이의 영역에는 투명 또는 불투명 수지(151)가 배치될 수 있다.19A, the first to third wavelength converters 51a, 51b, and 51c are separated from each other and attached to the light emitting cells 30a, 30b, and 30c, respectively, However, in this embodiment, the first to third wavelength converters 51a, 51b and 51c are arranged in one layer in one film. Transparent or opaque resin 151 may be disposed in the region between the wavelength converters 51a 51b and 51c.
본 실시예에 있어서, 발광셀들이 청색광을 방출하는 경우, 제1 파장변환기(51a)는 생략될 수도 있으며, 이 경우, 제1 파장변환기(51a)의 위치에는 투명 수지(151)가 위치할 수 있다.In this embodiment, when the light emitting cells emit blue light, the first wavelength converter 51a may be omitted. In this case, the transparent resin 151 may be located at the position of the first wavelength converter 51a have.
도 19b를 참조하면, 본 실시예에 따른 필름은 여러 층의 적층 필름으로, 예컨대, 제1 층(151a)은 제1 파장변환기(51a)를 포함하고, 제2 층(151b)는 제2 파장변환기(51b)를 포함하며, 제3 층(151c)은 제3 파장변환기(51c)를 포함할 수 있다. 제1 내지 제3층은 각각 투명 수지(151)와 파장변환기의 조합으로 구성될 수 있다. 한편, 발광셀들이 청색광을 방출하는 경우, 제1층(151a)은 생략될 수 있다.19B, the film according to the present embodiment is a laminated film of several layers, for example, the first layer 151a includes a first wavelength converter 51a, and the second layer 151b includes a second wavelength Converter 51b, and the third layer 151c may include a third wavelength converter 51c. Each of the first to third layers may be composed of a combination of a transparent resin 151 and a wavelength converter. On the other hand, when the light emitting cells emit blue light, the first layer 151a may be omitted.
본 실시예에 있어서, 몇몇 예들을 설명하지만, 이외에도 다양한 구조의 필름이 사용될 수 있다. In the present embodiment, although a few examples are described, a variety of other structures may be used.
도 20는 본 발명의 일 실시예에 따른 표시 장치를 설명하기 위한 개략적인 평면도이다.20 is a schematic plan view for explaining a display device according to an embodiment of the present invention.
도 20를 참조하면, 본 실시예에 따른 표시 장치는 회로기판(150)와 상기 회로기판(150) 상에 배열된 발광 소자(100)를 포함한다.Referring to FIG. 20, a display device according to the present embodiment includes a circuit board 150 and a light emitting device 100 arranged on the circuit board 150.
발광 소자(100)는 도 9 및 도 10를 참조하여 설명한 발광 소자로 제1 내지 제3 서브 화소들(10B, 10G, 10R)을 포함하며, 패드들(33a, 33b)을 포함한다.The light emitting device 100 includes the first to third sub pixels 10B, 10G, and 10R as the light emitting device described with reference to FIGS. 9 and 10, and includes pads 33a and 33b.
회로기판(150)는 화소(100) 상의 패드들(33a, 33b)에 전류를 공급하기 위한 회로 배선을 가지며, 패드들(33a, 33b)는 회로기판(150) 상의 회로에 전기적으로 접속된다. 예를 들어, 패드들(33a, 33b)은 본딩 와이어를 이용하여 회로기판(150)에 전기적으로 연결될 수 있다. Circuit board 150 has circuit wiring for supplying current to pads 33a and 33b on pixel 100 and pads 33a and 33b are electrically connected to circuitry on circuit board 150. [ For example, the pads 33a and 33b may be electrically connected to the circuit board 150 using bonding wires.
본 실시예에 있어서, 화소(100)는 3개의 서브 화소를 포함하며, 이들 서브 화소는 각각 청색광, 녹색광 및 적색광을 구현할 수 있다. 따라서, 각각의 화소(100)가 하나의 화소를 구성하며, 이들 발광 소자(100)를 이용하여 이미지를 구현할 수 있다.In this embodiment, the pixel 100 includes three sub-pixels, which can implement blue light, green light and red light, respectively. Therefore, each pixel 100 constitutes one pixel, and an image can be implemented using these light emitting elements 100. [
본 실시예에 있어서, 화소(100)가 회로기판(150) 상에 배열된 것으로 설명하지만, 발광 소자들(200, 300, 400 또는 500)이 배열될 수도 있으며, 다양한 발광 소자들이 혼합 사용될 수도 있다.Although the pixel 100 is described as being arranged on the circuit board 150 in the present embodiment, the light emitting elements 200, 300, 400, or 500 may be arranged, and various light emitting elements may be used in combination .
또한, 발광셀들의 구조에 대응하여 본딩 와이어 이외에 Au-Au 본딩이나 AuSN 본딩을 이용하여 발광 소자를 회로기판에 실장할 수도 있다.In addition, the light emitting device may be mounted on the circuit board using Au-Au bonding or AuSN bonding in addition to the bonding wire corresponding to the structure of the light emitting cells.
도 21은 본 발명의 일 실시예에 따른 표시 장치를 도시한 사시도이다.21 is a perspective view showing a display device according to an embodiment of the present invention.
도 21에 따르면, 본 발명에 따른 표시 장치(1000)는 복수 개의 모듈(DM)을 포함할 수 있다. 각각의 모듈(DM)은 서브 표시 장치(100') 및 지지체(200)를 포함할 수 있다. 서브 표시 장치(100')에는 복수 개의 화소가 제공되는데, 화소는 앞서 서술한 바와 같이 복수 개의 발광 다이오드를 포함한다. 각 발광 다이오드 내에는 적색광을 출사하는 적색 발광셀, 청색광을 출사하는 청색 발광셀, 녹색광을 출사하는 녹색 발광셀이 하나의 화소에 제공될 수 있다. 서브 표시 장치(100')에는 이러한 발광 다이오드가 복수 개 제공되는데, 복수 개의 화소는 동일한 지지체(200)에 의해 지지될 수 있다.Referring to FIG. 21, the display device 1000 according to the present invention may include a plurality of modules DM. Each module DM may include a sub-display 100 'and a support 200. The sub-display device 100 'is provided with a plurality of pixels, which include a plurality of light-emitting diodes as described above. In each light emitting diode, one pixel may be provided with a red light emitting cell for emitting red light, a blue light emitting cell for emitting blue light, and a green light emitting cell for emitting green light. In the sub display device 100 ', a plurality of such light emitting diodes are provided, and a plurality of pixels can be supported by the same support 200.
표시 장치(1000)에는 복수 개의 모듈(DM)이 제공되는 바, 표시 장치(1000) 대형화가 가능하다.The display device 1000 is provided with a plurality of modules DM, and thus the display device 1000 can be enlarged.
이상에서, 본 발명의 다양한 실시예들에 대해 설명하였으나, 본 발명은 이들 실시예들에 한정되는 것은 아니다. 또한, 하나의 실시예에 대해서 설명한 사항이나 구성요소는 본 발명의 기술적 사상을 벗어나지 않는 한, 다른 실시예에도 적용될 수 있다.While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. In addition, the elements or components described in relation to one embodiment can be applied to other embodiments without departing from the technical idea of the present invention.

Claims (25)

  1. 각각 제1 도전형 반도체층, 활성층 및 제2 도전형 반도체층을 포함하는 제1 발광셀, 제2 발광셀 및 제3 발광셀;A first light emitting cell, a second light emitting cell, and a third light emitting cell including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, respectively;
    상기 제1 내지 제3 발광셀들을 독립적으로 구동할 수 있도록 상기 제1 내지 제3 발광셀들에 전기적으로 접속된 패드들;Pads electrically connected to the first through third light emitting cells to independently drive the first through third light emitting cells;
    상기 제2 발광셀에서 방출된 광의 파장을 변환하는 제2 파장변환기; 및A second wavelength converter for converting a wavelength of light emitted from the second light emitting cell; And
    상기 제3 발광셀에서 방출된 광의 파장을 변환하는 제3 파장변환기를 포함하되, 상기 제3 파장변환기는 상기 제2 파장변환기보다 더 장파장으로 광의 파장을 변환하고,And a third wavelength converter for converting a wavelength of light emitted from the third light emitting cell, wherein the third wavelength converter converts the wavelength of light to a wavelength longer than that of the second wavelength converter,
    상기 제2 발광셀은 상기 제1 발광셀보다 더 큰 면적을 가지며,The second light emitting cell has a larger area than the first light emitting cell,
    상기 제3 발광셀은 상기 제2 발광셀보다 더 큰 면적을 가지는 발광 소자.Wherein the third light emitting cell has a larger area than the second light emitting cell.
  2. 제 1항에 있어서,The method according to claim 1,
    상기 제1 내지 제3 발광셀은 청색광을 방출하며,The first to third light emitting cells emit blue light,
    상기 제2 파장변환기는 상기 청색광을 녹색광으로 변환하고,The second wavelength converter converts the blue light into green light,
    상기 제3 파장변환기는 상기 청색광을 적색광으로 변환하는 발광 소자.And the third wavelength converter converts the blue light into red light.
  3. 제2 항에 있어서,3. The method of claim 2,
    상기 제1 발광셀에 대한 제2 발광셀 및 제3 발광셀의 면적비는 각각 상기 제2 파장변환기의 광 변환 효율 및 상기 제3 파장변환기의 광 변환 효율에 반비례하는 발광 소자.Wherein the area ratio of the second light emitting cell and the third light emitting cell to the first light emitting cell is inversely proportional to the light conversion efficiency of the second wavelength converter and the light conversion efficiency of the third wavelength converter, respectively.
  4. 제1 항에 있어서,The method according to claim 1,
    상기 제1 발광셀에서 방출된 광의 파장을 제1 파장의 광으로 변환하는 제1 파장변환기를 더 포함하되, 상기 제1 파장변환기는 상기 제2 파장변환기보다 더 단파장으로 광의 파장을 변환하고,And a first wavelength converter for converting a wavelength of light emitted from the first light emitting cell into light of a first wavelength, wherein the first wavelength converter converts the wavelength of light to a shorter wavelength than the second wavelength converter,
    상기 제1 내지 제3 발광셀은 자외선을 방출하는 발광 소자.Wherein the first to third light emitting cells emit ultraviolet light.
  5. 제4 항에 있어서,5. The method of claim 4,
    상기 제1 파장변환기는 자외선을 청색광으로 변환하고,The first wavelength converter converts ultraviolet light into blue light,
    상기 제2 파장변환기는 상기 자외선을 녹색광으로 변환하고,The second wavelength converter converts the ultraviolet light into green light,
    상기 제3 파장변환기는 상기 자외선을 적색광으로 변환하는 발광 소자.And the third wavelength converter converts the ultraviolet light into red light.
  6. 제5 항에 있어서,6. The method of claim 5,
    상기 제1 발광셀에 대한 제2 발광셀 및 제3 발광셀의 면적비는 각각 상기 제1 파장변환기에 대한 상기 제2 파장변환기의 광 변환 효율비 및 상기 제3 파장변환기의 광 변환 효율비에 반비례하는 발광 소자.The area ratio of the second light emitting cell and the third light emitting cell to the first light emitting cell is inversely proportional to the light conversion efficiency ratio of the second wavelength converter to the first wavelength converter and the light conversion efficiency ratio of the third wavelength converter to the first wavelength converter, .
  7. 제4 항에 있어서,5. The method of claim 4,
    상기 제1 파장변환기 상에 배치된 제1 컬러 필터;A first color filter disposed on the first wavelength converter;
    상기 제2 파장변환기 상에 배치된 제2 컬러 필터; 및A second color filter disposed on the second wavelength converter; And
    상기 제3 파장변환기 상에 배치된 제3 컬러 필터를 더 포함하는 발광 소자.And a third color filter disposed on the third wavelength converter.
  8. 제1 항에 있어서,The method according to claim 1,
    상기 제2 파장변환기 상에 배치된 제2 컬러 필터; 및A second color filter disposed on the second wavelength converter; And
    상기 제3 파장변환기 상에 배치된 제3 컬러 필터를 더 포함하는 발광 소자.And a third color filter disposed on the third wavelength converter.
  9. 제1 항에 있어서,The method according to claim 1,
    상기 제1 내지 제3 발광셀이 배치된 기판을 더 포함하는 발광 소자.And a substrate on which the first to third light emitting cells are disposed.
  10. 제1 항에 있어서,The method according to claim 1,
    상기 제1 발광셀 내지 상기 제3 발광셀 사이 각각에 제공되며, 상기 광을 비투과하는 격벽을 포함하고,And barrier ribs provided between the first light emitting cell and the third light emitting cell, respectively,
    상기 제1 발광셀 내지 상기 제3 발광셀의 높이는 상기 격벽의 높이보다 낮고,The height of the first light emitting cell to the third light emitting cell is lower than the height of the partition wall,
    상기 격벽과 상기 제1 발광셀 내지 상기 제3 발광셀간 거리는 10㎛ 내지 20㎛ 이하인 발광 소자.And the distance between the partition and the first light emitting cell to the third light emitting cell is 10 占 퐉 to 20 占 퐉 or less.
  11. 제10 항에 있어서,11. The method of claim 10,
    상기 제1 발광셀 내지 상기 제3 발광셀 사이에 제공된 상기 격벽은 서로 연결된 일체인 발광 소자.And the barrier ribs provided between the first light emitting cell and the third light emitting cell are connected to each other.
  12. 제10 항에 있어서,11. The method of claim 10,
    상기 격벽의 폭은 상기 기판으로부터 멀어짐에 따라 증가하는 발광 소자.And the width of the partition wall increases as the distance from the substrate increases.
  13. 제10 항에 있어서,11. The method of claim 10,
    상기 기판의 평면상 면적 중 상기 격벽이 차지하는 면적의 비는 0.5 내지 0.99인 발광 소자.Wherein a ratio of an area occupied by the barrier ribs in a planar area of the substrate is 0.5 to 0.99.
  14. 제10 항에 있어서,11. The method of claim 10,
    상기 격벽의 높이는 15㎛ 내지 115㎛인 발광 소자.And the height of the barrier rib is 15 占 퐉 to 115 占 퐉.
  15. 제9 항에 있어서,10. The method of claim 9,
    상기 제1 발광셀은 적색광을 출사하고, 상기 제2 발광셀은 녹색광을 출사하고, 상기 제3 발광셀은 청색광을 출사하고,Wherein the first light emitting cell emits red light, the second light emitting cell emits green light, the third light emitting cell emits blue light,
    상기 제1 발광셀과 상기 제2 발광셀간 거리는 상기 제1 발광셀과 상기 제3 발광셀간 거리와 동일한 발광 소자.Wherein a distance between the first light emitting cell and the second light emitting cell is equal to a distance between the first light emitting cell and the third light emitting cell.
  16. 제15 항에 있어서,16. The method of claim 15,
    상기 제1 발광셀과 상기 제2 발광셀간 거리는 상기 제2 발광셀과 상기 제3 발광셀간 거리와 상이한 발광 소자.Wherein a distance between the first light emitting cell and the second light emitting cell is different from a distance between the second light emitting cell and the third light emitting cell.
  17. 제16 항에 있어서,17. The method of claim 16,
    상기 제1 발광셀 내지 상기 제3 발광셀은 하나의 발광 소자 내에 제공되고,The first light emitting cell to the third light emitting cell are provided in one light emitting element,
    일 화소에 제공된 상기 제1 발광셀 내지 상기 제3 발광셀간 거리는, 상기 일 화소에 제공된 상기 제1 발광셀 내지 상기 제3 발광셀과 상기 일 화소와 인접한 화소에 제공된 제1 발광셀 내지 제3 발광셀간 거리보다 짧은 발광 소자.The distance between the first light emitting cell and the third light emitting cell provided in one pixel is different from the distance between the first light emitting cell to the third light emitting cell provided in the pixel and the third light emitting cell provided in the pixel adjacent to the one pixel, Emitting device is shorter than an inter-cell distance.
  18. 제9항에 있어서,10. The method of claim 9,
    상기 제1 발광셀 내지 상기 제3 발광셀은 삼각형 형태로 배치되는 발광 소자.Wherein the first light emitting cell to the third light emitting cell are arranged in a triangular shape.
  19. 제9 항에 있어서,10. The method of claim 9,
    상기 제1 발광셀 내지 상기 제3 발광셀은 일자형 형태로 배치되는 발광 소자.Wherein the first light emitting cell to the third light emitting cell are arranged in a straight line shape.
  20. 제9 항에 있어서,10. The method of claim 9,
    상기 제1 내지 제3 발광셀은 제1 도전형 반도체층을 공유하는 발광 소자.Wherein the first to third light emitting cells share a first conductivity type semiconductor layer.
  21. 제20 항에 있어서,21. The method of claim 20,
    상기 패드들 중 상기 공유된 제1 도전형 반도체층에 전기적으로 접속된 패드에서 연장하는 연장부를 더 포함하는 발광 소자.And an extension extending from a pad electrically connected to the shared first conductive type semiconductor layer among the pads.
  22. 제1 항에 있어서,The method according to claim 1,
    상기 제2 파장변환기와 상기 제3 파장변환기는 동일 필름 내에 위치하는 발광 소자.Wherein the second wavelength converter and the third wavelength converter are located in the same film.
  23. 제1 항에 있어서,The method according to claim 1,
    상기 제2 파장변환기와 상기 제3 파장변환기는 적층 필름 내에 위치하되,Wherein the second wavelength converter and the third wavelength converter are located in a laminated film,
    상기 제2 파장변환기와 상기 제3 파장변환기는 서로 다른 층 내에 위치하는 발광 소자.Wherein the second wavelength converter and the third wavelength converter are located in different layers.
  24. 기판;Board;
    상기 기판 상에 제공되고, 적색광, 녹색광, 및 청색광을 출사하는 제1 발광셀, 제2 발광셀, 및 제3 발광셀;A first light emitting cell, a second light emitting cell, and a third light emitting cell provided on the substrate and emitting red light, green light, and blue light;
    상기 제1 발광셀 내지 상기 제3 발광셀 사이 각각에 제공되며, 상기 광을 비투과하는 격벽을 포함하고,And barrier ribs provided between the first light emitting cell and the third light emitting cell, respectively,
    상기 제1 발광셀 내지 상기 제3 발광셀의 높이는 상기 격벽의 높이보다 낮고,The height of the first light emitting cell to the third light emitting cell is lower than the height of the partition wall,
    상기 격벽과 상기 제1 발광셀 내지 상기 제3 발광셀간 거리는 5㎛이하인 발광 소자.Wherein a distance between the barrier ribs and the first light emitting cell to the third light emitting cell is 5 占 퐉 or less.
  25. 회로 기판; 및A circuit board; And
    상기 회로 기판 상에 배열된 복수의 화소를 포함하되,A plurality of pixels arranged on the circuit board,
    상기 복수의 화소 각각은 제1 항 내지 제24 항의 어느 한 항의 발광 소자인 표시 장치.Wherein each of the plurality of pixels is the light emitting element according to any one of claims 1 to 24.
PCT/KR2018/011425 2017-09-29 2018-09-27 Light emitting device and display device having same WO2019066491A1 (en)

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CN201880037296.0A CN110720144B (en) 2017-09-29 2018-09-27 Light emitting element and display device having the same
US16/646,537 US11641008B2 (en) 2017-09-29 2018-09-27 Light emitting device and display apparatus including the same
BR112020005890-4A BR112020005890A2 (en) 2017-09-29 2018-09-27 light-emitting device and display device including the same
US17/509,050 US11824145B2 (en) 2017-09-29 2021-10-24 Light emitting device and display apparatus including the same
US18/503,590 US20240079534A1 (en) 2017-09-29 2023-11-07 Light emitting device and display apparatus including the same
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