WO2020251076A1 - Dispositif d'affichage utilisant une micro-del et son procédé de fabrication - Google Patents

Dispositif d'affichage utilisant une micro-del et son procédé de fabrication Download PDF

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Publication number
WO2020251076A1
WO2020251076A1 PCT/KR2019/007092 KR2019007092W WO2020251076A1 WO 2020251076 A1 WO2020251076 A1 WO 2020251076A1 KR 2019007092 W KR2019007092 W KR 2019007092W WO 2020251076 A1 WO2020251076 A1 WO 2020251076A1
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Prior art keywords
light emitting
semiconductor light
emitting device
assembly groove
substrate
Prior art date
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PCT/KR2019/007092
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English (en)
Korean (ko)
Inventor
최봉석
Original Assignee
엘지전자 주식회사
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Publication date
Application filed by 엘지전자 주식회사 filed Critical 엘지전자 주식회사
Priority to EP19932425.2A priority Critical patent/EP3985732A4/fr
Priority to US17/616,553 priority patent/US20220230997A1/en
Publication of WO2020251076A1 publication Critical patent/WO2020251076A1/fr

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    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18161—Exposing the passive side of the semiconductor or solid-state body of a flip chip
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Definitions

  • the present invention is applicable to the technical field related to a display device, and relates to, for example, a display device using a micro LED (Light Emitting Diode) and a method of manufacturing the same.
  • a micro LED Light Emitting Diode
  • LCD Liquid Crystal Display
  • OLED Organic Light Emitting Diodes
  • LED Light Emitting Diode
  • GaAsP compound semiconductor in 1962 has been used as a light source for display images in electronic devices including information communication devices. Accordingly, a method for solving the above-described problems by implementing a display using the semiconductor light emitting device may be proposed.
  • the semiconductor light emitting device has various advantages, such as a long lifespan, low power consumption, excellent initial driving characteristics, and high vibration resistance, compared to a filament-based light emitting device.
  • the technical problem to be solved of the present invention is to provide a display device capable of precise position control and a manufacturing method thereof when assembling a semiconductor light emitting device to a substrate.
  • an object of the present invention is to provide a display device and a method of manufacturing the same in which a semiconductor light emitting device is assembled to a substrate and then self-aligned to an exact position of a substrate through a reflow process.
  • a method of manufacturing a display device to achieve the above object includes: growing a plurality of LEDs on a growth substrate; Forming a member having thermal flow characteristics on at least one side of the plurality of LEDs; Separating the plurality of LEDs on which the member is formed from the growth substrate; Preparing a wiring board having a plurality of assembly grooves defining pixel regions; Assembling the separated LED into an assembly groove of the wiring board; And reflowing the wiring board to which the LEDs are assembled by heat.
  • the step of preparing the wiring board includes applying an adhesive layer to the assembly groove and the periphery of the assembly groove.
  • the component of the adhesive layer is characterized in that it includes a component having thermal flow properties.
  • the components of the adhesive layer are the same as those of the member.
  • the component of the adhesive layer is characterized in that it contains at least one of epoxy, acrylic, silicone, polyimide (PI), and benzocyclobutene (BCB).
  • the adhesive layer is characterized in that it contains a binder and a monomer component that induces thermal flow characteristics in a material having no thermal flow characteristics.
  • the assembly groove has an opening and a bottom surface, and an area of the opening is larger than an area of the bottom surface.
  • forming the member includes curing the member by UV (Ultra-Violet) curing or thermal curing.
  • preparing the wiring board includes providing a metal reflective layer under the assembly groove.
  • the step of assembling in the assembly groove includes the step of self-assembling the LED in the assembly groove by an electromagnetic field.
  • the assembling in the assembly groove includes transferring the LED to a transfer substrate, and assembling the LED transferred to the transfer substrate into the assembly groove of the wiring board through a stamp process.
  • the LED is characterized in that the LED (Micro-LED) having a micro size.
  • the substrate is characterized in that it includes at least one of glass, a conductor, or a flexible polymer material.
  • a display device includes a substrate having an assembly groove formed thereon; An adhesive layer covering the assembly groove and the periphery of the assembly groove; And an LED assembled in the assembly groove on which the adhesive layer is formed, wherein the LED has a member having thermal flow characteristics on at least one side thereof, the assembly groove has an opening and a bottom surface, and the area of the opening is the floor It is characterized in that it is larger than the area of the surface.
  • an adhesive layer having thermal flow characteristics is applied to an assembly groove in which a semiconductor light emitting device is assembled. Thereafter, the semiconductor light emitting device is assembled to a substrate and, through a reflow process, the semiconductor light emitting device is self-aligned to the correct position of the assembly groove, thereby improving positional accuracy.
  • the semiconductor light emitting device is assembled on a substrate, and thereafter, the chip arrangement error can be minimized in the planarization process and the electrode formation process, so that a separate wiring design, etc. There is a technical effect of saving.
  • FIG. 1 is a conceptual diagram showing an embodiment of a display device using a semiconductor light emitting device of the present invention.
  • FIG. 2 is a partially enlarged view of part A of FIG. 1.
  • 3A and 3B are cross-sectional views taken along lines B-B and C-C of FIG. 2.
  • FIG. 4 is a conceptual diagram illustrating the flip chip type semiconductor light emitting device of FIG. 3.
  • 5A to 5C are conceptual diagrams illustrating various forms of implementing colors in relation to a flip chip type semiconductor light emitting device.
  • FIG. 6 is a cross-sectional view showing a method of manufacturing a display device using the semiconductor light emitting device of the present invention.
  • FIG. 7 is a perspective view showing another embodiment of a display device using the semiconductor light emitting device of the present invention.
  • FIG. 8 is a cross-sectional view taken along line D-D of FIG. 7.
  • FIG. 9 is a conceptual diagram illustrating the vertical semiconductor light emitting device of FIG. 8.
  • FIG. 10 is a flowchart illustrating a method of manufacturing a display device using a semiconductor light emitting device according to another embodiment of the present invention.
  • 11A to 11E are cross-sectional views illustrating a method of growing the semiconductor light emitting device of the present invention on a growth substrate.
  • FIG. 12 is a cross-sectional view illustrating a process of forming a member having thermal flow characteristics on a side surface of the semiconductor light emitting device of the present invention.
  • FIG. 13 is a plan view illustrating a shape of the semiconductor light emitting device in which the member of FIG. 12 is formed when viewed from above.
  • FIGS. 14A are cross-sectional views illustrating a method of manufacturing a substrate having an assembly groove and an adhesive layer according to the present invention.
  • FIG. 14B are plan views of the substrate fabricated in FIG. 14A viewed from above.
  • 15A is a cross-sectional view illustrating a process of manufacturing a substrate having an assembly groove and an adhesive layer formed thereon in a method different from that of FIG. 14A.
  • FIG. 15B is a plan view of the substrate fabricated according to FIG. 15A viewed from above.
  • 16 is a diagram illustrating a direction in which the semiconductor light emitting devices are moved during a reflow process after assembling the semiconductor light emitting devices on a substrate.
  • FIG. 17 are cross-sectional views of some of the semiconductor light emitting device packages shown in FIG. 16.
  • FIG. 18 is a diagram showing a principle in which a semiconductor light emitting device is self-aligned in an assembly groove through a reflow process.
  • 19 is an image obtained by observing a shape of an actual semiconductor light emitting device package assembled on a substrate having an assembly groove with an optical microscope.
  • FIG. 20 is an image obtained by observing the degree of movement of the semiconductor light emitting device package of FIG. 19 after a reflow process with an optical microscope.
  • an element such as a layer, region or substrate is referred to as being “on” another component, it will be understood that it may exist directly on the other element or there may be intermediate elements between them. There will be.
  • the display device described herein is a concept including all display devices that display information as a unit pixel or a set of unit pixels. Therefore, it can be applied to parts, not limited to finished products.
  • a panel corresponding to a part of a digital TV is also independently a display device in the present specification.
  • Finished products include mobile phones, smart phones, laptop computers, digital broadcasting terminals, personal digital assistants (PDAs), portable multimedia players (PMPs), navigation, Slate PC, Tablet PC, and Ultra. This could include books, digital TVs, and desktop computers.
  • the semiconductor light emitting device mentioned in this specification is a concept including LEDs, micro LEDs, and the like, and may be used interchangeably.
  • FIG. 1 is a conceptual diagram showing an embodiment of a display device using a semiconductor light emitting device of the present invention.
  • information processed by a controller (not shown) of the display apparatus 100 may be displayed using a flexible display.
  • Flexible displays include displays that can be bent, or bendable, or twistable, or foldable, or rollable by external force, for example.
  • the flexible display may be a display manufactured on a thin and flexible substrate that can be bent, bent, or foldable or rolled like paper while maintaining the display characteristics of a conventional flat panel display.
  • the display area of the flexible display becomes a flat surface.
  • the display area may be a curved surface.
  • the information displayed in the second state may be visual information output on a curved surface. This visual information is implemented by independently controlling light emission of sub-pixels arranged in a matrix form.
  • the unit pixel means, for example, a minimum unit for implementing one color.
  • the unit pixel of the flexible display may be implemented by a semiconductor light emitting device.
  • a light emitting diode LED
  • the light emitting diode is formed in a small size, and through this, it can serve as a unit pixel even in the second state.
  • FIG. 2 is a partially enlarged view of part A of FIG. 1.
  • 3A and 3B are cross-sectional views taken along lines B-B and C-C of FIG. 2.
  • FIG. 4 is a conceptual diagram illustrating the flip chip type semiconductor light emitting device of FIG. 3.
  • 5A to 5C are conceptual diagrams illustrating various forms of implementing colors in relation to a flip chip type semiconductor light emitting device.
  • a display device 100 using a passive matrix (PM) type semiconductor light emitting device is illustrated as a display device 100 using a semiconductor light emitting device.
  • PM passive matrix
  • AM active matrix
  • the display device 100 shown in FIG. 1 includes a substrate 110, a first electrode 120, a conductive adhesive layer 130, a second electrode 140, and at least one semiconductor light emitting device as shown in FIG. Includes 150.
  • the substrate 110 may be a flexible substrate.
  • the substrate 110 may include glass or polyimide (PI).
  • PI polyimide
  • any material such as polyethylene naphthalate (PEN) and polyethylene terephthalate (PET) may be used as long as it has insulation and is flexible.
  • the substrate 110 may be a transparent material or an opaque material.
  • the substrate 110 may be a wiring board on which the first electrode 120 is disposed, and thus the first electrode 120 may be positioned on the substrate 110.
  • the insulating layer 160 may be disposed on the substrate 110 on which the first electrode 120 is located, and the auxiliary electrode 170 may be disposed on the insulating layer 160.
  • a state in which the insulating layer 160 is stacked on the substrate 110 may be a single wiring board.
  • the insulating layer 160 is made of an insulating and flexible material such as polyimide (PI), PET, and PEN, and may be formed integrally with the substrate 110 to form a single substrate.
  • the auxiliary electrode 170 is an electrode that electrically connects the first electrode 120 and the semiconductor light emitting device 150, and is positioned on the insulating layer 160 and is disposed corresponding to the position of the first electrode 120.
  • the auxiliary electrode 170 has a dot shape and may be electrically connected to the first electrode 120 through an electrode hole 171 penetrating through the insulating layer 160.
  • the electrode hole 171 may be formed by filling a via hole with a conductive material.
  • a conductive adhesive layer 130 is formed on one surface of the insulating layer 160, but the present invention is not limited thereto.
  • a layer performing a specific function is formed between the insulating layer 160 and the conductive adhesive layer 130, or a structure in which the conductive adhesive layer 130 is disposed on the substrate 110 without the insulating layer 160 It is also possible.
  • the conductive adhesive layer 130 may serve as an insulating layer.
  • the conductive adhesive layer 130 may be a layer having adhesiveness and conductivity, and for this purpose, a material having conductivity and a material having adhesiveness may be mixed in the conductive adhesive layer 130.
  • the conductive adhesive layer 130 has ductility, thereby enabling a flexible function in the display device.
  • the conductive adhesive layer 130 may be an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing conductive particles, or the like.
  • ACF anisotropic conductive film
  • the conductive adhesive layer 130 allows electrical interconnection in the Z direction passing through the thickness, but may be configured as a layer having electrical insulation in the horizontal X-Y direction. Therefore, the conductive adhesive layer 130 may be referred to as a Z-axis conductive layer (however, hereinafter referred to as a'conductive adhesive layer').
  • the anisotropic conductive film is a film in which an anisotropic conductive medium is mixed with an insulating base member, and when heat and pressure are applied, only a specific portion becomes conductive by the anisotropic conductive medium.
  • heat and pressure are applied to the anisotropic conductive film, but other methods may be applied in order for the anisotropic conductive film to partially have conductivity.
  • Other methods described above may be, for example, that only one of the above heat and pressure is applied or UV cured or the like.
  • the anisotropic conductive medium may be, for example, conductive balls or conductive particles.
  • the anisotropic conductive film is a film in which conductive balls are mixed with an insulating base member, and when heat and pressure are applied, only a specific portion becomes conductive by the conductive balls.
  • a core of a conductive material may contain a plurality of particles covered by an insulating film made of a polymer material, and in this case, a portion to which heat and pressure is applied is destroyed by the insulating film and becomes conductive by the core. .
  • the shape of the core may be deformed to form a layer in contact with each other in the thickness direction of the film.
  • heat and pressure are applied to the anisotropic conductive film as a whole, and an electrical connection in the Z-axis direction is partially formed due to a height difference of a counterpart adhered by the anisotropic conductive film.
  • the anisotropic conductive film may contain a plurality of particles coated with a conductive material in an insulating core.
  • the part to which heat and pressure are applied is deformed (pressed together) to have conductivity in the thickness direction of the film.
  • a form in which the conductive material penetrates the insulating base member in the Z-axis direction and has conductivity in the thickness direction of the film is also possible.
  • the conductive material may have a pointed end.
  • the anisotropic conductive film may be a fixed array anisotropic conductive film (ACF) in which conductive balls are inserted into one surface of an insulating base member. More specifically, the insulating base member is formed of an adhesive material, and the conductive ball is intensively disposed on the bottom of the insulating base member, and when heat and pressure are applied from the base member, it is deformed together with the conductive ball. Accordingly, it has conductivity in the vertical direction.
  • ACF fixed array anisotropic conductive film
  • the present invention is not necessarily limited thereto, and the anisotropic conductive film has a form in which conductive balls are randomly mixed in an insulating base member, or consists of a plurality of layers, and a form in which conductive balls are disposed on one layer (double- ACF) etc. are all possible.
  • the anisotropic conductive paste is a combination of a paste and a conductive ball, and may be a paste in which conductive balls are mixed with an insulating and adhesive base material.
  • the solution containing conductive particles may be a solution containing conductive particles or nanoparticles.
  • the second electrode 140 is positioned on the insulating layer 160 to be spaced apart from the auxiliary electrode 170. That is, the conductive adhesive layer 130 is disposed on the insulating layer 160 on which the auxiliary electrode 170 and the second electrode 140 are located.
  • the semiconductor light emitting device 150 After forming the conductive adhesive layer 130 with the auxiliary electrode 170 and the second electrode 140 positioned on the insulating layer 160, the semiconductor light emitting device 150 is connected in a flip chip form by applying heat and pressure. Then, the semiconductor light emitting device 150 is electrically connected to the first electrode 120 and the second electrode 140.
  • the semiconductor light emitting device may be a flip chip type light emitting device.
  • the semiconductor light emitting device includes a p-type electrode 156, a p-type semiconductor layer 155 on which the p-type electrode 156 is formed, an active layer 154 formed on the p-type semiconductor layer 155, and an active layer ( And an n-type semiconductor layer 153 formed on 154) and an n-type electrode 152 disposed horizontally apart from the p-type electrode 156 on the n-type semiconductor layer 153.
  • the p-type electrode 156 may be electrically connected by the auxiliary electrode 170 and the conductive adhesive layer 130 shown in FIG. 3, and the n-type electrode 152 is electrically connected to the second electrode 140. Can be connected to.
  • the auxiliary electrode 170 is formed to be elongated in one direction, so that one auxiliary electrode may be electrically connected to the plurality of semiconductor light emitting devices 150.
  • one auxiliary electrode may be electrically connected to the plurality of semiconductor light emitting devices 150.
  • p-type electrodes of the left and right semiconductor light emitting devices with the auxiliary electrode as the center may be electrically connected to one auxiliary electrode.
  • the semiconductor light emitting device 150 is pressed into the conductive adhesive layer 130 by heat and pressure, through which the portion between the p-type electrode 156 and the auxiliary electrode 170 of the semiconductor light emitting device 150 And, only a portion between the n-type electrode 152 and the second electrode 140 of the semiconductor light emitting device 150 has conductivity, and the remaining portion does not have conductivity because there is no press-fitting of the semiconductor light emitting device.
  • the conductive adhesive layer 130 not only mutually couples the semiconductor light emitting device 150 and the auxiliary electrode 170 and between the semiconductor light emitting device 150 and the second electrode 140, but also forms an electrical connection.
  • the plurality of semiconductor light emitting devices 150 constitute a light emitting device array, and a phosphor layer 180 is formed in the light emitting device array.
  • the light emitting device array may include a plurality of semiconductor light emitting devices having different luminance values.
  • Each semiconductor light emitting device 150 constitutes a unit pixel, and is electrically connected to the first electrode 120.
  • the first electrode 120 may be plural, the semiconductor light emitting elements are arranged in rows, for example, and the semiconductor light emitting elements of each row may be electrically connected to any one of the plurality of first electrodes.
  • semiconductor light emitting devices are connected in a flip chip form, semiconductor light emitting devices grown on a transparent dielectric substrate can be used. Further, the semiconductor light emitting devices may be, for example, nitride semiconductor light emitting devices. Since the semiconductor light emitting device 150 has excellent luminance, individual unit pixels can be configured with a small size.
  • a partition wall 190 may be formed between the semiconductor light emitting devices 150.
  • the partition wall 190 may serve to separate individual unit pixels from each other, and may be integrally formed with the conductive adhesive layer 130.
  • the base member of the anisotropic conductive film may form the partition wall.
  • the partition wall 190 may have reflective properties and a contrast ratio may be increased even without a separate black insulator.
  • a reflective partition wall may be separately provided as the partition wall 190.
  • the partition wall 190 may include a black or white insulator depending on the purpose of the display device. When a partition wall of a white insulator is used, it is possible to increase reflectivity, and when a partition wall of a black insulator is used, it is possible to increase the contrast while having reflective characteristics.
  • the phosphor layer 180 may be located on the outer surface of the semiconductor light emitting device 150.
  • the semiconductor light emitting device 150 is a blue semiconductor light emitting device emitting blue (B) light
  • the phosphor layer 180 performs a function of converting the blue (B) light into a color of a unit pixel.
  • the phosphor layer 180 may be a red phosphor 181 or a green phosphor 182 constituting individual pixels.
  • a red phosphor 181 capable of converting blue light into red (R) light may be stacked on a blue semiconductor light emitting device, and at a position forming a green unit pixel, blue A green phosphor 182 capable of converting blue light into green (G) light may be stacked on the semiconductor light emitting device.
  • a blue semiconductor light emitting device may be used alone in a portion of the blue unit pixel.
  • unit pixels of red (R), green (G), and blue (B) may form one pixel.
  • a phosphor of one color may be stacked along each line of the first electrode 120. Accordingly, one line of the first electrode 120 may be an electrode that controls one color. That is, along the second electrode 140, red (R), green (G), and blue (B) may be sequentially disposed, and a unit pixel may be implemented through this.
  • unit pixels of red (R), green (G), and blue (B) can be implemented by combining the semiconductor light emitting device 150 and the quantum dot (QD) instead of the phosphor. have.
  • a black matrix 191 may be disposed between each of the phosphor layers in order to improve contrast. That is, the black matrix 191 may improve contrast of the contrast.
  • the present invention is not necessarily limited thereto, and other structures for implementing blue, red, and green colors may be applied.
  • each of the semiconductor light emitting devices 150 is made of gallium nitride (GaN) as a main material, and indium (In) and/or aluminum (Al) are added together to emit various light including blue. It can be implemented as a light emitting device.
  • GaN gallium nitride
  • Al aluminum
  • the semiconductor light emitting device may be a red, green, and blue semiconductor light emitting device to form a sub-pixel, respectively.
  • red, green, and blue semiconductor light emitting devices R, G, B
  • R, G, B red, green, and blue semiconductor light emitting devices
  • unit pixels of red, green, and blue by red, green, and blue semiconductor light emitting devices They form one pixel, through which a full color display can be implemented.
  • the semiconductor light emitting device may include a white light emitting device W in which a yellow phosphor layer is provided for each individual device.
  • a red phosphor layer 181, a green phosphor layer 182, and a blue phosphor layer 183 may be provided on the white light emitting device W.
  • a unit pixel may be formed by using a color filter in which red, green, and blue are repeated on the white light emitting device W.
  • a structure in which a red phosphor layer 181, a green phosphor layer 182, and a blue phosphor layer 183 are provided on the ultraviolet light emitting device UV is also possible.
  • the semiconductor light emitting device can be used not only for visible light but also for ultraviolet (UV) light, and the ultraviolet (UV) can be extended in the form of a semiconductor light emitting device that can be used as an excitation source of the upper phosphor. .
  • the semiconductor light emitting device is positioned on the conductive adhesive layer to constitute a unit pixel in the display device. Since the semiconductor light emitting device has excellent luminance, individual unit pixels can be configured even with a small size.
  • the individual semiconductor light emitting device 150 may have, for example, a side length of 80 ⁇ m or less, and may be a rectangular or square device. In the case of a rectangle, the size may be 20X80 ⁇ m or less.
  • the distance between the semiconductor light emitting devices is relatively large enough.
  • the display device using the semiconductor light emitting device described above can be manufactured by a new type of manufacturing method. Hereinafter, the manufacturing method will be described with reference to FIG. 6.
  • FIG. 6 is a cross-sectional view showing a method of manufacturing a display device using the semiconductor light emitting device of the present invention.
  • a conductive adhesive layer 130 is formed on the insulating layer 160 on which the auxiliary electrode 170 and the second electrode 140 are positioned.
  • An insulating layer 160 is stacked on the first substrate 110 to form one substrate (or wiring board), and the first electrode 120, the auxiliary electrode 170, and the second electrode 140 are formed on the wiring board. Is placed.
  • the first electrode 120 and the second electrode 140 may be disposed in a mutually orthogonal direction.
  • the first substrate 110 and the insulating layer 160 may each include glass or polyimide (PI).
  • the conductive adhesive layer 130 may be implemented by, for example, an anisotropic conductive film, and for this purpose, an anisotropic conductive film may be applied to a substrate on which the insulating layer 160 is positioned.
  • the second substrate 112 corresponding to the positions of the auxiliary electrodes 170 and the second electrodes 140 and on which the plurality of semiconductor light emitting elements 150 constituting individual pixels are positioned is formed, and the semiconductor light emitting elements ( 150) is disposed to face the auxiliary electrode 170 and the second electrode 140.
  • the second substrate 112 is a growth substrate on which the semiconductor light emitting device 150 is grown, and may be a spire substrate or a silicon substrate.
  • the semiconductor light emitting device When the semiconductor light emitting device is formed in units of a wafer, it can be effectively used in a display device by having a gap and a size capable of forming a display device.
  • the wiring board and the second board 112 are thermally compressed.
  • the wiring board and the second board 112 may be thermally compressed by applying an ACF press head.
  • the wiring board and the second board 112 are bonded by the thermal compression. Due to the characteristics of the anisotropic conductive film having conductivity by thermal compression, only the portion between the semiconductor light emitting device 150 and the auxiliary electrode 170 and the second electrode 140 has conductivity, through which electrodes and semiconductor light emission
  • the device 150 may be electrically connected.
  • the semiconductor light emitting device 150 is inserted into the anisotropic conductive film, and a partition wall may be formed between the semiconductor light emitting devices 150 through this.
  • the second substrate 112 is removed.
  • the second substrate 112 may be removed using a laser lift-off method (LLO) or a chemical lift-off method (CLO).
  • LLO laser lift-off method
  • CLO chemical lift-off method
  • a transparent insulating layer (not shown) may be formed by coating silicon oxide (SiOx) or the like on the wiring board to which the semiconductor light emitting device 150 is bonded.
  • the semiconductor light-emitting device 150 is a blue semiconductor light-emitting device that emits blue (B) light, and a red or green phosphor for converting the blue (B) light into the color of a unit pixel emits the blue semiconductor light.
  • a layer can be formed on one side of the device.
  • the manufacturing method or structure of a display device using the semiconductor light emitting device described above may be modified in various forms.
  • a vertical semiconductor light emitting device may also be applied to the display device described above.
  • FIG. 7 is a perspective view showing another embodiment of a display device using the semiconductor light emitting device of the present invention
  • FIG. 8 is a cross-sectional view taken along the line DD of FIG. 7
  • FIG. 9 is a conceptual diagram showing the vertical semiconductor light emitting device of FIG. to be.
  • the display device may be a display device using a passive matrix (PM) type vertical semiconductor light emitting device.
  • PM passive matrix
  • the display device includes a substrate 210, a first electrode 220, a conductive adhesive layer 230, a second electrode 240, and at least one semiconductor light emitting device 250.
  • the substrate 210 is a wiring board on which the first electrode 220 is disposed, and may include polyimide (PI) to implement a flexible display device.
  • PI polyimide
  • any material that has insulation and is flexible may be used.
  • the first electrode 220 is positioned on the substrate 210 and may be formed as an electrode having a long bar shape in one direction.
  • the first electrode 220 may be formed to serve as a data electrode.
  • the conductive adhesive layer 230 is formed on the substrate 210 on which the first electrode 220 is located.
  • the conductive adhesive layer 230 is a solution containing anisotropy conductive film (ACF), anisotropic conductive paste, and conductive particles. ), etc.
  • ACF anisotropy conductive film
  • anisotropic conductive paste anisotropic conductive paste
  • conductive particles conductive particles.
  • the semiconductor light emitting element 250 is connected by applying heat and pressure to the semiconductor light emitting element 250. It is electrically connected to the electrode 220.
  • the semiconductor light emitting device 250 is preferably disposed to be positioned on the first electrode 220.
  • the electrical connection is created because the anisotropic conductive film partially has conductivity in the thickness direction when heat and pressure are applied. Accordingly, in the anisotropic conductive film, it is divided into a part having conductivity and a part not having conductivity in the thickness direction.
  • the conductive adhesive layer 230 implements electrical connection as well as mechanical coupling between the semiconductor light emitting device 250 and the first electrode 220.
  • the semiconductor light emitting device 250 is positioned on the conductive adhesive layer 230, thereby configuring individual pixels in the display device. Since the semiconductor light emitting device 250 has excellent luminance, individual unit pixels can be configured with a small size.
  • the individual semiconductor light emitting device 250 may have, for example, a side length of 80 ⁇ m or less, and may be a rectangular or square device. In the case of a rectangle, for example, it may have a size of 20 ⁇ 80 ⁇ m or less.
  • the semiconductor light emitting device 250 may have a vertical structure.
  • a plurality of second electrodes 240 are disposed between the vertical semiconductor light emitting devices in a direction crossing the length direction of the first electrode 220 and electrically connected to the vertical semiconductor light emitting device 250.
  • such a vertical semiconductor light emitting device includes a p-type electrode 256, a p-type semiconductor layer 255 formed on the p-type electrode 256, and an active layer 254 formed on the p-type semiconductor layer 255. ), an n-type semiconductor layer 253 formed on the active layer 254 and an n-type electrode 252 formed on the n-type semiconductor layer 253.
  • the p-type electrode 256 located at the bottom may be electrically connected by the first electrode 220 and the conductive adhesive layer 230, and the n-type electrode 252 located at the top is a second electrode 240 to be described later. ) And can be electrically connected.
  • the vertical semiconductor light emitting device 250 has a great advantage of reducing a chip size since electrodes can be arranged up and down.
  • a phosphor layer 280 may be formed on one surface of the semiconductor light emitting device 250.
  • the semiconductor light emitting device 250 is a blue semiconductor light emitting device 251 that emits blue (B) light, and a phosphor layer 280 for converting the blue (B) light into a color of a unit pixel is provided.
  • the phosphor layer 280 may be a red phosphor 281 and a green phosphor 282 constituting individual pixels.
  • a red phosphor 281 capable of converting blue light into red (R) light may be stacked on a blue semiconductor light emitting device, and at a position forming a green unit pixel, blue A green phosphor 282 capable of converting blue light into green (G) light may be stacked on the semiconductor light emitting device.
  • a blue semiconductor light emitting device may be used alone in a portion of the blue unit pixel. In this case, unit pixels of red (R), green (G), and blue (B) may form one pixel.
  • the present invention is not necessarily limited thereto, and other structures for implementing blue, red, and green colors may be applied as described above in a display device to which a flip chip type light emitting device is applied.
  • the second electrode 240 is positioned between the semiconductor light emitting devices 250 and is electrically connected to the semiconductor light emitting devices 250.
  • the semiconductor light emitting devices 250 may be arranged in a plurality of rows, and the second electrode 240 may be located between the rows of the semiconductor light emitting devices 250.
  • the second electrode 240 may be positioned between the semiconductor light emitting devices 250.
  • the second electrode 240 may be formed as a long bar-shaped electrode in one direction, and may be disposed in a direction perpendicular to the first electrode.
  • the second electrode 240 and the semiconductor light emitting device 250 may be electrically connected by a connection electrode protruding from the second electrode 240.
  • the connection electrode may be an n-type electrode of the semiconductor light emitting device 250.
  • the n-type electrode is formed as an ohmic electrode for ohmic contact, and the second electrode covers at least a portion of the ohmic electrode by printing or vapor deposition. Through this, the second electrode 240 and the n-type electrode of the semiconductor light emitting device 250 may be electrically connected.
  • the second electrode 240 may be positioned on the conductive adhesive layer 230.
  • a transparent insulating layer (not shown) including silicon oxide (SiOx) or the like may be formed on the substrate 210 on which the semiconductor light emitting device 250 is formed.
  • SiOx silicon oxide
  • the second electrode 240 is positioned after the transparent insulating layer is formed, the second electrode 240 is positioned on the transparent insulating layer.
  • the second electrode 240 may be formed to be spaced apart from the conductive adhesive layer 230 or the transparent insulating layer.
  • a transparent electrode such as ITO Indium Tin Oxide
  • the ITO material has poor adhesion to the n-type semiconductor layer. have. Accordingly, according to the present invention, by placing the second electrode 240 between the semiconductor light emitting devices 250, there is an advantage in that a transparent electrode such as ITO is not required. Accordingly, the light extraction efficiency can be improved by using the n-type semiconductor layer and a conductive material having good adhesion as a horizontal electrode without being restricted by the selection of a transparent material.
  • a partition wall 290 may be positioned between the semiconductor light emitting devices 250. That is, a partition wall 290 may be disposed between the vertical semiconductor light emitting devices 250 to isolate the semiconductor light emitting devices 250 constituting individual pixels. In this case, the partition wall 290 may serve to separate individual unit pixels from each other, and may be integrally formed with the conductive adhesive layer 230. For example, by inserting the semiconductor light emitting device 250 into the anisotropic conductive film, the base member of the anisotropic conductive film may form the partition wall.
  • the partition wall 290 may have reflective properties and a contrast ratio may be increased even without a separate black insulator.
  • a reflective partition wall may be separately provided.
  • the partition wall 290 may include a black or white insulator depending on the purpose of the display device.
  • the partition wall 290 is between the vertical semiconductor light emitting element 250 and the second electrode 240. It can be located between. Accordingly, individual unit pixels can be configured with a small size using the semiconductor light emitting device 250, and the distance between the semiconductor light emitting device 250 is relatively large enough, so that the second electrode 240 is connected to the semiconductor light emitting device 250. ), there is an effect of implementing a flexible display device having HD image quality.
  • a black matrix 291 may be disposed between each phosphor to improve contrast. That is, the black matrix 291 can improve contrast of light and dark.
  • the semiconductor light emitting device is disposed on a wiring board in a flip chip type and used as individual pixels.
  • the alignment error should be managed from ⁇ 5 to 10 ⁇ m in the development stage and ⁇ 3 ⁇ m in the mass production management stage, considering the size of the current display semiconductor light emitting device, and is the most important key factor in the panel process yield. .
  • FIG. 10 is a flowchart illustrating a method of manufacturing a display device using a semiconductor light emitting device according to another embodiment of the present invention.
  • an LED (or a semiconductor light emitting device) is grown on a growth substrate (S1010).
  • the semiconductor light emitting device may be a horizontal type semiconductor light emitting device or a vertical type semiconductor light emitting device, but the following description will be described as growing a horizontal type semiconductor light emitting device.
  • a detailed growth method will be described later in FIGS. 11 and 12.
  • the LED (or semiconductor light emitting device) grown on the growth substrate is separated from the growth substrate (S1020).
  • Methods of separating the semiconductor light emitting device from the growth substrate are largely divided into two, for example.
  • the first is that the semiconductor light emitting device of the growth substrate is directly transferred to and separated from the new substrate.
  • the spacing between the semiconductor light emitting devices after the transfer is maintained equal to the spacing of the existing growth substrate.
  • the second method is to be separated individually from the growth substrate and exist as individual semiconductor light emitting devices.
  • the substrate to be transferred may be a donor substrate for another transfer or a wiring board provided with wires so that it can be used as a panel.
  • the transfer process is to transfer the semiconductor light emitting device of the growth substrate to a new substrate as if stamping using an adhesive film or the like.
  • This process is referred to as, for example, a stamp process.
  • the adhesive film may impart conductivity between the substrate and the semiconductor light emitting device using an anisotropic conductive film.
  • a laser lift-off method (Laser Lift-Off, LLO) that selectively separates the device by applying a laser to the opposite surface of the substrate on which the device is grown.
  • LLO Laser Lift-Off
  • the second method for example, it is separated into individual semiconductor light emitting devices to perform a self-assembly process.
  • the self-assembly process refers to a process in which a very large number of semiconductor light emitting devices are assembled to an assembled substrate by the force of an electromagnetic field in a chamber filled with a fluid.
  • the assembly substrate In order to be self-assembled, the assembly substrate must form an assembly groove corresponding to, for example, individual semiconductor light emitting devices, and an assembly electrode should be provided under the assembly groove.
  • the assembly substrate may be located in a chamber filled with a fluid.
  • the semiconductor light-emitting device floating in the fluid includes, for example, a magnetic layer, and can be moved in the direction of the assembled substrate by an assembly device having a magnetic substance acting on the assembly substrate. That is, the semiconductor light emitting element in the chamber can move toward the assembly device by the magnetic field generated by the assembly device.
  • An assembly substrate having an assembly groove is located in a direction moving toward the assembly device, and the semiconductor light emitting device may contact the assembly groove.
  • the semiconductor light emitting device in contact with the assembly groove is fixed by an electric field applied from the assembly electrode formed under the assembly groove.
  • the time required to assemble the semiconductor light emitting devices on a substrate can be drastically reduced.
  • the semiconductor light emitting device of the growth substrate may be separated through a stamp process and transferred to a new substrate at the same time, separated as individual devices, and assembled on a new substrate through a self-assembly process.
  • the LED (or semiconductor light emitting device) of the new substrate performs a step of assembling a wiring board for forming a panel (S1030).
  • the wiring board is provided with an assembly groove for assembling a semiconductor light emitting device, and an adhesive layer having thermal flow characteristics is applied on the upper portion of the assembly groove. Therefore, for example, if the adhesive layer is applied to the substrate used in the step of separating the LED from the growth substrate (S1020), the semiconductor light emitting device may be separated from the growth substrate and assembled to the wiring board at the same time.
  • the thermal flow characteristic is that when heat is applied to the adhesive layer, it has the same fluidity as the fluid flow. Accordingly, when the adhesive layer is formed on an inclined place and then heat is applied, at least a part of the adhesive layer may flow from a high place to a low place.
  • the component of the adhesive layer may be a polymer-based component, and, for example, includes at least one of epoxy, acrylic, silicone, polyimide (PI), and benzocyclobutene (BCB).
  • PI polyimide
  • BCB benzocyclobutene
  • the components of the adhesive layer may contain, for example, a binder and a monomer component that induces thermal flow characteristics in a material having no thermal flow characteristics.
  • the viscosity of the adhesive layer can be variously adjusted from several cp (centi-poise) to several hundred cp.
  • the thermal flow characteristics vary depending on the viscosity, but the influence of the viscosity may be attenuated by controlling the temperature and time in the reflow process. Therefore, in the present invention, it is important whether or not the components of the adhesive layer have thermal flow characteristics, and are not limited to the adhesive layer having a specific range of viscosity, but limiting as necessary falls within the other scope of the present invention.
  • the semiconductor light emitting device is assembled in the assembly groove in which the adhesive layer is formed.
  • an alignment step is performed.
  • the alignment is performed by horizontally moving any one of the donor substrate and the wiring board with respect to the other, and then vertically moving the other one. Thereafter, the semiconductor light emitting element of the donor substrate and the position of the assembly groove of the wiring board corresponding to the semiconductor light emitting element are inspected to overlap each other by a camera sensor, and if overlapped, the semiconductor light emitting element is assembled to fit the assembly groove.
  • the error range of the semiconductor light emitting device assembled in the assembly groove should be within several micrometers.
  • the assembly step (S1030) on the surface of the semiconductor light emitting device before assembly, for example, HDMS (Hexa Methyl Di Silazane) is applied or a SAM (Self-Assembled Monolayer) treatment is applied to attach a functional group such as fluorocarbon. Perform.
  • the HDMS or SAM treatment makes the surface of the semiconductor light emitting device hydrophobic.
  • the adhesive layer is made of an organic component and thus has hydrophobicity, and the treatment increases the adhesion between the semiconductor light emitting device and the adhesive layer.
  • the semiconductor light emitting device and the substrate are stably bonded by placing the substrate assembled with the semiconductor light emitting device in a high temperature chamber, and adjusting the temperature profile and atmospheric gas over time in the chamber. It is a process to do.
  • the reflow process may be performed in a temperature range of about 50°C to 250°C in a hot-plate or oven.
  • the semiconductor light emitting device located above the adhesive layer of the assembly groove through the reflow process is not assembled at the correct position of the assembly groove, due to the thermal flow characteristics of the adhesive layer, the correct position of the assembly groove, that is, the bottom surface of the assembly groove. Will settle in.
  • 11A to 11E are cross-sectional views illustrating a method of growing the semiconductor light emitting device of the present invention on a growth substrate.
  • the growth substrate 1110 may be formed of a material having a light-transmitting property, for example, any one of sapphire (Al2O3), GaN, ZnO, and AlO.
  • the growth substrate 1110 may be formed of a material suitable for growth of semiconductor materials and a carrier wafer.
  • the growth substrate 1110 may be formed of a material having excellent thermal conductivity, including a conductive substrate or an insulating substrate, for example, a SiC substrate having higher thermal conductivity than a sapphire (Al2O3) substrate, or Si, GaAs, GaP, InP And Ga2O3 may be used, but is not limited thereto.
  • the second conductive type semiconductor layer 1120 grown on the growth substrate 1110 is an n-type semiconductor layer, and may be a nitride semiconductor layer such as n-GaN, and the first conductive type semiconductor layer 1140 May be a p-type semiconductor layer.
  • the present invention is not necessarily limited thereto, and an example in which the first conductivity type is n-type and the second conductivity type is p-type is also possible.
  • the first conductive type semiconductor layer 1140 and the second conductive type semiconductor layer 1120 may be formed by implanting impurities into an intrinsic or doped semiconductor substrate. Also, a region in which a p-n junction is formed by the impurity implantation may serve the same as the active layer 1130.
  • the enumerations of the first conductive semiconductor layer 1140, the second conductive semiconductor layer 1120, and the active layer 1130 are exemplary, and the present invention is not limited thereto.
  • the first conductive type semiconductor layer 1140, the active layer 1130, and the second conductive type semiconductor layer 1120 grown on the growth substrate 1110 are isolated from each other through an etching process.
  • a plurality of semiconductor light emitting devices are formed.
  • a plurality of semiconductor light emitting devices isolated from each other on the substrate by etching at least a portion of the first conductive type semiconductor layer 1140, the active layer 1130, and the second conductive type semiconductor layer 1120 To form.
  • the etching may be performed until the growth substrate 1110 is exposed.
  • etching may be performed between semiconductor light emitting devices until a part of the second conductive type semiconductor layer 1120 is left.
  • the etching may be performed by anisotropic etching using plasma or reactive ion gas, or a wet etching method of isotropically etching using a chemical agent.
  • the first conductive type electrode 1150 is formed on the isolated semiconductor light emitting devices. More specifically, the first conductive type electrode 1150 may be formed of a conductive electrode and a buffer electrode.
  • the first conductive type electrode 1150 may form a conductive electrode on one surface of the first conductive type semiconductor layer 1140, and sequentially form a buffer electrode on one surface of the conductive electrode.
  • the conductive electrode may be formed in electrical contact with the first conductive type semiconductor layer 1140 and may be formed of one or more metal layers.
  • the conductive electrode includes any one or more of ITO, chromium (Cr), titanium (Ti), and nickel-silver (Ni-Ag), and has ohmic contact characteristics with the first conductive type semiconductor layer 1140 You can also form a layer.
  • the conductive electrode may further include an oxidation preventing layer including at least one of gold (Au), silver (Ag), and platinum (Pt) to prevent oxidation of the first conductive electrode 1150.
  • an oxidation preventing layer including at least one of gold (Au), silver (Ag), and platinum (Pt) to prevent oxidation of the first conductive electrode 1150.
  • Au gold
  • Ag silver
  • Pt platinum
  • the buffer electrode is an electrode for improving adhesion between the conductive electrode and the insulating layer (passivation layer) to be described later, and may include at least one of titanium (Ti), chromium (Cr), and nickel (Ni).
  • Ti titanium
  • Cr chromium
  • Ni nickel
  • the enumeration of the buffer electrode is only exemplary, and the present invention is not limited thereto.
  • a second conductive type electrode 1160 is formed on the second conductive type semiconductor layer 1120.
  • the second conductive electrode 1160 may be formed of a conductive electrode and a buffer electrode.
  • the conductive electrode is formed in electrical contact with the second conductive semiconductor layer 1120 and may be formed of one or more metal layers.
  • the conductive electrode includes any one or more of ITO, chromium (Cr), titanium (Ti), and nickel-silver (Ni-Ag), and has ohmic contact characteristics with the second conductive semiconductor layer 1120 It may also include layers.
  • the conductive electrode may further include an oxidation preventing layer including at least one of gold (Au), silver (Ag), and platinum (Pt) to prevent oxidation of the second conductive electrode 1160.
  • an oxidation preventing layer including at least one of gold (Au), silver (Ag), and platinum (Pt) to prevent oxidation of the second conductive electrode 1160.
  • Au gold
  • Ag silver
  • Pt platinum
  • the buffer electrode is an electrode for improving adhesion between the conductive electrode and the insulating layer (passivation layer) to be described later, and may include at least one of titanium (Ti), chromium (Cr), and nickel (Ni).
  • Ti titanium
  • Cr chromium
  • Ni nickel
  • the enumeration of the buffer electrode is only exemplary, and the present invention is not limited thereto.
  • an insulating layer 1170 may be formed on the semiconductor light emitting device 1100 on which the first conductivity type electrode 1150 and the second conductivity type electrode 1160 are formed.
  • the insulating layer 1170 may have a shape surrounding at least one surface of the semiconductor light emitting device 1100. In addition, the insulating layer 1170 may have a shape surrounding a side surface of the isolated semiconductor light emitting device 1100.
  • the insulating layer 1170 may include a plurality of layers having different refractive indices to reflect light emitted to the side surface of the semiconductor light emitting device 1100.
  • a material having a relatively high refractive index and a material having a low refractive index may be repeatedly stacked.
  • FIG. 12 is a cross-sectional view illustrating a process of forming a member having thermal flow characteristics on a side surface of the semiconductor light emitting device of the present invention.
  • a material 1210 having thermal flow characteristics is applied on the top of the semiconductor light emitting device 1100 formed on the growth substrate 1110.
  • the component of the material 1210 may be a polymer-based component, and includes, for example, at least one of epoxy, acrylic, silicone, polyimide (PI), and benzocyclobutene (BCB).
  • PI polyimide
  • BCB benzocyclobutene
  • the components of the material 1210 may contain, for example, a binder and a monomer component that cause thermal flow properties in a material without thermal flow properties.
  • the viscosity of the material 1210 may be variously adjusted from several centi-poise (cp) to several hundred cp.
  • the thermal flow characteristics vary depending on the viscosity, but the influence of the viscosity may be attenuated by controlling the temperature and time in the reflow process. Accordingly, an embodiment of the present invention does not limit the viscosity of the material 1210 to a specific range.
  • the material 1210 may also be formed of an inorganic material such as silicon nitride (SiNx) or ITO (indium tin oxide).
  • SiNx silicon nitride
  • ITO indium tin oxide
  • a photo process and an etching process for forming a member 1220 made of the material are performed on at least one side of the semiconductor light emitting device, preferably on both sides.
  • the member may be first cured by UV (Ultra-Violet) curing or thermal curing. Therefore, in the step of separating the semiconductor light emitting device from the growth substrate, the member is separated from the growth substrate together with the semiconductor light emitting device.
  • UV Ultra-Violet
  • FIG. 12(b) shows the semiconductor light emitting device package 1200 in which the member 1220 is formed on both sides after an etching process.
  • the height or width of the member 1220 shown in FIG. 12 is formed in consideration of the assembly groove of the substrate.
  • the width of the semiconductor light emitting device 1100 is 50 ⁇ m and the width of the assembly groove of the substrate is 55 ⁇ m
  • the width of the member 1220 formed on both sides of the semiconductor light emitting device 1100 is It should be around 1 ⁇ m to 2 ⁇ m.
  • the shape of the member 1220 shown in FIG. 12 is only an example, and the present invention is not limited thereto.
  • the member 1220 serves as a guide so that the semiconductor light emitting device can be accurately assembled in the assembly groove in a reflow process.
  • Fig. 12(a) after applying the material 1210 having thermal flow characteristics, the process of forming the member 1220 of Fig. 12(b) is shown, but the growth substrate
  • LLO laser lift-off method
  • a region of the semiconductor light emitting device separated from the growth substrate is determined through a laser lift-off method (LLO), and the region generally includes a peripheral portion of the semiconductor light emitting device. Therefore, if the semiconductor light emitting device and its periphery can be separated from the growth substrate together, and a material having thermal flow characteristics is formed in the periphery of the semiconductor light emitting device, the material will naturally be separated from the semiconductor light emitting device without a separate photo and etching process. Can be separated together.
  • LLO laser lift-off method
  • FIG. 13 is a plan view illustrating a shape of the semiconductor light emitting device in which the member of FIG. 12 is formed when viewed from above.
  • FIG. 13(a) shows a shape in which a member 1221 surrounds the semiconductor light emitting device 1100 in a circular shape.
  • the semiconductor light emitting device 1100 is illustrated in a rectangular shape, but may be formed in various shapes such as a circle or a polygon.
  • 13(b) shows a shape in which a member 1223 surrounds the semiconductor light emitting device 1100 in a rectangle.
  • the shape of the member is illustrated as a circle and a rectangle, but the enumeration of the member is exemplary, and the present invention is not limited thereto.
  • FIGS. 14A are cross-sectional views illustrating a method of manufacturing a substrate having an assembly groove and an adhesive layer according to the present invention.
  • an assembly groove is formed to correspond to the shape of the semiconductor light emitting device to be assembled.
  • the assembly groove may be formed through a photo process and an etching process after forming the insulating layer 1420 on the substrate 1410.
  • the assembly groove is, for example, a region in which individual semiconductor light emitting devices are assembled and is a region defining a unit pixel in a display device.
  • the component of the insulating layer 1420 may be, for example, a nitride based insulating film (SiNx) or a silicon (SiO2) based component.
  • the width of the assembly groove may be formed within a range of several ⁇ m to 2 mm, and a depth of several hundred nm to 100 ⁇ m.
  • the depth of the assembly groove should be equal to or smaller than the height of the semiconductor light emitting device 1100 of FIG. 12(b) when assembled into a wiring board by, for example, a stamping process.
  • the stamp process it is a structure in which a semiconductor light emitting device protruding from a specific substrate and disposed to be engaged with an assembly groove of a wiring board by transfer between a substrate to a substrate. If the assembly groove of the wiring board is too deep, the semiconductor light emitting device This is because it is not smoothly assembled into the substrate.
  • the assembly groove has an opening and a bottom surface, and an area of the opening is formed to be wider than an area of the bottom surface.
  • the assembly groove may have a certain slope on the side surface. Accordingly, in the case of a semiconductor light emitting device that is incorrectly positioned on the side of the assembly groove during the assembly process, it moves to the bottom surface of the assembly groove along the side slope of the assembly groove through a reflow process.
  • the semiconductor light emitting device has an excellent tendency to move to the bottom surface of the assembly groove during the reflow process. It was confirmed experimentally.
  • a metal reflective layer may be formed under the assembly groove.
  • the metal reflective layer may include a plurality of layers having different refractive indices to reflect light emitted below the semiconductor light emitting device.
  • a material having a relatively high refractive index and a material having a low refractive index may be repeatedly stacked.
  • an adhesive layer 1430 is applied on the substrate.
  • the assembly groove 1440 on which the adhesive layer 1430 is applied is a region where the semiconductor light emitting device is assembled.
  • the inclined surface of the assembly groove may be changed flat, and the thickness of the adhesive layer 1430 is thinner than the thickness of the insulating layer 1420. Should. Accordingly, the thickness of the adhesive layer 1430 may be fluidly changed according to the thickness of the insulating layer 1420 so that the inclined surface of the assembly groove is exposed.
  • FIG. 14B is a plan view of the substrate manufactured by FIG. 14A viewed from above.
  • the assembly groove may be formed in various shapes.
  • FIG. 14B illustrates various assembly grooves 1441, 1443, and 1445 formed by forming an adhesive layer on a substrate and then etching, and other flat adhesive layer regions 1431, 1433, and 1435.
  • the assembly groove is listed in the shape of a circular assembly groove (1441), a square assembly groove (1443), and a rectangular assembly groove (1445), but the present invention is not limited thereto.
  • 15A is a cross-sectional view illustrating a process of manufacturing a substrate having an assembly groove and an adhesive layer formed thereon in a method different from that of FIG. 14A.
  • the assembly groove in order to form an assembly groove to correspond to the shape of the semiconductor light emitting device to be assembled, the assembly groove partially forms a partition wall 1520 on the substrate 1510, and thereafter, an adhesive layer 1530 is formed. It can be a method of application.
  • the component of the partition wall 1520 may be, for example, a nitride-based insulating film (SiNx) or a silicon (SiO2)-based component.
  • the width of the assembly groove formed by the partition wall may range from several ⁇ m to 2 mm, and the depth may range from several hundred nm to 100 ⁇ m.
  • the assembly groove 1540 formed by the partition wall 1520 may be designed to have the same structure as the assembly groove shown in FIG. 14, and a metal reflective film is provided under the assembly groove to increase the luminous efficiency of the semiconductor light emitting device. .
  • FIG. 15B is a plan view of the substrate fabricated by FIG. 15A viewed from above.
  • the assembly groove may be formed in various shapes.
  • 15B shows regions 1521, 1523, 1525 in which the adhesive layer protrudes by forming an adhesive layer on the upper part of the partition wall, and other flat adhesive layer regions 1531, 1533, 1535, and various assembly grooves formed by the partition walls. (1541, 1543, 1545) is shown.
  • the assembly groove is listed in the shape of a circular assembly groove 1541, a square assembly groove 1543, and a rectangular assembly groove 1545, but the present invention is not limited thereto.
  • 16 is a diagram illustrating a direction in which the semiconductor light emitting devices move during a reflow process after assembling the semiconductor light emitting devices on a substrate.
  • FIG. 12(b) As an example of the semiconductor light emitting device, as shown in FIG. 12(b), a semiconductor light emitting device package in which members having thermal flow characteristics are formed on both sides thereof is exemplified.
  • the semiconductor light emitting device package 1201 on the upper left side is located at the left boundary of the assembly groove 1441 formed on the adhesive layer 1431. Therefore, during the reflow process, the semiconductor light emitting device package 1201 moves to the right along the inclined surface of the assembly groove 1441 toward the bottom surface of the assembly groove.
  • the semiconductor light emitting device package 1203 located at the upper boundary of the assembly groove 1443 moves downward toward the bottom surface of the assembly groove during the reflow process, and other semiconductor light emission
  • the device packages 1204, 1205, and 1206 also move toward the bottom surfaces of the assembly grooves 1444, 1445, and 1446, respectively, according to the above-described embodiments and techniques of the present invention.
  • FIG. 17 are cross-sectional views of some of the semiconductor light emitting device packages shown in FIG. 16.
  • the semiconductor light emitting device package In order for the semiconductor light emitting device package to move to the bottom surface of the assembly groove in the reflow process, for example, the semiconductor light emitting device package must be located at an inclined portion of the assembly groove or an interface of the assembly groove.
  • FIG. 17(a) shows a semiconductor light emitting device package that is accurately positioned on the bottom surface of the assembly groove 1442 after the assembling process, after etching the substrate 1411 on which the insulating layer 1421 is applied to form an assembly groove 1442 It is a figure showing 1202. In this case, even if the reflow process is performed, the position of the semiconductor light emitting device package 1202 will not change much.
  • FIG. 18 is a diagram showing a principle in which a semiconductor light emitting device is self-aligned in an assembly groove through a reflow process.
  • a semiconductor light emitting device package 1200 in which members having thermal flow characteristics are formed on both sides thereof is exemplified.
  • the semiconductor light emitting device package 1200 in which a member having thermal flow characteristics is formed is positioned at the boundary of the assembly groove 1440. Due to the heat applied during the reflow process, the member and the adhesive layer 1430 have fluid behavioral properties, so that they can flow from a high place to a low place. Accordingly, the semiconductor light emitting device package 1200 located on the boundary surface is naturally moved to the bottom surface of the assembly groove 1440 and is self-aligned under the influence of gravity by the weight of the semiconductor light emitting device itself.
  • the component having the thermal flow characteristics and the components of the adhesive layer may be formed identically.
  • the member serves as a guide to help self-align to the assembly groove in the reflow process. Therefore, for example, if the component of the member and the adhesive layer are the same, the member generates the same fluid flow as the adhesive layer by heat generated in the reflow process, and accordingly, a guide that moves to the bottom surface of the assembly groove. You can perform the role more easily.
  • 18(b) is a diagram illustrating a semiconductor light emitting device package 1200 self-aligned at a central position of an assembly groove 1440 after a reflow process.
  • FIG. 18 a semiconductor light-emitting device package in which members are formed on both sides of the semiconductor light-emitting device is described as an example, but the member only provides a guide role for more easily performing self-alignment, Even in the case of a semiconductor light emitting device in which a member is not formed, it can be assembled at an exact position of the assembly groove through a reflow process according to the principle disclosed in FIG. 18.
  • 19 is an image obtained by observing a shape of an actual semiconductor light emitting device package assembled on a substrate having an assembly groove with an optical microscope.
  • the semiconductor light emitting device package was conventionally located on a donor substrate, and was assembled from a substrate having an assembly groove formed on the donor substrate through a stamp process.
  • the assembly grooves 1447 and 1449 were arbitrarily formed in two of the middle regions of the substrate in order to experimentally prove the effect of the present invention.
  • three semiconductor light emitting device packages are arranged in a straight vertical axis with respect to the E-E line and three in a straight vertical axis with respect to the F-F line.
  • the semiconductor light emitting device packages are not accurately assembled at the positions of the assembly grooves 1447 and 1449.
  • the semiconductor light emitting device packages 1207 and 1209 are located on the boundary between the assembly grooves 1447 and 1449.
  • another semiconductor light emitting device package 1208 is located on a flat adhesive layer 1432 without an assembly groove.
  • FIG. 20 is an image obtained by observing the degree of movement of the semiconductor light emitting device package of FIG. 19 after a reflow process with an optical microscope.
  • FIG. 20(a) is an optical image showing three semiconductor light emitting device packages formed along the E-E line of FIG. 19 after a reflow process.
  • FIG. 20(b) is an enlarged optical image of FIG. 20(a) to observe the distance the semiconductor light emitting device package 1207 has moved.
  • the semiconductor light emitting device package 1207 After the reflow process, a movement trace as much as X is observed based on the E-E line. As a result of optical observation, the X was confirmed to be about 10 ⁇ m.
  • the semiconductor light emitting device (or semiconductor light emitting device package) is placed in the correct position of the assembly groove. It is self-aligned so that the assembly error can be minimized.
  • the error has been avoided or overcome by an indirect method such as changing the design design of the subsequent wiring process to reduce the assembly error, and this method has caused problems such as an increase in manufacturing cost.
  • a semiconductor light emitting device is self-aligned in an assembly groove by using an adhesive layer having thermal flow characteristics, and the assembly error is minimized by an active and direct method.

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Abstract

La présente invention concerne un dispositif d'affichage utilisant une micro-DEL, dans lequel la micro-DEL est auto-alignée avec une position précise d'une rainure d'assemblage sur un substrat par l'intermédiaire d'un processus de refusion, ainsi que son procédé de fabrication. Un dispositif d'affichage selon un mode de réalisation de la présente invention comprend un substrat sur lequel est formée une rainure d'assemblage; une couche adhésive recouvrant la rainure d'assemblage et la périphérie de la rainure d'assemblage; et une DEL à assembler dans la rainure d'assemblage sur laquelle la couche adhésive est formée, la DEL ayant un élément présentant une caractéristique d'écoulement thermique sur au moins un côté et la rainure d'assemblage ayant une ouverture et une surface inférieure, la zone de l'ouverture étant plus grande que la zone de la surface inférieure.
PCT/KR2019/007092 2019-06-12 2019-06-12 Dispositif d'affichage utilisant une micro-del et son procédé de fabrication WO2020251076A1 (fr)

Priority Applications (2)

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EP19932425.2A EP3985732A4 (fr) 2019-06-12 2019-06-12 Dispositif d'affichage utilisant une micro-del et son procédé de fabrication
US17/616,553 US20220230997A1 (en) 2019-06-12 2019-06-12 Display device using micro led and manufacturing method therefor

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KR1020190069269A KR20190076929A (ko) 2019-06-12 2019-06-12 마이크로 led를 이용한 디스플레이 장치 및 이의 제조 방법
KR10-2019-0069269 2019-06-12

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Publication number Priority date Publication date Assignee Title
EP4092735A1 (fr) * 2021-05-21 2022-11-23 LG Electronics Inc. Appareil d'affichage
EP4170736A1 (fr) * 2021-10-22 2023-04-26 Samsung Electronics Co., Ltd. Dispositif électroluminescent et afficheur le comprenant

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