WO2019041814A1 - 测光模块、测光电路和电子设备 - Google Patents

测光模块、测光电路和电子设备 Download PDF

Info

Publication number
WO2019041814A1
WO2019041814A1 PCT/CN2018/082278 CN2018082278W WO2019041814A1 WO 2019041814 A1 WO2019041814 A1 WO 2019041814A1 CN 2018082278 W CN2018082278 W CN 2018082278W WO 2019041814 A1 WO2019041814 A1 WO 2019041814A1
Authority
WO
WIPO (PCT)
Prior art keywords
circuit
sub
output
transistor
reset
Prior art date
Application number
PCT/CN2018/082278
Other languages
English (en)
French (fr)
Inventor
王海生
丁小梁
郑智仁
韩艳玲
刘伟
张平
王鹏鹏
曹学友
贾亚楠
Original Assignee
京东方科技集团股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US16/315,561 priority Critical patent/US10935422B2/en
Publication of WO2019041814A1 publication Critical patent/WO2019041814A1/zh

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4228—Photometry, e.g. photographic exposure meter using electric radiation detectors arrangements with two or more detectors, e.g. for sensitivity compensation
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G5/00—Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators
    • G09G5/10—Intensity circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/444—Compensating; Calibrating, e.g. dark current, temperature drift, noise reduction or baseline correction; Adjusting
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2360/00—Aspects of the architecture of display systems
    • G09G2360/14—Detecting light within display terminals, e.g. using a single or a plurality of photosensors
    • G09G2360/144—Detecting light within display terminals, e.g. using a single or a plurality of photosensors the light being ambient light

Definitions

  • the present disclosure relates to the field of electronic devices, and in particular, to a photometric module, a photometric circuit, and an electronic device.
  • a photometric circuit through which the ambient light or the illumination light is detected, and then different responses are made according to the detected light intensity.
  • a photometric circuit is provided to detect the brightness of ambient light and adjust the display brightness according to the ambient light level for a better user experience.
  • An object of the present disclosure is to provide a photometry module, a photometric circuit, and an electronic device capable of accurately detecting the brightness of light.
  • a photometry module includes a detection sub-circuit, a comparison sub-circuit, and an occlusion layer, the occlusion layer includes at least one occlusion element, and the detection sub-circuit includes a first photosensitive An element, the detector circuit for outputting a detection signal according to illumination received by the first photosensitive element and an input signal via the detection sub-circuit; the contrast sub-circuit comprising a second photosensitive element, in the occlusion layer At least one shielding element covering at least the second photosensitive element, the contrast sub-circuit for outputting a contrast signal according to an input signal of the contrast sub-circuit; wherein the first photosensitive element and the second photosensitive element structure The same is the same as the first photosensitive element and the second photosensitive element are identical in response to illumination, and the first photosensitive element and the second photosensitive element are identical in response to the environment.
  • an input end of the first photosensitive element is electrically connected to an input end of the detecting sub-circuit, and an input end of the detecting sub-circuit is configured to receive an input signal of the detecting sub-circuit from the outside when the When the control end of the detecting sub-circuit receives the first control signal, the output end of the first photosensitive element is electrically connected to the output end of the detecting sub-circuit; the input end of the second photo-sensitive element and the comparison sub-circuit The input end is electrically connected, the input end of the comparison sub-circuit is configured to receive an input signal of the comparison sub-circuit from the outside, and when the control end of the comparison sub-circuit receives the first control signal, the second photosensitive The output of the component is conductive to the output of the comparator circuit.
  • the detecting sub-circuit further includes a first switching element, a control end of the first switching element serving as a control end of the detecting sub-circuit, an input end of the first switching element and the first photosensitive An output end of the element is connected, an output end of the first switching element serving as an output end of the detecting sub-circuit, the first switching element being configured to receive a first control signal when a control end of the first switching element receives The input end and the output end of the first switching element are turned on.
  • the first switching element includes a first switching transistor, a gate of the first switching transistor serves as a control end of the first switching element, and a first pole of the first switching transistor serves as the first An input end of a switching element, a second pole of the first switching transistor serving as an output end of the first switching element.
  • the shielding layer comprises a plurality of the shielding elements, and at least one of the shielding elements covers the first switching element.
  • the comparison sub-circuit further includes a second switching element, a control end of the second switching element serves as a control end of the comparison sub-circuit, an input end of the second switching element and the second photosensitive An output end of the component is connected, an output end of the second switching element is an output end of the detecting sub-circuit, and the second switching element is configured to receive a first control signal when a control end of the second switching element receives The input end and the output end of the second switching element are turned on.
  • the second switching element includes a second switching transistor, a gate of the second switching transistor serves as a control end of the second switching element, and a first pole of the second switching transistor serves as the first An input end of the second switching element, and a second end of the second switching transistor serves as an output end of the second switching element.
  • the shielding layer comprises a plurality of the shielding elements, and at least one of the shielding elements covers the second switching element.
  • control end of the detecting sub-circuit is electrically connected to the control end of the comparison sub-circuit.
  • the first photosensitive element comprises a first photo transistor, a gate of the first photo transistor is connected to a constant voltage source, and a first pole of the first photo transistor is used as an input of the first photosensor a second pole of the first phototransistor as an output of the first photosensor, the first phototransistor configured to receive a constant voltage of the constant voltage source input when a gate of the first photo transistor a first pole of the first photo transistor and a second pole of the first photo transistor are turned on;
  • the second photosensor includes a second photo transistor, a gate of the second photosensor and a constant voltage source Connected, a first pole of the second phototransistor serves as an input of the second photosensor, and a second pole of the second phototransistor serves as an output of the second photosensor, the second phototransistor Configuring a first pole of the second photo transistor and a second of the second photo transistor when a gate of the second photo transistor receives a constant voltage of the constant voltage source input Turned on.
  • the first photosensitive element comprises a first photo transistor and a first auxiliary photodiode, a gate of the first photo transistor is connected to a constant voltage source, a first pole of the first photo transistor and the first a cathode of the first auxiliary photodiode is connected, a second pole of the first phototransistor serves as an output of the first photosensor, and the first phototransistor is configured to receive a gate of the first phototransistor a constant voltage input by the constant voltage source, a first pole of the first photo transistor and a second pole of the first photo transistor are turned on, and an anode of the first auxiliary photodiode serves as the first photosensor An input terminal; the second photosensitive element includes a second photo transistor and a second auxiliary photodiode, a gate of the second photosensor is connected to the constant voltage source, and a first pole of the second photo transistor a cathode of the second auxiliary photodiode is connected, a second pole of the second photo transistor is used as
  • a photometric circuit including at least one photometric module, wherein the photometric module is the aforementioned photometric module, and the photometric circuit includes a first output end and a second output end, according to the first output end.
  • the output signal of the detection sub-circuit outputs a first output signal, and the second output signal is output from the second output according to an output signal of the comparison sub-circuit.
  • the photometric circuit further includes a reset sub-circuit, an input end of the reset sub-circuit is connected to a reset signal end of the photometric circuit, and the reset signal end is used to provide a reset voltage, the reset sub- a first output of the circuit is coupled to an output of the detector circuit, a second output of the reset subcircuit is coupled to an output of the comparator circuit, and the reset subcircuit is configured to be in the reset subcircuit Receiving, by the control terminal, the input end of the reset sub-circuit and the first output end and the second output end of the reset sub-circuit when the first reset signal is received, so that the first output end of the reset sub-circuit And the second output is reset to the reset voltage.
  • a reset sub-circuit an input end of the reset sub-circuit is connected to a reset signal end of the photometric circuit, and the reset signal end is used to provide a reset voltage
  • the reset sub- a first output of the circuit is coupled to an output of the detector circuit
  • the reset sub-circuit includes a first reset transistor and a second reset transistor, a first pole of the first reset transistor is connected to an input end of the reset sub-circuit, and a gate of the first reset transistor Connected to the control terminal of the reset sub-circuit, the second electrode of the first reset transistor is connected as a first output end of the reset sub-circuit to an output end of the detecting sub-circuit, the first reset transistor
  • the gate receives the first reset signal
  • the first pole of the first reset transistor and the second pole of the first reset transistor are turned on;
  • the first pole of the second reset transistor and the reset sub-circuit The input terminal is connected
  • the gate of the second reset transistor is connected to the control terminal of the reset sub-circuit, and the second pole of the second reset transistor is used as the second output terminal of the reset sub-circuit and the comparator
  • the output ends of the circuits are connected.
  • the gate of the second reset transistor receives the first reset signal
  • the photometric circuit further includes a first regulated output sub-circuit and a second regulated output sub-circuit; wherein the first regulated output sub-circuit is configured to stabilize an output signal of the detecting sub-circuit The first output signal is output, and the second regulated output sub-circuit is configured to stabilize an output signal of the comparison sub-circuit to output the second output signal.
  • the first regulated output sub-circuit includes a first voltage stabilizing transistor and a first output transistor, and a gate of the first voltage stabilizing transistor is connected to an output end of the detecting sub-circuit, the first The first pole of the voltage stabilizing transistor is connected to the first level signal end, the second pole of the first voltage stabilizing transistor is connected to the first pole of the first output transistor, and the second pole of the first output transistor Connected to the first output end of the photometric circuit;
  • the second regulated output sub-circuit includes a second voltage stabilizing transistor and a second output transistor, a gate of the second voltage stabilizing transistor and the comparison sub-circuit Connected to the output terminal, the first pole of the second voltage stabilizing transistor is connected to the first level signal end, and the second pole of the second voltage stabilizing transistor is connected to the first pole of the second output transistor,
  • the second electrode of the second output transistor is connected to the second output end of the photometric circuit, and the gate of the first output transistor is connected to the gate of the second output transistor.
  • At least one of the blocking elements covers the reset sub-circuit.
  • At least one of the shielding elements covers the first regulated output sub-circuit, and at least one of the blocking elements covers the second regulated output sub-circuit.
  • An electronic device includes a photometric circuit, the photometric circuit is the aforementioned photometric circuit, and the electronic device further includes a brightness calculation sub-circuit, and the first input end of the brightness calculation sub-circuit is An output end of the detection sub-circuit is connected, a second input end of the brightness calculation sub-circuit is connected to an output end of the comparison sub-circuit, and the brightness calculation sub-circuit can be based on an output signal of the detection sub-circuit The output signal of the comparison sub-circuit determines the intensity of the illumination received by the detection sub-circuit.
  • a working method of a photometric circuit includes a photometric module, the photometric module includes a detection sub-circuit, a comparison sub-circuit, and an occlusion layer, the occlusion layer includes at least one occlusion element, and the detection
  • the sub-circuit includes a first photosensitive element for outputting a detection signal according to illumination received by the first photosensitive element and an input signal via the detection sub-circuit; the contrast sub-circuit comprising a second photosensitive element At least one of the shielding elements covers at least the second photosensitive element, and the contrast sub-circuit is configured to output a contrast signal according to an input signal of the contrast sub-circuit; the first photosensitive element and the first
  • the two photosensitive elements are identical in structure such that the first photosensitive element and the second photosensitive element are identical in response to illumination, and the first photosensitive element and the second photosensitive element are identical in response to the environment, the method comprising resetting a sub-phase and a acquisition sub-phase, in which the constant voltage source supplies
  • the reset sub-phase includes a first reset sub-phase and a second reset sub-phase, in the first reset sub-phase, a constant voltage source is input to the input of the detecting sub-circuit and the comparison sub-circuit The control terminal provides a first level signal; in the second reset sub-phase, the constant voltage source provides a second level signal to the input of the detection sub-circuit and the control terminal of the comparison sub-circuit.
  • the first level signal is a high level signal
  • the second control signal is a low level signal
  • FIG. 1A is a functional block diagram of a photometric circuit provided by the present disclosure
  • FIG. 1B is a schematic diagram of a first embodiment of a photometric circuit provided by the present disclosure
  • FIG. 2 is a schematic diagram of a second embodiment of a photometric circuit provided by the present disclosure.
  • FIG. 3 is a schematic diagram of a third embodiment of the photometric circuit provided by the present disclosure.
  • FIG. 4 is a signal timing diagram of driving a photometric circuit.
  • a photometric module is provided, wherein, as shown in FIG. 1A, the photometric module includes a detection sub-circuit 110, a comparison sub-circuit 120, and an occlusion layer, and the occlusion layer includes at least one occlusion element. 121.
  • the detecting sub-circuit 110 includes a first photosensitive element 110 for outputting a detection signal based on the illumination received by the first photosensitive element and the input signal of the detection sub-circuit 110.
  • the contrast sub-circuit 120 includes a second photosensitive element, at least one of the shielding elements 121 covering at least the second photosensitive element to prevent light from illuminating the photosensitive portion of the second photosensitive element. And, the comparison sub-circuit 120 is configured to output a comparison signal according to an input signal of the comparison sub-circuit.
  • first photosensitive element and the second photosensitive element structure may be the same.
  • photosensitive elements include, but are not limited to, photodiodes, phototransistors, photosensitive thin film transistors, photoresistors, and the like.
  • the same response of the first photosensitive element and the second photosensitive element to illumination means that when the same amount of light is irradiated onto the first photosensitive element and the second photosensitive element and other external conditions are the same, the first photosensitive element is caused by the light.
  • the change in electrical characteristics is the same as the change in electrical characteristics of the second photosensitive element due to the light.
  • the same response of the first photosensitive element and the second photosensitive element to the environment means that, in the absence of illumination, the first photosensitive element is exposed to environmental conditions (eg, temperature, humidity, parasitic capacitance, electric field generated by other conductive members, and its own leakage current).
  • environmental conditions eg, temperature, humidity, parasitic capacitance, electric field generated by other conductive members, and its own leakage current.
  • the change in electrical characteristics caused by the same is the same as the change in electrical characteristics of the second photosensitive element due to the same environmental conditions.
  • the change in electrical characteristics may refer to a change in current or voltage generated by the photosensitive member, and the change in electrical characteristics when the photosensitive member is a photoresistor. It can refer to the change in the resistance of the photoresistor.
  • the first photosensitive element in the absence of illumination, such as a voltage difference between the input and output of the first photosensitive element, the first photosensitive element can be turned on, so that the detection sub-circuit 110 has a signal output.
  • the output signal for example, voltage value or current value
  • the output state of the first photosensitive element is also affected by other factors in the environment in which the first photosensitive element is placed. For example, it is affected by an electric field generated by other conductive elements, the influence of leakage current of the first photosensitive element, and the like.
  • the structure of the second photosensitive element is the same as the structure of the first photosensitive element, and therefore, the second photosensitive element has the same reaction as the first photosensitive element in response to illumination,
  • the response of the two photosensitive elements to other environmental factors is also the same as the response of the first photosensitive elements to other environmental factors.
  • the environment in which the first photosensitive element is located is different from the environment in which the second photosensitive element is located only in that the first photosensitive element is illuminated, and the second photosensitive element is The occlusion element is not exposed to light under occlusion.
  • the signal outputted by the detecting sub-circuit 110 is affected by other environmental factors (for example, parasitic capacitance, electric field generated by other conductive parts, and self-leakage).
  • the current is equal to the influence, and the signal output by the comparison sub-circuit 120 is only affected by other environmental factors (for example, parasitic capacitance, an electric field generated by other conductive members, and its own leakage current). Therefore, comparing the signal outputted by the detecting sub-circuit 110 with the signal output by the comparison sub-circuit 120 can offset the influence of other environmental factors on the light intensity detection result, and obtain an accurate detection result.
  • the detection sub-circuit 110 outputs a voltage of V2 when the input voltage is V1 and the illumination intensity is A.
  • the output voltage V2 includes the effects of illumination and other environmental factors on the output voltage.
  • the voltage output by the comparison sub-circuit 120 in the case where the input voltage is V1 is V3, and the output voltage V3 includes only the influence of other environmental factors on the output voltage. Then, the change of the illumination to the output voltage of the detecting sub-circuit 110 is V2-V3.
  • the light intensity can be calculated from the amount of voltage change.
  • the input voltage is supplied to the input of the detection sub-circuit 110 and the comparison sub-circuit 120 using the input signal terminal VD.
  • the occlusion layer may be formed synchronously when forming a black matrix of the display device. That is, the material of the occlusion layer is the same as the material of the black matrix.
  • the input end of the first photosensitive element is electrically connected to the input end of the detecting sub-circuit 110, and when the control end of the detecting sub-circuit 110 receives the first control signal, the first The output of the photosensitive element is electrically coupled to the output of the detector circuit 110.
  • the input end of the second photosensitive element is electrically connected to the input end of the comparison sub-circuit 120, and when the control end of the comparison sub-circuit 120 receives the first control signal, the output end of the second photosensitive element The output of the comparison sub-circuit 120 is turned on.
  • the conduction state between the input end of the first photosensitive element and the output end of the detecting sub-circuit in which the first photosensitive element is located may be controlled by the first control signal.
  • the user or the operator can provide the first control signal to the control terminal of the detecting sub-circuit 110 when the light intensity needs to be detected, and provide the second control to the control terminal of the detecting sub-circuit 110 without detecting the light intensity.
  • the signal (when the control terminal of the detecting sub-circuit 110 receives the second control signal, the output end of the first photosensitive element is disconnected from the output end of the detecting sub-circuit 110), it can be seen that the detecting sub-circuit 110 does not always output a signal. Thereby, the energy consumption is reduced and the life of each component in the detecting sub-circuit 110 is prolonged.
  • One of the first control signal and the second control signal is a high level signal and the other is a low level signal.
  • the control terminal of the comparison sub-circuit 120 receives the second control signal, the output of the second photosensor is disconnected from the output of the comparison sub-circuit 110.
  • the contrast sub-circuit 120 turns on the output of the second photosensor and the output of the comparison sub-circuit 120 only when the user or the operator needs to detect the light intensity, thereby reducing power consumption and extending the contrast sub-circuit The service life of each component in 120.
  • the specific structure of the detecting sub-circuit 110 is not particularly limited.
  • the detecting sub-circuit 110 further includes a first switching element, and the control end of the first switching element is controlled by the detecting sub-circuit 110.
  • An input end of the first switching element is connected to an output end of the first photosensitive element, and an output end of the first switching element serves as an output end of the detecting sub-circuit, and the first switching element can be The control terminal of the first switching element turns on the input end and the output end of the first switching element when receiving the first control signal.
  • the purpose of providing the first switching element is to ensure that an electrical signal is provided to the input of the first photosensitive element only at the moment when the detection of the light is required, and not to the input of the first photosensitive element at the moment when the detection of the light is not required.
  • the electrical signal can reduce the working time of the first photosensitive element and prolong the service life of the first photosensitive element.
  • the first switching element includes a first switching transistor T2, and the gate of the first switching transistor T2 serves as a control end of the first switching element, and the first switch A first pole of the transistor T2 serves as an input of the first switching element, and a second pole of the first switching transistor T2 serves as an output of the first switching element.
  • the first switching transistor T2 has a layered structure, and the first switching transistor T2 can be formed by a patterning process.
  • the photometry module provided by the present disclosure can be applied to a display device, and therefore, the first switching transistor T2 can be formed at the time of manufacturing the pixel circuit forming the display device, so that the overall manufacturing process of the display device can be simplified.
  • the occlusion layer includes a plurality of occlusion elements.
  • the occlusion layer includes a occlusion element 111 and a occlusion element 121.
  • the blocking element 111 in the occlusion layer covers the first switching transistor T2. Covering the first switching transistor T2 by the shielding element 111 can also prevent the first switching transistor T2 from aging, thereby improving the signal-to-noise ratio of the detection result and extending the service life of the first switching transistor T2.
  • the first switching transistor T2 is an N-type transistor
  • the first of the first switching transistor T2 is the source of the first switching transistor T2
  • the first switching transistor T2 The second is the drain of the first switching transistor T2.
  • the comparison sub-circuit 120 further includes a second switching element, the control end of the second switching element serving as a control end of the comparison sub-circuit, the input end of the second switching element and the second photosensitive element An output end is connected, an output end of the second switching element is an output end of the detecting sub-circuit, and the second switching element is capable of the second control element receiving a first control signal when the control end of the second switching element The input end of the switching element is electrically connected to the output end.
  • the provision of the second switching element in the comparison sub-circuit 120 ensures that an electrical signal is supplied to the input of the second photosensitive element only at the moment when the detection of the light is required, The time at which the light needs to be detected does not provide an electrical signal to the input of the second photosensitive element, thereby reducing the operating time of the second photosensitive element and extending the useful life of the second photosensitive element.
  • the second switching element includes a second switching transistor T3, the gate of the second switching transistor T3 serves as a control terminal of the second switching element, and a second A first pole of the switching transistor T3 serves as an input of the second switching element, and a second pole of the second switching transistor T3 serves as an output of the second switching element.
  • the advantage of the second switching element comprising the second switching transistor T3 is similar to that of the first switching element comprising the first switching transistor T2, the second switching transistor T3 being of a layered structure, which can be formed by a patterning process.
  • the photometry module provided by the present disclosure can be applied to a display device, and therefore, the second switching transistor T3 can be formed at the time of manufacturing the pixel circuit forming the display device, so that the overall manufacturing process of the display device can be simplified.
  • the occlusion layer can include a plurality of occlusion elements.
  • at least one of the shielding elements 121 in the shielding layer optionally covers the second switching transistor T3.
  • the second switching transistor T3 is an N-type transistor
  • the first of the second switching transistor T3 is the source of the second switching transistor T3
  • the second switching transistor T3 is The second is the drain of the second switching transistor T3.
  • Covering the second switching transistor T3 with the shielding element 121 can also prevent the second switching transistor T3 from aging, thereby improving the signal-to-noise ratio of the detection result and extending the service life of the second switching transistor T3.
  • control end of the detection sub-circuit 110 is electrically connected to the control end of the comparison sub-circuit 120.
  • the detection sub-circuit 110 and the comparison sub-circuit 120 can realize a synchronous output, thereby facilitating control of the conduction states of the detection sub-circuit 110 and the comparison sub-circuit 120, and facilitating calculation of the detection result.
  • the specific structures of the first photosensitive member and the second photosensitive member are not particularly limited.
  • the first photosensitive element and the second photosensitive element may both be photosensitive thin film transistors.
  • the first photosensitive element and the second photosensitive element may both be photodiodes or phototransistors.
  • the first photosensitive element includes a first photo transistor T1, and correspondingly, a gate of the first photo transistor T1 is connected to a constant voltage input terminal, and the first photo transistor T1
  • the first pole of the first photosensor is the input end of the first photosensor
  • the second pole of the first photo transistor T1 serves as the output of the first photosensor.
  • the gate of the first photo transistor T1 receives a constant voltage input from a constant voltage source
  • the first electrode of the first photo transistor T1 and the second electrode of the first photo transistor T1 are turned on.
  • the type of signal input to the constant voltage source is not specifically defined.
  • the first photo transistor T1 is an N-type transistor, the signal input by the constant voltage source is a high level signal, and when the first photo transistor T1 is a P-type transistor, the signal input by the constant voltage source is a low level signal.
  • the structure of the first photosensitive element is the same as that of the second photosensitive element, and therefore, the second photosensitive element includes a second photo transistor T4, and the gate of the second photo transistor T4 is connected to the constant voltage source.
  • the first photo of the second photo transistor T4 serves as an input of the second photosensor, and the second electrode of the second photo transistor T4 serves as an output of the second photosensor.
  • the gate of the second photo transistor T4 receives the constant voltage input from the constant voltage source, the first electrode of the second photo transistor T4 and the second electrode of the second photo transistor T4 are turned on.
  • both the first photo transistor T1 and the second photo transistor T4 are in an on state.
  • the first photo transistor T1 is capable of receiving illumination, and the second photo transistor T4 does not receive illumination due to the action of the occlusion element.
  • the first photosensitive element comprises a first photo transistor T1 and a first auxiliary photodiode D1.
  • the gate of the first photo transistor T1 is connected to a constant voltage source
  • the first electrode of the first photo transistor T1 is connected to the cathode of the first auxiliary photodiode D1
  • the second electrode of the first photo transistor T1 serves as the first photosensor The output.
  • the gate of the first photo transistor T1 receives a constant voltage input from a constant voltage source
  • the first electrode of the first photo transistor T1 and the second electrode of the first photo transistor T1 are turned on.
  • the anode of the first auxiliary photodiode D1 serves as an input end of the first photosensitive element.
  • the input of the first photosensitive element is used to input a high level signal, and therefore, the first auxiliary photodiode is always in an on state.
  • the second photosensitive element includes a second photo transistor T4 and a second auxiliary photodiode D2.
  • the gate of the second photosensor T4 is connected to a constant voltage source
  • the first pole of the second photo transistor T4 is connected to the cathode of the second auxiliary photodiode D2
  • the second pole of the second photo transistor T4 is used as the second photosensor The output.
  • the gate of the second photo transistor T4 receives the constant voltage input from the constant voltage input terminal
  • the first electrode of the second photo transistor T4 and the second electrode of the second photo transistor T4 are turned on.
  • the anode of the second auxiliary photodiode D2 serves as an input end of the second photosensitive element.
  • the blocking element 121 in the shielding layer can cover the second photo transistor T4 and the second auxiliary photodiode D2.
  • Setting the first auxiliary photodiode D1 can increase the amount of signal changed by illumination, thereby improving the accuracy of the detection result.
  • a photometric circuit comprising at least one photometric module, wherein the photometric module is provided by the present disclosure as shown in FIGS. 1B to 3
  • the above photometric module includes a first output terminal Vout1 for outputting a first output signal according to a signal outputted from an output end of the detection sub-circuit 110, and a second output terminal Vout2 for outputting a second output terminal Vout2 for The signal output from the output of the comparison sub-circuit 120 outputs a second output signal.
  • the photometric circuit can be placed in any electronic device that requires metering.
  • a photometric circuit can be placed in the display device to detect ambient light brightness.
  • the display device can adjust the display brightness according to the ambient light level. As described above, since the contrast sub-circuit is provided in the photometric module, when the brightness is calculated, the influence of other environmental factors can be excluded, thereby improving the detection accuracy.
  • the photometric circuit further includes a reset sub-circuit 130.
  • the input end of the reset sub-circuit 130 is connected to the reset signal terminal Vrst, and the first output end of the reset sub-circuit 130 and the detection sub-circuit
  • the output terminal of the reset sub-circuit 130 is connected to the output end of the comparison sub-circuit 120.
  • the reset sub-circuit 130 can reset the sub-circuit when the control terminal of the reset sub-circuit 130 receives the first reset signal.
  • the input of 130 is coupled to the output of reset subcircuit 130.
  • the control terminal of the reset sub-circuit 130 When the control terminal of the reset sub-circuit 130 receives the second reset signal, the input terminal and the output terminal of the reset sub-circuit 130 are disconnected.
  • one of the first reset signal and the second reset signal is a high level signal, and the other is a low level signal.
  • the output end of the detecting sub-circuit 110 of the photometric module and the output end of the comparison sub-circuit 120 are reset, thereby eliminating the influence of residual charges and improving the detection accuracy.
  • the reset signal input by the reset signal terminal Vrst may be a low-level signal. Therefore, after the end of the acquisition phase, the potential at the output of the detection sub-circuit 110 and the potential at the output of the comparison sub-circuit 120 are both high, so in the reset phase, the input terminal of the reset sub-circuit 130 and the reset sub-circuit are The output terminal of 130 is turned on, and the output terminal of the detecting sub-circuit 110 at the high level potential and the output terminal of the comparison sub-circuit 120 can be pulled down to the low-level potential provided by the reset signal terminal Vrst.
  • the specific structure of the reset sub-circuit 130 is not particularly limited.
  • the reset sub-circuit 130 includes a first reset transistor T5 and a second reset transistor T6.
  • the first pole of the first reset transistor T5 is connected to the input terminal of the reset sub-circuit 130, and the gate of the first reset transistor T5 is connected to the control terminal of the reset sub-circuit 130, the first reset.
  • the second pole of transistor T5 is coupled to the output of detector sub-circuit 110.
  • the first pole of the second reset transistor T6 is connected to the input terminal of the reset sub-circuit 130, the gate of the second reset transistor T6 is connected to the control terminal of the reset sub-circuit 130, and the second pole of the second reset transistor T6 is connected to the comparison sub-circuit The outputs of 120 are connected.
  • the gate of the second reset transistor T6 receives the first reset signal, the first pole of the second reset transistor T6 and the second pole of the second reset transistor T6 are turned on, and the gate of the second reset transistor T6 is received.
  • the second reset signal is issued, the first pole of the second reset transistor T6 and the second pole of the second reset transistor T6 are disconnected.
  • the first reset transistor T5 and the second reset transistor T6 are provided with blocking elements.
  • the detection sub-circuit 110 and the comparison sub-circuit 120 are synchronously controlled. Therefore, when the detection sub-circuit 110 and the comparison sub-circuit 120 are reset, the detection sub-circuit 110 and the comparison sub-circuit 120 are both Inactive. When the control terminal of the reset sub-circuit 130 receives the first reset signal, the reset sub-circuit 130 simultaneously resets the output of the detection sub-circuit 110 and the output of the comparison sub-circuit 120.
  • the photometric circuit further includes a first regulated output sub-circuit 140 and a second regulated output sub-circuit 150.
  • the first regulated output sub-circuit 140 and the second regulated output sub-circuit 150 are configured to stably transmit signals to subsequent circuits, wherein the first regulated output sub-circuit 140 is configured to stabilize the output signal of the detecting sub-circuit 110 to generate a first An output signal, the second regulated output sub-circuit 150 is used to stabilize the output signal of the comparison sub-circuit 120 to generate a second output signal.
  • the first regulated output sub-circuit 140 includes a first voltage stabilizing transistor T7 and a first output transistor T9.
  • the gate of the first voltage stabilizing transistor T7 is connected to the output end of the detecting sub-circuit 110, and the first pole of the first voltage stabilizing transistor T7 is connected to the first level signal terminal V0.
  • the second pole of the first voltage stabilizing transistor T7 is connected to the first pole of the first output transistor T9, and the second pole of the first output transistor T9 is connected to the first output end of the photometric circuit.
  • the second regulated output sub-circuit 150 includes a second voltage stabilizing transistor T8 and a second output transistor T10.
  • the gate of the second voltage stabilizing transistor T8 is connected to the output end of the comparison sub-circuit 120, and the first pole of the second voltage stabilizing transistor T8 is connected to the first level signal terminal V0.
  • the second pole of the second voltage stabilizing transistor T8 is connected to the first pole of the second output transistor T10, and the second pole of the second output transistor T10 is connected to the second output end of the photometric circuit, the first output transistor T9
  • the gate is connected to the gate of the second output transistor T10.
  • the first voltage stabilizing transistor T7 and the second voltage stabilizing transistor T8 function to follow the voltage regulation.
  • the output voltage of the first regulator transistor T7 changes as the gate voltage of the first regulator transistor T7 changes, and the voltage signal output from the first regulator transistor T7 is more stable.
  • the gate of the first output transistor T9 receives the signal that the first output transistor T9 is turned on, the first pole and the second pole of the first output transistor T9 are turned on, and will be regulated by the first regulator transistor T7.
  • the subsequent voltage ie, the first output signal
  • the output voltage of the second regulator transistor T8 changes as the gate voltage of the second regulator transistor T8 changes.
  • the gate of the second output transistor T10 receives the signal that the second output transistor T10 is turned on, the first and second poles of the second output transistor T10 are turned on, and will be regulated by the second regulator transistor T8.
  • the subsequent voltage ie, the second output signal
  • the first voltage stabilizing transistor T7, the second voltage stabilizing transistor T8, the first output transistor T9, and the second output transistor T10 may each be covered by the blocking element.
  • the first voltage stabilizing transistor T7 and the second voltage stabilizing transistor T8 are both N-type transistors, and the first level signal input by the first level signal terminal V0 is high. Level signal.
  • the first voltage stabilizing transistor T7 and the second voltage stabilizing transistor T8 are P-type transistors, the first level signal input by the first level signal terminal is a low level signal.
  • the first level signal terminal V0 can be connected to a direct current power source.
  • one of the photometric circuits includes A metering module.
  • the photometric circuit may further include a plurality of photometric modules.
  • the plurality of photometric modules are arranged in a plurality of rows.
  • the photometric circuit includes four photometric modules arranged in four rows.
  • the first photosensitive element includes a first photo transistor T1
  • the second photosensitive element includes a second photo transistor T4
  • the gate of the first photo transistor T1 and the gate of the second photo transistor T4 are both first
  • the detection gate line Gate1 is connected, and the control terminal of the detection sub-circuit 110 and the control terminal of the comparison sub-circuit 120 are connected to the second detection gate line Gate2.
  • the control terminal of the reset sub-circuit of the photometric circuit is connected to the reset gate line Gate 3, and the control terminal of the first regulated output sub-circuit 140 and the control terminal of the second regulated output sub-circuit 150 are connected to the output gate line Gate4.
  • all of the thin film transistors are N-type transistors that are turned on and off at a high level.
  • the first electrode of the first photo transistor T1 is connected to the input signal terminal VD, and the input signal terminal VD provides an input signal to the detecting sub-circuit 110.
  • the first electrode of the second photo transistor T4 is connected to the input signal terminal VD, and the input signal terminal VD provides an input signal to the comparison sub-circuit 120.
  • one working phase includes two sub-phases: a reset sub-phase t1 and a collection sub-phase t2.
  • the constant voltage supplied to the first detection gate line Gate1 may be a high level voltage.
  • the high-level voltage supplied to the first detection gate line Gate1 is a voltage that optimizes the optical characteristics of the first photo transistor T1 and the second photo transistor T4.
  • the reset sub-phase includes a first reset sub-phase t11 and a second reset sub-phase t12.
  • the first level signal is supplied to the second detection gate line Gate2, and the photo transistor T1, the first control transistor T2, the second control transistor T3, and the photo transistor T4 are turned on.
  • the first reset transistor T5 and the second reset transistor T6 are both turned on, so that the charge accumulated in the previous duty cycle of the detecting sub-circuit 110 can be placed at the output end of the detecting sub-circuit 110, and the upper side of the comparing sub-circuit 120 The charge accumulated during one duty cycle is placed at the output of the comparison sub-circuit 120.
  • the first level signal is a high level signal.
  • the second detection gate line Gate2 is supplied with the second level signal, and the photo transistor T1, the first control transistor T2, the second control transistor T3, and the photo transistor T4 are all turned off, and the first reset transistor T5 and The second reset transistor T6 is both turned on, so that the output terminal of the detecting sub-circuit 110 and the output terminal of the comparison sub-circuit 120 can be pulled down to the reset voltage input by the reset signal terminal Vrst.
  • the second level signal is a low level signal that is opposite to the first level signal.
  • a low-level signal is supplied to the reset gate line Gate3, a high-level signal is supplied to the first detection gate line Gate1, a high-level signal is supplied to the second detection gate line Gate2, and the output gate line Gate4 is provided with a high level. Level signal.
  • the photo transistor T1, the first control transistor T2, the second control transistor T3, the photo transistor T4, the first voltage stabilizing transistor T7, the first output transistor T9, the second voltage stabilizing transistor T8, and the second output transistor T10 is all turned on.
  • the influence of the illumination on the output of the detecting sub-circuit 110 can be obtained from the value obtained by subtracting the signal Vout1 output from the first output transistor T9 and the signal Vout2 output from the second output transistor T10.
  • the light intensity value can be obtained by converting the relationship between light and electric signals.
  • an electronic device including a photometric circuit, wherein the photometric circuit is the photometric circuit provided by the present disclosure, and the electronic device further includes a brightness calculation a sub-circuit, a first input end of the brightness calculation sub-circuit is connected to a first output end of the detection circuit, and a second input end of the brightness calculation sub-circuit is connected to a second output end of the detection circuit
  • the brightness calculation sub-circuit is capable of determining the intensity of the illumination received by the detection sub-circuit based on a signal output from the first output of the detection circuit and a signal output from the second output of the detection circuit.
  • the photometric circuit can eliminate the influence of leakage current and other environmental factors when detecting the intensity of the optical signal, thereby having high detection accuracy.
  • the electronic device may be a display device including a display panel.
  • the electronic device further includes a brightness adjustment module, the light metering circuit is disposed on the display panel, and the brightness adjustment module is capable of adjusting display brightness of the display panel according to an ambient brightness determined by the brightness calculation module .
  • the photometric circuit can be formed at the time of forming a pixel circuit in a display panel, so that integration of an electronic device can be improved.
  • the photometric circuit can be disposed in a non-display area of the display panel.
  • a photometric circuit can be integrated on a chip, and then the chip is electrically connected to the display panel.
  • the electronic device may be an electronic device such as a mobile phone, a tablet computer, a television, an electronic paper reader, a GPS navigator, or the like.

Abstract

一种测光模块，其包括检测子电路（110）、对比子电路（120）和遮挡层，所述遮挡层包括至少一个遮挡元件（121），所述检测子电路（110）包括第一光敏元件，所述检测子电路（110）用于根据所述第一光敏元件接收到的光照和所述检测子电路（110）的输入信号输出检测信号；所述对比子电路（120）包括第二光敏元件，所述遮挡层中的至少一个遮挡元件（121）至少覆盖所述第二光敏元件，所述对比子电路（120）用于根据所述对比子电路（120）的输入信号输出对比信号；其中，所述第一光敏元件和所述第二光敏元件结构相同，以使得所述第一光敏元件与第二光敏元件对光照的响应相同，并且所述第一光敏元件与所述第二光敏元件对环境的响应相同。

Description

测光模块、测光电路和电子设备
相关申请的交叉引用
本申请要求于2017年8月31日递交的中国专利申请第201710772573.X号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。
技术领域
本公开涉及电子设备领域，具体地，涉及一种测光模块、测光电路和电子设备。
背景技术
很多电子设备上都设置有测光电路，通过该测光电路对环境光或者对照射光进行检测，然后根据检测到的光强度做出不同的反应。例如，在显示设备中，设置测光电路，检测环境光的亮度，并根据环境光亮度调节显示亮度，以获得更好的用户体验。
如何对光线的亮度进行准确的测量成为本领域亟待解决的技术问题。
发明内容
本公开的目的在于提供一种测光模块、一种测光电路和一种电子设备，所述测光电路能够准确地检测光的亮度。
为了实现上述目的，作为本公开的一个方面，提供一种测光模块，包括检测子电路、对比子电路和遮挡层，所述遮挡层包括至少一个遮挡元件，所述检测子电路包括第一光敏元件，所述检测子电路用于根据所述第一光敏元件接收到的光照和经由所述检测子电路的输入信号输出检测信号；所述对比子电路包括第二光敏元件，所述遮挡层中的至少一个遮挡元件至少覆盖所述第二光敏元件，所述对比子电路用于根据所述对比子电路的输入信号输出对比信号；其中，所述第一光 敏元件和所述第二光敏元件结构相同，以使得所述第一光敏元件与第二光敏元件对光照的响应相同，并且所述第一光敏元件与所述第二光敏元件对环境的响应相同。
可选的，所述第一光敏元件的输入端与所述检测子电路的输入端电连接，所述检测子电路的输入端用于从外部接收所述检测子电路的输入信号，当所述检测子电路的控制端接收到第一控制信号时，所述第一光敏元件的输出端与所述检测子电路的输出端导通；所述第二光敏元件的输入端与所述对比子电路的输入端电连接，所述对比子电路的输入端用于从外部接收所述对比子电路的输入信号，当所述对比子电路的控制端接收到第一控制信号时，所述第二光敏元件的输出端与所述对比子电路的输出端导通。
可选的，所述检测子电路还包括第一开关元件，所述第一开关元件的控制端作为所述检测子电路的控制端，所述第一开关元件的输入端与所述第一光敏元件的输出端相连，所述第一开关元件的输出端作为所述检测子电路的输出端，所述第一开关元件被配置为在该第一开关元件的控制端接收到第一控制信号时将该第一开关元件的输入端与输出端导通。
可选的，所述第一开关元件包括第一开关晶体管，所述第一开关晶体管的栅极作为所述第一开关元件的控制端，所述第一开关晶体管的第一极作为所述第一开关元件的输入端，所述第一开关晶体管的第二极作为所述第一开关元件的输出端。
可选的，所述遮挡层包括多个所述遮挡元件，至少一个所述遮挡元件覆盖所述第一开关元件。
可选的，所述对比子电路还包括第二开关元件，所述第二开关元件的控制端作为所述对比子电路的控制端，所述第二开关元件的输入端与所述第二光敏元件的输出端相连，所述第二开关元件的输出端作为所述检测子电路的输出端，所述第二开关元件被配置为在该第二开关元件的控制端接收到第一控制信号时将该第二开关元件的输入端与输出端导通。
可选的，所述第二开关元件包括第二开关晶体管，所述第二开关 晶体管的栅极作为所述第二开关元件的控制端，所述第二开关晶体管的第一极作为所述第二开关元件的输入端，所述第二开关晶体管的第二极作为所述第二开关元件的输出端。
可选的，所述遮挡层包括多个所述遮挡元件，至少一个所述遮挡元件覆盖所述第二开关元件。
可选的，所述检测子电路的控制端与所述对比子电路的控制端电连接。
可选的，所述第一光敏元件包括第一光敏晶体管，所述第一光敏晶体管的栅极与恒定电压源相连，所述第一光敏晶体管的第一极作为所述第一光敏元件的输入端，所述第一光敏晶体管的第二极作为所述第一光敏元件的输出端，所述第一光敏晶体管配置为当第一光敏晶体管的栅极接收到所述恒定电压源输入的恒定电压时，所述第一光敏晶体管的第一极和该第一光敏晶体管的第二极导通；所述第二光敏元件包括第二光敏晶体管，所述第二光敏元件的栅极与恒定电压源相连，所述第二光敏晶体管的第一极作为所述第二光敏元件的输入端，所述第二光敏晶体管的第二极作为所述第二光敏元件的输出端，所述第二光敏晶体管配置为当所述第二光敏晶体管的栅极接收到所述恒定电压源输入的恒定电压时，所述第二光敏晶体管的第一极和该第二光敏晶体管的第二极导通。
可选的，所述第一光敏元件包括第一光敏晶体管和第一辅助光敏二极管，所述第一光敏晶体管的栅极与恒定电压源相连，所述第一光敏晶体管的第一极与所述第一辅助光敏二极管的阴极相连，所述第一光敏晶体管的第二极作为所述第一光敏元件的输出端，所述第一光敏晶体管配置为当所述第一光敏晶体管的栅极接收到所述恒定电压源输入的恒定电压时，所述第一光敏晶体管的第一极和该第一光敏晶体管的第二极导通，所述第一辅助光敏二极管的阳极作为所述第一光敏元件的输入端；所述第二光敏元件包括第二光敏晶体管和第二辅助光敏二极管，所述第二光敏元件的栅极与所述恒定电压源相连，所述第二光敏晶体管的第一极与所述第二辅助光敏二极管的阴极相连，所述第二光敏晶体管的第二极作为所述第二光敏元件的输出端，所述第二 光敏晶体管配置为当所述第二光敏晶体管的栅极接收到所述恒定电压源输入的恒定电压时，所述第二光敏晶体管的第一极和该第二光敏晶体管的第二极导通，所述第二辅助光敏二极管的阳极作为所述第二光敏元件的输入端。
提供一种测光电路，包括至少一个测光模块，所述测光模块为前述的测光模块，所述测光电路包括第一输出端和第二输出端，从所述第一输出端根据所述检测子电路的输出信号输出第一输出信号，从所述第二输出端根据所述对比子电路的输出信号输出第二输出信号。
可选的，所述测光电路还包括复位子电路，所述复位子电路的输入端与所述测光电路的复位信号端相连，所述复位信号端用于提供复位电压，所述复位子电路的第一输出端与所述检测子电路的输出端相连，所述复位子电路的第二输出端与所述对比子电路的输出端相连，所述复位子电路配置为在该复位子电路的控制端接收到第一复位信号时将所述复位子电路的输入端与所述复位子电路的第一输出端和第二输出端导通，以使得所述复位子电路的第一输出端和第二输出端复位至所述复位电压。
可选的，所述复位子电路包括第一复位晶体管和第二复位晶体管，所述第一复位晶体管的第一极与所述复位子电路的输入端相连，所述第一复位晶体管的栅极与所述复位子电路的控制端相连，所述第一复位晶体管的第二极作为所述复位子电路的第一输出端与所述检测子电路的输出端相连，所述第一复位晶体管的栅极接收到第一复位信号时，所述第一复位晶体管的第一极和该第一复位晶体管的第二极导通；所述第二复位晶体管的第一极与所述复位子电路的输入端相连，所述第二复位晶体管的栅极与所述复位子电路的控制端相连，所述第二复位晶体管的第二极作为所述复位子电路的第二输出端与所述对比子电路的输出端相连，所述第二复位晶体管的栅极接收到第一复位信号时，所述第二复位晶体管的第一极和该第二复位晶体管的第二极导通。
可选的，所述测光电路还包括第一稳压输出子电路和第二稳压输出子电路；其中，所述第一稳压输出子电路用于稳定所述检测子电路 的输出信号以输出所述第一输出信号，所述第二稳压输出子电路用于稳定所述对比子电路的输出信号以输出所述第二输出信号。
可选的，所述第一稳压输出子电路包括第一稳压晶体管和第一输出晶体管，所述第一稳压晶体管的栅极与所述检测子电路的输出端相连，所述第一稳压晶体管的第一极与第一电平信号端相连，所述第一稳压晶体管的第二极与所述第一输出晶体管的第一极相连，所述第一输出晶体管的第二极与所述测光电路的第一输出端相连；所述第二稳压输出子电路包括第二稳压晶体管和第二输出晶体管，所述第二稳压晶体管的栅极与所述对比子电路的输出端相连，所述第二稳压晶体管的第一极与第一电平信号端相连，所述第二稳压晶体管的第二极与所述第二输出晶体管的第一极相连，所述第二输出晶体管的第二极与所述测光电路的第二输出端相连，所述第一输出晶体管的栅极与所述第二输出晶体管的栅极相连。
可选的，至少一个所述遮挡元件覆盖所述复位子电路。
可选的，至少一个所述遮挡元件覆盖所述第一稳压输出子电路，至少一个所述遮挡元件覆盖所述第二稳压输出子电路。
提供一种电子设备，所述电子设备包括测光电路，所述测光电路为前述的测光电路，所述电子设备还包括亮度计算子电路，所述亮度计算子电路的第一输入端与所述检测子电路的输出端相连，所述亮度计算子电路的第二输入端与所述对比子电路的输出端相连，所述亮度计算子电路能够根据所述检测子电路的输出信号和所述对比子电路的输出信号确定所述检测子电路受到的光照的强度。
提出一种测光电路的工作方法，所述测光电路包括测光模块，所述测光模块包括检测子电路、对比子电路和遮挡层，所述遮挡层包括至少一个遮挡元件，所述检测子电路包括第一光敏元件，所述检测子电路用于根据所述第一光敏元件接收到的光照和经由所述检测子电路的输入信号输出检测信号；所述对比子电路包括第二光敏元件，所述遮挡层中的至少一个遮挡元件至少覆盖所述第二光敏元件，所述对比子电路用于根据所述对比子电路的输入信号输出对比信号；所述第一光敏元件和所述第二光敏元件结构相同，以使得所述第一光敏元件 与第二光敏元件对光照的响应相同，并且所述第一光敏元件与所述第二光敏元件对环境的响应相同，所述方法包括复位子阶段和采集子阶段，在所述复位子阶段，恒定电压源向复位子电路提供第一复位信号，并向检测子电路的输入端和对比子电路的控制端提供第一复位信号；恒定电压源向第一稳压输出子电路和第二稳压输出子电路提供第二控制信号；在所述采集子阶段，恒定电压源向复位子电路提供第二复位信号，向检测子电路的输入端和对比子电路的控制端提供第一控制信号，向第一稳压输出子电路和第二稳压输出子电路提供第一控制信号。
可选的，所述复位子阶段包括第一复位子阶段和第二复位子阶段，在所述第一复位子阶段，恒定电压源向所述检测子电路的输入端和所述对比子电路的控制端提供第一电平信号；在所述第二复位子阶段，恒定电压源向所述检测子电路的输入端和所述对比子电路的控制端提供第二电平信号。
可选的，复位子阶段和采集子阶段之间存在时间间隔。
可选的，所述第一电平信号是高电平信号，所述第二控制信号是低电平信号。
附图说明
附图是用来提供对本公开的进一步理解，并且构成说明书的一部分，与下面的具体实施方式一起用于解释本公开，但并不构成对本公开的限制。在附图中：
图1A是本公开所提供的测光电路的功能框图；
图1B是本公开所提供的测光电路的第一种实施方式的示意图；
图2是本公开所提供的测光电路的第二种实施方式的示意图；
图3是本公开所提供的测光电路的第三种实施方式的示意图；
图4是驱动测光电路的信号时序图。
具体实施方式
以下结合附图对本公开的具体实施方式进行详细说明。应当理解 的是，此处所描述的具体实施方式仅用于说明和解释本公开，并不用于限制本公开。
作为本公开的一个方面，提供一种测光模块，其中，如图1A所示，所述测光模块包括检测子电路110、对比子电路120和遮挡层，所述遮挡层包括至少一个遮挡元件121。
如图1B所示，检测子电路110包括第一光敏元件，该检测子电路110用于根据第一光敏元件接收到的光照和检测子电路110的输入信号输出检测信号。
对比子电路120包括第二光敏元件，遮挡层中的至少一个遮挡元件121至少覆盖所述第二光敏元件，以防止光线照射该第二光敏元件的感光部。并且，对比子电路120用于根据所述对比子电路的输入信号输出对比信号。
其中，所述第一光敏元件和所述第二光敏元件结构可以相同。
在本公开中，光敏元件包括但不限于光敏二极管、光敏三极管、光敏薄膜晶体管、光敏电阻等。第一光敏元件和第二光敏元件对光照的响应相同是指，当相同量的光照射到第一光敏元件和第二光敏元件并且其他外部条件相同时，第一光敏元件由于所述光导致的电特性的变化与第二光敏元件由于所述光导致的电特性的变化相同。第一光敏元件和第二光敏元件对环境的响应相同是指，在无光照时，第一光敏元件由于环境条件(例如，温度、湿度、寄生电容、其他导电部件产生的电场、自身的漏电流等)导致的电特性的变化与第二光敏元件由于相同的环境条件导致的电特性的变化相同。例如，当光敏元件是光敏二极管、光敏三极管或光敏薄膜晶体管时，所述电特性的变化可以指由光敏元件产生的电流或电压的变化，当光敏元件是光敏电阻时，所述电特性的变化可以指光敏电阻的阻值的变化。
需要解释的是，在没有光照的情况下，如第一光敏元件的输入端和输出端之间存在电压差，第一光敏元件能够导通，使得检测子电路110有信号输出。当光照照射第一光敏元件时，第一光敏元件仍然导通，但是，第一光敏元件的输出信号(例如，电压值或者电流值)大小会发生变化，导致检测子电路110的输出信号发生变化。与此同时， 第一光敏元件的输出状态还受该第一光敏元件所处环境的其他因素的影响。例如，受其他导电元件产生的电场的影响、该第一光敏元件的漏电流的影响等。
所述第二光敏元件的结构与所述第一光敏元件的结构相同，因此，所述第二光敏元件除了对光照的反应与所述第一光敏元件对光照的反应相同之外，所述第二光敏元件对其他环境因素的反应也与所述第一光敏元件对其他环境因素的反应相同。
在本公开所提供的测光模块中，所述第一光敏元件所处的环境与第二光敏元件所处的环境的差别仅在于，第一光敏元件受到光照，而所述第二光敏元件在遮挡元件的遮挡之下不会受到光照。
在利用所述测光模块检测光强度时，检测子电路110输出的信号除了要受到光照的影响之外，还会受到其他环境因素(例如，寄生电容、其他导电部件产生的电场、自身的漏电流)等影响，而对比子电路120输出的信号仅受到其他环境因素(例如，寄生电容、其他导电部件产生的电场、自身的漏电流)的影响。因此，将检测子电路110输出的信号与对比子电路120输出的信号进行对比，可以抵消其他环境因素对光强检测结果的影响，得到准确的检测结果。
下面举一个例子对本申请的工作原理进行说明。检测子电路110在输入电压为V1、光照强度为A的情况下，输出的电压为V2。该输出电压V2包括光照以及其他环境因素对输出电压的影响。
对比子电路120在输入电压为V1的情况下输出的电压为V3，该输出电压V3仅包括其他环境因素对输出电压的影响。那么，光照对检测子电路110的输出电压的改变为V2-V3。根据该电压变化量可以计算出光照强度。
在本公开中，对如何向检测子电路110的输入端以及对比子电路120提供输入电压并不做特殊规定。在图1B至图3中所示的具体实施方式中，利用输入信号端VD向检测子电路110的输入端以及对比子电路120提供输入电压。
在本公开中，对如何形成遮挡层并不做特殊的规定。例如，当所述测光模块应用于显示装置中时，可以在形成显示装置的黑矩阵时同 步地形成所述遮挡层。即，遮挡层的材料与黑矩阵的材料相同。
为了便于控制，可选地，所述第一光敏元件的输入端与所述检测子电路110的输入端电连接，当检测子电路110的控制端接收到第一控制信号时，所述第一光敏元件的输出端与检测子电路110的输出端导通。
同样地，所述第二光敏元件的输入端与对比子电路120的输入端电连接，当对比子电路120的控制端接收到第一控制信号时，所述第二光敏元件的输出端与该对比子电路120的输出端导通。
在上述实施方式中，可以通过第一控制信号来控制第一光敏元件的输入端和该第一光敏元件所处的检测子电路的输出端之间的导通状态。使用者或者操作者可以在需要检测光强度的情况下向检测子电路110的控制端提供第一控制信号，而在不需要检测光强度的情况下向检测子电路110的控制端提供第二控制信号(当检测子电路110的控制端接收到第二控制信号时，第一光敏元件的输出端与检测子电路110的输出端断开)，由此可知，检测子电路110并非一直输出信号，从而降低了能耗，并延长了检测子电路110中各个元件的使用寿命。第一控制信号和第二控制信号中的一者为高电平信号，另一者为低电平信号。
同样地，对比子电路120的控制端接收到第二控制信号时，第二光敏元件的输出端与对比子电路110的输出端断开。仅在使用者或者操作者需要检测光强度的情况下，对比子电路120将第二光敏元件的输出端与对比子电路120的输出端导通，从而降低了能耗，并延长了对比子电路120中各个元件的使用寿命。
在本公开中，对检测子电路110的具体结构并不做特殊的限定，可选地，检测子电路110还包括第一开关元件，该第一开关元件的控制端作为检测子电路110的控制端，所述第一开关元件的输入端与所述第一光敏元件的输出端相连，所述第一开关元件的输出端作为所述检测子电路的输出端，所述第一开关元件能够在该第一开关元件的控制端接收到第一控制信号时将该第一开关元件的输入端与输出端导通。
提供第一开关元件的目的在于，确保仅在需要对光线进行检测的时刻向第一光敏元件的输入端提供电信号，在不需要对光线进行检测的时刻不向第一光敏元件的输入端提供电信号，从而可以减少第一光敏元件的工作时间，延长第一光敏元件的使用寿命。
在图1B至图3所示的具体实施方式中，所述第一开关元件包括第一开关晶体管T2，该第一开关晶体管T2的栅极作为所述第一开关元件的控制端，第一开关晶体管T2的第一极作为所述第一开关元件的输入端，第一开关晶体管T2的第二极作为所述第一开关元件的输出端。
第一开关晶体管T2为层状结构，可以通过构图工艺形成该第一开关晶体管T2。本公开所提供的测光模块可以应用于显示装置中，因此，可以在制造形成显示装置的像素电路时形成第一开关晶体管T2，从而可以简化显示装置的整体制造工艺。
在本公开中，遮挡层包括多个遮挡元件。在图1B至图3中所示的具体实施方式中，遮挡层包括遮挡元件111和遮挡元件121。为了避免环境光对第一开关晶体管T2的状态造成影响，可选地，遮挡层中的遮挡元件111覆盖所述第一开关晶体管T2。利用遮挡元件111覆盖第一开关晶体管T2还可以防止第一开关晶体管T2老化，从而既可以提高检测结果的信噪比，又可以延长第一开关晶体管T2的使用寿命。
在图1B至图3中所示的具体实施方式中，第一开关晶体管T2为N型晶体管，第一开关晶体管T2的第一极为该第一开关晶体管T2的源极，第一开关晶体管T2的第二极为该第一开关晶体管T2的漏极。
可选地，对比子电路120还包括第二开关元件，该第二开关元件的控制端作为所述对比子电路的控制端，所述第二开关元件的输入端与所述第二光敏元件的输出端相连，所述第二开关元件的输出端作为所述检测子电路的输出端，所述第二开关元件能够在该第二开关元件的控制端接收到第一控制信号时将该第二开关元件的输入端与输出端导通。
与检测子电路110中设置的第一开关元件相似，在对比子电路 120中设置第二开关元件可以确保仅在需要对光线进行检测的时刻向第二光敏元件的输入端提供电信号，在不需要对光线进行检测的时刻不向第二光敏元件的输入端提供电信号，从而可以减少第二光敏元件的工作时间，延长第二光敏元件的使用寿命。
在图1B至图3中所示的具体实施方式中，所述第二开关元件包括第二开关晶体管T3，该第二开关晶体管T3的栅极作为所述第二开关元件的控制端，第二开关晶体管T3的第一极作为所述第二开关元件的输入端，第二开关晶体管T3的第二极作为所述第二开关元件的输出端。
第二开关元件包括第二开关晶体管T3的优点与第一开关元件包括第一开关晶体管T2的优点类似，第二开关晶体管T3为层状结构，可以通过构图工艺形成该第二开关晶体管T3。本公开所提供的测光模块可以应用于显示装置中，因此，可以在制造形成显示装置的像素电路时形成第二开关晶体管T3，从而可以简化显示装置的整体制造工艺。
遮挡层可以包括多个遮挡元件。为了避免环境光对第二开关晶体管T3的开关状态造成影响，可选地，遮挡层中的至少一个遮挡元件121覆盖第二开关晶体管T3。
在图1至图3中所示的具体实施方式中，第二开关晶体管T3为N型晶体管，第二开关晶体管T3的第一极为该第二开关晶体管T3的源极，第二开关晶体管T3的第二极为该第二开关晶体管T3的漏极。
利用遮挡元件121覆盖第二开关晶体管T3还可以防止第二开关晶体管T3老化，从而既可以提高检测结果的信噪比，又可以延长第二开关晶体管T3的使用寿命。
可选地，检测子电路110的控制端与对比子电路120的控制端电连接。检测子电路110和对比子电路120可以实现同步输出，从而便于对检测子电路110和对比子电路120的导通状态进行控制，并且便于计算检测结果。
在本公开中，对第一光敏元件和第二光敏元件的具体结构都不做特殊的限制。例如，第一光敏元件和第二光敏元件可以均为光敏薄膜 晶体管，可选的，第一光敏元件和第二光敏元件可以均为光敏二极管，也可以均为光敏晶体管。
为了便于制造，如图1B至图3中所示，所述第一光敏元件包括第一光敏晶体管T1，相应地，第一光敏晶体管T1的栅极与恒定电压输入端相连，第一光敏晶体管T1的第一极作为所述第一光敏元件的输入端，第一光敏晶体管T1的第二极作为所述第一光敏元件的输出端。第一光敏晶体管T1的栅极接收到恒定电压源输入的恒定电压时，第一光敏晶体管T1的第一极和该第一光敏晶体管T1的第二极导通。在本公开中，对恒定电压源输入的信号类型并不做特殊的规定。当第一光敏晶体管T1为N型晶体管时，恒定电压源输入的信号为高电平信号，当第一光敏晶体管T1为P型晶体管时，恒定电压源输入的信号为低电平信号。
如上文中所述，第一光敏元件的结构与第二光敏元件的结构相同，因此，所述第二光敏元件包括第二光敏晶体管T4，第二光敏晶体管T4的栅极与所述恒定电压源相连，第二光敏晶体管T4第一极作为所述第二光敏元件的输入端，第二光敏晶体管T4的第二极作为所述第二光敏元件的输出端。第二光敏晶体管T4的栅极接收到所述恒定电压源输入的恒定电压时，第二光敏晶体管T4的第一极和该第二光敏晶体管T4的第二极导通。
在本公开中，由于栅极与恒定电压源相连，因此，第一光敏晶体管T1和第二光敏晶体管T4均处于导通状态。第一光敏晶体管T1能够接收光照，第二光敏晶体管T4由于遮挡元件的作用不会接收光照。
在图3中所示的具体实施方式中，所述第一光敏元件包括第一光敏晶体管T1和第一辅助光敏二极管D1。第一光敏晶体管T1的栅极与恒定电压源相连，第一光敏晶体管T1的第一极与第一辅助光敏二极管D1的阴极相连，第一光敏晶体管T1的第二极作为所述第一光敏元件的输出端。第一光敏晶体管T1的栅极接收到恒定电压源输入的恒定电压时，第一光敏晶体管T1的第一极和该第一光敏晶体管T1的第二极导通。并且，第一辅助光敏二极管D1的阳极作为所述第一光敏元件的输入端。在本公开中，第一光敏元件的输入端用于输入高电 平信号，因此，第一辅助光敏二极管时刻处于导通状态。
相应地，如图3中所示，所述第二光敏元件包括第二光敏晶体管T4和第二辅助光敏二极管D2。第二光敏元件T4的栅极与恒定电压源相连，第二光敏晶体管T4的第一极与第二辅助光敏二极管D2的阴极相连，第二光敏晶体管T4的第二极作为所述第二光敏元件的输出端。第二光敏晶体管T4的栅极接收到恒定电压输入端输入的恒定电压时，第二光敏晶体管T4的第一极和该第二光敏晶体管T4的第二极导通。并且，第二辅助光敏二极管D2的阳极作为所述第二光敏元件的输入端。容易理解的是，遮挡层中的遮挡元件121可以覆盖第二光敏晶体管T4和第二辅光敏二极管D2。
设置第一辅助光敏二极管D1可以增加因光照而改变的信号量，从而可以提高检测结果的精度。
根据本公开的第二个方面，提供一种测光电路，所述测光电路包括至少一个测光模块，其中，如图1B至3中所示，所述测光模块为本公开所提供的上述测光模块。所述测光电路包括第一输出端Vout1和第二输出端Vout2，第一输出端Vout1用于根据检测子电路110的输出端输出的信号输出第一输出信号，第二输出端Vout2用于根据对比子电路120的输出端输出的信号输出第二输出信号。
可以将所述测光电路设置在任何需要测光的电子设备中。例如，可以将测光电路设置在显示装置中，以检测环境光亮度。显示装置可以根据环境光亮度调节显示亮度。如上文中所述，由于测光模块中设置了对比子电路，因此，在计算光亮度时，可以排除其他环境因素的影响，从而提高检测精度。
为了进一步提高检测精度，可选地，所述测光电路还包括复位子电路130，该复位子电路130的输入端与复位信号端Vrst相连，复位子电路130的第一输出端与检测子电路110的输出端相连，复位子电路130的第二输出端与对比子电路120的输出端相连，复位子电路130能够在该复位子电路130的控制端接收到第一复位信号时将复位子电路130的输入端与该复位子电路130的输出端导通。
复位子电路130的控制端接收到第二复位信号时，该复位子电路 130的输入端和输出端之间断开。其中，第一复位信号和第二复位信号中的一者为高电平信号，另一者为低电平信号。
在利用所述测光电路测光之前，对所述测光模块的检测子电路110的输出端以及对比子电路120的输出端进行复位，从而可以消除残余电荷的影响，提高检测精度。
在本公开中，当检测子电路110的输入端、以及对比子电路120的输入端输入的信号均为高电平信号时，复位信号端Vrst输入的复位信号可以为低电平信号。因此，在采集阶段结束后，检测子电路110的输出端的电位、以及对比子电路120的输出端的电位均较高，因此，在复位阶段，通过将复位子电路130的输入端和该复位子电路130的输出端导通，可以将处于高电平电位的检测子电路110的输出端和对比子电路120的输出端下拉至复位信号端Vrst提供的低电平电位。
在本公开中，对复位子电路130的具体结构并不做特殊限定。在图1B至图3中所示的具体实施方式中，复位子电路130包括第一复位晶体管T5和第二复位晶体管T6。
如图1B至图3中所示，第一复位晶体管T5的第一极与复位子电路130的输入端相连，第一复位晶体管T5的栅极与复位子电路130的控制端相连，第一复位晶体管T5的第二极与检测子电路110的输出端相连。第一复位晶体管T5的栅极接收到第一复位信号时，该第一复位晶体管T5的第一极和该第一复位晶体管T5的第二极导通，当第一复位晶体管T5的栅极接收到第二复位信号时，该第一复位晶体管T5的第一极和该第一复位晶体管T5的第二极之间断开。
第二复位晶体管T6的第一极与复位子电路130的输入端相连，第二复位晶体管T6的栅极与复位子电路130的控制端相连，第二复位晶体管T6的第二极与对比子电路120的输出端相连。第二复位晶体管T6的栅极接收到第一复位信号时，该第二复位晶体管T6的第一极和该第二复位晶体管T6的第二极导通，第二复位晶体管T6的栅极接收到第二复位信号时，该第二复位晶体管T6的第一极和该第二复位晶体管T6的第二极之间断开。
为了延长第一复位晶体管T5和第二复位晶体管T6的使用寿命， 可选地，第一复位晶体管T5、以及第二复位晶体管T6上均设置有遮挡元件。
在本公开的可选实施方式中，检测子电路110和对比子电路120是同步控制的，因此，对检测子电路110和对比子电路120进行复位时，检测子电路110和对比子电路120均处于非工作状态。当复位子电路130的控制端接收到第一复位信号时，复位子电路130同时对检测子电路110的输出端和对比子电路120的输出端进行复位。
为了稳定输出信号、便于计算检测结果，可选地，所述测光电路还包括第一稳压输出子电路140和第二稳压输出子电路150。
第一稳压输出子电路140和第二稳压输出子电路150用于将信号稳定地传输至后续电路，其中第一稳压输出子电路140用于稳定检测子电路110的输出信号以生成第一输出信号，第二稳压输出子电路150用于稳定对比子电路120的输出信号以生成第二输出信号。如图1B至3中所示，第一稳压输出子电路140包括第一稳压晶体管T7和第一输出晶体管T9。具体地，第一稳压晶体管T7的栅极与检测子电路110的输出端相连，第一稳压晶体管T7的第一极与第一电平信号端V0相连。第一稳压晶体管T7的第二极与所述第一输出晶体管T9的第一极相连，第一输出晶体管T9的第二极与所述测光电路的第一输出端相连。
相应地，第二稳压输出子电路150包括第二稳压晶体管T8和第二输出晶体管T10。具体地，第二稳压晶体管T8的栅极与对比子电路120的输出端相连，第二稳压晶体管T8的第一极与第一电平信号端V0相连。第二稳压晶体管T8的第二极与第二输出晶体管T10的第一极相连，第二输出晶体管T10的第二极与所述测光电路的第二输出端相连，第一输出晶体管T9的栅极与第二输出晶体管T10的栅极相连。
在本公开中，第一稳压晶体管T7和第二稳压晶体管T8起到跟随稳压的作用。
第一稳压晶体管T7的输出电压随着该第一稳压晶体管T7的栅极电压改变而改变，并且，第一稳压晶体管T7输出的电压信号更加稳定。第一输出晶体管T9的栅极接收到是的该第一输出晶体管T9导通 的信号时，第一输出晶体管T9的第一极和第二极导通，将经过第一稳压晶体管T7稳压后的电压(即，第一输出信号)输出。
第二稳压晶体管T8的输出电压随着该第二稳压晶体管T8的栅极电压改变而改变。第二输出晶体管T10的栅极接收到是的该第二输出晶体管T10导通的信号时，第二输出晶体管T10的第一极和第二极导通，将经过第二稳压晶体管T8稳压后的电压(即，第二输出信号)输出。
为了延长使用寿命，第一稳压晶体管T7、第二稳压晶体管T8、第一输出晶体管T9和第二输出晶体管T10均可以被所述遮挡元件覆盖。
在图1B至图3中所示的具体实施方式中，第一稳压晶体管T7和第二稳压晶体管T8均为N型晶体管，第一电平信号端V0输入的第一电平信号为高电平信号。当第一稳压晶体管T7和第二稳压晶体管T8为P型晶体管时，第一电平信号端输入的第一电平信号为低电平信号。在本公开中，第一电平信号端V0可以与直流电源相连。
在本公开中，对一个测光电路中所包括的测光模块的具体数量并不做特殊的规定，例如，在图1和图3中所示的实施方式中，一个所述测光电路包括一个测光模块。
当然，本公开并不限于图1中所示的具体实施方式。所述测光电路还可以包括多个测光模块，为了便于制造，可选地，多个测光模块排列为多行。在图2中所示的具体实施方式中，测光电路包括排列为四行的四个测光模块。
下面结合图4中的信号时序图介绍所述测光电路的工作原理。在本公开实施例中，第一光敏元件包括第一光敏晶体管T1，第二光敏元件包括第二光敏晶体管T4，第一光敏晶体管T1的栅极和第二光敏晶体管T4的栅极均与第一检测栅线Gate1相连，检测子电路110的控制端以及对比子电路120的控制端均与第二检测栅线Gate2相连。测光电路的复位子电路的控制端与复位栅线Gate 3相连，第一稳压输出子电路140的控制端以及第二稳压输出子电路150的控制端均与输出栅线Gate4相连。在本一个示例中，所有的薄膜晶体管均为高电平导 通、低电平截止的N型晶体管。第一光敏晶体管T1的第一极与输入信号端VD相连，输入信号端VD为检测子电路110提供输入信号。第二光敏晶体管T4的第一极与输入信号端VD相连，输入信号端VD为对比子电路120提供输入信号。
在本公开所提供的测光电路中，一个工作阶段包括两个子阶段：复位子阶段t1和采集子阶段t2。在复位子阶段t1和采集子阶段t2，向第一检测栅线Gate1提供的恒定电压可为高电平电压。向第一检测栅线Gate1提供的高电平电压是使得第一光敏晶体管T1、以及第二光敏晶体管T4的光特性最佳的电压。
在复位子阶段t1中，向复位栅线Gate3提供高电平信号，向第一检测栅线Gate1提供高电平信号，向输出栅线Gate4提供低电平信号。复位子阶段包括第一复位子阶段t11和第二复位子阶段t12。
在第一复位子阶段t11，向第二检测栅线Gate2提供第一电平信号，光敏晶体管T1、第一控制晶体管T2、第二控制晶体管T3、光敏晶体管T4导通。第一复位晶体管T5和第二复位晶体管T6均导通，从而可以将检测子电路110的在上一个工作周期积累的电荷放至该检测子电路110的输出端，并将对比子电路120的上个工作周期积累的电荷放至该对比子电路120的输出端。其中，第一电平信号是高电平信号。
在第二复位子阶段t12，向第二检测栅线Gate2提供第二电平信号，光敏晶体管T1、第一控制晶体管T2、第二控制晶体管T3、光敏晶体管T4均截止，第一复位晶体管T5和第二复位晶体管T6均导通，从而可以将检测子电路110的输出端以及对比子电路120的输出端均下拉至复位信号端Vrst输入的复位电压。其中，第二电平信号为与第一电平信号反向的低电平信号。
在采集子阶段t2，向复位栅线Gate3提供低电平信号，向第一检测栅线Gate1提供高电平信号，向第二检测栅线Gate2提供高电平信号，向输出栅线Gate4提供高电平信号。在采集子阶段t2，光敏晶体管T1、第一控制晶体管T2、第二控制晶体管T3、光敏晶体管T4、第一稳压晶体管T7、第一输出晶体管T9、第二稳压晶体管T8、第二输 出晶体管T10均导通。根据第一输出晶体管T9输出的信号Vout1与第二输出晶体管T10输出的信号Vout2相减所得的值，可以得出光照对检测子电路110输出的影响。通过光与电信号换算关系可以得出光强值。
可选地，复位子阶段t1与采集子阶段t2之间存在时间间隔，从而可以使得检测子电路的输出端的电压以及对比子电路的电压更加稳定，并确保最终计算获得的光强度更加准确。
作为本公开的第三个方面，提供一种电子设备，所述电子设备包括测光电路，其中，所述测光电路为本公开所提供的上述测光电路，所述电子设备还包括亮度计算子电路，所述亮度计算子电路的第一输入端与所述检测电路的第一输出端相连，所述亮度计算子电路的第二输入端与所述检测电路的第二输出端相连，所述亮度计算子电路能够根据所述检测电路的第一输出端输出的信号与所述检测电路的第二输出端输出的信号确定所述检测子电路受到的光照的强度。如上文中所述，所述测光电路在检测光信号的强度时，可以消除漏电流、和其他环境因素的影响，从而具有较高的检测精度。
在本公开中，对电子设备的具体结构并不做特殊的要求。例如，所述电子设备可以是包括显示面板的显示装置。具体地，所述电子设备还包括亮度调节模块，所述测光电路设置在所述显示面板上，所述亮度调节模块能够根据所述亮度计算模块确定的环境亮度调节所述显示面板的显示亮度。
在本公开中，可以在形成显示面板中的像素电路时形成所述测光电路，从而可以提高电子设备的集成性。
进一步可选地，可以将测光电路设置在显示面板的非显示区。
当然，本公开并不限于此，例如，可以将测光电路集成在芯片上，然后将芯片与显示面板电连接。
在本公开中，所述电子设备可以是手机、平板电脑、电视机、电子纸阅读器、GPS导航仪等电子设备。
可以理解的是，以上实施方式仅仅是为了说明本公开的原理而采用的示例性实施方式，然而本公开并不局限于此。对于本领域内的普通技术人 员而言，在不脱离本公开的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本公开的保护范围。

Claims (20)

  1. 一种测光模块，包括检测子电路、对比子电路和遮挡层，所述遮挡层包括至少一个遮挡元件，
    所述检测子电路包括第一光敏元件，所述检测子电路用于根据所述第一光敏元件接收到的光照和经由所述检测子电路的输入信号输出检测信号；
    所述对比子电路包括第二光敏元件，所述遮挡层中的至少一个遮挡元件至少覆盖所述第二光敏元件，所述对比子电路用于根据所述对比子电路的输入信号输出对比信号；
    其中，所述第一光敏元件和所述第二光敏元件结构相同，以使得所述第一光敏元件与第二光敏元件对光照的响应相同，并且所述第一光敏元件与所述第二光敏元件对环境的响应相同。
  2. 根据权利要求1所述的测光模块，其中，所述第一光敏元件的输入端与所述检测子电路的输入端电连接，所述检测子电路的输入端用于从外部接收所述检测子电路的输入信号，当所述检测子电路的控制端接收到第一控制信号时，所述第一光敏元件的输出端与所述检测子电路的输出端导通；
    所述第二光敏元件的输入端与所述对比子电路的输入端电连接，所述对比子电路的输入端用于从外部接收所述对比子电路的输入信号，当所述对比子电路的控制端接收到第一控制信号时，所述第二光敏元件的输出端与所述对比子电路的输出端导通。
  3. 根据权利要求2所述的测光模块，其中，所述检测子电路还包括第一开关元件，所述第一开关元件的控制端作为所述检测子电路的控制端，所述第一开关元件的输入端与所述第一光敏元件的输出端相连，所述第一开关元件的输出端作为所述检测子电路的输出端，所述第一开关元件被配置为在该第一开关元件的控制端接收到第一控 制信号时将该第一开关元件的输入端与输出端导通。
  4. 根据权利要求3所述的测光模块，其中，所述第一开关元件包括第一开关晶体管，所述第一开关晶体管的栅极作为所述第一开关元件的控制端，所述第一开关晶体管的第一极作为所述第一开关元件的输入端，所述第一开关晶体管的第二极作为所述第一开关元件的输出端。
  5. 根据权利要求3或4所述的测光模块，其中，所述遮挡层包括多个所述遮挡元件，至少一个所述遮挡元件覆盖所述第一开关元件。
  6. 根据权利要求2至5中任意一项所述的测光模块，其中，所述对比子电路还包括第二开关元件，所述第二开关元件的控制端作为所述对比子电路的控制端，所述第二开关元件的输入端与所述第二光敏元件的输出端相连，所述第二开关元件的输出端作为所述检测子电路的输出端，所述第二开关元件被配置为在该第二开关元件的控制端接收到第一控制信号时将该第二开关元件的输入端与输出端导通。
  7. 根据权利要求6所述的测光模块，其中，所述第二开关元件包括第二开关晶体管，所述第二开关晶体管的栅极作为所述第二开关元件的控制端，所述第二开关晶体管的第一极作为所述第二开关元件的输入端，所述第二开关晶体管的第二极作为所述第二开关元件的输出端。
  8. 根据权利要求7所述的测光模块，其中，所述遮挡层包括多个所述遮挡元件，至少一个所述遮挡元件覆盖所述第二开关元件。
  9. 根据权利要求2至8中任意一项所述的测光模块，其中，所述检测子电路的控制端与所述对比子电路的控制端电连接。
  10. 根据权利要求2至9中任意一项所述的测光模块，其中，所述第一光敏元件包括第一光敏晶体管，所述第一光敏晶体管的栅极与恒定电压源相连，所述第一光敏晶体管的第一极作为所述第一光敏元件的输入端，所述第一光敏晶体管的第二极作为所述第一光敏元件的输出端，所述第一光敏晶体管配置为当第一光敏晶体管的栅极接收到所述恒定电压源输入的恒定电压时，所述第一光敏晶体管的第一极和该第一光敏晶体管的第二极导通；
    所述第二光敏元件包括第二光敏晶体管，所述第二光敏元件的栅极与恒定电压源相连，所述第二光敏晶体管的第一极作为所述第二光敏元件的输入端，所述第二光敏晶体管的第二极作为所述第二光敏元件的输出端，所述第二光敏晶体管配置为当所述第二光敏晶体管的栅极接收到所述恒定电压源输入的恒定电压时，所述第二光敏晶体管的第一极和该第二光敏晶体管的第二极导通。
  11. 根据权利要求2至9中任意一项所述的测光模块，其中，所述第一光敏元件包括第一光敏晶体管和第一辅助光敏二极管，所述第一光敏晶体管的栅极与恒定电压源相连，所述第一光敏晶体管的第一极与所述第一辅助光敏二极管的阴极相连，所述第一光敏晶体管的第二极作为所述第一光敏元件的输出端，所述第一光敏晶体管配置为当所述第一光敏晶体管的栅极接收到所述恒定电压源输入的恒定电压时，所述第一光敏晶体管的第一极和该第一光敏晶体管的第二极导通，所述第一辅助光敏二极管的阳极作为所述第一光敏元件的输入端；所述第二光敏元件包括第二光敏晶体管和第二辅助光敏二极管，所述第二光敏元件的栅极与所述恒定电压源相连，所述第二光敏晶体管的第一极与所述第二辅助光敏二极管的阴极相连，所述第二光敏晶体管的第二极作为所述第二光敏元件的输出端，所述第二光敏晶体管配置为当所述第二光敏晶体管的栅极接收到所述恒定电压源输入的恒定电压时，所述第二光敏晶体管的第一极和该第二光敏晶体管的第二极导通，所述第二辅助光敏二极管的阳极作为所述第二光敏元件的 输入端。
  12. 一种测光电路，包括至少一个测光模块，所述测光模块为权利要求1至11中任意一项所述的测光模块，所述测光电路包括第一输出端和第二输出端，从所述第一输出端根据所述检测子电路的输出信号输出第一输出信号，从所述第二输出端根据所述对比子电路的输出信号输出第二输出信号。
  13. 根据权利要求12所述的测光电路，其中，所述测光电路还包括复位子电路，所述复位子电路的输入端与所述测光电路的复位信号端相连，所述复位信号端用于提供复位电压，所述复位子电路的第一输出端与所述检测子电路的输出端相连，所述复位子电路的第二输出端与所述对比子电路的输出端相连，所述复位子电路配置为在该复位子电路的控制端接收到第一复位信号时将所述复位子电路的输入端与所述复位子电路的第一输出端和第二输出端导通，以使得所述复位子电路的第一输出端和第二输出端复位至所述复位电压。
  14. 根据权利要求13所述的测光电路，其中，所述复位子电路包括第一复位晶体管和第二复位晶体管，
    所述第一复位晶体管的第一极与所述复位子电路的输入端相连，所述第一复位晶体管的栅极与所述复位子电路的控制端相连，所述第一复位晶体管的第二极作为所述复位子电路的第一输出端与所述检测子电路的输出端相连，所述第一复位晶体管的栅极接收到第一复位信号时，所述第一复位晶体管的第一极和该第一复位晶体管的第二极导通；
    所述第二复位晶体管的第一极与所述复位子电路的输入端相连，所述第二复位晶体管的栅极与所述复位子电路的控制端相连，所述第二复位晶体管的第二极作为所述复位子电路的第二输出端与所述对比子电路的输出端相连，所述第二复位晶体管的栅极接收到第一复位信号时，所述第二复位晶体管的第一极和该第二复位晶体管的第二极 导通。
  15. 根据权利要求12至14中任一项所述的测光电路，其中，所述测光电路还包括第一稳压输出子电路和第二稳压输出子电路；其中，所述第一稳压输出子电路用于稳定所述检测子电路的输出信号以输出所述第一输出信号，所述第二稳压输出子电路用于稳定所述对比子电路的输出信号以输出所述第二输出信号。
  16. 根据权利要求15所述的测光电路，其中，
    所述第一稳压输出子电路包括第一稳压晶体管和第一输出晶体管，所述第一稳压晶体管的栅极与所述检测子电路的输出端相连，所述第一稳压晶体管的第一极与第一电平信号端相连，所述第一稳压晶体管的第二极与所述第一输出晶体管的第一极相连，所述第一输出晶体管的第二极与所述测光电路的第一输出端相连；
    所述第二稳压输出子电路包括第二稳压晶体管和第二输出晶体管，所述第二稳压晶体管的栅极与所述对比子电路的输出端相连，所述第二稳压晶体管的第一极与第一电平信号端相连，所述第二稳压晶体管的第二极与所述第二输出晶体管的第一极相连，所述第二输出晶体管的第二极与所述测光电路的第二输出端相连，所述第一输出晶体管的栅极与所述第二输出晶体管的栅极相连。
  17. 根据权利要求12至16中任一项所述的测光电路，其中，至少一个所述遮挡元件覆盖所述复位子电路。
  18. 根据权利要求13至16中任一项所述的测光电路，其中，至少一个所述遮挡元件覆盖所述第一稳压输出子电路，至少一个所述遮挡元件覆盖所述第二稳压输出子电路。
  19. 一种电子设备，所述电子设备包括测光电路，所述测光电路为权利要求12至18中任意一项所述的测光电路，所述电子设备还包 括亮度计算子电路，所述亮度计算子电路的第一输入端与所述检测子电路的输出端相连，所述亮度计算子电路的第二输入端与所述对比子电路的输出端相连，所述亮度计算子电路配置为根据所述检测子电路的输出信号和所述对比子电路的输出信号确定所述检测子电路受到的光照的强度。
  20. 一种测光电路的工作方法，所述测光电路包括测光模块，所述测光模块包括检测子电路、对比子电路和遮挡层，所述遮挡层包括至少一个遮挡元件，所述检测子电路包括第一光敏元件，所述检测子电路用于根据所述第一光敏元件接收到的光照和经由所述检测子电路的输入信号输出检测信号；所述对比子电路包括第二光敏元件，所述遮挡层中的至少一个遮挡元件至少覆盖所述第二光敏元件，所述对比子电路用于根据所述对比子电路的输入信号输出对比信号；所述第一光敏元件和所述第二光敏元件结构相同，以使得所述第一光敏元件与第二光敏元件对光照的响应相同，并且所述第一光敏元件与所述第二光敏元件对环境的响应相同，
    所述方法包括复位子阶段和采集子阶段，
    在所述复位子阶段，恒定电压源向复位子电路提供第一复位信号，并向检测子电路的输入端和对比子电路的控制端提供第一复位信号；恒定电压源向第一稳压输出子电路和第二稳压输出子电路提供第二控制信号；
    在所述采集子阶段，恒定电压源向复位子电路提供第二复位信号，向检测子电路的输入端和对比子电路的控制端提供第一控制信号，向第一稳压输出子电路和第二稳压输出子电路提供第一控制信号。
PCT/CN2018/082278 2017-08-31 2018-04-09 测光模块、测光电路和电子设备 WO2019041814A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/315,561 US10935422B2 (en) 2017-08-31 2018-04-09 Optical measurement module, optical measurement circuit, and electronic device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201710772573.XA CN107478329B (zh) 2017-08-31 2017-08-31 测光模块、测光电路和电子设备
CN201710772573.X 2017-08-31

Publications (1)

Publication Number Publication Date
WO2019041814A1 true WO2019041814A1 (zh) 2019-03-07

Family

ID=60603481

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/082278 WO2019041814A1 (zh) 2017-08-31 2018-04-09 测光模块、测光电路和电子设备

Country Status (3)

Country Link
US (1) US10935422B2 (zh)
CN (1) CN107478329B (zh)
WO (1) WO2019041814A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114170990A (zh) * 2021-12-06 2022-03-11 武汉天马微电子有限公司 显示面板及其环境光检测驱动方法、显示装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107478329B (zh) * 2017-08-31 2019-09-17 京东方科技集团股份有限公司 测光模块、测光电路和电子设备
CN108303177A (zh) * 2018-01-03 2018-07-20 京东方科技集团股份有限公司 光检测单元及其检测方法和光检测装置
CN112484850B (zh) * 2019-09-11 2024-03-26 北京小米移动软件有限公司 光强检测模块、屏幕部件和移动终端

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04252923A (ja) * 1991-01-29 1992-09-08 Toshiba Corp 光検波回路
JPH1137831A (ja) * 1997-07-22 1999-02-12 Mitsubishi Automob Eng Co Ltd 圧縮型荷重センサの取付構造
CN101675466A (zh) * 2007-11-02 2010-03-17 索尼株式会社 显示装置、显示控制方法以及电子设备
CN102063224A (zh) * 2009-11-13 2011-05-18 索尼公司 传感器设备、传感器元件驱动方法，显示设备及电子装置
CN106525233A (zh) * 2016-09-29 2017-03-22 天津大学 消除暗电流影响的光敏检测电路
CN107478329A (zh) * 2017-08-31 2017-12-15 京东方科技集团股份有限公司 测光模块、测光电路和电子设备

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1137841A (ja) * 1997-07-23 1999-02-12 Nikon Corp 電流ー電圧変換回路
JP5068443B2 (ja) * 2005-10-20 2012-11-07 ルネサスエレクトロニクス株式会社 光結合装置
JP4305533B2 (ja) * 2007-03-12 2009-07-29 エプソンイメージングデバイス株式会社 表示装置
JP5512635B2 (ja) * 2011-02-23 2014-06-04 シャープ株式会社 光センサおよび電子機器
JP5734784B2 (ja) * 2011-08-05 2015-06-17 株式会社東芝 光結合装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04252923A (ja) * 1991-01-29 1992-09-08 Toshiba Corp 光検波回路
JPH1137831A (ja) * 1997-07-22 1999-02-12 Mitsubishi Automob Eng Co Ltd 圧縮型荷重センサの取付構造
CN101675466A (zh) * 2007-11-02 2010-03-17 索尼株式会社 显示装置、显示控制方法以及电子设备
CN102063224A (zh) * 2009-11-13 2011-05-18 索尼公司 传感器设备、传感器元件驱动方法，显示设备及电子装置
CN106525233A (zh) * 2016-09-29 2017-03-22 天津大学 消除暗电流影响的光敏检测电路
CN107478329A (zh) * 2017-08-31 2017-12-15 京东方科技集团股份有限公司 测光模块、测光电路和电子设备

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114170990A (zh) * 2021-12-06 2022-03-11 武汉天马微电子有限公司 显示面板及其环境光检测驱动方法、显示装置
CN114170990B (zh) * 2021-12-06 2022-12-13 武汉天马微电子有限公司 显示面板及其环境光检测驱动方法、显示装置

Also Published As

Publication number Publication date
CN107478329B (zh) 2019-09-17
CN107478329A (zh) 2017-12-15
US10935422B2 (en) 2021-03-02
US20190178712A1 (en) 2019-06-13

Similar Documents

Publication Publication Date Title
CN108280432B (zh) 指纹识别检测电路及其驱动方法、显示装置
JP7145201B2 (ja) フォトセンサーにおける高強度光を検出すること
WO2019041814A1 (zh) 测光模块、测光电路和电子设备
JP4814028B2 (ja) 液晶表示装置
CN110444158B (zh) 像素驱动电路及其驱动方法、显示面板及显示装置
KR101022118B1 (ko) 광 감지회로 및 그 구동방법과 이를 구비한 터치 스크린 패널
WO2015014147A1 (zh) 像素电路、有机电致发光显示面板及显示装置
CN108447443B (zh) 像素电路及驱动方法、显示装置
US20110006311A1 (en) Photosensitive structure and apparatus including such a structure
US11006062B2 (en) Pixel sensing circuit and driving method thereof, image sensor and electronic device
TW201032107A (en) Active pixel sensor and method for making same
US20200234639A1 (en) A pixel circuit, a driving method thereof and a display apparatus
US20190237591A1 (en) Light detecting device, light detecting method and display device
CN108303176B (zh) 一种光传感器、光检测方法和显示装置
CN101556962B (zh) 包括具有两个栅极的感应晶体管的图像传感器及操作方法
US20210209326A1 (en) Detection circuit, skin print recognition device and driving method
CN110460786B (zh) 像素感应电路、第一偏置电压确定方法、电子设备
TW201644264A (zh) 感光電路及其控制方法
US10757354B2 (en) Pixel sensing circuit and driving method thereof, image sensor and electronic device
JP2010271194A (ja) 光検出装置
CN109671384B (zh) 终端及用于终端的感光检测方法
CN109470283B (zh) 探测电路及其驱动方法、基板、探测器
US11808624B2 (en) Method for measuring ambient light and corresponding integrated device
JP4859638B2 (ja) 表示装置
KR101415725B1 (ko) 표시 장치와 그 구동 방법

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18851624

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18851624

Country of ref document: EP

Kind code of ref document: A1

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 17/09/2020)

122 Ep: pct application non-entry in european phase

Ref document number: 18851624

Country of ref document: EP

Kind code of ref document: A1