WO2019041367A1 - 一种线圈的制造方法、线圈、电子设备 - Google Patents

一种线圈的制造方法、线圈、电子设备 Download PDF

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Publication number
WO2019041367A1
WO2019041367A1 PCT/CN2017/100548 CN2017100548W WO2019041367A1 WO 2019041367 A1 WO2019041367 A1 WO 2019041367A1 CN 2017100548 W CN2017100548 W CN 2017100548W WO 2019041367 A1 WO2019041367 A1 WO 2019041367A1
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Prior art keywords
coil
metal
layer
manufacturing
seed layer
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PCT/CN2017/100548
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English (en)
French (fr)
Inventor
邹泉波
王喆
宋青林
邱冠勳
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歌尔股份有限公司
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Priority to US16/643,443 priority Critical patent/US20200365320A1/en
Publication of WO2019041367A1 publication Critical patent/WO2019041367A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • H01F41/041—Printed circuit coils
    • H01F41/043—Printed circuit coils by thick film techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • H01F41/041—Printed circuit coils
    • H01F41/042—Printed circuit coils by thin film techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H01F27/2804—Printed windings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • H01F41/12—Insulating of windings
    • H01F41/127—Encapsulating or impregnating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F5/00—Coils
    • H01F5/003—Printed circuit coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F5/00—Coils
    • H01F5/06—Insulation of windings

Definitions

  • the present invention relates to the field of processing and manufacturing of devices, and more particularly to a manufacturing process of a coil; the present invention also relates to a coil obtained by applying the above manufacturing method; and an electronic device using the above coil.
  • Coils are common components in modern electronic products, and can be applied to sounding devices such as speakers and receivers; in addition, they can be applied to motors, inductors, transformers, loop antennas, and applications such as smart phones, smart phones.
  • a method of manufacturing a coil comprising the steps of:
  • the laser light is transmitted through the laser-transmissive substrate and acts on the polymer protective layer to detach the laser-transmissive substrate.
  • the polymer protective layer is formed on the laser-transmissive substrate by spin coating, spraying or lamination, and after the polymer protective layer is cured, a metal seed layer is formed on the polymer protective layer.
  • the polymer protective layer is made of polyimide, benzocyclobutene, polybenzoxazole, epoxy resin, silica gel, parylene, polyamide or polyurethane.
  • the metal seed layer is formed on the polymer protective layer by physical vapor deposition.
  • the metal seed layer has a thickness of 0.05-5 um.
  • the metal plating layer has a thickness of 5 to 200 um.
  • the mask is a photoresist.
  • the encapsulating layer is made of polyimide, benzocyclobutene, polybenzoxazole, epoxy resin, silica gel, parylene, polyamide or polyurethane.
  • Ethyl ester which is formed on the metal coil by spin coating, spraying or lamination.
  • the top of the encapsulation layer is 1-25 ⁇ m above the top of the metal coil.
  • an external pad of the metal coil is formed on the polymer protective layer by steps b) to d).
  • an electronic device comprising the above-described coil.
  • the manufacturing method of the present invention can produce a coil having a small size by depositing a metal seed layer in advance and then forming a metal plating layer on the metal seed layer, and there is no problem that the coil is cracked or detached.
  • each process step is a mature process, suitable for mass production, and the cost is controllable. Through the control of each process, the spacing between the coils and the coil size can be reasonably selected to ensure the performance of the coil when it is used at medium and high frequencies.
  • 1 to 8 are process flow diagrams of the manufacturing method of the present invention.
  • the present invention provides a method of manufacturing a coil and a coil obtained by the manufacturing method, and the volume of the coil can be made small by the above-described manufacturing method; the manufacturing method is low in cost, and the process of each step is mature, Suitable for mass production.
  • the coil obtained by the manufacturing method has controllable spacing between the coils, and the coil has small internal resistance, small heat loss, and excellent electrical and thermal conductivity.
  • the coil can be applied to various electronic devices, for example, to low-power, medium-power or even high-power wireless charging fields, such as in the field of charging of smart phones, smart watches or other wearable electronic devices.
  • FIG. 1 to 8 show a process flow diagram of a manufacturing method of the present invention. Specifically, the following steps are included:
  • the substrate of the present invention is selected from a laser-transmissive material such as glass, sapphire or other laser-transmissive materials well known to those skilled in the art, so that subsequent gel removal or stripping can be performed by laser.
  • the polymeric protective layer 2 can provide a stable substrate for subsequent metal deposition, photolithography, and electroplating.
  • the polymer protective layer 2 may be a high temperature resistant polymer material, for example, polyimide, benzocyclobutene, polybenzoxazole, epoxy resin, silica gel, parylene, polyamide or polyamino group. Material such as ethyl formate. In the molding process, it may be formed on the laser-transmissive substrate 1 by spin coating, spray coating, lamination, or other means well known to those skilled in the art.
  • the polymer protective layer 2 is formed on the laser-transmissive substrate 1, and after it is cured, a metal seed layer 3 is formed on the surface of the polymer protective layer 2 to prevent the metal seed layer 3 from being bonded to the polymer.
  • the metal seed layer 3 of the present invention is preferably made of copper.
  • the metal seed layer 3 may be formed on the cured polymer protective layer 2 by physical vapor deposition (PVD), such as vacuum evaporation, sputter coating, arc plasma plating, ion plating or molecular beam epitaxy. Etc., these processes are common knowledge of those skilled in the art and will not be specifically described herein.
  • PVD physical vapor deposition
  • a thin metal seed layer 3 can be formed on the polymer protective layer 2 by physical vapor deposition (PVD).
  • PVD physical vapor deposition
  • the metal seed layer 3 can have a thickness of 0.05-5 ⁇ m. . It should be noted here that if the metal seed layer 3 deposited in this step is too thick, the problem of cracking or peeling of the metal seed layer 3 occurs, and the cost is also high, which is not suitable for mass production.
  • the mask 4 of the present invention may be a photoresist, and of course other materials well known to those skilled in the art may be used, and will not be specifically described herein.
  • the mask 4 is patterned according to actual needs.
  • a coil-like pattern 40 is formed on the mask 4, and the metal seed layer 3 below the position of the pattern 40 is exposed.
  • a plurality of coil-like patterns 40 may be formed on the mask 4 to simultaneously form a plurality of metal coils on the metal seed layer 3 in a subsequent process.
  • the specific amount needs to be determined according to the size of the laser-transmissive substrate 1 and the metal coil.
  • an 8-inch transparent laser substrate 1 is used, and the subsequently formed coil has an outer diameter of 48 mm. No more than 10 coils can be formed on the laser-transmissive substrate 1 of this size at the same time.
  • a thick metal plating layer 5 may be formed in the region of the metal seed layer 3 by electroplating or electroless plating, and the metal plating layer 5 may be combined with the metal seed layer.
  • the material of 3 is the same, for example, copper is selected.
  • the metal plating layer 5 may have a thickness of 5 to 200 ⁇ m, the metal plating layer 5 may have a line width of 80 ⁇ m, and the line spacing may be 20 ⁇ m.
  • the metal seed layer 3 overlying the polymer protective layer 2 is integrally coated, it is necessary to remove the metal seed layer 3 between the mask 4 and the coil-shaped metal plating layer 5 to form A coil of metal coil 6 in a circle. It can also be understood that the metal seed layer 3 located directly under the metal plating layer 5 is left, and the metal seed layer 3 located directly under the mask 4 is removed.
  • the photoresist when the mask 4 selects the photoresist, the photoresist can be removed by wet etching by acetone or an etching solution well known to those skilled in the art.
  • the metal seed layer 3 when the metal seed layer 3 is made of a copper material, it can be removed by a copper etching solution, such as glacial acetic acid and hydrogen peroxide. This is a common knowledge of those skilled in the art and will not be specifically described herein.
  • the encapsulating layer 8 may be made of the same material as the polymer protective layer 2, or may be made of a different material.
  • the encapsulation layer 8 may be made of polyimide or benzocyclobutene. Polybenzoxazole, epoxy resin, silica gel, parylene, polyamide or polyurethane. In the molding process, it may be formed on the metal coil 6 by spin coating, spray coating, lamination or other means known to those skilled in the art to encapsulate the metal coil 6.
  • the top of the encapsulation layer 8 is 1-25 ⁇ m above the top of the metal coil 6.
  • the laser light is transmitted through the above-mentioned laser-transmissive substrate 1, and then applied to the polymer protective layer 2 to detach the laser-transmissive substrate 1.
  • the laser light is passed through the laser-transmissive substrate 1 and acts on the polymer protective layer 2, so that the laser-transmissive substrate 1 and the polymer protective layer 2 are lost in viscosity. Disengaged to achieve laser degumming or laser stripping.
  • the final metal coil package structure is bonded to the tape 9.
  • the rubber surface of the tape 9 can be made to lose its viscosity (or the viscosity becomes very low) after UV exposure, so that the metal coil package can be It is picked up from the tape 9. For example, it can be picked up by a vacuum nozzle and delivered to an assembly station.
  • the manufacturing method of the present invention can produce a coil having a small size by depositing a metal seed layer in advance and then forming a metal plating layer on the metal seed layer, and there is no problem that the coil is cracked or detached.
  • each process step is a mature process, suitable for mass production, and the cost is controllable. Through the control of each process, the spacing between the coils and the coil size can be reasonably selected to ensure the performance of the coil when it is used at medium and high frequencies.
  • the external pads 7 of the metal coil 6 can also be formed on the polymer protective layer 2 by the above steps b) to d).
  • the metal plating layer 5 is formed by electroplating or electroless plating. Forming an outer shape of the external pad on the exposed metal seed layer 3 in the region of the external pad; then in step d), removing the mask 4 and the metal seed layer 3 at the corresponding positions, and finally forming for access External pad 7 of the external line.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Manufacturing Cores, Coils, And Magnets (AREA)

Abstract

一种线圈的制造方法、线圈、电子设备，该制造方法包括：首先在聚合物保护层（2）的上方形成金属种子层（3）；在金属种子层（3）的表面形成掩膜（4）；在露出的金属种子层（3）上形成线圈状的金属镀层（5）；将掩膜（4）以及位于线圈状金属镀层（5）之间的金属种子层（3）去除，得到金属线圈（6）；在金属线圈（6）的上方形成封装层（8），以将金属线圈（6）封装起来；将封装层（8）贴装在胶带（9）上后，使激光透过透激光衬底（1）并作用在聚合物保护层（2）上，以使透激光衬底（1）脱离。该制造方法，各个工艺步骤均是成熟的制程，适合批量化生产，而且成本可控。通过对各工艺制程的控制，可以合理选择线圈之间的间距以及线圈尺寸，保证了该线圈在中高频使用时的性能。

Description

一种线圈的制造方法、线圈、电子设备 技术领域
本发明涉及器件的加工制造领域，更具体地，涉及一种线圈的制造工艺；本发明还涉及一种应用上述制造方法得到的线圈；以及采用上述线圈的电子设备。
背景技术
线圈是现代电子产品中常见的部件，其可以应用到扬声器、受话器等发声装置中；除此之外，其还可以应用到马达、电感、变压器、环形天线中，以及应用到例如智能手机、智能手表，或其它可穿戴电子设备的无线充电领域。
随着科技的发展，传统的线圈由于其体积大、内阻高、质量大，已经不能满足现代电子产品的轻薄化需求。而且由于线圈对工作参数的要求以及其较为特殊的结构，采用常规的微电子技术难以在平面衬底上制作高性能的微型化线圈。
发明内容
本发明的一个目的是提供一种线圈的制造方法的新技术方案。
根据本发明的第一方面，提供了一种线圈的制造方法，包括以下步骤：
a)在透激光衬底上形成聚合物保护层，在聚合物保护层的上方形成金属种子层；
b)在金属种子层的表面形成掩膜；对掩膜进行线圈状的图案化处理，并将图案位置下方的金属种子层露出；
c)进行电镀或者化学镀，在露出的金属种子层上形成线圈状的金属镀层；
d)将掩膜以及位于线圈状金属镀层之间的金属种子层去除，得到金 属线圈；
e)在金属线圈的上方形成封装层，以将金属线圈封装起来；
f)将封装层贴装在胶带上后，使激光透过所述透激光衬底并作用在聚合物保护层上，以使透激光衬底脱离。
可选地，所述聚合物保护层通过旋涂、喷涂或者层压的方式形成在透激光衬底上，待聚合物保护层固化后，在聚合物保护层的上方形成金属种子层。
可选地，所述聚合物保护层采用聚酰亚胺、苯并环丁烯、聚苯并恶唑、环氧树脂、硅胶、聚对二甲苯、聚酰胺或聚氨基甲酸乙酯。
可选地，所述步骤a)中，金属种子层通过物理气相沉积的方式形成在聚合物保护层上。
可选地，所述金属种子层的厚度为0.05-5um。
可选地，所述步骤c)中，金属镀层的厚度为5-200um。
可选地，所述掩膜为光刻胶。
可选地，所述步骤e)中，封装层的材质采用聚酰亚胺、苯并环丁烯、聚苯并恶唑、环氧树脂、硅胶、聚对二甲苯、聚酰胺或聚氨基甲酸乙酯，其通过旋涂、喷涂或者层压的方式形成在金属线圈上。
可选地，所述封装层的顶部高于金属线圈顶部1-25μm。
可选地，通过步骤b)至步骤d)，在所述聚合物保护层上形成金属线圈的外接焊盘。
根据本发明的另一方面，还提供了一种使用上述制造方法所制造出的线圈。
根据本发明的另一方面，还提供了一种电子设备，包含上述的线圈。
本发明的制造方法与现有技术相比，通过预先沉积金属种子层，之后在金属种子层上形成金属镀层的方式，可以生产出尺寸微小的线圈，而且不会出现线圈龟裂或者脱离的问题。本发明的制造方法，各个工艺步骤均是成熟的制程，适合批量化生产，而且成本可控。通过对各工艺制程的控制，可以合理选择线圈之间的间距以及线圈尺寸，保证了该线圈在中高频使用时的性能。
通过以下参照附图对本发明的示例性实施例的详细描述，本发明的其它特征及其优点将会变得清楚。
附图说明
被结合在说明书中并构成说明书的一部分的附图示出了本发明的实施例，并且连同其说明一起用于解释本发明的原理。
图1至图8是本发明制造方法的工艺流程图。
具体实施方式
现在将参照附图来详细描述本发明的各种示例性实施例。应注意到：除非另外具体说明，否则在这些实施例中阐述的部件和步骤的相对布置、数字表达式和数值不限制本发明的范围。
以下对至少一个示例性实施例的描述实际上仅仅是说明性的，决不作为对本发明及其应用或使用的任何限制。
对于相关领域普通技术人员已知的技术、方法和设备可能不作详细讨论，但在适当情况下，所述技术、方法和设备应当被视为说明书的一部分。
在这里示出和讨论的所有例子中，任何具体值应被解释为仅仅是示例性的，而不是作为限制。因此，示例性实施例的其它例子可以具有不同的值。
应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步讨论。
本发明提供了一种线圈的制造方法以及通过该制造方法得到的线圈，通过上述的制造方法，可以使线圈的体积可以做到很小；该制造方法的成本低廉，而且各步骤的制程成熟，适合批量化生产。
通过该制造方法得到的线圈，线圈之间的间距可控，而且线圈的内阻小、热损耗小，导电导热性能优良。该线圈可以应用到各电子设备中，例如应用到低功率、中功率甚至高功率的无线充电领域，比如智能手机、智能手表或者其它可穿戴电子设备的充电领域中等等。
图1至图8示出了本发明制造方法的工艺流程图。具体地，包括以下步骤：
a)首先在透激光衬底1上形成聚合物保护层2，之后在聚合物保护层2上形成金属种子层3；
参考图1，本发明的衬底选用透激光的材质，例如玻璃、蓝宝石或者本领域技术人员所熟知的其它透激光材料，使得后续可以通过激光的方式进行去胶或者剥离。聚合物保护层2可以为后续的金属沉积、光刻和电镀提供一个稳定的基底。
聚合物保护层2可以采用耐高温的聚合物材料，例如可以采用聚酰亚胺、苯并环丁烯、聚苯并恶唑、环氧树脂、硅胶、聚对二甲苯、聚酰胺或聚氨基甲酸乙酯等材质。在成型工艺中，其可以通过旋涂、喷涂、层压或者本领域技术人员所熟知的其它方式形成在透激光衬底1上。
优选的是，聚合物保护层2形成在透激光衬底1上，待其固化后，再在聚合物保护层2的表面形成金属种子层3，以避免金属种子层3被粘结在聚合物保护层2的内部。
铜材质具备优良的导电、导热性能，而且其成本也较为低廉。因此，本发明的金属种子层3优选采用铜材质。参考图2，金属种子层3可以通过物理气相沉积(PVD)的方式形成在经过固化的聚合物保护层2上，例如真空蒸镀、溅射镀膜、电弧等离子体镀、离子镀膜或者分子束外延等，这些工艺均属于本领域技术人员的公知常识，在此不再具体说明。
通过物理气相沉积(PVD)的方式可以在聚合物保护层2上形成一层较薄的金属种子层3，例如在本发明一个具体的实施方式中，金属种子层3的厚度可以为0.05-5μm。在此需要注意的是，如果此步骤中沉积的金属种子层3过厚，就会发生金属种子层3龟裂或剥离的问题，而且成本也较高，不适合批量化生产。
b)在金属种子层3的表面形成掩膜4，并对掩膜4进行线圈状的图案化处理，并将图案位置下方的金属种子层3露出；
参考图3，本发明的掩膜4可以采用光刻胶，当然也可以采用本领域技术人员所熟知的其它材质，在此不再具体说明。
具体地，将掩膜4形成在金属种子层3的表面后，根据实际的需要，对掩膜4进行图案化处理。在该实施例中，在掩膜4上形成的是线圈状的图案40，并且将图案40位置下方的金属种子层3露出。
在此需要注意的是，为了实现批量化的生产，可以在掩膜4上形成多个线圈状的图案40，以便在后续工艺中同时在金属种子层3上形成多个金属线圈。具体的数量需要根据透激光衬底1以及金属线圈的尺寸而定，例如在本发明一个具体的实施中，采用8英寸的透激光衬底1，后续形成的线圈的外径为48㎜，则可同时在该尺寸的透激光衬底1上形成不超过10个线圈。
c)进行电镀或者化学镀，在露出的金属种子层3上形成线圈状的金属镀层5；
参考图4，由于在衬底上形成了金属种子层3，因此可通过电镀或者化学镀的工艺，在金属种子层3的区域形成较厚的金属镀层5，该金属镀层5可以与金属种子层3的材质相同，例如均选择铜材质。金属镀层5的厚度可以为5-200μm，金属镀层5的线宽可以为80μm，线间距可以为20微米。
d)将掩膜4以及位于线圈状金属镀层5之间的金属种子层3去除，得到金属线圈6；
参考图5，由于覆盖在聚合物保护层2上的金属种子层3是整体涂覆的，因此需要将掩膜4以及呈线圈状的金属镀层5之间的金属种子层3去除掉，才能形成一圈圈的金属线圈6。也可以理解为，保留位于金属镀层5正下方的金属种子层3，将位于掩膜4正下方的金属种子层3去除。
具体地，例如当掩膜4选择光刻胶时，可以通过丙酮或者本领域技术人员所熟知的腐蚀液将光刻胶通过湿法腐蚀去除。当金属种子层3选用铜材质时，可通过铜腐蚀液进行去除，例如冰醋酸和双氧水等，这属于本领域技术人员的公知常识，在此不再具体说明。
e)在金属线圈6的上方形成封装层8，以将金属线圈6封装起来；
参考图6，封装层8可以采用与聚合物保护层2相同的材质，也可以采用与其不同的材质。例如所述封装层8可以采用聚酰亚胺、苯并环丁烯、 聚苯并恶唑、环氧树脂、硅胶、聚对二甲苯、聚酰胺或聚氨基甲酸乙酯等材质。在成型工艺中，其可以通过旋涂、喷涂、层压或者本领域技术人员所熟知的其它方式形成在金属线圈6上，从而将金属线圈6封装起来。
在本发明一个具体的实施方式中，所述封装层8的顶部高于金属线圈6顶部1-25μm。
f)将封装层8贴装在胶带9上后，使激光透过上述的透激光衬底1后，作用在聚合物保护层2上，以将透激光衬底1脱离。
参考图7，将封装层8粘接在胶带9上后，使激光通过透激光衬底1，并作用在聚合物保护层2上，使透激光衬底1与聚合物保护层2失去粘性从而脱离开来，以达到激光去胶或者激光剥离的作用。
最后的金属线圈封装结构粘接在胶带9上，当需要使用的时候，胶带9的胶面在UV曝光后，可使其失去粘性(或粘性变得很低)，这样金属线圈的封装就可以从胶带9上被拾取起来。例如可以通过真空吸嘴进行拾取，并输送到装配工位上。
本发明的制造方法与现有技术相比，通过预先沉积金属种子层，之后在金属种子层上形成金属镀层的方式，可以生产出尺寸微小的线圈，而且不会出现线圈龟裂或者脱离的问题。本发明的制造方法，各个工艺步骤均是成熟的制程，适合批量化生产，而且成本可控。通过对各工艺制程的控制，可以合理选择线圈之间的间距以及线圈尺寸，保证了该线圈在中高频使用时的性能。
在本发明一个优选的实施方式中，通过上述的步骤b)至步骤d)，在所述聚合物保护层2上还可以形成金属线圈6的外接焊盘7。例如在步骤b)中，对掩膜4进行图案化处理的时候，需要在掩膜4上形成外接焊盘7的形状；在步骤c)中，在通过电镀或者化学镀形成金属镀层5的同时，在外接焊盘的区域，在露出的金属种子层3上形成外接焊盘的外形；之后在步骤d)中，将相应位置的掩膜4以及金属种子层3去除，最终形成用于接入外部线路的外接焊盘7。
在此需要注意的是，由于外接焊盘7用于焊接外部的线路，因此，在步骤e)的封装工序中，需要将外接焊盘7露出，参考图6。
虽然已经通过例子对本发明的一些特定实施例进行了详细说明，但是本领域的技术人员应该理解，以上例子仅是为了进行说明，而不是为了限制本发明的范围。本领域的技术人员应该理解，可在不脱离本发明的范围和精神的情况下，对以上实施例进行修改。本发明的范围由所附权利要求来限定。

Claims (12)

  1. 一种线圈的制造方法，其特征在于，包括以下步骤：
    a)在透激光衬底上形成聚合物保护层，在聚合物保护层的上方形成金属种子层；
    b)在金属种子层的表面形成掩膜；对掩膜进行线圈状的图案化处理，并将图案位置下方的金属种子层露出；
    c)进行电镀或者化学镀，在露出的金属种子层上形成线圈状的金属镀层；
    d)将掩膜以及位于线圈状金属镀层之间的金属种子层去除，得到金属线圈；
    e)在金属线圈的上方形成封装层，以将金属线圈封装起来；
    f)将封装层贴装在胶带上后，使激光透过所述透激光衬底并作用在聚合物保护层上，以使透激光衬底脱离。
  2. 根据权利要求1所述的制造方法，其特征在于：所述聚合物保护层通过旋涂、喷涂或者层压的方式形成在透激光衬底上，待聚合物保护层固化后，在聚合物保护层的上方形成金属种子层。
  3. 根据权利要求1或2所述的制造方法，其特征在于：所述聚合物保护层采用聚酰亚胺、苯并环丁烯、聚苯并恶唑、环氧树脂、硅胶、聚对二甲苯、聚酰胺或聚氨基甲酸乙酯。
  4. 根据权利要求1至3任一项所述的制造方法，其特征在于：所述步骤a)中，金属种子层通过物理气相沉积的方式形成在聚合物保护层上。
  5. 根据权利要求1至4任一项所述的制造方法，其特征在于：所述金属种子层的厚度为0.05-5um。
  6. 根据权利要求1至5任一项所述的制造方法，其特征在于：所述步骤c)中，金属镀层的厚度为5-200um。
  7. 根据权利要求1至6任一项所述的制造方法，其特征在于：所述掩膜为光刻胶。
  8. 根据权利要求1至7任一项所述的制造方法，其特征在于：所述 步骤e)中，封装层的材质采用聚酰亚胺、苯并环丁烯、聚苯并恶唑、环氧树脂、硅胶、聚对二甲苯、聚酰胺或聚氨基甲酸乙酯，其通过旋涂、喷涂或者层压的方式形成在金属线圈上。
  9. 根据权利要求1至8任一项所述的制造方法，其特征在于：所述封装层的顶部高于金属线圈顶部1-25μm。
  10. 根据权利要求1至9任一项所述的制造方法，其特征在于：通过步骤b)至步骤d)，在所述聚合物保护层上形成金属线圈的外接焊盘。
  11. 一种使用根据权利要求1至10任一项所述的制造方法所制造出的线圈。
  12. 一种电子设备，包含根据权利要求11所述的线圈。
PCT/CN2017/100548 2017-08-30 2017-09-05 一种线圈的制造方法、线圈、电子设备 WO2019041367A1 (zh)

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