WO2019039066A1 - Substrate treatment device - Google Patents

Abstract

This substrate treatment device (1) has a first holding unit (2) provided with a through-hole (21). The through-hole (21) has an upper opening (22) through which a substrate (9) can pass. A portion of the inner peripheral surface (24) of the through-hole (21) has a smaller diameter than the substrate (9). The first holding unit (2) holds the substrate (9) in a horizontal state as the inner peripheral surface (24) of the through-hole (21) contacts the outer edge part of the substrate (9) from below. A treatment solution supply unit (4) supplies a treatment solution to the upper surface (91) of the substrate (9). The treatment solution supplied from the treatment solution supply unit (4) is retained in a retention space (20) defined by the upper surface (91) of the substrate (9) held by the first holding unit (2) below the upper end of the through-hole (21) and the inner peripheral surface (24) of the through-hole (21). The treatment solution in the retention space (20) flows downward from between the substrate (9) and inner peripheral surface (24) of the through-hole (21) so as to be received by a lower solution-receiving unit (6). In this substrate treatment device (1), the discharge path of the treatment solution can be properly cleaned.

Description

Substrate processing equipment

The present invention relates to technology for processing a substrate.

Conventionally, in the process of manufacturing a semiconductor substrate (hereinafter simply referred to as a “substrate”), various treatments are performed on the substrate. For example, Japanese Patent Application Laid-Open Nos. 2012-92390 (Document 1) and 2013-10996 (Document 2) disclose a plating treatment apparatus that supplies a plating solution onto a substrate to carry out a plating treatment.

In the plating apparatus described in Document 1, first, a palladium-containing displacement plating solution is supplied to a rotating substrate, and the substrate is plated with palladium. Subsequently, after the substrate is rinsed, the chemical reduction plating solution is supplied to the rotating substrate, and the substrate is plated. In the substrate processing apparatus, the plating processing solution supplied onto the substrate is scattered from the outer edge of the substrate to the periphery by the rotation of the substrate, received by the cup, and discharged out of the apparatus.

In the plating processing apparatus of Document 2, the substrate rotation is stopped in a state where the plating solution is continuously supplied to the substrate, and after an incubation step of performing initial film formation on the substrate is performed, the substrate is rotated to grow the plating film. A plating film growth step is performed.

By the way, in the plating processing apparatus of the reference 1 and the reference 2, the cup in which three discharge ports are stacked is arranged around the substrate rotation holding means, and the plating solution scattered from the rotating substrate is received by the cup. In the cup, since the space between the plurality of stacked discharge ports is narrow, there is a possibility that the inside of the cup which is the discharge path of the plating solution can not be easily cleaned.

The present invention is directed to a substrate processing apparatus for processing a substrate, and it is an object of the present invention to preferably perform cleaning of a discharge path of a processing liquid.

In a substrate processing apparatus according to a preferred embodiment of the present invention, a through hole is provided which has an upper opening through which a substrate can pass and a diameter of a part of the inner peripheral surface is smaller than that of the substrate. A first holding portion for holding the substrate in a horizontal state by bringing a circumferential surface into contact with the outer edge portion of the substrate from below, a second holding portion positioned below the through hole, and the second holding portion A holding unit moving mechanism for bringing the second holding unit into contact with the lower surface of the substrate by moving upward through a hole, and delivering the substrate from the first holding unit to the second holding unit; A processing liquid supply unit for supplying a processing liquid onto the upper surface of the substrate, and a lower liquid receiving unit positioned below the through hole. The treatment liquid supplied from the treatment liquid supply unit is surrounded by the upper surface of the substrate held by the first holding unit and the inner circumferential surface of the through hole below the upper end of the through hole. It is stored in the storage space. When the substrate is transferred from the first holding unit to the second holding unit, the processing liquid in the storage space flows downward from between the substrate and the inner circumferential surface of the through hole and is lowered. Received by the receiver. According to the substrate processing apparatus, the discharge path of the processing liquid can be suitably cleaned.

Preferably, the substrate processing apparatus further includes a cleaning unit that cleans the lower liquid receiving unit.

Preferably, the substrate processing apparatus receives a processing solution scattering around from the substrate rotating with the second holding unit, and a rotation mechanism that rotates the second holding unit above the upper end of the through hole. And an upper liquid receiver.

More preferably, the upper liquid receiving portion includes a first upper liquid receiving portion that protrudes upward from the first holding portion continuously to the first holding portion.

More preferably, the upper liquid receiving portion further includes a second upper liquid receiving portion that receives the processing liquid scattering from the substrate radially outward and above the first upper liquid receiving portion.

Preferably, the lower liquid receiving portion is disposed below the through hole, and the first lower liquid receiving portion receives the processing liquid flowing downward from between the substrate and the inner peripheral surface of the through hole. And the substrate and the through hole in a state of being disposed radially inward of the first lower liquid receiving portion below the through hole and closing an upper opening of the first lower liquid receiving portion. And a second lower liquid receiving portion for receiving the processing liquid flowing downward from between the inner peripheral surface and the lower inner surface.

Preferably, the processing solution stored in the storage space is a plating solution used for the electroless plating process of the substrate.

The above objects and other objects, features, aspects and advantages of the present invention will become apparent from the detailed description of the present invention given below with reference to the attached drawings.

It is a longitudinal cross-sectional view of the substrate processing apparatus concerning a 1st embodiment. It is a longitudinal cross-sectional view of a substrate processing apparatus. It is a figure which shows the flow of a process of a board | substrate. It is a longitudinal cross-sectional view of a substrate processing apparatus. It is a longitudinal cross-sectional view of a substrate processing apparatus. It is a longitudinal cross-sectional view of a substrate processing apparatus. It is a figure which shows the structure of a plating solution unit. It is a longitudinal cross-sectional view of a trap part. It is a longitudinal cross-sectional view of another trap part. It is a longitudinal cross-sectional view of another substrate processing apparatus. It is a longitudinal cross-sectional view of another substrate processing apparatus. It is a longitudinal cross-sectional view of the substrate processing apparatus which concerns on 2nd Embodiment. It is a figure which shows the flow of a process of a board | substrate. It is a figure which shows the flow of a process of a board | substrate. It is a longitudinal cross-sectional view of a substrate processing apparatus. It is a longitudinal cross-sectional view of a substrate processing apparatus. It is a longitudinal cross-sectional view of a substrate processing apparatus. It is a longitudinal cross-sectional view of a substrate processing apparatus. It is a longitudinal cross-sectional view of a substrate processing apparatus. It is a longitudinal cross-sectional view of a substrate processing apparatus. It is a longitudinal cross-sectional view of a substrate processing apparatus. It is a longitudinal cross-sectional view of another substrate processing apparatus. It is a longitudinal cross-sectional view of another substrate processing apparatus. It is a longitudinal cross-sectional view of another substrate processing apparatus.

1 and 2 are longitudinal sectional views showing the configuration of a substrate processing apparatus 1 according to a first embodiment of the present invention. The substrate processing apparatus 1 is a sheet-fed apparatus that processes semiconductor substrates 9 (hereinafter simply referred to as "substrates 9") one by one. In the substrate processing apparatus 1, for example, a plating solution is supplied to the substrate 9, and the electroless plating process is performed on the substrate 9.

The substrate processing apparatus 1 includes a housing 11, a first holding unit 2, a second holding unit 31, a holding unit moving mechanism 32, a rotation mechanism 33, a processing liquid supply unit 4, and an upper liquid receiving unit 5. The liquid receiving unit 6 includes a cleaning unit 71, a heating unit 72 (see FIG. 4 described later), and a gas injection unit 73. The first holding unit 2, the second holding unit 31, the treatment liquid supply unit 4, the upper liquid receiving unit 5, the lower liquid receiving unit 6 and the like are accommodated in the housing 11. The first holding unit 2, the holding unit moving mechanism 32, the rotation mechanism 33, the upper liquid receiving unit 5 and the lower liquid receiving unit 6 are fixed to the housing 11. The second holding portion 31 is attached to the housing 11 so as to be movable in the vertical direction. A space in the housing 11 is, for example, a sealed space, and in the sealed space, an air flow (so-called downflow) which is directed downward from the canopy of the housing 11 is formed.

The first holding portion 2 is a substantially cylindrical portion centered on a central axis J1 facing in the vertical direction. The first holding portion 2 is provided with a through hole 21 penetrating in the vertical direction. The cross section perpendicular to the vertical direction of the through hole 21 is substantially circular around the central axis J1 at each position in the vertical direction. The through hole 21 has an upper opening 22 and a lower opening 23. The upper opening 22 is located at the upper end of the through hole 21. The lower opening 23 is located at the lower end of the through hole 21. The upper opening 22 and the lower opening 23 are substantially circular and perpendicular to the central axis J1.

The diameter of the upper opening 22 (hereinafter simply referred to as “diameter”) is larger than the diameter of the substrate 9. Thus, the substrate 9 can pass through the upper opening 22 of the through hole 21. The diameter of a part of the inner circumferential surface 24 of the through hole 21 in the vertical direction is smaller than the diameter of the substrate 9. In the example shown in FIG. 1, the diameter of the inner peripheral surface 24 of the through hole 21 (that is, the diameter of the through hole 21) gradually decreases with distance from the upper opening 22, and the upper and lower portions between the upper opening 22 and the lower opening 23 It is smaller than the diameter of the substrate 9 at a predetermined position in the direction. The diameter of the through hole 21 is larger than the diameter of the substrate 9 above the predetermined position, and the diameter of the through hole 21 is smaller than the diameter of the substrate 9 below the predetermined position. Further, in the vicinity of the lower opening 23, the diameter of the through hole 21 is substantially constant in the vertical direction, and is smaller than the diameter of the substrate 9. As shown in FIG. 1, the first holding unit 2 brings the inner peripheral surface 24 of the through hole 21 into contact with the outer edge portion of the substrate 9 from below to hold the substrate 9 in a substantially horizontal state. The outer edge portion of the substrate 9 contacts the inner circumferential surface 24 of the first holding portion 2 over substantially the entire circumference.

The second holding unit 31 is located below the through hole 21 of the first holding unit 2 and below the substrate 9. The second holding unit 31 includes a chuck unit 311 and a support unit 312. The chuck portion 311 is a substantially disc-shaped portion centered on the central axis J1. The diameter of the chuck portion 311 is smaller than the minimum diameter of the through hole 21 of the first holding portion 2 (the diameter of the lower opening 23 in the example shown in FIG. 1) and the diameter of the substrate 9. The chuck portion 311 is provided with a vacuum chuck mechanism (not shown) capable of attracting and holding the lower surface of the substrate 9. The support portion 312 is a substantially cylindrical portion connected to the lower surface central portion of the chuck portion 311 and supporting the chuck portion 311 from below.

The holder moving mechanism 32 is a mechanism for moving the second holder 31 in the vertical direction. The holder moving mechanism 32 is disposed, for example, below the second holder 31. The second holding portion 31 is moved upward from the retracted position shown in FIG. 1 by the holding portion moving mechanism 32 to contact the lower surface 92 of the substrate 9 held in the horizontal state by the first holding portion 2. , Suction and hold the substrate 9 from the lower side. Then, the second holding portion 31 is further moved upward through the through hole 21 by the holding portion moving mechanism 32, whereby the substrate 9 is moved from the first holding portion 2 to the second holding portion as shown in FIG. 31 and is moved upward with respect to the first holding unit 2 together with the second holding unit 31.

The rotation mechanism 33 is a mechanism that rotates the second holding unit 31 around the central axis J1. The rotation mechanism 33 is disposed, for example, below the second holding unit 31. As shown in FIG. 2, the rotation mechanism 33 rotates the second holding unit 31 and the substrate 9 in a state where the substrate 9 is separated upward from the first holding unit 2. Specifically, the rotation mechanism 33 rotates the second holding portion 31 above the upper end of the through hole 21 of the first holding portion 2.

The processing liquid supply unit 4 supplies the processing liquid onto the upper surface 91 of the substrate 9. In the example shown in FIGS. 1 and 2, the treatment liquid supply unit 4 includes a nozzle 41 disposed above the central portion of the substrate 9. The nozzle 41 is connected to a processing liquid supply source (not shown), and the processing liquid is discharged from the nozzle 41 toward the upper surface 91 of the substrate 9. In the substrate processing apparatus 1, a plurality of processing solutions are sequentially supplied from the nozzle 41 toward the substrate 9. The nozzle 41 includes a plurality of nozzle elements respectively corresponding to a plurality of types of processing solutions. Alternatively, the lower end portion of the nozzle 41 may be provided with a plurality of discharge ports respectively corresponding to a plurality of types of processing liquids.

The upper liquid receiving portion 5 is disposed outside the second holding portion 31 and the substrate 9 in the radial direction centering on the central axis J1 (hereinafter simply referred to as “radial direction”), and the second holding portion 31 And the entire circumference of the substrate 9. The upper liquid receiving portion 5 radially faces the substrate 9 held by the second holding portion 31 on the upper side of the first holding portion 2. The upper liquid receiving portion 5 receives the processing liquid scattering from the substrate 9 rotating with the second holding portion 31 to the periphery.

The upper liquid receiving part 5 includes a first upper liquid receiving part 51, a second upper liquid receiving part 52, and an external drainage part 53. The first upper liquid receiving portion 51 is a substantially cylindrical portion centered on the central axis J1. The first upper liquid receiving portion 51 protrudes upward from the upper end portion of the first holding portion 2 continuously to the first holding portion 2. The inner circumferential surface 511 of the first upper liquid receiving portion 51 is, for example, radially outward over substantially the entire circumferential direction around the central axis J1 (hereinafter simply referred to as “circumferential direction”). It is a curved surface which curves in a convex shape toward the head. The lower end of the inner peripheral surface 511 of the first upper liquid receiving portion 51 is continuous with the upper end of the inner peripheral surface 24 of the first holding portion 2.

The second upper liquid receiving portion 52 is a substantially cylindrical member centered on the central axis J1. The second upper liquid receiving portion 52 is disposed radially outward of the first upper liquid receiving portion 51 and surrounds the substrate 9 and the first upper liquid receiving portion 51 all around. The upper end portion of the second upper liquid receiving portion 52 extends above the upper end portion of the first upper liquid receiving portion 51. The second upper liquid receiving portion 52 includes a substantially cylindrical side wall portion centered on the central axis J1, and a canopy portion extending radially inward from the upper end portion of the side wall portion. The canopy may be an inclined portion directed upward as it goes radially inward. The treatment liquid received by the second upper liquid receiving portion 52 is discharged to the outside of the housing 11 through the external drainage portion 53.

The lower liquid receiving portion 6 is disposed radially inward of the first holding portion 2 and radially outward of the second holding portion 31 as shown in FIG. 1, and the entire circumference of the second holding portion 31 is Wrap around the circumference. The liquid receiving portion 6 is disposed below the through hole 21 of the first holding portion 2 and below the substrate 9 held by the first holding portion 2. The liquid receiving portion 6 includes a liquid receiving block 61 and a lower liquid discharging portion 62. The liquid receiving block 61 is a substantially cylindrical portion centered on the central axis J1. The liquid receiving block 61 is located lower than the substrate 9 held by the first holding unit 2, and vertically opposed to the lower surface 92 of the substrate 9. The upper end of the lower liquid receiving block 61 is spaced downward from the lower surface 92 of the substrate 9.

The outer peripheral surface 63 of the lower liquid receiving block 61 is an inclined surface which is directed radially outward from the upper end of the lower liquid receiving block 61 downward. The outer peripheral surface 63 of the lower liquid receiving block 61 faces the inner peripheral surface 24 in the radial direction without contacting the inner peripheral surface 24 of the first holding portion 2. The lower end of the inner peripheral surface 24 of the first holding portion 2 is located between the upper end and the lower end of the outer peripheral surface 63 of the lower liquid receiving block 61. The treatment liquid flowing downward from the gap between the first holding portion 2 and the lower liquid receiving block 61 is discharged to the outside of the housing 11 through the lower drainage portion 62.

The gas injection unit 73 injects gas from below toward the outer edge portion of the substrate 9 held by the first holding unit 2. In the example shown in FIG. 1, the gas injection unit 73 is provided in the lower liquid receiving block 61, and injects gas from the outer peripheral surface 63 of the lower liquid receiving block 61 over substantially the entire outer edge of the substrate 9. The gas injection unit 73 does not necessarily have to be provided in the lower liquid receiving block 61. For example, the gas injection unit 73 is provided below the portion of the inner peripheral surface 24 of the first holding unit 2 in contact with the outer edge portion of the substrate 9, The gas may be injected from the lower side toward the outer edge of 9. The gas injected from the gas injection unit 73 is, for example, an inert gas such as nitrogen (N ₂ ) gas. The gas from the gas injection unit 73 is not limited to the inert gas, and may be variously changed.

A heating unit 72 shown in FIG. 4 described later heats the substrate 9 held by the first holding unit 2. The heating unit 72 is, for example, an electric heater disposed above the first holding unit 2 and the second holding unit 31. In the state where the heating unit 72 is not used for heating the substrate 9, for example, the heating unit 72 retracts laterally from above the first holding unit 2 and the second holding unit 31. Therefore, illustration of the heating part 72 is abbreviate | omitted in FIG. 1 and FIG. The structure and arrangement of the heating unit 72 may be variously changed. For example, the heating unit 72 may be a light irradiation unit that irradiates the substrate 9 with light to heat it.

The cleaning unit 71 shown in FIGS. 1 and 2 supplies the cleaning liquid to the lower liquid receiving unit 6 to clean the lower liquid receiving unit 6. In the example illustrated in FIG. 1, the cleaning unit 71 is provided in a portion of the first holding unit 2 that faces the outer peripheral surface 63 of the lower liquid receiving block 61 in the radial direction. The cleaning unit 71 discharges the cleaning liquid toward the outer peripheral surface 63 of the lower liquid receiving block 61. The cleaning liquid discharged from the cleaning section 71 is supplied over substantially the entire circumference of the outer peripheral surface 63 of the lower liquid receiving block 61. The cleaning unit 71 does not necessarily have to be provided in the first holding unit 2 and may be disposed in another place.

Next, an example of the flow of processing of the substrate 9 by the substrate processing apparatus 1 will be described with reference to FIG. 4 to 6 are vertical sectional views showing the substrate processing apparatus 1 during processing of the substrate 9. When the substrate 9 is processed by the substrate processing apparatus 1, first, as shown in FIG. 2, the second holding unit 31 horizontally holds the substrate 9 (step S11). The substrate 9 held by the second holding portion 31 is positioned above the first holding portion 2 and the first upper liquid receiving portion 51, and radially faces the second upper liquid receiving portion 52.

Subsequently, rotation of the second holding unit 31 and the substrate 9 by the rotation mechanism 33 is started (step S12). Then, the catalyst solution is supplied from the processing liquid supply unit 4 to the upper surface 91 of the rotating substrate 9 (step S13). The catalyst solution is a solution containing a catalyst (for example, ions of heavy metal such as palladium (Pd)) used for electroless plating described later. In step S13, for example, a liquid columnar catalyst solution is discharged from the nozzle 41 toward the central portion of the substrate 9.

The catalyst solution supplied to the central portion of the substrate 9 moves from the central portion to the outer edge portion of the substrate 9 by centrifugal force, and is applied over the entire upper surface 91 of the substrate 9. The catalyst solution that has reached the outer edge portion of the substrate 9 is scattered to the periphery by centrifugal force and is received by the second upper liquid receiving portion 52 of the upper liquid receiving portion 5. The catalyst solution received by the second upper liquid receiving portion 52 is discharged to the outside of the housing 11 through the external drainage portion 53. The discharged catalyst solution may, for example, be recovered and reused or may be discarded. A catalyst (for example, palladium) is adsorbed on the upper surface 91 of the substrate 9 by supplying a catalyst solution to the substrate 9 (that is, applying a catalyst) for a predetermined time.

When the supply of the catalyst solution is stopped and the catalyst application process is completed, the first rinse liquid is supplied from the processing liquid supply unit 4 to the upper surface 91 of the rotating substrate 9 (step S14). The first rinse liquid is, for example, pure water. In step S14, for example, the first rinse liquid in the form of mist (that is, a large number of minute droplets that spread widely and move downward at a relatively low speed) is discharged from the nozzle 41 and supplied onto the upper surface 91 of the substrate 9. Be done. The first rinse solution supplied onto the upper surface 91 of the substrate 9 spreads radially outward by centrifugal force, whereby the catalyst solution is removed from above the substrate 9. The first rinse liquid scattering from the substrate 9 to the periphery is received by the second upper liquid receiving portion 52 of the upper liquid receiving portion 5, and is discharged to the outside of the housing 11 through the external drainage portion 53. The first rinse solution received by the second upper liquid receiving portion 52 is preferably discarded via a path different from the path for discharging the catalyst solution in step S13. Thereby, the recovery efficiency of the catalyst solution can be improved.

When the supply of the first rinse liquid to the substrate 9 (that is, the first rinse processing) is performed for a predetermined time, the supply of the first rinse liquid is stopped. Further, the rotation of the substrate 9 and the second holding unit 31 by the rotation mechanism 33 is also stopped (step S15).

Next, the second holding portion 31 is moved downward by the holding portion moving mechanism 32, and the outer edge portion of the substrate 9 contacts the inner circumferential surface 24 of the first holding portion 2. The second holding part 31 further moves downward, and as shown in FIG. 1, separates from the lower surface 92 of the substrate 9 downward. Thus, the substrate 9 is delivered from the second holding unit 31 to the first holding unit 2 and held horizontally by the first holding unit 2 below the upper end of the through hole 21 (step S16). .

When the substrate 9 is held by the first holding unit 2, gas injection is started from the gas injection unit 73 toward the outer edge portion of the substrate 9 held by the first holding unit 2. Then, the plating solution is supplied from the processing solution supply unit 4 to the upper surface 91 of the substrate 9 (step S17). The plating solution is a heavy metal (eg, nickel (Ni), copper (Cu), cobalt (Co), cobalt tungsten boron (CoWB), gold (Au) or silver (Ag)) plated on the upper surface 91 of the substrate 9). It contains ions, reducing agents and the like. In step S17, for example, a liquid columnar plating solution is discharged from the nozzle 41 toward the central portion of the substrate 9. The plating solution supplied to the central portion of the substrate 9 spreads radially outward, and the upper surface 91 of the substrate 9 is covered with the plating solution over the entire surface. On the upper surface 91 of the substrate 9 coated with the plating solution, the initial nucleus of the metal contained in the plating solution is deposited.

The plating solution supplied from the processing solution supply unit 4 is, as shown in FIG. 4, a space 20 surrounded by the upper surface 91 of the substrate 9 held by the first holding unit 2 and the inner circumferential surface 24 of the through hole 21. (Hereafter, it calls "reservoir space 20.") It is stored. In other words, the storage space 20 is a space above the upper surface 91 of the substrate 9 in the through hole 21. In the substrate processing apparatus 1, as described above, since the gas is injected from the lower side toward the outer edge portion of the substrate 9 held by the first holding unit 2, provisionally, the outer edge portion of the substrate 9 and the through hole 21 Even when a gap is present in a part of the circumferential direction with the inner circumferential surface 24, the plating solution is prevented or suppressed from leaking downward from the gap.

In the storage space 20, when the plating solution is stored to a predetermined depth, the supply of the plating solution from the nozzle 41 is temporarily stopped. The plating solution stored in the storage space 20 is in contact with the inner circumferential surface 24 of the through hole 21. The depth of the plating solution stored in the storage space 20 (that is, the distance in the vertical direction between the liquid surface of the plating solution and the upper surface 91 of the substrate 9) is substantially uniform over the entire surface of the substrate 9. The depth of the plating solution in the storage space 20 is a solution film of the plating solution which can be held on the upper surface 91 of the substrate 9 by surface tension in the substrate 9 in the state where the outer edge portion is not in contact with other members. It is called "liquid film by surface tension". In detail, the depth of the plating solution in the storage space 20 is larger than the thickness of the liquid film due to the surface tension at the outer edge of the substrate 9 and the thickness of the liquid film due to the surface tension at the central part of the substrate 9 large.

By covering the upper surface 91 of the substrate 9 with the plating solution stored in the storage space 20 for a predetermined time, a metal contained in the plating solution is formed on the upper surface 91 of the substrate 9 (specifically, formed on the upper surface 91) Layer) is formed on the substrate 9). In the substrate processing apparatus 1, the heating unit 72 heats the substrate 9 while the upper surface 91 of the substrate 9 is covered with the plating solution stored in the storage space 20. Thereby, the deposition of the metal on the upper surface 91 of the substrate 9 is promoted.

Subsequently, the second holding unit 31 is moved upward by the holding unit moving mechanism 32 to suction and hold the lower surface 92 of the substrate 9. Moreover, the injection of the gas by the gas injection part 73 is stopped. Then, the second holding unit 31 further moves upward, and as shown in FIG. 5, the substrate 9 is separated from the first holding unit 2 upward. Thus, the substrate 9 is delivered from the first holding unit 2 to the second holding unit 31 and held in the horizontal state by the second holding unit 31 (step S18). The plating solution stored in the storage space 20 flows downward from the gap between the outer edge portion of the substrate 9 and the inner peripheral surface 24 of the first holding portion 2, and the lower liquid receiving block 61 of the lower liquid receiving portion 6. Received by The plating solution received by the lower liquid receiving portion 6 flows downward along the outer peripheral surface 63 of the lower liquid receiving block 61 and is discharged to the outside of the housing 11 through the lower liquid discharging portion 62.

Then, as shown in FIG. 6, when the substrate 9 is disposed at the same position as the first upper liquid receiving portion 51 in the vertical direction, the rotation mechanism 33 starts the rotation of the substrate 9 and the second holding portion 31. (Step S19). The rotational speed of the substrate 9 in step S19 is, for example, 300 rpm to 1000 rpm. Subsequently, discharge of the liquid columnar plating solution is started from the nozzle 41 toward the central portion of the upper surface 91 of the substrate 9. The plating solution supplied to the central portion of the substrate 9 spreads radially outward on the upper surface 91 of the substrate 9 by centrifugal force, and is supplied to the entire upper surface 91 of the substrate 9. Thereby, the electroless plating process (hereinafter, simply referred to as "plating process") on the upper surface 91 of the substrate 9 proceeds (step S20).

In the substrate processing apparatus 1, the supply of the plating solution from the processing solution supply unit 4 onto the substrate 9 may be continued between steps S18 and S19. In addition, while the plating process of the substrate 9 is performed in step S20, the heating unit 72 (see FIG. 4) may heat the substrate 9 to promote the plating process as in the plating process of step S17. .

The plating solution that has reached the outer edge portion of the rotating substrate 9 is scattered by the centrifugal force to the periphery, and is received by the first upper liquid receiving portion 51 that radially faces the substrate 9. The plating solution received by the first upper liquid receiving portion 51 flows downward along the inner peripheral surface 511 of the first upper liquid receiving portion 51 and the inner peripheral surface 24 of the first holding portion 2, and the lower liquid receiving portion 6, received by the block block 61. The plating solution received by the liquid receiving portion 6 is discharged to the outside of the housing 11 through the lower liquid discharging portion 62. The discharged plating solution may be collected and reused, for example, or may be discarded. Metal is plated on the upper surface 91 of the substrate 9 by supplying a plating solution to the substrate 9 (that is, plating) for a predetermined time.

In the substrate processing apparatus 1 illustrated in FIG. 1, the plating solution discharged to the outside of the housing 11 is collected and reused for processing of the substrate 9. FIG. 7 is a view showing the structure of the plating solution unit 8 connected to the substrate processing apparatus 1. The plating solution unit 8 recovers the plating solution discharged from the housing 11 of the substrate processing apparatus 1 and supplies the plating solution to the nozzles 41 of the substrate processing apparatus 1. The plating solution unit 8 is a part of the processing solution supply source described above. The plating solution unit 8 may be part of the substrate processing apparatus 1.

The plating solution unit 8 includes a plating solution tank 81, a supply flow channel 82, a recovery flow channel 83, and a circulation flow channel 84. The plating solution tank 81 is a storage tank for storing the plating solution. The supply flow path 82 connects the plating solution tank 81 and the nozzle 41 of the substrate processing apparatus 1. The plating solution in the plating solution tank 81 is supplied to the nozzle 41 through the supply flow channel 82 and discharged from the nozzle 41 toward the upper surface 91 of the substrate 9. When the amount of the plating solution in the plating solution tank 81 decreases below a predetermined amount, the plating solution is replenished from the plating solution supply source (not shown) to the plating solution tank 81.

The circulation channel 84 branched from the middle of the supply channel 82 is connected to the plating solution tank 81. While the discharge of the plating solution from the nozzle 41 is stopped, the plating solution delivered from the plating solution tank 81 to the supply flow channel 82 is returned to the plating solution tank 81 via the circulation flow channel 84. By circulating the plating solution using the circulation flow path 84, the uniformity of the components and temperature of the plating solution stored in the plating solution tank 81 can be improved.

The recovery flow path 83 connects the plating solution tank 81 and the lower drainage portion 62 of the substrate processing apparatus 1. In detail, the recovery flow path 83 is connected to the lower drainage portion 62 via the trap portion 45 of the substrate processing apparatus 1. The plating solution drained from the lower drainage portion 62 to the outside of the housing 11 is led to the plating solution tank 81 via the trap portion 45 and the recovery flow path 83, and is recovered in the plating solution tank 81. The recovered plating solution is supplied again to the nozzle 41 through the supply flow channel 82.

FIG. 8 is a longitudinal sectional view showing the structure of the trap portion 45. As shown in FIG. The trap unit 45 includes a trap tank 451 and a partition wall 452. The trap tank 451 is a substantially cylindrical closed container extending in the vertical direction, and is filled with a plating solution. The partition wall 452 is provided inside the trap tank 451. The partition wall 452 extends downward from the upper end of the trap tank 451. The lower end of the partition wall 452 is separated upward from the lower end of the trap tank 451.

The partition wall 452 divides the space from the upper end to the lower part of the internal space of the trap tank 451 into two spaces. In the following description, a space extending in the vertical direction on the left side of the partition wall 452 in FIG. 8 is referred to as a “first flow path 454”. A space extending in the vertical direction on the right side of the partition wall 452 in FIG. 8 is referred to as a “second flow path 455”. The lower drainage portion 62 is connected to the upper end of the first flow path 454. The lower portion of the first flow passage 454 is continuous with the lower portion of the second flow passage 455 below the partition wall 452. The lower portion of the first flow passage 454 is an inclined flow passage approaching the second flow passage 455 as it goes downward. The recovery flow path 83 of the plating solution unit 8 is connected to the upper end of the second flow path 455.

The lower end portion of the trap tank 451 is provided with a substantially cylindrical lower recess 453 extending in the vertical direction. The lower recess 453 is located below the first flow passage 454 and the second flow passage 455. The lower recess 453 protrudes downward from a portion where the lower portion of the first flow passage 454 and the lower portion of the second flow passage 455 are continuous in the trap tank 451. In the example shown in FIG. 8, the lower recess 453 is located vertically below the second flow passage 455. The lower recess 453 is connected to the lower portion of the first flow passage 454 and the lower portion of the second flow passage 455. The boundary between the lower recess 453 and the lower sloped flow passage of the first flow passage 454 is a stepped portion that bends vertically downward from the sloped flow passage.

In the substrate processing apparatus 1, the plating solution discharged to the outside of the housing 11 (see FIG. 7) through the lower drainage portion 62 flows in from the upper end of the first flow path 454 of the trap tank 451. The plating solution flows downward in the first flow passage 454, is inverted below the partition wall 452 and above the lower recess 453, and flows upward in the second flow passage 455. Then, the plating solution that has reached the upper end of the second flow passage 455 is led to the plating solution tank 81 (see FIG. 7) by the recovery flow passage 83 and is stored in the plating solution tank 81. In FIG. 8, the flow of the plating solution in the trap tank 451 is indicated by thin arrows (the same applies to FIG. 9).

In the substrate processing apparatus 1, there is a possibility that part of the catalyst (for example, palladium) peels off from the substrate 9 and flows into the liquid receiver 6 during the plating process of the substrate 9. If the catalyst flows into the recovery flow path 83, electroless plating reaction may occur in the recovery flow path 83 or the plating solution tank 81, and metal in the plating solution may precipitate to cause clogging of the flow path, etc. There is.

In the substrate processing apparatus 1, as described above, by providing the trap portion 45 between the lower drainage portion 62 and the recovery flow path 83, a catalyst such as palladium peeled off from the substrate 9, and an electroless plating reaction It can prevent or suppress that the metal which arose by these approached into the collection | recovery flow path 83. FIG. Specifically, the catalyst or the metal (hereinafter collectively referred to as “entering heavy metal”) that has flowed into the trap tank 451 together with the plating solution has a specific gravity greater than that of the plating solution, so the lower portion of the first flow path 454 At this time, the plating solution flows out of the flow and settles into the lower recess 453 provided below the flow path of the plating solution. The entering heavy metal in the lower concave portion 453 is prevented from returning to the first flow path 454 and the second flow path 455 by the above-described step portion or the like. Therefore, the approach heavy metal can be prevented or suppressed from rising in the second flow path 455 and entering the recovery flow path 83.

The entering heavy metal accumulated in the lower recess 453 is removed from the inside of the trap tank 451 by supplying an acid cleaning solution (for example, aqua regia or nitric acid) to the trap tank 451 at the time of maintenance of the substrate processing apparatus 1 or the like. . The trap tank 451 is provided with an exhaust unit for removing hydrogen generated during acid cleaning.

FIG. 9 is a longitudinal sectional view showing the structure of another preferred trap portion 45a. The trap portion 45a includes a trap tank 451a having a shape different from that of the trap tank 451 shown in FIG. In the trap tank 451a, the lower part of the second flow passage 455 is an inclined flow passage that approaches the first flow passage 454 as it goes downward. The first flow passage 454 extends in the vertical direction, and a lower recess 453 is provided vertically below the first flow passage 454. Even when the trap portion 45 a is provided instead of the trap portion 45, in the same manner as described above, the entering heavy metal in the plating solution flowing from the lower drainage portion 62 into the first flow path 454 settles into the lower recess 453. Do. Therefore, it is possible to prevent or suppress the approach heavy metal from rising in the second channel 455 and entering the recovery channel 83.

In the substrate processing apparatus 1 shown in FIG. 6, when the supply of the plating solution to the substrate 9 is stopped and the plating process is completed, the second rinse solution is supplied from the processing solution supply unit 4 to the upper surface 91 of the rotating substrate 9. It is supplied (step S21). The second rinse liquid is, for example, pure water. In step S <b> 21, for example, a second columnar rinse liquid is discharged from the nozzle 41 toward the central portion of the substrate 9. In this case, the physical force applied to the substrate 9 by the first rinse liquid when the first rinse liquid is supplied in step S14 is the physical force applied to the substrate 9 by the second rinse liquid when the second rinse liquid is supplied in step S21. Less than force. The physical force applied to the substrate 9 by the first rinse liquid is the physical force applied from the first rinse liquid to the substrate 9 when the first rinse liquid and the substrate 9 contact (ie, mechanical force) Force), for example, an impact force applied to the substrate 9 by the collision of the first rinse liquid. The same applies to the physical force applied to the substrate 9 by the second rinse liquid.

The second rinse solution supplied onto the upper surface 91 of the substrate 9 spreads radially outward by centrifugal force, whereby the plating solution is removed from above the substrate 9. The second rinse liquid splashing from the substrate 9 to the periphery is received by the first upper liquid receiving portion 51, and via the inner peripheral surface 511 of the first upper liquid receiving portion 51 and the inner peripheral surface 24 of the first holding portion 2. The lower liquid receiving portion 6 is received by the lower liquid receiving block 61. The second rinse liquid received by the liquid receiver 6 is discharged to the outside of the housing 11 through the lower liquid drain 62. The second rinse liquid received by the liquid receiver 6 is preferably discarded via a path different from the discharge path of the plating liquid in step S20. Thereby, the recovery efficiency of the plating solution can be improved. When the supply of the second rinse liquid to the substrate 9 (that is, the second rinse processing) is performed for a predetermined time, the supply of the second rinse liquid is stopped.

Thereafter, the rotation speed of the substrate 9 by the rotation mechanism 33 is increased. As a result, the second rinse liquid on the substrate 9 moves radially outward and scatters radially outward from the outer edge portion of the substrate 9. The rotation of the substrate 9 is continued for a predetermined time, so that the drying process of removing the liquid such as the second rinse liquid from the substrate 9 is performed (step S22). When the drying process of the substrate 9 is completed, the rotation of the substrate 9 and the second holding unit 31 by the rotation mechanism 33 is stopped, and the process on the substrate 9 is completed (step S23). In the substrate processing apparatus 1, the above-described steps S11 to S23 are sequentially performed on the plurality of substrates 9, and the plurality of substrates 9 are sequentially processed.

In the substrate processing apparatus 1, for example, when processing of a predetermined number of substrates 9 is completed, cleaning processing of the apparatus is performed. In the cleaning process, for example, the cleaning solution is discharged from the cleaning unit 71 toward the outer peripheral surface 63 of the lower liquid receiving block 61, and the lower liquid receiving unit 6 is cleaned. Thereby, the processing solution such as the plating solution and the second rinse solution adhering to the lower liquid receiving portion 6 is removed. In addition, even when a part of the catalyst peels off from above the substrate 9 and flows into the liquid receiver 6 during the plating process of the substrate 9, the catalyst is also washed from the liquid receiver 6 by the cleaning process. It is removed.

As described above, the substrate processing apparatus 1 includes the first holding unit 2, the second holding unit 31, the holding unit moving mechanism 32, the processing liquid supply unit 4, and the lower liquid receiving unit 6. The first holding portion 2 is provided with a through hole 21. The through hole 21 has an upper opening 22 through which the substrate 9 can pass. The diameter of part of the inner circumferential surface 24 of the through hole 21 is smaller than that of the substrate 9. The first holding portion 2 holds the substrate 9 in a horizontal state by bringing the inner peripheral surface 24 of the through hole 21 into contact with the outer edge portion of the substrate 9 from below. The second holding portion 31 is located below the through hole 21. The holding part moving mechanism 32 moves the second holding part 31 upward through the through hole 21 to bring the second holding part 31 into contact with the lower surface 92 of the substrate 9, and the first holding part 2 to the second holding. The substrate 9 is delivered to the section 31. The processing liquid supply unit 4 supplies the processing liquid onto the upper surface 91 of the substrate 9. The liquid receiving portion 6 is located below the through hole 21.

The processing liquid supplied from the processing liquid supply unit 4 is surrounded by the upper surface 91 of the substrate 9 held by the first holding unit 2 below the upper end of the through hole 21 and the inner circumferential surface 24 of the through hole 21. It is stored in the storage space 20 to be stored. Accordingly, when the processing liquid is supplied by supplying the processing liquid onto the substrate 9, movement of the processing liquid on the upper surface 91 of the substrate 9 can be suppressed. As a result, the processing of the upper surface 91 of the substrate 9 by the processing liquid can be stably performed.

In the substrate processing apparatus 1, the substrate 9 is transferred from the first holding unit 2 to the second holding unit 31 so that the processing liquid in the storage space 20 is from between the substrate 9 and the inner circumferential surface 24 of the through hole 21. It flows downward and is received by the lower liquid receiver 6. Thus, the substrate processing apparatus 1 can be miniaturized in the radial direction as compared with the case where the cup portion is provided around the first holding portion to receive the processing liquid scattered from the substrate. In addition, when the treatment liquid is received by the cup portion, the gap between the cup portion and the first holding portion is relatively small, so that it is difficult to clean the inner circumferential surface and the like of the cup portion. On the other hand, in the substrate processing apparatus 1 described above, the gap between the lower liquid receiving portion 6 and the first holding portion 2 (for example, the radial direction between the lower end portion of the first holding portion 2 and the lower liquid receiving block 61 The gap can be made relatively easy. Therefore, the washing liquid can be supplied to a desired portion of the lower liquid receiving portion 6, and the lower liquid receiving portion 6 can be suitably washed. In other words, in the substrate processing apparatus 1, the discharge path of the processing liquid can be suitably cleaned.

The processing solution stored in the storage space 20 in the substrate processing apparatus 1 is, for example, a plating solution used for the electroless plating process of the substrate 9. In the substrate processing apparatus 1, as described above, the discharge path of the plating solution can be suitably cleaned. As a result, it is possible to prevent or suppress a defect such as metal adhesion in the discharge path.

As described above, the substrate processing apparatus 1 further includes the cleaning unit 71 that cleans the lower liquid receiving unit 6. As a result, the washing liquid can be supplied from the washing part 71 to the desired part of the lower liquid receiving part 6. As a result, the cleaning unit 71 can suitably perform the cleaning of the treatment liquid discharge path.

The substrate processing apparatus 1 further includes a rotation mechanism 33 and an upper liquid receiving unit 5. The rotation mechanism 33 rotates the second holding portion 31 above the upper end of the through hole 21. The upper liquid receiving portion 5 receives the processing liquid scattering from the substrate 9 rotating with the second holding portion 31 to the periphery. As described above, the processing efficiency of the substrate 9 can be improved by supplying a new processing liquid to the rotating substrate 9 to perform processing. In the above-mentioned example, the plating solution is supplied to the rotating substrate 9 as the processing solution, and the efficiency of the plating process on the substrate 9 is improved.

In the substrate processing apparatus 1, the upper liquid receiving portion 5 includes a first upper liquid receiving portion 51 which protrudes upward from the first holding portion 2 continuously to the first holding portion 2. Thus, the processing of the substrate 9 by the processing liquid stored in the storage space 20 (step S17) and the processing of the substrate 9 performed by supplying the processing liquid to the substrate 9 being rotated (step S20). Thus, the discharge path of the processing solution (in the above example, the plating solution) can be made common. As a result, the structure of the substrate processing apparatus 1 can be simplified.

As described above, the upper liquid receiving portion 5 further includes the second upper liquid receiving portion 52 that receives the processing liquid scattering from the substrate 9 at the radially outer side and upper than the first upper liquid receiving portion 51. Thus, the first upper liquid receiving portion 51 and the second upper liquid receiving portion 52 can separate and receive a plurality of types of processing solutions scattered from the substrate 9. As a result, the plurality of types of processing solutions used for processing the substrate 9 in the substrate processing apparatus 1 can be easily separated and collected or discarded.

FIG. 10 is a longitudinal sectional view showing another preferred substrate processing apparatus 1a. In the substrate processing apparatus 1a, in place of the first holding unit 2 shown in FIG. 1, a first holding unit 2a having a structure different from that of the first holding unit 2 is provided. Moreover, the gas injection part 73 shown in FIG. 1 is abbreviate | omitted. In the first holding portion 2 a, the step portion 25 is provided on the inner peripheral surface 24 of the through hole 21. The upper surface 26 of the stepped portion 25 is a substantially annular surface substantially perpendicular to the vertical direction. The outer diameter of the upper surface 26 of the stepped portion 25 is larger than the diameter of the substrate 9. The inner diameter of the upper surface 26 of the stepped portion 25 is smaller than the diameter of the substrate 9. When the substrate 9 is held by the first holding portion 2 a, the outer edge portion of the lower surface 92 of the substrate 9 contacts the upper surface 26 of the stepped portion 25. The first holding portion 2 a is provided with a suction portion 74 facing the outer edge portion of the substrate 9 in contact with the upper surface 26 of the stepped portion 25. The suction portion 74 is provided over substantially the entire circumferential direction, and sucks the outer edge portion of the substrate 9. The suction portion 74 is, for example, substantially annular and centered on the central axis J1.

As described above, in the substrate processing apparatus 1 a, the first holding unit 2 a includes the suction unit 74 that sucks the outer edge portion of the substrate 9 in contact with the inner peripheral surface 24 of the through hole 21. This prevents the processing solution (the plating solution in the above example) stored in the storage space 20 from leaking downward from between the outer edge of the substrate 9 and the inner peripheral surface 24 of the through hole 21 or It can be suppressed. The suction portion 74 preferably adsorbs the outer edge portion of the substrate 9 over substantially the entire circumference. Thereby, it can be further prevented or suppressed that the processing liquid stored in the storage space 20 leaks downward from between the outer edge of the substrate 9 and the inner peripheral surface 24 of the through hole 21. Even when the outer edge portion of the substrate 9 is not substantially adsorbed by the suction portion 74, the gap between the outer edge portion of the substrate 9 and the inner circumferential surface 24 of the through hole 21 is drawn by suction by the suction portion 74. Since it can be made small, the said leak of a process liquid can be prevented or suppressed.

FIG. 11 is a longitudinal sectional view showing another preferred substrate processing apparatus 1b. In the substrate processing apparatus 1b, the upper liquid receiving portion 5b is replaced with the first upper liquid receiving portion 51 shown in FIG. 1, and the radial direction outer side of the first holding portion 2 and the radial direction of the second upper liquid receiving portion 52. It has a first upper liquid receiving portion 51b disposed inside. The first upper liquid receiving portion 51b is a substantially cylindrical member centering on the central axis J1. The first upper liquid receiving portion 51 b is separated radially outward from the first holding portion 2, and is separated radially inward from the second upper liquid receiving portion 52.

The upper end portion of the first upper liquid receiving portion 51 b is located above the upper end portion of the first holding portion 2. The first upper liquid receiving portion 51b includes a substantially cylindrical side wall portion centered on the central axis J1, and a canopy portion extending radially inward from the upper end portion of the side wall portion. The canopy may be an inclined portion directed upward as it goes radially inward. The inner peripheral surface 511b of the first upper liquid receiving portion 51b is, for example, substantially cylindrical with the central axis J1 as a center. The upper end portion of the second upper liquid receiving portion 52 is located above the upper end portion of the first upper liquid receiving portion 51 b. In the example shown in FIG. 11, the first upper liquid receiving portion 51 b and the second upper liquid receiving portion 52 are fixed to the housing 11 and do not move in the vertical direction.

In the substrate processing apparatus 1b, for example, in step S20 described above (see FIG. 3), the substrate 9 is rotated at a position radially opposed to the first upper liquid receiving portion 51b. The plating solution supplied to the rotating substrate 9 is received by the first upper liquid receiving portion 51 b and discharged to the outside of the housing 11 through the inner drainage portion 54. The plating solution discharged through the internal drainage section 54 merges with the plating solution discharged through the lower drainage section 62, for example, and is collected or discarded. In the substrate processing apparatus 1b, the first upper liquid receiving portion 51b also receives the second rinse liquid supplied to the rotating substrate 9 in step S21.

In the substrate processing apparatus 1b, the radial distance between the substrate 9 and the first upper liquid receiving portion 51b is greater than the radial distance between the substrate 9 and the first upper liquid receiving portion 51 shown in FIG. Since the size is large, the possibility that the processing liquid (that is, the plating liquid or the second rinse liquid) splashed from the substrate 9 rebounds from the first upper liquid receiving portion 51 b and adheres to the substrate 9 can be reduced. Therefore, in steps S20 and S21, the rotational speed of the substrate 9 can be increased, and the processing efficiency of the substrate 9 can be improved.

In the substrate processing apparatus 1b, as indicated by a two-dot chain line in FIG. 11, the upper liquid receiving portion moving mechanism moves the first upper liquid receiving portion 51b and the second upper liquid receiving portion 52 independently in the vertical direction. 55 may be provided. In steps S13 and S14, when the catalyst solution and the first rinse liquid scattered from the rotating substrate 9 are received by the second upper liquid receiving section 52, the first upper liquid receiving section 51b is lowered, and the first upper liquid receiving section 51b is lowered. The canopy of the liquid unit 51 b contacts the upper end of the first holding unit 2. Thereby, the catalyst solution and the first rinse liquid are prevented or suppressed from entering the first upper liquid receiving portion 51b. In addition, in steps S20 and S21, when the first upper liquid receiving portion 51b receives the plating solution and the second rinse liquid scattered from the rotating substrate 9, the second upper liquid receiving portion 52 is lowered, and the second upper liquid receiving portion 52 is lowered. The canopy of the upper liquid receiver 52 contacts the upper surface of the canopy of the first upper liquid receiver 51b. Thereby, the plating solution and the second rinse solution are prevented or suppressed from entering the second upper liquid receiving portion 52.

Next, a substrate processing apparatus 1c according to a second embodiment of the present invention will be described. In the substrate processing apparatus 1c shown in FIG. 12, in place of the lower liquid receiving portion 6 shown in FIG. 1, a lower liquid receiving portion 6c having a structure different from that of the lower liquid receiving portion 6 is provided. In addition, the second upper liquid receiving portion 52 is omitted from the upper liquid receiving portion 5. Furthermore, in the substrate processing apparatus 1c, as in the substrate processing apparatus 1a shown in FIG. 10, the gas injection unit 73 is omitted, and the suction unit 74 is provided in the first holding unit 2c. The suction portion 74 sucks, preferably adsorbs, the outer edge of the lower surface 92 of the substrate 9. The discharge port 42 which discharges a process liquid is provided in the internal peripheral surface 24 of the through-hole 21 of the 1st holding part 2c. On the lower surface of the first holding unit 2c, a cleaning unit 71c is provided which supplies the cleaning liquid to the lower liquid receiving unit 6c to clean the lower liquid receiving unit 6c. The suction unit 74, the cleaning unit 71c, and the discharge port 42 are provided over substantially the entire circumferential direction. The suction unit 74, the cleaning unit 71c, and the discharge port 42 have, for example, a substantially annular shape centering on the central axis J1. The other structure of the substrate processing apparatus 1c is substantially the same as that of the substrate processing apparatus 1 shown in FIG. In the following description, the components of the substrate processing apparatus 1c corresponding to the components of the substrate processing apparatus 1 are denoted by the same reference numerals.

The substrate receiving device 6 c has a first liquid receiving portion 64, a second liquid receiving portion 65, and a liquid receiving portion moving mechanism 66. The first lower liquid receiving portion 64 and the second lower liquid receiving portion 65 are disposed below the through hole 21 of the first holding portion 2c. Each of the first and second liquid receiving portions 64 and 65 is a substantially cylindrical member centered on the central axis J1. The second sub fluid receiving portion 65 is disposed radially inward of the first sub fluid receiving portion 64. The inner circumferential surface of the first liquid receiving portion 64 and the outer circumferential surface of the second liquid receiving portion 65 are close to each other. The lower liquid receiving portion moving mechanism 66 moves the first lower liquid receiving portion 64 in the vertical direction.

The inner edge portion 642 of the first liquid receiving portion 64 is located radially inward of the inner peripheral edge of the lower end portion of the first holding portion 2c, and radially adjacent to the inner peripheral edge of the lower end portion of the first holding portion 2c. . A portion other than the inner edge portion 642 of the first liquid receiving portion 64 is located vertically below the step portion 25 of the first holding portion 2c. In the state shown in FIG. 12, the upper surface of the inner edge portion 642 of the first lower liquid receiving portion 64 is located at substantially the same position as the lower edge of the inner peripheral surface 24 of the first holding portion 2c. The upper outer peripheral edge of the inner edge portion 642 of the first lower liquid receiving portion 64 is sealed in a fluid-tight manner with the lower edge of the inner peripheral surface 24 of the first holding portion 2c. The first liquid receiving portion 64 has a first pocket 641 which is a recess recessed downward from the upper surface. The first pocket 641 is located vertically below the step 25. In the state shown in FIG. 12, the upper opening 643 which is the upper end of the first pocket 641 is closed by the first holding portion 2 c.

In the state shown in FIG. 12, the upper surface of the second lower liquid receiving portion 65 is located at substantially the same position as the upper surface of the inner edge portion 642 of the first lower liquid receiving portion 64 in the vertical direction. The upper inner peripheral edge of the inner edge portion 642 of the first lower liquid receiving portion 64 is sealed in a fluid-tight manner with the second lower liquid receiving portion 65. The second liquid receiving portion 65 has a second pocket 651 which is a concave portion recessed downward from the upper surface.

Next, an example of the flow of processing of the substrate 9 by the substrate processing apparatus 1c will be described with reference to FIGS. 13A and 13B. 14 to 20 are longitudinal sectional views showing the substrate processing apparatus 1c during processing of the substrate 9. When the substrate 9 is processed by the substrate processing apparatus 1c, first, as shown in FIG. 14, the second holding unit 31 horizontally holds the substrate 9 (step S31). The substrate 9 held by the second holding portion 31 is positioned above the first holding portion 2 c and radially faces the first upper liquid receiving portion 51 of the upper liquid receiving portion 5.

Subsequently, rotation of the substrate 9 and the second holding unit 31 by the rotation mechanism 33 is started (step S32). Then, the catalyst solution is supplied from the processing liquid supply unit 4 to the upper surface 91 of the rotating substrate 9 (step S33). In step S33, for example, the liquid columnar catalyst solution is discharged from the nozzle 41 toward the central portion of the substrate 9. The catalyst solution supplied to the central portion of the substrate 9 moves from the central portion to the outer edge portion of the substrate 9 by centrifugal force, and is applied over the entire upper surface 91 of the substrate 9. The catalyst solution that has reached the outer edge portion of the substrate 9 is scattered to the periphery by centrifugal force and received by the first upper liquid receiving portion 51.

The catalyst solution received by the first upper liquid receiving portion 51 flows downward along the inner peripheral surface 511 of the first upper liquid receiving portion 51 and the inner peripheral surface 24 of the first holding portion 2c, and the upper opening 643 The second pocket of the second lower liquid receiving portion 65 passes through the upper side of the first lower liquid receiving portion 64 in the closed state (specifically, the upper side of the inner edge portion 642 of the first lower liquid receiving portion 64). It flows to 651. The treatment liquid received by the second pocket 651 of the second liquid receiver 65 is discharged to the outside of the housing 11 through the second lower liquid discharge portion 68. The discharged catalyst solution may, for example, be recovered and reused or may be discarded. A catalyst (for example, palladium) is adsorbed on the upper surface 91 of the substrate 9 by supplying a catalyst solution to the substrate 9 (that is, applying a catalyst) for a predetermined time.

When the supply of the catalyst solution is stopped and the catalyst application process is completed, the rotation of the substrate 9 and the second holding unit 31 by the rotation mechanism 33 is stopped (step S34). Next, the second holding portion 31 is moved downward by the holding portion moving mechanism 32, and the outer edge portion of the substrate 9 contacts the inner circumferential surface 24 of the first holding portion 2c. The second holding portion 31 further moves downward, and as shown in FIG. 12, separates from the lower surface 92 of the substrate 9 downward. Thereby, the substrate 9 is delivered from the second holding portion 31 to the first holding portion 2c, and held horizontally by the first holding portion 2c below the upper end of the through hole 21 (step S35). . When the substrate 9 is held by the first holding unit 2c, the outer edge of the lower surface 92 of the substrate 9 is sucked and adsorbed by the suction unit 74.

Subsequently, the first rinse liquid is discharged from the discharge port 42 of the treatment liquid supply unit 4 provided in the first holding unit 2c shown in FIG. The discharge port 42 is located above the upper surface 91 of the substrate 9 held by the first holding unit 2 c. The first rinse liquid discharged from the discharge port 42 flows downward along the inner peripheral surface 24 of the through hole 21 of the first holding portion 2 c and is supplied onto the upper surface 91 of the substrate 9 from the outside in the radial direction. The first rinse liquid is, for example, pure water.

The first rinse solution supplied to the outer edge portion of the substrate 9 spreads radially inward, and the upper surface 91 of the substrate 9 is covered with the first rinse solution over the entire surface. In other words, the first rinse liquid is stored in the storage space 20 surrounded by the upper surface 91 of the substrate 9 held by the first holding unit 2 c and the inner circumferential surface 24 of the through hole 21. In the substrate processing apparatus 1c, as described above, since the outer edge of the lower surface 92 of the substrate 9 held by the first holding unit 2c is sucked by the suction unit 74, the substrate 9 is temporarily deformed, for example, warped. Even in this case, the first rinse liquid is prevented or suppressed from leaking downward between the substrate 9 and the first holding unit 2c.

When the upper surface 91 of the substrate 9 is covered with the first rinse liquid, the liquid film of the first rinse liquid on the upper surface 91 of the substrate 9 from the nozzle 41 of the processing liquid supply unit 4 (ie, stored in the storage space 20) The supply of the first rinse liquid is started with respect to the first rinse liquid (step S36). In step S36, for example, a liquid columnar first rinse liquid is discharged from the nozzle 41 toward the central portion of the substrate 9. For example, the discharge flow rate of the first rinse liquid from the nozzle 41 is larger than the discharge flow rate of the first rinse liquid from the discharge port 42. Since the upper surface 91 of the substrate 9 is covered with the first rinse liquid in step S36, the first rinse liquid from the nozzle 41 does not directly collide with the upper surface 91 of the substrate 9, (1) It is supplied indirectly through the liquid film of the rinse solution. When the supply of the first rinse liquid from the nozzle 41 is performed, the supply of the first rinse liquid from the discharge port 42 may be continued or may be stopped.

As shown in FIG. 15, when the first rinse liquid is stored to a predetermined depth in the storage space 20, the supply of the first rinse liquid from the processing liquid supply unit 4 is stopped. The first rinse solution stored in the storage space 20 is in contact with the inner circumferential surface 24 of the through hole 21. The depth of the first rinse liquid stored in the storage space 20 (that is, the distance in the vertical direction between the liquid surface of the first rinse liquid and the upper surface 91 of the substrate 9) is substantially uniform over the entire surface of the substrate 9. It is. The depth of the first rinse liquid in the storage space 20 is the liquid film of the first rinse liquid that can be held on the upper surface 91 of the substrate 9 by surface tension in the substrate 9 in the state where the outer edge portion is not in contact with other members. (Hereafter, it is called "the liquid film by surface tension.") It is larger than the thickness. Specifically, the depth of the first rinse solution in the storage space 20 is larger than the thickness of the liquid film due to the surface tension at the outer edge of the substrate 9 and the thickness of the liquid film due to the surface tension at the central portion of the substrate 9 Greater than

The upper surface 91 of the substrate 9 is covered with the first rinse solution stored in the storage space 20 for a predetermined time, and the first rinse process is completed. Then, the second holding unit 31 is moved upward by the holding unit moving mechanism 32 to suction and hold the lower surface 92 of the substrate 9. Further, the suction of the substrate 9 by the suction unit 74 is released. Then, the second holding portion 31 further moves upward, and as shown in FIG. 16, the substrate 9 is separated upward from the first holding portion 2c. Thereby, the substrate 9 is delivered from the first holding unit 2c to the second holding unit 31 and held in the horizontal state by the second holding unit 31 (step S37).

The first rinse solution stored in the storage space 20 flows downward from the gap between the outer edge of the substrate 9 and the inner peripheral surface 24 of the first holding portion 2c toward the lower liquid receiving portion 6c. The first rinse liquid flows radially inward on the first lower liquid receiving portion 64 in a state where the upper opening 643 is closed by the first holding portion 2 c, and the second lower liquid receiving portion 65 It flows into the pocket 651. The treatment liquid received by the second pocket 651 of the second liquid receiver 65 is discharged to the outside of the housing 11 through the second lower liquid discharge portion 68. Thereby, the catalyst solution on the substrate 9 is removed together with the first rinse liquid. The first rinse solution received by the second liquid receiver 65 is preferably discarded via a route different from the route for discharging the catalyst solution in step S33. Thereby, the recovery efficiency of the catalyst solution can be improved.

When the first rinse liquid flows downward from above the substrate 9, the second holding unit 31 is moved downward by the holding unit moving mechanism 32, and the substrate 9 is moved from the second holding unit 31 as shown in FIG. It is delivered to the first holding unit 2c and held in the horizontal state (step S38). Then, the outer edge portion of the lower surface 92 of the substrate 9 is sucked and adsorbed by the suction unit 74. In addition, the first liquid receiving portion 64 is moved downward by the liquid receiving portion moving mechanism 66, and between the lower end portion of the first holding portion 2c and the second liquid receiving portion 65 (that is, A gap is formed above the inner edge portion 642 of the lower liquid receiving portion 64. In the state shown in FIG. 17, the upper opening 643 of the first lower liquid receiving portion 64 is separated downward from the first holding portion 2 c and opened.

In the substrate processing apparatus 1c, the substrate 9 is raised to the position shown in FIG. 14 between step S37 and step S38, and the substrate 9 is rotated for a predetermined time to leave the substrate 9 remaining. The rinse solution may be removed. In this case, the first rinse liquid scattered around from the substrate 9 is received by the first upper liquid receiving portion 51, and the inner peripheral surface 511 of the first upper liquid receiving portion 51 and the inner peripheral surface 24 of the first holding portion 2c. , And flows downward, is received by the second liquid receiver 65, and is discharged to the outside of the housing 11.

As shown in FIG. 17, when the substrate 9 is held by the first holding unit 2c in step S39, the plating solution is supplied from the treatment liquid supply unit 4 to the upper surface 91 of the substrate 9 (step S39). In step S39, for example, a liquid columnar plating solution is discharged from the nozzle 41 toward the central portion of the substrate 9. The plating solution supplied to the central portion of the substrate 9 spreads radially outward, and the upper surface 91 of the substrate 9 is covered with the plating solution over the entire surface. The plating solution may be supplied onto the substrate 9 from the discharge port 42 of the processing solution supply unit 4.

The plating solution supplied from the processing solution supply unit 4 is stored in the storage space 20, as shown in FIG. When the plating solution is stored in the storage space 20 to a predetermined depth, the supply of the plating solution from the processing solution supply unit 4 is stopped. The plating solution stored in the storage space 20 is in contact with the inner circumferential surface 24 of the through hole 21. The depth of the plating solution stored in the storage space 20 is substantially uniform over the entire surface of the substrate 9. The depth of the plating solution in the storage space 20 is the solution of the plating solution which can be held on the upper surface 91 of the substrate 9 by surface tension in the substrate 9 in the state where the outer edge portion is not in contact with other members. Greater than the thickness of the membrane (ie, the liquid film due to surface tension).

By covering the upper surface 91 of the substrate 9 with the plating solution stored in the storage space 20 for a predetermined time, a metal contained in the plating solution is formed on the upper surface 91 of the substrate 9 (specifically, formed on the upper surface 91) Layer) is formed on the substrate 9). In the substrate processing apparatus 1c, while the upper surface 91 of the substrate 9 is covered with the plating solution stored in the storage space 20, the substrate 9 is heated by the heating unit 72. Thereby, the deposition of the metal on the upper surface 91 of the substrate 9 is promoted.

Subsequently, the second holding unit 31 is moved upward by the holding unit moving mechanism 32 to suction and hold the lower surface 92 of the substrate 9. Further, the suction of the substrate 9 by the suction unit 74 is released. Then, the second holding portion 31 further moves upward, and as shown in FIG. 19, the substrate 9 is separated upward from the first holding portion 2c. Thereby, the substrate 9 is delivered from the first holding unit 2c to the second holding unit 31, and is held in the horizontal state by the second holding unit 31 (step S40).

The plating solution stored in the storage space 20 flows downward from the gap between the outer edge of the substrate 9 and the inner circumferential surface 24 of the first holding portion 2c toward the lower liquid receiving portion 6c. The plating solution flows downward through the gap between the lower end portion of the first holding portion 2 c and the second lower liquid receiving portion 65, and flows into the first pocket 641 of the first lower liquid receiving portion 64. . The plating solution received by the first liquid receiving portion 64 is discharged to the outside of the housing 11 through the first lower liquid discharging portion 67.

Then, as shown in FIG. 20, when the substrate 9 is disposed at the same position as the first upper liquid receiving portion 51 in the vertical direction, the rotation mechanism 33 starts the rotation of the substrate 9 and the second holding portion 31. (Step S41). The rotational speed of the substrate 9 in step S41 is, for example, 300 rpm to 1000 rpm. The plating solution discharged from the nozzle 41 toward the central portion of the substrate 9 spreads radially outward on the upper surface 91 of the substrate 9 by centrifugal force, and is supplied to the entire upper surface 91 of the substrate 9. Thereby, the plating process on the upper surface 91 of the substrate 9 proceeds (step S42).

In the substrate processing apparatus 1c, the supply of the plating solution from the nozzle 41 onto the substrate 9 may be continued during steps S40 and S41. In addition, while the plating process of the substrate 9 is performed in step S42, the heating unit 72 (see FIG. 18) may heat the substrate 9 and promote the plating process as in the plating process of step S39. .

The plating solution that has reached the outer edge portion of the substrate 9 is scattered to the periphery by centrifugal force, and is received by the first upper liquid receiving portion 51 that faces the substrate 9 in the radial direction. The plating solution received by the first upper liquid receiving portion 51 flows downward along the inner peripheral surface 511 of the first upper liquid receiving portion 51 and the inner peripheral surface 24 of the first holding portion 2c, and flows downward. It flows into the first pocket 641 of the liquid portion 64. The plating solution received by the first liquid receiving portion 64 is discharged to the outside of the housing 11 through the first lower liquid discharging portion 67. The discharged plating solution may be collected and reused, for example, or may be discarded. Metal is plated on the upper surface 91 of the substrate 9 by supplying a plating solution to the substrate 9 (that is, plating) for a predetermined time.

When the supply of the plating solution is stopped and the plating process is completed, the second rinse solution is supplied from the nozzle 41 to the upper surface 91 of the rotating substrate 9 (step S43). The second rinse liquid is, for example, pure water. In step S43, for example, a second columnar rinse liquid is discharged from the nozzle 41 toward the central portion of the substrate 9. In this case, the physical force applied to the substrate 9 by the first rinse liquid at the time of supply of the first rinse liquid in step S36 (for example, the physical force applied to the substrate 9 by the collision of the first rinse liquid) is It is smaller than the physical force applied to the substrate 9 by the second rinse liquid when the second rinse liquid is supplied in S43.

The second rinse solution supplied onto the upper surface 91 of the substrate 9 spreads radially outward by centrifugal force, whereby the plating solution is removed from above the substrate 9. The second rinse liquid splashing from the substrate 9 to the periphery is received by the first upper liquid receiving portion 51, and via the inner peripheral surface 511 of the first upper liquid receiving portion 51 and the inner peripheral surface 24 of the first holding portion 2c. The liquid flows into the first pocket 641 of the first liquid receiving portion 64. The second rinse liquid received by the first liquid receiving portion 64 is discharged to the outside of the housing 11 through the first lower liquid discharging portion 67. The second rinse solution received by the first liquid receiver 64 is preferably discarded via a path different from the discharge path of the plating solution in step S42. Thereby, the recovery efficiency of the plating solution can be improved. When the supply of the second rinse liquid to the substrate 9 (that is, the second rinse processing) is performed for a predetermined time, the supply of the second rinse liquid is stopped.

Thereafter, the rotation speed of the substrate 9 by the rotation mechanism 33 is increased. As a result, the second rinse liquid on the substrate 9 moves radially outward and scatters radially outward from the outer edge portion of the substrate 9. The rotation of the substrate 9 is continued for a predetermined time, so that the drying process for removing the liquid such as the second rinse liquid from the substrate 9 is performed (step S44). When the drying process of the substrate 9 is completed, the rotation of the substrate 9 and the second holding unit 31 by the rotation mechanism 33 is stopped, and the process on the substrate 9 is completed (step S45). In the substrate processing apparatus 1c, the above-described steps S31 to S45 are sequentially performed on the plurality of substrates 9, and the plurality of substrates 9 are sequentially processed.

In the substrate processing apparatus 1c, for example, when processing of a predetermined number of substrates 9 is completed, cleaning processing of the apparatus is performed. In the cleaning process, for example, the cleaning liquid is discharged from the cleaning part 71c provided on the lower surface of the first holding part 2c toward the first liquid receiving part 64 to clean the first liquid receiving part 64. As a result, the processing solution such as the plating solution and the second rinse solution adhering to the first liquid receiver 64 is removed. In addition, even when a part of the catalyst peels off from above the substrate 9 and flows into the first liquid receiver 64 during the plating process of the substrate 9, the catalyst is also subjected to the first subsurface treatment by the cleaning process. It is removed from the liquid portion 64.

As described above, the substrate processing apparatus 1 c includes the first holding unit 2 c, the second holding unit 31, the holding unit moving mechanism 32, and the processing liquid supply unit 4 as in the substrate processing apparatus 1 described above. , And the lower liquid receiving portion 6c. A through hole 21 is provided in the first holding portion 2c. The through hole 21 has an upper opening 22 through which the substrate 9 can pass. The diameter of part of the inner circumferential surface 24 of the through hole 21 is smaller than that of the substrate 9. The first holding portion 2 c brings the inner peripheral surface 24 of the through hole 21 into contact with the outer edge portion of the substrate 9 from below to hold the substrate 9 in a horizontal state. The second holding portion 31 is located below the through hole 21. The holding unit moving mechanism 32 moves the second holding unit 31 upward through the through hole 21 to bring the second holding unit 31 into contact with the lower surface 92 of the substrate 9, and from the first holding unit 2 c to the second holding The substrate 9 is delivered to the section 31. The processing liquid supply unit 4 supplies the processing liquid onto the upper surface 91 of the substrate 9. The liquid receiving portion 6 c is located below the through hole 21.

The treatment liquid supplied from the treatment liquid supply unit 4 is surrounded by the upper surface 91 of the substrate 9 held by the first holding unit 2 c below the upper end of the through hole 21 and the inner circumferential surface 24 of the through hole 21. It is stored in the storage space 20 to be stored. Accordingly, when the processing liquid is supplied by supplying the processing liquid onto the substrate 9, movement of the processing liquid on the upper surface 91 of the substrate 9 can be suppressed. As a result, the processing of the upper surface 91 of the substrate 9 by the processing liquid can be stably performed.

In the substrate processing apparatus 1c, the substrate 9 is transferred from the first holding unit 2c to the second holding unit 31 so that the processing liquid in the storage space 20 is between the substrate 9 and the inner circumferential surface 24 of the through hole 21. It flows downward and is received by the lower liquid receiver 6c. Thus, the substrate processing apparatus 1c can be miniaturized in the radial direction as compared with the case where the cup portion is provided around the first holding portion to receive the processing liquid scattering from the substrate. In addition, when the treatment liquid is received by the cup portion, the gap between the cup portion and the first holding portion is relatively small, so that it is difficult to clean the inner circumferential surface and the like of the cup portion. On the other hand, in the substrate processing apparatus 1c described above, the gap between the lower liquid receiving portion 6c and the first holding portion 2c (for example, the vertical direction between the lower surface of the first holding portion 2c and the first lower liquid receiving portion 64) ) Can be relatively easily enlarged. Therefore, the washing liquid can be supplied to the desired portion of the lower liquid receiving portion 6c, and the lower liquid receiving portion 6c can be suitably washed. In other words, in the substrate processing apparatus 1c, the discharge path of the processing liquid can be suitably cleaned.

The processing solution stored in the storage space 20 in the substrate processing apparatus 1 c is, for example, a plating solution used for the electroless plating process of the substrate 9. In the substrate processing apparatus 1c, as described above, the discharge path of the plating solution can be suitably cleaned. As a result, it is possible to prevent or suppress a defect such as metal adhesion in the discharge path.

In the substrate processing apparatus 1c, the lower liquid receiving portion 6c includes a first lower liquid receiving portion 64 and a second lower liquid receiving portion 65. The first liquid receiving portion 64 is disposed below the through hole 21. The first liquid receiving portion 64 receives the processing liquid flowing downward from between the substrate 9 and the inner circumferential surface 24 of the through hole 21. The second sub fluid receiving portion 65 is disposed radially inward of the first sub fluid receiving portion 64 below the through hole 21. The second lower liquid receiving portion 65 flows the processing liquid flowing downward from between the substrate 9 and the inner peripheral surface 24 of the through hole 21 in a state where the upper opening 643 of the first lower liquid receiving portion 64 is closed. receive. Thus, the treatment liquid received by the lower liquid receiving portion 6c can be separated and drained.

In the substrate processing apparatus 1c, the catalyst solution and the first rinse liquid are received by the first lower liquid receiving portion 64 of the lower liquid receiving portion 6c, and the plating solution and the second rinse liquid are second lower of the lower liquid receiving portion 6c. It may be received by the liquid receiver 65.

FIG. 21 is a longitudinal sectional view showing another preferred substrate processing apparatus 1d. In the substrate processing apparatus 1d, instead of the first holding portion 2c and the lower liquid receiving portion 6c shown in FIG. 12, the first holding portion 2d and the lower liquid receiving structure are different from the first holding portion 2c and the lower liquid receiving portion 6c. A part 6d is provided. In addition, the upper liquid receiver 5 d includes a first upper liquid receiver 51 b and a second upper liquid receiver 52 shown in FIG. 11. The other structure of the substrate processing apparatus 1d is substantially the same as that of the substrate processing apparatus 1c shown in FIG. In the following description, the components of the substrate processing apparatus 1d corresponding to the components of the substrate processing apparatus 1c are denoted by the same reference numerals. The flow of processing of the substrate 9 in the substrate processing apparatus 1d is substantially the same as the flow of processing of the substrate 9 in the above-described substrate processing apparatus 1c (steps S31 to S45).

In the first holding portion 2d, the inner circumferential surface 24 of the through hole 21 includes an annular mounting surface 27 substantially perpendicular to the central axis J1. A suction unit 74 is provided on the mounting surface 27. In the first holding unit 2d, the outer edge portion of the lower surface 92 of the substrate 9 placed on the placement surface 27 is sucked by the suction unit 74, and is preferably adsorbed. In the first holding portion 2 d, the inner circumferential surface 24 of the through hole 21 goes radially inward as it goes downward from the inner peripheral edge of the mounting surface 27. In addition, the first holding portion 2 d includes an inclined lower surface 28 which is directed downward from the lower end edge of the inner peripheral surface 24 of the through hole 21 in a radially outward direction. The inclined lower surface 28 is located vertically below the mounting surface 27.

The lower liquid receiving portion 6d includes a first lower liquid receiving portion 64d, a second lower liquid receiving portion 65d, and a lower liquid receiving portion moving mechanism 66d substantially the same as the lower liquid receiving portion 6c shown in FIG. The first lower liquid receiving portion 64 d and the second lower liquid receiving portion 65 d are disposed below the through hole 21 of the first holding portion 2 d. The first liquid receiving portion 64d is a substantially cylindrical portion centered on the central axis J1. The first liquid receiving portion 64 d is, for example, a member in a single connection with the first holding portion 2 d. The second liquid receiver 65 d is a substantially cylindrical member centered on the central axis J 1. The second liquid receiver 65 d is disposed radially inward of the first liquid receiver 64 d. In the example shown in FIG. 21, the inner edge portion of the first lower liquid receiving portion 64d and the outer edge portion of the second lower liquid receiving portion 65d overlap in the radial direction, and the inner peripheral surface of the first lower liquid receiving portion 64d is , And radially inward of the outer peripheral surface of the second liquid receiving portion 65d. The lower liquid receiver moving mechanism 66d moves the second lower liquid receiver 65d in the vertical direction.

The first liquid receiver 64 d is located vertically below the mounting surface 27 of the first holding unit 2 d. The first liquid receiving portion 64 d has a first pocket 641 which is a concave portion recessed downward from the upper surface. The second lower liquid receiving portion 65d has a second pocket 651 which is a recess recessed downward from the upper surface. The outer edge portion 652 of the second lower liquid receiving portion 65d is located radially outside the inner peripheral edge of the lower end portion of the first holding portion 2d, and vertically overlaps the inner peripheral edge of the lower end portion of the first holding portion 2d. In the state shown in FIG. 21, the outer edge portion 652 of the second lower liquid receiving portion 65d contacts the inclined lower surface 28 of the first holding portion 2d from the lower side. Thereby, the upper opening which is the upper end of the first pocket 641 of the first lower liquid receiving portion 64d is closed by the second lower liquid receiving portion 65d. The outer edge portion 652 of the second liquid receiving portion 65d and the inclined lower surface 28 of the first holding portion 2d are sealed in a liquid tight manner.

In the state shown in FIG. 21, when the processing liquid is supplied onto the upper surface 91 of the substrate 9, the processing liquid is stored in the storage space 20. Thereafter, as shown in FIG. 22, when the second holding unit 31 receives the substrate 9 from the first holding unit 2 d and ascends, the processing liquid stored in the storage space 20 is the outer edge portion of the substrate 9 and the first It flows downward toward the lower liquid receiving portion 6 d from the space between the holding portion 2 d and the inner circumferential surface 24. The treatment liquid flows into the second pocket 651 of the second lower liquid receiving portion 65d. The treatment liquid received by the second pocket 651 is drained to the outside of the housing 11 through the second lower drainage portion 68. As described above, since the upper opening of the first lower liquid receiving portion 64d is closed, the processing liquid does not flow into the first pocket 641 of the first lower liquid receiving portion 64d.

On the other hand, as shown in FIG. 23, when the second liquid receiving portion 65d is lowered by the liquid receiving portion moving mechanism 66d, the outer edge portion 652 of the second liquid receiving portion 65d is the inclined lower surface of the first holding portion 2d. Separate downward from 28. An upper opening 643 of the first pocket 641 of the first lower liquid receiving portion 64d is formed between the outer edge portion 652 of the second lower liquid receiving portion 65d and the inclined lower surface 28 of the first holding portion 2d. In this state, the processing liquid stored in the storage space 20 is moved downward toward the lower liquid receiving portion 6d from the gap between the outer edge of the substrate 9 and the inner peripheral surface 24 of the first holding portion 2d. When flowing, the treatment liquid flows into the first pocket 641 of the first lower liquid receiving portion 64 d through the upper opening 643. The treatment liquid received by the first pocket 641 is drained to the outside of the housing 11 through the first lower drainage portion 67. The upper surface of the outer edge portion 652 of the second liquid receiving portion 65d is an inclined surface directed downward as going radially outward, so the treatment liquid flows into the first pocket 641 along the inclined surface. , Does not flow into the second pocket 651.

In the substrate processing apparatus 1d shown in FIG. 21, for example, the catalyst solution supplied on the substrate 9 is received by the second upper liquid receiving portion 52 of the upper liquid receiving portion 5d, and the first rinse liquid is the first upper liquid receiving portion. It is received by the part 51b. The plating solution supplied onto the substrate 9 is received by the first lower liquid receiving portion 64d of the lower liquid receiving portion 6d, and the second rinse liquid is received by the second lower liquid receiving portion 65d. As described above, the recovery efficiency of the processing solution (for example, the catalyst solution and the plating solution) can be improved by making the structure to be processed on the substrate 9 different for each different processing solution. In addition, the structure which receives each process liquid in the substrate processing apparatus 1d may be changed suitably.

Various modifications can be made to the substrate processing in the above-described substrate processing apparatuses 1 and 1a to 1d and the substrate processing apparatuses 1 and 1a to 1d.

For example, the catalyst contained in the catalyst solution used in the substrate processing apparatus 1, 1a to 1d is not limited to palladium, and various catalysts other than palladium may be contained in the catalyst solution. Moreover, the metal contained in a plating solution is not limited to the above-mentioned heavy metal, Various metals may be contained in a plating solution. The first rinse liquid and the second rinse liquid are not limited to pure water, and may be other types of rinse liquid.

In the substrate processing apparatus 1, 1a to 1d, a nozzle moving mechanism for moving the nozzle 41 substantially horizontally above the substrate 9 is provided, and the central portion of the substrate 9 is supplied while the processing liquid is supplied from the nozzle 41 to the substrate 9. The reciprocating movement of the nozzle 41 may be repeated between the upper side and the upper side of the outer edge.

In the substrate processing apparatus 1a shown in FIG. 10, in the substrate 9 held by the first holding unit 2a, the outer edge of the lower surface 92 is not only sucked by the suction unit 74, but also by the gas injection unit 73 (see FIG. 1). Gas may be injected from the lower side toward the outer edge. Thus, the processing liquid stored in the storage space 20 can be further prevented or suppressed from leaking downward from between the substrate 9 and the first holding unit 2a. Similarly, both the gas injection unit 73 and the suction unit 74 may be provided in the substrate processing apparatuses 1, 1b to 1d.

In the substrate processing apparatus 1, the first holding unit 2 is not necessarily fixed to the housing 11, and may be movable in the vertical direction or in the horizontal direction with respect to the housing 11, for example. The same applies to the substrate processing apparatuses 1a to 1d.

In the substrate processing apparatus 1, the rotation mechanism 33 for rotating the second holding unit 31 and the upper liquid receiving unit 5 for receiving the processing liquid scattered from the substrate 9 in rotation may be omitted. The same applies to the substrate processing apparatuses 1a to 1d. Further, in the substrate processing apparatus 1, 1a to 1d, the heating unit 72 for heating the substrate 9 may be omitted.

In the trap unit 45, a filter may be provided between the second flow passage 455 of the trap tank 451 and the recovery flow passage 83 to collect the entering heavy metal. Further, in the trap unit 45, a plurality of trap tanks 451 may be arranged in series between the lower drainage unit 62 and the recovery flow passage 83. Thereby, it can be further prevented or suppressed that the entering heavy metal enters the recovery flow channel 83.

Alternatively, instead of the trap tank 451 in the trap unit 45, a filter for collecting the catalyst may be provided between the lower drainage portion 62 and the recovery flow path 83. In this case, it is necessary to replace or clean the filter relatively frequently in order to prevent clogging of the filter. On the other hand, in the above-described substrate processing apparatus 1 in which the trap tank 451 is provided, the maintenance frequency of the structure for collecting the entering heavy metal can be reduced as compared with the case where the filter is provided.

For example, in step S36 described above, after the first rinse liquid is supplied along the inner peripheral surface 24 from the discharge port 42 provided on the inner peripheral surface 24 of the first holding unit 2c of the substrate processing apparatus 1c, the storage space The first rinse liquid is supplied from the nozzle 41 toward the first rinse liquid stored in 20, but the method of supplying the first rinse liquid may be variously changed. For example, the supply of the first rinse liquid from the nozzle 41 may be omitted, and the first rinse liquid may be supplied only from the discharge port 42. Alternatively, the discharge port 42 is not provided in the first holding unit 2 c, and the first rinse liquid is discharged to the inner periphery by discharging the first rinse liquid from the nozzle 41 toward the inner peripheral surface 24 of the first holding unit 2 c. It may be supplied along the surface 24. Alternatively, as in step S14, a mist-like first rinse liquid may be supplied from the nozzle 41 to the substrate 9. Furthermore, the first rinse solution does not necessarily have to be stored in the storage space 20.

In the processing of the substrate 9 in steps S11 to S23, the processing liquid is supplied to the substrate 9 between step S11 and step S13 to perform pre-processing (that is, processing performed before the catalyst application processing). May be Also in the processing of the substrate 9 in steps S31 to S45, the pretreatment of the substrate 9 may be performed between step S31 and step S33. In step S33, the catalyst solution may be stored in the storage space 20, and the catalyst application process may be performed on the substrate 9.

In the above-mentioned example, although processing of Steps S31 to S45 to substrate 9 is performed continuously in one substrate processing apparatus 1c, the processing concerned uses, for example, two substrate processing apparatuses 1 (see FIG. 1). It may be done. Specifically, in the first substrate processing apparatus 1, after the catalyst solution is supplied by supplying the catalyst solution to the substrate 9, the first rinse liquid is stored in the storage space 20 and the first rinse processing is performed. It will be. When the first rinse process is completed, the substrate 9 is carried into the second substrate processing apparatus 1, and after the plating solution is stored in the storage space 20 and the plating process is performed, the second rinse solution is supplied to the substrate 9 The second rinse process is performed. As described above, by processing the substrate 9 using the two substrate processing apparatuses 1, the discharge destination of the first rinse solution stored in the storage space 20 and the discharge destination of the plating solution below the substrate 9. And need not be provided separately, and the device structure can be simplified.

In the substrate processing apparatus 1, various processing solutions other than the above processing solution (catalyst solution, first rinse solution, plating solution, and second rinse solution) are supplied to the substrate 9, and various processes are performed on the substrate 9. May be For example, in a state where the substrate 9 is held by the first holding unit 2, the cleaning liquid may be stored in the storage space 20, and the substrate 9 may be cleaned. When the cleaning process is performed, bubbling cleaning may be performed by vibrating the cleaning solution stored in the storage space 20 or the like. Alternatively, after the nitrogen gas is supplied to the storage space 20 in a state where the substrate 9 is held by the first holding unit 2, the treatment liquid subjected to the deoxygenation treatment is stored in the storage space 20, thereby reducing oxygen. Processing of the substrate 9 may be performed in the state. The same applies to the substrate processing apparatuses 1a to 1d.

The substrate processing apparatuses 1, 1a to 1d may be used to process glass substrates used for display devices such as liquid crystal display devices, plasma displays, field emission displays (FEDs), etc. in addition to semiconductor substrates. Alternatively, the substrate processing apparatuses 1, 1a to 1d may be used to process an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, a photomask substrate, a ceramic substrate, a solar cell substrate and the like.

The configurations in the above embodiment and each modification may be combined as appropriate as long as no contradiction arises.

Although the invention has been described and described in detail, the foregoing description is illustrative and not restrictive. Accordingly, numerous modifications and variations are possible without departing from the scope of the present invention.

1, 1a-1d Substrate processing apparatus 2, 2a, 2c, 2d First holding unit 4 Processing solution supply unit 5, 5a, 5d Upper liquid receiving unit 6, 6c, 6d Lower liquid receiving unit 9 Substrate 11 Housing 20 Reservoir space 21 Through hole 22 upper opening 24 (of first holding portion) inner circumferential surface 31 (of through hole) 31 second holding portion 32 holding portion moving mechanism 33 rotation mechanism 51, 51 b first upper liquid receiving portion 52 second upper liquid receiving portion 64, 64d first liquid receiver 65, 65 d second liquid receiver 71, 71c cleaning unit 72 heating unit 73 gas injection unit 74 suction unit 91 (substrate) upper surface 92 (substrate) lower surface 643 (first lower) ) Upper opening J1 Central axis S11 to S23, S31 to S45 steps

Claims (7)

1. A substrate processing apparatus for processing a substrate, wherein
   A through hole having an upper opening through which the substrate can pass and a diameter of a part of the inner circumferential surface smaller than that of the substrate is provided, and the inner circumferential surface of the through hole is brought into contact with the outer edge portion of the substrate from below A first holding unit that holds the substrate in a horizontal state;
   A second holding portion located below the through hole;
   By moving the second holding unit upward through the through hole, the second holding unit is brought into contact with the lower surface of the substrate, and the substrate is transferred from the first holding unit to the second holding unit. A holding unit moving mechanism that
   A processing liquid supply unit for supplying a processing liquid onto the upper surface of the substrate;
   A lower liquid receiving portion located below the through hole;
   Equipped with
   The treatment liquid supplied from the treatment liquid supply unit is surrounded by the upper surface of the substrate held by the first holding unit and the inner circumferential surface of the through hole below the upper end of the through hole. Reserved in storage space,
   When the substrate is transferred from the first holding unit to the second holding unit, the processing liquid in the storage space flows downward from between the substrate and the inner circumferential surface of the through hole and is lowered. Received by the receiver.
2. The substrate processing apparatus according to claim 1, wherein
   The liquid receiving apparatus further includes a cleaning unit that cleans the lower liquid receiving unit.
3. The substrate processing apparatus according to claim 1 or 2, wherein
   A rotation mechanism configured to rotate the second holding portion above the upper end of the through hole;
   An upper liquid receiving portion for receiving a processing liquid scattered from the substrate rotating with the second holding portion;
   Further comprising
4. The substrate processing apparatus according to claim 3, wherein
   The upper liquid receiving portion includes a first upper liquid receiving portion that protrudes upward from the first holding portion continuously to the first holding portion.
5. The substrate processing apparatus according to claim 4, wherein
   The upper liquid receiving portion further includes a second upper liquid receiving portion that receives the processing liquid scattering from the substrate at a position radially outward and above the first upper liquid receiving portion.
6. The substrate processing apparatus according to any one of claims 1 to 5, wherein
   The lower liquid receiving portion
   A first lower liquid receiving portion disposed below the through hole and receiving the processing liquid flowing downward from between the substrate and the inner circumferential surface of the through hole;
   The lower side of the through hole is disposed radially inward of the first lower liquid receiving portion, and the upper opening of the first lower liquid receiving portion is closed. A second lower liquid receiving portion that receives the processing liquid flowing downward from between the inner circumferential surface and the lower liquid receiving portion;
   Equipped with
7. The substrate processing apparatus according to any one of claims 1 to 6, wherein
   The processing solution stored in the storage space is a plating solution used for the electroless plating process of the substrate.
   

Images