JP2019039039A - Substrate treatment apparatus - Google Patents

Abstract

To suitably clean the discharge path of treatment solution.SOLUTION: A first holding unit 2 of a substrate treatment apparatus 1 is provided with a through-hole 21. The through-hole 21 has an upper opening 22 through which a substrate 9 can pass. Some diameters of the inner peripheral surface 24 of the through-hole 21 are smaller than the diameter of the substrate 9. The first holding unit 2 brings the inner peripheral surface 24 of the through-hole 21 into contact with an outer edge part of the substrate 9 from below to hold the substrate 9 in a horizontal state. A treatment solution supply unit 4 supplies a treatment solution to an upper surface 91 of the substrate 9. A lower solution-receiving unit 6 is located below the through-hole 21. The treatment solution supplied from the treatment solution supply unit 4 is retained in a retention space 20 defined by the upper surface 91 of the substrate 9 held by the first holding unit 2 below the upper end of the through-hole 21 and the inner peripheral surface 24 of the through-hole 21. The treatment solution in the retention space 20 flows downward from between the substrate 9 and inner peripheral surface 24 of the through-hole 21, and is received by the lower solution-receiving unit 6. In the substrate treatment apparatus 1, the discharge path of the treatment solution can be suitably cleaned.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a technique for processing a substrate.

  Conventionally, in a manufacturing process of a semiconductor substrate (hereinafter simply referred to as “substrate”), various processes are performed on the substrate. For example, Patent Document 1 and Patent Document 2 disclose a plating apparatus that supplies a plating solution onto a substrate and performs a plating process.

  In the plating apparatus of Patent Document 1, first, a displacement plating treatment solution containing palladium is supplied to a rotating substrate, and the substrate is subjected to palladium plating. Subsequently, after the substrate is rinsed, a chemical reduction plating solution is supplied to the rotating substrate, and the substrate is plated. In the substrate processing apparatus, the plating solution supplied onto the substrate is scattered from the outer edge of the substrate to the surroundings by the rotation of the substrate, is received by the cup, and is discharged outside the apparatus.

  In the plating apparatus of Patent Document 2, the rotation of the substrate is stopped in a state where the plating solution is continuously supplied to the substrate, and after the incubation process for initial film formation on the substrate is performed, the substrate is rotated to form the plating film. A plating film growth process for growth is performed.

JP 2012-92390 A JP 2013-10996 A

  By the way, in the plating apparatus of patent document 1 and patent document 2, the cup by which the three discharge ports were laminated | stacked is arrange | positioned around a board | substrate rotation holding means, and the plating solution which scatters from the rotating board | substrate is received by a cup. . In the said cup, since the space | interval between the several laminated | stacked discharge ports is narrow, there exists a possibility that the washing | cleaning inside the cup which is a discharge path | route of a plating solution cannot be performed easily.

  The present invention has been made in view of the above-described problems, and an object of the present invention is to suitably clean the treatment liquid discharge path.

  The invention according to claim 1 is a substrate processing apparatus for processing a substrate, wherein the substrate has an upper opening through which a substrate can pass and a through hole having a part of the inner peripheral surface smaller in diameter than the substrate is provided. A first holding portion for holding the substrate in a horizontal state by bringing the inner peripheral surface of the through hole into contact with an outer edge portion of the substrate from below; a second holding portion positioned below the through hole; 2 By moving the holding part upward through the through hole, the second holding part is brought into contact with the lower surface of the substrate, and the substrate is transferred from the first holding part to the second holding part. A treatment liquid supplied from the treatment liquid supply unit, comprising: a holding part moving mechanism; a treatment liquid supply part for supplying a treatment liquid onto the upper surface of the substrate; and a lower liquid receiving part located below the through hole. Is held by the first holding part below the upper end of the through hole. Further, the substrate is stored in a storage space surrounded by the upper surface of the substrate and the inner peripheral surface of the through hole, and the substrate is transferred from the first holding unit to the second holding unit, thereby The processing liquid flows downward from between the substrate and the inner peripheral surface of the through hole and is received by the lower liquid receiving portion.

  A second aspect of the present invention is the substrate processing apparatus according to the first aspect, further comprising a cleaning section that cleans the lower liquid receiving section.

  A third aspect of the present invention is the substrate processing apparatus according to the first or second aspect, wherein the rotating mechanism rotates the second holding unit above the upper end of the through hole, and the second holding unit. And an upper liquid receiving part that receives the processing liquid scattered around from the substrate that rotates together with the part.

  According to a fourth aspect of the present invention, in the substrate processing apparatus of the third aspect, the upper liquid receiving portion protrudes upward from the first holding portion continuously from the first holding portion. An upper liquid receiving part is provided.

  Invention of Claim 5 is a substrate processing apparatus of Claim 4, Comprising: The process which the said upper liquid receiving part scatters from the said board | substrate in the radial direction outer side and upper direction rather than the said 1st upper liquid receiving part A second upper liquid receiving part for receiving the liquid is further provided.

  Invention of Claim 6 is a substrate processing apparatus as described in any one of Claim 1 thru | or 5, Comprising: The said lower liquid receiving part is arrange | positioned below the said through-hole, The said substrate and A first lower liquid receiving portion that receives a processing liquid flowing downward from between the inner peripheral surface of the through hole and a radially inner side of the first lower liquid receiving portion below the through hole. And a second lower liquid receiving part for receiving a processing liquid flowing downward from between the substrate and the inner peripheral surface of the through hole in a state where the upper opening of the first lower liquid receiving part is closed; Is provided.

  A seventh aspect of the present invention is the substrate processing apparatus according to any one of the first to sixth aspects, wherein the processing liquid stored in the storage space is used for electroless plating processing of the substrate. Plating solution.

  In the present invention, it is possible to suitably perform cleaning of the treatment liquid discharge path.

It is a longitudinal cross-sectional view of the substrate processing apparatus which concerns on 1st Embodiment. It is a longitudinal cross-sectional view of a substrate processing apparatus. It is a figure which shows the flow of a process of a board | substrate. It is a longitudinal cross-sectional view of a substrate processing apparatus. It is a longitudinal cross-sectional view of a substrate processing apparatus. It is a longitudinal cross-sectional view of a substrate processing apparatus. It is a figure which shows the structure of a plating solution unit. It is a longitudinal cross-sectional view of a trap part. It is a longitudinal cross-sectional view of another trap part. It is a longitudinal cross-sectional view of another substrate processing apparatus. It is a longitudinal cross-sectional view of another substrate processing apparatus. It is a longitudinal cross-sectional view of the substrate processing apparatus which concerns on 2nd Embodiment. It is a figure which shows the flow of a process of a board | substrate. It is a figure which shows the flow of a process of a board | substrate. It is a longitudinal cross-sectional view of a substrate processing apparatus. It is a longitudinal cross-sectional view of a substrate processing apparatus. It is a longitudinal cross-sectional view of a substrate processing apparatus. It is a longitudinal cross-sectional view of a substrate processing apparatus. It is a longitudinal cross-sectional view of a substrate processing apparatus. It is a longitudinal cross-sectional view of a substrate processing apparatus. It is a longitudinal cross-sectional view of a substrate processing apparatus. It is a longitudinal cross-sectional view of another substrate processing apparatus. It is a longitudinal cross-sectional view of another substrate processing apparatus. It is a longitudinal cross-sectional view of another substrate processing apparatus.

  1 and 2 are longitudinal sectional views showing the configuration of the substrate processing apparatus 1 according to the first embodiment of the present invention. The substrate processing apparatus 1 is a single-wafer type apparatus that processes semiconductor substrates 9 (hereinafter simply referred to as “substrates 9”) one by one. In the substrate processing apparatus 1, for example, a plating solution is supplied to the substrate 9 and an electroless plating process is performed on the substrate 9.

  The substrate processing apparatus 1 includes a housing 11, a first holding unit 2, a second holding unit 31, a holding unit moving mechanism 32, a rotating mechanism 33, a processing liquid supply unit 4, an upper liquid receiving unit 5, The lower liquid receiving unit 6, the cleaning unit 71, a heating unit 72 (see FIG. 4 described later), and a gas injection unit 73 are provided. The first holding unit 2, the second holding unit 31, the processing liquid supply unit 4, the upper liquid receiving unit 5, the lower liquid receiving unit 6, and the like are accommodated in the housing 11. The first holding unit 2, the holding unit moving mechanism 32, the rotating mechanism 33, the upper liquid receiving unit 5, and the lower liquid receiving unit 6 are fixed to the housing 11. The second holding part 31 is attached to the housing 11 so as to be movable in the vertical direction. The space in the housing 11 is, for example, a sealed space, and in the sealed space, an airflow (so-called down flow) is formed downward from the canopy portion of the housing 11.

  The 1st holding | maintenance part 2 is a substantially cylindrical site | part centering on the central axis J1 which faces an up-down direction. The first holding part 2 is provided with a through hole 21 penetrating in the vertical direction. The cross section perpendicular to the vertical direction of the through hole 21 is substantially circular with the central axis J1 as the center at each position in the vertical direction. The through hole 21 has an upper opening 22 and a lower opening 23. The upper opening 22 is located at the upper end of the through hole 21. The lower opening 23 is located at the lower end of the through hole 21. The upper opening 22 and the lower opening 23 are substantially circular perpendicular to the central axis J1.

  The diameter of the upper opening 22 (hereinafter simply referred to as “diameter”) is larger than the diameter of the substrate 9. Therefore, the substrate 9 can pass through the upper opening 22 of the through hole 21. A part of the diameter of the inner peripheral surface 24 of the through hole 21 in the vertical direction is smaller than the diameter of the substrate 9. In the example shown in FIG. 1, the diameter of the inner peripheral surface 24 of the through-hole 21 (that is, the diameter of the through-hole 21) gradually decreases as the distance from the upper opening 22 increases and decreases between the upper opening 22 and the lower opening 23. It becomes smaller than the diameter of the substrate 9 at a predetermined position in the direction. Above the predetermined position, the diameter of the through hole 21 is larger than the diameter of the substrate 9, and below the predetermined position, the diameter of the through hole 21 is smaller than the diameter of the substrate 9. Further, in the vicinity of the lower opening 23, the diameter of the through hole 21 is substantially constant in the vertical direction and is smaller than the diameter of the substrate 9. As shown in FIG. 1, the first holding unit 2 holds the substrate 9 in a substantially horizontal state by bringing the inner peripheral surface 24 of the through hole 21 into contact with the outer edge of the substrate 9 from below. The outer edge portion of the substrate 9 is in contact with the inner peripheral surface 24 of the first holding portion 2 over substantially the entire circumference.

  The second holding part 31 is located below the through hole 21 of the first holding part 2 and below the substrate 9. The second holding unit 31 includes a chuck unit 311 and a support unit 312. The chuck portion 311 is a substantially disk-shaped part centering on the central axis J1. The diameter of the chuck portion 311 is smaller than the minimum diameter of the through hole 21 of the first holding portion 2 (in the example shown in FIG. 1, the diameter of the lower opening 23) and the diameter of the substrate 9. The chuck portion 311 is provided with a vacuum chuck mechanism (not shown) that can hold the lower surface of the substrate 9 by suction. The support portion 312 is connected to the center portion of the lower surface of the chuck portion 311 and is a substantially cylindrical portion that supports the chuck portion 311 from below.

  The holding part moving mechanism 32 is a mechanism for moving the second holding part 31 in the vertical direction. For example, the holding unit moving mechanism 32 is disposed below the second holding unit 31. The second holding unit 31 is moved upward from the retracted position shown in FIG. 1 by the holding unit moving mechanism 32, thereby contacting the lower surface 92 of the substrate 9 held in the horizontal state by the first holding unit 2. The substrate 9 is sucked and held from below. Then, when the second holding portion 31 is moved further upward through the through hole 21 by the holding portion moving mechanism 32, the substrate 9 is moved from the first holding portion 2 to the second holding portion as shown in FIG. It is handed over to 31 and moves upward together with the second holding part 31 from the first holding part 2.

  The rotation mechanism 33 is a mechanism that rotates the second holding portion 31 about the central axis J1. For example, the rotation mechanism 33 is disposed below the second holding unit 31. As illustrated in FIG. 2, the rotation mechanism 33 rotates the second holding unit 31 and the substrate 9 in a state where the substrate 9 is spaced upward from the first holding unit 2. Specifically, the rotation mechanism 33 rotates the second holding unit 31 above the upper end of the through hole 21 of the first holding unit 2.

  The processing liquid supply unit 4 supplies a processing liquid onto the upper surface 91 of the substrate 9. In the example shown in FIGS. 1 and 2, the processing liquid supply unit 4 includes a nozzle 41 that is disposed above the center of the substrate 9. The nozzle 41 is connected to a processing liquid supply source (not shown), and the processing liquid is discharged from the nozzle 41 toward the upper surface 91 of the substrate 9. In the substrate processing apparatus 1, a plurality of types of processing liquids are sequentially supplied from the nozzle 41 toward the substrate 9. The nozzle 41 includes a plurality of nozzle elements respectively corresponding to a plurality of types of processing liquids. Or the lower end part of the nozzle 41 may be provided with a plurality of discharge ports respectively corresponding to a plurality of types of processing liquids.

  The upper liquid receiving unit 5 is disposed outside the second holding unit 31 and the substrate 9 in the radial direction centered on the central axis J1 (hereinafter simply referred to as “radial direction”). And the circumference | surroundings of the board | substrate 9 are enclosed over a perimeter. The upper liquid receiving unit 5 is opposed to the substrate 9 held by the second holding unit 31 in the radial direction above the first holding unit 2. The upper liquid receiving unit 5 receives the processing liquid scattered around from the substrate 9 that rotates together with the second holding unit 31.

  The upper liquid receiving part 5 includes a first upper liquid receiving part 51, a second upper liquid receiving part 52, and an outer drainage part 53. The first upper liquid receiver 51 is a substantially cylindrical portion centered on the central axis J1. The first upper liquid receiver 51 projects upward from the upper end of the first holder 2 continuously to the first holder 2. The inner peripheral surface 511 of the first upper liquid receiver 51 is, for example, radially outward over substantially the entire circumference in the circumferential direction (hereinafter, simply referred to as “circumferential direction”) centered on the central axis J1. It is a curved surface that curves in a convex shape. The lower end of the inner peripheral surface 511 of the first upper liquid receiver 51 is continuous with the upper end of the inner peripheral surface 24 of the first holding unit 2.

  The second upper liquid receiver 52 is a substantially cylindrical member centered on the central axis J1. The second upper liquid receiver 52 is disposed on the radially outer side than the first upper liquid receiver 51 and surrounds the periphery of the substrate 9 and the first upper liquid receiver 51 over the entire circumference. The upper end portion of the second upper liquid receiving portion 52 extends above the upper end portion of the first upper liquid receiving portion 51. The second upper liquid receiving part 52 includes a substantially cylindrical side wall part centering on the central axis J1 and a canopy part extending radially inward from the upper end part of the side wall part. The canopy portion may be an inclined portion that goes upward as it goes radially inward. The processing liquid received by the second upper liquid receiving part 52 is discharged to the outside of the housing 11 through the outer liquid discharging part 53.

  As shown in FIG. 1, the lower liquid receiving portion 6 is disposed radially inward of the first holding portion 2 and radially outward of the second holding portion 31, and surrounds the second holding portion 31 in its entirety. Enclose over the circumference. The lower liquid receiving unit 6 is disposed below the through hole 21 of the first holding unit 2 and below the substrate 9 held by the first holding unit 2. The lower liquid receiving unit 6 includes a lower liquid receiving block 61 and a lower liquid discharging unit 62. The lower liquid receiving block 61 is a substantially cylindrical portion centered on the central axis J1. The lower liquid receiving block 61 is located below the substrate 9 held by the first holding unit 2 and faces the lower surface 92 of the substrate 9 in the vertical direction. The upper end of the lower liquid receiving block 61 is spaced downward from the lower surface 92 of the substrate 9.

  The outer peripheral surface 63 of the lower liquid receiving block 61 is an inclined surface that goes radially outward as it goes downward from the upper end of the lower liquid receiving block 61. The outer peripheral surface 63 of the lower liquid receiving block 61 is opposed to the inner peripheral surface 24 in the radial direction without contacting the inner peripheral surface 24 of the first holding unit 2. The lower end of the inner peripheral surface 24 of the first holding unit 2 is located between the upper end and the lower end of the outer peripheral surface 63 of the lower liquid receiving block 61. The processing liquid flowing downward from the gap between the first holding unit 2 and the lower liquid receiving block 61 is discharged to the outside of the housing 11 through the lower liquid discharging part 62.

The gas injection unit 73 injects gas from below toward the outer edge of the substrate 9 held by the first holding unit 2. In the example shown in FIG. 1, the gas injection unit 73 is provided in the lower liquid receiving block 61 and injects gas from the outer peripheral surface 63 of the lower liquid receiving block 61 over substantially the entire periphery of the outer edge portion of the substrate 9. The gas injection unit 73 is not necessarily provided in the lower liquid receiving block 61. For example, the gas injection unit 73 is provided below the portion of the inner peripheral surface 24 of the first holding unit 2 that is in contact with the outer edge portion of the substrate 9, and the substrate The gas may be injected from below toward the outer edge portion of 9. The gas injected from the gas injection unit 73 is, for example, an inert gas such as nitrogen (N ₂ ) gas. The gas from the gas injection unit 73 is not limited to the inert gas, and may be variously changed.

  A heating unit 72 shown in FIG. 4 described later heats the substrate 9 held by the first holding unit 2. The heating unit 72 is, for example, an electric heater disposed above the first holding unit 2 and the second holding unit 31. In a state where the heating unit 72 is not used for heating the substrate 9, for example, the heating unit 72 retracts from the upper side of the first holding unit 2 and the second holding unit 31 to the side. Therefore, in FIG. 1 and FIG. 2 etc., illustration of the heating unit 72 is omitted. The structure and arrangement of the heating unit 72 may be variously changed. For example, the heating unit 72 may be a light irradiation unit that irradiates and heats the substrate 9 with light.

  The cleaning unit 71 shown in FIGS. 1 and 2 cleans the lower liquid receiving unit 6 by supplying a cleaning liquid to the lower liquid receiving unit 6. In the example shown in FIG. 1, the cleaning unit 71 is provided in a portion of the first holding unit 2 that faces the outer peripheral surface 63 of the lower liquid receiving block 61 in the radial direction. The cleaning unit 71 discharges the cleaning liquid toward the outer peripheral surface 63 of the lower liquid receiving block 61. The cleaning liquid discharged from the cleaning unit 71 is supplied over substantially the entire circumference of the outer peripheral surface 63 of the lower liquid receiving block 61. The cleaning unit 71 is not necessarily provided in the first holding unit 2 and may be disposed in another place.

  Next, an example of the processing flow of the substrate 9 by the substrate processing apparatus 1 will be described with reference to FIG. 4 to 6 are longitudinal sectional views showing the substrate processing apparatus 1 during the processing of the substrate 9. When the substrate 9 is processed by the substrate processing apparatus 1, first, as shown in FIG. 2, the substrate 9 is held in a horizontal state by the second holding unit 31 (step S11). The substrate 9 held by the second holding unit 31 is located above the first holding unit 2 and the first upper liquid receiving unit 51 and faces the second upper liquid receiving unit 52 in the radial direction.

  Subsequently, the rotation of the second holding unit 31 and the substrate 9 by the rotation mechanism 33 is started (step S12). Then, the catalyst solution is supplied from the processing liquid supply unit 4 to the upper surface 91 of the rotating substrate 9 (step S13). The catalyst solution is a solution containing a catalyst (for example, heavy metal ions such as palladium (Pd)) used for electroless plating described later. In step S <b> 13, for example, a liquid columnar catalyst solution is discharged from the nozzle 41 toward the center of the substrate 9.

  The catalyst solution supplied to the central portion of the substrate 9 moves from the central portion of the substrate 9 toward the outer edge portion by centrifugal force, and is applied over the entire upper surface 91 of the substrate 9. The catalyst solution that has reached the outer edge portion of the substrate 9 is scattered around by the centrifugal force and is received by the second upper liquid receiving portion 52 of the upper liquid receiving portion 5. The catalyst solution received by the second upper liquid receiving part 52 is discharged to the outside of the housing 11 through the outer liquid discharge part 53. The discharged catalyst solution may be recovered and reused, for example, or discarded. By supplying the catalyst solution to the substrate 9 (that is, applying the catalyst) for a predetermined time, the catalyst (for example, palladium) is adsorbed on the upper surface 91 of the substrate 9.

  When the supply of the catalyst solution is stopped and the catalyst application process is completed, the first rinse liquid is supplied from the processing liquid supply unit 4 to the upper surface 91 of the rotating substrate 9 (step S14). The first rinse liquid is, for example, pure water. In step S <b> 14, for example, a first rinsing liquid in the form of a mist (that is, a large number of microdroplets that spread in a wide range and move downward at a relatively low speed) is discharged from the nozzle 41 and supplied onto the upper surface 91 of the substrate 9. Is done. The first rinse liquid supplied onto the upper surface 91 of the substrate 9 spreads outward in the radial direction by centrifugal force, and thereby the catalyst solution is removed from the substrate 9. The first rinse liquid scattered from the substrate 9 to the surroundings is received by the second upper liquid receiving part 52 of the upper liquid receiving part 5 and discharged to the outside of the housing 11 via the outer liquid discharging part 53. The first rinse liquid received by the second upper liquid receiver 52 is preferably discarded via a route different from the catalyst solution discharge route in step S13. Thereby, the recovery efficiency of the catalyst solution can be improved.

  When the supply of the first rinse liquid to the substrate 9 (that is, the first rinse process) is performed for a predetermined time, the supply of the first rinse liquid is stopped. Further, the rotation of the substrate 9 and the second holding unit 31 by the rotation mechanism 33 is also stopped (step S15).

  Next, the second holding portion 31 is moved downward by the holding portion moving mechanism 32, and the outer edge portion of the substrate 9 contacts the inner peripheral surface 24 of the first holding portion 2. The second holding portion 31 further moves downward, and is spaced downward from the lower surface 92 of the substrate 9 as shown in FIG. Thereby, the board | substrate 9 is handed over from the 2nd holding | maintenance part 31 to the 1st holding | maintenance part 2, and is hold | maintained in a horizontal state by the 1st holding | maintenance part 2 below the upper end of the through-hole 21 (step S16). .

  When the substrate 9 is held by the first holding unit 2, gas injection is started from the gas injection unit 73 toward the outer edge portion of the substrate 9 held by the first holding unit 2. Then, the plating solution is supplied from the processing solution supply unit 4 to the upper surface 91 of the substrate 9 (step S17). The plating solution is a heavy metal (for example, nickel (Ni), copper (Cu), cobalt (Co), cobalt tungsten boron (CoWB), gold (Au) or silver (Ag))) plated on the upper surface 91 of the substrate 9. Contains ions and reducing agents. In step S <b> 17, for example, a liquid columnar plating solution is discharged from the nozzle 41 toward the center of the substrate 9. The plating solution supplied to the central portion of the substrate 9 spreads outward in the radial direction, and the upper surface 91 of the substrate 9 is covered with the plating solution over the entire surface. On the upper surface 91 of the substrate 9 covered with the plating solution, initial nuclei of the metal contained in the plating solution are deposited.

  As shown in FIG. 4, the plating solution supplied from the processing solution supply unit 4 is a space 20 surrounded by the upper surface 91 of the substrate 9 held by the first holding unit 2 and the inner peripheral surface 24 of the through hole 21. (Hereinafter referred to as “reservation space 20”). In other words, the storage space 20 is a space above the upper surface 91 of the substrate 9 in the through hole 21. In the substrate processing apparatus 1, as described above, gas is injected from below toward the outer edge portion of the substrate 9 held by the first holding unit 2, so that the outer edge portion of the substrate 9 and the through holes 21 are temporarily provided. Even when a gap exists in a part in the circumferential direction between the inner peripheral surface 24 and the plating solution, it is prevented or suppressed from leaking downward from the gap.

  When the plating solution is stored up to a predetermined depth in the storage space 20, the supply of the plating solution from the nozzle 41 is temporarily stopped. The plating solution stored in the storage space 20 is in contact with the inner peripheral surface 24 of the through hole 21. The depth of the plating solution stored in the storage space 20 (that is, the vertical distance between the surface of the plating solution and the upper surface 91 of the substrate 9) is substantially uniform over the entire surface of the substrate 9. The depth of the plating solution in the storage space 20 is such that the plating solution liquid film (hereinafter referred to as “a”) that can be held on the upper surface 91 of the substrate 9 by surface tension in the substrate 9 in a state where the outer edge portion is not in contact with other members. It is larger than the thickness of the liquid film due to surface tension. Specifically, the depth of the plating solution in the storage space 20 is larger than the thickness of the liquid film due to the surface tension at the outer edge portion of the substrate 9, and more than the thickness of the liquid film due to the surface tension at the center portion of the substrate 9. large.

  By covering the upper surface 91 of the substrate 9 with the plating solution stored in the storage space 20 for a predetermined time, the metal contained in the plating solution is formed on the upper surface 91 of the substrate 9 (specifically, on the upper surface 91). The metal layer is formed on the substrate 9. In the substrate processing apparatus 1, the substrate 9 is heated by the heating unit 72 while the upper surface 91 of the substrate 9 is covered with the plating solution stored in the storage space 20. Thereby, deposition of the metal on the upper surface 91 of the substrate 9 is promoted.

  Subsequently, the second holding unit 31 is moved upward by the holding unit moving mechanism 32 to suck and hold the lower surface 92 of the substrate 9. Further, the gas injection by the gas injection unit 73 is stopped. Then, the second holding unit 31 further moves upward, and the substrate 9 is separated upward from the first holding unit 2 as shown in FIG. Thereby, the board | substrate 9 is delivered from the 1st holding | maintenance part 2 to the 2nd holding | maintenance part 31, and is hold | maintained in a horizontal state by the 2nd holding | maintenance part 31 (step S18). The plating solution stored in the storage space 20 flows downward from the gap between the outer edge portion of the substrate 9 and the inner peripheral surface 24 of the first holding portion 2, and the lower liquid receiving block 61 of the lower liquid receiving portion 6. Received by. The plating solution received by the lower liquid receiving part 6 flows downward along the outer peripheral surface 63 of the lower liquid receiving block 61 and is discharged to the outside of the housing 11 via the lower liquid discharging part 62.

  As shown in FIG. 6, when the substrate 9 is arranged at the same vertical position as the first upper liquid receiver 51, the rotation of the substrate 9 and the second holding unit 31 is started by the rotation mechanism 33. (Step S19). The rotation speed of the substrate 9 in step S19 is, for example, 300 rpm to 1000 rpm. Subsequently, the discharge of the liquid columnar plating solution is started from the nozzle 41 toward the center of the upper surface 91 of the substrate 9. The plating solution supplied to the central portion of the substrate 9 spreads radially outward on the upper surface 91 of the substrate 9 by centrifugal force, and is supplied to the entire upper surface 91 of the substrate 9. Thereby, an electroless plating process (hereinafter simply referred to as “plating process”) on the upper surface 91 of the substrate 9 proceeds (step S20).

  In the substrate processing apparatus 1, the supply of the plating solution from the processing solution supply unit 4 onto the substrate 9 may be continued during steps S18 and S19. Further, while the plating process of the substrate 9 is being performed in step S20, the substrate 9 may be heated by the heating unit 72 (see FIG. 4) as in the plating process in step S17, and the plating process may be promoted. .

  The plating solution that has reached the outer edge portion of the rotating substrate 9 is scattered by the centrifugal force and is received by the first upper liquid receiving portion 51 that faces the substrate 9 in the radial direction. The plating solution received by the first upper liquid receiving portion 51 flows downward along the inner peripheral surface 511 of the first upper liquid receiving portion 51 and the inner peripheral surface 24 of the first holding portion 2, and the lower liquid receiving portion. 6 is received by the lower liquid receiving block 61. The plating solution received by the lower liquid receiving unit 6 is discharged to the outside of the housing 11 through the lower liquid discharging unit 62. The discharged plating solution may be collected and reused, for example, or discarded. A metal is plated on the upper surface 91 of the substrate 9 by supplying a plating solution to the substrate 9 (that is, a plating process) for a predetermined time.

  In the substrate processing apparatus 1 illustrated in FIG. 1, the plating solution discharged to the outside of the housing 11 is collected and reused for processing the substrate 9. FIG. 7 is a view showing the structure of the plating solution unit 8 connected to the substrate processing apparatus 1. The plating solution unit 8 collects the plating solution discharged from the housing 11 of the substrate processing apparatus 1 and supplies the plating solution to the nozzle 41 of the substrate processing apparatus 1. The plating solution unit 8 is a part of the processing solution supply source described above. The plating solution unit 8 may be a part of the substrate processing apparatus 1.

  The plating solution unit 8 includes a plating solution tank 81, a supply channel 82, a recovery channel 83, and a circulation channel 84. The plating solution tank 81 is a storage tank that stores the plating solution. The supply channel 82 connects the plating solution tank 81 and the nozzle 41 of the substrate processing apparatus 1. The plating solution in the plating solution tank 81 is supplied to the nozzle 41 through the supply channel 82 and is discharged from the nozzle 41 toward the upper surface 91 of the substrate 9. When the plating solution in the plating solution tank 81 decreases below a predetermined amount, the plating solution is replenished from a plating solution supply source (not shown) to the plating solution tank 81.

  A circulation channel 84 that branches from the middle of the supply channel 82 is connected to the plating solution tank 81. While the discharge of the plating solution from the nozzle 41 is stopped, the plating solution sent from the plating solution tank 81 to the supply channel 82 is returned to the plating solution tank 81 via the circulation channel 84. By circulating the plating solution using the circulation flow path 84, the components and temperature uniformity of the plating solution stored in the plating solution tank 81 can be improved.

  The recovery channel 83 connects the plating solution tank 81 and the lower drainage part 62 of the substrate processing apparatus 1. Specifically, the recovery channel 83 is connected to the lower drainage unit 62 via the trap unit 45 of the substrate processing apparatus 1. The plating solution discharged from the lower drainage portion 62 to the outside of the housing 11 is guided to the plating solution tank 81 through the trap portion 45 and the recovery passage 83 and is collected in the plating solution tank 81. The recovered plating solution is re-supplied to the nozzle 41 via the supply channel 82.

  FIG. 8 is a longitudinal sectional view showing the structure of the trap portion 45. The trap unit 45 includes a trap tank 451 and a partition wall 452. The trap tank 451 is a substantially cylindrical hermetic container extending in the vertical direction, and is filled with a plating solution. The partition wall 452 is provided inside the trap tank 451. The partition wall 452 extends downward from the upper end of the trap tank 451. The lower end of the partition wall 452 is spaced upward from the lower end of the trap tank 451.

  The partition wall 452 divides the internal space of the trap tank 451 from the upper end to the lower portion into two spaces. In the following description, a space extending in the vertical direction on the left side of the partition wall 452 in FIG. 8 is referred to as a “first flow path 454”. Further, a space extending in the vertical direction on the right side of the partition wall 452 in FIG. 8 is referred to as a “second flow path 455”. A lower drainage unit 62 is connected to the upper end of the first flow path 454. The lower part of the first flow path 454 is continuous with the lower part of the second flow path 455 below the partition wall 452. The lower part of the first channel 454 is an inclined channel that approaches the second channel 455 as it goes downward. A recovery channel 83 of the plating solution unit 8 is connected to the upper end of the second channel 455.

  The lower end of the trap tank 451 is provided with a substantially cylindrical lower recess 453 extending in the vertical direction. The lower recess 453 is located below the first channel 454 and the second channel 455. The lower recess 453 protrudes downward from a portion of the trap tank 451 where the lower part of the first flow path 454 and the lower part of the second flow path 455 are continuous. In the example shown in FIG. 8, the lower recess 453 is located vertically below the second flow path 455. The lower recess 453 is connected to the lower part of the first channel 454 and the lower part of the second channel 455. A boundary portion between the lower recessed portion 453 and the inclined channel below the first channel 454 is a stepped portion that bends vertically downward from the inclined channel.

  In the substrate processing apparatus 1, the plating solution discharged to the outside of the housing 11 (see FIG. 7) through the lower drainage part 62 flows from the upper end of the first flow path 454 of the trap tank 451. The plating solution flows downward in the first flow path 454, reverses below the partition wall 452 and above the lower recess 453, and flows upward in the second flow path 455. The plating solution that has reached the upper end of the second channel 455 is guided to the plating solution tank 81 (see FIG. 7) through the recovery channel 83 and stored in the plating solution tank 81. In FIG. 8, the flow of the plating solution in the trap tank 451 is indicated by thin arrows (the same applies to FIG. 9).

  In the substrate processing apparatus 1, during the plating process of the substrate 9, a part of the catalyst (for example, palladium) may be separated from the substrate 9 and flow into the lower liquid receiver 6. If the catalyst flows into the recovery flow path 83, an electroless plating reaction may occur in the recovery flow path 83 or the plating solution tank 81, and the metal in the plating solution may precipitate to cause clogging of the flow path. There is.

  In the substrate processing apparatus 1, as described above, by providing the trap portion 45 between the lower drainage portion 62 and the recovery flow path 83, the catalyst such as palladium peeled off from the substrate 9 and the electroless plating reaction It is possible to prevent or suppress the metal generated by the above from entering the recovery channel 83. Specifically, the catalyst or the metal (hereinafter collectively referred to as “entry heavy metal”) that has flowed into the trap tank 451 together with the plating solution has a specific gravity greater than that of the plating solution, so Is removed from the flow of the plating solution and settles into the lower recess 453 provided below the flow path of the plating solution. The entering heavy metal in the lower recess 453 is prevented from returning to the first flow path 454 and the second flow path 455 by the above-described stepped portion or the like. Therefore, it is possible to prevent or suppress the entering heavy metal from rising in the second flow path 455 and entering the recovery flow path 83.

  The entering heavy metal accumulated in the lower recess 453 is removed from the trap tank 451 by supplying an acid cleaning solution (for example, aqua regia or nitric acid) to the trap tank 451 during maintenance of the substrate processing apparatus 1 or the like. . The trap tank 451 is provided with an exhaust unit for removing hydrogen generated during the acid cleaning.

  FIG. 9 is a longitudinal sectional view showing the structure of another preferred trap portion 45a. The trap unit 45a includes a trap tank 451a having a shape different from that of the trap tank 451 shown in FIG. In the trap tank 451a, the lower part of the second flow path 455 is an inclined flow path that approaches the first flow path 454 as it goes downward. The first channel 454 extends in the vertical direction, and a lower recess 453 is provided vertically below the first channel 454. In the case where the trap portion 45a is provided instead of the trap portion 45, the ingress heavy metal in the plating solution that has flowed into the first flow path 454 from the lower drainage portion 62 settles into the lower recess 453 in the same manner as described above. To do. For this reason, it is possible to prevent or suppress the entering heavy metal from rising inside the second flow path 455 and entering the recovery flow path 83.

  In the substrate processing apparatus 1 shown in FIG. 6, when the supply of the plating solution to the substrate 9 is stopped and the plating process is finished, the second rinse solution is supplied from the processing solution supply unit 4 to the upper surface 91 of the rotating substrate 9. Is supplied (step S21). The second rinse liquid is, for example, pure water. In step S <b> 21, for example, a liquid columnar second rinse liquid is discharged from the nozzle 41 toward the center of the substrate 9. In this case, the physical force applied to the substrate 9 by the first rinse liquid when the first rinse liquid is supplied in step S14 is the physical force applied to the substrate 9 by the second rinse liquid when the second rinse liquid is supplied in step S21. Less than force. The physical force applied to the substrate 9 by the first rinse liquid is a physical force applied to the substrate 9 from the first rinse liquid (ie, mechanical force) when the first rinse liquid and the substrate 9 are in contact with each other. For example, an impact force applied to the substrate 9 by the collision of the first rinse liquid. The same applies to the physical force applied to the substrate 9 by the second rinse liquid.

  The second rinse liquid supplied onto the upper surface 91 of the substrate 9 spreads outward in the radial direction by centrifugal force, whereby the plating solution is removed from the substrate 9. The second rinse liquid that scatters from the substrate 9 to the surroundings is received by the first upper liquid receiver 51 and passes through the inner peripheral surface 511 of the first upper liquid receiver 51 and the inner peripheral surface 24 of the first holder 2. And received by the lower liquid receiving block 61 of the lower liquid receiving portion 6. The second rinse liquid received by the lower liquid receiving part 6 is discharged to the outside of the housing 11 through the lower liquid discharging part 62. The second rinse liquid received by the lower liquid receiver 6 is preferably discarded via a route different from the plating solution discharge route in step S20. Thereby, the collection efficiency of the plating solution can be improved. When the supply of the second rinse liquid to the substrate 9 (that is, the second rinse process) is performed for a predetermined time, the supply of the second rinse liquid is stopped.

  Thereafter, the rotation speed of the substrate 9 by the rotation mechanism 33 increases. Thereby, the 2nd rinse liquid on the board | substrate 9 moves to radial direction outward, and is scattered from the outer edge part of the board | substrate 9 to radial direction outward. By continuing the rotation of the substrate 9 for a predetermined time, a drying process for removing the liquid such as the second rinse liquid from the substrate 9 is performed (step S22). When the drying process of the substrate 9 is completed, the rotation of the substrate 9 and the second holding unit 31 by the rotation mechanism 33 is stopped, and the process for the substrate 9 is completed (step S23). In the substrate processing apparatus 1, the above-described steps S <b> 11 to S <b> 23 are sequentially performed on the plurality of substrates 9 to sequentially process the plurality of substrates 9.

  In the substrate processing apparatus 1, for example, when the processing of a predetermined number of substrates 9 is completed, the apparatus is cleaned. In the cleaning process, for example, the cleaning liquid is discharged from the cleaning unit 71 toward the outer peripheral surface 63 of the lower liquid receiving block 61, and the lower liquid receiving part 6 is cleaned. Thereby, processing liquids, such as the plating liquid and the 2nd rinse liquid which have adhered to the lower liquid receiving part 6, are removed. Further, even when a part of the catalyst is peeled off from the substrate 9 and flows into the lower liquid receiving part 6 during the plating process of the substrate 9, the catalyst is also removed from the lower liquid receiving part 6 by the washing process. Removed.

  As described above, the substrate processing apparatus 1 includes the first holding unit 2, the second holding unit 31, the holding unit moving mechanism 32, the processing liquid supply unit 4, and the lower liquid receiving unit 6. The first holding part 2 is provided with a through hole 21. The through hole 21 has an upper opening 22 through which the substrate 9 can pass. A diameter of a part of the inner peripheral surface 24 of the through hole 21 is smaller than that of the substrate 9. The first holding unit 2 holds the substrate 9 in a horizontal state by bringing the inner peripheral surface 24 of the through hole 21 into contact with the outer edge of the substrate 9 from below. The second holding part 31 is located below the through hole 21. The holding part moving mechanism 32 moves the second holding part 31 upward through the through-hole 21 to bring the second holding part 31 into contact with the lower surface 92 of the substrate 9, so that the second holding part 31 performs the second holding from the first holding part 2. The substrate 9 is transferred to the unit 31. The processing liquid supply unit 4 supplies a processing liquid onto the upper surface 91 of the substrate 9. The lower liquid receiver 6 is located below the through hole 21.

  The processing liquid supplied from the processing liquid supply unit 4 is surrounded by the upper surface 91 of the substrate 9 held by the first holding unit 2 below the upper end of the through hole 21 and the inner peripheral surface 24 of the through hole 21. Stored in the storage space 20 to be stored. Thereby, it is possible to suppress the movement of the processing liquid on the upper surface 91 of the substrate 9 when the processing liquid is supplied onto the substrate 9 and the liquid processing is performed. As a result, the processing of the upper surface 91 of the substrate 9 with the processing liquid can be performed stably.

  In the substrate processing apparatus 1, when the substrate 9 is transferred from the first holding unit 2 to the second holding unit 31, the processing liquid in the storage space 20 is transferred from between the substrate 9 and the inner peripheral surface 24 of the through hole 21. It flows downward and is received by the lower liquid receiver 6. Thereby, compared with the case where the cup part is provided around the first holding part to receive the processing liquid scattered from the substrate, the substrate processing apparatus 1 can be downsized in the radial direction. In addition, when receiving the processing liquid in the cup part, the gap between the cup part and the first holding part is relatively small, so that it is difficult to clean the inner peripheral surface of the cup part. On the other hand, in the substrate processing apparatus 1 described above, the gap between the lower liquid receiving unit 6 and the first holding unit 2 (for example, the radial direction between the lower end of the first holding unit 2 and the lower liquid receiving block 61). The gap) can be increased relatively easily. Therefore, the cleaning liquid can be supplied to a desired part of the lower liquid receiving part 6, and the lower liquid receiving part 6 can be suitably cleaned. In other words, the substrate processing apparatus 1 can suitably clean the processing liquid discharge path.

  The processing solution stored in the storage space 20 in the substrate processing apparatus 1 is, for example, a plating solution used for electroless plating processing of the substrate 9. In the substrate processing apparatus 1, as described above, cleaning of the plating solution discharge path can be suitably performed. As a result, it is possible to prevent or suppress problems such as metal adhesion in the discharge route.

  As described above, the substrate processing apparatus 1 further includes the cleaning unit 71 that cleans the lower liquid receiving unit 6. Thereby, the cleaning liquid can be supplied from the cleaning unit 71 to a desired portion of the lower liquid receiving unit 6. As a result, cleaning of the treatment liquid discharge path can be suitably performed by the cleaning unit 71.

  The substrate processing apparatus 1 further includes a rotation mechanism 33 and an upper liquid receiving unit 5. The rotation mechanism 33 rotates the second holding portion 31 above the upper end of the through hole 21. The upper liquid receiving unit 5 receives the processing liquid scattered around from the substrate 9 that rotates together with the second holding unit 31. Thus, the processing efficiency of the substrate 9 can be improved by supplying a new processing liquid to the rotating substrate 9 and performing the processing. In the above example, the plating solution is supplied as the processing solution to the rotating substrate 9, and the efficiency of the plating process for the substrate 9 is improved.

  In the substrate processing apparatus 1, the upper liquid receiver 5 includes a first upper liquid receiver 51 that is continuous with the first holder 2 and protrudes upward from the first holder 2. Thereby, when processing the substrate 9 with the processing liquid stored in the storage space 20 (step S17), and when processing the substrate 9 performed by supplying the processing liquid to the rotating substrate 9 (step S20). Thus, the discharge path for the processing liquid (in the above example, the plating liquid) can be shared. As a result, the structure of the substrate processing apparatus 1 can be simplified.

  As described above, the upper liquid receiver 5 further includes the second upper liquid receiver 52 that receives the processing liquid scattered from the substrate 9 on the radially outer side and above the first upper liquid receiver 51. As a result, a plurality of types of processing liquids scattered from the substrate 9 can be received separately by the first upper liquid receiver 51 and the second upper liquid receiver 52. As a result, the substrate processing apparatus 1 can easily separate and collect or discard a plurality of types of processing liquids used for processing the substrate 9.

  FIG. 10 is a longitudinal sectional view showing another preferred substrate processing apparatus 1a. In the substrate processing apparatus 1a, a first holding unit 2a having a structure different from that of the first holding unit 2 is provided instead of the first holding unit 2 shown in FIG. Further, the gas injection unit 73 shown in FIG. 1 is omitted. In the first holding part 2 a, a step part 25 is provided on the inner peripheral surface 24 of the through hole 21. The upper surface 26 of the step portion 25 is a substantially annular surface that is substantially perpendicular to the vertical direction. The outer diameter of the upper surface 26 of the step portion 25 is larger than the diameter of the substrate 9. The inner diameter of the upper surface 26 of the step portion 25 is smaller than the diameter of the substrate 9. When the substrate 9 is held by the first holding unit 2 a, the outer edge portion of the lower surface 92 of the substrate 9 contacts the upper surface 26 of the step portion 25. The first holding part 2 a is provided with a suction part 74 that faces the outer edge part of the substrate 9 that is in contact with the upper surface 26 of the step part 25. The suction part 74 is provided over substantially the entire circumference in the circumferential direction, and sucks the outer edge part of the substrate 9. The suction portion 74 is, for example, a substantially annular shape centered on the central axis J1.

  As described above, in the substrate processing apparatus 1 a, the first holding unit 2 a includes the suction unit 74 that sucks the outer edge portion of the substrate 9 that contacts the inner peripheral surface 24 of the through hole 21. This prevents the processing liquid stored in the storage space 20 (in the above example, the plating liquid) from leaking downward from between the outer edge of the substrate 9 and the inner peripheral surface 24 of the through hole 21. Can be suppressed. The suction portion 74 preferably sucks the outer edge portion of the substrate 9 over substantially the entire circumference. Thereby, it is possible to further prevent or suppress the processing liquid stored in the storage space 20 from leaking downward from between the outer edge portion of the substrate 9 and the inner peripheral surface 24 of the through hole 21. Even when the outer edge portion of the substrate 9 is not substantially adsorbed by the suction portion 74, a gap between the outer edge portion of the substrate 9 and the inner peripheral surface 24 of the through hole 21 is caused by suction by the suction portion 74. Since it can be made small, the leakage of the treatment liquid can be prevented or suppressed.

  FIG. 11 is a longitudinal sectional view showing another preferred substrate processing apparatus 1b. In the substrate processing apparatus 1b, the upper liquid receiver 5b replaces the first upper liquid receiver 51 shown in FIG. 1 with the outer side in the radial direction of the first holding part 2 and the radial direction of the second upper liquid receiver 52. A first upper liquid receiving portion 51b is provided on the inner side. The first upper liquid receiver 51b is a substantially cylindrical member centered on the central axis J1. The first upper liquid receiver 51b is spaced radially outward from the first holding part 2 and is spaced radially inward from the second upper liquid receiver 52.

  The upper end portion of the first upper liquid receiving portion 51 b is located above the upper end portion of the first holding portion 2. The first upper liquid receiving portion 51b includes a substantially cylindrical side wall portion centering on the central axis J1, and a canopy portion extending radially inward from the upper end portion of the side wall portion. The canopy portion may be an inclined portion that goes upward as it goes radially inward. The inner peripheral surface 511b of the first upper liquid receiving portion 51b is, for example, a substantially cylindrical shape centered on the central axis J1. The upper end portion of the second upper liquid receiving portion 52 is located above the upper end portion of the first upper liquid receiving portion 51b. In the example shown in FIG. 11, the first upper liquid receiver 51b and the second upper liquid receiver 52 are fixed to the housing 11 and do not move in the vertical direction.

  In the substrate processing apparatus 1b, for example, in step S20 (see FIG. 3) described above, the substrate 9 rotates at a position facing the first upper liquid receiver 51b in the radial direction. The plating solution supplied to the rotating substrate 9 is received by the first upper liquid receiving part 51 b and discharged to the outside of the housing 11 through the internal liquid discharge part 54. For example, the plating solution discharged via the inner drainage portion 54 joins with the plating solution discharged via the lower drainage portion 62 and is collected or discarded. In the substrate processing apparatus 1b, the second rinse liquid supplied to the rotating substrate 9 in step S21 is also received by the first upper liquid receiver 51b.

  In the substrate processing apparatus 1b, the radial distance between the substrate 9 and the first upper liquid receiver 51b is larger than the radial distance between the substrate 9 and the first upper liquid receiver 51 shown in FIG. Since it is large, it is possible to reduce the possibility that the processing liquid (that is, the plating liquid or the second rinsing liquid) splashed from the substrate 9 rebounds from the first upper liquid receiving portion 51b and adheres to the substrate 9. Therefore, in steps S20 and S21, the rotation speed of the substrate 9 can be increased and the processing efficiency of the substrate 9 can be improved.

  In the substrate processing apparatus 1b, as shown by a two-dot chain line in FIG. 11, the upper liquid receiver moving mechanism that moves the first upper liquid receiver 51b and the second upper liquid receiver 52 independently in the vertical direction. 55 may be provided. In steps S13 and S14, when the catalyst solution and the first rinsing liquid scattered from the rotating substrate 9 are received by the second upper liquid receiving part 52, the first upper liquid receiving part 51b is lowered and the first upper liquid receiving part 52 is lowered. The canopy part of the liquid part 51 b comes into contact with the upper end part of the first holding part 2. Thereby, the catalyst solution and the first rinse liquid are prevented or suppressed from entering the first upper liquid receiver 51b. In steps S20 and S21, when the first upper liquid receiving part 51b receives the plating solution and the second rinsing liquid scattered from the rotating substrate 9, the second upper liquid receiving part 52 is lowered and the second upper liquid receiving part 52 is lowered. The canopy part of the upper liquid receiving part 52 contacts the upper surface of the canopy part of the first upper liquid receiving part 51b. Thereby, it is prevented or suppressed that a plating solution and a 2nd rinse liquid enter into the 2nd upper liquid receiving part 52. FIG.

  Next, a substrate processing apparatus 1c according to a second embodiment of the present invention will be described. In the substrate processing apparatus 1c shown in FIG. 12, a lower liquid receiving portion 6c having a different structure from the lower liquid receiving portion 6 is provided instead of the lower liquid receiving portion 6 shown in FIG. Further, the second upper liquid receiving part 52 is omitted from the upper liquid receiving part 5. Further, in the substrate processing apparatus 1c, as in the substrate processing apparatus 1a shown in FIG. 10, the gas injection unit 73 is omitted, and the suction unit 74 is provided in the first holding unit 2c. The suction part 74 sucks and preferably sucks the outer edge part of the lower surface 92 of the substrate 9. On the inner peripheral surface 24 of the through hole 21 of the first holding part 2c, a discharge port 42 for discharging the processing liquid is provided. A cleaning unit 71c is provided on the lower surface of the first holding unit 2c to supply the cleaning liquid to the lower liquid receiving unit 6c to clean the lower liquid receiving unit 6c. The suction unit 74, the cleaning unit 71c, and the discharge port 42 are provided over substantially the entire circumference in the circumferential direction. The suction part 74, the cleaning part 71c, and the discharge port 42 are, for example, a substantially annular shape centered on the central axis J1. The other structure of the substrate processing apparatus 1c is substantially the same as the substrate processing apparatus 1 shown in FIG. In the following description, the same reference numerals are given to the configurations of the substrate processing apparatus 1c corresponding to the respective configurations of the substrate processing apparatus 1.

  The lower liquid receiving part 6c of the substrate processing apparatus 1c includes a first lower liquid receiving part 64, a second lower liquid receiving part 65, and a lower liquid receiving part moving mechanism 66. The 1st lower liquid receiving part 64 and the 2nd lower liquid receiving part 65 are arrange | positioned rather than the through-hole 21 of the 1st holding | maintenance part 2c. Each of the first lower liquid receiver 64 and the second lower liquid receiver 65 is a substantially cylindrical member centered on the central axis J1. The second lower liquid receiver 65 is disposed radially inward of the first lower liquid receiver 64. The inner peripheral surface of the first lower liquid receiver 64 and the outer peripheral surface of the second lower liquid receiver 65 are close to each other. The lower liquid receiver moving mechanism 66 moves the first lower liquid receiver 64 in the vertical direction.

  The inner edge portion 642 of the first lower liquid receiving portion 64 is located radially inward from the inner peripheral edge of the lower end portion of the first holding portion 2c, and is adjacent to the inner peripheral edge of the lower end portion of the first holding portion 2c in the radial direction. . Sites other than the inner edge portion 642 of the first lower liquid receiving portion 64 are located vertically below the step portion 25 of the first holding portion 2c. In the state shown in FIG. 12, the upper surface of the inner edge portion 642 of the first lower liquid receiving portion 64 is located at substantially the same vertical position as the lower edge of the inner peripheral surface 24 of the first holding portion 2c. The outer periphery of the upper end of the inner edge 642 of the first lower liquid receiver 64 is liquid-tightly sealed with the lower edge of the inner peripheral surface 24 of the first holding part 2c. The first lower liquid receiving portion 64 has a first pocket 641 that is a concave portion that is recessed downward from the upper surface. The first pocket 641 is located vertically below the step portion 25. In the state shown in FIG. 12, the upper opening 643 that is the upper end of the first pocket 641 is closed by the first holding portion 2c.

  In the state shown in FIG. 12, the upper surface of the second lower liquid receiver 65 is located at substantially the same vertical position as the upper surface of the inner edge 642 of the first lower liquid receiver 64. The inner peripheral edge at the upper end of the inner edge 642 of the first lower liquid receiver 64 is sealed in a liquid-tight manner with the second lower liquid receiver 65. The second lower liquid receiving portion 65 has a second pocket 651 that is a concave portion recessed downward from the upper surface.

  Next, an example of the processing flow of the substrate 9 by the substrate processing apparatus 1c will be described with reference to FIGS. 13A and 13B. 14 to 20 are longitudinal sectional views showing the substrate processing apparatus 1c during the processing of the substrate 9. As shown in FIG. When the substrate 9 is processed by the substrate processing apparatus 1c, first, as shown in FIG. 14, the substrate 9 is held in a horizontal state by the second holding unit 31 (step S31). The substrate 9 held by the second holding unit 31 is positioned above the first holding unit 2c and faces the first upper liquid receiving unit 51 of the upper liquid receiving unit 5 in the radial direction.

  Subsequently, the rotation of the substrate 9 and the second holding unit 31 by the rotation mechanism 33 is started (step S32). Then, the catalyst solution is supplied from the processing liquid supply unit 4 to the upper surface 91 of the rotating substrate 9 (step S33). In step S <b> 33, for example, a liquid columnar catalyst solution is discharged from the nozzle 41 toward the center of the substrate 9. The catalyst solution supplied to the central portion of the substrate 9 moves from the central portion of the substrate 9 toward the outer edge portion by centrifugal force, and is applied over the entire upper surface 91 of the substrate 9. The catalyst solution that has reached the outer edge of the substrate 9 scatters to the surroundings due to centrifugal force and is received by the first upper liquid receiver 51.

  The catalyst solution received by the first upper liquid receiving part 51 flows downward along the inner peripheral surface 511 of the first upper liquid receiving part 51 and the inner peripheral surface 24 of the first holding part 2c, and the upper opening 643 is formed. The second pocket of the second lower liquid receiving part 65 passes through the upper side of the first lower liquid receiving part 64 in the closed state (specifically, the upper side of the inner edge part 642 of the first lower liquid receiving part 64). Flows into 651. The processing liquid received by the second pocket 651 of the second lower liquid receiving part 65 is discharged to the outside of the housing 11 through the second lower liquid discharging part 68. The discharged catalyst solution may be recovered and reused, for example, or discarded. By supplying the catalyst solution to the substrate 9 (that is, applying the catalyst) for a predetermined time, the catalyst (for example, palladium) is adsorbed on the upper surface 91 of the substrate 9.

  When the supply of the catalyst solution is stopped and the catalyst application process is completed, the rotation of the substrate 9 and the second holding unit 31 by the rotation mechanism 33 is stopped (step S34). Next, the second holding portion 31 is moved downward by the holding portion moving mechanism 32, and the outer edge portion of the substrate 9 contacts the inner peripheral surface 24 of the first holding portion 2c. The second holding portion 31 further moves downward and is spaced downward from the lower surface 92 of the substrate 9 as shown in FIG. Thereby, the board | substrate 9 is delivered from the 2nd holding | maintenance part 31 to the 1st holding | maintenance part 2c, and is hold | maintained in a horizontal state by the 1st holding | maintenance part 2c below the upper end of the through-hole 21 (step S35). . When the substrate 9 is held by the first holding portion 2c, the outer edge portion of the lower surface 92 of the substrate 9 is sucked and sucked by the suction portion 74.

  Subsequently, the first rinse liquid is discharged from the discharge port 42 of the processing liquid supply unit 4 provided in the first holding unit 2c illustrated in FIG. The discharge port 42 is positioned above the upper surface 91 of the substrate 9 held by the first holding unit 2c. The first rinse liquid discharged from the discharge port 42 flows downward along the inner peripheral surface 24 of the through hole 21 of the first holding portion 2c, and is supplied from the radially outer side onto the upper surface 91 of the substrate 9. The first rinse liquid is, for example, pure water.

  The first rinse liquid supplied to the outer edge portion of the substrate 9 spreads inward in the radial direction, and the upper surface 91 of the substrate 9 is entirely covered with the first rinse liquid. In other words, the first rinsing liquid is stored in the storage space 20 surrounded by the upper surface 91 of the substrate 9 held by the first holding portion 2 c and the inner peripheral surface 24 of the through hole 21. In the substrate processing apparatus 1c, as described above, since the outer edge portion of the lower surface 92 of the substrate 9 held by the first holding unit 2c is sucked by the suction unit 74, the substrate 9 is temporarily deformed such as warpage. Even if it is, it is prevented or suppressed that the 1st rinse liquid leaks out from between the board | substrate 9 and the 1st holding | maintenance part 2c.

  When the upper surface 91 of the substrate 9 is covered with the first rinse liquid, the liquid film of the first rinse liquid on the upper surface 91 of the substrate 9 (that is, stored in the storage space 20) from the nozzle 41 of the processing liquid supply unit 4. Supply of the first rinse liquid is started with respect to the first rinse liquid (step S36). In step S <b> 36, for example, a liquid columnar first rinsing liquid is discharged from the nozzle 41 toward the center of the substrate 9. For example, the discharge flow rate of the first rinse liquid from the nozzle 41 is larger than the discharge flow rate of the first rinse liquid from the discharge port 42. Since the upper surface 91 of the substrate 9 is covered with the first rinse liquid in step S36, the first rinse liquid from the nozzle 41 does not directly collide with the upper surface 91 of the substrate 9, and the first rinse liquid on the substrate 9 is not affected. It is supplied indirectly through a liquid film of 1 rinse liquid. When the first rinse liquid is supplied from the nozzle 41, the supply of the first rinse liquid from the discharge port 42 may be continued or stopped.

  As shown in FIG. 15, when the first rinse liquid is stored up to a predetermined depth in the storage space 20, the supply of the first rinse liquid from the processing liquid supply unit 4 is stopped. The first rinse liquid stored in the storage space 20 is in contact with the inner peripheral surface 24 of the through hole 21. The depth of the first rinse liquid stored in the storage space 20 (that is, the vertical distance between the liquid surface of the first rinse liquid and the upper surface 91 of the substrate 9) is substantially uniform over the entire surface of the substrate 9. It is. The depth of the first rinse liquid in the storage space 20 is such that the liquid film of the first rinse liquid that can be held on the upper surface 91 of the substrate 9 by surface tension in the substrate 9 in a state where the outer edge portion is not in contact with another member. (Hereinafter referred to as “liquid film due to surface tension”). Specifically, the depth of the first rinse liquid in the storage space 20 is larger than the thickness of the liquid film due to the surface tension at the outer edge portion of the substrate 9, and the thickness of the liquid film due to the surface tension at the center portion of the substrate 9. Bigger than that.

  The upper surface 91 of the substrate 9 is covered with the first rinse liquid stored in the storage space 20 for a predetermined time, whereby the first rinse process is completed. Then, the second holding unit 31 is moved upward by the holding unit moving mechanism 32 to suck and hold the lower surface 92 of the substrate 9. Further, the suction of the substrate 9 by the suction part 74 is released. And the 2nd holding | maintenance part 31 moves further upwards, and as shown in FIG. 16, the board | substrate 9 spaces apart from the 1st holding | maintenance part 2c upwards. Thereby, the board | substrate 9 is delivered from the 1st holding | maintenance part 2c to the 2nd holding | maintenance part 31, and is hold | maintained in a horizontal state by the 2nd holding | maintenance part 31 (step S37).

  The first rinse liquid stored in the storage space 20 flows downward toward the lower liquid receiving portion 6c from the gap between the outer edge portion of the substrate 9 and the inner peripheral surface 24 of the first holding portion 2c. The first rinsing liquid flows radially inward over the first lower liquid receiving part 64 in a state where the upper opening 643 is closed by the first holding part 2c, and the second lower liquid receiving part 65 has a second It flows into the pocket 651. The processing liquid received by the second pocket 651 of the second lower liquid receiving part 65 is discharged to the outside of the housing 11 through the second lower liquid discharging part 68. Thereby, the catalyst solution on the substrate 9 is removed together with the first rinse liquid. The first rinse liquid received by the second lower liquid receiver 65 is preferably discarded via a route different from the catalyst solution discharge route in step S33. Thereby, the recovery efficiency of the catalyst solution can be improved.

  When the first rinse liquid flows downward from above the substrate 9, the second holding portion 31 is moved downward by the holding portion moving mechanism 32, and the substrate 9 is moved from the second holding portion 31 as shown in FIG. 17. It is delivered to the first holding unit 2c and held in a horizontal state (step S38). Then, the outer edge portion of the lower surface 92 of the substrate 9 is sucked and sucked by the suction portion 74. Further, the first lower liquid receiving portion 64 is moved downward by the lower liquid receiving portion moving mechanism 66, and between the lower end portion of the first holding portion 2c and the second lower liquid receiving portion 65 (that is, the first liquid receiving portion 65). A gap is formed (above the inner edge 642 of the lower liquid receiving portion 64). In the state shown in FIG. 17, the upper opening 643 of the first lower liquid receiver 64 is opened to be spaced downward from the first holding part 2c.

  In the substrate processing apparatus 1c, between step S37 and step S38, the substrate 9 is raised to the position shown in FIG. 14, and the substrate 9 is rotated for a predetermined time, thereby remaining on the substrate 9. One rinse solution may be removed. In this case, the first rinse liquid scattered from the substrate 9 to the surroundings is received by the first upper liquid receiving portion 51, and the inner peripheral surface 511 of the first upper liquid receiving portion 51 and the inner peripheral surface 24 of the first holding portion 2c. , Flows downward, is received by the second lower liquid receiver 65, and is discharged to the outside of the housing 11.

  As shown in FIG. 17, when the substrate 9 is held by the first holding unit 2c in step S39, the plating solution is supplied from the processing solution supply unit 4 to the upper surface 91 of the substrate 9 (step S39). In step S39, for example, a liquid columnar plating solution is discharged from the nozzle 41 toward the center of the substrate 9. The plating solution supplied to the central portion of the substrate 9 spreads outward in the radial direction, and the upper surface 91 of the substrate 9 is covered with the plating solution over the entire surface. The plating solution may be supplied onto the substrate 9 from the discharge port 42 of the processing solution supply unit 4.

  The plating solution supplied from the processing solution supply unit 4 is stored in the storage space 20 as shown in FIG. When the plating solution is stored to a predetermined depth in the storage space 20, the supply of the plating solution from the processing solution supply unit 4 is stopped. The plating solution stored in the storage space 20 is in contact with the inner peripheral surface 24 of the through hole 21. The depth of the plating solution stored in the storage space 20 is substantially uniform over the entire surface of the substrate 9. The depth of the plating solution in the storage space 20 is the same as the above, but the plating solution that can be held on the upper surface 91 of the substrate 9 by surface tension in the substrate 9 in which the outer edge portion is not in contact with other members. It is larger than the thickness of the film (that is, the liquid film due to surface tension).

  By covering the upper surface 91 of the substrate 9 with the plating solution stored in the storage space 20 for a predetermined time, the metal contained in the plating solution is formed on the upper surface 91 of the substrate 9 (specifically, on the upper surface 91). The metal layer is formed on the substrate 9. In the substrate processing apparatus 1 c, the substrate 9 is heated by the heating unit 72 while the upper surface 91 of the substrate 9 is covered with the plating solution stored in the storage space 20. Thereby, deposition of the metal on the upper surface 91 of the substrate 9 is promoted.

  Subsequently, the second holding unit 31 is moved upward by the holding unit moving mechanism 32 to suck and hold the lower surface 92 of the substrate 9. Further, the suction of the substrate 9 by the suction part 74 is released. And the 2nd holding | maintenance part 31 moves further upwards, and as shown in FIG. 19, the board | substrate 9 spaces apart from the 1st holding | maintenance part 2c upwards. Thereby, the board | substrate 9 is delivered from the 1st holding | maintenance part 2c to the 2nd holding | maintenance part 31, and is hold | maintained in a horizontal state by the 2nd holding | maintenance part 31 (step S40).

  The plating solution stored in the storage space 20 flows downward toward the lower liquid receiving portion 6c from the gap between the outer edge portion of the substrate 9 and the inner peripheral surface 24 of the first holding portion 2c. The plating solution flows downward through the gap between the lower end portion of the first holding portion 2 c and the second lower liquid receiving portion 65 and flows into the first pocket 641 of the first lower liquid receiving portion 64. . The plating solution received by the first lower liquid receiving portion 64 is discharged to the outside of the housing 11 through the first lower liquid discharging portion 67.

  Then, as shown in FIG. 20, when the substrate 9 is disposed at the same vertical position as the first upper liquid receiving portion 51, the rotation of the substrate 9 and the second holding portion 31 is started by the rotation mechanism 33. (Step S41). The rotation speed of the substrate 9 in step S41 is, for example, 300 rpm to 1000 rpm. The plating solution discharged from the nozzle 41 toward the central portion of the substrate 9 spreads radially outward on the upper surface 91 of the substrate 9 by centrifugal force, and is supplied to the entire surface of the upper surface 91 of the substrate 9. Thereby, the plating process with respect to the upper surface 91 of the board | substrate 9 advances (step S42).

  In the substrate processing apparatus 1c, the supply of the plating solution from the nozzle 41 onto the substrate 9 may be continued during steps S40 and S41. Further, while the plating process of the substrate 9 is being performed in step S42, the substrate 9 may be heated by the heating unit 72 (see FIG. 18), and the plating process may be promoted, as in the plating process in step S39. .

  The plating solution that has reached the outer edge portion of the substrate 9 scatters around due to centrifugal force and is received by the first upper liquid receiving portion 51 that faces the substrate 9 in the radial direction. The plating solution received by the first upper liquid receiving portion 51 flows downward along the inner peripheral surface 511 of the first upper liquid receiving portion 51 and the inner peripheral surface 24 of the first holding portion 2c, and the first lower receiving portion 51 The liquid 64 flows into the first pocket 641. The plating solution received by the first lower liquid receiving portion 64 is discharged to the outside of the housing 11 through the first lower liquid discharging portion 67. The discharged plating solution may be collected and reused, for example, or discarded. A metal is plated on the upper surface 91 of the substrate 9 by supplying a plating solution to the substrate 9 (that is, a plating process) for a predetermined time.

  When the supply of the plating solution is stopped and the plating process is completed, the second rinse solution is supplied from the nozzle 41 to the upper surface 91 of the rotating substrate 9 (step S43). The second rinse liquid is, for example, pure water. In step S <b> 43, for example, a liquid columnar second rinse liquid is discharged from the nozzle 41 toward the center of the substrate 9. In this case, the physical force applied to the substrate 9 by the first rinse liquid when the first rinse liquid is supplied in step S36 (for example, the physical force applied to the substrate 9 by the collision of the first rinse liquid) is The physical force applied to the substrate 9 by the second rinse liquid when the second rinse liquid is supplied in S43 is smaller.

  The second rinse liquid supplied onto the upper surface 91 of the substrate 9 spreads outward in the radial direction by centrifugal force, whereby the plating solution is removed from the substrate 9. The second rinse liquid scattered from the substrate 9 to the surroundings is received by the first upper liquid receiving part 51, and passes through the inner peripheral surface 511 of the first upper liquid receiving part 51 and the inner peripheral surface 24 of the first holding part 2c. Into the first pocket 641 of the first lower liquid receiver 64. The second rinse liquid received by the first lower liquid receiving part 64 is discharged to the outside of the housing 11 through the first lower liquid discharge part 67. The second rinse liquid received by the first lower liquid receiver 64 is preferably discarded via a path different from the plating liquid discharge path in step S42. Thereby, the collection efficiency of the plating solution can be improved. When the supply of the second rinse liquid to the substrate 9 (that is, the second rinse process) is performed for a predetermined time, the supply of the second rinse liquid is stopped.

  Thereafter, the rotation speed of the substrate 9 by the rotation mechanism 33 increases. Thereby, the 2nd rinse liquid on the board | substrate 9 moves to radial direction outward, and is scattered from the outer edge part of the board | substrate 9 to radial direction outward. By continuing the rotation of the substrate 9 for a predetermined time, a drying process for removing the liquid such as the second rinse liquid from the substrate 9 is performed (step S44). When the drying process of the substrate 9 is completed, the rotation of the substrate 9 and the second holding unit 31 by the rotation mechanism 33 is stopped, and the process for the substrate 9 is completed (step S45). In the substrate processing apparatus 1c, the above-described steps S31 to S45 are sequentially performed on the plurality of substrates 9, and the plurality of substrates 9 are sequentially processed.

  In the substrate processing apparatus 1c, for example, when the processing of a predetermined number of substrates 9 is completed, the apparatus is cleaned. In the cleaning process, for example, the cleaning liquid is discharged from the cleaning unit 71c provided on the lower surface of the first holding unit 2c toward the first lower liquid receiving unit 64, and the first lower liquid receiving unit 64 is cleaned. As a result, the processing solution such as the plating solution and the second rinsing solution adhering to the first lower liquid receiving part 64 is removed. Further, even when a part of the catalyst is peeled off from the substrate 9 and flows into the first lower liquid receiving part 64 during the plating process of the substrate 9, the catalyst is also removed by the above-described cleaning process. It is removed from the liquid part 64.

  As described above, the substrate processing apparatus 1c is similar to the above-described substrate processing apparatus 1 in that the first holding unit 2c, the second holding unit 31, the holding unit moving mechanism 32, the processing liquid supply unit 4, and the like. And a lower liquid receiving part 6c. A through hole 21 is provided in the first holding part 2c. The through hole 21 has an upper opening 22 through which the substrate 9 can pass. A diameter of a part of the inner peripheral surface 24 of the through hole 21 is smaller than that of the substrate 9. The 1st holding | maintenance part 2c makes the inner peripheral surface 24 of the through-hole 21 contact the outer edge part of the board | substrate 9 from the downward direction, and hold | maintains the board | substrate 9 in a horizontal state. The second holding part 31 is located below the through hole 21. The holding part moving mechanism 32 moves the second holding part 31 upward through the through-hole 21 to bring the second holding part 31 into contact with the lower surface 92 of the substrate 9 and from the first holding part 2c to the second holding part. The substrate 9 is transferred to the unit 31. The processing liquid supply unit 4 supplies a processing liquid onto the upper surface 91 of the substrate 9. The lower liquid receiving portion 6 c is located below the through hole 21.

  The processing liquid supplied from the processing liquid supply unit 4 is surrounded by the upper surface 91 of the substrate 9 held by the first holding unit 2 c below the upper end of the through hole 21 and the inner peripheral surface 24 of the through hole 21. Stored in the storage space 20 to be stored. Thereby, it is possible to suppress the movement of the processing liquid on the upper surface 91 of the substrate 9 when the processing liquid is supplied onto the substrate 9 and the liquid processing is performed. As a result, the processing of the upper surface 91 of the substrate 9 with the processing liquid can be performed stably.

  In the substrate processing apparatus 1 c, the substrate 9 is transferred from the first holding unit 2 c to the second holding unit 31, so that the processing liquid in the storage space 20 flows from between the substrate 9 and the inner peripheral surface 24 of the through hole 21. It flows downward and is received by the lower liquid receiving part 6c. Thereby, the substrate processing apparatus 1c can be reduced in size in the radial direction as compared with the case where the cup portion is provided around the first holding portion to receive the processing liquid scattered from the substrate. In addition, when receiving the processing liquid in the cup part, the gap between the cup part and the first holding part is relatively small, so that it is difficult to clean the inner peripheral surface of the cup part. In contrast, in the substrate processing apparatus 1c described above, the gap between the lower liquid receiving portion 6c and the first holding portion 2c (for example, the vertical direction between the lower surface of the first holding portion 2c and the first lower liquid receiving portion 64). ) Can be increased relatively easily. Therefore, the cleaning liquid can be supplied to a desired portion of the lower liquid receiving portion 6c, and the lower liquid receiving portion 6c can be suitably cleaned. In other words, in the substrate processing apparatus 1c, it is possible to suitably clean the processing liquid discharge path.

  The processing solution stored in the storage space 20 in the substrate processing apparatus 1c is, for example, a plating solution used for electroless plating processing of the substrate 9. In the substrate processing apparatus 1c, as described above, cleaning of the plating solution discharge path can be suitably performed. As a result, it is possible to prevent or suppress problems such as metal adhesion in the discharge route.

  In the substrate processing apparatus 1c, the lower liquid receiver 6c includes a first lower liquid receiver 64 and a second lower liquid receiver 65. The first lower liquid receiver 64 is disposed below the through hole 21. The first lower liquid receiver 64 receives the processing liquid flowing downward from between the substrate 9 and the inner peripheral surface 24 of the through hole 21. The second lower liquid receiver 65 is disposed on the radially inner side of the first lower liquid receiver 64 below the through hole 21. The second lower liquid receiving part 65 is a liquid that flows downward from between the substrate 9 and the inner peripheral surface 24 of the through-hole 21 in a state where the upper opening 643 of the first lower liquid receiving part 64 is closed. receive. Thereby, the processing liquid received by the lower liquid receiving part 6c can be separated and drained.

  In the substrate processing apparatus 1c, the catalyst solution and the first rinsing liquid are received by the first lower liquid receiving part 64 of the lower liquid receiving part 6c, and the plating liquid and the second rinsing liquid are second below the lower liquid receiving part 6c. It may be received by the liquid receiver 65.

  FIG. 21 is a longitudinal sectional view showing another preferred substrate processing apparatus 1d. In the substrate processing apparatus 1d, instead of the first holding unit 2c and the lower liquid receiving unit 6c shown in FIG. 12, the first holding unit 2d and the lower liquid receiving unit having different structures from the first holding unit 2c and the lower liquid receiving unit 6c are used. A portion 6d is provided. The upper liquid receiver 5d includes a first upper liquid receiver 51b and a second upper liquid receiver 52 shown in FIG. The other structure of the substrate processing apparatus 1d is substantially the same as the substrate processing apparatus 1c shown in FIG. In the following description, the same symbol is given to the configuration of the substrate processing apparatus 1d corresponding to each configuration of the substrate processing apparatus 1c. The processing flow of the substrate 9 in the substrate processing apparatus 1d is substantially the same as the processing flow of the substrate 9 in the substrate processing apparatus 1c (steps S31 to S45).

  In the first holding portion 2d, the inner peripheral surface 24 of the through hole 21 includes an annular placement surface 27 that is substantially perpendicular to the central axis J1. A suction part 74 is provided on the mounting surface 27. In the first holding portion 2d, the outer edge portion of the lower surface 92 of the substrate 9 placed on the placement surface 27 is sucked by the suction portion 74 and preferably sucked. In the first holding portion 2d, the inner peripheral surface 24 of the through hole 21 is directed radially inward from the inner peripheral edge of the placement surface 27 toward the lower side. The first holding portion 2 d includes an inclined lower surface 28 that goes downward from the lower end edge of the inner peripheral surface 24 of the through hole 21 toward the outer side in the radial direction. The inclined lower surface 28 is located vertically below the placement surface 27.

  The lower liquid receiving part 6d includes a first lower liquid receiving part 64d, a second lower liquid receiving part 65d, and a lower liquid receiving part moving mechanism 66d substantially similar to the lower liquid receiving part 6c shown in FIG. The first lower liquid receiving part 64d and the second lower liquid receiving part 65d are disposed below the through hole 21 of the first holding part 2d. The first lower liquid receiver 64d is a substantially cylindrical portion centered on the central axis J1. The first lower liquid receiver 64d is, for example, a member connected to the first holder 2d. The second lower liquid receiver 65d is a substantially cylindrical member centered on the central axis J1. The second lower liquid receiver 65d is disposed radially inward of the first lower liquid receiver 64d. In the example shown in FIG. 21, the inner edge of the first lower liquid receiver 64d and the outer edge of the second lower liquid receiver 65d overlap in the radial direction, and the inner peripheral surface of the first lower liquid receiver 64d is The second lower liquid receiving portion 65d is located radially inward from the outer peripheral surface. The lower liquid receiver moving mechanism 66d moves the second lower liquid receiver 65d in the vertical direction.

  The first lower liquid receiving portion 64d is located vertically below the placement surface 27 of the first holding portion 2d. The first lower liquid receiving portion 64d has a first pocket 641 that is a concave portion that is recessed downward from the upper surface. The second lower liquid receiving portion 65d has a second pocket 651 that is a concave portion that is recessed downward from the upper surface. The outer edge portion 652 of the second lower liquid receiving portion 65d is located radially outside the inner peripheral edge of the lower end portion of the first holding portion 2d, and overlaps the inner peripheral edge of the lower end portion of the first holding portion 2d in the vertical direction. In the state shown in FIG. 21, the outer edge portion 652 of the second lower liquid receiving portion 65d contacts the inclined lower surface 28 of the first holding portion 2d from below. As a result, the upper opening that is the upper end of the first pocket 641 of the first lower liquid receiver 64d is closed by the second lower liquid receiver 65d. The outer edge portion 652 of the second lower liquid receiving portion 65d and the inclined lower surface 28 of the first holding portion 2d are sealed in a liquid-tight manner.

  In the state shown in FIG. 21, when the processing liquid is supplied onto the upper surface 91 of the substrate 9, the processing liquid is stored in the storage space 20. Thereafter, as shown in FIG. 22, when the second holding unit 31 receives the substrate 9 from the first holding unit 2 d and raises it, the processing liquid stored in the storage space 20 is separated from the outer edge portion of the substrate 9 and the first edge. From the gap between the holding portion 2d and the inner peripheral surface 24, it flows downward toward the lower liquid receiving portion 6d. The treatment liquid flows into the second pocket 651 of the second lower liquid receiver 65d. The processing liquid received by the second pocket 651 is discharged to the outside of the housing 11 via the second lower drainage part 68. As described above, since the upper opening of the first lower liquid receiver 64d is closed, the processing liquid does not flow into the first pocket 641 of the first lower liquid receiver 64d.

  On the other hand, as shown in FIG. 23, when the second lower liquid receiving part 65d is lowered by the lower liquid receiving part moving mechanism 66d, the outer edge part 652 of the second lower liquid receiving part 65d is the inclined lower surface of the first holding part 2d. 28 is spaced downward. An upper opening 643 of the first pocket 641 of the first lower liquid receiving part 64d is formed between the outer edge part 652 of the second lower liquid receiving part 65d and the inclined lower surface 28 of the first holding part 2d. In this state, the processing liquid stored in the storage space 20 passes downward from the gap between the outer edge portion of the substrate 9 and the inner peripheral surface 24 of the first holding portion 2d toward the lower liquid receiving portion 6d. When flowing, the processing liquid flows into the first pocket 641 of the first lower liquid receiving part 64d through the upper opening 643. The processing liquid received by the first pocket 641 is discharged to the outside of the housing 11 through the first lower drainage part 67. Since the upper surface of the outer edge portion 652 of the second lower liquid receiving portion 65d is an inclined surface that goes downward as it goes radially outward, the processing liquid flows into the first pocket 641 along the inclined surface. , Does not flow into the second pocket 651.

  In the substrate processing apparatus 1d shown in FIG. 21, for example, the catalyst solution supplied onto the substrate 9 is received by the second upper liquid receiver 52 of the upper liquid receiver 5d, and the first rinse liquid is the first upper liquid receiver. Received by portion 51b. The plating solution supplied onto the substrate 9 is received by the first lower liquid receiving portion 64d of the lower liquid receiving portion 6d, and the second rinse liquid is received by the second lower liquid receiving portion 65d. As described above, the collection efficiency of the treatment liquid (for example, the catalyst solution and the plating solution) can be improved by changing the structure that is received for each treatment liquid with different treatments for the substrate 9. Note that the structure for receiving each processing solution in the substrate processing apparatus 1d may be changed as appropriate.

  Various changes can be made in the substrate processing in the above-described substrate processing apparatuses 1 and 1a to 1d and the substrate processing apparatuses 1 and 1a to 1d.

  For example, the catalyst contained in the catalyst solution used in the substrate processing apparatuses 1 and 1a to 1d is not limited to palladium, and various catalysts other than palladium may be contained in the catalyst solution. Moreover, the metal contained in a plating solution is not limited to the above-mentioned heavy metal, and various metals may be contained in the plating solution. The first rinse liquid and the second rinse liquid are not limited to pure water, and may be other types of rinse liquids.

  In the substrate processing apparatuses 1, 1 a to 1 d, a nozzle moving mechanism for moving the nozzle 41 substantially horizontally above the substrate 9 is provided, and while the processing liquid is supplied from the nozzle 41 to the substrate 9, the central portion of the substrate 9 is provided. The reciprocating movement of the nozzle 41 may be repeated between the upper part and the outer edge part.

  In the substrate processing apparatus 1a shown in FIG. 10, in the substrate 9 held by the first holding unit 2a, not only the outer edge portion of the lower surface 92 is sucked by the suction unit 74 but also by the gas injection unit 73 (see FIG. 1). Gas may be injected from below toward the outer edge. Thereby, it is possible to further prevent or suppress the processing liquid stored in the storage space 20 from leaking downward from between the substrate 9 and the first holding unit 2a. Similarly, in the substrate processing apparatuses 1 and 1b to 1d, both the gas injection unit 73 and the suction unit 74 may be provided.

  In the substrate processing apparatus 1, the first holding unit 2 is not necessarily fixed to the housing 11. For example, the first holding unit 2 may be movable in the vertical direction or the horizontal direction with respect to the housing 11. The same applies to the substrate processing apparatuses 1a to 1d.

  In the substrate processing apparatus 1, the rotating mechanism 33 that rotates the second holding unit 31 and the upper liquid receiving unit 5 that receives the processing liquid scattered from the rotating substrate 9 may be omitted. The same applies to the substrate processing apparatuses 1a to 1d. In the substrate processing apparatuses 1 and 1a to 1d, the heating unit 72 that heats the substrate 9 may be omitted.

  In the trap unit 45, a filter that collects incoming heavy metal may be provided between the second flow path 455 and the recovery flow path 83 of the trap tank 451. In the trap unit 45, a plurality of trap tanks 451 may be arranged in series between the lower drainage unit 62 and the recovery flow path 83. Thereby, it is possible to further prevent or suppress the ingress heavy metal from entering the recovery channel 83.

  Alternatively, in the trap unit 45, a filter for collecting the catalyst may be provided between the lower drainage unit 62 and the recovery channel 83 instead of the trap tank 451. In this case, in order to prevent clogging of the filter, it is necessary to replace or clean the filter relatively frequently. On the other hand, in the above-described substrate processing apparatus 1 provided with the trap tank 451, the maintenance frequency of the structure for collecting the entering heavy metal can be reduced as compared with the case where the filter is provided.

  For example, in step S36 described above, after the first rinse liquid is supplied along the inner peripheral surface 24 from the discharge port 42 provided in the inner peripheral surface 24 of the first holding unit 2c of the substrate processing apparatus 1c, the storage space is stored. The first rinse liquid is supplied from the nozzle 41 toward the first rinse liquid stored in 20, but the method of supplying the first rinse liquid may be variously changed. For example, the supply of the first rinse liquid from the nozzle 41 may be omitted, and the first rinse liquid may be supplied only from the discharge port 42. Alternatively, the discharge port 42 is not provided in the first holding part 2c, and the first rinse liquid is discharged from the nozzle 41 toward the inner peripheral surface 24 of the first holding part 2c, so that the first rinse liquid is It may be supplied along the surface 24. Alternatively, as in step S <b> 14, a mist-like first rinse liquid may be supplied from the nozzle 41 to the substrate 9. Furthermore, the first rinse liquid need not necessarily be stored in the storage space 20.

  In the processing of the substrate 9 in steps S11 to S23, the processing liquid is supplied to the substrate 9 between step S11 and step S13, and preprocessing (that is, processing performed before the catalyst application processing) is performed. May be. Similarly, in the processing of the substrate 9 in steps S31 to S45, preprocessing for the substrate 9 may be performed between step S31 and step S33. In step S33, the catalyst solution may be stored in the storage space 20 and the catalyst applying process may be performed on the substrate 9.

  In the above-described example, the processing of steps S31 to S45 for the substrate 9 is continuously performed in one substrate processing apparatus 1c. For example, two substrate processing apparatuses 1 (see FIG. 1) are used for the processing. May be performed. Specifically, in the first substrate processing apparatus 1, after supplying the catalyst solution to the substrate 9 and performing the catalyst application process, the first rinse liquid is stored in the storage space 20 and the first rinse process is performed. Is called. When the first rinsing process is completed, the substrate 9 is carried into the second substrate processing apparatus 1, the plating solution is stored in the storage space 20, the plating process is performed, and then the second rinsing solution is supplied to the substrate 9. Then, the second rinsing process is performed. As described above, by processing the substrate 9 using the two substrate processing apparatuses 1, the discharge destination of the first rinse liquid stored in the storage space 20 and the discharge destination of the plating solution are disposed below the substrate 9. And the device structure can be simplified.

  In the substrate processing apparatus 1, various processing liquids other than the above processing liquids (the catalyst solution, the first rinsing liquid, the plating liquid, and the second rinsing liquid) are supplied to the substrate 9, and various processes are performed on the substrate 9. May be. For example, the cleaning liquid may be stored in the storage space 20 in a state where the substrate 9 is held by the first holding unit 2 and the substrate 9 may be cleaned. When the cleaning process is performed, bubbling cleaning may be performed by vibrating the cleaning liquid stored in the storage space 20. Alternatively, in a state where the substrate 9 is held by the first holding unit 2, after supplying nitrogen gas to the storage space 20, the processing liquid that has been subjected to deoxygenation processing is stored in the storage space 20, thereby reducing the oxygen content. The substrate 9 may be processed in the state. The same applies to the substrate processing apparatuses 1a to 1d.

  The substrate processing apparatuses 1 and 1a to 1d may be used for processing glass substrates used for display devices such as liquid crystal display devices, plasma displays, and FED (field emission display) in addition to semiconductor substrates. Alternatively, the substrate processing apparatuses 1, 1a to 1d may be used for processing of an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, a photomask substrate, a ceramic substrate, a solar cell substrate, and the like.

  The configurations in the above-described embodiments and modifications may be combined as appropriate as long as they do not contradict each other.

DESCRIPTION OF SYMBOLS 1,1a-1d Substrate processing apparatus 2,2a, 2c, 2d 1st holding | maintenance part 4 Processing liquid supply part 5,5a, 5d Upper liquid receiving part 6,6c, 6d Lower liquid receiving part 9 Substrate 11 Housing 20 Storage space 21 Through hole 22 Upper opening (of first holding part) 24 Inner peripheral surface 31 (of through hole) 31 Second holding part 32 Holding part moving mechanism 33 Rotating mechanism 51, 51b First upper liquid receiving part 52 Second upper liquid receiving part 64, 64d First lower liquid receiving part 65, 65d Second lower liquid receiving part 71, 71c Washing part 72 Heating part 73 Gas injection part 74 Suction part 91 (Substrate) upper surface 92 (Substrate) lower surface 643 (First lower part) Upper opening (of liquid receiving part) J1 central axis S11-S23, S31-S45 Step

Claims (7)

A substrate processing apparatus for processing a substrate,
A through hole having an upper opening through which the substrate can pass and a diameter of a part of the inner peripheral surface being smaller than that of the substrate is provided, and the inner peripheral surface of the through hole is brought into contact with the outer edge portion of the substrate from below. A first holding unit for holding the substrate in a horizontal state;
A second holding part located below the through hole;
By moving the second holding portion upward through the through hole, the second holding portion is brought into contact with the lower surface of the substrate, and the substrate is transferred from the first holding portion to the second holding portion. Holding part moving mechanism for performing,
A treatment liquid supply unit for supplying a treatment liquid onto the upper surface of the substrate;
A lower liquid receiving portion located below the through hole;
With
The processing liquid supplied from the processing liquid supply unit is surrounded by the upper surface of the substrate held by the first holding unit below the upper end of the through hole and the inner peripheral surface of the through hole. Stored in the storage space,
When the substrate is transferred from the first holding unit to the second holding unit, the processing liquid in the storage space flows downward from between the substrate and the inner peripheral surface of the through-hole and moves down the bottom. A substrate processing apparatus which is received by a liquid receiving unit. The substrate processing apparatus according to claim 1,
A substrate processing apparatus, further comprising a cleaning section that cleans the lower liquid receiving section. The substrate processing apparatus according to claim 1, wherein:
A rotation mechanism that rotates the second holding portion above the upper end of the through hole;
An upper liquid receiving part for receiving a processing liquid scattered around from the substrate rotating together with the second holding part;
A substrate processing apparatus further comprising: The substrate processing apparatus according to claim 3, wherein
The substrate processing apparatus, wherein the upper liquid receiving portion includes a first upper liquid receiving portion that protrudes upward from the first holding portion continuously to the first holding portion. The substrate processing apparatus according to claim 4,
The substrate processing apparatus, wherein the upper liquid receiving part further includes a second upper liquid receiving part that receives a processing liquid scattered from the substrate on a radially outer side and above the first upper liquid receiving part. A substrate processing apparatus according to any one of claims 1 to 5,
The lower liquid receiving part is
A first lower liquid receiving portion that is disposed below the through hole and receives a processing liquid flowing downward from between the substrate and the inner peripheral surface of the through hole;
The substrate and the through-hole are disposed in a state radially inward of the first lower liquid receiving part below the through hole and the upper opening of the first lower liquid receiving part is closed. A second lower liquid receiving portion for receiving a processing liquid flowing downward from between the inner peripheral surface,
A substrate processing apparatus comprising: A substrate processing apparatus according to any one of claims 1 to 6,
The substrate processing apparatus, wherein the processing solution stored in the storage space is a plating solution used for electroless plating of the substrate.

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