WO2019029324A1 - 激光退火设备和激光退火方法 - Google Patents

激光退火设备和激光退火方法 Download PDF

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Publication number
WO2019029324A1
WO2019029324A1 PCT/CN2018/095760 CN2018095760W WO2019029324A1 WO 2019029324 A1 WO2019029324 A1 WO 2019029324A1 CN 2018095760 W CN2018095760 W CN 2018095760W WO 2019029324 A1 WO2019029324 A1 WO 2019029324A1
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Prior art keywords
linear
laser
light
spot
laser annealing
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English (en)
French (fr)
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吕祖彬
张宇
谢璞
谢银
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation

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  • the present disclosure relates to the field of display technologies, and in particular, to a laser annealing apparatus and a laser annealing method.
  • Laser annealing equipment usually includes a linear laser (ie, a laser that emits a spot on the illuminated surface as a linear spot) and a light cutter for limiting the spot length of the linear laser (English: beam Cutter).
  • a linear laser ie, a laser that emits a spot on the illuminated surface as a linear spot
  • a light cutter for limiting the spot length of the linear laser (English: beam Cutter).
  • beam Cutter Currently, laser annealing equipment is widely used in the process of forming polysilicon.
  • An aspect of the present disclosure provides a laser annealing apparatus including a linear laser and a light cutter disposed in a light outgoing direction of the linear laser.
  • the light ray cutter includes a plate-shaped body that is opaque, and the plate-shaped body is provided with a light-transmitting region defined by at least two sides. Two of the at least two sides of the light-transmitting region are gradually approached in a predetermined direction, and a length direction of the linear spot of the linear laser on the preset illumination surface is not parallel to the preset direction .
  • the light transmissive region is a recessed region disposed at an edge of the plate-like body.
  • the light transmissive region is a hollowed out region disposed in the plate-like body.
  • the two sides are each arcuate.
  • the two sides are tangent and the tangent is perpendicular to the length direction of the linear spot.
  • the two sides are each in a quarter arc shape.
  • the two sides are straight edges.
  • the two sides are connected, and the angle bisector of the angle formed by the two sides is perpendicular to the longitudinal direction of the linear spot.
  • the laser annealing apparatus described above further includes a moving component.
  • the moving assembly is configured to relatively move the linear laser and the ray cutter in the predetermined direction.
  • the moving component is configured to be coupled to the light cutter to move the light cutter.
  • the method includes: starting the linear laser, wherein a linear laser has a predetermined angle between a length direction of a linear spot on a target layer to be laser annealed and a preset side of the target layer, The angle of the preset angle is greater than 0 degrees and less than 90 degrees; moving the target layer relative to the linear laser to change the position of the linear spot of the linear laser on the target layer; The target layer moves relative to the linear laser, and the linear spot is adjusted by relatively moving the ray cutter and the linear laser in a direction opposite to the preset direction or the preset direction. length.
  • the adjusting the length of the linear spot comprises making the length of the linear spot the same as a target length, the target length being a straight line determined by the linear spot at the target The length of the line segment in the area where the layer is located.
  • the target layer is disposed on a submount, and the moving the target layer relative to the laser to change a linear spot of the linear laser on the target layer
  • the position includes moving the abutment to change a position of the linear spot of the linear laser on the target layer.
  • the laser annealing apparatus further includes a moving assembly configured to be coupled to the light cutter, the moving assembly configured to move the light cutter.
  • a moving assembly configured to be coupled to the light cutter, the moving assembly configured to move the light cutter.
  • adjusting the ray cutter and the linear laser by moving relative to the predetermined direction or the opposite direction of the predetermined direction Determining the length of the linear spot, comprising: adjusting, by the moving component, moving the light cutter in a direction opposite to the predetermined direction or the predetermined direction in response to relative movement of the target layer and the laser The length of the linear spot.
  • a direction in which the target layer moves relative to the linear laser is perpendicular to the preset direction.
  • the material of the abutment comprises aluminum.
  • the target layer is a rectangular amorphous silicon layer.
  • the laser annealing method described above further includes scanning the linear spot through the entire target layer.
  • FIG. 1 is a schematic view of a scanning area of a linear spot in the related art
  • 2-1 is a schematic structural diagram of a laser annealing apparatus according to an embodiment of the present disclosure
  • FIG. 2-2 is a schematic structural view of a laser cutter in the laser annealing apparatus shown in FIG. 2-1;
  • FIG. 2-3 is a schematic structural view of another laser cutter in the laser annealing apparatus shown in FIG. 2-1;
  • FIG. 2-4 is a schematic structural view of another laser cutter in the laser annealing apparatus shown in FIG. 2-1;
  • FIG. 2-5 is a schematic structural view of another laser cutter in the laser annealing apparatus shown in FIG. 2-1;
  • FIG. 2-6 is a schematic structural view of another laser cutter in the laser annealing apparatus shown in FIG. 2-1;
  • FIGS. 2-7 are schematic structural diagrams of another laser annealing apparatus according to an embodiment of the present disclosure.
  • Figure 2-8 is a plan view of the light cutter in the laser annealing apparatus shown in Figures 2-7;
  • FIG. 3 is a flow chart of a laser annealing method according to an embodiment of the present disclosure
  • 4-1 is a flowchart of another laser annealing method provided by an embodiment of the present disclosure.
  • FIG. 4-2 is a schematic view showing a linear spot irradiated on an amorphous silicon layer in the embodiment shown in FIG. 4-1;
  • FIG. 4-3 is a schematic view showing another linear spot irradiated on the amorphous silicon layer in the embodiment shown in FIG. 4-1;
  • FIG. 4-4 is a schematic view showing another linear spot irradiated on the amorphous silicon layer in the embodiment shown in FIG. 4-1.
  • a rectangular amorphous silicon layer is usually formed in a predetermined region of the base, and then a light cutter is disposed between the amorphous silicon layer and the linear laser.
  • the light cutter is provided with a strip-shaped hollow area, and the length of the strip-shaped hollow area is smaller than the length of the linear light spot of the linear laser.
  • the formed polysilicon layer may have a cloud pattern (English: mura, mura refers to a phenomenon of uneven brightness), and the defect is formed by use.
  • the organic light-emitting diode of the polysilicon layer (English: Organic Light-Emitting Diode; OLED for short) is particularly serious. Therefore, when the amorphous silicon layer is scanned by the linear spot, the linear spot and the side of the amorphous silicon layer are usually formed. Sharp angle. As shown in FIG. 1, an amorphous silicon layer A is formed on the base 11, and a scanning area of the amorphous silicon layer A is scanned by a linear spot which is not parallel to any one side of the amorphous silicon layer A.
  • the inventors of the present disclosure have found that at least the following problems exist in the above related art: in order to avoid damage to the base by laser irradiation onto the base, it is difficult for the scanning area of the linear spot on the amorphous silicon layer to completely cover the amorphous silicon. The layer, which in turn causes a portion of the amorphous silicon layer to not be converted into a polysilicon layer, thereby affecting the ratio of conversion of the amorphous silicon layer to the polysilicon layer.
  • the laser annealing device provided by various embodiments of the present disclosure may be an excimer laser annealing (ELA) device capable of emitting an excimer laser.
  • ELA excimer laser annealing
  • the laser annealing apparatus 20 includes a linear laser 21 and a light cutter 22 that is disposed in the light outgoing direction d1 of the linear laser 21.
  • the linear direction of the linear spot 21A of the linear laser 21 on the predetermined irradiation surface 30 is d3.
  • L is a laser beam emitted from the linear laser 21.
  • the predetermined illumination surface 30 may be an amorphous silicon layer.
  • Figure 2-2 is a top plan view of a ray cutter 22 that can be used in the laser annealing apparatus of Figure 2-1.
  • the light cutter 22 includes a plate-like body 221 that is opaque, and the plate-shaped body 221 is provided with a light-transmitting region 222 defined by at least two sides. The two sides a and b of the light transmitting region 222 are gradually approached in the predetermined direction d2.
  • the linear direction d3 of the linear spot 21A on the preset irradiation surface 30 of the linear laser shown in FIG. 2-1 is not parallel to the preset direction d2.
  • transparent specifically refers to the ability to transmit laser light emitted by a linear laser.
  • opaque means in particular that the laser light emitted by the linear laser cannot be transmitted.
  • the light transmissive region 222 may specifically be a recessed region provided at the edge of the plate-like body 221, as shown in Figure 2-2.
  • the light transmitting region 222 may be a hollowed out region provided in the plate-like body 221.
  • the length of the linear spot is limited and adjusted by two edges of the light cutter that are close to each other in a predetermined direction.
  • the linear spot 21A moves up and down in the orientation shown in FIG. 2-2, so that the linear shape of the linear laser can be adjusted.
  • the length of the spot 21A when the amorphous silicon layer is irradiated, the entire amorphous silicon layer can be converted into a polycrystalline silicon layer by appropriately adjusting the length of the linear spot, thereby solving the problem that some amorphous silicon layers are not converted into polysilicon layers in the related art.
  • the problem of affecting the conversion ratio of the amorphous silicon layer to the polysilicon layer that is, the embodiment of the present disclosure achieves an effect of increasing the conversion ratio of the amorphous silicon layer to the polysilicon layer.
  • FIG. 2-3 are schematic structural views of another ray cutter that can be used in the laser annealing apparatus provided in the embodiment shown in Fig. 2-1. As shown in FIG. 2-3, both sides a and b of the light-transmitting region 222 on the plate-like body 221 are arc-shaped.
  • the two sides a and b may be tangent, and the tangent c is perpendicular to the length direction d3 of the linear spot 21A.
  • the two sides a and b may each be in the shape of a quarter arc.
  • the structure of the light cutter in the laser annealing apparatus provided in the embodiment shown in FIG. 2-1 can be used.
  • the two sides a and b intersect but are not tangent.
  • the light cutter and the linear laser are relatively moved in the opposite direction of the preset direction d2 or the preset direction d2
  • not only the length of the linear spot 21A but also the position of the center point of the linear spot 21A can be changed.
  • FIG. 2-2 For the meanings of other labels in FIG. 2-4, reference may be made to FIG. 2-2, and details are not described herein again.
  • the structure of the light cutter 20 in the laser annealing apparatus provided in the embodiment shown in FIG. 2-1 can be used. It can also be as shown in Figure 2-5 that the two sides a and b intersect and together form a larger arc.
  • FIG. 2-2 For the meanings of other labels in FIG. 2-5, reference may be made to FIG. 2-2, and details are not described herein again.
  • FIG. 2-6 are schematic structural views of another ray cutter that can be used in the laser annealing apparatus provided in the embodiment shown in Fig. 2-1.
  • the two sides a and b of the light-transmitting region 222 on the plate-shaped body 221 are straight sides.
  • FIG. 2-2 For the meanings of other marks in FIG. 2-6, reference may be made to FIG. 2-2, and details are not described herein again.
  • the two sides a and b intersect, and the angle bisector f of the angle formed by the two sides is perpendicular to the longitudinal direction d3 of the linear spot 21A.
  • the laser annealing apparatus 20 further includes a moving assembly 23 configured to relatively move the linear laser 21 and the light cutter 22 in the opposite direction of the preset direction d2 or the preset direction d2.
  • the moving assembly 23 is configured to be coupled to the light cutter 22 to move the light cutter 22. Since the linear laser 21 is generally difficult to move, it is easier to move the linear laser 21 and the light cutter 22 in the opposite directions of the predetermined direction d2 or the preset direction d2 by moving the light cutter 22.
  • FIGS. 2-8 are top views of the light cutter 22 and the moving assembly 23 in the laser annealing apparatus shown in Figs. 2-7.
  • the moving assembly 23 is configured to be coupled to the light cutter 22 to move the light cutter 22 in the opposite direction of the predetermined direction d2 or the preset direction d2.
  • Figure 2-2 For the meanings of other tags in Figure 2-8, refer to Figure 2-2, and details are not described here.
  • the light transmissive region of the ray cutter may also include more edges, and is not limited to including only two sides a and b.
  • the linear laser and the light cutter are moved in the opposite direction of the preset direction or the preset direction, the position of the linear laser irradiated on the light cutter is changed. Thereby improving the heat dissipation performance and life of the light cutter. Further, after the heat dissipation performance of the light cutter is improved, the influence of the light cutter on the laser light emitted by the linear laser is reduced, thereby improving the stability of the spot irradiated on the preset illumination surface.
  • the length of the linear spot is limited and adjusted by two edges of the light cutter that are adjacent in a predetermined direction.
  • the linear spot 21A moves up and down in the orientation shown in FIG. 2-2, so that the linear shape of the linear laser can be adjusted.
  • the length of the spot 21A when the amorphous silicon layer is irradiated, the entire amorphous silicon layer can be converted into a polycrystalline silicon layer by appropriately adjusting the length of the linear spot, thereby solving the problem that some amorphous silicon layers are not converted into polysilicon layers in the related art.
  • the problem of affecting the conversion ratio of the amorphous silicon layer to the polysilicon layer that is, the embodiment of the present disclosure achieves an effect of increasing the conversion ratio of the amorphous silicon layer to the polysilicon layer.
  • the laser annealing method uses any of the above laser annealing apparatuses, and can be used for laser annealing of a target layer (for example, a rectangular amorphous silicon layer) located on a substrate, for example.
  • a target layer for example, a rectangular amorphous silicon layer
  • a linear laser is activated, wherein a linear laser has a predetermined angle between a longitudinal direction of the linear spot on the target layer to be laser annealed and a preset edge of the target layer, and is preset.
  • the angle of the included angle is greater than 0 degrees and less than 90 degrees.
  • the target layer is moved relative to the linear laser to change the position of the linear spot of the linear laser on the target layer.
  • the length of the linear spot is adjusted by relatively moving the ray cutter and the linear laser in a predetermined direction in response to the relative movement of the target layer and the linear laser.
  • adjusting the length of the linear spot includes making the length of the linear spot the same as the target length, the target length being the length of the line segment in the region where the target layer is located by the line determined by the linear spot.
  • the length of the linear spot is limited and adjusted by two edges of the light cutter that are close to each other in a predetermined direction.
  • the linear spot moves up and down in the orientation shown in FIG. 2-2, thereby adjusting the linear spot of the linear laser. length.
  • the amorphous silicon layer is irradiated, the entire amorphous silicon layer can be converted into a polycrystalline silicon layer by appropriately adjusting the length of the linear spot, thereby solving the problem that some amorphous silicon layers are not converted into polysilicon layers in the related art.
  • the problem of affecting the conversion ratio of the amorphous silicon layer to the polysilicon layer that is, the embodiment of the present disclosure achieves an effect of increasing the conversion ratio of the amorphous silicon layer to the polysilicon layer.
  • the laser annealing method uses any of the above laser annealing apparatuses, and can be used for laser annealing of a target layer (for example, a rectangular amorphous silicon layer) located on a substrate, for example.
  • a target layer for example, a rectangular amorphous silicon layer
  • a linear laser is activated, wherein the linear laser has a predetermined angle between the longitudinal direction of the linear spot on the target layer to be laser annealed and the preset side of the target layer.
  • the angle of the preset angle is greater than 0 degrees and less than 90 degrees.
  • the preset angle may be 1 degree or 3 degrees or the like. Having the length direction of the linear spot at a predetermined angle with the preset side of the rectangular amorphous silicon layer can prevent the polysilicon layer formed by laser annealing from generating defects such as mura.
  • FIG. 4-2 is a schematic view of the linear spot 21A irradiated on the amorphous silicon layer 40.
  • the length direction d3 of the linear spot 21A is at a predetermined angle with the preset edge u of the rectangular amorphous silicon layer 40 on the base 50. .
  • Figure 4-2 refers to Figure 2-8, and details are not described herein.
  • the base station is moved to change the position of the linear spot of the linear laser on the target layer.
  • the length of the linear spot is adjusted by moving the component to move the ray cutter in a predetermined direction.
  • the direction in which the rectangular amorphous silicon layer moves relative to the laser is perpendicular to the preset direction.
  • the target length s is the length of the straight line determined by the linear spot 21A in the region where the rectangular amorphous silicon layer 40 is located.
  • the base 50 may be rectangular and the base 50 may be moved in directions (d4 and d5) parallel to the two sides of the base 50.
  • the light cutter 221 can be moved in the preset direction d2 by the moving assembly 23. When the light cutter 221 and the base 50 are moved, the length of the linear spot 21A is always the target length s.
  • the material of the abutment 50 includes aluminum to reduce static electricity and tiny particles adhering to the base 50.
  • the target length s is a variable whose length depends on the position of the linear spot. For example, as shown in FIG. 4-4, when the linear spot 21A is located at one corner of the rectangular amorphous silicon layer 40, the target length s can be very small. For the meanings of other marks in Figure 4-4, refer to Figure 4-3, and details are not described herein.
  • the linear spot is scanned through the entire target layer.
  • the linear spot can be moved while the length of the linear spot is always the target length, so that the linear spot scans the entire amorphous silicon layer, thereby making the entire rectangular amorphous silicon layer Transformed into a polysilicon layer.
  • the utilization ratio of the base can be more than 95% (the utilization of the base is the ratio of the area of the polysilicon layer formed on the base to the area of the base.
  • the utilization of the abutment is not 100% because the edge of the abutment needs to leave a certain area, and the utilization rate of the abutment in the related art is only about 81%.
  • the length of the linear spot is limited and adjusted by two edges of the light cutter that are adjacent in a predetermined direction.
  • the linear spot moves up and down in the orientation shown in FIG. 2-2, thereby adjusting the linear spot of the linear laser. length.
  • the amorphous silicon layer is irradiated, the entire amorphous silicon layer can be converted into a polycrystalline silicon layer by appropriately adjusting the length of the linear spot, thereby solving the problem that some amorphous silicon layers are not converted into polysilicon layers in the related art.
  • the problem of affecting the conversion ratio of the amorphous silicon layer to the polysilicon layer that is, the embodiment of the present disclosure achieves an effect of increasing the conversion ratio of the amorphous silicon layer to the polysilicon layer.
  • the disclosed apparatus and method may be implemented in other manners.
  • the device embodiments described above are merely illustrative.
  • the division of the components is only a logical function division.
  • there may be another division manner for example, multiple components or components may be combined or Can be integrated into another system, or some features can be ignored or not executed.
  • the mutual coupling or direct coupling or communication connection shown or discussed may be an indirect coupling or communication connection through some interface, device or component, and may be in an electrical, mechanical or other form.
  • the components described as separate components may or may not be physically separate, and the components displayed as components may or may not be physical components, that is, may be located in one place, or may be distributed to multiple network components. Some or all of the components may be selected according to actual needs to achieve the objectives of the solution of the embodiment.
  • a person skilled in the art may understand that all or part of the steps of implementing the above embodiments may be completed by hardware, or may be instructed by a program to execute related hardware, and the program may be stored in a computer readable storage medium.
  • the storage medium mentioned may be a read only memory, a magnetic disk or an optical disk or the like.

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Abstract

本公开提供了一种激光退火设备和激光退火方法。该激光退火设备包括：线状激光器和设置在所述线状激光器的出光方向上的光线切割器。光线切割器包括不透光的板状本体。板状本体中设置有由至少两条边限定出的透光区域。透光区域的所述至少两条边中的两条边沿预设方向逐渐靠近，并且。线状激光器在预设照射面上的线状光斑的长度方向与该预设方向不平行。

Description

激光退火设备和激光退火方法
相关申请
本申请要求享有2017年8月10日提交的中国专利申请No.201710680256.5的优先权，其全部公开内容通过引用并入本文。
技术领域
本公开涉及显示技术领域，特别涉及一种激光退火设备和激光退火方法。
背景技术
激光退火(英文：laser annealing)设备通常包括线状激光器(即发出的激光在照射面上的光斑为线状光斑的激光器)和用于限制线状激光器的光斑长度的光线切割器(英文：beam cutter)。目前，激光退火设备广泛应用于形成多晶硅的流程中。
发明内容
本公开的一方面提供了一种激光退火设备，包括线状激光器和设置在所述线状激光器的出光方向上的光线切割器。所述光线切割器包括不透光的板状本体，所述板状本体中设置有由至少两条边限定出的透光区域。所述透光区域的所述至少两条边中的两条边沿预设方向逐渐靠近，并且所述线状激光器在预设照射面上的线状光斑的长度方向与所述预设方向不平行。
根据本公开的一些实施例，所述透光区域是设置在所述板状本体边缘处的凹口区域。
根据本公开的一些实施例，所述透光区域是设置在所述板状本体中的镂空区域。
根据本公开的一些实施例，所述两条边均呈圆弧状。
根据本公开的一些实施例，所述两条边相切，且切线与所述线状光斑的长度方向垂直。
根据本公开的一些实施例，所述两条边均呈四分之一圆弧状。
根据本公开的一些实施例，所述两条边均为直线边。
根据本公开的一些实施例，所述两条边相连，且所述两条边构成的夹角的角平分线与所述线状光斑的长度方向垂直。
根据本公开的一些实施例，上述激光退火设备还包括移动组件。 所述移动组件配置成使所述线状激光器和所述光线切割器沿所述预设方向相对移动。
根据本公开的一些实施例，所述移动组件配置成与所述光线切割器连接，以便移动所述光线切割器。
本公开的另一方面提供了一种激光退火方法，使用上述任一种激光退火设备。所述方法包括：启动所述线状激光器，其中，所述线状激光器在待激光退火的目标层上的线状光斑的长度方向与所述目标层的预设边成预设夹角，所述预设夹角的角度大于0度且小于90度；使所述目标层与所述线状激光器相对移动以改变所述线状激光器的线状光斑在所述目标层上的位置；响应于所述目标层与所述线状激光器相对移动，通过使所述光线切割器和所述线状激光器沿所述预设方向或所述预设方向的反方向相对移动来调节所述线状光斑的长度。
根据本公开的一些实施例，所述调节所述线状光斑的长度包括使所述线状光斑的长度与目标长度相同，所述目标长度为所述线状光斑所确定的直线在所述目标层所在区域中的线段长度。
根据本公开的一些实施例，所述目标层设置在基台上，并且所述使所述目标层与所述激光器相对移动以改变所述线状激光器的线状光斑在所述目标层上的位置，包括：移动所述基台以改变所述线状激光器的线状光斑在所述目标层上的位置。
根据本公开的一些实施例，所述激光退火设备还包括配置成与所述光线切割器连接的移动组件，所述移动组件配置成移动所述光线切割器。所述响应于所述目标层与所述线状激光器相对移动，通过使所述光线切割器和所述线状激光器沿所述预设方向或所述预设方向的反方向相对移动来调节所述线状光斑的长度，包括：响应于所述目标层与所述激光器相对移动，通过所述移动组件沿所述预设方向或所述预设方向的反方向移动所述光线切割器来调节所述线状光斑的长度。
根据本公开的一些实施例，所述目标层与所述线状激光器相对移动的方向与所述预设方向垂直。
根据本公开的一些实施例，所述基台的材料包括铝。
根据本公开的一些实施例，所述目标层为矩形非晶硅层。
根据本公开的一些实施例，上述激光退火方法还包括使线状光斑扫描通过整个目标层。
附图说明
为了更清楚地说明本公开实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是相关技术中线状光斑的扫描区域的示意图；
图2-1是本公开实施例提供的一种激光退火设备的结构示意图；
图2-2是图2-1所示激光退火设备中的一种激光切割器的结构示意图；
图2-3是图2-1所示激光退火设备中的另一种激光切割器的结构示意图；
图2-4是图2-1所示激光退火设备中的另一种激光切割器的结构示意图；
图2-5是图2-1所示激光退火设备中的另一种激光切割器的结构示意图；
图2-6是图2-1所示激光退火设备中的另一种激光切割器的结构示意图；
图2-7是本公开实施例提供的另一种激光退火设备的结构示意图；
图2-8是图2-7所示的激光退火设备中光线切割器的俯视图；
图3是本公开实施例提供的一种激光退火方法的流程图；
图4-1是本公开实施例提供的另一种激光退火方法的流程图；
图4-2是图4-1所示实施例中一种线状光斑照射在非晶硅层上的示意图；
图4-3是图4-1所示实施例中另一种线状光斑照射在非晶硅层上的示意图；
图4-4是图4-1所示实施例中另一种线状光斑照射在非晶硅层上的示意图。
通过上述附图，已示出本公开的示例性实施例，后文中将有更详细的描述。这些附图和文字描述并不是为了通过任何方式限制本公开构思的范围，而是通过参考特定实施例为本领域技术人员说明本公开的概念。
具体实施方式
为使本公开的目的、技术方案和优点更加清楚，下面将结合附图对本公开实施方式作进一步地详细描述。
相关技术在形成多晶硅时，通常在基台的预设区域形成矩形的非晶硅层，然后在非晶硅层和线状激光器之间设置光线切割器。光线切割器上设置有条状镂空区域，条状镂空区域的长度小于线状激光器的线状光斑的长度。当线状激光器射出的激光照射到光线切割器上的条状镂空区域时，部分激光能够透过条状镂空区域并在非晶硅上形成被光线切割器截取的线状光斑。随后移动基台，使该线状光斑扫描整个非晶硅层，从而完成对非晶硅层的激光退火，使非晶硅层转变为多晶硅层。
由于在线状光斑平行于非晶硅层的任意一条边时，形成的多晶硅层会发生云纹(英文：mura，mura是指一种亮度不均匀的现象)等不良，该不良在使用所形成的多晶硅层的有机发光二极管(英文：Organic Light-Emitting Diode；简称：OLED)中尤其严重，因而在使用线状光斑扫描非晶硅层时，通常使得线状光斑与非晶硅层的一条边构成锐角。如图1所示，基台11上形成有非晶硅层A，通过与非晶硅层A的任意一条边不平行的线状光斑扫描该非晶硅层A的扫描区域为q。
然而，本公开的发明人发现，在上述相关技术中至少存在以下问题：为了避免激光照射到基台上而损伤基台，线状光斑在非晶硅层上的扫描区域难以完全覆盖非晶硅层，进而导致部分非晶硅层未转变为多晶硅层，从而影响非晶硅层向多晶硅层的转变比例。
有鉴于此，本公开各个实施例提供了改进的激光退火设备，该设备可以用于对各种材料进行激光退火。可选的，本公开各个实施例所提供的激光退火设备可以是能够发射准分子激光的准分子激光退火(英文：Excimer Laser Annealing；简称：ELA)设备。
图2-1是本公开实施例所提供的一种激光退火设备的结构示意图。该激光退火设备20包括线状激光器21和设置在线状激光器21的出光方向d1上的光线切割器22。线状激光器21在预设照射面30上的线状光斑21A的长度方向为d3。L为线状激光器21射出的激光。特别地，预设照射面30可以为非晶硅层。
图2-2为可以使用在图2-1所示激光退火设备中的光线切割器22的俯视图。如图2-2所示，光线切割器22包括不透光的板状本体221， 板状本体221上设置有由至少两条边限定出的透光区域222。透光区域222的两条边a和b沿预设方向d2逐渐靠近。图2-1所示的线状激光器在预设照射面30上的线状光斑21A的长度方向d3与预设方向d2不平行。
如本文所使用的，“透光”特别地是指能够使线状激光器所发射的激光透过。相应地，“不透光”特别地是指不能够使线状激光器所发射的激光透过。
透光区域222可以特别地为设置在板状本体221边缘处的凹口区域，如图2-2所示。可替换地，透光区域222可以是设置在板状本体221中的镂空区域。
在本公开实施例提供的上述激光退火设备中，通过光线切割器的两条沿预设方向靠近的边来限制和调节线状光斑的长度。在使光线切割器和线状激光器沿预设方向或预设方向的反方向相对移动时，线状光斑21A在图2-2所示的取向中上下移动，因此能够调节线状激光器的线状光斑21A的长度。相应地，在对非晶硅层进行照射时，通过适当地调节线状光斑的长度，能够使整个非晶硅层转变为多晶硅层，进而解决相关技术中部分非晶硅层未转变为多晶硅层而影响非晶硅层向多晶硅层的转变比例的问题。也就是说，本公开的实施例达到了提高非晶硅层向多晶硅层的转变比例的效果。
图2-3为可以使用在图2-1所示实施例提供的激光退火设备中的另一种光线切割器的结构示意图。如图2-3所示，板状本体221上的透光区域222的两条边a和b均呈圆弧状。
在示例性实施例中，两条边a和b可以相切，且切线c与线状光斑21A的长度方向d3垂直。此时，在使光线切割器和线状激光器沿预设方向d2或预设方向d2的反方向相对移动时，能够快速地改变线状光斑21A的长度。
在示例性实施例中，两条边a和b可以均呈四分之一圆弧状。
在示例性实施例中，在透光区域222的两条边a和b均呈圆弧状时，可以使用在图2-1所示实施例提供的激光退火设备中的光线切割器的结构还可以如图2-4所示，两条边a和b相交但不相切。如此，在使光线切割器和线状激光器沿预设方向d2或预设方向d2的反方向相对移动时，不但能够改变线状光斑21A的长度，还可以改变线状光斑21A 的中心点的位置。图2-4中的其他标记的含义可以参考图2-2，在此不再赘述。
在示例性实施例中，在透光区域222的两条边a和b均呈圆弧状时，可以使用在图2-1所示实施例提供的激光退火设备中的光线切割器20的结构还可以如图2-5所示，两条边a和b相交且共同构成一个更大的圆弧。图2-5中的其他标记的含义可以参考图2-2，在此不再赘述。
图2-6为可以使用在图2-1所示实施例提供的激光退火设备中的另一种光线切割器的结构示意图。如图2-6所示，板状本体221上的透光区域222的两条边a和b均为直线边。图2-6中其他标记的含义可以参考图2-2，在此不再赘述。
在示例性实施例中，两条边a和b相交，且两条边构成的夹角的角平分线f与线状光斑21A的长度方向d3垂直。
图2-7为本公开实施例提供的另一种激光退火设备的结构示意图。如图2-7所示，该激光退火设备20还包括移动组件23，移动组件23配置成使线状激光器21和光线切割器22沿预设方向d2或预设方向d2的反方向相对移动。
在示例性实施例中，移动组件23配置成与光线切割器22连接，以便移动光线切割器22。由于线状激光器21通常难以移动，因而通过移动光线切割器22来使线状激光器21和光线切割器22沿预设方向d2或预设方向d2的反方向相对移动较为容易。
图2-7中其他标记的含义可以参考图2-1，在此不再赘述。
图2-8为图2-7所示的激光退火设备中的光线切割器22和移动组件23的俯视图。如图2-8所示，移动组件23配置成与光线切割器22连接，以便使光线切割器22沿预设方向d2或预设方向d2的反方向移动。图2-8中其他标记的含义可以参考图2-2，在此不再赘述。
在其它示例性实施例中，光线切割器的透光区域还可以包括有更多条边，而不限于仅包括两条边a和b。
在本公开实施例提供的上述激光退火设备中，在使线状激光器和光线切割器沿预设方向或预设方向的反方向移动时，改变了线状激光器照射在光线切割器上的位置，从而提高了光线切割器的散热性能及寿命。进一步地，在光线切割器的散热性能提高后，减少了光线切割器对线状激光器发出的激光的影响，从而提高了照射在预设照射面上 的光斑的稳定性。
在本公开实施例提供的激光退火设备中，通过光线切割器的两条沿预设方向靠近的边来限制和调节线状光斑的长度。在使光线切割器和线状激光器沿预设方向或预设方向的反方向相对移动时，线状光斑21A在图2-2所示的取向中上下移动，因此能够调节线状激光器的线状光斑21A的长度。相应地，在对非晶硅层进行照射时，通过适当地调节线状光斑的长度，能够使整个非晶硅层转变为多晶硅层，进而解决相关技术中部分非晶硅层未转变为多晶硅层而影响非晶硅层向多晶硅层的转变比例的问题。也就是说，本公开的实施例达到了提高非晶硅层向多晶硅层的转变比例的效果。
图3是本公开实施例提供的一种激光退火方法的流程图。该激光退火方法使用上述任一种激光退火设备，并且可以用于对例如位于基台上的目标层(例如矩形非晶硅层)进行激光退火。
如图3所示，在步骤301处，启动线状激光器，其中线状激光器在待激光退火的目标层上的线状光斑的长度方向与目标层的预设边成预设夹角，预设夹角的角度大于0度且小于90度。
在步骤302处，使目标层与线状激光器相对移动以改变线状激光器的线状光斑在目标层上的位置。
在步骤303处，响应于目标层与线状激光器相对移动，通过使光线切割器和线状激光器沿预设方向相对移动来调节线状光斑的长度。
在示例性实施例中，调节线状光斑的长度包括使线状光斑的长度与目标长度相同，目标长度为线状光斑所确定的直线在目标层所在区域中的线段长度。
在本公开实施例提供的激光退火方法中，通过光线切割器的两条沿预设方向靠近的边来限制和调节线状光斑的长度。在使光线切割器和线状激光器沿预设方向或预设方向的反方向相对移动时，线状光斑在图2-2所示的取向中上下移动，因此能够调节线状激光器的线状光斑的长度。相应地，在对非晶硅层进行照射时，通过适当地调节线状光斑的长度，能够使整个非晶硅层转变为多晶硅层，进而解决相关技术中部分非晶硅层未转变为多晶硅层而影响非晶硅层向多晶硅层的转变比例的问题。也就是说，本公开的实施例达到了提高非晶硅层向多晶硅层的转变比例的效果。
图4-1是本公开实施例提供的另一种激光退火方法的流程图。该激光退火方法使用上述任一种激光退火设备，并且可以用于对例如位于基台上的目标层(例如矩形非晶硅层)进行激光退火。
如图4所示，在步骤401处，启动线状激光器，其中线状激光器在待激光退火的目标层上的线状光斑的长度方向与目标层的预设边成预设夹角。
预设夹角的角度大于0度且小于90度。在示例性实施例中，该预设夹角可以为1度或3度等。使线状光斑的长度方向与矩形非晶硅层的预设边成预设夹角能够避免激光退火形成的多晶硅层产生mura等不良。
图4-2为线状光斑21A照射在非晶硅层40上的示意图，线状光斑21A的长度方向d3与基台50上的矩形非晶硅层40的预设边u成预设夹角。图4-2中其它标记的含义可以参考图2-8，在此不再赘述。
在步骤402处，移动基台以改变线状激光器的线状光斑在目标层上的位置。
在步骤403处，响应于移动基台，通过移动组件沿预设方向移动光线切割器来调节线状光斑的长度。
可选地，在移动基台时，矩形非晶硅层与激光器相对移动的方向与预设方向垂直。
如图4-3所示，目标长度s为线状光斑21A所确定的直线在矩形非晶硅层40所在区域中的长度。
基台50可以为矩形，并且可以沿平行于基台50的两个边的方向(d4和d5)移动基台50。可以通过移动组件23在预设方向d2上移动光线切割器221。在移动光线切割器221和基台50时，使线状光斑21A的长度始终为目标长度s。基台50的材料包括铝，从而减少静电以及微小异物(particle)附着在基台50上。
图4-3中其它标记的含义可以参考图2-8，在此不再赘述。
需要说明的是，目标长度s为一个变量，其长度取决于线状光斑所在的位置。例如，如图4-4所示，在线状光斑21A位于矩形非晶硅层40的一个角落时，目标长度s可以非常小。图4-4中其它标记的含义可以参考图4-3，在此不再赘述。
在步骤404处，使线状光斑扫描通过整个目标层。
在相关技术中，由于线状光斑的长度固定，导致有部分非晶硅层无法转变为多晶硅层，这在大尺寸OLED面板的制造过程中尤为明显。而在本公开的实施例中，可以在使线状光斑的长度始终为目标长度的情况下，移动线状光斑，使线状光斑扫描整个非晶硅层，进而使整个矩形非晶硅层都转变为多晶硅层。
在本公开实施例提供的激光退火方法中，基台的利用率可达95％以上(基台利用率为基台上形成的多晶硅层的面积与基台面积的比率。在本公开实施例中，基台利用率没达到100％是因为基台的边沿要留出一定的区域)，而相关技术中的基台的利用率仅为81％左右。
在本公开实施例提供的激光退火设备中，通过光线切割器的两条沿预设方向靠近的边来限制和调节线状光斑的长度。在使光线切割器和线状激光器沿预设方向或预设方向的反方向相对移动时，线状光斑在图2-2所示的取向中上下移动，因此能够调节线状激光器的线状光斑的长度。相应地，在对非晶硅层进行照射时，通过适当地调节线状光斑的长度，能够使整个非晶硅层转变为多晶硅层，进而解决相关技术中部分非晶硅层未转变为多晶硅层而影响非晶硅层向多晶硅层的转变比例的问题。也就是说，本公开的实施例达到了提高非晶硅层向多晶硅层的转变比例的效果。
在本申请所提供的几个实施例中，应该理解到，所揭露的装置和方法，可以通过其它的方式实现。例如，以上所描述的装置实施例仅仅是示意性的，例如，所述组件的划分，仅仅为一种逻辑功能划分，实际实现时可以有另外的划分方式，例如多个组件或组件可以结合或者可以集成到另一个系统，或一些特征可以忽略，或不执行。另一点，所显示或讨论的相互之间的耦合或直接耦合或通信连接可以是通过一些接口，装置或组件的间接耦合或通信连接，可以是电性，机械或其它的形式。
所述作为分离部件说明的组件可以是或者也可以不是物理上分开的，作为组件显示的部件可以是或者也可以不是物理组件，即可以位于一个地方，或者也可以分布到多个网络组件上。可以根据实际的需要选择其中的部分或者全部组件来实现本实施例方案的目的。
本领域普通技术人员可以理解实现上述实施例的全部或部分步骤可以通过硬件来完成，也可以通过程序来指令相关的硬件完成，所述 的程序可以存储于一种计算机可读存储介质中，上述提到的存储介质可以是只读存储器，磁盘或光盘等。
以上所述仅为本公开的示例性实施例，并不用以限制本公开，凡在本公开的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本公开的保护范围之内。

Claims (18)

  1. 一种激光退火设备，包括：
    线状激光器和设置在所述线状激光器的出光方向上的光线切割器，
    其中，所述光线切割器包括不透光的板状本体，所述板状本体中设置有由至少两条边限定出的透光区域，所述透光区域的所述至少两条边中的两条边沿预设方向逐渐靠近，并且所述线状激光器在预设照射面上的线状光斑的长度方向与所述预设方向不平行。
  2. 根据权利要求1所述的激光退火设备，其中，所述透光区域是设置在所述板状本体边缘处的凹口区域。
  3. 根据权利要求1所述的激光退火设备，其中，所述透光区域是设置在所述板状本体中的镂空区域。
  4. 根据权利要求1所述的激光退火设备，其中，所述两条边均呈圆弧状。
  5. 根据权利要求4所述的激光退火设备，其中，所述两条边相切，且切线与所述线状光斑的长度方向垂直。
  6. 根据权利要求5所述的激光退火设备，其中，所述两条边均呈四分之一圆弧状。
  7. 根据权利要求1所述的激光退火设备，其中，所述两条边均为直线边。
  8. 根据权利要求6所述的激光退火设备，其中，所述两条边相连，且所述两条边构成的夹角的角平分线与所述线状光斑的长度方向垂直。
  9. 根据权利要求8所述的激光退火设备，还包括移动组件，所述移动组件配置成使所述线状激光器和所述光线切割器沿所述预设方向相对移动。
  10. 根据权利要求9所述的激光退火设备，其中，所述移动组件配置成与所述光线切割器连接，以便移动所述光线切割器。
  11. 一种激光退火方法，使用权利要求1-10任一所述的激光退火设备，所述方法包括：
    启动所述线状激光器，其中，所述线状激光器在待激光退火的目 标层上的线状光斑的长度方向与所述目标层的预设边成预设夹角，所述预设夹角的角度大于0度且小于90度；
    使所述目标层与所述线状激光器相对移动以改变所述线状激光器的线状光斑在所述目标层上的位置；
    响应于所述目标层与所述线状激光器相对移动，通过使所述光线切割器和所述线状激光器沿所述预设方向或所述预设方向的反方向相对移动来调节所述线状光斑的长度。
  12. 根据权利要求11所述的方法，其中，所述调节所述线状光斑的长度包括使所述线状光斑的长度与目标长度相同，所述目标长度为所述线状光斑所确定的直线在所述目标层所在区域中的线段长度。
  13. 根据权利要求11所述的方法，其中，所述目标层设置在基台上，并且所述使所述目标层与所述激光器相对移动以改变所述线状激光器的线状光斑在所述目标层上的位置，包括：
    移动所述基台以改变所述线状激光器的线状光斑在所述目标层上的位置。
  14. 根据权利要求11所述的方法，其中，所述激光退火设备还包括配置成与所述光线切割器连接的移动组件，所述移动组件配置成移动所述光线切割器，
    所述响应于所述目标层与所述线状激光器相对移动，通过使所述光线切割器和所述线状激光器沿所述预设方向或所述预设方向的反方向相对移动来调节所述线状光斑的长度，包括：
    响应于所述目标层与所述激光器相对移动，通过所述移动组件沿所述预设方向或所述预设方向的反方向移动所述光线切割器来调节所述线状光斑的长度。
  15. 根据权利要求11所述的方法，其中，所述目标层与所述线状激光器相对移动的方向与所述预设方向垂直。
  16. 根据权利要求13所述的方法，其中，所述基台的材料包括铝。
  17. 根据权利要求11至16任一所述的方法，其中，所述目标层为矩形非晶硅层。
  18. 根据权利要求11至17任一所述的方法，还包括使线状光斑扫描通过整个目标层。
PCT/CN2018/095760 2017-08-10 2018-07-16 激光退火设备和激光退火方法 Ceased WO2019029324A1 (zh)

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