WO2019012959A1 - セラミックスヒータ - Google Patents
セラミックスヒータ Download PDFInfo
- Publication number
- WO2019012959A1 WO2019012959A1 PCT/JP2018/023863 JP2018023863W WO2019012959A1 WO 2019012959 A1 WO2019012959 A1 WO 2019012959A1 JP 2018023863 W JP2018023863 W JP 2018023863W WO 2019012959 A1 WO2019012959 A1 WO 2019012959A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- insulator
- substrate mounting
- mounting table
- ceramic heater
- cylindrical support
- Prior art date
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 76
- 239000012212 insulator Substances 0.000 claims abstract description 54
- 238000010438 heat treatment Methods 0.000 claims description 21
- 238000005219 brazing Methods 0.000 claims description 4
- 238000003466 welding Methods 0.000 claims description 4
- 229910010293 ceramic material Inorganic materials 0.000 abstract 1
- 239000004020 conductor Substances 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 6
- 238000007689 inspection Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
- H05B3/06—Heater elements structurally combined with coupling elements or holders
- H05B3/08—Heater elements structurally combined with coupling elements or holders having electric connections specially adapted for high temperatures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
- H05B1/0227—Applications
- H05B1/023—Industrial applications
- H05B1/0233—Industrial applications for semiconductors manufacturing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/18—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being embedded in an insulating material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates
- H05B3/74—Non-metallic plates, e.g. vitroceramic, ceramic or glassceramic hobs, also including power or control circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
Definitions
- various thin film processes such as film formation processes represented by CVD and sputtering and etching processes are performed on a semiconductor substrate (semiconductor wafer) which is an object to be processed . Since these thin film processes are generally performed with the semiconductor substrate heated to a predetermined temperature, the semiconductor substrate placed on the mounting surface is placed in the vacuum chamber in which the process is performed.
- a ceramic heater also referred to as a susceptor that heats from the lower surface, is mounted.
- the ceramic heater according to the present disclosure includes a substrate mounting table made of a disk-shaped ceramic having a substrate mounting surface on the upper surface, and a plurality of the plurality of zones embedded in a plurality of zones of the substrate mounting table as viewed from the substrate mounting surface.
- the plurality of feeding portions are disposed inside the cylindrical support so as to extend from the plurality of electrode terminals toward the insulator, and are collected at the center of the insulator along the insulator to be a substrate of the insulator It extends from the surface opposite to the surface facing the mounting table.
- FIG. 1 is a longitudinal sectional view of an embodiment of a ceramic heater according to the present disclosure.
- FIG. 2 is a plan view showing a circuit pattern of a plurality of heating circuits which the ceramic heater of FIG. 1 has.
- FIG. 3A is a partial longitudinal cross-sectional view of a multi-electrode integrated structure portion included in the ceramic heater of FIG.
- FIG. 3B is a bottom view of the multi-electrode integrated structure of the ceramic heater of FIG.
- FIG. 4 is a longitudinal sectional view of a conventional ceramic heater.
- the substrate mounting surface is divided into a plurality of zones and a plurality of heat generating circuits are respectively embedded in the zones
- a plurality of electrode terminals connected to the ends of the plurality of heat generating circuits and their external power supply It is necessary to store a plurality of feed lines connecting the two in the narrow space inside the cylindrical support.
- the plurality of feeders may be complicated on the inner side of the cylindrical support, making the operation at the time of assembly and inspection complicated, possibly resulting in the wrong connection position or a short circuit.
- the present disclosure has been made in view of such circumstances, and a plurality of feed lines for feeding a plurality of heating circuits respectively embedded in a plurality of zones defined on a mounting surface of a substrate mounting table. It is an object of the present invention to provide a ceramic heater for heating a semiconductor substrate which can be stored without being complicated on the inner side of a cylindrical support provided on the lower surface side of the substrate mounting table.
- the plurality of feeding portions are disposed inside the cylindrical support so as to extend from the plurality of electrode terminals toward the insulator, and are collected at the center of the insulator along the insulator to be a substrate of the insulator It extends from the surface opposite to the surface facing the mounting table.
- a plurality of feeding parts for feeding power to a plurality of heating circuits embedded in the inside of the substrate mounting table are accommodated without being distracted inside a cylindrical support provided on the lower surface side of the substrate mounting table. be able to.
- each of the plurality of feed portions extends from the surface opposite to the first feed line extending downward inside the cylindrical support and the surface of the insulator facing the substrate mounting table.
- the conductive portion extends from the center portion of the insulator toward the outer edge portion on the lower surface of the insulator, and the conductive portion is interposed between the first feeder line and the second feeder line. It is preferable to be provided. Thereby, the interference between the feeding parts can be mitigated inside the cylindrical support.
- the connection position of each power supply unit can be easily grasped at the time of assembly or inspection.
- the first feeder line or the second feeder line is connected to the insulator by screwing, riveting, welding, or brazing.
- the feeder can be reliably connected to the conductor, so problems such as short circuit are less likely to occur.
- the first feeder is made of a stranded wire
- the second feeder is made of a conductive rod-like body.
- the ceramic heater 10 of the present disclosure comprises a substantially disc-like substrate mounting table 1 preferably having a ceramic and having a substrate mounting surface 1a on which the semiconductor substrate is mounted as shown in FIG.
- a substantially cylindrical tubular support 2 which is joined to the central portion of the lower surface of the mounting table 1 and supports the substrate mounting table 1 from its lower surface side, and the substrate mounting inside the cylindrical support 2
- a disk-shaped insulator 3 disposed to face the table 1.
- the individual electrode terminals 21 to 26 are electrically connected to one end.
- a common electrode terminal 20 is electrically connected to the other ends of the heat generating circuits 11-16.
- the end portions of the heat generating circuits 11 to 16 and the electrode terminals 20 to 26 can be connected, for example, by a joining method such as caulking, welding, brazing, or screwing.
- a total of six electrode terminals 21 to 26 and one common electrode terminal 20 partially project from the lower surface side of the substrate mounting table 1, and seven feeders 30 to 36 are connected to the projecting portions as a plurality of feeders. doing.
- Each of the seven feeders 30 to 36 includes first feeder lines 30a to 36a, second feeder lines 30b to 36b, and conductors 30c to 36c interposed between the two feeder lines.
- Six feeders 31 to 36 except for the feeder 30 for the common electrode terminal 20 located at the center of the substrate mounting surface 1a extend downward from the inside of the cylindrical support 2 and then to a circle. After being collected at the central portion of the insulator 3 along the plate-like insulator 3, it extends from the surface of the insulator 3 opposite to the surface facing the substrate mounting table 1 to the lower end side of the cylindrical support 2 It is supposed to go out.
- the common electrode terminal 20 is located at the central portion of the substrate mounting surface 1 a.
- the seven feeders 30 to 36 will be specifically described.
- first feeders 30a to 36a made of, for example, metal strands are electrically connected.
- the first feeder lines 30a to 36a depend on the inside of the cylindrical support 2 in the substantially vertical direction toward the insulator 3 located below the inside of the cylindrical support 2.
- the insulator 3 is provided with seven through holes at positions almost directly below the above-mentioned electrode terminals 20 to 26.
- the front end portions of the first feeders 30a to 36a pass through these through holes, respectively, and are conductively fixed to one end portions of the conductors 30c to 36c provided on the lower surface side of the insulator 3.
- the outer diameter of the insulator 3 is smaller than the inner diameter of the cylindrical support 2 by several mm. As a result, it is disposed so as to be suspended from the first feeders 30a to 36a in a movable state inside the cylindrical support 2.
- the tips of the seven first feeders 30a to 36a are the ends of the six conductors 31c to 36c except for the first feeder 30a for the common electrode terminal 20 on the side opposite to the center side of the insulator 3 Electrically connected to the unit.
- the six second feeders 31b to 36b extending to the outside of the cylindrical support 2 are electrically connected to the end portion on the center side of the insulator 3.
- the six feeders 31 to 36 are collected at the center of the insulator 3 inside the cylindrical support 2. Therefore, it becomes possible to connect the external power supply as a form in which the whole of seven feeders which united the feeder 30 were integrated.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Resistance Heating (AREA)
Abstract
Description
本開示は、このような事情に鑑みてなされたものであり、基板載置台の載置面上に画定した複数のゾーン内にそれぞれ埋設された複数の発熱回路に給電するための複数の給電線を、該基板載置台の下面側に設けられた筒状支持体の内側において錯綜させることなく収納することが可能な半導体基板加熱用のセラミックスヒータを提供することを目的とする。
1a、101a 基板載置面
2、102 筒状支持体
3 絶縁体
11~16 発熱回路
20、120 共通の電極端子
21~26、121~126 個別の電極端子
30~36 給電体
30a~36a 第1給電線
30b~36b 第2給電線
30c~36c 導電体
130~136 給電線
10、100 セラミックスヒータ
Claims (4)
- 上面に基板載置面を有する円板形状のセラミックスからなる基板載置台と、
前記基板載置面側から見て、前記基板載置台の複数のゾーンにそれぞれ埋設された複数の発熱回路と、
前記複数の発熱回路の端部にそれぞれ接続された複数の電極端子と、
前記複数の電極端子にそれぞれ接続された複数の給電部と、
前記基板載置台の下面中央部に接続された筒状支持体と、
前記筒状支持体の内側に前記基板載置台と対向するように配置された円板状の絶縁体と、を備え、
前記複数の給電部は、前記複数の電極端子から前記絶縁体に向かって延在するように前記筒状支持体の内側に配置され、かつ、前記絶縁体に沿って前記絶縁体の中心部に集められ前記絶縁体の前記基板載置台と対向する面とは反対側の面から延出している、セラミックスヒータ。 - 前記複数の給電部の各々は、前記筒状支持体の内側で下方に延在する第1給電線と、前記絶縁体の前記基板載置台と対向する面とは反対側の面から延出する第2給電線と、前記第1給電線と前記第2給電線の間に介在する導電部とからなり、前記導電部は、前記絶縁体の下面において絶縁体の中心部から外縁部に向かって延在するように設けられている、請求項1に記載のセラミックスヒータ。
- 少なくとも前記第1給電線又は前記第2給電線のいずれかは、前記絶縁体と、ねじ止め、リベット止め、溶接、又はろう付けにより接続されている、請求項2に記載のセラミックスヒータ。
- 前記第1給電線は撚り線からなり、前記第2給電線は導電性の棒状体からなる、請求項2又は請求項3に記載のセラミックスヒータ。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020197000209A KR102150811B1 (ko) | 2017-07-13 | 2018-06-22 | 세라믹스 히터 |
JP2019504876A JP7103340B2 (ja) | 2017-07-13 | 2018-06-22 | セラミックスヒータ |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2017-136821 | 2017-07-13 | ||
JP2017136821 | 2017-07-13 |
Publications (1)
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WO2019012959A1 true WO2019012959A1 (ja) | 2019-01-17 |
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ID=65002029
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PCT/JP2018/023863 WO2019012959A1 (ja) | 2017-07-13 | 2018-06-22 | セラミックスヒータ |
Country Status (3)
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JP (1) | JP7103340B2 (ja) |
KR (1) | KR102150811B1 (ja) |
WO (1) | WO2019012959A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022252656A1 (zh) * | 2021-06-04 | 2022-12-08 | 深圳市卓力能技术有限公司 | 雾化组件、雾化器及雾化组件的装配方法 |
GB2621859A (en) * | 2022-08-24 | 2024-02-28 | Dyson Technology Ltd | Heating element, heating system & manufacturing method |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002334828A (ja) * | 2001-05-10 | 2002-11-22 | Ibiden Co Ltd | ホットプレートユニット |
JP2008297615A (ja) * | 2007-06-01 | 2008-12-11 | Tokyo Electron Ltd | 基板載置機構及び該基板載置機構を備えた基板処理装置 |
DE202014004068U1 (de) * | 2014-03-08 | 2014-07-22 | infratransfer GmbH | Hochtemperatur-Infrarotstrahler |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3582518B2 (ja) | 2001-04-18 | 2004-10-27 | 住友電気工業株式会社 | 抵抗発熱体回路パターンとそれを用いた基板処理装置 |
-
2018
- 2018-06-22 KR KR1020197000209A patent/KR102150811B1/ko active IP Right Grant
- 2018-06-22 JP JP2019504876A patent/JP7103340B2/ja active Active
- 2018-06-22 WO PCT/JP2018/023863 patent/WO2019012959A1/ja active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002334828A (ja) * | 2001-05-10 | 2002-11-22 | Ibiden Co Ltd | ホットプレートユニット |
JP2008297615A (ja) * | 2007-06-01 | 2008-12-11 | Tokyo Electron Ltd | 基板載置機構及び該基板載置機構を備えた基板処理装置 |
DE202014004068U1 (de) * | 2014-03-08 | 2014-07-22 | infratransfer GmbH | Hochtemperatur-Infrarotstrahler |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022252656A1 (zh) * | 2021-06-04 | 2022-12-08 | 深圳市卓力能技术有限公司 | 雾化组件、雾化器及雾化组件的装配方法 |
GB2621859A (en) * | 2022-08-24 | 2024-02-28 | Dyson Technology Ltd | Heating element, heating system & manufacturing method |
Also Published As
Publication number | Publication date |
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KR102150811B1 (ko) | 2020-09-01 |
JPWO2019012959A1 (ja) | 2020-05-21 |
JP7103340B2 (ja) | 2022-07-20 |
KR20190017878A (ko) | 2019-02-20 |
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