WO2019010772A1 - 显示面板及制作方法 - Google Patents

显示面板及制作方法 Download PDF

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WO2019010772A1
WO2019010772A1 PCT/CN2017/100264 CN2017100264W WO2019010772A1 WO 2019010772 A1 WO2019010772 A1 WO 2019010772A1 CN 2017100264 W CN2017100264 W CN 2017100264W WO 2019010772 A1 WO2019010772 A1 WO 2019010772A1
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display panel
cathode
color filter
manufacturing
filter film
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French (fr)
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李松杉
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US15/578,308 priority Critical patent/US20190221614A1/en
Publication of WO2019010772A1 publication Critical patent/WO2019010772A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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    • H10K59/87—Passivation; Containers; Encapsulations
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
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    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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    • H10K50/00—Organic light-emitting devices
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    • H10K50/14—Carrier transporting layers
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    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition

Definitions

  • the invention relates to a display panel technology, in particular to a display panel and a manufacturing method thereof.
  • a color filter film Cold Filter, R, G, B color resist
  • an anode is sequentially formed after completing the Oxide TFT backplane. Then, the OLED organic light-emitting material is evaporated to form an organic light-emitting layer, and the cathode is evaporated and packaged.
  • the thickness of the display panel is increased.
  • the present invention provides a display panel and a manufacturing method thereof, thereby simplifying the process flow, reducing the manufacturing cost, and reducing the thickness of the display panel.
  • the present invention provides a display panel comprising a color filter film, the color filter film comprising a light incident surface and a light exit surface opposite thereto, and an oxide supported on the light incident surface of the color filter film
  • the back plate of the thin film transistor, the side surface of the back plate carrying the oxide thin film transistor is provided with an anode, an organic light emitting layer and a cathode in this order from bottom to top.
  • the color filter film includes a black matrix and RGB color resists disposed in the black matrix grid.
  • an encapsulation layer is disposed on the cathode.
  • the encapsulating layer is made of SiNx or SiOx.
  • the invention also provides a method for manufacturing a display panel, comprising the following steps:
  • Step S01 preparing a color filter film, the color filter film comprising a light incident surface and a light exit surface opposite thereto;
  • Step S02 forming a substrate on the light incident surface of the color filter film, the substrate facing away from the color filter film An oxide thin film transistor is fabricated on one side surface;
  • Step S03 preparing a positive electrode on a surface of the substrate carrying the oxide thin film transistor and patterning the anode
  • Step S04 forming an organic light-emitting layer on the anode
  • Step S05 forming a cathode on the organic light-emitting layer to form a cathode
  • step S06 an encapsulation layer is formed on the cathode to be packaged to obtain a display panel.
  • step S01 of forming the color filter film comprises:
  • Step S11 making a black matrix
  • Step S12 creating RGB color resistance in the black matrix.
  • the step S04 of forming the organic light-emitting layer on the anode includes forming an organic light-emitting layer on the anode by an evaporation process.
  • step S05 of forming the cathode on the organic light-emitting layer comprises: forming a cathode by an evaporation process.
  • the cathode is made of metal aluminum.
  • the encapsulating layer is made of SiNx or SiOx.
  • the present invention simplifies the process flow and reduces the manufacturing cost by fabricating a back plate on the light incident surface of the color filter film and sequentially providing an anode, an organic light emitting layer, and a cathode on the back plate, and packaging. Moreover, since the polarizer is removed, the thickness of the display panel is further reduced.
  • FIG. 1 is a schematic view showing the production of a color filter film of the present invention
  • FIG. 2 is a schematic view showing the back sheet and the anode formed on the color filter film of the present invention
  • Figure 3 is a schematic view of the structure of the present invention.
  • a display panel of the present invention is specifically an OLED (Organic Light Emitting Diode) display panel, which includes a color filter film 2, and the color filter film 2 includes a light incident surface and a light emitting surface opposite thereto.
  • a backing plate (Oxide TFT backplane, oxide array substrate) 1 carrying an oxide thin film transistor is disposed on the light incident surface of the color filter film 2, and the side of the back plate 1 carrying the oxide thin film transistor.
  • the anode 3, the organic light-emitting layer 4, and the cathode 5 are provided in this order from bottom to top, and an encapsulation layer 8 is provided on the cathode 5 to encapsulate the display panel.
  • the invention simplifies the process flow by directly manufacturing the back sheet 1 on the color filter film 2, which can save the manufacturing cost, and the thickness of the display panel is further reduced because it is not necessary to fabricate the polarizer.
  • the backplane carrying the oxide thin film transistor adopts the prior art oxide array substrate structure, and details are not described herein again, but the present invention is not limited thereto, for example, using the existing general
  • the array substrate serves as a back sheet of the present invention.
  • the color filter film 2 includes a black matrix 6 and an RGB color resist 7 disposed in the grid of the black matrix 6.
  • the black matrix 6 replaces the polarizer to enable the display panel to be normally displayed. To further reduce manufacturing costs.
  • the cathode 5 is made of metal aluminum (Al) and has a thickness of 200 nm; the encapsulating layer 8 is made of SiNx or SiOx material; and the anode 3 is made of transparent ITO (indium tin oxide) material.
  • the organic light-emitting layer 4 includes a hole transport layer (HTL), a light-emitting layer (EL), and an electron transport layer (ETL). It is noted that the organic light-emitting layer 4 is a prior art and is not specifically limited herein.
  • a method for fabricating a display panel of the present invention is mainly a step of fabricating a device, wherein the preparation process involved is substantially the same as that used in the prior art for preparing an OLED, and includes the following steps:
  • a color filter film 2 is formed. Specifically, a color filter film 2 is formed by a photolithography process (PHOTO technology), and the color filter film 2 includes a light incident surface and is opposite thereto. Illuminating surface;
  • the step S01 includes the following two steps:
  • Step S11 making a black matrix (BM) 6, which is fabricated by a photolithography process using the prior art
  • Step S12 an RGB color resist 7 is fabricated in the black matrix 6, and the RGB color resist 7 is fabricated by a photolithography process of the prior art.
  • Step S02 the substrate 1 is formed on the light incident surface of the color filter film 2, and an oxide thin film transistor is formed on the surface of the substrate 1 facing away from the color filter film 2.
  • the substrate 1 is an oxide thin film transistor.
  • Backplane (Oxide TFT backplane);
  • Step S03 as shown in FIG. 2, an anode electrode is formed on the surface of the substrate 1 carrying the oxide thin film transistor and patterned to form the anode 3, specifically, the surface on the side of the substrate 1 carrying the oxide thin film transistor.
  • a transparent ITO (indium tin oxide) material is used to form a side ITO film, and the ITO film is patterned by a prior art photolithography process to form an anode 3;
  • Step S04 forming an organic light-emitting layer 4 on the anode 3, specifically, forming an organic light-emitting layer 4 on the anode 3 by an evaporation process, and depositing a plurality of organic thin films to form a corresponding film layer, and the organic light-emitting layer 4 includes a hole transport layer (HTL), a light-emitting layer (EL), and an electron transport layer (ETL), which may be vapor-deposited in a vacuum chamber, and is not specifically limited herein;
  • HTL hole transport layer
  • EL light-emitting layer
  • ETL electron transport layer
  • Step S05 forming a cathode electrode on the organic light-emitting layer 4 to form a cathode 5, specifically, forming a cathode 5 on the organic light-emitting layer 4 to form a cathode 5 by an evaporation process, and the evaporation process may be performed in a vacuum chamber.
  • the material for making the cathode 5 is aluminum metal (Al) and has a thickness of 200 nm;
  • Step S06 as shown in FIG. 3, the encapsulation layer 8 is formed on the cathode 5 to be packaged to obtain a display panel. Specifically, the organic light-emitting layer 4 and the cathode 5 are immediately oxidized after being exposed to water and air, so that the device performance is rapidly degraded.
  • the package needs to be packaged in a vacuum environment or filled with an inert gas to avoid moisture and air to the device.
  • the inert gas may be nitrogen.
  • the encapsulation process may be performed by a packaging process in the prior art, which is not specifically limited herein; the encapsulation layer 8 is made of SiNx or SiOx.
  • the surface of the ITO film as an anode directly affects the injection of holes and the organic film
  • the electronic state of the interface between the layers and the film formation of the organic material If the surface of the ITO is not clean, the surface free energy becomes small, resulting in aggregation of the hole transporting material deposited thereon and uneven film formation. Therefore, after the ITO film is formed and before the photolithography process, the surface of the ITO film can be treated.
  • the process is: detergent cleaning ⁇ ethanol cleaning ⁇ acetone cleaning ⁇ pure water cleaning, all of which are cleaned by an ultrasonic cleaning machine. Then use an infrared oven to dry and use.
  • the surface-activated treatment of the cleaned ITO film is also required to increase the oxygen content of the ITO surface layer and improve the work function of the ITO surface.
  • the surface of the ITO can also be treated with a hydrogen peroxide solution mixed with water, hydrogen peroxide or ammonia, so that the excess tin content on the ITO surface is reduced and the proportion of oxygen is increased to increase the work function of the ITO surface to increase the probability of hole injection, thereby enabling the OLED device.
  • the brightness is increased by an order of magnitude.
  • the main purpose is to remove the organic matter remaining on the ITO surface, promote the oxidation of the ITO surface, increase the work function of the ITO surface, and improve the smoothness of the ITO surface. degree.
  • the untreated ITO surface work function is about 4.6 eV, and the work function of the ITO surface after UV-ozone or plasma surface treatment is 5.0 eV or more, and the luminous efficiency and working life are improved.
  • the surface of the ITO glass must be treated in a dry vacuum environment. The treated substrate with the ITO film cannot be placed in the air for too long, otherwise the ITO surface will lose its activity.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种显示面板，包括彩色滤光膜（2），彩色滤光膜（2）包括一入光面以及与之相对的出光面，在彩色滤光膜（2）的入光面上设有承载有氧化物薄膜电晶体管的背板（1），背板（1）上承载有氧化物薄膜电晶体管的一侧表面从下至上依次设有阳极（3）、有机发光层（4）以及阴极（5）。一种显示面板的制作方法，包括制作彩色滤光膜（2）；在彩色滤光膜（2）的入光面上制作基板（1）；在基板（1）一侧表面制作阳电极并图形化形成阳极（3）；在阳极（3）上制作有机发光层（4）；在有机发光层（4）上制作阴电极形成阴极（5）；在阴极（5）上制作封装层（8）进行封装，得到显示面板。与现有技术相比，简化工艺流程，降低制造成本，而且由于去掉了偏光片，使显示面板的厚度进一步减小。

Description

显示面板及制作方法 技术领域
本发明涉及一种显示面板技术，特别是一种显示面板及制作方法。
背景技术
在传统的OLED(有机发光二极管)面板的制作过程中，在完成Oxide TFT backplane(氧化物薄膜电晶体管背板)后依次制作彩色滤光膜(Colour Filter、R、G、B色阻)以及阳极，然后蒸镀OLED有机发光材料形成有机发光层，再蒸镀阴极并封装。但是要让显示面板正常显示，还需要在氧化物薄膜电晶体管背板背离彩色滤光膜的一侧表面上还需要设置一块偏光片(polarizer)，这样会使制作工艺流程复杂，制造成本高，而且会使显示面板的厚度加厚。
发明内容
为克服现有技术的不足，本发明提供一种显示面板及制作方法，从而简化工艺流程、降低制造成本以及减小显示面板的厚度。
本发明提供了一种显示面板，包括彩色滤光膜，所述彩色滤光膜包括一入光面以及与之相对的出光面，在彩色滤光膜的入光面上设有承载有氧化物薄膜电晶体管的背板，背板上承载有氧化物薄膜电晶体管的一侧表面从下至上依次设有阳极、有机发光层以及阴极。
进一步地，所述彩色滤光膜包括黑色矩阵以及设于黑色矩阵网格中的RGB色阻。
进一步地，所述阴极上设有封装层。
进一步地，所述封装层的制作材料为SiNx或SiOx。
本发明还提供了一种显示面板的制作方法，包括如下步骤：
步骤S01、制作彩色滤光膜，所述彩色滤光膜包括一入光面和与之相对的出光面；
步骤S02、在彩色滤光膜的入光面上制作基板，在基板背离彩色滤光膜的 一侧表面上制作氧化物薄膜电晶体管；
步骤S03、在基板承载有氧化物薄膜电晶体管的一侧表面制作阳电极并图形化形成阳极；
步骤S04、在阳极上制作有机发光层；
步骤S05、在有机发光层上制作阴电极形成阴极；
步骤S06、在阴极上制作封装层进行封装，得到显示面板。
进一步地，所述步骤S01制作彩色滤光膜包括：
步骤S11、制作黑色矩阵；
步骤S12、在黑色矩阵中制作RGB色阻。
进一步地，所述步骤S04在阳极上制作有机发光层包括在阳极上通过蒸镀工艺制作有机发光层。
进一步地，所述步骤S05在有机发光层上制作阴极包括通过蒸镀工艺制作阴极。
进一步地，所述阴极的制作材料为金属铝。
进一步地，所述封装层的制作材料为SiNx或SiOx。
本发明与现有技术相比，通过在彩色滤光膜的入光面上制作背板并在背板上依次设置阳极、有机发光层、阴极并进行封装，从而简化工艺流程，降低制造成本，而且由于去掉了偏光片，使显示面板的厚度进一步减小。
附图说明
图1是本发明制作彩色滤光膜的示意图；
图2是本发明在彩色滤光膜上制作背板以及阳极的示意图；
图3是本发明的结构示意图。
具体实施方式
下面结合附图和实施例对本发明作进一步详细说明。
如图3所示，本发明的一种显示面板，具体为OLED(有机发光二极管)显示面板，其包括彩色滤光膜2，彩色滤光膜2包括一入光面以及与之相对的出光面，在彩色滤光膜2的入光面上设有承载有氧化物薄膜电晶体管的背板(Oxide TFT backplane、氧化物阵列基板)1，背板1上承载有氧化物薄膜电晶体管的一侧表面从下至上依次设有阳极3、有机发光层4以及阴极5，在阴极5上设有封装层8对显示面板进行封装。本发明通过将背板1直接制作在彩色滤光膜2上，从而简化了工艺流程，这样能够节省制作成本，由于无需制作偏光片，使显示面板的厚度进一步降低。
作为本发明的一种实施方式，承载有氧化物薄膜电晶体管的背板采用现有技术的氧化物阵列基板结构，在此不再赘述，但本发明也不限于此，例如采用现有的一般阵列基板作为本发明的背板。
作为本发明的一种实施方式，彩色滤光膜2包括黑色矩阵6以及设于黑色矩阵6网格中的RGB色阻7，通过黑色矩阵6替代偏光片的作用，使显示面板能够正常的显示，进一步减低制造成本。
本发明中，阴极5的制作材料为金属铝(Al)，厚度为200nm；封装层8的制作材料为SiNx或SiOx材料；阳极3的制作材料为透明ITO(氧化铟锡)材料。
本发明中有机发光层4包括空穴传输层(HTL)、发光层(EL)与电子传输层(ETL)，值得注意的是有机发光层4为现有技术，在此不做具体限定。
本发明的一种显示面板的制作方法，其主要改进的为制作器件的步骤，其中涉及的制备工艺与现有技术中制备OLED所采用的制备工艺基本相同，包括如下步骤：
步骤S01、如图1所示，制作彩色滤光膜2，具体地，采用光刻工艺(PHOTO技术)制作彩色滤光膜2，所述彩色滤光膜2包括一入光面和与之相对的出光面；
所述步骤S01包括以下两步：
步骤S11、制作黑色矩阵(Black Matrix，BM)6，采用现有技术通过光刻工艺制作；
步骤S12、在黑色矩阵6中制作RGB色阻7，RGB色阻7的制作方法采用现有技术的光刻工艺实现。
步骤S02、在彩色滤光膜2的入光面上制作基板1，在基板1背离彩色滤光膜2的一侧表面上制作氧化物薄膜电晶体管，本发明中基板1为氧化物薄膜电晶体管背板(Oxide TFT backplane)；
步骤S03、如图2所示，在基板1承载有氧化物薄膜电晶体管的一侧表面制作阳电极并图形化形成阳极3，具体为在在基板1承载有氧化物薄膜电晶体管的一侧表面采用透明ITO(氧化铟锡)材料形成一侧ITO膜，采用现有技术的光刻工艺对ITO膜进行图形化形成阳极3；
步骤S04、在阳极3上制作有机发光层4，具体地，在阳极3上通过蒸镀工艺制作有机发光层4，通过蒸镀多层有机薄膜，从而形成相应的膜层，有机发光层4包括空穴传输层(HTL)、发光层(EL)与电子传输层(ETL)，所述蒸镀工艺可以采用在真空腔中进行蒸镀，在此不做具体限定；
步骤S05、在有机发光层4上制作阴电极形成阴极5，具体地，在有机发光层4上制作阴极5为通过蒸镀工艺制作阴极5，所述蒸镀工艺可以采用在真空腔中进行，在此不做具体限定；所述用于制作阴极5的材料为金属铝(Al)，厚度为200nm；
步骤S06、如图3所示，在阴极5上制作封装层8进行封装，得到显示面板；具体地，有机发光层4及阴极5遇水和空气后会立即氧化，使器件性能迅速下降，因此，封装需要在真空环境或将腔体充入不活泼气体下进行封装，从而避免水气以及空气对器件的影响，所述不活泼气体可以为氮气。所述封装工艺可采用现有技术中的封装工艺进行，在此不做具体限定；封装层8的制作材料为SiNx或SiOx。
本发明将ITO膜作为阳极其表面状态直接影响空穴的注入和与有机薄膜 层间的界面电子状态及有机材料的成膜性。如果ITO表面不清洁，其表面自由能变小，从而导致蒸镀在上面的空穴传输材料发生凝聚、成膜不均匀。因此，在制作完ITO膜后、进行光刻工艺前还可以对ITO膜表面进行处理，处理过程为：洗洁精清洗→乙醇清洗→丙酮清洗→纯水清洗，均用超声波清洗机进行清洗，然后再用红外烘箱烘干待用。对洗净后的ITO膜还需进行表面活化处理，以增加ITO表面层的含氧量，提高ITO表面的功函数。
也可以用水、双氧水、氨水混合溶液过氧化氢溶液处理ITO表面，使ITO表面过剩的锡含量减少而氧的比例增加，以提高ITO表面的功函数来增加空穴注入的几率，可使OLED器件亮度提高一个数量级。
在使用具有ITO膜的背板前还应经过“紫外线-臭氧”或“等离子”表面处理，主要目的是去除ITO表面残留的有机物、促使ITO表面氧化、增加ITO表面的功函数、提高ITO表面的平整度。未经处理的ITO表面功函数约为4.6eV，经过紫外线-臭氧或等离子表面处理后的ITO表面的功函数为5.0eV以上，发光效率及工作寿命都会得到提高。对ITO玻璃表面进行处理一定要在干燥的真空环境中进行，处理过的具有ITO膜的基板不能在空气中放置太久，否则ITO表面就会失去活性。
虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。

Claims (13)

  1. 一种显示面板，其中：包括彩色滤光膜，所述彩色滤光膜包括一入光面以及与之相对的出光面，在彩色滤光膜的入光面上设有承载有氧化物薄膜电晶体管的背板，背板上承载有氧化物薄膜电晶体管的一侧表面从下至上依次设有阳极、有机发光层以及阴极。
  2. 根据权利要求1所述的显示面板，其中：所述彩色滤光膜包括黑色矩阵以及设于黑色矩阵网格中的RGB色阻。
  3. 根据权利要求1所述的显示面板，其中：所述阴极上设有封装层。
  4. 根据权利要求2所述的显示面板，其中：所述阴极上设有封装层。
  5. 根据权利要求3所述的显示面板，其中：所述封装层的制作材料为SiNx或SiOx。
  6. 根据权利要求4所述的显示面板，其中：所述封装层的制作材料为SiNx或SiOx。
  7. 一种显示面板的制作方法，其中：包括如下步骤：
    步骤S01、制作彩色滤光膜，所述彩色滤光膜包括一入光面和与之相对的出光面；
    步骤S02、在彩色滤光膜的入光面上制作基板，在基板背离彩色滤光膜的一侧表面上制作氧化物薄膜电晶体管；
    步骤S03、在基板承载有氧化物薄膜电晶体管的一侧表面制作阳电极并图形化形成阳极；
    步骤S04、在阳极上制作有机发光层；
    步骤S05、在有机发光层上制作阴电极形成阴极；
    步骤S06、在阴极上制作封装层进行封装，得到显示面板。
  8. 根据权利要求7所述的显示面板的制作方法，其中：所述步骤S01制作彩色滤光膜包括：
    步骤S11、制作黑色矩阵；
    步骤S12、在黑色矩阵中制作RGB色阻。
  9. 根据权利要求7所述的显示面板的制作方法，其中：所述步骤S04在阳极上制作有机发光层包括在阳极上通过蒸镀工艺制作有机发光层。
  10. 根据权利要求7所述的显示面板的制作方法，其中：所述步骤S05在有机发光层上制作阴极包括通过蒸镀工艺制作阴极。
  11. 根据权利要求7所述的显示面板的制作方法，其中：所述阴极的制作材料为金属铝。
  12. 根据权利要求10所述的显示面板的制作方法，其中：所述阴极的制作材料为金属铝。
  13. 根据权利要求7所述的显示面板的制作方法，其中：所述封装层的制作材料为SiNx或SiOx。
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