WO2019007009A1 - 一种多级单元薄膜晶体管存储器及其制备方法 - Google Patents

一种多级单元薄膜晶体管存储器及其制备方法 Download PDF

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Publication number
WO2019007009A1
WO2019007009A1 PCT/CN2017/119769 CN2017119769W WO2019007009A1 WO 2019007009 A1 WO2019007009 A1 WO 2019007009A1 CN 2017119769 W CN2017119769 W CN 2017119769W WO 2019007009 A1 WO2019007009 A1 WO 2019007009A1
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layer
charge
charge trapping
thin film
trapping layer
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PCT/CN2017/119769
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English (en)
French (fr)
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丁士进
钱仕兵
刘文军
张卫
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复旦大学
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Priority to US16/482,121 priority Critical patent/US11011534B2/en
Publication of WO2019007009A1 publication Critical patent/WO2019007009A1/zh

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    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
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    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02189—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing zirconium, e.g. ZrO2

Definitions

  • the present invention relates to the field of semiconductor integrated circuit fabrication technology, and in particular, to a multi-level cell thin film transistor memory and a method for fabricating the same.
  • Non-volatile memory is an important type of memory, which is widely used in electronic products such as computers, mobile phones, mobile hard disks, and network infrastructure devices such as servers and network interconnection devices.
  • SOPs next-generation system panels
  • a-IGZO novel amorphous indium gallium zinc oxide
  • storage density is also an important parameter of the memory.
  • the traditional method of increasing the storage density is mainly to reduce the size of the memory device and increase the number of devices per unit area, thereby increasing the storage density.
  • the complexity of device fabrication processes increases, resulting in increased device manufacturing costs. Therefore, implementing multi-level cell storage on a single memory cell is an effective way to increase storage density. It not only increases storage density but also reduces costs.
  • An object of the present invention is to provide a multi-level cell thin film transistor memory and a method of fabricating the same, which are used for improving data retention characteristics and device performance stability, can realize multi-level cell storage, and improve storage density.
  • the present invention provides a multi-level cell thin film transistor memory, the memory having a structure from bottom to top, a gate electrode, a charge blocking layer, a charge trapping layer, a charge tunneling layer, an active region, and Source and drain electrodes;
  • the charge tunneling layer completely surrounds the charge trapping layer to completely isolate the charge trapping layer from the outside;
  • the material of the charge trapping layer is ZnO, In 2 O 3 , Ga 2 O 3 , SnO 2. Any one of InSnO or indium gallium zinc oxide (IGZO).
  • the material of the gate electrode is a P-type single crystal silicon wafer, a glass or a PI flexible substrate.
  • the P-type single crystal silicon wafer has a resistivity of 0.001 to 0.005 ⁇ cm.
  • the material of the source and drain electrodes is Ti/Au or Mo.
  • the present invention also provides a method for fabricating the above-described multi-level cell thin film transistor memory, comprising the following steps:
  • Step 1 preparing a gate electrode
  • Step 2 using the atomic layer deposition method (ALD method) to grow a charge blocking layer on the gate electrode obtained in step 1, the thickness of the charge blocking layer is 30-60 nm, and the deposition temperature is 150-350 ° C;
  • ALD method atomic layer deposition method
  • Step 3 in the step 2 obtained on the charge blocking layer by atomic deposition or magnetron sputtering deposition method (PVD method) to grow a charge trapping layer, the thickness of the charge trapping layer is 10 ⁇ 40nm;
  • Step 4 spin-coating a positive photoresist on the charge trapping layer obtained in step 3, and then performing photolithography (exposure and development) to define a region of the charge trapping layer, followed by a wet etching process a portion of the region other than the region of the charge trapping layer defined by the etch;
  • Step 5 The charge trapping layer is grown by the atomic layer deposition method on the charge trapping layer obtained in step 4 and the exposed charge blocking layer.
  • the thickness of the charge tunneling layer is 6-15 nm, and the deposition temperature is 150 to 350 ° C;
  • Step 6 On the charge tunneling layer obtained in step 4, an IGZO thin film is grown by magnetron sputtering deposition as an active layer of the device, and then an active region is defined by a photolithography process and a wet etching process. Forming an active channel of the device, the thickness of the IGZO film being 30 to 60 nm;
  • Step 7 Spin-coating a negative photoresist on the IGZO film obtained in the step 6, and defining the source and drain electrode pattern regions by photolithography; then, using a magnetron sputtering deposition method or an electron beam thermal evaporation method A metal film is deposited as a source and drain electrode material, and a metal layer other than the source and drain electrode pattern regions is removed by a lift-off process to form source and drain electrodes of the device, and the thickness of the metal film is 50 to 200 nm.
  • Step 8 the device obtained in step 7 is subjected to subsequent annealing treatment, the annealing atmosphere is oxygen or air, the annealing temperature is 150-350 ° C, and the annealing time is 60 s to 2 h;
  • the step 1 specifically includes: using a P-type single crystal silicon wafer as a substrate, and forming a gate electrode by standard cleaning, or lining a glass or PI flexible substrate A metal layer is deposited thereon and a gate electrode is formed by photolithography and etching.
  • the present invention has the following beneficial effects:
  • the charge trapping layer of the thin film transistor memory prepared by the present invention is completely surrounded by the charge tunneling layer, and thus can be completely isolated from the outside, thereby preventing the physical properties and chemical composition of the charge trapping layer from being changed during the annealing process, thereby reducing
  • the loss of charge stored in the charge trapping layer improves the retention characteristics of the data and the stability of the device performance;
  • the present invention uses a metal oxide semiconductor film as a charge trapping layer of a memory, and a device unit can store a plurality of bits, which can realize a multi-level cell storage function and improve storage density;
  • the thin film transistor memory prepared by the present invention can be prepared at a low temperature of less than 350 ° C, thereby reducing the thermal budget of the device fabrication, and the materials, process temperatures, device structures, etc. used for the thin film transistor (TFT) display. Consistent, the preparation process is compatible with the preparation process of the TFT display. In addition, due to the high visible light transmittance of the IGZO film, the present invention has broad application prospects in the fields of future SOPs and flexible transparent electronic devices.
  • FIG. 1 is a schematic cross-sectional view of a multi-level cell memory structure
  • 2 is a graph of programming characteristics of a multi-level cell memory based on a ZnO charge trapping layer
  • 3 is a graph of erase characteristics of a multi-level cell memory based on a ZnO charge trapping layer
  • FIG. 4 is a graph of charge retention characteristics of a multi-level cell memory based on a ZnO charge trapping layer.
  • the present invention provides a multi-level cell thin film transistor memory.
  • the structure of the memory is sequentially disposed from bottom to top: a gate electrode 10, a charge blocking layer 20, a charge trapping layer 30, and a charge tunneling layer 40. , active region 50 and source and drain electrodes 60;
  • the charge tunneling layer 40 completely surrounds the charge trapping layer 30 to completely isolate the charge trapping layer 30 from the outside;
  • the material of the charge trapping layer 30 is ZnO, In 2 O 3 , Ga 2 Any of O 3 , SnO 2 , InSnO or IGZO.
  • the material of the gate electrode 10 is a P-type single crystal silicon wafer, a glass or a PI flexible substrate.
  • the P-type single crystal silicon wafer has a resistivity of 0.001 to 0.005 ⁇ cm.
  • the material of the source and drain electrodes 60 is Ti/Au or Mo.
  • the present invention also provides a method for fabricating the above-described multi-level cell thin film transistor memory, comprising the following steps:
  • Step 1 preparing a gate electrode 10
  • Step 2 the gate electrode 10 obtained in step 1 is grown by atomic layer deposition method, the charge blocking layer 20 has a thickness of 30-60 nm, and the deposition temperature is 150-350 ° C;
  • Step 3 the charge trap layer 20 is deposited on the charge blocking layer 20 obtained in step 2 by atomic deposition or magnetron sputtering deposition method, the thickness of the charge trapping layer 30 is 10 ⁇ 40nm;
  • Step 4 spin-coating a positive photoresist on the charge trapping layer 30 obtained in step 3, and then performing photolithography to define a region of the charge trapping layer 30, followed by etching by a wet etching process. a portion of the charge trapping layer 30 region;
  • Step 5 The charge trapping layer 40 is grown on the charge trapping layer 30 obtained in the step 4 and the exposed charge blocking layer 20 by an atomic layer deposition method.
  • the thickness of the charge tunneling layer 40 is 6-15 nm.
  • the deposition temperature is 150 to 350 ° C;
  • Step 6 On the charge tunneling layer 40 obtained in the step 4, a IGZO thin film is grown by magnetron sputtering deposition as an active layer of the device, and then defined by a photolithography process and a wet etching process. a region 50, forming an active channel of the device, the thickness of the IGZO film is 30 to 60 nm;
  • Step 7 spin-coat a negative photoresist on the IGZO film obtained in step 6, and define a pattern region (opening region) of the source and drain electrodes 60 by photolithography; then, adopt magnetron sputtering deposition method or electron
  • the beam thermal evaporation method deposits a metal film as the source and drain electrode 60 material, and removes the metal layer outside the pattern region of the source and drain electrodes 60 by a lift-off process, thereby forming the source and drain electrodes 60 of the device, and the thickness of the metal film is 50 to 200 nm;
  • Step 8 The subsequent annealing treatment is performed on the device obtained in the step 7.
  • the annealing atmosphere is oxygen or air
  • the annealing temperature is 150-350 ° C
  • the annealing time is 60 s to 2 h.
  • the step 1 specifically includes: using a P-type single crystal silicon wafer as a substrate, and forming the gate electrode 10 by standard cleaning, or using a glass or PI flexible substrate as The substrate is deposited with a layer of metal thereon, and the gate electrode 10 is formed by photolithography and etching.
  • Embodiment 1 is a diagrammatic representation of Embodiment 1:
  • This embodiment uses a ZnO thin film as the charge trapping layer 30, and the specific preparation process is as follows:
  • Step 1 a resistivity of 0.001 ⁇ 0.005 ⁇ ⁇ cm P-type single crystal silicon wafer as a substrate, using a standard RCA cleaning process to clean the substrate to form a gate electrode 10;
  • Step 2 using the ALD method on the gate electrode 10 to grow a layer of Al 2 O 3 film as the charge blocking layer 20; deposition temperature is 150-350 ° C, preferably 300 ° C; film thickness is 30-60 nm, preferably 35 nm;
  • Step 3 using a ALD method or a PVD method on the charge blocking layer 20 to grow a ZnO thin film as the charge trapping layer 30; a deposition temperature of 150-350 ° C, preferably 200 ° C; a film thickness of 10 ⁇ 40 nm, preferably 20 nm;
  • Step 4 spin coating a layer of positive photoresist on the charge trapping layer 30, then performing exposure and development to define a region of the charge trapping layer 30 in the device; then etching the region of the charge trapping layer 30 with a diluted hydrochloric acid solution. Outside part;
  • Step 5 after the charge trap layer 30 and the diluted hydrochloric acid solution are etched and exposed on the external charge blocking layer 20, an Al 2 O 3 film is grown by the ALD method as the charge tunneling layer 40; the deposition temperature is 150. ⁇ 350° C., preferably 300° C.; film thickness is 6-15 nm, preferably 8 nm;
  • the operating pressure is 0.88 Pa
  • the working pressure is 0.88 Pa
  • the flow rates of Ar and O 2 flowing into the deposition chamber are 50 sccm and 0 sccm, respectively; then the active region 50 is defined by a photolithography process and a wet etching method to form a device.
  • the source channel, the IGZO film has a thickness of 30 to 60 nm, preferably 40 nm;
  • Step 7 spin-coating a negative photoresist on the IGZO film, defining a pattern region (opening region) of the source and drain electrodes 60 by a photolithography process; using a magnetron sputtering deposition method or an electron beam evaporation method
  • a Ti/Au double-layer metal film is deposited as a material of the source and drain electrodes 60.
  • the thickness of the metal film is 50-200 nm, preferably 100 nm.
  • a metal layer other than the pattern region of the source and drain electrodes 60 is removed by a lift-off process to form a device.
  • the device is subjected to subsequent annealing treatment, the annealing atmosphere is oxygen (O 2 ), the annealing temperature is 150-350 ° C, and the temperature is preferably 250 ° C.
  • the annealing time is 60 to 600 s, preferably 300 s.
  • 2 is a programming characteristic of the memory prepared in the first embodiment.
  • the programming window (the difference between the threshold voltage after programming and the threshold voltage of the initial state) is increased from 1.47V. To 2.75V; when the programming time is 10ms, the programming window is increased from 1.89V to 3.44V when the programming voltage is increased from 10V to 16V. These data indicate that the device has good programming characteristics.
  • 3 is an erasing characteristic of the memory prepared in the first embodiment.
  • the erase window (the difference between the threshold voltage after erasing and the threshold voltage of the initial state) Increasing from 2V to 4.99V; when the fixed erase time is 1 ⁇ s, the erase window is increased from 2V to 8.5V when the erase voltage is increased from -8V to -14V. This indicates that the memory prepared in the first embodiment has a very high electrical erasing efficiency.
  • Fig. 4 shows the charge retention characteristics of the memory states prepared in the first embodiment in different memory states.
  • the operating condition of the "11" state is 15V/10ms; the operating condition of the "00” state is the initial state of the device; the operating conditions of the "10” state and the “01” state are -8V/10 ⁇ s and -14V/1 ⁇ s, respectively. It can be seen from the figure that when the hold time reaches 105s, the "11" state to the "00" state storage window of the device is 2V; the "00" state to the “10” state storage window is 1.1V; the "10” state is The “01” state storage window is 1.6V. This allows the memory to normally distinguish between four different memory states "00", “10", “01”, and "11".
  • Embodiment 2 is a diagrammatic representation of Embodiment 1:
  • This embodiment uses an IGZO film as the charge trapping layer 30, and the specific preparation process is as follows:
  • Step 1 a resistivity of 0.001 ⁇ 0.005 ⁇ ⁇ cm P-type single crystal silicon wafer as a substrate, using a standard RCA cleaning process to clean the substrate to form a gate electrode 10;
  • Step 2 using the ALD method on the gate electrode 10 to grow a layer of Al 2 O 3 film as the charge blocking layer 20; deposition temperature is 150-350 ° C, preferably 300 ° C; film thickness is 30-60 nm, preferably 35 nm;
  • Step 3 a IGZO thin film is grown on the charge blocking layer 20 by a PVD method as the charge trapping layer 30;
  • the thickness of the IGZO film is 10-40nm, preferably 20nm;
  • Step 4 spin coating a layer of positive photoresist on the charge trapping layer 30, then performing exposure and development to define a region of the charge trapping layer 30 in the device; then etching the region of the charge trapping layer 30 with a diluted hydrochloric acid solution. Outside part;
  • Step 5 after the charge trap layer 30 and the diluted hydrochloric acid solution are etched and exposed on the external charge blocking layer 20, an Al 2 O 3 film is grown by the ALD method as the charge tunneling layer 40; the deposition temperature is 150. ⁇ 350° C., preferably 300° C.; film thickness is 6-15 nm, preferably 8 nm;
  • the operating pressure is 0.88 Pa
  • the working pressure is 0.88 Pa
  • the flow rates of Ar and O 2 flowing into the deposition chamber are 50 sccm and 0 sccm, respectively; then the active region 50 is defined by a photolithography process and a wet etching method to form a device.
  • the source channel, the IGZO film has a thickness of 30 to 60 nm, preferably 40 nm;
  • Step 7 spin-coating a negative photoresist on the IGZO film, defining a pattern region (opening region) of the source and drain electrodes 60 by a photolithography process; using a magnetron sputtering deposition method or an electron beam evaporation method A layer of Mo metal film is used as the material of the source and drain electrodes 60.
  • the thickness of the metal film is 50-200 nm, preferably 100 nm.
  • a metal layer other than the pattern region of the source and drain electrodes 60 is removed by a lift-off process to form a source and a drain of the device. Extreme 60;
  • step 8 the device is subjected to subsequent annealing treatment, the annealing atmosphere is air, the annealing temperature is 150-350 ° C, preferably the temperature is 300 ° C; the annealing time is 0.5-2 h, preferably 1 h.
  • Different voltages can be implemented by performing different voltage programming on the memory prepared in the second embodiment. For example, when a voltage of 12V, 10ms is applied to the gate, the device changes from an initial state to a programmed state, and the two states can be mutually transformed. (The voltage pulse condition restored to the initial state is -12V, 20ms); when a pulse of -15V, 10ms is applied to the gate, the device changes from the initial state to the erased state, and the two states can also be mutually transformed ( The voltage pulse condition restored to the initial state is 11V, 15ms). Table 1 lists the retention characteristics of the different states of the memory prepared in the second embodiment.
  • the threshold voltages (V th ) of the program state, initial state, and erase state are changed from 2.276V, -0.09V, -2.4V to 1.574V, -0.339V, respectively. -1.634V, showing good stability.
  • the charge trapping layer of the thin film transistor memory prepared by the present invention is completely surrounded by the charge tunneling layer, and thus is completely isolated from the outside, preventing the physical properties and chemical composition of the charge trapping layer from being changed during the process, and reducing
  • the loss of charge stored in the charge trapping layer improves the retention characteristics of the data and the stability of the device performance;
  • the present invention uses a metal oxide semiconductor film as a charge trapping layer of the memory, which can realize multi-level cell storage and improve storage density.
  • the thin film transistor memory prepared by the present invention can be prepared at a low temperature of less than 350 ° C, thereby reducing the thermal budget of device fabrication, and the preparation process is compatible with the thin film transistor process.
  • the present invention due to the high visible light transmittance of the IGZO film, the present invention has broad application prospects in the fields of future SOPs and flexible transparent electronic devices.

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Abstract

一种多级单元薄膜晶体管存储器及其制备方法，所述存储器的结构从下至上依次设置有：栅电极（10）、电荷阻挡层（20）、电荷俘获层（30）、电荷隧穿层（40）、有源区（50）以及源、漏电极（60）；其中，所述电荷隧穿层（40）将所述电荷俘获层（30）完全包围，以使所述电荷俘获层（30）与外界完全隔离；所述电荷俘获层（30）的材料为ZnO、In2O3、Ga2O3、SnO2、InSnO或IGZO中的任意一种。该薄膜晶体管存储器的电荷俘获层（30）完全被电荷隧穿层（40）包围，与外界完全隔离，防止了在工艺过程中电荷俘获层（30）的物理性质和化学组成发生改变，减少了存储在电荷俘获层（30）中电荷的流失，提高了数据的保持特性和器件性能的稳定性；采用金属氧化物半导体薄膜作为存储器的电荷俘获层（30），可以实现多级单元存储，提高了存储密度。

Description

一种多级单元薄膜晶体管存储器及其制备方法 技术领域
本发明涉及半导体集成电路制备技术领域，具体涉及一种多级单元薄膜晶体管存储器及其制备方法。
背景技术
非易失性存储器是一类重要的存储器，其广泛应用于计算机、手机、移动硬盘等电子产品以及服务器、网络互联设备等网络基础设备中。然而，传统的硅基非易失性存储器由于其制备工艺复杂且加工温度高，无法满足下一代系统面板(SOP)、未来透明和柔性电子器件等领域的发展需求。近些年来，基于新型非晶铟镓锌氧化物(a-IGZO)半导体沟道的薄膜晶体管存储器已成为国际上研究的热点。这是由于该类存储器具有简单的制备工艺(无离子注入或掺杂)、较低的加工温度、优良的可见光透过率以及其制备工艺与薄膜晶体管工艺相兼容等优点，因此使得其在未来SOP以及柔性透明电子器件等领域具有广泛的应用前景。
另一方面，存储密度也是存储器的重要参数。提高存储密度的传统方法主要是缩小存储器件的尺寸，增加单位面积内器件数目，从而增加存储密度。但随着器件尺寸不断缩小，器件制备工艺复杂度升高，导致器件的制造成本也随之增加。因此，在单个存储器单元上实现多级单元存储是提高存储密度的一种有效的方法。它不仅能够提高存储密度，还可以降低成本。
发明的公开
本发明的目的是提供一种多级单元薄膜晶体管存储器及其制备方法，该存储器用于提高数据的保持特性和器件性能的稳定性，可以实现多级单元存储，提高了存储密度。
为达到上述目的，本发明提供了一种多级单元薄膜晶体管存储器，所述 存储器的结构从下至上依次设置有：栅电极、电荷阻挡层、电荷俘获层、电荷隧穿层、有源区以及源、漏电极；
其中，所述电荷隧穿层将所述电荷俘获层完全包围，以使所述电荷俘获层与外界完全隔离；所述电荷俘获层的材料为ZnO、In 2O 3、Ga 2O 3、SnO 2、InSnO或铟镓锌氧化物(IGZO)中的任意一种。
上述的多级单元薄膜晶体管存储器，其中，所述栅电极的材料为P型单晶硅片、玻璃或者PI柔性基板。
上述的多级单元薄膜晶体管存储器，其中，所述P型单晶硅片的电阻率为0.001～0.005Ω·cm。
上述的多级单元薄膜晶体管存储器，其中，所述电荷阻挡层的材料为Al 2O 3、SiO 2、HfO 2或ZrO 2。
上述的多级单元薄膜晶体管存储器，其中，所述电荷隧穿层的材料为Al 2O 3、SiO 2、HfO 2或ZrO 2。
上述的多级单元薄膜晶体管存储器，其中，所述有源区的材料为IGZO。
上述的多级单元薄膜晶体管存储器，其中，所述源、漏电极的材料为Ti/Au或Mo。
本发明还提供了一种上述多级单元薄膜晶体管存储器的制备方法，其包含以下步骤：
步骤1、制备栅电极；
步骤2、在步骤1所得到的栅电极上采用原子层沉积方法(ALD方法)生长电荷阻挡层，电荷阻挡层的厚度为30～60nm，淀积温度为150～350℃；
步骤3、在步骤2所得到的电荷阻挡层上采用原子沉积或磁控溅射沉积方法(PVD方法)生长电荷俘获层，电荷俘获层的厚度为10～40nm；
步骤4、在步骤3所得到的电荷俘获层上旋涂一层正性光刻胶，然后进行光刻(曝光和显影)，定义出电荷俘获层的区域，接着采用湿法刻蚀工艺来刻蚀所定义的电荷俘获层区域以外的部分；
步骤5、在步骤4所得到的电荷俘获层和经刻蚀后暴露在外的电荷阻挡层上采用原子层沉积方法生长电荷隧穿层，电荷隧穿层的厚度为6～15nm，淀积温度为150～350℃；
步骤6、在步骤4所得到的电荷隧穿层上采用磁控溅射沉积方法生长一 层IGZO薄膜，作为器件的有源层，然后通过光刻工艺和湿法刻蚀工艺定义出有源区，形成器件的有源沟道，IGZO薄膜的厚度为30～60nm；
步骤7、在步骤6所得到的IGZO薄膜上旋涂一层负性光刻胶，通过光刻定义出源、漏电极图形区域；然后，采用磁控溅射沉积方法或者电子束热蒸发方法淀积一层金属薄膜作为源、漏电极材料，并通过剥离工艺去除源、漏电极图形区域以外的金属层，从而形成器件的源、漏电极，金属薄膜的厚度为50～200nm。
步骤8、对步骤7所得到的器件进行后续退火处理，退火气氛为氧气或空气，退火温度为150～350℃，退火时间为60s～2h；
上述的多级单元薄膜晶体管存储器的制备方法，其中，所述步骤1具体包括：将P型单晶硅片作为衬底，并通过标准清洗形成栅电极，或者，将玻璃或PI柔性基板作为衬底，并在其上沉积一层金属，通过光刻和刻蚀形成栅电极。
相对于现有技术，本发明具有以下有益效果：
(1)本发明所制备的薄膜晶体管存储器的电荷俘获层完全被电荷隧穿层包围，因而可以与外界完全隔离，进而防止了在退火过程中电荷俘获层的物理性质和化学组成发生改变，减少了存储在电荷俘获层中电荷的流失，提高了数据的保持特性和器件性能的稳定性；
(2)本发明采用金属氧化物半导体薄膜作为存储器的电荷俘获层，一个器件单元可以存储多个位(bit)，可以实现多级单元存储的功能，提高了存储密度；
(3)本发明所制备的薄膜晶体管存储器，可以在小于350℃的低温下制备，因此降低了器件制备的热预算，并且与薄膜晶体管(TFT)显示器所采用的材料、工艺温度、器件结构等一致，故其制备工艺与TFT显示器的制备工艺相兼容。此外由于IGZO薄膜具有较高的可见光透过率，使得本发明在未来SOP以及柔性透明电子器件等领域中具有广泛的应用前景。
附图的简要说明
图1为多级单元存储器结构的剖面示意图；
图2为基于ZnO电荷俘获层的多级单元存储器的编程特性的曲线图；
图3为基于ZnO电荷俘获层的多级单元存储器的擦除特性的曲线图；
图4为基于ZnO电荷俘获层的多级单元存储器的电荷保持特性的曲线图。
实现本发明的最佳方式
以下结合附图通过具体实施例对本发明作进一步的描述，这些实施例仅用于说明本发明，并不是对本发明保护范围的限制。
如图1所示，本发明提供了一种多级单元薄膜晶体管存储器，所述存储器的结构从下至上依次设置有：栅电极10、电荷阻挡层20、电荷俘获层30、电荷隧穿层40、有源区50以及源、漏电极60；
其中，所述电荷隧穿层40将所述电荷俘获层30完全包围，以使所述电荷俘获层30与外界完全隔离；所述电荷俘获层30的材料为ZnO、In 2O 3、Ga 2O 3、SnO 2、InSnO或IGZO中的任意一种。
上述的多级单元薄膜晶体管存储器，其中，所述栅电极10的材料为P型单晶硅片、玻璃或者PI柔性基板。
上述的多级单元薄膜晶体管存储器，其中，所述P型单晶硅片的电阻率为0.001～0.005Ω·cm。
上述的多级单元薄膜晶体管存储器，其中，所述电荷阻挡层20的材料为Al 2O 3、SiO 2、HfO 2或ZrO 2。
上述的多级单元薄膜晶体管存储器，其中，所述电荷隧穿层40的材料为Al 2O 3、SiO 2、HfO 2或ZrO 2。
上述的多级单元薄膜晶体管存储器，其中，所述有源区50的材料为IGZO。
上述的多级单元薄膜晶体管存储器，其中，所述源、漏电极60的材料为Ti/Au或Mo。
本发明还提供了一种上述多级单元薄膜晶体管存储器的制备方法，其包含以下步骤：
步骤1、制备栅电极10；
步骤2、在步骤1所得到的栅电极10上采用原子层沉积方法生长电荷阻挡层20，电荷阻挡层20的厚度为30～60nm，淀积温度为150～350℃；
步骤3、在步骤2所得到的电荷阻挡层20上采用原子沉积或磁控溅射沉 积方法生长电荷俘获层30，电荷俘获层30的厚度为10～40nm；
步骤4、在步骤3所得到的电荷俘获层30上旋涂一层正性光刻胶，然后进行光刻，定义出电荷俘获层30的区域，接着采用湿法刻蚀工艺来刻蚀所定义的电荷俘获层30区域以外的部分；
步骤5、在步骤4所得到的电荷俘获层30和经刻蚀后暴露在外的电荷阻挡层20上采用原子层沉积方法生长电荷隧穿层40，电荷隧穿层40的厚度为6～15nm，淀积温度为150～350℃；
步骤6、在步骤4所得到的电荷隧穿层40上采用磁控溅射沉积方法生长一层IGZO薄膜，作为器件的有源层，然后通过光刻工艺和湿法刻蚀工艺定义出有源区50，形成器件的有源沟道，IGZO薄膜的厚度为30～60nm；
步骤7、在步骤6所得到的IGZO薄膜上旋涂一层负性光刻胶，通过光刻定义出源、漏电极60图形区域(开口区)；然后，采用磁控溅射沉积方法或者电子束热蒸发方法淀积一层金属薄膜作为源、漏电极60材料，并通过剥离工艺去除源、漏电极60图形区域以外的金属层，从而形成器件的源、漏电极60，金属薄膜的厚度为50～200nm；
步骤8、对步骤7所得到的器件进行后续退火处理，退火气氛为氧气或空气，退火温度为150～350℃，退火时间为60s～2h。
上述的多级单元薄膜晶体管存储器的制备方法，其中，所述步骤1具体包括：将P型单晶硅片作为衬底，并通过标准清洗形成栅电极10，或者，将玻璃或PI柔性基板作为衬底，并在其上沉积一层金属，通过光刻和刻蚀形成栅电极10。
实施例一：
该实施例采用ZnO薄膜作为电荷俘获层30，具体制备流程如下：
步骤1，将电阻率为0.001～0.005Ω·cm的P型单晶硅片作为衬底，采用标准的RCA清洗工艺对衬底进行清洗，形成栅电极10；
步骤2，在栅电极10上采用ALD方法生长一层Al 2O 3薄膜作为电荷阻挡层20；淀积温度为150～350℃，优选300℃；薄膜厚度为30～60nm，优选35nm；
步骤3，在电荷阻挡层20上采用ALD方法或PVD方法生长一层ZnO薄膜，作为电荷俘获层30；淀积温度为150～350℃，优选200℃；薄膜厚度 为10～40nm，优选20nm；
步骤4，在电荷俘获层30上旋涂一层正性光刻胶，然后进行曝光和显影，定义出器件中电荷俘获层30的区域；接着采用稀释的盐酸溶液来刻蚀电荷俘获层30区域以外的部分；
步骤5，在电荷俘获层30以及经稀释的盐酸溶液刻蚀后暴露在外的电荷阻挡层20上面，采用ALD方法生长一层Al 2O 3薄膜，作为电荷隧穿层40；淀积温度为150～350℃，优选300℃；薄膜厚度为6～15nm，优选8nm；
步骤6，在电荷隧穿层40上采用PVD方法生长一层IGZO薄膜，作为有源层；IGZO靶材中原子比为In:Ga:Zn:O＝1:1:1:4，溅射功率为110W，工作压强为0.88Pa，通入淀积腔中的Ar和O 2的流量分别为50sccm和0sccm；然后通过光刻工艺和湿法刻蚀方法定义出有源区50，形成器件的有源沟道，IGZO薄膜厚度为30～60nm，优选40nm；
步骤7，在IGZO薄膜上旋涂一层负性光刻胶，利用光刻工艺定义出源、漏电极60图形区域(开口区)；采用磁控溅射沉积方法或者电子束蒸发方法地毯式淀积一层Ti/Au双层金属薄膜作为源、漏电极60材料，金属薄膜的厚度为50～200nm，优选100nm；然后采用剥离工艺去除源、漏电极60图形区域以外的金属层，从而形成器件的源、漏电极60；
步骤8，对器件进行后续退火处理，退火气氛为氧气(O 2)，退火温度为150～350℃，优选温度为250℃。退火时间为60～600s，优选300s。
图2为实施例一所制备存储器的编程特性，当编程电压固定在12V，编程时间从0.001ms增加到100ms时，编程窗口(编程后阈值电压与初始状态的阈值电压之差)从1.47V增加到2.75V；当固定编程时间为10ms时，编程电压从10V增加到16V时，编程窗口从1.89V增加到3.44V。这些数据表明该器件具有良好的编程特性。图3为实施例一所制备存储器的擦除特性，当擦除电压固定在-8V，擦除时间从1μs增加到70μs时，擦除窗口(擦除后阈值电压与初始状态的阈值电压之差)从2V增加到4.99V；当固定擦除时间为1μs时，擦除电压从-8V增加到-14V时，擦除窗口从2V增加到8.5V。这表明实施例一所制备的存储器具有非常高的电擦除效率。
通过改变栅极上偏压脉冲可以实现四种状态，即“00”、“11”、“10”和“01”态。这里器件初始状态定义为“00”；器件编程状态定义为“11”态(如： 15V/10ms)；较低负偏压脉冲(如：-8V/10μs)擦除状态定义为“10”；较高负偏压脉冲(如：-14V/1μs)擦除状态定义为“01”。图4显示了实施例一所制备的存储器不同存储状态的电荷保持特性。“11”态的操作条件是15V/10ms；“00”态的操作条件是器件初始态；“10”态和“01”态的操作条件分别是-8V/10μs和-14V/1μs。从图中可以看出，当保持时间达到105s后，器件的“11”态到“00”态存储窗口为2V；“00”态到“10”态存储窗口为1.1V；“10”态到“01”态存储窗口为1.6V。这使得存储器能正常区分“00”、“10”、“01”和“11”四种不同的存储态。
实施例二：
该实施例采用IGZO薄膜作为电荷俘获层30，具体制备流程如下：
步骤1，将电阻率为0.001～0.005Ω·cm的P型单晶硅片作为衬底，采用标准的RCA清洗工艺对衬底进行清洗，形成栅电极10；
步骤2，在栅电极10上采用ALD方法生长一层Al 2O 3薄膜作为电荷阻挡层20；淀积温度为150～350℃，优选300℃；薄膜厚度为30～60nm，优选35nm；
步骤3，在电荷阻挡层20上采用PVD方法生长一层IGZO薄膜，作为电荷俘获层30；IGZO靶材的原子比为In:Ga:Zn:O＝1:1:1:4，溅射功率为110W，工作压强为0.88Pa，通入淀积腔中的Ar和O 2的流量分别为50sccm和0sccm；IGZO薄膜的厚度为10～40nm，优选20nm；
步骤4，在电荷俘获层30上旋涂一层正性光刻胶，然后进行曝光和显影，定义出器件中电荷俘获层30的区域；接着采用稀释的盐酸溶液来刻蚀电荷俘获层30区域以外的部分；
步骤5，在电荷俘获层30以及经稀释的盐酸溶液刻蚀后暴露在外的电荷阻挡层20上面，采用ALD方法生长一层Al 2O 3薄膜，作为电荷隧穿层40；淀积温度为150～350℃，优选300℃；薄膜厚度为6～15nm，优选8nm；
步骤6，在电荷隧穿层40上采用PVD方法生长一层IGZO薄膜，作为有源层；IGZO靶材中原子比为In:Ga:Zn:O＝1:1:1:4，溅射功率为110W，工作压强为0.88Pa，通入淀积腔中的Ar和O 2的流量分别为50sccm和0sccm；然后通过光刻工艺和湿法刻蚀方法定义出有源区50，形成器件的有源沟道，IGZO薄膜厚度为30～60nm，优选40nm；
步骤7，在IGZO薄膜上旋涂一层负性光刻胶，利用光刻工艺定义出源、漏电极60图形区域(开口区)；采用磁控溅射沉积方法或者电子束蒸发方法地毯式淀积一层Mo金属薄膜作为源、漏电极60材料，金属薄膜的厚度为50～200nm，优选100nm；然后采用剥离工艺去除源、漏电极60图形区域以外的金属层，从而形成器件的源、漏电极60；
步骤8，对器件进行后续退火处理，退火气氛为空气，退火温度为150～350℃，优选温度为300℃；退火时间为0.5～2h，优选1h。
若对上述实施例二所制备的存储器进行不同电压编程可实现不同状态，例如，当栅极施加12V、10ms的脉冲，器件从初始状态变成编程状态，并且这两种状态之间可以互相转变(恢复到初始状态的电压脉冲条件为-12V、20ms)；当栅极上施加-15V、10ms的脉冲，器件从初始状态变成擦除状态，并且这两种状态之间也可以互相转变(恢复到初始状态的电压脉冲条件为11V、15ms)。表1列出了实施例二所制备的存储器不同状态的保持特性。随着保持时间从0秒延长到10 5s时，编程状态、初始状态、擦除状态的阈值电压(V th)分别从2.276V、-0.09V、-2.4V变为1.574V、-0.339V、-1.634V，体现出了较好的稳定性。
表1.基于IGZO电荷俘获层的多级单元存储器的保持特性
Figure PCTCN2017119769-appb-000001
综上所述，本发明所制备的薄膜晶体管存储器的电荷俘获层完全被电荷隧穿层包围，因此与外界完全隔离，防止了在工艺过程中电荷俘获层的物理性质和化学组成发生改变，减少了存储在电荷俘获层中电荷的流失，提高了数据的保持特性和器件性能的稳定性；本发明采用金属氧化物半导体薄膜作为存储器的电荷俘获层，可以实现多级单元存储，提高了存储密度；本发明所制备的薄膜晶体管存储器，可以在小于350℃的低温下制备，因此降低了器件制备的热预算，并且其制备工艺与薄膜晶体管工艺相兼容。此外由于IGZO薄膜具有较高的可见光透过率，使得本发明在未来SOP以及柔性透明 电子器件等领域中具有广泛的应用前景。
尽管本发明的内容已经通过上述优选实施例作了详细介绍，但应当认识到上述的描述不应被认为是对本发明的限制。在本领域技术人员阅读了上述内容后，对于本发明的多种修改和替代都将是显而易见的。因此，本发明的保护范围应由所附的权利要求来限定。

Claims (9)

  1. 一种多级单元薄膜晶体管存储器，其特征在于，所述存储器的结构从下至上依次设置有：栅电极、电荷阻挡层、电荷俘获层、电荷隧穿层、有源区以及源、漏电极；
    其中，所述电荷隧穿层将所述电荷俘获层完全包围，以使所述电荷俘获层与外界完全隔离；所述电荷俘获层的材料为ZnO、In 2O 3、Ga 2O 3、SnO 2、InSnO或IGZO中的任意一种。
  2. 如权利要求1所述的多级单元薄膜晶体管存储器，其特征在于，所述栅电极的材料为P型单晶硅片、玻璃或者PI柔性基板。
  3. 如权利要求2所述的多级单元薄膜晶体管存储器，其特征在于，所述P型单晶硅片的电阻率为0.001～0.005Ω·cm。
  4. 如权利要求1所述的多级单元薄膜晶体管存储器，其特征在于，所述电荷阻挡层的材料为Al 2O 3、SiO 2、HfO 2或ZrO 2。
  5. 如权利要求1所述的多级单元薄膜晶体管存储器，其特征在于，所述电荷隧穿层的材料为Al 2O 3、SiO 2、HfO 2或ZrO 2。
  6. 如权利要求1所述的多级单元薄膜晶体管存储器，其特征在于，所述有源区的材料为IGZO。
  7. 如权利要求1所述的多级单元薄膜晶体管存储器，其特征在于，所述源、漏电极的材料为Ti/Au或Mo。
  8. 一种如权利要求1-7中任意一项所述的多级单元薄膜晶体管存储器的制备方法，其特征在于，包含以下步骤：
    步骤1、制备栅电极；
    步骤2、在步骤1所得到的栅电极上采用原子层沉积方法生长电荷阻挡层，电荷阻挡层的厚度为30～60nm，淀积温度为150～350℃；
    步骤3、在步骤2所得到的电荷阻挡层上采用原子沉积或磁控溅射沉积方法生长电荷俘获层，电荷俘获层的厚度为10～40nm；
    步骤4、在步骤3所得到的电荷俘获层上旋涂一层正性光刻胶，然后进行光刻，定义出电荷俘获层的区域，接着采用湿法刻蚀工艺来刻蚀所定义 的电荷俘获层区域以外的部分；
    步骤5、在步骤4所得到的电荷俘获层和经刻蚀后暴露在外的电荷阻挡层上采用原子层沉积方法生长电荷隧穿层，电荷隧穿层的厚度为6～15nm，淀积温度为150～350℃；
    步骤6、在步骤4所得到的电荷隧穿层上采用磁控溅射沉积方法生长一层IGZO薄膜，作为器件的有源层，然后通过光刻工艺和湿法刻蚀工艺定义出有源区，形成器件的有源沟道，IGZO薄膜的厚度为30～60nm；
    步骤7、在步骤6所得到的IGZO薄膜上旋涂一层负性光刻胶，通过光刻定义出源、漏电极图形区域；然后，采用磁控溅射沉积方法或者电子束热蒸发方法淀积一层金属薄膜作为源、漏电极材料，并通过剥离工艺去除源、漏电极图形区域以外的金属层，从而形成器件的源、漏电极，金属薄膜的厚度为50～200nm；
    步骤8、对步骤7所得到的器件进行后续退火处理，退火气氛为氧气或空气，退火温度为150～350℃，退火时间为60s～2h。
  9. 如权利要求8所述的多级单元薄膜晶体管存储器的制备方法，其特征在于，所述步骤1具体包括：将P型单晶硅片作为衬底，并通过标准清洗形成栅电极，或者，将玻璃或PI柔性基板作为衬底，并在其上沉积一层金属，通过光刻和刻蚀形成栅电极。
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