WO2019006891A1 - 荧光芯片及其制造方法 - Google Patents

荧光芯片及其制造方法 Download PDF

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Publication number
WO2019006891A1
WO2019006891A1 PCT/CN2017/103426 CN2017103426W WO2019006891A1 WO 2019006891 A1 WO2019006891 A1 WO 2019006891A1 CN 2017103426 W CN2017103426 W CN 2017103426W WO 2019006891 A1 WO2019006891 A1 WO 2019006891A1
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WIPO (PCT)
Prior art keywords
reflective layer
light
layer
reflective
fluorescent
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PCT/CN2017/103426
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English (en)
French (fr)
Inventor
李乾
许颜正
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Shenzhen Appotronics Corp Ltd
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Appotronics Corp Ltd
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Publication of WO2019006891A1 publication Critical patent/WO2019006891A1/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/025—Constructional details of solid state lasers, e.g. housings or mountings

Definitions

  • the invention relates to a fluorescent chip and a method for manufacturing the fluorescent chip, and belongs to the field of chip manufacturing.
  • the laser display technology needs to use all-solid-state lasers of red, green and blue as the light source. Due to the high color purity of the laser, the chromaticity triangle formed on the chromaticity diagram is the largest according to the principle of three primary colors synthesis, so the laser The displayed image has a larger color gamut, higher contrast and brightness than the existing color TV, and the color is more vivid, reflecting the true color of nature, and has great application prospects in the field of home theater and large screen display.
  • Laser display technology is the fourth generation display technology after black and white display, color display and digital display.
  • laser display technology represents the future development trend and mainstream direction of display technology, and is the focus of competition in the future display field.
  • the method of laser display is generally by using an LCD, LCOS, or DMD chip as a light modulator.
  • the DMD chip is patented by Texas Instruments, and the technology of LCD modulation is in the hands of Japanese companies.
  • the above companies have formed a technology monopoly in the field of laser display, which not only increases the new entry into the industry. Enterprise costs also limit the development and promotion of new display systems, resulting in technical stagnation caused by monopoly.
  • the present invention provides a fluorescent chip for emitting light according to external illumination, the device comprising:
  • the accommodating cavity, the second reflective layer constitutes a side wall of the accommodating cavity, and each of the accommodating cavities is provided with an illuminating unit, and an upper surface of each of the illuminating units is not higher than a plane of the opening of the accommodating cavity.
  • the present invention also provides a projection device, including:
  • An excitation light source and the foregoing fluorescent chip, the light source being located on a side of the second reflective layer adjacent to the fluorescent chip for emitting excitation light, the fluorescent chip receiving the excitation light and generating laser light of different wavelengths The laser light is emitted from the same side of the light incident surface of the excitation light source of the fluorescent chip.
  • the fluorescent pixel chip of the glass structure of the present invention is of a reflective design, and the surface of each of the light-emitting units except the upper surface is blocked by the reflective material. Therefore, the illumination of each light-emitting unit does not affect the adjacent light-emitting unit, and color mixing can be avoided. And so on.
  • the present invention also provides a method of manufacturing a fluorescent chip, the fluorescent chip receiving excitation light emitted from an excitation light source and generating a corresponding laser light, the method comprising:
  • first reflective layer Forming a first reflective layer on the substrate; and forming a second reflective layer on the first reflective layer, the second reflective layer being disposed on the first reflective layer and enclosing a plurality of two-dimensionally arranged accommodation a cavity, the second reflective layer constitutes a sidewall of the receiving cavity, and each of the receiving cavity is provided with a light emitting unit, and an upper surface of each of the light emitting cells is not higher than a plane of the opening of the receiving cavity.
  • the first reflective layer is directly brushed and sintered on the substrate, the structure is compact and easy to prepare in a large area, and the second reflective layer is brushed and sintered on the first reflective layer.
  • the adhesion property with the first reflective layer and the substrate is strong, and the whole processing can be performed to improve the processing efficiency.
  • Fig. 1 shows a specific structure of a fluorescent pixel chip 100 of a first embodiment of the present invention.
  • Figure 2 shows a top view of a fluorescent pixel chip.
  • Figure 3 shows a schematic diagram of another fluorescent pixel chip in accordance with the present invention.
  • FIG. 4 is a schematic explanatory diagram of a method of manufacturing a light-emitting unit of a fluorescent pixel chip of the present invention.
  • FIG. 5 is an explanatory diagram of a method of manufacturing a fluorescent pixel chip according to an aspect of the present invention.
  • FIG. 6 is an explanatory diagram of a method of manufacturing a fluorescent pixel chip according to another aspect of the present invention.
  • the design of the new light source system requires the development of a fluorescent chip that emits light according to an external light source, which includes a plurality of point light sources, and the core components of the device are A dot-matrix type fluorescent material consisting of a plurality of independent light-emitting units.
  • an external light source which includes a plurality of point light sources
  • the core components of the device are A dot-matrix type fluorescent material consisting of a plurality of independent light-emitting units.
  • This dot-matrix-type fluorescent material can be used as a fluorescent pixel chip in promising applications in new lighting and display systems.
  • Fig. 1 shows a specific structure of a fluorescent pixel chip 100 of a first embodiment of the present invention.
  • FIG. 2 shows a top view of the fluorescent pixel chip 100.
  • the fluorescent pixel chip 100 can receive excitation light incident from directly above it.
  • a blue laser light may be selected as the excitation light
  • a preferred blue laser light may be a laser light having a wavelength of 473 nm, for example, obtained from a solid laser or a semiconductor laser.
  • the fluorescent pixel chip 100 includes a substrate 101, a first reflective layer 102 on the substrate 101, and a second reflective layer 103 stacked on the first reflective layer 102.
  • the substrate 101 may be one of a high thermal conductivity ceramic or single crystal substrate such as aluminum nitride, aluminum oxide, silicon carbide, silicon nitride or sapphire, and is preferably an aluminum nitride ceramic substrate.
  • the thickness of the substrate 101 may preferably be 0.35 to 2 mm.
  • the length and width of the substrate 101 can be set as needed.
  • a substrate having a size of 10 ⁇ 10 mm is taken as an example.
  • the substrate may be a ceramic substrate capable of withstanding a temperature higher than 900 degrees, such as an opaque material such as aluminum nitride.
  • the second reflective layer 103 is disposed on the first reflective layer 102.
  • a plurality of openings arranged in two dimensions are disposed, and each of the openings is provided with a light emitting unit 104, and each of the light emitting units 104 is disposed.
  • the surface is not higher than the upper surface of the second reflective layer 103.
  • the second reflective layer 103 is disposed on the first reflective layer and is surrounded by a plurality of two-dimensionally arranged receiving cavities, and the second reflective layer constitutes a sidewall of the receiving cavity, each of An illuminating unit is disposed in the accommodating cavity, and an upper surface of each of the illuminating units is not higher than a plane of the opening of the accommodating cavity
  • the upper surface of the light-emitting unit 104 is exposed, so that the laser light emitted from above can be received without being shielded, and the light-receiving efficiency is improved.
  • the thickness of the light emitting unit 104 is less than or equal to the thickness of the second reflective layer 103 in the periphery thereof, and each of the light emitting units 104 is embedded in the opening on the second reflective layer 103, and the upper surface thereof is substantially flush with the upper surface of the peripheral second reflective layer 103. .
  • the first reflective layer 102 includes a reflective material at least in the vicinity of a surface adjacent to the second reflective layer 103, and the reflective material is also included in the second reflective layer 103.
  • the reflective material contained in the second reflective layer 103 is distributed at least around the light emitting unit 104.
  • the reflective material can be highly reflective particles. Specifically, it may be an ultra-white monomer powder particle such as alumina, aluminum nitride, magnesium oxide, boron nitride, zinc oxide, zirconium oxide or barium sulfate having a particle size ranging from 50 nm to 5 ⁇ m, or a plurality of particles. A mixture of the above powder particles.
  • Phosphor particles are included in the light emitting unit 104.
  • the plurality of light emitting units 104 are arranged in a two-dimensional matrix among the second reflective layers 103, and each four adjacent light emitting units 104 correspond to one pixel.
  • one of the four light-emitting units 104 is made to be a light-emitting unit 104 that scatters or reflects the blue laser light.
  • the anti-scattering material may be coated on the upper surface of one of the light-emitting units 104, or the light-emitting unit 104 including the reflective material may be used to scatter or reflect the blue laser light, and the remaining three Among the plurality of light-emitting units 104, at least two of the light-emitting units 104 respectively contain corresponding phosphor particles, so that green and red fluorescence can be respectively emitted under the excitation of the blue laser light. Thus, pixels capable of emitting light of three primary colors of red, green, and blue are formed.
  • the light-emitting unit 104 may also be mixed with yellow phosphor particles while containing a part of the reflective material inside, so that the yellow light and the blue light are mixed in a certain ratio to exhibit a white light combination.
  • This structure can bypass the method of using a high-speed rotating color wheel in a conventional laser display technology to cause three primary colors.
  • each of the light-emitting units 104 including the phosphor particles is an independent light-emitting body, and when it is excited by the incident laser light, the light emitted by the light-emitting unit is first.
  • the reflective layer 102 and the surrounding second reflective layer 103 are reflected, so that the light emitted by the two adjacent light-emitting units 104 does not interfere with each other.
  • one or more or all of the light emitting units 104 may be illuminated by modulating the incident light to obtain the desired excited light.
  • the fluorescent pixel chip 100 of the present embodiment is a reflective fluorescent pixel chip, and the excitation light is incident from directly above the chip. After the light-emitting unit 104 is excited, the emitted visible light is reflected by the first reflective layer 102 and is emitted directly upward.
  • the back surface of the substrate 101 i.e., the lower side of the substrate 101 in Fig. 1
  • an opaque heat sink or heat sink such as a metal heat sink or the like
  • the periphery of the light emitting unit 104 is covered by the second reflective layer 103, the bottom of which is covered by the first reflective layer 102, and the first reflective layer 102 cannot transmit light, and the second reflective layer 103 having the reflective material cannot The light is transmitted, and the bottom of the first reflective layer 102 is also connected with the heat-conductive substrate 101, and the light-transmissive heat sink is also connected. Therefore, the design and structure cannot be used for the transmissive fluorescent pixels. chip.
  • the surface of each of the light-emitting units 104 other than the upper surface is covered by the layer containing the reflective material as described above, so that the light emitted by the light-emitting unit is removed from the upper surface.
  • the outer five faces are limited and reflected, and the reflected light eventually exits from the upper surface.
  • the periphery and the lower surface of each of the light-emitting units 104 are blocked by the reflective material. Therefore, the light emission of each of the light-emitting units 104 does not affect the light emission of the adjacent light-emitting units 104, and the occurrence of color mixing or the like can be avoided.
  • the light emitting unit 104 is described as a regular cube, but those skilled in the art should understand that the shape of the light emitting unit is not limited to a cube, but may be other regular shapes, and may even be an irregular shape.
  • FIG. 3 shows an example of another fluorescent pixel chip 200 in accordance with the present invention.
  • the relative positions of the substrate 201, the first reflective layer 202, and the second reflective layer 203 are the same as those of the fluorescent pixel chip 100 of the first embodiment.
  • the light emitting unit 204 is embedded in the second reflective layer 203, the upper surface of which is exposed from the upper surface of the second reflective layer 203, except that the upper surface thereof is lower than the upper surface of the second reflective layer 203.
  • the second reflective layer 203 can better isolate the fluorescent or reflected light of each color emitted by each of the light emitting units 204, thereby further preventing the occurrence of color mixing.
  • FIG. 4 is a schematic explanatory diagram of a method of manufacturing the light-emitting units 104 and 204 of the present invention.
  • the ceramic substrate 301 is prepared in step 1, and the ceramic substrate 301 may be one of substrates such as alumina, zirconia, or aluminum nitride.
  • the surface of the ceramic substrate 301 is flat and smooth, and can withstand a high temperature of 1000 ° C or higher.
  • step 2 is performed to prepare a carrier release layer 302 on the above ceramic substrate 301.
  • the slurry for preparing the release layer 302 is applied to the ceramic substrate 301 to a thickness of between 50 and 300 um. Then, it was baked in a high temperature environment at a temperature of 120 ° C for about 1 hour to obtain a supported release layer 301.
  • the above-described slurry for preparing the release layer 302 can be prepared by thoroughly mixing inorganic powder particles with an organic vehicle, for example, by ball milling to sufficiently mix the inorganic powder particles with an organic vehicle.
  • the inorganic powder particles may be selected from inorganic powders which do not decompose at a high temperature and have a particle diameter of less than 5 ⁇ m.
  • the inorganic powder is selected from white or nearly white powder particles of alumina, titanium oxide, zirconium oxide, boron nitride, aluminum nitride, or the like, and phosphor particles may be selected as needed.
  • alumina particles having a particle diameter of between 200 nm and 3 ⁇ m are selected.
  • step 3 is performed to prepare an ultra-thin luminescent glass layer 303.
  • yellow phosphor particles, glass frit, and an organic vehicle are thoroughly mixed by ball milling to obtain a green slurry.
  • the above raw slurry is brushed over the load-bearing release layer 302 to a thickness of about 50-300 um. After drying at 120 ° C for about one hour, it was sintered at a temperature of 800-950 ° C for 1 hour.
  • yellow phosphor herein may also be replaced with a phosphor that emits light of a color such as green or red, as needed.
  • the ultra-thin luminescent glass layer 303 can be detached from the substrate, that is, the sintered release layer 3031 shown in the step 4 is obtained.
  • the back side there may be a little white particle bond on the back side, which can be removed by a simple grinding or ultrasonic vibration process to obtain an ultra-thin luminescent glass that can be processed.
  • step 5 is performed to perform a cutting process on the release layer 3031 to form the light-emitting units 104 and 204.
  • a small square piece having a size of 1 x 1 mm is cut on the release layer 3031 by a laser cutting process.
  • these square sheets can also be cut into other sizes according to actual needs or processing techniques.
  • step 6 the cut small square piece, that is, the light-emitting unit 104, is bonded to the smooth smooth sapphire or other smooth mother board 3001 in a certain order using a solution such as PVB.
  • the mother board can be It is the same or different ceramic substrate as the ceramic substrate used in the first step.
  • the distance between the small square pieces enables the reflective material contained in the second reflective layer 103 filled between the light emitting units 104 to provide sufficient reflectance.
  • a certain space is reserved at both ends of the mother board 3001 for subsequent alignment.
  • the purpose of using the PVB solution is to subsequently remove it at a high temperature of 600 degrees or more to separate the mother board 3001 from the small square piece. This will be referred to in the following.
  • the light-emitting unit 104 bonded to the mother board 3001 can be obtained.
  • the mother board 3001 to which the light emitting unit 104 is bonded is referred to as a structure 1001.
  • FIG. 5 is an explanatory diagram of a method of manufacturing the fluorescent pixel chip 100 of the present invention.
  • the substrate 101 is prepared.
  • the substrate 101 may be one of a high thermal conductivity ceramic or single crystal substrate such as aluminum nitride, aluminum oxide, silicon carbide, silicon nitride or sapphire, and is preferably an aluminum nitride ceramic substrate.
  • the thickness of the substrate 101 can be set according to the specific use requirements of the sample, and is preferably 0.35-2 mm.
  • the length and width of the substrate 101 can be set as needed, and here, a substrate having a size of 10 ⁇ 10 mm is taken as an example.
  • a first reflective layer 102 is prepared on the substrate 101.
  • the highly reflective particles including the reflective material, the glass frit 1 and the organic vehicle are weighed in proportion, and thoroughly mixed by ball milling to prepare a slurry 1.
  • the above slurry was applied to the substrate 101.
  • the substrate 101 coated with the slurry is placed in an oven, and the slurry is quickly dried at a temperature of 80 to 150 ° C for about 10-45 minutes. After drying, it is placed in a sintering furnace for sintering.
  • the sintering temperature can be selected from 700 to 1200 ° C according to the actual situation, and can be sintered in a normal pressure, a vacuum or a protective atmosphere, and the holding time varies from 10 min to 3 h.
  • the substrate 101 on which the first reflective layer 102 is formed as shown in step b of Fig. 5 can be obtained.
  • the thickness of the first reflective layer 102 is preferably 50-200 um.
  • the highly reflective particles may be ultra-white monomer powder particles such as alumina, aluminum nitride, magnesium oxide, boron nitride, zinc oxide, zirconium oxide, barium sulfate, etc. having a particle size ranging from 50 nm to 5 ⁇ m, or A mixture of a plurality of or more powder particles.
  • the organic carrier may be one of silicone oil, ethanol, ethylene glycol, xylene, ethyl cellulose, terpineol, butyl carbitol, PVA, PVB, PAA, PEG of each system such as phenyl or methyl. Multiple hybrids.
  • the glass powder may be one or more of silicate glass, lead silicate glass, aluminoborosilicate glass, aluminate glass, soda lime glass, and quartz glass having different softening points.
  • a light-emitting preliminary layer 1003 is prepared on the substrate 101 on which the first reflective layer 102 is formed prepared in the step b.
  • the high-reflection particles, the glass frit, and the organic vehicle are weighed in a certain ratio, mixed into a slurry 2, and applied onto the first reflective layer 102 to obtain a light-emitting preliminary layer 1003.
  • the melting point of the glass frit 2 is lower than that of the glass frit 1, but higher than 600 ° C, or higher than the volatilization temperature of the binder PVB when the light-emitting unit 104 is bonded to the mother substrate 3001 as used in the foregoing.
  • the content of the glass powder 2 in the slurry 2 is also lower than the content of the glass powder 1 in the slurry 1, the content of the high-reflecting particles in the slurry 2 is higher than the content of the high-reflecting particles in the slurry 1, and the viscosity of the slurry 2 is also Higher than the viscosity of the slurry one.
  • the illuminating preliminary layer 1003 has a certain leveling and thixotropic property, and its thickness ranges from 50 to 200 um, and its thickness is equal to the thickness of the small square sheet prepared in the foregoing, that is, the thickness of the light emitting unit 104, or larger than the thickness of the light emitting unit 104.
  • the structure 1001 to which the light emitting unit 104 is bonded is prepared.
  • how to obtain the structure 1001 has been described in detail, and will not be described again here.
  • step e the structure 1001 is placed on the substrate 101 on which the light-emitting preliminary layer 1003 and the first reflective layer 102 are formed in step c, in such a manner that the light-emitting unit 104 is downward, so that the light-emitting unit 104 and the light-emitting unit are illuminated.
  • the preliminary layer 1003 is opposite.
  • step f a slow vertical downward pressure is applied to the structure 1001, and the small square, that is, the light emitting unit 104, is slowly pressed into the 1003 layer until the light emitting unit 104 is entirely embedded in the light emitting preliminary layer 1003.
  • the structure 1002 in the figure shown in the step f was placed in an oven at 80-150 ° C to discharge the organic carrier of 1003 slowly.
  • the structure 1002 is placed in a muffle furnace at a high temperature of 500-600 ° C to remove the PVB bonded between the bonding mother substrate 3001 and the light-emitting unit 104.
  • the mother board 3001 can be removed. Since the glass frit 2 in the 1003 layer has not reached the melting point at this time, it does not adhere to the mother board 3001.
  • step g the structure in which the mother substrate 3001 is removed is continuously sintered in a muffle furnace, and the sintering temperature is the sintering temperature of the glass frit 2 in the 1003 layer, so that the light-emitting preliminary layer 1003 finally becomes the second reflective layer 103, Fluorescent pixel chip 100.
  • each of the light-emitting units 104 serves as an independent light-emitting point. When it is excited by the incident laser light, it emits light which is reflected by the bottom 102 layer and the surrounding 103 layers; two adjacent light-emitting lights The light emitted by unit 104 does not interfere with each other. At the time of application, the incident light may be modulated to illuminate one or more or all of the light-emitting units 104 to obtain the desired excited light.
  • a higher platform 302 is placed on each side of the substrate 101.
  • the platforms 302 on both sides can limit the motherboard 3001.
  • the platform 302 does not have to exist because the illuminating preliminary layer 1003 itself has a certain viscosity, and when the relatively large-area mother board 3001 moves downward and hits the surface of 1003, it also encounters the surface of the 1003 as a viscous substance.
  • the applied resistance when this resistance is transmitted to the sensor, prevents the motherboard 3001 from continuing to move downward.
  • the first reflective layer 102 under the light-emitting preliminary layer 1003 is a sintered layer, and the light-emitting unit 104 can not go down when it contacts the interface of the 1003 and 102 layers. motion. Therefore, at this time, under the common limitation of the platform 302 and the first reflective layer 102, the light emitting unit 104 is completely immersed in the 1003 layer, as shown by the structure in the step g in FIG. 5, their upper surfaces are flush with each other. .
  • steps i and ii are substantially identical to steps a and b in FIG. 5, and therefore, details are not described herein again.
  • step iii the light-emitting unit 104 is directly bonded to the sintered first reflective layer 102.
  • the method of preparing the light-emitting unit 104 can still refer to steps 1 to 5 in the description of FIG. 4 above.
  • the cut light-emitting unit 104 is bonded to the first reflective layer 102 in a certain order using a solution such as PVB. on.
  • the bonded light-emitting units 104 can also be arranged in three primary colors, that is, the three-color light-emitting units 104 are respectively prepared in such a manner that the light-emitting units 104 of three different colors correspond to one pixel.
  • three kinds of light-emitting units 104 of red, green, and blue are arranged as one pixel, or four kinds of light-emitting units of red, green, blue, and white are arranged as one pixel or the like.
  • the PVB solution was used in order to be able to remove it at a temperature higher than 600 degrees.
  • step iv the high-reflection particles, the glass frit, and the organic carrier are weighed in a certain ratio, and then mixed into a slurry 2, which is applied onto the first reflective layer 102 to which the light-emitting unit 104 is bonded, so as to cover 102. And 104, a light-emitting preparation layer 1033 is obtained.
  • the glass powder used in the slurry 2 is the same as the slurry 1, the melting point is higher than 600 ° C, or higher than the volatilization temperature of the PVB used, and the content of the glass powder 1 in the slurry 2 is also lower than the glass powder in the slurry 1
  • the content of one, the content of the highly reflective particles in the slurry two is higher than the content of the highly reflective particles in the slurry 1, and the viscosity of the slurry two is lower than the viscosity of the slurry 1.
  • the illuminating preparation layer 1033 After the illuminating preparation layer 1033 is applied, it is vacuum-discharged and repeatedly brushed, and slowly dried in an oven at 80-120 ° C to remove the organic vehicle. Then, the 1033 layer covered by the upper surface of the light emitting unit 104 is removed by a grinding or scraping removal method to ensure that the light emitting unit 104 is exposed from the light emitting preliminary layer 1033 layer.
  • the structure 1004 obtained in the step iv of Fig. 6 was placed in a muffle furnace, and the temperature was slowly raised to 600 ° C for 2 to 10 hours to completely eliminate the PVB. Then, the temperature is raised to the sintering temperature of the glass frit 1 and the temperature is kept for 10 min to 2 h to obtain a fluorescent pixel chip 100 as shown in FIG. 2 in plan view.
  • the light-emitting unit 104 it is necessary to fix the light-emitting unit 104 in the final sintering process, so that the glass powder in the slurry one and the slurry two are of the same type, and can enter the sintered state at the sintering temperature.
  • the content of glass in the slurry 2 is small, and under the influence of the reflective particles, the fluidity at the time of sintering is low, and the arrangement of the light-emitting units 104 is not broken.
  • a glass system is employed. Solving the problem of thermal expansion coefficient matching of the second reflective layer, the first reflective layer and the substrate, and the problem of bonding performance.
  • the second reflective layer and the first reflective layer both pass through the liquid phase during the sintering process and are bonded to each other during the cooling process to provide adhesion.
  • Both the second reflective layer and the first reflective layer contract during cooling, which is not significantly greater than the shrinkage of the substrate due to temperature degradation, and the resulting force is not greater than the adhesion or adhesion between the layers.
  • the fluorescent pixel chip 200 of the present invention can also be manufactured by the above method.
  • the illuminating preparation layer 1033 is applied, it is slowly dried in an oven at 80-120 ° C by vacuum degassing and repeated brushing to remove the organic vehicle. Then, the light-emitting preliminary layer 1033 above the light-emitting unit 104 is removed by laser etching to ensure that the light-emitting unit 104 is exposed from the 1033 layer.
  • the other steps are the same as those described above for preparing the fluorescent pixel 100.
  • the fluorescent pixel chip of the glass structure of the present invention is of a reflective design, and the peculiar manner is the structure of the substrate + the first reflective layer + the second reflective layer.
  • the substrate is a ceramic substrate capable of withstanding a temperature higher than 900 degrees, such as aluminum nitride.
  • the first reflective layer is directly brushed and sintered on the substrate, and the structure is compact and easy to prepare in a large area, and the second reflective layer is a brush. It is coated and sintered on the first reflective layer, and has strong adhesion to the first reflective layer and the substrate, and can be used for monolithic processing.
  • the invention can be constructed as follows:
  • a fluorescent chip that receives excitation light emitted from an excitation light source and generates a corresponding laser light, comprising: a substrate; a first reflective layer, the first reflective layer is on the substrate; and a second reflective layer, The second reflective layer is disposed on the first reflective layer.
  • a plurality of openings arranged in two dimensions are disposed, and each of the openings is provided with a light emitting unit, and an upper surface of each of the light emitting units is not higher than the first The upper surface of the two reflective layers.
  • each of the adjacent ones of the plurality of light-emitting units arranged in a two-dimensional matrix corresponds to one pixel point, in each corresponding Among the pixels, one of the light emitting units is coated with a scattering material or a reflective material, and the three light emitting units are coated with a fluorescent material.
  • the excitation light source emits the blue laser light
  • the fluorescence emitted from the fluorescent chip includes at least red fluorescence and green fluorescence.
  • a projection apparatus comprising: an excitation light source; and the fluorescent chip according to any one of (1) to (6), wherein the light source is located on a side of the second reflective layer adjacent to the fluorescent chip for emitting excitation light,
  • the fluorescent chip receives the excitation light and generates laser light of different wavelengths, and the laser light is emitted from the same side of the light incident surface of the excitation light source of the fluorescent chip.
  • a method of manufacturing a fluorescent chip the fluorescent chip receiving excitation light emitted from an excitation light source and generating a corresponding laser light, the method comprising: forming a first reflective layer on the substrate; and forming a second on the first reflective layer In the reflective layer, in the second reflective layer, a plurality of openings arranged in two dimensions are disposed, and each of the openings is provided with a light emitting unit, and an upper surface of each of the light emitting units is not higher than an upper surface of the second reflective layer.
  • the forming the first reflective layer on the substrate comprises: weighing the reflective material, the first glass frit, and the organic carrier in a predetermined ratio and then mixing into a first slurry; Painting the first slurry onto the substrate; and curing the first slurry applied to the substrate.
  • the forming the second reflective layer on the first reflective layer comprises: forming a preliminary layer on the first reflective layer, the reflective layer being included in the preliminary layer; forming a plurality of light emitting units, And bonding each of the light emitting units to the mother board; pressing the mother board to which the light emitting unit is bonded downward according to the manner in which the light emitting unit faces the preliminary layer, so that each light emitting unit is squeezed into the preliminary layer; and removing the mother The plate is such that the upper surface of the light emitting unit is exposed from the preliminary layer.
  • the forming the second reflective layer on the first reflective layer comprises: forming a plurality of light emitting units, and bonding the respective light emitting units to the first reflective layer; acquiring a preliminary slurry
  • the preliminary slurry contains a reflective material, and the preliminary slurry is applied to the first reflective layer and the plurality of light emitting units such that the upper surface of the light emitting unit is exposed from the preliminary layer formed by the preliminary slurry; and the preliminary layer is cured.
  • the forming the second reflective layer on the first reflective layer comprises: forming a plurality of light emitting units, and bonding the respective light emitting units to the first reflective layer; acquiring a preliminary slurry And preparing a slurry comprising a reflective material, applying the preliminary slurry to the first reflective layer and the plurality of light emitting units to form a preliminary layer; curing the preliminary layer; and etching the preliminary layer such that the upper surface of the light emitting unit is prepared The layer is exposed.

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Abstract

一种荧光芯片及其制造方法，该荧光芯片包括：基板（101）；第一反射层（102），第一反射层（102）位于基板（101）上；以及第二反射层（103），第二反射层（103）设置于第一反射层（102）上且围设成多个二维排列的容纳腔，第二反射层（103）构成所述容纳腔的侧壁，每一容纳腔内设置有一发光单元（104），每一发光单元（104）的上表面不高于所述容纳腔的开口所在的平面。该荧光芯片中的各个发光单元（104）的除上表面之外的表面都被反射材料遮挡，因此各发光单元（104）的发光均不会影响相邻发光单元（104），可避免混色等情况的出现。

Description

荧光芯片及其制造方法 技术领域
本发明涉及一种荧光芯片以及荧光芯片的制造方法，属于芯片制造领域。
 背景技术
伴随激光显示技术的发展，利用蓝光激光作为光源来照射荧光材料以激发其发出可见光的技术，在逐渐受到重视的同时，也得到了迅猛的发展。除了激光显示领域的应用之外，用蓝光激光激发荧光的技术在激光照明领域也有着极为广阔的应用前景。
一般来说，激光显示技术需采用红、绿、蓝三基色的全固态激光器作为光源，由于激光的高色纯度，按三基色合成原理在色度图上形成的色度三角形面积最大，因而激光显示的图像有着比现有彩色电视更大的色域、更高的对比度和亮度，颜色更鲜艳，能反映自然界的真实色彩，在家庭影院和大屏幕显示领域具有巨大的应用前景。
激光显示技术是继黑白显示、彩色显示、数字显示之后的第四代显示技术。在众多不断发展的显示技术中，激光显示技术代表显示技术未来发展的趋势和主流方向，是未来显示领域竞争的焦点。
 技术问题
就目前的激光显示技术领域来说，核心技术大部分被国外的科技公司所掌握。激光显示的方法一般是通过利用LCD、LCOS、或是DMD芯片作为光调制器。然而，作为核心部件DMD芯片是美国德州仪器公司的专利，利用LCD调制的技术掌握在日本企业的手中，并且上述企业在激光显示领域中均已形成了技术垄断，这不仅增加了新进入行业的企业成本，还限制了新型显示系统的开发与推广，形成因垄断而造成的技术停滞。
 技术解决方案
鉴于上述问题，在一些激光照明和显示领域的应用环境中，旨在打破DMD及LCD的技术垄断，需要设计新的光源系统。
因此，本发明提出一种荧光芯片，用于根据外界的照射而发光，该装置包括：
基板；第一反射层，所述第一反射层位于所述基板上；以及第二反射层，所述第二反射层设置于所述第一反射层上且围设成多个二维排列的容纳腔，所述第二反射层构成所述容纳腔的侧壁，每一容纳腔内设置有一发光单元，每一所述发光单元的上表面不高于所述容纳腔的开口所在的平面。
此外，本发明还提出一种投影设备，包括：
激发光源；以及前述荧光芯片，所述光源位于靠近所述荧光芯片的所述第二反射层的一侧，用于发出激发光，所述荧光芯片接收所述激发光并产生不同波长的受激光，所述受激光从所述荧光芯片的所述激发光源的光入射面的同侧出射。
本发明的玻璃结构的荧光像素芯片为反射式设计，各个发光单元的除上表面之外的表面都被反射材料遮挡，因此，各发光单元的发光均不会影响相邻发光单元，可避免混色等情况的出现。
另外，本发明还提出一种制造荧光芯片的方法，所述荧光芯片接收激发光源出射的激发光并产生相应的受激光，该方法包括：
在基板上形成第一反射层；以及在所述第一反射层上形成第二反射层，所述第二反射层设置于所述第一反射层上且围设成多个二维排列的容纳腔，所述第二反射层构成所述容纳腔的侧壁，每一容纳腔内设置有一发光单元，每一所述发光单元的上表面不高于所述容纳腔的开口所在的平面。
 有益效果
采用本发明的制造荧光芯片的方法，第一反射层被直接刷涂并烧结于基板之上，结构紧致且易于大面积制备，第二反射层为刷涂并烧结于第一反射层之上，与第一反射层和基板的附着性能强，可整块加工，提高加工效率。
下面结合附图和具体实施例，对本发明的技术方案进行详细说明。
 附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，以下将对实施例描述中所需要使用的附图作简单地介绍，以下描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员而言，在不付出创造性劳动的前提下，还可以根据这些附图所示实施例得到其它的实施例及其附图。
图1示出了本发明的第一实施例的荧光像素芯片100的具体结构。
图2示出了荧光像素芯片的俯视图。
图3示出了根据本发明的另外一种荧光像素芯片的示意图。
图4是本发明的荧光像素芯片的发光单元的制造方法的简要说明图。
图5是根据本发明的一个方面的制造荧光像素芯片的方法的说明图。
图6是根据本发明的另一方面的制造荧光像素芯片的方法的说明图。
 本发明的最佳实施方式
以下将结合附图对本发明各实施例的技术方案进行清楚、完整的描述，显然，所描述的实施例仅仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所得到的所有其它实施例，都属于本发明所保护的范围。
在一些激光照明和显示领域的应用环境中，为了打破DMD和LCD的技术垄断，新型光源系统的设计需要研发一种根据外界光源发光的荧光芯片，其包括多个点光源，装置的核心部件是一种点阵像素型的荧光发光材料，这种材料由多个独立的发光单元组成，当激光照射到其中一个单元的发光材料时，其发光或出光过程均不会对相邻单元造成影响。这种点阵像素型的荧光发光材料，可作为一种荧光像素芯片，在新型照明和显示系统中获得很有前景的应用。
以下，将按顺序说明实施本发明的荧光芯片的具体实施例。
荧光像素芯片
实施例一
图1示出了本发明的第一实施例的荧光像素芯片100的具体结构。图2示出了荧光像素芯片100的俯视图。在图1中，荧光像素芯片100可接收从其正上方射入的激发光。在这里，可以选择蓝色激光作为激发光，优选的蓝色激光可以是波长为473nm，例如从固体激光器或半导体激光器获得的激光。
如图1所示，荧光像素芯片100包括基板101、位于基板101上的第一反射层102以及层叠在第一反射层102之上的第二反射层103。
基板101可以是氮化铝、氧化铝、碳化硅、氮化硅、蓝宝石等高热导率的陶瓷或单晶基板之一，优选为氮化铝陶瓷基板。基板101的厚度可以优选为0.35-2mm。基板101长度和宽度可以根据需要来设定，本实施例以10×10mm大小的基板为例。
这里，基板可以是能够承受900度以上高温的陶瓷基板，比如，氮化铝之类的不透明的材料。
第二反射层103设置于第一反射层102上，在第二反射层103中，设置有多个呈二维排列的开口，每一开口内设置有发光单元104，每一发光单元104的上表面不高于第二反射层103的上表面。具体而言，所述第二反射层103设置于所述第一反射层上且围设成多个二维排列的容纳腔，所述第二反射层构成所述容纳腔的侧壁，每一容纳腔内设置有一发光单元，每一所述发光单元的上表面不高于所述容纳腔的开口所在的平面
也就是说，发光单元104的上表面裸露，从而可以免遮挡地接收上方所发出的激光，提高受光效率。发光单元104的厚度小于等于其周边第二反射层103的厚度，每一发光单元104嵌入第二反射层103上的开口内，其上表面与周边的第二反射层103的上表面大致平齐。
第一反射层102至少在与第二反射层103靠近的表面附近包含反射材料，并且第二反射层103中也包含反射材料。第二反射层103中包含的反射材料至少分布在发光单元104的周围。
反射材料可以是高反射颗粒。具体地，可以是粒径大小从50纳米到5微米范围内的氧化铝、氮化铝、氧化镁、氮化硼、氧化锌、氧化锆、硫酸钡等超白单体粉末颗粒，或者多种以上粉末颗粒的混合体。
发光单元104中包括荧光粉颗粒。例如，将多个发光单元104在第二反射层103当中排列成二维矩阵，并且使每四个相邻的发光单元104对应一个像素。在使用蓝色激光作为激发光源的情况下，使四个发光单元104之中的一个发光单元104成为对蓝色激光进行散射或反射的发光单元104。具体地，可在一个发光单元104的上表面涂覆反（散）射材料，也可以使用内部包含反射材料的发光单元104，使该发光单元104对蓝色激光进行散射或反射，其余的三个发光单元104之中，至少有两个发光单元104分别含有相应的荧光粉颗粒，从而能够在蓝色激光的激发下分别发出绿色及红色的荧光。这样，便形成了能够发出红、绿、蓝三基色的光的像素。此外，发光单元104也可混有黄色荧光粉颗粒，同时其内部包含一部分反射材料，使得黄光和蓝光按照一定比例混合，呈现出白色的合光。这种结构可以绕开传统的激光显示技术中使用高速旋转的色轮来引起三基色的方法。
在本实施例的荧光像素芯片100中，包含有荧光粉颗粒的每一个发光单元104都是一个独立的发光体，当它被射入的激光激发时，它发出的光会被底部的第一反射层102以及四周的第二反射层103反射，因此两个相邻的发光单元104所发出的光不会相互干涉。在应用时，可以通过调制入射光照射某一个或多个或全部的发光单元104，以获取所需要的被激发光。
本实施例的荧光像素芯片100为反射式荧光像素芯片，激发光由芯片的正上方射入，发光单元104受到激发后，发出的可见光被第一反射层102所反射，向正上方发出。基板101的背面（即，图1中基板101的下方）可以连接有不透明的热沉或散热器，例如金属散热件等等，可以将发光过程中产生的热量由芯片的底部导出到外部。相较于透射式芯片，大大提升了散热性能，并且可以承受更高功率密度的激光照射以及发出更亮的光。
另外，发光单元104的四周被第二反射层103所包覆，其底部被第一反射层102所包覆，而第一反射层102无法透光，具有反射材料的第二反射层103也无法透光，且第一反射层102底部还连接有导热的基板101，也无法透光，基板101还可连接不透光的热沉，因此，这种设计和结构无法用于透射式的荧光像素芯片。
同时，这种反射式的荧光像素芯片100，其各个发光单元的104的除上表面之外的表面均如上所述被含有反射材料的层所包覆，因此其发出的光在除上表面之外的五个面上受限并被反射，被反射的光最终均从上表面出射。这样，各个发光单元104的周围以及下表面等都被反射材料所隔断，因此，各发光单元104的发光均不会影响相邻发光单元104的发光，可避免混色等情况的出现。
注意，这里，将发光单元104描述为规则的立方体，但本领域技术人员应理解，发光单元的形状并不限于立方体，还可以是其他的规则形状，甚至可以是不规则的形状。
实施例二
图3示出了根据本发明的另外一种荧光像素芯片200的示例。
在图3中，基板201、第一反射层202以及第二反射层203的相对位置等与实施例一的荧光像素芯片100的相同，在荧光像素芯片200的第二反射层203中，发光单元204嵌入第二反射层203中，其上表面从第二反射层203的上表面露出，所不同的是，其上表面低于第二反射层203的上表面。
由于第二反射层203的上表面高于发光单元204的上表面，因此，第二反射层203能够更好地隔离各发光单元204出射的各色荧光或反射光，进一步避免混色的发生。
发光单元的制造方法
以下，将参照图4来详细说明本发明的荧光像素芯片的发光单元104及204的制备方法。
图4是本发明的发光单元104及204的制造方法的简要说明图。
首先，执行步骤1准备陶瓷基板301，该陶瓷基板301可以是氧化铝、氧化锆、氮化铝等基板之中的一种。陶瓷基板301的表面平整、光滑，可耐1000℃以上的高温。
接着，执行步骤2，即，在上述陶瓷基板301上制备承载脱模层302。具体地，将用于制备承载脱模层302的浆料于陶瓷基板301上涂刷成厚度在50-300um之间。然后，在温度为120℃的高温环境下烘干约1小时，得到承载脱模层301。
上述用于制备承载脱模层302的浆料可通过充分混合无机粉末颗粒与有机载体制备，例如通过球磨将无机粉末颗粒与有机载体进行充分混合。无机粉末颗粒可选择高温下不分解、粒径小于5um的无机类粉末。
优选地，无机粉末选择白色或近似白色的氧化铝、氧化钛、氧化锆、氮化硼、氮化铝等粉末颗粒，还可以根据需要选择荧光粉颗粒。
更进一步优选的，选择粒径在200nm-3um之间的氧化铝颗粒。
然后，执行步骤3，制备超薄发光玻璃层303。具体地，将例如黄色的荧光粉颗粒、玻璃粉、以及有机载体经球磨充分混合后，得到生浆料。接着，将上述生浆料在承载脱模层302之上刷涂成厚度约50-300um。经过120℃烘干约一小时后，在800-950℃温度中烧结1小时。
注意，本领域技术人员应当理解，此处的黄色荧光粉也可以根据需要换成可发出绿色或红色等颜色的光的荧光粉。
烧结后，超薄发光玻璃层303可从基板上脱落，即，获得步骤4中所示的烧结后的脱模层3031。但其背面可能存在少许的白色颗粒粘接物，可经简单打磨或超声震荡工艺，将上述粘接物去除，从而得到可供加工的超薄发光玻璃。
接下来，执行步骤5，对脱模层3031进行切割加工，以形成发光单元104及204。优选地，采用激光切割工艺，在脱模层3031上切割出大小为1x1mm的小方片。当然，本领域技术人员应理解，根据实际需求或者加工工艺的不同，这些方片也可以切割成其他尺寸。
最后，执行步骤6，将切割下来的小方片，也就是发光单元104，按照一定顺序，使用PVB等溶液粘接在平整光滑的蓝宝石或其他光滑的母板3001之上，这里，母板可以是与第一步骤中所使用的陶瓷基板相同或不同的陶瓷基板。小方片之间的距离使得在发光单元104之间填充的第二反射层103之中含有的反射材料能够提供足够的反射率。母板3001的两端要预留一定的空间，以便后续的对齐，使用PVB溶液的目的是为了后续能够在600度以上的高温将其除去，使母板3001与小方片分离。这将在后述内容中涉及。
通过以上步骤，可以获得的粘结在母板3001上的发光单元104。为了方便说明。以下，将粘接有发光单元104的母板3001称作结构1001。
荧光像素芯片的制造方法
示例一
下面，将结合图5来详细说明制造本发明的荧光像素芯片100的方法。
图5是本发明的制造荧光像素芯片100的方法的说明图。
首先，在步骤a中,准备基板101。基板101可以是氮化铝、氧化铝、碳化硅、氮化硅、蓝宝石等高热导率的陶瓷或单晶基板之一，优选为氮化铝陶瓷基板。基板101的厚度可以根据样品的具体使用需求而设定，优选为0.35-2mm。基板101长度和宽度可以根据需要来设定，此处以10×10mm大小的基板为例。
在步骤b中，在基板101上制备第一反射层102。将包括反射材料的高反射颗粒、玻璃粉一以及有机载体按比例称量，经球磨充分混合后，制成浆料一。将上述浆料一涂刷在基板101上。然后，将涂覆有浆料的基板101放入烤箱，在80-150℃的温度环境下对浆料进行快速烘干，时间约10-45min。烘干后，将其放入烧结炉进行烧结。烧结温度可以根据实际情况选择700-1200℃，可以在常压、真空或保护气氛中烧结，保温时间从10min到3h不等。然后，便能够得到图5中步骤b所示的，其上形成有第一反射层102的基板101。第一反射层102的厚度优选在50-200um。
这里，高反射颗粒可以是粒径大小从50纳米到5微米范围内的氧化铝、氮化铝、氧化镁、氮化硼、氧化锌、氧化锆、硫酸钡等超白单体粉末颗粒，或者多种以上粉末颗粒的混合体。有机载体可以是苯基、甲基等各个体系的硅油、乙醇、乙二醇、二甲苯、乙基纤维素、萜品醇、丁基卡必醇、PVA、PVB、PAA、PEG中的一个或者多个混合体。玻璃粉一可以是不同软化点的硅酸盐玻璃、铅硅酸盐玻璃、铝硼硅酸盐玻璃、铝酸盐玻璃、钠钙玻璃、石英玻璃中的一种或多种。
接下来，在步骤c中，在步骤b中制备的形成有第一反射层102的基板101上制备发光预备层1003。将高反射颗粒、玻璃粉二、有机载体按一定比例称量后混合成浆料二，刷涂于第一反射层102之上，得到发光预备层1003。其中，玻璃粉二的熔点低于玻璃粉一，但高于600℃，或高于前文中所采用的将发光单元104粘接到母板3001时的粘结剂PVB的挥发温度。
浆料二中的玻璃粉二的含量也低于浆料一中的玻璃粉一的含量，浆料二中高反射颗粒的含量要高于浆料一中高反射颗粒的含量，浆料二的粘度也高于浆料一的粘度。发光预备层1003具备一定的流平和触变性能，其厚度范围在50-200um，且其厚度与前文中制备的小方片，即，发光单元104的厚度一致，或大于发光单元104的厚度。
在步骤d中，准备粘接有发光单元104的结构1001。在上文中，已经详细说明了如何获得结构1001，在这里不再赘述。
接着，在步骤e，按照发光单元104向下的方式，将结构1001置于步骤c中得到的其上形成有发光预备层1003与第一反射层102的基板101上，使得发光单元104与发光预备层1003相对。
在步骤f中，对结构1001施加缓慢的垂直向下的压力，将小方片，也就是发光单元104缓慢压入1003层之中，直到发光单元104全部嵌入到发光预备层1003之中。
然后，放置一段时间，直到1003层充分流平之后，将步骤f所示的图中的结构1002放入80-150℃的烤箱排胶，使1003的有机载体缓慢蒸发。排胶后，将结构1002放到马弗炉中500-600℃高温排胶，可以除去粘接母板3001与发光单元104之间粘接的PVB。排除PVB之后，可去除母板3001。由于此时1003层中的玻璃粉二尚未达到熔点，不会与母板3001粘接。
所述发光预备层1003经过烧结后，形成第二反射层。
然后，在步骤g中，将去除了母板3001的结构在马弗炉中继续烧结，烧结温度为1003层中玻璃粉二的烧结温度，使得发光预备层1003最终成为第二反射层103，得到荧光像素芯片100。
在荧光像素芯片100中，各个发光单元104作为独立的发光点，当它被射入的激光激发时，它发出的光会被底部的102层以及四周的103层反射；两个相邻的发光单元104所发出的光不会相互干涉。在应用时可以调制入射光照射某一个或者多个或者全部的发光单元104，获得所需要的被激发光。
这里，优选地，在步骤e与步骤f中，在基板101的两侧各放置一个较高的平台302。
对结构1001施加缓慢的垂直向下压力，将发光玻璃方片203缓慢压入1003层之中时，如图5步骤f所示，两侧的平台302能够对母板3001起到限位作用。当然，平台302并非必须存在，因为发光预备层1003本身具备一定的粘性，当面积相对较大的母板3001向下运动并碰到1003的表面时，也会遇到作为粘性物质的1003的表面所施加的阻力，当这种阻力传递给传感器时，可阻止使母板3001继续向下运动。
在发光单元104与发光预备层1003的厚度相当的情况下，发光预备层1003之下的第一反射层102为已烧结层，发光单元104接触到1003与102层的界面时便无法再往下运动。因此，这时，在平台302和第一反射层102的共同限位作用下，发光单元104完全浸入1003层之中，如图5中步骤g中的结构所示，它们的上表面相互齐平。
示例二
以下结合图6来详细说明制造本发明的荧光像素芯片100的另一种方法。
从图6可以看出，步骤i、ii与图5中的步骤a、b基本一致，因此，这里不再赘述。
所不同的是，图6中，在步骤iii中，直接将发光单元104粘接在烧结后的第一反射层102上。
这里，制备发光单元104的方法仍然可以参照上面图4的说明中的步骤1至步骤5。但是，制备发光单元104之后，与图4中的步骤6所说明的不同，在本例中，将切割下来的发光单元104按照一定的顺序，使用PVB等溶液粘接在第一反射层102之上。当然，所粘接的发光单元104也可以按照三基色来布置，即，分别制备三种颜色的发光单元104，按照每三个不同颜色的发光单元104对应一个像素的方式来布置。比如，将红、绿、蓝三种发光单元104布置成一个像素，或将红、绿、蓝、以及白这四种发光单元布置成一个像素等。
与上一示例相似地，在作为发光单元104的众多小方片之间留出一定的间距，使得反射效果能够得到满足。使用PVB溶液是为了能够在600度以上高温将其除去。
接着，执行步骤iv，将高反射颗粒、玻璃粉一、有机载体按一定比例称量后混合成浆料二，刷涂于粘接有发光单元104的第一反射层102上，使其覆盖102和104，得到发光预备层1033。其中浆料二使用的玻璃粉一与浆料一相同，熔点高于600℃，或高于所采用PVB的挥发温度，浆料二中玻璃粉一的含量也低于浆料一中的玻璃粉一的含量，浆料二中的高反射颗粒的含量高于浆料一中的高反射颗粒的含量，并且浆料二的粘度低于浆料一的粘度。
刷涂发光预备层1033后，经过真空排泡及反复刷涂，在80-120℃烤箱中缓慢烘干，排除有机载体。然后采用磨去或者刮去的去除方式将发光单元104上表面覆盖的1033层清除，以确保发光单元104从发光预备层1033层露出。
将图6中步骤iv中得到的结构1004放入马弗炉中，缓慢升温至600℃，保温2-10h，以彻底排除PVB。接着，继续升温至玻璃粉一的烧结温度，保温10min-2h，获得其俯视图如图2所示的荧光像素芯片100。
注意，在本示例中，需要在最后烧结的过程中对发光单元104进行固定，所以浆料一和浆料二中的玻璃粉类型相同，在烧结温度下都能进入烧结状态。其中，浆料二中玻璃含量较少，在反射粒子的影响下，烧结时流动性较低，不会破坏发光单元104的排列。
在制备该荧光像素芯片的结构时，采用了玻璃体系的方式。解决第二反射层、第一反射层和基板的热膨胀系数匹配问题，以及粘接性能问题。第二反射层和第一反射层在烧结过程中都有经过液相，在冷却过程中相互粘接，以提供附着力。在冷却过程中第二反射层和第一反射层都会产生收缩，此收缩不明显大于基板因温度降低而产生的收缩，产生的力也不大于各层之间的附着力或粘接力。
此外，还可以通过上述方法制造本发明的荧光像素芯片200。
具体地，在上述的步骤iv中，刷涂发光预备层1033后，经过真空排泡及反复刷涂，在80-120℃烤箱中缓慢烘干，排除有机载体。然后采用采用激光刻蚀的方式，将发光单元104上方的发光预备层1033除去，以确保发光单元104从1033层露出。其他步骤与上述制备荧光像素100的步骤相同。
总结
本发明的玻璃结构的荧光像素芯片为反射式设计，其特有的方式为基板+第一反射层+第二反射层的结构。其中，基板是能够承受900度以上高温的陶瓷基板，如氮化铝，第一反射层是直接刷涂并烧结于基板之上的，结构紧致且易于大面积制备，第二反射层为刷涂并烧结于第一反射层之上，与第一反射层和基板的的附着性能强，可以用于整块加工。
可按如下方式构造本发明：
（1）一种荧光芯片，其接收激发光源出射的激发光并产生相应的受激光，其特征在于，包括：基板；第一反射层，第一反射层位于基板上；以及第二反射层，第二反射层设置于第一反射层上，在第二反射层中，设置有多个呈二维排列的开口，每一开口内设置有发光单元，每一发光单元的上表面不高于第二反射层的上表面。
（2）根据（1）的荧光芯片，第二反射层的反射材料的含量大于第一反射层的反射材料的含量。
（3）根据（1）或（2）的荧光芯片，一部分发光单元包括散射材料或反射材料。
（4）根据（1）-（3）中任一项的荧光芯片，多二维排列是二维矩阵式排列。
（5）根据（1）-（4）中任一项的荧光芯片，呈二维矩阵式排列的多个发光单元之中，每相邻四个发光单元对应一个像素点，在每一对应的像素点中，一个发光单元涂有散射材料或反射材料，三个发光单元涂有荧光材料。
（6）根据（5）的荧光芯片，激发光源出射蓝色激光，并且荧光芯片发出的荧光至少包括红色荧光以及绿色荧光。
（7）一种投影设备，包括：激发光源；以及根据（1）-（6）中任一项的荧光芯片，光源位于靠近荧光芯片的第二反射层的一侧，用于发出激发光，荧光芯片接收激发光并产生不同波长的受激光，受激光从荧光芯片的激发光源的光入射面的同侧出射。
（8）一种制造荧光芯片的方法，荧光芯片接收激发光源出射的激发光并产生相应的受激光，该方法包括：在基板上形成第一反射层；以及在第一反射层上形成第二反射层，在第二反射层中，设置有多个呈二维排列的开口，每一开口内设置有发光单元，每一发光单元的上表面不高于第二反射层的上表面。
（9）根据（8）的制造荧光芯片的方法，第二反射层的反射材料的含量大于第一反射层的反射材料的含量。
（10）根据（9）的制造荧光芯片的方法，在基板上形成第一反射层包括：将反射材料、第一玻璃粉、以及有机载体按预设比例称量后混合成第一浆料；将第一浆料涂刷到基板上；以及固化涂刷到基板上的第一浆料。
（11）根据（10）的制造荧光芯片的方法，在第一反射层上形成第二反射层包括：在第一反射层上形成预备层，预备层中包含反射材料；形成多个发光单元，并将各个发光单元粘接到母板上；按照发光单元面向预备层的方式，将粘接有发光单元的母板向下按压，使得每一发光单元被挤入到预备层中；以及除去母板，使得发光单元的上表面从预备层露出。
（12）根据（11）的制造荧光芯片的方法，在第一反射层上形成预备层包括：将反射材料、第二玻璃粉、以及有机载体按预设比例称量后混合成第二浆料；以及将第二浆料刷涂于第一反射层上，其中，第二玻璃粉的熔点低于第一玻璃粉的熔点。
（13）根据（10）的制造荧光芯片的方法，在第一反射层上形成第二反射层包括：形成多个发光单元，并将各个发光单元粘接到第一反射层上；获取预备浆料，预备浆料中包含反射材料，并将预备浆料应用到第一反射层及多个发光单元上，使得发光单元的上表面从预备浆料形成的预备层露出；以及固化预备层。
（14）根据（10）的制造荧光芯片的方法，在第一反射层上形成第二反射层包括：形成多个发光单元，并将各个发光单元粘接到第一反射层上；获取预备浆料，预备浆料中包含反射材料，并将预备浆料应用到第一反射层及多个发光单元，以形成预备层；固化预备层；以及刻蚀预备层，使得发光单元的上表面从预备层露出。
（15）根据（11）、（13）或（14）的制造荧光芯片的方法，形成多个发光单元包括：在陶瓷基板上形成发光玻璃层，发光玻璃层包括荧光材料、反射材料、及散射材料之中的一者或多者；以及切割发光玻璃层。
对于本领域的普通技术人员来讲，在本发明原理的基础上，显然还可以在不偏离本发明的精神的情况下想到除了上述实施方式以外的其它替换方式。

Claims (14)

1、一种荧光芯片，其接收激发光源出射的激发光并产生相应的受激光，其特征在于，包括：
基板；
第一反射层，所述第一反射层位于所述基板上；以及
第二反射层，所述第二反射层设置于所述第一反射层上且围设成多个二维排列的容纳腔，所述第二反射层构成所述容纳腔的侧壁，每一容纳腔内设置有一发光单元，每一所述发光单元的上表面不高于所述容纳腔的开口所在的平面。
2、根据权利要求1所述的荧光芯片，其特征在于，
所述第二反射层的反射材料的含量大于所述第一反射层的所述反射材料的含量。
3、根据权利要求2所述的荧光芯片，其特征在于，
一部分所述发光单元包括散射材料或反射材料。
4、根据权利要求3所述的荧光芯片，其特征在于，
所述二维排列是二维矩阵式排列。
5、根据权利要求4所述的荧光芯片，其特征在于，
呈所述二维矩阵式排列的多个所述发光单元之中，每相邻四个所述发光单元对应一个像素点，在每一对应的所述像素点中，一个发光单元涂有散射材料或反射材料，三个发光单元涂有荧光材料。
6、根据权利要求5所述的荧光芯片，其特征在于，
所述激发光源出射蓝色激光，并且所述荧光芯片发出的荧光至少包括红色荧光以及绿色荧光。
7、一种投影设备，其特征在于，包括：激发光源；以及
根据权利要求1至6之中任一项所述的荧光芯片，所述光源位于靠近所述荧光芯片的所述第二反射层的一侧，用于发出激发光，所述荧光芯片接收所述激发光并产生不同波长的受激光，所述受激光从所述荧光芯片的所述激发光源的光入射面的同侧出射。
8、一种制造荧光芯片的方法，所述荧光芯片接收激发光源出射的激发光并产生相应的受激光，其特征在于，所述方法包括：
在基板上形成第一反射层；以及
在所述第一反射层上形成第二反射层，在所述第二反射层中围设成多个二维排列的容纳腔，所述第二反射层构成所述容纳腔的侧壁，每一容纳腔内设置有一发光单元，每一所述发光单元的上表面不高于所述容纳腔的开口所在的平面。
9、根据权利要求8所述的制造荧光芯片的方法，其特征在于，其中，所述第二反射层的反射材料的含量大于所述第一反射层的所述反射材料的含量。
10、根据权利要求9所述的制造荧光芯片的方法，其特征在于，
在所述基板上形成所述第一反射层包括：
将所述反射材料、第一玻璃粉、以及有机载体按预设比例称量后混合成第一浆料；
将所述第一浆料涂刷到所述基板上；以及
固化涂刷到所述基板上的所述第一浆料以得到第一反射层。
11、根据权利要求10所述的制造荧光芯片的方法，其特征在于，在所述第一反射层上形成预备层包括：
将所述反射材料、第二玻璃粉、以及所述有机载体按预设比例称量后混合成第二浆料；以及
将所述第二浆料刷涂于所述第一反射层上，
其中，所述第二玻璃粉的熔点低于所述第一玻璃粉的熔点。
12、根据权利要求10所述的制造荧光芯片的方法，其特征在于，在所述第一反射层上形成所述第二反射层包括：
形成多个所述发光单元，并将各个所述发光单元粘接到所述第一反射层上；
获取预备浆料，所述预备浆料中包含所述反射材料，并将所述预备浆料应用到所述第一反射层及多个所述发光单元上，使得所述发光单元的上表面从所述预备浆料形成的预备层露出；以及
固化所述预备层以获得第二反射层。
13、根据权利要求10所述的制造荧光芯片的方法，其特征在于，
在所述第一反射层上形成所述第二反射层包括：
形成多个所述发光单元，并将各个所述发光单元粘接到所述第一反射层上；
获取预备浆料，所述预备浆料中包含所述反射材料，并将所述预备浆料应用到所述第一反射层及多个所述发光单元，以形成预备层；
固化所述预备层；以及
刻蚀所述预备层，使得所述发光单元的上表面从所述预备层露出。
14、根据权利要求11、12或13所述的制造荧光芯片的方法，其特征在于，其中，
形成多个所述发光单元包括：
在陶瓷基板上形成发光玻璃层，所述发光玻璃层包括荧光材料、反射材料、及散射材料之中的一者或多者；以及
切割所述发光玻璃层。
PCT/CN2017/103426 2017-07-05 2017-09-26 荧光芯片及其制造方法 Ceased WO2019006891A1 (zh)

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