WO2019006891A1

WO2019006891A1 - Fluorescent chip and manufacturing method therefor

Info

Publication number: WO2019006891A1
Application number: PCT/CN2017/103426
Authority: WO
Inventors: 李乾; 许颜正
Original assignee: 深圳市光峰光电技术有限公司
Priority date: 2017-07-05
Filing date: 2017-09-26
Publication date: 2019-01-10
Also published as: CN109217100A; CN109217100B

Abstract

A fluorescent chip and a manufacturing method therefor. The fluorescent chip comprises: a substrate (101); a first reflective layer (102) disposed on the substrate (101); and a second reflective layer (103) disposed on the first reflective layer (102) and enclosing a plurality of planar-arranged accommodating cavities, the second reflective layer (103) constituting sidewalls of the accommodating cavities, each of the accommodating cavities being internally provided with a light emitting unit (104), and the upper surface of each of the light emitting units (104) being not higher than the plane on which openings of the accommodating cavities are located. The surfaces of the light emitting units (104) in the fluorescent chip other than the upper surface are all blocked by a reflective material, such that illumination of each of the light emitting units (104) does not affect an adjacent light emitting unit (104), avoiding occurrence of color mixture and similar phenomena.

Description

Fluorescent chip and method of manufacturing same

Technical field

The invention relates to a fluorescent chip and a method for manufacturing the fluorescent chip, and belongs to the field of chip manufacturing.

Background technique

With the development of laser display technology, the use of blue laser as a light source to illuminate fluorescent materials to stimulate their emission of visible light has been gradually gaining attention while being rapidly developed. In addition to the application in the field of laser display, the technology of exciting fluorescence with blue laser has a very broad application prospect in the field of laser illumination.

In general, the laser display technology needs to use all-solid-state lasers of red, green and blue as the light source. Due to the high color purity of the laser, the chromaticity triangle formed on the chromaticity diagram is the largest according to the principle of three primary colors synthesis, so the laser The displayed image has a larger color gamut, higher contrast and brightness than the existing color TV, and the color is more vivid, reflecting the true color of nature, and has great application prospects in the field of home theater and large screen display.

Laser display technology is the fourth generation display technology after black and white display, color display and digital display. Among the many evolving display technologies, laser display technology represents the future development trend and mainstream direction of display technology, and is the focus of competition in the future display field.

technical problem

In the current field of laser display technology, most of the core technologies are mastered by foreign technology companies. The method of laser display is generally by using an LCD, LCOS, or DMD chip as a light modulator. However, as the core component, the DMD chip is patented by Texas Instruments, and the technology of LCD modulation is in the hands of Japanese companies. The above companies have formed a technology monopoly in the field of laser display, which not only increases the new entry into the industry. Enterprise costs also limit the development and promotion of new display systems, resulting in technical stagnation caused by monopoly.

Technical solution

In view of the above problems, in some application environments of laser illumination and display, in order to break the technical monopoly of DMD and LCD, it is necessary to design a new light source system.

Accordingly, the present invention provides a fluorescent chip for emitting light according to external illumination, the device comprising:

a substrate; a first reflective layer on the substrate; and a second reflective layer disposed on the first reflective layer and surrounded by a plurality of two-dimensional arrays The accommodating cavity, the second reflective layer constitutes a side wall of the accommodating cavity, and each of the accommodating cavities is provided with an illuminating unit, and an upper surface of each of the illuminating units is not higher than a plane of the opening of the accommodating cavity.

In addition, the present invention also provides a projection device, including:

An excitation light source; and the foregoing fluorescent chip, the light source being located on a side of the second reflective layer adjacent to the fluorescent chip for emitting excitation light, the fluorescent chip receiving the excitation light and generating laser light of different wavelengths The laser light is emitted from the same side of the light incident surface of the excitation light source of the fluorescent chip.

The fluorescent pixel chip of the glass structure of the present invention is of a reflective design, and the surface of each of the light-emitting units except the upper surface is blocked by the reflective material. Therefore, the illumination of each light-emitting unit does not affect the adjacent light-emitting unit, and color mixing can be avoided. And so on.

In addition, the present invention also provides a method of manufacturing a fluorescent chip, the fluorescent chip receiving excitation light emitted from an excitation light source and generating a corresponding laser light, the method comprising:

Forming a first reflective layer on the substrate; and forming a second reflective layer on the first reflective layer, the second reflective layer being disposed on the first reflective layer and enclosing a plurality of two-dimensionally arranged accommodation a cavity, the second reflective layer constitutes a sidewall of the receiving cavity, and each of the receiving cavity is provided with a light emitting unit, and an upper surface of each of the light emitting cells is not higher than a plane of the opening of the receiving cavity.

Beneficial effect

According to the method for manufacturing a fluorescent chip of the present invention, the first reflective layer is directly brushed and sintered on the substrate, the structure is compact and easy to prepare in a large area, and the second reflective layer is brushed and sintered on the first reflective layer. The adhesion property with the first reflective layer and the substrate is strong, and the whole processing can be performed to improve the processing efficiency.

The technical solutions of the present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.

DRAWINGS

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments will be briefly described below, and the drawings in the following description are only some embodiments of the present invention. Other embodiments and their drawings may be derived from the embodiments shown in the drawings without departing from the scope of the invention.

Fig. 1 shows a specific structure of a fluorescent pixel chip 100 of a first embodiment of the present invention.

Figure 2 shows a top view of a fluorescent pixel chip.

Figure 3 shows a schematic diagram of another fluorescent pixel chip in accordance with the present invention.

4 is a schematic explanatory diagram of a method of manufacturing a light-emitting unit of a fluorescent pixel chip of the present invention.

FIG. 5 is an explanatory diagram of a method of manufacturing a fluorescent pixel chip according to an aspect of the present invention.

6 is an explanatory diagram of a method of manufacturing a fluorescent pixel chip according to another aspect of the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION

The technical solutions of the various embodiments of the present invention are clearly and completely described in the following with reference to the accompanying drawings. It is obvious that the described embodiments are only a part of the embodiments of the present invention, but not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative efforts are within the scope of the present invention.

In some applications in the field of laser illumination and display, in order to break the technical monopoly of DMD and LCD, the design of the new light source system requires the development of a fluorescent chip that emits light according to an external light source, which includes a plurality of point light sources, and the core components of the device are A dot-matrix type fluorescent material consisting of a plurality of independent light-emitting units. When a laser is irradiated to a light-emitting material of one of the cells, the light-emitting or light-emitting process does not affect adjacent cells. This dot-matrix-type fluorescent material can be used as a fluorescent pixel chip in promising applications in new lighting and display systems.

Hereinafter, specific embodiments of the fluorescent chip embodying the present invention will be described in order.

Fluorescent pixel chip

Embodiment 1

Fig. 1 shows a specific structure of a fluorescent pixel chip 100 of a first embodiment of the present invention. FIG. 2 shows a top view of the fluorescent pixel chip 100. In FIG. 1, the fluorescent pixel chip 100 can receive excitation light incident from directly above it. Here, a blue laser light may be selected as the excitation light, and a preferred blue laser light may be a laser light having a wavelength of 473 nm, for example, obtained from a solid laser or a semiconductor laser.

As shown in FIG. 1, the fluorescent pixel chip 100 includes a substrate 101, a first reflective layer 102 on the substrate 101, and a second reflective layer 103 stacked on the first reflective layer 102.

The substrate 101 may be one of a high thermal conductivity ceramic or single crystal substrate such as aluminum nitride, aluminum oxide, silicon carbide, silicon nitride or sapphire, and is preferably an aluminum nitride ceramic substrate. The thickness of the substrate 101 may preferably be 0.35 to 2 mm. The length and width of the substrate 101 can be set as needed. In this embodiment, a substrate having a size of 10 × 10 mm is taken as an example.

Here, the substrate may be a ceramic substrate capable of withstanding a temperature higher than 900 degrees, such as an opaque material such as aluminum nitride.

The second reflective layer 103 is disposed on the first reflective layer 102. In the second reflective layer 103, a plurality of openings arranged in two dimensions are disposed, and each of the openings is provided with a light emitting unit 104, and each of the light emitting units 104 is disposed. The surface is not higher than the upper surface of the second reflective layer 103. Specifically, the second reflective layer 103 is disposed on the first reflective layer and is surrounded by a plurality of two-dimensionally arranged receiving cavities, and the second reflective layer constitutes a sidewall of the receiving cavity, each of An illuminating unit is disposed in the accommodating cavity, and an upper surface of each of the illuminating units is not higher than a plane of the opening of the accommodating cavity

That is to say, the upper surface of the light-emitting unit 104 is exposed, so that the laser light emitted from above can be received without being shielded, and the light-receiving efficiency is improved. The thickness of the light emitting unit 104 is less than or equal to the thickness of the second reflective layer 103 in the periphery thereof, and each of the light emitting units 104 is embedded in the opening on the second reflective layer 103, and the upper surface thereof is substantially flush with the upper surface of the peripheral second reflective layer 103. .

The first reflective layer 102 includes a reflective material at least in the vicinity of a surface adjacent to the second reflective layer 103, and the reflective material is also included in the second reflective layer 103. The reflective material contained in the second reflective layer 103 is distributed at least around the light emitting unit 104.

The reflective material can be highly reflective particles. Specifically, it may be an ultra-white monomer powder particle such as alumina, aluminum nitride, magnesium oxide, boron nitride, zinc oxide, zirconium oxide or barium sulfate having a particle size ranging from 50 nm to 5 μm, or a plurality of particles. A mixture of the above powder particles.

Phosphor particles are included in the light emitting unit 104. For example, the plurality of light emitting units 104 are arranged in a two-dimensional matrix among the second reflective layers 103, and each four adjacent light emitting units 104 correspond to one pixel. In the case where a blue laser light is used as the excitation light source, one of the four light-emitting units 104 is made to be a light-emitting unit 104 that scatters or reflects the blue laser light. Specifically, the anti-scattering material may be coated on the upper surface of one of the light-emitting units 104, or the light-emitting unit 104 including the reflective material may be used to scatter or reflect the blue laser light, and the remaining three Among the plurality of light-emitting units 104, at least two of the light-emitting units 104 respectively contain corresponding phosphor particles, so that green and red fluorescence can be respectively emitted under the excitation of the blue laser light. Thus, pixels capable of emitting light of three primary colors of red, green, and blue are formed. In addition, the light-emitting unit 104 may also be mixed with yellow phosphor particles while containing a part of the reflective material inside, so that the yellow light and the blue light are mixed in a certain ratio to exhibit a white light combination. This structure can bypass the method of using a high-speed rotating color wheel in a conventional laser display technology to cause three primary colors.

In the fluorescent pixel chip 100 of the present embodiment, each of the light-emitting units 104 including the phosphor particles is an independent light-emitting body, and when it is excited by the incident laser light, the light emitted by the light-emitting unit is first. The reflective layer 102 and the surrounding second reflective layer 103 are reflected, so that the light emitted by the two adjacent light-emitting units 104 does not interfere with each other. In application, one or more or all of the light emitting units 104 may be illuminated by modulating the incident light to obtain the desired excited light.

The fluorescent pixel chip 100 of the present embodiment is a reflective fluorescent pixel chip, and the excitation light is incident from directly above the chip. After the light-emitting unit 104 is excited, the emitted visible light is reflected by the first reflective layer 102 and is emitted directly upward. The back surface of the substrate 101 (i.e., the lower side of the substrate 101 in Fig. 1) may be connected with an opaque heat sink or heat sink, such as a metal heat sink or the like, to allow heat generated during the light emission to be led out from the bottom of the chip to the outside. Compared to transmissive chips, it greatly improves heat dissipation and can withstand higher power density laser illumination and emit brighter light.

In addition, the periphery of the light emitting unit 104 is covered by the second reflective layer 103, the bottom of which is covered by the first reflective layer 102, and the first reflective layer 102 cannot transmit light, and the second reflective layer 103 having the reflective material cannot The light is transmitted, and the bottom of the first reflective layer 102 is also connected with the heat-conductive substrate 101, and the light-transmissive heat sink is also connected. Therefore, the design and structure cannot be used for the transmissive fluorescent pixels. chip.

Meanwhile, in the reflective fluorescent pixel chip 100, the surface of each of the light-emitting units 104 other than the upper surface is covered by the layer containing the reflective material as described above, so that the light emitted by the light-emitting unit is removed from the upper surface. The outer five faces are limited and reflected, and the reflected light eventually exits from the upper surface. Thus, the periphery and the lower surface of each of the light-emitting units 104 are blocked by the reflective material. Therefore, the light emission of each of the light-emitting units 104 does not affect the light emission of the adjacent light-emitting units 104, and the occurrence of color mixing or the like can be avoided.

Note that here, the light emitting unit 104 is described as a regular cube, but those skilled in the art should understand that the shape of the light emitting unit is not limited to a cube, but may be other regular shapes, and may even be an irregular shape.

Embodiment 2

FIG. 3 shows an example of another fluorescent pixel chip 200 in accordance with the present invention.

In FIG. 3, the relative positions of the substrate 201, the first reflective layer 202, and the second reflective layer 203 are the same as those of the fluorescent pixel chip 100 of the first embodiment. In the second reflective layer 203 of the fluorescent pixel chip 200, the light emitting unit 204 is embedded in the second reflective layer 203, the upper surface of which is exposed from the upper surface of the second reflective layer 203, except that the upper surface thereof is lower than the upper surface of the second reflective layer 203.

Since the upper surface of the second reflective layer 203 is higher than the upper surface of the light emitting unit 204, the second reflective layer 203 can better isolate the fluorescent or reflected light of each color emitted by each of the light emitting units 204, thereby further preventing the occurrence of color mixing.

Method of manufacturing light emitting unit

Hereinafter, a method of manufacturing the light-emitting units 104 and 204 of the fluorescent pixel chip of the present invention will be described in detail with reference to FIG.

4 is a schematic explanatory diagram of a method of manufacturing the light-emitting units 104 and 204 of the present invention.

First, the ceramic substrate 301 is prepared in step 1, and the ceramic substrate 301 may be one of substrates such as alumina, zirconia, or aluminum nitride. The surface of the ceramic substrate 301 is flat and smooth, and can withstand a high temperature of 1000 ° C or higher.

Next, step 2 is performed to prepare a carrier release layer 302 on the above ceramic substrate 301. Specifically, the slurry for preparing the release layer 302 is applied to the ceramic substrate 301 to a thickness of between 50 and 300 um. Then, it was baked in a high temperature environment at a temperature of 120 ° C for about 1 hour to obtain a supported release layer 301.

The above-described slurry for preparing the release layer 302 can be prepared by thoroughly mixing inorganic powder particles with an organic vehicle, for example, by ball milling to sufficiently mix the inorganic powder particles with an organic vehicle. The inorganic powder particles may be selected from inorganic powders which do not decompose at a high temperature and have a particle diameter of less than 5 μm.

Preferably, the inorganic powder is selected from white or nearly white powder particles of alumina, titanium oxide, zirconium oxide, boron nitride, aluminum nitride, or the like, and phosphor particles may be selected as needed.

Still more preferably, alumina particles having a particle diameter of between 200 nm and 3 μm are selected.

Then, step 3 is performed to prepare an ultra-thin luminescent glass layer 303. Specifically, for example, yellow phosphor particles, glass frit, and an organic vehicle are thoroughly mixed by ball milling to obtain a green slurry. Next, the above raw slurry is brushed over the load-bearing release layer 302 to a thickness of about 50-300 um. After drying at 120 ° C for about one hour, it was sintered at a temperature of 800-950 ° C for 1 hour.

Note that those skilled in the art will appreciate that the yellow phosphor herein may also be replaced with a phosphor that emits light of a color such as green or red, as needed.

After the sintering, the ultra-thin luminescent glass layer 303 can be detached from the substrate, that is, the sintered release layer 3031 shown in the step 4 is obtained. However, there may be a little white particle bond on the back side, which can be removed by a simple grinding or ultrasonic vibration process to obtain an ultra-thin luminescent glass that can be processed.

Next, step 5 is performed to perform a cutting process on the release layer 3031 to form the light-emitting units 104 and 204. Preferably, a small square piece having a size of 1 x 1 mm is cut on the release layer 3031 by a laser cutting process. Of course, those skilled in the art should understand that these square sheets can also be cut into other sizes according to actual needs or processing techniques.

Finally, in step 6, the cut small square piece, that is, the light-emitting unit 104, is bonded to the smooth smooth sapphire or other smooth mother board 3001 in a certain order using a solution such as PVB. Here, the mother board can be It is the same or different ceramic substrate as the ceramic substrate used in the first step. The distance between the small square pieces enables the reflective material contained in the second reflective layer 103 filled between the light emitting units 104 to provide sufficient reflectance. A certain space is reserved at both ends of the mother board 3001 for subsequent alignment. The purpose of using the PVB solution is to subsequently remove it at a high temperature of 600 degrees or more to separate the mother board 3001 from the small square piece. This will be referred to in the following.

Through the above steps, the light-emitting unit 104 bonded to the mother board 3001 can be obtained. For the convenience of explanation. Hereinafter, the mother board 3001 to which the light emitting unit 104 is bonded is referred to as a structure 1001.

Fluorescent pixel chip manufacturing method

Example one

Next, a method of manufacturing the fluorescent pixel chip 100 of the present invention will be described in detail with reference to FIG.

FIG. 5 is an explanatory diagram of a method of manufacturing the fluorescent pixel chip 100 of the present invention.

First, in step a, the substrate 101 is prepared. The substrate 101 may be one of a high thermal conductivity ceramic or single crystal substrate such as aluminum nitride, aluminum oxide, silicon carbide, silicon nitride or sapphire, and is preferably an aluminum nitride ceramic substrate. The thickness of the substrate 101 can be set according to the specific use requirements of the sample, and is preferably 0.35-2 mm. The length and width of the substrate 101 can be set as needed, and here, a substrate having a size of 10 × 10 mm is taken as an example.

In step b, a first reflective layer 102 is prepared on the substrate 101. The highly reflective particles including the reflective material, the glass frit 1 and the organic vehicle are weighed in proportion, and thoroughly mixed by ball milling to prepare a slurry 1. The above slurry was applied to the substrate 101. Then, the substrate 101 coated with the slurry is placed in an oven, and the slurry is quickly dried at a temperature of 80 to 150 ° C for about 10-45 minutes. After drying, it is placed in a sintering furnace for sintering. The sintering temperature can be selected from 700 to 1200 ° C according to the actual situation, and can be sintered in a normal pressure, a vacuum or a protective atmosphere, and the holding time varies from 10 min to 3 h. Then, the substrate 101 on which the first reflective layer 102 is formed as shown in step b of Fig. 5 can be obtained. The thickness of the first reflective layer 102 is preferably 50-200 um.

Here, the highly reflective particles may be ultra-white monomer powder particles such as alumina, aluminum nitride, magnesium oxide, boron nitride, zinc oxide, zirconium oxide, barium sulfate, etc. having a particle size ranging from 50 nm to 5 μm, or A mixture of a plurality of or more powder particles. The organic carrier may be one of silicone oil, ethanol, ethylene glycol, xylene, ethyl cellulose, terpineol, butyl carbitol, PVA, PVB, PAA, PEG of each system such as phenyl or methyl. Multiple hybrids. The glass powder may be one or more of silicate glass, lead silicate glass, aluminoborosilicate glass, aluminate glass, soda lime glass, and quartz glass having different softening points.

Next, in step c, a light-emitting preliminary layer 1003 is prepared on the substrate 101 on which the first reflective layer 102 is formed prepared in the step b. The high-reflection particles, the glass frit, and the organic vehicle are weighed in a certain ratio, mixed into a slurry 2, and applied onto the first reflective layer 102 to obtain a light-emitting preliminary layer 1003. Among them, the melting point of the glass frit 2 is lower than that of the glass frit 1, but higher than 600 ° C, or higher than the volatilization temperature of the binder PVB when the light-emitting unit 104 is bonded to the mother substrate 3001 as used in the foregoing.

The content of the glass powder 2 in the slurry 2 is also lower than the content of the glass powder 1 in the slurry 1, the content of the high-reflecting particles in the slurry 2 is higher than the content of the high-reflecting particles in the slurry 1, and the viscosity of the slurry 2 is also Higher than the viscosity of the slurry one. The illuminating preliminary layer 1003 has a certain leveling and thixotropic property, and its thickness ranges from 50 to 200 um, and its thickness is equal to the thickness of the small square sheet prepared in the foregoing, that is, the thickness of the light emitting unit 104, or larger than the thickness of the light emitting unit 104.

In the step d, the structure 1001 to which the light emitting unit 104 is bonded is prepared. In the above, how to obtain the structure 1001 has been described in detail, and will not be described again here.

Next, in step e, the structure 1001 is placed on the substrate 101 on which the light-emitting preliminary layer 1003 and the first reflective layer 102 are formed in step c, in such a manner that the light-emitting unit 104 is downward, so that the light-emitting unit 104 and the light-emitting unit are illuminated. The preliminary layer 1003 is opposite.

In step f, a slow vertical downward pressure is applied to the structure 1001, and the small square, that is, the light emitting unit 104, is slowly pressed into the 1003 layer until the light emitting unit 104 is entirely embedded in the light emitting preliminary layer 1003.

Then, it was allowed to stand for a while until the 1003 layer was sufficiently leveled, and the structure 1002 in the figure shown in the step f was placed in an oven at 80-150 ° C to discharge the organic carrier of 1003 slowly. After the glue is discharged, the structure 1002 is placed in a muffle furnace at a high temperature of 500-600 ° C to remove the PVB bonded between the bonding mother substrate 3001 and the light-emitting unit 104. After the PVB is excluded, the mother board 3001 can be removed. Since the glass frit 2 in the 1003 layer has not reached the melting point at this time, it does not adhere to the mother board 3001.

After the luminescence preparation layer 1003 is sintered, a second reflection layer is formed.

Then, in step g, the structure in which the mother substrate 3001 is removed is continuously sintered in a muffle furnace, and the sintering temperature is the sintering temperature of the glass frit 2 in the 1003 layer, so that the light-emitting preliminary layer 1003 finally becomes the second reflective layer 103, Fluorescent pixel chip 100.

In the fluorescent pixel chip 100, each of the light-emitting units 104 serves as an independent light-emitting point. When it is excited by the incident laser light, it emits light which is reflected by the bottom 102 layer and the surrounding 103 layers; two adjacent light-emitting lights The light emitted by unit 104 does not interfere with each other. At the time of application, the incident light may be modulated to illuminate one or more or all of the light-emitting units 104 to obtain the desired excited light.

Here, preferably, in steps e and f, a higher platform 302 is placed on each side of the substrate 101.

When a slow vertical downward pressure is applied to the structure 1001 and the luminescent glass panel 203 is slowly pressed into the 1003 layer, as shown in step f of FIG. 5, the platforms 302 on both sides can limit the motherboard 3001. Of course, the platform 302 does not have to exist because the illuminating preliminary layer 1003 itself has a certain viscosity, and when the relatively large-area mother board 3001 moves downward and hits the surface of 1003, it also encounters the surface of the 1003 as a viscous substance. The applied resistance, when this resistance is transmitted to the sensor, prevents the motherboard 3001 from continuing to move downward.

In the case where the thickness of the light-emitting unit 104 and the light-emitting preliminary layer 1003 are equivalent, the first reflective layer 102 under the light-emitting preliminary layer 1003 is a sintered layer, and the light-emitting unit 104 can not go down when it contacts the interface of the 1003 and 102 layers. motion. Therefore, at this time, under the common limitation of the platform 302 and the first reflective layer 102, the light emitting unit 104 is completely immersed in the 1003 layer, as shown by the structure in the step g in FIG. 5, their upper surfaces are flush with each other. .

Example two

Another method of manufacturing the fluorescent pixel chip 100 of the present invention will be described in detail below with reference to FIG.

As can be seen from FIG. 6, steps i and ii are substantially identical to steps a and b in FIG. 5, and therefore, details are not described herein again.

The difference is that in FIG. 6, in step iii, the light-emitting unit 104 is directly bonded to the sintered first reflective layer 102.

Here, the method of preparing the light-emitting unit 104 can still refer to steps 1 to 5 in the description of FIG. 4 above. However, after the light-emitting unit 104 is prepared, unlike the explanation of step 6 in FIG. 4, in this example, the cut light-emitting unit 104 is bonded to the first reflective layer 102 in a certain order using a solution such as PVB. on. Of course, the bonded light-emitting units 104 can also be arranged in three primary colors, that is, the three-color light-emitting units 104 are respectively prepared in such a manner that the light-emitting units 104 of three different colors correspond to one pixel. For example, three kinds of light-emitting units 104 of red, green, and blue are arranged as one pixel, or four kinds of light-emitting units of red, green, blue, and white are arranged as one pixel or the like.

Similar to the previous example, a certain distance is left between the plurality of small squares as the light-emitting unit 104, so that the reflection effect can be satisfied. The PVB solution was used in order to be able to remove it at a temperature higher than 600 degrees.

Next, in step iv, the high-reflection particles, the glass frit, and the organic carrier are weighed in a certain ratio, and then mixed into a slurry 2, which is applied onto the first reflective layer 102 to which the light-emitting unit 104 is bonded, so as to cover 102. And 104, a light-emitting preparation layer 1033 is obtained. The glass powder used in the slurry 2 is the same as the slurry 1, the melting point is higher than 600 ° C, or higher than the volatilization temperature of the PVB used, and the content of the glass powder 1 in the slurry 2 is also lower than the glass powder in the slurry 1 The content of one, the content of the highly reflective particles in the slurry two is higher than the content of the highly reflective particles in the slurry 1, and the viscosity of the slurry two is lower than the viscosity of the slurry 1.

After the illuminating preparation layer 1033 is applied, it is vacuum-discharged and repeatedly brushed, and slowly dried in an oven at 80-120 ° C to remove the organic vehicle. Then, the 1033 layer covered by the upper surface of the light emitting unit 104 is removed by a grinding or scraping removal method to ensure that the light emitting unit 104 is exposed from the light emitting preliminary layer 1033 layer.

The structure 1004 obtained in the step iv of Fig. 6 was placed in a muffle furnace, and the temperature was slowly raised to 600 ° C for 2 to 10 hours to completely eliminate the PVB. Then, the temperature is raised to the sintering temperature of the glass frit 1 and the temperature is kept for 10 min to 2 h to obtain a fluorescent pixel chip 100 as shown in FIG. 2 in plan view.

Note that in the present example, it is necessary to fix the light-emitting unit 104 in the final sintering process, so that the glass powder in the slurry one and the slurry two are of the same type, and can enter the sintered state at the sintering temperature. Among them, the content of glass in the slurry 2 is small, and under the influence of the reflective particles, the fluidity at the time of sintering is low, and the arrangement of the light-emitting units 104 is not broken.

In the preparation of the structure of the fluorescent pixel chip, a glass system is employed. Solving the problem of thermal expansion coefficient matching of the second reflective layer, the first reflective layer and the substrate, and the problem of bonding performance. The second reflective layer and the first reflective layer both pass through the liquid phase during the sintering process and are bonded to each other during the cooling process to provide adhesion. Both the second reflective layer and the first reflective layer contract during cooling, which is not significantly greater than the shrinkage of the substrate due to temperature degradation, and the resulting force is not greater than the adhesion or adhesion between the layers.

Further, the fluorescent pixel chip 200 of the present invention can also be manufactured by the above method.

Specifically, in the above step iv, after the illuminating preparation layer 1033 is applied, it is slowly dried in an oven at 80-120 ° C by vacuum degassing and repeated brushing to remove the organic vehicle. Then, the light-emitting preliminary layer 1033 above the light-emitting unit 104 is removed by laser etching to ensure that the light-emitting unit 104 is exposed from the 1033 layer. The other steps are the same as those described above for preparing the fluorescent pixel 100.

to sum up

The fluorescent pixel chip of the glass structure of the present invention is of a reflective design, and the peculiar manner is the structure of the substrate + the first reflective layer + the second reflective layer. The substrate is a ceramic substrate capable of withstanding a temperature higher than 900 degrees, such as aluminum nitride. The first reflective layer is directly brushed and sintered on the substrate, and the structure is compact and easy to prepare in a large area, and the second reflective layer is a brush. It is coated and sintered on the first reflective layer, and has strong adhesion to the first reflective layer and the substrate, and can be used for monolithic processing.

The invention can be constructed as follows:

(1) A fluorescent chip that receives excitation light emitted from an excitation light source and generates a corresponding laser light, comprising: a substrate; a first reflective layer, the first reflective layer is on the substrate; and a second reflective layer, The second reflective layer is disposed on the first reflective layer. In the second reflective layer, a plurality of openings arranged in two dimensions are disposed, and each of the openings is provided with a light emitting unit, and an upper surface of each of the light emitting units is not higher than the first The upper surface of the two reflective layers.

(2) The fluorescent chip according to (1), wherein the content of the reflective material of the second reflective layer is greater than the content of the reflective material of the first reflective layer.

(3) The fluorescent chip according to (1) or (2), wherein a part of the light emitting unit includes a scattering material or a reflective material.

(4) The fluorescent chip according to any one of (1) to (3), wherein the multi-dimensional arrangement is a two-dimensional matrix arrangement.

(5) The fluorescent chip according to any one of (1) to (4), wherein each of the adjacent ones of the plurality of light-emitting units arranged in a two-dimensional matrix corresponds to one pixel point, in each corresponding Among the pixels, one of the light emitting units is coated with a scattering material or a reflective material, and the three light emitting units are coated with a fluorescent material.

(6) According to the fluorescent chip of (5), the excitation light source emits the blue laser light, and the fluorescence emitted from the fluorescent chip includes at least red fluorescence and green fluorescence.

(7) A projection apparatus comprising: an excitation light source; and the fluorescent chip according to any one of (1) to (6), wherein the light source is located on a side of the second reflective layer adjacent to the fluorescent chip for emitting excitation light, The fluorescent chip receives the excitation light and generates laser light of different wavelengths, and the laser light is emitted from the same side of the light incident surface of the excitation light source of the fluorescent chip.

(8) A method of manufacturing a fluorescent chip, the fluorescent chip receiving excitation light emitted from an excitation light source and generating a corresponding laser light, the method comprising: forming a first reflective layer on the substrate; and forming a second on the first reflective layer In the reflective layer, in the second reflective layer, a plurality of openings arranged in two dimensions are disposed, and each of the openings is provided with a light emitting unit, and an upper surface of each of the light emitting units is not higher than an upper surface of the second reflective layer.

(9) The method of manufacturing a fluorescent chip according to (8), wherein a content of the reflective material of the second reflective layer is greater than a content of the reflective material of the first reflective layer.

(10) The method of manufacturing a fluorescent chip according to (9), the forming the first reflective layer on the substrate comprises: weighing the reflective material, the first glass frit, and the organic carrier in a predetermined ratio and then mixing into a first slurry; Painting the first slurry onto the substrate; and curing the first slurry applied to the substrate.

(11) The method of manufacturing a fluorescent chip according to (10), the forming the second reflective layer on the first reflective layer comprises: forming a preliminary layer on the first reflective layer, the reflective layer being included in the preliminary layer; forming a plurality of light emitting units, And bonding each of the light emitting units to the mother board; pressing the mother board to which the light emitting unit is bonded downward according to the manner in which the light emitting unit faces the preliminary layer, so that each light emitting unit is squeezed into the preliminary layer; and removing the mother The plate is such that the upper surface of the light emitting unit is exposed from the preliminary layer.

(12) The method of manufacturing a fluorescent chip according to (11), wherein forming the preliminary layer on the first reflective layer comprises: weighing the reflective material, the second glass frit, and the organic carrier in a predetermined ratio and then mixing the mixture into a second slurry And brushing the second slurry onto the first reflective layer, wherein the melting point of the second glass frit is lower than the melting point of the first glass frit.

(13) The method of manufacturing a fluorescent chip according to (10), the forming the second reflective layer on the first reflective layer comprises: forming a plurality of light emitting units, and bonding the respective light emitting units to the first reflective layer; acquiring a preliminary slurry The preliminary slurry contains a reflective material, and the preliminary slurry is applied to the first reflective layer and the plurality of light emitting units such that the upper surface of the light emitting unit is exposed from the preliminary layer formed by the preliminary slurry; and the preliminary layer is cured.

(14) The method of manufacturing a fluorescent chip according to (10), the forming the second reflective layer on the first reflective layer comprises: forming a plurality of light emitting units, and bonding the respective light emitting units to the first reflective layer; acquiring a preliminary slurry And preparing a slurry comprising a reflective material, applying the preliminary slurry to the first reflective layer and the plurality of light emitting units to form a preliminary layer; curing the preliminary layer; and etching the preliminary layer such that the upper surface of the light emitting unit is prepared The layer is exposed.

(15) The method of manufacturing a fluorescent chip according to (11), (13) or (14), wherein the forming the plurality of light-emitting units comprises: forming a light-emitting glass layer on the ceramic substrate, the light-emitting glass layer comprising a fluorescent material, a reflective material, and scattering One or more of the materials; and cutting the luminescent glass layer.

It is apparent to those skilled in the art that, in addition to the above-described embodiments, alternatives may be devised without departing from the spirit of the invention.

Claims

A fluorescent chip that receives excitation light emitted from an excitation light source and generates a corresponding laser light, and is characterized by comprising:

Substrate

a first reflective layer, the first reflective layer being on the substrate;

a second reflective layer, the second reflective layer is disposed on the first reflective layer and encloses a plurality of two-dimensionally arranged receiving cavities, and the second reflective layer constitutes a sidewall of the receiving cavity, each An illuminating unit is disposed in the accommodating cavity, and an upper surface of each of the illuminating units is not higher than a plane in which the opening of the accommodating cavity is located.

2. A fluorescent chip according to claim 1, wherein

The content of the reflective material of the second reflective layer is greater than the content of the reflective material of the first reflective layer.

3. A fluorescent chip according to claim 2, wherein

A portion of the light emitting unit includes a scattering material or a reflective material.

4. A fluorescent chip according to claim 3, wherein

The two-dimensional arrangement is a two-dimensional matrix arrangement.

The fluorescent chip according to claim 4, wherein

One of the plurality of the light-emitting units arranged in the two-dimensional matrix, each adjacent one of the light-emitting units corresponds to one pixel, and one light-emitting unit is coated with a scattering material in each of the corresponding pixels Or a reflective material, the three light-emitting units are coated with a fluorescent material.

6. A fluorescent chip according to claim 5, wherein

The excitation light source emits a blue laser light, and the fluorescence emitted by the fluorescent chip includes at least red fluorescence and green fluorescence.

7. A projection apparatus, comprising: an excitation light source;

The fluorescent chip according to any one of claims 1 to 6, wherein the light source is located on a side close to the second reflective layer of the fluorescent chip for emitting excitation light, and the fluorescent chip receives the light The light is excited and generates laser light of different wavelengths, which is emitted from the same side of the light incident surface of the excitation light source of the fluorescent chip.

8. A method of fabricating a fluorescent chip, the fluorescent chip receiving excitation light emitted from an excitation light source and generating a corresponding laser light, wherein the method comprises:

Forming a first reflective layer on the substrate;

Forming a second reflective layer on the first reflective layer, and arranging a plurality of two-dimensionally arranged receiving cavities in the second reflective layer, the second reflective layer forming a sidewall of the receiving cavity, each A light-emitting unit is disposed in a receiving cavity, and an upper surface of each of the light-emitting units is not higher than a plane in which the opening of the receiving cavity is located.

9. The method of manufacturing a fluorescent chip according to claim 8, wherein a content of the reflective material of the second reflective layer is greater than a content of the reflective material of the first reflective layer.

10. A method of fabricating a fluorescent chip according to claim 9, wherein

Forming the first reflective layer on the substrate includes:

The reflective material, the first glass frit, and the organic vehicle are weighed in a predetermined ratio and then mixed into a first slurry;

Painting the first slurry onto the substrate;

The first paste applied to the substrate is cured to obtain a first reflective layer.

11. The method of fabricating a fluorescent chip according to claim 10, wherein forming a preliminary layer on the first reflective layer comprises:

The reflective material, the second glass frit, and the organic vehicle are weighed in a predetermined ratio and then mixed into a second slurry;

Brushing the second slurry onto the first reflective layer,

Wherein the melting point of the second glass frit is lower than the melting point of the first glass frit.

12. The method of fabricating a fluorescent chip according to claim 10, wherein forming the second reflective layer on the first reflective layer comprises:

Forming a plurality of the light emitting units, and bonding each of the light emitting units to the first reflective layer;

Obtaining a preliminary slurry, the preliminary slurry comprising the reflective material, and applying the preliminary slurry to the first reflective layer and the plurality of the light emitting units such that an upper surface of the light emitting unit is The preliminary layer formed by the preliminary slurry is exposed;

The preliminary layer is cured to obtain a second reflective layer.

13. A method of fabricating a fluorescent chip according to claim 10, wherein

Forming the second reflective layer on the first reflective layer includes:

Obtaining a preliminary slurry, the preliminary slurry comprising the reflective material, and applying the preliminary slurry to the first reflective layer and the plurality of the light emitting units to form a preliminary layer;

Curing the preparation layer;

The preliminary layer is etched such that an upper surface of the light emitting unit is exposed from the preliminary layer.

A method of manufacturing a fluorescent chip according to claim 11, 12 or 13, wherein

Forming a plurality of the light emitting units includes:

Forming a luminescent glass layer on the ceramic substrate, the luminescent glass layer comprising one or more of a fluorescent material, a reflective material, and a scattering material;

The luminescent glass layer is cut.