WO2019006793A1 - 一种白光oled器件 - Google Patents

一种白光oled器件 Download PDF

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Publication number
WO2019006793A1
WO2019006793A1 PCT/CN2017/094531 CN2017094531W WO2019006793A1 WO 2019006793 A1 WO2019006793 A1 WO 2019006793A1 CN 2017094531 W CN2017094531 W CN 2017094531W WO 2019006793 A1 WO2019006793 A1 WO 2019006793A1
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white light
oled device
layer
reflective layer
light oled
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French (fr)
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黄伟
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means

Definitions

  • the invention belongs to the technical field of organic light emitting diodes, and in particular to a white light OLED device.
  • OLED organic electroluminescence
  • OLEDs have large differences in the luminous efficiency of their internal luminescent materials. Therefore, in order to obtain ideal colorimetric parameters when manufacturing devices, it is necessary to adjust the luminous efficiency of materials of various colors; for example, in a series structure, in order to match low luminous efficiency.
  • the blue light often needs to reduce the luminous efficiency of red and green light. Thus, red and green light will generate more heat, causing high heat generation of the device.
  • the present invention provides a white light OLED device that changes the spectrum of the transmitted spectrum by selecting a material of the internal reflection layer during the adjustment period to adjust the color coordinates of the light emitting device, etc.
  • the purpose of the parameter is to solve the above problems in the prior art.
  • a white light OLED device comprising a substrate, an anode, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and an electron injection layer which are sequentially stacked; the white light OLED device further comprises an electron injection disposed at the electron injection a reflective layer on the layer or a reflective layer interposed between the substrate and the anode; wherein the material of the reflective layer has a selective reflection effect on light of different wavelengths.
  • the material of the reflective layer has a selective reflection effect on light emitted by a material having a higher rated luminous efficiency in the light-emitting layer.
  • the reflective layer is a single layer film formed of any one of Al, Ag, SiO 2 , SiN x , TiO x , GaO x , or a-Si or a composite film formed of at least two.
  • the thickness of the reflective layer is the thickness of the reflective layer.
  • the white light OLED device is a three primary color white light device.
  • the reflective layer has a thickness of Al film.
  • the white light OLED device is a blue light yellow stacked white light device.
  • the reflective layer has a thickness of And 400 Al: TiO 2 composite film.
  • the white OLED device further includes a cathode interposed between the electron injection layer and the reflective layer.
  • the invention adjusts the spectrum of the white light OLED device by using the reflective layer of different materials, so that the luminous efficiency of each luminescent material in the white OLED device during illuminating is optimized, thereby overcoming the low matching in the prior art white OLED device.
  • the luminous efficiency of the luminescent material and artificially reduce the actual luminous efficiency of other luminescent materials with higher rated luminous efficiency, so that these luminescent materials with high rated luminous efficiency will generate more heat to avoid carrier concentration in the device. Matching, high heat, charge and heat accumulation.
  • FIG. 1 is a schematic structural view of a white light OLED device according to Embodiment 1 of the present invention.
  • FIG. 2 is a schematic structural view of a white light OLED device according to Embodiment 2 of the present invention.
  • the white light OLED device includes a substrate 11 , an anode 121 , a hole injection layer 131 , and a hole transport layer 132 which are sequentially stacked.
  • the light-emitting layer 14 the electron transport layer 151, the electron injection layer 152, the cathode 122, and the reflective layer 16; wherein the material of the reflective layer 16 has a selective reflection effect on light of different wavelengths.
  • arrows indicate the direction in which light is emitted.
  • the white OLED device provided in this embodiment is a three-primary white light device, that is, the light-emitting layer is composed of RGB pixels, and the white light OLED device can emit ideal white light.
  • the pixel arrangement of the white OLED may be a standard RGB arrangement, a PenTile arrangement, a diamond pixel arrangement (ie, Diamond), or other manners, which are not described herein again, and those skilled in the art refer to the specific requirements of the device. There is a technical choice.
  • the pixel arrangement manner of the white light OLED is specifically a standard RGB arrangement; since the B pixel emitting light in which the blue light is emitted is inefficient, in order to match the B pixel, it is necessary to artificially reduce the R pixel and the green light emitting red light.
  • the Al film serves as the reflective layer 16.
  • the reflective layer 16 can reflect the red light emitted by the R pixel and the green light emitted by the G pixel, thereby changing the spectrum of the transmitted spectrum, and adjusting the color coordinates of the light emitting device, etc.
  • the R pixel and the G pixel have higher rated luminous efficiency than the B pixel, and thus the red light and the G pixel emitted by the material of the reflective layer 16 to the R pixel are required.
  • the emitted green light has a selective reflection effect, that is, selective reflection of light emitted from a material having a higher rated luminous efficiency in the light-emitting layer 14.
  • the substrate 11, the anode 121, the hole injection layer 131, and hole transport The material selection and size setting of the layer 132, the light-emitting layer 14, the electron-transport layer 151, the electron-injecting layer 152, and the cathode 122 are not described herein again.
  • Those skilled in the art may refer to the prior art, such as the substrate 11.
  • a glass substrate is selected, and the anode 121 may be ITO or the like.
  • the cathode 122 is a thin cathode material, which is almost transparent, so that the red light emitted by the R pixel and the green light emitted by the G pixel cannot be reflected, but if the reflection
  • the thickness of the layer 16 is sufficiently thick and the material thereof belongs to the cathode material, the arrangement of the cathode 122 can be omitted, and the reflective layer 16 simultaneously functions as a reflection and a cathode electrode.
  • the white light OLED device includes a substrate 21, a reflective layer 22, an anode 231, a hole injection layer 241, and an empty layer.
  • an arrow indicates a light exiting direction.
  • the white light OLED device provided in this embodiment is a blue light yellow light stacking white light device, that is, the light emitting layer is composed of a blue light emitting layer and a yellow light emitting layer, and the white light OLED device can emit warm lighting. Toned white light.
  • the yellow light emitting layer has low luminous efficiency, in order to match the yellow light emitting layer, the need of the white light OLED artificially reduces the luminous efficiency of the blue light emitting layer, in order to avoid carrier mismatch in the device, and
  • the blue light-emitting layer uses excess energy for heat generation to cause a problem of high heat generation, charge and heat accumulation of the device.
  • the thickness is selected. Al film and thickness are The composite film formed by the TiO 2 film serves as the reflective layer 22, so that the reflective layer 22 can reflect the blue light emitted by the blue light emitting layer, thereby changing the spectrum of the transmitted spectrum, and adjusting the color coordinates of the light emitting device and the like. purpose.
  • the blue light-emitting layer has a higher rated luminous efficiency than the yellow light-emitting layer, and thus the blue light emitted from the material of the reflective layer 22 to the blue light-emitting layer is required. It has a selective reflection effect, that is, a selective reflection effect on light emitted from a material having a higher rated luminous efficiency in the light-emitting layer 25.
  • the material selection and size setting of the substrate 21, the anode 231, the hole injection layer 241, the hole transport layer 242, the light-emitting layer 25, the electron transport layer 261, the electron injection layer 262, and the cathode 232 are no longer set here.
  • the substrate 21 can be a glass substrate
  • the anode 231 can be made of ITO or the like.
  • the reflective layer when the top-emitting OLED device is fabricated, the reflective layer is disposed between the substrate and the anode, and when the bottom-emitting OLED device is fabricated, the reflective layer is disposed.
  • the cathode or on the electron injection layer in this case, the reflective layer has both reflection and cathode electrodes; at the same time, the material of the reflective layer is required to have selective reflection of light of different wavelengths, especially for the light-emitting layer. Light emitted by materials of higher rated luminous efficiency has a selective reflection effect.
  • the material of the reflective layer in the white OLED device according to the present invention is not limited to that described in Embodiment 1 and Embodiment 2 above, and may be selected from Al, Ag, SiO 2 , SiN x , TiO x , GaO x , a single layer film formed of any one of a-Si or at least two formed composite films; at the same time, according to a specifically selected material, the thickness thereof is generally controlled Within the scope of the.
  • the selection of the material of the reflective layer is the most critical, such as the Mg film which is the same as the Al film and the Ag film, which is not feasible because the Mg film is different.
  • the reflection of light of a wavelength does not have a significant selectivity, that is, its absorption rate for long-wavelength light and its absorption rate for short-wavelength light do not differ much.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

提供了一种白光OLED器件，包括依次叠层设置的基板（11、21）、阳极（121、231）、空穴注入层（131、241）、空穴传输层（132、242）、发光层（14、25）、电子传输层（151、261）和电子注入层（152、262）；白光OLED器件还包括设置在电子注入层（152）上的反射层（16）或夹设于基板（21）和阳极（231）之间的反射层（22）；其中，反射层（16、22）的材料对不同波长的光具有选择性反射作用。通过利用不同材质的反射层来调节器件光谱，使得白光OLED器件内各发光材料在发光期间的发光效率最优化，从而克服了现有技术中的白光OLED器件中为了匹配低发光效率的发光材料、而人为降低其他具有较高额定发光效率的发光材料的实际发光效率，从而引起这些高额定发光效率的发光材料会产生更多的热量，以避免器件内载流子浓度不匹配、发热量高、电荷与热量累积等问题。

Description

一种白光OLED器件 技术领域
本发明属于有机发光二极管技术领域，具体地讲，涉及一种白光OLED器件。
背景技术
目前在照明和显示领域中，由于有机电致发光(OLED)自身的特点，如低启动电压、轻薄、自发光等，而越来越多地被广泛应用于开发照明产品以及面板行业中，以达到低能耗，轻薄和面光源等需求。
OLED因其内部发光材料的发光效率差异较大，因此在制作器件时，为了得到理想的色度学参数，需要调节各颜色的材料的发光效率；比如在串联式结构中，为了匹配低发光效率的蓝光，常常需要降低红、绿光发光效率，如此，红、绿光将会产生更多的热量，造成器件发热量高等问题。
发明内容
为解决上述现有技术存在的问题，本发明提供了一种白光OLED器件，该白光OLED器件通过选择调整期内部反射层的材料，从而改变透出光谱的频谱，以达到调整发光器件色坐标等参数的目的。
为了达到上述发明目的，本发明采用了如下的技术方案：
一种白光OLED器件，包括依次叠层设置的基板、阳极、空穴注入层、空穴传输层、发光层、电子传输层和电子注入层；所述白光OLED器件还包括设置在所述电子注入层上的反射层或夹设于所述基板和所述阳极之间的反射层；其中，所述反射层的材料对不同波长的光具有选择性反射作用。
进一步地，所述反射层的材料对所述发光层中具有较高额定发光效率的材料所发出的光具有选择性反射作用。
进一步地，所述反射层为由Al、Ag、SiO2、SiNx、TiOx、GaOx、a-Si中的任意一种形成的单层膜或至少两种形成的复合膜。
进一步地，所述反射层的厚度为
Figure PCTCN2017094531-appb-000001
进一步地，所述白光OLED器件为三原色白光器件。
进一步地，所述反射层为厚度为
Figure PCTCN2017094531-appb-000002
的Al膜。
进一步地，所述白光OLED器件为蓝光黄光堆叠白光器件。
进一步地，所述反射层为厚度分别为
Figure PCTCN2017094531-appb-000003
和400
Figure PCTCN2017094531-appb-000004
的Al:TiO2复合膜。
进一步地，所述白光OLED器件还包括夹设在所述电子注入层和所述反射层之间的阴极。
本发明通过利用不同材质的反射层来调节白光OLED器件的光谱，使得该白光OLED器件内各发光材料在发光期间的发光效率最优化，从而克服了现有技术中的白光OLED器件中为了匹配低发光效率的发光材料、而人为降低其他具有较高额定发光效率的发光材料的实际发光效率，从而引起这些高额定发光效率的发光材料会产生更多的热量，以避免器件内载流子浓度不匹配、发热量高、电荷与热量累积等问题。
附图说明
通过结合附图进行的以下描述，本发明的实施例的上述和其它方面、特点和优点将变得更加清楚，附图中：
图1是根据本发明的实施例1的白光OLED器件的结构示意图；
图2是根据本发明的实施例2的白光OLED器件的结构示意图。
具体实施方式
以下，将参照附图来详细描述本发明的实施例。然而，可以以许多不同的形式来实施本发明，并且本发明不应该被解释为限制于这里阐述的具体实施例。相反，提供这些实施例是为了解释本发明的原理及其实际应用，从而使本领域的其他技术人员能够理解本发明的各种 实施例和适合于特定预期应用的各种修改。在附图中，为了清楚起见，可以夸大元件的形状和尺寸，并且相同的标号将始终被用于表示相同或相似的元件。
实施例1
本实施例提供了一种底发光的白光OLED器件；具体参照图1，根据本实施例的白光OLED器件包括依次叠层设置的基板11、阳极121、空穴注入层131、空穴传输层132、发光层14、电子传输层151、电子注入层152、阴极122和反射层16；其中，该反射层16的材料对不同波长的光具有选择性反射作用。在图1中，箭头表示光出射方向。
具体来讲，本实施例提供的白光OLED器件是一种三原色白光器件，也就是说，其发光层是由RGB像素构成的，该白光OLED器件能够发射理想白光。更为具体地，该白光OLED的像素排列方式可以是标准RGB排列、PenTile排列、钻石像素排列(即Diamond)、或其他方式，此处不再赘述，本领域技术人员根据器件的具体要求参照现有技术选择即可。
在本实施例中，该白光OLED的像素排列方式具体为标准RGB排列；由于其中发蓝光的B像素发光效率低下，因此为了匹配B像素，需要人为降低发红光的R像素及发绿光的G像素的发光效率，为了避免器件内载流子浓度不匹配，以及由于R像素和G像素将过剩的能量用于发热而造成器件发热量高、电荷与热量累积的问题，在本实施例中，选用厚度为
Figure PCTCN2017094531-appb-000005
的Al膜作为反射层16，如此，该反射层16即可对R像素发出的红光和G像素发出的绿光进行反射，从而改变了透出光谱的频谱，达到了调整发光器件色坐标等参数的目的。
由此可以看出，在本实施例的三原色白光器件中，R像素和G像素具有较B像素更高的额定发光效率，因此即要求反射层16的材料对R像素发出的红光和G像素发出的绿光具有选择性反射作用，即对发光层14中具有较高额定发光效率的材料所发出的光具有选择性反射作用。
在本实施例中，基板11、阳极121、空穴注入层131、空穴传输 层132、发光层14、电子传输层151、电子注入层152及阴极122的材料选择及尺寸设置此处不再一一赘述，本领域技术人员可参照现有技术中即可，如基板11可选用玻璃基板，阳极121可选用ITO等。
值得说明的是，在本实施例中，其中阴极122是一种薄层阴极材料，几乎呈透明状，因此无法对R像素发出的红光和G像素发出的绿光进行反射，但是，若反射层16的厚度足够厚、且其材料属于阴极材料时，即可省略阴极122的设置，反射层16同时起到反射及阴极电极的作用。
实施例2
本实施例提供了一种顶发光的白光OLED器件；具体参照图2，根据本实施例的白光OLED器件包括依次叠层设置的基板21、反射层22、阳极231、空穴注入层241、空穴传输层242、发光层25、电子传输层261、电子注入层262以及阴极232；其中，该反射层22的材料对不同波长的光具有选择性反射作用。在图2中，箭头表示光出射方向。
具体来讲，本实施例提供的白光OLED器件是一种蓝光黄光堆叠白光器件，也就是说，其发光层是由蓝光发光层和黄光发光层构成的，该白光OLED器件能够发射照明暖色调白光。
在本实施例中，由于其中黄光发光层发光效率低下，因此为了匹配黄光发光层，白光OLED的需要人为降低蓝光发光层的发光效率，为了避免器件内载流子浓度不匹配，以及由于蓝光发光层将过剩的能量用于发热而造成器件发热量高、电荷与热量累积的问题，在本实施例中，选用由厚度为
Figure PCTCN2017094531-appb-000006
的Al膜和厚度为
Figure PCTCN2017094531-appb-000007
的TiO2膜形成的复合膜作为反射层22，如此，该反射层22即可对蓝光发光层发出的蓝光进行反射，从而改变了透出光谱的频谱，达到了调整发光器件色坐标等参数的目的。
由此可以看出，在本实施例的蓝光黄光堆叠白光器件中，蓝光发光层具有较黄光发光层更高的额定发光效率，因此即要求反射层22的材料对蓝光发光层发出的蓝光具有选择性反射作用，即对发光层25中具有较高额定发光效率的材料所发出的光具有选择性反射作用。
在本实施例中，基板21、阳极231、空穴注入层241、空穴传输层242、发光层25、电子传输层261、电子注入层262及阴极232的材料选择及尺寸设置此处不再一一赘述，本领域技术人员可参照现有技术中即可，如基板21可选用玻璃基板，阳极231可选用ITO等。
根据本发明的实施例1、实施例2可以看出，当制作顶发光的OLED器件时，则将反射层设置在基板和阳极之间，当制作底发光的OLED器件时，则将反射层设置在阴极上或电子注入层上(此种情况为反射层兼具反射及阴极电极的作用)；同时，要求反射层的材料对不同波长的光具有选择性反射作用，尤其是对发光层中具有较高额定发光效率的材料所发出的光具有选择性反射作用。
当然，根据本发明的白光OLED器件中的反射层的材料并不限于上述实施例1、实施例2中所述，其可以选择由Al、Ag、SiO2、SiNx、TiOx、GaOx、a-Si中的任意一种形成的单层膜或至少两种形成的复合膜；同时，根据具体选择的材料，一般将其厚度控制在
Figure PCTCN2017094531-appb-000008
的范围内即可。
值得说明的是，在本申请的白光OLED器件中，反射层的材料的选择是最为关键的，如与Al膜、Ag膜同为金属材料的Mg膜则不可行，这是由于Mg膜对不同波长的光的反射并不具有明显的选择性，即其对长波长的光的吸收率和其对短波长的光的吸收率差别不大。
虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。

Claims (15)

  1. 一种白光OLED器件，包括依次叠层设置的基板、阳极、空穴注入层、空穴传输层、发光层、电子传输层和电子注入层；其中，所述白光OLED器件还包括设置在所述电子注入层上的反射层或夹设于所述基板和所述阳极之间的反射层；其中，所述反射层的材料对不同波长的光具有选择性反射作用。
  2. 根据权利要求1所述的白光OLED器件，其中，所述反射层的材料对所述发光层中具有较高额定发光效率的材料所发出的光具有选择性反射作用。
  3. 根据权利要求1所述的白光OLED器件，其中，所述反射层为由Al、Ag、SiO2、SiNx、TiOx、GaOx、a-Si中的任意一种形成的单层膜或至少两种形成的复合膜。
  4. 根据权利要求3所述的白光OLED器件，其中，所述反射层的厚度为
    Figure PCTCN2017094531-appb-100001
  5. 根据权利要求4所述的白光OLED器件，其中，所述白光OLED器件为三原色白光器件。
  6. 根据权利要求5所述的白光OLED器件，其中，所述反射层为厚度为
    Figure PCTCN2017094531-appb-100002
    的Al膜。
  7. 根据权利要求4所述的白光OLED器件，其中，所述白光OLED器件为蓝光黄光堆叠白光器件。
  8. 根据权利要求7所述的白光OLED器件，其中，所述反射层为厚度分别为
    Figure PCTCN2017094531-appb-100003
    和
    Figure PCTCN2017094531-appb-100004
    的Al:TiO2复合膜。
  9. 根据权利要求2所述的白光OLED器件，其中，所述反射层为由Al、Ag、SiO2、SiNx、TiOx、GaOx、a-Si中的任意一种形成的单层膜或至少两种形成的复合膜。
  10. 根据权利要求9所述的白光OLED器件，其中，所述反射层的厚度为
    Figure PCTCN2017094531-appb-100005
  11. 根据权利要求10所述的白光OLED器件，其中，所述白光 OLED器件为三原色白光器件。
  12. 根据权利要求11所述的白光OLED器件，其中，所述反射层为厚度为
    Figure PCTCN2017094531-appb-100006
    的Al膜。
  13. 根据权利要求10所述的白光OLED器件，其中，所述白光OLED器件为蓝光黄光堆叠白光器件。
  14. 根据权利要求13所述的白光OLED器件，其中，所述反射层为厚度分别为
    Figure PCTCN2017094531-appb-100007
    和
    Figure PCTCN2017094531-appb-100008
    的Al:TiO2复合膜。
  15. 根据权利要求1所述的白光OLED器件，其中，所述白光OLED器件还包括夹设在所述电子注入层和所述反射层之间的阴极。
PCT/CN2017/094531 2017-07-06 2017-07-26 一种白光oled器件 Ceased WO2019006793A1 (zh)

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