WO2019000904A1 - Oled显示基板及其制作方法、显示装置 - Google Patents

Oled显示基板及其制作方法、显示装置 Download PDF

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Publication number
WO2019000904A1
WO2019000904A1 PCT/CN2018/072084 CN2018072084W WO2019000904A1 WO 2019000904 A1 WO2019000904 A1 WO 2019000904A1 CN 2018072084 W CN2018072084 W CN 2018072084W WO 2019000904 A1 WO2019000904 A1 WO 2019000904A1
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Prior art keywords
layer
thin film
film transistor
transistor array
light
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PCT/CN2018/072084
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English (en)
French (fr)
Inventor
皇甫鲁江
樊星
王丹
许晓伟
李良坚
Original Assignee
京东方科技集团股份有限公司
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Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US16/092,895 priority Critical patent/US11387297B2/en
Priority to JP2019544619A priority patent/JP6935892B2/ja
Priority to EP18823282.1A priority patent/EP3648190A4/en
Publication of WO2019000904A1 publication Critical patent/WO2019000904A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the present disclosure relates to the field of display technologies, and in particular to an OLED display substrate, a method of fabricating the same, and a display device.
  • Each of the film layers constituting the OLED (Organic Electroluminescent Light Emitting Diode) device includes a material film layer such as an organic electroluminescence (OEL) layer, a transparent electrode, and a substrate, and these film layers have refractive indices higher than those of air. Due to total reflection, only the portion of the light emitted by the organic light-emitting layer that is incident at an angle smaller than the total reflection angle at each interface can be directly emitted.
  • a light-emitting point (or secondary light source point) can form a cone through the angle of the light direction emitted from the interface of each film layer, which is called an escape cone.
  • a Bottom Emission (BE) mode OLED device In a Bottom Emission (BE) mode OLED device, light rays with a direction of light within the exit cone can be directly emitted, and a portion of the light direction outside the exit cone will be totally reflected at different interfaces to the waveguide (Wave Guide).
  • the modes are transmitted in the corresponding film layers. The proportion of the light in these waveguide modes is often greater than that of the directly emitted light, which seriously affects the light-emitting efficiency of the OLED device.
  • the present disclosure provides an OLED display substrate, a manufacturing method thereof, and a display device, which can improve the light extraction efficiency of the OLED display device.
  • an OLED display substrate including a thin film transistor array layer, a first electrode, a pixel defining layer, an organic light emitting layer, and a second electrode on a substrate substrate, the pixels defining The layer defines a plurality of sub-pixel regions, and the surrounding sub-pixel region is provided with a reflective structure, and the reflective structure is capable of reflecting light emitted by the organic light-emitting layer outside the exit cone such that at least a portion of the light enters the exit cone.
  • a surrounding structure is formed around the sub-pixel region, the reflective structure being a reflective layer formed on a sidewall of the recess structure.
  • the recess structure is formed on the pixel defining layer, the recess structure having a depth no greater than a thickness of the pixel defining layer.
  • the surrounding sub-pixel region is formed with the thin film transistor array layer and a pixel defining layer on the thin film transistor array layer, and the recess structure is formed in a surrounding sub-pixel region.
  • a stacked structure of the thin film transistor array layer and the pixel defining layer, the groove structure having a depth greater than a thickness of the pixel defining layer and not greater than a thickness of the pixel defining layer and the thin film transistor array layer Sum.
  • the surrounding sub-pixel region is formed with the thin film transistor array layer and a pixel defining layer on the thin film transistor array layer, and the groove structure is formed in the surrounding sub-pixel region.
  • the stack structure of the base substrate, the thin film transistor array layer and the pixel defining layer has a depth greater than a sum of thicknesses of the thin film transistor array layer and the pixel defining layer And smaller than the sum of the thicknesses of the pixel defining layer, the thin film transistor array layer, and the base substrate.
  • the first electrode is a transparent electrode
  • the second electrode is a reflective metal electrode
  • the reflective layer and the second electrode are made of the same material.
  • the thin film transistor array layer is provided with an opening in the surrounding sub-pixel region, and the opening has a portion of the pixel defining layer.
  • the light reflecting layer includes a first portion at a first angle to the thin film transistor array layer and a second portion at a second angle to the pixel defining layer, The first angle is different from the second angle.
  • the light reflecting layer has a V-shaped or trapezoidal cross section in a direction perpendicular to its own extension.
  • Embodiments of the present disclosure also provide a display device including the display substrate as described above.
  • An embodiment of the present disclosure further provides a method for fabricating an OLED display substrate, comprising sequentially forming a thin film transistor array layer, a first electrode, a pixel defining layer, an organic light emitting layer, and a second electrode on a substrate, the pixel defining layer Defining a plurality of sub-pixel regions, the method further comprising: forming a reflective structure surrounding the sub-pixel region, the reflective structure capable of reflecting light emitted by the organic light-emitting layer outside the exit cone to cause at least a portion of the light to enter The exit cone.
  • forming the thin film transistor array layer further includes forming the thin film transistor array layer having an opening in the surrounding sub-pixel region.
  • forming the light reflecting structure includes forming a groove structure surrounding the sub-pixel region and forming a light reflecting layer on a sidewall of the groove structure.
  • forming the light reflecting layer includes forming the second electrode and the light reflecting layer by a single process.
  • forming the light reflecting layer includes: forming a first portion of the light reflecting layer at a first angle with the thin film transistor array layer and forming a second angle with the pixel defining layer a second portion of the reflective layer, the first angle being different from the second angle.
  • 1 is a schematic diagram of loss of light emitted by a bottom-emitting OLED display device
  • FIG. 2 is a schematic view showing light propagation from a bottom-emitting OLED display device
  • FIG. 3 is a schematic diagram of propagation and dissipation of light emitted by a bottom-emitting OLED display device
  • FIG. 4 is a schematic structural diagram of a OLED display substrate and a schematic diagram of light propagation in some alternative embodiments of the present disclosure
  • FIG. 5 is a schematic structural diagram of a OLED display substrate and a schematic diagram of light propagation according to some alternative embodiments of the present disclosure
  • FIG. 6 and FIG. 7 are schematic diagrams showing a manufacturing process of an OLED display substrate according to some optional embodiments of the present disclosure
  • FIG. 8 is a schematic structural diagram of a OLED display substrate and a light propagation diagram in some alternative embodiments of the present disclosure
  • 9-16 are schematic diagrams showing a manufacturing process of an OLED display substrate in some alternative embodiments of the present disclosure.
  • FIG. 17 is a schematic structural diagram of a OLED display substrate and a schematic diagram of light propagation in some alternative embodiments of the present disclosure
  • FIG. 18 is a schematic diagram of a manufacturing process of an OLED display substrate according to some optional embodiments of the present disclosure
  • FIG. 19 is a schematic structural diagram of a OLED display substrate and a light propagation diagram of some alternative embodiments of the present disclosure.
  • FIG. 20 to FIG. 21 are schematic structural diagrams and light propagation diagrams of an OLED display substrate according to another embodiment of the present disclosure.
  • the BE-mode OLED display device has a relatively complicated film structure.
  • PDL Pixel Defined Layer
  • the second OLED pixel structure further includes a thin film transistor array layer and an organic luminescent layer. The generated light also travels through the thin film transistor array layer.
  • the light emitted from the organic light-emitting layer 3 is also reflected at the interface between the substrate 1 and the air, and is also reflected at the interface between the transparent electrode 2 and the substrate 1. , further reducing the effective display of the emitted light.
  • the light emitted by the organic light-emitting layer 3 of the OLED display device of the BE mode only the light having an incident angle smaller than the total reflection angle (in the exit cone A) with respect to the set light direction may be Directly exit from the set light surface.
  • the light whose direction is outside the exit cone A will be transmitted by the waveguide mode light in each relevant film layer due to total reflection, and finally dissipated, including organic light-emitting layer/transparent electrode mode light, thin film transistor array layer mode light, and base substrate. Mode light, etc.
  • the transmission dissipation of the waveguide mode light reduces the light extraction efficiency of the OLED display device.
  • the embodiments of the present disclosure are directed to the above problems, and provide an OLED display substrate, a manufacturing method thereof, and a display device, which can improve the light extraction efficiency of the OLED display device.
  • a reflective structure is formed in a film layer structure such as a PDL layer and a thin film transistor array layer around the organic light emitting layer of the pixel, and the waveguide mode light propagating therein is intercepted and reflected and turned, and the gradient angle of the reflective surface is selected to make the The direction of the light of the reflected steering is directed to the set exit direction as a whole, wherein the direction of the partial light enters the angular range of the exit cone, and the off-waveguide mode exits in the effective direction of the display.
  • Embodiments of the present disclosure can significantly improve the light extraction efficiency of the BE mode OLED display device.
  • Embodiments of the present disclosure provide an OLED display substrate including a thin film transistor array layer, a first electrode, a pixel defining layer, an organic light emitting layer, and a second electrode on a substrate substrate, the pixel defining layer defining a plurality of sub-pixels a region, the surrounding sub-pixel region is provided with a reflective structure, and the reflective structure is capable of reflecting light emitted by the organic light-emitting layer outside the exit cone to cause at least a portion of the light to enter the exit cone.
  • the surrounding sub-pixel region is provided with a reflective structure, and the reflective structure can reflect the light emitted by the organic light-emitting layer outside the exit cone, so that at least a part of the light can enter the angular range of the exit cone, and the waveguide mode is effective for display.
  • the direction is emitted, so that the light extraction efficiency of the BE mode OLED display device can be significantly improved.
  • a surrounding structure is formed around the sub-pixel region, and the reflective structure is a light reflecting layer formed on a sidewall of the recess structure.
  • the groove structure is formed on the pixel defining layer, and the depth of the groove structure is not greater than a thickness of the pixel defining layer.
  • the thin film transistor array layer and the pixel defining layer on the thin film transistor array layer are formed around the sub-pixel region, and the recess structure is formed in the thin film transistor array surrounding the sub-pixel region
  • the layer structure and the pixel defining layer comprise a layer having a depth greater than a thickness of the pixel defining layer and no greater than a sum of thicknesses of the pixel defining layer and the thin film transistor array layer.
  • the thin film transistor array layer and the pixel defining layer on the thin film transistor array layer are formed around the sub-pixel region, and the recess structure is formed on the base substrate surrounding the sub-pixel region a stacked structure of the thin film transistor array layer and the pixel defining layer, the groove structure having a depth greater than a sum of thicknesses of the thin film transistor array layer and the pixel defining layer and smaller than the pixel definition The sum of the thickness of the layer, the thin film transistor array layer, and the base substrate.
  • the first electrode is a transparent electrode
  • the second electrode is a reflective metal electrode
  • the reflective layer and the second electrode are made of the same material, such that the reflective layer can be
  • the second electrode is simultaneously formed by the same photolithography process, and the number of photolithography processes for fabricating the display substrate can be reduced.
  • the thin film transistor array layer is provided with an opening in the surrounding sub-pixel region, and the opening has a portion of the pixel defining layer.
  • the light reflecting layer includes a first portion at a first angle to the thin film transistor array layer and a second portion at a second angle to the pixel defining layer, The first angle is different from the second angle.
  • the light reflecting layer has a V-shaped or trapezoidal cross section in a direction perpendicular to its own extending direction.
  • Embodiments of the present disclosure also provide a display device including the display substrate as described above.
  • the display device may be any product or component having a display function, such as a television, a display, a digital photo frame, a mobile phone, a tablet computer, etc., wherein the display device further includes a flexible circuit board, a printed circuit board, and a backboard.
  • An embodiment of the present disclosure further provides a method for fabricating an OLED display substrate, comprising sequentially forming a thin film transistor array layer, a first electrode, a pixel defining layer, an organic light emitting layer, and a second electrode on a substrate, the pixel defining layer Defining a plurality of sub-pixel regions, the method further comprising: forming a reflective structure surrounding the sub-pixel region, the reflective structure capable of reflecting light emitted by the organic light-emitting layer outside the exit cone to cause at least a portion of the light to enter Exit cone.
  • a reflective structure surrounding the sub-pixel region is formed, and the reflective structure can reflect the light emitted by the organic light-emitting layer outside the exit cone, so that at least a part of the light can enter the angular range of the exit cone, and the waveguide mode is effective for display.
  • the direction is emitted, so that the light extraction efficiency of the BE mode OLED display device can be significantly improved.
  • forming the thin film transistor array layer further includes forming the thin film transistor array layer having an opening around the sub-pixel region.
  • forming the light reflecting structure includes forming a groove structure surrounding the sub-pixel region and forming a light reflecting layer on a sidewall of the groove structure.
  • forming the light reflecting layer comprises: forming the second electrode and the light reflecting layer by a single process, which can reduce the number of photolithography processes for forming the display substrate.
  • forming the light reflecting layer includes: forming a first portion of the light reflecting layer at a first angle with the thin film transistor array layer and forming a second angle with the pixel defining layer a second portion of the reflective layer, the first angle being different from the second angle.
  • a groove structure is formed on the pixel defining layer 6 of the display substrate surrounding the sub-pixel region, and the depth of the groove structure may be equal to the thickness of the pixel defining layer 6.
  • a light reflecting layer 7 is formed on the sidewall of the groove structure, and the sidewall slope angle ⁇ of the groove structure is reflected and deflected by the waveguide mode light in the pixel defining layer, and as much as possible enters the exit cone A2 to become the exit mode light.
  • the principle is chosen.
  • the depth of the groove structure may also be larger or smaller than the thickness of the pixel defining layer 6, as will be discussed in the following embodiments.
  • the light emitted by the organic light-emitting layer 3 only in the exit cone A1 can be an exit mode light; after the reflective structure is prepared, part of the organic light-emitting layer/transparent electrode (ie, anode) mode light is first organic
  • the terminals of the luminescent layer 3 and the transparent electrode 2 enter the pixel defining layer 6, and then are transmitted to the reflective layer 7 in the pixel defining layer 6 to be reflected and steered, and the steered light enters the exit cone A2 to become the exit mode light, which can improve the OLED display device. Light extraction efficiency.
  • the pixel defining layer 6 is prepared on the base substrate 1.
  • the film defining layer 6 is formed in the peripheral region of the pixel opening region.
  • the groove structure, and then the organic light-emitting layer film layer can be formed in a conventional process, and the light-reflecting layer 7 is formed on the sidewall of the groove structure while the reflective electrode (ie, the cathode) is formed.
  • a pixel defining layer 6 directly on the substrate substrate 1 is formed between adjacent sub-pixel regions, and a thin film transistor array layer 5 is not disposed in the sub-pixel peripheral region.
  • a groove structure is formed on the pixel defining layer 6 of the pixel region, and the depth of the groove structure is equal to the thickness of the pixel defining layer 6.
  • a reflective layer 7 is formed on the sidewall of the groove structure. The sidewall slope angle ⁇ of the groove structure is reflected by the waveguide mode in the pixel, and as much as possible enters the exit cone A2 to become the exit mode light. Principle selection.
  • the display substrate of this embodiment has no thin film transistor array layer mode light, and the waveguide mode light has only organic light emitting layer/transparent electrode mode light and substrate substrate mode light. If the reflective structure is not prepared, the light emitted by the organic light-emitting layer 3 only in the exit cone A1 can be the exit mode light.
  • the organic light-emitting layer/transparent electrode mode light is first at the end of the organic light-emitting layer 3 and
  • the transparent electrode 1 (ie, the anode) terminal enters the pixel defining layer 6, and then is transmitted to the reflective layer 7 in the pixel defining layer 6 to be reflected and turned, and the turned part of the light enters the exit cone A2 to become the exit mode light, which can improve the light output of the OLED display device. effectiveness.
  • the photolithography process is added to remove the thin film transistor array layer 5 in the peripheral region of the sub-pixel.
  • the thin film transistor array layer 5 of the sub-pixel peripheral region may be synchronously removed by using the last or several photolithography processes (usually a photolithography process of via fabrication) of the display substrate, and then the pixel defining layer 6 and the upper portion thereof are formed according to a conventional process flow. Other layers.
  • a surrounding pixel region is formed with a pixel defining layer 6 on the substrate substrate 1, and a sub-pixel peripheral region is further provided with a thin film transistor array layer 5, and pixels surrounding the sub-pixel region.
  • the stacked structure composed of the defining layer 6 and the thin film transistor array layer 5 is formed with a groove structure having a depth equal to the sum of the thicknesses of the pixel defining layer 6 and the thin film transistor array layer 5.
  • the layer and thin film transistor array layer waveguide mode light is reflected and turned, as many parts as possible enter the exit cones A2 and A3, which becomes the principle of the exit mode light.
  • the distribution of the waveguide mode light in the film layer and the optical properties of the material may be respectively taken.
  • the propagation of the waveguide light in the planar waveguide is similar to the wave-type reflection propagation at the upper and lower interfaces, so the angle when projecting to the reflective surface is not horizontal, but has a certain elevation and elevation angle.
  • the specific numerical values of ⁇ 1 and ⁇ 2 can be calculated by a geometric formula according to the pitch angle, the wavelength of different light, the thickness of the waveguide, the waveguide medium and the wave loss of the adjacent medium reflection surface, generally less than or equal to 45. degree.
  • ⁇ 1 may be 30 to 35 degrees.
  • the light emitted by the organic light-emitting layer 3 only in the exit cone A1 can be the exit mode light.
  • the organic light-emitting layer/transparent electrode mode light is first at the end of the organic light-emitting layer 3 and The transparent electrode 1 (ie, the anode) terminal enters the pixel defining layer 6, and then is transmitted to the reflective layer 7 in the pixel defining layer 6 to be reflected and turned, and the turned part of the light enters the exit cone A2 to become the exit mode light.
  • the thin film transistor array layer The waveguide mode light in the fifth mode is transmitted to the light reflecting layer 7 and is reflected and turned. After the steering, the light enters the exit cone A3 to become the exit mode light, thereby improving the light extraction efficiency of the OLED display device.
  • the thin film transistor array layer 5 is first formed on the base substrate 1.
  • a photolithography process is added after the thin film transistor array layer 5 process is completed to remove the pixel light emission.
  • the thin film transistor array layer 5 around the region can also be used to simultaneously remove the thin film transistor array layer 5 of the corresponding region by using the display substrate fabrication process for the last time or several photolithography processes (usually via fabrication); as shown in FIG.
  • the thin film transistor array layer on the outer periphery of the pixel light emitting region is removed by using the pixel defining layer 6 and the transparent electrode 2 as a mask to increase the etching process. 5.
  • the groove structure of the pixel defining layer 6 and the groove structure of the thin film transistor array layer 5 are self-aligned, which is advantageous for the overall control of the shape of the reflective interface and the improvement of the reflective characteristics.
  • the organic light-emitting layer 3 can be formed by printing or evaporation; as shown in FIG. 16, the entire layer is vapor-deposited, and the reflective electrode 4 is formed at the same time.
  • a thin film transistor array layer 5 on the substrate substrate and a pixel defining layer 6 on the thin film transistor array layer 5 are formed around the sub-pixel region, and the recess structure is formed in On the laminated structure composed of the base substrate 1, the thin film transistor array layer 5, and the pixel defining layer 6 surrounding the sub-pixel region, the depth of the groove structure is equal to the pixel defining layer 6, the thin film transistor array layer 5, and the portion of the substrate substrate 1. The sum of the thicknesses, that is, the groove structure, extends to a certain depth in the base substrate 1.
  • a light reflecting layer 7 is formed on the sidewall of the groove structure, the groove structure corresponds to the sidewall slope angle of the pixel defining layer 6 portion, the sidewall structure slope angle corresponding to the portion of the thin film transistor array layer 5, and the groove structure corresponding substrate
  • the sidewall slope angle of the portion of the substrate 1 is deflected by the reflection of the waveguide mode in the pixel defining layer, the substrate substrate and the thin film transistor array layer, and as much as possible enters the exit cones A2 and A3 to become the principle of the exit mode light.
  • the distribution of the waveguide mode light in the film layer and the optical properties of the material may be respectively taken.
  • the slope of the bottom end of the sidewall of the thin film transistor array layer 5 relative to the surface of the substrate substrate 1 is difficult to be consistent with the main portion of the sidewall of the recess structure, and a transitional arc surface is easily formed. Therefore, extending the groove structure into the substrate substrate is advantageous for maintaining the uniformity of the light reflecting layer 7 on the sidewall of the entire groove structure, and ensuring a reflective effect.
  • the light-reflecting layer 7 extending into the portion of the base substrate 1 can also perform a reflective steering effect on the waveguide mode light of the partial substrate substrate mode, and has an effect of increasing the emitted light.
  • the thin film transistor array layer 5 is used as a mask to increase the substrate substrate etching process to extend the recess structure into the substrate substrate 1.
  • a pixel defining layer 6 on the substrate substrate 1 is formed around the sub-pixel region, and a thin film transistor array layer 5 is disposed around the sub-pixel region, and pixels surrounding the sub-pixel region are formed.
  • a groove structure is formed on the defining layer 6, and the depth of the groove structure is equal to the sum of the thicknesses of the pixel defining layer 6 and the thin film transistor array layer 5.
  • a reflective layer 7 is formed on the sidewall of the groove structure. The sidewall slope angle of the groove structure is reflected by the pixel-defined layer and the waveguide mode of the thin film transistor array layer, and as much as possible enters the exit cones A2 and A3. , to become the principle of the choice of the exit mode light. Specifically, the distribution of the waveguide mode light in the film layer and the optical properties of the material (mainly the refractive index) may be respectively taken.
  • the light emitted by the organic light-emitting layer 3 only in the exit cone A1 can be the exit mode light.
  • the organic light-emitting layer/transparent electrode mode light is first at the end of the organic light-emitting layer 3 and The transparent electrode 1 (ie, the anode) terminal enters the pixel defining layer 6, and then is transmitted to the reflective layer 7 in the pixel defining layer 6 to be reflected and turned, and the turned part of the light enters the exit cone A2 to become the exit mode light.
  • the thin film transistor array layer The waveguide mode light in the fifth mode is transmitted to the light reflecting layer 7 and is reflected and turned. After the steering, the light enters the exit cone A3 to become the exit mode light, thereby improving the light extraction efficiency of the OLED display device.
  • a photolithography process is added to remove the thin film transistor array layer 5 surrounding the sub-pixel region.
  • the thin film transistor array layer 5 surrounding the sub-pixel region can also be synchronously removed by using the last or several photolithography processes of the display substrate (usually a photolithography process for via fabrication), and then the pixel defining layer 6 and the upper portion thereof are formed according to a conventional process flow.
  • Other layers are used to describe the thin film transistor array layer 5 surrounding the sub-pixel region.
  • the organic light-emitting layers of the display substrate in the above embodiments of the present disclosure are all localized film layers separated by (sub)pixels, and can be realized by FMM (Fine Metal Mask) evaporation or printing. Under the current technical conditions, due to the cost and yield of the mainstream FMM evaporation process, it is inclined to avoid the pattern-aligned vapor deposition that requires FMM process technology.
  • FMM Fe Metal Mask
  • the organic light-emitting layer is formed by a local pattern in which (sub)pixels are aligned, as shown in FIG. 20 and FIG. 21, and the entire display region is integrally vapor-deposited to form an integral film layer.
  • the electron and hole injection layer and the transport layer are integrally vapor-deposited, but the organic light-emitting material layers of different color sub-pixels are respectively sub-pixel aligned by FMM technology to form a local pattern film layer, as shown in FIG. 21, only pixels.
  • the pixel opening region defined by the defining layer 6 has a current (a black line in the organic light-emitting layer 3) through the light.
  • the overall organic film layer in the above two cases will be deposited on the sidewall of the groove structure in the pixel defining layer 6 or the pixel defining layer 6 + the thin film transistor array layer 5 before the light reflecting layer 7 in the process flow, so that Strictly speaking, the reflective interface on the sidewall is not the interface of the reflective layer 7 with the pixel defining layer 6 or the thin film transistor array layer 5, but the interface of the organic light-emitting layer 3 and the light-reflecting layer 7 at the sidewall position. Since the organic light-emitting layer 3 is transparent and the refractive index is close to the pixel defining layer 6, there is no optical difference between the embodiment and the embodiment of the present disclosure, and therefore, no particular description is given.
  • the inverted BE mode OLED device that is, in order from the substrate substrate upward, the transparent cathode, the organic light-emitting layer (which may be a plurality of layers), and the reflective anode.
  • the reverse device process is immature.
  • the main problem is that the cathode (using ITO) has a damage to the organic light-emitting layer by the sputtering process, so it has not been applied in mass production.
  • the reverse device technology is mature, for the BE mode reverse bottom emission OLED display, the light emitting layer described in the present disclosure can also be formed synchronously with the reflective anode using the same photolithography process.

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Abstract

一种OLED显示基板及其制作方法、显示装置。其中，OLED显示基板包括位于衬底基板（1）上的薄膜晶体管阵列层（5）、第一电极（2）、像素界定层（6）、有机发光层（3）和第二电极（4），像素界定层限定出多个亚像素区域，环绕亚像素区域设置有反光结构（7），反光结构能够反射有机发光层发出的位于出射锥（A1）外的光线，使至少部分光线进入出射锥（A2）。

Description

OLED显示基板及其制作方法、显示装置
相关申请的交叉引用
本申请主张在2017年6月30日在中国提交的中国专利申请号No.201710524515.5的优先权，其全部内容通过引用包含于此。
技术领域
本公开涉及显示技术领域，特别是指一种OLED显示基板及其制作方法、显示装置。
背景技术
构成OLED(有机电致发光二极管)器件的各膜层包括有机发光(organic Electroluminescence，OEL)层、透明电极和基板等材料膜层，这些膜层的折射率均高于空气的折射率。由于全反射原因，有机发光层发出的光线中只有在设定出光方向上各界面入射角小于全反射角的部分可以直接出射。某一发光点(或次级光源点)可以经过各膜层界面出射的光线方向角度构成一个锥形，被称为出射锥(escape cone)。在底发射(Bottom Emission，BE)模式的OLED器件中，光线方向在出射锥以内的光线可以直接出射，光线方向在出射锥以外的部分会在不同的界面发生全反射，以波导(Wave Guide)模式在相应膜层中传输，这些波导模式的光线的比例经常会大于直接出射的光线，严重影响了OLED器件的出光效率的提升。
发明内容
本公开提供了一种OLED显示基板及其制作方法、显示装置，能够提高OLED显示装置的出光效率。
一方面，本公开在至少一个实施例中提供一种OLED显示基板，包括位于衬底基板上的薄膜晶体管阵列层、第一电极、像素界定层、有机发光层和第二电极，所述像素界定层限定出多个亚像素区域，环绕亚像素区域设置有反光结构，所述反光结构能够反射所述有机发光层发出的位于出射锥外的光 线，使至少部分所述光线进入所述出射锥。
在一些可选的实施例中，环绕亚像素区域形成有凹槽结构，所述反光结构为形成在所述凹槽结构的侧壁上的反光层。
在一些可选的实施例中，所述凹槽结构形成在所述像素界定层上，所述凹槽结构的深度不大于所述像素界定层的厚度。
在一些可选的实施例中，所述环绕亚像素区域形成有所述薄膜晶体管阵列层和位于所述薄膜晶体管阵列层上的像素界定层，所述凹槽结构形成在环绕亚像素区域的所述薄膜晶体管阵列层和所述像素界定层组成的叠层结构上，所述凹槽结构的深度大于所述像素界定层的厚度且不大于所述像素界定层和所述薄膜晶体管阵列层的厚度之和。
在一些可选的实施例中，所述环绕亚像素区域形成有所述薄膜晶体管阵列层和位于所述薄膜晶体管阵列层上的像素界定层，所述凹槽结构形成在所述环绕亚像素区域的所述衬底基板、所述薄膜晶体管阵列层和所述像素界定层组成的叠层结构上，所述凹槽结构的深度大于所述薄膜晶体管阵列层和所述像素界定层的厚度之和且小于所述像素界定层、所述薄膜晶体管阵列层和所述衬底基板的厚度之和。
在一些可选的实施例中，所述第一电极为透明电极，所述第二电极为反光金属电极，所述反光层与所述第二电极采用相同的材料制成。
在一些可选的实施例中，所述薄膜晶体管阵列层在所述环绕亚像素区域设置有开口，所述开口中具有部分所述像素界定层。
在一些可选的实施例中，所述反光层包括与所述薄膜晶体管阵列层之间成第一角度的第一部分和与所述像素界定层之间成第二角度的第二部分，所述第一角度与所述第二角度不同。
在一些可选的实施例中，所述反光层在垂直于其自身延伸方向上的截面为V字形或梯形。
本公开实施例还提供了一种显示装置，包括如上所述的显示基板。
本公开实施例还提供了一种OLED显示基板的制作方法，包括在衬底基板上依次形成薄膜晶体管阵列层、第一电极、像素界定层、有机发光层和第二电极，所述像素界定层限定出多个亚像素区域，所述方法还包括：形成环 绕亚像素区域的反光结构，所述反光结构能够反射所述有机发光层发出的位于出射锥外的光线，使至少部分所述光线进入所述出射锥。
在一些可选的实施例中，形成所述薄膜晶体管阵列层还包括：形成在所述环绕亚像素区域具有开口的所述薄膜晶体管阵列层。
在一些可选的实施例中，形成所述反光结构包括：形成所述环绕亚像素区域的凹槽结构，并在所述凹槽结构的侧壁上形成反光层。
在一些可选的实施例中，形成所述反光层包括：通过一次工艺形成所述第二电极和所述反光层。
在一些可选的实施例中，形成所述反光层包括：形成与所述薄膜晶体管阵列层之间成第一角度的反光层的第一部分和与所述像素界定层之间成第二角度的反光层的第二部分，所述第一角度与所述第二角度不同。
附图说明
图1为底发射OLED显示器件发出的光的损耗示意图；
图2为底发射OLED显示器件发出的光在内部传播的示意图；
图3为底发射OLED显示器件发出的光的传播和耗散的示意图；
图4为本公开一些可选的实施例中OLED显示基板的结构示意图和光线传播示意图；
图5为本公开一些可选的实施例中OLED显示基板的结构示意图和光线传播示意图；
图6和图7为本公开一些可选的实施例中OLED显示基板的制作流程示意图；
图8为本公开一些可选的实施例中OLED显示基板的结构示意图和光线传播示意图；
图9-图16为本公开一些可选的实施例中OLED显示基板的制作流程示意图；
图17为本公开一些可选的实施例中OLED显示基板的结构示意图和光线传播示意图；图18为本公开一些可选的实施例中OLED显示基板的制作流程示意图；
图19为本公开一些可选的实施例中OLED显示基板的结构示意图和光线传播示意图；
图20-图21为本公开另一实施方式OLED显示基板的结构示意图和光线传播示意图。
附图标记
1衬底基板 2透明电极 3有机发光层 4反光金属电极
5薄膜晶体管阵列层 6像素界定层 7反光层
A、A1、A2、A3出射锥
具体实施方式
为使本公开的实施例要解决的技术问题、技术方案和优点更加清楚，下面将结合附图及具体实施例进行详细描述。
BE模式OLED显示器件相关膜层结构相对复杂，首先在像素周边会有限定像素发光区的像素限定层(Pixel Define Layer,PDL)。PDL对应区域没有电流通过因此不发光。由于PDL材料折射率通常与OELD发光材料接近，有机发光层产生的光会在有机发光层和透明电极膜层的终端进入PDL层传播；其次OLED像素结构中还包括薄膜晶体管阵列层，有机发光层产生的光还会进入薄膜晶体管阵列层中传播。这些光线在PDL层、薄膜晶体管阵列层的传输过程中会发生损耗，不能成为有效显示出射光线。由图1和图2可以看出，有机发光层3发出的光还会在衬底基板1与空气之间的界面发生反射，还会在透明电极2与衬底基板1之间的界面发生反射，进一步减小了有效显示出射光线。
如图2和图3所示，BE模式的OLED显示器件有机发光层3发出的光线中，只有相对于设定出光方向上各界面入射角小于全反射角(在出射锥A内)的光线可以从设定出光面直接出射。方向在出射锥A之外的光线因全反射原因会成为波导模式光在各相关膜层内传输并最终耗散，包括有机发光层/透明电极模式光、薄膜晶体管阵列层模式光、衬底基板模式光等。波导模式光的传输耗散降低了OLED显示器件的出光效率。
本公开的实施例针对上述问题，提供一种OLED显示基板及其制作方法、 显示装置，能够提高OLED显示装置的出光效率。
本公开实施例在像素的有机发光层周边的PDL层、薄膜晶体管阵列层等膜层结构中制作反光结构，截取在其中传播的波导模式光线并反射转向，通过选取反光面的坡度角，使经反射转向的光线方向整体上指向设定的出射方向，其中部分光线的方向进入出射锥的角度范围，脱离波导模式向显示有效方向出射。本公开实施例可以显著地提高BE模式的OLED显示器件的出光效率。
本公开实施例提供一种OLED显示基板，包括位于衬底基板上的薄膜晶体管阵列层、第一电极、像素界定层、有机发光层和第二电极，所述像素界定层限定出多个亚像素区域，环绕亚像素区域设置有反光结构，所述反光结构能够反射所述有机发光层发出的位于出射锥外的光线，使至少部分所述光线进入出射锥。
本实施例中，环绕亚像素区域设置有反光结构，反光结构能够反射有机发光层发出的位于出射锥外的光线，使得其中的至少一部分光线能够进入出射锥的角度范围，脱离波导模式向显示有效方向出射，从而可以显著地提高BE模式OLED显示装置的出光效率。
具体地，环绕亚像素区域形成有凹槽结构，所述反光结构为形成在所述凹槽结构的侧壁上的反光层。
一具体实施例中，所述凹槽结构形成在所述像素界定层上，所述凹槽结构的深度不大于所述像素界定层的厚度。
另一具体实施例中，环绕亚像素区域形成有所述薄膜晶体管阵列层和位于所述薄膜晶体管阵列层上的像素界定层，所述凹槽结构形成在环绕亚像素区域的所述薄膜晶体管阵列层和所述像素界定层组成的叠层结构上，所述凹槽结构的深度大于所述像素界定层的厚度且不大于所述像素界定层和所述薄膜晶体管阵列层的厚度之和。
另一具体实施例中，环绕亚像素区域形成有所述薄膜晶体管阵列层和位于所述薄膜晶体管阵列层上的像素界定层，所述凹槽结构形成在环绕亚像素区域的所述衬底基板、所述薄膜晶体管阵列层和所述像素界定层组成的叠层结构上，所述凹槽结构的深度大于所述薄膜晶体管阵列层和所述像素界定层 的厚度之和且小于所述像素界定层、所述薄膜晶体管阵列层和所述衬底基板的厚度之和。
在一些可选的实施例中，所述第一电极为透明电极，所述第二电极为反光金属电极，所述反光层与所述第二电极采用相同的材料制成，这样反光层可以与第二电极通过同一次光刻工艺同时形成，能够减少制作显示基板的光刻工艺次数。
在一些可选的实施例中，所述薄膜晶体管阵列层在环绕亚像素区域设置有开口，所述开口中具有部分所述像素界定层。
在一些可选的实施例中，所述反光层包括与所述薄膜晶体管阵列层之间成第一角度的第一部分和与所述像素界定层之间成第二角度的第二部分，所述第一角度与所述第二角度不同。
具体地，所述反光层在垂直于其自身延伸方向上的截面为V字形或梯形。
本公开实施例还提供了一种显示装置，包括如上所述的显示基板。所述显示装置可以为：电视、显示器、数码相框、手机、平板电脑等任何具有显示功能的产品或部件，其中，所述显示装置还包括柔性电路板、印刷电路板和背板。
本公开实施例还提供了一种OLED显示基板的制作方法，包括在衬底基板上依次形成薄膜晶体管阵列层、第一电极、像素界定层、有机发光层和第二电极，所述像素界定层限定出多个亚像素区域，所述方法还包括：形成环绕亚像素区域的反光结构，所述反光结构能够反射所述有机发光层发出的位于出射锥外的光线，使至少部分所述光线进入出射锥。
本实施例中，形成环绕亚像素区域的反光结构，反光结构能够反射有机发光层发出的位于出射锥外的光线，使得其中的至少一部分光线能够进入出射锥的角度范围，脱离波导模式向显示有效方向出射，从而可以显著地提高BE模式OLED显示装置的出光效率。
在一些可选的实施例中，形成所述薄膜晶体管阵列层还包括：形成在环绕亚像素区域具有开口的所述薄膜晶体管阵列层。
在一些可选的实施例中，形成所述反光结构包括：形成环绕亚像素区域的凹槽结构，并在所述凹槽结构的侧壁上形成反光层。
在一些可选的实施例中，形成所述反光层包括：通过一次工艺形成所述第二电极和所述反光层，这样能够减少制作显示基板的光刻工艺次数。
在一些可选的实施例中，形成所述反光层包括：形成与所述薄膜晶体管阵列层之间成第一角度的反光层的第一部分和与所述像素界定层之间成第二角度的反光层的第二部分，所述第一角度与所述第二角度不同。
下面结合附图对本公开的技术方案进行具体介绍。
一些可选的实施例中，如图4所示，在显示基板环绕亚像素区域的像素界定层6上形成有凹槽结构，凹槽结构的深度可以等于像素界定层6的厚度。在凹槽结构的侧壁上形成有反光层7，凹槽结构的侧壁坡度角θ按像素界定层内波导模式光经反射转向后，尽可能多的部分进入出射锥A2，成为出射模式光的原理选取。这里，凹槽结构的深度也可以大于或者小于像素界定层6的厚度，详见后面实施例的讨论。
若不制备反光结构，则有机发光层3发出的光线仅位于出射锥A1内的光线能够成为出射模式光；在制备反光结构后，部分有机发光层/透明电极(即阳极)模式光首先在有机发光层3和透明电极2的终端进入像素界定层6，然后在像素界定层6内传输至反光层7经反射转向，转向后部分光线进入出射锥A2成为出射模式光，可以提高OLED显示器件的出光效率。
在制作显示基板时，在衬底基板1上制备像素界定层6，通过光刻工艺形成像素界定层6限定出的像素开口区域时，同步在像素开口区域周边区域的像素界定层6膜层形成凹槽结构，随后可按常规工艺制作有机发光层膜层，在制作反光电极(即阴极)的同时在凹槽结构侧壁形成反光层7。
一些可选的实施例中，如图5所示，相邻亚像素区域之间形成有直接位于衬底基板1上的像素界定层6，亚像素周边区域未设置薄膜晶体管阵列层5，环绕亚像素区域的像素界定层6上形成有凹槽结构，凹槽结构的深度等于像素界定层6的厚度。凹槽结构的侧壁上形成有反光层7，凹槽结构的侧壁坡度角θ按像素界定层内波导模式光经反射转向后，尽可能多的部分进入出射锥A2，成为出射模式光的原理选取。
本实施例的显示基板无薄膜晶体管阵列层模式光，波导模式光只有有机发光层/透明电极模式光和衬底基板模式光。若不制备反光结构，则有机发光 层3发出的光线仅位于出射锥A1内的光线能够成为出射模式光，在制备反光结构后，有机发光层/透明电极模式光首先在有机发光层3终端和透明电极1(即阳极)终端进入像素界定层6，然后在像素界定层6内传输至反光层7经反射转向，转向后部分光线进入出射锥A2成为出射模式光，可以提高OLED显示器件的出光效率。
如图6和图7所示，本实施例在衬底基板1上形成薄膜晶体管阵列层5后，增加一次光刻工艺，去除亚像素周边区域的薄膜晶体管阵列层5。也可以利用显示基板最后一次或几次光刻工艺(通常是过孔制作的光刻工艺)同步去除亚像素周边区域的薄膜晶体管阵列层5，然后按常规工艺流程形成像素界定层6及其上的其他膜层。
一些可选的实施例中，如图8所示，环绕亚像素区域形成有位于衬底基板1上的像素界定层6，亚像素周边区域还设置薄膜晶体管阵列层5，环绕亚像素区域的像素界定层6和薄膜晶体管阵列层5组成的叠层结构上形成有凹槽结构，凹槽结构的深度等于像素界定层6和薄膜晶体管阵列层5的厚度之和。凹槽结构的侧壁上形成有反光层7，凹槽结构对应像素界定层6部分的侧壁坡度角θ 1、凹槽结构对应薄膜晶体管阵列层5部分的侧壁坡度角θ 2按像素界定层和薄膜晶体管阵列层内波导模式光经反射转向后，尽可能多的部分进入出射锥A2和A3，成为出射模式光的原理选取。具体可以根据膜层内波导模式光的分布和材料的光学特性(主要是折射率)分别取值。这里需要指出的是，波导光线在平面波导的传播是在上下两个界面呈类似于波浪型反射传播的，因此投射到反光面时的角度不是水平的，而是有一定的仰、俯角度。这里，θ1、θ2的具体数值本领域技术人员可以根据仰俯角度、不同的光的波长、波导厚度、波导介质和相邻介质反射面波损等参数利用几何公式计算得出，一般小于等于45度。例如，在PDL层中，θ1可以为30～35度。
若不制备反光结构，则有机发光层3发出的光线仅位于出射锥A1内的光线能够成为出射模式光，在制备反光结构后，有机发光层/透明电极模式光首先在有机发光层3终端和透明电极1(即阳极)终端进入像素界定层6，然后在像素界定层6内传输至反光层7经反射转向，转向后部分光线进入出射锥A2成为出射模式光，同样地，薄膜晶体管阵列层5中的波导模式光传输 至反光层7经反射转向，转向后部分光线进入出射锥A3成为出射模式光，从而可以提高OLED显示器件的出光效率。
如图9所示，在制作显示基板时，首先在衬底基板1上形成薄膜晶体管阵列层5；如图10所示，在薄膜晶体管阵列层5工艺完成后增加一次光刻工艺，去除像素发光区域周边的薄膜晶体管阵列层5，也可以利用显示基板制作工艺最后一次或几次光刻工艺(通常是过孔制作)同步去除相应区域的薄膜晶体管阵列层5；如图11所示，之后形成透明电极2；如图12所示，通过光刻工艺形成像素界定层6的图形。
如图13和图14所示，还可以在像素界定层6的凹槽结构形成后，利用像素界定层6和透明电极2作为掩膜增加刻蚀工艺去除像素发光区外周边的薄膜晶体管阵列层5，采用这种方法像素界定层6的凹槽结构和薄膜晶体管阵列层5的凹槽结构自行对准，有利于反光界面形状的整体控制和反光特性的改善。
如图15所示，之后在像素发光区形成有机发光层3，可以通过打印或蒸镀的方式形成有机发光层3；如图16所示，整层蒸镀反光金属，同时形成反光电极4和反光层7，落入凹槽结构侧壁上的反光金属自然形成反光层7。
一些可选的实施例中，如图17所示，环绕亚像素区域形成有位于衬底基板上的薄膜晶体管阵列层5和位于薄膜晶体管阵列层5上的像素界定层6，凹槽结构形成在环绕亚像素区域的衬底基板1、薄膜晶体管阵列层5和像素界定层6组成的叠层结构上，凹槽结构的深度等于像素界定层6、薄膜晶体管阵列层5和部分衬底基板1的厚度之和，即凹槽结构延伸至衬底基板1内一定深度。凹槽结构的侧壁上形成有反光层7，凹槽结构对应像素界定层6部分的侧壁坡度角、凹槽结构对应薄膜晶体管阵列层5部分的侧壁坡度角、凹槽结构对应衬底基板1部分的侧壁坡度角按像素界定层、衬底基板和薄膜晶体管阵列层内波导模式光经反射转向后，尽可能多的部分进入出射锥A2和A3，成为出射模式光的原理选取。具体可以根据膜层内波导模式光的分布和材料的光学特性(主要是折射率)分别取值。
考虑到刻蚀工艺的特点，在薄膜晶体管阵列层5侧壁的底端相对于衬底基板1表面的坡度，很难与凹槽结构侧壁的主体部分保持一致，而容易形成 一个过渡弧面，因此将凹槽结构延伸至衬底基板内有利于保持整个凹槽结构侧壁上反光层7的一致性，确保反光效果。另外，延伸进入衬底基板1部分的反光层7还可以对部分衬底基板模式的波导模式光起反射转向作用，有增加出射光的作用。
如图18所示，在去除部分薄膜晶体管阵列层5的刻蚀工艺后，以薄膜晶体管阵列层5作为掩膜，增加衬底基板刻蚀工艺，使凹槽结构延伸入衬底基板1。
一些可选的实施例中，如图19所示，环绕亚像素区域形成有位于衬底基板1上的像素界定层6，环绕亚像素区域未设置薄膜晶体管阵列层5，环绕亚像素区域的像素界定层6上形成有凹槽结构，凹槽结构的深度等于像素界定层6和薄膜晶体管阵列层5的厚度之和。凹槽结构的侧壁上形成有反光层7，凹槽结构的侧壁坡度角按像素界定层和薄膜晶体管阵列层内波导模式光经反射转向后，尽可能多的部分进入出射锥A2和A3，成为出射模式光的原理选取。具体可以根据膜层内波导模式光的分布和材料的光学特性(主要是折射率)分别取值。
若不制备反光结构，则有机发光层3发出的光线仅位于出射锥A1内的光线能够成为出射模式光，在制备反光结构后，有机发光层/透明电极模式光首先在有机发光层3终端和透明电极1(即阳极)终端进入像素界定层6，然后在像素界定层6内传输至反光层7经反射转向，转向后部分光线进入出射锥A2成为出射模式光，同样地，薄膜晶体管阵列层5中的波导模式光传输至反光层7经反射转向，转向后部分光线进入出射锥A3成为出射模式光，从而可以提高OLED显示器件的出光效率。
本实施例在衬底基板1上形成薄膜晶体管阵列层5后，增加一次光刻工艺，去除环绕亚像素区域的薄膜晶体管阵列层5。也可以利用显示基板最后一次或几次光刻工艺(通常是过孔制作的光刻工艺)同步去除环绕亚像素区域的薄膜晶体管阵列层5，然后按常规工艺流程形成像素界定层6及其上的其他膜层。
本公开上述实施例中的显示基板的有机发光层都是按(子)像素分立的局域膜层，可以通过FMM(精细金属掩模板)蒸镀或打印方式实现。在现有 技术条件下，由于主流FMM蒸镀工艺成本和良率问题，倾向于尽量避免需要FMM工艺技术的图形化对位蒸镀。
还有一种方式是仅部分有机发光层采用按(子)像素对准的局域图形制作膜层，如图20和图21所示，其余为整个显示区域一体蒸镀制作整体膜层。电子和空穴的注入层和传输层一体蒸镀，但不同颜色子像素的有机发光材料层则利用FMM技术按子像素对准分别制作局域图形的膜层，如图21所示，仅像素界定层6限定出的像素开口区域有电流(有机发光层3中的黑线)通过发光。
以上两种情况中的整体有机膜层在工艺流程上会先于反光层7淀积于像素界定层6或像素界定层6+薄膜晶体管阵列层5的中的凹槽结构的侧壁上，这样严格地讲，侧壁上的反射界面就不是反光层7与像素界定层6或薄膜晶体管阵列层5的界面，而是侧壁位置的有机发光层3和反光层7的界面。由于有机发光层3透明且折射率与像素界定层6接近，因此在适用本公开技术方面与所举实施例在光学上并没有差异，故不作特别说明。
对于逆向(inverted)BE模式的OLED器件来说，即按从衬底基板向上的顺序来说，依次是透明阴极，有机发光层(可以为多层)，反光阳极。目前逆向器件工艺上不成熟，主要问题是阴极(多采用ITO)采用溅射工艺成膜过程对有机发光层存在损伤，因此尚未在量产中应用。如果逆向器件技术成熟，则对于BE模式的逆向底发射OLED显示器来说，本公开中所述的发光层也可以和反光阳极采用同一次光刻工艺同步形成。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
可以理解，当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时，该元件可以“直接”位于另一元件“上”或“下”，或者可以存在中间元件。
以上所述是本公开的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本公开所述原理的前提下，还可以作出若干改进和润饰，这些改进和润饰也应视为本公开的保护范围。

Claims (15)

  1. 一种OLED显示基板，包括位于衬底基板上的薄膜晶体管阵列层、第一电极、像素界定层、有机发光层和第二电极，所述像素界定层限定出多个亚像素区域，其中，环绕亚像素区域设置有反光结构，所述反光结构能够反射所述有机发光层发出的位于出射锥外的光线，使至少部分所述光线进入所述出射锥。
  2. 根据权利要求1所述的OLED显示基板，其中，环绕亚像素区域形成有凹槽结构，所述反光结构为形成在所述凹槽结构的侧壁上的反光层。
  3. 根据权利要求2所述的OLED显示基板，其中，所述凹槽结构形成在所述像素界定层上，所述凹槽结构的深度不大于所述像素界定层的厚度。
  4. 根据权利要求2所述的OLED显示基板，其中，所述环绕亚像素区域形成有所述薄膜晶体管阵列层和位于所述薄膜晶体管阵列层上的像素界定层，所述凹槽结构形成在环绕亚像素区域的所述薄膜晶体管阵列层和所述像素界定层组成的叠层结构中，所述凹槽结构的深度大于所述像素界定层的厚度且不大于所述像素界定层和所述薄膜晶体管阵列层的厚度之和。
  5. 根据权利要求2所述的OLED显示基板，其中，所述环绕亚像素区域形成有所述薄膜晶体管阵列层和位于所述薄膜晶体管阵列层上的像素界定层，所述凹槽结构形成在所述环绕亚像素区域的所述衬底基板、所述薄膜晶体管阵列层和所述像素界定层组成的叠层结构中，所述凹槽结构的深度大于所述薄膜晶体管阵列层和所述像素界定层的厚度之和且小于所述像素界定层、所述薄膜晶体管阵列层和所述衬底基板的厚度之和。
  6. 根据权利要求2-5中任一项所述的OLED显示基板，其中，所述第一电极为透明电极，所述第二电极为反光金属电极，所述反光层与所述第二电极采用相同的材料制成。
  7. 根据权利要求2-5中任一项所述的OLED显示基板，其中，所述薄膜晶体管阵列层在所述环绕亚像素区域设置有开口，所述开口中具有部分所述像素界定层。
  8. 根据权利要求4或5所述的OLED显示基板，其中，所述反光层包括 与所述薄膜晶体管阵列层之间成第一角度的第一部分和与所述像素界定层之间成第二角度的第二部分，所述第一角度与所述第二角度不同。
  9. 根据权利要求2-5中任一项所述的OLED显示基板，其中，所述反光层在垂直于其自身延伸方向上的截面为V字形或梯形。
  10. 一种显示装置，包括如权利要求1-9中任一项所述的OLED显示基板。
  11. 一种OLED显示基板的制作方法，包括在衬底基板上依次形成薄膜晶体管阵列层、第一电极、像素界定层、有机发光层和第二电极，所述像素界定层限定出多个亚像素区域，所述方法还包括：
    形成环绕亚像素区域的反光结构，所述反光结构能够反射所述有机发光层发出的位于出射锥外的光线，使至少部分所述光线进入所述出射锥。
  12. 根据权利要求11所述的OLED显示基板的制作方法，其中，形成所述薄膜晶体管阵列层还包括：
    形成在所述环绕亚像素区域具有开口的所述薄膜晶体管阵列层。
  13. 根据权利要求11或12所述的OLED显示基板的制作方法，其中，形成所述反光结构包括：
    形成所述环绕亚像素区域的凹槽结构，并在所述凹槽结构的侧壁上形成反光层。
  14. 根据权利要求13所述的OLED显示基板的制作方法，其中，形成所述反光层包括：
    通过一次工艺形成所述第二电极和所述反光层。
  15. 根据权利要求13所述的OLED显示基板的制作方法，其中，形成所述反光层包括：
    形成与所述薄膜晶体管阵列层之间成第一角度的反光层的第一部分和与所述像素界定层之间成第二角度的反光层的第二部分，所述第一角度与所述第二角度不同。
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